TWI625602B - 使用極紫外光微影技術之基板圖案化方法 - Google Patents
使用極紫外光微影技術之基板圖案化方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 238000000059 patterning Methods 0.000 title claims abstract description 42
- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 36
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Abstract
本文所揭技術提供具有次解析度特徵部之基板的連續圖案化方法。技術包括使用新穎沉積與移除技術。此導致具有在其中光阻定位於給定基板結構之間之交指狀光阻的基板。在結合使用極紫外光微影曝光之情形下,本文圖案化技術可在基板指定之處產生期望的切口與塊體。
Description
本揭露內容關於基板處理,且尤其關於包括圖案化半導體晶圓之圖案化基板的技術。相關申請案的交互參照
本專利申請案主張於2015年9月30日提出申請並題為「Method for Patterning a Substrate Using Extreme Ultraviolet Lithography」之美國臨時專利申請案第62/235,220號之優先權,其整體以參考文獻合併於此。
微影製程中縮小線寬的方法在歷史上涉及使用較大NA的光學(數值孔徑)、較短的曝光波長、或不同於空氣之界面介質(例如,水浸式)。因習知微影製程之解析度已接近理論極限,故製造商開始轉向雙重圖案化(DP)方法以克服光學限制。
在材料處理方法(如微影技術)中,產生圖案化層包含將輻射敏感材料(如光阻)的薄層施加至基板的上表面。將此輻射敏感材料轉變成可用作為蝕刻遮罩之起伏圖案,以將圖案移轉至基板之下方層中。輻射敏感材料的圖案化通常涉及使用例如微影系統,透過初縮遮罩(及相關光學元件)使光化輻射照射至輻射敏感材料上。隨後,可接續此曝光而使用顯影溶劑移除輻射敏感材料之照射區或未照射區域(取決於光阻調性與顯影劑調性)。此遮罩層可包含多重子層。
將輻射或光之圖案照射至基板上之習知微影技術具有各種挑戰,其限制受曝特徵部的尺寸並限制曝光特徵部之間的間距或間隔。減輕曝光限制之一習知技術為:使用雙重圖案化方法以容許在比目前使用習知微影技術之可行間距更小之情形下而圖案化更小的特徵部。
雙重圖案化或多重圖案化可成功地產生次解析度特徵。例如,自對準雙重圖案化(SADP)與自對準四重圖案化(SAQP)可產生具有相對小間距的線。例如,在使用四倍化之情形下,可產生作為結果之具有16奈米半間距的「間距四倍(pitch quad)」。使用間距四倍或其他結構的次解析度圖案之連續製造係具有挑戰性的。對於習知微影技術,利用具有如此小之臨界尺寸的特徵部產生切割與連接係具有挑戰性的。
本文所揭技術提供具有次解析度特徵部之基板的連續圖案化方法。技術包括使用新穎沉積與移除技術。此導致具有在其中光阻定位於給定基板結構之間的交指狀光阻的基板。在結合使用極紫外光微影曝光之情形下,本文圖案化技術可在基板指定之處產生期望的切口與塊體。
在一實施例中,圖案化基板的方法包括接收具有起伏圖案的基板。起伏圖案包括定義開口的結構,該開口具有比足以使大於124奈米之波長的電磁輻射得以進行波傳播更小的寬度。結構由對極紫外光輻射不敏感的材料構成。在基板上沉積第一光阻,形成在其中第一光阻填充由起伏圖案所定義之開口的第一光阻層。此亦導致從起伏圖案頂面延伸至第一光阻層頂面之第一光阻覆蓋層。移除第一光阻層之一部分,此包括移除第一光阻覆蓋層,使得第一光阻保留在由起伏圖案所定義的開口中。將基板暴露至來自極紫外光微影曝光系統之光化輻射的第一圖案。使用預定的顯影劑顯影第一光阻層的可溶部分。
當然,如本文所述之不同步驟的討論次序已為清楚之目的呈現。 一般而言,這些步驟可依任何合適的次序執行。此外,雖本文不同特徵部、技術、構造等之任一者可在本揭露內容的不同地方討論,然欲使概念之任一者可彼此獨立或相互組合地執行。因此,本發明可以許多不同方式實施與查看。
應注意本發明內容部分並無指定本揭露內容或主張的發明之每一實施例及/或漸增的新穎實施態樣。取而代之,本發明內容僅提供不同實施例及相對應之勝過習知技術之新穎性重點的初步討論。對於本發明與實施例的附加細節及/或可行觀點,將導引讀者至以下進一步討論之本揭露內容的實施方式部分與對應圖式。
本文所揭技術提供具有次解析度特徵部之基板的連續圖案化方法。技術包括使用新穎沉積與移除技術。此導致具有其中光阻定位於給定基板多重結構之間的交指狀光阻的基板。在結合使用極紫外光微影技術(EUV)之情形下,本文圖案化技術可在基板上間距指定之處產生期望的切口與塊體。
例如,在使用本文技術之情形下,旋塗式覆蓋硬遮罩可與EUV曝光整合在一起,其隨後可照射至包括間距四倍特徵部之特徵部中與之間。目前間距倍增技術(如間距四倍)可用以產生線與空間的圖案。此圖案有時稱為1維圖案或特徵部。然而,使用間距四倍圖案化之挑戰為不能以習知技術在期望的尺寸下產生切口與塊體。本文技術揭露用以產生使EUV曝光得以進行、或可利用EUV曝光之切口與塊體的方法。如此,EUV系統與曝光技術可用以產生次解析度尺寸圖案的切口與塊體。
一範例性實施例包括用以圖案化基板的方法。現參照圖1A與1B,接收具有起伏圖案107(形貌圖案)的基板105。起伏圖案107定位在下方層110上。在一些實施例中,下方層110與任何相關的膜不包括底部抗反射塗層(BARC)。換言之,在一些實施例中,無BARC在起伏圖案107之下。應注意包括字母「A」的圖號顯示對應具有「B」字母圖號的橫剖面圖。起伏圖案107包括定義開口的結構,該開口具有比足以使大於124奈米之波長的電磁輻射得以進行波傳播更小的寬度。例如,尺寸117顯示不足以使大於124奈米之光波長得以進行波傳播的開口。換言之,開口對於大於124奈米的光太小以至於無法穿透或傳播至定義的開口中。作為非限制性範例,因調整開口尺寸小至足以產生此波長傳播之典型禁止空間,故來自193nm微影曝光系統之193nm光無法傳播至定義的開口中。在另一實施例中,起伏圖案中定義的開口的寬度足以使7奈米與40奈米之間的波長得以進行電磁波傳播。在其他實施例中,起伏圖案107包括定義具有在4與40奈米之間、及/或5與20奈米之間的寬度之開口的結構。
起伏圖案107的結構(如線)由對極紫外光輻射不敏感的材料構成。換言之,起伏圖案107的結構不能接收來自於暴露至EUV輻射的溶解度偏移。一範例性材料可包括鈦氮化物或其他無機材料。起伏圖案及其上結構可由任何數量之製造技術(包括心軸形成、間隔物沉積、側壁圖像轉移等)產生。例如,形成線陣列可使用自對準特徵部倍增技術,其包括相對於初始間距或初始特徵部密度,而四倍化給定的起始間距密度或特徵部密度。半導體製造設備(包括微影掃描裝置、晶圓塗佈機/顯影機、蝕刻系統、清洗工具等)的組合可用以產生起伏圖案107。
在基板上沉積第一光阻。 這樣的沉積可藉由液體光阻之旋塗式沉積執行。此沉積形成其中第一光阻填充由起伏圖案107所定義之開口的第一光阻層121。形成第一光阻層121導致從起伏圖案107頂面延伸至第一光阻層頂面的第一光阻覆蓋層。尺寸124說明第一光阻層121之範例性覆蓋部分。應注意形成第一光阻層121可涉及任何必要或較佳的處理步驟(像是烘烤光阻以移除各種溶劑等)。圖2A與2B顯示此沉積步驟的範例性結果。
接著,移除第一光阻層121的一部分,此包括移除第一光阻層121的覆蓋層,使得第一光阻保留在由起伏圖案107定義的開口中。此刻,基板105包括具有填充其結構之間的空間之第一光阻層121的起伏圖案107(如圖3A與3B所示)。
可使用各種技術以移除光阻的覆蓋層。例如,使用電漿基礎蝕刻劑之回蝕製程可用以蝕刻光阻直到露出起伏圖案之頂面。在另一技術中,可執行酸擴散與顯影步驟,此包括在第一光阻層上沉積酸並使酸擴散一預定深度至第一光阻層中。如此的垂直擴散可藉由烘烤基板而達成。溫度與時間參數可精確地控制平均擴散深度,並因此控制溶解度偏移的深度。隨後顯影化學可用以溶解並移除現為可溶的覆蓋層。垂直擴散亦可藉由使用像素基礎之投影系統控制位置,以活化在基板選定區域內之或多或少的酸。另一技術可包括執行覆蓋層之化學機械拋光製程或其它物理移除。在使用任何選定類型之覆蓋層移除製程的情形下,光阻可凹陷至起伏圖案107的頂面下。
沉積與覆蓋層移除步驟因此導致:具有在對於大於124奈米之光波長太小以致於無法傳播的特徵部(如線)之間的光阻的基板。具有實質平坦化(移除覆蓋層)或甚至使用光阻凹陷至起伏圖案107下的基板有益於在曝光期間防止任何切口風險。
隨後將基板105暴露至來自極紫外光微影曝光系統之光化輻射175的第一圖案。圖4A顯示阻擋EUV輻射到達基板之一部分的光遮罩172。此對應如圖4B所示之陰影區域173。圖5描繪光遮罩172的俯視圖。給定的EUV光遮罩在基板上實質劃分一或更多區域以保留或移除。在圖4之特定範例中,期望保留在線之間相對小部分的第一光阻而移除剩餘光阻。其中將基板暴露至光化輻射的第一圖案包括定義切口與塊體之光化輻射的第一圖案。
EUV微影系統為習知可用,且通常使用波長為13奈米之EUV輻射。因EUV(或其他波長)之13nm波長夠小以在次解析度線之間傳播,故使用EUV之光微影曝光可使線之間的光阻溶解度偏移。換言之,EUV輻射具有夠小之波長以進入線之間。因此,線之間的材料可為光阻且具有溶解度偏移(從不溶性變為可溶性、或從可溶性變為不溶性)。因通常不可能使其中無底部抗反射塗層之光阻曝光,故此為有益的。而本文技術可在缺少下方BARC層之情況下,在相對小線之間的光阻材料中產生溶解度變化。
因僅EUV可貫穿此典型禁止區域,故在使用習知非EUV微影技術之情形下,線之間這樣的光化輻射曝光為不可行的。通常此區域對任何光而言太緊或小以致於無法穿過。然而,在使用EUV之情形下,在間距四倍或其他間距倍增圖案中使交指狀光阻成像為可行的。例如,在具有16nm空間之情形下,無法使用193nm微影技術成像,然使用13nm波長輻射之情形下,成像在這些小開口中發生。
應注意各種光阻調性與顯影劑調性可搭配本文技術使用。若選定光阻調性為負,則可使用正型顯影劑。在使用如此組合之情形下,使用暗場光遮罩將導致阻擋,而使用亮場光遮罩將導致切口。若選定光阻調性為正,則可使用負型顯影劑。在使用如此正型光阻與負型顯影劑組合之情形下,使用暗場光遮罩將導致塊體,而使用亮場光遮罩將導致切口。因此,熟知該領域技術者可理解,各種化學與圖案化選項為可用的。
使用157nm以上光波長之微影技術受益於抗反射塗層的使用,該抗反射塗層通常沉積在光阻層之下。這樣的抗反射塗層作用為防止自表面反射之圖像失真。熟知該技術領域者將理解:因EUV輻射(亦稱為軟x射線)通常貫穿地球上已知材料及/或導致二次電子散射,故在EUV環境下之抗反射塗層為錯誤的概念。因EUV光之物理性質實質上不同於157nm以上的光,故將非EUV微影技術之假定知識外推至EUV微影技術中導致材料需求的誤解。在使用適當的光阻調整之情形下,使用EUV曝光完全不需BARC。任選地,可包括掩埋擴散層。此擴散層(非提供抗反射或主張二次電子捕捉)僅僅包含化學酸負載(如光酸產生劑)以增強成像。此擴散層中之酸負載可對光阻層提供相對小部分的酸以改善成像。
在暴露至光化輻射175的第一圖案之後,使用第一預定顯影劑顯影第一光阻層的可溶部分。通常,顯影表示沉積或施加其溶解光阻可溶部分之液體顯影劑,隨後可自基板將溶解的光阻清洗掉。應注意,取決於特定光阻調性與顯影劑調性組合,可溶部分可為暴露至光化輻射的部分或遮蔽光化輻射的部分之任一者。圖6A與6B顯示顯影步驟之後的範例性結果。連接兩線之相對小部分並非第一光阻層121留下之全部。
此時可執行附加的圖案化曝光,或可執行圖案移轉。移轉第一組合圖案至下方層110中。第一組合圖案為:在移除第一光阻覆蓋層及顯影第一光阻的可溶部分之後,起伏圖案107與第一光阻層121剩餘部分的組合。圖7A與7B顯示:在移轉此第一組合圖案並移除起伏圖案107與第一光阻層121之後的範例性結果。下方層110現為基於第一組合圖案之起伏圖案。
在其它實施例中,在基板上沉積第二光阻形成第二光阻層,其中第二光阻填充由起伏圖案所定義之開口,並導致從起伏圖案頂面延伸至第二光阻頂面之第二光阻層的覆蓋層。移除第二光阻層之一部分包括移除第二光阻覆蓋層,使得第二光阻保留在由起伏圖案所定義之開口中。將基板暴露至來自極紫外光微影曝光系統之光化輻射的第二圖案。使用第二預定顯影劑顯影第二光阻的可溶部分。第一預定顯影劑與第二預定顯影劑可為不同或相同。
在此第二顯影步驟之後,可將第二組合圖案移轉至下方層中。第二組合圖案為:在移除第二光阻覆蓋層與顯影第二光阻層可溶部分之後,起伏圖案與第二光阻層之剩餘部分的組合。下方層可因此用作為記憶層。
可在缺少使用曝光之間的記憶層之情況下執行二或更多曝光。在顯影第一光阻的可溶部分後,可處理第一光阻之剩餘部分,使得第一光阻之剩餘部分不再對極紫外光輻射敏感。有各種化學、熱、及物理固化處理可用。例如,可以使用蝕刻室內之直流疊加的彈道電子流處理基板。
在使用各種切口遮罩、塊體遮罩、光阻調性、顯影劑調性、與記憶步驟的組合之情形下,可產生任何數量的圖案。圖8與9僅顯示可使用本文技術所產生之一對範例性圖案。在其他實施例中,例如使用交指狀光阻之第一EUV曝光可將阻擋記錄在記憶層中。接著以光阻(其隨後被銷毀)覆蓋基板,並以第二EUV遮罩暴露至圖案切口,隨後將其蝕刻移轉至記憶層中。記憶層中之複合圖案隨後可用作為蝕刻遮罩,或搭配附加的圖案化操作使用。因此,利用本文技術使許多習知期望但不可使用之圖案化操作得以進行。
在先前描述中,已提出特定細節,像是處理系統的特定幾何結構與在其中所用的各種元件與製程的描述。然而,應理解本文技術可在偏離這些特定細節的其他實施例中實現,且這樣的細節係為說明而非限制的目的。本文所揭實施例已參照附圖描述。類似地,為解釋之目的,提出特定數字、材料、及構造以提供徹底了解。然而,實施例可在缺少這樣的特定細節下實現。具有實質相同功能結構的元件以相同的參考符號表示,並因此省略任何冗餘的描述。
各種操作將以最有助於理解本發明的方式描述為複數分立操作。描述的次序不應被理解成暗示這些操作必定為次序相依。尤其,這些操作不需以呈現之次序執行。所述之操作可依不同於所述實施例中的次序而執行。於其他的實施例中,可執行各種附加操作及/或省略所描述的操作。
如同在此所用之「基板」或「目標基板」通常指依據本發明正進行製程之物件。基板可包括元件(尤其是半導體或其他電子元件)之任何材料的部分或結構,並且可例如為基礎基板結構(像是半導體晶圓)、初縮遮罩、或基礎基板結構上或覆蓋其該基礎基板結構之疊層(例如薄膜)。因此,基板不受限於任何特定的基礎結構、下方層或覆蓋層、圖案化或未圖案化,而是設想到包括任何這樣的疊層或基礎結構、及疊層及/或基礎結構之任何組合。描述可參照特定的基板樣式,但這僅為說明性目的。
熟知該技術領域者應理解可對以上說明的技術操作做出許多變化,而仍達到本發明之相同目的。欲使這樣的變化由本揭露內容的範疇所覆蓋。 因此,不欲使本發明實施例的先前描述係限制性的。相反,對本發明實施例的任何限制將在以下申請專利範圍中呈現。
105‧‧‧基板
107‧‧‧起伏圖案
110‧‧‧下方層
117‧‧‧尺寸
121‧‧‧光阻層
124‧‧‧尺寸
172‧‧‧光遮罩
173‧‧‧區域
175‧‧‧光化輻射
107‧‧‧起伏圖案
110‧‧‧下方層
117‧‧‧尺寸
121‧‧‧光阻層
124‧‧‧尺寸
172‧‧‧光遮罩
173‧‧‧區域
175‧‧‧光化輻射
參考結合附圖所考慮的以下詳細描述,本發明各種實施例及許多其伴隨的優點之更完整的瞭解將顯而易見。附圖未必按比例繪製,而將重點放在說明特徵、原理、與概念。
圖1A、2A、3A、4A、6A、與7A為顯示依據本文所揭實施例之流程的範例性基板段的橫剖面示意側視圖。
圖1B、2B、3B、4B、6B、與7B為顯示依據本文所揭實施例之流程的範例性基板段的橫剖面示意立體圖。
圖5為用以製造之範例性遮罩圖案的俯視圖。
圖8與9為顯示依據本文所揭實施例之圖案化結果的範例性基板段的橫剖面示意立體圖。
Claims (20)
- 一種圖案化基板的方法,該方法包含:(a)接收具有一起伏圖案之一基板,該起伏圖案包括定義開口之結構,該開口具有比足以使大於124奈米之波長的電磁輻射得以進行波傳播更小的寬度,該結構包含對極紫外光輻射不敏感的材料;(b)在該基板上沉積一第一光阻形成一第一光阻層,其中該第一光阻填充由該起伏圖案所定義之開口,並導致從該起伏圖案頂面延伸至該第一光阻層之一頂面之一第一光阻覆蓋層;(c)移除該第一光阻層之一部分,包括移除該第一光阻覆蓋層,使得該第一光阻保留在由該起伏圖案所定義之開口內;(d)將該基板暴露至來自一極紫外光微影曝光系統之光化輻射之一第一圖案;及(e)使用一第一預定顯影劑顯影該第一光阻層的可溶部分。
- 如申請專利範圍第1項之圖案化基板的方法,更包括:(f)移轉一第一組合圖案至一下方層中,該第一組合圖案係在移除該第一光阻覆蓋層之後與顯影該第一光阻的可溶部分之後,該起伏圖案與該第一光阻層之剩餘部分的組合。
- 如申請專利範圍第2項之圖案化基板的方法,更包括:(g)在該基板上沉積一第二光阻形成第二光阻層,其中該第二光阻填充由該起伏圖案所定義之開口,並導致從該起伏圖案頂面延伸至該第二光阻層之一頂面之一第二光阻覆蓋層;(h)移除該第二光阻層之一部分包括移除該第二光阻覆蓋層,使得該第二光阻保留在由該起伏圖案所定義之開口內;(i)將該基板暴露至來自一極紫外光微影曝光系統之光化輻射之一第二圖案;及(j)使用一第二預定顯影劑顯影該第二光阻層的可溶部分。
- 如申請專利範圍第3項之圖案化基板的方法,更包括:(k)移轉一第二組合圖案至該下方層中,該第二組合圖案係在移除該第二光阻覆蓋層之後與顯影該第二光阻層的可溶部分之後,該起伏圖案與該第二光阻層之剩餘部分的組合。
- 如申請專利範圍第1項之圖案化基板的方法,更包括:(l)在顯影該第一光阻層之可溶部分之後,處理該第一光阻層之剩餘部分,使得該第一光阻層之剩餘部分不再對極紫外輻射敏感。
- 如申請專利範圍第1項之圖案化基板的方法,其中接收該基板包括接收其中該起伏圖案包括使用一自對準特徵部倍增技術所形成之一線陣列之該基板。
- 如申請專利範圍第6項之圖案化基板的方法,其中該自對準特徵部倍增技術包括使一初始特徵部密度四倍化。
- 如申請專利範圍第1項之圖案化基板的方法,其中移除該第一光阻覆蓋層包括執行使用電漿基礎蝕刻劑之一回蝕製程。
- 如申請專利範圍第1項之圖案化基板的方法,其中移除該第一光阻覆蓋層包括執行一酸擴散與顯影步驟,該酸擴散與顯影步驟包括在該第一光阻層上沉積一酸,並使該酸擴散至該第一光阻層中一預定深度。
- 如申請專利範圍第1項之圖案化基板的方法,其中移除該第一光阻覆蓋層包括執行一化學機械拋光製程。
- 如申請專利範圍第1項之圖案化基板的方法,其中移除該第一光阻覆蓋層包括使該第一光阻凹陷至該起伏圖案之頂面之下。
- 如申請專利範圍第1項之圖案化基板的方法,其中接收該基板包括接收不包含底部抗反射塗層(BARC)之該基板。
- 如申請專利範圍第1項之圖案化基板的方法,其中接收該基板包括接收其中該起伏圖案中定義的開口寬度足以使在7奈米與40奈米之間的波長得以進行電磁波傳播之該基板。
- 如申請專利範圍第1項之圖案化基板的方法,其中將該基板暴露至光化輻射之該第一圖案包括定義一切口或一塊體之光化輻射之該第一圖案。
- 一種圖案化基板的方法,該方法包含:(a)接收具有一起伏圖案之一基板,該起伏圖案包括定義具有在4與40奈米之間的寬度的開口的結構,該結構包含對極紫外光輻射不敏感的材料;(b)在該基板上沉積一第一光阻形成一第一光阻層,其中該第一光阻填充由該起伏圖案所定義之開口,並導致由該起伏圖案頂面延伸至該第一光阻層之一頂面之一第一光阻覆蓋層;(c)移除該第一光阻層之一部分包括移除該第一光阻覆蓋層,使得該第一光阻層保留在由該起伏圖案所定義之開口內;(d)將該基板暴露至來自一極紫外光微影曝光系統之光化輻射之一第一圖案;及(e)使用一第一預定顯影劑顯影該第一光阻層的可溶部分。
- 如申請專利範圍第15項之圖案化基板的方法,其中由該起伏圖案所定義之開口寬度係在5奈米與20奈米之間。
- 如申請專利範圍第15項之圖案化基板的方法,更包括:(f)移轉一第一組合圖案至一下方層中,該第一組合圖案係在移除該第一光阻覆蓋層之後與顯影該第一光阻層的可溶部分之後,該起伏圖案與該第一光阻層之剩餘部分的組合。
- 如申請專利範圍第17項之圖案化基板的方法,更包括:(g)在該基板上沉積一第二光阻形成一第二光阻層,其中該第二光阻填充由該起伏圖案所定義之開口,並導致由該起伏圖案頂面延伸至該第二光阻層之一頂面之一第二光阻覆蓋層;(h)移除該第二光阻層之一部分包括移除該第二光阻覆蓋層,使得該第二光阻保留在由該起伏圖案所定義之開口內;(i)將該基板暴露至來自一極紫外光微影曝光系統之光化輻射之一第二圖案;及(j)使用一第二預定顯影劑顯影該第二光阻層的可溶部分。
- 如申請專利範圍第18項之圖案化基板的方法,更包括:(k)移轉一第二組合圖案至該下方層中,該第二組合圖案係在移除該第二光阻覆蓋層之後與顯影該第二光阻層的可溶部分之後,該起伏圖案與該第二光阻層之剩餘部分的組合。
- 如申請專利範圍第15項之圖案化基板的方法,更包括:(l)在顯影該第一光阻層的可溶部分之後,處理該第一光阻層之剩餘部分,使得該第一光阻層之剩餘部分不再對極紫外光輻射敏感。
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