TWI680832B - Grinding method of workpiece - Google Patents

Grinding method of workpiece Download PDF

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Publication number
TWI680832B
TWI680832B TW104140326A TW104140326A TWI680832B TW I680832 B TWI680832 B TW I680832B TW 104140326 A TW104140326 A TW 104140326A TW 104140326 A TW104140326 A TW 104140326A TW I680832 B TWI680832 B TW I680832B
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thickness
workpiece
grinding
measuring device
ultrasonic measuring
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TW104140326A
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Chinese (zh)
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TW201632309A (en
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政田孝行
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/003—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving acoustic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

在被加工物的被磨削面不會殘留厚度測量器的接觸端子的刮傷，無關被加工物的種類且即使在被加工物的表面側被貼合保護構件，也可提供將被加工物的厚度一邊測量一邊磨削的被加工物的磨削方法。 No scratches on the contact terminals of the thickness gauge remain on the ground surface of the workpiece, regardless of the type of the workpiece, and even if the protective member is bonded to the surface side of the workpiece, the workpiece can be provided The method of grinding the thickness of the workpiece while grinding.

一種磨削方法，是將在表面被貼合保護構件的被加工物的背面磨削將被加工物薄化至規定的厚度，其特徵為，具備：一邊只藉由第2超音波測量器依據被加工物的表面及背面中的反射波的傳播時間的差測量被加工物的實厚，一邊至規定的厚度為止將被加工物的背面磨削的第1磨削過程；及在該第1磨削過程終了時，藉由從由第1超音波測量器測量的挾盤載置台的上面高度位置及由該第2超音波測量器測量的被加工物的上面高度位置的差所求得的總厚、和從該第2超音波測量器測量的被加工物的實厚的差，算出保護構件的厚度的保護構件厚度算出過程；及該保護構件厚度算出過程實施後，從由該第2超音波測量器測量的被加工物的上面高度位置及由該第1超音波測量器測量的挾盤載置台的上面高度位置的差、和該保護構件的厚度，將磨削中的被加工物的厚度算出，將被加工物磨削至目標精加工厚度為止的第2磨削過程。 A grinding method is to grind the back surface of the workpiece to which the protective member is bonded to the surface to reduce the thickness of the workpiece to a predetermined thickness, and is characterized by having: one side is only based on the second ultrasonic measuring device The first grinding process in which the difference in the propagation time of the reflected wave between the surface and the back surface of the workpiece measures the solid thickness of the workpiece, while grinding the back surface of the workpiece to a predetermined thickness; and At the end of the grinding process, it is obtained from the difference between the upper height position of the clamping table measured by the first ultrasonic measuring device and the upper height position of the workpiece measured by the second ultrasonic measuring device The difference between the total thickness and the actual thickness of the workpiece measured by the second ultrasonic measuring device to calculate the thickness of the protective member; and after the protective member thickness calculation process is implemented, from the second The difference between the upper height position of the workpiece measured by the ultrasonic measuring device and the upper height position of the pinch table measured by the first ultrasonic measuring device, and the thickness of the protective member will grind the processed object The thickness is calculated, and the second grinding process is to grind the workpiece to the target finishing thickness.

Description

被加工物的磨削方法 Grinding method of workpiece

本發明，是有關於晶圓等的板狀被加工物的磨削方法。 The present invention relates to a method of grinding a plate-shaped workpiece such as a wafer.

在表面形成複數IC、LSI等的元件的矽晶圓(以下只稱為晶圓)，是背面被磨削並被薄化至規定的厚度之後，藉由切削裝置被分割成各元件晶片，被分割的元件晶片是被廣泛利用在行動電話、個人電腦等的各種電子機器。 A silicon wafer (hereinafter referred to simply as a wafer) in which a plurality of devices such as ICs and LSIs are formed on the surface is ground on the back side and thinned to a predetermined thickness, and then is divided into each device wafer by a cutting device. The divided device chip is widely used in various electronic devices such as mobile phones and personal computers.

在將晶圓的背面磨削中，將由磨削裝置的挾盤載置台保持的晶圓旋轉，並且一邊將磨削砥石旋轉一邊與晶圓的被磨削面(背面)接觸，將晶圓的厚度一邊測量一邊磨削。 In grinding the back surface of the wafer, the wafer held by the chucking table of the grinding device is rotated, and while the grinding whetstone is rotated, the wafer is brought into contact with the ground surface (back surface) of the wafer to remove the wafer The thickness is measured while grinding.

此時的厚度的測量方法，一般是一邊將接觸端子與旋轉的晶圓的被磨削面及挾盤載置台的框體的上面(基準面)接觸一邊測量厚度，由到達規定的厚度的時點終了加工的方法(例如日本特開昭63-256360號公報、日本特開2000-006018號公報、日本特開2001-009716號公報 參照)。 The method of measuring the thickness at this time is generally to measure the thickness while contacting the contact terminal with the ground surface of the rotating wafer and the upper surface (reference surface) of the frame of the chuck mounting table, when the predetermined thickness is reached Final processing method (for example, Japanese Patent Laid-Open No. 63-256360, Japanese Patent Laid-Open No. 2000-006018, Japanese Patent Laid-Open No. 2001-009716 Reference).

[習知技術文獻] [Conventional Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開昭63-256360號公報 [Patent Document 1] Japanese Unexamined Patent Publication No. 63-256360

[專利文獻2]日本特開2000-006018號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2000-006018

[專利文獻3]日本特開2001-009716號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2001-009716

但是在一邊將接觸端子接觸一邊將厚度測量的測量方法中，因為將厚度測量器的接觸端子一邊與晶圓的被磨削面接觸一邊將厚度測量，所以在晶圓的被磨削面具有接觸端子接觸的刮傷殘留的問題。 However, in the measurement method of measuring the thickness while contacting the contact terminals, the thickness is measured while the contact terminals of the thickness gauge are in contact with the ground surface of the wafer, so there is contact on the ground surface of the wafer The problem of scratches on terminal contact.

且在接觸測量方法中，因為一邊將包含被貼合在晶圓的厚度及晶圓的表面側的保護構件的總厚由厚度測量器測量，一邊實施磨削加工，所以在保護構件的厚度具有參差不一的情況，該參差不一也會顯現在所測量的厚度，具有無法高精度測量厚度的問題。 In the contact measurement method, the thickness of the protective member is measured while measuring the total thickness of the protective member attached to the wafer and the surface of the wafer by the thickness measuring device. In the case of unevenness, the unevenness will also appear in the measured thickness, with the problem that the thickness cannot be measured with high accuracy.

在此，使用雷射光束一邊測量磨削中的晶圓的厚度一邊將晶圓薄化至規定的厚度的磨削方法也被提案一些。在此方法中，雖由晶圓的上面反射的反射波及由晶圓的下面反射的反射波的到達時間差測量晶圓的厚度，但是依據被加工物的種類具有特定波長的雷射光束無法透過 晶圓的問題，依據被加工物的種類具有無法適用使用雷射光束的厚度測量方法的情況。 Here, a grinding method for thinning a wafer to a predetermined thickness using a laser beam while measuring the thickness of the wafer during grinding has also been proposed. In this method, although the arrival time difference of the reflected wave reflected by the upper surface of the wafer and the reflected wave reflected by the lower surface of the wafer measures the thickness of the wafer, laser beams with specific wavelengths cannot pass through depending on the type of object to be processed The wafer problem may not be applicable to the thickness measurement method using a laser beam depending on the type of workpiece.

本發明是有鑑於此點，其目的是在被加工物的被磨削面不殘留厚度測量器的接觸端子的刮傷，無關被加工物的種類且即使在被加工物的表面側被貼合保護構件，也可提供將被加工物的厚度一邊測量一邊磨削的被加工物的磨削方法。 The present invention is based on this point, and its purpose is not to leave scratches on the contact surface of the thickness gauge on the ground surface of the workpiece, regardless of the type of the workpiece and to be bonded even on the surface side of the workpiece The protective member may also provide a grinding method of the workpiece to be ground while measuring the thickness of the workpiece.

依據本發明的話，可提供一種被加工物的磨削方法，是使用具備將被貼合在表面保護構件的被加工物透過該保護構件保持的挾盤載置台、及將被保持於該挾盤載置台的被加工物的背面磨削的磨削手段、及將被加工物的厚度測量的超音波測量手段之磨削裝置將被加工物的背面磨削將被加工物薄化至規定的厚度，其特徵為：該超音波測量手段，是包含：與該挾盤載置台的上面相面對配置，將該挾盤載置台的上面高度位置測量的第1超音波測量器、及與被保持在挾盤載置台的被加工物的上面相面對配置，從至將被振盪的超音波由被加工物的上面反射的反射波收訊為止的傳播時間、及至將由被加工物的下面反射的反射波收訊為止的傳播時間的差，將被加工物的實厚測量的第2超音波測量器，該被加工物的磨削方法，是具備：藉由一邊只由該第2超音波測量器測量被加工物的實厚，一邊至規定的厚度為止將被加工物的背面磨削的第1 磨削過程；及在該第1磨削過程終了時，依據從藉由該第1超音波測量器測量的挾盤載置台的上面高度位置及藉由該第2超音波測量器測量的被加工物的上面高度位置的差所求得的總厚、和藉由該第2超音波測量器測量的被加工物的實厚的差，算出保護構件的厚度的保護構件厚度算出過程；及該保護構件厚度算出過程實施後，從由該第2超音波測量器測量的被加工物的上面高度位置及由該第1超音波測量器測量的挾盤載置台的上面高度位置的差、和該保護構件的厚度，將磨削中的被加工物的厚度算出，將被加工物磨削至目標精加工厚度為止的第2磨削過程。 According to the present invention, it is possible to provide a method for grinding a workpiece by using a chucking table that holds a workpiece to be attached to a surface protection member through the protective member, and a chucking table to be held on the chucking table Grinding means for grinding the backside of the workpiece on the mounting table, and ultrasonic measuring means for measuring the thickness of the workpiece, grinding the backside of the workpiece and thinning the workpiece to a predetermined thickness It is characterized in that the ultrasonic measuring means includes: a first ultrasonic measuring device which is arranged to face the upper surface of the clamping plate mounting table and measures the height position of the upper surface of the clamping plate mounting table; and Arranged on the upper surface of the workpiece on the table, face to face, the propagation time from the reception of the oscillated supersonic wave reflected by the upper surface of the workpiece, and the reflection time from the lower surface of the workpiece The difference in the propagation time until the reception of the reflected wave, the second ultrasonic measuring device that measures the solid thickness of the processed object, and the grinding method of the processed object includes: by measuring only the second ultrasonic wave on one side Measuring the solid thickness of the workpiece, while grinding the back of the workpiece to the specified thickness Grinding process; and at the end of the first grinding process, according to the height position from the upper surface of the chucking table measured by the first ultrasonic measuring device and the processed object measured by the second ultrasonic measuring device The process of calculating the thickness of the protective member, which is the difference between the total thickness obtained by the difference in the upper height position of the object and the actual thickness of the workpiece measured by the second ultrasonic measuring device to calculate the thickness of the protective member; and the protection After the component thickness calculation process is implemented, the difference between the upper height position of the workpiece measured by the second ultrasonic measuring device and the upper height position of the clamping table measured by the first ultrasonic measuring device, and the protection The thickness of the member is a second grinding process in which the thickness of the workpiece during grinding is calculated, and the workpiece is ground to the target finishing thickness.

較佳是，在第1超音波測量器及挾盤載置台之間和第2超音波測量器及被加工物的被磨削面之間，是一邊充滿水一邊實施第1及第2磨削過程。 Preferably, the first and second grindings are carried out while being filled with water between the first ultrasonic measuring device and the clamping table and between the second ultrasonic measuring device and the ground surface of the workpiece process.

在本發明的磨削方法中，將被加工物的厚度測量的手段，因為是一邊使用超音波測量器測量被加工物的被磨削面的上面高度位置，一邊將被加工物磨削至目標精加工厚度為止，所以在被加工物的被磨削面不會殘留刮傷。 In the grinding method of the present invention, the method of measuring the thickness of the workpiece is to grind the workpiece to the target while measuring the height position of the upper surface of the workpiece by using an ultrasonic measuring instrument Until the thickness is finished, no scratches remain on the ground surface of the workpiece.

且至規定的厚度為止，是將被加工物的實厚一邊測量一邊磨削，被加工物的目標精加工厚度為止，因為是一邊測量挾盤載置台的上面高度位置及被加工物的被磨削面的上面高度位置一邊磨削加工，所以可以使用比較 便宜的超音波測量器將被加工物磨削至目標精加工厚度為止。 And up to the specified thickness, the actual thickness of the workpiece is ground while measuring, and the target finish thickness of the workpiece is measured, because it is measuring the height position of the upper surface of the platen mounting table and the ground of the workpiece The upper surface of the cut surface is grinded at the same time, so you can use the comparison An inexpensive ultrasonic measuring machine grinds the workpiece to the target finishing thickness.

進一步，即使在被加工物的表面被貼合保護構件，因為在測量被加工物的實厚的磨削中保護構件是藉由磨削壓力被按壓，所以保護構件的厚度參差不一被消解，可以將被加工物精度佳地磨削至目標精加工厚度為止。 Furthermore, even if the protective member is bonded to the surface of the workpiece, because the protective member is pressed by the grinding pressure during the measurement of the solid thickness of the workpiece, the uneven thickness of the protective member is eliminated, It is possible to grind the workpiece accurately to the target finishing thickness.

2‧‧‧磨削裝置 2‧‧‧Grinding device

4‧‧‧基座 4‧‧‧Dock

4a‧‧‧凹部 4a‧‧‧recess

6‧‧‧機身 6‧‧‧Body

8‧‧‧導引軌道 8‧‧‧Guide track

10‧‧‧磨削單元 10‧‧‧Grinding unit

11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer

11a‧‧‧下面 11a‧‧‧below

11a‧‧‧表面 11a‧‧‧Surface

11b‧‧‧上面 11b‧‧‧Top

11b‧‧‧背面 11b‧‧‧Back

12‧‧‧自旋軸外殼 12‧‧‧spindle housing

13‧‧‧格線 13‧‧‧Grid

14‧‧‧支撐部 14‧‧‧Support

15‧‧‧元件 15‧‧‧ Components

16‧‧‧移動基台 16‧‧‧Mobile base station

17‧‧‧元件領域 17‧‧‧Component field

18‧‧‧自旋軸 18‧‧‧ Spin axis

19‧‧‧外周多餘領域 19‧‧‧Excess peripheral area

20‧‧‧馬達 20‧‧‧Motor

21‧‧‧V形缺口 21‧‧‧V-shaped notch

22‧‧‧滾輪支架 22‧‧‧Roller bracket

23‧‧‧保護帶 23‧‧‧Protection belt

24‧‧‧磨輪 24‧‧‧Wheel

26‧‧‧滾輪基台 26‧‧‧Roller abutment

28‧‧‧磨削砥石 28‧‧‧ Grinding Whetstone

30‧‧‧滾珠螺桿 30‧‧‧ball screw

31‧‧‧螺栓 31‧‧‧bolt

32‧‧‧脈衝馬達 32‧‧‧Pulse motor

34‧‧‧磨削單元給進機構 34‧‧‧Grinding unit feed mechanism

36‧‧‧挾盤載置台機構 36‧‧‧Push table mounting mechanism

38‧‧‧挾盤載置台 38‧‧‧Push table

38a‧‧‧上面 38a‧‧‧Top

44‧‧‧操作盤 44‧‧‧Operation panel

48‧‧‧超音波測量手段 48‧‧‧ Ultrasonic measurement method

50‧‧‧第1超音波測量器 50‧‧‧The first ultrasonic measuring device

52，56‧‧‧圓筒構件 52, 56‧‧‧Cylinder member

54‧‧‧第2超音波測量器 54‧‧‧The second ultrasonic measuring device

58‧‧‧波形檢出部 58‧‧‧Wave Detection Department

60‧‧‧厚度算出部 60‧‧‧thickness calculation department

62‧‧‧控制手段 62‧‧‧Control means

64‧‧‧波形 64‧‧‧wave

66‧‧‧波形 66‧‧‧Waveform

68‧‧‧波形 68‧‧‧wave

[第1圖]可實施本發明的磨削方法的磨削裝置的立體圖。 [FIG. 1] A perspective view of a grinding device that can implement the grinding method of the present invention.

[第2圖]矽晶圓的表面側立體圖。 [Figure 2] A perspective view of the surface side of a silicon wafer.

[第3圖]在表面被貼合保護帶的狀態的矽晶圓的背面側立體圖。 [FIG. 3] A perspective view of the back side of a silicon wafer with a protective tape bonded to the surface.

[第4圖]說明第1及第2磨削過程的立體圖。 [Figure 4] A perspective view illustrating the first and second grinding processes.

[第5圖]說明第1磨削過程的一部分剖面側面圖。 [Figure 5] A partial cross-sectional side view illustrating the first grinding process.

[第6圖]顯示第1磨削過程中的第1及第2超音波測量器的波形圖的圖。 [Figure 6] A diagram showing the waveforms of the first and second ultrasonic measuring devices during the first grinding process.

[第7圖]說明第2磨削過程的一部分剖面側面圖。 [Figure 7] A partial cross-sectional side view illustrating a second grinding process.

[第8圖]顯示第2磨削過程中的第1及第2超音波測量器的波形圖的圖。 [Figure 8] A diagram showing waveform diagrams of the first and second ultrasonic measuring devices during the second grinding process.

以下，參照圖面詳細說明本發明的實施例。參照第1圖的話，顯示適合實施本發明的磨削方法的磨削裝置2的外觀立體圖。4是磨削裝置2的基座，在基座4的後方被立設有機身6。在機身6中，固定有朝上下方向延伸的一對的導軌8。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, a perspective view of the appearance of a grinding device 2 suitable for implementing the grinding method of the present invention is shown. 4 is a base of the grinding device 2, and a body 6 is erected behind the base 4. In the body 6, a pair of guide rails 8 extending in the vertical direction are fixed.

磨削單元(磨削手段)10是被裝設成可沿著此一對的導軌8朝上下方向移動。磨削單元10，是具有：自旋軸外殼12、及將自旋軸外殼12保持的支撐部14，支撐部14是被安裝於沿著一對的導軌8朝上下方向移動的移動基台16。 The grinding unit (grinding means) 10 is installed so as to be movable in the vertical direction along the pair of guide rails 8. The grinding unit 10 includes a spin shaft housing 12 and a support portion 14 that holds the spin shaft housing 12. The support portion 14 is attached to a moving base 16 that moves in the vertical direction along a pair of guide rails 8. .

磨削單元10，是包含：可旋轉地被收容於自旋軸外殼12中的自旋軸18、及將自旋軸18旋轉驅動的馬達20、及被固定於自旋軸18的先端的滾輪支架22、及可裝卸地被裝設於滾輪支架22的磨輪24。 The grinding unit 10 includes a spin shaft 18 rotatably housed in the spin shaft housing 12, a motor 20 that rotationally drives the spin shaft 18, and a roller fixed to the tip of the spin shaft 18 The bracket 22 and the grinding wheel 24 detachably attached to the roller bracket 22.

磨削裝置2，是具備將磨削單元10沿著一對的導引軌道8朝上下方向移動的由滾珠螺桿30及脈衝馬達32所構成的磨削單元給進機構34。將脈衝馬達32驅動的話，滾珠螺桿30會旋轉，移動基台16是被朝上下方向移動。 The grinding device 2 is provided with a grinding unit feeding mechanism 34 composed of a ball screw 30 and a pulse motor 32 that moves the grinding unit 10 along a pair of guide rails 8 in the vertical direction. When the pulse motor 32 is driven, the ball screw 30 rotates, and the moving base 16 is moved up and down.

在基座4的上面形成有凹部4a，在此凹部4a配設有挾盤載置台機構36。挾盤載置台機構36是具有挾盤載置台38，藉由無圖示的移動機構在晶圓裝卸位置A、及相面對於磨削單元10的磨削位置B之間朝Y軸方向被移動。40、42是蛇腹管。在基座4的前方側中，配設有 讓磨削裝置2的操作者將磨削條件等輸入的操作盤44。 A concave portion 4a is formed on the upper surface of the base 4, and a platen mounting table mechanism 36 is arranged in the concave portion 4a. The chuck mounting table mechanism 36 is provided with a chuck mounting table 38, and is moved in the Y-axis direction between the wafer loading and unloading position A and the grinding position B of the grinding unit 10 by the moving mechanism (not shown) . 40 and 42 are snake belly tubes. In the front side of the base 4, equipped with An operation panel 44 that allows an operator of the grinding device 2 to input grinding conditions and the like.

參照第2圖的話，半導體晶圓11，是例如由厚度700μm的矽晶圓構成，在表面11a複數格線(分割預定線)13是形成格子狀，並且在藉由複數格線13被區劃的各領域形成IC、LSI等的元件15。 Referring to FIG. 2, the semiconductor wafer 11 is composed of, for example, a silicon wafer with a thickness of 700 μm, and a plurality of grid lines (planned dividing lines) 13 are formed in a grid shape on the surface 11 a and are divided by the plurality of grid lines 13 Elements 15 such as ICs and LSIs are formed in various fields.

如此構成的半導體晶圓11，是具備：形成有元件15的元件領域17、及將元件領域17圍繞的外周多餘領域19。且，在半導體晶圓11的外周形成有作為顯示矽晶圓的結晶方位的記號的V形缺口21。 The semiconductor wafer 11 configured in this manner includes an element area 17 in which the element 15 is formed, and a peripheral outer area 19 surrounding the element area 17. In addition, a V-shaped notch 21 is formed on the outer periphery of the semiconductor wafer 11 as a mark indicating the crystal orientation of the silicon wafer.

在晶圓11的背面11b的磨削之前，在晶圓11的表面11a中，事先藉由保護帶貼合過程使保護帶23被貼合。保護帶23，是在聚乙烯氯乙烯、聚烯烴等的基材的表面配設糊層的構成。可取代保護帶23，將其他的保護構件貼合在晶圓11的表面11a也可以。 Before grinding the back surface 11 b of the wafer 11, the protective tape 23 is bonded in advance on the surface 11 a of the wafer 11 through the protective tape bonding process. The protective tape 23 is a structure in which a paste layer is provided on the surface of a base material such as polyvinyl chloride and polyolefin. Instead of the protective tape 23, another protective member may be attached to the surface 11a of the wafer 11.

本發明的磨削方法適用的被加工物，不限定於矽晶圓，即使在表面被貼合保護構件的光元件晶圓等的其他的板狀被加工物，也可適用本發明的磨削方法。 The workpiece to which the grinding method of the present invention is applied is not limited to silicon wafers, and the grinding of the present invention can be applied even to other plate-shaped workpieces such as an optical element wafer to which a protective member is bonded on the surface method.

在本發明的磨削方法中，由被定位在晶圓裝卸位置A的挾盤載置台38將晶圓11的保護帶23側吸引保持，使晶圓11的背面11b露出。且，藉由無圖示的移動機構將挾盤載置台38朝Y軸方向移動，使晶圓11被定位在相面對於磨輪24的第4圖所示的磨削位置。 In the grinding method of the present invention, the chucking table 38 positioned at the wafer loading and unloading position A sucks and holds the protective tape 23 side of the wafer 11 to expose the back surface 11 b of the wafer 11. Then, the chuck stage 38 is moved in the Y-axis direction by a moving mechanism (not shown), so that the wafer 11 is positioned at the grinding position shown in FIG. 4 with respect to the grinding wheel 24.

在第4圖中，磨輪24是藉由複數螺栓31可裝卸地被裝設在被固定於磨削單元10的自旋軸18的先端 的滾輪支架22中。磨輪24，是將複數磨削砥石28環狀地固定在滾輪基台26的自由端部(下端部)地構成。 In FIG. 4, the grinding wheel 24 is detachably attached to the tip of the spin shaft 18 fixed to the grinding unit 10 by plural bolts 31 Of the roller bracket 22. The grinding wheel 24 is configured by annularly fixing a plurality of grinding stones 28 to the free end (lower end) of the roller base 26.

如第5圖所示，超音波測量手段48，是包含：將挾盤載置台38的框體的上面38a的高度位置測量的第1超音波測量器50、及將晶圓11的厚度測量的第2超音波測量器54。 As shown in FIG. 5, the ultrasonic measuring means 48 includes: a first ultrasonic measuring device 50 that measures the height position of the upper surface 38a of the frame of the table mounting table 38 and the thickness of the wafer 11 The second ultrasonic measuring device 54.

第1及第2超音波測量器50、54是將頻率20MHz的超音波振盪的比較便宜的超音波測量器，可以將具有200μm以上的厚度的晶圓等的板狀被加工物的厚度正確地測量。 The first and second ultrasonic measuring devices 50 and 54 are relatively inexpensive ultrasonic measuring devices that oscillate ultrasonic waves with a frequency of 20 MHz, and can accurately measure the thickness of a plate-shaped object to be processed such as wafers having a thickness of 200 μm or more measuring.

較佳是，第1超音波測量器50及挾盤載置台38的上面38a之間的距離和第2超音波測量器54及晶圓11的上面(背面)11b之間的距離是設定成2~3mm程度。 Preferably, the distance between the first ultrasonic measuring device 50 and the upper surface 38a of the clamping table 38 and the distance between the second ultrasonic measuring device 54 and the upper surface (back surface) 11b of the wafer 11 are set to 2 ~3mm.

在第1超音波測量器50的先端部配設有圓筒構件52，在第2超音波測量器54的先端部配設有圓筒構件56。在由第1超音波測量器50所進行的挾盤載置台38的上面38a的高度位置的測量中純水是朝圓筒構件52中被供給，從超音波測量器50被振盪的超音波是在純水中傳播。 A cylindrical member 52 is arranged at the leading end of the first ultrasonic measuring device 50, and a cylindrical member 56 is arranged at the leading end of the second ultrasonic measuring device 54. In the measurement of the height position of the upper surface 38a of the platen mounting table 38 by the first ultrasonic measuring device 50, pure water is supplied toward the cylindrical member 52, and the ultrasonic wave oscillated from the ultrasonic measuring device 50 is Spread in pure water.

同樣地，在由第2超音波測量器54所進行的晶圓11的上面(背面)11b的高度位置的測量中，純水是被朝圓筒構件56中供給，從第2超音波測量器54被振盪的超音波是在純水中傳播到達晶圓11。 Similarly, in the measurement of the height position of the upper surface (back surface) 11b of the wafer 11 by the second ultrasonic measuring device 54, pure water is supplied into the cylindrical member 56 from the second ultrasonic measuring device 54 The oscillated ultrasonic wave propagates in pure water to wafer 11.

在第1磨削過程中，如第4圖所示，將挾盤 載置台38朝由箭頭a顯示的方向由例如300rpm旋轉，且將磨輪24朝由箭頭b顯示的方向由例如6000rpm旋轉，並且將磨削單元給進機構34驅動將磨輪24的磨削砥石28與晶圓11的背面11b接觸。 During the first grinding process, as shown in Figure 4, the The stage 38 is rotated by, for example, 300 rpm in the direction shown by arrow a, and the grinding wheel 24 is rotated by, for example, 6000 rpm in the direction shown by arrow b, and the grinding unit feeding mechanism 34 is driven to grind the grinding stone 28 of the grinding wheel 24 and The back surface 11b of the wafer 11 is in contact.

且將磨輪24由規定的磨削給進速度朝下方規定量磨削給進。如第5圖所示，一邊由非接觸式的超音波測量手段48測量晶圓11的厚度，一邊將晶圓11磨削至規定的厚度，即第2超音波測量器54的有效測量範圍也就是200μm為止。 Then, the grinding wheel 24 is fed downward by a predetermined amount of grinding feed speed at a predetermined amount. As shown in FIG. 5, while measuring the thickness of the wafer 11 by the non-contact ultrasonic measuring means 48, the wafer 11 is ground to a predetermined thickness, that is, the effective measurement range of the second ultrasonic measuring device 54 is also It is only 200μm.

在此第1磨削過程中，只有使用第2超音波測量器54一邊測量晶圓11的實厚一邊將磨削完成。即，依據將從第2超音波測量器54被振盪的超音波由晶圓11的上面(背面)11b反射的反射波收訊為止的傳播時間、及將從由晶圓11的下面(表面)11a反射的反射波收訊為止的傳播時間的差，算出晶圓11的厚度。 In this first grinding process, only the second ultrasonic measuring device 54 is used to complete the grinding while measuring the solid thickness of the wafer 11. That is, according to the propagation time until the reflected wave reflected from the upper surface (back surface) 11b of the wafer 11 is received by the ultrasonic waves oscillated by the second ultrasonic measuring device 54 and from the lower surface (surface) of the wafer 11 The difference in the propagation time until the reflected wave reflected by 11a is received, and the thickness of the wafer 11 is calculated.

參照第6圖的話，顯示第1磨削過程中的超音波測量手段48的波形圖。64是顯示第1超音波測量器50的波形圖，66是顯示由晶圓11的上面被反射的第2超音波測量器54的反射波的波形，68是顯示由晶圓11的下面被反射的反射波的波形。 Referring to FIG. 6, a waveform diagram of the ultrasonic measuring means 48 during the first grinding process is displayed. 64 is a waveform diagram showing the first ultrasonic measuring device 50, 66 is a waveform showing the reflected wave of the second ultrasonic measuring device 54 reflected from the upper surface of the wafer 11, 68 is a display showing the reflected wave from the lower surface of the wafer 11 Of the reflected wave.

晶圓11的下面11a的反射波的到達時間是從來自晶圓11的上面11b的反射波的到達時間遲延並由第2超音波測量器54被收訊。第1超音波測量器50的波形64及第2超音波測量器54的上面的反射波的波形66及 下面的反射波的波形68是由與超音波測量手段48連接的波形檢出部58被檢出。 The arrival time of the reflected wave of the lower surface 11a of the wafer 11 is delayed from the arrival time of the reflected wave from the upper surface 11b of the wafer 11 and is received by the second ultrasonic measuring device 54. The waveform 64 of the first ultrasonic measuring device 50 and the waveform 66 of the reflected wave on the upper surface of the second ultrasonic measuring device 54 and The waveform 68 of the following reflected wave is detected by the waveform detection unit 58 connected to the ultrasonic measuring means 48.

從由波形檢出部58被檢出的第2超音波測量器54的將由晶圓11的上面(背面)11b反射的反射波收訊為止的傳播時間、及將由晶圓11的下面(表面)11a反射的反射波收訊為止的傳播時間的差，由厚度算出部60一邊將晶圓11的厚度(實厚)算出一邊將第1磨削過程完成。 The propagation time from the second ultrasonic measuring device 54 detected by the waveform detection unit 58 to the reflected wave reflected by the top surface (back surface) 11b of the wafer 11 and the bottom surface (surface) of the wafer 11 The difference in the propagation time until reception of the reflected wave reflected by 11a is completed by the thickness calculation unit 60 while calculating the thickness (solid thickness) of the wafer 11.

在第1磨削過程中，雖也收訊第1超音波測量器50的挾盤載置台38的上面38a的反射波，但是此反射波是在晶圓11的實厚的測量中不會被利用。 In the first grinding process, although the reflected wave of the upper surface 38a of the clamping table 38 of the first ultrasonic measuring device 50 is also received, this reflected wave is not affected by the measurement of the solid thickness of the wafer 11 use.

在第6圖的波形圖中，箭頭70是顯示將晶圓11的上面的反射波收訊為止的時間及將晶圓11的下面的反射波收訊為止的時間差，將時間差設成t，將晶圓11中的音速設成v的話，在厚度算出部60中，晶圓11的厚度可以由vt/2算出。 In the waveform diagram of FIG. 6, arrow 70 shows the time difference between the time when the reflected wave on the upper surface of the wafer 11 is received and the time until the reflected wave on the lower surface of the wafer 11 is received. Set the time difference to t. When the sound velocity in the wafer 11 is set to v, the thickness of the wafer 11 in the thickness calculation unit 60 can be calculated from vt/2.

實施此第1磨削過程的話，因為保護帶23是藉由磨削壓力從上方被按壓，所以保護帶23的厚度的參差不一被消解，保護帶23是成為一樣的厚度。 When this first grinding process is performed, since the protective tape 23 is pressed from above by the grinding pressure, the unevenness of the thickness of the protective tape 23 is eliminated, and the protective tape 23 has the same thickness.

因此，在第1磨削過程的終了時，依據從藉由第1超音波測量器50測量的挾盤載置台38的上面38a的高度位置、及藉由第2超音波測量器54測量的晶圓11的上面11b的高度位置的差所求得的晶圓11+保護帶23的總厚、和藉由第2超音波測量器54測量的晶圓11的實厚的差，將保護帶23的厚度測量。 Therefore, at the end of the first grinding process, the height position from the upper surface 38a of the clamping table 38 measured by the first ultrasonic measuring device 50 and the crystal measured by the second ultrasonic measuring device 54 The difference between the total thickness of the wafer 11 + the protective tape 23 obtained by the difference in the height position of the upper surface 11b of the circle 11 and the solid thickness of the wafer 11 measured by the second ultrasonic measuring device 54 is the protective tape 23 Thickness measurement.

由厚度算出部60算出的晶圓11的厚度是成為規定的厚度，在本實施例中成為200μm的話，從厚度算出部60朝控制手段62將訊號送出，控制手段62是將磨削單元給進機構34的脈衝馬達32的旋轉停止，終了第1磨削過程。 The thickness of the wafer 11 calculated by the thickness calculation unit 60 is a predetermined thickness. In the present embodiment, when it becomes 200 μm, the signal is sent from the thickness calculation unit 60 toward the control means 62, which feeds the grinding unit The rotation of the pulse motor 32 of the mechanism 34 stops, and the first grinding process is terminated.

保護帶23的厚度算出過程實施後，實施將晶圓11磨削至目標精加工厚度為止的第2磨削過程。在此第2磨削過程中，如第7圖所示，從由第1超音波測量器50測量的挾盤載置台38的上面38a的高度位置、及由第2超音波測量器54測量的晶圓11的上面(背面)11b的高度位置的差、和保護帶23的厚度，由厚度算出部60將晶圓11的厚度算出，將晶圓11磨削至目標精加工厚度，例如50μm為止。 After the thickness calculation process of the protective tape 23 is implemented, a second grinding process is performed to grind the wafer 11 to the target finishing thickness. During this second grinding process, as shown in FIG. 7, the height position of the upper surface 38a of the clamping table 38 measured by the first ultrasonic measuring device 50 and the second ultrasonic measuring device 54 measured The difference in the height position of the top surface (back surface) 11b of the wafer 11 and the thickness of the protective tape 23 are calculated by the thickness calculation unit 60 to grind the wafer 11 to a target finishing thickness, for example, 50 μm .

參照第8圖的話，顯示第2磨削過程中的第1超音波測量器50及第2超音波測量器54的波形圖。66是顯示從第2超音波測量器54被振盪的超音波的晶圓11的上面(背面)11b中的反射波，顯示隨著晶圓11的磨削的進行，將反射波收訊為止的傳播時間漸漸遲延。 Referring to FIG. 8, waveform diagrams of the first ultrasonic measuring device 50 and the second ultrasonic measuring device 54 during the second grinding process are displayed. 66 shows the reflected wave on the upper surface (back surface) 11b of the wafer 11 oscillated from the second ultrasonic measuring device 54 and shows that the reflected wave is received as the grinding of the wafer 11 progresses The propagation time is gradually delayed.

在本實施例中在被安裝於第1超音波測量器50的先端的圓筒52及被安裝於第2超音波測量器54的先端的圓筒56中一邊將純水充滿一邊測量實施，因為晶圓11的磨削是一邊供給磨削水一邊實施，所以磨削屑會混入磨削水中，因此將混入了此磨削屑的磨削水一邊由供給至圓筒構件52、56中的純水排除一邊實施厚度的測 量。 In this embodiment, the cylinder 52 attached to the tip of the first ultrasonic measuring device 50 and the cylinder 56 attached to the front of the second ultrasonic measuring device 54 are measured while being filled with pure water, because The grinding of the wafer 11 is performed while supplying the grinding water, so the grinding chips are mixed into the grinding water, so the grinding water mixed with the grinding chips is supplied to the cylindrical members 52 and 56 by the pure Carry out thickness measurement while removing water the amount.

在上述的實施例中，因為利用將20MHz的超音波振盪的比較便宜的超音波振盪器，一邊將晶圓11的厚度由非接觸測量一邊將晶圓11藉由第1磨削過程及第2磨削過程磨削至目標精加工厚度為止，所以在被加工物的磨削面不會刮傷，無關進一步被加工物的種類可以一邊測量被加工物的實厚一邊實施第1磨削過程。 In the above-mentioned embodiment, since a relatively inexpensive ultrasonic oscillator that oscillates a 20 MHz ultrasonic wave is used, the thickness of the wafer 11 is measured by non-contact while the wafer 11 is subjected to the first grinding process and the second The grinding process grinds to the target finishing thickness, so the grinding surface of the workpiece is not scratched, and the first grinding process can be performed while measuring the actual thickness of the workpiece regardless of the type of the workpiece.

在上述的實施例中，雖說明了在表面被貼合保護構件的被加工物的磨削方法，但是本發明的磨削方法不限定於此，對於在表面未被貼合保護構件的被加工物也同樣地可以適用。 In the above-mentioned embodiment, although the grinding method of the workpiece to which the protective member is bonded to the surface is described, the grinding method of the present invention is not limited to this, and the processing to which the protective member is not bonded to the surface is processed The same applies to objects.

10‧‧‧磨削單元 10‧‧‧Grinding unit

11‧‧‧半導體晶圓 11‧‧‧Semiconductor wafer

11a‧‧‧下面 11a‧‧‧below

11a‧‧‧表面 11a‧‧‧Surface

11b‧‧‧上面 11b‧‧‧Top

11b‧‧‧背面 11b‧‧‧Back

18‧‧‧自旋軸 18‧‧‧ Spin axis

22‧‧‧滾輪支架 22‧‧‧Roller bracket

23‧‧‧保護帶 23‧‧‧Protection belt

24‧‧‧磨輪 24‧‧‧Wheel

26‧‧‧滾輪基台 26‧‧‧Roller abutment

28‧‧‧磨削砥石 28‧‧‧ Grinding Whetstone

38‧‧‧挾盤載置台 38‧‧‧Push table

38a‧‧‧上面 38a‧‧‧Top

48‧‧‧超音波測量手段 48‧‧‧ Ultrasonic measurement method

50‧‧‧第1超音波測量器 50‧‧‧The first ultrasonic measuring device

52‧‧‧圓筒構件 52‧‧‧Cylinder member

54‧‧‧第2超音波測量器 54‧‧‧The second ultrasonic measuring device

56‧‧‧圓筒構件 56‧‧‧Cylinder member

58‧‧‧波形檢出部 58‧‧‧Wave Detection Department

60‧‧‧厚度算出部 60‧‧‧thickness calculation department

62‧‧‧控制手段 62‧‧‧Control means

Claims (2)

一種被加工物的磨削方法，是使用磨削裝置將被加工物的背面磨削將被加工物薄化至規定的厚度，該磨削裝置，具備：將被貼合在表面保護構件的該被加工物透過該保護構件保持的挾盤載置台、及將被保持於該挾盤載置台的該被加工物的背面磨削的磨削手段、及將該被加工物的厚度測量的超音波測量手段，其特徵為：該超音波測量手段，包含：第1超音波測量器，是與該挾盤載置台的上面相面對配置，將該挾盤載置台的上面高度位置測量；及第2超音波測量器，是與被保持在該挾盤載置台的該被加工物的上面相面對配置，從至將被振盪的超音波由該被加工物的上面反射的反射波收訊為止的傳播時間、及至將由該被加工物的下面反射的反射波收訊為止的傳播時間的差，將該被加工物的實厚測量；該被加工物的磨削方法，具備：一邊只由該第2超音波測量器測量該被加工物的實厚，一邊至規定的厚度為止將該被加工物的背面磨削的第1磨削過程；及在該第1磨削過程終了時，依據從藉由該第1超音波測量器測量的該挾盤載置台的上面高度位置及藉由該第2超音波測量器測量的該被加工物的上面高度位置的差所求得的總厚、和藉由該第2超音波測量器測量的該被加工物 的實厚的差，算出該保護構件的厚度的保護構件厚度算出過程；及該保護構件厚度算出過程實施後，從由該第2超音波測量器測量的該被加工物的上面高度位置及由該第1超音波測量器測量的該挾盤載置台的上面高度位置的差、和該保護構件的厚度，將磨削中的該被加工物的厚度算出，將該被加工物磨削至目標精加工厚度為止的第2磨削過程。 A method of grinding a workpiece is to use a grinding device to grind the back surface of the workpiece to thin the workpiece to a predetermined thickness. The grinding device includes: a surface to be bonded to a surface protection member A workpiece carrying table held by the protection member, a grinding means for grinding the back surface of the workpiece held on the cardboard holding table, and an ultrasonic wave measuring the thickness of the workpiece The measuring means is characterized in that: the ultrasonic measuring means includes: a first ultrasonic measuring device, which is arranged to face the upper surface of the clamping plate mounting table, and measures the height position of the upper plate mounting table; and 2 Ultrasonic measuring instrument is arranged to face the upper surface of the object to be held on the table mounting table, until the oscillated ultrasonic wave is received by the reflected wave reflected from the upper surface of the object The difference between the propagation time and the propagation time until the reflected wave reflected from the lower surface of the object is received, and the solid thickness of the object is measured; the grinding method of the object includes: The second ultrasonic measuring device measures the solid thickness of the workpiece, while grinding the back surface of the workpiece to the specified thickness to the first grinding process; and at the end of the first grinding process, based on The total thickness obtained by the difference between the upper height position of the clamping table measured by the first ultrasonic measuring device and the upper height position of the workpiece measured by the second ultrasonic measuring device, and The workpiece to be measured by the second ultrasonic measuring device The difference in the actual thickness of the protective member thickness calculation process for calculating the thickness of the protective member; and after the implementation of the protective member thickness calculation process, from the upper height position of the workpiece measured by the second ultrasonic measuring device The difference in the height position of the upper surface of the chucking table measured by the first ultrasonic measuring device and the thickness of the protective member are calculated by grinding the thickness of the workpiece to be ground to the target The second grinding process up to the finishing thickness. 如申請專利範圍第1項的被加工物的磨削方法，其中，前述第1超音波測量器及該挾盤載置台之間、及前述第2超音波測量器及該被加工物的背面之間是由水被充滿。 The method for grinding a processed object as claimed in item 1 of the patent scope, wherein between the first ultrasonic measuring device and the chuck mounting table, and the back surface of the second ultrasonic measuring device and the processed object The room is filled with water.
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