TWI671804B - Heat treatment apparatus - Google Patents
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- TWI671804B TWI671804B TW106117212A TW106117212A TWI671804B TW I671804 B TWI671804 B TW I671804B TW 106117212 A TW106117212 A TW 106117212A TW 106117212 A TW106117212 A TW 106117212A TW I671804 B TWI671804 B TW I671804B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 145
- 239000000758 substrate Substances 0.000 claims abstract description 154
- 239000010453 quartz Substances 0.000 claims abstract description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000011358 absorbing material Substances 0.000 claims abstract description 47
- 230000001678 irradiating effect Effects 0.000 claims description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 152
- 229910052736 halogen Inorganic materials 0.000 abstract description 91
- 150000002367 halogens Chemical class 0.000 abstract description 91
- 238000009826 distribution Methods 0.000 abstract description 34
- 230000007423 decrease Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 149
- 238000012546 transfer Methods 0.000 description 51
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- 230000007246 mechanism Effects 0.000 description 40
- 238000012545 processing Methods 0.000 description 23
- 239000012535 impurity Substances 0.000 description 16
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 229910052724 xenon Inorganic materials 0.000 description 13
- 230000005855 radiation Effects 0.000 description 12
- 230000031700 light absorption Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
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- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
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- 238000007788 roughening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本發明的課題在於提供一種能以簡易的構成將光線照射時的基板面內的溫度分布設成均勻之熱處理裝置。 An object of the present invention is to provide a heat treatment device capable of setting a temperature distribution in a substrate surface to be uniform during light irradiation with a simple configuration.
本發明用以解決課題的手段為基板支撐銷77係由光吸收材料所形成;該基板支撐銷77係立設於石英的保持板75的上表面,用以直接地支撐半導體晶圓W;該光吸收材料係吸收從鹵素燈所照射的光線而升溫。於藉由鹵素燈進行加熱時,從鹵素燈所射出的光線係穿透保持板75且該光線的一部分係被基板支撐銷77吸收,基板支撐銷77係升溫。藉此,能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,而能將藉由鹵素燈進行加熱時的半導體晶圓W的面內溫度分布設成均勻。 The means for solving the problem in the present invention is that the substrate support pin 77 is formed of a light absorbing material; the substrate support pin 77 is erected on the upper surface of the quartz holding plate 75 to directly support the semiconductor wafer W; The light absorbing material absorbs the light radiated from the halogen lamp and heats up. When heating by a halogen lamp, the light emitted from the halogen lamp penetrates the holding plate 75 and a part of the light is absorbed by the substrate support pin 77, and the substrate support pin 77 is heated. Thereby, it is possible to suppress a decrease in temperature in the vicinity of the contact portion between the substrate support pin 77 and the semiconductor wafer W, and to make the in-plane temperature distribution of the semiconductor wafer W uniform when heated by a halogen lamp.
Description
本發明有關於一種熱處理裝置,係藉由對半導體晶圓等薄板狀精密電子基板(以下簡稱為「基板」)照射光線來加熱該基板。 The present invention relates to a heat treatment device for heating a thin plate-shaped precision electronic substrate (hereinafter referred to simply as a "substrate") by irradiating light with the substrate.
在半導體器件(semiconductor device)的製造製程中,雜質導入為用以將pn接合形成於半導體晶圓內所需的步驟。現今,雜質導入一般係藉由離子佈值(ion implantation)法及後續的退火(anneal)法所進行。離子佈值法為使硼(B)、砷(As)、磷(P)此類的雜質的元素離子化並以高加速電壓衝撞至半導體晶圓而物理性地進行雜質植入之技術。所植入的雜質係藉由退火處理而活化。此時,當退火時間為數秒左右以上時,會有所佈值的雜質藉由熱能而深深地擴散,導致接合深度變得比要求還深從而對形成良好的器件產生妨礙之虞。 In a semiconductor device manufacturing process, impurities are introduced as a step required to form a pn junction in a semiconductor wafer. Nowadays, impurity introduction is generally performed by an ion implantation method and a subsequent annealing method. The ion distribution method is a technique for physically implanting an impurity element by ionizing elements such as boron (B), arsenic (As), and phosphorus (P), and impinging on a semiconductor wafer with a high acceleration voltage. The implanted impurities are activated by annealing. At this time, when the annealing time is about several seconds or more, the value-imparted impurities are deeply diffused by thermal energy, resulting in a deeper junction depth than required, which may prevent the formation of a good device.
因此,近年來閃光燈退火(FLA;flash lamp anneal)係作為用以在極短時間內加熱半導體晶圓之退火技術而受到矚 目。閃光燈退火係如下述的熱處理技術:在使用氙閃光燈(xenon flash lamp)(以下在簡稱為「閃光燈」時意指氙閃光燈)對半導體晶圓的表面照射閃光光線,藉此僅使植入有雜質的半導體晶圓的表面於極短時間(數毫秒(milli second)以下)內升溫。 Therefore, in recent years, flash lamp annealing (FLA) has attracted attention as an annealing technique for heating semiconductor wafers in a very short time. Flash annealing is a heat treatment technique such as the following: when a xenon flash lamp (hereinafter referred to as a "flash" is referred to as a xenon flash) is used to irradiate the surface of a semiconductor wafer with flash light, thereby only implanting impurities The surface of the semiconductor wafer is heated in a very short time (less than milliseconds).
氙閃光燈的放射分光分布係從紫外線波段(ultraviolet band)至近紅外線波段(near infrared band),波長比以往的鹵素燈還短,且與矽的半導體晶圓的基礎吸收帶域大致一致。因此,在從氙閃光燈對半導體晶圓照射閃光光線時,穿透光少,可將半導體晶圓急速地升溫。此外,已判明只要為數毫秒以下的極短時間的閃光光線照射,即能選擇性地僅將半導體晶圓的表面附近升溫。因此,只要藉由氙閃光燈進行極短時間的升溫,即不會使雜質深深地擴散,而能僅執行雜質活化。 The xenon flash has a spectral distribution of radiation from the ultraviolet band to the near infrared band. The wavelength is shorter than that of conventional halogen lamps and is approximately the same as the basic absorption band of silicon semiconductor wafers. Therefore, when a semiconductor wafer is irradiated with flash light from a xenon flash lamp, less light is transmitted, and the semiconductor wafer can be rapidly heated. In addition, it has been found that as long as the flash light is irradiated for a very short time of several milliseconds or less, it is possible to selectively heat only the vicinity of the surface of the semiconductor wafer. Therefore, as long as the temperature is raised for a short time by the xenon flash lamp, impurities will not be diffused deeply, and only the activation of the impurities can be performed.
作為使用了此種氙閃光燈的熱處理裝置,於專利文獻1揭示了一種技術,係於石英製的承載體(susceptor)的上表面形成複數個凸塊(bump)(支撐銷),並對被這些支撐銷點接觸地支撐的半導體晶圓進行閃光加熱。在專利文獻1所揭示的裝置中,鹵素燈從載置於承載體上的半導體晶圓的下表面進行光線照射予以預加熱後,從閃光燈對晶圓表面照射閃光光線並進行閃光加熱。 As a heat treatment device using such a xenon flash lamp, a technique is disclosed in Patent Document 1 in which a plurality of bumps (support pins) are formed on the upper surface of a quartz-made support (susceptor), The semiconductor wafer supported by the support pins in point contact is flash-heated. In the device disclosed in Patent Document 1, a halogen lamp is pre-heated by irradiating light from the lower surface of a semiconductor wafer placed on a carrier, and then flash light is irradiated from the flash to the surface of the wafer and flash-heated.
如專利文獻1所揭示般,當藉由複數個支撐銷點接觸地支撐半導體晶圓時,在接觸部位中於半導體晶圓與支撐銷之間產生熱傳導。在藉由來自鹵素燈的光線照射進行預加熱時,由於石英幾乎不會吸收光線,因此半導體晶圓變成比石英的承載體還高溫,產生熱能從半導體晶圓朝支撐銷移動。結果,在半導體晶圓面內中之與複數個支撐銷接觸部位附近中的溫度變成比其他區域相對性地還低。 As disclosed in Patent Document 1, when a semiconductor wafer is supported by a plurality of support pins in point contact, heat conduction occurs between the semiconductor wafer and the support pins in the contact portion. When preheating by light irradiation from a halogen lamp, since quartz hardly absorbs light, the semiconductor wafer becomes higher temperature than the carrier of quartz, and heat energy is generated to move from the semiconductor wafer toward the support pin. As a result, the temperature in the vicinity of the portion in contact with the plurality of support pins in the surface of the semiconductor wafer becomes relatively lower than in other regions.
因此,於專利文獻2中,已提案有一種技術,係藉由反射部將從雷射光源射出的雷射光導引至支撐銷,將容易產生溫度降低的支撐銷與半導體晶圓之間的接觸部位附近輔助性地加熱,從而防止該部位的相對性地溫度降低。 Therefore, in Patent Document 2, a technology has been proposed in which a laser beam emitted from a laser light source is guided to a support pin by a reflecting portion, and a contact between the support pin and a semiconductor wafer that is liable to decrease in temperature is likely to occur. The vicinity of the site is heated auxiliaryly to prevent the relative temperature drop of the site.
[先前技術文獻] [Prior technical literature]
專利文獻1:日本特開2009-164451號公報。 Patent Document 1: Japanese Patent Application Laid-Open No. 2009-164451.
專利文獻2:日本特開2015-18909號公報。 Patent Document 2: Japanese Patent Application Laid-Open No. 2015-18909.
然而,在專利文獻2所揭示的裝置中,需要將複數個(與支撐銷相同數量)的雷射光源設置於腔室(chamber)內。從抑制氛圍氣體的消耗量之觀點而言,要求儘可能地減少腔室內的容量,且有時亦難以將多數的雷射光源設置於腔室內。此外,較佳為於用以收容半導體晶圓之腔室內將有 成為污染源之虞的機器的設置控制在最低限度。 However, in the device disclosed in Patent Document 2, it is necessary to install a plurality of (the same number of support pins) laser light sources in a chamber. From the viewpoint of suppressing the consumption of atmospheric gas, it is required to reduce the capacity in the chamber as much as possible, and it is sometimes difficult to install a large number of laser light sources in the chamber. In addition, it is preferable that the installation of a device that may be a source of pollution is controlled to a minimum in a chamber for accommodating a semiconductor wafer.
本發明有鑑於上述課題而研創,目的在於提供一種能以簡易的構成將光線照射時的基板面內的溫度分布設成均勻之熱處理裝置。 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a heat treatment device capable of setting a uniform temperature distribution in a substrate surface during light irradiation with a simple structure.
為了解決上述課題,第一形態的發明為一種熱處理裝置,係對基板照射光線藉此加熱該基板;該熱處理裝置係具備有:腔室,係收容基板;石英的平板形狀的保持板,係在前述腔室內經由立設於上表面的複數個支撐銷支撐基板;以及光線照射部,係穿透前述保持板將光線照射至被前述保持板支撐的基板;前述複數個支撐銷係由光吸收材料所形成,該光吸收材料係用以吸收從前述光線照射部照射的光線。 In order to solve the above problems, the first aspect of the invention is a heat treatment device for irradiating a substrate with light to heat the substrate. The heat treatment device is provided with: a chamber for housing the substrate; The chamber supports the substrate via a plurality of support pins standing on the upper surface; and a light irradiating part penetrates the holding plate to irradiate light to the substrate supported by the holding plate; the plurality of support pins are made of light absorbing material The light absorbing material is formed to absorb light emitted from the light irradiating portion.
此外,第二形態的發明為一種熱處理裝置,係對基板照射光線藉此加熱該基板;該熱處理裝置係具備有:腔室,係收容基板;石英的平板形狀的保持板,係在前述腔室內經由立設於上表面的複數個支撐銷支撐基板;以及光線照射部,係穿透前述保持板將光線照射至被前述保持板支撐的基板;於前述複數個支撐銷的表面設置有由光吸收材料所形成的光吸收膜,該光吸收材料係用以吸收從前述光線照射部照射的光線。 In addition, a second aspect of the invention is a heat treatment device for irradiating a substrate with light to heat the substrate. The heat treatment device is provided with a chamber for accommodating the substrate and a flat plate-shaped holding plate for quartz placed in the chamber. The substrate is supported by a plurality of support pins standing on the upper surface; and a light irradiating portion penetrates the holding plate to irradiate light to the substrate supported by the holding plate; and the surface of the plurality of support pins is provided with light absorption. A light absorbing film formed of a material, the light absorbing material is used to absorb light radiated from the light irradiating portion.
此外,第三形態的發明為一種熱處理裝置,係對基板照射光線藉此加熱該基板;該熱處理裝置係具備有:腔室,係收容基板;石英的平板形狀的保持板,係在前述腔室內經由立設於上表面的複數個支撐銷支撐基板;以及光線照射部,係穿透前述保持板將光線照射至被前述保持板支撐的基板;於前述複數個支撐銷與前述保持板之間夾入有由光吸收材料所形成的光吸收膜,該光吸收材料係用以吸收從前述光線照射部照射的光線。 In addition, a third aspect of the invention is a heat treatment device for irradiating a substrate with light to heat the substrate. The heat treatment device is provided with a chamber for accommodating the substrate, and a flat plate-shaped holding plate for quartz placed in the chamber. The substrate is supported by a plurality of support pins standing on the upper surface; and a light irradiating portion penetrates the holding plate to irradiate light to the substrate supported by the holding plate; and is sandwiched between the plurality of support pins and the holding plate A light absorbing film made of a light absorbing material is incorporated, and the light absorbing material is used to absorb light radiated from the light irradiating portion.
此外,第四形態的發明為一種熱處理裝置,係對基板照射光線藉此加熱該基板;該熱處理裝置係具備有:腔室,係收容基板;石英的平板形狀的保持板,係在前述腔室內經由立設於上表面的複數個支撐銷支撐基板;以及光線照射部,係穿透前述保持板將光線照射至被前述保持板支撐的基板;於前述保持板的下表面中之與前述複數個支撐銷相對向的區域設置有由光吸收材料所形成的光吸收膜,該光吸收材料係用以吸收從前述光線照射部照射的光線。 In addition, a fourth aspect of the invention is a heat treatment device for irradiating a substrate with light to heat the substrate. The heat treatment device includes a chamber for receiving the substrate, and a flat plate-shaped holding plate for quartz placed in the chamber. The substrate is supported by a plurality of support pins erected on the upper surface; and the light irradiating portion penetrates the holding plate and irradiates light to the substrate supported by the holding plate; A light absorbing film formed of a light absorbing material is provided in a region where the support pins are opposite to each other, and the light absorbing material is used to absorb light radiated from the light irradiating portion.
此外,第五形態的發明為一種熱處理裝置,係對基板照射光線藉此加熱該基板;該熱處理裝置係具備有:腔室,係收容基板;石英的平板形狀的保持板,係在前述腔室內經由立設於上表面的複數個支撐銷支撐基板;以及光線照射部,係穿透前述保持板將光線照射至被前述保持板支撐 的基板;由光吸收材料形成前述保持板中之立設有前述複數個支撐銷的部位,該光吸收材料係用以吸收從前述光線照射部照射的光線。 In addition, a fifth aspect of the invention is a heat treatment device for irradiating a substrate with light to heat the substrate. The heat treatment device includes a chamber for receiving the substrate, and a flat plate-shaped holding plate for quartz placed in the chamber. The substrate is supported by a plurality of support pins erected on the upper surface; and the light irradiating portion penetrates the holding plate to irradiate light to the substrate supported by the holding plate; a standing portion of the holding plate is formed of a light absorbing material The light absorbing material is used to absorb the light irradiated from the light irradiating part at the plurality of support pins.
此外,第六形態的發明係在第一形態至第五形態的任一發明的熱處理裝置中,前述光吸收材料為不透明石英。 The invention according to the sixth aspect is the heat treatment apparatus according to any one of the first to fifth aspects, wherein the light absorbing material is opaque quartz.
此外,第七形態的發明係在第六形態的發明的熱處理裝置中,前述不透明石英為黑色合成石英。 The seventh aspect of the invention is the heat treatment apparatus of the sixth aspect of the invention, wherein the opaque quartz is black synthetic quartz.
此外,第八形態的發明係在第一形態至第五形態中的任一發明的熱處理裝置中,前述光吸收材料為碳化矽。 The eighth aspect of the invention is the heat treatment apparatus of any one of the first to fifth aspects, wherein the light absorbing material is silicon carbide.
此外,第九形態的發明係在第一形態至第五形態中的任一發明的熱處理裝置中,將前述光吸收材料投影至水平面之形狀為直徑4mm以下的圓形。 The ninth aspect of the invention is a heat treatment device according to any one of the first to fifth aspects, wherein the shape of the light absorbing material projected onto a horizontal plane is a circle having a diameter of 4 mm or less.
依據第一形態的發明,由於在藉由光線照射部進行加熱時複數個支撐銷係吸收來自光線照射部的光線而升溫,因此能抑制支撐銷與基板之間的接觸部位附近中的溫度降低,並以簡易的構成將光線照射時的基板面內的溫度分布設成均勻。 According to the invention of the first aspect, since the plurality of support pins absorb the light from the light irradiating portion and heat up when the light is irradiated by the light irradiating portion, the temperature drop in the vicinity of the contact portion between the support pin and the substrate can be suppressed. The temperature distribution in the substrate surface when the light is irradiated is made uniform with a simple structure.
依據第二形態的發明,由於在藉由光線照射部進行加熱時設置於複數個支撐銷的表面之光吸收膜係吸收來自光線照射部的光線而升溫,因此能抑制支撐銷與基板之間的接觸部位附近中的溫度降低,並以簡易的構成將光線照射時的基板面內的溫度分布設成均勻。 According to the invention of the second aspect, since the light absorbing film system provided on the surface of the plurality of support pins when heating by the light irradiating section absorbs light from the light irradiating section and heats up, the temperature between the support pin and the substrate can be suppressed. The temperature in the vicinity of the contact portion is reduced, and the temperature distribution in the substrate surface at the time of light irradiation is made uniform with a simple configuration.
依據第三形態的發明,由於在藉由光線照射部進行加熱時夾入於複數個支撐銷與保持板之間的光吸收膜係吸收來自光線照射部的光線而升溫,且產生從光吸收膜朝向支撐銷之傳熱,因此能抑制支撐銷與基板之間的接觸部位附近中的溫度降低,並以簡易的構成將光線照射時的基板面內的溫度分布設成均勻。 According to the invention of the third aspect, the light-absorbing film sandwiched between the plurality of support pins and the holding plate when heating by the light-irradiating section absorbs light from the light-irradiating section and heats up, and generates light from the light-absorbing film. Since heat is transmitted to the support pin, it is possible to suppress a temperature drop in the vicinity of the contact portion between the support pin and the substrate, and to make the temperature distribution in the substrate surface uniform when the light is irradiated with a simple structure.
依據第四形態的發明,由於藉由光線照射部進行加熱時設置於保持板的下表面中之與複數個支撐銷相對向的區域之光吸收膜係吸收來自光線照射部的光線而升溫,且產生從光吸收膜朝向支撐銷之傳熱,因此能抑制支撐銷與基板之間的接觸部位附近中的溫度降低,並以簡易的構成將光線照射時的基板面內的溫度分布設成均勻。 According to the invention of the fourth aspect, the light absorbing film provided in the area facing the plurality of support pins in the lower surface of the holding plate when heating by the light irradiation section absorbs light from the light irradiation section and heats up, and Since the heat transfer from the light absorption film to the support pin is generated, the temperature drop in the vicinity of the contact portion between the support pin and the substrate can be suppressed, and the temperature distribution in the substrate surface when the light is radiated can be made uniform with a simple structure.
依據第五形態的發明,由於藉由光線照射部進行加熱時保持板中之立設有複數個支撐銷的部位係吸收來自光線照射部的光線而升溫,且產生從該部位朝向支撐銷之傳熱,因此能抑制支撐銷與基板之間的接觸部位附近中的溫度降 低,並以簡易的構成將光線照射時的基板面內的溫度分布設成均勻。 According to the fifth aspect of the invention, since the portion provided with the plurality of support pins in the holding plate while being heated by the light irradiating portion absorbs light from the light irradiating portion and heats up, a transmission from the portion toward the support pin occurs. Because of the heat, the temperature drop in the vicinity of the contact portion between the support pin and the substrate can be suppressed, and the temperature distribution in the substrate surface when the light is radiated can be made uniform with a simple configuration.
依據第七形態的發明,由於黑色合成石英的光線的吸收率高,因此能更有效地抑制支撐銷與基板之間的接觸部位附近中的溫度降低。 According to the invention of the seventh aspect, since the light absorption rate of the black synthetic quartz is high, it is possible to more effectively suppress the temperature drop in the vicinity of the contact portion between the support pin and the substrate.
依據第九形態的發明,由於將光吸收材料投影至水平面之形狀為直徑4mm以下的圓形,因此能抑制光吸收材料的遮光所造成的影響,且能獲得光吸收功效。 According to the ninth aspect of the invention, since the shape of the light absorbing material projected to the horizontal plane is a circle with a diameter of 4 mm or less, it is possible to suppress the influence caused by the light-shielding of the light absorbing material and obtain the light absorbing effect.
1‧‧‧熱處理裝置 1‧‧‧ heat treatment equipment
3‧‧‧控制部 3‧‧‧Control Department
4‧‧‧鹵素加熱部 4‧‧‧ Halogen heating section
5‧‧‧閃光加熱部 5‧‧‧Flash heating section
6‧‧‧腔室 6‧‧‧ chamber
7‧‧‧保持部 7‧‧‧ holding department
10‧‧‧移載機構 10‧‧‧ Transfer Agency
11‧‧‧移載手臂 11‧‧‧ transfer arm
12‧‧‧升降銷 12‧‧‧ Lifting Pin
13‧‧‧水平移動機構 13‧‧‧horizontal movement mechanism
14‧‧‧升降機構 14‧‧‧Lifting mechanism
21‧‧‧光吸收膜 21‧‧‧light absorbing film
22‧‧‧圓柱部 22‧‧‧Cylinder
41、51‧‧‧框體 41, 51‧‧‧ frame
43、52‧‧‧反射器 43, 52‧‧‧ reflectors
53‧‧‧閃光光線放射窗 53‧‧‧Flash light emission window
61‧‧‧腔室側部 61‧‧‧ side of chamber
62‧‧‧凹部 62‧‧‧ Recess
63‧‧‧上側腔室窗 63‧‧‧ Upper side chamber window
64‧‧‧下側腔室窗 64‧‧‧ lower side chamber window
65‧‧‧熱處理空間 65‧‧‧Heat treatment space
66‧‧‧搬運開口部 66‧‧‧Transport opening
68、69‧‧‧反射環 68, 69‧‧‧ reflection ring
71‧‧‧基台環 71‧‧‧ abutment ring
72‧‧‧連結部 72‧‧‧ Connection Department
74‧‧‧承載體 74‧‧‧ Carrier
75‧‧‧保持板 75‧‧‧ holding plate
75a‧‧‧保持面 75a‧‧‧ holding surface
76‧‧‧導引環 76‧‧‧Guide ring
77‧‧‧基板支撐銷 77‧‧‧ substrate support pin
78‧‧‧開口部 78‧‧‧ opening
79‧‧‧貫通孔 79‧‧‧through hole
81‧‧‧氣體供給孔 81‧‧‧Gas supply hole
82、87‧‧‧緩衝空間 82, 87‧‧‧ buffer space
83‧‧‧氣體供給管 83‧‧‧Gas supply pipe
84、89、192‧‧‧閥 84, 89, 192‧‧‧ valves
85‧‧‧處理氣體供給源 85‧‧‧Processing gas supply source
86‧‧‧氣體排氣孔 86‧‧‧Gas exhaust hole
88、191‧‧‧氣體排氣管 88、191‧‧‧Gas exhaust pipe
120‧‧‧放射溫度計 120‧‧‧ radiation thermometer
185‧‧‧閘閥 185‧‧‧Gate valve
190‧‧‧排氣部 190‧‧‧Exhaust
d‧‧‧直徑 d‧‧‧diameter
FL‧‧‧閃光燈(氙閃光燈) FL‧‧‧Flash (Xenon Flash)
HL‧‧‧鹵素燈 HL‧‧‧halogen lamp
W‧‧‧半導體晶圓 W‧‧‧Semiconductor wafer
圖1係用以顯示本發明的熱處理裝置的構成之縱剖視圖。 Fig. 1 is a longitudinal sectional view showing the structure of a heat treatment apparatus of the present invention.
圖2係用以顯示保持部的整體外觀之立體圖。 FIG. 2 is a perspective view showing the overall appearance of the holding portion.
圖3係承載體的俯視圖。 Fig. 3 is a plan view of the carrier.
圖4係承載體的剖視圖。 Fig. 4 is a sectional view of a carrier.
圖5係移載機構的俯視圖。 Fig. 5 is a plan view of a transfer mechanism.
圖6係移載機構的側視圖。 Figure 6 is a side view of the transfer mechanism.
圖7係用以顯示複數根鹵素燈的配置之俯視圖。 FIG. 7 is a plan view showing the arrangement of a plurality of halogen lamps.
圖8係將第一實施形態的基板支撐銷的附近放大之圖。 FIG. 8 is an enlarged view of the vicinity of the substrate support pin of the first embodiment.
圖9係將第二實施形態的基板支撐銷的附近放大之圖。 FIG. 9 is an enlarged view of the vicinity of a substrate support pin according to the second embodiment.
圖10係將第三實施形態的基板支撐銷的附近放大之圖。 FIG. 10 is an enlarged view of the vicinity of a substrate support pin according to the third embodiment.
圖11係將第四實施形態的基板支撐銷的附近放大之圖。 FIG. 11 is an enlarged view of the vicinity of a substrate support pin according to the fourth embodiment.
圖12係將第五實施形態的基板支撐銷的附近放大之圖。 Fig. 12 is an enlarged view of the vicinity of a substrate support pin according to a fifth embodiment.
以下參照圖式詳細地說明本發明的實施形態。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
<第一實施形態> <First Embodiment>
圖1係用以顯示本發明的熱處理裝置1的構成之縱剖視圖。本實施形態的熱處理裝置1係一種閃光燈退火裝置,用以對作為基板之圓板形狀的半導體晶圓W進行閃光光線照射,藉此加熱該半導體晶圓W。成為處理對象之半導體晶圓W的尺寸雖然無特別限定,但例如為ψ 300mm或ψ 450mm。此外,在圖1以及圖1以後的各個圖中,為了容易理解,因應需要將各構件的尺寸和數量予以誇張地或簡略地描繪。 Fig. 1 is a longitudinal sectional view showing the structure of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 according to this embodiment is a flash annealing apparatus for irradiating a semiconductor wafer W having a circular plate shape as a substrate with flash light, thereby heating the semiconductor wafer W. Although the size of the semiconductor wafer W to be processed is not particularly limited, it is, for example, ψ 300 mm or ψ 450 mm. In addition, in each of FIG. 1 and the subsequent figures, for ease of understanding, the size and number of each component are exaggerated or briefly described as necessary.
熱處理裝置1係具備有:腔室6,係用以收容半導體晶圓W;閃光加熱部5,係內建複數根閃光燈FL;以及鹵素加熱部4,係內建複數根鹵素燈HL。於腔室6的上側設置有閃光加熱部5,於腔室6的下側設置有鹵素加熱部4。此外,熱處理裝置1係於腔室6的內部具備有:保持部7,係水平姿 勢地保持半導體晶圓W;以及移載機構10,係在保持部7與裝置外部之間進行半導體晶圓W的授受。再者,熱處理裝置1係具備有:控制部3,係控制鹵素加熱部4、閃光加熱部5以及設置於腔室6的各動作機構執行半導體晶圓W的熱處理。 The heat treatment device 1 is provided with a chamber 6 for accommodating a semiconductor wafer W, a flash heating section 5 with a plurality of built-in flashes FL, and a halogen heating section 4 with a plurality of built-in halogen lamps HL. A flash heating section 5 is provided on the upper side of the chamber 6, and a halogen heating section 4 is provided on the lower side of the chamber 6. In addition, the heat treatment device 1 is provided inside the chamber 6 with a holding portion 7 for holding the semiconductor wafer W in a horizontal posture, and a transfer mechanism 10 for performing the semiconductor wafer W between the holding portion 7 and the outside of the device. Acceptance. The heat treatment apparatus 1 is provided with a control unit 3 that controls the halogen heating unit 4, the flash heating unit 5, and various operating mechanisms provided in the chamber 6 to perform heat treatment of the semiconductor wafer W.
腔室6係構成為於筒狀的腔室側部61的上下裝設有石英製的腔室窗。腔室側部61係具有上下開口之大略筒形狀,於上側開口裝設有上側腔室窗63而被封閉,於下側開口裝設有下側腔室窗64而被封閉。用以構成腔室6的頂板部之上側腔室窗63係由石英所形成的圓板形狀構件,且作為石英窗而發揮作用,該石英窗係將從閃光加熱部5射出的閃光光線穿透至腔室6內。此外,用以構成腔室6的底板部之下側腔室窗64亦為由石英所形成的圓板形狀構件,且作為石英窗而發揮作用,該石英窗係將來自鹵素加熱部4的光線穿透至腔室6內。 The chamber 6 is configured such that a chamber window made of quartz is mounted on the upper and lower sides of the cylindrical chamber side portion 61. The chamber side portion 61 has a substantially cylindrical shape with an upper and lower opening. An upper chamber window 63 is installed in the upper opening and closed, and a lower chamber window 64 is installed in the lower opening. The upper chamber window 63 constituting the ceiling portion of the chamber 6 is a disc-shaped member formed of quartz, and functions as a quartz window that penetrates the flash light emitted from the flash heating unit 5. Into the chamber 6. In addition, the chamber window 64 below the bottom portion of the chamber 6 is also a disc-shaped member formed of quartz, and functions as a quartz window that emits light from the halogen heating unit 4 Penetrates into the cavity 6.
此外,於腔室側部61的內側的壁面的上部裝設有反射環68,並於腔室側部61的內側的壁面的下部裝設有反射環69。反射環68、69皆形成為圓環狀。上側的反射環68係從腔室側部61的上側嵌入而裝設。另一方面,下側的反射環69係從腔室側部61的下側嵌入並以未圖示的螺栓固定而裝設。亦即,反射環68、69皆裝卸自如地裝設於腔室側部61。被腔室6的內側空間圍繞的空間亦即被上側腔室窗63、下側腔室 窗64、腔室側部61以及反射環68、69圍繞的空間係被規定作為熱處理空間65。 In addition, a reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side portion 61, and a reflection ring 69 is attached to the lower part of the inner wall surface of the chamber side portion 61. Both the reflection rings 68 and 69 are formed in a ring shape. The upper reflection ring 68 is fitted by being fitted from the upper side of the chamber side portion 61. On the other hand, the lower reflection ring 69 is fitted from the lower side of the chamber side portion 61 and fixed by bolts (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side portion 61. The space surrounded by the inner space of the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61, and the reflection rings 68, 69 is defined as the heat treatment space 65.
於腔室側部61裝設有反射環68、69,藉此於腔室6的內壁面形成有凹部62。亦即,形成被腔室側部61的內壁面中之未裝設有反射環68、69之中央部分、反射環68的下端面以及反射環69的上端面圍繞的凹部62。凹部62係於腔室6的內壁面沿著水平方向形成為圓環狀,並圍繞用以保持半導體晶圓W之保持部7。腔室側部61及反射環68、69係由強度與耐熱性優異的金屬材料(例如不鏽鋼)所形成。 Reflective rings 68 and 69 are attached to the side portion 61 of the chamber, thereby forming a recessed portion 62 on the inner wall surface of the chamber 6. That is, a recessed portion 62 is formed surrounded by the central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, the lower end surface of the reflection ring 68 and the upper end surface of the reflection ring 69. The recessed portion 62 is formed on the inner wall surface of the chamber 6 in a circular shape along the horizontal direction, and surrounds the holding portion 7 for holding the semiconductor wafer W. The cavity side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance.
此外,於腔室側部61形成設置有搬運開口部(爐口)66,該搬運開口部66係用以對腔室6進行半導體晶圓W的搬入及搬出。搬運開口部66係可藉由閘閥(gate valve)185開閉。搬運開口部66係連通連接至凹部62的外周面。因此,在閘閥185將搬運開口部66開放時,能進行半導體晶圓W從搬運開口部66通過凹部62朝熱處理空間65之搬入以及半導體晶圓W從熱處理空間65之搬出。此外,當閘閥185將搬運開口部66閉鎖時,腔室6內的熱處理空間65係成為密閉空間。 In addition, a transfer opening (furnace mouth) 66 is formed in the chamber side portion 61, and the transfer opening 66 is used to carry in and out the semiconductor wafer W from the chamber 6. The conveyance opening 66 can be opened and closed by a gate valve 185. The carrying opening 66 is connected to the outer peripheral surface of the recessed portion 62 in communication. Therefore, when the gate valve 185 opens the transport opening 66, the semiconductor wafer W can be carried in from the transport opening 66 through the recess 62 to the heat treatment space 65 and the semiconductor wafer W can be carried out of the heat treatment space 65. When the gate valve 185 closes the conveyance opening 66, the heat treatment space 65 in the chamber 6 becomes a closed space.
此外,於腔室6的內壁上部形成設置有用以將處理氣體供給至熱處理空間65之氣體供給孔81。氣體供給孔81亦可形成設置於比凹部62還上側的位置,並設置於反射環68。 氣體供給孔81係經由於腔室6的側壁內部圓環狀地形成之緩衝空間82連通連接至氣體供給管83。氣體供給管83係連接至處理氣體供給源85。此外,於氣體供給管83的路徑途中插設有閥84。當閥84被開放時,從處理氣體供給源85對緩衝空間82輸送處理氣體。流入至緩衝空間82的處理氣體係以在流體阻抗比氣體供給孔81還小的緩衝空間82內擴散之方式流動並從氣體供給孔81供給至熱處理空間65內。作為處理氣體,能使用氮(N2)等惰性氣體或者氫(H2)、氨(NH3)等反應性氣體(在本實施形態中為氮)。 In addition, a gas supply hole 81 for supplying a processing gas to the heat treatment space 65 is formed in the upper part of the inner wall of the chamber 6. The gas supply hole 81 may be formed at a position higher than the recessed portion 62 and provided in the reflection ring 68. The gas supply hole 81 is connected to the gas supply pipe 83 via a buffer space 82 formed annularly inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a processing gas supply source 85. A valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, the processing gas is supplied from the processing gas supply source 85 to the buffer space 82. The processing gas system that has flowed into the buffer space 82 flows in a buffer space 82 having a fluid resistance smaller than that of the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65. As the processing gas, an inert gas such as nitrogen (N 2 ) or a reactive gas (such as nitrogen in this embodiment) such as hydrogen (H 2 ) or ammonia (NH 3 ) can be used.
另一方面,於腔室6的內壁下部形成設置有用以將熱處理空間65內的氣體予以排氣之氣體排氣孔86。氣體排氣孔86亦可形成設置於比凹部62還下側的位置,並設置於反射環69。氣體排氣孔86係經由於腔室6的側壁內部圓環狀地形成之緩衝空間87連通連接至氣體排氣管88。氣體排氣管88係連接至排氣部190。此外,於氣體排氣管88的路徑途中插設有閥89。當閥89被開放時,熱處理空間65的氣體係從氣體排氣孔86經由緩衝空間87朝氣體排氣管88排出。此外,氣體供給孔81及氣體排氣孔86亦可沿著腔室6的周方向設置複數個,且亦可為隙縫(slit)狀的孔。此外,處理氣體供給源85及排氣部190亦可為設置於熱處理裝置1的機構,或亦可為設置有熱處理裝置1之工廠的公用設施(utility)。 On the other hand, a gas exhaust hole 86 is formed in the lower portion of the inner wall of the chamber 6 to exhaust the gas in the heat treatment space 65. The gas exhaust hole 86 may be formed at a position lower than the recessed portion 62 and provided in the reflection ring 69. The gas exhaust hole 86 is connected to the gas exhaust pipe 88 via a buffer space 87 formed annularly inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust section 190. A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas system of the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 via the buffer space 87. In addition, a plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the chamber 6 and may be slit-shaped holes. In addition, the processing gas supply source 85 and the exhaust portion 190 may be a mechanism provided in the heat treatment apparatus 1, or may be a utility of a factory in which the heat treatment apparatus 1 is installed.
此外,於搬運開口部66的前端亦連接有用以將熱處理空 間65內的氣體予以排出之氣體排氣管191。氣體排氣管191係經由閥192連接至排氣部190。將閥192開放,藉此經由搬運開口部66將腔室6內的氣體予以排氣。 A gas exhaust pipe 191 is also connected to the front end of the conveyance opening 66 to discharge the gas in the heat treatment space 65. The gas exhaust pipe 191 is connected to the exhaust section 190 via a valve 192. By opening the valve 192, the gas in the chamber 6 is exhausted through the conveyance opening 66.
圖2係用以顯示保持部7的整體外觀之立體圖。保持部7係構成為具備有基台環71、連結部72以及承載體74。基台環71、連結部72以及承載體74皆由石英所形成。亦即,保持部7的整體係由石英所形成。 FIG. 2 is a perspective view showing the overall appearance of the holding portion 7. The holding portion 7 is configured to include an abutment ring 71, a connection portion 72, and a carrier 74. The abutment ring 71, the connection portion 72, and the carrier 74 are all formed of quartz. That is, the entire holding portion 7 is formed of quartz.
基台環71為圓環形狀的一部分缺口之圓弧形狀的石英構件。該缺口部分係設置成用以防止後述之移載機構10的移載手臂11與基台環71之間的干擾。基台環71係載置於凹部62的底面,藉此支撐於腔室6的壁面(參照圖1)。於基台環71的上表面沿著圓環形狀的周方向立設有複數個連結部72(在本實施形態中為4個)。連結部72亦為石英的構件,並藉由熔接固接至基台環71。 The abutment ring 71 is a circular arc-shaped quartz member with a part of a ring shape. The notch portion is provided to prevent interference between the transfer arm 11 and the abutment ring 71 of the transfer mechanism 10 described later. The abutment ring 71 is placed on the bottom surface of the recessed portion 62 and is supported on the wall surface of the chamber 6 (see FIG. 1). On the upper surface of the abutment ring 71, a plurality of connecting portions 72 (four in the present embodiment) are provided standingly along the circumferential direction of the annular shape. The connecting portion 72 is also a member of quartz, and is fixed to the abutment ring 71 by welding.
承載體74係被設置於基台環71之4個連結部72支撐。圖3係承載體74的俯視圖。此外,圖4係承載體74的剖視圖。承載體74係具備有保持板75、導引環76以及複數個基板支撐銷77。保持板75為由石英所形成的略圓形的平板狀構件。保持板75的直徑係比半導體晶圓W的直徑還大。亦即,保持板75係具有比半導體晶圓W還大的平面尺寸。 The carrier 74 is supported by the four connecting portions 72 provided on the abutment ring 71. FIG. 3 is a plan view of the carrier 74. FIG. 4 is a cross-sectional view of the carrier 74. The carrier 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular flat plate member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger planar size than the semiconductor wafer W.
於保持板75的上表面周緣部設置有導引環76。導引環76為具有比半導體晶圓W的直徑還大的內徑之圓環形狀的構件。例如在半導體晶圓W的直徑為ψ 300mm之情形中,導引環76的內徑為ψ 320mm。導引環76的內周係以從保持板75朝上方變寬之方式作成楔形(taper)面。導引環76係與保持板75同樣地由石英所形成。導引環76亦可為熔接至保持板75的上表面,或亦可藉由另外加工的銷等固定至保持板75。或者,亦可將保持板75與導引環76加工成一體的構件。 A guide ring 76 is provided on a peripheral edge portion of the upper surface of the holding plate 75. The guide ring 76 is a ring-shaped member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, when the diameter of the semiconductor wafer W is ψ 300 mm, the inner diameter of the guide ring 76 is φ 320 mm. The inner periphery of the guide ring 76 is tapered so as to widen upward from the holding plate 75. The guide ring 76 is formed of quartz similarly to the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed into an integral member.
保持板75的上表面中之比導引環76還內側的區域作成用以保持半導體晶圓W之平面狀的保持面75a。於保持板75的保持面75a立設有複數個基板支撐銷77。在本實施形態中,沿著與保持面75a的外周圓(導引環76的內周圓)同心圓的周上每隔30°立設有共12個基板支撐銷77。已配置有12個基板支撐銷77之圓的直徑(與相對向的基板支撐銷77之間的距離)係比半導體晶圓W的直徑還小;若半導體晶圓W的直徑為ψ 300mm,則已配置有12個基板支撐銷77之圓的直徑為ψ 270mm至ψ 280mm(在本實施形態中為ψ 280mm)。在第一實施形態中,各個基板支撐銷77係由不透明石英所形成。不透明石英係例如藉由於石英材料內含有多數個細微的氣泡而獲得。作為不透明石英,例如能使用信越石英股份有限公司(Shin-Etsu Quartz Products Co.,Ltd.)製造的OM-100、Tosoh Quartz Corporation製造的OP-3等。 A region of the upper surface of the holding plate 75 that is further inside than the guide ring 76 is a flat holding surface 75a for holding the semiconductor wafer W. A plurality of substrate support pins 77 are erected on the holding surface 75 a of the holding plate 75. In the present embodiment, a total of 12 substrate support pins 77 are provided on the periphery of the concentric circle with the outer periphery of the holding surface 75a (the inner periphery of the guide ring 76) at intervals of 30 °. The diameter of the circle where the 12 substrate support pins 77 have been arranged (the distance from the opposite substrate support pin 77) is smaller than the diameter of the semiconductor wafer W; if the diameter of the semiconductor wafer W is ψ 300 mm, then The diameter of a circle on which the 12 substrate support pins 77 are arranged is ψ 270 mm to ψ 280 mm (in this embodiment, ψ 280 mm). In the first embodiment, each of the substrate support pins 77 is formed of opaque quartz. Opaque quartz is obtained, for example, because a plurality of fine bubbles are contained in a quartz material. As the opaque quartz, for example, OM-100 manufactured by Shin-Etsu Quartz Products Co., Ltd., OP-3 manufactured by Tosoh Quartz Corporation, and the like can be used.
返回圖2,立設於基台環71的4個連結部72與承載體74的保持板75的周緣部係藉由熔接而固接。亦即,承載體74與基台環71係藉由連結部72固定性地連結。此種保持部7的基台環71係支撐於腔室6的壁面,藉此保持部7係裝設於腔室6。在保持部7已裝設於腔室6的狀態下,承載體74的保持板75係成為水平姿勢(法線與鉛直方向一致之姿勢)。亦即,保持板75的保持面75a係成為水平面。此外,將立設於保持板75的上表面的12根基板支撐銷77各者投影至水平面之形狀為直徑4mm以下的圓形。 Returning to FIG. 2, the four connecting portions 72 standing on the abutment ring 71 and the peripheral edge portion of the holding plate 75 of the carrier 74 are fixed by welding. That is, the carrier 74 and the abutment ring 71 are fixedly connected by the connection portion 72. The abutment ring 71 of the holding portion 7 is supported on the wall surface of the chamber 6, and the holding portion 7 is mounted on the chamber 6. In a state where the holding portion 7 is installed in the chamber 6, the holding plate 75 of the carrier 74 is in a horizontal posture (a posture in which the normal line and the vertical direction coincide). That is, the holding surface 75a of the holding plate 75 becomes a horizontal plane. In addition, the shape in which each of the 12 substrate support pins 77 standing on the upper surface of the holding plate 75 is projected to a horizontal plane is a circle having a diameter of 4 mm or less.
已搬入至腔室6的半導體晶圓W係以水平姿勢載置並保持於已裝設在腔室6的保持部7的承載體74上。此時,半導體晶圓W係被立設於保持板75上的12個基板支撐銷77支撐並被保持於承載體74。更嚴格來說,12個基板支撐銷77的上端部係接觸半導體晶圓W的下表面並支撐該半導體晶圓W。由於12個基板支撐銷77的高度(從基板支撐銷77的上端至保持板75的保持面75a為止的距離)一樣,因此能藉由12個基板支撐銷77以水平姿勢支撐半導體晶圓W。 The semiconductor wafer W carried into the chamber 6 is placed in a horizontal posture and held on a carrier 74 mounted on the holding portion 7 of the chamber 6. At this time, the semiconductor wafer W is supported by the 12 substrate support pins 77 erected on the holding plate 75 and held by the carrier 74. More strictly speaking, the upper end portions of the twelve substrate support pins 77 contact the lower surface of the semiconductor wafer W and support the semiconductor wafer W. Since the height of the twelve substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75 a of the holding plate 75) is the same, the semiconductor wafer W can be supported by the twelve substrate support pins 77 in a horizontal posture.
此外,半導體晶圓W係與保持板75的保持面75a隔著預定間隔地被複數個基板支撐銷77支撐。導引環76的厚度係比基板支撐銷77的高度還大。因此,藉由導引環76防止被複數個基板支撐銷77支撐的半導體晶圓W的水平方向的位置偏移。 The semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined interval from the holding surface 75 a of the holding plate 75. The thickness of the guide ring 76 is larger than the height of the substrate support pin 77. Therefore, the guide ring 76 prevents positional displacement of the semiconductor wafer W supported by the plurality of substrate support pins 77 in the horizontal direction.
此外,如圖2及圖3所示,於承載體74的保持板75形成有上下貫通的開口部78。開口部78係設置成用以使放射溫度計120(參照圖1)接受從被保持於承載體74的半導體晶圓W的下表面放射的放射光線(紅外線光線)。亦即,放射溫度計120係經由開口部78接受從被保持於承載體74的半導體晶圓W的下表面放射的光線,並藉由另外設置的檢測器(detector)測量該半導體晶圓W的溫度。再者,於承載體74的保持板75穿設有4個貫通孔79,該4個貫通孔79係用以使後述之移載機構10的升降銷(lift pin)12貫通而進行半導體晶圓W的授受。 In addition, as shown in FIGS. 2 and 3, the holding plate 75 of the carrier 74 is formed with an opening portion 78 penetrating vertically. The opening 78 is provided so that the radiation thermometer 120 (refer to FIG. 1) receives radiation (infrared rays) emitted from the lower surface of the semiconductor wafer W held by the carrier 74. That is, the radiation thermometer 120 receives light radiated from the lower surface of the semiconductor wafer W held by the carrier 74 through the opening 78, and measures the temperature of the semiconductor wafer W by a detector provided separately. . In addition, four through holes 79 are penetrated in the holding plate 75 of the carrier 74, and the four through holes 79 are used for penetrating the lift pins 12 of the transfer mechanism 10 to be described later to perform semiconductor wafers. Acceptance of W.
圖5係移載機構10的俯視圖。此外,圖6係移載機構10的側視圖。移載機構10係具備有兩根移載手臂11。移載手臂11係作成沿著大致圓環狀的凹部62般之圓弧形狀。於各個移載手臂11立設有兩根升降銷12。各個移載手臂11係可藉由水平移動機構13而轉動。水平移動機構13係使一對移載手臂11在移載動作位置(圖5的實線位置)與退避位置(圖5的二點鍊線位置)之間水平移動,該移載動作位置係用以對保持部7進行半導體晶圓W的移載之位置,該退避位置係俯視觀看時不會與被保持部7保持的半導體晶圓W重疊之位置。作為水平移動機構13,係可為藉由個別的馬達分別使各個移載手臂11轉動之機構,亦可為使用連桿(link)機構並藉由一個馬達使一對移載手臂11連動地轉動之機構。 FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 is provided with two transfer arms 11. The transfer arm 11 is formed in a circular arc shape along a substantially annular recess 62. Two lifting pins 12 are erected on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal moving mechanism 13. The horizontal movement mechanism 13 moves a pair of transfer arms 11 horizontally between the transfer operation position (the solid line position in FIG. 5) and the retreat position (the two-point chain line position in FIG. 5). This transfer operation position is used for The retreat position is a position where the semiconductor wafer W is transferred to the holding portion 7, and the retreat position is a position that does not overlap with the semiconductor wafer W held by the holding portion 7 in a plan view. The horizontal movement mechanism 13 may be a mechanism in which each transfer arm 11 is individually rotated by an individual motor, or a pair of transfer arms 11 may be rotated in conjunction by a motor using a link mechanism Institution.
此外,一對移載手臂11係藉由升降機構14而與水平移動機構13一起升降移動。當升降機構14使一對移載手臂11在移載動作位置上升時,共4根的升降銷12係通過穿設於承載體74的貫通孔79(參照圖2及圖3),升降銷12的上端係從承載體74的上表面突出。另一方面,升降機構14係使一對移載手臂11在移載動作位置下降,使升降銷12從貫通孔79移走,當水平移動機構13以將一對移載手臂11打開之方式移動時,各個移載手臂11係移動至退避位置。一對移載手臂11的退避位置係在保持部7的基台環71的正上方。由於基台環71載置於凹部62的底面,因此移載手臂11的退避位置係成為凹部62的內側。此外,構成為亦於移載機構10中之設置有驅動部(水平移動機構13及升降機構14)之部位的附近設置有未圖示的排氣機構,且移載機構10的驅動部周邊的氛圍係被排出至腔室6的外部。 In addition, the pair of transfer arms 11 is moved up and down together with the horizontal movement mechanism 13 by the raising and lowering mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of 4 lifting pins 12 pass through the through-hole 79 (see FIGS. 2 and 3) penetrating the carrier 74, and the lifting pins 12 The upper end is projected from the upper surface of the carrier 74. On the other hand, the lifting mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, and removes the lifting pin 12 from the through hole 79. When the horizontal movement mechanism 13 moves to open the pair of transfer arms 11 At this time, each transfer arm 11 moves to the retreat position. The retreat position of the pair of transfer arms 11 is directly above the abutment ring 71 of the holding portion 7. Since the abutment ring 71 is placed on the bottom surface of the recessed portion 62, the retreat position of the transfer arm 11 becomes the inside of the recessed portion 62. In addition, an exhaust mechanism (not shown) is provided in the vicinity of the portion where the drive unit (horizontal movement mechanism 13 and lifting mechanism 14) is provided in the transfer mechanism 10, and the drive unit 10 and the periphery of the drive unit The atmosphere is exhausted to the outside of the chamber 6.
返回至圖1,設置於腔室6的上方之閃光加熱部5係構成為於框體51的內側具備有:光源,係由複數根(在本實施形態中為30根)氙閃光燈FL所構成;以及反射器(reflect)52,係以覆蓋光源的上方之方式設置。此外,於閃光加熱部5的框體51的底部裝設有閃光光線放射窗53。用以構成閃光加熱部5的底板部之閃光光線放射窗53為由石英所形成之板狀的石英窗。閃光加熱部5係設置於腔室6的上方,藉此閃光光線放射窗53係變成與上側腔室窗63相對向。閃光燈FL 係從腔室6的上方經由閃光光線放射窗53及上側腔室窗63對熱處理空間65照射閃光光線。 Returning to FIG. 1, the flash heating section 5 provided above the chamber 6 is configured to include a light source on the inside of the frame 51 and is composed of a plurality of (30 in this embodiment) xenon flash FL And a reflector 52 is provided so as to cover the light source. A flash light emission window 53 is attached to the bottom of the frame 51 of the flash heating unit 5. The flash light emission window 53 constituting the bottom plate portion of the flash heating portion 5 is a plate-shaped quartz window formed of quartz. The flash heating section 5 is provided above the chamber 6, whereby the flash light emission window 53 is opposed to the upper chamber window 63. The flash FL irradiates the heat treatment space 65 with flash light through the flash light emission window 53 and the upper chamber window 63 from above the chamber 6.
複數根閃光燈FL為分別具有長形的圓筒形狀之棒狀燈,且以各者的長度方向沿著被保持部7保持之半導體晶圓W的主面(亦即沿著水平方向)彼此平行之方式平面狀地排列。因此,藉由閃光燈FL的排列所形成的平面亦為水平面。 The plurality of flashes FL are rod lights each having an elongated cylindrical shape, and the major surfaces of the semiconductor wafers W held by the holding portion 7 in the length direction of each of them are parallel to each other (that is, along the horizontal direction). The arrangement is planar. Therefore, the plane formed by the arrangement of the flashes FL is also a horizontal plane.
氙閃光燈FL係具備有:棒狀的玻璃管(放電管),係於內部封入有氙氣體,且兩端部配設有連接至電容器之陽極及陰極;以及觸發電極,係附設於該玻璃管的外周面上。由於氙氣體為電性地絕緣體,因此即使在電容器積蓄有電荷,在通常狀態下電能亦不會於玻璃管內流通。然而,在對觸發電極施加高電壓而破壞絕緣之情形中,積蓄於電容器的電能係瞬間流通於玻璃管內,並藉由此時的氙的原子或分子的激勵而放出光線。在此種氙閃光燈FL中,由於預先積蓄於電容器的電能量係被轉換成0.1毫秒至100毫秒此種極短的光線脈波,因此與鹵素燈HL般之連續點亮的光源相比具有能照射極強的光線之特徵。亦即,閃光燈FL為在未滿一秒的極短時間內瞬間性地發光之脈波發光燈。此外,閃光燈FL的發光時間係能藉由用以對閃光燈FL進行電力供給之燈電源的線圈常數(coil constant)來調整。 The xenon flash FL is provided with a rod-shaped glass tube (discharge tube) inside which is sealed with xenon gas, and both ends are provided with an anode and a cathode connected to a capacitor; and a trigger electrode is attached to the glass tube. On the outer peripheral surface. Since the xenon gas is an electrical insulator, even if electric charges are accumulated in the capacitor, electric energy does not flow in the glass tube in a normal state. However, in the case where a high voltage is applied to the trigger electrode to break the insulation, the electric energy stored in the capacitor is instantaneously circulated in the glass tube, and light is emitted by the excitation of xenon atoms or molecules at that time. In this kind of xenon flash FL, the electric energy stored in the capacitor is converted into extremely short light pulses of 0.1 milliseconds to 100 milliseconds, so it has a higher energy efficiency than a continuous light source such as a halogen lamp HL. Features of extremely strong light. That is, the flash FL is a pulse light emitting lamp that emits light instantaneously within a very short time of less than one second. In addition, the lighting time of the flash FL can be adjusted by a coil constant of a lamp power supply for supplying power to the flash FL.
此外,反射器52係以覆蓋複數根閃光燈FL整體之方式 設置於複數根閃光燈FL的上方。反射器52的基本功能為將從複數根閃光燈FL射出的閃光光線反射至熱處理空間65之側。反射器52係由鋁合金板所形成,且表面(面向閃光燈FL之側的面)係藉由噴擊(blast)處理施予粗面化加工。 The reflector 52 is provided above the plurality of flashes FL so as to cover the entire plurality of flashes FL. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flashes FL to the side of the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the side of the flash FL) is subjected to a roughening process by a blast process.
設置於腔室6的下方之鹵素加熱部4係於框體41的內側內建複數根(在本實施形態中為40根)鹵素燈HL。鹵素加熱部4為一種光線照射部,該光線照射部係藉由複數根鹵素燈HL從腔室6的下方經由下側腔室窗64朝熱處理空間65進行光線照射並將半導體晶圓W加熱。 A plurality of (in this embodiment, 40) halogen lamps HL are built in the halogen heating section 4 provided below the chamber 6 inside the housing 41. The halogen heating unit 4 is a light irradiation unit that irradiates light to the heat treatment space 65 from below the chamber 6 through the lower chamber window 64 by a plurality of halogen lamps HL and heats the semiconductor wafer W.
圖7係用以顯示複數根鹵素燈HL的配置之俯視圖。40根鹵素燈HL係分開成上下兩段配置。於接近保持部7之上段配設有20根鹵素燈HL,於比上段還遠離保持部7之下段配設有20根鹵素燈HL。各個鹵素燈HL為具有長形的圓筒形狀之棒狀燈。上段及下段各20根鹵素燈HL係以各者的長度方向沿著被保持部7保持之半導體晶圓W的主面(亦即沿著水平方向)彼此平行之方式排列。因此,藉由上段及下段的鹵素燈HL的排列所形成的平面皆為水平面。 FIG. 7 is a plan view showing the arrangement of a plurality of halogen lamps HL. The 40 halogen lamps HL are divided into two sections. Twenty halogen lamps HL are disposed near the upper section of the holding section 7, and 20 halogen lamps HL are disposed farther from the lower section than the upper section. Each halogen lamp HL is a rod-shaped lamp having an elongated cylindrical shape. The 20 halogen lamps HL in the upper stage and the lower stage are arranged so that their lengthwise directions are parallel to each other along the main surfaces of the semiconductor wafers W (that is, along the horizontal direction) held by the holding portion 7. Therefore, the planes formed by the arrangement of the upper and lower halogen lamps HL are all horizontal planes.
此外,如圖7所示,上段及下段中之與周緣部相對向之區域中的鹵素燈HL的配設密度係比於上段及下段中之與被保持部7保持之半導體晶圓W的中央部相對向之區域中的鹵素燈HL的配設密度還高。亦即,上段及下段的燈排列皆為 周緣部中的鹵素燈HL的配設間距比中央部中的鹵素燈HL的配設間距還短。因此,能對藉由來自鹵素加熱部4的光線照射加熱時容易產生溫度降低之半導體晶圓W的周緣部進行多光量的照射。 In addition, as shown in FIG. 7, the arrangement density of the halogen lamps HL in the regions facing the peripheral portion in the upper and lower segments is higher than the center of the semiconductor wafer W held by the holding portion 7 in the upper and lower segments. The arrangement density of the halogen lamps HL in the region facing the other parts is also high. That is, the arrangement of the lamps in the upper and lower stages is that the arrangement pitch of the halogen lamps HL in the peripheral portion is shorter than the arrangement pitch of the halogen lamps HL in the center portion. Therefore, it is possible to irradiate the peripheral portion of the semiconductor wafer W, which is liable to cause a temperature drop when heating is performed by irradiation with light from the halogen heating portion 4, with a large amount of light.
此外,以由上段的鹵素燈HL所構成的燈群與由下段的鹵素燈HL所構成的燈群格子狀地交叉之方式排列。亦即,以配置於上段的20根鹵素燈HL的長度方向與配置於下段的20根鹵素燈HL的長度方向彼此正交之方式配設共40根鹵素燈HL。 Moreover, the lamp group which consists of the halogen lamp HL of an upper stage, and the lamp group which consists of the halogen lamp HL of a lower stage are arrange | positioned so that it may cross | intersect in a grid | lattice. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal directions of the 20 halogen lamps HL arranged in the upper stage and the longitudinal directions of the 20 halogen lamps HL arranged in the lower stage are orthogonal to each other.
鹵素燈HL為燈絲方式的光源,該燈絲方式的光源係藉由對配設於玻璃管內部的燈絲通電而使燈絲白熱化並發光。於玻璃管的內部封入有於氮或氬等惰性氣體微量導入了鹵素元素(碘、溴)的氣體。藉由導入鹵素元素,可抑制燈絲的折損並將燈絲的溫度設定成高溫。因此,鹵素燈HL係具有下述特性:壽命比一般的白熾燈還常且能連續性地照射強的光線。亦即,鹵素燈HL為至少一秒以上連續發光之連續點亮燈。此外,由於鹵素燈HL為棒狀燈因此壽命長,且藉由使鹵素燈HL沿著水平方向配置故對於上方的半導體晶圓W的放射效率優異。 The halogen lamp HL is a filament-type light source, and the filament-type light source heats up the filament and emits light by energizing the filament arranged inside the glass tube. A gas in which a halogen element (iodine, bromine) is trace-introduced into an inert gas such as nitrogen or argon is enclosed in the glass tube. By introducing a halogen element, it is possible to suppress the breakage of the filament and set the temperature of the filament to a high temperature. Therefore, the halogen lamp HL has the following characteristics: It has a longer life than ordinary incandescent lamps and can continuously irradiate strong light. That is, the halogen lamp HL is a continuous lighting lamp that continuously emits light for at least one second. In addition, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL in a horizontal direction, it has excellent radiation efficiency for the semiconductor wafer W above.
此外,亦於鹵素加熱部4的框體41內的兩段鹵素燈HL的下側設置有反射器43(圖1)。反射器43係將從複數根鹵素 燈HL射出的光線反射至熱處理空間65。 A reflector 43 is also provided on the lower side of the two-stage halogen lamp HL in the housing 41 of the halogen heating unit 4 (FIG. 1). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the heat treatment space 65.
控制部3係控制設置於熱處理裝置1之上述各種動作機構。作為控制部3的硬體之構成係與一般的電腦同樣。亦即,控制部3係具備有:屬於電路之CPU(Central Processing Unit;中央處理器),係進行各種運算處理;屬於讀取專用的記憶體之ROM(Read Only Memory;唯讀記憶體),係記憶基本程式;屬於讀寫自如的記憶體之RAM(Random Access Memory;隨機存取記憶體),係記憶各種資訊;以及磁碟,係記憶控制用軟體及資料等。控制部3的CPU係藉由執行預定的處理程式而進行熱處理裝置1中的處理。 The control unit 3 controls the above-mentioned various operating mechanisms provided in the heat treatment apparatus 1. The configuration of the hardware as the control unit 3 is the same as that of a general computer. That is, the control unit 3 is provided with: a CPU (Central Processing Unit; central processing unit) belonging to a circuit that performs various arithmetic processing; a ROM (Read Only Memory) that belongs to a read-only memory, Basic memory programs; RAM (Random Access Memory), which is a readable and writable memory, that stores various information; magnetic disks, and software and data for memory control. The CPU of the control unit 3 executes processing in the heat treatment apparatus 1 by executing a predetermined processing program.
除了上述構成之外,熱處理裝置1亦具備有各種冷卻用的構造,用以防止於半導體晶圓W的熱處理時從鹵素燈HL及閃光燈FL所產生的熱能導致鹵素加熱部4、閃光加熱部5以及腔室6的溫度過度上升。例如,於腔室6的壁體設置有水冷管(未圖示)。此外,鹵素加熱部4及閃光加熱部5係作成於內部形成氣體流而進行排熱之空冷構造。此外,亦對上側腔室窗63與閃光光線放射窗53之間的間隙供給空氣,將閃光加熱部5及上側腔室窗63予以冷卻。 In addition to the above-mentioned structure, the heat treatment device 1 also has various cooling structures to prevent the heat generated from the halogen lamp HL and the flasher FL during the heat treatment of the semiconductor wafer W from causing the halogen heating section 4 and the flash heating section 5 And the temperature of the chamber 6 rises excessively. For example, a water cooling pipe (not shown) is provided on the wall of the chamber 6. In addition, the halogen heating section 4 and the flash heating section 5 have an air-cooled structure in which a gas flow is formed inside and heat is exhausted. In addition, air is also supplied to the gap between the upper chamber window 63 and the flash light emission window 53 to cool the flash heating section 5 and the upper chamber window 63.
接著,說明熱處理裝置1中的半導體晶圓W的處理順序。在此,成為處理對象之半導體晶圓W為已藉由離子植入法添加了雜質(離子)之半導體基板。雜質的活化係藉由熱處理裝 置1所為之閃光光線照射加熱處理(退火)而執行。以下所說明的熱處理裝置1的處理順序係藉由控制部3控制熱處理裝置1的各種動作機構而進行。 Next, a processing procedure of the semiconductor wafer W in the heat treatment apparatus 1 will be described. Here, the semiconductor wafer W to be processed is a semiconductor substrate to which impurities (ions) have been added by an ion implantation method. The activation of the impurities is performed by irradiating a heat treatment (annealing) with the flash light for the heat treatment device 1. The processing sequence of the heat treatment apparatus 1 described below is performed by the control unit 3 controlling various operating mechanisms of the heat treatment apparatus 1.
首先,閘閥185開啟且搬運開口部66開放,藉由裝置外部的搬運機器人經由搬運開口部66將半導體晶圓W搬入至腔室6內的熱處理空間65。被搬運機器人搬入的半導體晶圓W係進出並停止在保持部7的正上方位置。接著,移載機構10的一對移載手臂11係從退避位置水平移動並上升至移載動作位置,藉此升降銷12係通過貫通孔79從承載體74的保持板75的上表面突出並接取半導體晶圓W。此時,升降銷12係上升至比基板支撐銷77的上端還上方。 First, the gate valve 185 is opened and the transfer opening 66 is opened, and a semiconductor robot W is transferred into the heat treatment space 65 in the chamber 6 through the transfer opening 66 by a transfer robot outside the apparatus. The semiconductor wafer W carried in by the transfer robot is moved in and out and stopped at a position directly above the holding portion 7. Next, the pair of transfer arms 11 of the transfer mechanism 10 are horizontally moved from the retracted position and raised to the transfer operation position, whereby the lift pin 12 is protruded from the upper surface of the holding plate 75 of the carrier 74 through the through hole 79 and Take the semiconductor wafer W. At this time, the lift pin 12 is raised above the upper end of the substrate support pin 77.
半導體晶圓W被載置於升降銷12後,搬運機器人從熱處理空間65退出,並藉由閘閥185閉鎖搬運開口部66。接著,一對移載手臂11下降,藉此半導體晶圓W係從移載機構10被授予至保持部7的承載體74,並從下方以水平姿勢被保持。半導體晶圓W係被立設於保持板75上的複數個基板支撐銷77支撐並被承載體74保持。此外,半導體晶圓W係將進行過圖案(pattern)形成且已植入雜質之表面作為上表面被保持於保持部7。於被複數個基板支撐銷77支撐的半導體晶圓W的背面(與表面相反側的主面)與保持板75的保持面75a之間形成有預定的間隔。已下降至承載體74的下方之一對移載手臂11係藉由水平移動機構13退避至退避位置,亦 即退避至凹部62的內側。 After the semiconductor wafer W is placed on the lift pin 12, the transfer robot is withdrawn from the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. Next, the pair of transfer arms 11 is lowered, whereby the semiconductor wafer W is awarded from the transfer mechanism 10 to the carrier 74 of the holding portion 7 and is held in a horizontal posture from below. The semiconductor wafer W is supported by a plurality of substrate support pins 77 standing on a holding plate 75 and held by a carrier 74. In addition, the semiconductor wafer W is held on the holding portion 7 as a top surface on which a pattern has been formed and an impurity has been implanted. A predetermined interval is formed between the back surface (the main surface on the opposite side of the surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75 a of the holding plate 75. One of the pair of transfer arms 11 that has been lowered to the lower side of the carrier 74 is retreated to the retreat position by the horizontal moving mechanism 13, that is, retreat to the inside of the recess 62.
此外,藉由閘閥185閉鎖搬運開口部66並將熱處理空間65作成密閉空間後,進行腔室6內的氛圍調整。具體而言,閥84被開放,從氣體供給孔81對熱處理空間65供給處理氣體。在本實施形態中,氮氣係作為處理氣體供給至腔室6內的熱處理空間65。此外,閥89被開放,從氣體排氣孔86將腔室6內的氣體予以排氣。藉此,從腔室6內的熱處理空間65的上部所供給的處理氣體係朝下方流動並從熱處理空間65的下部排氣,熱處理空間65係被置換成氮氛圍。此外,藉由開放閘192,亦從搬運開口部66將腔室6內的氣體予以排氣。再者,藉由未圖示的排氣機構亦將移載機構10的驅動部周邊的氛圍予以排氣。 In addition, after the conveyance opening 66 is closed by the gate valve 185 and the heat treatment space 65 is made a closed space, the atmosphere in the chamber 6 is adjusted. Specifically, the valve 84 is opened, and the processing gas is supplied from the gas supply hole 81 to the heat treatment space 65. In this embodiment, a nitrogen gas is supplied as a processing gas to the heat treatment space 65 in the chamber 6. Further, the valve 89 is opened, and the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the processing gas system supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65, and the heat treatment space 65 is replaced with a nitrogen atmosphere. In addition, by opening the gate 192, the gas in the chamber 6 is also exhausted from the conveyance opening 66. In addition, the atmosphere around the drive section of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown).
腔室6內被置換成氮氛圍且半導體晶圓W被保持部7的承載體74以水平姿勢從下方保持後,鹵素加熱部4的40根鹵素燈HL一齊點亮並開始預加熱(輔助加熱)。從鹵素燈HL射出的鹵素光線係穿透由石英所形成的下側腔室窗64及承載體74照射至半導體晶圓W的背面。藉由接受來自鹵素燈HL的光線照射,半導體晶圓W係被預加熱從而溫度上升。此外,由於移載機構10的移載手臂11係退避至凹部62的內側,因此不會成為鹵素燈HL加熱時的阻礙。 After the interior of the chamber 6 is replaced with a nitrogen atmosphere and the semiconductor wafer W is held by the carrier 74 of the holding portion 7 from below in a horizontal posture, the 40 halogen lamps HL of the halogen heating portion 4 light up together and start pre-heating (assisted heating). ). The halogen light emitted from the halogen lamp HL penetrates the lower chamber window 64 and the carrier 74 formed of quartz and irradiates the back surface of the semiconductor wafer W. When the light from the halogen lamp HL is irradiated, the semiconductor wafer W is preheated and the temperature rises. In addition, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recessed portion 62, it does not become an obstacle when the halogen lamp HL is heated.
在進行鹵素燈HL所為之預加熱時,藉由放射溫度計120 測量半導體晶圓W的溫度。亦即,放射溫度計120係接收從被承載體74保持的半導體晶圓W的背面經由開口部78放射的紅外線光線,並測量升溫中的晶圓溫度。所測量的半導體晶圓W的溫度係傳達至控制部3。控制部3係監視藉由來自鹵素燈HL的光線照射而升溫之半導體晶圓W的溫度是否已到達預定的預加熱溫度T1,並控制鹵素燈HL的輸出。亦即,控制部3係依據放射溫度計120的測量值,以半導體晶圓W的溫度成為預加熱溫度T1之方式回授(feedback)控制鹵素燈HL的輸出。預加熱溫度T1係控制成200℃至800℃左右,較佳為控制成350℃至600℃左右(在本實施形態中為600℃)。 When the halogen lamp HL is pre-heated, the temperature of the semiconductor wafer W is measured by the radiation thermometer 120. That is, the radiation thermometer 120 receives infrared light emitted from the back surface of the semiconductor wafer W held by the carrier 74 through the opening 78 and measures the temperature of the wafer while the temperature is increasing. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 monitors whether or not the temperature of the semiconductor wafer W heated by the irradiation of light from the halogen lamp HL has reached a predetermined pre-heating temperature T1, and controls the output of the halogen lamp HL. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measurement value of the radiation thermometer 120 so that the temperature of the semiconductor wafer W becomes the pre-heating temperature T1. The preheating temperature T1 is controlled to about 200 ° C to 800 ° C, and preferably controlled to about 350 ° C to 600 ° C (in this embodiment, 600 ° C).
在半導體晶圓W的溫度到達預加熱溫度T1後,控制部3係將半導體晶圓W暫時維持至該預加熱溫度T1。具體而言,在放射溫度計120所測量之半導體晶圓W的溫度到達預加熱溫度T1之時間點,控制部3係調整鹵素燈HL的輸出,並將半導體晶圓W的溫度大致維持至預加熱溫度T1。 After the temperature of the semiconductor wafer W reaches the pre-heating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W to the pre-heating temperature T1. Specifically, at a time point when the temperature of the semiconductor wafer W measured by the radiation thermometer 120 reaches the pre-heating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL and maintains the temperature of the semiconductor wafer W approximately to the pre-heating. Temperature T1.
然而,如上所述,鹵素燈HL所為之預加熱係在藉由12根基板支撐銷77支撐半導體晶圓W的狀態下進行。如以往般,在基板支撐銷77由石英所形成之情形中,基板支撐銷77係幾乎不會吸收從鹵素燈HL照射的光線而是讓光線穿透。因此,於預加熱時,半導體晶圓W係吸收來自鹵素燈HL的光線而升溫,另一方面,包含有基板支撐銷77之承載體74則不太會升溫而相對性地變成比半導體晶圓W還低溫。因此, 產生從半導體晶圓W朝直接接觸的基板支撐銷77之熱傳導,且12根基板支撐銷77的接觸部位附近的晶圓溫度係變成比其他區域相對性地還低。結果,產生半導體晶圓W的面內溫度分布變成不均勻之傾向。 However, as described above, the preheating of the halogen lamp HL is performed in a state where the semiconductor wafer W is supported by the 12 substrate support pins 77. As in the past, in the case where the substrate support pin 77 is formed of quartz, the substrate support pin 77 hardly absorbs the light radiated from the halogen lamp HL but allows the light to pass through. Therefore, during pre-heating, the semiconductor wafer W absorbs light from the halogen lamp HL and heats up. On the other hand, the carrier 74 including the substrate support pin 77 is less likely to heat up and relatively becomes larger than the semiconductor wafer. W is also cold. Therefore, heat conduction occurs from the semiconductor wafer W to the substrate support pins 77 that are in direct contact, and the wafer temperature near the contact portion of the twelve substrate support pins 77 becomes relatively lower than other regions. As a result, the in-plane temperature distribution of the semiconductor wafer W tends to become uneven.
因此,在第一實施形態中,由不透明石英形成立設於保持板75的上表面之12根基板支撐銷77。不透明石英為用以吸收從鹵素燈HL照射的光線而升溫之光吸收材料。亦即,在第一實施形態中,由用以吸收從鹵素燈HL照射的光線而升溫之光吸收材料形成12根基板支撐銷77。 Therefore, in the first embodiment, twelve substrate support pins 77 standing on the upper surface of the holding plate 75 are formed of opaque quartz. Opaque quartz is a light absorbing material that absorbs light emitted from the halogen lamp HL and heats up. That is, in the first embodiment, the twelve substrate support pins 77 are formed of a light absorbing material for absorbing light emitted from the halogen lamp HL and heating up.
圖8係將第一實施形態的基板支撐銷77的附近放大之圖。從鹵素燈HL射出的光線係照射至保持板75的下表面。由於保持板75通常係由透明的石英所形成,因此使從鹵素燈HL射出的光線穿透。已穿透保持板75的光線係照射至半導體晶圓W的背面。此外,已穿透保持板75的光線的一部分亦照射至基板支撐銷77。由於基板支撐銷77係由不透明石英所形成,因此吸收已穿透保持板75的光線而升溫。因此,抑制上述半導體晶圓W中之與基板支撐銷77的接觸部位附近中之相對性的溫度降低,結果能將該接觸部位附近與周邊區域之間的溫度差抑制在最低限度,並能將預加熱時的半導體晶圓W的面內溫度分布設成均勻。 FIG. 8 is an enlarged view of the vicinity of the substrate support pin 77 of the first embodiment. The light emitted from the halogen lamp HL is irradiated to the lower surface of the holding plate 75. Since the holding plate 75 is usually formed of transparent quartz, the light emitted from the halogen lamp HL is transmitted. The light that has passed through the holding plate 75 is irradiated onto the back surface of the semiconductor wafer W. In addition, a part of the light that has penetrated the holding plate 75 is also irradiated to the substrate support pin 77. Since the substrate support pin 77 is formed of opaque quartz, the substrate support pin 77 absorbs light that has passed through the holding plate 75 and heats up. Therefore, the relative temperature decrease in the vicinity of the contact portion of the semiconductor wafer W with the substrate support pin 77 is suppressed, and as a result, the temperature difference between the vicinity of the contact portion and the peripheral region can be suppressed to a minimum, and The in-plane temperature distribution of the semiconductor wafer W during the pre-heating is made uniform.
此外,將基板支撐銷77投影至水平面之形狀為圓形,且 該圓形的直徑d為4mm以下。當將基板支撐銷77投影至水平面之圓形的直徑d比4mm還大時,遮光功效係變成比基板支撐銷77所為之光吸收功效還大,且變成藉由基板支撐銷77於半導體晶圓W的背面形成有影子,如此反而會使半導體晶圓W中之與基板支撐銷77的接觸部位附近中的溫度降低變大。因此,將基板支撐銷77投影至水平面之圓形的直徑d係限定於4mm以下。 The shape of the substrate support pin 77 projected to the horizontal plane is a circle, and the diameter d of the circle is 4 mm or less. When the diameter d of the circle of the substrate support pin 77 projected to the horizontal plane is larger than 4 mm, the light shielding effect becomes larger than the light absorption effect of the substrate support pin 77, and it becomes a semiconductor wafer through the substrate support pin 77. A shadow is formed on the back surface of W, and thus the temperature drop in the vicinity of the contact portion of the semiconductor wafer W with the substrate support pin 77 becomes large. Therefore, the diameter d of the circle projecting the substrate support pin 77 to the horizontal plane is limited to 4 mm or less.
在半導體晶圓W的溫度到達預加熱溫度T1並經過預定時間之時間點,閃光加熱部5的閃光燈FL係對半導體晶圓W的表面進行閃光光線照射。此時,從閃光燈FL放射的閃光光線的一部分係直接朝向腔室6內,另一部分係被反射器52反射而朝向腔室6內,藉由這些閃光光線的照射進行半導體晶圓W的閃光加熱。 When the temperature of the semiconductor wafer W reaches the pre-heating temperature T1 and a predetermined time has elapsed, the flash FL of the flash heating unit 5 irradiates the surface of the semiconductor wafer W with flash light. At this time, a part of the flash light emitted from the flash FL is directly directed into the chamber 6, and the other part is reflected by the reflector 52 and directed into the chamber 6, and the flash heating of the semiconductor wafer W is performed by irradiation of these flash light. .
由於閃光加熱係藉由來自閃光燈FL的閃光光線(閃光)照射而進行,因此能在短時間內使半導體晶圓W的表面溫度上升。亦即,從閃光燈FL照射的閃光光線為預先積蓄於電容器的電能量已被轉換成極短的光脈波且照射時間為0.1毫秒以上100毫秒以下左右之極短且強的閃光。接著,藉由來自閃光燈FL的閃光光線照射而被閃光加熱之半導體晶圓W的表面溫度係瞬間上升至1000℃以上的處理溫度T2,且在植入至半導體晶圓W的雜質被活化後,表面溫度係急速地下降。如此,在熱處理裝置1中,由於能在極短時間內使半導體晶 圓W的表面溫度升降,因此能抑制已植入至半導體晶圓W之雜質因為熱能而擴散,並進行雜質的活化。此外,相較於雜質的熱擴散所需的時間,由於雜質的活化所需的時間極短,因此即使為0.1毫秒至100毫秒左右這種不會產生擴散的短時間,亦會完成活化。 Since the flash heating is performed by irradiation with flash light (flash) from the flash FL, the surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash light radiated from the flash FL is an extremely short and strong flash in which the electric energy stored in the capacitor has been converted into an extremely short light pulse wave and the irradiation time is about 0.1 milliseconds to 100 milliseconds. Next, the surface temperature of the semiconductor wafer W heated by the flash light by the flash light from the flash FL is instantaneously raised to a processing temperature T2 of 1000 ° C. or higher, and after the impurities implanted into the semiconductor wafer W are activated, The surface temperature drops rapidly. As described above, in the heat treatment apparatus 1, since the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, the impurities implanted into the semiconductor wafer W can be suppressed from being diffused due to thermal energy, and the impurities can be activated. In addition, compared with the time required for thermal diffusion of impurities, since the time required for activation of impurities is extremely short, the activation is completed even in a short time of about 0.1 milliseconds to 100 milliseconds which does not cause diffusion.
在本實施形態中,由於以用以吸收從鹵素燈HL照射的光線而升溫之不透明石英形成12根基板支撐銷77,因此抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,並將預加熱階段的半導體晶圓W的面內溫度分布設成均勻。結果,亦能將閃光光線照射時的半導體晶圓W的表面的面內溫度分布設成均勻。 In this embodiment, since the twelve substrate support pins 77 are formed of opaque quartz that absorbs light emitted from the halogen lamp HL and heats up, the vicinity of the contact portion between the substrate support pins 77 and the semiconductor wafer W is suppressed. The temperature is reduced, and the in-plane temperature distribution of the semiconductor wafer W in the pre-heating stage is made uniform. As a result, the in-plane temperature distribution on the surface of the semiconductor wafer W when the flash light is radiated can also be made uniform.
結束閃光加熱處理後且經過預定時間後,鹵素燈HL熄滅。藉此,半導體晶圓W係從預加熱溫度T1急速地降溫。藉由放射溫度計120測量降溫中的半導體晶圓W的溫度,並將測量結果傳達至控制部3。控制部3係依據放射溫度計120的測量結果監視半導體晶圓W的溫度是否已降溫至預定溫度。接著,在半導體晶圓W的溫度降溫至預定以下後,移載機構10的一對移載手臂11係再次從退避位置水平移動並上升至移載動作位置,藉此升降銷12係從承載體74的上表面突出並從承載體74接取熱處理後的半導體晶圓W。接著,被閘閥185閉鎖的搬運開口部66被開放,藉由裝置外部的搬運機器人搬出載置於升降銷12上的半導體晶圓W,結束熱 處理裝置1中的半導體晶圓W的加熱處理。 After the flash heat treatment is completed and a predetermined time has elapsed, the halogen lamp HL is turned off. Thereby, the semiconductor wafer W is rapidly cooled from the preheating temperature T1. The temperature of the semiconductor wafer W being cooled is measured by the radiation thermometer 120, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature based on a measurement result of the radiation thermometer 120. Next, after the temperature of the semiconductor wafer W is lowered below a predetermined value, the pair of transfer arms 11 of the transfer mechanism 10 are moved horizontally from the retreated position and raised to the transfer operation position again, whereby the lift pins 12 are removed from the carrier. The upper surface of 74 protrudes and receives the heat-treated semiconductor wafer W from the carrier 74. Next, the conveyance opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pin 12 is carried out by a conveyance robot outside the apparatus, and the heat treatment of the semiconductor wafer W in the thermal processing apparatus 1 is completed.
在第一實施形態中,立設於保持板75的上表面之12根基板支撐銷77係由用以吸收從鹵素燈HL照射的光線而升溫之光吸收材料所形成。藉此,於藉由鹵素燈HL進行預加熱時,由於12根基板支撐銷77吸收來自鹵素燈HL的光線而升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,並能將預加熱時半導體晶圓W的面內溫度分布設成均勻。結果,亦能將閃光加熱時的半導體晶圓W的表面的面內溫度分布設成均勻。 In the first embodiment, the twelve substrate support pins 77 standing on the upper surface of the holding plate 75 are formed of a light absorbing material for absorbing light emitted from the halogen lamp HL and heating it. Thereby, when preheating by the halogen lamp HL, the 12 substrate support pins 77 absorb light from the halogen lamp HL and heat up, so that it is possible to suppress the vicinity of the contact portion between the substrate support pin 77 and the semiconductor wafer W. The temperature of the semiconductor wafer W is reduced, and the in-plane temperature distribution of the semiconductor wafer W during pre-heating can be made uniform. As a result, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.
此外,在第一實施形態中,僅藉由以光吸收材料形成12根基板支撐銷77來將半導體晶圓W的面內溫度分布設成均勻。亦即,無須用以將基板支撐銷77與半導體晶圓W之間的接觸部位予以加熱之特別的機構或變更設計,並能以簡易的構成將光線照射時的半導體晶圓W的面內溫度分布設成均勻。 In addition, in the first embodiment, the in-plane temperature distribution of the semiconductor wafer W is made uniform only by forming the twelve substrate support pins 77 with a light absorbing material. That is, no special mechanism or design change is required for heating the contact portion between the substrate support pin 77 and the semiconductor wafer W, and the in-plane temperature of the semiconductor wafer W when light is irradiated with a simple structure The distribution is set to be uniform.
<第二實施形態> <Second Embodiment>
接著,說明本發明的第二實施形態。第二實施形態的熱處理裝置1的整體構成大致與第一實施形態相同。此外,第二實施形態的熱處理裝置1中的半導體晶圓W的處理順序亦與第一實施形態同樣。第二實施形態與第一實施形態的差異點為設置光吸收材料之形態。 Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the second embodiment is substantially the same as that of the first embodiment. The processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 of the second embodiment is also the same as that of the first embodiment. A point of difference between the second embodiment and the first embodiment is a form in which a light absorbing material is provided.
圖9係將第二實施形態的基板支撐銷77的附近放大之圖。在第二實施形態中,於立設於保持板75的上表面之12根基板支撐銷77的表面設置由光吸收材料所形成的光吸收膜21,該光吸收材料係用以吸收從鹵素燈HL照射的光線。在第二實施形態中,基板支撐銷77本體係由石英所形成。於該石英的基板支撐銷77的表面成膜由光吸收材料所形成的光吸收膜21。 FIG. 9 is an enlarged view of the vicinity of the substrate support pin 77 according to the second embodiment. In the second embodiment, a light absorbing film 21 made of a light absorbing material is provided on the surface of twelve substrate support pins 77 standing on the upper surface of the holding plate 75. The light absorbing material is used to absorb light from a halogen lamp. HL light. In the second embodiment, the substrate support pin 77 is formed of quartz. A light absorbing film 21 made of a light absorbing material is formed on the surface of the quartz substrate supporting pin 77.
此外,在第二實施形態中,使用氮化矽(SiC)作為光吸收材料。藉由濺鍍、蒸鍍、塗布等手法將氮化矽塗敷(coating)至石英的基板支撐銷77的表面,藉此成膜光吸收膜21。此外,將光吸收膜21投影至水平面之形狀為直徑4mm以下的圓形。 In the second embodiment, silicon nitride (SiC) is used as the light absorbing material. The light-absorbing film 21 is formed by coating silicon nitride on the surface of the substrate support pin 77 of quartz by a method such as sputtering, vapor deposition, and coating. The shape in which the light absorbing film 21 is projected to a horizontal plane is a circle having a diameter of 4 mm or less.
在第二實施形態中,於藉由鹵素燈HL進行預加熱時,由於設置於12根基板支撐銷77的表面之光吸收膜21係吸收來自鹵素燈HL的光線而升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近(嚴格而言為光吸收膜21與半導體晶圓W之間的接觸部位附近)中的溫度降低,並能將預加熱時的半導體晶圓W的面內溫度分布設成均勻。結果,與第一實施形態同樣地,閃光加熱時的半導體晶圓W的表面的面內溫度分布亦能設成均勻。 In the second embodiment, when preheating by the halogen lamp HL, the light absorbing film 21 provided on the surface of the 12 substrate support pins 77 absorbs light from the halogen lamp HL and heats up, so that the substrate support can be suppressed. The temperature in the vicinity of the contact portion between the pin 77 and the semiconductor wafer W (strictly, the vicinity of the contact portion between the light absorbing film 21 and the semiconductor wafer W) is reduced, and the semiconductor wafer W at the time of preheating can be reduced. The in-plane temperature distribution is set to be uniform. As a result, as in the first embodiment, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.
此外,在第二實施形態中,僅藉由於12根基板支撐銷77的表面設置光吸收膜21來將半導體晶圓W的面內溫度分布設成均勻。亦即,無須用以將基板支撐銷77與半導體晶圓W之間的接觸部位予以加熱之特別的機構或變更設計,並能以簡易的構成將光線照射時的半導體晶圓W的面內溫度分布設成均勻。 In addition, in the second embodiment, the in-plane temperature distribution of the semiconductor wafer W is made uniform only by providing the light absorption film 21 on the surface of the twelve substrate support pins 77. That is, no special mechanism or design change is required for heating the contact portion between the substrate support pin 77 and the semiconductor wafer W, and the in-plane temperature of the semiconductor wafer W when light is irradiated with a simple structure The distribution is set to be uniform.
<第三實施形態> <Third Embodiment>
接著,說明本發明的第三實施形態。第三實施形態的熱處理裝置1的整體構成大致與第一實施形態相同。此外,第三實施形態的熱處理裝置1中的半導體晶圓W的處理順序亦與第一實施形態同樣。第三實施形態與第一實施形態的差異點為設置光吸收材料之形態。 Next, a third embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the third embodiment is substantially the same as that of the first embodiment. The processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 of the third embodiment is also the same as that of the first embodiment. A point of difference between the third embodiment and the first embodiment is a form in which a light absorbing material is provided.
圖10係將第三實施形態的基板支撐銷77的附近放大之圖。在第三實施形態中,於12根基板支撐銷77與保持板75之間夾入設置有由光吸收材料所形成的光吸收膜21,該光吸收材料係用以吸收從鹵素燈HL照射的光線。在第三實施形態中,立設於保持板75的上表面之12根基板支撐銷77本體亦由石英所形成。此外,與第二實施形態同樣地,使用氮化矽作為光吸收材料。 FIG. 10 is an enlarged view of the vicinity of the substrate support pin 77 according to the third embodiment. In the third embodiment, a light absorbing film 21 made of a light absorbing material is provided between the 12 substrate supporting pins 77 and the holding plate 75. The light absorbing material is used to absorb the light emitted from the halogen lamp HL. Light. In the third embodiment, the body of twelve substrate support pins 77 standing on the upper surface of the holding plate 75 is also formed of quartz. In addition, as in the second embodiment, silicon nitride was used as the light absorbing material.
在第三實施形態中,藉由濺鍍、蒸鍍、塗布等手法於保持板75的上表面中之應立設12根基板支撐銷7之區域塗敷 氮化矽並成膜光吸收膜21。接著,於光吸收膜21上立設基板支撐銷77,藉此將光吸收膜21夾入至基板支撐銷77與保持板75之間。光吸收膜21的膜厚為0.1mm至0.5mm。此外,將光吸收膜21投影至水平面之形狀為直徑4mm以下的圓形(亦即圓板形狀的光吸收膜21的直徑為4mm以下)。 In the third embodiment, silicon nitride is formed on the upper surface of the holding plate 75 on the upper surface of the holding plate 75 by sputtering, evaporation, coating, or the like to form silicon nitride and form a light absorbing film 21. . Next, a substrate support pin 77 is erected on the light absorption film 21 to sandwich the light absorption film 21 between the substrate support pin 77 and the holding plate 75. The film thickness of the light absorption film 21 is 0.1 mm to 0.5 mm. The shape of the light absorbing film 21 projected to the horizontal plane is a circle having a diameter of 4 mm or less (that is, the diameter of the light absorbing film 21 having a circular plate shape is 4 mm or less).
在第三實施形態中,於藉由鹵素燈HL進行預加熱時,夾入設置於12根基板支撐銷77與保持板75之間的光吸收膜21係吸收來自鹵素燈HL的光線而升溫。由於從已升溫的光吸收膜21朝基板支撐銷77傳遞熱能而使基板支撐銷77本體亦升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,並能將預加熱時的半導體晶圓W的面內溫度分布設成均勻。結果,與第一實施形態同樣地,閃光加熱時的半導體晶圓W的表面的面內溫度分布亦能設成均勻。 In the third embodiment, during the preheating by the halogen lamp HL, the light absorbing film 21 sandwiched between the twelve substrate support pins 77 and the holding plate 75 absorbs light from the halogen lamp HL and heats up. Since the substrate support pin 77 is also heated by transferring thermal energy from the heated light absorbing film 21 to the substrate support pin 77, it is possible to suppress a decrease in temperature in the vicinity of the contact portion between the substrate support pin 77 and the semiconductor wafer W, and The in-plane temperature distribution of the semiconductor wafer W during pre-heating can be made uniform. As a result, as in the first embodiment, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.
此外,在第三實施形態中,僅藉由於12根基板支撐銷77與保持板75之間設置光吸收膜21來將半導體晶圓W的面內溫度分布設成均勻。亦即,無須用以將基板支撐銷77與半導體晶圓W之間的接觸部位予以加熱之特別的機構或變更設計,並能以簡易的構成將光線照射時的半導體晶圓W的面內溫度分布設成均勻。 In addition, in the third embodiment, the in-plane temperature distribution of the semiconductor wafer W is made uniform only by providing the light absorption film 21 between the twelve substrate support pins 77 and the holding plate 75. That is, no special mechanism or design change is required for heating the contact portion between the substrate support pin 77 and the semiconductor wafer W, and the in-plane temperature of the semiconductor wafer W when light is irradiated with a simple structure The distribution is set to be uniform.
<第四實施形態> <Fourth Embodiment>
接著,說明本發明的第四實施形態。第四實施形態的熱處理裝置1的整體構成大致與第一實施形態相同。此外,第四實施形態的熱處理裝置1中的半導體晶圓W的處理順序亦與第一實施形態同樣。第四實施形態與第一實施形態的差異點為設置光吸收材料之形態。 Next, a fourth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the fourth embodiment is substantially the same as that of the first embodiment. The processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 of the fourth embodiment is also the same as that of the first embodiment. The difference between the fourth embodiment and the first embodiment is a form in which a light absorbing material is provided.
圖11係將第四實施形態的基板支撐銷77的附近放大之圖。在第四實施形態中,於保持板75的下表面中之與12根基板支撐銷77相對向之區域設置有由光吸收材料所形成的光吸收膜21,該光吸收材料係用以吸收從鹵素燈HL照射的光線。在第四實施形態中,立設於保持板75的上表面之12根基板支撐銷77本體亦由石英所形成。此外,與第二實施形態同樣地,使用氮化矽作為光吸收材料。 FIG. 11 is an enlarged view of the vicinity of the substrate support pin 77 according to the fourth embodiment. In the fourth embodiment, a light absorbing film 21 made of a light absorbing material is provided in a region of the lower surface of the holding plate 75 opposite to the 12 substrate supporting pins 77, and the light absorbing material is used for absorbing Light from a halogen lamp HL. In the fourth embodiment, the body of twelve substrate support pins 77 standing on the upper surface of the holding plate 75 is also formed of quartz. In addition, as in the second embodiment, silicon nitride was used as the light absorbing material.
在第四實施形態中,藉由濺鍍、蒸鍍、塗布等手法於保持板75的下表面中之與立設於上表面的12根基板支撐銷77相對向之區域塗敷氮化矽並成膜光吸收膜21。光吸收膜21的膜厚為0.1mm至0.5mm。此外,將光吸收膜21投影至水平面之形狀為直徑4mm以下的圓形(亦即圓板形狀的光吸收膜21的直徑為4mm以下)。 In the fourth embodiment, silicon nitride is applied to a region of the lower surface of the holding plate 75 opposed to the twelve substrate support pins 77 standing on the upper surface by means of sputtering, vapor deposition, coating, and the like. Formed a light absorbing film 21. The film thickness of the light absorption film 21 is 0.1 mm to 0.5 mm. The shape of the light absorbing film 21 projected to the horizontal plane is a circle having a diameter of 4 mm or less (that is, the diameter of the light absorbing film 21 having a circular plate shape is 4 mm or less).
在第四實施形態中,於藉由鹵素燈HL進行預加熱時,設置於保持板75的下表面中之與12根基板支撐銷77相對向的區域的光吸收膜21係吸收來自鹵素燈HL的光線而升溫。 由於從已升溫的光吸收膜21朝上方的保持板75及基板支撐銷77傳遞熱能而使基板支撐銷77本體亦升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,並能將預加熱時的半導體晶圓W的面內溫度分布設成均勻。結果,與第一實施形態同樣地,閃光加熱時的半導體晶圓W的表面的面內溫度分布亦能設成均勻。 In the fourth embodiment, when preheating by the halogen lamp HL, the light absorbing film 21 provided on the lower surface of the holding plate 75 in a region facing the 12 substrate supporting pins 77 absorbs the light from the halogen lamp HL The light is heating up. Since the heat is transmitted from the heated light absorbing film 21 to the holding plate 75 and the substrate support pin 77 upward, and the substrate support pin 77 body also heats up, the vicinity of the contact portion between the substrate support pin 77 and the semiconductor wafer W can be suppressed. The intermediate temperature is reduced, and the in-plane temperature distribution of the semiconductor wafer W during pre-heating can be made uniform. As a result, as in the first embodiment, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.
此外,在第四實施形態中,僅藉由於保持板75的下表面設置光吸收膜21來將半導體晶圓W的面內溫度分布設成均勻。亦即,無須用以將基板支撐銷77與半導體晶圓W之間的接觸部位予以加熱之特別的機構或變更設計,並能以簡易的構成將光線照射時的半導體晶圓W的面內溫度分布設成均勻。 In addition, in the fourth embodiment, the in-plane temperature distribution of the semiconductor wafer W is made uniform only by providing the light absorbing film 21 on the lower surface of the holding plate 75. That is, no special mechanism or design change is required for heating the contact portion between the substrate support pin 77 and the semiconductor wafer W, and the in-plane temperature of the semiconductor wafer W when light is irradiated with a simple structure The distribution is set to be uniform.
<第五實施形態> <Fifth Embodiment>
接著,說明本發明的第五實施形態。第五實施形態的熱處理裝置1的整體構成大致與第一實施形態相同。此外,第五實施形態的熱處理裝置1中的半導體晶圓W的處理順序亦與第一實施形態同樣。第五實施形態與第一實施形態的差異點為設置光吸收材料之形態。 Next, a fifth embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus 1 according to the fifth embodiment is substantially the same as that of the first embodiment. The processing sequence of the semiconductor wafer W in the heat treatment apparatus 1 of the fifth embodiment is also the same as that of the first embodiment. A point of difference between the fifth embodiment and the first embodiment is a form in which a light absorbing material is provided.
圖12係將第五實施形態的基板支撐銷77的附近放大之圖。在第五實施形態中,由光吸收材料形成保持板75中之立設有12根基板支撐銷77之部位,該光吸收材料係用以吸收 從鹵素燈HL照射的光線。在第五實施形態中,立設於保持板75的上表面之12根基板支撐銷77本體亦由石英所形成。此外,與第一實施形態同樣地,使用不透明石英作為光吸收材料。 FIG. 12 is an enlarged view of the vicinity of the substrate support pin 77 according to the fifth embodiment. In the fifth embodiment, a portion of the holding plate 75 in which twelve substrate support pins 77 are standing is formed of a light absorbing material, and this light absorbing material is used to absorb light emitted from the halogen lamp HL. In the fifth embodiment, the body of twelve substrate support pins 77 standing on the upper surface of the holding plate 75 is also formed of quartz. In addition, as in the first embodiment, opaque quartz was used as the light absorbing material.
在第五實施形態中,於保持板75中之應立設12根基板支撐銷77之部位上下地貫通並穿設孔,藉由熔接等將不透明石英的圓柱部22埋入至該孔。接著,於該圓柱部22上立設基板支撐銷77。不透明石英的圓柱部22的高度係與保持板75的厚度相同。此外,將不透明石英的圓柱部22投影至水平面之形狀為直徑4mm以下的圓形(亦即圓柱部22的直徑為4mm以下)。 In the fifth embodiment, a hole is formed in the holding plate 75 where 12 substrate support pins 77 should be erected up and down, and a cylindrical portion 22 of opaque quartz is buried in the hole by welding or the like. Next, a substrate support pin 77 is erected on the cylindrical portion 22. The height of the cylindrical portion 22 of the opaque quartz is the same as the thickness of the holding plate 75. The shape of the cylindrical portion 22 of the opaque quartz projected on the horizontal plane is a circle with a diameter of 4 mm or less (that is, the diameter of the cylindrical portion 22 is 4 mm or less).
在第五實施形態中,於藉由鹵素燈HL進行預加熱時,設置於12根基板支撐銷77的下方之不透明石英的圓柱部22係吸收來自鹵素燈HL的光線而升溫。由於從已升溫的圓柱部22朝基板支撐銷77傳遞熱能而使基板支撐銷77本體亦升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低,並能將預加熱時的半導體晶圓W的面內溫度分布設成均勻。結果,與第一實施形態同樣地,閃光加熱時的半導體晶圓W的表面的面內溫度分布亦能設成均勻。 In the fifth embodiment, when preheating by the halogen lamp HL, the cylindrical portion 22 of opaque quartz provided below the 12 substrate support pins 77 absorbs light from the halogen lamp HL and heats up. Since the thermal energy is transmitted from the heated cylindrical portion 22 to the substrate support pin 77 and the substrate support pin 77 body is also heated, the temperature drop in the vicinity of the contact portion between the substrate support pin 77 and the semiconductor wafer W can be suppressed, and the temperature can be reduced. The in-plane temperature distribution of the semiconductor wafer W during pre-heating was made uniform. As a result, as in the first embodiment, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.
此外,在第五實施形態中,僅藉由光吸收材料形成保持 板75的一部分來將半導體晶圓W的面內溫度分布設成均勻。亦即,無須用以將基板支撐銷77與半導體晶圓W之間的接觸部位予以加熱之特別的機構或變更設計,並能以簡易的構成將光線照射時的半導體晶圓W的面內溫度分布設成均勻。 In addition, in the fifth embodiment, the in-plane temperature distribution of the semiconductor wafer W is made uniform only by forming a part of the holding plate 75 with a light absorbing material. That is, no special mechanism or design change is required for heating the contact portion between the substrate support pin 77 and the semiconductor wafer W, and the in-plane temperature of the semiconductor wafer W when light is irradiated with a simple structure The distribution is set to be uniform.
<變化例> <Modifications>
以上雖已說明本發明的實施形態,但本發明只要在不逸離本發明的精神之範圍內,除了上述實施形態以外亦可進行各種變化。例如亦可使用氮化矽作為第一實施形態及第五實施形態的光吸收材料,且亦可使用不透明石英作為第二實施形態至第四實施形態的光吸收材料。此外,在各個實施形態中亦可將作為光吸收材料而使用的不透明石英作為黑色合成石英。由於黑色合成石英係比白色的不透明石英還具有高的光吸收率,因此能吸收來自鹵素燈HL的光線而升溫至更高溫,且能更有效地抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低。 Although the embodiments of the present invention have been described above, the present invention can be variously modified in addition to the above embodiments as long as it does not depart from the spirit of the present invention. For example, silicon nitride can be used as the light absorbing material in the first and fifth embodiments, and opaque quartz can also be used as the light absorbing material in the second to fourth embodiments. In addition, in each embodiment, opaque quartz used as a light absorbing material may be black synthetic quartz. Since black synthetic quartz has higher light absorption than white opaque quartz, it can absorb the light from the halogen lamp HL and heat up to a higher temperature, and can more effectively suppress the substrate support pin 77 and the semiconductor wafer W. The temperature in the vicinity of the contact portion decreases.
此外,亦可適當地組合兩個以上設置有第一實施形態至第五實施形態的光吸收材料之形態。例如亦可組合第一實施形態與第三實施形態,作成將光吸收膜21夾入設置於不透明石英的基板支撐銷77與保持板75之間。或者,亦可組合第一實施形態與第五實施形態,作成於不透明石英的圓柱部22的上坊設置不透明石英的基板支撐銷77。 In addition, two or more light absorbing materials provided with the first to fifth embodiments may be appropriately combined. For example, the first embodiment and the third embodiment may be combined, and the light absorbing film 21 may be sandwiched between a substrate support pin 77 and a holding plate 75 provided between opaque quartz. Alternatively, the substrate support pins 77 of opaque quartz may be provided on the upper side of the cylindrical portion 22 of the opaque quartz by combining the first embodiment and the fifth embodiment.
此外,亦可作成藉由噴砂(sandblast)等粗面化處理將石英的基板支撐銷77的表面作成不透明。如此,與由不透明石英形成基板支撐銷77之情形同樣地,由於基板支撐銷77的表面係吸收來自鹵素燈HL的光線而升溫,因此能抑制基板支撐銷77與半導體晶圓W之間的接觸部位附近中的溫度降低。 Alternatively, the surface of the quartz substrate support pin 77 may be made opaque by a roughening process such as sandblasting. In this way, as in the case where the substrate support pin 77 is formed of opaque quartz, the surface of the substrate support pin 77 absorbs light from the halogen lamp HL and heats up, so that the contact between the substrate support pin 77 and the semiconductor wafer W can be suppressed. The temperature in the vicinity of the site decreases.
此外,在上述實施形態中,雖然作成於閃光加熱部5具備有30根閃光燈FL,但並未限定於此,閃光燈FL的根數可為任意的數量。此外,閃光燈FL並未限定於氙閃光燈,亦可為氪閃光燈。此外,鹵素加熱部4所具有的鹵素燈HL的根數亦未限定於40根,亦可為任意的數量。 In the above-mentioned embodiment, although the flash heating unit 5 is provided with 30 flashes FL, it is not limited to this, and the number of the flashes FL may be any number. In addition, the flash FL is not limited to a xenon flash, and may be a krypton flash. The number of halogen lamps HL included in the halogen heating unit 4 is not limited to 40, and may be any number.
此外,藉由本發明的熱處理裝置成為處理對象之基板並未限定於半導體晶圓,亦可為使用於液晶顯示裝置等平板(flat-panel)顯示器之玻璃基板或太陽電池用的基板。此外,本發明的技術亦可應用於金屬與矽之接合,或者亦可應用於多晶矽的結晶化。 The substrate to be processed by the heat treatment device of the present invention is not limited to a semiconductor wafer, and may be a glass substrate used for a flat-panel display such as a liquid crystal display device or a substrate for a solar cell. In addition, the technology of the present invention can also be applied to the joining of metal and silicon, or it can also be applied to the crystallization of polycrystalline silicon.
此外,本發明的熱處理技術並未限定於閃光燈退火裝置,亦可應用於使用了鹵素燈之葉片式的燈退火裝置或CVD(chemical vapor phase deposition;化學氣相沈積)裝置等閃光燈以外的熱源的裝置。尤其本發明亦可適當地應用於背面 退火(backside anneal)裝置,該背面退火裝置係於腔室的下方配置鹵素燈並從以複數個基板支撐銷支撐在石英的承載體上之半導體晶圓的背面進行光線照射而進行熱處理。 In addition, the heat treatment technology of the present invention is not limited to a flash lamp annealing device, and can also be applied to heat sources other than a flash lamp using a blade-type lamp annealing device using a halogen lamp or a CVD (chemical vapor phase deposition) device. Device. In particular, the present invention can also be suitably applied to a backside anneal device. The backside anneal device is a semiconductor wafer provided with a halogen lamp under the chamber and supported by a plurality of substrate support pins on a quartz carrier. The back surface is irradiated with light and heat-treated.
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JPH0917742A (en) * | 1995-06-30 | 1997-01-17 | Hitachi Ltd | Heat-treating apparatus |
US6315833B1 (en) * | 1999-07-01 | 2001-11-13 | Applied Materials, Inc. | Silicon carbide sleeve for substrate support assembly |
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