TWI681246B - Heat dissipation device and projector - Google Patents

Heat dissipation device and projector Download PDF

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Publication number
TWI681246B
TWI681246B TW107139173A TW107139173A TWI681246B TW I681246 B TWI681246 B TW I681246B TW 107139173 A TW107139173 A TW 107139173A TW 107139173 A TW107139173 A TW 107139173A TW I681246 B TWI681246 B TW I681246B
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layer
semiconductor
light source
disposed
heat dissipation
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TW107139173A
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TW202018403A (en
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黃家斌
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揚明光學股份有限公司
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Priority to TW107139173A priority Critical patent/TWI681246B/en
Priority to CN201910997235.5A priority patent/CN111142322A/en
Priority to US16/672,498 priority patent/US20200142287A1/en
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Publication of TWI681246B publication Critical patent/TWI681246B/en
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Priority to US18/085,586 priority patent/US20230120403A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/16—Cooling; Preventing overheating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • General Engineering & Computer Science (AREA)
  • Projection Apparatus (AREA)

Abstract

A heat dissipation device including two insulation layers, two metal layers, a semiconductor layer, and a phosphor layer is provided. The semiconductor layer is disposed between the two metal layers. The whole of the semiconductor layer and the two metal layers is disposed between the two insulation layers. The phosphor layer is disposed on one of the insulation layers. A projector is also provided.

Description

散熱裝置與投影機Radiator and projector

本發明是有關於一種光學裝置，且特別是有關於一種散熱裝置與投影機。The invention relates to an optical device, and particularly to a heat dissipation device and a projector.

目前綠光發光二極體（light-emitting diode, LED）的發光效率低下，因此市面上為產生綠光大多是使用例如是藍光或UV光等短波長光源作為激發光照射螢光粉，以讓螢光粉激發出綠光。通常螢光粉的轉換效率與其所接受的激發光密度呈正比，而光密度愈高，溫度則愈高。然而，螢光粉的壽命反比於其工作溫度。現在的做法大多是先把螢光粉層塗佈在一基板上，再將基板連接散熱鰭片，再對散熱鰭片吹風來把熱帶走。但是，受限基板的熱阻值，熱能將無法有效、大量、迅速地被傳導至鰭片上，導致螢光粉層的工作溫度仍然偏高。At present, the luminous efficiency of green light-emitting diodes (LEDs) is low. Therefore, in order to generate green light on the market, most short-wavelength light sources such as blue light or UV light are used as the excitation light to illuminate the phosphor powder, so that The fluorescent powder excites green light. In general, the conversion efficiency of phosphors is proportional to the excitation light density it receives, and the higher the optical density, the higher the temperature. However, the lifetime of phosphor is inversely proportional to its operating temperature. Most of the current practice is to first coat the phosphor layer on a substrate, then connect the substrate to the heat dissipation fins, and then blow the heat dissipation fins to remove the heat. However, due to the limited thermal resistance of the substrate, the thermal energy will not be efficiently, massively and quickly transmitted to the fins, resulting in the working temperature of the phosphor layer being still high.

一種習知的投影機中是利用會轉動的螢光輪與色輪的搭配來產生不同顏色的光束，以使投影機能夠投影出彩色畫面，同時藉由螢光輪的轉動來降低螢光粉層的工作溫度。然而，為了讓螢光輪與色輪轉動而採用的馬達動件會導致系統的可靠度下降，使系統壽命無法有效的提升。In a conventional projector, the combination of a rotating fluorescent wheel and a color wheel is used to generate light beams of different colors, so that the projector can project a color image, and the rotation of the fluorescent wheel reduces the phosphor layer. Operating temperature. However, the motor moving parts used to rotate the fluorescent wheel and the color wheel will cause the reliability of the system to decrease, and the life of the system cannot be effectively improved.

本發明提供一種散熱裝置，其具有較長的使用壽命與較高的散熱效率。The invention provides a heat dissipation device which has a long service life and a high heat dissipation efficiency.

本發明提供一種投影機，其具有較高的可靠度與較長的使用壽命。The invention provides a projector with high reliability and long service life.

本發明的一實施例提出一種散熱裝置，包括兩個絕緣層、兩個金屬層、一半導體層及一螢光粉層。半導體層配置於此兩個金屬層之間，且半導體層與此兩個金屬層的整體配置於此兩個絕緣層之間。螢光粉層配置於其中一個絕緣層上。An embodiment of the present invention provides a heat dissipation device, including two insulating layers, two metal layers, a semiconductor layer, and a phosphor layer. The semiconductor layer is disposed between the two metal layers, and the entirety of the semiconductor layer and the two metal layers is disposed between the two insulating layers. The phosphor layer is arranged on one of the insulating layers.

本發明的一實施例提出一種散熱裝置，包括一致冷晶片與一螢光粉層。致冷晶片設有一陶瓷表面，而螢光粉層燒結於陶瓷表面。An embodiment of the invention provides a heat dissipation device, including a uniform cold chip and a phosphor layer. The cooling chip is provided with a ceramic surface, and the phosphor layer is sintered on the ceramic surface.

本發明的一實施例提出一種投影機，包括一光機、一光閥及一鏡頭。光機包括一準直光源、一透鏡、一絕緣基板及一致冷晶片。透鏡設於準直光源的光路下游，絕緣基板設於透鏡的光路下游，且絕緣基板的一側設有一螢光粉層。致冷晶片設於絕緣基板的另一側。光閥設於光機的光路下游，而鏡頭設於光閥的光路下游。An embodiment of the invention provides a projector including an optical machine, a light valve, and a lens. The optical machine includes a collimated light source, a lens, an insulating substrate and a uniform cold wafer. The lens is arranged downstream of the optical path of the collimated light source, the insulating substrate is arranged downstream of the optical path of the lens, and a phosphor powder layer is provided on one side of the insulating substrate. The cooling wafer is provided on the other side of the insulating substrate. The light valve is located downstream of the light path of the optical machine, and the lens is located downstream of the light path of the light valve.

在本發明的實施例的散熱裝置與投影機中，由於採用致冷晶片或半導體熱電冷卻（thermoelectric cooling, TEC）技術來幫助螢光粉層的散熱，因此散熱裝置可具有較長的使用壽命與較高的散熱效率，且投影機可具有較高的可靠度與較長的使用壽命。In the heat dissipation device and projector of the embodiment of the present invention, since the cooling chip or semiconductor thermoelectric cooling (TEC) technology is used to help the heat dissipation of the phosphor layer, the heat dissipation device can have a longer service life and Higher heat dissipation efficiency, and the projector can have higher reliability and longer service life.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

圖1為本發明的一實施例的投影機的光路示意圖。舉例來說，在本發明的一實施例的投影機中的螢光粉層的散熱架構中，採用了致冷晶片來幫助螢光粉層的散熱，因而可以達到良好的散熱效果，降低發光粉層的工作溫度，進而增加發光粉層的使用壽命。另外，由於可以選擇性的省略可轉動的螢光輪等動件，所以可以提高投影機的可靠度及使用壽命。以下就本發明的投影機的設計進行說明。FIG. 1 is a schematic diagram of an optical path of a projector according to an embodiment of the invention. For example, in the heat dissipation structure of the phosphor layer in the projector according to an embodiment of the invention, a cooling chip is used to help the heat dissipation of the phosphor layer, so that a good heat dissipation effect can be achieved and the luminescent powder can be reduced The working temperature of the layer increases the service life of the luminescent powder layer. In addition, since the rotating parts such as the rotating fluorescent wheel can be selectively omitted, the reliability and service life of the projector can be improved. The design of the projector of the present invention will be described below.

請參照圖1，本實施例的投影機500包括一光機400、一光閥510及一投影鏡頭520。Please refer to FIG. 1. The projector 500 of this embodiment includes an optical machine 400, a light valve 510 and a projection lens 520.

本實施例的光機400包括光源組100、200及300、透鏡442、444、472、474、452、454、464及476、一散熱裝置600、分光鏡410、分光鏡420、擴散片446、456及466、一光均勻化元件484及一稜鏡486。The optical machine 400 of this embodiment includes light source groups 100, 200, and 300, lenses 442, 444, 472, 474, 452, 454, 464, and 476, a heat dissipation device 600, beam splitter 410, beam splitter 420, diffusion sheet 446, 456 and 466, a light homogenizing element 484 and a 鏜鏡486.

光源組100、200及300可各自為一準直光源，可輸出一準直光線，其可為雷射光源或是經各式光學元件準直的，例如發光二極體或其他傳統光源。亦即，光源組100、200及300本身可包括一非準直光源及至少一例如是準直透鏡的光學元件。於本例中，光源組100、200及300可各自包括一雷射二極體發光模組(laser bank)，分別包括一雷射二極體陣列。再者，於本例中，光源組100、200、300的設計，除其中的發光元件的顏色及功率略有不同外，其結構是大致相同的，惟其不以相同為限。於本例中，光源組100、200、300可分別輸出藍色光束101、藍色光束201及紅色光束301。在應用時，光源組100、200、300的功率分別在20、50、100瓦特以上、300瓦特以下時，其效率及散熱效果較能取得平衡。The light source groups 100, 200 and 300 can each be a collimated light source, which can output a collimated light, which can be a laser light source or collimated by various optical elements, such as a light emitting diode or other conventional light sources. That is, the light source groups 100, 200, and 300 may include a non-collimated light source and at least one optical element such as a collimated lens. In this example, the light source groups 100, 200, and 300 may each include a laser diode light-emitting module (laser bank), each including a laser diode array. Furthermore, in this example, the design of the light source group 100, 200, 300, except that the color and power of the light-emitting elements are slightly different, the structure is approximately the same, but it is not limited to the same. In this example, the light source groups 100, 200, and 300 can output a blue light beam 101, a blue light beam 201, and a red light beam 301, respectively. In application, when the power of the light source groups 100, 200, and 300 are respectively above 20, 50, 100 watts, and below 300 watts, their efficiency and heat dissipation effect can be more balanced.

圖2為圖1中的散熱裝置的剖面示意圖。散熱裝置600可為一固定式的波長轉換元件，其並非如色輪或是螢光輪等可轉動的裝置。於本例中，散熱裝置600包括一致冷晶片610、一螢光粉層620、一絕緣基板630、一熱沈（heat sink）640及一直流電源650。致冷晶片610例如為一熱電冷卻器（thermoelectric cooler, TEC），其包括絕緣層611及615、金屬層612及614及一半導體層613。絕緣層611及615例如為陶瓷基板。半導體層613包括多對半導體接腳，每一半導體接腳包括一P型半導體接腳613p與一N型半導體接腳613n。絕緣基板630例如為一固定式的陶瓷基板，且不是旋轉盤或移動式基板。此外，螢光粉層620可以包括各色螢光粉，如吸收較短波長的藍光或UV光後，可激發出較長波長的紅、綠色光束的螢光粉，於本例中，螢光粉層620是可受藍光激發以輸出綠光的綠色螢光粉層。螢光粉層620的厚度T可以是小於1毫米，例如是小於0.1毫米，或是小於0.3毫米，或是小於0.5毫米。螢光粉層620可以僅以陶瓷螢光粉燒結而成，又或者與樹脂等載體混合後定型亦可，本發明不以此為限。於本例中，螢光粉層620為一直接燒結於絕緣基板630表面的陶瓷螢光粉層。直流電源650可對半導體接腳供電。此外，熱沈640例如為散熱鰭片。2 is a schematic cross-sectional view of the heat dissipation device in FIG. 1. The heat dissipation device 600 may be a fixed wavelength conversion element, which is not a rotatable device such as a color wheel or a fluorescent wheel. In this example, the heat dissipation device 600 includes a uniform cooling chip 610, a phosphor layer 620, an insulating substrate 630, a heat sink 640, and a DC power supply 650. The cooling chip 610 is, for example, a thermoelectric cooler (TEC), which includes insulating layers 611 and 615, metal layers 612 and 614, and a semiconductor layer 613. The insulating layers 611 and 615 are, for example, ceramic substrates. The semiconductor layer 613 includes a plurality of pairs of semiconductor pins, and each semiconductor pin includes a P-type semiconductor pin 613p and an N-type semiconductor pin 613n. The insulating substrate 630 is, for example, a fixed ceramic substrate, and is not a rotating disk or a mobile substrate. In addition, the phosphor layer 620 may include phosphors of various colors, such as phosphors that absorb shorter-wavelength blue light or UV light and excite longer-wavelength red and green light beams. In this example, phosphors Layer 620 is a layer of green phosphor that can be excited by blue light to output green light. The thickness T of the phosphor layer 620 may be less than 1 mm, for example, less than 0.1 mm, or less than 0.3 mm, or less than 0.5 mm. The phosphor powder layer 620 may be formed by sintering only ceramic phosphor powder, or may be mixed with a carrier such as resin and shaped, and the invention is not limited thereto. In this example, the phosphor layer 620 is a ceramic phosphor layer sintered directly on the surface of the insulating substrate 630. The DC power supply 650 can supply power to the semiconductor pins. In addition, the heat sink 640 is, for example, a heat sink fin.

分光鏡410與分光鏡420可以是分色鏡（dichroic mirror）或是例如是X型合光片、合光稜鏡組、極性濾光片(polarizing beam splitter, PBS)等元件。在本實施例中，分光鏡410與分光鏡420為二相互實質平行的分色鏡（dichroic mirror），其可反射特定波長範圍的光，且讓其他波長範圍的光通過。舉例而言，分光鏡410可反射藍光，且讓綠光通過，而分光鏡420可反射紅光，且讓藍光與綠光通過。The dichroic mirror 410 and the dichroic mirror 420 may be dichroic mirrors or elements such as an X-type light combiner, a light combiner group, a polarizing beam splitter (PBS), or the like. In this embodiment, the dichroic mirror 410 and the dichroic mirror 420 are two substantially parallel dichroic mirrors, which can reflect light in a specific wavelength range and pass light in other wavelength ranges. For example, the beam splitter 410 can reflect blue light and pass green light, and the beam splitter 420 can reflect red light and pass blue light and green light.

擴散片(diffuser)446、456與466為一廣為應用的光學元件，其可為具有擴散粒子或擴散微結構的光學膜片或元件，可用於增加各光束的發散角度，用以降低雷射光的散斑（speckle）現象。需知悉的是，擴散片(diffuser)446、456與466並非以片狀為限。再者，擴散片可擴大各入射光束的擴散角度，讓光束的光斑可以均勻地照在螢光粉層上。Diffusers 446, 456 and 466 are widely used optical components, which can be optical films or components with diffused particles or diffused microstructures, which can be used to increase the divergence angle of each beam to reduce laser light Speckle phenomenon. It should be noted that diffusers 446, 456 and 466 are not limited to flakes. Furthermore, the diffusion sheet can expand the diffusion angle of each incident beam, so that the beam spot can evenly illuminate the phosphor layer.

在本實施例中，光均勻化元件484可以是光積分柱（light integration rod）、透鏡陣列、複眼透鏡(Fly-eye)等可使光線均勻化的光學元件。於本例中，光均勻化元件484為一複眼透鏡。In this embodiment, the light homogenizing element 484 may be an optical element such as a light integration rod, a lens array, a fly-eye lens (Fly-eye), etc., which can make the light uniform. In this example, the light homogenizing element 484 is a compound eye lens.

而光學元件486可以是場鏡、稜鏡、反射鏡等元件，於本例中，光學元件486為一內部全反射稜鏡（total internal reflection prism, TIR prism），惟按設計，亦可以單一反向內部全反射稜鏡(RTIR)予以取代亦可。The optical element 486 can be a field lens, a mirror, a mirror, etc. In this example, the optical element 486 is a total internal reflection prism (total internal reflection prism, TIR prism). It can also be replaced by Total Internal Reflection (RTIR).

光閥510為一廣為應用的元件，為空間光調變器(SLM)的一種，可用於將一照明光束轉換為一影像光束。光閥510可以是數位微鏡元件（digital micro-mirror device, DMD）、矽基液晶面板（liquid-crystal-on-silicon panel, LCOS panel）或是液晶面板(LCD Panel)等元件，於本例中，光閥510為一數位微鏡元件(DMD)。The light valve 510 is a widely used element, a type of spatial light modulator (SLM), which can be used to convert an illumination beam into an image beam. The light valve 510 may be a digital micro-mirror device (DMD), liquid crystal-on-silicon panel (LCOS panel) or liquid crystal panel (LCD Panel), etc. In this example In this case, the light valve 510 is a digital micromirror device (DMD).

投影鏡頭520例如為可包括至少一透鏡且用以成像的鏡頭。於本例中，投影鏡頭520依序包括一前透鏡群、一光圈以及一後透鏡群，前透鏡群及該後透鏡群分別包括兩枚以上具屈光度的透鏡，而於本例中，投影鏡頭520中具屈光度的透鏡數量不多於15枚。The projection lens 520 is, for example, a lens that can include at least one lens and is used for imaging. In this example, the projection lens 520 includes a front lens group, an aperture, and a rear lens group in sequence, the front lens group and the rear lens group include two or more diopter lenses, and in this example, the projection lens There are no more than 15 diopter lenses in 520.

以下就各元件的相對位置及運作方式進行說明。The relative position and operation mode of each component will be described below.

在散熱裝置600的致冷晶片610中，金屬層612設於絕緣層611上，半導體層613設於金屬層612上，金屬層614設於半導體層613上，且絕緣層615設於金屬層614上。此外，螢光粉層620熱耦接於絕緣層615。在本實施例中，螢光粉層620設於絕緣基板630的一側，而致冷晶片610設於絕緣基板630的另一側。也就是說，螢光粉層620藉由絕緣基板630熱耦接於絕緣層615，即螢光粉層620經由絕緣基板630配置於絕緣層615上。螢光粉層620可以塗佈於或燒結於絕緣基板630上。然而，在另一實施例的散熱裝置600a中，如圖3所繪示，致冷晶片610設有一陶瓷表面616，即絕緣層615的表面，而螢光粉層620燒結、熱固化或塗佈於陶瓷表面616。也就是說，螢光粉層620直接配置於絕緣層615上，且直接熱耦接於絕緣層615。In the cooling wafer 610 of the heat sink 600, the metal layer 612 is provided on the insulating layer 611, the semiconductor layer 613 is provided on the metal layer 612, the metal layer 614 is provided on the semiconductor layer 613, and the insulating layer 615 is provided on the metal layer 614 on. In addition, the phosphor layer 620 is thermally coupled to the insulating layer 615. In this embodiment, the phosphor layer 620 is provided on one side of the insulating substrate 630, and the cooling wafer 610 is provided on the other side of the insulating substrate 630. In other words, the phosphor layer 620 is thermally coupled to the insulating layer 615 via the insulating substrate 630, that is, the phosphor layer 620 is disposed on the insulating layer 615 via the insulating substrate 630. The phosphor layer 620 may be coated or sintered on the insulating substrate 630. However, in the heat dissipation device 600a of another embodiment, as shown in FIG. 3, the cooling chip 610 is provided with a ceramic surface 616, that is, the surface of the insulating layer 615, and the phosphor layer 620 is sintered, thermally cured, or coated于陶瓷面616. In other words, the phosphor layer 620 is directly disposed on the insulating layer 615, and is directly thermally coupled to the insulating layer 615.

此外，致冷晶片610配置於熱沈640上，且位於螢光粉層620與熱沈640之間。在本實施例中，這些半導體接腳藉由金屬層612與金屬層614彼此電性連接。在本例中，直流電源650所提供的電流經由金屬層612與金屬層614流經這些半導體接腳，以使致冷晶片610的上側（即絕緣層615這一側）形成冷端（cold side），而致冷晶片610的下側（即絕緣層611這一側）形成熱端（hot side）。也就是說，螢光粉層620配置於致冷晶片610的冷端，而熱沈640配置於致冷晶片610的熱端。如此一來，藉由致冷晶片610的設置，可使螢光粉層620的熱能快速地傳導至熱沈640，進而從熱沈640散逸至環境中。In addition, the cooling chip 610 is disposed on the heat sink 640 and is located between the phosphor layer 620 and the heat sink 640. In this embodiment, the semiconductor pins are electrically connected to each other through the metal layer 612 and the metal layer 614. In this example, the current provided by the DC power supply 650 flows through these semiconductor pins through the metal layer 612 and the metal layer 614, so that the upper side of the cooling wafer 610 (ie, the insulating layer 615 side) forms a cold side (cold side) ), and the lower side of the cooling wafer 610 (ie, the insulating layer 611 side) forms a hot side. That is, the phosphor layer 620 is disposed at the cold end of the cooling wafer 610, and the heat sink 640 is disposed at the hot end of the cooling wafer 610. In this way, by the arrangement of the cooling chip 610, the heat energy of the phosphor layer 620 can be quickly conducted to the heat sink 640, and then dissipated from the heat sink 640 to the environment.

分光鏡410設於光源組100、光源組200以及散熱裝置600的光路下游，且分光鏡420設於光源300的光路下游，且設於分光鏡410的光路下游。The dichroic mirror 410 is disposed downstream of the light path of the light source group 100, the light source group 200, and the heat sink 600, and the dichroic mirror 420 is disposed downstream of the light path of the light source 300 and downstream of the dichroic mirror 410.

在本實施例中，光源組100所發出的呈藍色的光束101在傳遞至分光鏡410時，被分光鏡410反射至螢光粉層620，而激發出呈綠色的光束433。綠色光束433傳遞回分光鏡410後，穿透了分光鏡410。In this embodiment, when the blue light beam 101 emitted by the light source group 100 is transmitted to the beam splitter 410, it is reflected by the beam splitter 410 to the phosphor layer 620, and a green light beam 433 is excited. After the green light beam 433 passes back to the beam splitter 410, it passes through the beam splitter 410.

在本實施例中，分光鏡410將雷射光源組200發出的呈藍色的光束201反射至分光鏡420，並使來自螢光粉層620的呈綠色的光束433通過而傳遞至分光鏡420。分光鏡420反射光源300發出的呈紅色的光束301，並使光源組200發出的且經分光鏡410反射的光束201與來自螢光粉層620的光束433通過。如此一來，呈紅色的光束301、呈綠色的光束433及呈藍色的光束201便能夠被分光鏡420合併為一照明光束401。In this embodiment, the beam splitter 410 reflects the blue light beam 201 emitted by the laser light source group 200 to the beam splitter 420, and passes the green light beam 433 from the phosphor layer 620 to the beam splitter 420. . The beam splitter 420 reflects the red beam 301 emitted by the light source 300, and passes the beam 201 emitted by the light source group 200 and reflected by the beam splitter 410 and the beam 433 from the phosphor layer 620. In this way, the red light beam 301, the green light beam 433 and the blue light beam 201 can be combined by the dichroic mirror 420 into an illumination light beam 401.

來自分光鏡420的照明光束401經由光均勻化元件484的均勻化與整形的作用後，經由稜鏡486照射於光閥510上。光閥510將照明光束401調制成影像光束512，而影像光束512經由稜鏡486而傳遞至投影鏡頭520。投影鏡頭520將影像光束512投影於成像面（成像面處例如設置有一屏幕）上，以形成影像畫面。在本實施例中，光源組100、200與300可以同時或是輪流發光，以使照明光束401輪流或同時呈現紅色、綠色、藍色或其組合而成的顏色，如白色，即為一例，以在不需要如色輪或螢光輪等動件的情況下形成彩色畫面。如此一來，本實施例的投影機500可以避免在光源端因使用動件而造成的可靠度下降的問題，且可以沒有色輪中不同顏色的區域之間的間隙造成光能量的損失的問題。The illuminating light beam 401 from the beam splitter 420 is irradiated onto the light valve 510 via the light beam 486 after being homogenized and shaped by the light homogenizing element 484. The light valve 510 modulates the illumination light beam 401 into an image light beam 512, and the image light beam 512 is transmitted to the projection lens 520 through the red light 486. The projection lens 520 projects the image beam 512 on the imaging surface (for example, a screen is provided at the imaging surface) to form an image frame. In this embodiment, the light source groups 100, 200, and 300 can emit light at the same time or in turns, so that the illumination light beam 401 alternately or simultaneously exhibits colors of red, green, blue, or a combination thereof, such as white, for example. In order to form a color picture without moving parts such as color wheel or fluorescent wheel. In this way, the projector 500 of this embodiment can avoid the problem of reduced reliability caused by the use of moving parts at the light source end, and can eliminate the problem of loss of light energy caused by the gap between the regions of different colors in the color wheel .

此外，雖然未使用可旋轉的螢光輪等動件容易使熱能集中於固定的位置，但本發明的實施例藉由致冷晶片610將熱能快速地傳導至熱沈640，以有效降低螢光粉層620上的熱能累積。如此一來，螢光粉層620便能夠具有比較低的工作溫度，進而延長了螢光粉層620的使用壽命。因此，本發明的實施例的散熱裝置600及投影機500具有較長的使用壽命與較高的散熱效率。In addition, although it is easy to concentrate the heat energy at a fixed position without using a rotatable fluorescent wheel or other moving parts, the embodiment of the present invention rapidly transfers the heat energy to the heat sink 640 through the cooling chip 610 to effectively reduce the phosphor powder The thermal energy on layer 620 accumulates. In this way, the phosphor layer 620 can have a relatively low operating temperature, thereby extending the life of the phosphor layer 620. Therefore, the heat dissipation device 600 and the projector 500 of the embodiment of the present invention have a longer service life and higher heat dissipation efficiency.

具體而言，在圖2的實施例中，是將螢光粉層620先形成在絕緣基板630（例如耐熱陶瓷基板）上，再將絕緣基板630設於致冷晶片610的冷端。致冷晶片610可有效地把絕緣基板630的一側的溫度降低至低於室溫，進而有效提高絕緣基板630的熱傳導效率。另一方面，於本例中，螢光粉層620與陶瓷基板630之間未設有例如是發光二極體等發光元件，又或者，可理解為螢光粉層620中的任一部份中均未包覆有已與電源耦接，且在接收訊號後可將電能轉換為光能的發光元件。Specifically, in the embodiment of FIG. 2, the phosphor layer 620 is first formed on an insulating substrate 630 (for example, a heat-resistant ceramic substrate), and then the insulating substrate 630 is provided on the cold end of the cooling wafer 610. The cooling wafer 610 can effectively reduce the temperature on one side of the insulating substrate 630 to below room temperature, thereby effectively improving the heat conduction efficiency of the insulating substrate 630. On the other hand, in this example, there is no light emitting element such as a light emitting diode between the phosphor layer 620 and the ceramic substrate 630, or alternatively, it can be understood as any part of the phosphor layer 620 None of them are covered with a light-emitting element that is coupled to the power source and can convert electrical energy into light energy after receiving the signal.

而在圖3的實施例中，螢光粉層620是直接以燒結、熱固化或是其他已知的方式形成並固定於致冷晶片610的表面，省略了絕緣基板630的熱阻，而致冷晶片610可有效的把螢光粉層620的熱能傳導至熱沈640。In the embodiment of FIG. 3, the phosphor layer 620 is directly formed and fixed on the surface of the cooling wafer 610 by sintering, thermal curing, or other known methods, omitting the thermal resistance of the insulating substrate 630, resulting in The cold wafer 610 can effectively conduct the heat energy of the phosphor layer 620 to the heat sink 640.

在一實例中，為了使螢光粉層620所發出的光束433具有足夠的強度，照射於光束101照射於螢光粉層620上的功率可達20、50或100瓦特以上，1000瓦特以下。而於本例中，由於電光轉換效率的問題，照射於螢光粉層620上的光功率會小於光源100所消耗的功率。另一方面，通常照射於螢光粉層620上的功率在大於40瓦時，考量熱阻，即使應用風扇對熱沈來散熱，其仍無法有效緩解螢光粉層的溫度。然而，在圖2與圖3的實施例中，由於使用了致冷晶片610，熱阻可被最小化前述無法有效散熱的問題即可被解決，如此可有效提升投影機500的可靠度與使用壽命。再者，熱沉相對於熱源的另一側可選擇性的設置有風扇，以進一步提高其散熱效果。In one example, in order to make the light beam 433 emitted by the phosphor layer 620 have sufficient intensity, the power irradiated on the phosphor layer 620 by the light beam 101 can reach 20, 50 or 100 watts or more and less than 1000 watts. In this example, due to the problem of electro-optical conversion efficiency, the optical power irradiated on the phosphor layer 620 will be less than the power consumed by the light source 100. On the other hand, usually the power irradiated on the phosphor layer 620 is greater than 40 watt-hours, considering the thermal resistance, even if a fan is used to dissipate heat from the heat sink, it still cannot effectively relieve the temperature of the phosphor layer. However, in the embodiments of FIGS. 2 and 3, since the cooling chip 610 is used, the thermal resistance can be minimized and the aforementioned problem of ineffective heat dissipation can be solved, which can effectively improve the reliability and use of the projector 500 life. Furthermore, the heat sink can be optionally provided with a fan relative to the other side of the heat source to further improve its heat dissipation effect.

在本實施例中，擴散片446設於光源組100及分光鏡410之間的光學路徑上，擴散片456設於光源組200及分光鏡410之間的光學路徑上，而擴散片466設於光源300及分光鏡420的光學路徑上。擴散片446、456、466可使光束101、201、301較為均勻，以改善雷射光束所產生的散斑現象。In this embodiment, the diffusion sheet 446 is disposed on the optical path between the light source group 100 and the dichroic mirror 410, the diffusion sheet 456 is disposed on the optical path between the light source group 200 and the dichroic mirror 410, and the diffusion sheet 466 is disposed on The optical path of the light source 300 and the dichroic mirror 420. The diffusion sheets 446, 456, and 466 can make the beams 101, 201, and 301 more uniform to improve the speckle phenomenon caused by the laser beam.

在本實施例中，透鏡442與444依序配置於光源組100與擴散片446之間的光學路徑上，也就是設於光源組100的光路下游，而絕緣基板630設於透鏡422與444的光路下游。透鏡472與474配置於波長轉換元件430與分光鏡410之間的光學路徑上，透鏡452與454依序配置於光源組200與擴散片456之間的光學路徑上，透鏡462與464依序配置於光源300與擴散片466之間的光學路徑上，且透鏡476配置於分光鏡420與光均勻化元件484之間的光學路徑上。這些透鏡可提供聚光或改變光束錐角的功能。In this embodiment, the lenses 442 and 444 are sequentially arranged on the optical path between the light source group 100 and the diffusion sheet 446, that is, the optical path provided downstream of the light source group 100, and the insulating substrate 630 is provided on the lenses 422 and 444. Downstream of the light path. The lenses 472 and 474 are arranged on the optical path between the wavelength conversion element 430 and the beam splitter 410, the lenses 452 and 454 are arranged on the optical path between the light source group 200 and the diffusion sheet 456 in sequence, and the lenses 462 and 464 are arranged in sequence On the optical path between the light source 300 and the diffusion sheet 466, the lens 476 is disposed on the optical path between the beam splitter 420 and the light homogenizing element 484. These lenses can provide the function of condensing light or changing the beam cone angle.

在本實施例的致冷晶片610中，絕緣層611與絕緣層615例如為第一絕緣層與第二絕緣層，而金屬層612與金屬層614例如為第一金屬層與第二金屬層。In the cooling wafer 610 of this embodiment, the insulating layer 611 and the insulating layer 615 are, for example, first and second insulating layers, and the metal layer 612 and the metal layer 614 are, for example, first and second metal layers.

綜上所述，在本發明的實施例的散熱裝置與投影機中，由於採用致冷晶片或半導體熱電冷卻（thermoelectric cooling, TEC）技術來幫助螢光粉層的散熱，因此散熱裝置可具有較長的使用壽命與較高的散熱效率，且投影機可具有較高的可靠度與較長的使用壽命。In summary, in the heat dissipation device and the projector of the embodiment of the present invention, since the cooling chip or semiconductor thermoelectric cooling (TEC) technology is used to help the heat dissipation of the phosphor layer, the heat dissipation device can have Long service life and high heat dissipation efficiency, and the projector can have higher reliability and longer service life.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100、200、300‧‧‧光源組100, 200, 300 ‧‧‧ light source group

101、201、301、433‧‧‧光束101, 201, 301, 433‧‧‧ beam

400‧‧‧光機400‧‧‧Optical

401‧‧‧照明光束401‧‧‧Illumination beam

410、420‧‧‧分光鏡410,420‧‧‧Spectroscope

442、444、452、454、462、464、472、474、476‧‧‧透鏡442, 444, 452, 454, 462, 464, 472, 474, 476‧‧‧ lens

446、456、466‧‧‧擴散片446, 456, 466‧‧‧Diffusion film

484‧‧‧光均勻化元件484‧‧‧Light homogenizing element

486‧‧‧光學元件486‧‧‧Optical components

500‧‧‧投影機500‧‧‧Projector

510‧‧‧光閥510‧‧‧Light valve

512‧‧‧影像光束512‧‧‧Image beam

520‧‧‧投影鏡頭520‧‧‧Projection lens

600、600a‧‧‧散熱裝置600, 600a‧‧‧radiating device

610‧‧‧致冷晶片610‧‧‧Refrigeration chip

611、615‧‧‧絕緣層611、615‧‧‧Insulation

612、614‧‧‧金屬層612、614‧‧‧Metal layer

613‧‧‧半導體層613‧‧‧Semiconductor layer

613n‧‧‧N型半導體接腳613n‧‧‧N-type semiconductor pin

613p‧‧‧P型半導體接腳613p‧‧‧P type semiconductor pin

616‧‧‧陶瓷表面616‧‧‧Ceramic surface

620‧‧‧螢光粉層620‧‧‧ phosphor powder layer

630‧‧‧絕緣基板630‧‧‧Insulation substrate

640‧‧‧熱沈640‧‧‧ heat sink

650‧‧‧直流電源650‧‧‧DC power supply

T‧‧‧厚度T‧‧‧thickness

圖1為本發明的一實施例的投影機的光路示意圖。 圖2為圖1中的散熱裝置的剖面示意圖。 圖3為本發明的另一實施例的散熱裝置的剖面示意圖。FIG. 1 is a schematic diagram of an optical path of a projector according to an embodiment of the invention. 2 is a schematic cross-sectional view of the heat dissipation device in FIG. 1. 3 is a schematic cross-sectional view of a heat dissipation device according to another embodiment of the invention.

600‧‧‧散熱裝置 600‧‧‧radiating device

610‧‧‧致冷晶片 610‧‧‧Refrigeration chip

611、615‧‧‧絕緣層 611、615‧‧‧Insulation

612、614‧‧‧金屬層 612、614‧‧‧Metal layer

613‧‧‧半導體層 613‧‧‧Semiconductor layer

613n‧‧‧N型半導體接腳 613n‧‧‧N-type semiconductor pin

613p‧‧‧P型半導體接腳 613p‧‧‧P type semiconductor pin

620‧‧‧螢光粉層 620‧‧‧ phosphor powder layer

630‧‧‧絕緣基板 630‧‧‧Insulation substrate

640‧‧‧熱沈 640‧‧‧ heat sink

650‧‧‧直流電源 650‧‧‧DC power supply

T‧‧‧厚度 T‧‧‧thickness

Claims (9)

一種散熱裝置，包括：一致冷晶片，包括：一第一絕緣層；一第一金屬層，設於該第一絕緣層上；一半導體層，設於該第一金屬層上；一第二金屬層，設於該半導體層上；以及一第二絕緣層，設於該第二金屬層上，其中該半導體層包括多對半導體接腳，每一半導體接腳包括一P型半導體接腳與一N型半導體接腳，該多對半導體接腳藉由該第一金屬層與該第二金屬層彼此電性連接；以及一螢光粉層，熱耦接於該第二絕緣層。 A heat dissipation device, including: a uniform cold chip, including: a first insulating layer; a first metal layer disposed on the first insulating layer; a semiconductor layer disposed on the first metal layer; and a second metal A layer disposed on the semiconductor layer; and a second insulating layer disposed on the second metal layer, wherein the semiconductor layer includes a plurality of pairs of semiconductor pins, and each semiconductor pin includes a P-type semiconductor pin and a N-type semiconductor pins, the pairs of semiconductor pins are electrically connected to each other through the first metal layer and the second metal layer; and a phosphor layer is thermally coupled to the second insulating layer. 一種散熱裝置，包括：一致冷晶片，包括：一第一絕緣層；一第一金屬層，設於該第一絕緣層上；一半導體層，設於該第一金屬層上；一第二金屬層，設於該半導體層上；以及一第二絕緣層，設於該第二金屬層上，且該第二絕緣層設有一陶瓷表面，其中該半導體層包括多對半導體接腳，每一半導體接腳包括一P型半導體接腳與一N型半導體接腳，該多對半導體接腳藉由該第一金屬層與該第二金屬層彼此電 性連接；以及一螢光粉層，燒結於該陶瓷表面。 A heat dissipation device, including: a uniform cold chip, including: a first insulating layer; a first metal layer disposed on the first insulating layer; a semiconductor layer disposed on the first metal layer; and a second metal Layer on the semiconductor layer; and a second insulating layer on the second metal layer, and the second insulating layer is provided with a ceramic surface, wherein the semiconductor layer includes a plurality of pairs of semiconductor pins, each semiconductor The pin includes a P-type semiconductor pin and an N-type semiconductor pin, and the pairs of semiconductor pins are electrically connected to each other through the first metal layer and the second metal layer Sexual connection; and a phosphor layer, sintered on the ceramic surface. 如申請專利範圍第1項或第2項所述的散熱裝置之任一者，其中該螢光粉層直接配置於該致冷晶片之表面。 As in any of the heat dissipation devices described in item 1 or item 2 of the patent application, wherein the phosphor layer is directly disposed on the surface of the cooling chip. 如申請專利範圍第1項或第2項所述的散熱裝置之任一者，進一步包括一陶瓷基板，其中該螢光粉層經由該陶瓷基板配置於該致冷晶片之表面，該螢光粉層與該陶瓷基板之間未設有發光元件。 Any one of the heat dissipation devices as described in item 1 or 2 of the patent application scope, further comprising a ceramic substrate, wherein the phosphor layer is disposed on the surface of the cooling chip via the ceramic substrate, the phosphor No light-emitting element is provided between the layer and the ceramic substrate. 如申請專利範圍第4項所述的散熱裝置，更包括一熱沈，其中該致冷晶片配置於該熱沈上，該致冷晶片位於該螢光粉層與該熱沈之間。 The heat dissipation device as described in item 4 of the patent application further includes a heat sink, wherein the cooling chip is disposed on the heat sink, and the cooling chip is located between the phosphor layer and the heat sink. 如申請專利範圍第4項所述的散熱裝置，其中該螢光粉層的厚度小於1毫米。 The heat dissipation device as described in item 4 of the patent application, wherein the thickness of the phosphor layer is less than 1 mm. 一投影機，包括：一光機，包括：一第一準直光源；一透鏡，設於該第一準直光源的光路下游；一絕緣基板，設於該透鏡的光路下游，該絕緣基板的一側設有一螢光粉層；以及一致冷晶片，設於該絕緣基板的另一側；一光閥，設於該光機的光路下游；以及一鏡頭，設於該光閥的光路下游。 A projector including: an optical machine including: a first collimated light source; a lens provided downstream of the optical path of the first collimated light source; an insulating substrate provided downstream of the optical path of the lens One side is provided with a phosphor layer; and a uniform cold chip is provided on the other side of the insulating substrate; a light valve is provided downstream of the optical path of the optical machine; and a lens is provided downstream of the light path of the light valve. 如申請專利範圍第7項所述的投影機，其中該致冷晶片為一熱電冷卻器，且該螢光粉層配置於該熱電冷卻器的冷端，該第一準直光源的功率大於等於50瓦特。 The projector as described in item 7 of the patent application range, wherein the cooling chip is a thermoelectric cooler, and the phosphor layer is disposed at the cold end of the thermoelectric cooler, and the power of the first collimated light source is greater than or equal to 50 watts. 如申請專利範圍第8項所述的投影機，進一步包括第二準直光源及一第三準直光源，分別設於該光閥的光路上游，該第一準直光源、該第二準直光源及該第三準直光源的功率總和介於200瓦特至1000瓦特之間。 The projector as described in item 8 of the patent application scope further includes a second collimated light source and a third collimated light source, which are respectively disposed upstream of the light path of the light valve, the first collimated light source and the second collimated light source The total power of the light source and the third collimated light source is between 200 watts and 1000 watts.
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