TWI628814B - Light-emitting device - Google Patents

Abstract

本發明係揭露一發光裝置，包含一半導體發光元件，發出一第一光線並包含一出光面、一位於半導體發光元件之上並包含一第一區與一第二區的透明支撐元件，以及位於透明支撐元件之上的光學元件。第一光線經過光學元件以產生一具有一光場分布的第二光線，並且光場分布具有一最大值對應於第一區以及一最小值對應於第二區。 The invention discloses a light-emitting device comprising a semiconductor light-emitting element, emitting a first light and comprising a light-emitting surface, a transparent support element on the semiconductor light-emitting element and comprising a first region and a second region, and An optical element above the transparent support element. The first light passes through the optical element to produce a second light having a light field distribution, and the light field distribution has a maximum corresponding to the first zone and a minimum corresponding to the second zone.

Description

發光裝置 Illuminating device

本發明係揭露一種發光裝置，包含有半導體發光元件與光學元件。 The invention discloses a light-emitting device comprising a semiconductor light-emitting element and an optical element.

從白熾燈以來，發光二極體(Light-emitting diode；LED)因為兼具節能、綠色環保、壽命長、體積小等諸多優點而在各種照明應用上逐漸取代傳統照明燈具，而其中又以能發出白光的LED為各企業發展的重點。 Since the incandescent lamp, the light-emitting diode (LED) has gradually replaced the traditional lighting fixtures in various lighting applications because of its advantages of energy saving, environmental protection, long life and small size. White LEDs are the focus of development for all companies.

相關的照明技術中，除了調整色溫以及顏色的參數之外，也有調整燈具的出光方向與光場的技術。而發光二極體由於體積小的關係，通常是透過於外在封裝增加各種光學構件的方式將發光二極體發出的光進行反射、干涉或繞射，以調整需要的光場。 In the related lighting technology, in addition to adjusting the color temperature and color parameters, there are also techniques for adjusting the light exiting direction and light field of the lamp. Due to the small volume of the light-emitting diode, the light emitted by the light-emitting diode is usually reflected, interfered, or diffracted by adding various optical members to the external package to adjust the required light field.

各種不同的光學構件中，常見的有增加具有反射效果的光學構件於發光二極體相對於發光面的一側，例如反射板，藉此將發光二極體往另一側發出的光線反射回到發光面的同側， 達到增加光強度的效果。也有的是在發光面的一側或周圍加上具有改變光行進路線的光學構件，藉此遮擋(例如貼附在發光面上的光學膜)或反射(例如燈具內位於發光源周圍具有反射性的側壁)發光二極體所發出的部分光線，以改變發光二極體的光場而達到增加特定方向的光場，例如增加側向發光。 Among various optical members, it is common to increase the optical member having a reflection effect on one side of the light emitting diode with respect to the light emitting surface, such as a reflecting plate, thereby reflecting the light emitted from the light emitting diode to the other side back. To the same side of the light surface, Achieve the effect of increasing light intensity. There is also an optical member having a path of changing light traveling on one side or around the light-emitting surface, thereby shielding (for example, an optical film attached to the light-emitting surface) or reflection (for example, the light-emitting source is reflective around the light source) The side wall) emits part of the light emitted by the diode to change the light field of the light-emitting diode to increase the light field in a specific direction, for example, to increase lateral light emission.

而上述具有光學構件之發光二極體更可以進一步地與其他元件組合連接以形成一發光裝置(light-emitting device)；其中，發光裝置包含一具有至少一電路之次載體(sub-mount)；至少一焊料(solder)位於上述次載體上，藉由此焊料將上述發光元件黏結固定於次載體上並使發光元件之基板與次載體上之電路形成電連接；以及，一電性連接結構，以電性連接發光元件之電極與次載體上之電路；其中，上述之次載體可以是導線架(lead frame)或大尺寸鑲嵌基底(mounting substrate)，以方便發光裝置之電路規劃並提高其散熱效果。 The light-emitting diode having the optical member can be further combined with other components to form a light-emitting device; wherein the light-emitting device comprises a sub-mount having at least one circuit; At least one solder is disposed on the secondary carrier, wherein the light-emitting component is bonded and fixed to the secondary carrier by the solder, and the substrate of the light-emitting component is electrically connected to the circuit on the secondary carrier; and an electrical connection structure is Electrically connecting the electrode of the light-emitting element to the circuit on the secondary carrier; wherein the secondary carrier may be a lead frame or a large-sized mounting substrate to facilitate circuit planning and heat dissipation of the light-emitting device effect.

本發明係揭露一發光裝置，包含一半導體發光元件，包含一出光面並發出一第一光線；一透明支撐元件位於半導體發光元件之上；以及一光學元件位於透明支撐元件之上，包含一第一區與一第二區，其中第一光線經過光學元件以產生一第二光線，並且第二光線的光場具有一光場分布，並且光場分布具有一最大值對應於第一區以及一最小值對應於第二區。 The invention discloses a light-emitting device comprising a semiconductor light-emitting element comprising a light-emitting surface and emitting a first light; a transparent support element on the semiconductor light-emitting element; and an optical element on the transparent support element, comprising a first a region and a second region, wherein the first light passes through the optical element to generate a second light, and the light field of the second light has a light field distribution, and the light field distribution has a maximum corresponding to the first region and The minimum corresponds to the second zone.

本發明係揭露一發光裝置，包含一半導體發光元件，包含一出光面；一第一電極連接於半導體發光元件；一透明支撐元件包含一底面，位於半導體發光元件之上；以及一光學結構位於透明支撐元件之上，包含覆蓋於出光面之上的一第二區與一平行於該出光面的第一區，其中至少一部份第一電極被透明支撐元件覆蓋但未被半導體發光元件覆蓋，並且發光裝置發出一光場包含一最大值大致對應第一區以及一最小值大致對應第二區。 The invention discloses a light-emitting device comprising a semiconductor light-emitting element comprising a light-emitting surface; a first electrode connected to the semiconductor light-emitting element; a transparent support element comprising a bottom surface on the semiconductor light-emitting element; and an optical structure being transparent The support member includes a second region overlying the light exit surface and a first region parallel to the light exit surface, wherein at least a portion of the first electrode is covered by the transparent support member but is not covered by the semiconductor light emitting element. And the light emitting device emits a light field including a maximum value corresponding to the first area and a minimum value corresponding to the second area.

本發明係揭露一發光裝置，包含一半導體發光元件，包含一出光面；以及一透明支撐元件，包含第一斜面、第二斜面與底面，並位於半導體發光元件之上；其中發光裝置發出一光場包含一最大值大致對應第一斜面或第二斜面以及一最小值大致對應底面。 The present invention discloses a light-emitting device comprising a semiconductor light-emitting element comprising a light-emitting surface, and a transparent support member comprising a first slope, a second slope and a bottom surface, and located above the semiconductor light-emitting element; wherein the light-emitting device emits a light The field includes a maximum corresponding to the first bevel or the second bevel and a minimum substantially corresponding to the bottom surface.

本發明係揭露一發光裝置，包含複數個半導體發光元件，其中各半導體發光元件包含一上表面、一下表面以及一反射層位於上表面與下表面之間，其中下表面的寬度小於上表面的寬度；以及一光學元件覆蓋複數個半導體發光元件。 The invention discloses a light-emitting device comprising a plurality of semiconductor light-emitting elements, wherein each semiconductor light-emitting element comprises an upper surface, a lower surface and a reflective layer between the upper surface and the lower surface, wherein the width of the lower surface is smaller than the width of the upper surface And an optical component covering a plurality of semiconductor light emitting elements.

2、2R、2G、2B‧‧‧發光元件 2, 2R, 2G, 2B‧‧‧ light-emitting elements

4‧‧‧透明支撐元件 4‧‧‧ Transparent support elements

6、106、107‧‧‧光學元件 6, 106, 107‧‧‧ optical components

1061‧‧‧內表面 1061‧‧‧ inner surface

1064‧‧‧外表面 1064‧‧‧ outer surface

8、12‧‧‧光學層 8, 12‧‧‧ optical layer

10‧‧‧反射板 10‧‧‧reflector

1201‧‧‧第一光學層 1201‧‧‧First optical layer

1202‧‧‧第二光學層 1202‧‧‧Second optical layer

1203‧‧‧第三光學層 1203‧‧‧ Third optical layer

14‧‧‧光阻層 14‧‧‧ photoresist layer

520‧‧‧散熱裝置 520‧‧‧heating device

521‧‧‧散熱部 521‧‧‧ Department of heat dissipation

522‧‧‧支撐部 522‧‧‧Support

5221‧‧‧第一部分 5221‧‧‧Part 1

5522‧‧‧第二部分 5522‧‧‧Part II

5223‧‧‧第三部分 5223‧‧‧Part III

20‧‧‧載板 20‧‧‧ Carrier Board

201‧‧‧發光疊層 201‧‧‧Lighting laminate

21‧‧‧基板 21‧‧‧Substrate

212‧‧‧第一型半導體層 212‧‧‧First type semiconductor layer

213‧‧‧活性層 213‧‧‧Active layer

214‧‧‧第二型半導體層 214‧‧‧Second type semiconductor layer

215‧‧‧第一電極層 215‧‧‧First electrode layer

216‧‧‧第二電極層 216‧‧‧Second electrode layer

217‧‧‧阻擋層 217‧‧‧Block

22‧‧‧側面 22‧‧‧ side

24‧‧‧出光面 24‧‧‧Glossy

26‧‧‧接合面 26‧‧‧ joint surface

30‧‧‧波長轉換層 30‧‧‧wavelength conversion layer

40‧‧‧承載板 40‧‧‧Loading board

42‧‧‧側壁 42‧‧‧ side wall

44、68‧‧‧頂面 44, 68‧‧‧ top

46‧‧‧底面 46‧‧‧ bottom

480、482‧‧‧斜面 480, 482‧‧ ‧ bevel

60‧‧‧隔離層 60‧‧‧Isolation

62‧‧‧側邊 62‧‧‧ side

64、66‧‧‧斜邊 64, 66‧‧‧ oblique sides

71‧‧‧第一暫時載板 71‧‧‧First temporary carrier

72‧‧‧第二暫時載板 72‧‧‧Second temporary carrier

80、82、84、86、88‧‧‧切割道 80, 82, 84, 86, 88‧‧ ‧ cutting road

801、811‧‧‧成長基板 801, 811‧‧‧ growth substrate

802‧‧‧溝槽 802‧‧‧ trench

100、200、300、400、500、600、700、800、900、1000、1000R、1000G、1000B、1000P‧‧‧發光裝置 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 1000R, 1000G, 1000B, 1000P‧‧‧ illuminating devices

122‧‧‧第一絕緣層 122‧‧‧First insulation

124‧‧‧第二絕緣層 124‧‧‧Second insulation

126‧‧‧第三絕緣層 126‧‧‧ third insulation

142‧‧‧第一電極 142‧‧‧First electrode

143‧‧‧空隙 143‧‧‧ gap

144‧‧‧第二電極 144‧‧‧second electrode

146‧‧‧中間層 146‧‧‧ middle layer

1420、1440、1480‧‧‧導電黏著材料 1420, 1440, 1480‧‧‧ Conductive adhesive materials

1481‧‧‧基材 1481‧‧‧Substrate

1482‧‧‧導電黏著膜 1482‧‧‧Electrically conductive film

601‧‧‧第一區 601‧‧‧First District

602、604‧‧‧第二區 602, 604‧‧‧ second district

6021、6022、6023、6024、6025、6026、6027、6028、6029、6030、6031、6032、6033、6034‧‧‧第二次區 6021, 6022, 6023, 6024, 6025, 6026, 6027, 6028, 6029, 6030, 6031, 6032, 6033, 6034‧‧‧ second district

W、WL、WD‧‧‧寬度 W, WL, WD‧‧‧ width

D‧‧‧深度 D‧‧‧Deep

A‧‧‧凹陷方向 A‧‧‧ recessed direction

θ‧‧‧頂角 Θ‧‧‧ top angle

圖1a-1b為根據本發明之一實施例的發光裝置示意圖；圖2a-2b為根據本發明之一實施例的發光裝置示意圖； 圖3為根據本發明之一實施例的發光裝置所發出的光場示意圖；圖4a-4e為根據本發明實施例中光學元件的上視圖；圖5a-5b為根據本發明實施例中光學元件的上視圖；圖6為根據本發明之一實施例的發光裝置示意圖；圖7a-7b為根據本發明實施例的發光裝置示意圖；圖8為根據本發明實施例的發光裝置示意圖；圖9a-9h為根據本發明實施例的發光裝置製造方法之流程圖；圖10a-10b為根據本發明實施例的發光裝置示意圖；圖11為根據本發明實施例的光學元件之示意圖；圖12為根據本發明實施例的發光裝置示意圖；圖13a-13b為根據本發明實施例的光學層之光學特性示意圖；圖14a-14c為根據本發明實施例的發光裝置示意圖；圖15為根據本發明實施例的發光裝置示意圖；圖16a-16b為根據本發明實施例的發光裝置示意圖；圖17a-17b為根據本發明之實施例的發光裝置所發出的光場示意圖；圖18a~18d為根據本發明實施例的發光裝置所發出光線的CIE座標偏移；圖19a-19f為根據本發明實施例的發光裝置示意圖； 圖20a-20f為根據本發明實施例的發光裝置示意圖；圖21a-21b為根據本發明實施例的發光裝置示意圖；圖22a-22e為根據本發明實施例的發光裝置示意圖；圖23a-23d為根據本發明實施例的發光裝置製造方法之流程圖；圖24a-24c為根據本發明實施例的發光裝置示意圖；圖25a-25d為根據本發明實施例中導電黏著材料形成於發光元件上之不同實施例之製造流程示意圖。 1a-1b are schematic views of a light emitting device according to an embodiment of the present invention; and Figs. 2a-2b are schematic views of a light emitting device according to an embodiment of the present invention; 3 is a schematic view of a light field emitted by a light emitting device according to an embodiment of the present invention; FIGS. 4a-4e are top views of optical elements in accordance with an embodiment of the present invention; and FIGS. 5a-5b are optical elements in accordance with an embodiment of the present invention. Figure 6 is a schematic view of a light-emitting device according to an embodiment of the present invention; Figures 7a-7b are schematic views of a light-emitting device according to an embodiment of the present invention; and Figure 8 is a schematic view of a light-emitting device according to an embodiment of the present invention; 9h is a flow chart of a method of manufacturing a light-emitting device according to an embodiment of the present invention; FIGS. 10a-10b are schematic views of a light-emitting device according to an embodiment of the present invention; FIG. 11 is a schematic view of an optical element according to an embodiment of the present invention; FIG. 13a-13b are schematic diagrams showing optical characteristics of an optical layer according to an embodiment of the present invention; FIGS. 14a-14c are schematic views of a light emitting device according to an embodiment of the present invention; and FIG. 15 is a schematic view of a light emitting device according to an embodiment of the present invention; Schematic diagram of a light-emitting device; FIGS. 16a-16b are schematic views of a light-emitting device according to an embodiment of the present invention; and FIGS. 17a-17b are schematic diagrams of light fields emitted by a light-emitting device according to an embodiment of the present invention 18a-18d are CIE coordinate offsets of light emitted by a light emitting device according to an embodiment of the present invention; and FIGS. 19a-19f are schematic views of a light emitting device according to an embodiment of the present invention; 20a-20f are schematic views of a light emitting device according to an embodiment of the present invention; FIGS. 21a-21b are schematic views of a light emitting device according to an embodiment of the present invention; and Figs. 22a-22e are schematic views of a light emitting device according to an embodiment of the present invention; Figs. 23a-23d are A flowchart of a method of fabricating a light emitting device according to an embodiment of the present invention; FIGS. 24a-24c are schematic views of a light emitting device according to an embodiment of the present invention; and FIGS. 25a-25d are different views of a conductive adhesive material formed on a light emitting device according to an embodiment of the present invention; A schematic diagram of the manufacturing process of the examples.

圖26a-26e為根據本發明實施例中導電黏著材料形成於發光元件上之不同實施例之製造流程示意圖。 26a-26e are schematic views showing the manufacturing process of different embodiments in which a conductive adhesive material is formed on a light-emitting element according to an embodiment of the present invention.

圖27a-27h為根據本發明實施例中發光裝置製造方法之流程剖面圖。 27a-27h are cross-sectional views showing the flow of a method of fabricating a light emitting device in accordance with an embodiment of the present invention.

圖28a-28c為根據本發明實施例的發光裝置示意圖；圖29a-29e為根據本發明實施例的發光裝置示意圖；圖30a-30d為根據本發明實施例的發光裝置示意圖。 28a-28c are schematic views of a light emitting device according to an embodiment of the present invention; FIGS. 29a-29e are schematic views of a light emitting device according to an embodiment of the present invention; and Figs. 30a-30d are schematic views of a light emitting device according to an embodiment of the present invention.

第1a圖為根據本發明一實施例所揭露之一發光裝置100，發光裝置100包含一透明支撐元件4形成於發光元件2之上，以及一覆蓋於透明支撐元件4之上的光學元件6。在本實施例中，發光元件2為一可發出非同調性光的半導體發光元件。發光元件2具有一側面22環繞發光元件2、一出光面24以及一接合面26，其 中側面22垂直於出光面24與接合面26。透明支撐元件4覆蓋著發光元件2的出光面24與側面22，並且具有一側壁42環繞透明支撐元件4與發光元件2、一頂面44介於發光元件2與光學元件6之間，以及一底面46。其中，透明支撐元件4的頂面44位於出光面24的上方。由於頂面44在水平方向上的面積大於出光面24，因此也可以說頂面44覆蓋出光面24，但頂面44並不與出光面24共平面在頂面44與出光面24之間存在有透明支撐元件4。側壁42則垂直於頂面44與底面46，並且底面46與發光元件2的接合面26共平面。在另一實施例中，發光元件2的接合面26與底面46不共平面，例如透明支撐元件4將發光元件2包覆於內。在本實施例中，頂面44與出光面24平行，而且側壁42垂直出光面24並平行側面22。在別的實施例中，頂面44與出光面24不平行，因此側壁42僅垂直於頂面44或出光面24其中之一，但側壁42仍平行側面22。而在另一實施例中側壁42為一斜面，此時側壁42不垂直於頂面44或出光面24，並且側壁42也不平行於發光元件2的側面22。在本實施例中，側面22為一垂直於出光面24的平面，在別的實施例中側面22也可以為一斜面，並且不垂直於出光面24。在本實施例中，側面22與出光面24為相互垂直的平面，而在別的實施例中側面22與出光面24也可以視需求而形成相互垂直或不垂直的平面組合。在別的實施例中側面22與出光面24可以同為粗糙面，也可以僅有其中一面為粗糙面而另一面為平面。參考第1b圖，第1b圖具有跟第1a圖類似的結構，其中光學 元件6可以是一個多邊形，例如長方形、六角形或正方形，具有一側邊62環繞光學元件6，以及連結側邊62並位於光學元件6相對兩側的兩個斜邊64與66，而斜邊64與66並不接觸透明支撐元件4。換句話說，斜邊64與66形成在具有一高度不為零的側邊62之上，使得光學元件6具上窄下寬的外型。以長方形之光學元件6為例，光學元件6可以在四個邊上都形成斜邊，而相鄰的斜邊之間也會形成稜線；也可以是只有兩個斜邊，並且所在的位置不限於同在長方形的短邊或者長邊，也可以是位於長方形相鄰接的一個長邊與一個短邊上，這種情況下在相鄰的兩個斜邊上也會形成稜線。藉由在光學元件6上形成斜邊64與66，使發光元件2所發出的光在經過光學元件6的斜邊時改變了行進方向，因此光線分布的角度也隨之改變，所以第1a圖中的裝置與第1b中的裝置具有不同的光場。 FIG. 1a is a light emitting device 100 according to an embodiment of the invention. The light emitting device 100 comprises a transparent supporting member 4 formed on the light emitting element 2 and an optical element 6 covering the transparent supporting member 4. In the present embodiment, the light-emitting element 2 is a semiconductor light-emitting element that emits non-coherent light. The light-emitting element 2 has a side surface 22 surrounding the light-emitting element 2, a light-emitting surface 24 and a joint surface 26, The middle side 22 is perpendicular to the light exit surface 24 and the joint surface 26. The transparent supporting member 4 covers the light emitting surface 24 and the side surface 22 of the light emitting element 2, and has a side wall 42 surrounding the transparent supporting member 4 and the light emitting element 2, a top surface 44 between the light emitting element 2 and the optical element 6, and a Bottom surface 46. The top surface 44 of the transparent support element 4 is located above the light exit surface 24 . Since the area of the top surface 44 in the horizontal direction is larger than the light exit surface 24, it can also be said that the top surface 44 covers the light surface 24, but the top surface 44 is not coplanar with the light exit surface 24 between the top surface 44 and the light exit surface 24. There is a transparent support element 4. The side wall 42 is perpendicular to the top surface 44 and the bottom surface 46, and the bottom surface 46 is coplanar with the joint surface 26 of the light-emitting element 2. In another embodiment, the bonding surface 26 of the light-emitting element 2 is not coplanar with the bottom surface 46, for example the transparent support element 4 encloses the light-emitting element 2 therein. In the present embodiment, the top surface 44 is parallel to the light exit surface 24, and the side walls 42 are perpendicular to the light exit surface 24 and parallel to the side surface 22. In other embodiments, the top surface 44 is not parallel to the light exit surface 24, such that the side wall 42 is only perpendicular to one of the top surface 44 or the light exit surface 24, but the side walls 42 are still parallel to the side surface 22. In another embodiment, the side wall 42 is a bevel, in which case the side wall 42 is not perpendicular to the top surface 44 or the light exit surface 24, and the side wall 42 is also not parallel to the side surface 22 of the light emitting element 2. In this embodiment, the side surface 22 is a plane perpendicular to the light exit surface 24, and in other embodiments, the side surface 22 may also be a sloped surface and not perpendicular to the light exit surface 24. In this embodiment, the side surface 22 and the light-emitting surface 24 are mutually perpendicular planes, and in other embodiments, the side surface 22 and the light-emitting surface 24 may also form a plane combination that is perpendicular or non-perpendicular to each other as needed. In other embodiments, the side surface 22 and the light-emitting surface 24 may be the same as a rough surface, or only one of the surfaces may be a rough surface and the other surface may be a flat surface. Referring to Figure 1b, Figure 1b has a structure similar to that of Figure 1a, in which the optics The element 6 can be a polygon, such as a rectangle, a hexagon or a square, having a side 62 surrounding the optical element 6, and two beveled edges 64 and 66 joining the sides 62 and located on opposite sides of the optical element 6, with the beveled edges 64 and 66 do not contact the transparent support member 4. In other words, the beveled edges 64 and 66 are formed on a side 62 having a height other than zero such that the optical element 6 has a top, bottom, and wide profile. Taking the rectangular optical element 6 as an example, the optical element 6 can form a beveled edge on four sides, and a ridge line is formed between adjacent oblique sides; or only two oblique sides can be formed, and the position is not It is limited to the short side or the long side of the same rectangular shape, or may be a long side and a short side adjacent to the rectangular shape. In this case, ridge lines are also formed on the adjacent two oblique sides. By forming the oblique sides 64 and 66 on the optical element 6, the light emitted by the light-emitting element 2 changes the direction of travel as it passes through the oblique side of the optical element 6, so that the angle of the light distribution also changes, so Figure 1a The device in the device has a different light field than the device in the 1b.

第2a-2b圖為根據本發明一實施例所揭露之一發光裝置200，發光裝置200包含一發光元件2、一包覆發光元件2之透明支撐元件4，以及一覆蓋於透明支撐元件4之上的光學元件6。光學元件6在遠離發光元件2的表面上包含有第一區601與第二區602，其中第一區601平行於出光面24，而第二區602位於第一區601之間。本實施例中，第一區601為平面區域，而第二區602則為具有凹陷部的區域。如第2a圖所示，第二區602具有一凹陷部以一往發光元件2延伸的凹陷方向A凹陷，並且凹陷方向A垂直於光學元件6上第一區601所在區域的表面。參考第2a圖， 第二區602的凹陷部在與第一區601共水平面上具有一最大寬度W以及一最大深度D，而寬度W與深度D的比例約為2：1。並且本實施例中第二區602在凹陷處最靠近發光元件2的位置，具有一約為90度的頂角θ。在其他實施例中，可以依照所需要的光學特性，例如光場，來選擇第二區602的各種參數，例如第二區602中凹陷部的最大寬度W與深度D的比例可以是大於或小於2：1，而位於凹陷方向A頂點的頂角θ可以是一直角、銳角或是鈍角。本實施例中，僅第二區602位於發光元件2的正上方。參考第2b圖，發光元件2的側面22往正上方的延伸線和光學元件6的第二區602相交，而發光元件2的出光面24在第二區602的正下方。第二區602的最大寬度W大於發光元件2的寬度，並且第二區602的最大寬度W與發光元件2的寬度之間的比例介於1：0.01~1：1之間。在別的實施例中，第二區602的最大寬度W小於發光元件2的寬度，並且第二區602的最大寬度W與發光元件2的寬度之間的比例介於1：1~1：1.1之間。參考第2b圖，一光學層8形成於光學元件6之上，覆蓋第二區602的一部分並位於發光元件2的正上方，同時光學層8並未接觸第一區601。本實施例中，光學層8的最大寬度WL大於出光面24的寬度WD，同時大於發光元件2的寬度。此外，光學層8可以覆蓋整個第二區602，或是延伸到第一區601。在別的實施例中光學層8的最大寬度WL小於或等於出光面24的寬度WD。在本實施例中，光學層8對入射到光學層8的光線所具有的波長之波峰值範圍在450-475nm之間時，具有大於 85%的反射率；或在所入射的光線波長之波峰值介於400-600nm的範圍間時具有大於80%的反射率。在別的實施例中，光學元件6之上不具有凹陷部，此時將覆蓋有光學層8的區域定義為第二區602，並且第二區602依然在發光元件2的正上方。在其他實施例中，光學元件6不僅在表面上具有第一區601、第二區602與光學層8，也可以運用製程方法在兩側形成如第1b圖中的斜邊64與66，藉此達到需要的光學特性，例如光場。 2a-2b is a light emitting device 200 according to an embodiment of the invention. The light emitting device 200 comprises a light emitting element 2, a transparent supporting member 4 covering the light emitting element 2, and a transparent supporting member 4. Upper optical element 6. The optical element 6 includes a first region 601 and a second region 602 on a surface remote from the light-emitting element 2, wherein the first region 601 is parallel to the light-emitting surface 24 and the second region 602 is located between the first regions 601. In this embodiment, the first region 601 is a planar region, and the second region 602 is a region having a depressed portion. As shown in Fig. 2a, the second region 602 has a depressed portion recessed in a recessed direction A extending toward the light-emitting element 2, and the recessed direction A is perpendicular to the surface of the region of the optical element 6 where the first region 601 is located. Refer to Figure 2a, The recessed portion of the second region 602 has a maximum width W and a maximum depth D on a level plane with the first region 601, and the ratio of the width W to the depth D is about 2:1. Also, in the present embodiment, the second region 602 has a vertex angle θ of about 90 degrees at a position closest to the light-emitting element 2 at the recess. In other embodiments, various parameters of the second region 602 may be selected in accordance with desired optical characteristics, such as a light field, for example, the ratio of the maximum width W to the depth D of the depressed portion in the second region 602 may be greater or lesser. 2:1, and the apex angle θ at the vertex of the recess A may be a right angle, an acute angle or an obtuse angle. In the present embodiment, only the second region 602 is located directly above the light-emitting element 2. Referring to Fig. 2b, the extension line of the side surface 22 of the light-emitting element 2 directly intersects the second region 602 of the optical element 6, and the light-emitting surface 24 of the light-emitting element 2 is directly below the second region 602. The maximum width W of the second region 602 is greater than the width of the light-emitting element 2, and the ratio between the maximum width W of the second region 602 and the width of the light-emitting element 2 is between 1:0.01 and 1:1. In other embodiments, the maximum width W of the second region 602 is smaller than the width of the light-emitting element 2, and the ratio between the maximum width W of the second region 602 and the width of the light-emitting element 2 is between 1:1 and 1:1.1. between. Referring to Figure 2b, an optical layer 8 is formed over the optical element 6, covering a portion of the second region 602 and directly above the light-emitting element 2, while the optical layer 8 is not in contact with the first region 601. In the present embodiment, the maximum width WL of the optical layer 8 is larger than the width WD of the light-emitting surface 24 and larger than the width of the light-emitting element 2. Furthermore, the optical layer 8 can cover the entire second zone 602 or extend to the first zone 601. In other embodiments, the maximum width WL of the optical layer 8 is less than or equal to the width WD of the light exit surface 24. In the present embodiment, the optical layer 8 has a wavelength greater than the wavelength peak of the wavelength of the light incident on the optical layer 8 between 450 and 475 nm. 85% reflectivity; or greater than 80% reflectivity at peaks of incident light wavelengths between 400 and 600 nm. In other embodiments, there is no recess above the optical element 6, in which case the area covered with the optical layer 8 is defined as the second area 602, and the second area 602 is still directly above the light-emitting element 2. In other embodiments, the optical element 6 has not only the first region 601, the second region 602 and the optical layer 8 on the surface, but also the beveled edges 64 and 66 as shown in FIG. 1b on both sides by a process method. This achieves the desired optical properties, such as the light field.

上述實施例中，光學層8可以是一單層結構或是多層結構。單層結構例如為一金屬層，包含例如銀或者鋁，或是一氧化物層，包含例如氧化鈦，利用材料的反射性改變發光元件2所發出來的光的行進路線。其中，金屬材料選擇在製程中較不會與環境中其他材料發生反應的金屬，例如製程環境中含有硫的情況下就避免選擇銀，以免產生硫化銀等包含硫與銀的化合物。多層結構可以是分散式布拉格反射鏡(Distributed Bragg reflector；DBR)，例如氧化鈦(TiO2)與(SiO2)的疊層，或是金屬與金屬氧化物的疊層，例如鋁與氧化鋁的疊層，以達到反射的效果。在其他實施例中，光學層8更可以包含有波長轉換材料。在本實施例中，不論是單層結構或者多層結構，都不會完全反射光線，因此至少有部分的光線會直接穿過光學層8。在別的實施例中，可以透過增加厚度或者多層結構的層數使光線不直接穿過光學層8以增加反射的效果。 In the above embodiment, the optical layer 8 may be a single layer structure or a multilayer structure. The single layer structure is, for example, a metal layer containing, for example, silver or aluminum, or an oxide layer containing, for example, titanium oxide, which changes the path of travel of the light emitted by the light-emitting element 2 by the reflectivity of the material. Among them, the metal material is selected to be a metal that does not react with other materials in the environment during the process, for example, in the case of sulfur in the process environment, silver is avoided to avoid the formation of compounds containing sulfur and silver such as silver sulfide. The multilayer structure may be a distributed Bragg reflector (DBR), such as a laminate of titanium oxide (TiO2) and (SiO2), or a stack of metal and metal oxide, such as a laminate of aluminum and aluminum oxide. To achieve the effect of reflection. In other embodiments, the optical layer 8 may further comprise a wavelength converting material. In this embodiment, the light is not completely reflected, whether it is a single layer structure or a multilayer structure, so that at least part of the light passes directly through the optical layer 8. In other embodiments, the light may not pass directly through the optical layer 8 by increasing the thickness or the number of layers of the multilayer structure to increase the effect of reflection.

參考第2a-2b圖，其中發光元件2發出的第一光線， 經過透明支撐元件4與光學元件6之後成為第二光線。當透明支撐元件4內不包含波長轉換材料的情況下，第一光線的波長之波峰值與第二光線的波長之波峰值相同。當第一光線經過透明支撐元件4之後，部分的第一光線受到光學層8影響，或是在經過第二區602的時候因為光學元件6與外在環境折射率的不同影響，進而改變了光線的行進方向，使得第二光線與第一光線具有不同的光場分布。在別的實施例中，光學元件6更同時具有第1b圖中的斜邊64與66以及第2b圖中的光學層8，使得部分被光學層8反射的第一光線會從斜邊64與66側離開光學元件6而成為第二光線的一部分。由於斜邊64與66的尺寸、位置與傾斜角度(相對於光學元件6之表面)的不同，會影響到第一光線的行進路線。在其他實施例中，透明支撐元件4及/或光學元件6內部包含有波長轉換材料時，第一光線的行進路線將會影響第一光線被波長轉換材料所轉換的量，例如原本50%的第一光線的行進路線會接觸到波長轉換材料，但是當斜邊64與66的尺寸、位置與傾斜角度有所改變時，可能僅有30%的第一光線會接觸到波長轉換材料，此時第二光線的光學特性，例如色溫、亮度、CIE XY色度座標點或波長分布範圍，會因此有所改變。在一實施例中，發光元件2發出的第一光線為藍光，並且在透明支撐元件4內具有將藍光轉換為黃綠光的波長轉換材料，在這個實施例中當斜邊64與66的尺寸較大與位置較低時(側邊62較窄或較短)，原本沒碰觸到波長轉換材料便離開光學元件6的第一光線在斜邊產生反射，使得 更多第一光線接觸到波長轉換材料並激發產生更多的黃綠光，第二光線的波長分布範圍因而會往波長較長的範圍移動。具體而言，第二光線的波長之波峰值會偏向紅光的波長範圍，或是說第二光線的色度座標往CIE色度座標的左下方移動。 Referring to Figures 2a-2b, wherein the first light emitted by the light-emitting element 2, After passing through the transparent support member 4 and the optical element 6, it becomes a second light. When the transparent support member 4 does not contain the wavelength conversion material, the peak value of the wavelength of the first light is the same as the peak value of the wavelength of the second light. After the first light passes through the transparent support member 4, part of the first light is affected by the optical layer 8, or changes the light when passing through the second region 602 due to the difference in refractive index between the optical element 6 and the external environment. The direction of travel is such that the second ray has a different light field distribution than the first ray. In other embodiments, the optical element 6 has both the oblique sides 64 and 66 of FIG. 1b and the optical layer 8 of FIG. 2b such that the first light partially reflected by the optical layer 8 will be from the oblique side 64. The 66 side leaves the optical element 6 and becomes part of the second ray. Due to the difference in size, position and angle of inclination of the oblique sides 64 and 66 (relative to the surface of the optical element 6), the course of travel of the first light is affected. In other embodiments, when the transparent support member 4 and/or the optical member 6 internally contains the wavelength converting material, the path of travel of the first light will affect the amount of the first light converted by the wavelength converting material, for example, 50% of the original. The path of travel of the first ray is in contact with the wavelength converting material, but when the size, position and tilt angle of the slanted edges 64 and 66 are changed, only 30% of the first ray may be in contact with the wavelength converting material. The optical properties of the second ray, such as color temperature, brightness, CIE XY chromaticity coordinate point or wavelength distribution range, may vary. In one embodiment, the first light emitted by the light-emitting element 2 is blue light, and has a wavelength converting material that converts blue light into yellow-green light within the transparent support member 4, in this embodiment, the sizes of the oblique sides 64 and 66 are larger. When the position is lower (the side 62 is narrower or shorter), the first light that leaves the optical element 6 without touching the wavelength conversion material causes reflection at the oblique side, so that More of the first light contacts the wavelength converting material and excites to produce more yellow-green light, and the wavelength distribution of the second light thus shifts to a longer wavelength range. Specifically, the peak value of the wavelength of the second light is biased toward the wavelength range of the red light, or the chromaticity coordinate of the second light is moved to the lower left of the CIE chromaticity coordinate.

在上述的實施例中，發光元件2與透明支撐元件4的尺寸具有相同、相近或相異的長度及/或寬度的比例，並具有相似的高度，也就是透明支撐元件4的頂面44與發光元件2的出光面24之間的距離很近。對發光裝置100與200而言，在水平面上的第一方向上發光元件2與透明支撐元件4的尺寸具有一個第一比例，而在水平面上的第二方向上具有一個第二比例，其中第一方向垂直於第二方向，並且第一比例可以是大於、等於或者小於第二比例。當發光元件2為長方形時，第一方向與第二方向分別代表發光元件2長邊的方向與發光元件2短邊的方向。在一實施例中，第一比例與第二比例大約是介於1：1.04~1：7.1之間。此外，當本發明實施例中的兩個發光裝置具有相同或者相近之第一比例及/或第二比例，並且其水平面上的邊長中的較短邊長的長度大於某個限制值，此二發光裝置具有大致相同的發光強度。舉例而言，發光裝置A具有一第一比例為1：2.11以及一第二比例為1：1.83，以及一發光裝置B具有一第一比例為1：1.81以及一第二比例為1：1.57，兩個發光裝置的發光強度之間的差值小於發光裝置A的發光強度的百分之一。在這個實施例中，兩個發光裝置具有相近的第一比例及第二比例，第一比例的比值為1.16(2.11/1.81=1.16)， 而第二比例的比值為1.65(1.83/1.57=1.65)，兩個發光裝置之間對應的兩個比例之間的比值皆小於2，而兩個發光裝置的發光強度差也小於百分之一。若是兩個發光裝置具有相近的尺寸比例(兩個尺寸比例的比值小於2，例如1.1、1.2、1.4與1.6)時，在發光裝置水平面上的邊長中的最短長度低於某個限制值，例如1.4mm時，發光裝置的發光強度會受到前述較短邊的長度的影響。舉例來說，當兩個發光裝置包含有同樣的發光元件2並具有相同的第一比例及/或第二比例，例如約為1：2的時候，當兩個發光裝置的短邊長度大於一限制值，例如1.4mm，兩個發光裝置的發光強度近似。但是在同樣比例下，水平面上的最短長度低於限制值的時候，例如兩個發光裝置的短邊長分別為1.3mm與1.0mm時，邊長為1.3mm的發光裝置的發光強度大約比邊長為1.0mm的發光裝置的發光強度多了至少百分之一。也就是具有同樣長短邊比例的兩個發光裝置，只要邊長都大於限制值的時候會具有近似的發光強度，例如兩個裝置的發光強度相差小於發光強度較大者的百分之一，但若是有其中一個發光裝置的邊長低於限制值時，兩個發光裝置的發光強度就有較為明顯的差異。 In the above embodiment, the size of the light-emitting element 2 and the transparent support element 4 have the same, similar or different ratios of length and/or width, and have similar heights, that is, the top surface 44 of the transparent support member 4 The distance between the light-emitting surfaces 24 of the light-emitting elements 2 is very close. For the light-emitting devices 100 and 200, the size of the light-emitting element 2 and the transparent support member 4 in the first direction on the horizontal plane has a first ratio, and in the second direction on the horizontal plane has a second ratio, wherein One direction is perpendicular to the second direction, and the first ratio may be greater than, equal to, or less than the second ratio. When the light-emitting element 2 has a rectangular shape, the first direction and the second direction respectively represent the direction of the long side of the light-emitting element 2 and the direction of the short side of the light-emitting element 2. In an embodiment, the first ratio and the second ratio are between about 1:1.04 and 1:7.1. In addition, when the two illuminating devices in the embodiment of the present invention have the same or similar first ratio and/or second ratio, and the length of the shorter side length in the horizontal plane on the horizontal plane is greater than a certain limit value, this The two illuminating devices have substantially the same luminous intensity. For example, the illuminating device A has a first ratio of 1:2.11 and a second ratio of 1:1.83, and a illuminating device B has a first ratio of 1:1.81 and a second ratio of 1:1.57. The difference between the luminous intensities of the two illumination devices is less than one percent of the luminous intensity of the illumination device A. In this embodiment, the two illuminating devices have similar first and second ratios, and the ratio of the first ratio is 1.16 (2.11/1.81=1.16). The ratio of the second ratio is 1.65 (1.83/1.57=1.65), and the ratio between the corresponding two ratios between the two illuminating devices is less than 2, and the difference in luminous intensity between the two illuminating devices is less than one percent. . If the two illuminating devices have similar size ratios (the ratio of the two size ratios is less than 2, such as 1.1, 1.2, 1.4 and 1.6), the shortest length in the side length on the horizontal plane of the illuminating device is lower than a certain limit value, For example, at 1.4 mm, the luminous intensity of the illuminating device is affected by the length of the aforementioned shorter side. For example, when two illuminating devices include the same illuminating element 2 and have the same first ratio and/or second ratio, for example, about 1:2, when the short side length of the two illuminating devices is greater than one The limit value, for example 1.4 mm, approximates the luminous intensity of the two illumination devices. However, at the same ratio, when the shortest length on the horizontal plane is lower than the limit value, for example, when the short side lengths of the two light-emitting devices are 1.3 mm and 1.0 mm, respectively, the luminous intensity of the light-emitting device having a side length of 1.3 mm is approximately higher than that of the side. The illuminating device having a length of 1.0 mm has an illuminating intensity of at least one percent. That is, two illuminating devices having the same length and short side ratios have an approximate illuminating intensity as long as the side length is greater than the limit value, for example, the illuminating intensity of the two devices differs by less than one percent of the illuminating intensity, but If the side length of one of the light-emitting devices is lower than the limit value, the luminous intensity of the two light-emitting devices has a significant difference.

第3圖為根據本發明實施例所揭露之發光裝置300發出的第二光線的光場分布示意圖，圖上的兩個曲線代表的是從兩個不同的方向量測光場分布的情況，在這兩個方向上光場的分布範圍約略介於-90°~+90°之間，而在其他實施例中，分布範圍約略介於178°~190°。兩個光場各自具有兩個峰部以及一個谷 部，並且光場約略以谷部為中心往兩側對稱分布。其中，兩個峰部大致對應第一區601且谷部大致對應第二區602。在其他實施例中，因第二區602凹陷的深度不同，影響發光元件2所發出的光行進方向，造成峰部的位置對應到發光裝置的位置會往遠離發光裝置中心的方向移動，甚至由原本對應到的第一區601向外移動到超出側邊62的範圍。但整體來說，發光裝置發出的第二光線的光場分布具有一最大值對應於第一區601以及一最小值對應於第二區602。在本實施例中，兩個光場各自的最大值與最小值的比值介於1.05~2倍之間。在本實施例中，因為沒有設置波長轉換材料，例如螢光粉，所以第一光線的波長之波峰值與第二光線的波長之波峰值相同。而在別的實施例中，不論是在發光元件2與透明支撐元件4之間設置有波長轉換材料，或者是在透明支撐元件4內有波長轉換材料存在，又或者光學元件6的內部、第一區601、第二區602與光學層8的任一或全部包含有波長轉換材料，都會使得第二光線與第一光線的波長之波峰值不同，而波長轉換材料可以是一層或多層相同或者相異的材料。同樣地，在別的實施例中波長轉換材料更包含有黏著層與具有增加亮度用途的增亮劑，例如二氧化矽。 3 is a schematic diagram of a light field distribution of a second light emitted by the light-emitting device 300 according to an embodiment of the invention. The two curves on the graph represent the measurement of the light field distribution from two different directions. The distribution of the light field in these two directions is approximately between -90° and +90°, while in other embodiments, the distribution range is approximately between 178° and 190°. Two light fields each have two peaks and one valley The light field is roughly distributed symmetrically on both sides centering on the valley. The two peaks generally correspond to the first zone 601 and the valleys correspond to the second zone 602. In other embodiments, because the depth of the recessed portion of the second region 602 is different, the direction of travel of the light emitted by the light-emitting element 2 is affected, and the position of the peak portion corresponding to the position of the light-emitting device is moved away from the center of the light-emitting device, or even The originally corresponding first zone 601 is moved outwardly beyond the extent of the side edge 62. In general, however, the light field distribution of the second light emitted by the illumination device has a maximum corresponding to the first region 601 and a minimum corresponding to the second region 602. In this embodiment, the ratio of the maximum value to the minimum value of each of the two light fields is between 1.05 and 2 times. In the present embodiment, since no wavelength converting material such as phosphor powder is provided, the peak value of the wavelength of the first light is the same as the peak value of the wavelength of the second light. In other embodiments, whether the wavelength conversion material is disposed between the light-emitting element 2 and the transparent support element 4, or the wavelength conversion material exists in the transparent support element 4, or the interior of the optical element 6, Any one or all of the first region 601, the second region 602, and the optical layer 8 include a wavelength converting material, which causes the second light to be different from the peak wavelength of the first light, and the wavelength converting material may be one or more layers of the same or Different materials. Similarly, in other embodiments the wavelength converting material further comprises an adhesive layer and a brightening agent for increased brightness use, such as cerium oxide.

第4a-4e圖為根據本發明實施例所揭露之光學元件6的上視圖，光學元件6為一個長方形並具有由第一區601與第二區602所形成的各種不同樣態。本實施例中，第一區601為平面區域，而第二區602則包含有凹陷區，並且選擇性地有光學層位於 其上。參考第4a圖，光學元件6的表面上有著位於兩個第一區601之間的第二區602，其中兩個第一區601是位在平行於光學元件6的長邊的方向上。參考第4b圖，光學元件6的表面有著位於兩個第一區601之間的第二區602，其中兩個第一區601是位在平行於光學元件6的短邊的方向上。在第4a-4b圖的實施例中，第二區602皆從光學元件6的一邊延伸到另一邊，例如第4a圖中第二區602是沿著光學元件6的短邊從一長邊延伸到另一長邊，在第4b圖中則是沿著光學元件6的長邊從一短邊延伸至另一短邊。而在別的實施例中，第二區602可以僅接觸到光學元件6的單一邊，或者並未接觸到光學元件6的任一邊。參考第4c圖，在光學元件6的表面上具有一個呈十字型的第二區602以及位於四個角落上的第一區601。第二區602包含一個沿著光學元件6長邊延伸的第二次區6021，以及一個沿著短邊延伸的第二次區6022。位於光學元件6表面上的四個角落的第一區601的面積可以相同或相異，而第二次區6021與6022的寬度可以相同或相異。參考第4d圖，在光學元件6的表面上具有六個第一區601以及一個將光學元件6的表面分隔成網格狀的第二區602。光學元件6表面上的六個第一區601的面積可以相同或相異，而第二區602則包含兩個沿著長邊延伸的第二次區6023與6024，以及一個沿著短邊延伸的第二次區6025，並且這三個第二次區的寬度也可以相同或者相異。在第4e圖的實施例中，表面有九個面積大致相同的第一區601以及一個將光學元件6的表面分隔成網格狀的第二區602，位於光學元件6 表面上的九個第一區601的面積可以相同或相異，而第二區602則包含兩個沿著長邊延伸的第二次區6026與6027，以及兩個沿著短邊延伸的第二次區6028與6029，並且這四個第二次區的寬度也可以相同或者相異。如前所述，在第4a-4e圖的各種實施例中，第一區601為平面區域，而第二區602則包含有凹陷區，並且選擇性地可以有光學層位於其上。更參考第2b圖的實施例，位於第二區602的光學層8可以是僅覆蓋第二區602，也可以接觸到第一區601，又或是覆蓋到第一區601的一部份。在別的實施例中，第一區601以及第二區602皆為平坦面，但僅第二區602有光學層8位於其上，而第一區601的上方沒有光學層。 4a-4e are top views of an optical element 6 according to an embodiment of the invention, the optical element 6 being rectangular and having various different states formed by the first zone 601 and the second zone 602. In this embodiment, the first region 601 is a planar region, and the second region 602 includes a recessed region, and optionally an optical layer is located. On it. Referring to Fig. 4a, the surface of the optical element 6 has a second region 602 between the two first regions 601, wherein the two first regions 601 are in a direction parallel to the long sides of the optical element 6. Referring to Fig. 4b, the surface of the optical element 6 has a second region 602 between the two first regions 601, wherein the two first regions 601 are in a direction parallel to the short sides of the optical element 6. In the embodiment of Figures 4a-4b, the second region 602 extends from one side of the optical element 6 to the other side, for example, the second region 602 in Figure 4a extends from a long side along the short side of the optical element 6. To the other long side, in Fig. 4b, the long side of the optical element 6 extends from one short side to the other short side. In other embodiments, the second region 602 may only contact a single side of the optical element 6 or may not contact either side of the optical element 6. Referring to Fig. 4c, a second region 602 having a cross shape and a first region 601 at four corners are provided on the surface of the optical member 6. The second zone 602 includes a second sub-region 6021 extending along the long side of the optical element 6, and a second sub-region 6022 extending along the short side. The areas of the first regions 601 located at the four corners on the surface of the optical element 6 may be the same or different, and the widths of the second sub-regions 6021 and 6022 may be the same or different. Referring to Figure 4d, there are six first regions 601 on the surface of the optical element 6 and a second region 602 that separates the surface of the optical element 6 into a grid. The area of the six first regions 601 on the surface of the optical element 6 may be the same or different, while the second region 602 includes two second sub-regions 6023 and 6024 extending along the long sides, and one extending along the short sides. The second sub-area 6025, and the widths of the three second sub-areas may also be the same or different. In the embodiment of Figure 4e, the surface has nine first regions 601 having substantially the same area and a second region 602 separating the surface of the optical element 6 into a grid, located in the optical element 6. The area of the nine first regions 601 on the surface may be the same or different, and the second region 602 includes two second sub-regions 6026 and 6027 extending along the long sides, and two segments extending along the short sides. The secondary regions 6028 and 6029, and the widths of the four second sub-regions may also be the same or different. As previously mentioned, in various embodiments of Figures 4a-4e, the first region 601 is a planar region and the second region 602 includes a recessed region, and optionally an optical layer can be located thereon. Referring further to the embodiment of FIG. 2b, the optical layer 8 located in the second region 602 may cover only the second region 602, may also contact the first region 601, or may cover a portion of the first region 601. In other embodiments, the first region 601 and the second region 602 are both flat surfaces, but only the second region 602 has the optical layer 8 thereon, and there is no optical layer above the first region 601.

第5a-5b圖為根據本發明實施例所揭露之光學元件6具有不同的第一區601與第二區602所形成的樣態的上視圖。參考第5a圖，位在光學元件6的表面的第二區602包含兩個相互不平行也不垂直的第二次區6030與6031，以及被第二區所分隔為具有不同面積的四個第一區601。而在第5b圖中，位在光學元件6的表面的第二區602則包含兩個平行的第二次區6033與6034，與不垂直也不平行於第二次區6033與6034的第二次區6032，以及被第二區602分割為六個不同面積的第一區601。在別的實施例中，第二次區6033與6034彼此相互不平行。 5a-5b are top views of the optical element 6 disclosed in accordance with an embodiment of the present invention having different first and second regions 601 and 602. Referring to Fig. 5a, the second region 602 located on the surface of the optical element 6 comprises two second sub-regions 6030 and 6031 which are not parallel or perpendicular to each other, and four regions separated by the second region to have different areas. One district 601. In Fig. 5b, the second region 602 located on the surface of the optical element 6 comprises two parallel second sub-regions 6033 and 6034, and is not perpendicular to or parallel to the second sub-region 6033 and 6034. The secondary zone 6032, and the first zone 601 divided by the second zone 602 into six different areas. In other embodiments, the second sub-regions 6033 and 6034 are not parallel to each other.

綜上所述，在光學元件6遠離發光元件2的表面上，可以依據需求形成各種不同的表面樣態，藉由相互垂直或者不垂直的第二次區將表面分成複數個面積相同或者不同的第一區 601，並且這些第二次區可以是分別平行或不平行於光學元件6的長邊與短邊。在別的實施例中，第二次區也可以是平行或不平行於光學元件6相鄰的兩邊。在光學元件6的表面上，被第二區602所分割所形成的複數個第一區601可以具有相同或是不同的面積，而第二區602也可以包含有相同或是不同面積的第二次區。第4a-4e圖與第5a-5b圖的實施例中，光學元件6不僅可以具有不同的表面樣態及更可以具有第1b圖的實施例中的斜邊。而位在光學元件6的第二區602也可以選擇性地包含有凹陷部或者光學層8形成於其上。 In summary, on the surface of the optical element 6 away from the light-emitting element 2, various surface states can be formed according to requirements, and the surface is divided into a plurality of areas of the same or different by a second sub-region that is perpendicular or non-perpendicular to each other. First district 601, and these second sub-regions may be parallel or non-parallel to the long and short sides of the optical element 6, respectively. In other embodiments, the second sub-region may also be parallel or non-parallel to the adjacent sides of the optical element 6. On the surface of the optical element 6, the plurality of first regions 601 formed by the second region 602 may have the same or different areas, and the second region 602 may also include the second or the same area. Sub-region. In the embodiments of Figures 4a-4e and 5a-5b, the optical element 6 may not only have different surface states but may also have beveled edges in the embodiment of Figure 1b. The second region 602 located at the optical element 6 may also optionally include a recess or an optical layer 8 formed thereon.

第6圖為根據本發明一實施例所揭露之一發光裝置300，發光裝置300包含一透明支撐元件4包覆發光元件2，與一位於透明支撐元件4之上的光學元件6，並且在光學元件6上覆蓋有光學層8，以及在發光元件2相對於光學元件6的另一側的反射板10。透明支撐元件4覆蓋著發光元件2並且具有一側壁42環繞透明支撐元件4與發光元件2、一頂面44介於發光元件2與光學元件6之間，以及一底面46。其中，底面46與發光元件2的接合面26共平面。在本實施例中，在底面46側的反射板10反射至少部分由發光元件2所發出的第一光線，並且部分被反射的第一光線會從側壁42離開發光裝置300。在某些實施例中，在反射板10上更包含有電路與發光元件2電性連接，或是在發光裝置300的透明支撐元件4內包含有波長轉換材料，並且這些波長轉換材料會被部分第一光線所激發。 FIG. 6 is a light emitting device 300 according to an embodiment of the invention. The light emitting device 300 includes a transparent supporting member 4 covering the light emitting element 2, and an optical element 6 on the transparent supporting member 4, and is optical. The element 6 is covered with an optical layer 8 and a reflecting plate 10 on the other side of the light-emitting element 2 with respect to the optical element 6. The transparent support member 4 covers the light-emitting element 2 and has a side wall 42 surrounding the transparent support member 4 and the light-emitting element 2, a top surface 44 interposed between the light-emitting element 2 and the optical element 6, and a bottom surface 46. The bottom surface 46 is coplanar with the joint surface 26 of the light-emitting element 2. In the present embodiment, the reflecting plate 10 on the side of the bottom surface 46 reflects at least a portion of the first light emitted by the light-emitting element 2, and the partially reflected first light exits the light-emitting device 300 from the side wall 42. In some embodiments, the reflective board 10 further includes a circuit electrically connected to the light emitting element 2, or a wavelength converting material is contained in the transparent supporting member 4 of the light emitting device 300, and the wavelength converting materials are partially The first light is excited.

第7a-7b圖為根據本發明一實施例所揭露之一發光裝置400，發光裝置400包含一透明支撐元件4包覆發光元件2，與一位於透明支撐元件4之上的光學元件6，並且在光學元件6上覆蓋有光學層8，以及在發光元件2相對於光學元件6的另一側具有第一絕緣層122、第二絕緣層124與第三絕緣層126，並且三個絕緣層之間互相不接觸。其中第一絕緣層122、第二絕緣層124與第三絕緣層126位於發光元件2的下方，其中第三絕緣層126與發光元件2相對應，例如位於發光元件2正下方，而第一絕緣層122與第二絕緣層124對應於側壁42並包含不位於發光元件2的下方的部分。第一絕緣層122、第二絕緣層124與第三絕緣層126的材料可以包含氧化物，例如二氧化鈦。接著參考第7b圖，在第一絕緣層122、第二絕緣層124與第三絕緣層126之上更覆蓋有第一電極142與第二電極144，使發光元件2得以藉由第一電極142與第二電極144與外部電路電性連接。第一電極142與第二電極144位於發光元件2遠離光學元件6的一側，且第一電極142與第二電極144之間具有空隙，並藉由第三絕緣層126使電極之間彼此電性隔絕。 7a-7b is a light emitting device 400 according to an embodiment of the invention, the light emitting device 400 includes a transparent supporting member 4 covering the light emitting element 2, and an optical element 6 above the transparent supporting member 4, and The optical element 8 is covered with an optical layer 8 and has a first insulating layer 122, a second insulating layer 124 and a third insulating layer 126 on the other side of the light-emitting element 2 with respect to the optical element 6, and three insulating layers Do not touch each other. The first insulating layer 122, the second insulating layer 124 and the third insulating layer 126 are located below the light emitting element 2, wherein the third insulating layer 126 corresponds to the light emitting element 2, for example, directly under the light emitting element 2, and the first insulation The layer 122 and the second insulating layer 124 correspond to the sidewall 42 and include a portion not located below the light-emitting element 2. The material of the first insulating layer 122, the second insulating layer 124, and the third insulating layer 126 may include an oxide such as titanium dioxide. Referring to FIG. 7b, the first insulating layer 122, the second insulating layer 124 and the third insulating layer 126 are further covered with the first electrode 142 and the second electrode 144, so that the light emitting element 2 can be passed through the first electrode 142. The second electrode 144 is electrically connected to an external circuit. The first electrode 142 and the second electrode 144 are located on a side of the light-emitting element 2 away from the optical element 6, and have a gap between the first electrode 142 and the second electrode 144, and the electrodes are electrically connected to each other by the third insulating layer 126. Sexual isolation.

第8圖為根據本發明一實施例所揭露之一發光裝置500，發光裝置500包含一透明支撐元件4包覆發光元件2，與一位於透明支撐元件4之上的光學元件6，以及在發光元件2相對於光學元件6的另一側具有第一絕緣層122、第二絕緣層124與第三絕緣層126。第一絕緣層122與第二絕緣層124各自有一部分被發 光元件2所覆蓋，而第三絕緣層126則位於發光元件2的下方，並且第三絕緣層126可以是部分或者全部被發光元件2所覆蓋，並且第一絕緣層122、第二絕緣層124與第三絕緣層126彼此互相不接觸。在本實施例中，透明支撐元件4更包含斜面480、482介於側壁42與底面46之間，並且斜面480、482從底面46向上延伸的垂直高度低於發光元件2的厚度，第一絕緣層122與第二絕緣層124則分別覆蓋斜面480、482與一部分的底面46。在其他實施例中，斜面480、482從向上延伸的垂直高度則高於發光元件2的厚度。發光裝置500中，斜邊64與66位於光學元件6側邊62之上並各自大致對應到斜面480與482，亦即斜面480與發光元件2的側面22之間的最短水平距離大約與斜邊64與發光元件2的側面22之間的最短水平距離相同，而斜面482與發光元件2的側面22之間的最短水平距離大約與斜邊66與發光元件2的側面22之間的最短水平距離相同。斜面480與側面22之間的最短水平距離以及斜面482與側面22之間的最短水平距離可以相同、相異或相近，而斜邊64、66在水平上距離側面22的最短距離也有類似的特性，在其他實施例中也可以是斜邊、斜面與側面之間的最長水平距離或者平均水平距離相同、相異或相近。在另一實施例中，斜面480和斜邊64在水平上與發光元件2的側面22距離也可以不相同，可以是水平上各自距離側面22最短距離或是最遠距離不同。第一絕緣層122、第二絕緣層124與第三絕緣層126的材料包含有氧化物，例如二氧化鈦。在本實施例中，第一絕緣層122、第二絕 緣層124與第三絕緣層126更可以做為反射層使用，藉以反射發光元件2所發出的光。因此在發光裝置500中，透明支撐元件4包覆發光元件2，並且與透明支撐元件4相連的第一絕緣層122與第二絕緣層124可以作為反射層使用，並具有一水平位置低於或約等於發光元件2的高度。而本實施例中，透明支撐元件4具有上寬下窄(連接光學元件6的一側較寬，連接絕緣層的一側較窄)的外型與斜面480、482。本實施例中，更在斜面480、482上覆蓋有第一絕緣層122與第二絕緣層124。 FIG. 8 is a light emitting device 500 according to an embodiment of the invention. The light emitting device 500 includes a transparent supporting member 4 covering the light emitting element 2, and an optical element 6 on the transparent supporting member 4, and is illuminated. The element 2 has a first insulating layer 122, a second insulating layer 124 and a third insulating layer 126 with respect to the other side of the optical element 6. A portion of each of the first insulating layer 122 and the second insulating layer 124 is emitted The light element 2 is covered, and the third insulating layer 126 is located under the light emitting element 2, and the third insulating layer 126 may be partially or entirely covered by the light emitting element 2, and the first insulating layer 122 and the second insulating layer 124 The third insulating layer 126 is not in contact with each other. In this embodiment, the transparent support member 4 further includes a slope 480, 482 between the sidewall 42 and the bottom surface 46, and the vertical height of the slope 480, 482 extending upward from the bottom surface 46 is lower than the thickness of the light-emitting element 2, the first insulation The layer 122 and the second insulating layer 124 respectively cover the slopes 480, 482 and a portion of the bottom surface 46. In other embodiments, the vertical height of the ramps 480, 482 extending upward is higher than the thickness of the light-emitting element 2. In the illumination device 500, the oblique sides 64 and 66 are located on the side 62 of the optical element 6 and each substantially correspond to the slopes 480 and 482, that is, the shortest horizontal distance between the slope 480 and the side 22 of the light-emitting element 2 is approximately oblique to the oblique side. 64 has the same shortest horizontal distance from the side 22 of the light-emitting element 2, and the shortest horizontal distance between the slope 482 and the side 22 of the light-emitting element 2 is approximately the shortest horizontal distance between the oblique side 66 and the side 22 of the light-emitting element 2. the same. The shortest horizontal distance between the ramp 480 and the side 22 and the shortest horizontal distance between the ramp 482 and the side 22 may be the same, different or similar, and the shortest distance of the bevel 64, 66 from the side 22 in the horizontal direction has similar characteristics. In other embodiments, the longest horizontal distance or the average horizontal distance between the oblique side, the inclined surface and the side surface may be the same, different or similar. In another embodiment, the slope 480 and the oblique side 64 may be different from the side surface 22 of the light-emitting element 2 in the horizontal direction, and may be horizontally different from the shortest distance or the longest distance from the side surface 22. The material of the first insulating layer 122, the second insulating layer 124, and the third insulating layer 126 contains an oxide such as titanium dioxide. In this embodiment, the first insulating layer 122 and the second insulating layer The edge layer 124 and the third insulating layer 126 can be used as a reflective layer to reflect the light emitted by the light-emitting element 2. Therefore, in the light-emitting device 500, the transparent supporting member 4 covers the light-emitting element 2, and the first insulating layer 122 and the second insulating layer 124 connected to the transparent supporting member 4 can be used as a reflective layer and have a horizontal position lower than or It is approximately equal to the height of the light-emitting element 2. In the present embodiment, the transparent supporting member 4 has an outer shape and a slope 480, 482 which are wide in width and narrow in width (the side on which the optical element 6 is connected is wide, and the side on which the insulating layer is connected is narrow). In this embodiment, the first insulating layer 122 and the second insulating layer 124 are covered on the slopes 480 and 482.

在第一絕緣層122、第二絕緣層124與第三絕緣層126之上覆蓋有第一電極142與第二電極144，使發光元件2得以藉由第一電極142與第二電極144與外部電路電性連接。第一絕緣層122位於第一電極142與透明支撐元件4之間，第二絕緣層124位於第二電極144與透明支撐元件4之間。第一電極142與第二電極144往外延伸至透明支撐元件4的側面42，並且第一絕緣層122與第二絕緣層124也從發光元件2延伸至側面42。發光元件2的n型半導體層與p型半導體層則分別藉由第一電極142與第二電極144與外部電路電性連接，並且第一電極142與第二電極144位於發光元件2遠離光學元件6的一側。其中第一電極142與第二電極144之間具有空隙位於第三絕緣層126相對於發光元件2的一側，避免電極之間電性連結造成短路，更藉由第三絕緣層126電性隔絕兩個電極。第一電極142與第二電極144從被發光元件2所覆蓋的部分向外延伸到透明支撐元件4的下方，此時向外延伸 的部分便不被發光元件2所覆蓋。 The first insulating layer 122, the second insulating layer 124 and the third insulating layer 126 are covered with the first electrode 142 and the second electrode 144, so that the light emitting element 2 can be externally connected by the first electrode 142 and the second electrode 144. The circuit is electrically connected. The first insulating layer 122 is located between the first electrode 142 and the transparent support member 4, and the second insulating layer 124 is located between the second electrode 144 and the transparent support member 4. The first electrode 142 and the second electrode 144 extend outward to the side 42 of the transparent support member 4, and the first insulating layer 122 and the second insulating layer 124 also extend from the light emitting element 2 to the side surface 42. The n-type semiconductor layer and the p-type semiconductor layer of the light-emitting element 2 are electrically connected to the external circuit by the first electrode 142 and the second electrode 144, respectively, and the first electrode 142 and the second electrode 144 are located at the light-emitting element 2 away from the optical element. One side of 6. The gap between the first electrode 142 and the second electrode 144 is located on the side of the third insulating layer 126 relative to the light-emitting element 2, so as to avoid short-circuiting between the electrodes, and is electrically insulated by the third insulating layer 126. Two electrodes. The first electrode 142 and the second electrode 144 extend outward from a portion covered by the light-emitting element 2 to below the transparent support member 4, and extend outward at this time. The portion is not covered by the light-emitting element 2.

第9a-9h為根據本發明實施例的發光裝置製造方法之流程圖，參考第9a圖，複數個發光元件2位於一載板20上，每一個發光元件2被透明支撐元件4覆蓋，彼此之間也以透明支撐元件4隔離。載板20為一承載裝置，以提供發光元件2支撐以及供後續製程操作，可以是硬質材料，例如陶瓷或藍寶石基板，也可以是具有彈性的材料，例如玻璃纖維或三氮雜苯樹脂(BT)。在其他實施例中，透明支撐元件4的形成是先覆蓋一層第一透明材料，接著於第一透明材料之上再覆蓋一波長轉換材料，而波長轉換材料可選擇性地被包覆在一第二透明材料之內，接著再於波長轉換材料之上再覆蓋一第三透明材料。因此，透明支撐元件4內由載板20往遠離載板20的方向依序可以包含有第一透明材料、波長轉換材料與第三透明材料，或者可以是第一透明材料、第二透明材料與波長轉換材料的混合物以及第三透明材料，並且第一透明材料、第二透明材料以及第三透明材料的材料可以由同一材料組成，或者由兩種或以上的材料組成，例如三個透明材料同為環氧樹脂(Epoxy)或者三個透明材料各自包含有環氧樹脂(Epoxy)及矽氧樹脂(Silicone)；又或者各透明材料由具有相同化學元素，但不同的化學組成或比例的材料組成。 9a-9h are flowcharts of a method of fabricating a light-emitting device according to an embodiment of the present invention. Referring to FIG. 9a, a plurality of light-emitting elements 2 are disposed on a carrier 20, and each of the light-emitting elements 2 is covered by a transparent support member 4, and each other They are also isolated by a transparent support element 4. The carrier 20 is a carrier device for providing support for the light-emitting element 2 and for subsequent processing operations, and may be a hard material such as a ceramic or sapphire substrate, or a material having elasticity such as glass fiber or triazine resin (BT). ). In other embodiments, the transparent support member 4 is formed by first covering a first transparent material, and then overlying the first transparent material with a wavelength converting material, and the wavelength converting material is selectively coated in a first Within the two transparent materials, a third transparent material is then overlaid over the wavelength converting material. Therefore, the transparent support member 4 may sequentially include the first transparent material, the wavelength conversion material and the third transparent material from the direction of the carrier 20 away from the carrier 20, or may be the first transparent material and the second transparent material. a mixture of wavelength converting materials and a third transparent material, and the materials of the first transparent material, the second transparent material, and the third transparent material may be composed of the same material or composed of two or more materials, for example, three transparent materials Epoxy or three transparent materials each contain epoxy (Epoxy) and silicone (Silicone); or each transparent material is composed of materials having the same chemical elements but different chemical compositions or ratios. .

在其他實施例中，載板20與發光元件2之間更包含一層黏著層強化兩者之間的附著強度。此外，載板20與發光元件2之間可以未完全密合，即形成透明支撐元件4時，部分材料會流 入發光元件2與載板20之間，造成發光元件2不完全直接接觸載板20而有部分透明支撐元件4位於載板20與發光元件2之間。參考第9b-9c圖，覆蓋光學元件6於發光元件2之上後移除載板20，而在光學元件6與發光元件2之間可形成一黏著層(未繪示於圖中)，使得光學元件6在後續流程中不易與發光元件2剝離，並且黏著層的材料可以跟透明支撐元件4的材料相同或者相異。參考第9d圖，在透明支撐元件4上形成切割道80、82與84，透過切割道80、82與84用來分離任兩個位於切割道兩側的發光單元，例如9d圖中的切割道84可以分離圖中的的兩個發光元件2，並且切割道並未接觸光學元件6，也就是在切割道與光學元件6之間還有透明支撐元件4的存在，而每一個發光元件2位於兩個切割道之間。參考第9e圖，以一個發光元件2，於發光元件2的相對於光學元件6的一側形成第一絕緣層122、第二絕緣層124與第三絕緣層126。其中填入切割道80與82的絕緣材料形成第一絕緣層122與第二絕緣層124，而覆蓋於發光元件2之上的絕緣材料則形成第三絕緣層126。在第9d與9e圖中，切割道80、82與84的形成可以是透過固態的刀具，例如金屬刀或塑膠刀，或者是雷射與蝕刻等製程在透明支撐元件4的表面上形成具有相同、相異或相近的深度與寬度的切割道。因為切割道形成的方法不同，因此在透明支撐元件4的表面上可以是平坦或者粗糙的。在本實施例中，複數個絕緣層的厚度與寬度也可以相同或者相異，並且絕緣層的表面也可以是平坦的區域或者是粗糙的區域。參考第9f-9g圖，在第 一絕緣層122、第二絕緣層124與第三絕緣層126之間覆蓋第一電極142與第二電極144，提供發光元件2與外部電路電性連接的路徑，其中第一電極142與第二電極144各自具有一部份接觸第一絕緣層122與第二絕緣層124但不與發光元件2重疊，其中第一絕緣層122位於第一電極142與透明支撐元件4之間，第二絕緣層124位於第二電極144與透明支撐元件4之間，以及第三絕緣層126與底面46以及發光元件2的接合面26相接，並且第一電極142與第二電極144的厚度與長度可以相同或相異。接著於光學元件6遠離發光元件2的一側形成切割道86與88，所使用的方法包含但不僅限於前述形成切割道的方法，使切割道86與88的位置大約對應切割道80與82，並且切割道86與88也不會接觸到透明支撐元件4，也就是不僅切割道80與82不會切穿透明支撐元件4，切割道86與88也不會切穿光學元件6。接著沿切割道80、82、86與88以劈裂或切割等方式形成如第9h圖中的發光裝置500，並同時產生斜邊64與66，其中斜邊64與66可以是平整面或者粗糙面。第9h圖中的發光裝置500，相較於第6圖中的發光裝置300或第1a-1b圖中的發光裝置100而言，發光裝置500中發光元件2所發出的光除了部分直接經由透明支撐元件4的頂面44離開光學元件6，更有一部分是先經由接觸著斜面480、482的第一絕緣層122與第二絕緣層124所反射，再經由透明支撐元件4的頂面44離開光學元件6，造成發光元件2發出的光線所形成的光場，與發光裝置500發出的光線的光場不同。本實施例中，絕緣層122、124不僅 提供電極之間的電性絕緣功用，更提供了反射層的功能。因此相較於發光裝置100或發光裝置300而言，發光裝置500中發光元件2所發出的光經過透明支撐元件4的側壁42離開發光裝置的光較少，亦即發光裝置500具有更高比例的光在發光元件2往頂面44的方向，而提供更好的指向性。並且發光裝置500發出的光線具有一光場分布，而光場分布更具有一最大值大致對應斜面480、482以及一最小值大致對應底面46。 In other embodiments, the carrier 20 and the light-emitting element 2 further comprise an adhesive layer to strengthen the adhesion between the two. In addition, the carrier 20 and the light-emitting element 2 may not be completely adhered together, that is, when the transparent support member 4 is formed, part of the material may flow. Between the light-emitting element 2 and the carrier 20, the light-emitting element 2 is not completely in direct contact with the carrier 20 and a portion of the transparent support element 4 is located between the carrier 20 and the light-emitting element 2. Referring to Figures 9b-9c, after the cover optical element 6 is over the light-emitting element 2, the carrier 20 is removed, and an adhesive layer (not shown) may be formed between the optical element 6 and the light-emitting element 2, such that The optical element 6 is not easily peeled off from the light-emitting element 2 in the subsequent flow, and the material of the adhesive layer may be the same as or different from the material of the transparent support member 4. Referring to Figure 9d, scribe lines 80, 82 and 84 are formed on the transparent support member 4, and the scribe lines 80, 82 and 84 are used to separate any two light-emitting units located on both sides of the scribe line, such as the dicing road in Figure 9d. 84 can separate the two illuminating elements 2 in the figure, and the scribe line does not contact the optical element 6, that is, there is also the presence of a transparent supporting element 4 between the scribe line and the optical element 6, and each of the illuminating elements 2 is located Between two cutting passes. Referring to Fig. 9e, a first insulating layer 122, a second insulating layer 124 and a third insulating layer 126 are formed on one side of the light-emitting element 2 with respect to the optical element 6 by a light-emitting element 2. The insulating material filled in the scribe lines 80 and 82 forms the first insulating layer 122 and the second insulating layer 124, and the insulating material overlying the light-emitting element 2 forms the third insulating layer 126. In Figures 9d and 9e, the scribe lines 80, 82 and 84 may be formed by a solid-state cutter, such as a metal knife or a plastic knife, or a process such as laser and etching having the same shape on the surface of the transparent support member 4. , different or similar depth and width of the cutting path. Since the method of forming the dicing streets is different, it may be flat or rough on the surface of the transparent supporting member 4. In this embodiment, the thickness and width of the plurality of insulating layers may also be the same or different, and the surface of the insulating layer may also be a flat region or a rough region. Refer to Figure 9f-9g, in the first An insulating layer 122, a second insulating layer 124 and a third insulating layer 126 cover the first electrode 142 and the second electrode 144, and provide a path for the light-emitting element 2 to be electrically connected to the external circuit, wherein the first electrode 142 and the second electrode The electrodes 144 each have a portion that contacts the first insulating layer 122 and the second insulating layer 124 but does not overlap with the light emitting element 2, wherein the first insulating layer 122 is located between the first electrode 142 and the transparent supporting member 4, and the second insulating layer 124 is located between the second electrode 144 and the transparent supporting member 4, and the third insulating layer 126 is in contact with the bottom surface 46 and the bonding surface 26 of the light emitting element 2, and the thickness and length of the first electrode 142 and the second electrode 144 may be the same. Or different. The dicing streets 86 and 88 are then formed on the side of the optical element 6 remote from the illuminating element 2, the method used including, but not limited to, the aforementioned method of forming a scribe line such that the positions of the dicing streets 86 and 88 correspond approximately to the dicing streets 80 and 82, Also, the dicing streets 86 and 88 do not contact the transparent support member 4, that is, not only the dicing streets 80 and 82 do not cut through the transparent support member 4, but the dicing streets 86 and 88 also do not cut through the optical member 6. The illuminating device 500 as shown in Fig. 9h is then formed along the dicing streets 80, 82, 86 and 88 by splitting or cutting, etc., and at the same time the beveled edges 64 and 66 are produced, wherein the beveled edges 64 and 66 may be flat or rough. surface. In the illuminating device 500 in FIG. 9h, the light emitted by the illuminating element 2 in the illuminating device 500 is partially transparent except for the illuminating device 300 in FIG. 6 or the illuminating device 100 in the first 1-1b diagram. The top surface 44 of the support member 4 exits the optical element 6, a portion of which is first reflected by the first insulating layer 122 and the second insulating layer 124 that contact the ramps 480, 482, and then exits through the top surface 44 of the transparent support member 4. The optical element 6 causes the light field formed by the light emitted from the light-emitting element 2 to be different from the light field of the light emitted by the light-emitting device 500. In this embodiment, the insulating layers 122 and 124 are not only Provides electrical insulation between the electrodes and provides the function of a reflective layer. Therefore, compared with the light-emitting device 100 or the light-emitting device 300, the light emitted by the light-emitting element 2 in the light-emitting device 500 passes through the side wall 42 of the transparent support member 4, and the light from the light-emitting device is less, that is, the light-emitting device 500 has a higher proportion. The light is in the direction of the light-emitting element 2 toward the top surface 44 to provide better directivity. And the light emitted by the light-emitting device 500 has a light field distribution, and the light field distribution has a maximum value corresponding to the slopes 480, 482 and a minimum value corresponding to the bottom surface 46.

第10a圖為根據本發明一實施例所揭露之一發光裝置600，發光裝置600包含一透明支撐元件4形成於發光元件2之上。透明支撐元件4覆蓋著發光元件2，並且具有一側壁42環繞透明支撐元件4與發光元件2，一頂面44覆蓋發光元件2但不接觸發光元件2，以及一底面46。底面46包含與接合面26共平面的部分以及往透明支撐元件4頂面44延伸的斜面，而側壁42則垂直於頂面44以及底面46中與發光元件2的接合面26共平面的部分。在本實施例中，底面46透過一斜面與側壁42相連，而在別的實施例中底面46水平式的向兩側延伸至側壁42的延伸線上，並直接與側壁42相連。在其他實施例中，發光元件2的接合面26與底面46不共平面，也就是部分透明支撐元件4位於發光元件2的接合面26與底面46之間。第一絕緣層122、第二絕緣層124與第三絕緣層126則位於透明支撐元件4的底面46與發光元件2的接合面26的一側，並在絕緣層之間具有第一電極142與第二電極144。第一絕緣層122與第二絕緣層124覆蓋著斜面，並提供反射 的功能以改變光行進的方向進而改變光場。本實施例中，透明支撐元件4之上同樣可以包含有第一區與第二區，並同樣可以具有但不僅限於第4a-4e圖或5a-5b圖之內容所揭示的光學元件6上的各種組成態樣，可以是包含平坦的第一區以及凹陷的第二區，並且在第二區上可以選擇性的覆蓋光學層8；或是覆蓋光學層8的第二區，以及未被光學層8所覆蓋的第一區。參考第10b圖，透明支撐元件4不僅可以有不同的樣態在頂面44上，也可以在頂面44上往靠近側壁42的地方形成一個斜面連接到側壁42。並且在第10b圖的實施例中，同樣可以在頂面44上具有各種不同的樣態，並根據所需要產生的光場在頂面44上設計不同的表面及/或斜面連接側壁42。 FIG. 10a is a light emitting device 600 according to an embodiment of the invention. The light emitting device 600 comprises a transparent supporting member 4 formed on the light emitting element 2. The transparent support member 4 covers the light-emitting element 2 and has a side wall 42 surrounding the transparent support member 4 and the light-emitting element 2, a top surface 44 covering the light-emitting element 2 but not contacting the light-emitting element 2, and a bottom surface 46. The bottom surface 46 includes a portion that is coplanar with the joint surface 26 and a slope that extends toward the top surface 44 of the transparent support member 4, while the sidewall 42 is perpendicular to the portion of the top surface 44 and the bottom surface 46 that is coplanar with the joint surface 26 of the light-emitting element 2. In the present embodiment, the bottom surface 46 is connected to the side wall 42 through a sloped surface. In other embodiments, the bottom surface 46 extends horizontally to both sides to the extension of the side wall 42 and is directly connected to the side wall 42. In other embodiments, the engagement surface 26 of the illuminating element 2 is not coplanar with the bottom surface 46, that is, the partially transparent support element 4 is located between the engagement surface 26 and the bottom surface 46 of the illuminating element 2. The first insulating layer 122, the second insulating layer 124 and the third insulating layer 126 are located on one side of the bottom surface 46 of the transparent supporting member 4 and the bonding surface 26 of the light-emitting element 2, and have a first electrode 142 between the insulating layers. Second electrode 144. The first insulating layer 122 and the second insulating layer 124 cover the slope and provide reflection The function is to change the direction in which the light travels and thereby change the light field. In this embodiment, the transparent support member 4 may also include the first region and the second region, and may also have, but are not limited to, the optical element 6 disclosed in the contents of FIG. 4a-4e or 5a-5b. The various compositional aspects may be a second region comprising a flat first region and a recess, and may selectively cover the optical layer 8 on the second region; or cover the second region of the optical layer 8, and be optically The first zone covered by layer 8. Referring to Fig. 10b, the transparent support member 4 may not only have a different shape on the top surface 44, but may also be formed on the top surface 44 to be adjacent to the side wall 42 to form a beveled surface to the side wall 42. Also in the embodiment of Fig. 10b, it is equally possible to have a variety of different aspects on the top surface 44 and to design different surfaces and/or beveled side walls 42 on the top surface 44 depending on the desired light field.

第11圖為根據本發明之另一實施例所揭露之光學元件6的上視圖。在本實施例中，光學元件6為一長方形，其中光學元件6的表面為平面區域，並可分為第一區601與第二區604，第二區604上覆蓋有光學層。第11圖中，第二區大致位於光學元件6表面的中心位置且為一圓形，因此第二區604的圓心大致位於光學元件6表面的幾何中心。第二區604的形狀除了圓形之外，也可以是橢圓形、矩形、多邊形、十字形或是輪廓包含有平滑曲線的多邊形，或者是第4a-4e與5a-5b圖中所顯示的第二次區的各種樣態，但其中第二區604的幾何中心大致與光學元件6表面的幾何中心相重疊，並且選擇性地具有以幾何中心彼此對稱的輪廓。覆蓋在第二區604的光學層利用材料的反射性改變發光元件2 所發出來的光的行進路線，相較於包含氧化矽的光學元件6，光學層更包含有不同於光學元件6的材料。其光學層的材料可以是金屬例如銀或者鋁，或是氧化物，例如氧化鈦。其中，金屬材料的選擇使用製程中較不會與環境中其他材料發生反應的金屬，例如製程環境中含有硫的情況下就避免選擇銀，以免產生硫化銀等包含硫與銀的化合物。光學層也可以是多層結構，例如分散式布拉格反射鏡(Distributed Bragg reflector；DBR)，而材料可以是氧化物的疊層，例如氧化鈦(TiO2)與(SiO2)的疊層；或是金屬與金屬氧化物的疊層，例如鋁與氧化鋁的疊層，以達到反射的效果。在其他實施例中，光學層的材料更可以包含有波長轉換材料。在本實施例中，不論是單層結構或者多層結構，都不會完全反射光線，因此至少有部分的光線會直接穿過光學層。在別的實施例中，可以透過增加厚度或者多層結構的層數使光線不直接穿過光學層以增加反射的效果；或是加入散射粒子，讓光線可以經散射粒子散射之後再離開發光裝置。透過光學層的設置，會形成類似第3圖所示的光場分布示意圖，使得光場分布具有一最大值對應於第一區601以及一最小值對應於第二區604。在本實施例中第二區604為一平面，但在別的實施例中第二區604包含有粗糙面，並且粗糙面上可以有規則或者不規則的突起以增加散射或反射的效果。由於第二區604上覆蓋有光學層，發光元件2發出的光線不會特別集中於某一方向上，因此可避免或減輕發光裝置產生光暈的情況。在別的實施例中，當透明支撐元件4內包含有波長轉換材料 時，波長轉換材料受激發後發出的光線也會被位於第二區604的光學層所反射或散射使得光線不會集中於某個區域，因此避免了光暈的發生。相同地，光學元件6上也可以有斜邊64與66，並與第二區604上的光學層一同提供光學效果。 Figure 11 is a top plan view of an optical element 6 in accordance with another embodiment of the present invention. In the present embodiment, the optical element 6 is a rectangle, wherein the surface of the optical element 6 is a planar area, and can be divided into a first area 601 and a second area 604, and the second area 604 is covered with an optical layer. In Fig. 11, the second region is located substantially at the center of the surface of the optical element 6 and is circular, so that the center of the second region 604 is located substantially at the geometric center of the surface of the optical element 6. The shape of the second zone 604 may be an ellipse, a rectangle, a polygon, a cross, or a polygon having a smooth curve, or a number shown in FIGS. 4a-4e and 5a-5b. The various states of the secondary zone, but wherein the geometric center of the second zone 604 substantially overlaps the geometric center of the surface of the optical element 6, and optionally have a profile that is symmetrical to each other at the geometric center. The optical layer covering the second region 604 changes the light-emitting element 2 by the reflectivity of the material The path of the emitted light is further comprised of a material different from the optical element 6 as compared to the optical element 6 comprising yttria. The material of the optical layer may be a metal such as silver or aluminum, or an oxide such as titanium oxide. Among them, the choice of metal materials uses metals that do not react with other materials in the environment, such as sulfur in the process environment, so as to avoid the formation of compounds containing sulfur and silver such as silver sulfide. The optical layer may also be a multilayer structure, such as a Distributed Bragg reflector (DBR), and the material may be a stack of oxides, such as a stack of titanium oxide (TiO2) and (SiO2); or a metal and A laminate of metal oxides, such as a laminate of aluminum and aluminum oxide, to achieve a reflective effect. In other embodiments, the material of the optical layer may further comprise a wavelength converting material. In this embodiment, the light is not completely reflected by either the single layer structure or the multilayer structure, so that at least part of the light passes directly through the optical layer. In other embodiments, the thickness of the layer or the number of layers of the multilayer structure may be increased to prevent the light from passing directly through the optical layer to increase the reflection effect; or the scattering particles may be added to allow the light to be scattered by the scattering particles before leaving the light emitting device. Through the arrangement of the optical layers, a schematic diagram of the light field distribution similar to that shown in FIG. 3 is formed such that the light field distribution has a maximum corresponding to the first region 601 and a minimum corresponding to the second region 604. In the present embodiment, the second zone 604 is a flat surface, but in other embodiments the second zone 604 includes a roughened surface, and the roughened surface may have regular or irregular protrusions to increase the effect of scattering or reflection. Since the second region 604 is covered with the optical layer, the light emitted from the light-emitting element 2 is not particularly concentrated in a certain direction, so that the occurrence of halation of the light-emitting device can be avoided or reduced. In other embodiments, the wavelength conversion material is included in the transparent support member 4. At the time, the light emitted by the wavelength converting material after being excited is also reflected or scattered by the optical layer located in the second region 604 so that the light is not concentrated in a certain region, thereby avoiding the occurrence of halation. Similarly, the optical element 6 can also have beveled edges 64 and 66 and provide optical effects along with the optical layer on the second zone 604.

第12圖為根據本發明一實施例所揭露之一發光裝置700，發光裝置700包含一透明支撐元件4形成於發光元件2之上。透明支撐元件4覆蓋著發光元件2，而光學元件6位於透明支撐元件4之上。光學層12位於光學元件6與透明支撐元件4之間，而第一絕緣層122、第二絕緣層124與第三絕緣層126位於發光元件2相對於光學層12的一側，並在絕緣層之間具有第一電極142與第二電極144與發光元件2電性連接。光學層12可以是單層或者多層結構，材料的組成包括但不限於第11圖的實施例中覆蓋在第二區604上的材料。本實施例中，光學層12為一多層結構，例如DBR結構，組成的成分則可以是金屬與金屬、金屬與氧化物或氧化物與氧化物的疊層，例如氧化鈦與的疊層，並且光學層12具有如第13a~13b圖所示的光學特性。光學層12在入射波長之波峰值420~750nm之間，具有約略100%的反射率，可以反射發光元件2發出的光，包含紅光、黃光、藍光以及綠光。光學層12在350~420nm以及大於750nm的部分則幾乎不反射。如第13a圖所示，光學層12可進一步包含第一光學層1201與第二光學層1202，並且第一光學層1201在420~600nm之間而第二光學層1202在550~750nm之間各自具有約略100%的反射率，藉由兩個光學層的組合提供如第13a 圖的光學效果。在第13b圖中，光學層12由第一光學層1201、第二光學層1202與第三光學層1203組成，三個光學層各自具有不同的光學特性，堆疊後具有在420~750nm之間反射率約略100%的光學特性。第13a~13b圖所示為根據本發明實施例的光學層之光學特性示意圖，其中第一光學層1201、第二光學層1202與第三光學層1203的厚度不同，而在其他實施例中，上述的三個光學層各自的厚度相同。更在其他實施例中，光學層12可以是由三層以上厚度相同或者不同的材料層所組成。光學層12所包含的複數個材料層各自具有不同的光學特性，並且可以在同樣的波長範圍內提供類似的反射率，例如第13a圖中，第一光學層1201與第二光學層1202在550~600nm之間都具有約略100%的反射率。在其他實施例中，光學層12更可以在380~980nm之間具有約略100%反射率的光學特性。當光線入射到光學層12的角度增加時，例如大於90度或者大於110度的時候，光學層12對於可以反射的光波長降低。以原本入射到光學層12的光線為紅光搭配藍光的白光為例，當入射角度增加的時候，紅光成分(波長之波峰值大於藍光)不會被反射。換言之，將光學層能提供約略100%反射率的波長範圍增加，例如增加到980nm的情況，可以改善上述在大角度入射情況下無法反射紅光的情況。 FIG. 12 is a light emitting device 700 according to an embodiment of the invention. The light emitting device 700 includes a transparent supporting member 4 formed on the light emitting element 2. The transparent support element 4 covers the light-emitting element 2, while the optical element 6 is situated above the transparent support element 4. The optical layer 12 is located between the optical element 6 and the transparent support member 4, and the first insulating layer 122, the second insulating layer 124 and the third insulating layer 126 are located on the side of the light-emitting element 2 with respect to the optical layer 12, and are in the insulating layer. The first electrode 142 and the second electrode 144 are electrically connected to the light-emitting element 2 . The optical layer 12 can be a single layer or a multilayer structure, and the composition of the material includes, but is not limited to, the material overlying the second region 604 in the embodiment of FIG. In this embodiment, the optical layer 12 is a multi-layer structure, such as a DBR structure, and the composition of the composition may be a metal and a metal, a metal and an oxide or a stack of an oxide and an oxide, such as a laminate of titanium oxide. And the optical layer 12 has optical characteristics as shown in Figs. 13a to 13b. The optical layer 12 has a reflectance of about 100% between peaks of incident wavelengths of 420 to 750 nm, and can reflect light emitted from the light-emitting element 2, including red light, yellow light, blue light, and green light. The portion of the optical layer 12 that is 350 to 420 nm and larger than 750 nm is hardly reflected. As shown in FIG. 13a, the optical layer 12 may further include a first optical layer 1201 and a second optical layer 1202, and the first optical layer 1201 is between 420 and 600 nm and the second optical layer 1202 is between 550 and 750 nm. Has a reflectivity of approximately 100%, provided by a combination of two optical layers as in 13a The optical effect of the figure. In Fig. 13b, the optical layer 12 is composed of a first optical layer 1201, a second optical layer 1202 and a third optical layer 1203. The three optical layers each have different optical characteristics, and have a reflection between 420 and 750 nm after stacking. The rate is approximately 100% optical. 13a-13b are schematic views showing optical characteristics of an optical layer according to an embodiment of the present invention, wherein the first optical layer 1201, the second optical layer 1202 and the third optical layer 1203 have different thicknesses, and in other embodiments, Each of the above three optical layers has the same thickness. In still other embodiments, the optical layer 12 can be composed of three or more layers of material having the same or different thicknesses. The plurality of material layers included in the optical layer 12 each have different optical characteristics and can provide similar reflectance in the same wavelength range. For example, in FIG. 13a, the first optical layer 1201 and the second optical layer 1202 are at 550. Between ~600nm has a reflectivity of approximately 100%. In other embodiments, the optical layer 12 may have an optical characteristic of approximately 100% reflectivity between 380 and 980 nm. When the angle at which light is incident on the optical layer 12 increases, for example, greater than 90 degrees or greater than 110 degrees, the optical layer 12 decreases in wavelength for light that can be reflected. Taking the white light originally incident on the optical layer 12 as red light and blue light as an example, when the incident angle is increased, the red light component (the wavelength peak of the wavelength is larger than the blue light) is not reflected. In other words, increasing the wavelength range in which the optical layer can provide about 100% reflectance, for example, increasing to 980 nm, can improve the above-described situation in which red light cannot be reflected at a large angle of incidence.

在第12圖的實施例中，光學層12實質上覆蓋整個發光裝置700的橫截面，也代表光學層覆蓋發光元件2、第一絕緣層122、第二絕緣層124與第三絕緣層126，使得發光元件2發出 的光線在經過光學元件6之前必然經過光學層12，而被光學層12反射的部份也會於被絕緣層反射後，經過側壁42離開發光裝置700。因此，對發光裝置700而言，所形成的光場在水平方向的各個角度上具有類似的光強度。在其他實施例中，當發光裝置700在所設置的水平面上具有相同的長度與寬度的情況下，所形成的光場會呈現明顯的對稱性。透明支撐元件4更可以包含波長轉換材料，使得部分波長轉換材料被發光元件2發出的光激發產生光線，這些光線部分被光學層12反射到絕緣層，再經絕緣層的反射從側壁42離開發光裝置700。在透明支撐元件4包含波長轉換材料的情況下，更由於光學層12覆蓋整個發光裝置700，使發光裝置700從上視不會觀察到波長轉換材料的存在。由於發光裝置700在各角度上的光強度類似，使發光裝置各角度上的顏色(color over angle；COA)也相當一致。 In the embodiment of FIG. 12, the optical layer 12 substantially covers the cross section of the entire light emitting device 700, and also represents the optical layer covering the light emitting element 2, the first insulating layer 122, the second insulating layer 124 and the third insulating layer 126, Causing the light-emitting element 2 to emit The light rays must pass through the optical layer 12 before passing through the optical element 6, and the portion reflected by the optical layer 12 is also reflected by the insulating layer and exits the light-emitting device 700 through the side wall 42. Therefore, for the light-emitting device 700, the formed light field has similar light intensities at various angles in the horizontal direction. In other embodiments, where the illumination device 700 has the same length and width on the set horizontal plane, the resulting light field will exhibit significant symmetry. The transparent support member 4 may further comprise a wavelength converting material such that part of the wavelength converting material is excited by the light emitted by the light emitting element 2 to generate light, which is partially reflected by the optical layer 12 to the insulating layer, and then exits from the side wall 42 by reflection of the insulating layer. Device 700. In the case where the transparent support member 4 comprises a wavelength converting material, and moreover because the optical layer 12 covers the entire light emitting device 700, the light emitting device 700 does not observe the presence of the wavelength converting material from above. Since the light intensity of the light-emitting device 700 at each angle is similar, the color over angle (COA) of the light-emitting device is also quite uniform.

參考第14a圖的實施例，在發光裝置700之上更可以覆蓋有光學層8，使得光學元件6的表面可以有不同的表面態樣，形成如前述第4a~4e圖以及第5a~5b圖中所顯示光學元件上視圖中的各種形式，也可以形成如上述第11圖的實施例中光學層覆蓋於光學元件6表面的第二區604的情況。本實施例中，光學層8的材料與光學層12相同，並藉由光學層8的設置提供不同於第12圖中的光學分布。光學層8的材料可以跟光學層12不同，而厚度也可以是相同或者不同。在第14b圖的實施例中，光學元件6與透明支撐元件4之間沒有光學層12，而光學層12則環繞發光裝置 700的側邊，使得發光元件2發出的光部分直接經過光學元件6便離開發光裝置700。在第7a~8圖中直接從發側邊離開發光裝置700的光線，以及經第一絕緣層122、第二絕緣層124與第三絕緣層126反射後由側壁離開發光裝置700的光線，在本實施例中受到環繞發光裝置700的光學層12影響，被反射後經過光學元件6的頂面68離開發光裝置700，進而減少了側向發光，並使得發光裝置700大部分(大於80%)的光線都經過頂面68離開，而成為一表面發光(surface emitter)的發光裝置。在其他的實施例中，更有超過90%的光線都是經由頂面68離開發光裝置700。並且在其他實施例中，發光裝置700可以包含有上述各個實施例中的斜邊64、66、各種不同實施樣態的頂面68、斜面480與482，並且更可以選擇性地將光學層12設置於位於光學元件6與透明支撐元件4之間，或是將光學層12設置於發光裝置的側壁。在第14b圖的實施例，光學元件6具有一第一區域及一第二區域，第一區域之寬度比第二區域大。 Referring to the embodiment of FIG. 14a, the optical layer 8 may be further covered on the light-emitting device 700 so that the surface of the optical element 6 may have different surface features, as shown in the aforementioned 4a-4e and 5a-5b. The various forms in the upper view of the optical element shown in the above can also form the case where the optical layer covers the second region 604 on the surface of the optical element 6 in the embodiment of the above-mentioned Fig. 11. In the present embodiment, the material of the optical layer 8 is the same as that of the optical layer 12, and the optical distribution in Fig. 12 is provided by the arrangement of the optical layer 8. The material of the optical layer 8 may be different from the optical layer 12, and the thickness may be the same or different. In the embodiment of Figure 14b, there is no optical layer 12 between the optical element 6 and the transparent support element 4, and the optical layer 12 surrounds the illumination device The side of the 700 causes the portion of the light emitted by the illuminating element 2 to exit the illuminating device 700 directly through the optical element 6. The light rays exiting the light-emitting device 700 directly from the light-emitting side in FIGS. 7a-8, and the light exiting the light-emitting device 700 by the sidewalls after being reflected by the first insulating layer 122, the second insulating layer 124, and the third insulating layer 126 are In this embodiment, it is affected by the optical layer 12 of the surrounding light-emitting device 700, and is reflected off the light-emitting device 700 through the top surface 68 of the optical element 6, thereby reducing lateral illumination and making the illumination device 700 mostly (greater than 80%). The light exits through the top surface 68 and becomes a surface emitter illumination device. In other embodiments, more than 90% of the light exits the illumination device 700 via the top surface 68. In other embodiments, the illumination device 700 can include the beveled edges 64, 66 of the various embodiments described above, the top surface 68, the slopes 480 and 482 of various embodiments, and optionally the optical layer 12. It is disposed between the optical element 6 and the transparent support element 4, or the optical layer 12 is disposed on the sidewall of the light-emitting device. In the embodiment of Figure 14b, the optical element 6 has a first region and a second region, the first region having a width greater than the second region.

第15圖為根據本發明一實施例所揭露之一發光裝置800，發光裝置800包含一第12圖中的發光裝置700、一光學元件106以及一承載板40。發光裝置700的第一電極142與第二電極144與位於承載板40上的電路(未繪示於圖中)或導電部(未繪示於圖中)電性連接，而光學元件106覆蓋發光裝置700，但承載板40靠近發光元件2的表面僅一部分被光學元件106所覆蓋。在其他實施例中，承載板40的表面被發光裝置700與光學元件106 覆蓋，也就是承載板40的表面不僅直接接觸發光裝置700，承載板40更有其他部分直接接觸光學元件106。本實施例中，至少一部份由發光元件2發出的光經由光學元件106離開發光裝置800，而光學元件106可以是單層或者多層結構並且相對於發光元件2發出的光線同時具有穿透以及反射的特性。光學元件106可以是一硬性材質，例如玻璃，也可以是一軟性材質，例如塑料等在常溫(25℃)或高溫(>50℃)下會發生形變的材料。在其他實施例中，透明支撐元件4包含波長轉換材料的情況時，至少部分波長轉換材料受激後發出的光線能穿透光學元件106而不被吸收或者反射。在本實施例中，發光裝置700不直接接觸光學元件106，因此在其他實施例中發光裝置700與光學元件106之間的空隙可以選擇性地填入流體以增加導熱效果，例如在環境溫度15℃以及氣壓1bar的環境下具有導熱係數40~180(mW/m-K)的氣體，像是氦氣、氖氣、氫氣、氯氟烴，氫氯氟烴，二氟甲烷或五氟乙烷等單一種氣體或多種氣體的混合氣體，也可以填入具有相當導熱係數的流體，同樣可以增加導熱的效果。本實施例中，發光裝置700與光學元件106之間沒有再額外填入流體，因此位於第一電極142與第二電極144之間的空隙143內也沒有另外填充進入發光裝置800的流體；而發光裝置700與光學元件106之間以及空隙143可以是真空的狀態，或者僅有形成發光裝置800時自然存在的氣體。在填入流體的時候，流體會至少充滿發光裝置700與光學元件106之間的部分空間，並且也至少填入部分的空隙143。當空隙143有 流體填充於其間的時候，等同於對發光裝置800進行底部填充(underfill)，不僅增加了散熱還改進了發光裝置800整體結構的穩定程度。而填入發光裝置700與光學元件106之間以及空隙143的流體，對於發光裝置700所發出的光為透明，也就是至少部分發光裝置700所發出的光可以直接穿過流體而不被吸收或反射。波長轉換材料除了可以存在於發光裝置700內的透明支撐元件4之內，也可以存在於發光裝置700與光學元件106之間的流體，或者是形成於光學元件106之上，例如位於光學元件106上靠近發光裝置700的內表面1061，或者是位於光學元件106上遠離發光裝置700的外表面1064，以吸收發光裝置700於一個方向或者多個方向所發出的光線。當波長轉換材料形成於光學元件106之上的時候，波長轉換材料上的熱更容易向外逸散，可避免過多的熱積存於發光裝置800內造成發光元件2的發光效率降低。本實施例中，光學元件106為一具有平整表面的元件，在其他實施例中光學元件106的內表面1061及/或外表面1064更可以有各種規律或者不規律的，具有相同形狀或者不同形狀的突起、粗糙部或者孔穴位於光學元件106的各種表面，而達到改變發光裝置800的光場分布的功效。 FIG. 15 is a light emitting device 800 according to an embodiment of the invention. The light emitting device 800 includes a light emitting device 700 in FIG. 12, an optical component 106, and a carrier board 40. The first electrode 142 and the second electrode 144 of the illuminating device 700 are electrically connected to a circuit (not shown) or a conductive portion (not shown) on the carrier board 40, and the optical component 106 covers the illuminating Device 700, but only a portion of the surface of carrier plate 40 adjacent to light-emitting element 2 is covered by optical element 106. In other embodiments, the surface of the carrier plate 40 is illuminated by the illumination device 700 and the optical component 106. The cover, that is to say the surface of the carrier plate 40, not only directly contacts the illumination device 700, but the other portion of the carrier plate 40 directly contacts the optical element 106. In this embodiment, at least a portion of the light emitted by the light-emitting element 2 exits the light-emitting device 800 via the optical element 106, and the optical element 106 may be a single layer or a multi-layer structure and simultaneously penetrates with respect to the light emitted by the light-emitting element 2 and The nature of the reflection. The optical element 106 may be a rigid material such as glass or a soft material such as plastic which is deformed at normal temperature (25 ° C) or high temperature (> 50 ° C). In other embodiments, where the transparent support member 4 comprises a wavelength converting material, at least a portion of the wavelength converting material is stimulated to emit light that penetrates the optical element 106 without being absorbed or reflected. In the present embodiment, the illumination device 700 does not directly contact the optical element 106, so in other embodiments the gap between the illumination device 700 and the optical element 106 can be selectively filled with fluid to increase thermal conductivity, such as at ambient temperature 15 Gas with a thermal conductivity of 40-180 (mW/mK) in a temperature of 1 bar and a pressure of 1 bar, such as helium, neon, hydrogen, chlorofluorocarbon, hydrochlorofluorocarbon, difluoromethane or pentafluoroethane A gas or a mixture of gases, which can also be filled with a fluid having a relatively high thermal conductivity, can also increase the heat transfer effect. In this embodiment, no additional fluid is filled between the light-emitting device 700 and the optical element 106, so that the fluid located in the gap 143 between the first electrode 142 and the second electrode 144 is not additionally filled with the fluid entering the light-emitting device 800; The light-emitting device 700 and the optical element 106 and the void 143 may be in a vacuum state, or only a gas that is naturally present when the light-emitting device 800 is formed. When the fluid is filled, the fluid fills at least a portion of the space between the illuminating device 700 and the optical element 106, and also at least a portion of the void 143. When the gap 143 has When the fluid is filled therebetween, it is equivalent to underfilling the light-emitting device 800, which not only increases the heat dissipation but also improves the stability of the overall structure of the light-emitting device 800. The fluid filled in between the illuminating device 700 and the optical element 106 and the gap 143 is transparent to the light emitted by the illuminating device 700, that is, at least part of the light emitted by the illuminating device 700 can pass directly through the fluid without being absorbed or reflection. The wavelength converting material may be present in the transparent support element 4 within the illumination device 700, or may be present between the illumination device 700 and the optical element 106, or formed over the optical element 106, such as at the optical element 106. The light is emitted from the inner surface 1061 of the light-emitting device 700 or away from the outer surface 1064 of the light-emitting device 700 to absorb the light emitted by the light-emitting device 700 in one direction or in multiple directions. When the wavelength converting material is formed on the optical element 106, the heat on the wavelength converting material is more likely to escape outward, and excessive heat accumulation in the light emitting device 800 can be avoided to cause a decrease in luminous efficiency of the light emitting element 2. In this embodiment, the optical component 106 is an element having a flat surface. In other embodiments, the inner surface 1061 and/or the outer surface 1064 of the optical component 106 may have various regularities or irregularities, and have the same shape or different shapes. The protrusions, roughness or holes are located at various surfaces of the optical element 106 to achieve the effect of changing the light field distribution of the illumination device 800.

除了如第15圖用一光學元件106覆蓋一發光裝置700的結構，本發明的另一實施例的側視圖，如第16a圖所示，更可以利用一光學元件107覆蓋位於承載板40上的複數個發光裝置700以形成發光裝置900，承載板40上的電路(未繪示於圖中)或 導電部(未繪示於圖中)可以電性連接複數個發光裝置700。在第16a圖的實施例中，發光裝置700具有一上寬下窄(梯形)的外型，其結構類似第14A、14B圖所示；在第16b圖的實施例中，發光裝置700具有上寬下窄(T型)的結構，其詳細結構如第14C圖所示，並以較窄的一側與承載板40相連接。其中上寬下窄的外型是為了讓發光元件2發出的光線所形成的光場更大，例如選擇寬度大於透明支撐元件4的光學元件6，讓光線可以照射到更大的範圍。而在第14C圖中的結構，上寬下窄的外型是在製作過程中利用切割的步驟形成。此外，在光學元件107與承載板40之間亦可以選擇性地填入流體(例如氣體)增加散熱的效果，或者在流體內加入波長轉換材料。如前所述，在形成發光裝置800時填入流體，部分流體會流入發光裝置800內的空隙143；而在本實施例中，在形成發光裝置900的同時填入流體，部分流體也會流入發光裝置700與承載板40之間，進而形成底部填充(underfill)的情況，除了達到散熱效果之外也增加了發光裝置700與承載板40之間的接合強度。在另一實施例中，一透明材料環繞並覆蓋發光裝置700，且填入承載板40與複數個發光裝置700間的空隙，而形成光學元件107；其中，透明材料的厚度略高於發光裝置700的高度，使發光裝置700從各個方向發出的光線會先經過透明材料才離開發光裝置900。參考第15圖的結構，本實施例中發光裝置700具有一上寬下窄的外型，位於透明支撐元件4內的波長轉換材料會被光學層12所遮蓋，從上視的角度並不會觀察到波長轉換材料的存在， 也就是不論發光裝置900發光與否，從上視的角度不會看到波長轉換材料的存在，而改善發光裝置900的視覺效果。發光裝置700上寬下窄的外型可以透過形成單一個發光裝置700的切割步驟產生，或者利用成模以及磊晶堆疊等方式形成。如上述的理由，當應用上為了美觀或者其他需求而不希望從上視角度看到波長轉換材料時，上述外型不需要再增加其他光學膜或者改變光學元件及/或填充入發光裝置的流體的材料，便能達到遮蔽波長轉換材料的效果，從而減少發光裝置700發出的光線被其他光學膜或者光學元件107自身所吸收的情況。以發光裝置900的外觀而言，光學元件107的外型可以是一橢圓形、圓柱形或一上寬下窄的形狀，更可以依照需要的光型改變光學元件107的外型。此外，當承載板40為一可透光基板的實施例時，發光裝置700所發出的光線可以透過上下兩側、前後兩側，以及左右兩側離開發光裝置900，使得發光裝置900成為一六面出光的發光裝置。 In addition to the structure in which a light-emitting device 700 is covered with an optical element 106 as shown in Fig. 15, a side view of another embodiment of the present invention, as shown in Fig. 16a, may be covered with an optical member 107 on the carrier plate 40. a plurality of light emitting devices 700 to form a light emitting device 900, a circuit on the carrier board 40 (not shown) or A conductive portion (not shown) may be electrically connected to the plurality of light emitting devices 700. In the embodiment of Fig. 16a, the illuminating device 700 has an upper width and a lower (trapezoidal) shape, and its structure is similar to that shown in Figs. 14A and 14B; in the embodiment of Fig. 16b, the illuminating device 700 has the upper portion. The structure is wide and narrow (T-shaped), and its detailed structure is as shown in Fig. 14C, and is connected to the carrier plate 40 on the narrower side. The upper and lower narrow shapes are such that the light field formed by the light emitted from the light-emitting element 2 is larger, for example, the optical element 6 having a width larger than that of the transparent supporting member 4 is selected, so that the light can be irradiated to a larger extent. In the structure of Fig. 14C, the upper width and the lower outer shape are formed by the step of cutting during the manufacturing process. In addition, a fluid (e.g., gas) may be selectively filled between the optical element 107 and the carrier plate 40 to increase the heat dissipation effect, or a wavelength converting material may be added to the fluid. As described above, when the light-emitting device 800 is formed, a fluid is filled, and a part of the fluid flows into the gap 143 in the light-emitting device 800. In the present embodiment, the fluid is filled while the light-emitting device 900 is formed, and some of the fluid also flows in. The underfill between the light-emitting device 700 and the carrier plate 40 further forms an underfill, which increases the bonding strength between the light-emitting device 700 and the carrier plate 40 in addition to the heat dissipation effect. In another embodiment, a transparent material surrounds and covers the light emitting device 700, and fills a gap between the carrier plate 40 and the plurality of light emitting devices 700 to form the optical element 107; wherein the transparent material has a thickness slightly higher than that of the light emitting device The height of 700 causes the light emitted by the illuminating device 700 from various directions to pass through the transparent material before leaving the illuminating device 900. Referring to the structure of FIG. 15, the light-emitting device 700 of the present embodiment has an upper and a narrower outer shape, and the wavelength conversion material located in the transparent supporting member 4 is covered by the optical layer 12, and does not look from the top view. Observing the presence of wavelength converting material, That is, regardless of whether the light-emitting device 900 is illuminated or not, the presence of the wavelength converting material is not seen from the top view, and the visual effect of the light-emitting device 900 is improved. The wide and narrow outer shape of the light-emitting device 700 can be generated by a cutting step of forming a single light-emitting device 700, or by molding, epitaxial stacking or the like. For the reasons described above, when it is not desirable to see the wavelength converting material from a top view for aesthetic reasons or other needs, the above shape does not require the addition of other optical films or changes to the optical elements and/or fluids filled into the illuminating device. The material can achieve the effect of shielding the wavelength converting material, thereby reducing the light emitted by the light-emitting device 700 from being absorbed by other optical films or optical elements 107 themselves. In terms of the appearance of the light-emitting device 900, the shape of the optical element 107 may be an elliptical shape, a cylindrical shape, or an upper and lower narrow shape, and the appearance of the optical element 107 may be changed according to a desired light pattern. In addition, when the carrier board 40 is an opaque substrate, the light emitted by the illuminating device 700 can pass through the upper and lower sides, the front and rear sides, and the left and right sides of the illuminating device 900, so that the illuminating device 900 becomes one or six. A light-emitting device that emits light.

第17a-17b圖所示，為本發明在第15~16圖中沿著兩個不同的方向量測光場分布的光強度分布圖。第17a圖中，在光強度分布圖的兩個峰部(100%)之間，有一個從約略-30°延伸到+30°的谷區，其中谷區的強度大約為60%。兩個峰部所在的位置大約在+/-60°，而0°則位在谷部之內。第17a圖中的光強度的分布大約是從-80°延伸到+80°並呈現大致左右對稱的情形，並且光強度分布的0°所在位置大約會對應到發光裝置800、900的幾何中心位置。第17b圖中，在光強度分布圖的兩個峰部(100%)之 間，有一個從約略-35°延伸到+35°的谷區，其中谷區的強度大約為55%而兩個峰部所在的位置大約在+/-60°，而0°則位在谷部之內。第17b圖中的光強度的分布大約是從-70°延伸到+70°並呈現大致左右對稱的情形，並且光強度分布的0°所在位置大約會對應到發光裝置800、900的幾何中心位置。從這兩個光強度分布圖可以得知，光強度大致以發光裝置的幾何中心為中心對稱分布，並且同樣都具有一個谷部位在兩個峰部之間，而兩個實施例中谷部與峰部的光強度比例大約在1：1.67~1：1.8之間。 Figures 17a-17b show the light intensity distribution of the light field distribution measured in two different directions in Figures 15-16 of the present invention. In Fig. 17a, between the two peaks (100%) of the light intensity profile, there is a valley extending from about -30 to +30, wherein the valley has an intensity of about 60%. The two peaks are located at approximately +/- 60°, while 0° is located within the valley. The distribution of the light intensity in Fig. 17a is approximately from -80° to +80° and exhibits a substantially bilateral symmetry, and the position of 0° of the light intensity distribution approximately corresponds to the geometric center position of the illuminating devices 800, 900. . In Figure 17b, in the two peaks (100%) of the light intensity distribution map Between, there is a valley extending from about -35° to +35°, where the valley is about 55% strong and the two peaks are at +/-60°, while 0° is in the valley. Within the department. The distribution of the light intensity in Fig. 17b is approximately from -70° to +70° and exhibits a substantially bilateral symmetry, and the position of 0° of the light intensity distribution approximately corresponds to the geometric center position of the illuminating devices 800, 900. . It can be known from the two light intensity distribution maps that the light intensity is roughly symmetrically distributed around the geometric center of the light-emitting device, and also has a valley portion between the two peaks, and in the two embodiments, the valley and the peak The light intensity ratio of the part is between 1:1.67 and 1:1.8.

如第18a~18b圖所示，本發明實施例揭露之一發光裝置在持續操作經過一段時間後，發光裝置所發出的光線所具有的CIE X座標(Cx)與CIE Y座標(Cy)會具有一偏移量(ΔCx,ΔCy≠0)，但是在經過一段操作時間之後又會回到原本的數值(ΔCx,ΔCy=0)。如第18a圖所示，一發光裝置所發出的光線所具有的CIE Y座標的值在經過約24小時的操作之後減少了約0.004(ΔCy=-0.004)，而同一光線所具有的CIE X座標的值如第18b圖所示在經過約24小時的操作之後減少了約0.001(ΔCx=-0.001)，但是兩個座標值在經過400小時的操作之後便緩慢的回到原本的數值。如第18c圖所示，另一發光裝置所發出的光線所具有的CIE Y座標的值在經過約24小時的操作之後減少了約0.005(ΔCy=-0.005)，但在經過100小時的操作之後，CIE Y座標的值不僅回到原本的值(ΔCy=0)，更出現大於原本數值的情況(ΔCy>0)；而同一光線所具有的CIE X座標的值如第18d圖所示在經過約24小時的操作之後 減少了約0.003(ΔCx=-0.003)，但在經過100小時的操作之後，CIE X座標的值不僅回到原本的值(ΔCx=0)，也跟CIE Y座標相似，出現了大於原本數值的情況(ΔCx>0)。除了前述的CIE XY座標之外，發光裝置的光輸出功率也會在持續運轉一定時間之後出現輸出功率降低的情況，但是再持續操作一段時間後，輸出的功率又會回到原本的數值。更有其他實施例在經過一段時間的持續操作之後，輸出的功率反而會更大於原本初始的輸出功率。 As shown in the figures 18a-18b, an embodiment of the present invention discloses that a light emitting device emits light having a CIE X coordinate (Cx) and a CIE Y coordinate (Cy) after a period of continuous operation. An offset (ΔCx, ΔCy ≠ 0), but returns to the original value (ΔCx, ΔCy = 0) after a period of operation. As shown in Fig. 18a, the light emitted by an illumination device has a CIE Y coordinate value that is reduced by about 0.004 (ΔCy = -0.004) after about 24 hours of operation, while the same light has a CIE X coordinate. The value was reduced by about 0.001 (ΔCx = -0.001) after about 24 hours of operation as shown in Figure 18b, but the two coordinate values slowly returned to their original values after 400 hours of operation. As shown in Fig. 18c, the light emitted by the other illuminating device has a CIE Y coordinate value which is reduced by about 0.005 (ΔCy = -0.005) after about 24 hours of operation, but after 100 hours of operation. The value of the CIE Y coordinate not only returns to the original value (ΔCy = 0), but also occurs more than the original value (ΔCy > 0); and the value of the CIE X coordinate of the same ray is shown in Figure 18d. After about 24 hours of operation Reduced by about 0.003 (ΔCx = -0.003), but after 100 hours of operation, the value of the CIE X coordinate not only returns to the original value (ΔCx = 0), but also similar to the CIE Y coordinate, appears larger than the original value Case (ΔCx>0). In addition to the aforementioned CIE XY coordinates, the light output power of the illuminating device will also decrease in output power after a certain period of continuous operation, but after a period of continuous operation, the output power will return to the original value. Still other embodiments, after a period of continuous operation, the output power will instead be greater than the original initial output power.

參考第19a圖的實施例，發光裝置1000包含一透明支撐元件4形成於發光元件2之上。透明支撐元件4覆蓋著發光元件2，而光學元件6位於透明支撐元件4之上，以及一包含波長轉換材料的波長轉換層30位於發光元件2之上。本實施例中，發光元件2與光學元件6之間存在有透明支撐元件4與波長轉換層30，其中波長轉換層30大致沿著發光元件2的輪廓覆蓋著發光元件2。在另一實施例中，可先形成一透明材料(圖未示)沿著發光元件2的輪廓覆蓋著發光元件2，再形成波長轉換層30於透明材料上。波長轉換層30係沿著透明材料的輪廓覆蓋透明材料。透明材料可為透明度類似或相同於透明支撐元件4的材料。波長轉換材料也可分散於透明支撐元件4中。 Referring to the embodiment of Fig. 19a, the illumination device 1000 comprises a transparent support member 4 formed on the illumination element 2. The transparent support member 4 covers the light-emitting element 2, and the optical element 6 is positioned above the transparent support member 4, and a wavelength conversion layer 30 containing a wavelength converting material is placed over the light-emitting element 2. In the present embodiment, between the light-emitting element 2 and the optical element 6, there is a transparent support element 4 and a wavelength conversion layer 30, wherein the wavelength conversion layer 30 covers the light-emitting element 2 substantially along the outline of the light-emitting element 2. In another embodiment, a transparent material (not shown) may be formed to cover the light-emitting element 2 along the outline of the light-emitting element 2, and then the wavelength conversion layer 30 is formed on the transparent material. The wavelength conversion layer 30 is covered with a transparent material along the contour of the transparent material. The transparent material may be a material having a transparency similar to or the same as that of the transparent support member 4. The wavelength converting material can also be dispersed in the transparent support member 4.

如第19a圖所示，第一絕緣層122、第二絕緣層124與第三絕緣層126位於發光元件2相對於光學元件6的一側。光學元件6包含斜邊(如第1b圖所示)。發光元件2具有第一電極142與第二電極144形成在絕緣層122、124、126之間，電極142、 144係分別電性連接至發光元件2之第一半導體層及第二半導體層(圖未示)。發光裝置1000更包含一中間層146及導電黏著材料1420、1440。中間層146有助於強化導電黏著材料1420、1440與絕緣層122、124間之結合。中間層146具有一側，與電極142、144及絕緣層122、124、126相連；以及具有另一側，與導電黏著材料1420、1440相連。發光元件2可透過電極142、144、中間層146與導電黏著材料1420、1440與外部電路電性連接。電極142、144之材料可以包含金、銅、錫、銀、鈦、鉑、鎳或其合金。中間層146之材料可選用適於電鍍時作為晶種層之金屬，例如鈦、銅、鎳、銀、錫、金或其組合。中間層146亦可為一銀膏，其包含複數個顆粒尺寸為5nm至500nm間的銀或銀合金粒子。 As shown in FIG. 19a, the first insulating layer 122, the second insulating layer 124, and the third insulating layer 126 are located on the side of the light-emitting element 2 with respect to the optical element 6. The optical element 6 comprises a beveled edge (as shown in Figure 1b). The light emitting element 2 has a first electrode 142 and a second electrode 144 formed between the insulating layers 122, 124, 126, and the electrode 142, 144 is electrically connected to the first semiconductor layer and the second semiconductor layer (not shown) of the light-emitting element 2, respectively. The light emitting device 1000 further includes an intermediate layer 146 and conductive adhesive materials 1420 and 1440. The intermediate layer 146 helps to strengthen the bond between the conductive adhesive materials 1420, 1440 and the insulating layers 122, 124. The intermediate layer 146 has one side that is connected to the electrodes 142, 144 and the insulating layers 122, 124, 126; and has the other side that is connected to the conductive adhesive material 1420, 1440. The light-emitting element 2 is electrically connected to the external circuit through the electrodes 142, 144, the intermediate layer 146 and the conductive adhesive materials 1420, 1440. The material of the electrodes 142, 144 may comprise gold, copper, tin, silver, titanium, platinum, nickel or alloys thereof. The material of the intermediate layer 146 may be selected from a metal suitable as a seed layer for electroplating, such as titanium, copper, nickel, silver, tin, gold or a combination thereof. The intermediate layer 146 can also be a silver paste comprising a plurality of silver or silver alloy particles having a particle size between 5 nm and 500 nm.

此外，即使導電黏著材料1420、1440與電極142、144間及導電黏著材料1420、1440與絕緣層122、124、126間沒有中間層146，導電黏著材料1420、1440也可直接連接電極142、144及絕緣層122、124。導電黏著材料1420、1440除了提供發光元件2與外部的電性連接之外，亦具有足夠的黏著性，可使發光元件2不需使用焊料即可固定在承載板40上(參照第15圖)。因此，可省略銲料以及回銲(reflow)的步驟，降低製程成本。需注意的是，若有需要，焊料仍可施加於導電黏著材料1420、1440與承載板40之間。導電黏著材料1420、1440可以在溫度低於300℃以及壓力0.2~20Mpa的條件下與電極142、144貼合。或者，可以在溫度230℃及壓力5Mpa的條件下與電極142、144進行貼合。也就是，該 導電黏著材料具有一小於300℃之狀態轉換溫度。在一實施例中，導電黏著材料1420、1440可以在溫度低於300℃或者在800℃~250℃的溫度下不需施以額外的壓力即可以與電極142、144貼合。同樣地，導電黏著材料1420、1440與承載板40的連接條件可以參照上述導電黏著材料1420、1440與電極142、144的任一貼合條件(加壓或/及加熱)。導電黏著材料於後續會再詳細描述。 In addition, even if there is no intermediate layer 146 between the conductive adhesive materials 1420, 1440 and the electrodes 142, 144 and between the conductive adhesive materials 1420, 1440 and the insulating layers 122, 124, 126, the conductive adhesive materials 1420, 1440 can be directly connected to the electrodes 142, 144. And insulating layers 122, 124. The conductive adhesive materials 1420 and 1440 have sufficient adhesiveness in addition to the electrical connection between the light-emitting element 2 and the outside, so that the light-emitting element 2 can be fixed to the carrier plate 40 without using solder (refer to Fig. 15). . Therefore, the steps of solder and reflow can be omitted, and the process cost can be reduced. It should be noted that solder may still be applied between the conductive adhesive material 1420, 1440 and the carrier plate 40 if desired. The conductive adhesive materials 1420 and 1440 can be bonded to the electrodes 142 and 144 at a temperature lower than 300 ° C and a pressure of 0.2 to 20 MPa. Alternatively, the electrodes 142 and 144 may be bonded together at a temperature of 230 ° C and a pressure of 5 MPa. That is, the The electrically conductive adhesive material has a state transition temperature of less than 300 °C. In one embodiment, the electrically conductive adhesive materials 1420, 1440 can be bonded to the electrodes 142, 144 at temperatures below 300 ° C or at temperatures between 800 ° C and 250 ° C without the need for additional pressure. Similarly, the bonding conditions of the conductive adhesive materials 1420 and 1440 and the carrier 40 can be referred to any of the bonding conditions (pressurization or/and heating) of the conductive adhesive materials 1420 and 1440 and the electrodes 142 and 144. Conductive adhesive materials will be described in detail later.

第19c、19e圖之發光裝置1000具有與第19a圖類似的結構，其中相同的符號或是記號表示具有類似或是相同的元件、裝置或步驟。如第19c圖所示，光學元件6具有一矩形的剖面。如第19e圖所示，透明支撐元件4的寬度比光學元件6的寬度略大，因而改變從透明支撐元件4的側邊離開發光裝置1000的光線的行進方向以及出光量，因而形成不同於第19a與19c圖中發光裝置1000的光場。第19b、19d、19f圖之發光裝置1000分別具有與第19a、19c、19e圖類似的結構，但發光裝置1000內不包含波長轉換材料。於本發明之各實施例中，波長轉換材料亦可選擇性地散佈(disperse)於透明支撐元件4內。 The illuminating device 1000 of Figs. 19c, 19e has a structure similar to that of Fig. 19a, in which the same symbols or symbols indicate similar or identical elements, devices or steps. As shown in Fig. 19c, the optical element 6 has a rectangular cross section. As shown in Fig. 19e, the width of the transparent supporting member 4 is slightly larger than the width of the optical member 6, thereby changing the traveling direction and the amount of light emitted from the side of the transparent supporting member 4 away from the light-emitting device 1000, thereby forming a difference from the first The light fields of the illuminating device 1000 in the figures 19a and 19c. The light-emitting devices 1000 of the 19th, 19th, and 19thth views have structures similar to those of the 19th, 19c, and 19e, but the light-emitting device 1000 does not include the wavelength conversion material. In various embodiments of the invention, the wavelength converting material may also be selectively dispersed within the transparent support member 4.

參照第20a~20f圖，第20a~20f圖之發光裝置1000具有與第19a~19f圖類似的結構，其中相同的符號或是記號表示類似或是相同的元件或裝置。第20a~20f圖之發光裝置1000不設置絕緣層122、124以及126及中間層146。此外，導電黏著材料1420、1440僅形成於電極142、144之上並具有與電極142、144相同或不同之面積(例如：大於或小於)。當發光裝置1000藉由導電黏著 材料1440、1420固定於承載板(圖未式)時，可設計導電黏著材料1440、1420之厚度以增加與承載板間的連結強度。增加導電黏著材料1440、1420之厚度亦可幫助發光裝置100所產生的熱傳至外界環境。在一實施例中，導電黏著材料1440、1420具有一大於10um的厚度，或者具有一不小於20um且不大於100um的厚度。導電黏著材料1440、1420的厚度至少為電極142、144厚度的5倍以上或10倍以上以增加結構強度。 Referring to Figures 20a-20f, the illuminating device 1000 of Figures 20a-20f has a structure similar to that of Figures 19a-19f, wherein the same symbols or symbols indicate similar or identical elements or devices. The light-emitting device 1000 of FIGS. 20a to 20f is not provided with insulating layers 122, 124, and 126 and an intermediate layer 146. In addition, conductive adhesive materials 1420, 1440 are formed only over electrodes 142, 144 and have the same or different areas (eg, greater or less than) of electrodes 142, 144. When the light emitting device 1000 is electrically conductively adhered When the materials 1440, 1420 are fixed to the carrier plate (not shown), the thickness of the conductive adhesive materials 1440, 1420 can be designed to increase the bonding strength with the carrier plates. Increasing the thickness of the conductive adhesive materials 1440, 1420 can also help the heat generated by the light-emitting device 100 to pass to the external environment. In one embodiment, the electrically conductive adhesive material 1440, 1420 has a thickness greater than 10 um or a thickness of no less than 20 um and no greater than 100 um. The thickness of the electrically conductive adhesive material 1440, 1420 is at least 5 times or more than the thickness of the electrodes 142, 144 to increase structural strength.

如第21a與21b圖所示，可於透明支撐元件4與光學元件6之間加入光學層12，。透過調整光學層12的成分與結構，可以達到需要的反射率及/或光場。光學層12之詳細描述可參考第12圖之說明，為簡潔故，將不在此撰述。 As shown in Figures 21a and 21b, an optical layer 12 can be added between the transparent support member 4 and the optical member 6. By adjusting the composition and structure of the optical layer 12, the desired reflectivity and/or light field can be achieved. A detailed description of the optical layer 12 can be found in the description of Fig. 12, and will not be described herein for the sake of brevity.

參照第22a及22b圖，發光裝置1000具有與第19a及19b圖類似的結構，其中相同的符號或是記號表示類似或是相同的元件或裝置。第22a及22b圖之發光裝置1000包含覆蓋於發光元件2上之透明支撐元件4，但在透明支撐元件4上沒有覆蓋一光學元件6。第22c及22d圖之發光裝置1000具有與第20a及20b圖類似的結構。第22c及22d圖之發光裝置1000包含覆蓋於發光元件2上之透明支撐元件4，但在透明支撐元件4上沒有再覆蓋一光學元件6。第22e圖之發光裝置1000包含一波長轉換層30位於發光元件2及透明支撐元件4之間。 Referring to Figures 22a and 22b, illumination device 1000 has a structure similar to that of Figures 19a and 19b, in which the same reference numerals or symbols indicate similar or identical elements or devices. The light-emitting device 1000 of Figures 22a and 22b comprises a transparent support member 4 overlying the light-emitting element 2, but does not cover an optical element 6 on the transparent support member 4. The light-emitting device 1000 of Figures 22c and 22d has a structure similar to that of Figures 20a and 20b. The illuminating device 1000 of Figures 22c and 22d comprises a transparent supporting member 4 overlying the illuminating element 2, but no further covering an optical element 6 on the transparent supporting member 4. The light-emitting device 1000 of Fig. 22e includes a wavelength conversion layer 30 between the light-emitting element 2 and the transparent support member 4.

在本發明中，第1~2b圖、第6~8圖、第9e~9h、10a~10b圖、第12圖、第14a~15圖、第19a~19f圖、第20a~20f圖、第21a~21b 圖、第22a~22e圖的實施例中，雖然僅包含單一發光元件2，但也可以設置多個發光元件2於單一個發光裝置內，且多個發光元件2可以發出一種或多種的光線。並且在個別實施例中，各元件的調整或者變形，皆可以依據不同的需求應用在別的實施例中。 In the present invention, the first to second b, the sixth to eighth, the nineth to the eleventh, the tenth to the tenth to the tenth, the eleventh to the eleventh, the eleventh to the eleventh to the tenth 21a~21b In the embodiment of Figs. 22a to 22e, although only a single light-emitting element 2 is included, a plurality of light-emitting elements 2 may be provided in a single light-emitting device, and the plurality of light-emitting elements 2 may emit one or more kinds of light. Moreover, in individual embodiments, the adjustment or deformation of each component can be applied to other embodiments according to different requirements.

第23a~26e圖顯示導電黏著材料形成於發光元件上之不同實施例之製造流程示意圖。在23a~26e圖中，雖以發光元件為例，但相同的製造流程亦可適用於其他的電子元件，如電容、電阻、電感、二極體或積體電路等非發光元件。須注意的是，導電黏著材料因其性質或廠牌不同，形成於發光元件上之方法亦可能不同。例如：於第23a~24c圖中的實施例，導電黏著材料可以是膠體狀，適於利用印刷方式形成於發光元件上；於第25a~27f圖中的實施例，導電黏著材料係先形成膜再與發光元件接合。以下將針對不同實施例做詳細描述。 Figures 23a to 26e show schematic views of the manufacturing process of different embodiments in which a conductive adhesive material is formed on a light-emitting element. In the figures 23a to 26e, although the light-emitting element is taken as an example, the same manufacturing process can be applied to other electronic components such as a non-light-emitting element such as a capacitor, a resistor, an inductor, a diode, or an integrated circuit. It should be noted that the method of forming the conductive adhesive material on the light-emitting element may be different depending on its nature or the brand. For example, in the embodiment of Figures 23a-24c, the conductive adhesive material may be in the form of a gel, which is suitable for being formed on the light-emitting element by printing; in the embodiment of Figures 25a to 27f, the conductive adhesive material is formed into a film first. It is then bonded to the light-emitting element. The detailed description will be made below for different embodiments.

如第23a圖所示，複數個發光元件2設置在第一暫時載板71上且暴露出電極142、144。接著，提供導電黏著材料1420、1440。在此實施例中，導電黏著材料1420、1440為一導電黏著膠。導電黏著膠為一金屬膠體，其包含具有包覆體(capping agent)的金屬顆粒分散於一膠體中。金屬顆粒包含金、銀、銅、鎳、鉑、鈀、鐵、鎳其合金或其混和物。金屬顆粒之顆粒尺寸為5nm至500nm。包覆體係包覆於金屬顆粒外以防止在製作具有奈米尺寸之金屬顆粒時金屬顆粒彼此聚集(coalesce)，且進一步控制金屬顆粒的尺寸。包覆體可為一有機胺；例如：十六烷基胺 (hexadecylamine)；硫醇(thiol)，例如：dodecanethiol；或吡啶(pyridine)，例如；triazolopyridine或tepyridiner。膠體包含熱塑性黏著劑或熱固性黏著劑。 As shown in Fig. 23a, a plurality of light-emitting elements 2 are disposed on the first temporary carrier 71 and expose the electrodes 142, 144. Next, conductive adhesive materials 1420, 1440 are provided. In this embodiment, the conductive adhesive materials 1420, 1440 are a conductive adhesive. The conductive adhesive is a metal colloid comprising metal particles having a capping agent dispersed in a colloid. The metal particles comprise gold, silver, copper, nickel, platinum, palladium, iron, nickel, alloys thereof or mixtures thereof. The metal particles have a particle size of 5 nm to 500 nm. The coating system is coated on the outside of the metal particles to prevent the metal particles from coalescing each other when the metal particles having a nanometer size are produced, and further controlling the size of the metal particles. The coating may be an organic amine; for example: hexadecylamine (hexadecylamine); thiol, for example: dodecanethiol; or pyridine, for example; triazolopyridine or tepyridiner. The colloid contains a thermoplastic adhesive or a thermosetting adhesive.

如第23b圖所示，利用網版印刷方式將導電黏著膠1420、1440分別形成於電極142、144上。接著，於一介於70~250℃的第一溫度下加熱固化導電黏著膠1420、1440。需注意的是，於加熱前，導電黏著膠1420、1440呈現一膠體狀；加熱後，部分包覆體會被移除且使導電黏著膠1420、1440硬化且呈現一半固化狀。此外，當包覆體被移除時，金屬顆粒會聚集且可形成一具有一第一孔隙率之多孔隙之膜層。在本實施例中，因使用網版印刷，因此導電黏著膠1420、1440具有一凹凸上表面以及一弧形側表面。若使用鋼板印刷，則導電黏著膠1420、1440通常具有一平整上表面。 As shown in Fig. 23b, conductive adhesives 1420, 1440 are formed on the electrodes 142, 144, respectively, by screen printing. Next, the conductive adhesive 1420, 1440 is cured by heating at a first temperature of 70 to 250 °C. It should be noted that before heating, the conductive adhesives 1420, 1440 appear in a colloidal state; after heating, some of the coatings are removed and the conductive adhesives 1420, 1440 are hardened and appear to be half cured. Further, when the coating body is removed, the metal particles are aggregated and a film layer having a porosity of a first porosity can be formed. In the present embodiment, since the screen printing is used, the conductive adhesive 1420, 1440 has a concave-convex upper surface and an arc-shaped side surface. If a steel plate is used, the conductive adhesive 1420, 1440 typically has a flat upper surface.

如第23c圖所示，將複數個具有導電黏著膠1420、1440之發光元件2翻轉並排列在第二暫時載板72上。於此步驟中，導電黏著膠1420、1440僅與第二暫時載板72暫時接觸。之後，移除第一暫時載板71。 As shown in Fig. 23c, a plurality of light-emitting elements 2 having conductive adhesives 1420, 1440 are inverted and arranged on the second temporary carrier 72. In this step, the conductive adhesive 1420, 1440 is only temporarily in contact with the second temporary carrier 72. Thereafter, the first temporary carrier 71 is removed.

如第23d圖所示，將複數個發光元件2從第二暫時載板72轉移至承載板40上。接著，於一介於150~200℃的第二溫度下加熱導電黏著膠1420、1440。此時，剩餘之包覆體會部分或全部被移除，因此導電黏著膠1420、1440被完全或幾乎完全固化且使得複數個發光元件2固定於承載板40上。同樣地，當剩餘之 包覆體被移除時，多孔隙之膜層可進一步形成具有一第二孔隙率之膜層或者形成一無孔隙之膜層。第二孔隙率通常小於第一孔隙率。需注意的是，相較於單一取放(pick and place)製程，透過以上方法，複數個發光元件2可同時一次性地(volumn transfer)固定於承載板40上。此外，本實施例之方法，可以不使用焊鍚，藉由導電黏著膠1420、1440即可使複數個發光元件2固定於承載板40上。在此實施例中，於第二溫度的加熱過程中(第二溫度大於第一溫度)，可以不施加其他外力於發光元件2上即可將其固定於承載板40上。由於導電黏著膠1420、1440具有一小於300℃之狀態轉換溫度，根據不同的需求，導電黏著膠1420、1440可從膠體狀轉換成半固化狀、半固化狀轉換成固化狀或是膠體狀轉換成固化狀。 As shown in Fig. 23d, a plurality of light-emitting elements 2 are transferred from the second temporary carrier 72 to the carrier plate 40. Next, the conductive adhesive 1420, 1440 is heated at a second temperature between 150 and 200 °C. At this time, the remaining coating body is partially or completely removed, and thus the conductive adhesive 1420, 1440 is completely or almost completely cured and the plurality of light emitting elements 2 are fixed to the carrier sheet 40. Similarly, when the rest When the coating is removed, the porous film layer may further form a film layer having a second porosity or form a film layer having no porosity. The second porosity is typically less than the first porosity. It should be noted that, in comparison with a single pick and place process, a plurality of light-emitting elements 2 can be fixed to the carrier 40 at the same time by a volume transfer. In addition, in the method of the embodiment, the plurality of light-emitting elements 2 can be fixed to the carrier 40 by the conductive adhesive 1420, 1440 without using a solder bump. In this embodiment, during the heating of the second temperature (the second temperature is greater than the first temperature), it may be fixed to the carrier plate 40 without applying other external force to the light-emitting element 2. Since the conductive adhesive 1420, 1440 has a state transition temperature of less than 300 ° C, according to different requirements, the conductive adhesive 1420, 1440 can be converted from a colloid to a semi-cured, semi-cured to a solidified or colloidal conversion. It is solidified.

第24a~24c圖為根據本發明另一實施例之製造流程示意圖。與其他實施例相同的符號或是記號表示類似或是相同的元件或裝置，將不再贅述。在此實施例中，導電黏著材料亦為一導電黏著膠。導電黏著膠之描述可參考前述實施例中的描述。 24a-24c are schematic views of a manufacturing process according to another embodiment of the present invention. The same symbols or symbols as those of the other embodiments denote similar or identical elements or devices, and will not be described again. In this embodiment, the conductive adhesive material is also a conductive adhesive. The description of the conductive adhesive can be referred to the description in the foregoing embodiment.

如第24a圖所示，複數個發光疊層201磊晶成長於一成長基板801(例如：藍寶石、SiC、GaN、GaP或GaAs等)上。一溝槽802形成於兩相鄰發光疊層201之間。 As shown in Fig. 24a, a plurality of light emitting laminates 201 are epitaxially grown on a growth substrate 801 (e.g., sapphire, SiC, GaN, GaP, GaAs, etc.). A trench 802 is formed between two adjacent light emitting stacks 201.

如第24b圖所示，利用網版印刷方式分別將導電黏著膠1420、1440形成於電極142、144上。接著，於一介於70~250℃的第一溫度下加熱固化導電黏著膠1420、1440。之後，沿著溝 槽802分開複數個發光疊層201以形成複數個彼此各自獨立且仍保有部分成長基板811之發光元件2。同樣地，如第23b圖所示，導電黏著膠1420、1440亦具有一凹凸上表面以及一弧形側表面 As shown in Fig. 24b, conductive adhesives 1420, 1440 are formed on the electrodes 142, 144, respectively, by screen printing. Next, the conductive adhesive 1420, 1440 is cured by heating at a first temperature of 70 to 250 °C. After that, along the ditch The groove 802 separates the plurality of light emitting laminates 201 to form a plurality of light emitting elements 2 that are independent of each other and still retain a portion of the growth substrate 811. Similarly, as shown in FIG. 23b, the conductive adhesive 1420, 1440 also has a concave and convex upper surface and an arcuate side surface.

如第24c圖所示，將複數個發光元件2放置於承載板40上。於一介於150~200℃的第二溫度下加熱導電黏著膠1420、1440，使導電黏著膠1420、1440被固化且使得複數個發光元件2因此固定於承載板40上。 As shown in Fig. 24c, a plurality of light-emitting elements 2 are placed on the carrier plate 40. The conductive adhesive 1420, 1440 is heated at a second temperature between 150 and 200 ° C to cure the conductive adhesive 1420, 1440 and thereby the plurality of light-emitting elements 2 are thus fixed to the carrier 40.

第25a~25c圖為根據本發明另一實施例之製造流程示意圖。如第25a圖所示，提供複數個發光元件2於一第一暫時基板71上以暴露出電極142、144。接著，提供導電黏著材料1480。在此實施例中，導電黏著材料為一膜層(Film)。導電黏著材料1480包含一基材1481及導電黏著膜1482形成於基材上。可利用塗佈(spin coating)或噴塗(spray)等方式將導電黏結膠形成於基材1481上以形成一導電黏著膜1482。導電黏著膜1482包含膠體及具有包覆體(capping agent)的金屬顆粒。金屬顆粒包含金、銀、銅、鎳、鉑、鈀、鐵、其合金或其混和物。金屬顆粒顆粒尺寸可為5nm至500nm。包覆體係包覆於金屬顆粒外以防止在製作具有奈米尺寸之金屬顆粒時金屬顆粒彼此聚集(coalesce)，且進一步控制金屬顆粒的尺寸。包覆體可為一有機胺；例如：十六烷基胺(hexadecylamine)；硫醇(thiol)，例如：dodecanethiol；或吡啶(pyridine)，例如；triazolopyridine或tepyridiner。膠體包含熱塑性黏著劑或熱固性黏著劑。 25a-25c are schematic views of a manufacturing process according to another embodiment of the present invention. As shown in Fig. 25a, a plurality of light-emitting elements 2 are provided on a first temporary substrate 71 to expose the electrodes 142, 144. Next, a conductive adhesive material 1480 is provided. In this embodiment, the conductive adhesive material is a film. The conductive adhesive material 1480 includes a substrate 1481 and a conductive adhesive film 1482 formed on the substrate. The conductive adhesive can be formed on the substrate 1481 by spin coating or spraying to form a conductive adhesive film 1482. The conductive adhesive film 1482 contains a colloid and metal particles having a capping agent. The metal particles comprise gold, silver, copper, nickel, platinum, palladium, iron, alloys thereof or mixtures thereof. The metal particle size may range from 5 nm to 500 nm. The coating system is coated on the outside of the metal particles to prevent the metal particles from coalescing each other when the metal particles having a nanometer size are produced, and further controlling the size of the metal particles. The coating may be an organic amine; for example: hexadecylamine; thiol, for example: dodecanethiol; or pyridine, for example; triazolopyridine or tepyridiner. The colloid contains a thermoplastic adhesive or a thermosetting adhesive.

如第25b圖所示，將複數個發光元件2之電極142、144固定在導電黏著膜1482上移除第一暫時載板71。之後，進行加熱加壓(70~250℃以及0.2~20Mpa)步驟使得導電黏著膜1482可與電極142、144相結合。如第25c圖所示，當分離導電黏著材料1480與複數個發光元件2時，與發光元件2相接觸之導電黏著膜1482會同時轉移至電極142、144上，因此發光元件2即具有導電黏著膜1420、1440。 As shown in Fig. 25b, the electrodes 142, 144 of the plurality of light-emitting elements 2 are fixed to the conductive adhesive film 1482 to remove the first temporary carrier 71. Thereafter, a step of heating and pressurizing (70 to 250 ° C and 0.2 to 20 MPa) is performed so that the conductive adhesive film 1482 can be combined with the electrodes 142, 144. As shown in FIG. 25c, when the conductive adhesive material 1480 and the plurality of light-emitting elements 2 are separated, the conductive adhesive film 1482 that is in contact with the light-emitting element 2 is simultaneously transferred to the electrodes 142, 144, so that the light-emitting element 2 has conductive adhesion. Membrane 1420, 1440.

如第25d圖所示，將具有導電黏著膜1420、1440之發光元件2放置於承載板40並進行一加熱或加熱加壓(150~200℃，0.2~20Mpa)的製程以使發光元件2固定於承載板40上。由於承載板40上具有電路(圖未示)，因此發光元件2係藉由導電黏著膜1420、1440直接與承載板40上之電路形成電連接。需注意的是，於加熱後，部分或全部之包覆體會被移除，使得導電黏著膜具有不同的性質(例如：孔隙率改變、顏色改變或黏度改變)。 As shown in Fig. 25d, the light-emitting element 2 having the conductive adhesive films 1420 and 1440 is placed on the carrier plate 40 and subjected to a heating or heating (150 to 200 ° C, 0.2 to 20 MPa) process to fix the light-emitting element 2 On the carrier board 40. Since the carrier board 40 has circuitry (not shown), the light-emitting elements 2 are electrically connected directly to the circuitry on the carrier board 40 by conductive adhesive films 1420, 1440. It should be noted that after heating, some or all of the coating will be removed, so that the conductive adhesive film has different properties (for example, porosity change, color change or viscosity change).

第26a~26e圖為根據本發明另一實施例導電黏著材料與發光元件接合之製造方法流程剖面圖。相同的符號或是記號表示類似或是相同的元件或裝置。同樣的，在此實施例中，導電黏著材料1480包含一基材1481及導電黏著膜1482形成於基材1481上。導電黏著材料1480之描述可參考前述實施例中的描述。 26a to 26e are cross-sectional views showing the flow of a method of manufacturing a conductive adhesive material and a light-emitting element according to another embodiment of the present invention. The same symbols or symbols indicate similar or identical components or devices. Similarly, in this embodiment, the conductive adhesive material 1480 includes a substrate 1481 and a conductive adhesive film 1482 formed on the substrate 1481. The description of the conductive adhesive material 1480 can be referred to the description in the foregoing embodiment.

如第26a圖所示，複數個發光疊層201磊晶成長於一成長基板801(例如：藍寶石、SiC、GaN、GaP或GaAs等)上。一溝槽802形成於兩發光疊層201之間。 As shown in Fig. 26a, a plurality of light emitting laminates 201 are epitaxially grown on a growth substrate 801 (e.g., sapphire, SiC, GaN, GaP, GaAs, etc.). A trench 802 is formed between the two light emitting stacks 201.

如第26b圖所示，複數個發光元件2之電極142、144固定在導電黏著膜1482上，並加熱加壓(70~250℃以及0.2~20Mpa)使得導電黏著膜1482可與電極142、144相結合。 As shown in FIG. 26b, the electrodes 142 and 144 of the plurality of light-emitting elements 2 are fixed on the conductive adhesive film 1482, and are heated and pressurized (70 to 250 ° C and 0.2 to 20 MPa) so that the conductive adhesive film 1482 can be connected to the electrodes 142 and 144. Combine.

如第26c圖所示，沿著溝槽802分開複數個發光疊層201以形成彼此各自獨立且具有成長基板811之複數個發光元件2。如第26d圖所示，當分離導電黏著材料1480與複數個發光元件2時，與發光元件2相接觸之導電黏著膜1482會同時轉移至電極142、144上，因此發光元件2即具有導電黏著膜1420、1440。 As shown in Fig. 26c, a plurality of light emitting laminates 201 are separated along the trenches 802 to form a plurality of light emitting elements 2 which are independent of each other and have a growth substrate 811. As shown in Fig. 26d, when the conductive adhesive material 1480 and the plurality of light-emitting elements 2 are separated, the conductive adhesive film 1482 that is in contact with the light-emitting element 2 is simultaneously transferred to the electrodes 142, 144, so that the light-emitting element 2 has conductive adhesion. Membrane 1420, 1440.

如第26e圖所示，將具有導電黏著膜1420、1440之發光元件2放置於承載板40並進行一加熱或加熱加壓(150~200℃，0.2~20Mpa)的製程以使發光元件2固定於承載板40上。由於承載板40上具有電路(圖未示)，因此發光元件2係藉由導電黏著膜1420、1440直接與承載板40上之電路形成電連接。 As shown in Fig. 26e, the light-emitting element 2 having the conductive adhesive films 1420 and 1440 is placed on the carrier plate 40 and subjected to a heating or heating (150 to 200 ° C, 0.2 to 20 MPa) process to fix the light-emitting element 2 On the carrier board 40. Since the carrier board 40 has circuitry (not shown), the light-emitting elements 2 are electrically connected directly to the circuitry on the carrier board 40 by conductive adhesive films 1420, 1440.

第27a~27f圖為根據本發明一實施例中的發光裝置製造方法之流程剖面圖，如第27a~27b圖所示，先在載板20上形成複數個發光元件2，其中電極142與144係接觸載板20。接著利用透明材料覆蓋複數個發光元件2。當透明材料固化後，透明材料便成為覆蓋發光元件2的透明支撐元件4。部分的透明材料也可能會進入發光元件2下方的電極142與144間空隙，並且部分填充或者完全填充發光元件2與載板20之間的空隙。 27a-27f are flow cross-sectional views showing a method of fabricating a light-emitting device according to an embodiment of the present invention. As shown in Figs. 27a-27b, a plurality of light-emitting elements 2 are formed on the carrier 20, wherein the electrodes 142 and 144 are formed. The carrier 20 is contacted. A plurality of light-emitting elements 2 are then covered with a transparent material. When the transparent material is cured, the transparent material becomes the transparent support member 4 covering the light-emitting element 2. Part of the transparent material may also enter the gap between the electrodes 142 and 144 below the light-emitting element 2, and partially fill or completely fill the gap between the light-emitting element 2 and the carrier 20.

如第27c圖所示，移除載板20並曝露出電極142與144的一側。接著，提供導電黏著材料。在此實施例中，導電黏著 材料為導電黏著膜1482，其描述可參考前述實施例中的描述。如第27d圖所示，於電極142與144暴露出的一側上覆蓋導電黏著膜1482，導電黏著膜1482與各個發光元件2的電極142與144電性連接。 As shown in Figure 27c, the carrier 20 is removed and one side of the electrodes 142 and 144 is exposed. Next, a conductive adhesive material is provided. In this embodiment, the conductive adhesive The material is a conductive adhesive film 1482, the description of which can be referred to the description in the foregoing embodiments. As shown in FIG. 27d, the conductive adhesive film 1482 is covered on the exposed side of the electrodes 142 and 144, and the conductive adhesive film 1482 is electrically connected to the electrodes 142 and 144 of the respective light-emitting elements 2.

如第27e圖所示，於導電黏著膜1482相對於電極142、144的一側覆蓋光阻層14。透過曝光顯影的製程，將對應於電極142與144間的光阻層14移除以曝露出部分之導電黏著膜1482。如第27f圖所示，移除曝露之導電黏著膜1482後再移除剩餘的光阻層14，使得一發光元件2中之電極142與144彼此物理性分開。切割(或其他分割手段)透明支撐元件4及導電黏著材料1480以分離各個發光元件2，因此形成各自獨立的發光裝置，如第27g圖所示。 As shown in Fig. 27e, the photoresist layer 14 is covered on one side of the conductive adhesive film 1482 with respect to the electrodes 142, 144. Through the process of exposure development, the photoresist layer 14 corresponding to the electrodes 142 and 144 is removed to expose a portion of the conductive adhesive film 1482. As shown in Fig. 27f, the exposed photoresist layer 1482 is removed and the remaining photoresist layer 14 is removed, so that the electrodes 142 and 144 in a light-emitting element 2 are physically separated from each other. The transparent support member 4 and the conductive adhesive material 1480 are cut (or otherwise divided) to separate the respective light-emitting elements 2, thus forming separate light-emitting devices, as shown in Fig. 27g.

在另一實施例中，如第27h圖所示，可於切割步驟中，選擇性地使一發光裝置包含複數個彼此串聯之發光元件2。因此，發光裝置可具有大於3V的操作電壓(例如一發光裝置具有一發光元件，發光裝置具有3V的操作電壓。當一發光裝置包含複數個發光元件，發光裝置可具有15V、21V、24V、33V、48V或其基本電壓整數倍的操作電壓) In another embodiment, as shown in Fig. 27h, a light-emitting device can be selectively included in the cutting step to include a plurality of light-emitting elements 2 connected in series with each other. Therefore, the illuminating device can have an operating voltage greater than 3 V (for example, a illuminating device has a illuminating element, and the illuminating device has an operating voltage of 3 V. When a illuminating device includes a plurality of illuminating elements, the illuminating device can have 15 V, 21 V, 24 V, 33 V. , 48V or its operating voltage of an integral multiple of the basic voltage)

在另一實施例中，當透明支撐元件4形成於電極142與144間之空隙時，可選擇性地完全或部分移除位於兩電極142與144之間的透明支撐元件。 In another embodiment, when the transparent support member 4 is formed in the gap between the electrodes 142 and 144, the transparent support member between the two electrodes 142 and 144 can be selectively removed completely or partially.

需注意的是，上述之製造方法係使用發光元件2作 為例子。然，發光元件2可先形成透明支撐元件4、及/或光學元件6、及/或波長轉換層30、及/或絕緣層122、124、126、及/或中間層146後，再使用相同製程方式以形成導電黏著材料於電極142、144上。詳細的結構如第19a~22e圖。 It should be noted that the above manufacturing method uses the light-emitting element 2 as a As an example. However, the light-emitting element 2 may first form the transparent support element 4, and/or the optical element 6, and/or the wavelength conversion layer 30, and/or the insulating layer 122, 124, 126, and/or the intermediate layer 146, and then use the same The process is formed to form a conductive adhesive material on the electrodes 142, 144. The detailed structure is shown in Figures 19a-22e.

在上述實施例中，導電黏著材料係以網版印刷方式形成於發光件元2上。但在其他實施例中，可透過鋼板印刷、塗佈、刷塗、旋塗、噴墨印刷等方式將導電黏著膠形成於發光元件2上。選擇性地，具有包覆體(capping agent)的金屬顆粒溶於一可揮發之溶劑中，再透過塗佈或噴墨印刷等形成於發光元件2上，接著，進行一加熱或/且加壓的步驟，移除溶劑或包覆體使得金屬顆粒接合於發光元件2上。溶劑的成分包含甲苯、己烷、或者具有4~10個碳的飽和或不飽和徑類。 In the above embodiment, the conductive adhesive material is formed on the light-emitting element 2 by screen printing. However, in other embodiments, the conductive adhesive can be formed on the light-emitting element 2 by means of steel plate printing, coating, brushing, spin coating, ink jet printing or the like. Optionally, the metal particles having a capping agent are dissolved in a volatile solvent, and then formed on the light-emitting element 2 by coating or inkjet printing, and then, a heating or/and pressurization is performed. In the step of removing the solvent or the coating body, the metal particles are bonded to the light-emitting element 2. The solvent component contains toluene, hexane, or a saturated or unsaturated diameter of 4 to 10 carbons.

需注意的是，在第19a~19f、21a~22b圖中，導電黏著材料形成於絕緣層122、124、126及電極142、144上。然，根據上述不同的製程方法，導電黏著材料可僅形成於電極142、144而不形成於絕緣層122、124、126上。在第20a~20f、22c~22e圖中，導電黏著材料僅形成於電極142、144上。 It should be noted that in the 19th to 19f, 21a to 22b, the conductive adhesive material is formed on the insulating layers 122, 124, 126 and the electrodes 142, 144. However, according to the different process methods described above, the conductive adhesive material may be formed only on the electrodes 142, 144 and not on the insulating layers 122, 124, 126. In the figures 20a-20f, 22c-22e, the conductive adhesive material is formed only on the electrodes 142, 144.

前述之實施例，係先將導電黏著材料形成於發光裝置或發光元件之一側後，再將發光裝置或發光元件固定於承載板40上。然而，導電黏著材料亦可先形成於承載板40上，再與發光裝置或發光元件接合並電性連接。需注意的是，發光裝置或發光元件與承載板之貼合條件(加熱及/或加壓)，如同前所述，於此將 不在撰述。 In the foregoing embodiment, the conductive adhesive material is first formed on one side of the light-emitting device or the light-emitting element, and then the light-emitting device or the light-emitting element is fixed on the carrier plate 40. However, the conductive adhesive material may be formed on the carrier 40 first, and then joined to the light-emitting device or the light-emitting element and electrically connected. It should be noted that the bonding conditions (heating and/or pressurization) of the light-emitting device or the light-emitting element and the carrier plate are as described above, and Not writing.

在其他實施例中，也可以選擇其他兼具導電性以及黏性的導電黏著材料，或者是對於高分子材料具有良好黏性以及導電性的材料或薄膜(例如：異方導電膠)。由於異方性導電膠主要在垂直方向提供導電性，在製程上可以選擇性地省略移除部分異方性導電膠的步驟(類似第27d-27f圖移除導電黏著材料的步驟)，因此減少移除步驟所花的時間。更者，可同時避免使用導電黏著材料時，應被移除之導電黏著材料移除不全所導致發光元件之電極間發生短路的情況。 In other embodiments, other conductive adhesive materials having electrical conductivity and viscosity, or materials or films having good adhesion and electrical conductivity to the polymer material (for example, an isotropic conductive adhesive) may be selected. Since the anisotropic conductive paste mainly provides conductivity in the vertical direction, the step of removing a part of the anisotropic conductive paste can be selectively omitted in the process (similar to the step of removing the conductive adhesive material in FIGS. 27d-27f), thereby reducing The time taken to remove the step. Moreover, when the conductive adhesive material is used at the same time, the removal of the conductive adhesive material to be removed may cause a short circuit between the electrodes of the light-emitting element.

上述發光裝置係設置於承載板40上，然亦可如第6圖所示，發光裝置可以設置於反射板10上，以使發光元件2所發出的光線可被反射。 The light-emitting device is disposed on the carrier 40. Alternatively, as shown in FIG. 6, the light-emitting device may be disposed on the reflector 10 so that the light emitted by the light-emitting element 2 can be reflected.

前述實施例中的發光裝置透過導電黏著材料與承載板40相連後，可進一步再與其他元件或構件組成一發光組件。如第28a圖所示，為根據本發明一實施例之發光裝置的示意圖。發光裝置1000R、1000G與1000B藉由導電黏著材料與承載板40上的電路電性連接，其中發光裝置1000R、1000G與1000B分別代表可以發出紅光、綠光與藍光的發光裝置1000且各自僅包含一個發光元件。當第28a圖的實施例應用於顯示器時，1000R、1000G與1000B的三個發光裝置構成為一顯示器的一畫素單元(pixel)，而發光裝置1000R、1000G與1000B則作為次畫素(sub-pixel)。透過承載板40上的電路設計可分開控制發光裝置1000R、1000G與 1000B，以顯示特定畫面或顏色。 After the light-emitting device in the foregoing embodiment is connected to the carrier plate 40 through the conductive adhesive material, it can further form a light-emitting component with other components or components. As shown in Fig. 28a, there is shown a schematic diagram of a light emitting device according to an embodiment of the present invention. The light-emitting devices 1000R, 1000G, and 1000B are electrically connected to the circuit on the carrier board 40 by a conductive adhesive material, wherein the light-emitting devices 1000R, 1000G, and 1000B respectively represent the light-emitting devices 1000 that can emit red, green, and blue light and each include only A light-emitting element. When the embodiment of FIG. 28a is applied to a display, three light-emitting devices of 1000R, 1000G, and 1000B are configured as a pixel unit of one display, and light-emitting devices 1000R, 1000G, and 1000B are used as sub-pixels (sub). -pixel). The illuminating devices 1000R and 1000G can be separately controlled by the circuit design on the carrier board 40. 1000B to display a specific picture or color.

第28b圖中，在相鄰的次畫素單元1000R、1000G與1000B之間更設置一具有吸光或反射效果之隔離層60。透過隔離層60的設置，使得相鄰的次畫素單元1000R、1000G與1000B所發出的光線彼此互不影響，因而可以提升顯示器呈現的畫面對比。隔離層60之成分可包白漆、黑漆或其組合。白漆包含複數個二氧化鈦粒子分散於一環氧樹脂基質或矽膠基質中。黑漆包含黑色物質(例如：碳或硫化鐵)分散於一環氧樹脂基質或矽膠基質中。 In Fig. 28b, an isolation layer 60 having a light absorbing or reflecting effect is further disposed between adjacent sub-pixel units 1000R, 1000G and 1000B. Through the arrangement of the isolation layer 60, the light emitted by the adjacent sub-pixel units 1000R, 1000G, and 1000B does not affect each other, thereby improving the contrast of the display presented by the display. The composition of the barrier layer 60 may be white lacquer, black lacquer or a combination thereof. The white lacquer comprises a plurality of titanium dioxide particles dispersed in an epoxy matrix or a silicone matrix. The black paint contains a black substance (for example, carbon or iron sulfide) dispersed in an epoxy resin matrix or a silicone matrix.

如第28c圖中的實施例，顯示器包含有複數個發光裝置1000P，其中每一個發光裝置1000P包含有三個發光元件2R、2G與2B。這三個發光元件分別可以提供紅色可見光波長、綠色可見光波長與藍色可見光波長。而每一個發光元件可以是元件內的半導體疊層包含有發出特定可見光的主動層，例如可發出紅色可見光、綠色可見光或藍色可見光。或者是，發光元件內的半導體疊層發出的光線經過發光元件內的波長轉換材料後發出紅色可見光、綠色可見光或藍色可見光。在本實施例中，由於一發光裝置1000P已包含有三個發光元件2R、2G與2B，因此一個發光裝置1000P即可構成為一顯示器的一畫素單元(pixel)。在第28c圖的實施例中，同樣也設置了隔離層60以達到增加畫面對比的效果。 As in the embodiment of Fig. 28c, the display comprises a plurality of light emitting devices 1000P, wherein each of the light emitting devices 1000P includes three light emitting elements 2R, 2G and 2B. The three light-emitting elements can respectively provide a red visible wavelength, a green visible wavelength, and a blue visible wavelength. Each of the light-emitting elements may be a semiconductor layer within the element containing an active layer that emits specific visible light, such as red, green, or blue visible light. Alternatively, the light emitted by the semiconductor stack in the light-emitting element passes through the wavelength conversion material in the light-emitting element to emit red visible light, green visible light, or blue visible light. In this embodiment, since one light-emitting device 1000P already includes three light-emitting elements 2R, 2G, and 2B, one light-emitting device 1000P can be configured as a pixel unit of a display. In the embodiment of Fig. 28c, the isolation layer 60 is also provided to achieve the effect of increasing the contrast of the picture.

需注意的是，除了利用導電黏著材料使承載板與發光元件電性連結的實施例之外，前述並未使用導電黏著材料的各 個實施例，也可以應用於第28a~28c圖以形成各種不同的顯示器。 It should be noted that, in addition to the embodiment in which the carrier plate and the light-emitting element are electrically connected by using the conductive adhesive material, the foregoing does not use the conductive adhesive material. Embodiments can also be applied to Figures 28a-28c to form a variety of different displays.

參考第29a~29e圖的實施例，發光元件2除了透過導電黏著材料連接到基板、承載板或者反射板之外，更可以連接到一散熱裝置以增進散熱效果。第29a圖為一種散熱裝置520之立體圖。第29b圖為散熱裝置520之上視圖。第29c圖為散熱裝置520之仰視圖。第29d圖為散熱裝置520沿著第29b圖中線段AA’的剖面側視圖。第29e圖為散熱裝置520沿著第29b圖中線段BB’的剖面側視圖。散熱裝置520包含散熱部521以及支撐部522，其中散熱部為導電材料，而支撐部為電性絕緣材料。支撐部522係夾置(clamp)散熱部521並暴露出部分散熱部521。支撐部522具有第一部份5221形成於散熱部521之間；第二部份5222係貫穿散熱部521；及第三部份5223覆蓋部分之散熱部521的上、下表面及側面。第一部分5221、第二部分5222及第三部分5223可為一體形成之結構。在其他實施例中，支撐部522可僅覆蓋散熱部521的上、下表面，而不覆蓋散熱部的側面。在第29b圖中，發光元件係透過前述導電黏著材料(圖未示)接合於曝露出之散熱部521上，此後，再利用散熱裝置以連接到基板、承載板或者反射板。 Referring to the embodiment of Figures 29a-29e, the light-emitting element 2 can be connected to a heat sink through a conductive adhesive material to the substrate, the carrier or the reflector to enhance the heat dissipation effect. Figure 29a is a perspective view of a heat sink 520. Figure 29b is a top view of the heat sink 520. Figure 29c is a bottom view of the heat sink 520. Figure 29d is a cross-sectional side view of the heat sink 520 along line AA' in Figure 29b. Figure 29e is a cross-sectional side view of the heat sink 520 along line BB' in Figure 29b. The heat sink 520 includes a heat dissipation portion 521 and a support portion 522, wherein the heat dissipation portion is a conductive material, and the support portion is an electrically insulating material. The support portion 522 clamps the heat radiating portion 521 and exposes a part of the heat radiating portion 521. The support portion 522 has a first portion 5221 formed between the heat dissipation portions 521, a second portion 5222 extending through the heat dissipation portion 521, and a third portion 5223 covering the upper and lower surfaces and side surfaces of the portion of the heat dissipation portion 521. The first portion 5221, the second portion 5222, and the third portion 5223 may be integrally formed. In other embodiments, the support portion 522 may cover only the upper and lower surfaces of the heat dissipation portion 521 without covering the side surface of the heat dissipation portion. In Fig. 29b, the light-emitting element is bonded to the exposed heat-dissipating portion 521 through the conductive adhesive material (not shown), and thereafter, a heat sink is used to connect to the substrate, the carrier or the reflector.

於一實施例中，導電黏著材料亦可應用為一發光元件中之打線墊(bonding pad)。如第30a圖所示，發光元件2為一垂直式之發光元件且包含一導電基板21、第一型半導體層212、一活性層213、及一第二型半導體層214。發光元件2更包含一第一電極層215形成於第二型半導體層214上，一第二電極層216 形成於導電基板21。導電黏著材料1420結合於第一電極層215上且作為一打線墊。導電黏著材料1420之描述可參考前述之實施例，且其結合於第一電極層215之方法如同結合於電極142、144上，為簡潔故，將不再撰述。第一電極層215或/及第二電極層216可包含多層結構，例如：Cr/Au、Cr/Cu、Cr/Pt/Au、Cr/Ti/Pt/Au、Ti/Cu、Ti/Au Au/BeAu/Au、Au/GeAu/Au等。導電黏著材料1420係結合於Au或Cu上。Au或Cu之厚度介於500nm~1μm。因導電黏著材料1420作為一打線墊，因此其厚度需介於15μm~50μm以方便後續打線製程。選擇性地，一透明層(例如：ITO、IZO、InO、SnO、CTO、ATO、AZO、ZTO、GZO、ZnO、IGO、GAZO或、類碳鑽(DLC)或GaP)可形成於第二型半導體層214與第一電極層215之間。如第30b圖所示，發光元件可為一水平式之發光元件。導電黏著材料1420結合於第一電極層215及第二電極層216上且作為打線墊。選擇性地，第一電極層215與第二電極層216間，可形成一阻擋層217。當導電黏著材料1420以印刷方式形成於電極層215、216上時，導電黏著材料1420可能會溢流而造成不必要的短路路徑，因此，藉由形成一阻擋層217來防止溢流間題。阻擋層217具有一大於電極層215、216之厚度。阻擋層217之厚度介於20μm~100μm。 In one embodiment, the conductive adhesive material can also be applied as a bonding pad in a light-emitting element. As shown in FIG. 30a, the light-emitting element 2 is a vertical light-emitting element and includes a conductive substrate 21, a first-type semiconductor layer 212, an active layer 213, and a second-type semiconductor layer 214. The light emitting device 2 further includes a first electrode layer 215 formed on the second type semiconductor layer 214 and a second electrode layer 216. Formed on the conductive substrate 21. The conductive adhesive material 1420 is bonded to the first electrode layer 215 and serves as a wire pad. The description of the conductive adhesive material 1420 can be referred to the foregoing embodiment, and the method of bonding to the first electrode layer 215 is as described on the electrodes 142, 144, which will not be described for the sake of brevity. The first electrode layer 215 or/and the second electrode layer 216 may comprise a multilayer structure such as: Cr/Au, Cr/Cu, Cr/Pt/Au, Cr/Ti/Pt/Au, Ti/Cu, Ti/Au Au /BeAu/Au, Au/GeAu/Au, etc. The conductive adhesive material 1420 is bonded to Au or Cu. The thickness of Au or Cu is between 500 nm and 1 μm. Since the conductive adhesive material 1420 is used as a wire mat, the thickness thereof needs to be between 15 μm and 50 μm to facilitate the subsequent wire bonding process. Optionally, a transparent layer (eg, ITO, IZO, InO, SnO, CTO, ATO, AZO, ZTO, GZO, ZnO, IGO, GAZO, or carbon-like drill (DLC) or GaP) may be formed in the second type The semiconductor layer 214 is between the first electrode layer 215 and the first electrode layer 215. As shown in Fig. 30b, the light-emitting element can be a horizontal light-emitting element. The conductive adhesive material 1420 is bonded to the first electrode layer 215 and the second electrode layer 216 and serves as a wire pad. Optionally, a barrier layer 217 may be formed between the first electrode layer 215 and the second electrode layer 216. When the conductive adhesive material 1420 is formed on the electrode layers 215, 216 in a printed manner, the conductive adhesive material 1420 may overflow to cause an unnecessary short circuit path, and thus, the overflow problem is prevented by forming a barrier layer 217. The barrier layer 217 has a thickness greater than that of the electrode layers 215, 216. The thickness of the barrier layer 217 is between 20 μm and 100 μm.

於一實施例中，導電黏著材料亦可應用為一固晶膠。第30c圖之發光元件具有與第30a圖類似的結構。相同的符號或是記號表示具有類似或是相同的元件、裝置或步驟。導電黏著 材料1420進一步形成於第二電極層216以作為固晶膠。同樣地，如第30d圖所示，於水平式之發光元件中，導電黏著材料1420進一步形成於基板21之相對於電極215、216之一側211，藉此以作為固晶膠，且後續固定於一支架(leadfram)、封裝體(例如：PLCC、EMC、或HTCC型式)、或電路板(PCB)上。例如：一焊錫形成於一電路板上；放置發光元件於焊錫上；接著，於220~280度的溫度下回焊(reflow)藉此固定發光元件於電路板上。 In one embodiment, the conductive adhesive material can also be applied as a solid glue. The light-emitting element of Fig. 30c has a structure similar to that of Fig. 30a. The same symbols or symbols indicate similar or identical elements, devices or steps. Conductive adhesion Material 1420 is further formed on second electrode layer 216 to act as a die bond. Similarly, as shown in FIG. 30d, in the horizontal type of light-emitting element, the conductive adhesive material 1420 is further formed on one side 211 of the substrate 21 with respect to the electrodes 215, 216, thereby serving as a solid crystal glue, and subsequently fixed. On a leadfram, package (for example: PLCC, EMC, or HTCC type), or on a circuit board (PCB). For example, a solder is formed on a circuit board; a light-emitting component is placed on the solder; and then reflowed at a temperature of 220 to 280 degrees to fix the light-emitting component on the circuit board.

需注意的是，前述實施例之發光元件或發光裝置固定於承載板上時，可再形成一焊錫於發光元件或發光裝置與承載板間，且於220~280度的溫度下進行回焊步驟。 It should be noted that when the light-emitting element or the light-emitting device of the foregoing embodiment is fixed on the carrier board, a solder may be further formed between the light-emitting element or the light-emitting device and the carrier plate, and the reflow step is performed at a temperature of 220 to 280 degrees. .

為簡潔故，上述有些發光元件並未繪製詳細的磊晶結構，然，上述之發光元件可包含一第一型半導體層、一活性層、及一第二型半導體層。選擇性地，發光元件可包含一成長基板，如砷化鎵(GaAs)、磷化鎵(GaP)、鍺(Ge)藍寶石、玻璃、鑽石、碳化矽(SiC)、矽、氮化鎵(GaN)、及氧化鋅(ZnO)所構成材料組群中之至少一種材料。。第一型半導體層及第二型半導體層例如為包覆層(cladding layer)或限制層(confinement layer)，可分別提供電子、電洞，使電子、電洞於活性層中結合以發光。第一型半導體層、一活性層、及一第二型半導體層之材料可包含Ⅲ-V族半導體材料，例如AlxInyGa(1-x-y)N或AlxInyGa(1-x-y)P，其中0≦x,y≦1；(x+y)≦1。依據活性層之材料，發光元件於一電流操作下可發出波峰值介於610nm及650nm之間的紅光，波峰值介於 530nm及600nm之間的黃光或綠光，或是波峰值介於450nm及490nm之間的藍光。 For the sake of brevity, some of the above-mentioned light-emitting elements do not have a detailed epitaxial structure. However, the above-mentioned light-emitting element may include a first type semiconductor layer, an active layer, and a second type semiconductor layer. Optionally, the light-emitting element may comprise a growth substrate such as gallium arsenide (GaAs), gallium phosphide (GaP), germanium (Ge) sapphire, glass, diamond, tantalum carbide (SiC), germanium, gallium nitride (GaN). And at least one material selected from the group consisting of zinc oxide (ZnO). . The first type semiconductor layer and the second type semiconductor layer are, for example, a cladding layer or a confinement layer, and respectively provide electrons and holes to combine electrons and holes in the active layer to emit light. The material of the first type semiconductor layer, an active layer, and a second type semiconductor layer may comprise a group III-V semiconductor material, such as AlxInyGa(1-xy)N or AlxInyGa(1-xy)P, where 0≦x, Y≦1; (x+y)≦1. According to the material of the active layer, the light-emitting element can emit red light with a peak value between 610 nm and 650 nm under a current operation, and the peak value is between Yellow or green light between 530 nm and 600 nm, or blue light with a peak between 450 nm and 490 nm.

以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。 The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.

Claims (10)

一發光裝置，包含：一半導體發光元件，包含一出光面，可發出一第一光線；；一透明支撐元件包含一側壁，該側壁環繞該半導體發光元件；一光學層位於該半導體發光元件的正上方，且具有大致平行於該出光面之一平坦面；以及一第一電極位於該發光元件遠離該光學層的一側，其中，該光學層具有反射該第一光線的性質，反射後的該第一光線經過介於該光學層與該第一電極之間的該側壁離開該發光裝置。 A light-emitting device comprising: a semiconductor light-emitting element comprising a light-emitting surface for emitting a first light; a transparent support member comprising a sidewall surrounding the semiconductor light-emitting element; an optical layer being located at the positive of the semiconductor light-emitting element Upper, and having a flat surface substantially parallel to the light emitting surface; and a first electrode located on a side of the light emitting element away from the optical layer, wherein the optical layer has a property of reflecting the first light, the reflected The first light exits the light emitting device through the sidewall between the optical layer and the first electrode. 如申請專利範圍第1項所述之發光裝置，其中，該側壁不垂直於該出光面。 The illuminating device of claim 1, wherein the side wall is not perpendicular to the illuminating surface. 如申請專利範圍第1項所述之發光裝置，其中，該側壁為一斜面。 The illuminating device of claim 1, wherein the side wall is a slope. 如申請專利範圍第1項所述之發光裝置，其中，該出光面具有一第一寬度，該光學層具有一最大寬度，該最大寬度小於或等於該第一寬度。 The illuminating device of claim 1, wherein the light-emitting mask has a first width, and the optical layer has a maximum width that is less than or equal to the first width. 如申請專利範圍第1項所述之發光裝置，其中，該光學層對該第一光線具有大於80%的反射率。 The illuminating device of claim 1, wherein the optical layer has a reflectance greater than 80% for the first ray. 如申請專利範圍第1項所述之發光裝置，其中，該光學層為一單層結構且包含一氧化物。 The illuminating device of claim 1, wherein the optical layer is a single layer structure and comprises an oxide. 如申請專利範圍第1項所述之發光裝置，其中，該光學層為一多層結構，且包含一分散式布拉格反射鏡。 The illuminating device of claim 1, wherein the optical layer is a multilayer structure and comprises a decentralized Bragg mirror. 一發光模組，包含：如申請專利範圍第1項之發光裝置；以及一承載板，包含一導電部，其中， 該第一電極與該導電部電性連接。 An illuminating module comprising: the illuminating device of claim 1; and a carrier plate comprising a conductive portion, wherein The first electrode is electrically connected to the conductive portion. 如申請專利範圍第8項所述之發光模組，更包含一光學元件覆蓋該發光裝置。 The illuminating module of claim 8, further comprising an optical component covering the illuminating device. 如申請專利範圍第9項所述之發光模組，更包含一波長轉換材料位於該光學元件之上。 The illuminating module of claim 9, further comprising a wavelength converting material on the optical component.