TWI619195B - Tray device and plasma processing equipment - Google Patents
Tray device and plasma processing equipment Download PDFInfo
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- TWI619195B TWI619195B TW102147916A TW102147916A TWI619195B TW I619195 B TWI619195 B TW I619195B TW 102147916 A TW102147916 A TW 102147916A TW 102147916 A TW102147916 A TW 102147916A TW I619195 B TWI619195 B TW I619195B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Abstract
本發明提供的托盤裝置及等離子體加工設備，其在托盤裝置的上表面設置有複數個裝片位，並且對應於每個裝片位而在托盤裝置中設置有熱交換氣體進氣通道，用以將熱交換氣體引導至裝片位的上表面。其中該熱交換氣體進氣通道包括：邊緣進氣通道和中間進氣通道，邊緣進氣通道和中間進氣通道的進氣口均與外部的氣源相連通，且邊緣進氣通道的出氣口設置在裝片位之上表面的邊緣區域內，中間進氣通道的出氣口設置在裝片位之上表面的中間區域。本發明提供的托盤裝置及等離子體加工設備，可以改善被加工元件之邊緣區域的熱交換效果，從而使被加工元件的邊緣區域與中間區域的溫度趨於均勻，進而提高等離子體加工技術的均勻性。 The tray device and the plasma processing equipment provided by the present invention are provided with a plurality of film loading positions on the upper surface of the tray device, and a heat exchange gas inlet channel is provided in the tray device corresponding to each film loading position. To direct the heat exchange gas to the upper surface of the loading position. The heat exchange gas inlet channel includes: an edge inlet channel and an intermediate inlet channel, and the inlets of the edge inlet channel and the intermediate inlet channel are in communication with an external air source, and the outlet of the edge inlet channel It is arranged in the edge area of the upper surface of the loading position, and the air outlet of the intermediate air inlet channel is arranged in the middle area of the upper surface of the loading position. The tray device and the plasma processing equipment provided by the present invention can improve the heat exchange effect of the edge region of the processed element, so that the temperature of the edge region and the intermediate region of the processed element tends to be uniform, thereby improving the uniformity of the plasma processing technology. Sex.
Description
本發明係有關於一種微電子加工技術領域，尤指一種托盤裝置及等離子體加工設備。 The invention relates to the technical field of microelectronics processing, in particular to a tray device and plasma processing equipment.
等離子體加工設備是加工半導體元件的常用設備，其在進行諸如蝕刻、濺鍍和化學氣相沉積等加工過程中，為了提高等離子體加工設備的生產效率，降低生產成本，一般採用尺寸較大的像是托盤之托盤裝置來承載複數個被加工元件，並將其同時運送至反應腔室中，從而對複數個被加工元件同時進行加工。 Plasma processing equipment is a common equipment for processing semiconductor components. In order to improve the production efficiency of plasma processing equipment and reduce production costs during processing such as etching, sputtering, and chemical vapor deposition, generally larger sizes are used. A tray device, such as a tray, carries a plurality of processed elements and simultaneously transports them to a reaction chamber, thereby processing the plurality of processed elements at the same time.
圖1為現有的等離子體加工設備的結構示意圖。如圖1所示，等離子體加工設備包括反應腔室1和托盤3。其中，在反應腔室1內設置有基座5，並且在該基座5上固定有靜電卡盤4，托盤3的上表面設置有複數個裝片位21。靜電卡盤4用於採用靜電引力的方式將承載有複數個被加工元件2的托盤3吸附在靜電卡盤4的上表面，同時，將複數個被加工元件2吸附在托盤3的複數個裝片位21上。而且，在實際加工過程中，在反應腔室1中形成的等離子體容易使被加工元件2的溫度超出加工所需的溫度，因此需要對被加工元件2的溫度進行控制。傳統的溫度控制方式是在被加工元件2的背面(即，被加工元件2的下表面)吹送熱交換氣體，如氦氣或氬氣，以借助熱交換氣體對被加工元件2的溫度進行調節。 FIG. 1 is a schematic structural diagram of a conventional plasma processing equipment. As shown in FIG. 1, the plasma processing apparatus includes a reaction chamber 1 and a tray 3. A base 5 is provided in the reaction chamber 1, and an electrostatic chuck 4 is fixed on the base 5. A plurality of loading positions 21 are provided on the upper surface of the tray 3. The electrostatic chuck 4 is used to attract the pallet 3 carrying the plurality of processed elements 2 on the upper surface of the electrostatic chuck 4 by using electrostatic attraction, and at the same time, the plurality of processed elements 2 are adsorbed on the tray 3 Position 21. Moreover, in the actual processing process, the plasma formed in the reaction chamber 1 easily causes the temperature of the processing element 2 to exceed the temperature required for processing, so the temperature of the processing element 2 needs to be controlled. The conventional temperature control method is to blow a heat exchange gas, such as helium or argon, on the back surface of the processing element 2 (that is, the lower surface of the processing element 2) to adjust the temperature of the processing element 2 by means of the heat exchange gas. .
請參閱圖2所示，其為圖1中之托盤的俯視圖。具體而言，對應於托盤3的每個裝片位21均設置有一中間進氣通道，該中間進氣通道包括一中央進氣孔31和複數個中間進氣孔32。其中，中央進氣孔31設置在裝片位21的中心；複數個中間進氣孔32均勻地排列在以裝片位21的中心為圓心、以裝片位21之半徑的二分之一為半徑的圓周上。請再次參閱圖1，在靜電卡盤4內設置有氣體通道6，該氣體通道6的出氣端位於靜電卡盤4的上表面，且與托盤3中的每一個中間進氣通道相連通；氣體通道6的進氣端與用於提供熱交換氣體的氣源(圖中未示)連接。在調節被加工元件2的溫度過程中，熱交換氣體經由氣體通道6和托盤3中的中間進氣通道進入裝片位21與相對應的被加工元件2之下表面間的縫隙中，從而實現熱交換氣體與被加工元件2之間的熱交換。 Please refer to FIG. 2, which is a top view of the tray in FIG. 1. Specifically, each loading position 21 corresponding to the tray 3 is provided with an intermediate air intake passage. The intermediate air intake passage includes a central air intake hole 31 and a plurality of intermediate air intake holes 32. Among them, the central air inlet hole 31 is provided at the center of the loading position 21; a plurality of intermediate air holes 32 are evenly arranged at the center of the loading position 21 as a circle center, and a half of the radius of the loading position 21 is Radius on the circumference. Referring again to FIG. 1, a gas passage 6 is provided in the electrostatic chuck 4, and the gas outlet end of the gas passage 6 is located on the upper surface of the electrostatic chuck 4 and communicates with each of the intermediate intake passages in the tray 3; The air inlet end of the channel 6 is connected to an air source (not shown) for providing a heat exchange gas. In the process of adjusting the temperature of the processed element 2, the heat exchange gas enters the gap between the loading position 21 and the corresponding lower surface of the processed element 2 through the gas channel 6 and the intermediate air inlet channel in the tray 3, thereby achieving Heat exchange between the heat exchange gas and the element 2 to be processed.
上述等離子體加工設備在實際應用中不可避免地存在以下問題：由於中間進氣孔32位於以裝片位21的中心為圓心、以裝片位21之半徑的二分之一為半徑的圓周上，熱交換氣體經由中間進氣孔32向四周擴散的擴散半徑往往達不到裝片位21之半徑的二分之一，這樣，來自中間進氣孔32的熱交換氣體通常無法到達被加工元件2的邊緣區域(例如，自裝片位21的邊緣向其中心延伸3~5mm的區域)，導致熱交換氣體與被加工元件2的邊緣區域之間的熱交換效果較差，造成被加工元件2之邊緣區域的溫度與中間區域的溫度產生差異，使得被加工元件2的溫度均勻性較差，因此降低了等離子體加工設備的加工均勻性。 The above-mentioned plasma processing equipment inevitably has the following problems in practical applications: since the intermediate air inlet hole 32 is located on a circle centered on the center of the loading position 21 and having a radius of one-half of the radius of the loading position 21 The diffusion radius of the heat exchange gas diffused to the surroundings through the intermediate air inlet hole 32 often does not reach one half of the radius of the loading position 21. In this way, the heat exchange gas from the intermediate air inlet hole 32 usually cannot reach the processed component. The edge area of 2 (for example, the area where the edge of the self-loading tablet 21 extends 3 to 5 mm toward its center) results in a poor heat exchange effect between the heat exchange gas and the edge area of the processed element 2 and causes the processed element 2 The difference between the temperature of the edge region and the temperature of the middle region makes the temperature uniformity of the processed element 2 poor, and therefore reduces the processing uniformity of the plasma processing equipment.
有鑑於現有技術的不足，本發明提供一種托盤裝置及等離子體加工設備，其可以改善被加工元件之邊緣區域的熱交換效果，從而使被加工元件的邊緣區域與中間區域的溫度趨於均勻，進而提高等離子體加工設備的加工均勻性。 In view of the shortcomings of the prior art, the present invention provides a tray device and plasma processing equipment, which can improve the heat exchange effect of the edge region of the processed element, so that the temperature of the edge region and the intermediate region of the processed element tends to be uniform. This further improves the processing uniformity of the plasma processing equipment.
為達到上述目的，本發明提供一種托盤裝置，用於承載被加工元件，並借助熱交換氣體對被加工元件的溫度進行調節，在所述托盤裝置的上表面設置有複數個裝片位，並且對應於每個所述裝片位而在所述托盤裝置中設置有熱交換氣體進氣通道，用以將所述熱交換氣體引導至所述裝片位的上表面。其中，所述熱交換氣體進氣通道包括：邊緣進氣通道和中間進氣通道，所述邊緣進氣通道和中間進氣通道的進氣口均與外部的氣源相連通；並且，所述邊緣進氣通道的出氣口設置在所述裝片位之上表面的邊緣區域內；所述中間進氣通道的出氣口設置所述裝片位之上表面的中間區域；其中，所述中心位置、所述中間區域和所述邊緣區域之間彼此不連通。 In order to achieve the above object, the present invention provides a tray device for carrying a component to be processed, and adjusting the temperature of the component to be processed by means of heat exchange gas. A plurality of loading positions are provided on an upper surface of the tray device, and Corresponding to each of the loading positions, a heat exchange gas inlet passage is provided in the tray device to guide the heat exchange gas to an upper surface of the loading position. Wherein, the heat exchange gas intake passage includes an edge intake passage and an intermediate intake passage, and the air inlets of the edge intake passage and the intermediate intake passage are in communication with an external air source; and, The air outlet of the edge air intake channel is set in the edge area of the upper surface of the loading position; the air outlet of the middle air intake channel is set in the middle area of the upper surface of the loading position; wherein, the central position The intermediate region and the edge region are not connected to each other.
其中，對於每一個所述裝片位而言，所述邊緣進氣通道的出氣口和所述中間進氣通道的出氣口被設置成孔狀結構，且各自的數量均為複數個，所述複數個邊緣進氣通道的出氣口和所述複數個中間進氣通道的出氣口各自均沿所述裝片位的周緣均勻地排列成至少1圈。 Wherein, for each of the loading positions, the air outlet of the edge air inlet channel and the air outlet of the middle air inlet channel are arranged in a hole-like structure, and the number of each of them is plural. The air outlets of the plurality of edge air inlet channels and the air outlets of the plurality of middle air inlet channels are each evenly arranged at least one turn along the periphery of the loading position.
其中，對於每一個所述裝片位而言，其邊緣區域和/或中間區域形成有相對於背向所述托盤裝置的上表面而凹進的凹槽，所述邊緣進氣通道的出氣口和所述中間進氣通道的出氣口位於所述凹槽的底面或側面。 Wherein, for each of the loading positions, a groove is formed in an edge region and / or a middle region of the edge position, and an air outlet of the edge air inlet channel is formed. And the air outlet of the intermediate air inlet channel is located on the bottom or side of the groove.
其中，所述凹槽沿所述裝片位的周緣延伸並閉合呈環形。 Wherein, the groove extends along the peripheral edge of the loading position and is closed in a ring shape.
其中，所述邊緣進氣通道之出氣口的總面積小於所述中間進氣通道之出氣口的總面積。 The total area of the air outlets of the edge air intake channel is smaller than the total area of the air outlets of the middle air intake channel.
其中，所述邊緣進氣通道之出氣口的直徑小於所述中間進氣通道之出氣口的直徑。 The diameter of the air outlet of the edge air intake channel is smaller than the diameter of the air outlet of the middle air intake channel.
其中，所述邊緣進氣通道之出氣口的直徑為所述中間進氣通道之出氣口的直徑的三分之一至三分之二。 Wherein, the diameter of the air outlet of the edge air inlet channel is one third to two thirds of the diameter of the air outlet of the middle air inlet channel.
其中，所述中間進氣通道之出氣口的直徑為0.6~1mm。 Wherein, the diameter of the air outlet of the intermediate intake channel is 0.6 ~ 1mm.
其中，所述邊緣進氣通道之出氣口的數量與所述中間進氣通道的出氣口的數量相等。 Wherein, the number of air outlets of the edge air intake channel is equal to the number of air outlets of the middle air intake channel.
其中，在所述裝片位的徑向方向上，處於最外側的所述邊緣進氣通道的出氣口與所述裝片位的邊緣之間的距離為2~5mm。 Wherein, in a radial direction of the loading position, a distance between an air outlet of the edge air intake channel located at an outermost side and an edge of the loading position is 2 to 5 mm.
其中，所述複數個中間進氣通道的出氣口排列成1圈，且其在所述裝片位的徑向方向上的位置處於所述裝片位之半徑的二分之一的位置處。 Wherein, the air outlets of the plurality of intermediate intake passages are arranged in a circle, and the position in the radial direction of the loading position is at a position of a half of the radius of the loading position.
其中，所述熱交換氣體進氣通道還包括中央進氣通道，所述中央進氣通道的進氣口與外部的氣源相連通，所述中央進氣通道的出氣口設置在所述裝片位之上表面的中心位置處。 Wherein, the heat exchange gas inlet passage further includes a central air inlet passage, an air inlet of the central air inlet passage is communicated with an external air source, and an air outlet of the central air inlet passage is provided in the loading plate. The center position of the upper surface of the bit.
此外，本發明還提供一種等離子體加工設備，其包括反應腔室、氣源、位於所述反應腔室內的夾持裝置、以及置於所述夾持裝置上的托盤裝置，所述托盤裝置用於承載被加工元件，並借助所述氣源提供的熱交換氣體對被加工元件的溫度進行調節。所述托盤裝置 採用了上述任意一項所述的托盤裝置，所述托盤裝置中的熱交換氣體進氣通道與所述氣源相連通。 In addition, the present invention also provides a plasma processing apparatus including a reaction chamber, a gas source, a holding device located in the reaction chamber, and a tray device placed on the holding device. It is used for supporting the processed element, and the temperature of the processed element is adjusted by the heat exchange gas provided by the air source. The tray device The tray device according to any one of the above is adopted, and a heat exchange gas inlet passage in the tray device is in communication with the air source.
其中，在所述夾持裝置內設置有相互獨立的第一氣路和第二氣路。所述第一氣路的輸出端延伸至所述夾持裝置的上表面，且單獨與所述中間進氣通道相連通；所述第一氣路的輸入端與所述氣源相連通。所述第二氣路的輸出端延伸至所述夾持裝置的上表面，且單獨與所述邊緣進氣通道相連通；所述第二氣路的輸入端與所述氣源相連通。 Wherein, a first air path and a second air path which are independent of each other are provided in the clamping device. The output end of the first gas path extends to the upper surface of the clamping device, and is in communication with the intermediate intake channel alone; the input end of the first gas path is in communication with the air source. The output end of the second gas path extends to the upper surface of the clamping device, and is in communication with the edge air intake channel alone; the input end of the second gas path is in communication with the air source.
其中，所述氣源包括第一氣源和第二氣源，並且在所述夾持裝置內設置有相互獨立的第一氣路和第二氣路。所述第一氣路的輸出端延伸至所述夾持裝置的上表面，且單獨與所述中間進氣通道相連通；所述第一氣路的輸入端與所述第一氣源相連通。所述第二氣路的輸出端延伸至所述夾持裝置的上表面，且單獨與所述邊緣進氣通道相連通；所述第二氣路的輸入端與所述第二氣源相連通。 Wherein, the air source includes a first air source and a second air source, and a first air path and a second air path that are independent of each other are provided in the clamping device. The output end of the first air path extends to the upper surface of the clamping device, and is in communication with the intermediate air intake channel alone; the input end of the first air path is in communication with the first air source . The output end of the second gas path extends to the upper surface of the clamping device, and is in communication with the edge air intake channel alone; the input end of the second gas path is in communication with the second air source .
其中，在所述夾持裝置內設置有氣路，所述氣路的輸出端延伸至所述夾持裝置的上表面，且分別與所述中間進氣通道和邊緣進氣通道相連通；所述氣路的輸入端與所述氣源相連通，所述氣源經由所述氣路同時向所述中間進氣通道和邊緣進氣通道輸送熱交換氣體。 Wherein, a gas path is provided in the clamping device, and the output end of the gas path extends to the upper surface of the clamping device, and communicates with the intermediate air intake channel and the edge air intake channel, respectively; The input end of the gas path is in communication with the air source, and the air source simultaneously transmits heat exchange gas to the intermediate air intake passage and the edge air intake passage via the air passage.
其中，在所述邊緣進氣通道之出氣口的前端和所述中間進氣通道之出氣口的前端，設置有壓力流量控制器或質量流量控制器。 Wherein, a pressure flow controller or a mass flow controller is provided at the front end of the air outlet of the edge air inlet passage and the front end of the air outlet of the middle air inlet passage.
其中，所述壓力流量控制器用於調節流經所述中間進氣通道的熱交換氣體的氣流量；所述質量流量控制器用於調節流經所述邊緣進氣通道的熱交換氣體的氣流量。 Wherein, the pressure flow controller is used to adjust the air flow of the heat exchange gas flowing through the intermediate intake channel; and the mass flow controller is used to adjust the air flow of the heat exchange gas flowing through the edge intake channel.
本發明具有以下功效：本發明提供的托盤裝置，其通過在每個裝片位的邊緣區域設置邊緣進氣通道的出氣口，使熱交換氣體經由該邊緣進氣通道的出氣口而擴散至裝片位之上表面的邊緣區域，從而改善裝片位的邊緣區域的熱交換效果，進而可以在加工過程中使被加工元件的邊緣區域與中間區域的溫度趨於均勻，從而提高等離子體加工的均勻性。 The present invention has the following effects: The tray device provided by the present invention is provided with an air outlet of an edge air inlet channel in an edge area of each loading position, so that heat exchange gas is diffused to the device through the air outlet of the edge air inlet channel. The edge area of the upper surface of the wafer position, thereby improving the heat exchange effect of the edge area of the wafer loading position, so that the temperature of the edge region and the intermediate region of the processed element can be uniformed during the processing, thereby improving the plasma processing. Uniformity.
較佳的是，邊緣進氣通道之出氣口的總面積小於中間進氣通道之出氣口的總面積，這使得較多的熱交換氣體經由中間進氣通道的出氣口而在面積較大的中間區域內擴散，同時減少流經邊緣進氣通道的出氣口的熱交換氣體的流量，從而減少經由邊緣進氣通道的出氣口擴散到裝片位之外的熱交換氣體，進而避免因熱交換氣體洩漏至反應腔室內的量過大而對加工結果產生不良影響。 Preferably, the total area of the air outlets of the edge air inlet channel is smaller than the total area of the air outlets of the middle air inlet channel, which allows more heat exchange gas to pass through the air outlets of the middle air inlet channel in the middle of the larger area. Diffusion in the area, while reducing the flow of heat exchange gas flowing through the air inlet of the edge air inlet channel, thereby reducing the heat exchange gas that diffuses outside the loading position through the air outlet of the edge air inlet channel, thereby avoiding heat exchange gas The amount leaked into the reaction chamber is too large, which adversely affects the processing result.
本發明提供的等離子體加工設備，其藉由採用本發明提供的上述托盤裝置，提高被加工元件的溫度均勻性，從而提高等離子體加工的均勻性。 The plasma processing equipment provided by the present invention uses the above-mentioned tray device provided by the present invention to improve the temperature uniformity of a processed element, thereby improving the uniformity of plasma processing.
1‧‧‧反應腔室 1‧‧‧ reaction chamber
2‧‧‧被加工元件 2‧‧‧Processed element
21‧‧‧裝片位 21‧‧‧ Loading position
3‧‧‧托盤 3‧‧‧ tray
31‧‧‧中央進氣孔 31‧‧‧ central air inlet
32‧‧‧中間進氣孔 32‧‧‧ middle air inlet
4‧‧‧靜電卡盤 4‧‧‧ electrostatic chuck
5‧‧‧基座 5‧‧‧ base
6‧‧‧氣體通道 6‧‧‧gas channel
20‧‧‧托盤裝置 20‧‧‧Tray device
201‧‧‧裝片位 201‧‧‧ Loading position
21‧‧‧被加工元件 21‧‧‧Processed element
23‧‧‧中央進氣孔 23‧‧‧ central air inlet
231‧‧‧中心區域 231‧‧‧Central area
24‧‧‧中間進氣孔 24‧‧‧ middle air inlet
241‧‧‧中間區域 241‧‧‧Middle area
242‧‧‧出氣口凹槽 242‧‧‧Outlet groove
25‧‧‧邊緣進氣孔 25‧‧‧Edge air inlet
251‧‧‧邊緣區域 251‧‧‧Marginal area
252‧‧‧出氣口凹槽 252‧‧‧Outlet groove
26‧‧‧夾持裝置 26‧‧‧Clamping device
27‧‧‧氣路 27‧‧‧airway
28‧‧‧氣源 28‧‧‧Air source
41‧‧‧第一氣路 41‧‧‧The first gas path
42‧‧‧第二氣路 42‧‧‧Second Gas Path
43‧‧‧壓力流量控制器 43‧‧‧Pressure Flow Controller
44‧‧‧質量流量控制器 44‧‧‧mass flow controller
45‧‧‧第一氣源 45‧‧‧ the first air source
46‧‧‧第二氣源 46‧‧‧Second gas source
100‧‧‧反應腔室 100‧‧‧ reaction chamber
D‧‧‧邊緣進氣孔的中心與裝片位的邊緣之間的距離 D‧‧‧ The distance between the center of the edge air inlet and the edge of the loading position
圖1為現有的等離子體加工設備的結構示意圖。 FIG. 1 is a schematic structural diagram of a conventional plasma processing equipment.
圖2為圖1中之托盤的俯視圖。 FIG. 2 is a top view of the tray in FIG. 1.
圖3為本發明之一實施例提供的托盤裝置剖視圖。 FIG. 3 is a cross-sectional view of a tray device according to an embodiment of the present invention.
圖4為圖3所示的托盤裝置所能採用之第一種形式的裝片位俯視圖。 FIG. 4 is a top view of a loading position of the first form that the tray device shown in FIG. 3 can adopt. FIG.
圖5為圖3所示的托盤裝置所能採用之第二種形式的裝片位俯視圖。 FIG. 5 is a top view of a second form loading position that can be used by the tray device shown in FIG. 3.
圖6為本發明之另一實施例提供的托盤裝置剖視圖。 FIG. 6 is a cross-sectional view of a tray device according to another embodiment of the present invention.
圖7為圖6所示的托盤裝置所能採用之一種形式的裝片位的局部俯視圖。 FIG. 7 is a partial plan view of one form of loading position that the tray device shown in FIG. 6 can adopt.
圖8為本發明第一實施例提供的等離子體加工設備的結構示意圖。 FIG. 8 is a schematic structural diagram of a plasma processing apparatus according to a first embodiment of the present invention.
圖9A為應用於圖8所示之等離子體加工設備的一種夾持裝置的結構示意圖。 FIG. 9A is a schematic structural diagram of a clamping device applied to the plasma processing apparatus shown in FIG. 8.
圖9B為應用於圖8所示之等離子體加工設備的另一種夾持裝置的結構示意圖。 FIG. 9B is a schematic structural diagram of another clamping device applied to the plasma processing apparatus shown in FIG. 8.
圖10為本發明第二實施例提供的等離子體加工設備的結構示意圖。 FIG. 10 is a schematic structural diagram of a plasma processing apparatus according to a second embodiment of the present invention.
圖11為本發明第三實施例提供的等離子體加工設備的結構示意圖。 FIG. 11 is a schematic structural diagram of a plasma processing apparatus according to a third embodiment of the present invention.
以下請配合圖式及本發明之較佳實施例，進一步闡述本發明為達成預定創作目的所採取的技術手段。 In the following, please refer to the drawings and the preferred embodiments of the present invention to further explain the technical means adopted by the present invention to achieve the intended purpose.
本發明提供一種托盤裝置，在其上表面設置有複數個裝片位，並且對應於每個裝片位而在托盤裝置中設置有熱交換氣體進氣通道，以將熱交換氣體引導至裝片位的上表面，其中，熱交換氣體進氣通道包括：邊緣進氣通道和中間進氣通道，邊緣進氣通道和中間進氣通道的進氣口均與外部的氣源相連通，並且邊緣進氣通道的出氣口設置在裝片位的上表面的邊緣區域內，中間進氣通道的出氣口設置在裝片位的上表面的中間區域，以便在加工過程中借助熱交換氣體對其所承載之被加工元件的溫度進行調節。 The present invention provides a tray device provided with a plurality of loading positions on an upper surface thereof, and a heat exchange gas inlet passage is provided in the tray device corresponding to each loading position to guide the heat exchange gas to the loading position. The upper surface of the position, wherein the heat exchange gas intake channel includes: an edge intake channel and an intermediate intake channel, and the intake ports of the edge intake channel and the intermediate intake channel are in communication with an external air source, and the edge intake channel The air outlet of the air channel is set in the edge area of the upper surface of the loading position, and the air outlet of the intermediate air inlet channel is set in the middle area of the upper surface of the loading position, so that it can be carried by the heat exchange gas during processing. The temperature of the component to be processed is adjusted.
請一併參閱圖3和圖4所示，托盤裝置20用於承載被加工元件21，並借助熱交換氣體對被加工元件21的溫度進行調節。托盤裝置20包括複數個裝片位201，加工過程中，被加工元件21各自對應地置於裝片位201上，並且，在本實施例中，每個裝片位201設置成凹槽的形狀，被加工元件21置於該凹槽中，藉由該等凹槽，可以限定被加工元件21在托盤裝置20上的位置，從而避免被加工元件21相對於托盤裝置20發生偏移。但在實際應用中，裝片位201並不侷限於設置成凹槽的形狀，其也可以設置成凸台的形狀，被加工元件21由該凸台承載，以便於限定該被加工元件21在托盤裝置20上的位置，如有需要，裝片位201設置成凹槽的形狀，更有利於限定被加工元件21的位置。 Please refer to FIG. 3 and FIG. 4 together. The tray device 20 is used to carry the processing element 21 and adjust the temperature of the processing element 21 by means of heat exchange gas. The tray device 20 includes a plurality of loading positions 201. During processing, the processed elements 21 are respectively placed on the loading positions 201, and in this embodiment, each loading position 201 is provided in the shape of a groove. The processed element 21 is placed in the groove. With the grooves, the position of the processed element 21 on the tray device 20 can be limited, so that the processed element 21 is prevented from being offset relative to the tray device 20. However, in practical applications, the loading position 201 is not limited to the shape of a groove, and it can also be set to the shape of a boss, and the processed element 21 is carried by the boss, so as to limit the processing element 21 to For the position on the tray device 20, if necessary, the loading position 201 is set in the shape of a groove, which is more conducive to limiting the position of the processed element 21.
而且，對應於每個裝片位201而在托盤裝置20中設置有熱交換氣體進氣通道，諸如氦氣或氬氣等的熱交換氣體經由該進氣通道流入每個裝片位201的上表面和與之對應的被加工元件21的下表面之間的縫隙中，從而可以實現熱交換氣體與被加工元件21之間的熱交換，以此調節被加工元件21的溫度。具體而言，熱交換氣體進氣通道包括中央進氣通道、中間進氣通道和邊緣進氣通道，中央進氣通道、邊緣進氣通道和中間進氣通道的進氣口均與外部的熱交換氣體氣源相連通，中央進氣通道的出氣口設置在裝片位201之上表面的中心位置處；邊緣進氣通道的出氣口設置在裝片位201之上表面的靠近邊緣的區域內(以下簡稱為裝片位之上表面的邊緣區域)；中間進氣通道的出氣口設置在裝片位201的上表面介於中心位置和邊緣區域之間的中間區域(以下簡稱為裝片位之上表面的中間區域)。 Further, a heat exchange gas inlet passage is provided in the tray device 20 corresponding to each loading position 201, and a heat exchange gas such as helium or argon flows into the upper portion of each loading position 201 via the intake passage. In the gap between the surface and the lower surface of the processing element 21 corresponding thereto, heat exchange between the heat exchange gas and the processing element 21 can be realized, and the temperature of the processing element 21 can be adjusted. Specifically, the heat-exchange gas intake passage includes a central intake passage, an intermediate intake passage, and an edge intake passage, and the air inlets of the central intake passage, the edge intake passage, and the intermediate intake passage all exchange heat with the outside. The gas source is connected, and the air outlet of the central air inlet channel is set at the center of the upper surface of the loading position 201; the air outlet of the edge air inlet channel is set in the area near the edge of the upper surface of the loading position 201 ( Hereinafter referred to as the edge area of the upper surface of the loading position); the air outlet of the intermediate air inlet channel is set in the middle area between the upper surface of the loading position 201 and the center position (hereinafter referred to as the loading position of the loading position) Middle area of the top surface).
中央進氣通道的出氣口和中間進氣通道的出氣口均設置成孔狀結構，分別如圖3和圖4中的中央進氣孔23和中間進氣孔24所示。其中，中央進氣孔23的數量為一個，且其中心與裝片位201的中心重合，熱交換氣體經由中央進氣孔23而在裝片位201的中心區域231內擴散，所謂中心區域231，是指熱交換氣體經由中央進氣孔23向四周擴散所能達到的區域。中間進氣孔24的數量為複數個，複數個中間進氣孔24沿裝片位201的周緣均勻排列成1圈，相鄰的中間進氣孔24間隔固定距離，且各中間進氣孔24的直徑可以為0.6~1mm。熱交換氣體經由中間進氣孔24而在中間區域241內擴散。在本實施例中，裝片位201的直徑為2寸，以對應於直徑為2寸的被加工元件21，中間進氣孔24的數量可以為6~10個，這些中間進氣孔24沿裝片位201的周緣排列成1圈，且各中間進氣孔24的中心與裝片位201的中心之間的距離約為裝片位201之半徑的二分之一，即各中間進氣孔24的中心排列在以裝片位201的中心為圓心、以裝片位201之半徑的二分之一為半徑的圓周上(約30mm)。 The air inlet of the central air inlet channel and the air outlet of the middle air inlet channel are both arranged in a hole-like structure, as shown in the central air inlet 23 and the middle air inlet 24 in FIGS. 3 and 4 respectively. Among them, the number of the central air inlet holes 23 is one, and the center thereof coincides with the center of the loading position 201, and the heat exchange gas diffuses through the central air inlet 23 in the central region 231 of the loading position 201. The so-called central region 231 , Refers to the area that the heat exchange gas can reach to the surroundings through the central air inlet 23. The number of the intermediate air intake holes 24 is plural, and the plurality of intermediate air intake holes 24 are evenly arranged in a circle along the periphery of the loading position 201. Adjacent intermediate air intake holes 24 are spaced at a fixed distance, and each of the intermediate air intake holes 24 The diameter can be 0.6 ~ 1mm. The heat exchange gas is diffused in the intermediate region 241 through the intermediate air inlet hole 24. In this embodiment, the diameter of the loading position 201 is 2 inches, so that the number of the intermediate air inlet holes 24 may be 6 to 10 corresponding to the processed element 21 having a diameter of 2 inches. The periphery of the loading position 201 is arranged in a circle, and the distance between the center of each intermediate air inlet hole 24 and the center of the loading position 201 is about one-half of the radius of the loading position 201, that is, each intermediate air intake. The centers of the holes 24 are arranged on a circumference (about 30 mm) with the center of the loading position 201 as the center and the radius of one half of the radius of the loading position 201.
此外，中央進氣孔23的直徑可以與中間進氣孔24的直徑相同也可以不同，而且，若來自中間進氣孔24的熱交換氣體能夠擴散到中心區域231，則可以省***進氣孔23。 In addition, the diameter of the central air intake hole 23 may be the same as or different from the diameter of the central air intake hole 24. Moreover, if the heat exchange gas from the central air intake hole 24 can diffuse to the central region 231, the central air intake can be omitted Hole 23.
邊緣進氣通道設置在裝片位201之上表面的邊緣區域，使熱交換氣體經由該邊緣進氣通道而擴散至該邊緣區域，從而在加工過程中改善被加工元件21在裝片位201之邊緣區域的熱交換效果，使被加工元件21的邊緣區域與其中間區域的溫度趨於均勻，進而提高等離子體加工的均勻性。 The edge air inlet channel is arranged in the edge area on the upper surface of the loading position 201, so that the heat exchange gas is diffused to the edge area through the edge air inlet channel, thereby improving the processed component 21 in the loading position 201 during the processing. The heat exchange effect in the edge region makes the temperature of the edge region of the processed element 21 and its intermediate region tend to be uniform, thereby improving the uniformity of the plasma processing.
本實施例中，邊緣進氣通道的出氣口被設置成孔狀結構，如圖3和圖4中的邊緣進氣孔25所示。邊緣進氣孔25的數量為複數個，這些邊緣進氣孔25沿裝片位201的周緣均勻排列成1圈，且相鄰的邊緣進氣孔25間隔固定距離。在裝片位201的徑向方向上，邊緣進氣通道的出氣口與裝片位201的邊緣之間的距離D為2~5mm，即每個邊緣進氣孔25的中心與裝片位201的邊緣之間的距離D為2~5mm。熱交換氣體經由邊緣進氣孔25而在邊緣區域251內擴散。並且，當被加工元件21的直徑為2寸時，複數個邊緣進氣孔25所在圓周的半徑可以為40~48mm，邊緣進氣孔25的數量可以為12~16個。 In this embodiment, the air outlet of the edge air inlet channel is configured as a hole structure, as shown in the edge air inlet hole 25 in FIGS. 3 and 4. The number of edge air inlet holes 25 is plural, and these edge air inlet holes 25 are evenly arranged in a circle along the peripheral edge of the mounting position 201, and adjacent edge air inlet holes 25 are spaced a fixed distance apart. In the radial direction of the loading position 201, the distance D between the air outlet of the edge air inlet channel and the edge of the loading position 201 is 2 to 5 mm, that is, the center of each edge air inlet hole 25 and the loading position 201 The distance D between the edges is 2 ~ 5mm. The heat exchange gas diffuses in the edge region 251 through the edge air inlet 25. In addition, when the diameter of the processed element 21 is 2 inches, the radius of the circumference of the plurality of edge air inlet holes 25 may be 40 to 48 mm, and the number of edge air inlet holes 25 may be 12 to 16.
較佳的是，邊緣進氣通道之出氣口的總面積小於中間進氣通道之出氣口的總面積，使較多的熱交換氣體經由中間進氣通道的出氣口而在面積較大的中間區域內擴散，並減少流經邊緣進氣通道之出氣口的熱交換氣體的流量，從而減少經由邊緣進氣通道之出氣口擴散到裝片位201之外的熱交換氣體，進而避免因熱交換氣體洩漏至反應腔室內的量過大而對加工結果產生不良影響。例如，當邊緣進氣孔25和中間進氣孔24的數量相等時，可以使前者的直徑小於後者的直徑，從而減小流經邊緣進氣孔25的熱交換氣體的流量，進而將洩漏到裝片位201之外的熱交換氣體的洩漏量控制在合理的範圍內。更佳的是，使邊緣進氣孔25的直徑為中間進氣孔24的直徑的三分之一至三分之二；最佳的是，使中間進氣孔24的直徑為0.6~1mm。 Preferably, the total area of the air outlets of the edge air inlet channel is smaller than the total area of the air outlets of the middle air inlet channel, so that more heat exchange gas passes through the air outlets of the middle air inlet channel to a larger area in the middle area. Internal diffusion, and reduce the flow of heat exchange gas flowing through the air inlet of the edge air inlet channel, thereby reducing the heat exchange gas diffused outside the mounting position 201 through the air outlet of the edge air inlet channel, thereby avoiding heat exchange gas The amount leaked into the reaction chamber is too large, which adversely affects the processing result. For example, when the number of the edge air inlet holes 25 and the middle air inlet holes 24 are equal, the diameter of the former can be made smaller than the diameter of the latter, thereby reducing the flow rate of the heat exchange gas flowing through the edge air inlet holes 25 and leaking to The leakage amount of the heat exchange gas outside the loading position 201 is controlled within a reasonable range. More preferably, the diameter of the edge air inlet hole 25 is one-third to two-thirds of the diameter of the middle air hole 24; and most preferably, the diameter of the middle air hole 24 is 0.6 to 1 mm.
請參閱圖5所示，本實施例中，裝片位201所要承載的被加工元件21的直徑為4寸，裝片位201上的中間進氣孔24的數量多於圖4所示實施例，複數個中間進氣孔24可以排列在以裝片位201的中心為 圓心但半徑不同的2個圓周上，並且排列在同一圓周上的中間進氣孔24的數量、以及2個圓周之間的距離可以根據中間進氣孔24的直徑以及熱交換氣體經由中間進氣孔24向四周擴散的擴散半徑而設定。 Please refer to FIG. 5. In this embodiment, the diameter of the processed element 21 to be carried by the loading position 201 is 4 inches, and the number of the intermediate air holes 24 on the loading position 201 is greater than that of the embodiment shown in FIG. 4. , A plurality of intermediate air inlet holes 24 may be arranged at the center of the loading position 201 as The number of the center air inlet holes 24 on the two circles with different centers and different radii, and the distance between the two circumferences can be passed through the middle air inlet according to the diameter of the center air inlet holes 24 and the heat exchange gas. The diffusion radius of the hole 24 is set.
隨著被加工元件21尺寸的增加，例如其直徑為4寸、6寸及以上，裝片位201上的中間進氣孔24的數量可以增多，並且這些中間進氣孔24還可以沿裝片位201的周緣排列成2圈或更多圈，且處於不同之圈中的中間進氣孔24的中心與裝片位201的中心之間的距離不同，以便能夠更快更均勻地使熱交換氣體擴散到裝片位201上表面的各個位置。相同地，隨著被加工元件21尺寸的增加，邊緣進氣孔25的數量也可以相對應地增加，並且也可以沿裝片位201的周緣排列成2圈或更多圈，例如，當被加工元件21的直徑為4寸時，邊緣進氣孔25的數量可以為20~24個。 As the size of the processed element 21 increases, for example, its diameter is 4 inches, 6 inches and above, the number of the intermediate air inlet holes 24 on the mounting position 201 can be increased, and these intermediate air inlet holes 24 can also be mounted along the film. The periphery of the bit 201 is arranged in two or more turns, and the distance between the center of the intermediate air inlet hole 24 and the center of the loading position 201 in different circles is different, so that the heat exchange can be performed more quickly and uniformly. The gas diffuses to various positions on the upper surface of the mounting position 201. Similarly, as the size of the processed element 21 increases, the number of edge air inlet holes 25 can also increase correspondingly, and it can also be arranged in two or more turns along the periphery of the mounting position 201. For example, when the When the diameter of the processing element 21 is 4 inches, the number of edge air inlet holes 25 may be 20 to 24.
儘管本發明上述實施例中之邊緣進氣通道的出氣口和中間進氣通道的出氣口均設置成孔狀結構，且孔狀結構的數量為複數個，該複數個孔狀結構沿裝片位的周緣均勻排列成至少1圈，但是本發明並不侷限於此，在實際應用中也可以這樣設置邊緣進氣通道的出氣口和/或中間進氣通道，即對於每一個裝片位而言，在其邊緣區域和/或中間區域形成有背向相對於該托盤裝置的上表面而凹進的出氣口凹槽，邊緣進氣通道的出氣口和中間進氣通道的出氣口則位於相應的出氣口凹槽的底面，以將熱交換氣體引入出氣口凹槽內，以便與裝片位所承載的被加工元件進行熱交換，如圖6和圖7所示。 Although the air outlets of the edge air inlet channel and the air outlets of the middle air inlet channel in the above embodiment of the present invention are both provided with a hole-like structure, and the number of the hole-like structures is plural, the plurality of hole-like structures are arranged along the loading position. The peripheral edges of the edge are uniformly arranged at least one circle, but the present invention is not limited to this. In practical applications, the outlet of the edge inlet channel and / or the intermediate inlet channel can also be set in this way, that is, for each loading position In the edge region and / or the middle region, an air outlet groove recessed away from the upper surface of the tray device is formed, and the air outlet of the edge air inlet channel and the air outlet of the middle air inlet channel are located at corresponding positions. The bottom surface of the air outlet groove is used to introduce heat exchange gas into the air outlet groove so as to perform heat exchange with the processed component carried by the loading position, as shown in FIGS. 6 and 7.
請一併參閱圖6和圖7所示，本實施例所示之托盤裝置和裝片位的結構和功能類似於前述圖3和圖4所示之實施例，二者的差別 僅在於：本實施例中，對於每一個裝片位而言，在其邊緣區域251形成有相對於背向該托盤裝置的上表面而凹進的邊緣進氣通道的出氣口凹槽252，邊緣進氣通道的出氣孔25位於該邊緣進氣通道的出氣口凹槽252的底部，以將熱交換氣體引入該出氣口凹槽252內；並且，在裝片位201的中間區域241形成有相對於背向該托盤裝置的上表面而凹進的中間進氣通道的出氣口凹槽242，中間進氣通道的出氣孔24位於該中間進氣通道的出氣口凹槽242的底部，以將熱交換氣體引入該出氣口凹槽242內。 Please refer to FIG. 6 and FIG. 7 together. The structure and function of the tray device and the loading position shown in this embodiment are similar to the embodiments shown in FIG. 3 and FIG. It is only that in this embodiment, for each loading position, the edge region 251 is formed with an air outlet groove 252 of an edge air inlet channel recessed with respect to the upper surface of the tray device. The air outlet hole 25 of the air inlet channel is located at the bottom of the air outlet groove 252 of the edge air inlet channel to introduce heat exchange gas into the air outlet groove 252; The air inlet groove 242 of the middle air inlet channel recessed away from the upper surface of the tray device, and the air outlet hole 24 of the middle air inlet channel is located at the bottom of the air outlet groove 242 of the middle air inlet channel. The exchange gas is introduced into the air outlet groove 242.
如上所述，進入到邊緣進氣通道的出氣口凹槽252和中間進氣通道的出氣口凹槽242內的熱交換氣體可以在沿著裝片位201的周緣而流動，從而使熱交換氣體在出氣口凹槽242和252內更均勻地分佈，進而在加工過程中使被加工元件21上之對應於該出氣口凹槽242和252的區域的溫度趨於均勻，從而進一步提高等離子體加工的均勻性。而且，由於熱交換氣體能夠在該出氣口凹槽242和252內流動並均勻分佈，因此，在托盤裝置內部的邊緣進氣通道的出氣孔25/中間進氣通道的出氣孔24的數量可以不受限制，例如，可以僅設置1個邊緣進氣通道的出氣孔25/中間進氣通道的出氣孔24，就可以使熱交換氣體在出氣口凹槽242/出氣口凹槽252內均勻分佈，而且當邊緣進氣通道的出氣孔25/中間進氣通道的出氣孔24的數量較少時，可以使托盤裝置的內部結構更為簡單。 As described above, the heat exchange gas entering the air outlet groove 252 of the edge air inlet channel and the air outlet groove 242 of the middle air inlet channel can flow along the periphery of the loading position 201, so that the heat exchange gas The air outlet grooves 242 and 252 are more evenly distributed, and the temperature of the area on the processed element 21 corresponding to the air outlet grooves 242 and 252 tends to be uniform during the processing, thereby further improving the plasma processing. Uniformity. In addition, since the heat exchange gas can flow and be uniformly distributed in the air outlet grooves 242 and 252, the number of air outlet holes 25 in the edge air inlet passage / the air outlet holes 24 in the middle air inlet passage in the tray device can be different. Limited, for example, only one outlet hole 25 of the edge inlet channel / outlet hole 24 of the middle inlet channel can be provided, so that the heat exchange gas can be evenly distributed in the outlet groove 242 / outlet groove 252. In addition, when the number of the air outlet holes 25 of the edge air inlet channel / the air outlet holes 24 of the middle air inlet channel are small, the internal structure of the tray device can be made simpler.
儘管本實施例中的出氣口凹槽設置成沿裝片位的周緣延伸並閉合呈環形；但是在實際應用中，出氣口凹槽也可以設置成其他形狀，並且不必沿裝片位的周緣延伸，也不必閉合呈環形，同樣可以 使熱交換氣體經由位於其底面的出氣孔而進入到該出氣口凹槽內並在其中均勻分佈，並同樣可以優化熱交換氣體的均勻性。並且，出氣孔24/25在出氣口凹槽242/252中的設置位置也可以為出氣口凹槽242/252的側壁。 Although the air outlet groove in this embodiment is set to extend along the periphery of the loading position and closed in a ring shape; in practical applications, the air outlet groove can also be set to other shapes and does not need to extend along the periphery of the loading position. , It does n’t have to be closed in a ring, it can also be The heat exchange gas is made to enter the groove of the air outlet through the air outlet hole located on the bottom surface thereof and is evenly distributed therein, and the uniformity of the heat exchange gas can also be optimized. In addition, the position of the air outlet holes 24/25 in the air outlet grooves 242/252 may also be a side wall of the air outlet grooves 242/252.
此外，邊緣進氣通道的出氣口凹槽和中間進氣通道的出氣口凹槽在裝片位徑向上的排列規則和位置關係、以及邊緣進氣通道的出氣口和中間進氣通道的出氣口的設置規則，均類似於前述圖3至圖5所示實例的描述，於此不再贅述。此外，還本發明中所述的裝片位的上表面，包括裝片位上用於承載被加工元件的表面，也包括邊緣進氣通道的出氣口凹槽的底面或側面、以及中間進氣通道的出氣口凹槽內的底面或側面。 In addition, the arrangement rules and positional relationship of the air inlet grooves of the edge air inlet channel and the air outlet grooves of the middle air inlet channel in the radial direction of the loading position, and the air outlets of the edge air inlet channel and the air outlet of the middle air inlet channel The setting rules are similar to the description of the examples shown in FIG. 3 to FIG. 5, and are not repeated here. In addition, the upper surface of the loading position described in the present invention includes the surface on the loading position for carrying the processed component, and also includes the bottom surface or side surface of the air outlet groove of the edge air inlet channel, and the intermediate air inlet. The bottom or side of the channel's air outlet groove.
此外，本發明還提供一種等離子體加工設備。請參閱圖8所示，其為本發明第一實施例提供的等離子體加工設備的結構示意圖，其中的托盤裝置為托盤。該等離子體加工設備包括反應腔室100、氣源28、位於反應腔室100內的夾持裝置26、以及置於該夾持裝置26上的托盤20。其中，托盤20用於承載被加工元件21，並藉由氣源28提供的熱交換氣體對被加工元件21的溫度進行調節，而且，托盤20通過採用本發明前述實施例提供的托盤裝置的結構形式，可以在加工過程中提高被加工元件21的溫度均勻性，從而提高加工結果的均勻性。 In addition, the present invention also provides a plasma processing apparatus. Please refer to FIG. 8, which is a schematic structural diagram of a plasma processing apparatus according to a first embodiment of the present invention, where a tray device is a tray. The plasma processing equipment includes a reaction chamber 100, an air source 28, a holding device 26 located in the reaction chamber 100, and a tray 20 placed on the holding device 26. Wherein, the tray 20 is used to carry the processed element 21, and the temperature of the processed element 21 is adjusted by the heat exchange gas provided by the air source 28. In addition, the tray 20 adopts the structure of the tray device provided by the foregoing embodiment of the present invention. In the form, the temperature uniformity of the processed element 21 can be improved during the processing, thereby improving the uniformity of the processing results.
在本實施例中，在夾持裝置26內設置有相互獨立的第一氣路41和第二氣路42(由於圖8為剖視圖，使得實際互不連通的第一氣路41和第二氣路42的投影出現了交叉的情形)，其中，第一氣路41的輸出端延伸至夾持裝置26的上表面，且單獨與托盤20的中間進氣通 道相連通；第一氣路41的輸入端與氣源28相連通；第二氣路42的輸出端延伸至夾持裝置26的上表面，且單獨與托盤20的邊緣進氣通道相連通；第二氣路42的輸入端與氣源28相連通；氣源28經由第一氣路41和第二氣路42同時向托盤20的中間進氣通道和邊緣進氣通道輸送熱交換氣體。 In this embodiment, a first gas path 41 and a second gas path 42 that are independent of each other are provided in the clamping device 26 (because FIG. 8 is a cross-sectional view, the first gas path 41 and the second gas path that are actually disconnected from each other The projection of the road 42 appears to be crossed), in which the output end of the first air passage 41 extends to the upper surface of the clamping device 26 and is separately communicated with the middle air intake of the tray 20 The input end of the first air path 41 is in communication with the air source 28; the output end of the second air path 42 extends to the upper surface of the clamping device 26, and is in communication with the edge air inlet channel of the tray 20 alone; The input end of the second gas path 42 is in communication with the air source 28; the air source 28 simultaneously transmits heat exchange gas to the middle air intake channel and the edge air intake channel of the tray 20 via the first air path 41 and the second air path 42.
在本實施例中，等離子體加工設備還包括壓力流量控制器43和質量流量控制器44。其中，壓力流量控制器43用於調節流經托盤20的中間進氣通道的熱交換氣體的流量，以保證裝片位201的上表面和與之相對應的被加工元件21的下表面之間的氣壓固定在預定氣壓值不變，該預定氣壓值為當熱交換氣體的洩漏量(即，處於裝片位201和與之相對應的被加工元件21的下表面之間的縫隙中的熱交換氣體洩漏至反應腔室100中的洩漏量)不超出其安全值時，允許裝片位201和與之相對應的被加工元件21的下表面之間的氣壓達到的最大值。所謂安全值，是指在保證加工結果不受影響的前提下，允許熱交換氣體洩漏至反應腔室100內的最大洩漏量。例如，通過壓力流量控制器43控制托盤20的中間進氣通道的氦流量，使得裝片位201和與之相對應的被加工元件21的下表面之間的氣壓滿足8托爾氦氣壓力條件下，氦氣洩露量小於8sccm的要求。 In this embodiment, the plasma processing apparatus further includes a pressure flow controller 43 and a mass flow controller 44. Among them, the pressure flow controller 43 is used to adjust the flow of the heat exchange gas flowing through the middle intake passage of the tray 20 to ensure that between the upper surface of the loading position 201 and the corresponding lower surface of the processed element 21 The air pressure is fixed at a predetermined air pressure value, and the predetermined air pressure value is the amount of leakage of the heat exchange gas (that is, the heat in the gap between the mounting position 201 and the lower surface of the processed element 21 corresponding thereto). When the amount of leakage of the exchange gas into the reaction chamber 100 does not exceed its safe value, the maximum value of the air pressure between the loading position 201 and the lower surface of the processing element 21 corresponding thereto is allowed. The so-called safety value refers to the maximum leakage amount that allows the heat exchange gas to leak into the reaction chamber 100 on the premise that the processing results are not affected. For example, the pressure flow controller 43 controls the helium flow in the middle intake channel of the tray 20 so that the air pressure between the loading position 201 and the lower surface of the processing element 21 corresponding thereto satisfies the 8 Torr helium pressure condition. Under the requirements of helium leakage less than 8sccm.
質量流量控制器44用於調節流經托盤20的邊緣進氣通道的熱交換氣體的流量，可以使得被加工元件21的邊緣持續充滿諸如氦氣的熱交換氣體，以保證自托盤20的邊緣進氣通道進入裝片位201和與之相對應的被加工元件21的下表面之間的縫隙中的熱交換氣體，在其洩漏量不會超出安全值的前提下，能夠與被加工元件21的邊緣區 域進行熱交換，從而改善被加工元件21的邊緣區域的熱交換效果，進而有效控制被加工元件21邊緣的溫度。 The mass flow controller 44 is used to adjust the flow of the heat exchange gas flowing through the edge air inlet channel of the tray 20, so that the edge of the processed element 21 is continuously filled with heat exchange gas such as helium to ensure that The heat exchange gas that enters the gap between the mounting position 201 and the corresponding lower surface of the processed element 21 can be exchanged with the processed element 21 on the premise that its leakage does not exceed the safe value. Marginal zone The region performs heat exchange, thereby improving the heat exchange effect of the edge region of the processed element 21, and then effectively controlling the temperature of the edge of the processed element 21.
在本實施例中，在夾持裝置26與托盤20之間以及托盤20與被加工元件21之間均採用靜電引力的方式固定在一起。具體而言，請參閱圖9A所示，夾持裝置26包括靜電卡盤和直流電源，其中，靜電卡盤包括卡盤本體，該卡盤本體採用導電材料製作，並在導電材料的表面包覆絕緣材料，導電材料作為卡盤本體的電極，並將其接地；托盤20採用導電材料製作，並在導電材料的表面包覆絕緣材料，以保證托盤20不被反應腔室100內的等離子體蝕刻；導電材料作為托盤電極，且與直流電源電連接，在接通直流電源後，托盤20和卡盤本體之間以及托盤20和被加工元件21之間均產生靜電吸附力，即在托盤20和卡盤本體之間產生靜電吸附力以及在托盤20和被加工元件21之間產生靜電吸附力，從而在卡盤本體能夠將托盤20吸附在其上表面的同時，使托盤20將被加工元件21吸附在其裝片位201上。 In this embodiment, the clamping device 26 and the tray 20 and the tray 20 and the workpiece 21 are fixed together by means of electrostatic attraction. Specifically, referring to FIG. 9A, the clamping device 26 includes an electrostatic chuck and a DC power source, wherein the electrostatic chuck includes a chuck body made of a conductive material and covering the surface of the conductive material. Insulating material, conductive material is used as the electrode of the chuck body and grounded; the tray 20 is made of conductive material, and the surface of the conductive material is covered with insulating material to ensure that the tray 20 is not etched by the plasma in the reaction chamber 100 ; The conductive material is used as the tray electrode and is electrically connected to the DC power supply. After the DC power is turned on, electrostatic attraction is generated between the tray 20 and the chuck body, and between the tray 20 and the processed component 21, that is, the tray 20 and An electrostatic adsorption force is generated between the chuck bodies and an electrostatic adsorption force is generated between the tray 20 and the processed component 21, so that the tray 20 will absorb the processed component 21 while the chuck body can adsorb the tray 20 on its upper surface. Adsorbed on its loading position 201.
在實際應用中，卡盤本體也可以採用絕緣材料製作，並在絕緣材料內部埋設卡盤電極，相同地，托盤20也可以採用絕緣材料製作，並在絕緣材料內部埋設托盤電極。 In practical applications, the chuck body may also be made of an insulating material, and the chuck electrode is embedded in the insulating material. Similarly, the tray 20 may also be made of an insulating material, and the tray electrode is embedded in the insulating material.
雖然在本實施例中，在夾持裝置26與托盤20之間以及托盤20與被加工元件21之間均採用靜電引力的方式固定在一起，但是本發明並不侷限於此，在實際應用中，也可以僅在托盤20與被加工元件21之間採用靜電引力的方式固定在一起，而在夾持裝置26與托盤20之間採用機械固定的方式固定在一起，例如圖9B所示，該夾持裝置包括機械卡盤和直流電源，其中，機械卡盤採用機械固定的方式將托盤20 固定在其上表面，例如，機械卡盤可以包括用於承載被加工元件21的基座，以及用於將被加工元件21固定在該基座上的諸如機械夾具、壓環等工具；托盤20採用導電材料製作，並在導電材料的表面包覆絕緣材料，導電材料作為托盤電極，且與直流電源電連接；在接通直流電源後，在托盤20和被加工元件21之間會產生靜電引力，從而將被加工元件21固定在托盤20的裝片位201上。同樣地，托盤20也可以採用絕緣材料製作，並在絕緣材料內部埋設托盤電極。 Although in this embodiment, the clamping device 26 and the tray 20 and the tray 20 and the processed element 21 are fixed together by means of electrostatic attraction, the present invention is not limited to this. In practical applications Alternatively, it may be fixed only by electrostatic attraction between the tray 20 and the processed component 21, and fixed mechanically between the holding device 26 and the tray 20, for example, as shown in FIG. 9B, the The clamping device includes a mechanical chuck and a DC power source. The mechanical chuck mechanically fixes the tray 20 It is fixed on its upper surface. For example, the mechanical chuck may include a base for carrying the processed element 21 and tools such as a mechanical clamp, a pressing ring and the like for fixing the processed element 21 on the base; the tray 20 It is made of conductive material, and the surface of the conductive material is covered with insulating material. The conductive material is used as the tray electrode and is electrically connected to the DC power supply. After the DC power is connected, electrostatic attraction will be generated between the tray 20 and the processed component 21. Thus, the processing element 21 is fixed on the loading position 201 of the tray 20. Similarly, the tray 20 may be made of an insulating material, and a tray electrode is embedded in the insulating material.
此外，在實際應用中，在托盤20與被加工元件21之間還可以採用機械固定等的方式固定在一起，事實上，無需限制托盤20的固定方式，只要托盤20能夠將被加工元件21固定在其上表面上即可。 In addition, in practical applications, the tray 20 and the processed component 21 can also be fixed together by means of mechanical fixing. In fact, there is no need to limit the fixing method of the tray 20, as long as the tray 20 can fix the processed component 21 On its top surface.
請參閱圖10所示，其為本發明第二實施例提供的等離子體加工設備的結構示意圖。本實施例提供的等離子體加工設備與第一實施例相比，同樣包括反應腔室100、氣源28、位於反應腔室100內的夾持裝置26、置於該夾持裝置26上的托盤20以及壓力流量控制器43和質量流量控制器44。由於上述裝置或設備的功能和連接關係在第一實施例中已有了詳細地描述，於此不再贅述，下面僅對本實施例與第一實施例的不同點進行詳細地描述。 Please refer to FIG. 10, which is a schematic structural diagram of a plasma processing apparatus according to a second embodiment of the present invention. Compared with the first embodiment, the plasma processing equipment provided in this embodiment also includes a reaction chamber 100, an air source 28, a clamping device 26 located in the reaction chamber 100, and a tray placed on the clamping device 26. 20 and pressure flow controller 43 and mass flow controller 44. Since the functions and connection relationships of the foregoing devices or devices have been described in detail in the first embodiment, they are not repeated here, and only the differences between this embodiment and the first embodiment are described in detail below.
具體而言，在本實施例中，氣源還包括第一氣源45和第二氣源46，並且，在夾持裝置26內同樣設置有相互獨立的第一氣路41和第二氣路42，第一氣路41的輸出端延伸至夾持裝置26的上表面，且單獨與托盤20的中間進氣通道相連通；第一氣路41的輸入端與第一氣源45相連通；第二氣路42的輸出端延伸至夾持裝置26的上表面，且單獨與托盤20的邊緣進氣通道相連通；第二氣路42的輸入端與第二氣源 46相連通，在進行加工的過程中，第一氣源45經由第一氣路41單獨向托盤20的中間進氣通道輸送熱交換氣體；第二氣源46經由第二氣路42單獨向托盤20的邊緣進氣通道輸送熱交換氣體。 Specifically, in this embodiment, the air source further includes a first air source 45 and a second air source 46, and a first gas path 41 and a second gas path that are independent of each other are also provided in the clamping device 26. 42, the output end of the first air path 41 extends to the upper surface of the clamping device 26, and is in communication with the middle intake channel of the tray 20 alone; the input end of the first air path 41 is in communication with the first air source 45; The output end of the second air path 42 extends to the upper surface of the clamping device 26 and is in communication with the edge air inlet channel of the tray 20 separately; the input end of the second air path 42 and the second air source 46 is connected. During the processing, the first air source 45 separately delivers heat exchange gas to the middle intake channel of the tray 20 via the first gas path 41; the second air source 46 separately delivers to the tray via the second gas path 42 20's edge air intake channel conveys heat exchange gas.
請參閱圖11所示，其為本發明第三實施例提供的等離子體加工設備的結構示意圖。本發明第三實施例提供的等離子體加工設備與第二實施例相比，同樣包括反應腔室100、氣源28、位於反應腔室100內的夾持裝置26，以及置於該夾持裝置26上的托盤20。由於上述裝置或設備的功能和連接關係在第一、第二實施例中已有了詳細的描述，於此不再贅述，下面僅對本實施例與第一、第二實施例的不同點進行詳細地描述。 Please refer to FIG. 11, which is a schematic structural diagram of a plasma processing apparatus according to a third embodiment of the present invention. Compared with the second embodiment, the plasma processing equipment provided by the third embodiment of the present invention also includes a reaction chamber 100, an air source 28, a clamping device 26 located in the reaction chamber 100, and the clamping device. 26 的 Pallet 20. Since the functions and connection relationships of the above devices or devices have been described in detail in the first and second embodiments, they are not repeated here, and only the differences between this embodiment and the first and second embodiments are detailed below.地 描述。 Description.
具體而言，在本實施例中，在夾持裝置26內設置有氣路27，氣路27的輸出端延伸至夾持裝置26的上表面，且分別與托盤20的中間進氣通道和邊緣進氣通道相連通；氣路27的輸入端與氣源28相連通；氣源28經由氣路27同時向托盤20的中間進氣通道和邊緣進氣通道輸送熱交換氣體。 Specifically, in this embodiment, an air path 27 is provided in the holding device 26, and the output end of the air path 27 extends to the upper surface of the holding device 26 and is respectively connected to the intermediate air inlet channel and edge of the tray 20 The air intake channel is in communication; the input end of the gas path 27 is in communication with the air source 28; the air source 28 transmits heat exchange gas to the middle intake channel and the edge intake channel of the tray 20 at the same time via the air channel 27.
在實際應用中，也可以在本實施例中的等離子體加工設備的氣源和氣路其中之一上設置壓力流量控制器或質量流量控制器，以在整體上調節流經中間進氣通道和邊緣進氣通道的熱交換氣體的流量，即同時調節流經中間進氣通道和邊緣進氣通道的熱交換氣體的流量。 In practical applications, a pressure flow controller or a mass flow controller may also be provided on one of the gas source and the gas path of the plasma processing equipment in this embodiment, so as to adjust the flow through the intermediate intake channel and the edge as a whole. The flow rate of the heat exchange gas in the intake passage, that is, the flow rate of the heat exchange gas flowing through the intermediate intake passage and the edge intake passage is adjusted at the same time.
特別的是，為了控制流經中間進氣通道和邊緣進氣通道的熱交換氣體的流量，可以在邊緣進氣通道的出氣口的前端和中間進氣通道的出氣口的前端的任何位置設置壓力流量控制器或質量流量控 制器。所謂邊緣進氣通道的出氣口的前端和中間進氣通道的出氣口的前端分別是指邊緣進氣通道的出氣口和中間進氣通道的出氣口與氣源之間的任意位置。 In particular, in order to control the flow of the heat exchange gas flowing through the intermediate intake passage and the edge intake passage, a pressure may be set at any position of the front end of the air inlet of the edge intake passage and the front end of the air outlet of the intermediate intake passage. Flow controller or mass flow control System. The front ends of the air inlets of the edge air intake channel and the front ends of the air outlets of the intermediate air inlet channel refer to any positions between the air outlet of the edge air inlet channel and the air outlet of the middle air inlet channel and the air source, respectively.
以上所述僅是本發明的較佳實施例而已，並非對本發明做任何形式上的限制，雖然本發明已以較佳實施例揭露如上，然而並非用以限定本創作，任何所屬技術領域中具有通常知識者，在不脫離本發明技術方案的範圍內，當可利用上述揭示的技術內容作出些許更動或修飾為等同變化的等效實施例，但凡是未脫離本發明技術方案的內容，依據本發明的技術實質對以上實施例所作的任何簡單修改、等同變化與修飾，均仍屬於本發明技術方案的範圍內。 The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Although the present invention has been disclosed as above with the preferred embodiments, they are not intended to limit the present invention. Generally, a person skilled in the art can use the disclosed technical content to make minor changes or modifications to equivalent embodiments without departing from the technical solution of the present invention. Anyone who does not depart from the technical solution of the present invention according to the present invention Technical essence of the invention Any simple modifications, equivalent changes, and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.
20‧‧‧托盤裝置 20‧‧‧Tray device
201‧‧‧裝片位 201‧‧‧ Loading position
21‧‧‧被加工元件 21‧‧‧Processed element
23‧‧‧中央進氣孔 23‧‧‧ central air inlet
24‧‧‧中間進氣孔 24‧‧‧ middle air inlet
25‧‧‧邊緣進氣孔 25‧‧‧Edge air inlet
Claims (17)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310158104.0A CN104134624B (en) | 2013-05-02 | 2013-05-02 | Pallet and plasma processing device |
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| TW201444018A TW201444018A (en) | 2014-11-16 |
| TWI619195B true TWI619195B (en) | 2018-03-21 |
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| JP (1) | JP2016520255A (en) |
| KR (1) | KR20160003251A (en) |
| CN (1) | CN104134624B (en) |
| SG (1) | SG11201509007PA (en) |
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| WO (1) | WO2014176922A1 (en) |
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| CN107086186B (en) * | 2016-02-15 | 2019-10-29 | 北京北方华创微电子装备有限公司 | A kind of reaction chamber and substrate processing apparatus |
| CN106531601B (en) * | 2016-10-31 | 2018-03-20 | 中国电子科技集团公司第四十八研究所 | A kind of work stage for ion bean etcher |
| CN111286723A (en) * | 2018-12-10 | 2020-06-16 | 昭和电工株式会社 | Susceptor and chemical vapor deposition apparatus |
| TWI701751B (en) * | 2019-03-12 | 2020-08-11 | 力晶積成電子製造股份有限公司 | Wafer chuck apparatus , method for measuring wafer bow value and semiconductor manufacturing method |
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| US20040055540A1 (en) * | 2002-03-05 | 2004-03-25 | Seiichiro Kanno | Wafer stage for wafer processing apparatus |
| TWI267940B (en) * | 2004-06-28 | 2006-12-01 | Kyocera Corp | Electrostatic chuck |
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| US5382311A (en) * | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| TWI234417B (en) * | 2001-07-10 | 2005-06-11 | Tokyo Electron Ltd | Plasma procesor and plasma processing method |
| JP2003224180A (en) * | 2002-01-28 | 2003-08-08 | Kyocera Corp | Wafer support member |
| JP2003282692A (en) * | 2002-03-27 | 2003-10-03 | Matsushita Electric Ind Co Ltd | Substrate carrying tray and substrate processing apparatus using this tray |
| CN100468619C (en) * | 2006-08-23 | 2009-03-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Temperature control device of etching equipment and its method for controlling wafer temperature |
| JP5145126B2 (en) * | 2008-06-11 | 2013-02-13 | 株式会社アルバック | Bonding apparatus and bonding method |
| CN101770973B (en) * | 2009-01-04 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma process equipment and static chuck device |
| KR101174816B1 (en) * | 2009-12-30 | 2012-08-17 | 주식회사 탑 엔지니어링 | Focus Ring of Plasma Processing Apparatus and Plasma Processing Apparatus Having the Same |
| JP5550602B2 (en) * | 2011-04-28 | 2014-07-16 | パナソニック株式会社 | Electrostatic chuck and dry etching apparatus having the same |
| JP6285620B2 (en) * | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | Electrostatic chuck and semiconductor / liquid crystal manufacturing equipment |
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2013
- 2013-05-02 CN CN201310158104.0A patent/CN104134624B/en active Active
- 2013-12-23 WO PCT/CN2013/090220 patent/WO2014176922A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040055540A1 (en) * | 2002-03-05 | 2004-03-25 | Seiichiro Kanno | Wafer stage for wafer processing apparatus |
| TWI267940B (en) * | 2004-06-28 | 2006-12-01 | Kyocera Corp | Electrostatic chuck |
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| WO2014176922A1 (en) | 2014-11-06 |
| SG11201509007PA (en) | 2015-11-27 |
| CN104134624A (en) | 2014-11-05 |
| TW201444018A (en) | 2014-11-16 |
| KR20160003251A (en) | 2016-01-08 |
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| JP2016520255A (en) | 2016-07-11 |
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