TWI678004B - Chip scale package led - Google Patents
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Abstract
本發明主要係以一LED晶粒、覆於該LED晶粒之上的一透光導熱層、以及覆於該透光導熱層之上的一透光聚合物層構成新式的晶片封裝級發光二極體元件。根據本發明之設計，於該LED晶粒發光時，所述透光導熱層會透過熱傳導而使傳入該透光聚合物層的熱均勻分布；同時，該透光導熱層也會透過熱傳導達成對該LED晶粒的一熱排除功效。顯然地，在控制傳入該透光聚合物層的熱能能夠均勻分布的情況下，可以避免透光聚合物層因為熱於內部的某一處過度集中而導致該處發生黃化現象。The invention mainly consists of an LED die, a light-transmitting heat-conducting layer overlying the LED die, and a light-transmitting polymer layer overlying the light-transmitting heat-conducting layer to form a novel chip package-level light-emitting diode. Polar body element. According to the design of the present invention, when the LED die emits light, the light-transmitting and thermally-conductive layer transmits heat to the light-transmitting polymer layer and uniformly distributes the heat; at the same time, the light-transmitting and thermally-conductive layer also achieves heat transmission. A thermal exclusion effect on the LED die. Obviously, under the condition that the heat energy introduced into the light-transmitting polymer layer can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer due to excessive concentration of heat in the interior can be avoided.
Description
本發明係關於發光二極體元件的相關技術領域，尤指一種晶片封裝級發光二極體元件。The present invention relates to the related technical field of light-emitting diode elements, and more particularly to a chip-package-level light-emitting diode element.
自愛迪生發明燈泡之後，隨著科技之進步，人類所使用的光源已由燈泡發展至白熾燈(Incandescent bulb)以及螢光燈(Fluorescent tube)；並且，進一步地，目前最新的照明技術為固態照明(Solid-state lighting, SSL)技術，例如發光二極體（Light-emitting diode, LED）、有機發光半導體(Organic light-emitting diode, OLED)以及高分子發光二極體(Polymer light-emitting diode, PLED)都是固態照明技術之產物。Since Edison invented the light bulb, with the advancement of technology, the light source used by humans has evolved from light bulbs to incandescent bulbs and fluorescent tubes; and further, the latest lighting technology is solid-state lighting. (Solid-state lighting, SSL) technologies, such as Light-emitting diodes (LEDs), Organic light-emitting diodes (OLEDs), and Polymer light-emitting diodes, PLED) are the products of solid-state lighting technology.
LED為目前廣泛應用之發光二極體，由於其具有體積小、使用壽命長等優點，因而被廣泛地應用於人類的日常生活之中。LED的電子元件的封裝結構類型通常根據LED的發光顏色、LED的發光亮度、電子元件的尺寸大小等特徵來分類。一般而言，超高亮度的LED的電子元件所採用的封裝結構為塑封帶引線片式載體(Plastic leaded chip carrier, PLCC)。小尺寸的LED的電子元件的封裝結構則通常為四方平面無引腳封裝(Quad flat no leads, QFN)。LED is a light-emitting diode widely used at present. Because of its small size and long service life, LED is widely used in human daily life. The packaging structure type of LED's electronic components is usually classified according to the characteristics such as the color of the LED, the brightness of the LED, and the size of the electronic component. Generally speaking, the packaging structure used for electronic components of ultra-high-brightness LEDs is a plastic leaded chip carrier (PLCC). The packaging structure of electronic components of small-sized LEDs is usually a quad flat no leads (QFN) package.
值得注意的是，隨著LED背光源被廣泛地應用至顯示器、平板電腦、與智慧型手機，LED的電子元件的尺寸被要求必須進一步地微縮至微米尺寸。Mini LED 又名「次毫米發光二極體」，最早是由晶元光電(EPISTAR Corporation)所提出，晶粒的對角線長度介於50微米至60微米之間的 LED。Micro LED 則是新一代顯示技術，是將 LED 晶粒進一步地微小化，使其晶粒的對角線長度小於 50 微米；同時，透過薄膜化、陣列化與單獨驅動發光的技術來實現每個LED 晶粒之圖元單獨定址。It is worth noting that as LED backlights are widely used in displays, tablets, and smart phones, the size of LED electronic components must be further reduced to the micron size. Mini LED, also known as "sub-millimeter light-emitting diode", was first proposed by EPISTAR Corporation. The LED has a diagonal length between 50 microns and 60 microns. Micro LED is a new generation of display technology. It is to further miniaturize the LED crystal grains so that the diagonal length of the crystal grains is less than 50 micrometers. At the same time, each of them is realized through thin film, array and individually driven light emission technologies. The pixels of the LED die are individually addressed.
晶片封裝級(Chip scale package, CSP)目前已經被廣泛地應用於Mini LED之製造。圖1係顯示習知的晶片封裝級LED電子元件的第一架構的側面剖視圖。如圖1所示，該晶片封裝級LED電子元件1’的基本結構係包括：一LED晶粒11’與覆於該LED晶粒11’之上的一光轉換膜12’，其中該LED晶粒11’係以其電極111’電連接至一基板2’(例如:PCB)。並且，該光轉換膜12’可以是摻有螢光粉的透光膜。另一方面，隨著量子點(Quantum dot, QD)的製造技術越發成熟，該光轉換膜12’也可以是摻有量子點的透光膜。Chip scale package (CSP) has been widely used in the manufacture of Mini LED. FIG. 1 is a side cross-sectional view showing a first architecture of a conventional chip-package-level LED electronic component. As shown in FIG. 1, the basic structure of the chip package-level LED electronic component 1 ′ includes: an LED die 11 ′ and a light conversion film 12 ′ overlying the LED die 11 ′, wherein the LED crystal The particle 11 'is electrically connected to a substrate 2' (for example, a PCB) with its electrode 111 '. The light conversion film 12 'may be a light-transmitting film doped with a fluorescent powder. On the other hand, as the manufacturing technology of quantum dots (QDs) becomes more mature, the light conversion film 12 'may also be a light-transmitting film doped with quantum dots.
圖2係顯示習知的晶片封裝級LED電子元件的第二架構的側面剖視圖。比較圖1與圖2可以得知，晶片封裝級LED電子元件1’的第二架構係進一步包括：一透明矽膠13’，係覆於該光轉換膜12’之上，用以固定該光轉換膜12’。另一方面，圖3係顯示習知的晶片封裝級LED電子元件的第三架構的側面剖視圖。比較圖1與圖3可以得知，晶片封裝級LED電子元件1’的第三架構係包括：一LED晶粒11’、包覆該LED晶粒11’周邊的一二氧化鈦保護層14’、以及設置於該LED晶粒11’與該二氧化鈦保護層14’之上的一光轉換膜12’。FIG. 2 is a side cross-sectional view showing a second architecture of a conventional chip-package-level LED electronic component. Comparing FIG. 1 and FIG. 2, it can be known that the second architecture of the chip package-level LED electronic component 1 ′ further includes: a transparent silicon 13 ′, which is covered on the light conversion film 12 ′, and is used for fixing the light conversion. Membrane 12 '. On the other hand, FIG. 3 is a side cross-sectional view showing a third architecture of a conventional chip-package-level LED electronic component. Comparing FIG. 1 with FIG. 3, it can be known that the third architecture of the chip package-level LED electronic component 1 ′ includes an LED die 11 ′, a titanium dioxide protective layer 14 ′ surrounding the LED die 11 ′, and A light conversion film 12 'is disposed on the LED die 11' and the titanium dioxide protective layer 14 '.
值得注意的是，環氧樹脂最常被用於該透光膜的製作。因此，在長期使用該晶片封裝級LED電子元件1’之後，環氧樹脂製成的透光膜會產生黃化現象。由此可知，實有必要針對晶片封裝級LED電子元件1’的透光膜之熱致黃化現象提出改善方案。有鑑於此，本案之發明人係極力加以研究發明，而終於研發完成本發明之一種晶片封裝級發光二極體元件。It is worth noting that epoxy resin is most commonly used in the manufacture of this light-transmitting film. Therefore, after long-term use of the chip package-level LED electronic component 1 ', the yellowing phenomenon may occur in the light-transmitting film made of epoxy resin. It can be seen from this that it is really necessary to propose an improvement solution for the thermal yellowing phenomenon of the light-transmitting film of the chip package-level LED electronic component 1 '. In view of this, the inventor of this case has made great efforts to research and invent, and finally developed and completed a chip package-level light emitting diode device of the present invention.
習知技術係利用晶片封裝級封裝(CSP)技術直接於設置於基板之上的至少一LED晶粒覆上光轉換膜，獲得所謂的晶片封裝級LED電子元件。然而，由於光轉換膜直接接觸該LED晶粒，因此在長期使用晶片封裝級LED電子元件之後，光轉換膜之中的透光聚合物會產生黃化現象。有鑑於此，本發明主要目的在於提供新式的一種晶片封裝級發光二極體元件，其係於結構上主要包括：一LED晶粒、覆於該LED晶粒之上的一透光導熱層、以及覆於該透光導熱層之上的一透光聚合物層。根據本發明之設計，於該LED晶粒發光時，所述透光導熱層會透過熱傳導而使傳入該透光聚合物層的熱均勻分布；同時，該透光導熱層也會透過熱傳導達成對該LED晶粒的一熱排除功效。顯然地，在控制傳入該透光聚合物層的熱能能夠均勻分布的情況下，可以避免透光聚合物層因為熱於內部的某一處過度集中而導致該處發生黃化現象。同理，在晶片封裝級發光二極體元件長期使用的情況下，熱排除功效有助於延緩或防止該透光聚合物層發生黃化現象。The conventional technology uses a chip package level packaging (CSP) technology to directly cover at least one LED die disposed on a substrate with a light conversion film to obtain a so-called chip package level LED electronic component. However, since the light-converting film directly contacts the LED die, after a long-term use of the chip-package-level LED electronic components, the light-transmitting polymer in the light-converting film will have a yellowing phenomenon. In view of this, the main purpose of the present invention is to provide a new type of chip package-level light-emitting diode device. The structure mainly includes: an LED die, a light-transmitting heat-conducting layer overlying the LED die, And a light-transmitting polymer layer overlying the light-transmitting heat-conducting layer. According to the design of the present invention, when the LED die emits light, the light-transmitting and thermally-conductive layer transmits heat to the light-transmitting polymer layer and uniformly distributes the heat; at the same time, the light-transmitting and thermally-conductive layer also achieves heat transmission. A thermal exclusion effect on the LED die. Obviously, under the condition that the heat energy introduced into the light-transmitting polymer layer can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer due to excessive concentration of heat in the interior can be avoided. Similarly, in the case of long-term use of the chip package-level light emitting diode device, the heat elimination effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer.
為了達成上述本發明之主要目的，本案發明人係提供所述晶片封裝級發光二極體元件的一第一實施例，係包括： 至少一LED晶粒，係具有二電極用以電性連接至對應的二電性連接墊； 一透光導熱層，係覆於該LED晶粒之上；以及 一透光聚合物層，係覆於該透光導熱層之上； 其中，該透光導熱層的折射率係大於該透光聚合物層的折射率； 其中，於該LED晶粒發光時，該透光導熱層係透過熱傳導而使傳入該透光聚合物層的熱均勻分布；同時，該透光導熱層係透過熱傳導達成對該LED晶粒的一熱排除功效。In order to achieve the above-mentioned main object of the present invention, the inventor of the present invention provides a first embodiment of the chip package-level light-emitting diode element, including: at least one LED die, having two electrodes for electrically connecting to Corresponding two electrical connection pads; a light-transmitting heat-conducting layer overlying the LED die; and a light-transmitting polymer layer overlying the light-transmitting heat-conductive layer; The refractive index of is greater than the refractive index of the light-transmitting polymer layer; wherein, when the LED die emits light, the light-transmitting heat-conducting layer uniformly distributes the heat introduced into the light-transmitting polymer layer through thermal conduction; The light-transmitting heat-conducting layer achieves a heat-removing effect on the LED die through thermal conduction.
於所述晶片封裝級發光二極體元件的第一實施例之中，係更包括：由透明矽膠製成的一保護層，係覆於該透光聚合物層之上。In the first embodiment of the chip package-level light-emitting diode device, the system further includes: a protective layer made of transparent silicone, which is covered on the transparent polymer layer.
並且，為了達成上述本發明之主要目的，本案發明人係提供具有所述晶片封裝級發光二極體元件的一第二實施例，係包括： 至少一LED晶粒，係具有二電極用以電性連接至對應的二電性連接墊； 一側保護層，係包圍該LED晶粒的側面； 一透光導熱層，係形成於該LED晶粒之上與該側保護層之上；以及 一透光聚合物層，係形成於該透光導熱層之上； 其中，該透光導熱層的折射率係大於該透光聚合物層的折射率； 其中，於該LED晶粒發光時，該透光導熱層係透過熱傳導而使傳入該透光聚合物層的熱均勻分布；同時，該透光導熱層係透過熱傳導達成對該LED晶粒的一熱排除功效。In addition, in order to achieve the above-mentioned main object of the present invention, the inventor of the present invention provides a second embodiment having the chip package-level light-emitting diode element, including: at least one LED die, having two electrodes for electricity Is connected to the corresponding two electrical connection pads; a protective layer on one side surrounds the side of the LED die; a light-transmitting heat-conducting layer is formed on the LED die and on the protective layer on the side; and The light-transmitting polymer layer is formed on the light-transmitting thermally conductive layer; wherein the refractive index of the light-transmitting and thermally conductive layer is greater than the refractive index of the light-transmitting polymer layer; and when the LED die emits light, the The light-transmitting heat-conducting layer uniformly distributes the heat introduced into the light-transmitting polymer layer through thermal conduction; at the same time, the light-transmitting heat-conducting layer achieves a heat-removing effect on the LED die through thermal conduction.
為了能夠更清楚地描述本發明所提出之一種晶片封裝級發光二極體元件，以下將配合圖式，詳盡說明本發明之較佳實施例。In order to more clearly describe a chip package-level light-emitting diode device provided by the present invention, the preferred embodiments of the present invention will be described in detail below with reference to the drawings.
第一實施例First embodiment
請參閱圖4，係顯示本發明之一種晶片封裝級發光二極體元件之第一實施例的第一側剖視圖。如圖4所示，本發明之晶片封裝級發光二極體元件1係於結構上包括：一LED晶粒11、覆於該LED晶粒11之上的一透光導熱層12、以及覆於該透光導熱層12之上的一透光聚合物層13。如熟悉LED製造的元件工程師所熟知的，LED晶粒11通常被設計用以發出一短波長色光，例如:藍光、紫光、或紫外光等。值得注意的是，若設計此晶片封裝級發光二極體元件1為藍光LED元件，則透光聚合物層13內不須包覆或摻雜任何光轉換粒子。另一方面，若設計此晶片封裝級發光二極體元件1為紅光LED元件、綠光LED元件、或白光LED元件，透光聚合物層13內則必須包覆或摻雜複數個光轉換粒子，例如：量子點或螢光粉。另一方面，常用的透光聚合物層13的製造材料為環氧樹脂(Epoxy resin)或矽氧烷樹脂(Oxane resin)。常見的矽氧烷樹脂包括：聚二甲基矽氧烷(PDMS)、矽膠(silica gel)、矽酮(silicone)、與矽橡膠(Silicone rubber)。Please refer to FIG. 4, which is a first side cross-sectional view showing a first embodiment of a chip package-level light emitting diode device according to the present invention. As shown in FIG. 4, the chip package-level light-emitting diode element 1 of the present invention is structurally composed of an LED die 11, a light-transmitting heat-conducting layer 12 overlying the LED die 11, and an overlying A light-transmissive polymer layer 13 is disposed on the light-transmissive thermally conductive layer 12. As is well known to component engineers familiar with LED manufacturing, the LED die 11 is usually designed to emit a short-wave color light, such as blue light, violet light, or ultraviolet light. It is worth noting that if the chip package-level light-emitting diode element 1 is designed as a blue LED element, the light-transmitting polymer layer 13 need not be covered or doped with any light-converting particles. On the other hand, if the chip package-level light-emitting diode element 1 is designed to be a red LED element, a green LED element, or a white LED element, the light-transmitting polymer layer 13 must be covered or doped with a plurality of light conversions. Particles, such as quantum dots or phosphors. On the other hand, a commonly used material for manufacturing the light-transmitting polymer layer 13 is an epoxy resin or an oxane resin. Common silicone resins include: polydimethylsiloxane (PDMS), silicone gel, silicone, and silicone rubber.
繼續地參閱圖5，係顯示本發明之晶片封裝級發光二極體元件的應用例的立體圖。由圖4與圖5可知，此晶片封裝級發光二極體元件1可以一陣列形式被排列在一基板2，例如:藍寶石(Sapphire)基板或尖晶石(Spinnel)基板。值得注意的是，應用於顯示器領域時，陣列排列的晶片封裝級發光二極體元件1會被巨量轉移(Mass transfer)至另一接合基板之上，例如: 碳化矽(SiC) 基板、陶瓷基板、聚醯亞胺(Polyimide)基板、硬質印刷電路板、或軟性印刷電路板。如圖所示，每個LED晶粒11皆具有二個電極111，用以電性連接至該基板2對應的電性連接墊21。因此，若陣列所包含的晶片封裝級發光二極體元件1全部是白光LED元件，則表示陣列與基板2係用以構成一背光單元。另一方面，若排成陣列的晶片封裝級發光二極體元件1包括紅光LED元件、綠光LED元件與藍光LED元件，則表示陣列與基板2係用以構成一顯示器單元。Continuing to refer to FIG. 5, it is a perspective view showing an application example of the chip package-level light emitting diode device of the present invention. As can be seen from FIG. 4 and FIG. 5, the chip package-level light-emitting diode element 1 can be arranged on an substrate 2 in an array, such as a sapphire substrate or a spinel substrate. It is worth noting that, when applied to the display field, the array-packaged chip package-level light-emitting diode element 1 will be mass transferred to another bonding substrate, such as: silicon carbide (SiC) substrate, ceramic A substrate, a polyimide substrate, a rigid printed circuit board, or a flexible printed circuit board. As shown in the figure, each LED die 11 has two electrodes 111 for electrically connecting to the electrical connection pad 21 corresponding to the substrate 2. Therefore, if the chip package-level light-emitting diode elements 1 included in the array are all white LED elements, it means that the array and the substrate 2 are used to constitute a backlight unit. On the other hand, if the chip package-level light-emitting diode elements 1 arranged in an array include red LED elements, green LED elements, and blue LED elements, it means that the array and the substrate 2 are used to constitute a display unit.
請再重複參閱圖4與圖5。根據本發明之設計，於該LED晶粒11發光時，所述透光導熱層12會透過熱傳導而使傳入該透光聚合物層13的熱均勻分布；同時，該透光導熱層12也會透過熱傳導達成對該LED晶粒11的一熱排除功效。顯然地，在控制傳入該透光聚合物層13的熱能夠均勻分布的情況下，可以避免透光聚合物層13因為熱於內部的某一處過度集中而導致該處發生黃化現象。同理，在晶片封裝級發光二極體元件1長期使用的情況下，熱排除功效有助於延緩或防止該透光聚合物層13發生黃化現象。Please refer to FIG. 4 and FIG. 5 again. According to the design of the present invention, when the LED die 11 emits light, the light-transmitting heat-conducting layer 12 uniformly distributes the heat introduced into the light-transmitting polymer layer 13 through heat conduction; at the same time, the light-transmitting heat-conducting layer 12 also A heat removal effect on the LED die 11 is achieved through thermal conduction. Obviously, under the condition that the heat introduced into the light-transmitting polymer layer 13 can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer 13 due to excessive concentration of heat in the interior can be avoided. Similarly, in a case where the chip package-level light-emitting diode element 1 is used for a long period of time, the heat removal effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer 13.
所述透光導熱層12係包括：一透光聚合物與包覆或摻雜於該導熱性聚合物之中的至少一導熱材料。其中，所述透光聚合物的製程材料例如聚二甲基矽氧烷(Polydimethylsiloxane, PDMS)、聚甲基丙烯酸甲酯(Poly(methyl methacrylate), PMMA)、聚苯乙烯(Polystyrene, PS)、聚對苯二甲酸乙二醇酯(Polyethylene terephthalate, PET)、聚碳酸酯(Polycarbonate, PC)、環烯烴共聚物(Cyclo olefin copolymer, COC)、環嵌段共聚物(cyclic block copolymer, CBC)、聚乳酸(Polylactic acid, PLA)、聚醯亞胺(Polyimide, PI)、前述任兩者之組合、或前述任兩者以上之組合。The light-transmitting heat-conducting layer 12 includes a light-transmitting polymer and at least one heat-conducting material coated or doped in the heat-conducting polymer. Wherein, the process materials of the light-transmitting polymer are, for example, polydimethylsiloxane (PDMS), poly (methyl methacrylate, PMMA), polystyrene (PS), Polyethylene terephthalate (PET), Polycarbonate (PC), Cyclo olefin copolymer (COC), cyclic block copolymer (CBC), Polylactic acid (PLA), polyimide (PI), a combination of any of the foregoing, or a combination of any two or more of the foregoing.
另一方面，所述導熱材料可以是Si xTi yO 4-z(0.01＜x＜1,0.01＜y＜1,-2＜z＜2)、Si xTi yO 4-z/OG、SiTiO 4-u(0＜u＜1)、SiO 2-v(0＜v＜1)、SiC、SiC/TiO 2複合物、石墨烯、氧化石墨烯、多晶相氧化鋁透明陶瓷、氮氧化鋁(AlON)透明陶瓷、YAG透明陶瓷、M:YAG透明陶瓷、氧化鎂(MgO)、氧化鋅(ZnO)、氮化鋁(AlN)、氮化硼(BN)、碳化矽(SiC)。其中，所述OG表示有機分子，例如：2,4-戊烷二酮(2,4-pentanedione)。並且，所述M可為下列任一者：釹(Nd)、鈰(Ce)、釓(Gd)、鏑(Dy)、或鉺(Er)。值得注意的是，在不考量製造成本的情況下，可以直接將導熱材料塗佈(coating)於該LED晶粒11以做為所述透光導熱層12。 On the other hand, the thermally conductive material may be Si x Ti y O 4-z (0.01 <x <1,0.01 <y <1, -2 <z <2), Si x Ti y O 4-z / OG, SiTiO 4-u (0 <u <1), SiO 2-v (0 <v <1), SiC, SiC / TiO 2 composite, graphene, graphene oxide, polycrystalline alumina transparent ceramic, oxynitride Aluminum (AlON) transparent ceramics, YAG transparent ceramics, M: YAG transparent ceramics, magnesium oxide (MgO), zinc oxide (ZnO), aluminum nitride (AlN), boron nitride (BN), and silicon carbide (SiC). Wherein, the OG represents an organic molecule, for example: 2,4-pentanedione. And, the M may be any one of the following: neodymium (Nd), cerium (Ce), gadolinium (Gd), gadolinium (Dy), or gadolinium (Er). It is worth noting that, without considering the manufacturing cost, a thermally conductive material can be directly coated on the LED die 11 as the light-transmitting thermally conductive layer 12.
請繼續參閱圖6，係顯示本發明之晶片封裝級發光二極體元件之第一實施例的第二側剖視圖。與圖4相較之下，可以發現圖6的晶片封裝級發光二極體元件1又更包括一緩衝層BF，其係覆於該LED晶粒11之上，並位於該透光導熱層12與該LED晶粒11之間。緩衝層BF也是由前面所述的任一種導熱材料製成。為了增進晶片封裝級發光二極體元件1的出光效果，選擇用以製造該透光導熱層12的第一導熱材料與用以製造該緩衝層BF的第二導熱材料之時，必須注意第二導熱材料的折射率必須高於第一導熱材料的折射率。同時，也必須注意透光導熱層12的折射率必須高於透光聚合物層13的折射率。常見的透光聚合物層13的製造材料為環氧樹脂(Epoxy resin)與矽氧烷樹脂(Oxane resin)，其折射率分別為1.5-1.56與1.4-1.53。另一方面，示範性的第一導熱材料與第二導熱材料的搭配選用係整理於下表(1)之中。 表(1)
前述說明指出透光聚合物層13可以包覆或被摻雜複數個光轉換粒子，例如：量子點或螢光粉。下表(2)係示範性地列出常用的幾種量子點材料。同時，量子點的尺寸大小與其光激螢光的光色之關係可參考下表(3)的有關整理。 表(2)
另一方面，所述螢光粉可為下列任一者：矽酸鹽類螢光粉、鋁酸鹽類螢光粉、磷酸鹽類螢光粉、硫化物螢光粉、氮化物螢光粉、氮氧化物螢光粉、上述任兩者之組合、或上述任兩者以上之組合。下表(4)係示範性地列出常用的幾種螢光粉材料。 表(4)
上表(2)與表(4)僅列出光轉換粒子的示範性材料，但須注意的是本發明之技術特徵並非在於限制光轉換粒子之特定材料的應用。舉例而言，所述光轉換粒子也可以是螢光粉粒子與量子點的組合。The above tables (2) and (4) only list exemplary materials of the light conversion particles, but it should be noted that the technical features of the present invention are not limited to the application of specific materials of the light conversion particles. For example, the light conversion particles may also be a combination of phosphor particles and quantum dots.
第二實施例Second embodiment
請參閱圖7，係顯示本發明之晶片封裝級發光二極體元件之第二實施例的側剖視圖。比較圖7與圖4可以得知，本發明之晶片封裝級發光二極體元件1的第二實施例係進一步包括：覆於該透光聚合物層13之上的一保護層14。於製程上，係可以利用矽膠製成所述的保護層14。當然，也可以參考圖6，於圖7所示的晶片封裝級發光二極體元件1的結構中增加緩衝層BF之設計。Please refer to FIG. 7, which is a side cross-sectional view showing a second embodiment of a chip package-level light emitting diode device according to the present invention. Comparing FIG. 7 with FIG. 4, it can be known that the second embodiment of the chip package-level light-emitting diode element 1 of the present invention further includes: a protective layer 14 overlying the light-transmitting polymer layer 13. In the manufacturing process, the protective layer 14 can be made of silicon rubber. Of course, you can also refer to FIG. 6 to add a buffer layer BF to the structure of the chip package-level light-emitting diode element 1 shown in FIG. 7.
第三實施例Third embodiment
請參閱圖8，係顯示本發明之晶片封裝級發光二極體元件之第三實施例的側剖視圖。本發明之晶片封裝級發光二極體元件1的第三實施例係：一LED晶粒11、包圍該LED晶粒11的側面的一側保護層15、形成該LED晶粒11之上與該側保護層15之上的一透光導熱層12、以及形成於該透光導熱層12之上的一透光聚合物層13。於製程上，可使用TiO x(1.5＜x＜2)、ZnO、SnO 2、TiO x-SiO 2(1.5＜x≤2)、或TiO xN 2-x(1＜x＜2)製成所謂的側保護層15。當然，也可以參考圖6，於圖8所示的晶片封裝級發光二極體元件1的結構中增加緩衝層BF之設計。 Please refer to FIG. 8, which is a side cross-sectional view showing a third embodiment of a chip package-level light emitting diode device according to the present invention. The third embodiment of the chip package-level light-emitting diode element 1 of the present invention is: an LED die 11, a side protective layer 15 surrounding the side of the LED die 11, and the LED die 11 and the A light-transmitting thermally conductive layer 12 on the side protective layer 15 and a light-transmitting polymer layer 13 formed on the light-transmitting thermally conductive layer 12. On the manufacturing process, it can be made of TiO x (1.5 <x <2), ZnO, SnO 2 , TiO x -SiO 2 (1.5 <x≤2), or TiO x N 2-x (1 <x <2) So-called side protective layer 15. Of course, you can also refer to FIG. 6 to add a buffer layer BF to the structure of the chip package-level light-emitting diode element 1 shown in FIG. 8.
如此，上述係已完整且清楚地說明本發明之晶片封裝級發光二極體元件的所有實施例；並且，經由上述可知本發明係具有下列之優點：In this way, the above is a complete and clear description of all the embodiments of the chip package-level light emitting diode device of the present invention; and from the above, it is known that the present invention has the following advantages:
(1)如圖1、圖2、與圖3所示，習知技術係利用晶片封裝級封裝(CSP)技術直接於設置於基板2’之上的至少一LED晶粒11’覆上光轉換膜12’，獲得所謂的晶片封裝級LED電子元件1’。然而，由於光轉換膜12’直接接觸該LED晶粒11’，因此在長期使用晶片封裝級LED電子元件1’之後，光轉換膜12’之中的透光聚合物會產生黃化現象。有鑑於此，本發明係以一LED晶粒11、覆於該LED晶粒11之上的一透光導熱層12、以及覆於該透光導熱層12之上的一透光聚合物層13構成新式的晶片封裝級發光二極體元件1。根據本發明之設計，於該LED晶粒11發光時，所述透光導熱層12會透過熱傳導而使傳入該透光聚合物層13的熱均勻分布；同時，該透光導熱層12也會透過熱傳導達成對該LED晶粒11的一熱排除功效。顯然地，在控制傳入該透光聚合物層13的熱能夠均勻分布的情況下，可以避免透光聚合物層13因為熱於內部的某一處過度集中而導致該處發生黃化現象。同理，在晶片封裝級發光二極體元件1長期使用的情況下，熱排除功效有助於延緩或防止該透光聚合物層13發生黃化現象。(1) As shown in FIG. 1, FIG. 2, and FIG. 3, the conventional technology uses a chip package level package (CSP) technology to directly cover at least one LED die 11 'disposed on the substrate 2' with light conversion. The film 12 'obtains a so-called wafer-package-level LED electronic component 1'. However, since the light conversion film 12 'directly contacts the LED die 11', after long-term use of the chip-package-level LED electronic component 1 ', the light-transmitting polymer in the light conversion film 12' may cause yellowing. In view of this, the present invention is based on an LED die 11, a light-transmitting heat-conducting layer 12 overlying the LED die 11, and a light-transmitting polymer layer 13 overlying the light-transmitting heat-conducting layer 12. Constructs a new chip package-level light-emitting diode element 1. According to the design of the present invention, when the LED die 11 emits light, the light-transmitting heat-conducting layer 12 uniformly distributes the heat introduced into the light-transmitting polymer layer 13 through heat conduction; meanwhile, the light-transmitting heat-conducting layer 12 also A heat removal effect on the LED die 11 is achieved through thermal conduction. Obviously, under the condition that the heat introduced into the light-transmitting polymer layer 13 can be uniformly distributed, the yellowing phenomenon of the light-transmitting polymer layer 13 due to excessive concentration of heat in the interior can be avoided. Similarly, in a case where the chip package-level light-emitting diode element 1 is used for a long period of time, the heat removal effect helps to delay or prevent the yellowing phenomenon of the light-transmitting polymer layer 13.
必須加以強調的是，上述之詳細說明係針對本發明可行實施例之具體說明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離本發明技藝精神所為之等效實施或變更，均應包含於本案之專利範圍中。It must be emphasized that the above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or change without departing from the technical spirit of the present invention, All should be included in the patent scope of this case.
＜本發明＞<Invention>
1‧‧‧晶片封裝級發光二極體元件1‧‧‧ Wafer packaged light emitting diode device
11‧‧‧LED晶粒11‧‧‧LED die
12‧‧‧透光導熱層12‧‧‧Light-transmitting heat-conducting layer
13‧‧‧透光聚合物層13‧‧‧light-transmitting polymer layer
2‧‧‧基板2‧‧‧ substrate
111‧‧‧電極111‧‧‧ electrode
21‧‧‧電性連接墊21‧‧‧electrical connection pad
BF‧‧‧緩衝層BF‧‧‧Buffer layer
14‧‧‧保護層14‧‧‧ protective layer
15‧‧‧側保護層15‧‧‧side protective layer
＜習知＞＜ Learning ＞
1’‧‧‧晶片封裝級LED電子元件1’‧‧‧ Wafer-package-level LED electronic components
11’‧‧‧LED晶粒11’‧‧‧LED die
12’‧‧‧光轉換膜12’‧‧‧light conversion film
111’‧‧‧電極111’‧‧‧ electrode
2’‧‧‧基板2’‧‧‧ substrate
13’‧‧‧透明矽膠13’‧‧‧Transparent Silicone
14’‧‧‧二氧化鈦保護層14’‧‧‧Titanium dioxide protective layer
圖1係顯示習知的晶片封裝級LED電子元件的第一架構的側面剖視圖； 圖2係顯示習知的晶片封裝級LED電子元件的第二架構的側面剖視圖； 圖3係顯示習知的晶片封裝級LED電子元件的第三架構的側面剖視圖； 圖4係顯示本發明之一種晶片封裝級發光二極體元件之第一實施例的第一側剖視圖； 圖5係顯示本發明之晶片封裝級發光二極體元件的應用例的立體圖； 圖6係顯示本發明之晶片封裝級發光二極體元件之第一實施例的第二側剖視圖； 圖7係顯示本發明之晶片封裝級發光二極體元件之第二實施例的側剖視圖；以及 圖8係顯示本發明之晶片封裝級發光二極體元件之第三實施例的側剖視圖。1 is a side cross-sectional view showing a first architecture of a conventional chip-package-level LED electronic component; FIG. 2 is a side cross-sectional view showing a second architecture of a conventional chip-package-level LED electronic component; A side cross-sectional view of a third structure of a package-level LED electronic component; FIG. 4 is a first side cross-sectional view showing a first embodiment of a chip package-level light-emitting diode device of the present invention; FIG. 5 is a view showing a chip-package level of the present invention A perspective view of an application example of a light-emitting diode element; FIG. 6 is a second side cross-sectional view showing a first embodiment of a wafer-packaged light-emitting diode element of the present invention; FIG. 7 is a view showing a wafer-packaged light-emitting diode of the present invention; A side cross-sectional view of a second embodiment of a body element; and FIG. 8 is a side cross-sectional view showing a third embodiment of a wafer-package-level light-emitting diode element of the present invention.
Claims (18)
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| US20100193806A1 (en) * | 2009-02-02 | 2010-08-05 | Jinseob Byun | Light Emitting Diode Unit, Display Apparatus Having the Same and Manufacturing Method of the Same |
| US20110001157A1 (en) * | 2008-01-28 | 2011-01-06 | Photonstar Led Limited | Light emitting module with optically-transparent thermally-conductive element |
| US20120025242A1 (en) * | 2010-07-30 | 2012-02-02 | Apt Electronics Ltd. | Surface mounted led structure and packaging method of integrating functional circuits on a silicon |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20110001157A1 (en) * | 2008-01-28 | 2011-01-06 | Photonstar Led Limited | Light emitting module with optically-transparent thermally-conductive element |
| US20100193806A1 (en) * | 2009-02-02 | 2010-08-05 | Jinseob Byun | Light Emitting Diode Unit, Display Apparatus Having the Same and Manufacturing Method of the Same |
| US20120025242A1 (en) * | 2010-07-30 | 2012-02-02 | Apt Electronics Ltd. | Surface mounted led structure and packaging method of integrating functional circuits on a silicon |
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