TWI636600B - Organic light-emitting diode display device - Google Patents
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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Abstract
本揭露文件係揭露一種有機發光二極體顯示裝置。有機發光二極體顯示裝置包含基板、薄膜電晶體陣列、發光組件及光吸收層。薄膜電晶體陣列設置於基板的上表面。發光組件設置於薄膜電晶體陣列上,並包含第一電極層、有機層及第二電極層。第一電極層設置於靠近薄膜電晶體陣列之一側。有機層設置於第一電極層上。第二電極層相對第一電極層而設置於有機層上。其中第一電極層及第二電極層具有第一穿透率。光吸收層設置於第一電極層及薄膜電晶體陣列之間,且具有第二穿透率。其中,第一穿透率大於第二穿透率。 This disclosure document discloses an organic light emitting diode display device. The organic light emitting diode display device includes a substrate, a thin film transistor array, a light emitting component, and a light absorbing layer. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance. The light absorbing layer is disposed between the first electrode layer and the thin film transistor array, and has a second transmittance. The first transmittance is greater than the second transmittance.
Description
本發明是關係一種有機發光二極體顯示裝置,且特別是關於一種具有光吸收層的有機發光二極體顯示裝置。 The present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device having a light absorbing layer.
有機發光二極體顯示器被視為下一世代的主流技術。在傳統的有機發光二極體顯示器中,為了提高出光效率,採用高反射率之材料作為有機發光二極體的驅動電極,使得向下方發射的光線能夠被下方的驅動電極反射向上,從而得到較高的出光效率。此外,也有人提出微型光學共振腔的有機發光二極體顯示器,在此種技術中,除了有機發光二極體的下驅動電極必須使用高反射率的材料之外,上驅動電極也必須具備一定的反射率,此種類型的顯示器能夠提供較佳的色彩飽和度、較高的正視角亮度,但是也有一些缺點。例如,雖然在正視方向上提高了顯示器的亮度及色彩飽和度,但是卻造成大視角的影像的色彩失真,而且亮度隨視角增加而大幅的下降。 Organic light emitting diode displays are regarded as the mainstream technology of the next generation. In the traditional organic light emitting diode display, in order to improve the light emitting efficiency, a material with high reflectivity is used as the driving electrode of the organic light emitting diode, so that the light emitted downward can be reflected upward by the driving electrode below, thereby obtaining a relatively High light output efficiency. In addition, some people have proposed organic light-emitting diode displays with miniature optical resonant cavities. In this technology, in addition to the organic light-emitting diode's lower driving electrode must use a material with high reflectivity, the upper driving electrode must also have a certain The reflectivity of this type of display can provide better color saturation and higher brightness of positive viewing angle, but also has some disadvantages. For example, although the brightness and color saturation of the display are increased in the front view direction, the color of the image with a large viewing angle is distorted, and the brightness is greatly reduced as the viewing angle increases.
在上述的技術中,雖然得到高的出光效率,但 是也造成一些問題。例如,高反射率的電極會反射從外界入射的光線,因此當使用者處在高亮度的環境光源下(例如,室外的太陽光),從外界經由面板反射的光線將嚴重影響到原本顯示器的顯示畫面,導致使用者無法清楚看見原本顯示器的顯示畫面。此外,在微型光學共振腔的技術中,此種技術雖然能夠提供較佳的色彩飽和度以及較高的正視角亮度,但是因為必須使用高光學反射的電極,所以也面臨同樣的問題。 In the above technique, although high light extraction efficiency is obtained, It also caused some problems. For example, a highly reflective electrode reflects light incident from the outside, so when the user is under a high-brightness ambient light source (for example, outdoor sunlight), the light reflected from the outside through the panel will seriously affect the original display. The display screen prevents the user from clearly seeing the display screen of the original monitor. In addition, in the micro-optical resonant cavity technology, although this technology can provide better color saturation and higher brightness of the positive viewing angle, it also faces the same problem because it must use electrodes with high optical reflection.
為了解決上述的問題,在習知技術中,在有機發光二極體顯示器的顯示面上方外加一組抗反射的光學膜組,以降低有機發光二極體面板對外界光線的反射現象。這種抗反射的光學膜組的結構是由偏光片(polarizer)與1/4波板(1/4 λ wave plate)所構成。此種結構的抗反射光學膜組雖然解決外界光的反射問題,但是卻同時導致有機發光二極體顯示器的亮度損失達50%-60%(因一片偏光片的穿透率僅約40-50%)。而且所額外添加的光學膜片組為一外貼的結構,造成整體裝置的厚度及重量的增加。因此,有必要提出一種新的有機發光二極體顯示面板,以改善此一存在的技術問題。 In order to solve the above-mentioned problems, in the conventional technology, an anti-reflection optical film group is added above the display surface of the organic light emitting diode display to reduce the external light reflection phenomenon of the organic light emitting diode panel. The structure of such an anti-reflection optical film group is composed of a polarizer and a 1/4 wave plate. Although the anti-reflection optical film group of this structure solves the problem of reflection of external light, it also causes the brightness loss of the organic light emitting diode display to reach 50% -60% (because the transmittance of a polarizer is only about 40-50 %). In addition, the additional optical film group is an externally attached structure, which results in an increase in the thickness and weight of the overall device. Therefore, it is necessary to propose a new organic light emitting diode display panel to improve the existing technical problems.
此外,在習知技術中OLED發光元件的高反射電極,該高反射電極本身為高活性電極,容易受外界濕氣以及氧氣影響氧化,進而影響到OLED元件的壽命。因此OLED需要嚴密的封裝製程,來避免外界的水氣以及氧氣進入OLED元件內部。目前最常使用的是以玻璃基板作為 OLED元件的上下基板,且利用該玻璃基板達到較低的阻水、氧穿透率,確保OLED元件的壽命以及品質。但如果考慮到整體的重量、厚度,甚至是未來可饒式的應用,就不可避免的上、下基板都需要使用到塑膠基板。但是使用到塑膠機板,將會降低阻水、氧穿透的能力,進而降低OLED元件的壽命以及品質。 In addition, in the conventional technology, a highly reflective electrode of an OLED light-emitting element, which is a highly active electrode, is easily oxidized by external moisture and oxygen, thereby affecting the life of the OLED element. Therefore, the OLED needs a strict packaging process to prevent outside water and oxygen from entering the OLED element. The most commonly used glass substrate is currently used The upper and lower substrates of the OLED element, and the glass substrate is used to achieve lower water resistance and oxygen transmission rate to ensure the life and quality of the OLED element. However, if the overall weight, thickness, and even future applications can be considered, it is inevitable that the upper and lower substrates need to use plastic substrates. However, the use of plastic machine boards will reduce the ability to block water and oxygen, and thus reduce the life and quality of OLED elements.
有鑑於此,本案採用高穿透率的材料來製作有機發光二極體顯示裝置中的電極,並且將具有光吸收作用的疊層設計於發光組件下方,藉以有效提升顯示裝置的明暗對比,並且減少發光效率的損失。此外,更可提高有機發光二極體顯示裝置的信賴性,並且更適合用於可撓式的應用。 In view of this, this case uses high-transmittance materials to make electrodes in organic light-emitting diode display devices, and designs a laminate with light absorption under the light-emitting component, thereby effectively improving the light-dark contrast of the display device, and Reduce the loss of luminous efficiency. In addition, the reliability of the organic light emitting diode display device can be further improved, and it is more suitable for flexible applications.
本案的一態樣為提供一種有機發光二極體顯示裝置。有機發光二極體顯示裝置包含基板、薄膜電晶體陣列、發光組件及光吸收層。薄膜電晶體陣列設置於基板的上表面。發光組件設置於薄膜電晶體陣列上,並包含第一電極層、有機層及第二電極層。第一電極層設置於靠近薄膜電晶體陣列之一側。有機層設置於第一電極層上。第二電極層相對第一電極層而設置於有機層上。其中第一電極層及第二電極層具有第一穿透率。光吸收層設置於第一電極層及薄膜電晶體陣列之間,且具有第二穿透率。其中,第一穿透率大於第二穿透率。 One aspect of the present application is to provide an organic light emitting diode display device. The organic light emitting diode display device includes a substrate, a thin film transistor array, a light emitting component, and a light absorbing layer. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance. The light absorbing layer is disposed between the first electrode layer and the thin film transistor array, and has a second transmittance. The first transmittance is greater than the second transmittance.
本案的另一態樣為提供一種有機發光二極體顯示裝置。有機發光二極體顯示裝置包含具光吸收功能的基板、薄 膜電晶體陣列及發光組件。薄膜電晶體陣列設置於基板的上表面。發光組件設置於薄膜電晶體陣列上,並包含第一電極層、有機層及第二電極層。第一電極層設置於靠近薄膜電晶體陣列之一側。有機層設置於第一電極層上。第二電極層相對第一電極層而設置於有機層上。其中第一電極層及第二電極層具有第一穿透率且基板具有第二穿透率,而第一穿透率大於第二穿透率。 Another aspect of the present application is to provide an organic light emitting diode display device. An organic light emitting diode display device includes a substrate having a light absorption function, a thin Membrane transistor array and light emitting component. The thin film transistor array is disposed on the upper surface of the substrate. The light emitting component is disposed on the thin film transistor array and includes a first electrode layer, an organic layer, and a second electrode layer. The first electrode layer is disposed near one side of the thin film transistor array. The organic layer is disposed on the first electrode layer. The second electrode layer is disposed on the organic layer opposite to the first electrode layer. The first electrode layer and the second electrode layer have a first transmittance and the substrate has a second transmittance, and the first transmittance is greater than the second transmittance.
綜上所述,透過應用上述之實施例,以高穿透率的導電材質作為第一電極層及第二電極層,再以光吸收層減少外界光源的反射,減少添加額外光學膜片組的必要。據此,可避免外部光線反射而影響畫面品質,提升有機發光二極體顯示裝置的明暗對比。此外,由於無需任何外掛的光學膜片組,因此不會影響有機發光二極體顯示裝置的自發光效率,且更可減輕有機發光二極體顯示裝置本身的厚度及重量。 In summary, by applying the above-mentioned embodiment, a highly transmissive conductive material is used as the first electrode layer and the second electrode layer, and then the light absorption layer is used to reduce reflection of external light sources and reduce the number of additional optical film groups. necessary. According to this, it is possible to avoid the reflection of external light and affect the picture quality, and improve the light-dark contrast of the organic light-emitting diode display device. In addition, since no external optical film group is required, the self-light-emitting efficiency of the organic light-emitting diode display device is not affected, and the thickness and weight of the organic light-emitting diode display device itself can be reduced.
100‧‧‧有機發光二極體顯示裝置 100‧‧‧organic light emitting diode display device
110‧‧‧基板 110‧‧‧ substrate
111‧‧‧外界光源 111‧‧‧External light source
113‧‧‧自發光 113‧‧‧ self-luminous
115‧‧‧基板 115‧‧‧ substrate
120‧‧‧薄膜電晶體陣列 120‧‧‧ thin film transistor array
125‧‧‧電性絕緣層 125‧‧‧electrical insulation
130‧‧‧平坦層 130‧‧‧ flat layer
140‧‧‧光吸收層 140‧‧‧light absorbing layer
150‧‧‧第一電極層 150‧‧‧first electrode layer
160‧‧‧有機層 160‧‧‧ organic layer
161‧‧‧電洞注入層 161‧‧‧ Hole injection layer
162‧‧‧電洞傳遞層 162‧‧‧ Hole Transmission Layer
163‧‧‧有機發光層 163‧‧‧Organic light emitting layer
164‧‧‧電洞阻礙層 164‧‧‧ Hole barrier
165‧‧‧電子傳遞層 165‧‧‧ electron transfer layer
170‧‧‧第二電極層 170‧‧‧Second electrode layer
175‧‧‧彩色濾光層 175‧‧‧color filter
180‧‧‧封裝板 180‧‧‧Packaging board
190‧‧‧發光組件 190‧‧‧Light-emitting components
200‧‧‧有機發光二極體顯示裝置 200‧‧‧Organic light-emitting diode display device
300‧‧‧有機發光二極體顯示裝置 300‧‧‧Organic light-emitting diode display device
400‧‧‧有機發光二極體顯示裝置 400‧‧‧Organic light emitting diode display device
500‧‧‧有機發光二極體顯示裝置 500‧‧‧organic light emitting diode display device
第1A-1B圖為根據本發明一實施例繪示一種有機發光二極體顯示裝置之示意圖;第2圖為根據本發明一實施例繪示一種有機發光二極體顯示裝置之示意圖;第3圖為根據本發明一實施例繪示一種有機發光二極體顯示裝置之示意圖;第4圖為根據本發明一實施例繪示一種有機發光二極體顯 示裝置之示意圖;第5圖為根據本發明一實施例繪示一種有機發光二極體顯示裝置之示意圖。 1A-1B are schematic diagrams illustrating an organic light emitting diode display device according to an embodiment of the present invention; FIG. 2 is a schematic diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention; FIG. Is a schematic diagram showing an organic light emitting diode display device according to an embodiment of the present invention; FIG. 4 is a diagram showing an organic light emitting diode display according to an embodiment of the present invention FIG. 5 is a schematic diagram illustrating an organic light emitting diode display device according to an embodiment of the present invention.
以下將以圖式及詳細敘述清楚說明本揭示內容之精神,任何所屬技術領域中具有通常知識者在瞭解本揭示內容之較佳實施例後,當可由本揭示內容所教示之技術,加以改變及修飾,其並不脫離本揭示內容之精神與範圍。 The following will clearly illustrate the spirit of the present disclosure with diagrams and detailed descriptions. Any person with ordinary knowledge in the technical field who understands the preferred embodiments of the present disclosure can be changed by the techniques taught in the present disclosure and Modifications do not depart from the spirit and scope of this disclosure.
關於本文中所使用之『第一』、『第二』、...等,並非特別指稱次序或順位的意思,亦非用以限定本案,其僅為了區別以相同技術用語描述的元件或操作。 Regarding the "first", "second", ..., etc. used in this document, they do not specifically refer to the order or order, nor are they used to limit the case. They are only used to distinguish elements or operations described in the same technical terms. .
關於本文中所使用之方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本創作。此外,內容中所稱的方位「上」及「下」只是用來表示相對的位置關係。再者,一個元件形成在另一個元件「上」、「之上」、「下」或「之下」可包括實施例中的一個元件與另一個元件直接接觸,或也可包括一個元件與另一個元件之間還有其他額外元件使一個元件與另一個元件無直接接觸。 Regarding the directional terms used in this article, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Therefore, the terminology used is used to explain and is not used to limit the creation. In addition, the directions "up" and "down" in the content are only used to indicate relative positional relationships. Furthermore, an element formed on another element "on," "above," "below," or "under" may include one element in the embodiment in direct contact with another element, or may include one element and another element There are other additional elements between one element so that one element is not in direct contact with another element.
請參照第1A圖,第1A圖為根據本發明的一實施例繪示一種有機發光二極體顯示裝置100的示意圖。如第1A圖所示,有機發光二極體顯示裝置100包含基板110、薄膜電晶體陣列120、光吸收層140及發光組件190。其中, 發光組件190包括第一電極層150、有機層160及第二電極層170。 Please refer to FIG. 1A, which is a schematic diagram illustrating an organic light emitting diode display device 100 according to an embodiment of the present invention. As shown in FIG. 1A, the organic light emitting diode display device 100 includes a substrate 110, a thin film transistor array 120, a light absorption layer 140, and a light emitting element 190. among them, The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170.
更具體來講,薄膜電晶體陣列120是設置於基板110的一上表面。發光組件190是設置於薄膜電晶體陣列120上,並且發光組件190中的第一電極層150是設置於靠近薄膜電晶體陣列120之一側,有機層160是設置於第一電極層150上,而第二電極層170是相對第一電極層150來設置於有機層160上。光吸收層140是設置於發光組件190及薄膜電晶體陣列120之間,具體是設置於第一電極層150及薄膜電晶體陣列120之間。 More specifically, the thin film transistor array 120 is disposed on an upper surface of the substrate 110. The light-emitting element 190 is disposed on the thin-film transistor array 120, and the first electrode layer 150 in the light-emitting element 190 is disposed near one side of the thin-film transistor array 120. The organic layer 160 is disposed on the first electrode layer 150. The second electrode layer 170 is disposed on the organic layer 160 opposite to the first electrode layer 150. The light absorbing layer 140 is disposed between the light-emitting element 190 and the thin film transistor array 120, and is specifically disposed between the first electrode layer 150 and the thin film transistor array 120.
本實施例的有機發光二極體顯示裝置100更包括一電性絕緣層125,設置於薄膜電晶體陣列120的上表面。電性絕緣層125可例如為一薄膜層,覆蓋在薄膜電晶體陣列120的薄膜電晶體的表面,用以提供薄膜電晶體陣列120的電性隔離效果,並進一步提供保護作用,避免後續製程損毀薄膜電晶體。電性絕緣層125的可例如採用二氧化矽、氮化矽等材料。 The organic light emitting diode display device 100 of this embodiment further includes an electrical insulating layer 125 disposed on the upper surface of the thin film transistor array 120. The electrical insulating layer 125 may be, for example, a thin-film layer covering the surface of the thin-film transistor of the thin-film transistor array 120 to provide the electrical isolation effect of the thin-film transistor array 120 and further provide a protective effect to avoid subsequent process damage. Thin film transistor. As the electrical insulating layer 125, materials such as silicon dioxide and silicon nitride can be used.
本實施例的有機發光二極體顯示裝置100更包括一平坦層130。平坦層130是由絕緣材質所形成,並且設置於光吸收層140及電性絕緣層125之間,具體是設置於電性絕緣層125的上表面,用來平坦化電性絕緣層125及薄膜電晶體陣列120整體因薄膜電晶體陣列120所造成之不平整表面。 The organic light emitting diode display device 100 of this embodiment further includes a flat layer 130. The planarization layer 130 is formed of an insulating material and is disposed between the light absorption layer 140 and the electrical insulation layer 125, and is specifically disposed on the upper surface of the electrical insulation layer 125 to planarize the electrical insulation layer 125 and the thin film. The transistor array 120 has an uneven surface due to the thin film transistor array 120 as a whole.
本實施例的有機發光二極體顯示裝置100更包 括一封裝板180,設置於第二電極層170上,並與基板110對應來封裝有機發光二極體顯示裝置100,避免其中的元件與外界的氧氣及/或水氣接觸而產生劣化。 The organic light emitting diode display device 100 of this embodiment is more compact. A packaging board 180 is disposed on the second electrode layer 170 and corresponds to the substrate 110 to package the organic light emitting diode display device 100 to prevent the components therein from contacting with external oxygen and / or water and causing degradation.
承上所述,本實施例的有機發光二極體顯示裝置100的架構是由薄膜電晶體陣列120、電性絕緣層125、平坦層130、光吸收層140、第一電極層150、有機層160、第二電極層170及封裝板180依序堆疊於基板110上所構成。藉此,由於光吸收層140是整合於有機發光二極體顯示裝置100內部,並且設置於發光組件190下方,因此,外界光源111射入有機發光二極體顯示裝置100,並逐層到達光吸收層140時會全部被吸收,而不會產生反射,可以提高顯示上的明暗對比。此外,光吸收層140所在位置不會影響發光組件190所產生的自發光113,因而可以提升有機發光二極體顯示裝置100的發光效率。再者,由於不需像習知技術一樣額外添加外貼結構的光學膜片組,因此有機發光二極體顯示裝置100整體更可避免厚度及重量的增加。 As mentioned above, the structure of the organic light emitting diode display device 100 of this embodiment is composed of a thin film transistor array 120, an electrically insulating layer 125, a flat layer 130, a light absorbing layer 140, a first electrode layer 150, and an organic layer. 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate 110. Therefore, since the light absorption layer 140 is integrated inside the organic light emitting diode display device 100 and is disposed below the light emitting component 190, the external light source 111 enters the organic light emitting diode display device 100 and reaches the light layer by layer. When the absorbing layer 140 is completely absorbed without reflection, the light and dark contrast on the display can be improved. In addition, the position of the light absorbing layer 140 does not affect the self-emission 113 generated by the light-emitting component 190, so that the light-emitting efficiency of the organic light-emitting diode display device 100 can be improved. In addition, since there is no need to add an external optical film group as in the conventional technology, the organic light emitting diode display device 100 as a whole can avoid an increase in thickness and weight.
從原理上來看,當第一電極層150及第二電極層170連接至電壓源或電流源時,有機層160的電子及電洞會隨著電壓產生移動及結合,將能量由電能轉換成可見光。此外,若有機層160搭配不同的有機材質,則可產生不同的顏色光,以達成多彩或全彩顯示的效果。 In principle, when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the electrons and holes of the organic layer 160 will move and combine with the voltage, converting energy from electrical energy into visible light. . In addition, if the organic layer 160 is matched with different organic materials, different color lights can be generated to achieve a colorful or full-color display effect.
於操作上,薄膜電晶體陣列120是作為控制元件,用來電性連接第一電極層150。在本實施例中,電性絕緣層125、平坦層130及光吸收層140皆是絕緣層的設計, 並且構成一複合疊層結構的關係。所述複合疊層結構開設有複數個通孔(圖未繪示),並且在通孔中填充有導電材料,使得第一電極層150與薄膜電晶體陣列120之間是通過通孔中的導電材料來電性連接。需說明的是,當第一電極層150及第二電極層170連接至電壓源或電流源時,第一電極層150的極性與第二電極層170的極性相異。舉例而言,當第一電極層150為陽性時,第二電極層170為陰性;相反地,當第一電極層150為陰性時,第二電極層170為陽性。 In operation, the thin film transistor array 120 is used as a control element for electrically connecting the first electrode layer 150. In this embodiment, the design of the electrical insulating layer 125, the flat layer 130, and the light absorbing layer 140 are all insulating layers. And constitute a relationship of a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and conductive materials are filled in the through holes, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conducted through the through holes. Material call connection. It should be noted that when the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the polarity of the first electrode layer 150 and the polarity of the second electrode layer 170 are different. For example, when the first electrode layer 150 is positive, the second electrode layer 170 is negative; conversely, when the first electrode layer 150 is negative, the second electrode layer 170 is positive.
更進一步說明的是,本實施例的第一電極層150及第二電極層170具有較高的一第一穿透率約為大於70%。較佳地,第一電極層150及第二電極層170是採用低活性且同時兼具光學低反射率及高穿透率的材料,例如可由氧化銦錫(indium tin oxide,ITO)、氧化銦鋅(indium zinc oxide,IZO)氧化鋁鋅(aluminum zinc oxide,AZO)、氧化銦鋅錫(indium tin zinc oxide,ITZO)、氧化鎘錫(cadmium tin oxide,CTO)、氧化錫(tin oxide)、氧化鋅(zinc oxide)、氧化鎘(cadmium oxide)、氧化銦鎵鋅(indium gallium zinc oxide,InGaZnO)、氧化銦鎵鋅鎂(indium gallium zinc magnesium oxide,InGaZnMgO)、氧化銦鎵鋁(indium gallium aluminum oxide,InGaAlO)或氧化銦鎵鎂(indium gallium magnesium oxide,InGaMgO)等材質所形成,但並不以此為限。本實施例的光吸收層140為了具有較佳的光學吸收效果,設計具有較低的一第二穿透率,第二穿透率約小於 30%。舉例而言,光吸收層140可由黑色或深色的光學吸收材質所形成,例如:染色材料、石墨、碳材質等,實際也並非本案所限制。對此,相較之下,本實施例的第一電極層150及第二電極層170所具有的第一穿透率是大於光吸收層140的第二穿透率。 It is further explained that the first electrode layer 150 and the second electrode layer 170 in this embodiment have a high first transmittance of approximately greater than 70%. Preferably, the first electrode layer 150 and the second electrode layer 170 are made of a material having low activity and having both optical low reflectance and high transmittance. For example, indium tin oxide (ITO), indium oxide can be used. Indium zinc oxide (IZO), aluminum zinc oxide (AZO), indium tin zinc oxide (ITZO), cadmium tin oxide (CTO), tin oxide, tin oxide, Zinc oxide, cadmium oxide, indium gallium zinc oxide (InGaZnO), indium gallium zinc magnesium oxide (InGaZnMgO), indium gallium aluminum formed of materials such as oxide (InGaAlO) or indium gallium magnesium oxide (InGaMgO), but is not limited thereto. In order to have a better optical absorption effect, the light absorption layer 140 of this embodiment is designed to have a lower second transmittance, and the second transmittance is less than about 30%. For example, the light absorbing layer 140 may be formed of a black or dark optical absorbing material, such as a dyeing material, graphite, carbon material, etc., which is not actually limited by this case. In contrast, in this embodiment, the first transmittance of the first electrode layer 150 and the second electrode layer 170 is greater than the second transmittance of the light absorption layer 140.
此外,為了降低有機發光二極體顯示裝置100的光學反射效果,本實施例的第一電極層150、第二電極層170及光吸收層在材質的選用上,可進一步選擇具有較低反射率特性的材質,較佳是分別小於30%的反射率。 In addition, in order to reduce the optical reflection effect of the organic light emitting diode display device 100, the material of the first electrode layer 150, the second electrode layer 170, and the light absorption layer in this embodiment may be further selected to have a lower reflectance. The characteristic materials preferably have a reflectance of less than 30%.
進一步說明的是,本實施例的有機層160實際是一複合層的結構設計,如第1B圖所示,有機層160可例如包含電洞注入層(HIL)161、電洞傳遞層(HTL)162、有機發光層(EML)163、電洞阻礙層(HBL)164及電子傳遞層(ETL)165,且依序設置於第一電極層150上而位於第一電極層150及第二電極層170之間。需了解的是,有機層160中的各層結構並非本實施例所限制,實際可依需求進行調整設計。 It is further explained that the organic layer 160 in this embodiment is actually a structural design of a composite layer. As shown in FIG. 1B, the organic layer 160 may include, for example, a hole injection layer (HIL) 161 and a hole transfer layer (HTL). 162, organic light emitting layer (EML) 163, hole blocking layer (HBL) 164, and electron transfer layer (ETL) 165, and are sequentially disposed on the first electrode layer 150 and located on the first electrode layer 150 and the second electrode layer Between 170. It should be understood that the structure of each layer in the organic layer 160 is not limited by this embodiment, and the design can be adjusted according to actual needs.
請一併參照第1A及1B圖,當第一電極層150及第二電極層170連接至電壓源或電流源時,有機發光層163產生自發光113,且所產生的自發光113會向上發射及向下發射。由於第二電極層170具有高的穿透率,有機發光層163所產生的自發光113會穿過第二電極層170向上發射。當有機發光層163產生向下自發光113時,此向下自發光113會穿透第一電極層150發射至光吸收層140,換句話說,本實 施例的有機發光二極體顯示裝置100是為向上發射型(Top Emission)的形式。此時,光吸收層140具有低反射率及低穿透率,光吸收層140會吸收有機發光層163的向下自發光113,且不反射此向下自發光113。 Please refer to FIGS. 1A and 1B together. When the first electrode layer 150 and the second electrode layer 170 are connected to a voltage source or a current source, the organic light-emitting layer 163 generates self-emission 113 and the generated self-emission 113 will emit upward. And launch downwards. Since the second electrode layer 170 has a high transmittance, the self-luminescence 113 generated by the organic light emitting layer 163 is emitted upward through the second electrode layer 170. When the organic light-emitting layer 163 generates a downward self-luminescence 113, the downward self-luminescence 113 penetrates the first electrode layer 150 and is emitted to the light absorption layer 140. In other words, this embodiment The organic light emitting diode display device 100 of the embodiment is a top emission type. At this time, the light absorption layer 140 has a low reflectance and a low transmittance. The light absorption layer 140 absorbs the downward self-emission 113 of the organic light-emitting layer 163 and does not reflect this downward self-emission 113.
由以上說明可知,第一電極層150及第二電極層170皆具有高穿透率及低反射率的特性。此外,有機發光二極體顯示裝置100具有自發光113的特性,因此當有機發光二極體顯示裝置100處於高照度光源的環境下,外界光源111會穿過透明的第二電極層170及第一電極層150直接射入光吸收層140而被光吸收層140所吸收,並且第一電極層150及第二電極層170也同時得以降低產生外界光源111的反射光,整體提升有機發光二極體顯示裝置100的對比。此外,光吸收層140的所在位置不會影響發光組件190所產生的向上自發光113,可以有效提升有機發光二極體顯示裝置100的發光效率。 As can be seen from the above description, both the first electrode layer 150 and the second electrode layer 170 have characteristics of high transmittance and low reflectance. In addition, the organic light emitting diode display device 100 has the characteristics of self-luminous 113. Therefore, when the organic light emitting diode display device 100 is in a high-illuminance light source environment, the external light source 111 passes through the transparent second electrode layer 170 and the first An electrode layer 150 directly enters the light absorption layer 140 and is absorbed by the light absorption layer 140. At the same time, the first electrode layer 150 and the second electrode layer 170 can also reduce the reflected light from the external light source 111 and improve the organic light emitting diode as a whole. Comparison of the volume display device 100. In addition, the position of the light absorbing layer 140 does not affect the upward self-emission 113 generated by the light-emitting component 190, which can effectively improve the light-emitting efficiency of the organic light-emitting diode display device 100.
在本發明的其他實施例中,光吸收層140進一步可以是單層緻密的有機材質或無機材質結構,或是複合有機材質及無機材質交錯的多層結構。具體效果可以是將水氣及氧氣隔絕於外部,或是將水氣及氧氣吸附,也可同時兼具隔絕及吸附水氧的功能,以達到阻絕水氣及氧氣穿透至發光組件190內部的作用,提高有機發光二極體顯示裝置100的信賴性。 In other embodiments of the present invention, the light absorbing layer 140 may further have a single-layer dense organic or inorganic material structure, or a multilayer structure in which a composite organic material and an inorganic material are interlaced. The specific effect can be to isolate water vapor and oxygen from the outside, or to adsorb water vapor and oxygen, or to simultaneously isolate and adsorb water oxygen, so as to prevent water vapor and oxygen from penetrating into the interior of the light-emitting component 190. Function to improve the reliability of the organic light emitting diode display device 100.
最後,補充說明的是,由於本實施例的光吸收層140是設置在薄膜電晶體陣列120與第一電極層150之 間,因此光吸收層140可以作為薄膜電晶體陣列120的遮光層,避免薄膜電晶體陣列120在照射到強烈的外界光源111的光線之後產生光電流效應的缺陷,進一步具有保護薄膜電晶體陣列120的效果。此外,由於光吸收層140為一完整平面的設計態樣,因此可同時覆蓋薄膜電晶體陣列120的金屬導電線路(圖未示),以避免金屬導電線路的反光以及減少其他外觀問題的產生。 Finally, it is added that the light absorbing layer 140 in this embodiment is disposed between the thin film transistor array 120 and the first electrode layer 150. Therefore, the light absorbing layer 140 can be used as a light shielding layer of the thin film transistor array 120 to avoid the defect of the photocurrent effect caused by the thin film transistor array 120 after irradiating the light from the strong external light source 111 and further protect the thin film transistor array 120 Effect. In addition, since the light absorbing layer 140 is a complete planar design, it can cover the metal conductive circuits (not shown) of the thin film transistor array 120 at the same time to avoid reflection of the metal conductive circuits and reduce other appearance problems.
請參照第2圖,第2圖為根據本發明的一實施例繪示一種有機發光二極體顯示裝置200的示意圖。本實施例的有機發光二極體顯示裝置200與前述第1A圖實施例的有機發光二極體顯示裝置100近似,差異點在於,本實施例的有機發光二極體顯示裝置200進一步包含一彩色濾光層175,設置於封裝板180上,並位於封裝板180和第二電極層170之間。其中,彩色濾光層175在製作上可例如是以封裝板180作為基材,並在其上製作複數個彩色區塊(圖未繪示)來製成。彩色濾光層175進一步具有光學吸收的效果,舉例而言,以紅色的彩色區塊為例,彩色濾光層175會使外界光源111的紅色波段通過,並將其他顏色的波段吸收。如此一來,彩色濾光層175會吸收外界光源111的部份光源,而未被彩色濾光層175所吸收的其餘外界光源111會逐層穿過彩色濾光層175、第二電極層170、有機層160及第一電極層150射入光吸收層140,並且被光吸收層140所吸收。於此情況下,外界光源111會被彩色濾光層175及光吸收層140吸收,更降低外界光源111反射的機率,藉此在外部環 境的高亮度下,有機發光二極體顯示裝置200可以有更佳的可視性。 Please refer to FIG. 2, which is a schematic diagram illustrating an organic light emitting diode display device 200 according to an embodiment of the present invention. The organic light-emitting diode display device 200 of this embodiment is similar to the organic light-emitting diode display device 100 of the embodiment shown in FIG. 1A. The difference is that the organic light-emitting diode display device 200 of this embodiment further includes a color The filter layer 175 is disposed on the packaging plate 180 and is located between the packaging plate 180 and the second electrode layer 170. Wherein, the color filter layer 175 can be manufactured by using the packaging board 180 as a base material and manufacturing a plurality of color blocks (not shown) thereon. The color filter layer 175 further has an optical absorption effect. For example, taking a red color block as an example, the color filter layer 175 allows the red band of the external light source 111 to pass through and absorbs bands of other colors. In this way, the color filter layer 175 will absorb part of the light sources of the external light source 111, and the remaining external light sources 111 that are not absorbed by the color filter layer 175 will pass through the color filter layer 175 and the second electrode layer 170 layer by layer. The organic layer 160 and the first electrode layer 150 enter the light absorption layer 140 and are absorbed by the light absorption layer 140. In this case, the external light source 111 will be absorbed by the color filter layer 175 and the light absorption layer 140, and the probability of reflection of the external light source 111 will be further reduced. Under the high brightness of the environment, the organic light emitting diode display device 200 can have better visibility.
此外,彩色濾光層175的多數個彩色區塊的位置會對應至有機發光二極體顯示裝置200本身的次像素。舉例而言,彩色濾光層175的紅色區塊會對應至有機發光二極體顯示裝置200的紅色次像素,以此類推。上述紅色區塊僅是用以舉例解釋,並非用以限制本發明,任何顏色區塊的彩色濾光層功能皆在本發明的保護範圍內。 In addition, the positions of the plurality of color blocks of the color filter layer 175 correspond to the sub-pixels of the organic light emitting diode display device 200 itself. For example, the red block of the color filter layer 175 corresponds to the red sub-pixel of the organic light emitting diode display device 200, and so on. The above-mentioned red blocks are only used as examples for explanation, and are not intended to limit the present invention. The function of the color filter layer of any color block is within the protection scope of the present invention.
請參照第3圖,第3圖為根據本發明的一實施例繪示的一種有機發光二極體顯示裝置300的示意圖。由於本實施例的有機發光二極體顯示裝置300與前述第1A圖實施例的有機發光二極體顯示裝置100近似,以下將僅描述二者之間的差異。 Please refer to FIG. 3, which is a schematic diagram of an organic light emitting diode display device 300 according to an embodiment of the present invention. Since the organic light emitting diode display device 300 of this embodiment is similar to the organic light emitting diode display device 100 of the embodiment in FIG. 1A described above, only the differences between the two will be described below.
如第3圖所示,有機發光二極體顯示裝置300包含基板110、薄膜電晶體陣列120、電性絕緣層125、光吸收層140及發光組件190。其中,發光組件190包括第一電極層150、有機層160及第二電極層170。整體來講,薄膜電晶體陣列120、電性絕緣層125、光吸收層140、第一電極層150、有機層160、第二電極層170及封裝板180是依序堆疊於基板110上。 As shown in FIG. 3, the organic light emitting diode display device 300 includes a substrate 110, a thin film transistor array 120, an electrical insulating layer 125, a light absorption layer 140, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the electrical insulating layer 125, the light absorption layer 140, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the package board 180 are sequentially stacked on the substrate 110.
本實施例的有機發光二極體顯示裝置300相較於第1A圖的有機發光二極體顯示裝置100的不同之處在於,本實施例的有機發光二極體顯示裝置300省去平坦層130的結構設計,而是直接利用光吸收層140來平坦化薄膜 電晶體陣列120的表面。 The organic light emitting diode display device 300 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 300 of this embodiment omits the flat layer 130. Structure design, but directly use the light absorption layer 140 to planarize the thin film The surface of the transistor array 120.
具體而言,本實施例的光吸收層140具有光學吸收及平坦化的效果。換句話說,光吸收層140取代了平坦層130。於此情況下,本實施例的電性絕緣層125及光吸收層140是構成一複合疊層結構的關係。所述複合疊層結構開設有複數個通孔(圖未繪示),並且通孔中填充有導電材料,使第一電極層150與薄膜電晶體陣列120通過通孔中的導電材料來電性連接。如此一來,更可進一步地減少有機發光二極體顯示裝置300的厚度及重量。 Specifically, the light absorption layer 140 of this embodiment has the effects of optical absorption and planarization. In other words, the light absorbing layer 140 replaces the flat layer 130. In this case, the electrical insulating layer 125 and the light absorbing layer 140 of this embodiment are in a relationship of forming a composite laminated structure. The composite laminated structure is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically connected through the conductive material in the through holes. . In this way, the thickness and weight of the organic light emitting diode display device 300 can be further reduced.
在另一實施方式中,本實施例的有機發光二極體顯示裝置300更可進一步設計包含有前述第2圖實施例的有機發光二極體顯示裝置200中的彩色濾光層175。其中有關彩色濾光層175的疊層位置及相關功能就不在此加以贅述。 In another embodiment, the organic light emitting diode display device 300 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.
請參照第4圖,第4圖為根據本發明的一實施例繪示一種有機發光二極體顯示裝置400的示意圖。由於本實施例的有機發光二極體顯示裝置400與前述第1A圖實施例的有機發光二極體顯示裝置100近似,以下將僅描述二者之間的差異。 Please refer to FIG. 4, which is a schematic diagram illustrating an organic light emitting diode display device 400 according to an embodiment of the present invention. Since the organic light emitting diode display device 400 of this embodiment is similar to the organic light emitting diode display device 100 of the aforementioned embodiment in FIG. 1A, only the differences between the two will be described below.
如第4圖所示,有機發光二極體顯示裝置400包含基板110、薄膜電晶體陣列120、光吸收層140及發光組件190。其中,發光組件190包括第一電極層150、有機層160及第二電極層170。整體來講,薄膜電晶體陣列120、光吸收層140、第一電極層150、有機層160、第二電極層 170及封裝板180是依序堆疊於基板110上。 As shown in FIG. 4, the organic light emitting diode display device 400 includes a substrate 110, a thin film transistor array 120, a light absorption layer 140, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the light absorption layer 140, the first electrode layer 150, the organic layer 160, and the second electrode layer 170 and the package board 180 are sequentially stacked on the substrate 110.
本實施例的有機發光二極體顯示裝置400相較於第1A圖的有機發光二極體顯示裝置100的不同之處在於,本實施例的有機發光二極體顯示裝置400省去電性絕緣層125及平坦層130的結構設計,而是直接利用光吸收層140來作為電性隔離第一電極層150與薄膜電晶體陣列120的絕緣層,並且用來平坦化薄膜電晶體陣列120的表面。 The organic light emitting diode display device 400 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 400 of this embodiment omits electrical insulation. The structural design of the layer 125 and the flat layer 130 directly utilizes the light absorbing layer 140 as an insulating layer that electrically isolates the first electrode layer 150 from the thin film transistor array 120 and is used to planarize the surface of the thin film transistor array 120 .
具體而言,光吸收層140是由絕緣材質所形成,同時具有光學吸收、電性隔絕及平坦化的效果。換句話說,光吸收層140同時取代了平坦層130及電性絕緣層125。於此情況下,本實施例的光吸收層140開設有複數個通孔(圖未繪示),並且通孔中填充有導電材料,使第一電極層150與薄膜電晶體陣列120通過通孔中的導電材料來電性連接。如此一來,更可進一步地減少有機發光二極體顯示裝置400的厚度及重量。 Specifically, the light absorbing layer 140 is formed of an insulating material, and has the effects of optical absorption, electrical isolation, and planarization. In other words, the light absorbing layer 140 replaces the flat layer 130 and the electrical insulating layer 125 at the same time. In this case, the light absorption layer 140 of this embodiment is provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 pass through the through holes. Electrically conductive material in the connection. In this way, the thickness and weight of the organic light emitting diode display device 400 can be further reduced.
在另一實施方式中,本實施例的有機發光二極體顯示裝置400更可進一步設計包含有前述第2圖實施例的有機發光二極體顯示裝置200中的彩色濾光層175。其中有關彩色濾光層175的疊層位置及相關功能就不在此加以贅述。 In another embodiment, the organic light emitting diode display device 400 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.
再次說明的是,上述第2圖至第4圖實施例中的光吸收層140的相對位置關係大致是與第1A圖實施例相同,都是設置在薄膜電晶體陣列120與第一電極層150之間。如此一來,光吸收層140可作為薄膜電晶體陣列120的 遮光層,避免薄膜電晶體陣列120在照射到強烈的外界光源111的光線之後產生光電流效應的缺陷,具有保護薄膜電晶體陣列120的效果。此外,由於光吸收層140為一完整平面的設計態樣,因此可同時覆蓋薄膜電晶體陣列120的金屬導電線路(圖未示),以避免金屬導電線路的反光以及減少其他外觀問題的產生。 It is explained again that the relative positional relationship of the light absorbing layer 140 in the embodiments of FIGS. 2 to 4 is approximately the same as that of the embodiment of FIG. 1A, and they are provided in the thin film transistor array 120 and the first electrode layer 150. between. In this way, the light absorbing layer 140 can be used as a thin film transistor array 120 The light-shielding layer avoids the defect that the thin-film transistor array 120 generates a photocurrent effect after irradiating the light from the strong external light source 111, and has the effect of protecting the thin-film transistor array 120. In addition, since the light absorbing layer 140 is a complete planar design, it can cover the metal conductive circuits (not shown) of the thin film transistor array 120 at the same time to avoid reflection of the metal conductive circuits and reduce other appearance problems.
請參照第5圖,第5圖為根據本發明的一實施例繪示一種有機發光二極體顯示裝置500的示意圖。由於本實施例的有機發光二極體顯示裝置500與前述第1A圖實施例的有機發光二極體顯示裝置100近似,以下將僅描述二者之間的差異。 Please refer to FIG. 5, which is a schematic diagram illustrating an organic light emitting diode display device 500 according to an embodiment of the present invention. Since the organic light emitting diode display device 500 of this embodiment is similar to the organic light emitting diode display device 100 of the aforementioned embodiment in FIG. 1A, only the differences between the two will be described below.
如第5圖所示,有機發光二極體顯示裝置500包含具光吸收功能的基板115、薄膜電晶體陣列120、電性絕緣層125、平坦層130及發光組件190。其中,發光組件190包括第一電極層150、有機層160及第二電極層170。整體來講,薄膜電晶體陣列120、電性絕緣層125、平坦層130、第一電極層150、有機層160、第二電極層170及封裝板180是依序堆疊於具光吸收功能的基板115上。 As shown in FIG. 5, the organic light emitting diode display device 500 includes a substrate 115 having a light absorption function, a thin film transistor array 120, an electrical insulating layer 125, a flat layer 130, and a light emitting element 190. The light emitting device 190 includes a first electrode layer 150, an organic layer 160, and a second electrode layer 170. Generally speaking, the thin film transistor array 120, the electrically insulating layer 125, the flat layer 130, the first electrode layer 150, the organic layer 160, the second electrode layer 170, and the packaging plate 180 are sequentially stacked on a substrate having a light absorption function. 115 on.
本實施例的有機發光二極體顯示裝置500相較於第1A圖的有機發光二極體顯示裝置100的不同之處在於,本實施例的有機發光二極體顯示裝置500省去光吸收層140的結構設計,而是以具光吸收功能的基板115來取代第1A圖的有機發光二極體顯示裝置100中的基板110。 The organic light emitting diode display device 500 of this embodiment is different from the organic light emitting diode display device 100 of FIG. 1A in that the organic light emitting diode display device 500 of this embodiment omits a light absorption layer. The structural design of 140 is to replace the substrate 110 in the organic light emitting diode display device 100 of FIG. 1A with a substrate 115 having a light absorption function.
於本實施例中,具光吸收功能的基板115在製 作上,可例如是在一基材上塗佈或增設一層與第1A圖的有機發光二極體顯示裝置100的光吸收層140相同材質的薄膜或塗層來製成,或者是直接在基材的生產中直接添加可吸收光的材質來製成,在此並非本實施例所限制。具體而言,本實施例的具光吸收功能的基板115的光學吸收效果大致與第1A圖的有機發光二極體顯示裝置100的光吸收層140的效果相同。如此一來,外界光源111射入有機發光二極體顯示裝置500,並逐層到達具光吸收功能的基板115時會全部被吸收,而不會產生反射,同樣可以達到提高顯示上的明暗對比的效果。 In this embodiment, a substrate 115 having a light absorption function is being manufactured. For example, it can be made by coating or adding a thin film or coating of the same material as the light absorption layer 140 of the organic light emitting diode display device 100 of FIG. 1A on a substrate, or directly on the substrate. It is made by directly adding a material that can absorb light in the production of the material, which is not limited in this embodiment. Specifically, the optical absorption effect of the substrate 115 with a light absorption function in this embodiment is substantially the same as the effect of the light absorption layer 140 of the organic light emitting diode display device 100 of FIG. 1A. In this way, the external light source 111 enters the organic light emitting diode display device 500, and when it reaches the substrate 115 having the light absorption function layer by layer, it will be completely absorbed without reflection, and the brightness and dark contrast on the display can also be improved. Effect.
進一步說明的是,本實施例的電性絕緣層125及平坦層130是設置於第一電極層150及薄膜電晶體陣列120之間,並構成一複合疊層結構的關係。所述複合疊層結構更開設有複數個通孔(圖未繪示),並且通孔中填充有導電材料,使第一電極層150與薄膜電晶體陣列120通過通孔中的導電材料來電性連接。 It is further explained that the electrical insulating layer 125 and the flat layer 130 in this embodiment are disposed between the first electrode layer 150 and the thin-film transistor array 120 and form a composite stacked structure. The composite laminated structure is further provided with a plurality of through holes (not shown), and the through holes are filled with a conductive material, so that the first electrode layer 150 and the thin film transistor array 120 are electrically conductive through the conductive material in the through holes. connection.
在另一實施方式中,本實施例的有機發光二極體顯示裝置500更可進一步設計包含有前述第2圖實施例的有機發光二極體顯示裝置200中的彩色濾光層175。其中有關彩色濾光層175的疊層位置及相關功能就不在此加以贅述。 In another embodiment, the organic light emitting diode display device 500 of this embodiment may further include a color filter layer 175 included in the organic light emitting diode display device 200 of the embodiment shown in FIG. 2. The stacking position and related functions of the color filter layer 175 are not described in detail here.
由上述實施例的說明可知,本發明是以高穿透率及低反射率的導電材質作為第一電極層及第二電極層,再以光吸收層減少外界光源的反射,減少添加額外光學膜片組 的必要。據此,有機發光二極體可具有更佳的自發光的效率,且更可減輕有機發光二極體本身的厚度及重量。此外,光吸收層或具光吸收功能的基板更可提供阻絕水氧穿透的功能,當考量發光二極體顯示裝置整體的重量、厚度,甚至是未來可撓式的應用時,光吸收層或具光吸收功能的基板可以彌補因使用塑膠基板所導致的密封效果較差的問題,以提升阻絕水氧穿透的能力,進而提高發光二極體顯示裝置的壽命。 It can be known from the description of the foregoing embodiments that the present invention uses a conductive material with high transmittance and low reflectance as the first electrode layer and the second electrode layer, and then uses a light absorption layer to reduce the reflection of external light sources and reduce the addition of additional optical films. Film group Necessary. Accordingly, the organic light emitting diode can have better self-luminous efficiency, and can further reduce the thickness and weight of the organic light emitting diode itself. In addition, a light-absorbing layer or a substrate with a light-absorbing function can provide a function of blocking water and oxygen penetration. When considering the overall weight and thickness of the light-emitting diode display device, and even future flexible applications, the light-absorbing layer Or the substrate with light absorption function can make up for the problem of poor sealing effect caused by the use of a plastic substrate, so as to improve the ability to prevent water and oxygen from penetrating, thereby increasing the life of the light emitting diode display device.
雖然本案已以實施例揭露如上,然其並非用以限定本案,任何熟習此技藝者,在不脫離本案之精神和範圍內,當可作各種之更動與潤飾,因此本案之保護範圍當視後附之申請專利範圍所界定者為準。 Although this case has been disclosed as above with examples, it is not intended to limit this case. Any person skilled in this art can make various modifications and retouches without departing from the spirit and scope of this case. Therefore, the scope of protection of this case should be considered after The attached application patent shall prevail.
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CN105552249A (en) * | 2016-03-16 | 2016-05-04 | 京东方科技集团股份有限公司 | OLED display substrate, manufacturing method thereof and display device |
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Also Published As
Publication number | Publication date |
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CN108630724A (en) | 2018-10-09 |
TW201836188A (en) | 2018-10-01 |
TWM545364U (en) | 2017-07-11 |
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