TWI623733B - Pressure sensor and manufacture method thereof - Google Patents
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Abstract
一種壓力感測器包含一承載區域以及與承載區域空間上分離之一框體，其中壓力感測器之一微機電系統元件製作於承載區域內。上述壓力感測器以框體固定於封裝基板後，封裝基板或電路板之應力可被承載區域以及框體間之空間隔離，以避免微機電系統元件產生無法預期的形變。A pressure sensor includes a load bearing region and a frame that is spatially separated from the load bearing region, wherein one of the pressure sensor MEMS components is fabricated in the load bearing region. After the pressure sensor is fixed to the package substrate by the frame, the stress of the package substrate or the circuit board can be separated by the bearing area and the space between the frames to avoid unpredictable deformation of the MEMS component.
Description
本發明是有關一種壓力感測器以及其製造方法，特別是一種以微機電系統裝置所實現之壓力感測器以及其製造方法。The present invention relates to a pressure sensor and a method of manufacturing the same, and more particularly to a pressure sensor implemented by a microelectromechanical system device and a method of fabricating the same.
自1970年代微機電系統(microelectrical mechanical system，MEMS)裝置概念成形起，微機電系統裝置已從實驗室的探索對象進步至成為高階系統整合的對象，並已在大眾消費性裝置中有廣泛的應用，展現了驚人且穩定的成長。微機電系統裝置是藉由感測或控制可動之微機電系統元件之運動物理量可實現微機電系統裝置的各項功能。Since the formation of the concept of microelectromechanical systems (MEMS) devices in the 1970s, MEMS devices have evolved from the exploration of laboratories to become the object of high-order system integration, and have been widely used in mass consumer devices. , showing amazing and steady growth. The MEMS device can implement the functions of the MEMS device by sensing or controlling the physical quantity of motion of the movable MEMS component.
舉例而言，以微機電系統裝置所實現之壓力感測器是利用一氣密空腔與外部環境之壓力差來驅動微機電系統元件(例如一薄膜)產生形變，以量測外部環境之壓力變化。然而，在微機電系統裝置的封裝過程中或是將微機電系統裝置黏著於電路板的過程中都可能使封裝基板或電路板產生應力而翹曲。封裝基板或電路板翹曲將導致薄膜產生無法預期的形變，使初始電容值偏離一預設值。For example, a pressure sensor implemented by a MEMS device utilizes a pressure difference between a hermetic cavity and an external environment to drive a MEMS component (eg, a film) to deform to measure pressure changes in the external environment. . However, during the packaging process of the MEMS device or during the process of attaching the MEMS device to the circuit board, the package substrate or the circuit board may be stressed and warped. Warpage of the package substrate or board will cause undesired deformation of the film, causing the initial capacitance value to deviate from a predetermined value.
有鑑於此，如何避免封裝基板或電路板翹曲所導致之微機電系統元件之形變便是目前極需努力的目標。In view of this, how to avoid the deformation of the MEMS components caused by the warpage of the package substrate or the circuit board is an urgent task.
本發明提供一種壓力感測器以及其製造方法，其是將基板分為一承載區域以及空間上分離之一框體，且微機電系統元件製作於承載區域內。依據此結構，本發明之壓力感測器以框體固定於封裝基板後，封裝基板或電路板之應力可被承載區域以及框體間之空間隔離，以避免微機電系統元件產生無法預期的形變。The present invention provides a pressure sensor and a method of manufacturing the same, which divides a substrate into a load-bearing area and a space-separated frame, and the MEMS component is fabricated in the load-bearing area. According to this structure, after the pressure sensor of the present invention is fixed to the package substrate by the frame, the stress of the package substrate or the circuit board can be separated by the space between the bearing area and the frame to avoid unpredictable deformation of the MEMS component. .
本發明一實施例之壓力感測器包含一第一基板以及一第二基板。第一基板包含一第一表面、一相對之第二表面以及一電路層。電路層設置於第一基板之第二表面，並包含一第一電路、一第二電路以及多個第一導電接點。第一基板分成一承載區域、與承載區域空間上分離且圍繞承載區域之一框體以及一連接臂，其連接承載區域以及框體。第一電路以及第二電路設置於承載區域內。第二基板包含一第三表面以及一相對之第四表面，且第二基板以第三表面朝向第一基板設置於第一基板之第二表面側。第二基板與多個第一導電接點電性連接，且包含一微機電系統元件以及一參考元件。微機電系統元件設置於承載區域，與第一電路相對應，且與第一基板定義出一氣密空腔。參考元件設置於承載區域且與第二電路相對應，其中參考元件與第二電路維持一固定間距。A pressure sensor according to an embodiment of the invention includes a first substrate and a second substrate. The first substrate includes a first surface, an opposite second surface, and a circuit layer. The circuit layer is disposed on the second surface of the first substrate and includes a first circuit, a second circuit, and a plurality of first conductive contacts. The first substrate is divided into a bearing area, a frame that is spatially separated from the carrying area and surrounds the carrying area, and a connecting arm that connects the carrying area and the frame. The first circuit and the second circuit are disposed within the load bearing area. The second substrate includes a third surface and an opposite fourth surface, and the second substrate is disposed on the second surface side of the first substrate toward the first substrate with the third surface. The second substrate is electrically connected to the plurality of first conductive contacts, and includes a MEMS component and a reference component. The MEMS component is disposed in the load bearing region and corresponds to the first circuit and defines a gas-tight cavity with the first substrate. The reference component is disposed in the load bearing region and corresponds to the second circuit, wherein the reference component maintains a fixed spacing from the second circuit.
本發明另一實施例之壓力感測器之製造方法包含：提供一第一基板，其包含一第一表面、一相對之第二表面以及一電路層，其設置於第一基板之第二表面，並包含一第一電路、一第二電路以及多個第一導電接點；提供一第二基板，其包含一第三表面以及一相對之第四表面；形成一第一凹槽於電路層或第二基板之第三表面；將第二基板以第三表面朝向第一基板接合於第一基板之第二表面側，以定義出一氣密空腔；電性連接第一基板以及第二基板；圖案化第二基板，以形成一微機電系統元件以及一參考元件，其中微機電系統元件與第一電路相對應，以及參考元件與第二電路相對應，且與第二電路維持一固定間距；以及圖案化第一基板，以形成一承載區域、與承載區域空間上分離且圍繞承載區域之一框體以及一連接臂，其連接承載區域以及框體，其中第一電路以及第二電路設置於承載區域。A method of manufacturing a pressure sensor according to another embodiment of the present invention includes: providing a first substrate including a first surface, an opposite second surface, and a circuit layer disposed on the second surface of the first substrate And comprising a first circuit, a second circuit and a plurality of first conductive contacts; providing a second substrate comprising a third surface and an opposite fourth surface; forming a first recess in the circuit layer Or a third surface of the second substrate; bonding the second substrate to the first substrate on the second surface side of the first substrate with the third surface to define a gas-tight cavity; electrically connecting the first substrate and the second substrate Patterning the second substrate to form a MEMS component and a reference component, wherein the MEMS component corresponds to the first circuit, and the reference component corresponds to the second circuit and maintains a fixed spacing from the second circuit And patterning the first substrate to form a bearing area, a housing separated from the carrying area and surrounding the carrying area, and a connecting arm connecting the carrying area and the frame, wherein Circuit and a second circuit disposed on the supporting area.
以下藉由具體實施例配合所附的圖式詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。The purpose, technical contents, features, and effects achieved by the present invention will become more apparent from the detailed description of the appended claims.
以下將詳述本發明之各實施例，並配合圖式作為例示。除了這些詳細說明之外，本發明亦可廣泛地施行於其它的實施例中，任何所述實施例的輕易替代、修改、等效變化都包含在本發明之範圍內，並以申請專利範圍為準。在說明書的描述中，為了使讀者對本發明有較完整的瞭解，提供了許多特定細節；然而，本發明可能在省略部分或全部特定細節的前提下，仍可實施。此外，眾所周知的步驟或元件並未描述於細節中，以避免對本發明形成不必要之限制。圖式中相同或類似之元件將以相同或類似符號來表示。特別注意的是，圖式僅為示意之用，並非代表元件實際之尺寸或數量，有些細節可能未完全繪出，以求圖式之簡潔。The embodiments of the present invention will be described in detail below with reference to the drawings. In addition to the detailed description, the present invention may be widely practiced in other embodiments, and any alternatives, modifications, and equivalent variations of the described embodiments are included in the scope of the present invention. quasi. In the description of the specification, numerous specific details are set forth in the description of the invention. In addition, well-known steps or elements are not described in detail to avoid unnecessarily limiting the invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is to be noted that the drawings are for illustrative purposes only and do not represent the actual dimensions or quantities of the components. Some of the details may not be fully drawn in order to facilitate the simplicity of the drawings.
本發明之壓力感測器是以一微機電系統裝置加以實現。請參照圖1a以及圖1b，本發明之一實施例之壓力感測器包含一第一基板10以及一第二基板20。第一基板10包含一第一表面、一相對之第二表面以及一電路層11。於圖1b所示之實施例中，電路層11是設置於第一基板11之第二表面(即上表面)。依據設計，電路層11包含至少一金屬層，而曝露出來之金屬層可作為一第一電路11a、一第二電路11b以及多個第一導電接點11c、11d。於一實施例中，第一基板10可為一互補式金氧半導體(CMOS)基板、玻璃基板等。第一基板10進一步分成一承載區域101、一框體102以及一連接臂103。微機電系統裝置之主要結構製作於承載區域101內。舉例而言，第一電路11a以及第二電路11b設置於承載區域101內。框體102與承載區域101空間上分離且圍繞承載區域101設置。連接臂103則設置於承載區域101以及框體102之間，以連接承載區域101以及框體102。The pressure sensor of the present invention is implemented as a MEMS device. Referring to FIG. 1a and FIG. 1b, a pressure sensor according to an embodiment of the present invention includes a first substrate 10 and a second substrate 20. The first substrate 10 includes a first surface, an opposite second surface, and a circuit layer 11. In the embodiment shown in FIG. 1b, the circuit layer 11 is disposed on the second surface (ie, the upper surface) of the first substrate 11. According to the design, the circuit layer 11 includes at least one metal layer, and the exposed metal layer can serve as a first circuit 11a, a second circuit 11b, and a plurality of first conductive contacts 11c, 11d. In an embodiment, the first substrate 10 can be a complementary metal oxide semiconductor (CMOS) substrate, a glass substrate, or the like. The first substrate 10 is further divided into a bearing area 101, a frame 102, and a connecting arm 103. The main structure of the MEMS device is fabricated in the load bearing area 101. For example, the first circuit 11a and the second circuit 11b are disposed in the load bearing area 101. The frame 102 is spatially separated from the load-bearing area 101 and disposed around the load-bearing area 101. The connecting arm 103 is disposed between the carrying area 101 and the frame 102 to connect the carrying area 101 and the frame 102.
第二基板20包含一第三表面21以及一相對之第四表面22，且第二基板20以第三表面21朝向第一基板10設置於第一基板10之第二表面側。舉例而言，第一基板10與第二基板20之接合是以共晶鍵合(eutectic bonding)、熔接(fusion bond)、銲接以及黏合至少其中之一加以實現。第二基板20可經由導電結構23a、23b與多個第一導電接點11c、11d電性連接。第二基板20包含一微機電系統元件24以及一參考元件25。微機電系統元件24設置於承載區域101，且與第一基板10定義出一氣密空腔。如此，微機電系統元件24即可隨著外部壓力變化而產生形變。微機電系統元件24並與第一電路11a相對應，以構成一感測電容。參考元件25亦設置於承載區域101內，且與第二電路11b相對應。參考元件25與第二電路11b之間維持一固定間距，亦即參考元件25與第二電路11b間之間距不會隨著外部壓力變化而改變。依據此結構，參考元件25以及第二電路11b所構成之參考電容即為一定值。藉由計算感測電容值以及參考電容之差值即可計算出微機電系統元件24之形變量。The second substrate 20 includes a third surface 21 and an opposite fourth surface 22 , and the second substrate 20 is disposed on the second surface side of the first substrate 10 toward the first substrate 10 with the third surface 21 . For example, the bonding of the first substrate 10 and the second substrate 20 is achieved by at least one of eutectic bonding, fusion bonding, soldering, and bonding. The second substrate 20 can be electrically connected to the plurality of first conductive contacts 11c, 11d via the conductive structures 23a, 23b. The second substrate 20 includes a microelectromechanical system component 24 and a reference component 25. The MEMS component 24 is disposed on the carrier region 101 and defines a hermetic cavity with the first substrate 10. As such, the MEMS component 24 can be deformed as the external pressure changes. The MEMS component 24 corresponds to the first circuit 11a to form a sensing capacitor. The reference element 25 is also disposed within the load-bearing area 101 and corresponds to the second circuit 11b. The fixed distance between the reference element 25 and the second circuit 11b is maintained, that is, the distance between the reference element 25 and the second circuit 11b does not change with external pressure. According to this configuration, the reference capacitance formed by the reference element 25 and the second circuit 11b is a constant value. The shape variable of the MEMS component 24 can be calculated by calculating the difference between the sensed capacitance value and the reference capacitance.
於一實施例中，第一電路11a可設置於氣密空腔之一幾何中心，可以理解的是，與第一電路11a相對應之微機電系統元件24即可隨著外部壓力變化而產生較大之形變，以提高感測之靈敏度。相對的，第二電路11b靠近氣密空腔之側壁設置，則與第二電路11b相對應之參考元件25即因氣密空腔之側壁的支撐而與第二電路11b維持一固定間距。於一實施例中，參考元件25以及第二電路11b之間可設置至少一支撐元件111，以維持參考元件25以及第二電路11b間為一固定間距。於圖1a所示之實施例中，支撐元件111為一牆狀。但不限於此，支撐元件111亦可為柱狀(如圖7a所示)、環狀(如圖7b所示)、弧狀(如圖7c所示)或其它適當之結構。In an embodiment, the first circuit 11a can be disposed at a geometric center of the airtight cavity. It can be understood that the MEMS component 24 corresponding to the first circuit 11a can be generated as the external pressure changes. Large deformation to improve the sensitivity of sensing. In contrast, the second circuit 11b is disposed adjacent to the sidewall of the airtight cavity, and the reference component 25 corresponding to the second circuit 11b is maintained at a fixed distance from the second circuit 11b by the support of the sidewall of the airtight cavity. In an embodiment, at least one supporting element 111 may be disposed between the reference component 25 and the second circuit 11b to maintain a fixed spacing between the reference component 25 and the second circuit 11b. In the embodiment shown in Figure 1a, the support member 111 is in the form of a wall. Without being limited thereto, the support member 111 may also be cylindrical (as shown in Figure 7a), annular (as shown in Figure 7b), curved (as shown in Figure 7c) or other suitable structure.
請再參照圖1b，將本發明之壓力感測器以第一基板10之框體102接合於封裝基板30時，由於包含微機電系統元件24之承載區域101未固定於封裝基板30，因此，封裝基板30之應力只會作用在框體102上，亦即封裝基板30之應力被承載區域101以及框體102間之空間隔離。換言之，微機電系統元件24不會因封裝基板30之應力而產生無法預期的形變。於一實施例中，框體102之第一表面可設置至少一柱腳104，使第一基板10之承載區域101以及封裝基板30之間具有一間隙。如此一來，承載區域101內之微機電系統元件24可進一步避免因封裝基板30之應力而產生無法預期的形變。Referring to FIG. 1b, when the pressure sensor of the present invention is bonded to the package substrate 30 by the frame 102 of the first substrate 10, since the bearing region 101 including the MEMS device 24 is not fixed to the package substrate 30, The stress of the package substrate 30 only acts on the frame 102, that is, the stress of the package substrate 30 is isolated by the space between the load-bearing area 101 and the frame 102. In other words, the MEMS component 24 does not undergo an undesired deformation due to the stress of the package substrate 30. In one embodiment, at least one leg 104 may be disposed on the first surface of the frame 102 to provide a gap between the bearing area 101 of the first substrate 10 and the package substrate 30. As such, the MEMS component 24 within the load-bearing region 101 can further avoid unpredictable deformation due to stress on the package substrate 30.
於一實施例中，連接臂103可為多個，且具有至少一轉折部。舉例而言，於圖1a所示之實施例中，連接臂103為二個L型結構且連接於承載區域101之對角位置。依據此結構，框體102受到封裝基板30之應力時，L型結構之連接臂103可產生形變以吸收應力。於一實施例中，請參照圖5，連接臂103可為四個U型結構。同樣的，U型結構之連接臂103亦可因封裝基板30之應力而產生形變以吸收應力。於一實施例中，請參照圖6，連接臂103可為單一之直條狀結構，且連接於承載區域101之一端。由於承載區域101之其它端為開放端，因此，承載區域101不會受到封裝基板30之應力而產生形變。In an embodiment, the connecting arm 103 can be multiple and have at least one turning portion. For example, in the embodiment shown in FIG. 1a, the connecting arms 103 are of two L-shaped configurations and are connected to diagonal positions of the load-bearing area 101. According to this configuration, when the frame 102 is subjected to the stress of the package substrate 30, the connecting arm 103 of the L-shaped structure can be deformed to absorb the stress. In an embodiment, referring to FIG. 5, the connecting arms 103 can be four U-shaped structures. Similarly, the U-shaped connecting arm 103 can also be deformed by the stress of the package substrate 30 to absorb stress. In an embodiment, referring to FIG. 6, the connecting arm 103 can be a single straight strip structure and connected to one end of the carrying area 101. Since the other ends of the load-bearing area 101 are open ends, the load-bearing area 101 is not deformed by the stress of the package substrate 30.
請再參照圖1a以及圖1b，於圖1a以及圖1b所示之實施例中，導電結構23a可作為微機電系統元件24與電路層11電性連接之導電路徑。而導電結構23b設置於框體102於第二基板20之第四表面22的投影區域內，以作為與外部電性連接之第二導電接點。因此，微機電系統元件24可經由導電結構23a、電路層11之跡線11g(如圖6所示)以及導電結構23b與外部電性連接。可以理解的是，第二基板20可設置溝槽27b使多個導電結構23b彼此電性獨立。Referring to FIG. 1a and FIG. 1b, in the embodiment shown in FIG. 1a and FIG. 1b, the conductive structure 23a can serve as a conductive path for the MEMS component 24 to be electrically connected to the circuit layer 11. The conductive structure 23b is disposed in the projection area of the frame 102 on the fourth surface 22 of the second substrate 20 to serve as a second conductive contact electrically connected to the outside. Therefore, the MEMS component 24 can be electrically connected to the outside via the conductive structure 23a, the trace 11g of the circuit layer 11 (as shown in FIG. 6), and the conductive structure 23b. It can be understood that the second substrate 20 can be provided with the grooves 27b to electrically separate the plurality of conductive structures 23b from each other.
請參照圖2a以及圖2b，於一實施例中，第二基板20僅設置於承載區域101內，因此，設置於框體102區域內之第一導電接點11d未被第二基板20覆蓋，而可直接作為與外部電性連接之導電接點。舉例而言，製作適當之導電結構11e與第一導電接點11d即可作為與外部電性連接之導電接點。Referring to FIG. 2a and FIG. 2b, in an embodiment, the second substrate 20 is disposed only in the carrying region 101. Therefore, the first conductive contact 11d disposed in the region of the frame 102 is not covered by the second substrate 20. It can be directly used as a conductive contact that is electrically connected to the outside. For example, the appropriate conductive structure 11e and the first conductive contact 11d can be fabricated as conductive contacts that are electrically connected to the outside.
微機電系統元件24之厚度以及微機電系統元件24與第一電路11a之間距能夠以多種適當之方式加以實現。舉例而言，如圖1b以及圖2b所示，第二基板20為相同之厚度，而微機電系統元件24與第一電路11a之間距則是由移除部分電路層11所定義。請參照圖3，於一實施例中，可於第二基板20之第三表面21形成凹槽26，以形成適當厚度之微機電系統元件24以及微機電系統元件24與第一電路11a之適當間距。請參照圖4，於一實施例中，亦可於第二基板20之第四表面22形成凹槽26，以形成適當厚度之微機電系統元件24，而微機電系統元件24與第一電路11a之間距則是移除部分電路層11所形成。圖3以及圖4所示之實施例中，第一基板10與第二基板20是以共晶鍵合方式加以接合。因此，利用適當之導電材料11f、23c即可電性連接第二基板20以及電路層11之第一導電接點11c。The thickness of the MEMS component 24 and the distance between the MEMS component 24 and the first circuit 11a can be implemented in a variety of suitable manners. For example, as shown in FIG. 1b and FIG. 2b, the second substrate 20 is of the same thickness, and the distance between the MEMS element 24 and the first circuit 11a is defined by the removed portion of the circuit layer 11. Referring to FIG. 3, in an embodiment, a recess 26 may be formed on the third surface 21 of the second substrate 20 to form a suitable thickness of the MEMS component 24 and the MEMS component 24 and the first circuit 11a. spacing. Referring to FIG. 4, in an embodiment, a recess 26 may be formed on the fourth surface 22 of the second substrate 20 to form a MEMS component 24 of a suitable thickness, and the MEMS component 24 and the first circuit 11a. The distance between them is formed by removing part of the circuit layer 11. In the embodiment shown in FIGS. 3 and 4, the first substrate 10 and the second substrate 20 are joined by eutectic bonding. Therefore, the second substrate 20 and the first conductive contact 11c of the circuit layer 11 can be electrically connected by using the appropriate conductive materials 11f, 23c.
請參照圖8a至圖8i，以說明圖1b所示之本發明之壓力感測器之製造方法。首先，提供一第一基板10，其包含一第一表面10a、一相對之第二表面10b以及一電路層11，如圖8a所示。電路層11設置於第一基板10之第二表面10b。電路層11則包含一第一電路11a、一第二電路11b以及多個第一導電接點11c、11d。雖然圖8a中所示為一維之剖面圖，但本領域中具有通常知識者應能明白電路層11中所形成的為一具有指定幾何形狀之二維電路圖案。電路層11之詳細製程已為本發明所屬技術領域中具有通常知識者所熟知，在此不再贅述。於一實施例中，第一基板10可為任何具有適宜機械剛性的基板，包括互補式金氧半導體基板、玻璃基板等。雖然這些剖面圖中僅顯示單一裝置，但可以理解的是，於單一基板上可製造多個晶粒。因此，這些圖中所示的單一裝置僅為代表，並非用以限制本發明於單一裝置之製造方法。於本說明書中將更完整的描述以晶圓級製程於一基板上製造多個晶粒或裝置。於製造裝置後，再利用切割(dicing)與切單(singulation)技術產生單獨的裝置封裝以於各種應用中使用。Please refer to FIG. 8a to FIG. 8i for explaining the manufacturing method of the pressure sensor of the present invention shown in FIG. 1b. First, a first substrate 10 is provided which includes a first surface 10a, an opposite second surface 10b, and a circuit layer 11, as shown in Figure 8a. The circuit layer 11 is disposed on the second surface 10b of the first substrate 10. The circuit layer 11 includes a first circuit 11a, a second circuit 11b, and a plurality of first conductive contacts 11c, 11d. Although a one-dimensional cross-sectional view is shown in Figure 8a, one of ordinary skill in the art will appreciate that a two-dimensional circuit pattern having a specified geometry is formed in circuit layer 11. The detailed process of the circuit layer 11 is well known to those of ordinary skill in the art to which the present invention pertains, and will not be described herein. In an embodiment, the first substrate 10 can be any substrate having suitable mechanical rigidity, including a complementary MOS substrate, a glass substrate, and the like. Although only a single device is shown in these cross-sectional views, it will be understood that multiple dies can be fabricated on a single substrate. Therefore, the single devices shown in the figures are merely representative and are not intended to limit the method of manufacture of the invention in a single device. A more complete description will be made in this specification to fabricate a plurality of dies or devices on a substrate in a wafer level process. After the device is fabricated, a separate device package is created using dicing and singulation techniques for use in a variety of applications.
接著，形成一第一凹槽12a於第一基板10之電路層11，使第一電路11a以及第二電路11b曝露出來，如圖8b所示。第一凹槽12a的形成可利微影及蝕刻程序加以實現。於微影程序中，蝕刻罩幕之尺寸可嚴格控制，且能夠以任何能抵抗用以蝕刻程序之合適材料形成。一特定實施例是使用氮化矽(Si 3N 4)蝕刻罩幕。蝕刻程序可包含一或多個蝕刻程序，例如非等向性蝕刻、氧化物蝕刻、反應性離子蝕刻(RIE)等。可以理解的是，在第一凹槽12a內保留部分電路層即可作為一支撐元件111。於一實施例中，於此步驟可同時形成凹槽12b，使第一導電接點11c、11d曝露出來。此外，亦可於此步驟形成凹槽12c並曝露出第一基板10之第二表面10b，以圖案化電路層11。圖案化之電路層11是對應後續製程所形成之第一基板10之承載區域101、一框體102以及一連接臂102。於一實施例中，電路層11亦可不需經過圖案化之步驟，而待後續圖案化第一基板10之製程時一併圖案化電路層11。 Next, a first recess 12a is formed on the circuit layer 11 of the first substrate 10 to expose the first circuit 11a and the second circuit 11b, as shown in FIG. 8b. The formation of the first recess 12a can be achieved by lithography and etching procedures. In the lithography process, the size of the etch mask can be tightly controlled and can be formed in any suitable material that is resistant to the etching process. A particular embodiment is to etch a mask using tantalum nitride (Si 3 N 4 ). The etch process can include one or more etch processes, such as anisotropic etch, oxide etch, reactive ion etch (RIE), and the like. It can be understood that a part of the circuit layer can be retained as a supporting element 111 in the first groove 12a. In an embodiment, the step 12b can be simultaneously formed in this step to expose the first conductive contacts 11c, 11d. In addition, the recess 12c may be formed in this step and the second surface 10b of the first substrate 10 may be exposed to pattern the circuit layer 11. The patterned circuit layer 11 is a bearing area 101 of the first substrate 10 formed by a subsequent process, a frame 102, and a connecting arm 102. In one embodiment, the circuit layer 11 may also need to be patterned, and the circuit layer 11 is patterned together when the process of the first substrate 10 is subsequently patterned.
接著，提供一第二基板20，其包含一第三表面21以及一相對之第四表面22，並將第二基板20以第三表面21朝向第一基板10接合於第一基板10之第二表面10b，以定義出一氣密空腔，亦即密封第一凹槽12a，如圖8c所示。舉例而言，第一基板10與第二基板20之接合能夠以共晶鍵合、熔接、銲接以及黏合至少其中之一加以實現。需注意的是，圖8b以及圖8c所示之步驟可依據不同的微機電系統裝置設計而加以修改。舉例而言，製造圖3所示之微機電系統裝置時，即無需於電路層11形成第一凹槽12a，而是在第二基板20之第三表面21形成凹槽26。Next, a second substrate 20 is provided, which includes a third surface 21 and an opposite fourth surface 22, and the second substrate 20 is bonded to the first substrate 10 with the third surface 21 toward the first substrate 10 Surface 10b defines a gas-tight cavity, i.e., seals first recess 12a, as shown in Figure 8c. For example, the bonding of the first substrate 10 and the second substrate 20 can be achieved by at least one of eutectic bonding, welding, soldering, and bonding. It should be noted that the steps shown in Figures 8b and 8c can be modified depending on the design of the different MEMS device. For example, when the MEMS device shown in FIG. 3 is fabricated, it is not necessary to form the first recess 12a in the circuit layer 11, but the recess 26 is formed on the third surface 21 of the second substrate 20.
接著，以一研磨(grinding)及/或其它薄化(thinning)程序薄化第二基板20，以達成指定之厚度，如圖8d所示。於一些實施例中，薄化後之第二基板20的剩餘厚度大約介於5μm至30μm，使微機電系統元件24能隨著壓力變化而產生形變。指定之厚度可用傳統薄化技術如化學機械研磨(CMP)及/或反應性離子蝕刻(RIE)達成。由於圖8d所示之實施例中沒有結構可作為擋止層以使薄化程序終止，薄化程序採用了精準之控制。假如沒有精準的控制，則薄化程序可能產生比指定厚度要薄或厚的第二基板20，因而影響後續所製造之微機電系統裝置之性能。於其它實施例中，將一蝕刻擋止層與第二基板20結合，以便於薄化程序之精準控制。本領域中具有通常知識者應能辨認許多本發明之變化、修改以及置換。Next, the second substrate 20 is thinned by a grinding and/or other thinning procedure to achieve a specified thickness, as shown in Figure 8d. In some embodiments, the remaining thickness of the thinned second substrate 20 is between about 5 μm and 30 μm, allowing the MEMS component 24 to deform as pressure changes. The specified thickness can be achieved using conventional thinning techniques such as chemical mechanical polishing (CMP) and/or reactive ion etching (RIE). Since there is no structure in the embodiment shown in Fig. 8d as a stop layer to terminate the thinning process, the thinning procedure uses precise control. If there is no precise control, the thinning process may result in a second substrate 20 that is thinner or thicker than the specified thickness, thus affecting the performance of the subsequently fabricated MEMS device. In other embodiments, an etch stop layer is combined with the second substrate 20 to facilitate precise control of the thinning process. Many variations, modifications, and permutations of the present invention should be recognized by those of ordinary skill in the art.
接著，電性連接第一基板10以及第二基板20。於一實施例中，於第二基板20形成導電結構23a、23b即可電性連接電路層11之第一導電接點11c、11d，如圖8e所示。舉例而言，利用微影、蝕刻程序於第二基板20形成貫孔貫穿第二基板20之第三表面21以及第四表面22，以曝露出電路層11之第一導電接點11c、11d，接著於貫孔中填充導電材料，例如鎢，最後於第二基板20之第四表面22形成導電層與貫孔中之導電材料即可形成與電路層11電性連接之導電結構23a、23b。Next, the first substrate 10 and the second substrate 20 are electrically connected. In one embodiment, the conductive structures 23a, 23b are formed on the second substrate 20 to electrically connect the first conductive contacts 11c, 11d of the circuit layer 11, as shown in FIG. 8e. For example, the third substrate 20 and the fourth surface 22 of the second substrate 20 are formed through the second substrate 20 by using a lithography and etching process to expose the first conductive contacts 11c, 11d of the circuit layer 11. Then, a conductive material, such as tungsten, is filled in the through hole, and finally a conductive layer and a conductive material in the through hole are formed on the fourth surface 22 of the second substrate 20 to form the conductive structures 23a, 23b electrically connected to the circuit layer 11.
接著，利用微影、蝕刻程序圖案化第二基板20，以定義一微機電系統元件24以及一參考元件25，其中微機電系統元件24與電路層11之第一電路11a相對應；參考元件25與電路層11之第二電路11b相對應，如圖8f所示。舉例而言，利用微影、蝕刻程序於第二基板20上形成溝槽27a以定義微機電系統元件24以及參考元件25。此外，於第二基板20上形成溝槽27b使多個導電結構23b彼此電性獨立。於圖8f所示之實施例中，溝槽27a與電路層11之凹槽12c相對應。可以理解的是，製造圖2b所示之微機電系統裝置時，移除大部分之第二基板20，僅保留承載區域101內之第二基板20即可。Next, the second substrate 20 is patterned by a lithography, etching process to define a MEMS component 24 and a reference component 25, wherein the MEMS component 24 corresponds to the first circuit 11a of the circuit layer 11; Corresponding to the second circuit 11b of the circuit layer 11, as shown in Fig. 8f. For example, trenches 27a are formed on second substrate 20 using lithography, etching procedures to define microelectromechanical system components 24 and reference components 25. Further, the trench 27b is formed on the second substrate 20 such that the plurality of conductive structures 23b are electrically independent of each other. In the embodiment shown in Fig. 8f, the groove 27a corresponds to the groove 12c of the circuit layer 11. It can be understood that when manufacturing the MEMS device shown in FIG. 2b, most of the second substrate 20 is removed, and only the second substrate 20 in the carrying region 101 is retained.
接著，以一研磨及/或其它薄化程序薄化第一基板10，以達成指定之厚度，如圖8g所示。於一些實施例中，薄化後之第一基板10的剩餘厚度約小於500μm。Next, the first substrate 10 is thinned by a grinding and/or other thinning process to achieve a specified thickness, as shown in Figure 8g. In some embodiments, the remaining thickness of the thinned first substrate 10 is less than about 500 [mu]m.
接著，利用微影、蝕刻程序於第一基板10之第一表面10a形成一第二凹槽13，使第一基板10之第一表面10a側產生高度差，如圖8h所示。第二凹槽13的位置對應於承載區域101，使承載區域101之厚度較薄。相對的，第一基板10厚度較厚的位置即可作為一柱腳104，其位於框體102區域內。需注意的是，圖8h所示之步驟可加以省略，亦即承載區域101與框體102之間不具有高度差。Then, a second recess 13 is formed on the first surface 10a of the first substrate 10 by using a lithography and etching process to cause a height difference on the first surface 10a side of the first substrate 10, as shown in FIG. 8h. The position of the second groove 13 corresponds to the load-bearing area 101, so that the thickness of the load-bearing area 101 is thin. In contrast, the thicker position of the first substrate 10 can be used as a leg 104 in the region of the frame 102. It should be noted that the step shown in FIG. 8h can be omitted, that is, there is no height difference between the bearing area 101 and the frame 102.
最後，利用微影、蝕刻程序形成溝槽14以圖案化第一基板10。圖案化後之第一基板10分為承載區域101、框體102以及連接臂103，其中第一電路11a以及第二電路11b設置於承載區域101內，如圖8i所示。可以理解的是，與第一電路11a以及第二電路11b相對應之微機電系統元件24以及參考元件25亦即位於承載區域101內。本發明之壓力感測器之製造方法更包含將第一基板10以框體102之第一表面10a接合於一封裝基板30，如此即形成如圖1b所示之結構。需注意的是，圖1a至圖7c所示之實施例皆可藉由修改上述製程加以實現，在此不再贅述。Finally, the trenches 14 are formed using a lithography, etching process to pattern the first substrate 10. The patterned first substrate 10 is divided into a carrying area 101, a frame 102, and a connecting arm 103, wherein the first circuit 11a and the second circuit 11b are disposed in the carrying area 101 as shown in FIG. 8i. It can be understood that the MEMS element 24 and the reference element 25 corresponding to the first circuit 11a and the second circuit 11b are also located in the carrying area 101. The method of manufacturing the pressure sensor of the present invention further comprises bonding the first substrate 10 to the package substrate 30 with the first surface 10a of the frame 102, thus forming a structure as shown in FIG. 1b. It should be noted that the embodiments shown in FIG. 1a to FIG. 7c can be implemented by modifying the above process, and details are not described herein again.
綜合上述，本發明之壓力感測器以及其製造方法，其是將基板分為一承載區域以及與承載區域空間上分離之一框體，且微機電系統元件製作於承載區域內。依據此結構，本發明之壓力感測器以框體固定於封裝基板後，因承載區域未與封裝基板接合，因此，封裝基板或電路板之應力可被承載區域以及框體間之空間隔離，以避免微機電系統元件產生無法預期的形變。較佳者，承載區域以及封裝基板間具有間隙可進一步隔離封裝基板或電路板之應力。In summary, the pressure sensor of the present invention and the manufacturing method thereof are characterized in that the substrate is divided into a bearing area and a frame body is spatially separated from the carrying area, and the MEMS element is fabricated in the carrying area. According to this structure, after the pressure sensor of the present invention is fixed to the package substrate by the frame, since the bearing area is not bonded to the package substrate, the stress of the package substrate or the circuit board can be separated by the space between the bearing area and the frame. To avoid unpredictable deformation of MEMS components. Preferably, the load-bearing area and the gap between the package substrates further isolate the stress of the package substrate or the circuit board.
以上所述之實施例僅是為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據以實施，當不能以之限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。The embodiments described above are only intended to illustrate the technical idea and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
10 第一基板 101 承載區域 102 框體 103 連接臂 104 柱腳 10a 第一表面 10b 第二表面 11 電路層 111 支撐元件 11a 第一電路 11b 第二電路 11c、11d 第一導電接點 11e 導電結構 11f 導電材料 11g 跡線 12a 第一凹槽 12b、12c 凹槽 13 第二凹槽 14 溝槽 20 第二基板 21 第三表面 22 第四表面 23a、23b 導電結構 23c 導電材料 24 微機電系統元件 25 參考元件 26 凹槽 27a、27b 溝槽 30 封裝基板10 first substrate 101 bearing area 102 frame 103 connecting arm 104 column foot 10a first surface 10b second surface 11 circuit layer 111 supporting element 11a first circuit 11b second circuit 11c, 11d first conductive contact 11e conductive structure 11f Conductive material 11g Trace 12a First groove 12b, 12c Groove 13 Second groove 14 Groove 20 Second substrate 21 Third surface 22 Fourth surface 23a, 23b Conductive structure 23c Conductive material 24 MEMS component 25 Reference Element 26 recess 27a, 27b trench 30 package substrate
圖1a為一示意圖，顯示本發明第一實施例之壓力感測器之俯視結構。 圖1b為一示意圖，顯示本發明第一實施例之壓力感測器沿圖1a所示之AA線之剖面結構。 圖2a為一示意圖，顯示本發明第二實施例之壓力感測器之俯視結構。 圖2b為一示意圖，顯示本發明第二實施例之壓力感測器沿圖2a所示之AA線之剖面結構。 圖3為一示意圖，顯示本發明第三實施例之壓力感測器之剖面結構。 圖4為一示意圖，顯示本發明第四實施例之壓力感測器之剖面結構。 圖5為一示意圖，顯示本發明第五實施例之壓力感測器之俯視結構。 圖6為一示意圖，顯示本發明第六實施例之壓力感測器之俯視結構。 圖7a為一示意圖，顯示本發明第七實施例之壓力感測器之局部俯視結構。 圖7b為一示意圖，顯示本發明第八實施例之壓力感測器之局部俯視結構。 圖7c為一示意圖，顯示本發明第九實施例之壓力感測器之局部俯視結構。 圖8a至圖8i為一示意圖，顯示本發明第一實施例之壓力感測器之製造方法。Fig. 1a is a schematic view showing the top view of the pressure sensor of the first embodiment of the present invention. Fig. 1b is a schematic view showing the cross-sectional structure of the pressure sensor of the first embodiment of the present invention taken along line AA shown in Fig. 1a. Fig. 2a is a schematic view showing the top view of the pressure sensor of the second embodiment of the present invention. Fig. 2b is a schematic view showing the cross-sectional structure of the pressure sensor of the second embodiment of the present invention taken along line AA shown in Fig. 2a. Fig. 3 is a schematic view showing the sectional structure of a pressure sensor according to a third embodiment of the present invention. Figure 4 is a schematic view showing the cross-sectional structure of a pressure sensor according to a fourth embodiment of the present invention. Fig. 5 is a schematic view showing the top view of a pressure sensor according to a fifth embodiment of the present invention. Figure 6 is a schematic view showing the top view of a pressure sensor of a sixth embodiment of the present invention. Fig. 7a is a schematic view showing a partial plan view of a pressure sensor of a seventh embodiment of the present invention. Fig. 7b is a schematic view showing a partial plan view of the pressure sensor of the eighth embodiment of the present invention. Figure 7c is a schematic view showing a partial top view of the pressure sensor of the ninth embodiment of the present invention. 8a to 8i are schematic views showing a method of manufacturing a pressure sensor according to a first embodiment of the present invention.
Claims (24)
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| TW200902429A (en) * | 2006-12-29 | 2009-01-16 | Gen Electric | Pressure transducer diaphragm and method of making same |
| US20100263452A1 (en) * | 2005-08-23 | 2010-10-21 | Continetal Teves Ag & Co. Ohg | Pressure Sensor for Hydraulic Media in Motor Vehicle Brake Systems |
| CN102156012A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | Micro electromechanical system (MEMS) pressure sensor and manufacturing method thereof |
| CN204881959U (en) * | 2015-06-29 | 2015-12-16 | 歌尔声学股份有限公司 | MEMS pressure sensing component |
| CN105651431A (en) * | 2014-11-28 | 2016-06-08 | 精工爱普生株式会社 | Electronic device, physical quantity sensor, pressure sensor, vibrator and altimeter |
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|---|---|---|---|---|
| US20100263452A1 (en) * | 2005-08-23 | 2010-10-21 | Continetal Teves Ag & Co. Ohg | Pressure Sensor for Hydraulic Media in Motor Vehicle Brake Systems |
| TW200902429A (en) * | 2006-12-29 | 2009-01-16 | Gen Electric | Pressure transducer diaphragm and method of making same |
| CN102156012A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | Micro electromechanical system (MEMS) pressure sensor and manufacturing method thereof |
| CN105651431A (en) * | 2014-11-28 | 2016-06-08 | 精工爱普生株式会社 | Electronic device, physical quantity sensor, pressure sensor, vibrator and altimeter |
| CN204881959U (en) * | 2015-06-29 | 2015-12-16 | 歌尔声学股份有限公司 | MEMS pressure sensing component |
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