TWI670492B - Method for manufacturing micro gas sensor - Google Patents

Method for manufacturing micro gas sensor Download PDF

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TWI670492B
TWI670492B TW107130862A TW107130862A TWI670492B TW I670492 B TWI670492 B TW I670492B TW 107130862 A TW107130862 A TW 107130862A TW 107130862 A TW107130862 A TW 107130862A TW I670492 B TWI670492 B TW I670492B
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sensing layer
gas sensor
manufacturing
gold
sensor
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TW107130862A
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TW202011024A (en
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薛丁仁
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國立高雄科技大學
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Abstract

本發明係有關於一種微型氣體感測器製造方法,其主要係於基板上設置有介電層,及於介電層之加熱元件上設置有感測層後,予以進行加熱,在加熱過程中該感測層會形成有裂縫,於感測層予以鍍上金,令金填補感測層所形成之裂縫,即完成感測器之製作;藉此,以能將感測層所形成的裂縫予以進行填補縮小,進而即能降低阻抗值,防止感測器因高溫造成阻抗增加損壞之情況發生,以延長感測器之使用壽命,連帶令其在使用上更具便利性,而在其整體施行使用上更增實用功效特性者。The invention relates to a method for manufacturing a miniature gas sensor, which is mainly provided with a dielectric layer on a substrate and a sensing layer on a heating element of the dielectric layer, which is then heated during the heating process The sensing layer will be formed with cracks, and the sensing layer is plated with gold to fill the cracks formed by the sensing layer, and the sensor is completed; thereby, the cracks formed by the sensing layer can be removed It is filled and reduced, which can reduce the impedance value, prevent the sensor from being damaged due to high temperature and increase the impedance, so as to extend the service life of the sensor, and make it more convenient to use, but in its entirety Those who use it with more practical features.

Description

微型氣體感測器製造方法Manufacturing method of miniature gas sensor

本發明係有關於一種微型氣體感測器製造方法,尤其是指一種能將感測層所形成的裂縫予以進行填補縮小,進而即能降低阻抗值,防止感測器因高溫造成阻抗增加損壞之情況發生,以延長感測器之使用壽命,連帶令其在使用上更具便利性,而在其整體施行使用上更增實用功效特性者。The invention relates to a method for manufacturing a miniature gas sensor, in particular to a method for filling and reducing cracks formed in a sensing layer, which can reduce the impedance value and prevent the sensor from increasing and damaging the impedance due to high temperature This happens to extend the service life of the sensor, and to make it more convenient to use, and to increase the practical efficiency of its overall application.

按,隨著社會商業化及工業化的演進,越來越多的室內空間被闢建以及越來越多的載具被使用,提供了人們休憩、工作及通勤之所需;然而,當人們處於該些密閉之室內空間時,該些空間往往會因為空氣的不流通而導致有害氣體的濃度累積,輕則影響該空間內人們的生活品質,重則可能直接對人體造成危害。According to the progress of social commercialization and industrialization, more and more indoor spaces are being built and more and more vehicles are used, providing people with the need to rest, work and commute; however, when people are in the In some closed indoor spaces, these spaces often result in the accumulation of harmful gas concentration due to the non-circulation of air, ranging from affecting the quality of life of people in the space, and possibly directly harming the human body.

一般而言,當室內二氧化碳濃度升高時,可能導致氧氣不足、令人困倦、足以引起煩躁之情況,且隨著室內二氧化碳濃度進一步提升,則會開始造成人體的不適,包含頭痛、嗜睡,並伴有精力不集中、注意力下降、心跳加速和輕微噁心的現象,更有可能會造成嚴重缺氧,導致永久性腦損傷、昏迷甚至死亡。Generally speaking, when the indoor carbon dioxide concentration increases, it may lead to insufficient oxygen, drowsiness, enough to cause irritability, and as the indoor carbon dioxide concentration further increases, it will begin to cause discomfort to the human body, including headaches, drowsiness, and Accompanied by inattention, decreased concentration, rapid heartbeat and slight nausea, it is more likely to cause severe hypoxia, leading to permanent brain damage, coma and even death.

另,對於一氧化碳而言,其係為人們日常生活中需要多加留意管控其濃度之氣體,由於一氧化碳為一種無色無味且經由含碳物質的燃燒不完全所生成的化學物質,因此於人們的日常生活當中所發生之天然氣瓦斯燃燒不完全或機車排氣燃燒不完全等情況,皆會使人們在生活環境中接觸到一氧化碳,而一氧化碳由於與人體的血紅蛋白的親和力較氧氣與血紅蛋白的親和力高出兩三百倍之多,因此當人體吸入一氧化碳時,一氧化碳將會與人體內的氧氣競爭結合於血紅蛋白上的機會,取代氧氣與血紅蛋白結合,造成人體血液的含氧量降低,使人們在察覺不到異狀的情況下,逐漸喪失意識、昏迷進而因心臟及腦受損導致死亡。In addition, for carbon monoxide, it is a gas that people need to pay more attention to to control its concentration in daily life. Since carbon monoxide is a colorless and odorless chemical substance produced by incomplete combustion of carbon-containing substances, it is used in people's daily life. The incomplete combustion of natural gas or the incomplete combustion of locomotive exhaust gas will cause people to be exposed to carbon monoxide in their living environment. The affinity of carbon monoxide with the body's hemoglobin is two or three times higher than that of oxygen and hemoglobin It is a hundred times, so when the body inhales carbon monoxide, the carbon monoxide will compete with the oxygen in the body for the opportunity to bind to hemoglobin, replacing oxygen and hemoglobin, resulting in a decrease in the oxygen content of the human blood, so that people can not notice the difference Under such circumstances, he gradually loses consciousness, coma, and then dies due to heart and brain damage.

也因此,於市面上即有各式的氣體感測器能用來偵測氣體濃度;請參閱公告於106年10月21日之第I603080號「微型氣體感測器及其製造方法」,其係為一半導體式之氣體感測器,具有一基板、一介電層、一加熱元件、二電極及一感測層,其製造方法之特徵在於:設置一金屬氧化物層於該加熱元件之上;塗佈一含鑭化合物層於該金屬氧化物層上,共同形成一感測層;及對該感測層進行退火處理,使該含鑭化合物層轉化形成一反應層。Therefore, there are various types of gas sensors on the market that can be used to detect the gas concentration; please refer to the announcement No. I603080 of October 21, 2006, "Miniature Gas Sensors and Their Manufacturing Methods", which It is a semiconductor-type gas sensor with a substrate, a dielectric layer, a heating element, two electrodes and a sensing layer. The manufacturing method is characterized in that a metal oxide layer is provided on the heating element Coating a lanthanum-containing compound layer on the metal oxide layer to form a sensing layer; and annealing the sensing layer to transform the lanthanum-containing compound layer into a reaction layer.

然而,上述「微型氣體感測器及其製造方法」在實際操作施行使用上卻發現,該微型氣體感測器在使用過程中需由該加熱元件產生熱能加熱,以能進行氣體之檢測,而在長期加熱使用後,該金屬氧化層會容易產生裂縫,相對即會令其在使用上之阻抗增加,不僅會影響該微型氣體感測器之使用壽命,更會加速該微型氣體感測器之使用壽命終結,讓該微型氣體感測器之產品損壞率較高,造成其在使用上之極大不便,致令其在整體結構製作設計上仍存在有改進之空間。However, the above-mentioned "miniature gas sensor and its manufacturing method" have found in actual operation that the miniature gas sensor needs to be heated by the heating element during the use process to enable gas detection, and After long-term heating and use, the metal oxide layer will be prone to cracks, which will relatively increase its resistance in use, which will not only affect the service life of the micro gas sensor, but also accelerate the micro gas sensor. The end of service life makes the product damage rate of the miniature gas sensor higher, causing great inconvenience in its use, resulting in room for improvement in the design and manufacture of the overall structure.

緣是,發明人有鑑於此,秉持多年該相關行業之豐富設計開發及實際製作經驗,針對現有之結構及缺失再予以研究改良,提供一種微型氣體感測器製造方法,以期達到更佳實用價值性之目的者。The reason is that in view of this, the inventors have maintained rich design and development and practical production experience in the related industries for many years, and then studied and improved the existing structures and deficiencies to provide a method for manufacturing miniature gas sensors in order to achieve better practical value The purpose of sex.

本發明之主要目的在於提供一種微型氣體感測器製造方法,其主要係能將感測層所形成的裂縫予以進行填補縮小,進而即能降低阻抗值,防止感測器因高溫造成阻抗增加損壞之情況發生,以延長感測器之使用壽命,連帶令其在使用上更具便利性,而在其整體施行使用上更增實用功效特性者。The main purpose of the present invention is to provide a method for manufacturing a miniature gas sensor, which can mainly fill in and reduce the cracks formed by the sensing layer, and thus can reduce the impedance value, and prevent the sensor from being damaged due to high temperature This situation occurs in order to extend the life of the sensor, making it more convenient for use, and more practical and effective in its overall implementation.

本發明微型氣體感測器製造方法之主要目的與功效,係由以下具體技術手段所達成:The main purpose and function of the manufacturing method of the micro gas sensor of the present invention are achieved by the following specific technical means:

其主要係包括下列步驟:It mainly includes the following steps:

A.於基板上設置有介電層,該介電層包括有加熱元件及電極;A. A dielectric layer is provided on the substrate, the dielectric layer includes heating elements and electrodes;

B.於該介電層之該加熱元件上設置有感測層;B. A sensing layer is provided on the heating element of the dielectric layer;

C.予以進行加熱,在加熱過程中該感測層會形成有裂縫;C. It is heated, and cracks will form in the sensing layer during the heating process;

D.於該感測層予以鍍上金,令該金填補該感測層所形成之該裂縫,即完成感測器之製作。D. The sensing layer is plated with gold, so that the gold fills the crack formed by the sensing layer, and the production of the sensor is completed.

本發明微型氣體感測器製造方法的較佳實施例,其中,於C步驟之加熱溫度為300℃~500℃。The preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, wherein the heating temperature in the step C is 300 ° C to 500 ° C.

本發明微型氣體感測器製造方法的較佳實施例,其中,於C步驟之加熱溫度以350℃為最佳。According to a preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, the heating temperature in step C is preferably 350 ° C.

本發明微型氣體感測器製造方法的較佳實施例,其中,於C步驟之加熱時間不超過30天。According to a preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, the heating time in step C does not exceed 30 days.

本發明微型氣體感測器製造方法的較佳實施例,其中,於D步驟係以濺鍍方式在該感測層上鍍上金。According to a preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, in step D, gold is plated on the sensing layer by sputtering.

本發明微型氣體感測器製造方法的較佳實施例,其中,該金之厚度為3nm~30nm。A preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, wherein the thickness of the gold is 3 nm to 30 nm.

本發明微型氣體感測器製造方法的較佳實施例,其中,該金之厚度以10nm為最佳。The preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, wherein the thickness of the gold is preferably 10 nm.

本發明微型氣體感測器製造方法的較佳實施例,其中,於D步驟係以蒸鍍方式在該感測層上鍍上金。According to a preferred embodiment of the manufacturing method of the micro gas sensor of the present invention, in step D, gold is deposited on the sensing layer by vapor deposition.

為令本發明所運用之技術內容、發明目的及其達成之功效有更完整且清楚的揭露,茲於下詳細說明之,並請一併參閱所揭之圖式及圖號:In order to provide a more complete and clear disclosure of the technical content, the purpose of the invention and the effect achieved by the present invention, the following is a detailed description, and please refer to the disclosed drawings and figures:

首先,請參閱第一圖本發明之製造方法流程示意圖及第二圖本發明之結構示意圖所示,本發明主要係包括下列步驟:First, please refer to the first schematic diagram of the manufacturing method of the present invention and the second schematic diagram of the present invention. The present invention mainly includes the following steps:

A.於基板(1)上設置有介電層(2),該介電層(2)包括有加熱元件(21)及電極(22);A. A dielectric layer (2) is provided on the substrate (1), the dielectric layer (2) includes a heating element (21) and an electrode (22);

B.於該介電層(2)之該加熱元件(21)上設置有感測層(3),該感測層(3)係於金屬氧化物塗佈有含鑭化合物或含金金屬氧化物,且經退火處理所形成;B. A sensing layer (3) is provided on the heating element (21) of the dielectric layer (2), the sensing layer (3) is coated with a lanthanum-containing compound or gold-containing metal oxide on the metal oxide Thing, and formed by annealing;

C.將整體進行加熱,加熱溫度為300℃~500℃,且加熱溫度為350℃為最佳,並令加熱時間不超過30天,觀察每一天的阻抗,由於在加熱過程中該感測層(3)會形成有裂縫(31)[請再一併參閱第三圖本發明之感測層加熱形成裂縫狀態示意圖所示],該裂縫寬度約為33nm-35nm,使得阻抗值會逐漸升高,於加熱至第7~9天時,阻抗值趨於穩定;請參下表一所示: 老化天數 阻抗大小 0 16M 1 21.5M 2 22.6M 3 28.5M 7 21.7M 8 21.5M 9 24.2M 表一 C. Heating the whole, the heating temperature is 300 ℃ ~ 500 ℃, and the heating temperature is 350 ℃ is the best, and the heating time is not more than 30 days, observe the impedance of each day, because the sensing layer during the heating process (3) Cracks will be formed (31) [Please also refer to the third figure to show the schematic diagram of the cracking state of the sensing layer of the present invention when heated], the width of the crack is about 33nm-35nm, so that the impedance value will gradually increase , When heated to the 7th to 9th days, the impedance value tends to be stable; please refer to the following table 1: Aging days Impedance 0 16M 1 21.5M 2 22.6M 3 28.5M 7 21.7M 8 21.5M 9 24.2M Table I

D.於該感測層(3)上以濺鍍或蒸鍍方式予以鍍上金(4),其濺鍍參數為電流20mA、秒數15秒、厚度為3nm~30nm,且金(4)的厚度以10nm為最佳,令所濺鍍之該金(4)填補該感測層(3)所形成之該裂縫(31),該裂縫(31)受該金(4)填補後寬度約為14nm-16nm,即完成感測器之製作。D. Sputter or vapor deposit gold (4) on the sensing layer (3), the sputtering parameters are current 20mA, seconds 15 seconds, thickness 3nm ~ 30nm, and gold (4) The thickness of 10nm is the best, so that the sputtered gold (4) fills the crack (31) formed by the sensing layer (3), the crack (31) is filled by the gold (4) and the width is about It is 14nm-16nm, and the production of the sensor is completed.

而將所完成之感測器進行加熱,於溫度升高至350℃時,觀察其阻抗變化,請參下表二所示,可發現到剛開始沒有變化,但隨退火時間越長,阻抗越低,即表示該金(4)逐漸形成奈米粒子填補了該感測層(3)所形成之該裂縫(31)[請再一併參閱第四圖本發明之感測層裂縫受金填補狀態示意圖所示],使該裂縫(31)縮小,即達到令阻抗變小之功效。 老化天數 阻抗大小 0 24.5M 1 4.96M 4 5.21M While heating the completed sensor, observe the change in impedance when the temperature rises to 350 ° C. Please refer to Table 2 below. It can be found that there is no change at the beginning, but the longer the annealing time, the more the impedance Low, which means that the gold (4) gradually forms nanoparticles to fill the crack (31) formed by the sensing layer (3) [please refer to the fourth figure and the crack of the sensing layer of the present invention is filled by gold The state schematic diagram shows that the crack (31) is reduced, that is, the effect of reducing the impedance is achieved. Aging days Impedance 0 24.5M 1 4.96M 4 5.21M

藉由以上所述,本發明之使用實施說明可知,本發明與現有技術手段相較之下,本發明主要係能將感測層所形成的裂縫予以進行填補縮小,進而即能降低阻抗值,防止感測器因高溫造成阻抗增加損壞之情況發生,以延長感測器之使用壽命,連帶令其在使用上更具便利性,而在其整體施行使用上更增實用功效特性者。According to the above description of the use and implementation of the present invention, compared with the prior art means, the present invention can mainly fill in and reduce the cracks formed by the sensing layer, and thus can reduce the impedance value. To prevent the sensor from being damaged due to increased resistance due to high temperature, so as to prolong the service life of the sensor, and to make it more convenient to use, and to increase the practical efficiency of its overall application.

然而前述之實施例或圖式並非限定本發明之產品結構或使用方式,任何所屬技術領域中具有通常知識者之適當變化或修飾,皆應視為不脫離本發明之專利範疇。However, the foregoing embodiments or drawings do not limit the product structure or usage of the present invention, and any appropriate changes or modifications by those with ordinary knowledge in the technical field should be regarded as not departing from the patent scope of the present invention.

綜上所述,本發明實施例確能達到所預期之使用功效,又其所揭露之具體構造,不僅未曾見諸於同類產品中,亦未曾公開於申請前,誠已完全符合專利法之規定與要求,爰依法提出發明專利之申請,懇請惠予審查,並賜准專利,則實感德便。In summary, the embodiments of the present invention can indeed achieve the expected use effect, and the specific structure disclosed has not only been seen in similar products, nor has it been disclosed before the application. It has fully complied with the provisions of the Patent Law. In accordance with the law, the application for an invention patent was submitted in accordance with the law, and we are kindly requested to review it and grant the patent.

(1)‧‧‧基板(1) ‧‧‧ substrate

(2)‧‧‧介電層(2) ‧‧‧ Dielectric layer

(21)‧‧‧加熱元件(21) ‧‧‧ heating element

(22)‧‧‧電極(22) ‧‧‧ electrode

(3)‧‧‧感測層(3) ‧‧‧ sensing layer

(31)‧‧‧裂縫(31) ‧‧‧ Crack

(4)‧‧‧金(4) ‧‧‧ Gold

第一圖:本發明之製造方法流程示意圖Figure 1: Schematic diagram of the manufacturing method of the present invention

第二圖:本發明之結構示意圖Figure 2: Schematic diagram of the present invention

第三圖:本發明之感測層加熱形成裂縫狀態示意圖Figure 3: Schematic diagram of the crack formation state of the sensing layer of the present invention

第四圖:本發明之感測層裂縫受金填補狀態示意圖Figure 4: Schematic diagram of the state where the crack of the sensing layer is filled by gold in the present invention

Claims (8)

一種微型氣體感測器製造方法,其主要係包括下列步驟: A.於基板上設置有介電層,該介電層包括有加熱元件及電極; B.於該介電層之該加熱元件上設置有感測層; C.予以進行加熱,在加熱過程中該感測層會形成有裂縫; D.於該感測層予以鍍上金,令該金填補該感測層所形成之該裂縫,即完成感測器之製作。A method for manufacturing a miniature gas sensor, which mainly includes the following steps: A. A dielectric layer is provided on a substrate, the dielectric layer includes a heating element and an electrode; B. On the heating element of the dielectric layer A sensing layer is provided; C. It is heated and cracks will be formed in the sensing layer during the heating process; D. Gold is plated on the sensing layer so that the gold fills the cracks formed by the sensing layer To complete the production of the sensor. 如申請專利範圍第1項所述微型氣體感測器製造方法,其中,於C步驟之加熱溫度為300℃~500℃。The method for manufacturing a miniature gas sensor as described in item 1 of the patent application scope, wherein the heating temperature in step C is 300 ° C to 500 ° C. 如申請專利範圍第1或2項所述微型氣體感測器製造方法,其中,於C步驟之加熱溫度以350℃為最佳。The manufacturing method of the micro gas sensor as described in item 1 or 2 of the patent application scope, wherein the heating temperature in the step C is preferably 350 ° C. 如申請專利範圍第1項所述微型氣體感測器製造方法,其中,於C步驟之加熱時間不超過30天。The method for manufacturing a micro gas sensor as described in item 1 of the scope of patent application, wherein the heating time in step C does not exceed 30 days. 如申請專利範圍第1項所述微型氣體感測器製造方法,其中,於D步驟係以濺鍍方式在該感測層上鍍上金。The method for manufacturing a miniature gas sensor as described in item 1 of the patent application scope, wherein in step D, gold is plated on the sensing layer by sputtering. 如申請專利範圍第5項所述微型氣體感測器製造方法,其中,該金之厚度為3nm~30nm。The method for manufacturing a miniature gas sensor as described in item 5 of the patent application range, wherein the thickness of the gold is 3 nm to 30 nm. 如申請專利範圍第5或6項所述微型氣體感測器製造方法,其中,該金之厚度以10nm為最佳。The method for manufacturing a micro gas sensor as described in item 5 or 6 of the patent application scope, wherein the thickness of the gold is preferably 10 nm. 如申請專利範圍第1項所述微型氣體感測器製造方法,其中,於D步驟係以蒸鍍方式在該感測層上鍍上金。The method for manufacturing a miniature gas sensor as described in item 1 of the patent application scope, wherein in step D, gold is deposited on the sensing layer by vapor deposition.
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US20020142478A1 (en) * 2001-03-28 2002-10-03 Hiroyuki Wado Gas sensor and method of fabricating a gas sensor
TWI434037B (en) * 2010-12-03 2014-04-11 Ind Tech Res Inst Gas sensor and fabricating method thereof
CN104181203A (en) * 2014-08-13 2014-12-03 苏州能斯达电子科技有限公司 MEMS gas sensor and manufacturing method thereof
CN106324046A (en) * 2016-11-01 2017-01-11 苏州科技大学 Sensitive film gas sensor and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020142478A1 (en) * 2001-03-28 2002-10-03 Hiroyuki Wado Gas sensor and method of fabricating a gas sensor
US20060194332A1 (en) * 2001-03-28 2006-08-31 Denso Corporation Gas sensor and method of fabricating a gas sensor
TWI434037B (en) * 2010-12-03 2014-04-11 Ind Tech Res Inst Gas sensor and fabricating method thereof
CN104181203A (en) * 2014-08-13 2014-12-03 苏州能斯达电子科技有限公司 MEMS gas sensor and manufacturing method thereof
CN106324046A (en) * 2016-11-01 2017-01-11 苏州科技大学 Sensitive film gas sensor and preparation method thereof

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