TWI666577B - Display device and manufacturing method thereof - Google Patents
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Abstract
[課題]提供一種能在畫面上攝像指紋等的對象物的彩色影像的顯示裝置。 [解決手段]具有：用以在畫面顯示彩色像的彩色濾光器(50)；在畫面的一部分或全部以矩陣狀配列，接收通過彩色濾光器(50)的著色部(50R、50G、50B)的從裝置的顯示面側(B1)朝向相對的非顯示面側(B2)的光，並能攝像彩色影像的光感測器(PS)。具有：形成濾光器的第1透明基板；在顯示面側形成畫面的各畫素用的開關元件的第2透明基板；配置於第1及第2透明基板之間，在顯示面側形成光感測器的第3透明基板。[Problem] Provide a display device capable of capturing a color image of an object such as a fingerprint on a screen. [Solution] The color filter (50) is used to display a color image on the screen; a part or all of the screen is arranged in a matrix, and the coloring section (50R, 50G, 50R) that passes the color filter (50) is received. 50B) A light sensor (PS) that emits light from the display surface side (B1) of the device toward the opposite non-display surface side (B2), and can capture a color image. It has a first transparent substrate forming a filter, a second transparent substrate forming a switching element for each pixel of the screen on the display surface side, and a light transmitting device that is disposed between the first and second transparent substrates on the display surface side. The third transparent substrate of the sensor.
Description
本發明係有關於能彩色攝像將人的指紋等的顯示裝置及其製造方法。The present invention relates to a display device capable of color photographing a person's fingerprint and the like, and a manufacturing method thereof.
專利文獻1～6等揭示了將由光感測器所形成的指紋感測器一體化的液晶顯示器及有機EL顯示器。 另一方面，已知由光感測器所形成的指紋感測器為了藉由攝影到的影像進行認證，即便是由印刷機印刷的指紋的影像，也會有將其辨識成本物的指紋的問題。作為其對策的一個，當將手指按壓指紋感測器之面時，若是生體時，因應該手指的按壓力血液的流動方向會發生變化，按壓力越大，手指的顏色會變成藍白色，藉由檢出該變化，來檢測是否為本物的手指的手法被提案。 [先前技術文獻] [專利文獻]Patent Documents 1 to 6 and the like disclose a liquid crystal display and an organic EL display in which a fingerprint sensor formed of a light sensor is integrated. On the other hand, it is known that a fingerprint sensor formed by a light sensor is used for authentication by a photographed image, and even if it is a fingerprint image printed by a printing machine, there will be a fingerprint that recognizes it as an object. problem. As one of the countermeasures, when the finger is pressed against the surface of the fingerprint sensor, if it is a living body, the direction of blood flow will change according to the pressing force of the finger. By detecting this change, a technique of detecting whether or not the finger of the object is proposed is proposed. [Prior Art Literature] [Patent Literature]
[專利文獻1]特開2003-287731號公報 [專利文獻2]特開2004-326806號公報 [專利文獻3]特表2006-503333號公報 [專利文獻4]特開2006-086333號公報 [專利文獻5]特開2002-245443號公報 [專利文獻6]特開2009-064071號公報[Patent Literature 1] JP 2003-287731 [Patent Literature 2] JP 2004-326806 [Patent Literature 3] JP 2006-503333 [Patent Literature 4] JP 2006-086333 [Patent Document 5] JP 2002-245443 [Patent Document 6] JP 2009-064071
[發明所欲解決的問題][Problems to be solved by the invention]
在專利文獻1～6等揭示的顯示裝置中，無法攝像指紋的彩色影像。 又，不只是指紋認證機能，對於兼具能掃描各種對象物的彩色影像的彩色影像掃描器的機能的顯示裝置的需求也存在。In the display devices disclosed in Patent Documents 1 to 6, etc., color images of fingerprints cannot be captured. In addition, there is also a need for a display device not only having a fingerprint authentication function but also a function of a color image scanner capable of scanning color images of various objects.
本發明的目的為提供一種能在畫面上攝像指紋等的對象物的彩色影像的顯示裝置及其製造方法。 [解決問題的手段]An object of the present invention is to provide a display device capable of capturing a color image of an object such as a fingerprint on a screen and a manufacturing method thereof. [Means to solve the problem]
本發明的顯示裝置，具有：用以在畫面顯示彩色像的濾光器； 在前述畫面的一部分或全部以矩陣狀配列，接收從裝置的顯示面側朝向相對的非顯示面側且通過前述濾光器的著色部的光，並能攝像彩色影像的光感測器。The display device of the present invention includes: a filter for displaying a color image on a screen; 配 a part or all of the screen is arranged in a matrix form, and receives from the display surface side of the device toward the opposite non-display surface side and passes the filter A light sensor that can capture color images of light from the colored portion of the light device.
在上述構成中，能採用下述構成：具有：形成前述濾光器的第1透明基板； 在前述顯示面側形成前述畫面的各畫素用的開關元件的第2透明基板； 配置於前述第1及第2透明基板之間，在前述顯示面側形成前述光感測器的第3透明基板。In the above configuration, it is possible to adopt a configuration including: a first transparent substrate forming the filter; a second transparent substrate forming a switching element for each pixel of the screen on the display surface side; arranged in the first A third transparent substrate of the photo sensor is formed between the first and second transparent substrates on the display surface side.
在上述構成中，能採用下述構成：具有：形成前述濾光器的第1透明基板； 形成前述畫面的各畫素用的開關元件的第2透明基板； 前述光感測器形成於與形成前述第2透明基板的開關元件的面相同的面。In the above configuration, the following configuration can be adopted: a second transparent substrate having: a first transparent substrate forming the filter; a second transparent substrate forming a switching element for each pixel of the screen; the photo sensor is formed on and formed The surfaces of the switching elements of the second transparent substrate are the same.
在上述構成中，能採用下述構成：具有：在前述顯示面側形成前述濾光器的第1透明基板； 形成前述畫面的各畫素用的開關元件的第2透明基板； 前述光感測器形成於前述第1透明基板。 該構成中的本發明的顯示裝置的製造方法，具有：在前述第1透明基板的一面側形成前述濾波器的工程； 在前述第1透明基板的另一面側形成前述光感測器的工程。In the above configuration, it is possible to adopt a configuration including: a first transparent substrate on which the filter is formed on the display surface side; 的 a second transparent substrate on which a switching element for each pixel of the screen is formed; the light sensor The device is formed on the first transparent substrate. The method for manufacturing a display device of the present invention in this configuration includes a process of forming the filter on one side of the first transparent substrate; and a process of forming the photo sensor on the other side of the first transparent substrate.
在上述構成中，能採用下述構成：前述濾波器具有：將前述畫面的相鄰各畫素之間間隔的黑矩陣； 該顯示裝置還具有：形成該濾波器的第1透明基板； 在前述顯示面側形成前述畫面的各畫素用的開關元件的第2透明基板； 前述光感測器，在從前述顯示面側朝向非顯示面側的厚度方向，形成於前述濾波器的前述著色部與前述黑矩陣之間。 該構成中的本發明的顯示裝置的製造方法，具有：在前述第1透明基板形成前述濾波器的黑矩陣的工程； 在前述黑矩陣上形成前述光感測器的工程； 以覆蓋前述黑矩陣及前述光感測器的方式，塗佈用以形成前述著色部的材料的工程。In the above configuration, the following configuration can be adopted: the filter includes: a black matrix spaced between adjacent pixels of the screen; the display device further includes: a first transparent substrate forming the filter; in the foregoing The second transparent substrate of the switching element for each pixel of the screen is formed on the display surface side; the light sensor is formed in the colored portion of the filter in a thickness direction from the display surface side to the non-display surface side. And the aforementioned black matrix. The manufacturing method of the display device of the present invention in this configuration includes: a process of forming a black matrix of the filter on the first transparent substrate; 工程 a process of forming the light sensor on the black matrix; and covering the black matrix. And the method of the light sensor, a process of coating a material for forming the colored portion.
在上述構成中，能採用下述構成：前述濾波器具有：將前述畫面的相鄰各畫素之間間隔的黑矩陣； 該顯示裝置還具有：在前述顯示面側形成前述光感測器的第1透明基板； 在前述顯示面側形成前述畫面的各畫素用的開關元件的第2透明基板； 前述黑矩陣以覆蓋形成於前述第1透明基板的前述光感測器的方式隔介著絕緣膜而形成； 在從前述顯示面側朝向非顯示面側的厚度方向，於前述黑矩陣的前述各光感測器的上方區域形成有開口部。 該構成中的本發明的顯示裝置的製造方法，具有：在前述第1透明基板形成光感測器的工程； 隔介著絕緣膜以覆蓋形成於前述第1透明基板的前述光感測器的方式形成前述濾光器的黑矩陣的工程； 在前述黑矩陣的前述各光感測器的上方區域形成開口部的工程。In the above configuration, the following configuration may be adopted: the filter includes a black matrix that spaced adjacent pixels of the screen; and the display device further includes: a light sensor formed on the display surface side. A first transparent substrate; a second transparent substrate on which the switching elements for the pixels of the screen are formed on the display surface side; the black matrix is interposed so as to cover the light sensor formed on the first transparent substrate; An insulating film is formed; 开口 an opening is formed in a region above the respective light sensors of the black matrix in a thickness direction from the display surface side toward the non-display surface side. The manufacturing method of the display device of the present invention in this configuration includes a process of forming a light sensor on the first transparent substrate; and (2) covering the light sensor formed on the first transparent substrate with an insulating film interposed therebetween. A process of forming a black matrix of the aforementioned filter in a manner; (ii) a process of forming an opening in an upper region of each of the photo sensors of the aforementioned black matrix.
在上述構成中，能採用下述構成：具有：在前述顯示面側形成前述畫面的各畫素用的開關元件及前述光感測器的透明基板； 在前述開關元件及前述光感測器上隔介著絕緣膜形成有發光層； 前述發光層具有將畫素間間隔的黑矩陣； 前述發光層上隔介著電極層形成前述濾波器； 前述各光感測器，在從前述顯示面側朝向非顯示面側的厚度方向，配置於前述黑矩陣的下方，且在該黑矩陣的前述各光感測器的上方區域形成有開口部。 該構成中的本發明的顯示裝置的製造方法，具有：在透明基板上形成前述開關元件及前述感測器的工程； 隔介著絕緣膜以覆蓋前述光感測器的方式形成黑矩陣的工程； 在前述黑矩陣上塗佈形成發光層的材料的工程； 在前述黑矩陣的前述各光感測器的上方區域形成開口部的工程。 [發明的效果]In the above configuration, the following configuration can be adopted: a transparent substrate including a switching element for each pixel forming the screen on the display surface side and the light sensor; and 上 on the switching element and the light sensor A light-emitting layer is formed through an insulating film; the light-emitting layer has a black matrix with pixels spaced between the pixels; the light-emitting layer forms the filter through an electrode layer; each of the light sensors is located from the display surface side The thickness direction toward the non-display surface side is arranged below the black matrix, and an opening is formed in an area above the respective light sensors of the black matrix. The manufacturing method of the display device of the present invention in this configuration includes a process of forming the switching element and the sensor on a transparent substrate; and a process of forming a black matrix so as to cover the light sensor through an insulating film A process of coating a material for forming a light-emitting layer on the black matrix; 工程 a process of forming an opening in an upper region of each of the light sensors of the black matrix; [Effect of the invention]
根據本發明，能得到一種能在畫面上攝像彩色影像且薄型化、小型化的顯示裝置。According to the present invention, it is possible to obtain a display device capable of capturing a color image on a screen and being thin and small.
以下，參照圖式說明有關本發明的實施形態。 第1實施形態 圖1A~圖1C表示本發明的第1實施形態之顯示裝置。圖1A～圖1C為將顯示裝置1的一部分切取出者，圖1A為沿著預定方向A1、A2的厚度方向B1、B2的剖面圖，圖1B為沿著方向A1、A2垂直的方向C1、C2的厚度方向B1、B2的剖面圖，圖1C為平面圖。方向B1、B2之中，B1表示顯示面側，B2表示與顯示面側相對的非顯示面側。在圖1C的平面圖中，省略透明、半透明者，僅示出黑矩陣BM、光感測器PS、開關元件TR、下部電極EL2。在其等之中，在黑矩陣BM裡隱藏的部分以虛線表示。在後述圖2C～圖6C中也一樣。Hereinafter, embodiments of the present invention will be described with reference to the drawings. First Embodiment FIG. 1A to FIG. 1C show a display device according to a first embodiment of the present invention. FIGS. 1A to 1C are cut-away portions of the display device 1. FIG. 1A is a cross-sectional view along the thickness directions B1 and B2 along the predetermined directions A1 and A2, and FIG. 1B is a direction C1 perpendicular to the directions A1 and A2. C2 is a cross-sectional view in the thickness direction B1 and B2, and FIG. 1C is a plan view. Among the directions B1 and B2, B1 indicates a display surface side, and B2 indicates a non-display surface side opposite to the display surface side. In the plan view of FIG. 1C, the transparent and translucent ones are omitted, and only the black matrix BM, the light sensor PS, the switching element TR, and the lower electrode EL2 are shown. Among them, the hidden part in the black matrix BM is indicated by a dotted line. The same applies to FIGS. 2C to 6C described later.
顯示裝置1為薄膜電晶體(TFT)式主動矩陣式液晶顯示器。因主動矩陣式液晶顯示器的構成為習知，在以下的說明中，省略關於習知的構成的詳細說明，僅說明本發明的特徵的構造。 如圖所示，從顯示面側B1朝向非顯示面側B2依序設有作為透明基板的玻璃基板20、30、40。此外，取代玻璃基板，可以採用聚碳酸酯等塑膠基板。 在玻璃基板20的顯示面側B1設有偏光元件PL，在偏光元件PL上設有透明的保護玻璃60。藉由使人體的手指FG接觸保護玻璃60的表面，如同後述，能攝像彩色的指紋影像。 在玻璃基板20的非顯示面側B2設有能選擇透過預定色的光的作為濾光器的彩色濾光器50。 彩色濾光器50具有：在玻璃基板20的表面對應畫面的各畫素形成格子狀的遮光性黑矩陣BM、分別使預定色的光透過的著色部50R、50G、50B。作為黑矩陣BM的材料，雖能採用各種材料，但從遮光性、製造容易性及耐腐蝕性等理由來看，能採用金屬鉻膜。著色部50R、50G、50B由習知的光阻材料形成，例如，為含有顏料的有機樹脂材料。The display device 1 is a thin film transistor (TFT) type active matrix liquid crystal display. Since the structure of the active matrix liquid crystal display is conventional, in the following description, detailed description of the conventional structure is omitted, and only the characteristic structure of the present invention will be described. As shown in the figure, glass substrates 20, 30, and 40 as transparent substrates are sequentially provided from the display surface side B1 toward the non-display surface side B2. In addition, instead of a glass substrate, a plastic substrate such as polycarbonate can be used.偏 A polarizing element PL is provided on the display surface side B1 of the glass substrate 20, and a transparent cover glass 60 is provided on the polarizing element PL. By touching the finger FG of the human body to the surface of the protective glass 60, as will be described later, a color fingerprint image can be captured. (2) A non-display surface side B2 of the glass substrate 20 is provided with a color filter 50 as a filter capable of selectively transmitting light of a predetermined color. The color filter 50 includes a light-shielding black matrix BM formed in a grid pattern on the surface of the glass substrate 20 corresponding to each pixel of the screen, and colored portions 50R, 50G, and 50B that transmit light of a predetermined color, respectively. Although various materials can be used as the material of the black matrix BM, a metal chromium film can be used for reasons such as light-shielding properties, ease of manufacture, and corrosion resistance. The colored portions 50R, 50G, and 50B are formed of a conventional photoresist material, and are, for example, organic resin materials containing a pigment.
在玻璃基板40的顯示面側B1，由薄膜電晶體(TFT)形成的開關元件TR對應各畫素以矩陣狀形成，在該開關元件TR上，畫素電極EL2隔介著保護絕緣膜80形成矩陣狀。作為TFT，採用習知的低溫聚Si(LTPS)形或非晶Si形。 在玻璃基板30的非顯示面側B2，形成對向於畫素電極EL2的共通電極EL1。共通電極EL1及畫素電極EL2以氧化銦錫(ITO)等透明導電膜形成。 在共通電極EL1及畫素電極EL2之間，填充有習知的液晶材料LC。 在玻璃基板40的非顯示面側B2設有偏光元件PL，在偏光元件PL上設有作為光源的背光70。背光70採用習知者。On the display surface side B1 of the glass substrate 40, a switching element TR formed of a thin film transistor (TFT) is formed in a matrix corresponding to each pixel. On the switching element TR, a pixel electrode EL2 is formed via a protective insulating film 80 Matrix. As the TFT, a conventional low temperature poly Si (LTPS) shape or an amorphous Si shape is used. On the non-display surface side B2 of the glass substrate 30, a common electrode EL1 facing the pixel electrode EL2 is formed. The common electrode EL1 and the pixel electrode EL2 are formed of a transparent conductive film such as indium tin oxide (ITO).之间 Between the common electrode EL1 and the pixel electrode EL2, a conventional liquid crystal material LC is filled.偏 A polarizing element PL is provided on the non-display surface side B2 of the glass substrate 40, and a backlight 70 as a light source is provided on the polarizing element PL. The backlight 70 is a conventional one.
在玻璃基板30的顯示面側B1，於顯示裝置的畫面的一部分形成配置成矩陣狀的光感測器PS的陣列。在本實施形態中，雖在每個畫素設置單一的光感測器PS，但並不以此為限，對一個畫素設置複數個光感測器PS也可以。藉由光感測器PS的陣列，能夠接收從顯示面側B1朝向非顯示面B2側通過彩色濾光器50的著色部50R、50G、50B的光並攝像彩色影像。藉由將實裝光感測器PS的玻璃基板30分別設置，能夠避免對相同基板的製程數增加時成為問題的良率降低。 如圖1A所示，來自背光70的光L，被放置於保護玻璃60上的手指FG所反射，該反射光通過彩色濾光器50的著色部50R、50G、50B入射至各光感測器PS。藉此，能攝像指紋的彩色影像。On the display surface side B1 of the glass substrate 30, an array of light sensors PS arranged in a matrix is formed on a part of the screen of the display device. In this embodiment, although a single light sensor PS is provided for each pixel, it is not limited to this, and a plurality of light sensors PS may be provided for one pixel. The array of light sensors PS can receive light passing through the colored portions 50R, 50G, and 50B of the color filter 50 from the display surface side B1 toward the non-display surface B2 side and capture a color image. By separately providing the glass substrates 30 on which the light sensors PS are mounted, it is possible to avoid a decrease in the yield that becomes a problem when the number of processes for the same substrate increases. As shown in FIG. 1A, the light L from the backlight 70 is reflected by a finger FG placed on the protective glass 60, and the reflected light is incident on each light sensor through the colored portions 50R, 50G, and 50B of the color filter 50. PS. Thereby, a color image of a fingerprint can be captured.
圖1D及圖1E表示單一光感測器PS的構造例。 圖1D及圖1E所示的光感測器PS為習知的雙閘極構造的TFT(薄膜電晶體)，121表示底閘極電極、122表示底閘極絕緣膜、123表示半導體膜、124表示通道保護膜、125表示雜質半導體膜、126表示雜質半導體膜、127表示源極電極、128表示汲極電極、129表示頂閘極絕緣膜、131表示頂閘極電極、142表示源極線、143表示汲極線、144表示頂閘極線。在圖1D中為了示出感測器內部構造而省略頂閘極電極131，但頂閘極電極131在俯視時與底閘極電極121具有大致相同的形狀。1D and FIG. 1E show a configuration example of a single light sensor PS. The photo sensor PS shown in FIGS. 1D and 1E is a conventional double-gate structure TFT (thin film transistor), 121 is a bottom gate electrode, 122 is a bottom gate insulating film, 123 is a semiconductor film, 124 Indicates a channel protection film, 125 indicates an impurity semiconductor film, 126 indicates an impurity semiconductor film, 127 indicates a source electrode, 128 indicates a drain electrode, 129 indicates a top gate insulating film, 131 indicates a top gate electrode, 142 indicates a source line, 143 indicates a drain line, and 144 indicates a top gate line. Although the top gate electrode 131 is omitted in FIG. 1D to show the internal structure of the sensor, the top gate electrode 131 has substantially the same shape as the bottom gate electrode 121 in a plan view.
光感測器PS為光電變換元件，具有：底閘極電極121、包夾底閘極電極121與層間絕緣膜122並對向於底閘極電極121的半導體膜123、形成於半導體膜123的中央部上的通道保護膜124、在半導體膜123的兩端部上相互間隔形成的雜質半導體膜125、126、形成於雜質半導體膜125上的源極電極127、形成於雜質半導體膜126上的汲極電極128、包夾半導體膜123與層間絕緣膜129及通道保護膜124並對向於半導體膜123的頂閘極電極131。The photo sensor PS is a photoelectric conversion element and includes a bottom gate electrode 121, a semiconductor film 123 sandwiching the bottom gate electrode 121 and the interlayer insulating film 122, and facing the bottom gate electrode 121, and a semiconductor film 123 formed on the semiconductor film 123. The channel protective film 124 on the central portion, the impurity semiconductor films 125 and 126 formed at intervals on both ends of the semiconductor film 123, the source electrode 127 formed on the impurity semiconductor film 125, and the source electrode 127 formed on the impurity semiconductor film 126. The drain electrode 128, the semiconductor film 123, the interlayer insulating film 129, and the channel protection film 124 are opposed to the top gate electrode 131 facing the semiconductor film 123.
底閘極電極121分別在每個光感測器PS以矩陣狀形成於上述玻璃基板30的顯示面側B1。在玻璃基板30的顯示面側B1，形成在橫方向延伸的底閘極線141，在橫方向配列的同一行的各光感測器PS的底閘極電極121與共通的底閘極線141成為一體而形成。底閘極電極121及底閘極線141具有導電性及遮光性，由Cr、Mo、Ta、W等絕緣性、遮光性的材料形成。藉由在底閘極電極121使用遮光性材料，防止從背光70向半導體膜123的光直接入射。The bottom gate electrode 121 is formed on the display surface side B1 of the glass substrate 30 in a matrix form for each photo sensor PS. On the display surface side B1 of the glass substrate 30, a bottom gate line 141 extending in the horizontal direction is formed, and the bottom gate electrode 121 and the common bottom gate line 141 of the photo sensors PS in the same row are arranged in the horizontal direction. Formed into one. The bottom gate electrode 121 and the bottom gate line 141 have conductivity and light-shielding properties, and are formed of insulating and light-shielding materials such as Cr, Mo, Ta, and W. By using a light-shielding material for the bottom gate electrode 121, light from the backlight 70 to the semiconductor film 123 is prevented from being directly incident.
在底閘極電極121及底閘極線141上，在全部的光感測器PS形成共通的層間絕緣膜122。層間絕緣膜122具有絕緣性及透光性，例如由氮化矽或氧化矽形成。A common interlayer insulating film 122 is formed on the bottom gate electrode 121 and the bottom gate line 141 in all the photo sensors PS. The interlayer insulating film 122 has insulation and light transmission properties, and is formed of, for example, silicon nitride or silicon oxide.
在層間絕緣膜122上，半導體膜123在每個光感測器PS形成。半導體膜123為以非晶矽或多晶矽形成的層。在半導體膜123上，形成通道保護膜124。通道保護膜124，具有保護用於圖案化的蝕刻破壞半導體膜123的界面的機能，具有絕緣性及透光性，例如由氮化矽或氧化矽形成。光L入射半導體膜123後在半導體膜123中被吸收，隨著光量變化的量的電子－電洞對在半導體膜123中產生，因應該電子－電洞對而半導體膜中的載體濃度產生變化，薄膜電晶體的傳導發生變化。以此方式，進行因應入射至薄膜電晶體的光量而作為電信號的變化而輸出的光電變換。On the interlayer insulating film 122, a semiconductor film 123 is formed on each photo sensor PS. The semiconductor film 123 is a layer formed of amorphous silicon or polycrystalline silicon. On the semiconductor film 123, a channel protection film 124 is formed. The channel protection film 124 has a function of protecting the interface of the semiconductor film 123 that is etched for patterning, and has insulation and light transmission properties, and is formed of, for example, silicon nitride or silicon oxide. The light L enters the semiconductor film 123 and is absorbed in the semiconductor film 123. The amount of electron-hole pairs generated with the change in the amount of light is generated in the semiconductor film 123. The carrier concentration in the semiconductor film changes according to the electron-hole pairs. The conductivity of the thin film transistor changes. In this way, photoelectric conversion is performed as a change in the electrical signal in response to the amount of light incident on the thin film transistor.
在半導體膜123的一端部上，雜質半導體膜125以重疊於一部分通道保護膜124的方式形成，在半導體膜123的另一端部上，雜質半導體膜126以重疊於一部分通道保護膜124的方式形成。雜質半導體膜125、126由包含n型雜質離子多晶矽形成。An impurity semiconductor film 125 is formed on one end portion of the semiconductor film 123 so as to overlap a portion of the channel protective film 124, and an impurity semiconductor film 126 is formed on the other end portion of the semiconductor film 123 so as to overlap a portion of the channel protective film 124. . The impurity semiconductor films 125 and 126 are formed of n-type impurity ion polycrystalline silicon.
在雜質半導體膜125上，形成圖案化的源極電極127。在雜質半導體膜126上，形成圖案化的汲極電極128。又，在縱方向延伸的源極線142及汲極線144形成於層間絕緣膜122上，在縱方向配列的同一列的各光感測器PS的源極電極127與共通的源極線142一體形成，在縱方向配列的同一列的各光感測器PS的汲極電極128與共通的汲極線143一體形成。源極電極127、汲極電極128、源極線142及汲極線143具有導電性及遮光性，由Cr、Mo、Ta、W等絕緣性、遮光性的材料形成。On the impurity semiconductor film 125, a patterned source electrode 127 is formed. On the impurity semiconductor film 126, a patterned drain electrode 128 is formed. Further, source lines 142 and drain lines 144 extending in the longitudinal direction are formed on the interlayer insulating film 122, and the source electrodes 127 and the common source lines 142 of the photo sensors PS in the same row arranged in the longitudinal direction are in common. It is integrally formed, and the drain electrodes 128 of the respective photosensors PS arranged in the same row in the vertical direction are integrally formed with the common drain line 143. The source electrode 127, the drain electrode 128, the source line 142, and the drain line 143 have conductivity and light-shielding properties, and are formed of insulating and light-shielding materials such as Cr, Mo, Ta, and W.
在光感測器PS的通道保護膜124、源極電極127及汲極電極128還有源極線142及汲極線143上，形成共通的層間絕緣膜129。層間絕緣膜129具有絕緣性及透光性，例如由氮化矽或氧化矽形成。A common interlayer insulating film 129 is formed on the channel protection film 124, the source electrode 127 and the drain electrode 128, and the source line 142 and the drain line 143 of the photo sensor PS. The interlayer insulating film 129 has insulation and light transmission properties, and is formed of, for example, silicon nitride or silicon oxide.
在層間絕緣膜129上，形成圖案化的頂閘極電極131。又，在層間絕緣膜129上形成在橫方向延伸的頂閘極線144，在橫方向配列的同一行的各光感測器PS的頂閘極電極131與共通的頂閘極線144一體形成。頂閘極電極131及頂閘極線144為具有導電性及透光性的金屬氧化物，例如，以氧化銦、氧化鋅、或者氧化錫或其等之中的至少一種混合物(例如，錫摻雜氧化銦(ITO)，鋅摻雜氧化銦)形成。On the interlayer insulating film 129, a patterned top gate electrode 131 is formed. Further, a top gate line 144 extending in the horizontal direction is formed on the interlayer insulating film 129, and the top gate electrode 131 of each photo sensor PS in the same row aligned in the horizontal direction is formed integrally with the common top gate line 144. . The top gate electrode 131 and the top gate line 144 are metal oxides having conductivity and translucency, for example, indium oxide, zinc oxide, or at least one mixture of tin oxide or the like (for example, tin doped) Heteroindium oxide (ITO), zinc-doped indium oxide).
在頂閘極電極131及頂閘極線144上，形成圖未示的共通的保護絕緣膜。保護絕緣膜具有絕緣性及透光性，例如由氮化矽或氧化矽形成。 如上述的方式構成的光感測器PS為將半導體膜123作為受光部的透明的光電變換元件。A common protective insulating film (not shown) is formed on the top gate electrode 131 and the top gate line 144. The protective insulating film has an insulating property and a light transmitting property, and is formed of, for example, silicon nitride or silicon oxide. The photo sensor PS configured as described above is a transparent photoelectric conversion element using the semiconductor film 123 as a light receiving section.
向上述玻璃基板20、30、40的各層的形成，可以藉由適宜進行習知的PVD法及CVD法的成膜工程、光微影法的遮罩工程、蝕刻法的薄膜形狀加工工程而形成。之後，將彩色濾光器50與光感測器PS相對向將玻璃基板20與玻璃基板30利用紫外光硬化樹脂等黏接劑貼合。對其貼合玻璃基板40，並經由注入液晶材料LC等的工程來製造顯示裝置1。 在這裡，示出成膜條件的一例。The formation of each of the layers on the glass substrates 20, 30, and 40 can be performed by a film formation process suitable for the conventional PVD method and CVD method, a masking process by a photolithography method, and a thin film shape processing process by an etching method. . After that, the color filter 50 and the light sensor PS are opposed to each other, and the glass substrate 20 and the glass substrate 30 are bonded together with an adhesive such as an ultraviolet curing resin. A glass substrate 40 is bonded to this, and a display device 1 is manufactured through a process of injecting a liquid crystal material LC or the like. Here, an example of film formation conditions is shown.
第2實施形態 圖2A~圖2C表示本發明的第2實施形態之顯示裝置1B。此外，在圖2A~圖2C中，關於與上述實施形態相同的構成部分，使用相同符號。 顯示裝置1B使用2枚玻璃基板20、40，在玻璃基板20的非顯示面B2側之面形成彩色濾光器50。 開關元件TR與光感測器PS形成於玻璃基板40的顯示面側B1的共通之面。 藉由將開關元件TR與光感測器PS形成於共通之面，能夠將光感測器PS配置於比彩色濾光器50還下方(非顯示面側B2)。又，也能使顯示裝置1B薄型化。Second Embodiment FIGS. 2A to 2C show a display device 1B according to a second embodiment of the present invention. In addition, in FIG. 2A to FIG. 2C, the same reference numerals are used for the same components as those in the above embodiment. The display device 1B uses two glass substrates 20 and 40, and a color filter 50 is formed on a surface on the non-display surface B2 side of the glass substrate 20. The switching element TR and the photo sensor PS are formed on a common surface of the display surface side B1 of the glass substrate 40.形成 By forming the switching element TR and the light sensor PS on a common surface, the light sensor PS can be disposed below the color filter 50 (non-display surface side B2). In addition, the display device 1B can be made thin.
第3實施形態 圖3A~圖3C表示本發明的第3實施形態之顯示裝置1C。此外，在圖3A~圖3C中，關於與上述實施形態相同的構成部分，使用相同符號。 顯示裝置1C使用2枚玻璃基板20、40。 在玻璃基板20的顯示面側B1之面形成彩色濾光器50，在非顯示面側B2之面形成光感測器PS。 玻璃基板40在顯示面側B1之面形成開關元件TR。 形成光感測器PS時，因為需要比使用有機樹脂材料的彩色濾光器50的形成工程還更高溫的熱處理，在彩色濾光器50之上難以直接形成光感測器PS，但藉由將彩色濾光器50與光感測器PS形成與玻璃基板20不同的面，能夠將光感測器PS配置於比彩色濾光器50還下方(非顯示面側B2)。又，也能使顯示裝置1C薄型化。Third Embodiment FIG. 3A to FIG. 3C show a display device 1C according to a third embodiment of the present invention. In addition, in FIG. 3A to FIG. 3C, the same reference numerals are used for the same components as those in the above embodiment. The display device 1C uses two glass substrates 20 and 40. (2) A color filter 50 is formed on the surface of the display surface side B1 of the glass substrate 20, and a light sensor PS is formed on the surface of the non-display surface side B2. The glass substrate 40 forms a switching element TR on the surface of the display surface side B1. When forming the light sensor PS, it is difficult to form the light sensor PS directly on top of the color filter 50 because a higher temperature heat treatment is required than the formation process of the color filter 50 using an organic resin material. By forming the color filter 50 and the light sensor PS on a different surface from the glass substrate 20, the light sensor PS can be disposed below the color filter 50 (non-display surface side B2). In addition, the display device 1C can be made thin.
第4實施形態 圖4A~圖4C表示本發明的第4實施形態之顯示裝置1D。此外，在圖4A~圖4C中，關於與上述實施形態相同的構成部分，使用相同符號。 顯示裝置1D使用2枚玻璃基板20、40。 玻璃基板40在顯示面側B1之面形成開關元件TR。 在玻璃基板20的顯示面側B1之面形成彩色濾光器50的黑矩陣BM，在黑矩陣BM上形成光感測器PS。再來，以覆蓋黑矩陣BM及光感測器PS的方式形成彩色濾光器50的著色部50R、50G、50B。由圖4A及圖4B可得知，光感測器PS在厚度方向B1及B2，形成於彩色濾光器50的著色部50R、50G、50B與黑矩陣BM之間。 將表上述中的構造由以下的方式形成。首先，在玻璃基板20以耐熱性的金屬鉻膜等形成彩色濾光器50的黑矩陣BM後，在該黑矩陣BM上形成光感測器PS。之後，以覆蓋黑矩陣BM及光感測器PS的方式塗佈用以形成著色部的彩色光阻材料，利用光微影技術分別將著色層50R、50G、50B圖案化。 根據該種製造方法，在彩色濾光器50的著色部50R、50G、50B的正下方形成光感測器PS的同時，能夠避免來自背光70的光入射至光感測器PS。又，在通常的液晶顯示器中因為由被矩陣BM遮光的部分也配置有光感測器PS，能夠避免追加光感測器PS所造成的液晶顯示器的開口率降低。Fourth Embodiment FIG. 4A to FIG. 4C show a display device 1D according to a fourth embodiment of the present invention. In addition, in Figs. 4A to 4C, the same reference numerals are used for the same components as those in the above-mentioned embodiment. The display device 1D uses two glass substrates 20 and 40. The glass substrate 40 forms a switching element TR on the surface of the display surface side B1.形成 A black matrix BM of the color filter 50 is formed on the display surface side B1 of the glass substrate 20, and a photo sensor PS is formed on the black matrix BM. Then, the colored portions 50R, 50G, and 50B of the color filter 50 are formed so as to cover the black matrix BM and the light sensor PS. As can be seen from FIGS. 4A and 4B, the light sensor PS is formed between the colored portions 50R, 50G, and 50B of the color filter 50 in the thickness directions B1 and B2 and the black matrix BM. The structure described above is formed in the following manner. First, the black matrix BM of the color filter 50 is formed on the glass substrate 20 with a heat-resistant metal chromium film or the like, and then a photo sensor PS is formed on the black matrix BM. Thereafter, a color photoresist material for forming a colored portion is coated in a manner covering the black matrix BM and the light sensor PS, and the photolithography technology is used to pattern the colored layers 50R, 50G, and 50B, respectively. According to this manufacturing method, the light sensor PS is formed directly under the colored portions 50R, 50G, and 50B of the color filter 50, and the light from the backlight 70 can be prevented from entering the light sensor PS. In addition, in a normal liquid crystal display, a light sensor PS is also disposed in a portion shielded by the matrix BM, and it is possible to avoid a decrease in the aperture ratio of the liquid crystal display caused by the addition of the light sensor PS.
第5實施形態 圖5A~圖5C表示本發明的第5實施形態之顯示裝置1E。此外，在圖5A~圖5C中，關於與上述實施形態相同的構成部分，使用相同符號。 顯示裝置1E使用2枚玻璃基板20、40。 玻璃基板40在顯示面側B1之面形成開關元件TR。 在玻璃基板20的顯示面側B1之面形成有光感測器PS。以覆蓋光感測器PS的方式形成保護絕緣膜81。在保護絕緣膜81上，黑矩陣BM以覆蓋光感測器PS的方式形成。 接著，在厚度方向B1、B2，黑矩陣BM的光感測器PS的上方區域形成有開口部OP。藉此，將光感測器PS配置於彩色濾光器50的著色部50R、50G、50B的正下方。 在通常的液晶顯示器中因為由被矩陣BM遮光的部分也配置有光感測器PS，能夠避免追加光感測器PS所造成的液晶顯示器的開口率降低。Fifth Embodiment FIGS. 5A to 5C show a display device 1E according to a fifth embodiment of the present invention. In addition, in FIG. 5A to FIG. 5C, the same reference numerals are used for the same components as those in the above-mentioned embodiment. The display device 1E uses two glass substrates 20 and 40. The glass substrate 40 forms a switching element TR on the surface of the display surface side B1.光 A photo sensor PS is formed on the surface of the display surface side B1 of the glass substrate 20. A protective insulating film 81 is formed so as to cover the photo sensor PS. On the protective insulating film 81, a black matrix BM is formed so as to cover the photo sensor PS. Next, in the thickness directions B1 and B2, an opening OP is formed in a region above the photo sensor PS of the black matrix BM. As a result, the photo sensor PS is disposed directly below the colored portions 50R, 50G, and 50B of the color filter 50. (2) In a normal liquid crystal display, a light sensor PS is also disposed in a portion shielded by the matrix BM, which can prevent a decrease in the aperture ratio of the liquid crystal display caused by the additional light sensor PS.
第6實施形態 圖6A~圖6C表示本發明的第6實施形態之顯示裝置1F。此外，在圖6A~圖6C中，關於與上述實施形態相同的構成部分，使用相同符號。 顯示裝置1F使用1枚玻璃基板40。 在玻璃基板40的顯示面側B1的共通面形成有開關元件TR及光感測器PS。以覆蓋開關元件TR及光感測器PS的方式形成保護絕緣膜80，在保護絕緣膜80上隔介著畫素電極EL2形成由有機發光二極體(OLED)形成的發光層90。發光層90藉由黑矩陣BM在每個畫素分離，並發白色光。 黑矩陣BM隔介著保護絕緣膜80以覆蓋光感測器PS的方式形成。接著，在厚度方向B1、B2，黑矩陣BM的光感測器PS的上方區域形成有開口部OP。 因此，即便使用OLED時，也能夠提供能彩色攝像的顯示裝置。Sixth Embodiment Figs. 6A to 6C show a display device 1F according to a sixth embodiment of the present invention. In addition, in FIG. 6A to FIG. 6C, the same reference numerals are used for the same components as those in the above-mentioned embodiment. The display device 1F uses one glass substrate 40. The switching element TR and the photo sensor PS are formed on a common surface of the display surface side B1 of the glass substrate 40. A protective insulating film 80 is formed so as to cover the switching element TR and the light sensor PS. A light emitting layer 90 made of an organic light emitting diode (OLED) is formed on the protective insulating film 80 via a pixel electrode EL2. The light emitting layer 90 is separated at each pixel by the black matrix BM and emits white light. The black matrix BM is formed so as to cover the photo sensor PS via a protective insulating film 80. Next, in the thickness directions B1 and B2, an opening OP is formed in a region above the photo sensor PS of the black matrix BM. Therefore, even when OLED is used, a display device capable of color imaging can be provided.
在以上的實施例中雖使用特定的方式進行說明，但作為液晶顯示器的方式取代TN方式利用IPS方式或VA方式等、或作為驅動方式取代主動矩陣式方式利用被動矩陣方式等也可以。In the above embodiments, although a specific method is used for description, a liquid crystal display method may be used instead of the TN method using the IPS method or the VA method, or the driving method may be used instead of the active matrix method using the passive matrix method.
1、1B～1F‧‧‧顯示裝置1. 1B ～ 1F‧‧‧ display device
20‧‧‧玻璃基板(透明基板)20‧‧‧ glass substrate (transparent substrate)
30‧‧‧玻璃基板(透明基板)30‧‧‧ glass substrate (transparent substrate)
40‧‧‧玻璃基板(透明基板)40‧‧‧ glass substrate (transparent substrate)
50‧‧‧彩色濾光器50‧‧‧ color filter
50R、50G、50B‧‧‧著色部 50R, 50G, 50B‧‧‧Coloring Department
BM‧‧‧黑矩陣BM‧‧‧ Black Matrix
60‧‧‧保護玻璃60‧‧‧Protection glass
70‧‧‧背光70‧‧‧ backlight
80、81‧‧‧保護絕緣層80, 81‧‧‧ Protective insulation
90‧‧‧發光層90‧‧‧ luminescent layer
EL1‧‧‧共通電極EL1‧‧‧Common electrode
EL2‧‧‧畫素電極EL2‧‧‧pixel electrode
PL‧‧‧偏光元件PL‧‧‧ Polarizing Element
TR‧‧‧開關元件TR‧‧‧Switch element
LC‧‧‧液晶材料LC‧‧‧ Liquid crystal material
121‧‧‧底閘極電極121‧‧‧ bottom gate electrode
122‧‧‧底閘極絕緣膜122‧‧‧ bottom gate insulation film
123‧‧‧半導體膜123‧‧‧Semiconductor film
124‧‧‧通道保護膜124‧‧‧channel protection film
125‧‧‧雜質半導體膜125‧‧‧ impurity semiconductor film
126‧‧‧雜質半導體膜126‧‧‧ impurity semiconductor film
127‧‧‧源極電極127‧‧‧Source electrode
128‧‧‧汲極電極128‧‧‧ Drain electrode
129‧‧‧頂閘極絕緣膜129‧‧‧Top gate insulation film
131‧‧‧頂閘極電極131‧‧‧Top gate electrode
142‧‧‧源極線142‧‧‧Source Line
143‧‧‧汲極線143‧‧‧ Drain Line
144‧‧‧頂閘極線144‧‧‧Top gate line
[圖1A]本發明的第1實施形態之顯示裝置的剖面圖。 [圖1B]與圖1A垂直的方向的剖面圖。 [圖1C]從圖1A的顯示裝置的顯示面側觀察的平面圖。 [圖1D]表示光感測器的構造例的平面圖。 [圖1E]沿圖1D的1E－1E線的剖面圖。 [圖2A]本發明的第2實施形態之顯示裝置的剖面圖。 [圖2B]與圖2A的剖面垂直的方向的剖面圖。 [圖2C]從圖2A的顯示裝置的顯示面側觀察的平面圖。 [圖3A]本發明的第3實施形態之顯示裝置的剖面圖。 [圖3B]與圖3A的剖面垂直的方向的剖面圖。 [圖3C]從圖3A的顯示裝置的顯示面側觀察的平面圖。 [圖4A]本發明的第4實施形態之顯示裝置的剖面圖。 [圖4B]與圖4A的剖面垂直的方向的剖面圖。 [圖4C]從圖4A的顯示裝置的顯示面側觀察的平面圖。 [圖5A]本發明的第5實施形態之顯示裝置的剖面圖。 [圖5B]與圖5A的剖面垂直的方向的剖面圖。 [圖5C]從圖5A的顯示裝置的顯示面側觀察的平面圖。 [圖6A]本發明的第6實施形態之顯示裝置的剖面圖。 [圖6B]與圖6A的剖面垂直的方向的剖面圖。 [圖6C]從圖6A的顯示裝置的顯示面側觀察的平面圖。[FIG. 1A] A sectional view of a display device according to a first embodiment of the present invention. [Fig. 1B] A sectional view in a direction perpendicular to Fig. 1A. [FIG. 1C] A plan view viewed from the display surface side of the display device of FIG. 1A. [Fig. 1D] A plan view showing a configuration example of the light sensor. [Fig. 1E] A sectional view taken along line 1E-1E of Fig. 1D. [FIG. 2A] A sectional view of a display device according to a second embodiment of the present invention. [FIG. 2B] A cross-sectional view in a direction perpendicular to the cross-section of FIG. 2A. [FIG. 2C] A plan view viewed from the display surface side of the display device of FIG. 2A. [FIG. 3A] A sectional view of a display device according to a third embodiment of the present invention. [FIG. 3B] A cross-sectional view in a direction perpendicular to the cross-section of FIG. 3A. [FIG. 3C] A plan view viewed from the display surface side of the display device of FIG. 3A. [FIG. 4A] A sectional view of a display device according to a fourth embodiment of the present invention. [FIG. 4B] A cross-sectional view in a direction perpendicular to the cross-section of FIG. 4A. [FIG. 4C] A plan view viewed from the display surface side of the display device of FIG. 4A. [FIG. 5A] A sectional view of a display device according to a fifth embodiment of the present invention. [FIG. 5B] A cross-sectional view in a direction perpendicular to the cross-section of FIG. 5A. [FIG. 5C] A plan view viewed from the display surface side of the display device of FIG. 5A. [FIG. 6A] A sectional view of a display device according to a sixth embodiment of the present invention. [FIG. 6B] A cross-sectional view in a direction perpendicular to the cross-section of FIG. 6A. [FIG. 6C] A plan view viewed from the display surface side of the display device of FIG. 6A.
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