TWI658535B - Pattern forming device - Google Patents
Pattern forming device Download PDFInfo
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- TWI658535B TWI658535B TW107111761A TW107111761A TWI658535B TW I658535 B TWI658535 B TW I658535B TW 107111761 A TW107111761 A TW 107111761A TW 107111761 A TW107111761 A TW 107111761A TW I658535 B TWI658535 B TW I658535B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Registering, Tensioning, Guiding Webs, And Rollers Therefor (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
Abstract
本發明之基板支承裝置設有：基材，其具備用以將實施光學處理之具有透過性之可撓性基板以既定之曲率彎曲之狀態或平坦之狀態支承之面；以及膜體，其係形成於上述基材之表面上，對於光學處理所使用之光(曝光用之紫外線、對準用之可見光等)之反射率為50%以下。 The substrate supporting device of the present invention is provided with a base material having a surface for supporting a flexible substrate having optical transparency that is optically processed with a predetermined curvature or a flat state; and a film body, which is It is formed on the surface of the substrate, and has a reflectance of 50% or less with respect to light used for optical processing (ultraviolet light for exposure, visible light for alignment, etc.).
Description
本發明係關於一種將以處理裝置處理之可撓性基板之一部分以彎曲之狀態或平坦之狀態支承之基板支承裝置、及以該支承裝置支承之可撓性基板之曝光裝置。 The present invention relates to a substrate supporting device that supports a part of a flexible substrate processed by a processing device in a bent state or a flat state, and an exposure device for a flexible substrate supported by the supporting device.
本申請案係基於2012年8月28日申請之日本專利特願2012-188116號而主張優先權，並將其內容引用於本文中。 This application claims priority based on Japanese Patent Application No. 2012-188116 filed on August 28, 2012, and the contents are incorporated herein by reference.
近年來，作為平板顯示器，除液晶方式或電漿方式以外，有機EL方式亦受到關注。於主動矩陣方式之有機EL(AMOLED)顯示器之情形時，於包含驅動各像素之薄膜電晶體(TFT)、驅動電路、各種信號線等之背板上積層有包含有機EL之像素發光層或透明電極層等之頂板。 In recent years, as a flat panel display, in addition to a liquid crystal method or a plasma method, an organic EL method has also attracted attention. In the case of an active-matrix organic EL (AMOLED) display, a pixel light-emitting layer including an organic EL layer or a transparent layer is laminated on a back plate including a thin film transistor (TFT) driving a pixel, a driving circuit, various signal lines, and the like. The top plate of the electrode layer.
於有機EL之顯示器製造中，作為更低成本且量產性較高之方式之一，提出有如下方法：將可撓性(flexible)之樹脂材料或塑膠、或金屬箔製成厚度為200μm以下之長條狀片材(膜)而形成，於其上以捲對捲(Roll to Roll)方式直接製作顯示器之背板或頂板(專利文獻1)。 In the manufacture of organic EL displays, as one of the lower cost and higher mass production methods, the following method has been proposed: a flexible resin material or plastic, or a metal foil having a thickness of 200 μm or less It is formed by a long sheet (film), and a back plate or a top plate of a display is directly produced by a roll-to-roll method thereon (Patent Document 1).
專利文獻1中揭示有如下方法：藉由利用噴墨方式等之印刷機於可撓性長條片材(PET(Poly-EthyleneTerephthalate，聚對苯二甲酸乙二酯)膜等)上連續地形成構成各像素用之TFT之電極層、半導體層、絕緣膜等、及用以形成像素發光層、配線層之流動性材料，而廉價地製造顯示器。 Patent Document 1 discloses a method of continuously forming a flexible long sheet (a PET (Poly-Ethylene Terephthalate) film, etc.) by a printer using an inkjet method or the like. An electrode layer, a semiconductor layer, an insulating film, and the like constituting a TFT for each pixel, and a fluid material for forming a pixel light emitting layer and a wiring layer can be manufactured inexpensively.
進而，專利文獻1中提出有如下方法：為了更精密地潤飾夾持絕緣層而上下積層之TFT之閘極電極層與汲極/原極電極層之相對位置關係或各電極之形狀 等，形成藉由紫外線之照射改質表面之親撥液性之自我組織化單分子層(SAM)，使用利用紫外線之圖案曝光裝置，更精密地潤飾各電極層之形狀。 Further, Patent Document 1 proposes a method of forming the relative positional relationship between the gate electrode layer and the drain / original electrode layer of the TFTs stacked on top and bottom for more precise decoration of the insulating layer, and forming the shape of each electrode. The liquid-repellent self-organizing monomolecular layer (SAM) of the modified surface is irradiated with ultraviolet rays, and the pattern exposure device using ultraviolet rays is used to more accurately polish the shape of each electrode layer.
[專利文獻1]國際公開2010/001537號 [Patent Document 1] International Publication No. 2010/001537
上述專利文獻1之曝光裝置係將平面遮罩之圖案經由投影光學系統而投影曝光於平坦地支承之可撓性之長條片材基板上。 The exposure device of the aforementioned Patent Document 1 projects and exposes a pattern of a flat mask on a flexible long sheet substrate supported flatly through a projection optical system.
相對於此，於藉由捲對捲方式，在連續地搬送之可撓性片材基板上反覆曝光遮罩之圖案之情形時，藉由將片材基板之搬送方向作為掃描方向，使遮罩為圓筒狀旋轉遮罩之掃描型曝光裝置，可期待生產性之飛躍提高。 On the other hand, when the pattern of the exposure mask is repeatedly exposed on the flexible sheet substrate that is continuously conveyed by the roll-to-roll method, the mask direction is used as the scanning direction to make the mask A scanning exposure device that is a cylindrical rotating mask can expect a dramatic improvement in productivity.
連續地搬送之可撓性片材基板係較薄之基板，以空氣軸承(air bearing)方式之平坦或彎曲之墊面等進行支承。或者，片材基板捲曲於旋轉捲筒(直徑較大之輥)之圓筒狀之外周面之一部分，以彎曲之狀態受到支承。 The flexible sheet substrate that is continuously conveyed is a thin substrate, and is supported by a flat or curved mat surface such as an air bearing method. Alternatively, the sheet substrate is curled around a portion of a cylindrical outer peripheral surface of a rotating reel (roller having a larger diameter) and is supported in a bent state.
於在形成有ITO等透明層之透明度較高之PET膜、PEN(Poly-Ethylene Naphthalate，聚萘二甲酸乙二酯)膜、極薄玻璃等，使用曝光裝置進行圖案化之情形時，投射至塗佈於該基板之表面之光感應層(例如光阻劑、感光性矽烷偶合材料等)的圖案曝光用光到達至基板下之墊面或旋轉捲筒之外周面。 When a transparent film such as ITO, a PET film, a PEN (Poly-Ethylene Naphthalate) film, or an extremely thin glass is patterned using an exposure device, it is projected onto The pattern-exposing light of the light-sensing layer (for example, a photoresist, a photosensitive silane coupling material, etc.) applied on the surface of the substrate reaches the undersurface of the substrate or the outer peripheral surface of the rotating roll.
因此，存在如下情況：於墊面或旋轉捲筒之外周面反射之光成分(回光)自基板之背面側返回至表面側(投影光學系統處)，使形成於光感應層之圖案之像質劣化。若可將位於基板之背側之墊面或旋轉捲筒之外周面之反射率抑制為較低，則可無視由該回光所產生之影響。 Therefore, there is a case where the light component (return light) reflected on the outer surface of the mat surface or the rotating reel returns from the back surface side of the substrate to the surface side (at the projection optical system), so that the image of the pattern formed on the light sensing layer is formed Quality deterioration. If the reflectance of the pad surface on the back side of the substrate or the outer peripheral surface of the rotating roll can be suppressed to be low, the influence caused by the back light can be ignored.
然而，為了進行曝光裝置之校準或基板之位置對準，於平坦之墊面或旋轉捲筒之外周面之一部分設置基準標記或基準圖案，經由光學對準顯微鏡等對其進行檢測時，墊面或旋轉捲筒之外周面之反射率較低，因此亦產生不易以良好之對比度檢測基準標記或基準圖案之問題等。 However, in order to calibrate the exposure device or position the substrate, a reference mark or reference pattern is set on a flat pad surface or a part of the outer peripheral surface of the rotating roll, and the pad surface is detected by an optical alignment microscope or the like. Or, the reflectivity of the outer peripheral surface of the rotating reel is low, so that it is difficult to detect the reference mark or reference pattern with good contrast.
本發明之態樣之目的在於提供一種降低由來自支承基板之構件之反射光(回光)所造成之影響的基板支承裝置。 An object of the aspect of the present invention is to provide a substrate supporting device that reduces the influence caused by reflected light (return light) from a member supporting a substrate.
又，本發明之態樣之目的在於提供一種基板支承裝置，其可藉由對準顯微鏡等之光學觀察裝置而良好地檢測形成於支承基板之裝置之支承面之一部分的基準標記或基準圖案、或者來自形成於基板之標記或圖案之反射光(回光)。 In addition, an object of aspects of the present invention is to provide a substrate support device which can detect a reference mark or a reference pattern formed on a part of a support surface of a device supporting a substrate by aligning an optical observation device such as a microscope, and the like. Or reflected light (back light) from a mark or pattern formed on a substrate.
進而，本發明之態樣之目的在於提供一種於藉由此種基板支承裝置支承之基板實施高精度之光圖案化之曝光裝置。 Furthermore, an object of the aspect of the present invention is to provide an exposure apparatus that performs high-precision light patterning on a substrate supported by such a substrate supporting device.
根據本發明之第1態樣，提供一種基板支承裝置，具備：基材，其具備用以將實施光學處理(例如曝光處理或對準時之計測處理)之具有透過性之可撓性基板以彎曲之狀態或平坦之狀態支承之面；及膜體，其係形成於該基材之面上，對於光學處理所使用之光之反射率為50%以下。 According to a first aspect of the present invention, there is provided a substrate supporting device including a substrate including a flexible substrate having a permeability for performing optical processing (for example, exposure processing or measurement processing during alignment) to bend the substrate. A surface supported in a state of being flat or flat; and a film body formed on the surface of the substrate and having a reflectance of 50% or less for light used in optical processing.
根據本發明之第2態樣，提供一種基板支承裝置，其具備：基材，其具備用以將實施光學處理(例如曝光處理或對準時之計測處理)之具有透過性之可撓性基板以彎曲之狀態或平坦之狀態支承之面；膜體，其係形成於該基材之面上，對於光學處理所使用之光之反射率為50%以下；及基準圖案，其以微小階差形成於該膜體上。 According to a second aspect of the present invention, there is provided a substrate supporting device including a substrate including a flexible substrate having a permeability for performing optical processing (for example, exposure processing or measurement processing during alignment). A curved or flat surface supporting surface; a film body formed on the surface of the substrate and having a reflectance of 50% or less for light used in optical processing; and a reference pattern formed with a slight step On the membrane.
根據本發明之第3態樣，提供一種使用第1態樣或第2態樣之基板支承裝置進行圖案曝光之曝光裝置。 According to a third aspect of the present invention, there is provided an exposure device that performs pattern exposure using the substrate support device of the first aspect or the second aspect.
根據本發明之第1態樣、第2態樣，提供一種支承裝置，其可於在透過性之薄基板曝光圖案時減少成為雜訊之不必要之曝光(不必要之圖案之映入等)。 According to the first aspect and the second aspect of the present invention, there is provided a supporting device which can reduce unnecessary exposure (such as reflection of unnecessary patterns) that becomes noise when exposing a pattern on a transparent thin substrate. .
根據本發明之第3態樣，可提供一種能夠進行精密之圖案曝光之曝光裝置。 According to the third aspect of the present invention, an exposure apparatus capable of performing precise pattern exposure can be provided.
DM‧‧‧圓筒遮罩 DM‧‧‧Cylinder Mask
DR‧‧‧旋轉捲筒 DR‧‧‧Rotating reel
DRs‧‧‧外周表面 DRs‧‧‧ peripheral surface
DR1‧‧‧基材 DR1‧‧‧ substrate
DR2‧‧‧基底層 DR2‧‧‧basal layer
DR3‧‧‧頂層 DR3‧‧‧Top
P‧‧‧基板 P‧‧‧ substrate
PL1~PL4‧‧‧投影光學系統 PL1 ~ PL4‧‧‧Projection optical system
AM1~AM5‧‧‧對準系統 AM1 ~ AM5‧‧‧Alignment system
RMP‧‧‧基準圖案 RMP‧‧‧ benchmark pattern
RL1、RL2、RLa、RLb、RLc‧‧‧線圖案 RL1, RL2, RLa, RLb, RLc‧‧‧ line patterns
UW1~UW4‧‧‧描繪模組UW1 ~ UW4‧‧‧Drawing Module
圖1係表示第1實施形態之曝光裝置之概略構成之圖。 FIG. 1 is a diagram showing a schematic configuration of an exposure apparatus according to a first embodiment.
圖2係表示圖1之曝光裝置之主要部之配置的立體圖。 FIG. 2 is a perspective view showing an arrangement of a main part of the exposure apparatus of FIG. 1. FIG.
圖3係表示圖1、圖2之曝光裝置之投影光學系統之構成的圖。 FIG. 3 is a diagram showing a configuration of a projection optical system of the exposure apparatus of FIGS. 1 and 2.
圖4係表示照明區域與投影區域之配置關係之示意圖。 FIG. 4 is a schematic diagram showing the arrangement relationship between the illumination area and the projection area.
圖5係表示支承基板之旋轉捲筒與編碼器頭之配置之圖。 Fig. 5 is a diagram showing the arrangement of a rotary reel and an encoder head supporting a substrate.
圖6係表示基板上之對準系統與投影區域之配置關係之圖。 FIG. 6 is a diagram showing the arrangement relationship between the alignment system on the substrate and the projection area.
圖7係示意性地表示支承於旋轉捲筒上之基板之構造之圖。 Fig. 7 is a view schematically showing a structure of a substrate supported on a rotating reel.
圖8係表示第1實施形態之旋轉捲筒之表面構造之剖面圖。 Fig. 8 is a cross-sectional view showing the surface structure of the rotary reel according to the first embodiment.
圖9係表示由旋轉捲筒之表面材料之厚度所產生之反射率特性之圖。 Fig. 9 is a graph showing the reflectance characteristics caused by the thickness of the surface material of the rotating reel.
圖10係表示第2實施形態之旋轉捲筒之表面構造之立體圖。 Fig. 10 is a perspective view showing a surface structure of a rotating reel according to a second embodiment.
圖11係表示第2實施形態之旋轉捲筒之表面構造之剖面圖。 Fig. 11 is a cross-sectional view showing a surface structure of a rotating reel according to a second embodiment.
圖12係表示第3實施形態之圖案描繪裝置之構成之圖。 FIG. 12 is a diagram showing a configuration of a pattern drawing device according to a third embodiment.
圖13係說明圖12之裝置之基板之描繪形態的圖。 FIG. 13 is a diagram illustrating a drawing form of a substrate of the device of FIG. 12.
圖14係表示第4實施形態之旋轉捲筒之表面構造之立體圖。 Fig. 14 is a perspective view showing a surface structure of a rotating reel according to a fourth embodiment.
圖15係表示第5實施形態之旋轉捲筒之表面構造之剖面的圖。 Fig. 15 is a cross-sectional view showing a surface structure of a rotating reel according to a fifth embodiment.
圖16係表示第6實施形態之圖案曝光裝置之構成之圖。 FIG. 16 is a diagram showing a configuration of a pattern exposure apparatus according to a sixth embodiment.
圖1係表示本實施形態之可撓性基板用之投影型曝光裝置EX之整體構成的圖。曝光裝置EX係對自前步驟之處理裝置搬送而來之可撓性之片材狀基板P之光感應層照射與顯示器用之電路圖案或配線圖案對應之紫外線之圖案化光。 FIG. 1 is a diagram showing the overall configuration of a projection-type exposure apparatus EX for a flexible substrate according to this embodiment. The exposure device EX irradiates the light-sensing layer of the flexible sheet-like substrate P carried from the processing device in the previous step with patterned light corresponding to ultraviolet light corresponding to a circuit pattern or wiring pattern for a display.
紫外線包含例如作為水銀放電等之明線之g射線(436nm)、h射線(405nm)、i射線(365nm)，或KrF、XeCl、ArF等之準分子雷射(分別為波長248nm、308nm、193nm)，或來自半導體雷射光源、LED光源、高頻諧波雷射光源等之波長400nm以下之光。 Ultraviolet rays include, for example, g-rays (436nm), h-rays (405nm), i-rays (365nm), which are bright lines such as mercury discharge, or excimer lasers of KrF, XeCl, ArF, etc. (wavelengths of 248nm, 308nm, and 193nm, respectively) ), Or light from a semiconductor laser light source, LED light source, high-frequency harmonic laser light source, etc., with a wavelength below 400 nm.
圖1之曝光裝置EX設置於調溫室EVC內。曝光裝置EX經由被動或主動之防震單元SU1、SU2設置於製造工廠之地面。於曝光裝置EX內，設有用以將自前步驟搬送而來之基板P以既定之速度搬送至後步驟之搬送機構。 The exposure device EX of FIG. 1 is set in a greenhouse EVC. The exposure device EX is installed on the floor of the manufacturing plant via passive or active anti-vibration units SU1 and SU2. The exposure device EX is provided with a transfer mechanism for transferring the substrate P transferred from the previous step to the subsequent step at a predetermined speed.
搬送機構係由如下部件等構成：邊緣位置控制器EPC，其將基板P之Y方向(與長度方向正交之寬度方向)之中心控制於固定位置；驅動輥DR4，其受到夾持；旋轉捲筒DR，其以圓筒面狀支承基板P上經圖案曝光之部分，並且圍繞旋轉中心線AX2旋轉而搬送基板P；張力調整輥RT1、RT2，其對捲曲於旋轉捲筒DR之基板P施加既定之張力；及2組驅動輥DR6、DR7，其用以對基板P賦予既定之鬆弛度(裕度)DL。 The conveying mechanism is composed of the following components: the edge position controller EPC, which controls the center of the substrate P in the Y direction (the width direction orthogonal to the length direction) at a fixed position; the driving roller DR4, which is clamped; the rotating roll The cylinder DR supports the pattern-exposed portion of the substrate P in a cylindrical surface shape, and rotates the substrate P by rotating around the rotation center line AX2. The tension adjusting rollers RT1 and RT2 apply the substrate P curled on the rotating drum DR. A predetermined tension; and two sets of driving rollers DR6 and DR7, which are used to impart a predetermined degree of slack (margin) DL to the substrate P.
進而，於曝光裝置EX內設有如下部件：圓筒狀之圓筒遮罩DM，其圍繞旋轉中心線AX1旋轉；複數個投影光學系統PL1、PL2、...，其等將形成於圓筒遮罩DM之外周面之透過型遮罩圖案之一部分像投影於藉由旋轉捲筒DR支承之基板P之一部分；對準系統AM，其用以對遮罩圖案之一部分投影像與基板P進行相對位置對準(alignment)。 Further, the exposure device EX is provided with the following components: a cylindrical cylindrical mask DM that rotates around a rotation center line AX1; a plurality of projection optical systems PL1, PL2, ..., etc., which are to be formed in a cylinder A part of the transmissive mask pattern on the outer surface of the mask DM is projected on a part of the substrate P supported by the rotating reel DR; the alignment system AM is used to project an image of the part of the mask pattern to the substrate P Relative position alignment.
對準系統AM包含檢測預先形成於基板P之對準標記等之對準顯微鏡。 The alignment system AM includes an alignment microscope that detects alignment marks and the like formed in advance on the substrate P.
以上之構成中，圖1中設定之正交座標系XYZ之XY平面係與工廠 之地面平行地設定，基板P之表面之寬度方向(亦稱為TD方向)係以與Y方向一致之方式設定。於此情形時，圓筒遮罩DM之旋轉中心線AX1與旋轉捲筒DR之旋轉中心線AX2係均與Y軸平行地設定，且於Z軸方向上相隔而配置。 In the above structure, the orthogonal coordinate system XYZ set in Figure 1 and the XY plane system and factory The ground is set in parallel, and the width direction (also referred to as the TD direction) of the surface of the substrate P is set so as to coincide with the Y direction. In this case, the rotation center line AX1 of the cylindrical cover DM and the rotation center line AX2 of the rotating reel DR are both set in parallel with the Y axis, and are arranged apart from each other in the Z axis direction.
又，本實施形態之投影光學系統PL1、PL2、...於下文進行詳細敍述，以如複數個投影視野(投影像)鋸齒狀配置之多鏡頭方式構成，其投影倍率設定為等倍(x1)。 In addition, the projection optical systems PL1, PL2, ... of this embodiment are described in detail below, and are constituted by a multi-lens method such as a plurality of projection fields of view (projected images) arranged in a zigzag manner. ).
圓筒遮罩DM之外周面(圖案面)之直徑(自中心AX1之半徑)與旋轉捲筒DR之外周面(支承面)之直徑(自中心AX2之半徑)實質上可相等。例如，可將圓筒遮罩DM之直徑設為30cm，將旋轉捲筒DR之直徑設為30cm。 The diameter (radius from the center AX1) of the outer peripheral surface (pattern surface) of the cylindrical mask DM and the diameter (radius from the center AX2) of the outer peripheral surface (bearing surface) of the rotary drum DR may be substantially equal. For example, the diameter of the cylindrical mask DM may be set to 30 cm, and the diameter of the rotating drum DR may be set to 30 cm.
再者，圓筒遮罩DM之外周面(圖案面)之直徑(自中心AX1之半徑)與旋轉捲筒DR之外周面(支承面)之直徑(自中心AX2之半徑)並非必需相同，亦可大不相同。例如，亦可將圓筒遮罩DM之直徑設為30cm，將旋轉捲筒DR之直徑設為40~50cm左右。 In addition, the diameter (radius from the center AX1) of the outer peripheral surface (pattern surface) of the cylindrical mask DM and the diameter (radius from the center AX2) of the outer peripheral surface (support surface) of the rotating drum DR are not necessarily the same, and Can be very different. For example, the diameter of the cylindrical mask DM may be set to 30 cm, and the diameter of the rotary reel DR may be set to about 40 to 50 cm.
再者，上述數值為一例，本發明並不限定於此。 The above numerical values are examples, and the present invention is not limited thereto.
再者，於使旋轉捲筒DR之直徑與圓筒遮罩DM(圖案面)之直徑相等之情形時，嚴格而言，考慮到捲曲於旋轉捲筒DR之外周面之基板P之厚度。例如，若將基板P之厚度設為100μm(0.1mm)，則旋轉捲筒DR之外周面之半徑相對於圓筒遮罩DM(圖案面)之半徑僅小0.1mm。 Furthermore, when the diameter of the rotating drum DR is made equal to the diameter of the cylindrical mask DM (pattern surface), strictly speaking, the thickness of the substrate P curled on the outer peripheral surface of the rotating drum DR is considered. For example, if the thickness of the substrate P is 100 μm (0.1 mm), the radius of the outer peripheral surface of the rotating roll DR is smaller than the radius of the cylindrical mask DM (pattern surface) by only 0.1 mm.
進而，於將旋轉捲筒DR之外周面之周方向之全長(周長)設為適當之長度、例如100.0cm之情形時，旋轉捲筒DR之外周面之直徑藉由圓周率π而為100/πcm，因此必需以數μm~次微米之精度加工直徑。 Furthermore, when the total length (perimeter) in the circumferential direction of the outer peripheral surface of the rotary reel DR is set to an appropriate length, for example, 100.0 cm, the diameter of the outer peripheral surface of the rotary reel DR is 100 / by the pi π. πcm, it is necessary to process the diameter with a precision of several μm to sub-micron.
本實施態樣中使用透過型圓筒遮罩DM，因此於圓筒遮罩DM之內部空間設有如下照明系統IU，該照明系統IU係朝向圓筒遮罩DM之圖案面(外周面)照射與投影光學系統PL1、PL2、...之各者之視野區域對應之曝光用之照明光(紫外線)。 In this embodiment, a transmissive cylindrical mask DM is used. Therefore, the internal space of the cylindrical mask DM is provided with the following lighting system IU, which is irradiated toward the pattern surface (outer peripheral surface) of the cylindrical mask DM. Illumination light (ultraviolet light) for exposure corresponding to the field of view of each of the projection optical systems PL1, PL2, ....
再者，於圓筒遮罩DM為反射型之情形時，設有經由投影光學系統PL1、PL2、...之部分光學元件向圓筒遮罩DM之外周面(反射型之圖案面)照射曝光用之照明光的落斜照明光學系統。 Furthermore, when the cylindrical mask DM is a reflective type, part of the optical elements via the projection optical systems PL1, PL2, ... is provided to irradiate the outer peripheral surface (reflective pattern surface) of the cylindrical mask DM. An oblique illumination optical system for exposure light.
以上之構成中，藉由使圓筒遮罩DM與旋轉捲筒DR以既定之旋轉速度比同步旋轉，形成於圓筒遮罩DM之外周面之遮罩圖案之像被連續地反覆掃描曝光於捲曲於旋轉捲筒DR之外周面之一部分的基板P之表面(沿圓筒面彎曲之面)。 In the above configuration, by rotating the cylindrical mask DM and the rotating reel DR synchronously at a predetermined rotation speed ratio, the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask DM is continuously scanned and exposed on the A surface (a surface curved along a cylindrical surface) of the substrate P that is curled around a part of the outer peripheral surface of the rotary drum DR.
本實施形態中使用之基板P例如為樹脂膜、由不鏽鋼等金屬或合金構成之箔(foil)等。 The substrate P used in the present embodiment is, for example, a resin film, a foil made of a metal or an alloy such as stainless steel, and the like.
樹脂膜之材質包含例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯-乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂中之1種或2種以上。 The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene-ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, One or more of polystyrene resin and vinyl acetate resin.
為了實質上能夠無視因各種處理步驟中受到之熱而產生之變形量，基板P可選擇熱膨脹係數並不顯著大者。熱膨脹係數可藉由例如將無機填料混合於樹脂膜而減小。作為無機填料，例如可使用氧化鈦、氧化鋅、氧化鋁、氧化矽等。 In order to substantially disregard the amount of deformation caused by the heat received in various processing steps, the substrate P may select a thermal expansion coefficient that is not significantly large. The thermal expansion coefficient can be reduced by, for example, mixing an inorganic filler with a resin film. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide.
又，基板P可為由浮式法等製造之厚度為例如100μm左右之極薄玻璃之單層體，亦可為於該極薄玻璃貼合有上述樹脂膜、箔等之積層體。 The substrate P may be a single-layered body made of a very thin glass having a thickness of, for example, about 100 μm by a float method or the like, or a laminated body in which the above-mentioned resin film, foil, and the like are bonded to the extremely thin glass.
再者，上述數值為一例，本發明並不限定於此。 The above numerical values are examples, and the present invention is not limited thereto.
圖2係以立體圖表示圖1所示之曝光裝置EX中之圓筒遮罩DM、複數個投影光學系統PL1、PL2、...、旋轉捲筒DR之配置關係者。 FIG. 2 is a perspective view showing the arrangement relationship of the cylindrical mask DM, the plurality of projection optical systems PL1, PL2,..., And the rotating roll DR in the exposure device EX shown in FIG.
圖2中，設置於圓筒遮罩DM與旋轉捲筒DR之間之投影光學系統PL1、PL2、PL3、PL4、...(此處，圖示4個投影光學系統)之各者例如如日本特開平7-57986 號公報所揭示，將兩個使用圓形投影視野之一半(半視野)之反射折射型等倍成像透鏡於Z方向上串聯連接，使遮罩圖案成為正立之非反轉像而以等倍投影於基板側。 In FIG. 2, each of the projection optical systems PL1, PL2, PL3, PL4, ... (here, the four projection optical systems shown) provided between the cylindrical mask DM and the rotating reel DR is, for example, as shown in FIG. Japanese Unexamined Patent Publication No. 7-57986 discloses that two reflection-refraction equal-power imaging lenses using one half (half-field) of a circular projection field of view are connected in series in the Z direction so that the mask pattern becomes an upright non-reflection The image is projected on the substrate side at equal magnification.
投影光學系統PL1、PL2、PL3、PL4...均為相同之構成，詳情於下文進行敍述。 The projection optical systems PL1, PL2, PL3, PL4, ... all have the same structure, and the details are described below.
再者，投影光學系統PL1、PL2、PL3、PL4、...分別安裝於牢固之保持柱PLM而一體化。保持柱PLM係由相對於溫度變化之熱膨脹係數較小之鎳鋼等金屬構成，可將因溫度變化所引起之各投影光學系統PL1、PL2、PL3、PL4、...間之位置變動抑制為較小。 Furthermore, the projection optical systems PL1, PL2, PL3, PL4,... Are respectively mounted and integrated on a firm holding column PLM. The holding column PLM is composed of a metal such as nickel steel having a small thermal expansion coefficient with respect to temperature change, and can suppress positional variations among the projection optical systems PL1, PL2, PL3, PL4, ... caused by temperature changes to Smaller.
如圖2所示，於旋轉捲筒DR之外周面，於旋轉中心線AX2所延伸之方向(Y方向)之兩端部，計測旋轉捲筒DR之旋轉角度位置(或周長方向之位置)之編碼器系統之標尺部GPa、GPb遍及周方向之整體而分別設置為環狀。 As shown in FIG. 2, on the outer peripheral surface of the rotating drum DR, at both ends of the direction (Y direction) where the rotation centerline AX2 extends, the rotation angle position (or the position in the circumferential direction) of the rotating drum DR is measured. The scale portions GPa and GPb of the encoder system are arranged in a ring shape throughout the entire circumference.
標尺部GPa、GPb係於旋轉捲筒DR之外周面之周方向以固定之間距(例如20μm)刻設有凹狀或凸狀之格子線之繞射格子，以遞增型標尺之方式而構成。 The scale portions GPa and GPb are engraved with a diffraction grid provided with concave or convex grid lines at a fixed interval (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotary drum DR, and are configured as an incremental scale.
再者，上述數值為一例，本發明並不限定於此。 The above numerical values are examples, and the present invention is not limited thereto.
基板P係以捲曲於避開旋轉捲筒DR之兩端之標尺部GPa、GPb之內側之方式構成。於必需嚴格之配置關係之情形時，以使標尺部GPa、GPb之外周面與捲曲於旋轉捲筒DR之基板P之部分外周面成為相同面(自中心線AX2相同之半徑)之方式進行設定。因此，只要使標尺部GPa、GPb之外周面相對於旋轉捲筒DR之基板捲曲用之外周面於直徑方向上僅高於基板P之厚度量即可。 The substrate P is configured to be curled on the inside of the scale portions GPa and GPb that avoid both ends of the rotating drum DR. When a strict arrangement relationship is required, set it so that the outer peripheral surface of the scale portion GPa and GPb and the outer peripheral surface of a portion of the substrate P rolled around the rotary drum DR become the same surface (the same radius from the center line AX2). . Therefore, the outer peripheral surface of the scale portion GPa and GPb may be made larger than the thickness of the substrate P in the diameter direction with respect to the outer peripheral surface for the substrate curling of the rotary roll DR.
為了使旋轉捲筒DR圍繞旋轉中心線AX2旋轉，於旋轉捲筒DR之兩側設置與中心線AX2為同軸之軸部Sf2。對該軸部Sf2賦予來自未圖示之驅動源(馬達或減速齒輪機構等)之旋轉轉矩。 In order to rotate the rotary reel DR around the rotation centerline AX2, shaft portions Sf2 coaxial with the centerline AX2 are provided on both sides of the rotary reel DR. A rotational torque from a drive source (motor, reduction gear mechanism, etc.) (not shown) is applied to the shaft portion Sf2.
進而，本實施形態中，設有編碼器頭EN1、EN2，其等與旋轉捲 筒DR之兩端部之標尺部GPa、GPb之各者對向，並且固設於固定各投影光學系統PL1、PL2、PL3、PL4、...之柱PLM。圖2中，僅例示與標尺部GPa對向之兩個編碼器頭EN1、EN2，於標尺部GPb亦對向地配置有同樣之編碼器頭EN1、EN2。 Furthermore, in this embodiment, encoder heads EN1 and EN2 are provided, which are opposed to each of the scale portions GPa and GPb at both ends of the rotary reel DR, and are fixed to each of the projection optical systems PL1 and PL1. Columns PLM of PL2, PL3, PL4, ... In FIG. 2, only two encoder heads EN1 and EN2 facing the scale part GPa are illustrated, and the same encoder heads EN1 and EN2 are also arranged opposite to the scale part GPb.
如此，藉由將編碼器頭EN1、EN2安裝於柱PLM，可將因溫度變化之影響等產生之各投影光學系統與各編碼器頭EN1、EN2之相對位置變動抑制為較小。 In this way, by mounting the encoder heads EN1 and EN2 on the column PLM, it is possible to suppress the relative position variation of each projection optical system and each of the encoder heads EN1 and EN2 due to the influence of temperature changes and the like.
各編碼器頭EN1、EN2係藉由向標尺部GPa、GPb投射計測用之光束，並對其反射光束(繞射光)進行光電檢測，而產生與標尺部GPa、GPb之周方向之位置變化對應之檢測信號(例如具有90度之相位差之雙相信號)。 The encoder heads EN1 and EN2 project the measurement beam onto the scale sections GPa and GPb, and perform photoelectric detection on their reflected beams (diffracted light), so as to correspond to the circumferential position changes of the scale sections GPa and GPb. Detection signal (for example, a two-phase signal having a phase difference of 90 degrees).
藉由將該檢測信號內插於未圖示之計數器電路而進行數位處理，可以次微米之解析度計測旋轉捲筒DR之角度變化、即其外周面之周方向之位置變化。 By digitally processing the detection signal by interpolating the counter signal into a counter circuit (not shown), it is possible to measure a change in the angle of the reel DR in the sub-micron resolution, that is, a change in the position of the outer peripheral surface in the circumferential direction.
又，如圖2所示，各編碼器頭EN1、EN2設置於設置方位線Le1、Le2上。設置方位線Le1、Le2通過標尺部GPa(GPb)上之計測用光束之投射區域，設定於與圖2中之XZ面平行之面內，其延長線係以與旋轉捲筒DR之旋轉中心線AX2交叉之方式設定之假想線。 As shown in FIG. 2, the encoder heads EN1 and EN2 are disposed on the installation azimuth lines Le1 and Le2. Set the azimuth lines Le1 and Le2 through the projection area of the measuring beam on the scale part GPa (GPb), and set them in a plane parallel to the XZ plane in Fig. 2. The extension lines are aligned with the rotation center line of the rotating drum DR. The imaginary line set by the AX2 cross method.
詳情於下文進行敍述，若於XZ面內觀察，則設置方位線Le1係以與自奇數號之投影光學系統PL1、PL3投射至基板P之成像光束之主光線平行之方式設定。又，若於XZ面內觀察，則設置方位線Le2係以與自偶數號之投影光學系統PL2、PL4投射至基板P之成像光束之主光線平行之方式設定。 The details are described below. If viewed in the XZ plane, the azimuth line Le1 is set to be parallel to the main light rays of the imaging beams projected from the odd-numbered projection optical systems PL1 and PL3 to the substrate P. In addition, if viewed in the XZ plane, the azimuth line Le2 is set to be parallel to the main ray of the imaging beam projected onto the substrate P from the even-numbered projection optical systems PL2 and PL4.
另一方面，於圓筒遮罩DM之兩端側，亦與旋轉中心線AX1同軸地設有軸部Sf1，經由該軸部Sf1，對圓筒遮罩DM賦予來自未圖示之驅動源(馬達等)之旋轉轉矩。於圓筒遮罩DM之旋轉中心線AX1方向之兩端部緣，與旋轉捲筒DR同樣地，編碼器計測之標尺部GPM遍及以旋轉中心線AX1為中心之周方向之整體而分別設置為環狀。 On the other hand, a shaft portion Sf1 is provided coaxially with the rotation center line AX1 at both end sides of the cylindrical mask DM, and a drive source (not shown) is provided to the cylindrical mask DM via the shaft portion Sf1 ( Motor, etc.). At the edges of the two ends of the cylindrical mask DM in the direction of the rotation centerline AX1, similar to the rotation of the reel DR, the encoder measurement GPM is provided throughout the entire circumference in the direction of the rotation centerline AX1 as the center ring.
形成於圓筒遮罩DM之外周面之透過型遮罩圖案配置於避開兩端部之標尺 部GPM之內側。於必需嚴格之配置關係之情形時，以使標尺部GPM之外周面與圓筒遮罩DM之圖案面(圓筒面)之外周面成為相同面(自中心線AX1相同之半徑)之方式進行設定。 A transmissive mask pattern formed on the outer peripheral surface of the cylindrical mask DM is disposed inside the scale portion GPM avoiding both end portions. When a strict arrangement relationship is required, the outer peripheral surface of the scale portion GPM and the outer peripheral surface of the pattern surface (cylindrical surface) of the cylindrical mask DM are made the same surface (the same radius from the center line AX1). set up.
進而，於與圓筒遮罩DM之標尺部GPM之各者對向之位置，自旋轉中心線AX1觀察，於奇數號之投影光學系統PL1、PL3、...之各視野之方向配置有編碼器頭EN11，自旋轉中心線AX1觀察，於偶數號之投影光學系統PL2、PL4、...之各視野之方向配置有編碼器頭EN12。 Further, at positions facing the respective rulers GPM of the cylindrical mask DM, viewed from the rotation center line AX1, codes are arranged in the directions of the respective fields of view of the projection optical systems PL1, PL3, ... of odd numbers. The encoder head EN11 is viewed from the rotation centerline AX1, and the encoder head EN12 is arranged in the direction of each field of view of the even-numbered projection optical systems PL2, PL4, ....
該等編碼器頭EN11、EN12亦安裝於固定投影光學系統PL1、PL2、PL3、PL4、...之保持柱PLM。 These encoder heads EN11 and EN12 are also mounted on the holding columns PLM of the fixed projection optical systems PL1, PL2, PL3, PL4, ....
進而，編碼器頭EN11、EN12與旋轉捲筒DR側之編碼器頭EN1、EN2之配置狀態同樣地配置於設置方位線Le11、Le12上。 Further, the encoder heads EN11 and EN12 are arranged on the installation azimuth lines Le11 and Le12 similarly to the arrangement states of the encoder heads EN1 and EN2 on the DR side of the rotary reel.
設置方位線Le11、Le12通過圓筒遮罩DM之標尺部GPM上投射有編碼器頭之計測用光束之區域，設定於與圖2中之XZ面平行之面內，其延長線係以與圓筒遮罩DM之旋轉中心線AX1交叉之方式設定。 Set the azimuth lines Le11 and Le12 through the cylindrical mask DM. The area where the encoder head's measuring beam is projected on the GPM of the DM is set in a plane parallel to the XZ plane in Fig. 2. The extension lines are aligned with the circle. The rotation center line AX1 of the tube mask DM is set in such a way that it crosses.
於圓筒遮罩DM之情形時，可將刻設於標尺部GPM之刻度或格子圖案與器件(顯示面板之電路等)之遮罩圖案一併描繪、形成於圓筒遮罩DM之外周面，因此可嚴格地設定遮罩圖案與標尺部GPM之相對位置關係。 In the case of the cylindrical mask DM, the scale or grid pattern engraved on the ruler portion and the mask pattern of the device (circuit of the display panel, etc.) can be drawn together and formed on the outer surface of the cylindrical mask DM. Therefore, the relative positional relationship between the mask pattern and the GPM of the scale can be set strictly.
本實施形態中，以透過型例示圓筒遮罩DM，於反射型之圓筒遮罩中，亦可同樣地一併形成標尺部GPM(刻度、格子、原點圖案等)與器件之遮罩圖案。 In this embodiment, a cylindrical mask DM is exemplified by a transmissive type, and in a reflective cylindrical mask, a scale portion GPM (scale, grid, origin pattern, etc.) and a device mask can also be formed together. pattern.
一般，於製作反射型圓筒遮罩之情形時，藉由高精度之車床與研磨機對具有軸部Sf1之金屬圓柱材進行加工，因此可將其外周面之真圓度或軸偏(偏心)抑制為極小。因此，若藉由與遮罩圖案之形成相同之步驟於外周面亦一併形成標尺部GPM，則可進行高精度之編碼器計測。 Generally, in the case of manufacturing a reflective cylindrical mask, a metal cylindrical material having a shaft portion Sf1 is processed by a high-precision lathe and a grinder. Therefore, the roundness or axial deflection of the outer peripheral surface (eccentricity) ) Is suppressed to be extremely small. Therefore, if the scale portion GPM is also formed on the outer peripheral surface by the same steps as the formation of the mask pattern, high-precision encoder measurement can be performed.
如上所述，本實施形態中，將形成於圓筒遮罩DM之標尺部GPM之外周面設定為與遮罩圖案面大致相同之半徑，將形成於旋轉捲筒DR之標尺部GPa、GPb之外周面設定為與基板P之外周面大致相同之半徑。 As described above, in this embodiment, the outer peripheral surface of the scale portion GPM formed on the cylindrical mask DM is set to have a radius substantially the same as that of the mask pattern surface, and the scale portions GPa and GPb of the rotary drum DR are formed. The outer peripheral surface is set to have substantially the same radius as the outer peripheral surface of the substrate P.
因此，編碼器頭EN11、EN12可於與圓筒遮罩DM上之遮罩圖案面(照明系統IU之照明區域)相同直徑方向之位置檢測標尺部GPM，編碼器頭EN1、EN2可於與捲曲於旋轉捲筒DR之基板P上之投影區域(投影像之成像面)相同直徑方向之位置檢測標尺部GPa、GPb。 Therefore, the encoder heads EN11 and EN12 can detect the scale GPM at the same diameter position as the mask pattern surface (illumination area of the lighting system IU) on the cylindrical mask DM, and the encoder heads EN1 and EN2 can be used with curling. The scale portions GPa and GPb are detected at positions in the same diameter direction of the projection area (the imaging surface of the projected image) on the substrate P of the rotary reel DR.
因此，可減小因計測位置與處理位置於旋轉系統之直徑方向不同而產生之阿貝誤差。 Therefore, it is possible to reduce the Abbe error caused by the difference between the measurement position and the processing position in the diameter direction of the rotating system.
其次，參照圖3，說明本實施形態之投影光學系統PL1~PL4、...之具體構成。各投影光學系統均為相同之構成，因此作為代表僅說明投影光學系統PL1之構成。圖3所示之投影光學系統PL1具備反射折射型之遠心之第1成像光學系統51與第2成像光學系統58。 Next, a specific configuration of the projection optical systems PL1 to PL4,... According to this embodiment will be described with reference to FIG. 3. Since each projection optical system has the same configuration, only the configuration of the projection optical system PL1 will be described as a representative. The projection optical system PL1 shown in FIG. 3 includes a telecentric first imaging optical system 51 and a second imaging optical system 58.
第1成像光學系統51係由複數個透鏡元件、焦距修正光學構件44、像偏移修正光學構件45、第1偏向構件50、配置於瞳面之第1凹面鏡52等構成。 The first imaging optical system 51 includes a plurality of lens elements, a focal length correction optical member 44, an image shift correction optical member 45, a first deflection member 50, a first concave mirror 52 disposed on a pupil surface, and the like.
第1成像光學系統51係藉由來自照明系統IU之照明光D1(其主光線為EL1)將形成於圓筒遮罩DM之圖案面(外周面)上之照明區域IR1內呈現之遮罩圖案之像成像於配置有視野光闌(field stop)43之中間像面。 The first imaging optical system 51 is a mask pattern to be formed in the illumination area IR1 on the pattern surface (outer peripheral surface) of the cylindrical mask DM by the illumination light D1 (the main light is EL1) from the illumination system IU. The image is formed on an intermediate image plane provided with a field stop 43.
第2成像光學系統58係由複數個透鏡元件、第2偏向構件57、配置於瞳面之第2凹面鏡59、倍率修正用光學構件47等構成。 The second imaging optical system 58 includes a plurality of lens elements, a second deflection member 57, a second concave mirror 59 arranged on the pupil surface, a magnification correction optical member 47, and the like.
第2成像光學系統58係將由第1成像光學系統51作成之中間像中之由視野光闌43之孔徑形狀(例如梯形)限制之像重新成像於基板P之投影區域PA1內。 The second imaging optical system 58 re-images the image restricted by the aperture shape (for example, trapezoidal shape) of the field diaphragm 43 in the intermediate image created by the first imaging optical system 51 in the projection area PA1 of the substrate P.
以上之投影光學系統PL1之構成中，焦距修正光學構件44係對形 成於基板P上之遮罩之圖案像(以下稱為投影像)之聚焦狀態進行微調整，像偏移修正光學構件45係使投影像於像面內微小地橫向偏移，倍率修正用光學構件47係以±數十ppm左右之範圍對投影像之倍率進行微小修正。 In the configuration of the above-mentioned projection optical system PL1, the focal length correction optical member 44 finely adjusts the focus state of a pattern image (hereinafter referred to as a projection image) of a mask formed on the substrate P, and the image shift correction optical member 45 is The projected image is shifted slightly laterally within the image plane, and the magnification correction optical member 47 performs a small correction on the magnification of the projected image within a range of about several tens of ppm.
進而，於投影光學系統PL1設有旋轉修正機構46，該旋轉修正機構46係使第1偏向構件50圍繞與圖3中之Z軸平行之軸進行微小旋轉，而使成像於基板P上之投影像於像面內進行微小旋轉。 Further, a rotation correction mechanism 46 is provided in the projection optical system PL1. The rotation correction mechanism 46 makes the first deflection member 50 perform a small rotation around an axis parallel to the Z axis in FIG. 3 to project the image formed on the substrate P. The image is rotated slightly within the image plane.
來自圓筒遮罩DM上之照明區域IR1內之圖案之成像光束EL2自照明區域IR1向法線方向出射，通過焦距修正光學構件44、像偏移修正光學構件45，於第1偏向構件50之第1反射面(平面鏡)p4反射，通過複數個透鏡元件而於第1凹面鏡52反射，再次通過複數個透鏡元件而於第1偏向構件50之第2反射面(平面鏡)p5反射，從而到達視野光闌43。 The imaging beam EL2 from the pattern in the illumination area IR1 on the cylindrical mask DM is emitted from the illumination area IR1 to the normal direction, and passes through the focal length correction optical member 44 and the image shift correction optical member 45 to the first deflection member 50. The first reflecting surface (planar mirror) p4 reflects, and is reflected by the plurality of lens elements on the first concave mirror 52, and again reflects on the second reflecting surface (plane mirror) p5 of the first deflection member 50 through the plurality of lens elements, thereby reaching the field of view. Iris 43.
本實施形態中，將一併包含圖2(或圖1)中所示之圓筒遮罩DM之旋轉中心線AX1與旋轉捲筒DR之旋轉中心線AX2的平面作為中心面p3(與YZ面平行)。於此情形時，第1成像光學系統51之光軸AX3與第2成像光學系統58之光軸AX4均以與中心面p3正交之方式配置。 In this embodiment, a plane including the rotation center line AX1 of the cylindrical mask DM and the rotation center line AX2 of the rotating drum DR shown in FIG. 2 (or FIG. 1) is used as the center plane p3 (and the YZ plane). parallel). In this case, both the optical axis AX3 of the first imaging optical system 51 and the optical axis AX4 of the second imaging optical system 58 are arranged so as to be orthogonal to the center plane p3.
本實施形態中，於在XZ面內觀察時，使照明區域IR1相對於中心面p3向-X方向偏移既定量，因此將通過照明區域IR1內之中心之照明光D1之主光線EL1之延長線以與圓筒遮罩DM之旋轉中心線AX1交叉之方式設定。 In this embodiment, when viewed in the XZ plane, the illumination region IR1 is shifted from the center plane p3 in the -X direction by a predetermined amount. Therefore, the main ray EL1 of the illumination light D1 passing through the center in the illumination region IR1 is extended. The line is set so as to cross the rotation center line AX1 of the cylindrical mask DM.
藉此，來自位於照明區域IR1內之中心點之圖案之成像光束EL2之主光線EL3亦以相對於中心面p3而於XZ面內傾斜之狀態行進，到達第1偏向構件50之第1反射面p4。 Thereby, the main ray EL3 from the imaging beam EL2 of the pattern located at the center point in the illumination area IR1 also travels in a state inclined in the XZ plane with respect to the center plane p3, and reaches the first reflection surface of the first deflection member 50 p4.
第1偏向構件50係於Y軸方向延伸之三角稜鏡。本實施形態中，第1反射面p4與第2反射面p5之各者包含形成於三角稜鏡之表面之鏡面(反射膜之表面)。 The first deflection member 50 is a triangular ridge extending in the Y-axis direction. In the present embodiment, each of the first reflection surface p4 and the second reflection surface p5 includes a mirror surface (a surface of a reflection film) formed on the surface of the triangular ridge.
第1偏向構件50係以使自照明區域IR1至第1反射面p4之主光線EL3於XZ面內相對於中心面p3傾斜、且使自第2反射面p5至視野光闌43之主光線EL3與中心面p3平行之方式，使成像光束EL2偏向。 The first deflecting member 50 is such that the main ray EL3 from the illumination area IR1 to the first reflection surface p4 is inclined with respect to the center plane p3 in the XZ plane, and the main ray EL3 from the second reflection surface p5 to the field diaphragm 43 is inclined. The imaging beam EL2 is deflected in a manner parallel to the center plane p3.
為形成此種光路，本實施形態中，將第1偏向構件50之第1反射面p4與第2反射面p5相交之稜線配置於光軸AX3上。於將包含該稜線及光軸AX3且與XY面平行之平面設為p6時，第1反射面p4與第2反射面p5相對於該平面p6以非對稱之角度配置。 In order to form such an optical path, in this embodiment, a ridge line where the first reflection surface p4 and the second reflection surface p5 of the first deflection member 50 intersect is arranged on the optical axis AX3. When a plane including the ridgeline and the optical axis AX3 and parallel to the XY plane is defined as p6, the first reflecting surface p4 and the second reflecting surface p5 are arranged at an asymmetrical angle with respect to the plane p6.
具體而言，若將第1反射面p4相對於平面p6之角度設為θ1，將第2反射面p5相對於平面p6之角度設為θ2，則本實施形態中，角度(θ1+θ2)設定為未達90°，角度θ1設定為未達45°，角度θ2實質上設定為45°。 Specifically, if the angle of the first reflective surface p4 with respect to the plane p6 is θ1 and the angle of the second reflective surface p5 with respect to the plane p6 is θ2, in this embodiment, the angle (θ1 + θ2) is set The angle θ1 is set to less than 90 °, and the angle θ2 is set to substantially 45 °.
藉由將於第1反射面p4反射而入射至複數個透鏡元件之主光線EL3與光軸AX3平行地設定，該主光線EL3可通過第1凹面鏡52之中心、即與瞳面之光軸AX3之交點，可確保遠心之成像狀態。 The main light ray EL3 reflected from the first reflecting surface p4 and incident on the plurality of lens elements is set in parallel with the optical axis AX3. The main light EL3 can pass through the center of the first concave mirror 52, that is, the optical axis AX3 of the pupil surface. The intersection point can ensure the telecentric imaging state.
因此，圖3中，只要將照明區域IR1與第1反射面p4間之主光線EL3相對於中心面p3之於XZ面內之傾斜角設為θd，而如下式(1)般設定第1反射面p4之角度θ1即可。 Therefore, in FIG. 3, as long as the inclination angle of the main ray EL3 between the illumination area IR1 and the first reflection surface p4 with respect to the center plane p3 in the XZ plane is θd, and the first reflection is set as shown in the following formula (1) The angle θ1 of the plane p4 is sufficient.
θ1=45°-(θd/2)...(1) θ1 = 45 °-(θd / 2) ... (1)
通過第1成像光學系統51且通過視野光闌43之成像光束EL2於作為第2成像光學系統58之元件之第2偏向構件57之第3反射面(平面鏡)p8反射，通過複數個透鏡元件，到達配置於瞳面之第2凹面鏡59。 The imaging beam EL2 passing through the first imaging optical system 51 and passing through the field diaphragm 43 is reflected by the third reflecting surface (planar mirror) p8 of the second deflection member 57 which is an element of the second imaging optical system 58 and passes through a plurality of lens elements. Reached the second concave mirror 59 arranged on the pupil surface.
於第2凹面鏡59反射之成像光束EL2再次通過複數個透鏡元件而於第2偏向構件57之第4反射面(平面鏡)p9反射，通過倍率修正用光學構件47，而到達基板P上之投影區域PA1。 The imaging light beam EL2 reflected by the second concave mirror 59 again passes through a plurality of lens elements and is reflected on the fourth reflection surface (planar mirror) p9 of the second deflection member 57. The magnification correction optical member 47 reaches the projection area on the substrate P. PA1.
藉此，照明區域IR1內呈現之圖案之像以等倍(×1)投影於投影區域PA1內。 Thereby, the image of the pattern presented in the illumination area IR1 is projected into the projection area PA1 at equal magnification (× 1).
第2偏向構件57亦為於Y軸方向延伸之三角稜鏡。本實施形態中，第3反射面p8與第4反射面p9之各者包含形成於三角稜鏡之表面之鏡面(反射膜之表面)。 The second deflection member 57 is also a triangular ridge extending in the Y-axis direction. In the present embodiment, each of the third reflection surface p8 and the fourth reflection surface p9 includes a mirror surface (the surface of the reflection film) formed on the surface of the triangular ridge.
第2偏向構件57係以使視野光闌43與第3反射面p8間之主光線EL3於XZ面內與中心面p3平行、且使第4反射面p9與投影區域PA1間之主光線EL3相對於中心面p3而於XZ面內傾斜之方式，使成像光束EL2偏向。 The second deflecting member 57 is such that the main ray EL3 between the field diaphragm 43 and the third reflection surface p8 is parallel to the center plane p3 in the XZ plane, and the main ray EL3 between the fourth reflection surface p9 and the projection area PA1 is opposed to each other. The method of inclining in the center plane p3 and in the XZ plane deflects the imaging beam EL2.
本實施形態中，於在XZ面內觀察時，投影區域PA1亦相對於中心面p3向-X方向僅偏移既定量，因此將到達投影區域PA1內之成像光束之主光線EL3之延長線以與旋轉捲筒DR之旋轉中心線AX2交叉之方式設定。藉此，形成於投影區域PA1之像平面成為支承於旋轉捲筒DR之外周面的基板P之表面(彎曲面)之切平面，可進行確保解析度之忠實之投影曝光。 In this embodiment, when viewed in the XZ plane, the projection area PA1 is also shifted by a predetermined amount in the -X direction with respect to the center plane p3. Therefore, the extension line of the main ray EL3 of the imaging beam reaching the projection area PA1 is It is set to intersect with the rotation center line AX2 of the rotating reel DR. Thereby, the image plane formed in the projection area PA1 becomes a tangent plane of the surface (curved surface) of the substrate P supported on the outer peripheral surface of the rotary reel DR, and a faithful projection exposure can be performed while ensuring resolution.
為了形成此種光路，本實施形態中，將第2偏向構件57之第3反射面p8與第2反射面p9相交之稜線配置於光軸AX4上，於將包含該稜線及光軸AX4且與XY面平行之平面設為p7時，將第3反射面p8與第4反射面p9相對於該平面p7以非對稱之角度配置。 In order to form such an optical path, in this embodiment, a ridge line intersecting the third reflection surface p8 and the second reflection surface p9 of the second deflecting member 57 is arranged on the optical axis AX4, and the ridge line and the optical axis AX4 are included and When the plane parallel to the XY plane is p7, the third reflecting surface p8 and the fourth reflecting surface p9 are arranged at an asymmetrical angle with respect to the plane p7.
具體而言，若將第3反射面p8相對於平面p7之角度設為θ3，將第4反射面p9相對於平面p7之角度設為θ4，則角度(θ3+θ4)設定為未達90°，角度θ4設定為未達45°，角度θ3實質上設定為45°。 Specifically, if the angle of the third reflection surface p8 with respect to the plane p7 is θ3 and the angle of the fourth reflection surface p9 with respect to the plane p7 is θ4, the angle (θ3 + θ4) is set to less than 90 ° The angle θ4 is set to less than 45 °, and the angle θ3 is substantially set to 45 °.
藉由將於第2凹面鏡59反射而自複數個透鏡元件射出而到達第4反射面p9之主光線EL3與光軸AX4平行地設定，可確保遠心之成像狀態。 By setting the principal light beam EL3 reflected from the second concave mirror 59 and emitted from a plurality of lens elements to reach the fourth reflecting surface p9 in parallel with the optical axis AX4, a telecentric imaging state can be ensured.
因此，圖3中，若將第4反射面p9與投影區域PA1間之主光線EL3相對於中心面p3之於XZ面內之傾斜角設為θs，則可將第4反射面p9之角度θ4如下式(2)般設定。 Therefore, in FIG. 3, if the inclination angle of the main ray EL3 between the fourth reflecting surface p9 and the projection area PA1 with respect to the center plane p3 in the XZ plane is set to θs, the angle θ4 of the fourth reflecting surface p9 can be set. It is set as shown in the following formula (2).
θ4=45°-(θs/2)...(2) θ4 = 45 °-(θs / 2) ... (2)
以上，說明了投影光學系統PL1之構成，奇數號之投影光學系統PL3、...係與圖3同樣地構成，偶數號之投影光學系統PL2、PL4...成為如使圖3之配置關於中心面p3而對稱地折回之構成。 In the above, the configuration of the projection optical system PL1 has been described. The odd-numbered projection optical systems PL3, ... are configured in the same manner as in FIG. 3, and the even-numbered projection optical systems PL2, PL4, ... are made as shown in FIG. The center plane p3 is symmetrically folded back.
又，於奇數號、偶數號之任一投影光學系統PL1~PL4...，均設有焦距修正光學構件44、像偏移修正光學構件45、旋轉修正機構46及倍率修正用光學構件47作為成像特性調整機構。 Also, any of the odd-numbered, even-numbered projection optical systems PL1 to PL4, ... are provided with a focal length correction optical member 44, an image shift correction optical member 45, a rotation correction mechanism 46, and a magnification correction optical member 47 as Imaging characteristics adjustment mechanism.
藉此，可針對每個投影光學系統調整基板P上之投影像之投影條件。此處所謂之投影條件，包含基板P上之投影區域之並進位置或旋轉位置、倍率、焦距中之1種以上項目。投影條件可針對同步掃描時之相對於基板P之投影區域之位置之每一者而設定。藉由調整投影像之投影條件，可修正與遮罩圖案比較時之投影像之應變。 Thereby, the projection conditions of the projection image on the substrate P can be adjusted for each projection optical system. The so-called projection conditions include one or more items of a parallel position or a rotation position, a magnification, and a focal length of a projection area on the substrate P. The projection conditions can be set for each of the positions relative to the projection area of the substrate P at the time of synchronous scanning. By adjusting the projection conditions of the projected image, the strain of the projected image when compared with the mask pattern can be corrected.
焦距修正光學構件44係以使2片楔狀稜鏡反向(圖3中，關於X方向反向)，整體上成為透明之平行平板之方式重疊者。不改變該1對稜鏡之相互對向之面間之間隔而使其等於斜面方向滑動，改變作為平行平板之厚度，對有效之光路長進行微調整，對形成於投影區域PA1之圖案像之焦點狀態進行微調整。 The focal length correction optical member 44 overlaps two wedge-shaped ridges (reverse the X direction in FIG. 3) and becomes transparent parallel flat plates as a whole. Do not change the interval between the facing surfaces of the pair of slugs and make it slide in the direction of the inclined plane. Change the thickness as a parallel flat plate, finely adjust the effective optical path length, and adjust the pattern image formed in the projection area PA1. Focus state is fine-tuned.
像偏移修正光學構件45係由可於圖3中之XZ面內傾斜之透明之平行平板玻璃與可於與其正交之方向傾斜之透明之平行平板玻璃構成。藉由調整該2片平行平板玻璃之各傾斜量，可使形成於投影區域PA1之圖案像向X方向或Y方向微小地偏移。 The image shift correction optical member 45 is composed of a transparent parallel plate glass that can be inclined in the XZ plane in FIG. 3 and a transparent parallel plate glass that can be inclined in a direction orthogonal to the same. By adjusting the amounts of inclination of the two parallel plate glasses, the pattern image formed in the projection area PA1 can be slightly shifted in the X direction or the Y direction.
倍率修正用光學構件47係以將凹透鏡、凸透鏡、凹透鏡之3片透鏡以既定間隔配置於同軸，固定前後之凹透鏡，使中間之凸透鏡於光軸(主光線EL3)方向移動之方式構成者。藉此，形成於投影區域PA1之圖案像維持遠心之成像狀態，並且各向同性地以微量進行擴大或縮小。 The magnification correction optical member 47 is configured by arranging three lenses of a concave lens, a convex lens, and a concave lens coaxially at a predetermined interval, fixing the front and rear concave lenses, and moving the middle convex lens in the direction of the optical axis (principle light EL3). Thereby, the pattern image formed in the projection area PA1 maintains a telecentric imaging state, and is expanded or contracted isotropically by a small amount.
旋轉修正機構46係藉由致動器(省略圖示)使第1偏向構件50圍繞與Z軸平行之軸微小地旋轉。藉由旋轉修正機構46，可使形成於投影區域PA1之圖案像於其像面內微小地旋轉。 The rotation correction mechanism 46 rotates the first deflection member 50 slightly around an axis parallel to the Z axis by an actuator (not shown). By the rotation correction mechanism 46, the pattern image formed in the projection area PA1 can be rotated slightly within the image plane.
圖4係表示本實施形態中之照明區域IR及投影區域PA之配置之圖。再者，圖4中，作為投影光學系統PL，設為奇數號之3個投影光學系統PL1、PL3、PL5與偶數號之3個投影光學系統PL2、PL4、PL6排列於Y方向上者。 FIG. 4 is a diagram showing the arrangement of the illumination area IR and the projection area PA in this embodiment. Furthermore, in FIG. 4, as the projection optical system PL, three projection optical systems PL1, PL3, and PL5 with odd numbers and three projection optical systems PL2, PL4, and PL6 with even numbers are arranged in the Y direction.
圖4中之左圖係針對該6個投影光學系統PL1~PL6之各者，自-Z側觀察設定於圓筒遮罩DM上之6個照明區域IR1~IR6之俯視圖。圖4中之右圖係針對6個投影光學系統PL1~PL6之各者，自+Z側觀察由旋轉捲筒DR支承之基板P上之6個投影區域PA1~PA6之俯視圖。圖4中之符號Xs表示圓筒遮罩DM或旋轉捲筒DR之移動方向(旋轉方向)。 The left image in FIG. 4 is a plan view of the six illumination areas IR1 to IR6 set on the cylindrical mask DM, viewed from the -Z side, for each of the six projection optical systems PL1 to PL6. The right view in FIG. 4 is a plan view of the six projection areas PA1 to PA6 on the substrate P supported by the rotary reel DR viewed from the + Z side for each of the six projection optical systems PL1 to PL6. The symbol Xs in FIG. 4 indicates the movement direction (rotation direction) of the cylindrical mask DM or the rotary reel DR.
照明系統IU係個別地照明圓筒遮罩DM上之6個照明區域IR1~IR6。圖4中，各照明區域IR1~IR6係作為於Y方向細長之梯形狀之區域進行說明。再者，如圖3中所說明，於視野光闌43之孔徑形狀為梯形之情形時，各照明區域IR1~IR6亦可為包含梯形區域之長方形區域。 The lighting system IU individually illuminates the six lighting areas IR1 to IR6 on the cylindrical mask DM. In FIG. 4, each of the illumination regions IR1 to IR6 is described as a stepped region elongated in the Y direction. Furthermore, as illustrated in FIG. 3, when the aperture shape of the field diaphragm 43 is trapezoidal, each of the illumination regions IR1 to IR6 may be a rectangular region including a trapezoidal region.
奇數號之照明區域IR1、IR3、IR5為同樣之形狀(梯形或長方形)，且於Y軸方向隔開固定間隔而配置。偶數號之照明區域IR2、IR4、IR6亦於Y軸方向隔開固定間隔而配置。偶數號之照明區域IR2、IR4、IR6具有關於中心面p3與奇數號之照明區域IR1、IR3、IR5對稱之梯形(或長方形)之形狀。 The odd-numbered illumination areas IR1, IR3, and IR5 have the same shape (trapezoidal or rectangular), and are arranged at a fixed interval in the Y-axis direction. Even-numbered illumination areas IR2, IR4, and IR6 are also arranged at regular intervals in the Y-axis direction. The even-numbered illumination areas IR2, IR4, and IR6 have a trapezoidal (or rectangular) shape symmetrical to the central plane p3 and the odd-numbered illumination areas IR1, IR3, and IR5.
又，如圖4所示，6個照明區域IR1~IR6之各者係以於Y方向上，相鄰之照明區域之周邊部重疊一部分之方式配置。 As shown in FIG. 4, each of the six illumination regions IR1 to IR6 is arranged so that a peripheral portion of an adjacent illumination region overlaps a part in the Y direction.
本實施形態中，圓筒遮罩DM之外周面具有形成有圖案之圖案形成區域A3與未形成圖案之圖案未形成區域A4。 In this embodiment, the outer peripheral surface of the cylindrical mask DM has a patterned area A3 in which a pattern is formed and an unformed area A4 in which a pattern is not formed.
圖案未形成區域A4係以框狀地包圍圖案形成區域A3之方式配置，尤其具有 遮蔽照射各照明區域IR1~IR6之照明光束之特性。 The pattern-unformed area A4 is arranged so as to surround the pattern-formed area A3, and in particular has a characteristic of shielding the illumination light beams irradiating the respective illumination areas IR1 to IR6.
圖案形成區域A3隨著圓筒遮罩DM之旋轉而向方向Xs移動，圖案形成區域A3中之Y軸方向之各部分區域通過6個照明區域IR1~IR6中之任一者。換言之，6個照明區域IR1~IR6係以覆蓋圖案形成區域A3之Y軸方向之全寬之方式配置。 The pattern forming area A3 moves in the direction Xs with the rotation of the cylindrical mask DM, and each of the partial areas in the Y-axis direction in the pattern forming area A3 passes any one of the six illumination areas IR1 to IR6. In other words, the six illumination areas IR1 to IR6 are arranged so as to cover the full width in the Y-axis direction of the pattern formation area A3.
圖4中，對應於6個照明區域IR1~IR6之各者，設置6個投影光學系統PL1~PL6。因此，各投影光學系統PL1~PL6係將對應之照明區域IR1~IR6內呈現之遮罩圖案之部分圖案像如圖4中之右圖所示般投影於基板P上之6個投影區域PA1~PA6內。 In FIG. 4, six projection optical systems PL1 to PL6 are provided corresponding to each of the six illumination areas IR1 to IR6. Therefore, each of the projection optical systems PL1 to PL6 projects the partial patterns of the mask patterns in the corresponding illumination areas IR1 to IR6 as shown in the right figure in FIG. 4 onto the six projection areas PA1 to PA1. PA6.
如圖4中之右圖所示，奇數號之照明區域IR1、IR3、IR5中之圖案之像分別投影於在Y軸方向上排列成一行之奇數號之投影區域PA1、PA3、PA5。偶數號之照明區域IR2、IR4、IR6中之圖案之像亦分別投影於在Y軸方向排列成一行之偶數號之投影區域PA2、PA4、PA6。 As shown in the right diagram in FIG. 4, the images of the patterns in the odd-numbered illumination areas IR1, IR3, and IR5 are respectively projected on the odd-numbered projection areas PA1, PA3, and PA5 arranged in a line in the Y-axis direction. The images of the patterns in the even-numbered illumination areas IR2, IR4, and IR6 are also projected on the even-numbered projection areas PA2, PA4, and PA6 arranged in a line in the Y-axis direction, respectively.
奇數號之投影區域PA1、PA3、PA5與偶數號之投影區域PA2、PA4、PA6係關於中心面p3對稱地配置。 The odd-numbered projection areas PA1, PA3, and PA5 and the even-numbered projection areas PA2, PA4, and PA6 are arranged symmetrically about the center plane p3.
6個投影區域PA1~PA6之各者係以於平行於旋轉中心線AX2之方向(Y方向)，相鄰之投影區域之端部(梯形之三角部分)彼此相互重疊之方式配置。因此，隨著旋轉捲筒DR之旋轉而於6個投影區域PA1~PA6曝光之基板P之曝光區域A7於任一處實質上均為相同之曝光量。 Each of the six projection areas PA1 to PA6 is arranged in a direction (Y direction) parallel to the rotation center line AX2, and the ends (triangular portions of the trapezoid) of adjacent projection areas overlap each other. Therefore, with the rotation of the rotating reel DR, the exposure area A7 of the substrate P exposed at the six projection areas PA1 to PA6 is substantially the same exposure amount at any place.
另外，如上述圖1所示，於本實施形態之曝光裝置EX設有對準系統AM，該對準系統AM係用以對形成於基板P上之對準標記、或形成於旋轉捲筒DR上之基準標記、基準圖案進行檢測，而對基板P與遮罩圖案進行位置對準或者對基線或投影光學系統進行校準。以下，參照圖5與圖6對該對準系統AM進行說明。 In addition, as shown in FIG. 1 described above, the exposure apparatus EX of this embodiment is provided with an alignment system AM, which is used to align an alignment mark formed on the substrate P or a rotary reel DR The reference mark and reference pattern on the substrate are detected, and the substrate P and the mask pattern are aligned, or the baseline or projection optical system is calibrated. Hereinafter, the alignment system AM will be described with reference to FIGS. 5 and 6.
圖5係於XZ面內觀察旋轉捲筒DR、編碼器頭EN1、EN2及對準系 統AM1之配置之圖。圖6係於XY面內觀察旋轉捲筒DR、設定於基板P上之6個投影區域PA1~PA6及5個對準系統AM1~AM5之配置之圖。 Fig. 5 is a view of the configuration of the rotating reel DR, the encoder heads EN1, EN2, and the alignment system AM1 in the XZ plane. FIG. 6 is a diagram of the configuration of the rotating reel DR, the six projection areas PA1 to PA6 and the five alignment systems AM1 to AM5 set on the substrate P when viewed in the XY plane.
圖5中，如之前所說明，配置有編碼器頭EN1、EN2之設置方位線Le1、Le2係相對於包含旋轉中心線AX2且與YZ面平行之中心面p3而對稱地傾斜設定。 In FIG. 5, as described above, the setting azimuth lines Le1 and Le2 provided with the encoder heads EN1 and EN2 are symmetrically inclined with respect to the center plane p3 including the rotation center line AX2 and parallel to the YZ plane.
設置方位線Le1、Le2相對於中心面p3之傾斜角係以與到達圖3中所說明之投影區域PA1(或圖4中所示之奇數號之投影區域PA1、PA3、PA5與偶數號之投影區域PA2、PA4、PA6)之中心的主光線EL3自中心面p3之傾斜角θs相等之方式進行設定。 The inclination angles of the azimuth lines Le1 and Le2 relative to the center plane p3 are set so as to reach the projection area PA1 (or the odd-numbered projection areas PA1, PA3, PA5, and even-numbered projections shown in FIG. 3). The main light rays EL3 at the center of the areas PA2, PA4, and PA6) are set so that the inclination angles θs from the center plane p3 are equal.
圖5中，對準系統AM1係由如下者等構成：照明單元GC1，其用以對基板P或旋轉捲筒DR上之標記或圖案照射對準用之照明光；分光鏡GB1，其將該照明光導向至基板P或旋轉捲筒DR；物鏡系統GA1，其將照明光投射至基板P或旋轉捲筒DR，並且入射於標記或圖案產生之光；拍攝系統GD1，其藉由二維CCD、CMOS等拍攝經由物鏡系統GA1與分光鏡GB1而受光之標記或圖案之像(明視野像、暗視野像、螢光像等)。 In FIG. 5, the alignment system AM1 is composed of the following: an illumination unit GC1, which is used to irradiate a mark or pattern on the substrate P or the rotary reel DR with illumination light for alignment; a beam splitter GB1, which illuminates the illumination The light is guided to the substrate P or the rotating reel DR; the objective lens system GA1 projects the illumination light onto the substrate P or the rotating reel DR and is incident on the light generated by the mark or pattern; the photographing system GD1 uses a two-dimensional CCD, CMOS or the like captures an image (bright field image, dark field image, fluorescent image, etc.) of a mark or pattern that is received by the objective lens system GA1 and the beam splitter GB1.
再者，來自照明單元GC1之對準用之照明光係對於基板P上之光感應層幾乎不具有感光度之波長區域之光、例如波長500~800nm左右之光。 Furthermore, the illumination light for alignment from the illumination unit GC1 is light in a wavelength region having almost no sensitivity to the light-sensing layer on the substrate P, for example, light having a wavelength of about 500 to 800 nm.
對準系統AM1之標記或圖案之觀察區域(拍攝區域)係於基板P或旋轉捲筒DR上例如設定為200μm見方左右之範圍。 The observation area (imaging area) of the mark or pattern of the alignment system AM1 is set on the substrate P or the rotary reel DR, for example, in a range of about 200 μm square.
對準系統AM1之光軸、即物鏡系統GA1之光軸係設定於與自旋轉中心線AX1向旋轉捲筒DR之直徑方向延伸之設置方位線La1相同之方向。該設置方位線La1自中心面p3傾斜角度θj，以相對於奇數號之投影光學系統PL1、PL3、PL5之主光線EL3之傾斜角θs為θj>θs之方式進行設定。 The optical axis of the alignment system AM1, that is, the optical axis of the objective lens system GA1 is set in the same direction as the installation azimuth line La1 extending from the rotation center line AX1 to the diameter direction of the rotary reel DR. The inclination angle θj of the set azimuth line La1 from the center plane p3 is set so that the inclination angle θs of the main light beam EL3 with respect to the odd-numbered projection optical systems PL1, PL3, and PL5 is θj> θs.
進而，本實施形態中，於設置方位線La1上，於與旋轉捲筒DR 之標尺部GPa、GPb之各者對向之位置設有與編碼器頭EN1、EN2同樣之編碼器頭EN3。藉此，可精密地計測對準系統AM1於觀察區域(拍攝區域)內對標記或圖案之像進行取樣之瞬間之旋轉捲筒DR之旋轉角度位置(或周方向位置)。 Furthermore, in this embodiment, the encoder head EN3 which is the same as the encoder heads EN1 and EN2 is provided on the installation direction line La1 at a position opposite to each of the scale portions GPa and GPb of the rotary reel DR. Thereby, it is possible to accurately measure the rotation angle position (or the circumferential position) of the rotating reel DR at the instant when the alignment system AM1 samples the image of the mark or pattern in the observation area (shooting area).
再者，於XZ面內觀察時，於與中心面p3正交之X軸之方向亦設有與旋轉捲筒DR之標尺部GPa、GPb之各者對向之編碼器頭EN4。 Furthermore, when viewed in the XZ plane, an encoder head EN4 is also provided in the direction of the X axis orthogonal to the center plane p3, which is opposite to each of the scale portions GPa and GPb of the rotary drum DR.
對準系統AM係與圖5之對準系統AM1為同樣之構成者，如圖6所示般設有5個。圖6中，為了易於判別，僅例示5個對準系統AM1~AM5之各物鏡系統GA1~GA5之配置。 The alignment system AM is the same as the alignment system AM1 of FIG. 5, and five alignment systems are provided as shown in FIG. 6. In FIG. 6, for easy identification, only the configuration of each of the objective lens systems GA1 to GA5 of the five alignment systems AM1 to AM5 is exemplified.
各物鏡系統GA1~GA5之基板P(或旋轉捲筒DR之外周面)上之觀察區域(拍攝區域)Vw如圖6般，以既定之間隔配置於與Y軸(旋轉中心線AX2)平行之方向。通過各觀察區域(拍攝區域)Vw之中心之各物鏡系統GA1~GA5之光軸均與XZ面平行地配置。 The observation area (shooting area) Vw on the substrate P (or the outer peripheral surface of the rotary reel DR) of each objective lens system GA1 to GA5 is arranged parallel to the Y axis (rotation center line AX2) at a predetermined interval as shown in FIG. 6. direction. The optical axes of the objective lens systems GA1 to GA5 passing through the center of each observation area (imaging area) Vw are arranged parallel to the XZ plane.
如上述圖2所示，於旋轉捲筒DR之兩端側設有標尺部GPa、GPb，於其等之內側，遍及整周地刻設有由凹狀槽或凸狀緣形成之寬度較窄之限制帶CLa、CLb。 As shown in FIG. 2 above, ruler portions GPa and GPb are provided on both ends of the rotating reel DR, and a narrow width formed by concave grooves or convex edges is engraved throughout the entire circumference. The limitation bands are CLa and CLb.
基板P之Y方向之寬度設定為小於該2條限制帶CLa、CLb之Y方向之間隔。基板P密接於旋轉捲筒DR之外周面中由限制帶CLa、CLb夾持之內側區域而受到支承。 The width in the Y direction of the substrate P is set to be smaller than the interval in the Y direction of the two restriction bands CLa and CLb. The substrate P is in close contact with the inner area of the outer peripheral surface of the rotary reel DR sandwiched by the restriction bands CLa and CLb and is supported.
於基板P上，如上述圖4中之右圖所示，藉由6個投影區域PA1~PA6之各者而曝光之曝光區域A7於X方向隔開既定之間隔而配置。 On the substrate P, as shown in the right figure in FIG. 4 described above, the exposure areas A7 exposed by each of the six projection areas PA1 to PA6 are arranged at predetermined intervals in the X direction.
存在於基板P之各曝光區域A7已形成有圖案，而於其上重疊新圖案並進行曝光之情況。於此情形時，於基板P上之曝光區域A7之周圍，用以位置對準之複數個標記(對準標記)形成為例如十字形狀。 In some cases, a pattern is formed in each of the exposed areas A7 of the substrate P, and a new pattern is superposed thereon and exposed. In this case, around the exposure area A7 on the substrate P, a plurality of marks (alignment marks) for positional alignment are formed into a cross shape, for example.
圖6中，標記Ks1係於曝光區域A7之-Y側之周邊區域在X方向上 以固定間隔設置，標記Ks5係於曝光區域A7之+Y側之周邊區域在X方向上以固定間隔設置。標記Ks2、Ks3、Ks4係於在X方向上相鄰之兩個曝光區域A7間之空白區域，於Y方向上隔開間隔而設置成一行。 In FIG. 6, the marker Ks1 is set at a constant interval in the X direction on the peripheral area on the -Y side of the exposure area A7, and the marker Ks5 is set at the fixed interval in the X direction on the + Y side of the exposure area A7. The marks Ks2, Ks3, and Ks4 are blank areas between two exposure areas A7 adjacent in the X direction, and are arranged in a line at intervals in the Y direction.
該等對準標記中，標記Ks1係以如下方式設定：於物鏡系統GA1(對準系統AM1)之拍攝區域Vw內，於搬送基板P之期間依序捕捉。標記Ks5係以如下方式設定：於物鏡系統GA5(對準系統AM5)之拍攝區域Vw內，於搬送基板P之期間依序捕捉。 Among the alignment marks, the marks Ks1 are set in such a manner that they are sequentially captured within the imaging area Vw of the objective lens system GA1 (alignment system AM1) during the transfer of the substrate P. The mark Ks5 is set in such a manner as to sequentially capture within the imaging area Vw of the objective lens system GA5 (alignment system AM5) during the substrate P transfer.
標記Ks2、Ks3、Ks4係分別以於物鏡系統GA2(對準系統AM2)、物鏡系統GA3(對準系統AM3)、物鏡系統GA4(對準系統AM4)之各拍攝區域Vw內進行捕捉之方式決定Y方向之位置。 The marks Ks2, Ks3, and Ks4 are determined by capturing in the respective shooting areas Vw of the objective lens system GA2 (alignment system AM2), objective lens system GA3 (alignment system AM3), and objective lens system GA4 (alignment system AM4). Position in the Y direction.
於如上之構成中，於對基板P上之曝光區域A7與圓筒遮罩DM上之遮罩圖案進行相對位置對準而曝光時，於各對準系統AM1~AM5之拍攝區域Vw內，於對應之標記Ks1~Ks5進入之時點，取樣拍攝資料，並且自編碼器頭EN3讀取此時之旋轉捲筒DR之角度位置(周方向位置)並進行記憶。 In the above configuration, when the exposure area A7 on the substrate P and the mask pattern on the cylindrical mask DM are aligned with each other and exposed, the exposure area Vw of each of the alignment systems AM1 to AM5 is When the corresponding marks Ks1 ~ Ks5 enter, the shooting data is sampled, and the angular position (circumferential position) of the rotating drum DR at this time is read from the encoder head EN3 and stored.
藉由對各拍攝資料進行圖像解析，求出以各拍攝區域Vw為基準之各標記Ks1~Ks5之XY方向之偏移量。 The image analysis is performed on each photographed data to obtain the offset amount in the XY direction of each mark Ks1 to Ks5 based on each photographed area Vw.
於藉由預先校準等而準確地求出各對準系統AM1~AM5之拍攝區域Vw與各投影區域PA1~PA6之相對位置關係、即基線之情形時，基於所求得之各標記Ks1~Ks5之XY方向之偏移量及由編碼器頭EN3讀取並記憶之旋轉捲筒DR之角度位置(周方向位置)，可自配置於曝光位置之兩個編碼器頭EN1、EN2之各計測值準確地推斷基板P上之曝光區域A7與各投影區域PA1~PA6之位置關係(動態地變化之位置關係)。 When the relative positional relationship between the shooting area Vw of each alignment system AM1 ~ AM5 and each projection area PA1 ~ PA6, that is, the baseline situation is accurately obtained by pre-calibration, etc., based on the obtained marks Ks1 ~ Ks5 The offset in the XY direction and the angular position (circumferential position) of the rotary reel DR read and memorized by the encoder head EN3 can be measured from the two encoder heads EN1 and EN2 arranged at the exposure position. The positional relationship between the exposure area A7 on the substrate P and each of the projection areas PA1 to PA6 (the positional relationship that changes dynamically) is accurately inferred.
因此，逐次比較兩個編碼器頭EN1、EN2之各計測值與圓筒遮罩DM側之編碼器頭EN11、EN12之計測值，而進行同步控制，藉此可使遮罩圖案精密地重疊 於基板P之曝光區域A7上而曝光。 Therefore, the measured values of the two encoder heads EN1 and EN2 are successively compared with the measured values of the encoder heads EN11 and EN12 on the DM side of the cylindrical mask, and the synchronous control is performed, so that the mask pattern can be accurately overlapped with The substrate P is exposed on an exposed area A7.
如上之曝光中，基板P較薄為100μm左右，存在形成有作為基底層之ITO等透明膜之情況。 In the above-mentioned exposure, the substrate P may be as thin as about 100 μm, and a transparent film such as ITO may be formed as a base layer.
於使用此種基板P之情形時，若支承其之旋轉捲筒DR之外周面之反射率相對較高、或於其表面存在多個數微米寬度程度之細痕，則曝光用照明光於旋轉捲筒DR之外周面反射或散射、繞射，自基板P之背面側返回至表面側，對光感應層造成本來之遮罩圖案上不存在之雜訊之曝光。 In the case of using such a substrate P, if the outer peripheral surface of the rotating drum DR supporting it has a relatively high reflectance, or there are multiple fine marks with a width of several micrometers on its surface, the exposure illumination light is rotated. The outer peripheral surface of the roll DR reflects, scatters, or diffracts, and returns from the back surface side to the surface side of the substrate P, thereby exposing the light-sensing layer to noise that does not exist on the original mask pattern.
因此，旋轉捲筒DR之外周面中，至少與基板P上之曝光區域A7接觸之部分其表面局部地具有次微米程度之平坦性，可使反射率均勻地降低。反射率例如可相對於曝光用照明光為50、45、40、35、30、25、20、15、10或5%以下，較佳為20%以下。 Therefore, at least the portion of the outer peripheral surface of the rotating drum DR that is in contact with the exposed area A7 on the substrate P has a flatness of the sub-micron level locally, and the reflectance can be reduced uniformly. The reflectance may be, for example, 50, 45, 40, 35, 30, 25, 20, 15, 10, or 5% with respect to the illumination light for exposure, and preferably 20% or less.
再者，上述數值為一例，本發明並不限定於此。 The above numerical values are examples, and the present invention is not limited thereto.
以下，使用圖7、圖8對旋轉捲筒DR之外周面之構造進行說明。圖7係表示密接於旋轉捲筒DR之外周面而受到支承之基板P之構成及相對於曝光用之成像光束EL2(照明光IE0)與對準用之照明光ILa之反射之情況的圖。圖8係表示旋轉捲筒DR之外周面之剖面構造之圖。 Hereinafter, the structure of the outer peripheral surface of the rotary reel DR will be described using FIGS. 7 and 8. FIG. 7 is a diagram showing the configuration of the substrate P supported in close contact with the outer peripheral surface of the rotating reel DR and the reflection of the imaging beam EL2 (illumination light IE0) for exposure and the illumination light ILa for alignment. FIG. 8 is a view showing a cross-sectional structure of the outer peripheral surface of the rotary drum DR.
圖7中，沿主光線EL3行進之成像光束EL2(照明光IE0)投射至形成於厚度Tp之基板P之表面之光感應層Pb3。若光感應層Pb3之基底層Pb2為ITO等光透過性較高之材質，則透過基底層Pb2之照明光IE1相對於原來之照明光IE0幾乎未衰減地朝向其下之基板P之母材Pb1。 In FIG. 7, an imaging light beam EL2 (illumination light IE0) traveling along the main ray EL3 is projected onto the light-sensing layer Pb3 formed on the surface of the substrate P having a thickness Tp. If the base layer Pb2 of the light-sensing layer Pb3 is made of a material with high light permeability such as ITO, the illumination light IE1 passing through the base layer Pb2 is almost attenuated toward the base material Pb1 of the substrate P below the original illumination light IE0. .
基板P之母材Pb1為PET、PEN等透明樹脂膜，且厚度較薄為100μm以下，因此於照明光IE0(IE1)之波長區域為350nm以上之情形時，母材Pb1相對於該照明光IE1具有相對較大之透過率(80%以上)。 The base material Pb1 of the substrate P is a transparent resin film such as PET and PEN, and the thickness is less than 100 μm. Therefore, when the wavelength range of the illumination light IE0 (IE1) is 350 nm or more, the base material Pb1 is relative to the illumination light IE1. Has a relatively large transmittance (more than 80%).
因此，透過母材Pb1之照明光IE1到達至旋轉捲筒DR之外周表面DRs。若外 周表面DRs之反射率不為零，則藉由透過母材Pb1之照明光IE1，自外周表面DRs產生反射光(亦包含散射光、繞射光)IE2，以母材Pb1、基底層Pb2之順序，返回至光感應層Pb3處。反射光IE2並非本來之圖案化用之成像光束EL2，因此成為雜訊而對光感應層Pb3造成不必要之曝光。 Therefore, the illumination light IE1 transmitted through the base material Pb1 reaches the outer peripheral surface DRs of the rotating drum DR. If the reflectance of the peripheral surface DRs is not zero, the reflected light (including scattered light and diffracted light) IE2 is generated from the peripheral surface DRs through the illumination light IE1 of the base material Pb1, and the base material Pb1 and the base layer Pb2 are used. In sequence, return to the light sensing layer Pb3. The reflected light IE2 is not the imaging beam EL2 for the original patterning, so it becomes noise and causes unnecessary exposure to the light-sensing layer Pb3.
該雜訊之一例如為由成像光束EL2作成之圖案像之散焦像。 One of the noises is, for example, a defocused image of a pattern image created by the imaging beam EL2.
於如上述圖3之投影光學系統PL1(~PL6)之情形時，由曝光用照明光之波長λ與數值孔徑NA大致決定解像度(R)與焦點深度(DOF)。例如，於使用波長365nm(i射線)之照明光，且解像度(R)為可成像線寬3μm之投影光學系統中，將k係數設為0.35左右之情形時，該焦點深度(DOF)為70μm左右。 In the case of the projection optical system PL1 (~ PL6) of FIG. 3 described above, the resolution (R) and the depth of focus (DOF) are approximately determined by the wavelength λ and the numerical aperture NA of the exposure illumination light. For example, in a projection optical system using illumination light with a wavelength of 365 nm (i-rays) and a resolution (R) of an imageable line width of 3 μm, when the k coefficient is set to about 0.35, the depth of focus (DOF) is 70 μm about.
若基板P之母材Pb1之厚度為100μm，則於旋轉捲筒DR之外周表面DRs，成像光束EL2以稍許散焦狀態投射，於外周表面DRs反射之反射光IE2於光感應層Pb3之面進而成為散焦之像光束。 If the thickness of the base material Pb1 of the substrate P is 100 μm, the imaging beam EL2 is projected in a slightly defocused state on the outer peripheral surface DRs of the rotating drum DR, and the reflected light IE2 reflected on the outer peripheral surface DRs is on the surface of the light-sensing layer Pb3. Become a defocused image beam.
因此，於光感應層Pb3，該圖案像自身之模糊像亦與焦距吻合之成像光束EL2之圖案像一併重疊而投射。即，有可能產生不期望之不必要之圖案像(模糊之像等)映入光感應層Pb3之問題。 Therefore, in the light-sensing layer Pb3, the blurred image of the pattern image itself is also overlapped with the pattern image of the imaging beam EL2 that matches the focal length and projected. That is, there may be a problem that an unnecessary pattern image (such as a blurred image) is reflected in the light-sensing layer Pb3.
另一方面，關於藉由對準系統AM1~AM5進行之標記檢測，例如，於可使用高反射率之物質、例如鋁(Al)等作為形成於基板P之母材Pb1上之對準用標記Ks1~Ks5之材質的情形時，照射至該等標記Ks1~Ks5之照明光ILa之反射光ILb之強度相對較大，因此可進行良好之標記觀察、檢測。 On the other hand, regarding the mark detection by the alignment systems AM1 to AM5, for example, an alignment mark Ks1 formed on the base material Pb1 of the substrate P can be used as a material having a high reflectivity, such as aluminum (Al). In the case of the material of ~ Ks5, the intensity of the reflected light ILb of the illumination light ILa irradiated to the marks Ks1 ~ Ks5 is relatively large, so good mark observation and detection can be performed.
然而，於標記Ks1~Ks5之反射率不高之情形時，通過標記Ks1~Ks5之周圍之透明區域的照明光ILa到達旋轉捲筒DR之外周表面DRs，於此處反射之光與來自標記Ks1~Ks5之反射光ILb一併由拍攝元件拍攝，因此存在標記Ks1~Ks5之像對比度降低之情況。 However, when the reflectivity of the markers Ks1 ~ Ks5 is not high, the illumination light ILa passing through the transparent area around the markers Ks1 ~ Ks5 reaches the outer peripheral surface DRs of the rotating reel DR, and the reflected light here comes from the marker Ks1 The reflected light ILb of ~ Ks5 is captured by the imaging element together, so the contrast of the images marked Ks1 ~ Ks5 may be reduced.
根據以上情況，本實施形態中之旋轉捲筒DR之外周表面DRs係以相對於曝光用之照明光IE0具有約50、45、40、35、30、25、20、15、10或5%以下之反射率之方式形成。 According to the above, the outer peripheral surface DRs of the rotating reel DR in this embodiment is about 50, 45, 40, 35, 30, 25, 20, 15, 10, or 5% with respect to the illumination light IE0 for exposure. The way the reflectivity is formed.
因此，本實施形態之旋轉捲筒DR中，於鐵製(SUS)或鋁製(Al)之圓筒狀之基材DR1之表面鍍敷由鉻(Cr)或銅(Cu)所構成之基底層DR2(厚度Td2)。於對該基底層DR2之表面進行光學研磨而充分減小局部之表面粗糙度後，於其上形成由氧化鉻(Cr2O3)或類鑽碳(DLC)所構成之頂層DR3(厚度Td3)。 Therefore, in the rotating drum DR of this embodiment, the surface of the cylindrical substrate DR1 made of iron (SUS) or aluminum (Al) is plated with a substrate made of chromium (Cr) or copper (Cu). Layer DR2 (thickness Td2). After optically polishing the surface of the base layer DR2 to sufficiently reduce the local surface roughness, a top layer DR3 (thickness Td3) composed of chromium oxide (Cr 2 O 3 ) or diamond-like carbon (DLC) is formed thereon. ).
基底層DR2之厚度Td2可於數百nm~數μm左右之範圍內任意地進行設定，但為了調整外周表面DRs之反射率，頂層DR3之厚度Td3存在某種條件範圍。 The thickness Td2 of the base layer DR2 can be arbitrarily set within a range of several hundred nm to several μm, but in order to adjust the reflectance of the peripheral surface DRs, the thickness Td3 of the top layer DR3 exists in a certain range of conditions.
因此，於使基底層DR2為鉻(Cr)，使頂層DR3為氧化鉻(Cr2O3)之情形時，參照圖9對將頂層DR3之厚度Td3作為參數之外周表面DRs之反射率之波長特性(分光反射率)進行說明。 Therefore, when the base layer DR2 is chromium (Cr) and the top layer DR3 is chromium oxide (Cr 2 O 3 ), referring to FIG. 9, the wavelength of the reflectance of the outer peripheral surface DRs using the thickness Td3 of the top layer DR3 as a parameter The characteristics (spectral reflectance) will be described.
圖9係將氧化鉻之折射率n設為2.2、將吸收係數k設為0之情形之模擬結果的圖，縱軸表示外周表面DRs之反射率(%)，橫軸表示波長(nm)。圖9中，表示將由氧化鉻構成之頂層DR3之厚度Td3於0~150nm之間以每30nm進行變更之6種分光反射率之特性。 FIG. 9 is a graph of simulation results when the refractive index n of chromium oxide is set to 2.2 and the absorption coefficient k is set to 0. The vertical axis represents the reflectance (%) of the outer peripheral surface DRs, and the horizontal axis represents the wavelength (nm). In FIG. 9, there are shown six types of spectral reflectance characteristics in which the thickness Td3 of the top layer DR3 composed of chromium oxide is changed from 0 to 150 nm every 30 nm.
例如，若將氧化鉻之頂層DR3之厚度Td3設為30nm左右，則可遍及350nm~500nm之波長頻帶之整體而使反射率為20%以下(模擬上為15%以下)。於此情形時，若以相對於波長436nm(g射線曝光用光)約7%之反射率，使對準用照明光ILa之波長為500nm程度左右，則相對於此成為約12%之反射率。 For example, if the thickness Td3 of the top layer DR3 of chromium oxide is set to about 30 nm, the reflectance can be 20% or less (15% or less in the simulation) over the entire wavelength band of 350 to 500 nm. In this case, if the reflectance of the alignment illumination light ILa is about 500 nm with a reflectance of about 7% with respect to the wavelength of 436 nm (light for g-ray exposure), the reflectance will be about 12%.
又，若使曝光用光(照明光IE0)之波長為405nm(h射線附近之藍光用半導體體雷射等)，則藉由將氧化鉻之頂層DR3之厚度Td3設為120nm左右，而可以曝光用光之波長保持最小值並且相對於500nm左右之對準用之照明光ILa成為40%左右之反射率。 In addition, if the wavelength of the exposure light (illumination light IE0) is 405 nm (a semiconductor laser for blue light near h-rays, etc.), exposure can be performed by setting the thickness Td3 of the top layer DR3 of chromium oxide to about 120 nm. The wavelength of the light is kept at a minimum, and the reflectance of the illumination light ILa for alignment at about 500 nm is about 40%.
反之，若將氧化鉻之頂層DR3之厚度Td3設為60nm或150nm左右，則相對於波段為350~436nm之曝光用光(照明光IE0)之反射率提高為50%左右，相對於波長500nm之對準用照明光ILa之反射率為40%以下。 Conversely, if the thickness Td3 of the top layer DR3 of chromium oxide is set to about 60 nm or 150 nm, the reflectance of the exposure light (illumination light IE0) in the wavelength band of 350 to 436 nm is increased to about 50%, compared to the wavelength of 500 nm. The reflectance of the alignment illumination light ILa is 40% or less.
又，若將氧化鉻之頂層DR3之厚度Td3設為90nm左右，則相對於較波長350nm短之波長頻帶之紫外光，可將外周表面DRs之反射率減少為30%以下，並且外周表面DRs相對於波長500nm之對準用照明光ILa之反射率可增加至60%左右。 In addition, if the thickness Td3 of the top layer DR3 of chromium oxide is set to about 90 nm, the reflectance of the peripheral surface DRs can be reduced to 30% or less with respect to ultraviolet light in a wavelength band shorter than the wavelength of 350 nm. The reflectance of the alignment illumination light ILa at a wavelength of 500 nm can be increased to about 60%.
根據圖9之模擬結果判斷，藉由控制由氧化鉻構成之頂層DR3之厚度Td3，可於數%~50%左右之間任意地設定外周表面DRs相對於對準用照明光與曝光用照明光之反射率，可設定為低於未設置由氧化鉻構成之頂層DR3(Td3=0nm)而僅設置由單純之鉻構成之基底層DR2之情形之反射率。 Judging from the simulation results in FIG. 9, by controlling the thickness Td3 of the top layer DR3 composed of chromium oxide, the peripheral surface DRs can be arbitrarily set between several% and 50% with respect to the amount of alignment illumination light and exposure illumination light. The reflectance can be set lower than that in the case where the top layer DR3 (Td3 = 0 nm) composed of chromium oxide is not provided and only the base layer DR2 composed of pure chromium is provided.
如上述圖7所說明，於總之欲極力將外周表面DRs相對於曝光用照明光(IE0)或對準用照明光(ILa)之反射率抑制為較低之情形時，例如，藉由將由氧化鉻構成之頂層DR3之厚度Td3設為30nm，可於波長350nm~500nm之全域獲得約15%以下之反射率。 As described in FIG. 7 above, when the reflectance of the peripheral surface DRs with respect to the exposure illumination light (IE0) or the alignment illumination light (ILa) is desirably reduced to a low level, for example, by using chromium oxide The thickness Td3 of the formed top DR3 is set to 30 nm, and a reflectance of about 15% or less can be obtained in the entire range of wavelengths from 350 nm to 500 nm.
圖9之模擬係於旋轉捲筒DR之基材DR1上形成鉻層，於其上以經控制之厚度形成氧化鉻層而調整反射率之例，但並不限定於該組合。 The simulation in FIG. 9 is an example in which a chromium layer is formed on the base material DR1 of the rotary reel DR, and a chromium oxide layer is formed thereon with a controlled thickness to adjust the reflectance, but it is not limited to this combination.
例如，基底層DR2之材質除鉻(Cr)以外，亦可為鋁(Al)或銅(Cu)、銀(Ag)、金(Au)等。 For example, in addition to chromium (Cr), the material of the base layer DR2 may be aluminum (Al) or copper (Cu), silver (Ag), gold (Au), or the like.
作為基底層DR2上之頂層DR3之材質，可同樣地利用上述氧化鉻、如可控制相對反射率之高折射率之介電體、氧化鈦(TiO)、鋯英石、氧化鉿、類鑽碳(DLC)等氧化物或氮化物等金屬系化合物。 As the material of the top layer DR3 on the base layer DR2, the above-mentioned chromium oxide, such as a dielectric material with a high refractive index that can control the relative reflectance, titanium oxide (TiO), zircon, hafnium oxide, and diamond-like carbon can be similarly used. (DLC) Metal compounds such as oxides and nitrides.
又，通常，曝光用照明光(IE0)係波長436nm(g射線)以下之紫外線，對準用之照明光(ILa)使用如不會使光感應層(Pb3)感光之可見光區域~紅外線區域之波段之光。In general, the exposure illumination light (IE0) is ultraviolet light having a wavelength of 436 nm (g-ray) or less, and the alignment illumination light (ILa) uses a wavelength range from a visible light region to an infrared region that does not light-sensitive the light sensing layer (Pb3). Light.
因此，藉由以如銅(Cu)般相對於紫外線區域之光反射率較低、相對於紅外線波長區域之光反射率較高之金屬材料形成基底層DR2，亦可使相對於對準用照明光(ILa)與曝光用照明光(IE0)之各者之反射率存在差。 Therefore, by forming a base layer DR2 with a metal material, such as copper (Cu), which has a low light reflectance in the ultraviolet region and a high light reflectance in the infrared wavelength region, it is also possible to make the base layer DR2 suitable for the illumination light for alignment. There is a difference in reflectance between each of (ILa) and the exposure illumination light (IE0).
作為基底層DR2，藉由鍍敷使銅(Cu)較厚地堆積後，以0.5μm厚度與2μm厚度形成類鑽碳(DLC)作為頂層DR3，測定相對於波長355nm之紫外線(曝光用光)之反射率Re與相對於波長450nm~650nm之可見光區域之光(對準光)之反射率Rv。其結果如表1所述。 As the base layer DR2, after copper (Cu) was deposited thickly by plating, a diamond-like carbon (DLC) was formed with a thickness of 0.5 μm and a thickness of 2 μm as a top layer DR3, and the UV light (exposure light) was measured at a wavelength of 355 nm. The reflectance Re and the reflectance Rv of the light (alignment light) with respect to the visible light region with a wavelength of 450 nm to 650 nm. The results are shown in Table 1.
如此，藉由至少抑制旋轉捲筒DR之外周表面DRs相對於曝光用照明光(IE0)之反射率，可消除曝光時映入不必要之圖案像(模糊像)之問題。 In this way, by suppressing at least the reflectance of the outer peripheral surface DRs of the rotating reel DR with respect to the exposure illumination light (IE0), it is possible to eliminate the problem that an unnecessary pattern image (blurred image) is reflected during exposure.
上述第1實施形態之曝光裝置係所謂之多鏡頭方式，因此形成於複數個投影光學系統PL1~PL6之各投影區域PA1~PA6的遮罩圖案像結果必需於Y方向(或X方向)良好地接合，並且與基板P上之基底圖案良好地進行位置對準(重疊)。 The exposure apparatus of the first embodiment described above is a so-called multi-lens method. Therefore, the mask pattern images formed in the projection areas PA1 to PA6 of the plurality of projection optical systems PL1 to PL6 must be in the Y direction (or X direction). Bonded and well aligned (overlaid) with the base pattern on the substrate P.
因此，必需進行用以將複數個投影光學系統PL1~PL6之接合精度抑制於容許範圍內之校準。又，對準系統AM1~AM5之觀察(拍攝)區域Vw相對於各投影光學系統PL1~PL6之投影區域PA1~PA6之相對位置關係必需藉由基線管理而精密地謀求。為了進行該基線管理，亦必需進行校準。 Therefore, it is necessary to perform calibration to suppress the joining accuracy of the plurality of projection optical systems PL1 to PL6 within an allowable range. In addition, the relative positional relationship between the observation (shooting) areas Vw of the alignment systems AM1 to AM5 with respect to the projection areas PA1 to PA6 of each of the projection optical systems PL1 to PL6 must be accurately calculated by baseline management. To perform this baseline management, calibration is also required.
於用以確認複數個投影光學系統PL1~PL6之接合精度之校準、 用以管理對準系統AM1~AM5之基線之校準中，必需於支承基板P之旋轉捲筒DR之外周面之至少一部分設置基準標記或基準圖案。 In the calibration for confirming the joining accuracy of the plurality of projection optical systems PL1 to PL6 and the calibration for managing the baselines of the alignment systems AM1 to AM5, it is necessary to set at least a part of the outer peripheral surface of the rotating roll DR supporting the substrate P Datum mark or datum pattern.
將平面之玻璃板載置於平坦之基板座，使該基板座二維地移動，而進行投影曝光之先前之曝光裝置中，於基板座之外周部未由玻璃板覆蓋之部分，設置校準用之基準標記或基準圖案，於校準時，使該基準標記或基準圖案移動至投影光學系統或對準系統之物鏡下。 A flat glass plate is placed on a flat substrate holder, and the substrate holder is moved two-dimensionally. In the previous exposure device for projection exposure, the outer periphery of the substrate holder is not covered by the glass plate, and is used for calibration. When aligning the reference mark or reference pattern, move the reference mark or reference pattern under the objective lens of the projection optical system or alignment system.
然而，如上述之第1實施形態之曝光裝置般，於大部分運行時間中，於在旋轉捲筒DR之外周面之一部分(投影區域PA1~PA6之位置)捲曲有基板P之狀態下，必需將此種基準標記或基準圖案設置於旋轉捲筒DR之外周面上與基板P接觸之部分。 However, like the exposure apparatus of the first embodiment described above, in most of the running time, the substrate P is required to be curled on a part of the outer peripheral surface of the rotary reel DR (the position of the projection area PA1 to PA6). Such a reference mark or reference pattern is provided on a portion of the outer peripheral surface of the rotary reel DR that is in contact with the substrate P.
因此，本實施形態中，如圖10所示，對使用於外周面設有基準標記或基準圖案之旋轉捲筒DR之情形進行說明。 Therefore, in this embodiment, as shown in FIG. 10, the case where the rotating reel DR provided with the reference mark or reference pattern on the outer peripheral surface is demonstrated.
圖10係和與旋轉中心線AX2為同軸之軸部Sf2一體地進行車床加工之旋轉捲筒DR之立體圖，與上述圖2、圖6中所示之構成同樣地設有編碼器計測用之標尺部GPa、GPb及限制帶CLa、CLb。 Fig. 10 is a perspective view of a rotating drum DR which is lathe machined integrally with the shaft portion Sf2, which is coaxial with the rotation center line AX2, and a scale for encoder measurement is provided in the same manner as the structure shown in Figs. 2 and 6 above. GPa, GPb and restricted bands CLa, CLb.
進而，本實施形態中，於旋轉捲筒DR之外周面之由限制帶CLa、CLb夾持之整周，設有將相對於Y軸以+45度傾斜之複數個線圖案RL1與相對於Y軸以-45度傾斜之複數個線圖案RL2以固定之間距(週期)Pf1、Pf2反覆刻設所得之網狀基準圖案(亦可用作基準標記)RMP。 Furthermore, in the present embodiment, a plurality of line patterns RL1 inclined with respect to the Y-axis and Y with respect to the Y-axis are provided on the entire periphery of the outer peripheral surface of the rotating drum DR held by the restriction bands CLa and CLb. A plurality of line patterns RL2 whose axis is inclined at -45 degrees are repeatedly engraved with a fixed interval (period) Pf1, Pf2 to obtain a net reference pattern (also used as a reference mark) RMP.
藉由旋轉捲筒DR之旋轉，該外周面、即由限制帶CLa、CLb夾持之整周必需與基板P接觸，因此為了不產生由基板P與旋轉捲筒DR之外周面進行接觸之部位所引起之摩擦力或基板P之張力等之變化，基準圖案RMP設為整個面均勻之傾斜圖案(斜格子狀圖案)。 By the rotation of the rotary reel DR, the outer peripheral surface, that is, the entire circumference held by the restriction bands CLa, CLb, must be in contact with the substrate P. Therefore, in order not to cause a portion where the substrate P contacts the outer peripheral surface of the rotary reel DR The change of the frictional force or the tension of the substrate P caused by the reference pattern RMP is an inclined pattern (oblique grid pattern) uniform over the entire surface.
藉由使線圖案RL1、RL2相對於基板P之搬送方向(X方向)與基板P之寬度 方向(Y方向)之各者傾斜，緩和摩擦力或張力等之方向性。 By inclining the line patterns RL1 and RL2 with respect to each of the conveyance direction (X direction) of the substrate P and the width direction (Y direction) of the substrate P, the directivity of friction or tension is relaxed.
然而，線圖案RL1、RL2並非必需傾斜45度，亦可為使線圖案RL1與Y軸平行、使線圖案RL2與X軸平行而成之縱橫之網狀圖案。 However, the line patterns RL1 and RL2 do not necessarily have to be inclined by 45 degrees, and may be a horizontal and vertical net-like pattern formed by making the line pattern RL1 parallel to the Y axis and the line pattern RL2 parallel to the X axis.
進而，並非必需使線圖案RL1、RL2以90度交叉，亦可以如使由鄰接之2個線圖案RL1與鄰接之2個線圖案RL2包圍之矩形區域成為正方形(或長方形)以外之菱形之角度使線圖案RL1、RL2交叉。 Furthermore, it is not necessary to cross the line patterns RL1 and RL2 at 90 degrees. For example, a rectangular region surrounded by two adjacent line patterns RL1 and two adjacent line patterns RL2 may be an angle of a rhombus other than a square (or rectangle). The line patterns RL1 and RL2 are crossed.
又，圖10中所示之線圖案RL1、RL2之間距Pf1、Pf2係考慮對準系統之基線(投影光學系統PL之投影區域PA與拍攝區域Vw之相對位置關係)之預想之變動量、或多鏡頭方式之複數個投影光學系統PL1~PL6間之予想之變動量，只要為該予想之變動量之最低2倍以上即可。 The distance Pf1, Pf2 between the line patterns RL1, RL2 shown in FIG. 10 is the expected variation of the baseline of the alignment system (the relative positional relationship between the projection area PA of the projection optical system PL and the shooting area Vw), or The expected change amount of the plurality of projection optical systems PL1 to PL6 in the multi-lens method may be at least two times the minimum expected change amount.
例如，於予想之變動量之最大值為10μm之情形時，間距Pf1、Pf2根據線圖案RL1、RL2之線寬LW(5~20μm)而有所不同，只要為30~50μm左右，則可進行準確之校準。 For example, when the maximum value of the expected amount of variation is 10 μm, the pitches Pf1 and Pf2 differ according to the line width LW (5 to 20 μm) of the line patterns RL1 and RL2, as long as it is about 30 to 50 μm. Accurate calibration.
各線圖案RL1、RL2之線寬LW由可根據刻設各線圖案RL1、RL2之描繪裝置之精度(解析度)或蝕刻條件等而變細之極限所決定，較佳為於可藉由對準系統AM1~AM5穩定地進行圖像解析之範圍儘可能地變細。 The line width LW of each line pattern RL1, RL2 is determined by a limit that can be reduced according to the accuracy (resolution) or etching conditions of the drawing device in which each line pattern RL1, RL2 is engraved. The range of image analysis that AM1 ~ AM5 performs stably is as narrow as possible.
再者，於在各對準系統AM1~AM5之拍攝(觀察)區域Vw檢測基準圖案RMP，進行基線計測等之情形時，將線圖案RL1、RL2之間距Pf1、Pf2設為50μm左右。於是，線圖案RL1、RL2之交點部分於Y方向、X方向以70μm左右之間距呈現，只要拍攝(觀察)區域Vw為200μm見方之範圍，則可良好地捕捉既定之1個交點部分，進行位置偏移之圖像解析。 When the reference pattern RMP is detected in the imaging (viewing) area Vw of each of the alignment systems AM1 to AM5, and baseline measurement is performed, the distances Pf1 and Pf2 between the line patterns RL1 and RL2 are set to about 50 μm. Therefore, the intersections of the line patterns RL1 and RL2 are presented at a distance of about 70 μm in the Y direction and the X direction. As long as the shooting (observation) area Vw is in the range of 200 μm square, a predetermined intersection point can be captured and positioned. Offset image analysis.
圖11係沿圖10中之圓內所示之X軸將線圖案RL1、RL2之基準圖案RMP之一部分破斷之剖面圖。 FIG. 11 is a sectional view in which a part of the reference pattern RMP of the line patterns RL1 and RL2 is partially broken along the X axis shown in the circle in FIG. 10.
本實施形態中，與上述第1實施形態之圖8同樣地於鐵或鋁之圓筒狀基材DR1 之表面，藉由鍍敷較厚地堆積鉻或銅之基底層DR2。其後，對基底層DR2之表面進行光學研磨而提高平坦性後，於基底層DR2之整周塗佈光阻劑，藉由描繪裝置，於基底層DR2曝光線圖案RL1、RL2之基準圖案RMP。 In this embodiment, the base layer DR2 of chromium or copper is deposited thickly on the surface of the cylindrical base material DR1 of iron or aluminum in the same manner as in FIG. 8 of the first embodiment described above. After that, the surface of the base layer DR2 is optically polished to improve the flatness, and then a photoresist is coated on the entire periphery of the base layer DR2. The reference pattern RMP of the line patterns RL1 and RL2 is exposed on the base layer DR2 by a drawing device. .
此時，藉由亦一併描繪標尺部GPa、GPb之格子線，可使基準圖案RMP與標尺部GPa、GPb之相對位置關係(尤其周方向之位置關係)固定。 At this time, by drawing the grid lines of the scale portions GPa and GPb together, the relative positional relationship (especially the positional relationship in the circumferential direction) between the reference pattern RMP and the scale portions GPa and GPb can be fixed.
其後，藉由光阻劑之顯影，去除對應於線圖案RL1、RL2之部分光阻劑，將露出之基底層DR2(鉻或銅)蝕刻至既定之深度後，於其表面以既定之厚度堆積頂層DR3(氧化鉻或DLC)。 Thereafter, by developing the photoresist, a part of the photoresist corresponding to the line patterns RL1 and RL2 is removed, and the exposed base layer DR2 (chrome or copper) is etched to a predetermined depth, and then the surface is formed with a predetermined thickness. Stack top DR3 (chromium oxide or DLC).
若為氧化鉻之情形，則頂層DR3之厚度基於上述圖9之特性而設定。最終形成之頂層DR3之線圖案RL1、RL2(凹部)之階差量△DP藉由計測而與設計值進行比較，確認為既定之容許範圍內。 In the case of chromium oxide, the thickness of the top layer DR3 is set based on the characteristics of FIG. 9 described above. The step amount ΔDP of the line pattern RL1, RL2 (concave portion) of the top layer DR3 that is finally formed is compared with the design value by measurement, and is confirmed to be within a predetermined allowable range.
此種線圖案RL1、RL2之基準圖案RMP亦可將相對於其表面之曝光用照明光之反射率與上述第1實施形態同樣地抑制為20%以下。根據該情況，即便於基準圖案RMP反射曝光用照明光，亦並非作為不必要之圖案曝光於光感應層Pb3之程度之能量，因此實質上毫無問題。 In such a reference pattern RMP of the line patterns RL1 and RL2, the reflectance of the exposure illumination light with respect to the surface thereof can be suppressed to 20% or less as in the first embodiment. According to this case, even if the exposure illumination light is reflected in the reference pattern RMP, it is not a level of energy exposed to the light-sensing layer Pb3 as an unnecessary pattern, so there is virtually no problem.
再者，線圖案RL1、RL2如圖11般藉由蝕刻以凹部之形式形成，亦可使用負型光阻劑，使線圖案RL1、RL2以凸部之形式形成。 Furthermore, the line patterns RL1 and RL2 are formed in the form of recessed portions by etching as shown in FIG. 11, and a negative photoresist can also be used to form the line patterns RL1 and RL2 in the form of raised portions.
另外，線圖案RL1、RL2之基準圖案RMP於旋轉捲筒DR之外周表面DRs以凹凸之形式形成，因此若使該凹凸之階差量為既定之條件，則基準圖案RMP整體可成為相對於曝光用照明光與對準用照明光兩者抑制反射強度之相位圖案。 In addition, the reference patterns RMP of the line patterns RL1 and RL2 are formed as irregularities on the outer peripheral surface DRs of the rotary reel DR. Therefore, if the step amount of the irregularities is a predetermined condition, the entire reference pattern RMP can be relative to the exposure A phase pattern that suppresses the reflection intensity with both the illumination light and the alignment illumination light.
因此，可將圖11所示之階差量△DP以如下之條件進行設定。 Therefore, the step amount ΔDP shown in FIG. 11 can be set under the following conditions.
此處，若將曝光用照明光IE0之中心波長設為λ1，將對準用照明光ILa之中心波長設為λ2，將m設為包含零之任意整數(m=0、1、2...)，則關 於曝光用之照明光IE0之中心波長λ1，可以λ1‧(m+1/8)/2≦△DP≦λ1‧(m+7/8)/2...(3)之範圍設定階差量△DP。進而，可以λ1‧(m+1/4)/2≦△DP≦λ1‧(m+3/4)/2...(4)之範圍設定階差量△DP。 Here, if the center wavelength of the exposure illumination light IE0 is set to λ1, the center wavelength of the alignment illumination light ILa is set to λ2, and m is set to an arbitrary integer including zero (m = 0, 1, 2, ... ), The central wavelength λ1 of the exposure illumination light IE0 can be in the range of λ1‧ (m + 1/8) / 2 ≦ △ DP ≦ λ1‧ (m + 7/8) / 2 ... (3) Set the step amount ΔDP. Furthermore, the step amount ΔDP can be set in a range of λ1‧ (m + 1/4) / 2 ≦ ΔDP ≦ λ1‧ (m + 3/4) / 2 ... (4).
另一方面，關於對準用照明光ILa之中心波長λ2，亦可將上述式(3)、(4)中之波長λ1替換為λ2，而決定階差量△DP之範圍。 On the other hand, regarding the center wavelength λ2 of the alignment illumination light ILa, the wavelength λ1 in the above formulas (3) and (4) can be replaced with λ2 to determine the range of the step amount ΔDP.
此時，將關於曝光用照明光之波長λ1求出之階差量△DP之範圍與關於對準用照明光之波長A2求出之階差量△DP之範圍進行比較，若將兩者之範圍所重疊處或接近處設定為最佳之階差量△DP，則相對於曝光用照明光與對準用照明光之兩者，可降低自基準圖案RMP產生之反射光之強度。 At this time, the range of the step amount ΔDP obtained with respect to the wavelength λ1 of the exposure illumination light and the range of the step amount ΔDP obtained with respect to the wavelength A2 of the alignment illumination light are compared. When the overlapped or near position is set to the optimal step difference amount ΔDP, the intensity of the reflected light generated from the reference pattern RMP can be reduced compared to both the exposure illumination light and the alignment illumination light.
即，只要相對於曝光用照明光之中心波長λ1與對準用照明光之中心波長λ2之兩者，設定如滿足或近似上述式(3)、式(4)之階差量△DP即可。 That is, as long as the central wavelength λ1 of the exposure illuminating light and the central wavelength λ2 of the aligning illuminating light are set, the step amount ΔDP that satisfies or approximates the above formulas (3) and (4) may be set.
以上，第1實施形態或第2實施形態中，於成為旋轉捲筒DR之圓筒狀基材DR1之外周面積層相對較厚之基底層DR2與頂層DR3而調整反射率，但亦可為其以上層數之積層構造。 As described above, in the first embodiment or the second embodiment, the reflectance is adjusted based on the relatively thick base layer DR2 and the top layer DR3 on the outer peripheral area layer of the cylindrical base material DR1 that becomes the rotating drum DR, but it may be adjusted Multilayer structure of the above layers.
例如，為了旋轉捲筒DR之輕量化，亦可自Al(鋁)塊切削基材DR1，於該基材DR1之外周面較厚地鍍敷用以進行平面度(真圓度或表面粗糙度)加工之相對較硬之鉻(Cr)後，進而於其上實施作為上述圖8或圖11所示之基底層DR2之銅(Cu)之鍍敷，於其上以既定之厚度積層作為頂層DR3之DLC。 For example, in order to reduce the weight of the rotating reel DR, the base material DR1 can be cut from an Al (aluminum) block, and the outer peripheral surface of the base material DR1 can be plated thickly for flatness (roundness or surface roughness). After processing relatively hard chromium (Cr), copper (Cu) plating as the above-mentioned base layer DR2 shown in FIG. 8 or FIG. 11 is further performed thereon, and a predetermined thickness is laminated thereon as the top layer DR3. DLC.
於此情形時，基準圖案RMP(線圖案RL1、RL2)或標尺部GPa、GPb之格子線係刻設於較硬之鉻層或其上之銅之基底層DR2。 In this case, the grid pattern of the reference pattern RMP (line patterns RL1, RL2) or the scale portion GPa, GPb is engraved on a harder chromium layer or a copper base layer DR2 thereon.
上述實施形態之曝光裝置係使用圓筒遮罩DM將遮罩圖案掃描曝光於基板P 者，即便為不使用遮罩之曝光裝置、即如圖案產生器之曝光裝置，亦可使用旋轉捲筒DR支承基板P並且進行圖案曝光。參照圖12、圖13說明此種曝光裝置之例。 The exposure device of the above embodiment uses a cylindrical mask DM to scan and expose the mask pattern on the substrate P. Even if it is an exposure device that does not use a mask, that is, an exposure device such as a pattern generator, a rotating drum DR can also be used. The substrate P is supported and subjected to pattern exposure. An example of such an exposure apparatus will be described with reference to FIGS. 12 and 13.
圖12係於XZ面內觀察本實施形態之曝光裝置(圖案描繪裝置)之主要部分之前視圖，圖13係於XY面內觀察圖12之構成之俯視圖。 FIG. 12 is a front view of the main part of the exposure device (pattern drawing device) of this embodiment viewed in the XZ plane, and FIG. 13 is a plan view of the structure of FIG. 12 viewed in the XY plane.
本實施形態中，如圖13所示，藉由於Y方向(旋轉中心線AX2延伸之方向)高速地掃描之雷射光斑(例如直徑4μm)之直線之掃描線LL1、LL2、LL3、LL4，對密接、支承於旋轉捲筒DR之外周面之基板P上之曝光區域A7進行圖案描繪。掃描線LL1~LL4之各者於Y方向之掃描長相對較短，因此相對於中心面p3對稱地鋸齒狀配置。 In this embodiment, as shown in FIG. 13, the scanning lines LL1, LL2, LL3, and LL4 of the straight line of the laser spot (for example, 4 μm in diameter) scanned at high speed due to the Y direction (direction in which the rotation center line AX2 extends) are aligned. The exposed area A7 on the substrate P which is closely contacted and supported on the outer peripheral surface of the rotary drum DR is patterned. The scanning length in the Y direction of each of the scanning lines LL1 to LL4 is relatively short, and therefore is symmetrically arranged with respect to the center plane p3.
各掃描線LL1~LL4中，奇數號之掃描線LL1、LL3相對於中心面p3配置於-X側，偶數號之掃描線LL2、LL4相對於中心面p3配置於+X側。 Among the scanning lines LL1 to LL4, the odd-numbered scanning lines LL1 and LL3 are arranged on the -X side with respect to the center plane p3, and the even-numbered scanning lines LL2 and LL4 are arranged on the + X side with respect to the center plane p3.
其原因為，如圖12所示，避免沿各掃描線LL1~LL4掃描光斑之奇數號之描繪模組UW1、UW3與偶數號之描繪模組UW2、UW4之空間上之干涉，而相對於中心面p3對稱地配置。 The reason is that, as shown in FIG. 12, the spatial interference between the odd-numbered drawing modules UW1 and UW3 and the even-numbered drawing modules UW2 and UW4 along the scanning lines LL1 to LL4 are avoided, and relative to the center The plane p3 is arranged symmetrically.
本實施形態中，於旋轉捲筒DR之軸部Sf2個別地安裝編碼器計測用標尺圓盤SD。刻設於標尺圓LSD之外周面之標尺部GPa(及GPb)藉由配置於設置方位線Le1上之編碼器頭EN1與配置於設置方位線Le2上之編碼器頭EN2進行計測。 In this embodiment, an encoder measurement scale disc SD is individually attached to the shaft portion Sf2 of the rotary reel DR. The scale portion GPa (and GPb) engraved on the outer surface of the scale circle LSD is measured by an encoder head EN1 arranged on the setting azimuth line Le1 and an encoder head EN2 arranged on the setting azimuth line Le2.
又，於配置有如上述圖5、圖6之對準系統AM1~AM5之設置方位線La1之位置，亦配置有讀取標尺部GPa(及GPb)之編碼器頭EN3。 In addition, at the position where the azimuth line La1 of the alignment systems AM1 to AM5 as shown in FIG. 5 and FIG. 6 is disposed, the encoder head EN3 that reads the scale portion GPa (and GPb) is also disposed.
如圖12所示，4個描繪模組UW1~UW4均為相同之構成，因此作為代表對描繪模組UW1說明詳細之構成。 As shown in FIG. 12, the four drawing modules UW1 to UW4 have the same configuration, and therefore the detailed configuration of the drawing module UW1 will be described as a representative.
描繪模組UW1具備：AOM(Acousto-Optic Modulator，聲光調變器)80，其 入射來自外部之紫外雷射光源(連續或脈衝)之光束LB，高速地切換光束LB向基板P之投射/非投射；旋轉多面鏡82，其用以沿基板P上之掃描線LL1掃描來自AOM80之光束LB；彎曲鏡面84；f-θ透鏡系統86；及光電元件88等。 The drawing module UW1 includes: an AOM (Acousto-Optic Modulator) 80, which enters a light beam LB from an external ultraviolet laser light source (continuous or pulsed), and switches the projection of the light beam LB to the substrate P at a high speed. Non-projection; rotating polygon mirror 82 for scanning the light beam LB from AOM 80 along the scanning line LL1 on the substrate P; curved mirror surface 84; f-θ lens system 86;
經由f-θ透鏡系統86而投射至基板P之光束BS1係於Y方向之掃描中，基於應描繪之圖案之CAD資訊藉由On/Off之AOM80進行調變，將圖案描繪於基板P之光感應層上。藉由使沿掃描線LL1之光束BS1之Y方向掃描與由旋轉捲筒DR之旋轉引起之基板P於X方向之移動同步，而於曝光區域A7中之對應於掃描線LL1之部分曝光圖案。 The light beam BS1 projected onto the substrate P through the f-θ lens system 86 is scanned in the Y direction. Based on the CAD information of the pattern to be drawn, it is adjusted by the On / Off AOM80 to draw the pattern on the light of the substrate P. On the sensing layer. By synchronizing the scanning in the Y direction of the light beam BS1 along the scanning line LL1 with the movement of the substrate P in the X direction caused by the rotation of the rotating reel DR, a partial exposure pattern corresponding to the scanning line LL1 in the exposure area A7.
由於為此種描繪方式，故而如圖12般，於在XZ面內觀察時，到達基板P之光束BS1之軸線成為與設置方位線Le1一致之方向。該情況對於自偶數號之描繪模組UW2投射之光束BS2亦同樣，到達基板P之光束BS2之軸線成為與設置方位線Le2一致之方向。 Because of this drawing method, as shown in FIG. 12, when viewed in the XZ plane, the axis of the light beam BS1 reaching the substrate P becomes a direction consistent with the installation azimuth line Le1. This case is also the same for the light beam BS2 projected from the even-numbered drawing module UW2, and the axis of the light beam BS2 reaching the substrate P becomes a direction consistent with the installation azimuth line Le2.
如此，藉由4條掃描線LL1~LL4於曝光區域A7描繪圖案之情形時，各掃描線LL1~LL4間之接合部之精度較為重要。於圖13之情形時，曝光區域A7係首先開始與奇數號之掃描線LL1、LL3對應之區域之曝光，自基板P自該位置起沿周長方向行進距離△Xu之位置起，開始與偶數號之掃描線LL2、LL4對應之區域之曝光。 In this way, when a pattern is drawn on the exposure area A7 by the four scanning lines LL1 to LL4, the accuracy of the joint between the scanning lines LL1 to LL4 is more important. In the case of FIG. 13, the exposure area A7 starts to expose the areas corresponding to the odd-numbered scanning lines LL1 and LL3 first. From the position where the substrate P travels in the circumferential direction by a distance ΔXu from this position, it starts to be even. The areas corresponding to the scanning lines LL2 and LL4 are exposed.
因此，藉由準確地設定各掃描線LL1~LL4之光斑之描繪開始點與描繪結束點，可良好地接合形成於曝光區域A7內之整體之圖案。 Therefore, by accurately setting the drawing start point and the drawing end point of the spots of each of the scanning lines LL1 to LL4, the entire pattern formed in the exposure area A7 can be well joined.
於如上之圖案描繪裝置中，亦藉由使用上述第1實施形態之圖8中所示之構造之旋轉捲筒DR或第2實施形態之圖10、圖11中所示之構造之旋轉捲筒DR，降低成為雜訊之不必要之圖案之映入，而達成高精度之圖案化。 In the pattern drawing device as described above, the rotary reel DR having the structure shown in FIG. 8 of the first embodiment or the rotary reel having the structure shown in FIGS. 10 and 11 of the second embodiment is also used. DR reduces the reflection of unnecessary patterns that become noise, and achieves high-precision patterning.
以上說明了各實施形態，作為基板P之支承裝置，除圓筒狀之旋轉捲筒DR以外，亦可為具有平坦之支承面者、具有於基板P之搬送方向以較大 曲率彎曲成圓筒狀之支承面者。或者，即便為如於該等支承裝置之支承面形成空氣軸承之氣體層，藉由該氣體層使基板微量上浮而支承之支承裝置，亦可同樣地應用發明。 The embodiments have been described above. As a support device for the substrate P, in addition to the cylindrical rotating drum DR, it may be a flat support surface, and it may be bent into a cylinder with a large curvature in the conveying direction of the substrate P. Shaped bearing surface. Alternatively, the invention can be similarly applied to a support device in which a gas layer of an air bearing is formed on a support surface of such a support device, and the substrate is floated and supported by the gas layer in a small amount.
又，上述之各實施形態中，作為基底層DR2、頂層DR3之金屬系薄膜，列舉了Cu(銅)、Cr(鉻)、Cr2O3(三價之氧化鉻)，但並不限定於此，亦可為CrO(二價之氧化鉻)。例如，亦可將成膜於基材DR1(SUS、Al等)上之基底層DR2設為Cu，作為堆積於基底層DR2上之頂層DR3，藉由鍍敷、蒸鍍、濺鍍使CrO成膜。 In each of the embodiments described above, Cu (copper), Cr (chromium), and Cr 2 O 3 (trivalent chromium oxide) are listed as the metal-based thin film of the base layer DR2 and the top layer DR3, but the invention is not limited to This may also be CrO (divalent chromium oxide). For example, the base layer DR2 formed on the substrate DR1 (SUS, Al, etc.) may be Cu, and as the top layer DR3 deposited on the base layer DR2, CrO may be formed by plating, vapor deposition, or sputtering. membrane.
又，作為上述之各實施形態之頂層DR3而成膜之類鑽碳(DLC)由碳原子構成，係非晶質構造及/或包含結晶質之非晶形構造，係混合有石墨之sp2鍵與鑽石之sp3鍵作為碳原子間之鍵之構造。 In addition, the diamond-like carbon (DLC) formed as the top layer DR3 of each of the above-mentioned embodiments is composed of carbon atoms, is an amorphous structure and / or an amorphous structure including crystalline, and is a mixture of graphite sp2 bond and Diamond sp3 bond is used as a structure between carbon atoms.
DLC係作為硬質膜而成膜，根據含氫量之多少與包含之結晶質之電子軌道靠近鑽石抑或靠近石墨，而區別其性質。 DLC is formed as a hard film, and its properties are distinguished according to the amount of hydrogen content and the crystalline electron orbit near diamond or graphite.
另外，形成於上述圖10中所示之旋轉捲筒DR之外周表面DRs之基準圖案RMP之形態只要為如不會因透過基板P之曝光用光之照射而自該基準圖案RMP產生強雜散光(不必要之反射光)者，則可為任意形狀。 In addition, the form of the reference pattern RMP formed on the outer peripheral surface DRs of the rotating roll DR shown in FIG. 10 is not limited as long as strong stray light is not generated from the reference pattern RMP due to the exposure of the exposure light through the substrate P. (Unnecessary reflected light), it can be any shape.
圖14係將形成於旋轉捲筒DR之外周表面DRs之基準圖案RMP之變形例作為第4實施形態而例示之立體圖，對於與圖10中之旋轉捲筒DR之構件相同之構件標附相同之符號。 FIG. 14 is a perspective view illustrating a modified example of the reference pattern RMP formed on the outer peripheral surface DRs of the rotary reel DR as a fourth embodiment, and the same components as those of the rotary reel DR in FIG. 10 are marked with the same components. symbol.
圖14中，於旋轉捲筒DR之軸部Sf2所延伸之方向(Y軸方向)之兩端面，與上述圖12、圖13同樣地藉由複數個螺釘FB緊固有編碼器計測用之標尺圓盤SD。本實施形態中，形成於標尺圓盤SD之外周面之標尺部GPa、GPb之 直徑(或自中心線AX2之半徑)係以與旋轉捲筒DR之外周表面DRs之直徑(或自中心線AX2之半徑)相同之方式設定。 In FIG. 14, the scale circle for encoder measurement is fastened to the both ends of the direction (Y-axis direction) in which the shaft portion Sf2 of the rotary reel DR extends, as in the above FIG. 12 and FIG. 13, by a plurality of screws FB. Disk SD. In this embodiment, the diameters (or radii from the centerline AX2) of the scale portions GPa and GPb formed on the outer peripheral surface of the scale disc SD are equal to the diameters (or from the centerline AX2) of the outer peripheral surface DRs of the rotating drum DR. Radius) is set in the same way.
於旋轉捲筒DR之外周表面DRs，沿與旋轉中心線AX2平行之方向(Y軸方向)直線延伸之線圖案RLa與沿周方向直線延伸之(於與XZ面平行之面內環繞)2個線圖案RLb、RLc作為基準圖案RMP而形成。 On the outer peripheral surface DRs of the rotating drum DR, a line pattern RLa extending linearly in a direction parallel to the rotation center line AX2 (Y-axis direction) and a linear pattern extending in the circumferential direction (surrounding in a plane parallel to the XZ plane) The line patterns RLb and RLc are formed as a reference pattern RMP.
線圖案RLa於圖14之情形時於周方向以45°間隔配置。2個線圖案RLb、RLc於與旋轉中心線AX2平行之方向(Y軸方向)隔開固定之間隔而配置。線圖案RLa之周方向之角度間隔η並不限定於45°，可為任意度。 The line pattern RLa is arranged at intervals of 45 ° in the circumferential direction in the case of FIG. 14. The two line patterns RLb and RLc are arranged at fixed intervals in a direction (Y-axis direction) parallel to the rotation center line AX2. The angular interval η in the circumferential direction of the line pattern RLa is not limited to 45 °, and may be any degree.
該固定之間隔係與上述圖6所示之對準系統AM1~AM5之各拍攝區域Vw於Y軸方向之間隔對應。即，以線圖案RLa與2個線圖案RLb、RLc之交叉部ALA隨著旋轉捲筒DR之旋轉而依次呈現於對準系統AM1~AM5之各拍攝區域Vw內之方式配置各線圖案RLa、RLb、RLc，交叉部ALA之線圖案部作為基準圖案RMP進行檢測。 The fixed interval corresponds to the interval in the Y-axis direction of each shooting area Vw of the alignment systems AM1 to AM5 shown in FIG. 6 described above. That is, the line patterns RLa and RLb are arranged in such a way that the intersection ALA of the line pattern RLa and the two line patterns RLb and RLc are sequentially presented in the respective shooting areas Vw of the alignment systems AM1 to AM5 as the rotary drum DR rotates. , RLc, and the line pattern portion of the crossing portion ALA is detected as the reference pattern RMP.
如上述圖6所示，於基板P上形成標記Ks1~Ks5，因此2個線圖案RLb、RLc中之至少一者係以不與標記Ks1~Ks5之Y軸方向之位置重疊之方式偏移而配置。 As shown in FIG. 6 above, marks Ks1 to Ks5 are formed on the substrate P. Therefore, at least one of the two line patterns RLb and RLc is shifted so as not to overlap with the positions in the Y-axis direction of the marks Ks1 to Ks5. Configuration.
作為一例，若將2個線圖案RLb、RLc之各線寬LW設定為15μm，將Y軸方向之間隔距離設定為150μm，標記Ks1~Ks5之各者以位於該2個線圖案RLb、RLc之間之方式設定，則各對準系統AM1~AM5可於該拍攝區域Vw內與標記Ks1~Ks5一併監測線圖案RLb、RLc。 As an example, if the line width LW of the two line patterns RLb and RLc is set to 15 μm, and the interval distance in the Y-axis direction is set to 150 μm, each of the marks Ks1 to Ks5 is located between the two line patterns RLb and RLc. If the mode is set, each alignment system AM1 ~ AM5 can monitor the line patterns RLb, RLc together with the marks Ks1 ~ Ks5 in the shooting area Vw.
進而，若將相鄰於圖6中所示之基板P上之搬送方向而配置之2個曝光區域A7間之空白部(配置有標記Ks2~Ks4之透明區域)設為既定之尺寸以上，則亦可使由形成於旋轉捲筒DR之外周表面DRs之線圖案RLa、RLb、RLc構成之交叉部ALA確實地配置於該空白部下。 Further, if a blank portion (transparent area in which the marks Ks2 to Ks4 are arranged) between the two exposed areas A7 arranged adjacent to the conveying direction on the substrate P shown in FIG. 6 is set to a predetermined size or more, The intersecting portion ALA composed of the line patterns RLa, RLb, and RLc formed on the outer peripheral surface DRs of the rotary reel DR may be arranged surely under the blank portion.
例如，若將旋轉捲筒DR之外周表面DRs之直徑設為Rdd，沿外周表面DRs之線圖案RLa之周方向之間隔距離LK使用上述所說明之線圖案RLa之周方向之角度間隔η，則以LK=π．Rdd．(η/360)...(5)表示。 For example, if the diameter of the outer peripheral surface DRs of the rotating drum DR is set to Rdd, and the interval distance LK in the circumferential direction of the line pattern RLa along the outer peripheral surface DRs is the angular interval η in the circumferential direction of the line pattern RLa described above, Take LK = π. Rdd. (η / 360) ... (5).
若將2個曝光區域A7間之空白部之基板P之於長度方向(搬送方向)之尺寸設為LU，以滿足LU>LK之條件之方式設定，則可使至少1個線圖案RLa配置於基板P之空白部內。 If the size of the substrate P in the blank portion between the two exposed areas A7 in the length direction (conveying direction) is set to LU, and the condition of LU> LK is set, at least one line pattern RLa can be arranged at Inside the blank portion of the substrate P.
以上，本實施形態中，由於基板P之長度方向(搬送方向)與短邊方向(Y軸方向)之各方向直線延伸之線圖案RLa、RLb、RLc構成基準圖案RMP，因此具有可於沿拍攝元件之水平掃描線或垂直掃描線之方向直接計測對準系統AM1~AM5之各拍攝區域Vw內呈現之交叉部ALA之二維位置，縮短圖像處理之運算時間之優點。 As described above, in this embodiment, since the line patterns RLa, RLb, and RLc extending linearly in each of the length direction (conveying direction) and the short side direction (Y-axis direction) of the substrate P constitute the reference pattern RMP, The direction of the horizontal scanning line or vertical scanning line of the component directly measures the two-dimensional position of the cross section ALA present in each shooting area Vw of the alignment system AM1 ~ AM5, which shortens the calculation time of image processing.
另外，若於旋轉捲筒DR之外周表面DRs形成如圖14之線圖案RLa、RLb、RLc，則與形成於基板P上之曝光區域A7之配線圖案或像素圖案之排列方向對齊。 In addition, if the line patterns RLa, RLb, and RLc are formed on the outer peripheral surface DRs of the rotating reel DR, they are aligned with the arrangement direction of the wiring pattern or pixel pattern of the exposed area A7 formed on the substrate P.
根據該情況，例如即便藉由基底層DR2、頂層DR3(參照上述圖8)減小外周表面DRs相對於曝光用光之反射率，於線圖案RLa、RLb、RLc之階差邊緣部產生之少許散射光等亦會分佈於線圖案RLa、RLb、RLc之方向，與形成於基板P上之曝光區域A7之配線圖案或像素圖案之排列方向對齊，有可能成為問題。 According to this situation, for example, even if the reflectance of the outer peripheral surface DRs with respect to the exposure light is reduced by the base layer DR2 and the top layer DR3 (refer to the above-mentioned FIG. 8), a small amount is generated at the step edges of the line patterns RLa, RLb, and RLc. Scattered light and the like are also distributed in the directions of the line patterns RLa, RLb, and RLc, and are aligned with the arrangement direction of the wiring patterns or pixel patterns of the exposed area A7 formed on the substrate P, which may become a problem.
因此，本實施形態中，如圖15所示，為了降低可能於線圖案RLa、RLb、RLc之階差邊緣部產生之少許散射光等，將形成於旋轉捲筒DR之外周表面 DRs之線圖案RLa、RLb、RLc作為線寬LW之凹部，並於該凹部內填充吸收紫外線(曝光用光)之材料PI。 Therefore, in this embodiment, as shown in FIG. 15, in order to reduce a small amount of scattered light that may be generated at the step edges of the line patterns RLa, RLb, and RLc, a line pattern will be formed on the outer peripheral surface DRs of the rotating drum DR. RLa, RLb, and RLc serve as recesses of the line width LW, and the recesses are filled with a material PI that absorbs ultraviolet light (light for exposure).
材料PI係含有紫外線吸收劑之塗料(乾燥後硬化者)，吸收於階差邊緣產生之散射光或繞射光，降低到達基板P之表面側之散射光或繞射光之量。作為紫外線吸收劑之一例，市售有BASF-SE公司之商品名Uvinul(註冊商標)或TINUVIN(註冊商標)，具有雖吸收紫外波長區域之曝光用光但幾乎不吸收可見光波長區域之對準用照明光之特性。 The material PI is a coating containing an ultraviolet absorber (hardened after drying), and absorbs scattered light or diffracted light generated at the edge of the step to reduce the amount of scattered or diffracted light reaching the surface side of the substrate P. As an example of the ultraviolet absorber, commercially available under the trade name Uvinul (registered trademark) or TINUVIN (registered trademark) of BASF-SE, it has alignment illumination that absorbs exposure light in the ultraviolet wavelength region but hardly absorbs visible wavelength region. The characteristics of light.
如上所述，本實施形態中，以凹部形成構成基準圖案RMP之線圖案，於該凹部填充紫外線吸收物質，因此可進一步降低因曝光用光之照射而自旋轉捲筒DR之外周表面DRs反射之雜散光。 As described above, in this embodiment, a line pattern constituting the reference pattern RMP is formed by a recessed portion, and the recessed portion is filled with an ultraviolet absorbing substance, so that the reflection from the outer peripheral surface DRs of the rotating roll DR by the exposure light can be further reduced. Stray light.
再者，於外周表面DRs之凹部填充紫外線吸收物質之方法對於上述圖10、圖11所示之線圖案RL1、RL2亦可同樣地應用。又，含有此種紫外線吸收劑之塗料亦可用於維護附於與基板P接觸之外周表面DRs之損傷或凹陷等不整齊之部分。 The method of filling the concave portion of the outer peripheral surface DRs with an ultraviolet absorbing substance can also be applied to the line patterns RL1 and RL2 shown in FIG. 10 and FIG. 11 described above. In addition, the paint containing such an ultraviolet absorber can also be used to maintain irregularities such as damage or depressions on the peripheral surface DRs attached to the substrate P.
其次，基於圖16對於無遮罩方式之圖案曝光裝置應用上述圖2、圖7、圖10、圖14中所說明之基板支承裝置之情形之構成進行說明。 Next, the configuration of a case where the substrate supporting device described in FIGS. 2, 7, 10, and 14 is applied to the pattern exposure device of the maskless method will be described based on FIG. 16.
圖16中，基板支承裝置係與上述各實施形態同樣地由張力調整輥RT1、RT2、由軸部Sf2軸支並且捲曲基板P之旋轉捲筒DR、標尺圓盤SD及編碼器頭EN1、EN3等構成。對準系統AM1(及AM2~AM5)亦同樣地由物鏡系統GA1、分光鏡GB1、照明單元GC1及拍攝系統GD1構成。 In FIG. 16, the substrate supporting device is a rotary reel DR, a scale disc SD, and encoder heads EN1 and EN3, which are supported by the tension adjusting rollers RT1 and RT2 and supported by the shaft portion Sf2 and curled on the substrate P in the same manner as in the above embodiments. And other composition. The alignment system AM1 (and AM2 to AM5) is similarly composed of an objective lens system GA1, a beam splitter GB1, an illumination unit GC1, and an imaging system GD1.
曝光單元具備：光源100，其產生曝光用照明光(曝光用光)；照明系統101，其將多個可動微鏡二維地排列而成之DMD(Digital Micromirror Device，數位微鏡裝置，註冊商標)104以均勻之照度均勻地進行照明；透鏡系 統105，其聚光由反射鏡103、DMD104之各微鏡反射之曝光用光；MLA(Micro-Lens Array，微透鏡陣列)106，其係將多個微透鏡二維地排列而成；視野光闌107，其與繞捲於旋轉捲筒DR之基板P之面共軛；及投影光學系統PL，其係由用以將藉由MLA106之各微透鏡而形成於視野光闌107之孔徑內之光斑投影於基板P上的透鏡系統108、109構成。 The exposure unit includes: a light source 100 that generates illumination light for exposure (exposure light); and an illumination system 101 that is a digital micromirror device (DMD) formed by arranging a plurality of movable micromirrors two-dimensionally, and a registered trademark ) 104 illuminates uniformly with a uniform illuminance; the lens system 105 focuses light for exposure light reflected by the micromirrors of the mirror 103 and the DMD 104; MLA (Micro-Lens Array) 106 A plurality of microlenses are arranged two-dimensionally; a field diaphragm 107, which is conjugated to a surface of a substrate P wound around a rotating reel DR; and a projection optical system PL, which The lens system 108 and 109 which project a light spot formed in the aperture of the field diaphragm 107 on the substrate P by a micro lens are formed.
又，於本實施形態之投影光學系統PL內之瞳面，設有可於與圖16之紙面正交之方向(Y軸方向)進行插拔之分光鏡110。 A pupil surface in the projection optical system PL of this embodiment is provided with a beam splitter 110 that can be inserted and removed in a direction (Y-axis direction) orthogonal to the paper surface in FIG. 16.
若***該分光鏡110，則來自MLA106之曝光用光經由投影光學系統PL之透鏡系統108、分光鏡110、透鏡系統109而投射至基板P之表面或旋轉捲筒DR之外周表面DRs上時，可將於基板P之表面或外周表面DRs反射而返回之反射光之一部分導向至包含聚光透鏡或光電元件等之監控器系統112。 When the beam splitter 110 is inserted, the exposure light from the MLA 106 is projected onto the surface of the substrate P or the outer peripheral surface DRs of the rotating drum DR through the lens system 108, the beam splitter 110, and the lens system 109 of the projection optical system PL. A part of the reflected light reflected from the surface of the substrate P or the peripheral surface DRs and returned may be guided to the monitor system 112 including a condenser lens, a photoelectric element, and the like.
該監控器系統112作為如下光量監控器或對準監控器而構成，該光量監控器係用以計測來自基板P之表面或外周表面DRs之反射光(曝光用光)之光量，而判斷是否對基板P賦予適當之曝光量(照度)，該對準監控器係基於反射光(曝光用光)，而收集關於基板P上之標記Ks1~Ks5或外周表面DRs上之基準圖案RMP之光資訊(光學像、繞射光等)。 The monitor system 112 is constituted as a light quantity monitor or an alignment monitor, which is used to measure the light quantity of reflected light (exposure light) from the surface of the substrate P or the peripheral surface DRs to determine whether it is correct. The substrate P is given an appropriate exposure amount (illumination), and the alignment monitor collects light information on the marks Ks1 to Ks5 on the substrate P or the reference pattern RMP on the peripheral surface DRs based on the reflected light (exposure light) ( Optical image, diffracted light, etc.).
於如圖16之無遮罩型之圖案曝光裝置中，基於圖案描繪資料(CAD資料)、基於來自編碼器頭EN1(或EN3)之計測信號的基板P之搬送位置之資訊、或由對準系統AM1(AM2~AM5)計測之基板P之標記Ks1~Ks5之位置資訊，而高速地切換DMD104之各微鏡之角度。 In the unmasked pattern exposure apparatus shown in FIG. 16, information on the transfer position of the substrate P based on the pattern drawing data (CAD data), the measurement signal from the encoder head EN1 (or EN3), or alignment The position information of the markers Ks1 to Ks5 of the substrate P measured by the system AM1 (AM2 ~ AM5), and the angles of the micromirrors of the DMD104 are switched at high speed.
藉此，對由各微鏡反射之曝光用光入射至MLA106之對應之微透鏡之狀態與未入射之狀態進行切換，因此於基板P上曝光(描繪)按照描繪資料之圖案。 Thereby, the state of the corresponding micro-lens of the exposure light reflected by each micromirror incident on the MLA 106 is switched to the state of not being incident, so the substrate P is exposed (drawn) according to the pattern of the drawing data.
圖16所示之本實施形態之圖案曝光裝置亦可於如上述圖2、圖4所示之條件下，於與旋轉中心線AX2平行之方向(Y軸方向)設置複數個曝光單元，藉此應對Y軸方向之寬度較大之基板P之曝光處理。於此情形時，較佳為，圖16中之視野光闌107之孔徑形狀設為與圖4中之各曝光區域PA1~PA6之形狀同樣之梯形狀，由MLA106作成之多個光斑以固定間距排列於該梯形狀之孔徑內。 The pattern exposure apparatus of this embodiment shown in FIG. 16 can also be provided with a plurality of exposure units in a direction (Y-axis direction) parallel to the rotation center line AX2 under the conditions shown in FIG. 2 and FIG. 4 described above. It is necessary to deal with the exposure process of the substrate P with a larger width in the Y-axis direction. In this case, it is preferable that the aperture shape of the field diaphragm 107 in FIG. 16 is set to the same ladder shape as the shape of each of the exposure areas PA1 to PA6 in FIG. 4. Arranged in the aperture of the ladder shape.
又，亦可以使由形成於MLA107之射出側之多個光斑之聚光點規定之聚焦面與旋轉捲筒DR之外周表面DRS同樣地彎曲成圓筒狀之方式，例如圖16中之MLA106之情形時，於該各微透鏡中之排列於X方向之微透鏡間使焦距稍許不同。 In addition, the focusing surface defined by the condensing points of a plurality of light spots formed on the exit side of the MLA107 may be curved into a cylindrical shape in the same manner as the outer peripheral surface DRS of the rotating drum DR. For example, the MLA106 in FIG. 16 In this case, the focal length is slightly different between the microlenses arranged in the X direction among the microlenses.
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| TW108109820A TWI729366B (en) | 2012-08-28 | 2013-04-12 | Pattern forming device |
| TW107111761A TWI658535B (en) | 2012-08-28 | 2013-04-12 | Pattern forming device |
| TW106108716A TWI624001B (en) | 2012-08-28 | 2013-04-12 | Substrate support device |
| TW102112961A TWI581362B (en) | 2012-08-28 | 2013-04-12 | A substrate supporting device, and an exposure device |
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| JP (4) | JP6245174B2 (en) |
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| HK (2) | HK1246408A1 (en) |
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