TWI662389B - Gas flow control device, gas flow control method, and semiconductor etching equipment - Google Patents
Gas flow control device, gas flow control method, and semiconductor etching equipment Download PDFInfo
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Abstract
一種氣體流量控制裝置、氣體流量控制方法及半導體蝕刻設備，氣體流量控制裝置包含劃分為圓形進氣區域和至少一個同心設置的環形進氣區域的氣體噴淋頭，每一個環形進氣區域又包含多個扇形區域，圓形進氣區域和每一個扇形區域都具有供氣通道，圓形進氣區域和每一個扇形區域上都設置多個氣體通孔，每個供氣通道連接一個氣體管路，每個氣體管路通過流量控制器連接到氣源，每個氣體管路上設置電子開關閥門，通過控制環形進氣區域上所有氣體管路上的電子開關閥門輪流開啟或關閉，來控制環形進氣區域上的氣體流量。本發明通過控制氣體管路的開啟或關閉的時間來控制氣體流量，可以較為精準地控制氣量，從而對蝕刻不均勻進行有效補償，而且用較為簡單的開關閥門來代替流量控制器，極大地節省了成本。 A gas flow control device, a gas flow control method, and a semiconductor etching device. The gas flow control device includes a gas shower head that is divided into a circular air inlet area and at least one concentrically arranged annular air inlet area. Containing multiple fan-shaped areas, the circular air-in area and each fan-shaped area have air supply channels. The circular air-in area and each fan-shaped area are provided with multiple gas through holes, and each air-supply channel is connected to a gas tube. Each gas pipeline is connected to the gas source through a flow controller. Electronic switching valves are set on each gas pipeline. The electronic inlet and outlet valves on all gas pipelines in the annular inlet area are controlled to open or close in turn to control the annular inlet. Gas flow over the gas area. The invention controls the gas flow rate by controlling the opening or closing time of the gas pipeline, which can accurately control the gas volume, thereby effectively compensating for uneven etching, and using a simpler on-off valve to replace the flow controller, which greatly saves Cost.
Description
本發明涉及半導體蝕刻領域，尤其涉及一種用於蝕刻設備的氣體流量控制裝置、氣體流量控制方法及半導體蝕刻設備。 The invention relates to the field of semiconductor etching, and in particular, to a gas flow control device, a gas flow control method, and a semiconductor etching device for an etching device.
在半導體蝕刻設備中，通過氣體噴淋頭將氣體引入反應腔中，電離形成等離子體對晶片進行蝕刻，為了保證蝕刻均勻性，通常將氣體噴淋頭劃分為多個同心環，每個環形進氣區域分別通入氣體，利用流量控制器(MFC)來控制通入每個環形進氣區域的氣體流量。這種方式實現了在徑向上的氣量均勻性控制，但是針對同一個環形進氣區域，需要在360°圓周上的不同區域之間供應不同流量的反應氣體，以補償其它原因導致的蝕刻不均一性，這種在同一個圓環內不同扇形區域間精確控制氣流比例很難實現。如果利用固定參數的限流閥(Orifice)則無法進行有效的動態調控，另外如果不同區域的氣體流量控制完全通過多個獨立MFC實現，針對氣量較小的情況，MFC難以保證較高的精度，並且多個互相並聯的MFC會互相干擾，所以難以保持每個氣體管路中的氣體的壓力穩定，最終導致氣量難以精準控制，從而導致蝕刻不均勻，再者，大規模使用MFC也大大增加了成本。 In semiconductor etching equipment, the gas is introduced into the reaction chamber through a gas shower head, and the wafer is etched by ionization to form a plasma. In order to ensure the uniformity of the etching, the gas shower head is usually divided into multiple concentric rings, each ring Gas is introduced into the gas area separately, and a flow controller (MFC) is used to control the gas flow into each annular air inlet area. In this way, the uniformity control of the gas volume in the radial direction is achieved, but for the same annular air intake region, different flow of reactive gas needs to be supplied between different regions on the 360 ° circumference to compensate for uneven etching caused by other reasons This kind of precise control of the airflow ratio between different fan-shaped regions in the same ring is difficult to achieve. If a fixed parameter restrictor valve (Orifice) is used, effective dynamic regulation cannot be performed. In addition, if the gas flow control in different areas is completely implemented by multiple independent MFCs, it is difficult for MFCs to guarantee high accuracy for small gas volumes. And multiple MFCs connected in parallel will interfere with each other, so it is difficult to keep the pressure of the gas in each gas pipeline stable, and eventually it is difficult to accurately control the gas volume, which leads to uneven etching. Furthermore, the large-scale use of MFC has also greatly increased. cost.
本發明提供一種氣體流量控制裝置、氣體流量控制方法及半導體蝕刻設備，通過控制氣體管路的開啟或關閉的時間來控制氣體流量，可以較為精準地控制氣量，從而對蝕刻不均勻進行有效補償，而且用較為簡單的開關閥門來代替流量控制器，極大地節省了成本。 The present invention provides a gas flow control device, a gas flow control method, and a semiconductor etching device. By controlling the opening or closing time of a gas pipeline to control the gas flow, the gas volume can be controlled more accurately, thereby effectively compensating for uneven etching. Moreover, a simpler on-off valve is used to replace the flow controller, which greatly saves costs.
為了達到上述目的，本發明提供一種氣體流量控制裝置，該氣體流量控制裝置設置在半導體蝕刻設備上，所述的氣體流量控制裝置包含：氣體噴淋頭，其設置在半導體蝕刻設備的反應腔內部，位於晶片上方，該氣體噴淋頭包含圓形進氣區域和至少一個同心設置的環形進氣區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，每一個扇形區域都具有一個供氣通道；多個氣體管路，其分別連接氣體噴淋頭上的多個扇形區域對應的多個供氣通道；多個電子開關閥門，其分別設置在每一個氣體管路上，每一個電子開關閥門都連接控制器，用於控制氣體管路的通斷；一個流量控制器，其包含一個輸出端聯通到環形進氣區域上的所有氣體管路，用於控制提供給環形進氣區域的總氣量；氣源，其管路連接所述流量控制器，用於提供反應氣體； 所述控制器控制所述每一個電子開關閥門交替通斷，使得反應氣體流入不同扇形區域的流量比例與各個扇形區域對應的電子開關閥門的開通時間成正比。 In order to achieve the above object, the present invention provides a gas flow control device, which is disposed on a semiconductor etching equipment. The gas flow control device includes a gas shower head which is disposed inside a reaction chamber of the semiconductor etching equipment. Located above the wafer, the gas shower head includes a circular air inlet area and at least one annular air inlet area arranged concentrically, the circular air inlet area and the circular air inlet area are isolated from each other, and the circular air inlet area and the circular air inlet area The lower surface of the air intake area contains multiple gas through holes for the reaction gas. Each annular air intake area contains multiple sector areas. The different sector areas are isolated from each other. Each sector area has a gas supply. Channel; multiple gas pipelines, which are respectively connected to multiple gas supply channels corresponding to multiple fan-shaped areas on the gas shower head; multiple electronic on-off valves, which are respectively arranged on each gas pipeline, and each electronic on-off valve is Connected to the controller to control the on-off of the gas pipeline; a flow controller that contains an output connected to the All shaped inlet gas on the gas line area for controlling the intake air supplied to the annular region of the total gas; gas source, which line is connected to the flow controller for supplying a reaction gas; The controller controls each of the electronic switching valves to be alternately turned on and off, so that the flow rate of the reaction gas flowing into the different sector regions is proportional to the opening time of the electronic switching valve corresponding to each sector region.
所述的氣體噴淋頭上的環形進氣區域的數量大於等於2個，每一個環形進氣區域上的扇形區域的數量大於等於2個，圓形進氣區域和每一個扇形區域上的氣體通孔的數量大於等於2個，且氣體通孔的位置均勻分佈。 The number of annular air inlet regions on the gas shower head is greater than or equal to two, and the number of fan-shaped regions on each annular air inlet region is greater than or equal to two. The number of holes is 2 or more, and the positions of the gas through holes are evenly distributed.
本發明還提供一種氣體流量控制裝置，該氣體流量控制裝置設置在半導體蝕刻設備上，所述的氣體流量控制裝置包含：氣體噴淋頭，其設置在半導體蝕刻設備的反應腔內部，位於晶片上方，該氣體噴淋頭包含圓形進氣區域和至少一個同心設置的環形進氣區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，圓形進氣區域每一個扇形區域都具有一個供氣通道圓形進氣區域扇形區域；多個氣體管路，其分別連接氣體噴淋頭上的多個扇形區域對應的多個供氣通道；多個電子開關閥門，其分別設置在每一個氣體管路上，每一個電子開關閥門都連接控制器，用於控制氣體管路的通斷；多個限流器，其分別設置在每一個氣體管路上，用於保證氣體管路上的流量穩定； 一個流量控制器，其包含一個輸出端聯通到環形進氣區域上的所有氣體管路，用於控制提供給環形進氣區域的總氣量；氣源，其管路連接所述流量控制器，用於提供反應氣體；所述控制器控制所述每一個電子開關閥門交替通斷，使得反應氣體流入不同扇形區域的流量比例與各個扇形區域對應的電子開關閥門的開通時間成正比。 The present invention also provides a gas flow control device. The gas flow control device is provided on a semiconductor etching device. The gas flow control device includes a gas shower head which is disposed inside a reaction chamber of the semiconductor etching device and is located above a wafer. The gas shower head includes a circular air intake area and at least one concentric annular air intake area, the circular air intake area and the circular air intake area are isolated from each other, and The lower surface contains multiple gas through holes for the reaction gas, and each ring-shaped air inlet area contains multiple fan-shaped areas. Different fan-shaped areas are isolated from each other. Each fan-shaped area of the circular air-in area has a supply area. Fan-shaped area of circular air inlet area of gas channel; multiple gas pipelines, which are respectively connected to multiple gas supply channels corresponding to multiple fan-shaped areas on the gas shower head; multiple electronic on-off valves, which are respectively arranged on each gas tube On the road, each electronic on-off valve is connected to a controller for controlling the on-off of the gas pipeline; multiple flow restrictors, which are set separately Each of the gas pipeline, to ensure the stability of the flow of the gas pipeline; A flow controller including all gas lines with an output end connected to the ring-shaped air inlet area, for controlling the total amount of gas provided to the ring-shaped air inlet area; an air source, the lines of which are connected to the flow controller, and The controller controls each of the electronic switch valves to be switched on and off alternately, so that the flow rate of the reaction gas flowing into the different sector regions is proportional to the opening time of the electronic switch valves corresponding to each sector region.
所述的氣體噴淋頭上的環形進氣區域的數量大於等於2個，每一個環形進氣區域上的扇形區域的數量大於等於2個，圓形進氣區域和每一個扇形區域上的氣體通孔的數量大於等於2個，且氣體通孔的位置均勻分佈。 The number of annular air inlet regions on the gas shower head is greater than or equal to two, and the number of fan-shaped regions on each annular air inlet region is greater than or equal to two. The number of holes is 2 or more, and the positions of the gas through holes are evenly distributed.
本發明還提供一種氣體流量控制方法，利用氣體流量控制裝置實現對每一個環形進氣區域的氣體流量控制，連接環形進氣區域的流量控制器控制提供給該環形進氣區域的總氣量，控制器控制環形進氣區域上所有氣體管路上的電子開關閥門輪流開啟，同一時間內，只允許一個電子開關閥門開啟。 The invention also provides a gas flow control method. The gas flow control device is used to realize the gas flow control of each annular intake area. The flow controller connected to the annular intake area controls the total amount of gas provided to the annular intake area. The electronic control valves on all gas lines on the annular inlet area are opened in turn. Only one electronic switch valve is allowed to open at a time.
本發明還提供一種氣體流量控制方法，利用氣體流量控制裝置實現對每一個環形進氣區域的氣體流量控制，連接環形進氣區域的流量控制器控制提供給該環形進氣區域的總氣量，控制器控制環形進氣區域上所有氣體管路上的電子開關閥門輪流關閉，同一時間內，只允許一個電子開關閥門關閉。 The invention also provides a gas flow control method. The gas flow control device is used to realize the gas flow control of each annular intake area. The flow controller connected to the annular intake area controls the total amount of gas provided to the annular intake area. The electronic control valves on all gas lines on the annular inlet area are closed in turn. At the same time, only one electronic switch valve is allowed to close.
本發明還提供一種半導體蝕刻設備，包含：反應腔； 氣體噴淋頭，其設置在半導體蝕刻設備的反應腔內部，位於晶片上方，該氣體噴淋頭包含圓形進氣區域和至少一個同心設置的環形進氣區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，圓形進氣區域每一個扇形區域都具有一個供氣通道圓形進氣區域扇形區域；多個氣體管路，其分別連接氣體噴淋頭上的多個扇形區域對應的多個供氣通道；多個電子開關閥門，其分別設置在每一個氣體管路上，每一個電子開關閥門都連接控制器，用於控制氣體管路的通斷；一個流量控制器，其包含一個輸出端聯通到環形進氣區域上的所有氣體管路，用於控制提供給環形進氣區域的總氣量；氣源，其管路連接所述流量控制器，用於提供反應氣體。 The invention also provides a semiconductor etching equipment, comprising: a reaction chamber; A gas shower head, which is arranged inside a reaction chamber of a semiconductor etching device and is located above a wafer. The gas shower head includes a circular air inlet area and at least one annular air inlet area arranged concentrically, the circular air inlet area and The annular air inlet area is isolated from each other, and the lower surface of the circular air inlet area and the annular air inlet area contains a plurality of gas through holes for the reaction gas, and each annular air inlet area includes a plurality of fan-shaped areas with different fan shapes. The areas are isolated from each other. Each fan-shaped area of the circular air inlet area has a fan-shaped area of the circular air-supply area of the air supply channel. Multiple gas pipelines are connected to the corresponding multiple fan-shaped areas on the gas shower head. Gas supply channels; multiple electronic on-off valves, which are respectively set on each gas pipeline, each electronic on-off valve is connected to a controller for controlling the on-off of the gas pipeline; a flow controller, which contains an output All gas pipelines connected to the annular intake area are used to control the total amount of gas provided to the annular intake area; the gas source, whose pipeline is connected to the flow A controller for the reactive gas.
所述的氣體噴淋頭上的環形進氣區域的數量大於等於2個，每一個環形進氣區域上的扇形區域的數量大於等於2個，圓形進氣區域和每一個扇形區域上的氣體通孔的數量大於等於2個，且氣體通孔的位置均勻分佈。 The number of annular air inlet regions on the gas shower head is greater than or equal to two, and the number of fan-shaped regions on each annular air inlet region is greater than or equal to two. The number of holes is 2 or more, and the positions of the gas through holes are evenly distributed.
本發明還提供一種半導體蝕刻設備，包含：反應腔；氣體噴淋頭，其設置在半導體蝕刻設備的反應腔內部，位於晶片上方，該氣體噴淋頭包含圓形進氣區域和至少一個同心設置的環形進氣 區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，圓形進氣區域每一個扇形區域都具有一個供氣通道圓形進氣區域扇形區域；多個氣體管路，其分別連接氣體噴淋頭上的多個扇形區域對應的多個供氣通道；多個電子開關閥門，其分別設置在每一個氣體管路上，每一個電子開關閥門都連接控制器，用於控制氣體管路的通斷；多個限流器，其分別設置在每一個氣體管路上，用於保證氣體管路上的流量穩定；一個流量控制器，其包含一個輸出端聯通到環形進氣區域上的所有氣體管路，用於控制提供給環形進氣區域的總氣量；氣源，其管路連接所述流量控制器，用於提供反應氣體。 The invention also provides a semiconductor etching device, comprising: a reaction chamber; a gas shower head, which is arranged inside the reaction chamber of the semiconductor etching device and is located above the wafer; the gas shower head includes a circular air inlet region and at least one concentric arrangement Annular air intake Area, the circular air inlet area and the circular air inlet area are isolated from each other, and the lower surface of the circular air inlet area and the circular air inlet area includes a plurality of gas through holes for introducing reaction gas, and each circular air inlet area It also contains multiple fan-shaped areas, and the different fan-shaped areas are isolated from each other. Each fan-shaped area of the circular air-in area has an air supply channel. The fan-shaped area of the circular air-in area; Multiple gas supply channels corresponding to multiple fan-shaped areas on the shower head; multiple electronic on-off valves are respectively arranged on each gas pipeline, and each electronic on-off valve is connected to a controller for controlling the on-off of the gas pipeline ; Multiple flow restrictors, which are respectively arranged on each gas pipeline, to ensure stable flow on the gas pipeline; a flow controller, which includes an output end connected to all gas pipelines on the annular inlet area, It is used to control the total amount of gas provided to the annular air intake area; an air source whose pipeline is connected to the flow controller is used to provide a reaction gas.
所述的氣體噴淋頭上的環形進氣區域的數量大於等於2個，每一個環形進氣區域上的扇形區域的數量大於等於2個，圓形進氣區域和每一個扇形區域上的氣體通孔的數量大於等於2個，且氣體通孔的位置均勻分佈。 The number of annular air inlet regions on the gas shower head is greater than or equal to two, and the number of fan-shaped regions on each annular air inlet region is greater than or equal to two. The number of holes is 2 or more, and the positions of the gas through holes are evenly distributed.
本發明通過控制氣體管路的開啟或關閉的時間來控制氣體流量，可以較為精準地控制氣量，從而對蝕刻不均勻進行有效補償，而且用較為簡單的開關閥門來代替流量控制器，極大地節省了成本。 The invention controls the gas flow rate by controlling the opening or closing time of the gas pipeline, which can accurately control the gas volume, thereby effectively compensating for uneven etching, and using a simpler on-off valve to replace the flow controller, which greatly saves Cost.
1‧‧‧反應腔 1‧‧‧ reaction chamber
2‧‧‧晶片 2‧‧‧Chip
3‧‧‧氣體噴淋頭 3‧‧‧Gas shower head
301‧‧‧圓形進氣區域 301‧‧‧ circular air intake area
3021‧‧‧第一扇形區域 3021‧‧‧First sector
3022‧‧‧第二扇形區域 3022‧‧‧Second sector
3023‧‧‧第三扇形區域 3023‧‧‧ Third sector
3024‧‧‧第四扇形區域 3024‧‧‧Fourth sector
303‧‧‧第一環形進氣區域和第二環形進氣區域 303‧‧‧first annular air intake area and second annular air intake area
4‧‧‧氣體通孔 4‧‧‧Gas through hole
5‧‧‧氣體管路 5‧‧‧Gas pipeline
501‧‧‧第一氣體管路 501‧‧‧first gas pipeline
502‧‧‧第二氣體管路 502‧‧‧Second gas line
503‧‧‧第三氣體管路 503‧‧‧third gas pipeline
504‧‧‧第四氣體管路 504‧‧‧Fourth gas pipeline
6‧‧‧電子開關閥門 6‧‧‧electronic switch valve
601‧‧‧第一電子開關閥門 601‧‧‧The first electronic switch valve
602‧‧‧第二電子開關閥門 602‧‧‧Second Electronic Switch Valve
603‧‧‧第三電子開關閥門 603‧‧‧The third electronic switch valve
604‧‧‧第四電子開關閥門 604‧‧‧The fourth electronic switch valve
7‧‧‧流量控制器 7‧‧‧Flow Controller
701‧‧‧第一流量控制器 701‧‧‧First Flow Controller
8‧‧‧氣源 8‧‧‧Air source
9‧‧‧限流器 9‧‧‧ current limiter
圖1是本發明提供的一種氣體流量控制裝置的結構示意圖。 FIG. 1 is a schematic structural diagram of a gas flow control device provided by the present invention.
圖2是本發明的一個實施例中的氣體流量控制裝置的俯視圖。 FIG. 2 is a plan view of a gas flow control device according to an embodiment of the present invention.
以下根據圖1和圖2，具體說明本發明的較佳實施例。 Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 and 2.
本發明提供一種氣體流量控制裝置，其設置在半導體蝕刻設備上，用於實現對反應氣體的流量分配。 The invention provides a gas flow control device, which is arranged on a semiconductor etching equipment and is used to realize the flow distribution of a reaction gas.
如圖1所示，所述的氣體流量控制裝置包含：氣體噴淋頭3，其設置在半導體蝕刻設備的反應腔1內部，位於晶片2上方，該氣體噴淋頭3包含圓形進氣區域和至少一個同心設置的環形進氣區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔4用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，圓形進氣區域和每一個扇形區域都具有一個供氣通道；多個氣體管路5，其分別連接氣體噴淋頭3上的多個扇形區域對應的多個供氣通道；多個電子開關閥門6，其分別設置在每一個氣體管路5上，每一個電子開關閥門6都連接控制器(圖中未顯示)，用於控制氣體管路5的通斷；多個流量控制器(MFC)7，每一個環形進氣區域都對應設置一個流量控制器7，該流量控制器7連接同一個環形進氣區域上的所有氣體管路5，用於控制提供給環形進氣區域的總氣量，圓形進氣區域上也可 以對應設置一個流量控制器7，該流量控制器7連接圓形進氣區域上的氣體管路5，用於控制提供給圓形進氣區域的總氣量；氣源8，其管路連接所有的流量控制器7，用於提供反應氣體。 As shown in FIG. 1, the gas flow control device includes: a gas shower head 3, which is disposed inside a reaction chamber 1 of a semiconductor etching device and is located above a wafer 2. The gas shower head 3 includes a circular air inlet region And at least one concentric annular air intake region, the circular air intake region and the annular air intake region are isolated from each other, and the lower surface of the circular air intake region and the annular air intake region includes a plurality of gas through holes 4 for communicating Into the reaction gas, each ring-shaped air inlet area contains multiple fan-shaped areas, and the different fan-shaped areas are isolated from each other. The circular air inlet area and each fan-shaped area have a gas supply channel; multiple gas pipelines 5, It is respectively connected to a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas shower head 3; a plurality of electronic on-off valves 6 are respectively arranged on each gas pipeline 5, and each electronic on-off valve 6 is connected and controlled (Not shown) for controlling the on-off of the gas pipeline 5; multiple flow controllers (MFC) 7, each of which is provided with a flow controller 7 corresponding to the annular air inlet area, the flow controller 7 is connected the same one All gas lines 5 in the annular air intake area are used to control the total amount of air supplied to the annular air intake area. A flow controller 7 is provided correspondingly. The flow controller 7 is connected to the gas line 5 on the circular air intake area, and is used to control the total amount of gas provided to the circular air intake area. The air source 8 is connected to all the pipelines. The flow controller 7 is used to provide a reaction gas.
所述的氣體噴淋頭3上的環形進氣區域的數量大於等於2個，每一個環形進氣區域上的扇形區域的數量大於等於2個，圓形進氣區域和每一個扇形區域上的氣體通孔4的數量大於等於2個，且氣體通孔4的位置均勻分佈。 The number of annular air intake areas on the gas shower head 3 is greater than or equal to two, and the number of sector areas on each annular air intake area is greater than or equal to two. The number of gas through holes 4 is two or more, and the positions of the gas through holes 4 are evenly distributed.
每一個環形進氣區域上的所有氣體管路和這些氣體管路上的電子開關閥門、以及連接這些氣體管路的流量控制器，共同完成對該環形進氣區域的氣體流量控制。 All the gas pipelines on each annular gas inlet area and the electronic switching valves on these gas pipelines, and the flow controller connected to these gas pipelines, together complete the gas flow control of the annular gas inlet area.
所述控制器控制所述每一個電子開關閥門6交替通斷，使得反應氣體流入不同扇形區域的流量比例與各個扇形區域對應的電子開關閥門6的開通時間成正比。 The controller controls each of the electronic switching valves 6 to be switched on and off alternately, so that the flow rate of the reaction gas flowing into the different sector regions is proportional to the opening time of the electronic switching valve 6 corresponding to each sector region.
連接環形進氣區域的流量控制器7控制提供給該環形進氣區域的總氣量，控制器控制環形進氣區域上所有氣體管路上的電子開關閥門6輪流開啟，同一時間內，只允許一個電子開關閥門開啟。假設一個環形進氣區域上包含n個扇形區域，則有n個氣體管路，相應地，也有n個電子開關閥門，當電子開關閥門輪流開啟時，假設蝕刻制程的總供氣時間為T，環形進氣區域的單次供氣迴圈時間為t，則迴圈次數m=T/t，在每一次供氣迴圈時間內，該環形進氣區域的每個電子開關閥門的開啟時間滿足：t1+t2+t3+……+tn=t，其中，t1是第一電子開關閥門的開啟時間，t2是第二電子開關閥門的開啟時間，tn是第n個電子開關閥門的開啟時間。 The flow controller 7 connected to the annular intake area controls the total amount of air provided to the annular intake area. The controller controls the electronic switch valves 6 on all gas lines in the annular intake area to open in turns. Only one electronic device is allowed at a time. The on-off valve opens. Assume that a ring-shaped air inlet area contains n fan-shaped areas, there are n gas pipelines, and correspondingly, there are n electronic switching valves. When the electronic switching valves are opened in turn, it is assumed that the total gas supply time of the etching process is T, The single air supply cycle time of the annular air intake area is t, then the number of cycles m = T / t. During each air supply cycle time, the opening time of each electronic switching valve in the annular air intake area meets : T 1 + t 2 + t 3 + ... + t n = t, where t 1 is the opening time of the first electronic switch valve, t 2 is the opening time of the second electronic switch valve, and t n is the nth Opening time of electronic switching valve.
如圖2所示，在本發明的一個實施例中，氣體噴淋頭3包含圓形進氣區域301、第一環形進氣區域和第二環形進氣區域303，圓形進氣區域301、第一環形進氣區域和第二環形進氣區域303上都均勻設置有多個氣體通孔4，第一環形進氣區域被分割為四個區域，分別是第一扇形區域3021、第二扇形區域3022、第三扇形區域3023和第四扇形區域3024，第一氣體管路501連接第一扇形區域3021上的供氣通道，第二氣體管路502連接第二扇形區域3022上的供氣通道，第三氣體管路503連接第三扇形區域3023上的供氣通道，第四氣體管路504連接第四扇形區域3024上的供氣通道，第一氣體管路501、第二氣體管路502、第三氣體管路503和第四氣體管路504都連接到第一流量控制器701，第一氣體管路501上設置有第一電子開關閥門601，第二氣體管路502上設置有第二電子開關閥門602、第三氣體管路503上設置有第三電子開關閥門603、第四氣體管路504上設置有第四電子開關閥門604，第一電子開關閥門601、第二電子開關閥門602、第三電子開關閥門603和第四電子開關閥門604都連接控制器(圖中未顯示)。假設蝕刻制程的總供氣時間為100s，單次供氣迴圈時間設置為2s，設定四個扇形區域的供氣量比例依次為10%、25%、30%和35%，相應地，將第一電子開關閥門601的開啟時間t1設定為200ms，將第二電子開關閥門602的開啟時間t2設定為500ms，將第三電子開關閥門603的開啟時間t3設定為600ms，將第四電子開關閥門604的開啟時間t4設定為700ms，在進行第一次供氣迴圈時，首先開啟第一電子開關閥門601，200ms後，關閉第一電子開關閥門601，開啟第二電子開關閥門602，500ms後，關閉第二電子開關閥門602，開啟第三電子開關閥門603，600ms 後，關閉第三電子開關閥門603，開啟第四電子開關閥門604，700ms後，關閉第四電子開關閥門604，進行第二次供氣迴圈，再次開啟第一電子開關閥門601，一共進行50次迴圈，完成對該環形進氣區域的氣體流量控制。為了防止扇形區域上較長時間沒有供氣，可以將單次供氣迴圈時間設置的較小，增加供氣迴圈次數，以減少每個扇形區域上停止供氣的時間間隔。可以根據實際蝕刻情況來設置每一個扇形區域上的氣體管路的供氣時間，如果蝕刻速率較小，則可以相應增加該扇形區域的供氣時間，如果蝕刻速率較大，則可以相應減小該扇形區域的供氣時間。 As shown in FIG. 2, in one embodiment of the present invention, the gas shower head 3 includes a circular air intake area 301, a first annular air intake area, and a second annular air intake area 303. The circular air intake area 301 The first annular air intake region and the second annular air intake region 303 are evenly provided with a plurality of gas through holes 4. The first annular air intake region is divided into four regions, namely a first sector region 3021, respectively. The second fan-shaped region 3022, the third fan-shaped region 3023, and the fourth fan-shaped region 3024. The first gas pipeline 501 is connected to the gas supply channel on the first fan-shaped region 3021, and the second gas pipeline 502 is connected to the second fan-shaped region 3022. The gas supply channel, the third gas pipeline 503 is connected to the gas supply channel on the third sector 3030, the fourth gas pipeline 504 is connected to the gas supply channel on the fourth sector 3024, the first gas pipeline 501 and the second gas The pipeline 502, the third gas pipeline 503 and the fourth gas pipeline 504 are all connected to the first flow controller 701. The first gas pipeline 501 is provided with a first electronic switching valve 601, and the second gas pipeline 502 Provided with a second electronic on-off valve 602 and a third gas pipeline 503 A third electronic switch valve 603 is provided, a fourth electronic switch valve 604 is provided on the fourth gas pipeline 504, a first electronic switch valve 601, a second electronic switch valve 602, a third electronic switch valve 603, and a fourth electronic switch The valves 604 are connected to a controller (not shown). Assume that the total gas supply time of the etching process is 100s, the single gas supply cycle time is set to 2s, and the gas supply ratios of the four fan-shaped areas are set to 10%, 25%, 30%, and 35% in sequence. The opening time t 1 of an electronic switching valve 601 is set to 200 ms, the opening time t 2 of the second electronic switching valve 602 is set to 500 ms, the opening time t 3 of the third electronic switching valve 603 is set to 600 ms, and the fourth electronic The opening time t 4 of the switching valve 604 is set to 700 ms. During the first air supply loop, the first electronic switching valve 601 is first opened. After 200 ms, the first electronic switching valve 601 is closed and the second electronic switching valve 602 is opened. After 500ms, close the second electronic switch valve 602 and open the third electronic switch valve 603. After 600ms, close the third electronic switch valve 603 and open the fourth electronic switch valve 604. After 700ms, close the fourth electronic switch valve 604. Perform the second gas supply loop, open the first electronic switch valve 601 again, and perform a total of 50 loops to complete the gas flow control of the annular intake area. In order to prevent no air supply for a long time in the sector, you can set the cycle time of a single gas supply to be shorter and increase the number of gas supply cycles to reduce the time interval for stopping the gas supply in each sector. The gas supply time of the gas pipeline on each sector can be set according to the actual etching situation. If the etching rate is small, the gas supply time of the sector can be increased accordingly. If the etching rate is large, it can be reduced accordingly. Air supply time of this sector.
在另一個實施例中，控制器還可以控制環形進氣區域上所有氣體管路上的電子開關閥門6輪流關閉，同一時間內，只允許一個電子開關閥門關閉。假設環形進氣區域的總氣量，一個環形進氣區域上包含n個扇形區域，則有n個氣體管路，相應地，也有n個電子開關閥門，當電子開關閥門輪流關閉時，假設蝕刻制程的總供氣時間為T，環形進氣區域的單次供氣迴圈時間為t，則迴圈次數m=T/t，在每一次供氣迴圈時間內，該環形進氣區域的每個電子開關閥門的關閉時間滿足：t關1+t關2+t關3+……+t關n=t，其中，t關1是第一電子開關閥門的關閉時間，t關2是第二電子開關閥門的關閉時間，t關n是第n個電子開關閥門的關閉時間，在同一時間內，該環形進氣區域上所有處於開啟狀態的電子開關閥門所處的氣體管路上的總氣量等於環形進氣區域的總氣量。 In another embodiment, the controller can also control the electronic switch valves 6 on all gas lines on the annular air intake area to be closed in turn. Only one electronic switch valve can be closed at the same time. Assume the total air volume of the annular air intake area. An annular air intake area contains n fan-shaped areas, there are n gas lines, and accordingly, there are n electronic switching valves. When the electronic switching valves are closed in turn, it is assumed that the etching process is performed. The total air supply time is T, and the single air supply lap time of the annular air intake area is t, then the number of laps m = T / t. During each air supply lap time, every The closing time of each electronic switch valve satisfies: t close 1 + t close 2 + t close 3 + ... + t close n = t, where t close 1 is the close time of the first electronic switch valve, and t close 2 is the first The closing time of the second electronic switch valve, t close n is the closing time of the nth electronic switch valve. At the same time, the total gas volume on the gas pipeline where all the electronic switch valves in the ring-shaped air intake area are open. It is equal to the total air volume in the annular intake area.
可以根據實際蝕刻情況來設置每一個扇形區域上的氣體管路的停止供氣時間，如果蝕刻速率較小，則可以相應減小該扇形區域的停止供氣時間，如果蝕刻速率較大，則可以相應增加該扇形區域的停止 供氣時間。在這種控制方式下，為了保證同時供氣的多個氣體管路上的氣量穩定，如圖1所示，在每一個氣體管路上設置限流器9，保證氣體管路上的流量穩定，並可防止氣體倒流。 The gas supply stop time of the gas pipeline on each sector can be set according to the actual etching situation. If the etching rate is small, the gas supply stop time of the sector can be reduced accordingly. If the etching rate is large, it can be Increase the stop of the sector accordingly Gas supply time. In this control mode, in order to ensure the stable gas quantity on multiple gas pipelines supplying gas at the same time, as shown in Fig. 1, a flow restrictor 9 is provided on each gas pipeline to ensure a stable flow on the gas pipeline, and Prevent gas backflow.
本發明還提供一種半導體蝕刻設備，其中，包含：反應腔1；氣體噴淋頭3，其設置在半導體蝕刻設備的反應腔1內部，位於晶片2上方，該氣體噴淋頭3包含圓形進氣區域和至少一個同心設置的環形進氣區域，所述圓形進氣區域和環形進氣區域互相隔離，且圓形進氣區域和環形進氣區域的下表面包含多個氣體通孔4用於通入反應氣體，每一個環形進氣區域又包含多個扇形區域，不同的扇形區域之間互相隔離，圓形進氣區域每一個扇形區域都具有一個供氣通道圓形進氣區域扇形區域；多個氣體管路5，其分別連接氣體噴淋頭3上的多個扇形區域對應的多個供氣通道；多個電子開關閥門6，其分別設置在每一個氣體管路5上，每一個電子開關閥門6都連接控制器，用於控制氣體管路5的通斷；多個流量控制器7，每一個流量控制器7連接同一個環形進氣區域上的所有氣體管路5，用於控制提供給環形進氣區域的總氣量；氣源8，其管路連接所有的流量控制器7，用於提供反應氣體。 The invention also provides a semiconductor etching equipment, which comprises: a reaction chamber 1; a gas shower head 3, which is arranged inside the reaction chamber 1 of the semiconductor etching equipment and is located above the wafer 2. The gas shower head 3 includes a circular inlet. The air inlet area and at least one annular air inlet area arranged concentrically, the circular air inlet area and the annular air inlet area are isolated from each other, and the lower surface of the circular air inlet area and the annular air inlet area includes a plurality of gas through holes. For the introduction of the reaction gas, each ring-shaped air inlet area contains multiple fan-shaped areas, and the different fan-shaped areas are isolated from each other. Each fan-shaped area of the circular air-in area has a gas supply channel. A plurality of gas pipelines 5, which are respectively connected to a plurality of gas supply channels corresponding to a plurality of fan-shaped areas on the gas shower head 3; a plurality of electronic switching valves 6, which are respectively disposed on each gas pipeline 5, An electronic on-off valve 6 is connected to a controller for controlling the on-off of the gas pipeline 5; a plurality of flow controllers 7, each of which is connected to all the gas in the same annular inlet area Line 5 for controlling intake air supplied to the annular region of the total gas; gas source 8, which connects all line flow controller 7 for supplying reactive gas.
在一個實施例中，還可以在每一個氣體管路5上設置一個限流器9，保證氣體管路上的流量穩定，並可防止氣體倒流。 In one embodiment, a flow restrictor 9 may also be provided on each gas pipeline 5 to ensure a stable flow on the gas pipeline and prevent gas from flowing backward.
本發明通過控制氣體管路的開啟或關閉的時間來控制氣體流量，可以較為精準地控制氣量，從而對蝕刻不均勻進行有效補償，而且用較為簡單的開關閥門來代替流量控制器，極大地節省了成本。 The invention controls the gas flow rate by controlling the opening or closing time of the gas pipeline, which can accurately control the gas volume, thereby effectively compensating for uneven etching, and using a simpler on-off valve to replace the flow controller, which greatly saves Cost.
儘管本發明的內容已經通過上述較佳實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域的通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的申請專利範圍來限定。 Although the content of the present invention has been described in detail through the above-mentioned preferred embodiments, it should be recognized that the above description should not be considered as limiting the present invention. Various modifications and alternatives to the present invention will become apparent to those skilled in the art after reading the foregoing. Therefore, the protection scope of the present invention should be defined by the scope of the attached patent application.
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| CN111128812A (en) * | 2020-01-17 | 2020-05-08 | 长江存储科技有限责任公司 | Dry etching device |
| CN111290443B (en) * | 2020-04-02 | 2023-04-07 | 广西防城港核电有限公司 | Continuous spraying flow control system of nuclear power station voltage stabilizer |
| CN111769061A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
| CN115206841B (en) * | 2022-07-04 | 2023-10-20 | 北京中科科美科技股份有限公司 | Partition pressure control spray header |
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