TWI676229B - Emi shielding apparatus and method for semiconductor chip - Google Patents
Emi shielding apparatus and method for semiconductor chip Download PDFInfo
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- TWI676229B TWI676229B TW107108721A TW107108721A TWI676229B TW I676229 B TWI676229 B TW I676229B TW 107108721 A TW107108721 A TW 107108721A TW 107108721 A TW107108721 A TW 107108721A TW I676229 B TWI676229 B TW I676229B
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- wave shielding
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000203 mixture Substances 0.000 claims abstract description 76
- 230000000873 masking effect Effects 0.000 claims abstract description 69
- 239000007921 spray Substances 0.000 claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 50
- 238000000576 coating method Methods 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000004381 surface treatment Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 112
- 235000012431 wafers Nutrition 0.000 description 100
- 238000010586 diagram Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000032365 Electromagnetic interference Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/76—Apparatus for connecting with build-up interconnects
- H01L2224/7615—Means for depositing
- H01L2224/76151—Means for direct writing
- H01L2224/76155—Jetting means, e.g. ink jet
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
本發明描述一種半導體晶片的電磁波遮罩膜的形成裝置及方法。本發明的半導體晶片的電磁波遮罩膜的形成方法的特徵在於，包括：上表面塗覆步驟，用於通過噴氣式噴射方法對半導體晶片的上表面塗覆包括導電顆粒的電磁波遮罩膜組合物；側面塗覆步驟，用於對半導體晶片的側面塗覆包括導電顆粒的電磁波遮罩膜組合物；及固化步驟，用於對塗覆在半導體晶片表面的電磁波遮罩膜組合物進行固化。由此，能夠通過簡單及經濟的手段來形成具有優異性能的半導體晶片的電磁波遮罩膜。The invention describes a device and method for forming an electromagnetic wave shielding film of a semiconductor wafer. The method for forming an electromagnetic wave masking film of a semiconductor wafer according to the present invention includes an upper surface coating step for coating an upper surface of the semiconductor wafer with an electromagnetic wave masking film composition including conductive particles by a jet spray method. A side coating step for coating the side of the semiconductor wafer with an electromagnetic wave masking film composition including conductive particles; and a curing step for curing the electromagnetic wave masking film composition coated on the surface of the semiconductor wafer. Thereby, an electromagnetic wave shielding film of a semiconductor wafer having excellent performance can be formed by a simple and economical means.
Description
本發明描述一種半導體晶片的電磁波遮罩膜的形成裝置及方法，更為詳細地，描述一種能夠通過比較簡單的製程來均勻地形成電磁波遮罩膜的半導體晶片的電磁波遮罩膜的形成裝置及方法。The present invention describes a device and method for forming an electromagnetic wave shielding film for a semiconductor wafer. In more detail, it describes a device and a method for forming an electromagnetic wave shielding film for a semiconductor wafer that can uniformly form the electromagnetic wave shielding film through a relatively simple process. method.
半導體晶片朝向小型化和高積體化的方向不斷發展，隨之有必要消除積體後電子設備部件之間的電磁波干擾（EMI；Electro Magnetic Interference）。Semiconductor wafers continue to develop in the direction of miniaturization and high integration, and it is necessary to eliminate electromagnetic wave interference (EMI; Electro Magnetic Interference) between electronic device components after integration.
為了消除對半導體晶片的電磁波干擾，使用電磁波遮罩膜的形成方法，所述電磁波遮罩膜的形成方法中電磁波遮罩膜包覆半導體並且與接地裝置相接。以往為了形成電磁波遮罩膜採用了濺射（sputtering）方法或噴霧式塗覆（spray coating）方法。In order to eliminate electromagnetic wave interference to the semiconductor wafer, a method of forming an electromagnetic wave masking film is used. In the method of forming the electromagnetic wave masking film, the electromagnetic wave masking film covers the semiconductor and is connected to the grounding device. Conventionally, a sputtering method or a spray coating method has been used to form an electromagnetic wave shielding film.
但是，濺射方法在真空氛圍中進行，因此需要昂貴的設備，此外噴霧式塗覆方法具有難以均勻地形成電磁波遮罩膜厚度的問題。However, since the sputtering method is performed in a vacuum atmosphere, expensive equipment is required, and the spray coating method has a problem that it is difficult to uniformly form the thickness of the electromagnetic wave shielding film.
專利文獻1：KR10-1662068 B1Patent Document 1: KR10-1662068 B1
因此，本發明係為了解決如上所述之以往問題而提出者，其目的是提供一種半導體晶片的電磁波遮罩膜的形成裝置及方法，所述半導體晶片的電磁波遮罩膜的形成裝置及方法能夠通過簡單及經濟的手段來形成半導體晶片的電磁波遮罩膜。Therefore, the present invention has been made in order to solve the conventional problems described above, and an object thereof is to provide an apparatus and method for forming an electromagnetic wave shielding film of a semiconductor wafer, which can form the apparatus and method for an electromagnetic wave shielding film of the semiconductor wafer. The electromagnetic wave shielding film of a semiconductor wafer is formed by a simple and economical method.
此外，提供一種半導體晶片的電磁波遮罩膜的形成裝置及方法，所述半導體晶片的電磁波遮罩膜的形成裝置及方法能夠形成具有優異性能的電磁波遮罩膜。In addition, an apparatus and method for forming an electromagnetic wave shielding film of a semiconductor wafer are provided. The apparatus and method for forming an electromagnetic wave shielding film of the semiconductor wafer can form an electromagnetic wave shielding film having excellent performance.
所述目的通過本發明的半導體晶片的電磁波遮罩膜的形成裝置來實現，所述半導體晶片的電磁波遮罩膜的形成裝置的特徵在於，包括：輸送機，用於在上表面放置半導體晶片；第一噴射頭，用於通過噴氣式噴射方法從所述輸送機的上部對放置在所述輸送機的上表面的半導體晶片的上表面塗覆電磁波遮罩膜組合物；第二噴射頭，用於從所述輸送機的上部對放置在所述輸送機的上表面的半導體晶片的側面塗覆電磁波遮罩膜組合物；及固化機，用於從所述輸送機的上部對塗覆於放置在所述輸送機的上表面的半導體晶片的上表面的電磁波遮罩膜組合物進行固化。The object is achieved by a device for forming an electromagnetic wave masking film of a semiconductor wafer according to the present invention. The device for forming an electromagnetic wave masking film of a semiconductor wafer is characterized by comprising: a conveyor for placing a semiconductor wafer on an upper surface; A first spray head for coating an upper surface of a semiconductor wafer placed on an upper surface of the conveyor with an electromagnetic wave masking film composition from an upper portion of the conveyor by a jet spray method; The side of the semiconductor wafer placed on the upper surface of the conveyor is coated with an electromagnetic wave masking film composition from the upper portion of the conveyor; and a curing machine is used to coat the semiconductor wafer from the upper portion of the conveyor. The electromagnetic wave shielding film composition on the upper surface of the semiconductor wafer on the upper surface of the conveyor is cured.
所述第二噴射頭可配置為與所述輸送機的上表面構成傾斜。The second spray head may be configured to be inclined with the upper surface of the conveyor.
所述輸送機可具有方向轉換部，該方向轉換部的上表面傾斜形成，且所述第二噴射頭配置在所述方向轉換部的切線方向上。The conveyor may have a direction conversion section, and an upper surface of the direction conversion section is formed obliquely, and the second spray head is disposed in a tangential direction of the direction conversion section.
所述第二噴射頭可通過噴氣式噴射方法或噴霧式噴射方法來塗覆電磁波遮罩膜組合物。The second spray head may apply the electromagnetic wave masking film composition by a jet spray method or a spray spray method.
所述第二噴射頭可形成為朝向半導體晶片的各側面，或朝向半導體晶片的彼此面對的兩個側方邊緣。The second spray head may be formed toward each side of the semiconductor wafer, or toward two side edges of the semiconductor wafer that face each other.
優選在所述第一噴射頭和第二噴射頭之間還包括預固化機，所述預固化機用於對塗覆於放置在輸送機上表面的半導體晶片表面的電磁波遮罩膜組合物進行預固化。Preferably, a pre-curing machine is further included between the first jet head and the second jet head, and the pre-curing machine is used to perform an electromagnetic wave masking film composition coated on the surface of the semiconductor wafer placed on the upper surface of the conveyor. Pre-cured.
優選所述輸送機具有黏合性。Preferably, the conveyor is adhesive.
所述目的通過本發明的半導體晶片的電磁波遮罩膜的形成方法來實現，所述半導體晶片的電磁波遮罩膜的形成方法的特徵在於，包括：上表面塗覆步驟，用於通過噴氣式噴射方法對半導體晶片的上表面塗覆包括導電顆粒的電磁波遮罩膜組合物；側面塗覆步驟，用於對半導體晶片的側面塗覆包括導電顆粒的電磁波遮罩膜組合物；及固化步驟，用於對塗覆在半導體晶片表面的電磁波遮罩膜組合物進行固化。The object is achieved by a method for forming an electromagnetic wave masking film of a semiconductor wafer according to the present invention. The method for forming an electromagnetic wave masking film of a semiconductor wafer is characterized in that it includes: an upper surface coating step for spraying by an air jet. A method of coating an upper surface of a semiconductor wafer with an electromagnetic wave masking film composition including conductive particles; a side coating step for coating the side of the semiconductor wafer with an electromagnetic wave masking film composition including conductive particles; and a curing step, The present invention is used for curing an electromagnetic wave shielding film composition coated on the surface of a semiconductor wafer.
優選在所述上表面塗覆步驟之前進一步進行表面處理步驟，所述表面處理步驟用於通過等離子體處理半導體晶片的表面。It is preferable to further perform a surface treatment step before the upper surface coating step, which is used to treat the surface of the semiconductor wafer by plasma.
優選在所述上表面塗覆步驟和所述側面塗覆步驟之間進一步進行預固化步驟，所述預固化步驟用於對塗覆在半導體晶片上表面的電磁波遮罩膜組合物進行預固化。Preferably, a pre-curing step is further performed between the upper surface coating step and the side coating step, and the pre-curing step is used for pre-curing the electromagnetic wave masking film composition coated on the upper surface of the semiconductor wafer.
優選在所述上表面塗覆步驟中，對半導體晶片上表面的一部分塗覆電磁波遮罩膜組合物，其中在所述側面塗覆步驟中，對半導體晶片側面的一部分塗覆電磁波遮罩膜組合物。Preferably, in the upper surface coating step, a part of the upper surface of the semiconductor wafer is coated with an electromagnetic wave masking film composition, and in the side coating step, a part of the side surface of the semiconductor wafer is coated with an electromagnetic wave masking film combination. Thing.
本發明的半導體晶片的電磁波遮罩膜的形成裝置雖然具有簡單的結構，但能夠形成用於半導體晶片且具有優異性能的電子波遮罩膜。The apparatus for forming an electromagnetic wave shielding film of a semiconductor wafer of the present invention has a simple structure, but can form an electron wave shielding film for a semiconductor wafer and has excellent performance.
所述電磁波遮罩膜的形成裝置還易於進行電磁波遮罩膜的形成作業。The apparatus for forming an electromagnetic wave shielding film is also easy to perform an operation of forming an electromagnetic wave shielding film.
下面，參照附圖對本發明的具體實施例進行詳細說明。Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings.
本發明的半導體晶片的電磁波遮罩膜的形成裝置1包括輸送機10、第一噴射頭20、第二噴射頭30及固化機40。圖1中揭露有關於本發明的電磁波遮罩膜的形成裝置1的說明圖。The apparatus 1 for forming an electromagnetic wave shielding film of a semiconductor wafer according to the present invention includes a conveyor 10, a first spray head 20, a second spray head 30, and a curing machine 40. FIG. 1 is an explanatory diagram of an apparatus 1 for forming an electromagnetic wave shielding film according to the present invention.
本發明的電磁波遮罩膜的形成裝置1大致上通過對半導體晶片2的上表面2a進行塗覆的步驟、對半導體晶片2的側面2b進行塗覆的步驟、及對塗覆在半導體晶片2的表面的電磁波遮罩膜組合物進行固化的步驟來在半導體晶片2上形成電磁波遮罩膜。The apparatus 1 for forming an electromagnetic wave masking film of the present invention generally includes a step of coating the upper surface 2 a of the semiconductor wafer 2, a step of coating the side surface 2 b of the semiconductor wafer 2, and a step of coating the semiconductor wafer 2. The surface electromagnetic wave shielding film composition is cured to form an electromagnetic wave shielding film on the semiconductor wafer 2.
所述輸送機10用於在其上表面放置半導體晶片2的裝置，通過使半導體晶片2移動，來使半導體晶片2能夠經過形成電磁波遮罩膜的每個過程。The conveyor 10 is a device for placing a semiconductor wafer 2 on an upper surface thereof. By moving the semiconductor wafer 2, the semiconductor wafer 2 can pass through each process of forming an electromagnetic wave shielding film.
第一噴射頭20在輸送機10的上部隔著間隔配置，其起到對放置在輸送機10的上表面的半導體晶片2的上表面2a塗覆電磁波遮罩膜組合物的作用。The first spray head 20 is disposed at an interval on the upper portion of the conveyor 10, and functions to apply the electromagnetic wave shielding film composition to the upper surface 2 a of the semiconductor wafer 2 placed on the upper surface of the conveyor 10.
請參考，電磁波遮罩膜組合物應能夠通過接地的方法阻斷電磁波對半導體晶片2的影響，因此可為包括如銅、鐵、銀、金、鋁、鎳或鋅的導電顆粒的金屬油墨或無顆粒金屬油墨。Please refer to that the electromagnetic wave masking film composition should be able to block the influence of electromagnetic waves on the semiconductor wafer 2 by grounding, so it can be a metallic ink including conductive particles such as copper, iron, silver, gold, aluminum, nickel or zinc, or Particle-free metallic ink.
電磁波遮罩膜組合物可根據需要包括溶劑、穩定劑、分散劑、黏合劑樹脂（binder resin）、交聯劑、還原劑、表面活性劑（surfactant）、潤濕劑（wetting agent）、觸變劑（thixotropic agent）或流平劑（leveling agent）、增稠劑、消泡劑等的添加劑。The electromagnetic wave masking film composition may include a solvent, a stabilizer, a dispersant, a binder resin, a cross-linking agent, a reducing agent, a surfactant, a wetting agent, and a thixotropic agent as needed. Additives such as thixotropic agent or leveling agent, thickener, defoamer, etc.
第一噴射頭20通過噴氣式噴射方法來塗覆電磁波遮罩膜組合物。在採用噴氣式噴射方法時，能夠在準確的位置上按準確的量噴射液狀物質，因此當通過噴氣式噴射方法塗覆電磁波遮罩膜組合物時，能夠精密地控制電磁波遮罩膜組合物的塗覆厚度及塗覆位置。The first spray head 20 applies an electromagnetic wave masking film composition by a jet spray method. When the jet spray method is used, the liquid substance can be sprayed in an accurate amount at an accurate position. Therefore, when the electromagnetic wave mask film composition is applied by the jet spray method, the electromagnetic wave mask film composition can be precisely controlled. Coating thickness and coating position.
當電磁波遮罩膜組合物的黏度過低或過高時，或者表面張力過高時，不能滿足第一噴射頭20所需的搖變性，從而難以進行穩定的噴射。因此，電磁波遮罩膜組合物的黏度可為1~50,000 cPs，更加優選地可為5~400 cPs。此外，表面張力最大可為35 dyn/cm，更加優選地可為30 dyn/cm以下。When the viscosity of the electromagnetic wave masking film composition is too low or too high, or when the surface tension is too high, the shake deflection required by the first spray head 20 cannot be satisfied, and it is difficult to perform stable spraying. Therefore, the viscosity of the electromagnetic wave masking film composition may be 1 to 50,000 cPs, and more preferably 5 to 400 cPs. In addition, the surface tension may be 35 dyn / cm at a maximum, and more preferably 30 dyn / cm or less.
將第一噴射頭20的溫度設定為1~50℃，更加優選設定為25~35℃，從而提高電磁波遮罩膜組合物的噴射穩定性。The temperature of the first spray head 20 is set to 1 to 50 ° C, and more preferably 25 to 35 ° C, so as to improve the spray stability of the electromagnetic wave masking film composition.
與所述第一噴射頭20同樣地，第二噴射頭30在輸送機10的上部隔著間隔配置，其用於對放置在輸送機10的上表面的半導體晶片2的側面2b塗覆電磁波遮罩膜組合物。Similar to the first spray head 20, the second spray head 30 is disposed at an interval on the upper portion of the conveyor 10, and is used to apply electromagnetic wave shielding to the side surface 2b of the semiconductor wafer 2 placed on the upper surface of the conveyor 10. Cover film composition.
所述第二噴射頭30可通過噴氣式噴射方法或噴霧式噴射方法來塗覆電磁波遮罩膜組合物。當通過噴氣式噴射方法塗覆電磁波遮罩膜組合物時，如上所述，能夠精密地控制塗覆電磁波遮罩膜組合物的厚度及塗覆位置。半導體晶片2的側面2b具有比上表面2a的面積小的面積，因此在通過噴霧式噴射方法對半導體晶片2的側面2b塗覆電磁波遮罩膜組合物時，也能形成充分均質厚度的電磁波遮罩膜。The second spray head 30 may apply the electromagnetic wave masking film composition by a jet spray method or a spray spray method. When the electromagnetic wave masking film composition is applied by a jet spray method, as described above, the thickness and application position of the electromagnetic wave masking film composition can be precisely controlled. The side surface 2b of the semiconductor wafer 2 has a smaller area than the area of the upper surface 2a. Therefore, when the side surface 2b of the semiconductor wafer 2 is coated with the electromagnetic wave shielding film composition by a spraying method, an electromagnetic wave shielding having a sufficiently uniform thickness can be formed. Cover film.
當電磁波遮罩膜組合物的黏度過低時，會增加電磁波遮罩膜組合物的流動性，從而有可能難以在半導體晶片的側面形成均勻的電磁波遮罩膜，因此通過第二噴射頭30噴射的電磁波遮罩膜組合物避免具有過低的黏度。When the viscosity of the electromagnetic wave masking film composition is too low, the fluidity of the electromagnetic wave masking film composition is increased, and it may be difficult to form a uniform electromagnetic wave masking film on the side of the semiconductor wafer. Therefore, it is sprayed by the second spray head 30. The electromagnetic wave shielding film composition is prevented from having an excessively low viscosity.
固化機40位於輸送機10的上部，用於對塗覆於放置在輸送機10的上表面的半導體晶片2的上表面2a和側面2b的液狀電磁波遮罩膜組合物進行加熱並固化。由此，能夠防止電磁波遮罩膜組合物在半導體晶片2的表面上流動，並且縮短形成電磁波遮罩膜所需的時間。The curing machine 40 is located at the upper part of the conveyor 10 and is used to heat and cure the liquid electromagnetic wave masking film composition applied to the upper surface 2a and the side surface 2b of the semiconductor wafer 2 placed on the upper surface of the conveyor 10. This makes it possible to prevent the electromagnetic wave masking film composition from flowing on the surface of the semiconductor wafer 2 and shorten the time required to form the electromagnetic wave masking film.
通過固化機40進行的作業優選在140~160℃溫度中進行4~6分鐘。The operation performed by the curing machine 40 is preferably performed at a temperature of 140 to 160 ° C. for 4 to 6 minutes.
如圖1所示，所述第二噴射頭30可配置為與輸送機10的上表面構成傾斜。As shown in FIG. 1, the second spray head 30 may be configured to be inclined with the upper surface of the conveyor 10.
這種第二噴射頭30還與垂直放置的半導體晶片2的側面2b構成傾斜，從而能夠易於對半導體晶片2的側面2b塗覆電磁波遮罩膜組合物。Such a second head 30 also inclines with the side surface 2b of the semiconductor wafer 2 placed vertically, so that the side surface 2b of the semiconductor wafer 2 can be easily coated with an electromagnetic wave shielding film composition.
所述第二噴射頭30還能夠在與放置在輸送機10的上表面的半導體晶片2的側面2b構成垂直的方向上塗覆電磁波遮罩膜組合物。即，如圖2所示，設置有方向轉換部11，所述方向轉換部11形成為輸送機10的一部分區間沿輥的外周面移動，從而使輸送機10的上表面中的一部分傾斜形成，並且在所述方向轉換部11的切線方向上配置第二噴射頭30，從而能夠直接在半導體晶片2的側面2b上塗覆電磁波遮罩膜組合物。The second spray head 30 can also coat the electromagnetic wave shielding film composition in a direction perpendicular to the side surface 2 b of the semiconductor wafer 2 placed on the upper surface of the conveyor 10. That is, as shown in FIG. 2, a direction conversion section 11 is provided, and the direction conversion section 11 is formed such that a part of the conveyor 10 moves along the outer peripheral surface of the roller so that a part of the upper surface of the conveyor 10 is formed obliquely. In addition, the second spray head 30 is arranged in the tangential direction of the direction conversion section 11, so that the electromagnetic wave masking film composition can be directly coated on the side surface 2 b of the semiconductor wafer 2.
在與半導體晶片2的側面2b構成直角的方向上塗覆的電磁波遮罩膜組合物能夠容易調節所要塗覆的厚度和位置。The electromagnetic wave masking film composition applied in a direction that forms a right angle with the side surface 2b of the semiconductor wafer 2 can easily adjust the thickness and position to be applied.
當輸送機10僅具有直線路徑時，若要在與半導體晶片2的側面2b構成直角的方向上塗覆電磁波遮罩膜組合物，則有可能會使第二噴射頭30和輸送機10的上表面相互干擾，但當輸送機10具有方向轉換部11時，即便第二噴射頭30配置在與半導體晶片2的側面2b構成直角的方向上，由於方向轉換部11部分的傾斜，輸送機10的上表面和第二噴射頭30不會相互干擾。When the conveyor 10 has only a straight path, if the electromagnetic wave masking film composition is to be coated in a direction perpendicular to the side surface 2 b of the semiconductor wafer 2, the second jet head 30 and the upper surface of the conveyor 10 may be caused. They interfere with each other, but when the conveyor 10 has a direction changing section 11, even if the second spray head 30 is disposed in a direction that forms a right angle with the side surface 2b of the semiconductor wafer 2, the upper part of the conveyor 10 is inclined due to the inclination of the direction changing section 11. The surface and the second head 30 do not interfere with each other.
輸送機10可具有黏合性。The conveyor 10 may have adhesiveness.
此時，當通過第一噴射頭20或第二噴射頭30來對半導體晶片2塗覆電磁波遮罩膜組合物時，能夠防止在輸送機10上的半導體晶片2的位置變化，因此能夠提高塗覆的準確性，尤其能夠防止半導體晶片2從傾斜的方向轉換部11中脫離。At this time, when the semiconductor wafer 2 is coated with the electromagnetic wave masking film composition by the first jetting head 20 or the second jetting head 30, the position change of the semiconductor wafer 2 on the conveyor 10 can be prevented, and thus the coating can be improved. The accuracy of the coating can prevent the semiconductor wafer 2 from being detached from the tilted direction changing section 11.
如圖3（a）所示，所述第二噴射頭30可形成為朝向半導體晶片2的各側面2b。請參考，圖3（a）為從上部觀察半導體晶片2的形象。As shown in FIG. 3 (a), the second head 30 may be formed to face each side 2 b of the semiconductor wafer 2. Please refer to FIG. 3 (a), which is an image of the semiconductor wafer 2 as viewed from above.
一般來講，半導體晶片2由扁平的六面體形狀來構成，因此當將第二噴射頭30形成為朝向半導體晶片2的各側面2b，並沿直角方向對半導體晶片2的各側面2b塗覆電磁波遮罩膜組合物時，能夠在半導體晶片2的所有側面2b上容易調節塗覆位置和厚度，並且能夠縮短塗覆時間。Generally, the semiconductor wafer 2 has a flat hexahedral shape. Therefore, when the second head 30 is formed to face each side 2b of the semiconductor wafer 2 and each side 2b of the semiconductor wafer 2 is coated in a right-angle direction. When the electromagnetic wave masking film composition is used, the coating position and thickness can be easily adjusted on all sides 2b of the semiconductor wafer 2, and the coating time can be shortened.
如圖3（b）所示，所述第二噴射頭30也可形成為朝向半導體晶片2的彼此面對的兩個側方邊緣2c。As shown in FIG. 3 (b), the second head 30 may be formed to face the two side edges 2 c of the semiconductor wafer 2 facing each other.
此時，能夠通過相對較少數量的第二噴射頭30來對半導體晶片2的所有側面2b塗覆電磁波遮罩膜組合物。At this time, it is possible to apply the electromagnetic wave shielding film composition to all the side faces 2 b of the semiconductor wafer 2 by a relatively small number of the second heads 30.
當第二噴射頭30朝向半導體晶片2的側方邊緣2c時，會沿著與半導體晶片2的側面2b傾斜的方向塗覆電磁波遮罩膜組合物，電磁波遮罩膜組合物在半導體晶片2的側面2b上擴展到較寬範圍，因此與第二噴射頭30形成為朝向半導體晶片2的各側面2b的情況相比，優選多次塗覆電磁波遮罩膜組合物。When the second spray head 30 faces the side edge 2 c of the semiconductor wafer 2, the electromagnetic wave shielding film composition is applied in a direction inclined with the side surface 2 b of the semiconductor wafer 2. The electromagnetic wave shielding film composition is applied to the semiconductor wafer 2. Since the side surface 2b is extended to a wide range, it is preferable to apply the electromagnetic wave shielding film composition multiple times as compared with a case where the second head 30 is formed to face each side surface 2b of the semiconductor wafer 2.
在第一噴射頭20和第二噴射頭30之間可進一步具有預固化機50。A pre-curing machine 50 may be further provided between the first spray head 20 and the second spray head 30.
所述預固化機50起到經過第一噴射頭20對塗覆在半導體晶片2的上表面2a的電磁波遮罩膜組合物進行預固化的作用。The pre-curing machine 50 performs a role of pre-curing the electromagnetic wave masking film composition coated on the upper surface 2 a of the semiconductor wafer 2 through the first spray head 20.
預固化機50可由加熱器來構成並對電磁波遮罩膜組合物進行熱固化，或由紫外線（UV；Ultra Violet）照射器來構成並對電磁波遮罩膜組合物進行紫外線固化。The pre-curing machine 50 may be composed of a heater and thermally cure the electromagnetic wave masking film composition, or may be composed of an ultraviolet (Ultra Violet) irradiator and perform ultraviolet curing of the electromagnetic wave masking film composition.
因預固化而流動性下降的電磁波遮罩膜組合物在通過第二噴射頭30進行的後續作業中不會流動，因此能夠防止因塗覆在半導體晶片2的上表面2a的電磁波遮罩膜組合物的流動而導致半導體晶片側面2b的電磁波遮罩膜的厚度不均勻。The electromagnetic wave masking film composition whose fluidity is lowered due to pre-curing does not flow in the subsequent work performed by the second spray head 30, so it is possible to prevent the combination of the electromagnetic wave masking film coated on the upper surface 2a of the semiconductor wafer 2 The flow of an object causes the thickness of the electromagnetic wave shielding film on the side surface 2b of the semiconductor wafer to be uneven.
所述預固化機50只需固化至在電磁波遮罩膜組合物中消除流動性即可，而無需完全固化電磁波遮罩膜組合物。因此與所述固化機40相比，在更低的溫度或更短的時間內固化電磁波遮罩膜用組合物。The pre-curing machine 50 only needs to be cured to eliminate fluidity in the electromagnetic wave masking film composition, and it is not necessary to completely cure the electromagnetic wave masking film composition. Therefore, compared with the curing machine 40, the composition for an electromagnetic wave shielding film is cured at a lower temperature or in a shorter time.
下面，對利用上述半導體晶片的電磁波遮罩膜的形成裝置1在半導體晶片上形成電磁波遮罩膜的方法進行說明。在對本發明的半導體晶片的電磁波遮罩膜的形成方法進行說明時，對在說明半導體晶片的電磁波遮罩膜的形成裝置1時所提到的部分不再詳細說明。Next, a method for forming an electromagnetic wave shielding film on a semiconductor wafer by using the above-described apparatus 1 for forming an electromagnetic wave shielding film on a semiconductor wafer will be described. When describing the method for forming the electromagnetic wave shielding film of the semiconductor wafer of the present invention, the parts mentioned in describing the apparatus 1 for forming the electromagnetic wave shielding film of the semiconductor wafer will not be described in detail.
圖4為本發明的半導體晶片的電磁波遮罩膜的形成方法的順序圖。本發明的半導體晶片的電磁波遮罩膜的形成方法包括上表面塗覆步驟S20、側面塗覆步驟S40及固化步驟S50這三大部分。4 is a sequence diagram of a method of forming an electromagnetic wave shielding film of a semiconductor wafer according to the present invention. The method for forming an electromagnetic wave shielding film of a semiconductor wafer of the present invention includes three major parts: an upper surface coating step S20, a side surface coating step S40, and a curing step S50.
在上表面塗覆步驟S20中，利用第一噴射頭20對半導體晶片2的上表面2a塗覆包括導電顆粒的電磁波遮罩膜組合物。第一噴射頭20通過噴氣式噴射方法來塗覆電磁波遮罩膜組合物，因此能夠精密地調節塗覆厚度和位置。In the upper surface coating step S20, the upper surface 2a of the semiconductor wafer 2 is coated with an electromagnetic wave masking film composition including conductive particles using the first spray head 20. Since the first spray head 20 applies the electromagnetic wave masking film composition by a jet spray method, it is possible to precisely adjust the coating thickness and position.
在側面塗覆步驟S40中，對半導體晶片2的側面2b塗覆電磁波遮罩膜組合物。第二噴射頭30通過噴氣式噴射方法或噴霧式噴射方法來塗覆電磁波遮罩膜組合物。In the side surface coating step S40, the side surface 2b of the semiconductor wafer 2 is coated with an electromagnetic wave shielding film composition. The second spray head 30 applies an electromagnetic wave masking film composition by a jet spray method or a spray spray method.
在固化步驟S50中，對塗覆在半導體晶片2的表面的電磁波遮罩膜組合物進行固化。In the curing step S50, the electromagnetic wave masking film composition coated on the surface of the semiconductor wafer 2 is cured.
當應用這種本發明的半導體晶片2的電磁波遮罩膜的形成方法時，能夠通過具有簡單結構的裝置來形成均勻厚度的電磁波遮罩膜，因此能夠製作優異性能的半導體晶片2，且能夠縮短在形成電磁波遮罩膜中所需的時間。When the method for forming an electromagnetic wave masking film of the semiconductor wafer 2 of the present invention is applied, a uniform thickness electromagnetic wave masking film can be formed by a device having a simple structure, so that the semiconductor wafer 2 having excellent performance can be manufactured and shortened. The time required to form an electromagnetic wave masking film.
在所述上表面塗覆步驟S20之前可進一步進行表面處理步驟S10。A surface treatment step S10 may be further performed before the upper surface coating step S20.
在表面處理步驟S10中，通過等離子體來處理半導體晶片2的表面。由此，在上表面塗覆步驟S20及側面塗覆步驟S40中會增加電磁波遮罩膜組合物對半導體晶片2表面的附著力。In the surface processing step S10, the surface of the semiconductor wafer 2 is processed by plasma. Accordingly, in the upper surface coating step S20 and the side surface coating step S40, the adhesion of the electromagnetic wave shielding film composition to the surface of the semiconductor wafer 2 is increased.
在上表面塗覆步驟S20和側面塗覆步驟S40之間可進一步進行預固化步驟S30。A pre-curing step S30 may be further performed between the upper surface coating step S20 and the side coating step S40.
在預固化步驟S30中，對塗覆在半導體晶片上表面2a的電磁波遮罩膜組合物進行預固化，從而能夠防止半導體晶片上表面2a上的電磁波遮罩膜組合物流動而影響在半導體晶片的側面2b上形成電磁波遮罩膜。In the pre-curing step S30, the electromagnetic wave masking film composition coated on the upper surface 2a of the semiconductor wafer is pre-cured, so that the electromagnetic wave masking film composition on the upper surface 2a of the semiconductor wafer can be prevented from flowing and affecting the semiconductor wafer. An electromagnetic wave shielding film is formed on the side surface 2b.
在預固化步驟S30中，可通過熱量或紫外線（UV；Ultra Violet）來對電磁波遮罩膜組合物進行固化。In the pre-curing step S30, the electromagnetic wave shielding film composition may be cured by heat or ultraviolet (UV; Ultra Violet).
在上表面塗覆步驟S20中，可對半導體晶片上表面2a的一部分塗覆電磁波遮罩膜組合物，在側面塗覆步驟S40中，可對半導體晶片側面2b的一部分塗覆電磁波遮罩膜組合物。In the upper surface coating step S20, a part of the semiconductor wafer upper surface 2a may be coated with an electromagnetic wave masking film composition, and in the side coating step S40, a part of the semiconductor wafer side surface 2b may be coated with an electromagnetic wave shielding film composition. Thing.
電磁波遮罩膜用於通過接地來阻斷電磁波對半導體晶片的影響，因此無需通過電磁波遮罩膜塗覆整個半導體晶片。因此，可以只對半導體晶片表面的一部分形成電磁波遮罩膜來阻斷對半導體晶片的電磁波的同時降低在形成電磁波遮罩膜中所需的時間和成本。The electromagnetic wave shielding film is used to block the influence of electromagnetic waves on the semiconductor wafer by grounding, so it is not necessary to coat the entire semiconductor wafer with the electromagnetic wave shielding film. Therefore, it is possible to form an electromagnetic wave shielding film on only a part of the surface of the semiconductor wafer to block electromagnetic waves to the semiconductor wafer while reducing the time and cost required to form the electromagnetic wave shielding film.
即使只在導體晶片表面的一部分上塗覆電磁波遮罩膜組合物，半導體晶片上表面2a的電磁波遮罩膜組合物和半導體晶片側面2b的電磁波遮罩膜組合物也應該彼此連接。Even if the electromagnetic wave shielding film composition is coated on only a part of the surface of the conductor wafer, the electromagnetic wave shielding film composition on the upper surface 2a of the semiconductor wafer and the electromagnetic wave shielding film composition on the semiconductor wafer side 2b should be connected to each other.
本發明的權利範圍並不限於上述實施例，在所附的申請專利範圍的範圍內可由多種形式的實施例實現。在不脫離申請專利範圍所要求保護的本發明精神的範圍內，本發明所屬技術領域的技術人員均能變形的各種範圍也屬於本發明的申請專利範圍所記載的範圍內。The scope of rights of the present invention is not limited to the above-mentioned embodiments, and may be implemented by various forms of embodiments within the scope of the scope of the attached patent application. Without departing from the spirit of the present invention as claimed in the scope of the patent application, various scopes that can be modified by those skilled in the art to which the present invention pertains also fall within the scope of the patent application scope of the present invention.
1‧‧‧半導體晶片的電磁波遮罩膜的形成裝置Device for forming electromagnetic wave shielding film of 1‧‧‧semiconductor wafer
2‧‧‧半導體晶片2‧‧‧ semiconductor wafer
2a‧‧‧上表面2a‧‧‧upper surface
2b‧‧‧側面2b‧‧‧side
2c‧‧‧側方邊緣2c‧‧‧side edge
10‧‧‧輸送機10‧‧‧ Conveyor
11‧‧‧方向轉換部11‧‧‧Direction Conversion Department
20‧‧‧第一噴射頭20‧‧‧ the first jet head
30‧‧‧第二噴射頭30‧‧‧second head
40‧‧‧固化機40‧‧‧ curing machine
50‧‧‧預固化機50‧‧‧Pre-curing machine
S10‧‧‧表面處理步驟S10‧‧‧Surface treatment steps
S20‧‧‧上表面塗覆步驟S20‧‧‧Upper surface coating step
S30‧‧‧預固化步驟S30‧‧‧Pre-curing step
S40‧‧‧側面塗覆步驟S40‧‧‧Side coating step
S50‧‧‧固化步驟S50‧‧‧Cure step
圖1為關於本發明的半導體晶片的電磁波遮罩膜的形成裝置的說明圖。 圖2為關於當所述電磁波遮罩膜的形成裝置的輸送機具有方向轉換部時的說明圖。 圖3為關於所述電磁波遮罩膜的形成裝置的第二噴射頭的配置方法的說明圖。 圖4為本發明的半導體晶片的電磁波遮罩膜的形成方法的順序圖。FIG. 1 is an explanatory diagram of an apparatus for forming an electromagnetic wave shielding film of a semiconductor wafer according to the present invention. FIG. 2 is an explanatory diagram when a conveyor of the apparatus for forming an electromagnetic wave mask film has a direction conversion section. FIG. 3 is an explanatory diagram of a method of arranging a second ejection head of the apparatus for forming an electromagnetic wave mask film. 4 is a sequence diagram of a method of forming an electromagnetic wave shielding film of a semiconductor wafer according to the present invention.
Claims (11)
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2017-0031884 | 2017-03-14 | ||
| KR20170031884 | 2017-03-14 | ||
| ??10-2017-0031884 | 2017-03-14 |
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| TWI676229B true TWI676229B (en) | 2019-11-01 |
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| TW107108721A TWI676229B (en) | 2017-03-14 | 2018-03-14 | Emi shielding apparatus and method for semiconductor chip |
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| KR (1) | KR102028027B1 (en) |
| TW (1) | TWI676229B (en) |
| WO (1) | WO2018169280A1 (en) |
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| KR102650018B1 (en) * | 2022-08-30 | 2024-03-22 | 엔트리움 주식회사 | Method of fabricating electronic device |
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| TW201350213A (en) * | 2012-06-06 | 2013-12-16 | Yong Hau Entpr Co Ltd | Casing spraying method |
| TW201546878A (en) * | 2012-11-30 | 2015-12-16 | Apic Yamada Corp | Resist film forming device, conductive film forming and circuit forming device, electromagnetic wave shield forming device, shortwave high-transmissibility insulation film forming device, bump forming device and method, wiring forming device and method |
| TW201606978A (en) * | 2014-08-01 | 2016-02-16 | 乾坤科技股份有限公司 | Semiconductor package with conformal EM shielding structure and manufacturing method of same |
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| KR100295551B1 (en) * | 1998-11-14 | 2001-07-12 | 손명호 | Conductive metal coating method and aparatus thereof |
| KR100409203B1 (en) * | 1999-12-23 | 2003-12-11 | 재단법인 포항산업과학연구원 | UV paints coating system for preventing non-cementation of UV paints |
| EP1774595A4 (en) * | 2004-06-02 | 2011-05-18 | Semiconductor Energy Lab | Laminating system |
| KR100651167B1 (en) * | 2004-12-27 | 2006-11-29 | 미래산업 주식회사 | Apparatus for a coating layer for shielding electro magnetic interference and its method |
| JP6077921B2 (en) * | 2013-04-18 | 2017-02-08 | 横浜ゴム株式会社 | Coated rubber composition for conveyor belt, laminate and conveyor belt |
| KR101479251B1 (en) * | 2014-08-07 | 2015-01-05 | (주) 씨앤아이테크놀로지 | Sputtering Apparatus for EMI shielding of Semiconductor Packages and In-line Sputtering Deposition System Having the Same |
| KR102474242B1 (en) * | 2015-01-09 | 2022-12-06 | 삼성전자주식회사 | Semiconductor Package and Manufacturing Method thereof |
| KR101662068B1 (en) | 2015-08-07 | 2016-10-04 | (주) 씨앤아이테크놀로지 | Eletro magnetic interference shielding method of semiconductor packages |
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- 2018-03-12 KR KR1020180028621A patent/KR102028027B1/en active IP Right Grant
- 2018-03-13 WO PCT/KR2018/002930 patent/WO2018169280A1/en active Application Filing
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| TW531771B (en) * | 2000-10-17 | 2003-05-11 | Nanogram Corp | Coating formation by reactive deposition |
| TW201350213A (en) * | 2012-06-06 | 2013-12-16 | Yong Hau Entpr Co Ltd | Casing spraying method |
| TW201546878A (en) * | 2012-11-30 | 2015-12-16 | Apic Yamada Corp | Resist film forming device, conductive film forming and circuit forming device, electromagnetic wave shield forming device, shortwave high-transmissibility insulation film forming device, bump forming device and method, wiring forming device and method |
| TW201606978A (en) * | 2014-08-01 | 2016-02-16 | 乾坤科技股份有限公司 | Semiconductor package with conformal EM shielding structure and manufacturing method of same |
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| Publication number | Publication date |
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| WO2018169280A1 (en) | 2018-09-20 |
| KR20180105577A (en) | 2018-09-28 |
| TW201839893A (en) | 2018-11-01 |
| KR102028027B1 (en) | 2019-10-04 |
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