TWI632040B - Apparatus and method for breaking brittle substrate - Google Patents
Apparatus and method for breaking brittle substrate Download PDFInfo
- Publication number
- TWI632040B TWI632040B TW106123111A TW106123111A TWI632040B TW I632040 B TWI632040 B TW I632040B TW 106123111 A TW106123111 A TW 106123111A TW 106123111 A TW106123111 A TW 106123111A TW I632040 B TWI632040 B TW I632040B
- Authority
- TW
- Taiwan
- Prior art keywords
- material substrate
- brittle material
- cutting
- platform
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
本發明揭露一種脆性材料基板裂片裝置,其特徵在於利用一預切 割裝置在該脆性材料基板上之一預定處形成一深度小於該脆性材料基板厚度的預切割道,然後再利用一線型裂片裝置朝該脆性材料基板的表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板,採用本發明裂片,可提高脆性材料基板的利用率。 The invention discloses a brittle material substrate chipping device, which is characterized by using a pre-cut The cutting device forms a pre-cut track with a depth less than the thickness of the brittle material substrate at a predetermined position on the brittle material substrate, and then uses a linear split device to move toward the surface of the brittle material substrate, so that the brittle material substrate is in the linear shape. When the slicing device contacts the pre-cutting path, the tension sliver of the linear slicing device is used to form a sub-fragile material substrate with a smaller area. Using the sliver of the present invention can improve the utilization rate of the brittle material substrate.
Description
本發明是關於一種脆性材料基板裂片裝置及使用該裝置之裂片方法。 The invention relates to a fragile material substrate chipping device and a chipping method using the same.
目前,半導體業以及面板業,在相關製程完成後,必須進一步經由切割、裂片程序,才能將基板裂片成面積更小的次基板。其中,常見的裂片手段是先在基板上形成一預切割道,然後再利用撞擊耳料區或自預切割道之正面或背面施以瞬間應力,使原本的基板裂片成面積更小的此基板。惟,這些裂片製程均遭遇耳料浪費、切割邊緣不平整、甚至汙染基板上之元件等缺點。有鑑於此,業界乃殷切期盼開發一種適用於半導體業或面板業的裂片裝置以及利用該裂片裝置的裂片方法,以改善目前的裂片裝置以及利用該裂片裝置的裂片方法所面臨的缺點。 At present, after the semiconductor industry and the panel industry are completed, the substrate must be split into smaller substrates with a smaller area after further cutting and splitting procedures. Among them, the common method of splitting is to first form a pre-cut lane on the substrate, and then use the impact ear area or apply instant stress from the front or back of the pre-cut lane to make the original substrate split into a smaller area. . However, these sliver processes suffer from wasted ear material, uneven cutting edges, and even contamination of components on the substrate. In view of this, the industry is eagerly looking forward to developing a chip device suitable for the semiconductor industry or the panel industry and a chip method using the chip device to improve the shortcomings of the current chip device and the chip method using the chip device.
有鑑於此,本發明揭露一種脆性材料基板裂片裝置,其特徵在於利用一預切割裝置在該脆性材料基板上之一預定處形成一深度小於該脆性材料基板厚度的預切割道,然後再利用一線型裂片裝置朝該脆性材料基板的表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板,採用本發明裂片,可提高脆性材料基板的利用率。 In view of this, the present invention discloses a brittle material substrate chipping device, which is characterized in that a pre-cut device is used to form a pre-cut track at a predetermined position on the brittle material substrate at a depth less than the thickness of the brittle material substrate, and then a line is used. The type split device moves toward the surface of the brittle material substrate, so that when the linear split device contacts the pre-cut lane, the tension of the linear split device is used to split the substrate into a less brittle material substrate with a smaller area. The invention of the split sheet can improve the utilization rate of the brittle material substrate.
本發明之一特徵是揭露一種脆性材料基板裂片裝置,包括:一平台,用以承載一具有相對上、下表面之脆性材料基板,該平台上包括有複數個突出結構,且該脆性材料基板是藉由該下表面被放置於該平台上之該等突出結構上;一預切割裝置,設置於該平台之上方,且該預切割裝置可在該脆性材料基板之該上表面之一預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及一線型裂片裝置,設置於該平台之上方,且該線型裂片裝置在對準該預切割道後,可朝該脆性材料基板之該上表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 One feature of the present invention is to disclose a fragile material substrate chip device, comprising: a platform for carrying a fragile material substrate having opposite upper and lower surfaces, the platform including a plurality of protruding structures, and the fragile material substrate is The lower surface is placed on the protruding structures on the platform; a pre-cutting device is disposed above the platform, and the pre-cutting device can be performed at a predetermined position on the upper surface of the brittle material substrate Pre-cut and form a pre-cut track with a depth less than the thickness of the brittle material substrate; and a linear split device arranged above the platform, and the linear split device can be directed toward the brittle material substrate after being aligned with the pre-cut lane The movement of the upper surface causes the brittle material substrate to be split into a less brittle material substrate with a smaller area by the tension of the linear split device when the linear split device contacts the pre-cut lane.
本發明之另一特徵是揭露另一種脆性材料基板裂片裝置,包括:一載體,用以承載一具有相對上、下表面之脆性材料基板,該載體包括一第一平台與一第二平台與一連結該第一平台與該第二平台的連結結構,該第一平台與該第二平台之間具有一第一間隔,且該第一平台與該第二平台係位在同一水平面,其中該第一平台與該第二平台上均包括有複數個突出結構,且該脆性材料基板是藉由該下表面被放置於該第一平台與第二平台上之該等突出結構上;一預切割裝置,設置於該載體之上方,且該預切割裝置可在該脆性材料基板之該上表面之一對準於該第一間隔處之預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及一線型裂片裝置,設置於該載體之該第一間隔處之上方,且該線型裂片裝置在對準該預切割道後,可朝該脆性材料基板之該上表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose another fragile material substrate chipping device, including: a carrier for carrying a fragile material substrate having opposite upper and lower surfaces, the carrier including a first platform and a second platform and a A connecting structure connecting the first platform and the second platform, the first platform and the second platform have a first gap therebetween, and the first platform and the second platform are located at the same horizontal plane, wherein the first A platform and the second platform each include a plurality of protruding structures, and the brittle material substrate is placed on the protruding structures on the first platform and the second platform through the lower surface; a pre-cut device Is disposed above the carrier, and the pre-cut device can pre-cut at one of the upper surfaces of the brittle material substrate at a predetermined position at the first interval, and form a depth smaller than the thickness of the brittle material substrate A pre-cut line; and a linear sliver device disposed above the first interval of the carrier, and the linear sliver device can be directed toward the brittle material after being aligned with the pre-cut line. The upper surface of the moving plate, the brittle material substrate so that the line segments to the pre-contacting means when scribe line segments by means of the tension of the lobes having an area of less times brittle material substrate.
本發明之另一特徵是揭露另一種脆性材料基板裂片裝置,包括:一載體,用以承載一具有相對上、下表面之脆性材料基板,該載體包括一第一平台與一第二平台與一連結該第一平台與該第二平台的連結結構,該第一平台與該第二平台之間具有一第一間隔,且該第一平台與該第二平台係位在同一水平面,其中該第一平台與該第二平台上均包括有複數個突出結構,且該脆性材料基板是藉由該下表面被放置於該第一平台與第二平台上之該等突出結構上;一預切割裝置,設置於該載體之上方,且該預切割裝置可在該脆性材料基板之該上表面之一對準於該第一間隔處之預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及一線型裂片裝置,可上、下移動地被設置於對準該載體之該第一間隔下方處之該連結結構上,且在該預切割道與該線型裂片裝置對準後,該線型裂片裝置往上朝該脆性材料基板之該下表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose another fragile material substrate chipping device, including: a carrier for carrying a fragile material substrate having opposite upper and lower surfaces, the carrier including a first platform and a second platform and a A connecting structure connecting the first platform and the second platform, the first platform and the second platform have a first gap therebetween, and the first platform and the second platform are located at the same horizontal plane, wherein the first A platform and the second platform each include a plurality of protruding structures, and the brittle material substrate is placed on the protruding structures on the first platform and the second platform through the lower surface; a pre-cut device Is disposed above the carrier, and the pre-cut device can pre-cut at one of the upper surfaces of the brittle material substrate at a predetermined position at the first interval, and form a depth smaller than the thickness of the brittle material substrate A pre-cutting path; and a linear lobing device, which can be moved up and down on the connecting structure aligned below the first interval of the carrier, and between the pre-cutting path and the After the linear split device is aligned, the linear split device moves upward toward the lower surface of the brittle material substrate, so that the brittle material substrate is stretched by the tension of the linear split device when the linear split device contacts the pre-cut lane. Sub-brittle material substrate with smaller area.
本發明之另一特徵是揭露另一種脆性材料基板裂片裝置,包括:一輸送系統,用以輸送一具有相對上、下表面之脆性材料基板,該輸送系統包括複數個彼此平行沿第一方向延伸排列的滾桶,且相鄰的該等滾桶間具有一第二間隔;一預切割裝置,設置於該輸送系統之上方,且該預切割裝置可在該脆性材料基板之該上表面之一預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及一線型裂片裝置,設置於該輸送系統的其中一該第二間隔處的上方或下方,且在該脆性材料基板上之該預切割道位在該第二間隔時,該線型裂片裝置對準於該預切割道後,朝該脆性材料基板之該上表面或該下表面運動,使該脆性材料基板在 該線型裂片裝置接觸到該預切割道後,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose another fragile material substrate chipping device, including: a conveying system for conveying a fragile material substrate with opposite upper and lower surfaces, the conveying system comprising a plurality of parallel extending along the first direction Aligned rollers with a second interval between adjacent rollers; a pre-cut device is placed above the conveying system, and the pre-cut device can be on one of the upper surfaces of the brittle material substrate Pre-cutting at a predetermined position, and forming a pre-cutting path with a depth less than the thickness of the brittle material substrate; and a linear sliver device, which is arranged above or below one of the second intervals of the conveying system, and at the brittle material When the pre-cut track on the substrate is at the second interval, after the linear split device is aligned with the pre-cut track, it moves toward the upper surface or the lower surface of the brittle material substrate, so that the brittle material substrate After the linear splitting device contacts the pre-cut lane, the linear splitting device is used to rupture the substrate into a less brittle material substrate with a smaller area by the tension of the linear splitting device.
本發明之另一特徵是揭露另一種脆性材料基板裂片裝置,包括:一輸送系統,用以輸送一具有相對上、下表面之脆性材料基板,該輸送系統包括一第一輸送機構與一第二輸送機構,且該第一、第二輸送機構之間具有一第三間隔;一預切割裝置,設置於該輸送系統上方,且該預切割裝置可在該脆性材料基板之該上表面之一預定位置上進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及一線型裂片裝置,設置於該第一輸送機構與該第二輸送機構之間的該第三間隔處的上方或下方,在該脆性材料基板跨越於該第一輸送機構與該第二輸送機構之間且該預切割道位在該第一、第二輸送機構之間的該第三間隔處時,該線型裂片裝置對準於該預切割道後,朝該脆性材料基板之該上表面或下表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道後,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose another fragile material substrate chipping device, including: a conveying system for conveying a fragile material substrate having opposite upper and lower surfaces, the conveying system including a first conveying mechanism and a second A conveying mechanism with a third interval between the first and second conveying mechanisms; a pre-cutting device disposed above the conveying system, and the pre-cutting device may be predetermined on one of the upper surfaces of the brittle material substrate Pre-cut at a position, and a pre-cutting path having a depth smaller than the thickness of the brittle material substrate is formed; and a linear split device is disposed above the third interval between the first conveying mechanism and the second conveying mechanism Or below, when the brittle material substrate spans between the first conveying mechanism and the second conveying mechanism and the pre-cutting path is located at the third interval between the first and second conveying mechanisms, the line type After the split device is aligned with the pre-cutting track, it moves toward the upper surface or the lower surface of the brittle material substrate, so that the brittle material substrate is in contact with the linear split device. After the scribe line segments by means of the tension of the lobes having an area of less times brittle material substrate.
本發明之另一特徵是揭露一種如上所述之脆性材料基板裂片裝置,且該脆性材料基板為玻璃基板或半導體基板。 Another feature of the present invention is to disclose a brittle material substrate splitting device as described above, and the brittle material substrate is a glass substrate or a semiconductor substrate.
本發明之另一特徵是揭露一種如上所述之脆性材料基板裂片裝置,且該預切割裝置為一光學式預切割裝置或一機械式預切割裝置。 Another feature of the present invention is to disclose a brittle material substrate split device as described above, and the pre-cut device is an optical pre-cut device or a mechanical pre-cut device.
本發明之另一特徵是揭露一種如上所述之脆性材料基板裂片裝置,且該光學式預切割裝置為雷射切割機。 Another feature of the present invention is to disclose a brittle material substrate chipping device as described above, and the optical pre-cutting device is a laser cutter.
本發明之另一特徵是揭露一種如上所述之脆性材料基板裂片裝置,且該機械式預切割裝置為刀輪切割機或切割刀切割機。 Another feature of the present invention is to disclose a brittle material substrate chipping device as described above, and the mechanical pre-cutting device is a cutter wheel cutter or a cutter blade cutter.
本發明之另一特徵是揭露一種如上所述之脆性材料基板裂片裝置,且該線型裂片裝置為金屬線材、金屬複合線材或絕緣線材。 Another feature of the present invention is to disclose a brittle material substrate split device as described above, and the linear split device is a metal wire, a metal composite wire or an insulating wire.
本發明之另一特徵是揭露一種利用上述脆性材料基板裂片裝置之脆性材料基板之裂片方法,其步驟包括:提供一如段落[0004]所述之脆性材料基板裂片裝置;提供一具有相對上、下表面之脆性材料基板,並使該脆性材料基板藉由該下表面被放置於該平台上之該等突出結構上;利用該脆性材料基板裂片裝置中之該預切割裝置在該脆性材料基板之該上表面之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及將該脆性材料基板裂片裝置中之該線型裂片裝置移動至對準於該預切割道之上方,然後朝該脆性材料基板上表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose a brittle material substrate chipping method using the brittle material substrate chipping device described above. The steps include: providing a brittle material substrate chipping device as described in paragraph [0004]; The brittle material substrate on the lower surface, and the brittle material substrate is placed on the protruding structures on the platform through the lower surface; the pre-cut device in the brittle material substrate splitting device is used on the brittle material substrate Pre-cut at a predetermined position on the upper surface to form a pre-cut track having a depth less than the thickness of the brittle material substrate; and moving the linear split device in the brittle material substrate split device to be aligned with the pre-cut lane The brittle material substrate is moved upward and then towards the upper surface of the brittle material substrate, so that the brittle material substrate is ruptured by the tension of the linear sliver device into a sub-brittle material substrate with a smaller area when the linear sliver device contacts the pre-cut lane.
本發明之另一特徵是揭露一種利用上述脆性材料基板裂片裝置之脆性材料基板之裂片方法,其步驟包括:提供一如段落[0005]所述之脆性材料基板裂片裝置;提供一具有相對上、下表面之脆性材料基板,並使該脆性材料基板藉由該下表面被放置於該第一平台與第二平台上之該等突出結構上;利用該脆性材料基板裂片裝置中之該預切割裝置在該脆性材料基板之該上表面之一對準於該第一間隔處之預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及使該脆性材料基板裂片裝置中之該線型裂片裝置移動至對準於該預切割道之上方,然後朝該脆性材料基板上表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose a fragile material substrate fracturing method using the fragile material substrate fracturing device described above. The steps include: providing a fragile material substrate fracturing device as described in paragraph [0005]; A brittle material substrate on the lower surface, and the brittle material substrate is placed on the protruding structures on the first platform and the second platform through the lower surface; using the pre-cut device in the brittle material substrate splitting device Pre-cutting is performed on one of the upper surfaces of the brittle material substrate at a predetermined position at the first interval, and a pre-cutting track having a depth less than the thickness of the brittle material substrate is formed; The linear split device is moved to be aligned above the pre-cut lane, and then moved toward the upper surface of the brittle material substrate, so that the brittle material substrate is contacted by the linear split device when the linear split device contacts the pre-cut lane. The tension lobes form a substrate of less brittle material with a smaller area.
本發明之另一特徵是揭露一種利用上述脆性材料基板裂片裝置之脆性材料基板之裂片方法,其步驟包括:提供一如段落[0006]所述之脆性材料基板裂片裝置;提供一具有相對上、下表面之脆性材料基板,並使該脆性材料基板藉由該下表面被放置於該第一平台與第二平台上之該等突 出結構上;利用該脆性材料基板裂片裝置中之該預切割裝置在該脆性材料基板之該上表面之一對準於該第一間隔處之預定位置進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及使該預切割道與該脆性材料基板裂片裝置中之該線型裂片裝置對準,然後使該線型裂片裝置往上朝該脆性材料基板下表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose a fragile material substrate fracturing method using the fragile material substrate fracturing device described above. The steps include: providing a fragile material substrate fracturing device as described in paragraph [0006]; A brittle material substrate on the lower surface, and the brittle material substrate is placed on the first platform and the second platform through the lower surface. Out of the structure; using the pre-cutting device in the brittle material substrate split device to pre-cut at one of the upper surfaces of the brittle material substrate at a predetermined position at the first interval, and forming a depth less than the brittleness A pre-cut path for the thickness of the material substrate; and aligning the pre-cut path with the linear split device in the brittle material substrate split device, and then moving the linear split device upward toward the lower surface of the brittle material substrate to make the brittleness When the linear sliver device contacts the pre-cut lane, the material substrate is ruptured by the tension of the linear sliver device into a less brittle material substrate with a smaller area.
本發明之另一特徵是揭露一種利用上述脆性材料基板裂片裝置之脆性材料基板之裂片方法,其步驟包括:提供一如段落[0007]所述之脆性材料基板裂片裝置;提供一具有相對上、下表面之脆性材料基板,並將該脆性材料基板放置於該輸送系統上;利用該脆性材料基板裂片裝置中之該預切割裝置在該脆性材料基板之該上表面的一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及利用該輸送系統輸送該脆性材料基板,使該預切割道對準於其中一該第二間隔;使該脆性材料基板裂片裝置中之該線型裂片裝置對準該預切割道後,朝該脆性材料基板之該上表面或下表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose a fragile material substrate fracturing method using the fragile material substrate fracturing device described above. The steps include: providing a fragile material substrate fracturing device as described in paragraph [0007]; providing a fragile material substrate fracturing device; A brittle material substrate on the lower surface, and placing the brittle material substrate on the conveying system; using the pre-cutting device in the brittle material substrate splitting device to pre-cut at a predetermined place on the upper surface of the brittle material substrate, And forming a pre-cut track with a depth less than the thickness of the brittle material substrate; and using the conveying system to transport the brittle material substrate so that the pre-cut track is aligned with one of the second intervals; After the linear split device is aligned with the pre-cutting path, the linear split device is moved toward the upper or lower surface of the brittle material substrate, so that the brittle material substrate is tensioned by the linear split device when the linear split device contacts the pre-cut line. The splits form a substrate of less brittle material with a smaller area.
本發明之另一特徵是揭露一種利用上述脆性材料基板裂片裝置之脆性材料基板之裂片方法,其步驟包括:提供一如段落[0008]所述之脆性材料基板裂片裝置;提供一具有相對上、下表面之脆性材料基板,並將該脆性材料基板放置於該輸送系統之該第一輸送機構上;利用該脆性材料基板裂片裝置中之該預切割裝置在該脆性材料基板之該上表面的一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道;以及利用該第一、第二輸送機構輸送該脆性材料基板,使其跨越於該第一輸送機 構與該第二輸送機構之間,並使該預切割道對準於該第一、第二輸送機構之間的該第三間隔;使該脆性材料基板裂片裝置中之該線型裂片裝置對準該預切割道後,朝該脆性材料基板之該上表面或該下表面運動,使該脆性材料基板在該線型裂片裝置接觸到該預切割道時,被該線型裂片裝置之張力裂片成面積更小的次脆性材料基板。 Another feature of the present invention is to disclose a fragile material substrate fracturing method using the fragile material substrate fracturing device described above. The steps include: providing a fragile material substrate fracturing device as described in paragraph [0008]; The brittle material substrate on the lower surface, and the brittle material substrate is placed on the first transport mechanism of the transport system; a pre-cut device in the brittle material substrate splitting device is used on a portion of the upper surface of the brittle material substrate. Pre-cutting at a predetermined place, and forming a pre-cutting path with a depth less than the thickness of the brittle material substrate; and using the first and second conveying mechanisms to transport the brittle material substrate so that it crosses the first conveyor Between the structure and the second conveying mechanism, and aligning the pre-cut lane with the third interval between the first and second conveying mechanisms; aligning the linear sliver device in the brittle material substrate sliver device After the pre-cutting track, move toward the upper surface or the lower surface of the brittle material substrate, so that the brittle material substrate is made smaller by the tension of the linear splitting device when the linear splitting device contacts the pre-cutting slot. Sub-brittle material substrate.
本發明之另一特徵是揭露一種如上所述之脆性材料基板之裂片方法,且該脆性材料基板為玻璃基板或半導體基板。 Another feature of the present invention is to disclose a method for splitting a brittle material substrate as described above, and the brittle material substrate is a glass substrate or a semiconductor substrate.
本發明之另一特徵是揭露一種如上所述之脆性材料基板之裂片方法,且該預切割裝置為一光學式預切割裝置或一機械式預切割裝置。 Another feature of the present invention is to disclose a method for splitting a brittle material substrate as described above, and the pre-cut device is an optical pre-cut device or a mechanical pre-cut device.
本發明之另一特徵是揭露一種如上所述之脆性材料基板之裂片方法,且該光學式預切割裝置為雷射切割機。 Another feature of the present invention is to disclose a method for splitting a brittle material substrate as described above, and the optical pre-cutting device is a laser cutter.
本發明之另一特徵是揭露一種如上所述之脆性材料基板之裂片方法,且該機械式預切割裝置為刀輪切割機或切割刀切割機。 Another feature of the present invention is to disclose a method for splitting a brittle material substrate as described above, and the mechanical pre-cutting device is a cutter wheel cutter or a cutter blade cutter.
本發明之另一特徵是揭露一種如上所述之脆性材料基板之裂片方法,且該線型裂片裝置為金屬線材、金屬複合線材或絕緣線材。 Another feature of the present invention is to disclose a chipping method for a brittle material substrate as described above, and the linear chipping device is a metal wire, a metal composite wire or an insulating wire.
10、20、30、40、50、60、70‧‧‧脆性材料基板裂片裝置 10, 20, 30, 40, 50, 60, 70‧‧‧ Brittle material substrate split device
100‧‧‧平台 100‧‧‧platform
100A、121A、122A‧‧‧正面 100A, 121A, 122A‧‧‧ Front
121‧‧‧第一平台 121‧‧‧First Platform
122‧‧‧第二平台 122‧‧‧Second Platform
123‧‧‧連結結構 123‧‧‧link structure
124‧‧‧第一間隔 124‧‧‧ the first interval
125‧‧‧載體 125‧‧‧ carrier
150‧‧‧突出結構 150‧‧‧ protruding structure
200‧‧‧脆性材料基板 200‧‧‧ Brittle material substrate
200A、200B‧‧‧次脆性材料基板 200A, 200B ‧‧‧ times brittle material substrate
201‧‧‧上表面 201‧‧‧ Top surface
202‧‧‧下表面 202‧‧‧ lower surface
250‧‧‧預切割裝置 250‧‧‧ pre-cut device
300‧‧‧線型裂片裝置 300‧‧‧Linear Split Device
350‧‧‧傳動機構 350‧‧‧ Transmission mechanism
370、380‧‧‧輸送系統 370, 380‧‧‧ Conveying System
375‧‧‧滾筒 375‧‧‧Roller
378‧‧‧第二間隔 378‧‧‧Second interval
380A‧‧‧第一輸送機構 380A‧‧‧The first conveying mechanism
380B‧‧‧第二輸送機構 380B‧‧‧Second conveying mechanism
383A‧‧‧第一輸送帶 383A‧‧‧The first conveyor belt
383B‧‧‧第二輸送帶 383B‧‧‧Second conveyor belt
384A‧‧‧第一滾輪 384A‧‧‧The first roller
384B‧‧‧第二滾輪 384B‧‧‧Second Roller
388‧‧‧第三間隔 388‧‧‧third interval
SL‧‧‧預切割道 SL‧‧‧Pre-cut
第1A~1D圖繪示的是根據本發明第一實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 1A to 1D are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the device according to the first embodiment of the present invention.
第2A~2D圖繪示的是根據本發明第二實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 Figures 2A to 2D are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the same according to a second embodiment of the present invention.
第3A~3E圖繪示的是根據本發明第三實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 3A to 3E are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the device according to a third embodiment of the present invention.
第4A~4D圖繪示的是根據本發明第四實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 Figures 4A to 4D are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the device according to a fourth embodiment of the present invention.
第5A~5D圖繪示的是根據本發明第五實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 5A to 5D are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the device according to a fifth embodiment of the present invention.
第6A~6D圖繪示的是根據本發明第六實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 6A to 6D are partial schematic diagrams of a brittle material substrate chipping device and a chipping method using the same according to a sixth embodiment of the present invention.
第7A~7D圖繪示的是根據本發明第七實施例所揭示的脆性材料基板裂片裝置的部分示意圖及使用該裝置之裂片方法。 7A to 7D are partial schematic diagrams of a brittle material substrate split device and a split method using the device according to a seventh embodiment of the present invention.
為使本發明之發明特徵、內容與優點及其所能達成之功效更易瞭解,茲將本發明配合附圖,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的權利範圍,合先敘明。 In order to make the features, contents, and advantages of the present invention and the effects that can be achieved easier to understand, the present invention is described in detail in conjunction with the accompanying drawings in the form of embodiments, and the schematics used therein are the main purpose It is only for the purpose of illustration and supplementary description. It may not be the actual proportion and precise configuration after the implementation of the invention. Therefore, the relationship between the proportion and configuration of the attached drawings should not be interpreted and limited to the scope of rights of the present invention in actual implementation. Let me explain first.
以下將參照相關圖式,說明依本發明之脆性材料基板切割裂片裝置及使用該裝置之方法之實施例,為使便於理解,下述實施例中之相同元件係以相同之符號標示來說明。 Hereinafter, embodiments of the brittle material substrate cutting split device and the method using the same according to the present invention will be described with reference to related drawings. In order to facilitate understanding, the same elements in the following embodiments are described with the same symbols.
實施例一 Example one
首先,請參閱第1A圖,其所顯示的是一種脆性材料基板裂片裝置10的部分示意圖,其包括一平台100、一預切割裝置250及一如第1B~1C圖所示的線型裂片裝置300。其中,平台100係用以承載一具有上表面201與下表面202的脆性材料基板200,該平台100具有一正面100A及一 與該正面100A相對的背面(未標示),且該正面100A上包括有複數個突出結構150,其中該脆性材料基板200是藉由其下表面202被放置於該平台100上之該等突出結構150上。 First, please refer to FIG. 1A, which shows a partial schematic diagram of a brittle material substrate chipping device 10, which includes a platform 100, a pre-cutting device 250, and a linear chipping device 300 as shown in FIGS. 1B to 1C. . The platform 100 is used to carry a brittle material substrate 200 having an upper surface 201 and a lower surface 202. The platform 100 has a front surface 100A and a A back surface (not labeled) opposite to the front surface 100A, and the front surface 100A includes a plurality of protruding structures 150, wherein the brittle material substrate 200 is the protruding structures placed on the platform 100 through its lower surface 202. 150 on.
本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。此外,本實施例上述該等突出結構150,其突出於平台100之正面100A的高度介於1~5公分之間,惟上述該等突出結構150之高度可視需要加以調整,上述之高度範圍僅用以例示說明,並非用以限制本發明之專利範圍。 The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc. In addition, in this embodiment, the height of the protruding structures 150 above the front side 100A of the platform 100 is between 1 and 5 cm. However, the heights of the protruding structures 150 may be adjusted as needed. The above-mentioned height range is only It is used for illustration and explanation and is not intended to limit the patent scope of the present invention.
其次,請繼續參閱第1A圖,利用此脆性材料基板裂片裝置10中之預切割裝置250在該脆性材料基板200之上表面201之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Secondly, please continue to refer to FIG. 1A, using a pre-cutting device 250 in the brittle material substrate chipping device 10 to pre-cut at a predetermined position on an upper surface 201 of the brittle material substrate 200, and form a depth less than the brittle material substrate Thick pre-cut (SL). In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第1B~1D圖,先將此脆性材料基板裂片裝置10中之線型裂片裝置300如第1B圖所示般移動至預切割道(SL)之上方,在本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其 可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而上、下運動。 待線型裂片裝置300對準該預切割道(SL)後,如第1C圖所示般利用傳動機構350帶動線型裂片裝置300向下,使線型裂片裝置300朝脆性材料基板200之上表面201運動,並使該脆性材料基板200在線型裂片裝置300接觸到預切割道(SL)時,被該線型裂片裝置300的張力裂片成如第1D圖所示之面積更小的次脆性材料基板200A、200B。 Next, referring to FIGS. 1B to 1D, first, the linear split device 300 in the brittle material substrate split device 10 is moved above the pre-cut line (SL) as shown in FIG. 1B. In this embodiment, this linear type The split device 300 is a metal wire, a metal composite wire or an insulated wire. The transmission mechanism 350 on both sides of the linear split device 300 can be driven to move up and down. After the linear split device 300 is aligned with the pre-cut line (SL), as shown in FIG. 1C, the linear split device 300 is driven downward by the transmission mechanism 350 to move the linear split device 300 toward the upper surface 201 of the brittle material substrate 200. When the brittle material substrate 200 is brought into contact with the pre-cut line (SL) of the linear sliver device 300, the tension of the linear sliver device 300 is used to form a sub-brittle material substrate 200A with a smaller area as shown in FIG. 1D. 200B.
實施例二 Example two
首先,請參閱第2A圖,其所顯示的是另一種脆性材料基板裂片裝置20的部分示意圖,其包括一載體125、一預切割裝置250以及一如第2A~2B圖所示的線型裂片裝置300。載體125係用以承載一具有相對上表面201及下表面202之脆性材料基板200,該載體125包括一第一平台121與一第二平台122與一連結該第一平台121與該第二平台122的連結結構123,該第一平台121與該第二平台122之間具有一第一間隔124,且該第一平台121與該第二平台122係位在同一水平面,其中該第一平台121與該第二平台122上均包括有複數個突出結構150,且該脆性材料基板200是藉由該下表面202被放置於該第一平台121與第二平台122上之該等突出結構150上。 First, please refer to FIG. 2A, which shows a partial schematic view of another brittle material substrate splitting device 20, which includes a carrier 125, a pre-cutting device 250, and a linear splitting device as shown in FIGS. 2A-2B. 300. The carrier 125 is used to carry a brittle material substrate 200 having an opposite upper surface 201 and a lower surface 202. The carrier 125 includes a first platform 121 and a second platform 122 and a connection between the first platform 121 and the second platform. The connection structure 123 of 122, the first platform 121 and the second platform 122 have a first gap 124 therebetween, and the first platform 121 and the second platform 122 are located on the same horizontal plane, wherein the first platform 121 The second platform 122 includes a plurality of protruding structures 150, and the brittle material substrate 200 is placed on the protruding structures 150 on the first platform 121 and the second platform 122 through the lower surface 202. .
本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。此外,本實施例上述該等突出結構150,其突出於平台100之正面100A的高度介於1~5公分之間,惟上述該等突出結構150之 高度可視需要加以調整,上述之高度範圍僅用以例示說明,並非用以限制本發明之專利範圍。 The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc. In addition, in the embodiment, the height of the protruding structures 150 protruding from the front 100A of the platform 100 is between 1 and 5 cm. The height can be adjusted as needed. The above-mentioned height range is only for illustration and not for limiting the patent scope of the present invention.
其次,請繼續參閱第2A圖,利用此脆性材料基板裂片裝置20中之預切割裝置250在該脆性材料基板200之上表面201之一對準於該第一間隔處之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Next, please continue to refer to FIG. 2A, using a pre-cutting device 250 in the brittle material substrate chipping device 20 to pre-cut one of the upper surfaces 201 of the brittle material substrate 200 at a predetermined position of the first space A pre-cut track (SL) having a depth less than the thickness of the brittle material substrate is formed. In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第2B~2D圖,先將此脆性材料基板裂片裝置20中之線型裂片裝置300如第2B圖所示般移動至預切割道(SL)之上方,在本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而上、下運動。 待線型裂片裝置300對準該預切割道(SL)後,如第2C圖所示般利用傳動機構350帶動線型裂片裝置300向下,使線型裂片裝置300朝脆性材料基板200之上表面201運動,並使該脆性材料基板200在線型裂片裝置300接觸到預切割道(SL)時,被該線型裂片裝置300的張力裂片成如第2D圖所示之面積更小的次脆性材料基板200A、200B。 Next, referring to FIGS. 2B to 2D, firstly, the linear split device 300 in the brittle material substrate split device 20 is moved above the pre-cut line (SL) as shown in FIG. 2B. In this embodiment, this linear type The sliver device 300 is a metal wire, a metal composite wire or an insulated wire, which can be driven up and down by the transmission mechanisms 350 located on both sides of the linear sliver device 300. After the linear split device 300 is aligned with the pre-cut line (SL), as shown in FIG. 2C, the linear split device 300 is driven downward by the transmission mechanism 350 to move the linear split device 300 toward the upper surface 201 of the brittle material substrate 200. When the brittle material substrate 200 is brought into contact with the pre-cut line (SL) of the linear sliver device 300, the tension of the linear sliver device 300 is used to form a sub-brittle material substrate 200A having a smaller area as shown in FIG. 2D. 200B.
實施例三 Example three
首先,請參閱第3A圖,其所顯示的是另一種脆性材料基板裂片裝置30的部分示意圖,其包括一載體125、一預切割裝置250以及一線型裂片裝置300。載體125係用以承載一具有相對上表面201及下表面202之脆性材料基板200,該載體125包括一第一平台121與一第二平台122與一連結該第一平台121與該第二平台122的連結結構123,該第一平台121與該第二平台122之間具有一第一間隔124,且該第一平台121與該第二平台122係位在同一水平面,其中該第一平台121與該第二平台122上均包括有複數個突出結構150,且該脆性材料基板200是藉由該下表面202被放置於該第一平台121與第二平台122上之該等突出結構150上。在本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,且此線型裂片裝置300是可上、下活動地被設置於對準於第一間隔124下方處之連結結構123上,可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而在第一間隔124上、下運動。此外,本實施例中之傳動機構350可藉由另一外部機構帶動(未顯示)或者藉由傳動機構350本身內部的設計(未顯示)而達到帶動線型裂片裝置300上、下運動之目的。 First, please refer to FIG. 3A, which shows a partial schematic view of another brittle material substrate splitting device 30, which includes a carrier 125, a pre-cutting device 250, and a linear splitting device 300. The carrier 125 is used to carry a brittle material substrate 200 having an opposite upper surface 201 and a lower surface 202. The carrier 125 includes a first platform 121 and a second platform 122 and a connection between the first platform 121 and the second platform. The connection structure 123 of 122, the first platform 121 and the second platform 122 have a first gap 124 therebetween, and the first platform 121 and the second platform 122 are located on the same horizontal plane, wherein the first platform 121 The second platform 122 includes a plurality of protruding structures 150, and the brittle material substrate 200 is placed on the protruding structures 150 on the first platform 121 and the second platform 122 through the lower surface 202. . In this embodiment, the linear sliver device 300 is a metal wire, a metal composite wire, or an insulated wire, and the linear sliver device 300 is a connection structure that can be movably arranged up and down and aligned below the first interval 124. On 123, the transmission mechanism 350 located on both sides of the linear split device 300 can be driven to move up and down in the first interval 124. In addition, the transmission mechanism 350 in this embodiment can be driven by another external mechanism (not shown) or by the internal design (not shown) of the transmission mechanism 350 itself to achieve the purpose of driving the linear split device 300 to move up and down.
然後,再如第3B圖所示般,使一脆性材料基板200被放置於該第一平台121與第二平台122上之該等突出結構150上。本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。此外,本實施例上述該等突出結構150,其突出於平台100之正面100A的高度介於 1~5公分之間,惟上述該等突出結構150之高度可視需要加以調整,上述之高度範圍僅用以例示說明,並非用以限制本發明之專利範圍。 Then, as shown in FIG. 3B, a brittle material substrate 200 is placed on the protruding structures 150 on the first platform 121 and the second platform 122. The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc. In addition, in the embodiment, the above protruding structures 150 have a height protruding from the front side 100A of the platform 100 between 1 ~ 5 cm, but the height of the above-mentioned protruding structures 150 can be adjusted according to need. The above-mentioned height range is only for illustration and is not intended to limit the patent scope of the present invention.
其次,請繼續參閱第3B圖,利用此脆性材料基板裂片裝置30中之預切割裝置250在該脆性材料基板200之上表面201之一對準於該第一間隔處之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Next, please continue to refer to FIG. 3B, using a pre-cutting device 250 in the brittle material substrate chipping device 30 to pre-cut one of the upper surface 201 of the brittle material substrate 200 at a predetermined position of the first space A pre-cut track (SL) having a depth less than the thickness of the brittle material substrate is formed. In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第3C~3E圖,先如第3C圖所示般使該預切割道(SL)與該線型裂片裝置300對準後,接著再如第3D圖所示般利用傳動機構350帶動線型裂片裝置300向上朝脆性材料基板200之下表面202運動,並使該脆性材料基板200在線型裂片裝置300接觸到預切割道(SL)時,被該線型裂片裝置300的張力裂片成如第3E圖所示之面積更小的次脆性材料基板200A、200B。 Next, referring to FIGS. 3C to 3E, first align the pre-cut track (SL) with the linear split device 300 as shown in FIG. 3C, and then use the transmission mechanism 350 to drive as shown in FIG. 3D. When the linear sliver device 300 moves upward toward the lower surface 202 of the brittle material substrate 200, and the brittle material substrate 200 is brought into contact with the pre-cut line (SL), the tension sliver of the linear sliver device 300 becomes the first Subarea brittle material substrates 200A and 200B with smaller areas shown in FIG. 3E.
實施例四 Embodiment 4
首先,請參閱第4A~4B圖,其所顯示的是另一種脆性材料基板裂片裝置40的部分示意圖,其包括一輸送系統370、一預切割裝置250以及一如第4B~4C圖所示位在該輸送系統370上方之線型裂片裝置300。輸送 系統370是用以輸送一具有相對上表面201與下表面202之脆性材料基板200,該輸送系統370包括複數個彼此平行沿第一方向延伸排列的滾筒375,且相鄰的該等第一滾筒375間具有一第二間隔378,其中該脆性材料基板200是藉由其下表面202被放置於該等滾筒375上。在本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而在其中一該等第二間隔378上、下運動。本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。 First, please refer to FIGS. 4A to 4B, which show a partial schematic view of another brittle material substrate chipping device 40, which includes a conveying system 370, a pre-cutting device 250, and a position as shown in FIGS. 4B to 4C. A linear lobing device 300 above the transport system 370. delivery The system 370 is used for conveying a brittle material substrate 200 having an upper surface 201 and a lower surface 202 opposite to each other. The conveying system 370 includes a plurality of rollers 375 extending parallel to each other in a first direction, and the adjacent first rollers There is a second space 378 between 375, wherein the brittle material substrate 200 is placed on the rollers 375 by its lower surface 202. In this embodiment, the linear sliver device 300 is a metal wire, a metal composite wire, or an insulated wire, which can be driven by one of the second intervals in one of the second spaces by the transmission mechanisms 350 located on both sides of the linear sliver device 300. 378 up and down movement. The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc.
其次,請繼續參閱第4A圖,利用此脆性材料基板裂片裝置40中之預切割裝置250在該脆性材料基板200之上表面201之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Secondly, please continue to refer to FIG. 4A, using the pre-cutting device 250 in the brittle material substrate splitting device 40 to pre-cut at a predetermined position on the upper surface 201 of the brittle material substrate 200, and form a depth less than the brittle material substrate Thick pre-cut (SL). In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第4B~4D圖,先如第4B圖所示般利用該輸送系統370輸送該脆性材料基板200,使該預切割道(SL)對準於其中一該第二間隔378,再使該脆性材料基板裂片裝置40中之該線型裂片裝置300對準該預 切割道後,然後再如第4C圖所示般利用傳動機構350帶動線型裂片裝置300向下,使線型裂片裝置300朝脆性材料基板200之上表面201運動,並使該脆性材料基板200在線型裂片裝置300接觸到預切割道(SL)時,被該線型裂片裝置300的張力裂片成如第4D圖所示之面積更小的次脆性材料基板200A、200B。 Next, referring to FIGS. 4B to 4D, first use the conveying system 370 to transport the brittle material substrate 200 as shown in FIG. 4B, and align the pre-cut line (SL) with one of the second intervals 378, and then Align the linear split device 300 in the brittle material substrate split device 40 with the preliminary After cutting the path, then as shown in FIG. 4C, the transmission mechanism 350 is used to drive the linear split device 300 downward, so that the linear split device 300 is moved toward the upper surface 201 of the brittle material substrate 200, and the brittle material substrate 200 is linearly split. When the device 300 comes into contact with the pre-cut line (SL), the tension lobes of the linear sliver device 300 are formed into sub-brittle material substrates 200A and 200B with smaller areas as shown in FIG. 4D.
實施例五 Example 5
首先,請參閱第5A~5B圖,其所顯示的是另一種脆性材料基板裂片裝置50的部分示意圖,其包括一輸送系統370、一預切割裝置250以及一如第5B~5C圖所示位在該輸送系統370下方的線型裂片裝置300。輸送系統370是用以輸送一具有相對上表面201與下表面202之脆性材料基板200,該輸送系統370包括複數個彼此平行沿第一方向延伸排列的滾筒375,且相鄰的該等第一滾筒375間具有一第二間隔378,其中該脆性材料基板200是藉由其下表面202被放置於該等滾筒375上。在本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而在其中一該等第二間隔378上、下運動。本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。 First, please refer to FIGS. 5A to 5B, which show a partial schematic view of another brittle material substrate chipping device 50, which includes a conveying system 370, a pre-cutting device 250, and a position as shown in FIGS. 5B to 5C. A linear sliver device 300 below the transport system 370. The conveying system 370 is used for conveying a brittle material substrate 200 having an upper surface 201 and a lower surface 202 opposite to each other. The conveying system 370 includes a plurality of rollers 375 arranged in parallel with each other and extending in a first direction. There is a second interval 378 between the rollers 375, wherein the brittle material substrate 200 is placed on the rollers 375 by its lower surface 202. In this embodiment, the linear sliver device 300 is a metal wire, a metal composite wire, or an insulated wire, which can be driven by one of the second intervals in one of the second spaces by the transmission mechanisms 350 located on both sides of the linear sliver device 300. 378 up and down movement. The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc.
其次,請繼續參閱第5A圖,利用此脆性材料基板裂片裝置50中之預切割裝置250在該脆性材料基板200之上表面201之一預定處進行預切割,並形成一深度小於該脆性材料基板厚度之預切割道(SL)。在本實施 例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Secondly, please continue to refer to FIG. 5A, using a pre-cutting device 250 in the brittle material substrate chipping device 50 to pre-cut at a predetermined position on an upper surface 201 of the brittle material substrate 200 and form a depth less than the brittle material substrate Thick pre-cut (SL). In this implementation For example, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine, wherein the gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, and a solid-state laser The cutting machine can be selected, for example, from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or femtosecond lasers. Shot cutting machine and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第5B~5D圖,先如第5B圖所示般利用該輸送系統370輸送該脆性材料基板200,使該預切割道(SL)對準於其中一該第二間隔378,再使該脆性材料基板裂片裝置50中之該線型裂片裝置300對準該預切割道後,然後再如第5C圖所示般利用傳動機構350帶動線型裂片裝置300向上,使線型裂片裝置300朝脆性材料基板200之下表面202運動,並使該脆性材料基板200在線型裂片裝置300接觸到預切割道(SL)時,被該線型裂片裝置300的張力裂片成如第5D圖所示之面積更小的次脆性材料基板200A、200B。 Next, referring to FIGS. 5B to 5D, first use the conveying system 370 to transport the brittle material substrate 200 as shown in FIG. 5B, so that the pre-cut line (SL) is aligned with one of the second intervals 378, and then After aligning the linear split device 300 in the brittle material substrate split device 50 with the pre-cut lane, as shown in FIG. 5C, the linear split device 300 is driven upward by the transmission mechanism 350, so that the linear split device 300 is directed toward the brittle material. When the lower surface 202 of the substrate 200 is moved and the brittle material substrate 200 is brought into contact with the pre-cut line (SL) by the linear sliver device 300, the area of the linear sliver device 300 is reduced to a smaller area as shown in FIG. 5D. Substrates 200A and 200B.
實施例六 Example Six
首先,請參閱第6A~6B圖,其所顯示的是另一種脆性材料基板裂片裝置60的部分示意圖,其包括一輸送系統380、一預切割裝置250以及一如第6B~6C圖所示之線型裂片裝置300。上述輸送系統380是用以輸送一具有相對上、下表面之脆性材料基板200,該輸送系統380包括一第一輸送機構380A與一第二輸送機構380B,其中該第一輸送機構380A包括一第一輸送帶383A及複數帶動該第一輸送帶383A之第一滾輪384A,該第二輸送機構380B包括一第二輸送帶383B及複數帶動該第二輸送帶383B之第二 滾輪384B,且該第一、第二輸送機構380A、380B之間具有一第三間隔388。 上述預切割裝置250是設置於該輸送系統380之上方,本實施例之預切割裝置250是設置於該第一輸送帶383A之上方,在根據本發明的其他實施例中預切割裝置250也可設置於該第二輸送帶383B之上方。如第6A圖所示,脆性材料基板200是藉由其下表面202先被放置於第一輸送機構380A上之第一輸送帶383A上。本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。此外,此線型裂片裝置300是設置於該輸送系統380之上方,且本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而在該第三間隔388上、下運動。 First, please refer to FIGS. 6A to 6B, which show a partial schematic view of another brittle material substrate chipping device 60, which includes a conveying system 380, a pre-cutting device 250, and a device as shown in FIGS. 6B to 6C.线 式 裂片 装置 300。 Linear sliver device 300. The conveying system 380 is used for conveying a brittle material substrate 200 having opposite upper and lower surfaces. The conveying system 380 includes a first conveying mechanism 380A and a second conveying mechanism 380B. The first conveying mechanism 380A includes a first conveying mechanism 380A. A conveyor belt 383A and a plurality of first rollers 384A driving the first conveyor belt 383A. The second conveyor mechanism 380B includes a second conveyor belt 383B and a plurality of second conveyor belts 383B. The roller 384B has a third interval 388 between the first and second conveying mechanisms 380A and 380B. The above-mentioned pre-cutting device 250 is disposed above the conveying system 380. The pre-cutting device 250 of this embodiment is disposed above the first conveyor belt 383A. In other embodiments according to the present invention, the pre-cutting device 250 may also be provided. It is disposed above the second conveyor belt 383B. As shown in FIG. 6A, the brittle material substrate 200 is first placed on the first conveyor belt 383A on the first conveyor mechanism 380A via its lower surface 202. The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc. In addition, the linear sliver device 300 is disposed above the conveying system 380. In this embodiment, the linear sliver device 300 is a metal wire, a metal composite wire, or an insulated wire, which can be located in the linear sliver device 300. The transmission mechanisms 350 on both sides are driven to move up and down in the third interval 388.
其次,請繼續參閱第6A圖,提供一具有相對上表面201與下表面202之脆性材料基板200,並將該脆性材料基板200放置於輸送系統380之第一輸送機構380A的第一輸送帶383A上,然後利用該脆性材料基板裂片裝置60中之該預切割裝置250在該脆性材料基板200之上表面201的一預定處進行預切割,並形成一深度小於該脆性材料基板200厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實 施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Next, please continue to refer to FIG. 6A to provide a brittle material substrate 200 having an upper surface 201 and a lower surface 202 opposite to each other, and place the brittle material substrate 200 on the first conveyor belt 383A of the first conveyance mechanism 380A of the conveyance system 380. Then, the pre-cutting device 250 in the brittle material substrate splitting device 60 is used to pre-cut at a predetermined position on the upper surface 201 of the brittle material substrate 200 to form a pre-cut having a depth smaller than the thickness of the brittle material substrate 200. Road (SL). In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. Moreover, in other embodiments according to the present invention, In the embodiment, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第6B~6D圖,如第6B圖所示,先利用第一、第二輸送機構380A、380B輸送該脆性材料基板200,使其跨越於該第一輸送機構380A與該第二輸送機構380B之間,並使該預切割道(SL)對準於該第一、第二輸送機構380A、380B之間的該第三間隔388。接著,使該脆性材料基板裂片裝置60中之該線型裂片裝置300對準該預切割道(SL),然後如第6C圖所示般,利用位在線型裂片裝置300兩側的傳動機構350帶動線型裂片裝置300向下運動,使線型裂片裝置300朝該脆性材料基板200之上表面201運動,並使該脆性材料基板200在該線型裂片裝置300接觸到該預切割道(SL)時,如第6D圖所示般被該線型裂片裝置300之張力裂片成面積更小的次脆性材料基板200A、200B。 Next, please refer to Figs. 6B to 6D. As shown in Fig. 6B, firstly, the first and second conveying mechanisms 380A and 380B are used to convey the brittle material substrate 200 so as to cross the first conveying mechanism 380A and the second The transport mechanism 380B is aligned with the pre-cut line (SL) at the third interval 388 between the first and second transport mechanisms 380A and 380B. Next, the linear split device 300 in the brittle material substrate split device 60 is aligned with the pre-cut line (SL), and as shown in FIG. 6C, it is driven by the transmission mechanisms 350 located on both sides of the linear split device 300. The linear sliver device 300 is moved downward to move the linear sliver device 300 toward the upper surface 201 of the brittle material substrate 200 and cause the brittle material substrate 200 to contact the pre-cut line (SL) when the linear sliver device 300 contacts the pre-cut line (SL), such as As shown in FIG. 6D, the tension lobes of the linear lobing device 300 are used to form sub-brittle material substrates 200A and 200B with smaller areas.
實施例七 Example Seven
首先,請參閱第7A~7B圖,其所顯示的是另一種脆性材料基板裂片裝置70的部分示意圖,其包括一輸送系統380、一預切割裝置250以及一如第6B~6C圖所示之線型裂片裝置300。上述輸送系統380是用以輸送一具有相對上、下表面之脆性材料基板200,該輸送系統380包括一第一輸送機構380A與一第二輸送機構380B,其中該第一輸送機構380A包括一第一輸送帶383A及複數帶動該第一輸送帶383A之第一滾輪384A,該第二輸送機構380B包括一第二輸送帶383B及複數帶動該第二輸送帶383B之第二滾輪384B,且該第一、第二輸送機構380A、380B之間具有一第三間隔388。上述預切割裝置250是設置於該輸送系統380之上方,本實施例之預切割裝 置是設置於該第一輸送帶383A之上方,在根據本發明的其他實施例中預切割裝置250也可設置於該第二輸送帶383B之上方。如第6A圖所示,脆性材料基板200是藉由其下表面202先被放置於第一輸送機構380A上之第一輸送帶383A上。本實施例上述脆性材料基板200為一玻璃基板,惟在根據本發明的其他實施例中,此脆性材料基板也可為半導體基板,例如矽晶圓、藍寶石基板、石英基板、碳化矽基板、氧化鋁基板、砷化鎵基板、氮化鎵基板、III-V族基板等。此外,此線型裂片裝置300是設置於該輸送系統380之下方,且本實施例中此線型裂片裝置300為一金屬線材、金屬複合線材或絕緣線材,其可藉由位在該線型裂片裝置300兩側的傳動機構350被帶動而在該第三間隔388上、下運動。 First, please refer to Figs. 7A to 7B, which show a partial schematic diagram of another brittle material substrate chipping device 70, which includes a conveying system 380, a pre-cutting device 250, and a device as shown in Figs. 6B to 6C.线 式 裂片 装置 300。 Linear sliver device 300. The conveying system 380 is used for conveying a brittle material substrate 200 having opposite upper and lower surfaces. The conveying system 380 includes a first conveying mechanism 380A and a second conveying mechanism 380B. The first conveying mechanism 380A includes a first conveying mechanism 380A. A conveyor belt 383A and a plurality of first rollers 384A driving the first conveyor belt 383A. The second conveyor mechanism 380B includes a second conveyor belt 383B and a plurality of second rollers 384B driving the second conveyor belt 383B. There is a third interval 388 between the first and second conveying mechanisms 380A and 380B. The pre-cutting device 250 is disposed above the conveying system 380. The pre-cutting device of this embodiment is The device is disposed above the first conveyor belt 383A. In other embodiments according to the present invention, the pre-cutting device 250 may be disposed above the second conveyor belt 383B. As shown in FIG. 6A, the brittle material substrate 200 is first placed on the first conveyor belt 383A on the first conveyor mechanism 380A via its lower surface 202. The brittle material substrate 200 in this embodiment is a glass substrate, but in other embodiments according to the present invention, the brittle material substrate may also be a semiconductor substrate, such as a silicon wafer, a sapphire substrate, a quartz substrate, a silicon carbide substrate, and an oxide. Aluminum substrate, gallium arsenide substrate, gallium nitride substrate, III-V substrate, etc. In addition, the linear sliver device 300 is disposed below the conveying system 380, and in this embodiment, the linear sliver device 300 is a metal wire, a metal composite wire, or an insulated wire, which can be located in the linear sliver device 300. The transmission mechanisms 350 on both sides are driven to move up and down in the third interval 388.
其次,請繼續參閱第7A圖,提供一具有相對上表面201與下表面202之脆性材料基板200,並將該脆性材料基板200放置於輸送系統380之第一輸送機構380A的第一輸送帶383A上,然後利用該脆性材料基板裂片裝置70中之該預切割裝置250在該脆性材料基板200之上表面201的一預定處進行預切割,並形成一深度小於該脆性材料基板200厚度之預切割道(SL)。在本實施例中,此預切割裝置250為一光學式預切割裝置,例如氣態雷射切割機或固態雷射切割機,其中上述氣態雷射切割機例如可選自二氧化碳雷射切割機,而固態雷射切割機例如可選自摻銣釔石榴石雷射(Nd:YAG Laser)切割機、紫外光雷射(UV Laser)切割機等皮秒雷射切割機、奈秒雷射切割機或飛秒雷射切割機等。此外,在根據本發明的其他實施例中,此預切割裝置250也可為一機械式預切割裝置,例如刀輪切割機或切割刀切割機。 Next, please continue to refer to FIG. 7A to provide a brittle material substrate 200 having an upper surface 201 and a lower surface 202 opposite to each other, and place the brittle material substrate 200 on the first conveyor belt 383A of the first conveyance mechanism 380A of the conveyance system 380. Then, the pre-cutting device 250 in the brittle material substrate splitting device 70 is used to perform pre-cutting at a predetermined position on the upper surface 201 of the brittle material substrate 200 and form a pre-cutting depth less than the thickness of the brittle material substrate 200. Road (SL). In this embodiment, the pre-cutting device 250 is an optical pre-cutting device, such as a gaseous laser cutting machine or a solid-state laser cutting machine. The gaseous laser cutting machine can be selected from a carbon dioxide laser cutting machine, for example. The solid-state laser cutting machine may be selected from picosecond laser cutting machines such as yttrium-doped yttrium garnet laser (Nd: YAG Laser) cutting machines, UV laser cutting machines, nanosecond laser cutting machines, or Femtosecond laser cutter and so on. In addition, in other embodiments according to the present invention, the pre-cutting device 250 may also be a mechanical pre-cutting device, such as a cutter wheel cutter or a cutter blade cutter.
接著,請參閱第7B~7D圖,如第7B圖所示,先利用第一、第二輸送機構380A、380B輸送該脆性材料基板200,使其跨越於該第一輸送機構380A與該第二輸送機構380B之間,並使該預切割道(SL)對準於該第一、第二輸送機構380A、380B之間的該第三間隔388。接著,使位在該輸送系統380下方的該線型裂片裝置300對準該預切割道(SL),然後如第7C圖所示般,利用位在線型裂片裝置300兩側的傳動機構350帶動線型裂片裝置300向上運動,使線型裂片裝置300朝該脆性材料基板200之下表面201運動,並使該脆性材料基板200在該線型裂片裝置300接觸到該預切割道(SL)時,如第7D圖所示般被該線型裂片裝置300之張力裂片成面積更小的次脆性材料基板200A、200B。 Next, please refer to Figs. 7B to 7D. As shown in Fig. 7B, first, the first and second conveying mechanisms 380A and 380B are used to convey the brittle material substrate 200 so as to cross the first conveying mechanism 380A and the second The transport mechanism 380B is aligned with the pre-cut line (SL) at the third interval 388 between the first and second transport mechanisms 380A and 380B. Next, the linear sliver device 300 located below the conveying system 380 is aligned with the pre-cut line (SL), and then as shown in FIG. 7C, the linear sliver device 300 on both sides of the linear sliver device 300 is used to drive the linear shape. The sliver device 300 moves upward to move the linear sliver device 300 toward the lower surface 201 of the brittle material substrate 200, and causes the brittle material substrate 200 to contact the pre-cut line (SL) when the linear sliver device 300 contacts the pre-cut line (SL), as in section 7D. As shown in the figure, the tension lobes of the linear lobing device 300 are formed into sub-brittle material substrates 200A and 200B with smaller areas.
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可更動與組合上述各種實施例。 Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can change and combine the above various implementations without departing from the spirit and scope of the present invention. example.
Claims (36)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106123111A TWI632040B (en) | 2017-07-10 | 2017-07-10 | Apparatus and method for breaking brittle substrate |
CN201710613859.3A CN109244037A (en) | 2017-07-10 | 2017-07-25 | Brittle material substrate splitting device and splitting method using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106123111A TWI632040B (en) | 2017-07-10 | 2017-07-10 | Apparatus and method for breaking brittle substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI632040B true TWI632040B (en) | 2018-08-11 |
TW201908088A TW201908088A (en) | 2019-03-01 |
Family
ID=63959964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106123111A TWI632040B (en) | 2017-07-10 | 2017-07-10 | Apparatus and method for breaking brittle substrate |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109244037A (en) |
TW (1) | TWI632040B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110407451B (en) * | 2019-07-12 | 2022-08-09 | 大族激光科技产业集团股份有限公司 | Glass cutting carrying platform and using method thereof |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011212963A (en) * | 2010-03-31 | 2011-10-27 | Mitsuboshi Diamond Industrial Co Ltd | Severing method of brittle material substrate |
TWI361797B (en) * | 2007-10-30 | 2012-04-11 | Top Eng Co Ltd | Crack progress system of glass substrate and crack progress method |
CN103203806A (en) * | 2012-01-16 | 2013-07-17 | 三星钻石工业股份有限公司 | Method for breaking brittle material substrate |
TW201511907A (en) * | 2013-09-30 | 2015-04-01 | Mitsuboshi Diamond Ind Co Ltd | Breaking method and breaking device for brittle material substrate |
JP2016040134A (en) * | 2015-12-24 | 2016-03-24 | 三星ダイヤモンド工業株式会社 | Breaking bar for brittle material substrate |
TWI581930B (en) * | 2012-10-29 | 2017-05-11 | 三星鑽石工業股份有限公司 | Fracture material of brittle material substrate and cracking method of brittle material substrate |
TWI583521B (en) * | 2012-10-29 | 2017-05-21 | 三星鑽石工業股份有限公司 | Cracking device of laminated brittle material substrate and cracking method of laminated brittle material substrate |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7241642B2 (en) * | 2004-01-30 | 2007-07-10 | Intel Corporation | Mounting and dicing process for wafers |
TW201112317A (en) * | 2009-09-22 | 2011-04-01 | Ching Hung Machinery & Electric Ind Co Ltd | Serial multi-thread saw crystal slicing device |
JP5991133B2 (en) * | 2012-10-16 | 2016-09-14 | 三星ダイヤモンド工業株式会社 | Breaking jig for brittle material substrate and breaking method |
KR101650076B1 (en) * | 2014-06-10 | 2016-08-22 | 한국미쯔보시다이아몬드공업(주) | Machining method of substrate of fragile material |
TWI571923B (en) * | 2014-10-09 | 2017-02-21 | 茂迪股份有限公司 | Ingot sawing device |
-
2017
- 2017-07-10 TW TW106123111A patent/TWI632040B/en not_active IP Right Cessation
- 2017-07-25 CN CN201710613859.3A patent/CN109244037A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI361797B (en) * | 2007-10-30 | 2012-04-11 | Top Eng Co Ltd | Crack progress system of glass substrate and crack progress method |
JP2011212963A (en) * | 2010-03-31 | 2011-10-27 | Mitsuboshi Diamond Industrial Co Ltd | Severing method of brittle material substrate |
CN103203806A (en) * | 2012-01-16 | 2013-07-17 | 三星钻石工业股份有限公司 | Method for breaking brittle material substrate |
TWI581930B (en) * | 2012-10-29 | 2017-05-11 | 三星鑽石工業股份有限公司 | Fracture material of brittle material substrate and cracking method of brittle material substrate |
TWI583521B (en) * | 2012-10-29 | 2017-05-21 | 三星鑽石工業股份有限公司 | Cracking device of laminated brittle material substrate and cracking method of laminated brittle material substrate |
TW201511907A (en) * | 2013-09-30 | 2015-04-01 | Mitsuboshi Diamond Ind Co Ltd | Breaking method and breaking device for brittle material substrate |
JP2016040134A (en) * | 2015-12-24 | 2016-03-24 | 三星ダイヤモンド工業株式会社 | Breaking bar for brittle material substrate |
Also Published As
Publication number | Publication date |
---|---|
TW201908088A (en) | 2019-03-01 |
CN109244037A (en) | 2019-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5979600B2 (en) | Sheet glass breaking and separating method | |
TWI625313B (en) | Scribing method | |
TWI429604B (en) | Method for breaking the brittle material substrate | |
KR20150045944A (en) | Method for cutting object to be processed | |
WO2005072926A1 (en) | Cutter wheel, scribing method and cutting method for fragile material substrate using the cutter wheel, and method of manufacturing cutter wheel | |
KR102205577B1 (en) | Break method of bonded substrate | |
JP2008078440A (en) | Light-emitting element, and its manufacturing method | |
JP6288258B2 (en) | Method for dividing brittle substrate | |
KR20190015176A (en) | Process for producing glass film | |
TWI632040B (en) | Apparatus and method for breaking brittle substrate | |
TW201032974A (en) | Method for scribing bonded substrates | |
TWI458690B (en) | Method of breaking the substrate | |
JP5639634B2 (en) | Substrate cutting system | |
JP2016112714A (en) | Dividing method and dividing device of substrate | |
CN107686232B (en) | Time difference cutting method for glass substrate | |
WO2015182298A1 (en) | Method for splitting brittle substrate | |
JP2017170757A (en) | Dividing device | |
JP5160628B2 (en) | Method for dividing bonded substrates | |
JP6175156B2 (en) | Substrate cutting device | |
US20230238772A1 (en) | Method for forming film on end-surface of laser diode bar | |
JP2017154969A (en) | Breaking apparatus for stuck substrate | |
JP2015017014A (en) | Break apparatus for aligned substrate | |
JP2019119642A (en) | Substrate parting device | |
JP2019108261A (en) | Substrate segmentation device | |
JP2016159580A (en) | Break device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |