TWI650852B - Method for manufacturing active matrix light-emitting-diode - Google Patents
Method for manufacturing active matrix light-emitting-diode Download PDFInfo
- Publication number
- TWI650852B TWI650852B TW107107773A TW107107773A TWI650852B TW I650852 B TWI650852 B TW I650852B TW 107107773 A TW107107773 A TW 107107773A TW 107107773 A TW107107773 A TW 107107773A TW I650852 B TWI650852 B TW I650852B
- Authority
- TW
- Taiwan
- Prior art keywords
- driving
- electrode
- epitaxial layer
- emitting diode
- light emitting
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000011159 matrix material Substances 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims description 18
- 239000008187 granular material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 108
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 210000004508 polar body Anatomy 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
一種主動式驅動發光二極體陣列的製造方法，包含下列步驟：提供一基板，並於基板的一上表面形成一磊晶層；於磊晶層上形成一驅動電路層，其中，驅動電路層中具有複數個驅動元件以及複數個第一電極片，複數個第一電極片分別電性連接於複數個驅動元件其中之一；提供一次載板，將次載板接合於驅動電路層上；移除基板，使磊晶層及驅動電路層停留在次載板；對磊晶層進行加工以形成複數個分別與各驅動元件對應之發光二極體晶粒，其中，每一發光二極體晶粒的一端透過第一電極片電性連接於驅動元件；於複數個發光二極體晶粒的上分別形成一第二電極片，使發光二極體晶粒透過第二電極片接地。A method for manufacturing an active driving LED array includes the steps of: providing a substrate and forming an epitaxial layer on an upper surface of the substrate; forming a driving circuit layer on the epitaxial layer, wherein the driving circuit layer The plurality of driving elements and the plurality of first electrode sheets are respectively electrically connected to one of the plurality of driving elements; the primary carrier is provided to bond the secondary carrier to the driving circuit layer; Except for the substrate, the epitaxial layer and the driving circuit layer are stopped on the sub-carrier; the epitaxial layer is processed to form a plurality of light-emitting diode crystals respectively corresponding to the driving elements, wherein each of the light-emitting diode crystals One end of the granule is electrically connected to the driving element through the first electrode sheet; a second electrode sheet is respectively formed on the plurality of illuminating diode dies, and the illuminating diode dies are grounded through the second electrode sheet.
Description
本發明有關於微發光二極體陣列，特別是有關於一種主動式驅動發光二極體陣列的製造方法。The present invention relates to a micro-light emitting diode array, and more particularly to a method of fabricating an active driving light-emitting diode array.
微發光二極體陣列依驅動方式可分為被動式驅動微發光二極體陣列（Passive Matrix LED）與主動式驅動微發光二極體陣列（Active Matrix LED）。其中，主動式驅動微發光二極體陣列是利用薄膜電晶體（Thin Film Transistor, TFT）製作開關的等效電路（主動式驅動元件310）結合於個別的微發光二極體，來控制微發光二極體的明暗表現。The micro-light-emitting diode array can be divided into a passive driving micro-light-emitting diode array (Passive Matrix LED) and an active driving micro-light emitting diode array (Active Matrix LED). The active driving micro-light-emitting diode array is an equivalent circuit (active driving element 310) for fabricating a switch using a thin film transistor (TFT), and is combined with an individual micro-light emitting diode to control the micro-lighting. The light and dark performance of the diode.
現有的主動式驅動微發光二極體陣列製作方式，是透過TFT製程製作主動式驅動元件的陣列之後，再將微發光二極體逐一結合於對應的主動式驅動元件。然而，隨著微發光二極體的應用方式增加（例如作為顯示面板），需要將微發光二極體排列為極小間距的陣列，而致使前述結合過程成為耗時且良率不易提昇的製程瓶頸。雖然現有許多巨量移轉技術（Mass Transfer）被提出，但是巨量移轉需要高精密度設備，且現有的轉移良率、轉移時間或加工成本仍待突破，因此以主動式驅動微發光二極體陣列製作的顯示面板仍以小尺寸面板為主。In the prior art, the active driving micro-light-emitting diode array is fabricated by fabricating an array of active driving elements through a TFT process, and then bonding the micro-light emitting diodes one by one to the corresponding active driving elements. However, as the application mode of the micro light-emitting diode is increased (for example, as a display panel), it is necessary to arrange the micro light-emitting diodes into an array of extremely small pitches, so that the foregoing bonding process becomes a process bottleneck that is time consuming and the yield is not easily improved. . Although many existing Mass Transfers have been proposed, the huge transfer requires high-precision equipment, and the existing transfer yield, transfer time or processing cost still needs to be broken, so the active drive micro-lighting II The display panels made by the polar body array are still mainly small-sized panels.
鑑於上述問題，本發明提出一種主動式驅動發光二極體陣列的製造方法，藉以避免微發光二極體移轉工序產生的問題。In view of the above problems, the present invention provides a method for fabricating an active driving light-emitting diode array to avoid problems caused by the micro-light-emitting diode transfer process.
本發明至少一實施例一種主動式驅動發光二極體陣列的製造方法，包含下列步驟：提供一基板，並於基板的一上表面形成一磊晶層；於磊晶層上形成一驅動電路層，其中，驅動電路層中具有複數個驅動元件以及複數個第一電極片，複數個第一電極片分別電性連接於複數個驅動元件其中之一；提供一次載板，將次載板接合於驅動電路層上；移除基板，使磊晶層及驅動電路層停留在次載板；對磊晶層進行加工以形成複數個分別與各驅動元件對應之發光二極體晶粒，其中，每一發光二極體晶粒的一端透過第一電極片電性連接於驅動元件；於複數個發光二極體晶粒的上分別形成一第二電極片，使發光二極體晶粒透過第二電極片接地。At least one embodiment of the present invention provides a method for fabricating an active driving LED array, comprising the steps of: providing a substrate and forming an epitaxial layer on an upper surface of the substrate; forming a driving circuit layer on the epitaxial layer The driving circuit layer has a plurality of driving elements and a plurality of first electrode sheets, and the plurality of first electrode sheets are electrically connected to one of the plurality of driving elements respectively; providing a carrier plate and bonding the secondary carrier board to Driving the circuit layer; removing the substrate, leaving the epitaxial layer and the driving circuit layer on the secondary carrier; processing the epitaxial layer to form a plurality of light emitting diode dies corresponding to the respective driving elements, wherein each One end of a light-emitting diode die is electrically connected to the driving element through the first electrode piece; a second electrode piece is respectively formed on the plurality of light-emitting diode crystal grains, so that the light-emitting diode die passes through the second The electrode pads are grounded.
本發明至少另一實施例提出一種主動式驅動發光二極體陣列的製造方法，包含下列步驟：提供一基板，並於基板的一上表面形成一磊晶層；At least another embodiment of the present invention provides a method for fabricating an active driving LED array, comprising the steps of: providing a substrate and forming an epitaxial layer on an upper surface of the substrate;
於磊晶層上形成一第一電極層；其中，第一電極層中具有複數個第一電極片；提供一次載板，將次載板接合於磊晶層上，並且第一電極層係位於次載板及磊晶層之間；移除基板，使磊晶層及第一電極層停留在次載板；對磊晶層進行加工，以形成複數個發光二極體晶粒，且每一發光二極體晶粒分別位於一個第一電極片上；於每一發光二極體晶粒上方形成一第二電極片，並使第二電極片接地；於相鄰之發光二極體晶粒之間設置一驅動元件，使每一驅動元件分別與一第一電極片電性連接。Forming a first electrode layer on the epitaxial layer; wherein the first electrode layer has a plurality of first electrode sheets; providing a primary carrier, bonding the secondary carrier to the epitaxial layer, and the first electrode layer is located Between the secondary carrier and the epitaxial layer; removing the substrate, leaving the epitaxial layer and the first electrode layer on the secondary carrier; processing the epitaxial layer to form a plurality of LEDs, and each The illuminating diode dies are respectively disposed on a first electrode sheet; a second electrode sheet is formed on each of the illuminating diode dies, and the second electrode sheet is grounded; adjacent to the illuminating diode dies A driving component is disposed between each driving component and is electrically connected to a first electrode chip.
本發明至少又一實施例提出一種主動式驅動發光二極體陣列的製造方法，包含下列步驟：提供一基板，並於基板的一上表面形成一磊晶層；對磊晶層進行加工，而於磊晶層上形成複數個發光二極體晶粒，並形成一驅動電路層；其中，複數個發光二極體晶粒的底部以磊晶層連接，驅動電路層中具有複數個驅動元件及複數個第一電極片；每一發光二極體晶粒的一端分別透過一個第一電極片電性連接於一個驅動元件；以及使磊晶層接地。At least another embodiment of the present invention provides a method for fabricating an active driving LED array, comprising the steps of: providing a substrate and forming an epitaxial layer on an upper surface of the substrate; processing the epitaxial layer; Forming a plurality of light emitting diode crystal grains on the epitaxial layer and forming a driving circuit layer; wherein a bottom of the plurality of light emitting diode crystal grains is connected by an epitaxial layer, and the driving circuit layer has a plurality of driving elements and a plurality of first electrode sheets; one end of each of the light emitting diode chips is electrically connected to a driving element through a first electrode sheet; and the epitaxial layer is grounded.
於本發明係直接於基板或次載板上逐一製作第一電極片、第二電極片、發光二極體晶粒以及驅動元件，而在基板或次載板直接形成具有驅動電路之發光二極體陣列，而涉及發光二極體晶粒移轉工序，因此不會有轉移良率、轉移時間的問題，而可有效降低加工成本並提升產率，而可有效地應用於高解析度大尺寸的LED顯示面板。In the invention, the first electrode sheet, the second electrode sheet, the light emitting diode die and the driving component are directly formed on the substrate or the secondary carrier, and the light emitting diode with the driving circuit is directly formed on the substrate or the secondary carrier. The body array relates to the light-emitting diode grain transfer process, so there is no problem of transfer yield and transfer time, and the processing cost and the productivity can be effectively reduced, and the utility model can be effectively applied to high-resolution large-size. LED display panel.
請參閱圖1至圖7所示，為本發明第一實施例所提出的一種主動式驅動發光二極體陣列的製作方法。所述發光二極體可為微發光二極體（Micro LED）或奈米發光二極體（Nano LED）。主動式驅動發光二極體陣列可用於作為照明裝置或是顯示面板。Please refer to FIG. 1 to FIG. 7 , which illustrate a method for fabricating an active driving LED array according to a first embodiment of the present invention. The light emitting diode may be a micro LED or a nano LED. The active drive LED array can be used as a lighting device or as a display panel.
如圖1所示，本發明第一實施例提出的製作方法，係先提供一基板100，並於基板100的一上表面形成一磊晶層200（Epitaxy Layer）。所述基板100可為藍寶石基板，但不以此為限。磊晶層200包含P型半導體層、N型半導體層以及位於前述二半導體層之間的發光層；發光層可依據材料不同，而有不同的發光波長，例如紅光發光層、綠光發光層及藍光發光層。磊晶層200製作方式包含液相沈積(LPE)、氣相磊晶(VPE)、分子束磊晶(MBE)及有機金屬氣相磊晶(MOCVD)等，但不以前述為限，任何發光二極體磊晶之製程都可應用於本發明中來設置磊晶層200。As shown in FIG. 1 , the first embodiment of the present invention provides a substrate 100 and an epitaxial layer 200 on an upper surface of the substrate 100 . The substrate 100 can be a sapphire substrate, but is not limited thereto. The epitaxial layer 200 includes a P-type semiconductor layer, an N-type semiconductor layer, and a light-emitting layer between the two semiconductor layers; the light-emitting layer may have different light-emitting wavelengths depending on materials, such as a red light-emitting layer and a green light-emitting layer. And a blue light emitting layer. The epitaxial layer 200 is formed by liquid phase deposition (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (MOCVD), but is not limited to the foregoing, and any luminescence The process of diode epitaxy can be applied to the present invention to provide the epitaxial layer 200.
如圖2及圖3所示，接著，磊晶層200上形成一驅動電路層300，驅動電路層300中具有複數個驅動元件310以及複數個第一電極片410。每一驅動元件310具有必要的線路（掃瞄線318、資料線316等）以及電晶體開關，並且複數個驅動元件310是以需要的陣列型態排列。驅動電路層300中的導電線路，可以透明導電材質，例如氧化銦錫，以增加驅動電路層300的透光度。As shown in FIG. 2 and FIG. 3, a driving circuit layer 300 is formed on the epitaxial layer 200. The driving circuit layer 300 has a plurality of driving elements 310 and a plurality of first electrode sheets 410. Each drive element 310 has the necessary circuitry (scan line 318, data line 316, etc.) and a transistor switch, and a plurality of drive elements 310 are arranged in the desired array pattern. The conductive lines in the driving circuit layer 300 may be transparent conductive materials such as indium tin oxide to increase the transmittance of the driving circuit layer 300.
圖3所示是圖2中A區域的放大圖，提供一種驅動元件310的剖面，用以作為驅動元件310的例示。所述驅動元件310具有一第一薄膜電晶體312、一第二薄膜電晶體314、一資料線316及一掃瞄線318。第一薄膜電晶體312與第二薄膜電晶體314互相電性連接以構成一等效電晶體開關310a，資料線316及掃瞄線318則用以提供開關訊號至所述等效電晶體開關310a，以切換驅動元件310的導通與否。每一第一電極片410電性連接於一個等效電晶體開關310a，並且第一電極片410可以配置於等效電晶體開關310a之下，使其位於驅動電路層300的最底層並連接磊晶層200的一端，使得等效電晶體開關310a的源極或汲極電性連接於磊晶層200的一端。3 is an enlarged view of the area A of FIG. 2, providing a cross section of the drive member 310 for use as an illustration of the drive member 310. The driving component 310 has a first thin film transistor 312, a second thin film transistor 314, a data line 316, and a scan line 318. The first thin film transistor 312 and the second thin film transistor 314 are electrically connected to each other to form an equivalent transistor switch 310a. The data line 316 and the scan line 318 are used to provide a switching signal to the equivalent transistor switch 310a. To switch the conduction of the driving element 310 or not. Each of the first electrode sheets 410 is electrically connected to an equivalent transistor switch 310a, and the first electrode sheet 410 can be disposed under the equivalent transistor switch 310a so as to be located at the bottom layer of the driving circuit layer 300 and connected to the Lei One end of the crystal layer 200 is such that the source or the drain of the equivalent transistor switch 310a is electrically connected to one end of the epitaxial layer 200.
如圖4所示，驅動元件310之等效電晶體開關310a主要係用於作為開關，而可被掃瞄線318輸出之訊號驅動導通電路即可，因此只要符合如圖4所示包含等效電晶體開關310a的等效電路，皆可作為本發明之驅動元件310。As shown in FIG. 4, the equivalent transistor switch 310a of the driving component 310 is mainly used as a switch, and the signal outputted by the scan line 318 can drive the conduction circuit, so as long as it conforms to the equivalent as shown in FIG. The equivalent circuit of the transistor switch 310a can be used as the driving element 310 of the present invention.
如圖5所示，提供一次載板500，以一接合層510將次載板500接合於所述驅動電路層300上，而覆蓋驅動電路層300。前述接合層510的材料可以是單一金屬材料或兩種金屬材料的結合，以金屬接合（擴散接合或融合接合），達成接合層510與次載板500之間的接合，例如金對金擴散接合或錫對金融合接合；接合層510的材料也可以是非金屬，以非金屬接合（擴散接合或黏合）達成接合層510與次載板500之間的接合，例如銦錫化氧對銦錫化氧的擴散結合或旋轉塗佈玻璃薄膜；接合層510也可以是膠合材料，或是以熱融黏合接合層510與次載板500使得接合層510與次載板500之間形成熱融黏合之接合層510。As shown in FIG. 5, a carrier 500 is provided, and the secondary carrier 500 is bonded to the driving circuit layer 300 by a bonding layer 510 to cover the driving circuit layer 300. The material of the foregoing bonding layer 510 may be a single metal material or a combination of two metal materials, and metal bonding (diffusion bonding or fusion bonding) to achieve bonding between the bonding layer 510 and the secondary carrier 500, such as gold-to-gold diffusion bonding. Or tin-to-finger bonding; the material of the bonding layer 510 may also be non-metal, and the bonding between the bonding layer 510 and the sub-board 500 is achieved by non-metal bonding (diffusion bonding or bonding), such as indium tin oxide to indium tin plating. The diffusion of oxygen combines or spin-coats the glass film; the bonding layer 510 may also be a bonding material, or the heat-bonding bonding layer 510 and the secondary carrier 500 form a thermal fusion bond between the bonding layer 510 and the secondary carrier 500. Bonding layer 510.
如圖6所示，移除基板100，使磊晶層200及驅動電路層300停留在次載板500，並翻轉次載板500，使磊晶層200及驅動電路層300位於次載板500的上方，以利後續加工。移除基板100的方式，可以採用濕蝕刻、乾蝕刻、 研磨等等製程，只要能將構成基板100的材料去除即可達成移除基板100的目的。As shown in FIG. 6 , the substrate 100 is removed, the epitaxial layer 200 and the driving circuit layer 300 are stopped on the secondary carrier 500 , and the secondary carrier 500 is turned over so that the epitaxial layer 200 and the driving circuit layer 300 are located on the secondary carrier 500 . Above, to facilitate subsequent processing. The manner of removing the substrate 100 may be performed by wet etching, dry etching, grinding, or the like, as long as the material constituting the substrate 100 can be removed to achieve the purpose of removing the substrate 100.
如圖7所示，對磊晶層200進行加工，例如蝕刻技術，以形成複數個分別與各驅動元件310對應之發光二極體晶粒210。其中，每一發光二極體晶粒210大致位於一個驅動元件310上方，並且接合於第一電極片410，使得發光二極體晶粒210的一端透過第一電極片410電性連接於驅動元件310。As shown in FIG. 7, the epitaxial layer 200 is processed, such as an etch technique, to form a plurality of light emitting diode dies 210 corresponding to respective drive elements 310. Each of the LEDs 210 is disposed above the driving element 310 and is coupled to the first electrode sheet 410 such that one end of the LED chip 210 is electrically connected to the driving element through the first electrode sheet 410. 310.
如圖7與圖8所示，最後在於發光二極體晶粒210的上方形成一第二電極片420，使得發光二極體晶粒210的另一端透過第二電極片420接地，從而形成具有驅動電路之發光二極體陣列。第二電極片420的製作方式可為於複數個發光二極體晶粒210上覆蓋一層透明導電層，之後透過蝕刻等程序移除不必要的部份，留下第二電極片420。此外，磊晶層200也可再形成一透明保護層600，以覆蓋發光二極體晶粒210以及第二電極片420等，以形成保護作用。As shown in FIG. 7 and FIG. 8 , a second electrode sheet 420 is formed over the LED die 210 so that the other end of the LED die 210 is grounded through the second electrode tab 420, thereby forming A light-emitting diode array of a driving circuit. The second electrode sheet 420 can be formed by covering a plurality of light-emitting diode dies 210 with a transparent conductive layer, and then removing unnecessary portions by etching or the like, leaving the second electrode sheet 420. In addition, the epitaxial layer 200 may further form a transparent protective layer 600 to cover the LED die 210 and the second electrode sheet 420 to form a protective effect.
前述如圖4之等效電路中，第一電極片410連接於源極與汲極其中之一，而第二電極片420則為接地，連接亦有可能相反，可為第一電極片410接地，而第二電極片420連接於源極與汲極，取決於磊晶層200中的兩半導體層的配置，只要發光二極體晶粒210的一端連接於等效電晶體開關310a，另一端接地即可；閘極連接於掃瞄線318；而源極與汲極中沒有與電極片連接者則連接於資料線316；如此就可以透過掃瞄線318及資料線316之提供之訊號，控制等效電路的導通，而驅動發光二極體晶粒210發光。In the foregoing equivalent circuit of FIG. 4, the first electrode piece 410 is connected to one of the source and the drain, and the second electrode piece 420 is grounded, and the connection may be reversed. The first electrode piece 410 may be grounded. The second electrode sheet 420 is connected to the source and the drain, depending on the arrangement of the two semiconductor layers in the epitaxial layer 200, as long as one end of the light emitting diode die 210 is connected to the equivalent transistor switch 310a, and the other end The grounding is sufficient; the gate is connected to the scanning line 318; and the source and the drain are not connected to the electrode sheet and connected to the data line 316; thus, the signal provided by the scanning line 318 and the data line 316 can be transmitted. The conduction of the equivalent circuit is controlled, and the light-emitting diode die 210 is driven to emit light.
如圖9所示，驅動發光二極體晶粒210發光後，發光二極體晶粒210可朝向遠離次載板500上表面的方向發光。As shown in FIG. 9, after the light-emitting diode die 210 is driven to emit light, the light-emitting diode die 210 can emit light in a direction away from the upper surface of the secondary carrier 500.
圖10至圖14是本發明第二實施例所提供的一種主動式驅動發光二極體陣列的製作方法，其流程如下。10 to FIG. 14 are diagrams showing a method for fabricating an active driving LED array according to a second embodiment of the present invention, the flow of which is as follows.
如圖10所示，首先，提供一基板100，並於基板100的一上表面形成一磊晶層200。基板100與磊晶層200之材料與組成，大致與第一實施例相同，以下不再贅述。As shown in FIG. 10, first, a substrate 100 is provided, and an epitaxial layer 200 is formed on an upper surface of the substrate 100. The materials and compositions of the substrate 100 and the epitaxial layer 200 are substantially the same as those of the first embodiment, and will not be described below.
如圖11所示，於磊晶層200上形成一第一電極層410a，第一電極層410a中具有複數個第一電極片410，且複數個第一電極片410配置成陣列。所述第一電極片410同樣是可以採用氧化銦錫等透明導電材料製作。As shown in FIG. 11, a first electrode layer 410a is formed on the epitaxial layer 200. The first electrode layer 410a has a plurality of first electrode sheets 410, and the plurality of first electrode sheets 410 are arranged in an array. The first electrode sheet 410 can also be made of a transparent conductive material such as indium tin oxide.
如圖12所示，提供一次載板500，並以一接合層510將次載板500接合於磊晶層200上，並且第一電極層410a係位於次載板500以及磊晶層200之間。As shown in FIG. 12, a carrier 500 is provided, and the secondary carrier 500 is bonded to the epitaxial layer 200 by a bonding layer 510, and the first electrode layer 410a is located between the secondary carrier 500 and the epitaxial layer 200. .
如圖13所示，移除基板100，使磊晶層200及第一電極層410a停留在次載板500，並翻轉次載板500，使磊晶層200及第一電極層410a位於次載板500的上方，以利後續加工。As shown in FIG. 13, the substrate 100 is removed, the epitaxial layer 200 and the first electrode layer 410a are stopped on the secondary carrier 500, and the secondary carrier 500 is turned over, so that the epitaxial layer 200 and the first electrode layer 410a are located in the second load. Above the board 500 for subsequent processing.
如圖14及圖15圖所示，對磊晶層200進行加工，例如蝕刻技術，以形成複數個發光二極體晶粒210，且每一發光二極體晶粒210分別位於一個第一電極片410上，而以其一端連接於第一電極片410，並以一預定陣列型態排列。As shown in FIG. 14 and FIG. 15, the epitaxial layer 200 is processed, for example, an etching technique to form a plurality of light emitting diode dies 210, and each of the light emitting diode dies 210 is located at a first electrode. The film 410 is connected to the first electrode sheet 410 at one end thereof and arranged in a predetermined array pattern.
如圖14及圖15圖所示，於每一發光二極體晶粒210上方形成一第二電極片420，並使第二電極片420接地；接著執行一電路製作程序，於相鄰之發光二極體晶粒210之間設置驅動元件310，使每一驅動元件310分別與一第一電極片410電性連接，而形成具有驅動電路之發光二極體陣列。此時，每一發光二極體晶粒210的一端透過第一電極片410電性連接於驅動元件310，另一端透過第二電極片420接地。驅動元件310的等效電路與第一電極片410、第二電極片420、資料線316、掃瞄線318的連接關係，大致與第一實施例相同，以下不再贅述。此外，磊晶層200也可再形成一透明保護層600，以覆蓋發光二極體晶粒210以及第二電極片420等，以形成保護作用。As shown in FIG. 14 and FIG. 15, a second electrode sheet 420 is formed over each of the light emitting diode dies 210, and the second electrode sheet 420 is grounded. Then, a circuit fabrication process is performed to illuminate the adjacent electrodes. The driving elements 310 are disposed between the diodes 210, and each of the driving elements 310 is electrically connected to a first electrode sheet 410 to form an array of LEDs having a driving circuit. At this time, one end of each of the light emitting diode chips 210 is electrically connected to the driving element 310 through the first electrode sheet 410, and the other end is grounded through the second electrode sheet 420. The connection relationship between the equivalent circuit of the driving element 310 and the first electrode sheet 410, the second electrode sheet 420, the data line 316, and the scanning line 318 is substantially the same as that of the first embodiment, and will not be described below. In addition, the epitaxial layer 200 may further form a transparent protective layer 600 to cover the LED die 210 and the second electrode sheet 420 to form a protective effect.
如圖16所示，驅動發光二極體晶粒210發光後，發光二極體晶粒210可朝向遠離次載板500上表面的方向發光。As shown in FIG. 16, after the light-emitting diode die 210 is driven to emit light, the light-emitting diode die 210 can emit light in a direction away from the upper surface of the secondary carrier 500.
如圖17至圖21所示，為本發明第三實施例所提供的一種主動式驅動發光二極體陣列的製作方法，其所形成的發光二極體陣列的發光方向與第二實施例所製作的發光二極體陣列不同。As shown in FIG. 17 to FIG. 21, a method for fabricating an active driving LED array according to a third embodiment of the present invention, the light emitting direction of the LED array formed by the second embodiment is shown in FIG. The array of light-emitting diodes produced is different.
如圖17所示，同樣地，提供一基板100，並於基板100的一上表面形成一磊晶層200。Similarly, as shown in FIG. 17, a substrate 100 is provided, and an epitaxial layer 200 is formed on an upper surface of the substrate 100.
如圖18所示，接著，磊晶層200上形成一驅動電路層300，驅動電路層300中具有複數個驅動元件310及複數個第一電極片410；並且，第一電極片410位於各驅動元件310與磊晶層200之間，並分別電性連接於驅動元件310。As shown in FIG. 18, a driving circuit layer 300 is formed on the epitaxial layer 200. The driving circuit layer 300 has a plurality of driving elements 310 and a plurality of first electrode sheets 410. Moreover, the first electrode sheet 410 is located at each driving. The component 310 is electrically connected to the epitaxial layer 200 and electrically connected to the driving component 310.
如圖19及圖20所示，對磊晶層200及驅動電路層300進行加工，例如蝕刻技術，以形成複數個發光二極體晶粒210，且每一發光二極體晶粒210分別位於一組第一電極片410及驅動元件310之下，亦即此時的各驅動元件310是位於對應的發光二極體晶粒210的上方，發光二極體晶粒210的一端透過第一電極片410電性連接於驅動元件310。此外，發光二極體晶粒210之間並非完全獨立，複數個發光二極體晶粒210的底部仍以磊晶層200連接，換句話說，發光二極體晶粒210為複數個形成於磊晶層200之上的凸塊，使得複數個發光二極體晶粒210共用同一個P型半導體層或N型半導體層，此一共用的半導體層可以直接接地。As shown in FIG. 19 and FIG. 20, the epitaxial layer 200 and the driving circuit layer 300 are processed, for example, an etching technique to form a plurality of light emitting diode crystal grains 210, and each of the light emitting diode crystal grains 210 is located. A set of first electrode sheets 410 and driving elements 310, that is, each driving element 310 at this time is located above the corresponding light emitting diode die 210, and one end of the light emitting diode die 210 passes through the first electrode. The sheet 410 is electrically connected to the driving element 310. In addition, the light-emitting diodes 210 are not completely independent, and the bottoms of the plurality of light-emitting diodes 210 are still connected by the epitaxial layer 200. In other words, the plurality of light-emitting diodes 210 are formed in a plurality. The bumps on the epitaxial layer 200 are such that the plurality of LED dipoles 210 share the same P-type semiconductor layer or N-type semiconductor layer, and the common semiconductor layer can be directly grounded.
如圖21所示，於相鄰之發光二極體晶粒210之間設置一第二電極片420，且第二電極片420位於磊晶層200上並且電性接地連接，而形成具有驅動電路之發光二極體陣列。此外，磊晶層200也可再形成一透明保護層600，以覆蓋發光二極體晶粒210以及第二電極片420等，以形成保護作用。As shown in FIG. 21, a second electrode sheet 420 is disposed between the adjacent LED dies 210, and the second electrode sheet 420 is located on the epitaxial layer 200 and electrically connected to the ground to form a driving circuit. Light-emitting diode array. In addition, the epitaxial layer 200 may further form a transparent protective layer 600 to cover the LED die 210 and the second electrode sheet 420 to form a protective effect.
如圖22所示，於第三實施例的發光二極體陣列中，發光方向係朝向基板100，而透過基板100透射而出，以避免被驅動元件310遮斷光線。因此，若需要向上發光，則需翻轉基板100，發光二極體陣列位於下方，而對基板100投射光線。As shown in FIG. 22, in the LED array of the third embodiment, the light emitting direction is directed toward the substrate 100 and transmitted through the substrate 100 to prevent the driving element 310 from blocking light. Therefore, if it is necessary to emit light upward, the substrate 100 needs to be turned over, and the array of light emitting diodes is located below, and the light is projected onto the substrate 100.
如圖23至圖25所示，為本發明第四實施例所提供的一種主動式驅動發光二極體陣列的製作方法。As shown in FIG. 23 to FIG. 25, a method for fabricating an active driving LED array according to a fourth embodiment of the present invention is shown.
如圖23所示，首先，提供一基板100，並於基板100的一上表面形成一磊晶層200。As shown in FIG. 23, first, a substrate 100 is provided, and an epitaxial layer 200 is formed on an upper surface of the substrate 100.
如圖24所示，對磊晶層200進行加工，例如蝕刻技術，以形成複數個發光二極體晶粒210，且複數個發光二極體晶粒210係呈一陣列型態排列，並且發光二極體晶粒210的底部仍以磊晶層200彼此相連，換句話說，第四實施例的發光二極體晶粒210亦為複數個形成於磊晶層200之上的凸塊，使得複數個發光二極體晶粒210共用同一個P型半導體層或N型半導體層，此一共用的半導體層可以直接接地，使得複數個發光二極體晶粒210有一端電性接地，而不需個別再製作用於接地的第二電極片420。As shown in FIG. 24, the epitaxial layer 200 is processed, for example, an etching technique to form a plurality of light emitting diode crystal grains 210, and the plurality of light emitting diode crystal grains 210 are arranged in an array pattern and emit light. The bottoms of the diode crystal grains 210 are still connected to each other by the epitaxial layer 200. In other words, the light-emitting diode crystal grains 210 of the fourth embodiment are also a plurality of bumps formed on the epitaxial layer 200, so that The plurality of LED dipoles 210 share the same P-type semiconductor layer or N-type semiconductor layer, and the common semiconductor layer can be directly grounded, so that the plurality of LED dipoles 210 have one end electrically grounded instead of The second electrode sheet 420 for grounding needs to be separately fabricated.
如圖25及圖26所示，所示，於每一發光二極體晶粒210上形成第一電極片410，並於相鄰之發光二極體晶粒210之間設置驅動元件310，使驅動元件310與第一電極片410電性連接，而讓發光二極體晶粒210的一端透過第一電極片410電性連接於驅動元件310，而磊晶層200直接接地，而形成發光二極體晶粒210的另一端接地的效果，以形成具有驅動電路之發光二極體陣列。此外，磊晶層200也可再形成一透明保護層600，以覆蓋發光二極體晶粒210以及第二電極片420等，以形成保護作用。As shown in FIG. 25 and FIG. 26, a first electrode sheet 410 is formed on each of the light emitting diode dies 210, and a driving element 310 is disposed between adjacent light emitting diode dies 210. The driving component 310 is electrically connected to the first electrode pad 410, and one end of the LED die 210 is electrically connected to the driving component 310 through the first electrode pad 410, and the epitaxial layer 200 is directly grounded to form a light emitting diode. The other end of the polar body die 210 is grounded to form an array of light emitting diodes having a driving circuit. In addition, the epitaxial layer 200 may further form a transparent protective layer 600 to cover the LED die 210 and the second electrode sheet 420 to form a protective effect.
如圖27所示，於此陣列中，發光二極體晶粒210可對兩方向發光，而不限定於單側發光。As shown in FIG. 27, in this array, the LED die 210 can emit light in both directions without being limited to one-sided illumination.
於本發明中，係直接於基板100或次載板500上逐一製作第一電極片410、第二電極片420、發光二極體晶粒210以及驅動元件310，而在基板100或次載板500直接形成具有驅動電路之發光二極體陣列，而不需先製作發光二極體晶粒210並移轉發光二極體晶粒210至驅動電路。In the present invention, the first electrode sheet 410, the second electrode sheet 420, the light emitting diode die 210, and the driving element 310 are formed one by one directly on the substrate 100 or the secondary carrier 500, and the substrate 100 or the secondary carrier 500 directly forms an array of light emitting diodes having a driving circuit without first fabricating the LED die 210 and transferring the LED die 210 to the driving circuit.
因此，本發明主動式驅動發光二極體陣列的製作方法不會有轉移良率、轉移時間的問題，而可有效降低加工成本並提升產率，而可有效地應用於高解析度大尺寸的LED顯示面板。Therefore, the method for fabricating the active driving LED array of the present invention does not have the problems of transfer yield and transfer time, but can effectively reduce the processing cost and improve the yield, and can be effectively applied to high resolution and large size. LED display panel.
100‧‧‧基板100‧‧‧Substrate
200‧‧‧磊晶層200‧‧‧ epitaxial layer
210‧‧‧發光二極體晶粒210‧‧‧Light Emitting Diode Grains
300‧‧‧驅動電路層300‧‧‧Drive circuit layer
310‧‧‧驅動元件310‧‧‧Drive components
310a‧‧‧等效電晶體開關310a‧‧‧ equivalent transistor switch
312‧‧‧第一薄膜電晶體312‧‧‧First film transistor
314‧‧‧第二薄膜電晶體314‧‧‧Second thin film transistor
316‧‧‧資料線316‧‧‧Information line
318‧‧‧掃瞄線318‧‧‧Scan line
410‧‧‧第一電極片410‧‧‧First electrode
410a‧‧‧第一電極層410a‧‧‧first electrode layer
420‧‧‧第二電極片420‧‧‧Second electrode
500‧‧‧次載板500‧‧‧ times carrier board
510‧‧‧接合層510‧‧‧ joint layer
600‧‧‧保護層600‧‧ ‧ protective layer
圖1、圖2、圖5、圖6以及圖7為本發明第一實施例中，主動式驅動發光二極體陣列於不同製程階段的剖面示意圖，用以說明主動式驅動發光二極體陣列的製作方法的流程。 圖3為圖2中A區域的放大圖。 圖4為本發明實施例中，等效電晶體開關之等效電路圖。 圖8為圖7中B區域的放大圖。 圖9為本發明第一實施例中，主動式驅動發光二極體陣列的剖面示意圖，用以說明發光方向。 圖10、圖11、圖12、圖13及圖14為本發明第二實施例中，主動式驅動發光二極體陣列於不同製程階段的剖面示意圖，用以說明主動式驅動發光二極體陣列的製作方法的流程。 圖15為圖14中C區域的放大圖。 圖16為本發明第二實施例中，主動式驅動發光二極體陣列的剖面示意圖，用以說明發光方向。 圖17、圖18、圖19及圖21為本發明第三實施例中，主動式驅動發光二極體陣列於不同製程階段的剖面示意圖，用以說明主動式驅動發光二極體陣列的製作方法的流程。 圖20為圖19中D區域的放大圖。 圖22為本發明第三實施例中，主動式驅動發光二極體陣列的剖面示意圖，用以說明發光方向。 圖23、圖24及圖25為本發明第四實施例中，主動式驅動發光二極體陣列於不同製程階段的剖面示意圖，用以說明主動式驅動發光二極體陣列的製作方法的流程。 圖26為圖25中E區域的放大圖。 圖27為本發明第四實施例中，主動式驅動發光二極體陣列的剖面示意圖，用以說明發光方向。FIG. 1 , FIG. 2 , FIG. 5 , FIG. 6 and FIG. 7 are schematic cross-sectional views of an active driving LED array in different process stages according to a first embodiment of the present invention, illustrating an active driving LED array. The flow of the production method. Figure 3 is an enlarged view of the area A in Figure 2. 4 is an equivalent circuit diagram of an equivalent transistor switch in an embodiment of the present invention. Figure 8 is an enlarged view of a region B in Figure 7. FIG. 9 is a cross-sectional view showing the active driving LED array in the first embodiment of the present invention for explaining the light emitting direction. 10, FIG. 11, FIG. 12, FIG. 13, and FIG. 14 are schematic cross-sectional views of an active driving LED array in different process stages according to a second embodiment of the present invention, illustrating an active driving LED array. The flow of the production method. Figure 15 is an enlarged view of a region C in Figure 14. FIG. 16 is a cross-sectional view showing an active driving LED array according to a second embodiment of the present invention for explaining a light emitting direction. 17 , FIG. 18 , FIG. 19 and FIG. 21 are schematic cross-sectional views of an active driving LED array in different process stages according to a third embodiment of the present invention, illustrating a method for fabricating an active driving LED array Process. Figure 20 is an enlarged view of a region D in Figure 19. FIG. 22 is a cross-sectional view showing an active driving LED array according to a third embodiment of the present invention for explaining a light emitting direction. FIG. 23, FIG. 24 and FIG. 25 are schematic cross-sectional views showing an active driving LED array in different process stages according to a fourth embodiment of the present invention, for illustrating a flow of a method for fabricating an active driving LED array. Figure 26 is an enlarged view of the area E in Figure 25. FIG. 27 is a cross-sectional view showing an active driving LED array according to a fourth embodiment of the present invention for explaining a light emitting direction.
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107107773A TWI650852B (en) | 2018-03-07 | 2018-03-07 | Method for manufacturing active matrix light-emitting-diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107107773A TWI650852B (en) | 2018-03-07 | 2018-03-07 | Method for manufacturing active matrix light-emitting-diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI650852B true TWI650852B (en) | 2019-02-11 |
| TW201939734A TW201939734A (en) | 2019-10-01 |
Family
ID=66214019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107107773A TWI650852B (en) | 2018-03-07 | 2018-03-07 | Method for manufacturing active matrix light-emitting-diode |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI650852B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310136A (en) * | 2019-07-23 | 2021-02-02 | 薛富盛 | Passive micro light-emitting diode array device with uniform brightness |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150171154A1 (en) * | 2013-12-17 | 2015-06-18 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus, and method of manufacturing the thin film transistor array substrate |
| TW201721833A (en) * | 2015-09-04 | 2017-06-16 | 香港北大青鳥顯示有限公司 | Light-emitting diode display panel with micro lens array |
-
2018
- 2018-03-07 TW TW107107773A patent/TWI650852B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150171154A1 (en) * | 2013-12-17 | 2015-06-18 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus, and method of manufacturing the thin film transistor array substrate |
| TW201721833A (en) * | 2015-09-04 | 2017-06-16 | 香港北大青鳥顯示有限公司 | Light-emitting diode display panel with micro lens array |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310136A (en) * | 2019-07-23 | 2021-02-02 | 薛富盛 | Passive micro light-emitting diode array device with uniform brightness |
| CN112310136B (en) * | 2019-07-23 | 2024-03-19 | 薛富盛 | Passive micro-LED array device with uniform brightness |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201939734A (en) | 2019-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10607973B2 (en) | Micro-LED array display devices with CMOS cells | |
| TWI717642B (en) | Display panel | |
| US10797040B2 (en) | Method of manufacturing display module using LED | |
| US10593658B2 (en) | Light emitting device and method of forming the same | |
| US20230335577A1 (en) | Display device and method of fabricating the same | |
| US10833220B2 (en) | Micro light emitting diode device | |
| KR102603494B1 (en) | Display device | |
| US10903267B2 (en) | System and method for making micro LED display | |
| US10903195B2 (en) | High-resolution micro-LED display device and manufacturing method of the same | |
| US20220254831A1 (en) | Double color micro led display panel | |
| KR20240040698A (en) | Display device and method of manufacturing the same | |
| TWI650852B (en) | Method for manufacturing active matrix light-emitting-diode | |
| US11476296B2 (en) | Double color micro LED display panel | |
| JP2023123546A (en) | Led transfer method and method of manufacturing display devices using the same | |
| US20220181381A1 (en) | Light emitting element and display device | |
| TWI819863B (en) | Display panel | |
| TWI781743B (en) | Display device and manufacturing method thereof | |
| KR102655336B1 (en) | Display apparatus and manufacturing method of the same | |
| US20240038933A1 (en) | Semiconductor light-emitting device package and display device comprising same | |
| CN114927511A (en) | Single-chip integrated large-area multicolor high-resolution display Micro-LED chip and manufacturing method thereof | |
| KR20220093085A (en) | Light emitting element for display and LED display device having same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |