TWI617367B - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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TWI617367B
TWI617367B TW105106666A TW105106666A TWI617367B TW I617367 B TWI617367 B TW I617367B TW 105106666 A TW105106666 A TW 105106666A TW 105106666 A TW105106666 A TW 105106666A TW I617367 B TWI617367 B TW I617367B
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liquid
substrate
liquid film
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TW201703882A (en
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Kenji Kobayashi
小林健司
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SCREEN Holdings Co., Ltd.
思可林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本發明為一種基板處理方法，其包含：水平保持基板之基板保持步驟；於上述基板之上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的液膜去除區域，將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體，由第1吐出口吐出，並對上述處理液之液膜，由與該上表面交叉之方向吹附上述第1氣體的第1氣體吐出步驟；將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體，由與上述第1吐出口相異、且為環狀之第2吐出口，朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟。 The present invention is a substrate processing method, comprising: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate; After the film formation step, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is spit out from the first The first gas is ejected from the outlet, and the liquid film of the treatment liquid is blown with the first gas in a direction crossing the upper surface; The second gas ejecting step is a second gas ejecting step that is laterally and radially ejected from the annular second ejection opening which is different from the first ejection opening; and a liquid which expands the liquid film removal area. Film removal area expansion step.

Description

基板處理方法及基板處理裝置 Substrate processing method and substrate processing device

本發明係關於使用處理液對基板上表面進行處理之基板處理方法及基板處理裝置。成為處理對象之基板的例子，包括半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(FED，Field Emission Display)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽電池用基板等。 The present invention relates to a substrate processing method and a substrate processing apparatus for processing a top surface of a substrate using a processing liquid. Examples of substrates to be processed include semiconductor wafers, substrates for liquid crystal display devices, substrates for plasma displays, substrates for field emission display (FED), substrates for optical disks, substrates for magnetic disks, and magneto-optical disks Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

於半導體裝置之製造步驟中，係對半導體晶圓等之基板之表面供給處理液，使用處理液對此基板表面進行處理。 In the manufacturing step of the semiconductor device, a processing liquid is supplied to the surface of a substrate such as a semiconductor wafer, and the surface of the substrate is processed using the processing liquid.

例如，以單片處理基板之單片式的基板處理裝置，係具備：幾乎水平地保持基板，並使其基板旋轉的旋轉夾具；與對藉此旋轉夾具所旋轉之基板之上表面供給處理液的噴嘴。例如，對保持於旋轉夾具之基板供給藥液，其後供給沖洗液，藉此將基板上之藥液置換為沖洗液。其後，進行自基板上表面排除沖洗液的乾燥處理。 For example, a monolithic substrate processing apparatus that processes substrates monolithically includes a rotating jig holding the substrate almost horizontally and rotating the substrate, and supplying a processing liquid to the upper surface of the substrate rotated by the rotating jig. Nozzle. For example, a chemical solution is supplied to a substrate held in a rotating jig, and then a rinsing solution is supplied, thereby replacing the chemical solution on the substrate with a rinsing solution. Thereafter, a drying process is performed in which the rinse liquid is removed from the upper surface of the substrate.

作為乾燥處理，已知有為了抑制水痕(water mark)發生，將沸點低於水之異丙醇(isopropyl alcohol，IPA)之蒸氣供給至呈旋轉狀態的基板之表面的手法。例如旋轉乾燥(rotagoni drying，參照美國專利申請案號2009/0101181 A1)為其手法之一例。 As a drying process, in order to suppress the occurrence of water marks, a method of supplying vapor of isopropyl alcohol (IPA) having a boiling point lower than that of water to the surface of a substrate in a rotating state is known. For example, rotary drying (refer to US Patent Application No. 2009/0101181 A1) is an example of the method.

作為此種乾燥方法，具體而言係於基板上表面形成處理液(沖洗液)之液膜，對此處理液之液膜吹附低表面張力液(IPA)之蒸氣，形成液膜去除區域。然後，使液膜去除區域擴大，將液膜去除區域擴展至基板上表面之全區域，藉此使基板上表面乾燥。 As such a drying method, specifically, a liquid film of a processing liquid (rinsing liquid) is formed on the upper surface of a substrate, and a vapor of a low surface tension liquid (IPA) is blown onto the liquid film of the processing liquid to form a liquid film removal region. Then, the liquid film removal area is enlarged, and the liquid film removal area is extended to the entire area of the upper surface of the substrate, thereby drying the upper surface of the substrate.

然而，此種乾燥方法中，有於乾燥後之基板表面(處理對象面)發生顆粒的情形。 However, in this drying method, particles may be generated on the substrate surface (the processing target surface) after drying.

因此，本發明之目的在於提供可於抑制或防止顆粒生成之下，對基板上表面進行乾燥的基板處理方法及基板處理裝置。 Therefore, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of drying the upper surface of a substrate while suppressing or preventing generation of particles.

本案發明人等認為，使用低表面張力液之蒸氣的乾燥手法(旋轉乾燥等)中顆粒發生的原因係如下述。亦即，使用處理液處理的結果，有形成於基板上表面之處理液之液膜中含有顆粒的情形。若液膜去除區域擴大，則基板上表面與處理液之液膜與氣相間之邊界(包含氣液固之三相界面的邊界)朝外側(亦即處理液之液膜側)移動。隨著液膜去除區域之擴大，於處理液之液膜中接近上述邊界的部分(所謂「處理液之液膜的邊界部分」。以下此項目中相同)成為含有顆粒。 The inventors of the present invention believe that the cause of particle generation in a drying method (rotary drying, etc.) using a vapor of a low surface tension liquid is as follows. That is, as a result of the treatment with the treatment liquid, particles may be contained in the liquid film of the treatment liquid formed on the upper surface of the substrate. If the area for removing the liquid film is enlarged, the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase (including the boundary of the three-phase interface of the gas-liquid-solid interface) moves outward (that is, the liquid film side of the processing liquid). With the expansion of the area where the liquid film is removed, the portion near the boundary in the liquid film of the processing liquid (the so-called "boundary portion of the liquid film of the processing liquid". The same applies to this item below) becomes particles.

於此處理液之液膜的邊界部分之內部，係發生熱對流。此熱對流係朝接近處理液之液膜與基板上表面與氣相間之邊界的方向流動。因此，若於處理液之液膜的邊界部分含有顆粒，則該顆粒因熱對流而被促進至朝基板上表面及氣相間之邊界的方向，由該邊界移動至液膜去除區域，出現於基板上表面。然後，在去除了處理液之液膜後的基板上表面，有顆粒殘存。本案發明人等認為此係顆粒發生的機制。 Inside the boundary portion of the liquid film of this treatment liquid, thermal convection occurs. This thermal convection flows toward the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase. Therefore, if particles are contained in the boundary portion of the liquid film of the processing liquid, the particles are promoted toward the boundary between the upper surface of the substrate and the gas phase due to thermal convection, and the boundary moves to the liquid film removal area and appears on the substrate. On the surface. Then, particles remained on the upper surface of the substrate after the liquid film of the processing liquid was removed. The inventors of this case believe that this is the mechanism of particle generation.

又，本案發明人等得知，若處理液之液膜與基板上表面與氣相間之邊界的周圍環境呈具有較該處理液低之表面張力的低表面張力液的富蒸氣狀態，則於處理液之液膜的邊界部分的內部不發生熱對流，而且於處理液之液膜的邊界部分的內部，產生朝向處理液之液膜與基板上表面與氣相間之邊界遠離之方向(亦即與熱對流反向)流動的馬蘭哥尼對流。 In addition, the inventors of the present application have learned that if the surrounding environment of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase is in a vapor-rich state of a low surface tension liquid having a surface tension lower than that of the processing liquid, Thermal convection does not occur inside the boundary portion of the liquid film of the liquid, and inside the boundary portion of the liquid film of the processing liquid, a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase (i.e., and Thermal Convection Reverse) Flowing Marangoni Convection.

本發明提供一種基板處理方法，其包含：水平保持基板之基板保持步驟；於上述基板上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的液膜去除區域，將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體，由第1吐出口吐出，並對上述處理液之液膜，由與該上表面交叉之方向吹附上述第1氣體的第1氣體吐出步驟；將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體，由與上述第1吐出口相異、環狀之第2吐出口，朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟。 The present invention provides a substrate processing method, comprising: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate; and the liquid film After the forming step, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is discharged from the first outlet. The first gas discharge step of blowing out and spraying the first gas on the liquid film of the treatment liquid in a direction crossing the upper surface; vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid A second gas ejection step of laterally and radially ejecting the second gas from the annular second ejection opening which is different from the first ejection outlet; and a liquid film removal area for expanding the liquid film removal area. Expand steps.

根據此方法，藉由對形成於基板上表面之處理液之液膜，將含有低表面張力液之蒸氣的第1氣體，自與基板上表面交叉之方向吹附，而於處理液之液膜形成液膜去除區域。藉由此液膜去除區域的擴大，基板上表面與處理液之液膜與氣相間之邊界朝基板外部移動。藉由使液膜去除區域擴大至基板全區域，使基板上表面之全區域乾燥。 According to this method, a first film containing a vapor of a low surface tension liquid is blown onto the liquid film of the processing liquid formed on the upper surface of the substrate from a direction intersecting the upper surface of the substrate, and the liquid film of the processing liquid is blown. A liquid film removal area is formed. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

又，含有低表面張力液之蒸氣的第2氣體，係由環狀 之第2吐出口朝橫向且放射狀地吐出。由第2吐出口所吐出之第2氣體，係供給至形成於基板上表面之處理液之液膜的周圍。從而，可將處理液之液膜之周圍環境保持為富含低表面張力液之蒸氣的狀態。因此，在液膜去除區域形成後，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境保持為富含低表面張力液之蒸氣的狀態。藉此，於處理液之液膜的邊界部分的內部，可產生朝向處理液之液膜與基板上表面與氣相間之邊界遠離之方向流動的馬蘭哥尼對流，且可維持所發生的馬蘭哥尼對流。 In addition, the second gas containing the vapor of the low surface tension liquid is formed in a ring shape. The second outlet is discharged horizontally and radially. The second gas discharged from the second discharge port is supplied around the liquid film of the processing liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment of the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid, and the generated Marango can be maintained Convection.

從而，在處理液之液膜中含有顆粒的情況，此顆粒被馬蘭哥尼對流朝基板上表面及氣相間之邊界遠離的方向促進。因此，可依處理液之液膜中之顆粒攝入於該液膜中的狀態，擴大液膜去除區域。處理液之液膜中所含的顆粒，不致出現於液膜去除區域，而與處理液之液膜一起自基板上表面被去除。因此，在基板乾燥後，基板上表面不殘存顆粒。藉此，可於抑制或防止顆粒發生之下，使基板上表面全區域乾燥。 Therefore, in the case where particles are contained in the liquid film of the processing liquid, the particles are promoted by the Marangoni convection in a direction away from the boundary between the upper surface of the substrate and the gas phase. Therefore, depending on the state where particles in the liquid film of the treatment liquid are taken up in the liquid film, the liquid film removal area can be enlarged. The particles contained in the liquid film of the processing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the processing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

又，亦可考慮例如將收容基板保持單元之腔室內部的全區域，以低表面張力液之蒸氣的環境充滿，並對處理液之液膜吹附低表面張力液之蒸氣。然而，此情況下，由於必須將腔室內部之全區域以低表面張力液之蒸氣環境充滿，故低表面張力液之消費量大增。 It is also conceivable to, for example, fill the entire area inside the chamber containing the substrate holding unit with an environment of low surface tension liquid vapor, and blow the liquid film of the processing liquid with low surface tension liquid vapor. However, in this case, since the entire area inside the chamber must be filled with the vapor environment of the low surface tension liquid, the consumption of the low surface tension liquid is greatly increased.

相對於此，根據上述方法，藉由自第2吐出口朝橫向且放射狀地吐出第2氣體，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境保持為富含低表面張力液之蒸氣的狀態。藉此，可達到低表面張力液之省液化，並可使基板上表面良好地乾燥。 On the other hand, according to the method described above, by discharging the second gas laterally and radially from the second discharge port, it is possible to keep the surrounding environment at the boundary between the upper surface of the substrate and the boundary between the liquid film and the gas phase of the processing liquid low. The state of the vapor of the surface tension fluid. Thereby, the liquid saving of the low surface tension liquid can be achieved, and the upper surface of the substrate can be dried well.

本發明一實施形態中，上述第2吐出口係於鉛直方向上，配置於較上述第1吐出口更上方。根據此方法，由於第2吐出口配置於較第1吐出口更上方，故可藉由自第2吐出口所吐出之第2氣體之氣流，將基板上表面與處理液之液膜與氣相間之邊界的周圍由較第2吐出口更上方之區域予以遮斷。藉此，可將處理液之液膜與基板上表面與氣相間之邊界的周圍，保持為更加富含低表面張力液之蒸氣的狀態。 In one embodiment of the present invention, the second outlet is disposed in a vertical direction and is disposed above the first outlet. According to this method, since the second outlet is disposed above the first outlet, the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be separated by the gas flow of the second gas discharged from the second outlet. The periphery of the boundary is blocked by the area above the second outlet. Thereby, the periphery of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase can be maintained in a state of being more rich in the vapor of the low surface tension liquid.

上述基板處理方法亦可將上述第1氣體吐出步驟、與上述第2氣體吐出步驟並行實行。根據此方法，由於並行進行由第1吐出口之第1氣體的吐出、與由第2吐出口之第2氣體的吐出，故在液膜去除區域的擴大時，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境，持續保持為富含低表面張力液之蒸氣的狀態。藉此，可於處理液之液膜的邊界部分的內部，產生朝向處理液之液膜與基板上表面與氣相間之邊界遠離之方向流動的馬蘭哥尼對流。 The substrate processing method may be performed in parallel with the first gas discharge step and the second gas discharge step. According to this method, since the discharge of the first gas from the first discharge port and the discharge of the second gas from the second discharge port are performed in parallel, the surface of the substrate and the processing liquid can be expanded when the liquid film removal area is expanded. The surrounding environment at the boundary between the liquid film and the gas phase is continuously maintained as a vapor rich in low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid.

上述第2氣體吐出步驟亦可在上述第1氣體吐出步驟之開始前先開始。根據此方法，由於在由第1吐出口開始吐出第1氣體前即開始由第2吐出口吐出第2氣體，故可以基板上表面附近之環境為富含低表面張力液之蒸氣的狀態，開始液膜去除區域之形成。 The second gas discharge step may be started before the first gas discharge step is started. According to this method, since the second gas is discharged from the second discharge port before the first gas is discharged from the first discharge port, the environment near the upper surface of the substrate can be in a state of being rich in the vapor of the low surface tension liquid. Formation of liquid film removal area.

上述液膜去除區域擴大步驟亦可包含：使由上述第1吐出口所吐出之上述第1氣體的流量，在該第1氣體之吐出開始後逐漸增大的第1流量增大步驟。此時，上述基板處理方法亦可進一步包含：使由上述第2吐出口所吐出之上述第2氣體的流量，在該 第2氣體之吐出開始後逐漸增大的第2流量增大步驟。 The step of expanding the liquid film removal region may include a first flow rate increasing step of gradually increasing the flow rate of the first gas discharged from the first discharge port after the first gas discharge is started. In this case, the substrate processing method may further include: adjusting a flow rate of the second gas discharged from the second discharge port, in which A second flow rate increasing step that gradually increases after the second gas discharge starts.

根據此方法，藉由在第1氣體之吐出開始後，使該第1氣體之流量逐漸增大，可擴大液膜去除區域。此時，由於亦使第2氣體之流量在該第2氣體之吐出開始後逐漸增大，故不論液膜去除區域之擴大狀況，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境持續保持為富含低表面張力液之蒸氣的狀態。 According to this method, after the discharge of the first gas is started, the flow rate of the first gas is gradually increased, so that the liquid film removal area can be enlarged. At this time, since the flow rate of the second gas is gradually increased after the discharge of the second gas is started, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be increased regardless of the expansion of the liquid film removal area. The surrounding environment is continuously maintained as a vapor rich in low surface tension liquid.

上述處理液係包括沖洗液，上述低表面張力液亦可含有有機溶劑。 The processing liquid system includes a washing liquid, and the low surface tension liquid may contain an organic solvent.

根據此方法，藉由對形成於基板上表面之沖洗液之液膜，將含有低表面張力液之蒸氣的第1氣體，自與基板上表面交叉之方向吹附，而於沖洗液之液膜形成液膜去除區域。藉由此液膜去除區域的擴大，基板上表面與沖洗液之液膜與氣相間之邊界朝基板外部移動。藉由使液膜去除區域擴大至基板全區域，使基板上表面之全區域乾燥。 According to this method, the first film containing the vapor of a low surface tension liquid is blown to the liquid film of the washing liquid formed on the upper surface of the substrate from the direction intersecting the upper surface of the substrate, and the liquid film of the washing liquid is blown. A liquid film removal area is formed. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

又，含有低表面張力液之蒸氣的第2氣體，係由環狀之第2吐出口朝橫向且放射狀地吐出。由第2吐出口所吐出之第2氣體，係供給至形成於基板上表面之沖洗液之液膜的周圍。從而，可將沖洗液之液膜之周圍環境保持為富含低表面張力液之蒸氣的狀態。因此，在液膜去除區域的形成後，可將基板上表面與沖洗液之液膜與氣相間之邊界的周圍環境保持為富含低表面張力液之蒸氣的狀態。藉此，於沖洗液之液膜的邊界部分的內部，可產生朝向沖洗液之液膜與基板上表面與氣相間之邊界遠離之方向流動的馬蘭哥尼對流，且可維持所發生的馬蘭哥尼對流。 The second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the liquid film of the rinse liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the rinsing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid can be maintained in a state rich in low surface tension liquid vapor. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the washing liquid and the boundary between the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the washing liquid, and the occurred Marango can be maintained Convection.

從而，在沖洗液之液膜中含有顆粒的情況，此顆粒被 馬蘭哥尼對流朝基板上表面及氣相間之邊界遠離的方向促進。因此，可依沖洗液之液膜中之顆粒攝入於該液膜中的狀態，擴大液膜去除區域。沖洗液之液膜中所含的顆粒，不致出現於液膜去除區域，而與沖洗液之液膜一起自基板上表面被去除。因此，在基板乾燥後，基板上表面不殘存顆粒。藉此，可於抑制或防止顆粒發生之下，使基板上表面全區域乾燥。 Therefore, in the case where particles are contained in the liquid film of the washing solution, the particles are Marangoni convection is promoted away from the upper surface of the substrate and the boundary between the gas phase. Therefore, the liquid film removal area can be enlarged according to the state in which particles in the liquid film of the rinsing liquid are absorbed in the liquid film. The particles contained in the liquid film of the washing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the washing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

本發明提供一種基板處理裝置，其包含：水平保持基板之基板保持單元；用於朝上述基板上表面供給處理液的處理液供給單元；噴嘴，係具有用於朝下吐出氣體之第1吐出口、與用於朝橫向吐出氣體之環狀之第2吐出口；第1氣體供給單元，係對上述第1吐出口，供給含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體；第2氣體供給單元，係對上述第2吐出口，供給含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體；使保持於上述基板保持單元之基板旋轉的基板旋轉單元；與控制單元，係控制上述處理液供給單元、上述第1氣體供給單元、上述第2氣體供給單元及上述基板旋轉單元；上述控制單元係實行：於上述基板上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的液膜去除區域，將上述第1氣體由上述第1吐出口吐出，對上述處理液之液膜吹附上述第1氣體的第1氣體吐出步驟；由上述第2吐出口，將上述第2氣體朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟。 The present invention provides a substrate processing apparatus comprising: a substrate holding unit for horizontally holding a substrate; a processing liquid supply unit for supplying a processing liquid to an upper surface of the substrate; and a nozzle having a first discharge port for discharging gas downward. And a ring-shaped second discharge port for discharging the gas in the lateral direction; the first gas supply unit supplies the first discharge port with vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid; The first gas and the second gas supply unit supply a second gas containing a low surface tension liquid having a lower surface tension than the processing liquid to the second discharge port; and the substrate held in the substrate holding unit Rotating substrate rotation unit; and a control unit that controls the processing liquid supply unit, the first gas supply unit, the second gas supply unit, and the substrate rotation unit; the control unit performs: supplying processing on the upper surface of the substrate Liquid to form a liquid film forming step of a liquid film covering the upper surface of the substrate; after the above liquid film forming step, Forming a liquid film removal area from the liquid film removal liquid film of the processing liquid, discharging the first gas from the first outlet, and blowing a first gas discharge step of spraying the first gas onto the liquid film of the processing liquid; A second gas discharge step of discharging the second gas radially and radially from the second discharge port; and a liquid film removal region expansion step of expanding the liquid film removal region.

根據此構成，藉由對形成於基板上表面之處理液之液 膜，將含有低表面張力液之蒸氣的第1氣體，由與基板上表面交叉之方向吹附，而於處理液之液膜形成液膜去除區域。藉由此液膜去除區域的擴大，基板上表面與處理液之液膜與氣相間之邊界朝基板外部移動。藉由使液膜去除區域擴大至基板全區域，使基板上表面之全區域乾燥。 According to this configuration, the liquid of the processing liquid formed on the upper surface of the substrate is used. The first gas containing the vapor of the low surface tension liquid is blown in a direction crossing the upper surface of the substrate, and a liquid film removal region is formed on the liquid film of the processing liquid. By this expansion of the liquid film removal area, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid moves toward the outside of the substrate. By expanding the liquid film removal area to the entire area of the substrate, the entire area of the upper surface of the substrate is dried.

又，含有低表面張力液之蒸氣的第2氣體，係由環狀之第2吐出口朝橫向且放射狀地吐出。由第2吐出口所吐出之第2氣體，係供給至形成於基板上表面之處理液之液膜的周圍。從而，可將處理液之液膜之周圍環境保持為富含低表面張力液之蒸氣的狀態。因此，在液膜去除區域的形成後，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境保持為富含低表面張力液之蒸氣的狀態。藉此，於處理液之液膜的邊界部分的內部，可產生朝向處理液之液膜與基板上表面與氣相間之邊界遠離之方向流動的馬蘭哥尼對流，且可維持所發生的馬蘭哥尼對流。 The second gas containing the vapor of the low surface tension liquid is discharged laterally and radially from the annular second discharge port. The second gas discharged from the second discharge port is supplied around the liquid film of the processing liquid formed on the upper surface of the substrate. Therefore, the surrounding environment of the liquid film of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. Therefore, after the formation of the liquid film removal region, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film and the gas phase of the processing liquid can be maintained in a state of being rich in the vapor of the low surface tension liquid. As a result, Marangoni convection flowing in a direction away from the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be generated inside the boundary portion of the liquid film of the processing liquid, and the generated Marango can be maintained Convection.

從而，在處理液之液膜中含有顆粒的情況，此顆粒被馬蘭哥尼對流朝基板上表面及氣相間之邊界遠離的方向促進。因此，可依處理液之液膜中之顆粒攝入於該液膜中的狀態，擴大液膜去除區域。處理液之液膜中所含的顆粒，不致出現於液膜去除區域，而與處理液之液膜一起由基板上表面被去除。因此，在基板乾燥後，基板上表面不殘存顆粒。藉此，可於抑制或防止顆粒發生之下，使基板上表面全區域乾燥。 Therefore, in the case where particles are contained in the liquid film of the processing liquid, the particles are promoted by the Marangoni convection in a direction away from the boundary between the upper surface of the substrate and the gas phase. Therefore, depending on the state where particles in the liquid film of the treatment liquid are taken up in the liquid film, the liquid film removal area can be enlarged. The particles contained in the liquid film of the processing liquid do not appear in the liquid film removing area, but are removed from the upper surface of the substrate together with the liquid film of the processing liquid. Therefore, after the substrate is dried, no particles remain on the upper surface of the substrate. Thereby, the entire area of the upper surface of the substrate can be dried while suppressing or preventing the occurrence of particles.

又，亦可考慮例如將收容基板保持單元之腔室內部的全區域，以低表面張力液之蒸氣的環境充滿，並對處理液之液膜吹附低表面張力液之蒸氣。然而，此情況下，由於必須將腔室內部之 全區域以低表面張力液之蒸氣環境充滿，故低表面張力液之消費量大增。 It is also conceivable to, for example, fill the entire area inside the chamber containing the substrate holding unit with an environment of low surface tension liquid vapor, and blow the liquid film of the processing liquid with low surface tension liquid vapor. However, in this case, it is necessary to The entire area is filled with a low surface tension liquid vapor environment, so the consumption of low surface tension liquid has greatly increased.

相對於此，根據上述構成，藉由自第2吐出口朝橫向且放射狀地吐出第2氣體，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境保持為富含低表面張力液之蒸氣的狀態。藉此，可達到低表面張力液之省液化，並可使基板上表面良好地乾燥。 On the other hand, according to the above configuration, by discharging the second gas laterally and radially from the second discharge port, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be kept low. The state of the vapor of the surface tension fluid. Thereby, the liquid saving of the low surface tension liquid can be achieved, and the upper surface of the substrate can be dried well.

本發明一實施形態中，上述噴嘴係包含於內部形成了用於流通上述第1氣體之第1流徑的第1筒體，藉由該筒體之下端部分形成上述第1吐出口，且於該第1筒體之下端部分設置凸緣，由上述第1吐出口所吐出之上述第1氣體係於上述基板之上表面與上述凸緣之間的空間流通。 According to an embodiment of the present invention, the nozzle includes a first cylinder having a first flow path through which the first gas flows, and the first outlet is formed by a lower end portion of the cylinder, and A flange is provided at a lower end portion of the first cylinder, and the first gas system discharged from the first discharge port circulates in a space between the upper surface of the substrate and the flange.

根據此構成，由第1吐出口所吐出之第1氣體，係於基板上表面與上述凸緣之間的空間流通，由凸緣之外周端與基板之間，放射狀且橫向地吐出。從而，在形成液膜去除區域後，來自凸緣之外周端與基板之間的第1氣體係沿著基板上表面朝周方向外部放射狀地流動。藉此，可對基板上表面與處理液之液膜與氣相間之邊界的周圍供給第1氣體，可將處理液之液膜與基板上表面與氣相間之邊界的周圍持續保持為富含低表面張力液之蒸氣的狀態。 According to this configuration, the first gas discharged from the first discharge port flows through the space between the upper surface of the substrate and the flange, and is radially and laterally discharged from between the outer peripheral end of the flange and the substrate. Therefore, after the liquid film removal area is formed, the first gas system from between the outer peripheral end of the flange and the substrate flows radially outward along the upper surface of the substrate in the circumferential direction. Thereby, the first gas can be supplied to the periphery of the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase, and the periphery of the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be kept low in richness. The state of the vapor of the surface tension fluid.

上述第2吐出口亦可配置於較上述凸緣更上方。 The second discharge port may be disposed above the flange.

根據此方法，第2吐出口配置於較凸緣更上方。因此，可藉由自第2吐出口所吐出之第2氣體之氣流，將基板上表面與處理液之液膜與氣相間之邊界的周圍由較第2吐出口更上方之區域予以遮斷。藉此，可將處理液之液膜與基板上表面與氣相間之邊界的周圍，保持在更加富含低表面張力液之蒸氣的狀態。 According to this method, the second outlet is disposed above the flange. Therefore, the periphery of the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be blocked by the area above the second outlet by the air flow of the second gas discharged from the second outlet. Thereby, the periphery of the liquid film of the processing liquid and the boundary between the upper surface of the substrate and the gas phase can be maintained in a state richer in the vapor of the low surface tension liquid.

上述噴嘴亦可進一步具有第2筒體，其係包圍上述第1筒體，於與上述第1筒體之間區劃出上述第2氣體所流通的第2流徑。此時，上述第2吐出口亦可藉由上述第2筒體與上述凸緣所形成。 The nozzle may further include a second cylinder, which surrounds the first cylinder, and defines a second flow path through which the second gas flows, between the first cylinder and the first cylinder. In this case, the second discharge port may be formed by the second cylinder and the flange.

根據此構成，由於第2吐出口、凸緣之外周端與基板之間呈上下排列，故由第2吐出口所吐出之第2氣體係供給至基板上表面與處理液之液膜與氣相間之邊界的周圍。藉此，可將處理液之液膜與基板上表面與氣相間之邊界的周圍保持為更進一步富含低表面張力液之蒸氣的狀態。 According to this configuration, since the second discharge port, the outer peripheral end of the flange, and the substrate are arranged up and down, the second gas system discharged from the second discharge port is supplied to the upper surface of the substrate and the liquid film and gas phase of the processing liquid. Around the border. Thereby, the periphery of the boundary between the liquid film of the processing liquid and the upper surface of the substrate and the gas phase can be maintained in a state of being further rich in the vapor of the low surface tension liquid.

上述基板處理裝置亦可進一步含有對向構件，其係與上述基板之上表面相對向，具有引導由上述第2吐出口所吐出之上述第2氣體的對向面。根據此構成，由第2吐出口所吐出之第2氣體充滿於對向面與基板上表面之間的空間。因此，可抑制第2氣體由基板上表面附近流出的情形。藉此，可將基板上表面與處理液之液膜與氣相間之邊界的周圍環境持續保持為更加富含低表面張力液之蒸氣的狀態。 The substrate processing apparatus may further include a facing member that faces the upper surface of the substrate and has a facing surface that guides the second gas discharged from the second outlet. With this configuration, the second gas discharged from the second discharge port fills the space between the facing surface and the upper surface of the substrate. Therefore, it is possible to suppress the second gas from flowing out from the vicinity of the upper surface of the substrate. Thereby, the surrounding environment at the boundary between the upper surface of the substrate and the liquid film of the processing liquid and the gas phase can be continuously maintained in a state of being more rich in the vapor of the low surface tension liquid.

上述對向構件亦可具有對向周緣部，其係與上述基板之上表面周緣部相對向，於與該上表面周緣部之間，形成較上述對向面之中央部與上述基板之上表面中央部之間的間隔更狹窄的狹窄間隔。 The facing member may have a facing peripheral edge portion which faces the peripheral edge portion of the upper surface of the substrate, and a center portion of the facing surface and the upper surface of the substrate are formed between the facing edge portion and the upper surface. The interval between the central portions is narrower and narrower.

根據此構成，由於在對向構件之對向周緣部與基板之上表面周緣部之間形成了狹窄間隔，故供給至對向面與基板上表面之間之空間的第2氣體難以由該空間被排出。因此，可更進一步抑制第2氣體由基板上表面附近流出的情形。藉此，可將基板上表面 與處理液之液膜與氣相間之邊界的周圍環境持續保持為更進一步富含低表面張力液之蒸氣的狀態。 According to this configuration, since a narrow gap is formed between the opposing peripheral edge portion of the opposing member and the peripheral edge portion of the upper surface of the substrate, it is difficult for the second gas supplied to the space between the opposing surface and the upper surface of the substrate to pass through the space. Be discharged. Therefore, it is possible to further suppress the second gas from flowing out from the vicinity of the upper surface of the substrate. With this, the upper surface of the substrate can be The surrounding environment at the boundary between the liquid film and the gas phase of the treatment liquid is continuously maintained in a state of being further rich in the vapor of the low surface tension liquid.

本發明之上述內容或其他目的、特徵及效果，將參照隨附圖式由下述實施形態之說明所闡明。 The above content or other objects, features, and effects of the present invention will be clarified by the following description of embodiments with reference to the accompanying drawings.

1、201、301‧‧‧基板處理裝置 1, 201, 301‧‧‧ substrate processing equipment

2‧‧‧處理單元 2‧‧‧ processing unit

3‧‧‧控制裝置 3‧‧‧control device

4‧‧‧空室 4‧‧‧ empty room

5‧‧‧旋轉夾具 5‧‧‧Rotating fixture

6‧‧‧藥液供給單元 6‧‧‧medicine supply unit

7‧‧‧沖洗液供給單元 7‧‧‧Flushing liquid supply unit

8‧‧‧氣體供給單元(第1氣體供給單元、第2氣體供給單元) 8‧‧‧ gas supply unit (first gas supply unit, second gas supply unit)

9‧‧‧杯 9‧‧‧ cup

10‧‧‧隔壁 10‧‧‧ next door

12‧‧‧排氣管 12‧‧‧ exhaust pipe

13‧‧‧旋轉馬達 13‧‧‧rotating motor

14‧‧‧旋轉軸 14‧‧‧rotation axis

15‧‧‧旋轉基底 15‧‧‧ rotating base

16‧‧‧挾持構件 16‧‧‧ holding component

17‧‧‧藥液噴嘴 17‧‧‧medicine nozzle

18‧‧‧藥液配管 18‧‧‧ liquid medicine piping

19‧‧‧藥液閥 19‧‧‧ Liquid medicine valve

20‧‧‧第1噴嘴臂 20‧‧‧The first nozzle arm

21‧‧‧第1噴嘴移動單元 21‧‧‧The first nozzle moving unit

22‧‧‧沖洗液噴嘴 22‧‧‧Flushing liquid nozzle

23‧‧‧沖洗液配管 23‧‧‧Flushing liquid pipe

24‧‧‧沖洗液閥 24‧‧‧Flushing Valve

25‧‧‧第2噴嘴臂 25‧‧‧ 2nd nozzle arm

26‧‧‧第2噴嘴移動單元 26‧‧‧Second nozzle moving unit

27‧‧‧氣體噴嘴 27‧‧‧gas nozzle

28‧‧‧第3噴嘴臂 28‧‧‧3rd nozzle arm

29‧‧‧第3噴嘴移動單元 29‧‧‧3rd nozzle moving unit

31‧‧‧內筒(第1筒體) 31‧‧‧Inner cylinder (1st cylinder)

31a‧‧‧下端部分 31a‧‧‧ lower part

32‧‧‧外筒(第2筒體) 32‧‧‧ outer cylinder (second cylinder)

32a‧‧‧下端緣 32a‧‧‧ lower edge

33‧‧‧凸緣 33‧‧‧ flange

33a‧‧‧外周端 33a‧‧‧outer end

33b‧‧‧上表面 33b‧‧‧upper surface

33c‧‧‧下表面 33c‧‧‧ lower surface

34‧‧‧第1氣體流徑 34‧‧‧The first gas flow path

35‧‧‧第1吐出口 35‧‧‧The first spit exit

36‧‧‧圓筒部 36‧‧‧Cylinder

37‧‧‧閉鎖部 37‧‧‧Locking Department

38‧‧‧第2氣體流徑 38‧‧‧ 2nd gas flow path

39‧‧‧第2吐出口 39‧‧‧The second exit

40‧‧‧第1氣體配管 40‧‧‧The first gas piping

41‧‧‧第1氣體閥 41‧‧‧The first gas valve

42‧‧‧第2氣體配管 42‧‧‧ 2nd gas piping

43‧‧‧第2氣體閥 43‧‧‧ 2nd gas valve

44‧‧‧液膜 44‧‧‧ liquid film

45‧‧‧液膜去除區域 45‧‧‧Liquid film removal area

46‧‧‧邊界 46‧‧‧ border

47‧‧‧邊界部分 47‧‧‧ border section

48‧‧‧混合氣體氣流 48‧‧‧ mixed gas flow

49‧‧‧馬蘭哥尼對流 49‧‧‧Marangoni Convection

50‧‧‧環狀出口 50‧‧‧Circle Exit

202、202A‧‧‧對向構件 202, 202A‧‧‧ Opposing members

203‧‧‧氣體噴嘴 203‧‧‧gas nozzle

204、204A‧‧‧對向面 Opposite to 204, 204A‧‧‧

205‧‧‧支架 205‧‧‧Scaffold

206‧‧‧第3氣體配管 206‧‧‧The third gas piping

207‧‧‧第3氣體閥 207‧‧‧3rd gas valve

208‧‧‧第4氣體配管 208‧‧‧4th gas piping

209‧‧‧第4氣體閥 209‧‧‧4th gas valve

210、210A‧‧‧空間 210, 210A‧‧‧Space

211‧‧‧支撐構件升降單元 211‧‧‧Supporting member lifting unit

212‧‧‧貫通孔 212‧‧‧through hole

302‧‧‧環狀突部(對向周緣部) 302‧‧‧ annular protrusion (opposite peripheral edge)

303‧‧‧錐形面 303‧‧‧ tapered surface

303a‧‧‧外周端 303a‧‧‧outer end

A1‧‧‧旋轉軸線 A1‧‧‧axis of rotation

A2‧‧‧鉛直軸線 A2‧‧‧Vertical axis

P‧‧‧顆粒 P‧‧‧ particles

SP‧‧‧空間 SP‧‧‧ Space

W‧‧‧基板 W‧‧‧ substrate

W1、W2‧‧‧間隔 W1, W2‧‧‧ intervals

圖1為由水平方向觀看本發明第1實施形態之基板處理裝置的圖。 FIG. 1 is a view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from a horizontal direction.

圖2為擴大表示上述基板處理裝置所具備之蒸氣噴嘴之正吐出混合氣體(IPA蒸氣+N2)之狀態的剖面圖。 FIG. 2 is an enlarged cross-sectional view showing a state in which a mixed gas (IPA vapor + N 2 ) is being discharged from a vapor nozzle provided in the substrate processing apparatus.

圖3為用於說明藉由上述基板處理裝置所進行之處理之第1處理例的流程圖。 FIG. 3 is a flowchart for explaining a first processing example of processing performed by the substrate processing apparatus.

圖4A至4F為用於說明上述第1處理例的圖解性圖。 4A to 4F are diagrams for explaining the above-mentioned first processing example.

圖5為表示處理時間、與來自第1吐出口及第2吐出口的混合氣體(IPA蒸氣+N2)吐出流量間之關係的圖。 FIG. 5 is a graph showing the relationship between the processing time and the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first and second outlets.

圖6A及6B為表示擴大液膜去除區域時，沖洗液之液膜的邊界部分的狀態的俯視圖。 6A and 6B are plan views showing a state of a boundary portion of a liquid film of a rinsing liquid when a liquid film removal region is enlarged.

圖7為用於說明藉由上述基板處理裝置所進行之處理之第2處理例的圖解性圖。 FIG. 7 is a schematic diagram for explaining a second processing example of processing performed by the substrate processing apparatus.

圖8為用於說明本發明第2實施形態之基板處理裝置之構成的圖解性圖。 FIG. 8 is a schematic diagram for explaining a configuration of a substrate processing apparatus according to a second embodiment of the present invention.

圖9為用於說明本發明第3實施形態之基板處理裝置之構成的圖解性圖。 FIG. 9 is a schematic diagram for explaining a configuration of a substrate processing apparatus according to a third embodiment of the present invention.

圖1為由水平方向觀看本發明第1實施形態之基板處理裝置1的圖。 FIG. 1 is a view of a substrate processing apparatus 1 according to a first embodiment of the present invention as viewed from a horizontal direction.

基板處理裝置1係對半導體晶圓等圓板狀之基板W，藉由處理液或處理氣體以單片進行處理的單片式裝置。基板處理裝置1係包含：對基板W使用處理液進行處理的處理單元2；與控制基板處理裝置1所具備之裝置之動作或閥之開關的控制裝置(控制單元)3。 The substrate processing apparatus 1 is a monolithic apparatus that processes a wafer-shaped substrate W such as a semiconductor wafer in a single piece using a processing liquid or a processing gas. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W using a processing liquid, and a control device (control unit) 3 that controls the operation of a device included in the substrate processing apparatus 1 or the opening and closing of a valve.

各處理單元2為單片式之單元。各處理單元2係包含：具有內部空間之箱形之腔室4；於腔室4內以水平姿勢保持一片基板W，使基板W於通過基板W中心之鉛直之旋轉軸線A1周圍進行旋轉的旋轉夾具(基板保持單元)5；用於對保持於旋轉夾具5之基板W之上表面供給藥液的藥液供給單元6；用於對保持於旋轉夾具5之基板W之上表面供給沖洗液的沖洗液供給單元(處理液供給單元)7；用於對保持於旋轉夾具5之基板W之上方，供給作為低表面張力液之有機溶劑之一例的IPA之蒸氣、與作為惰性氣體之一例的N2氣體的混合氣體(IPA蒸氣+N2)的氣體供給單元(第1氣體供給單元、第2氣體供給單元)8；與包圍旋轉夾具5之周圍的筒狀之杯9。 Each processing unit 2 is a single-chip unit. Each processing unit 2 includes: a box-shaped chamber 4 having an internal space; a substrate W is held in the chamber 4 in a horizontal posture, and the substrate W is rotated around a vertical rotation axis A1 passing through the center of the substrate W Jig (substrate holding unit) 5; a chemical liquid supply unit 6 for supplying a chemical solution to the upper surface of the substrate W held by the rotary jig 5; Rinsing liquid supply unit (treatment liquid supply unit) 7; for supplying the vapor of IPA, which is an example of an organic solvent with a low surface tension liquid, and N, which is an example of an inert gas, to the substrate W held on the rotary jig 5 A gas supply unit (a first gas supply unit, a second gas supply unit) 8 of a mixed gas of two gases (IPA vapor + N 2 ); and a cylindrical cup 9 surrounding the periphery of the rotating jig 5.

腔室4係包含：收容旋轉夾具5或噴嘴的箱狀之隔壁10；由隔壁10之上部對隔壁10內送入清潔空氣(藉過濾器所過濾的空氣)的作為送風單元的FFU(fa filter unit，風扇過濾單元)11；與由隔壁10下部將腔室4內之氣體排出的排氣管12。FFU11係配置於隔壁10上方，安裝於隔壁10之頂板。FFU11係由隔壁10之頂板對腔室4內朝下送入清潔空氣。排氣管12係連接於杯9底部， 朝基板處理裝置1所設置之工廠中所設有的排氣處理設備導出腔室4內的氣體。從而，藉由FFU11及排氣管12形成於腔室4內朝下方流動的下降流(down flow)。基板W之處理係依於腔室4內形成了下降流的狀態進行。 The chamber 4 includes: a box-shaped partition wall 10 containing a rotary jig 5 or a nozzle; and an FFU (fa filter) as an air supply unit that sends clean air (air filtered by a filter) into the partition wall 10 from above the partition wall 10 unit (fan filter unit) 11; and an exhaust pipe 12 that exhausts the gas in the chamber 4 from the lower part of the partition wall 10. The FFU11 is arranged above the partition wall 10 and is mounted on the top plate of the partition wall 10. FFU11 sends clean air into the chamber 4 from the top plate of the partition wall 10 downward. The exhaust pipe 12 is connected to the bottom of the cup 9, The gas in the chamber 4 is led out to an exhaust processing equipment provided in a factory where the substrate processing apparatus 1 is installed. Therefore, a downflow flowing downward in the chamber 4 is formed by the FFU 11 and the exhaust pipe 12. The processing of the substrate W is performed in a state where a downflow is formed in the chamber 4.

作為旋轉夾具5，係採用於水平方向挾持基板W並水平保持基板W的挾持式夾具。具體而言，旋轉夾具5係包含：旋轉馬達(基板旋轉單元)13；與此旋轉馬達13之驅動軸呈一體化的旋轉軸14；與略水平地安裝於旋轉軸14上端的圓板狀之旋轉基底15。 As the rotation jig 5, a holding type jig that holds the substrate W in a horizontal direction and holds the substrate W horizontally is used. Specifically, the rotating jig 5 includes: a rotating motor (substrate rotating unit) 13; a rotating shaft 14 integrated with a driving shaft of the rotating motor 13; and a disk-shaped one mounted on the upper end of the rotating shaft 14 horizontally. Rotate the substrate 15.

於旋轉基底15之上表面，在其周緣部配置了複數個(3個以上，例如6個)挾持構件16。複數個挾持構件16係於旋轉基底15之上表面周緣部，於對應至基板W外周形狀之圓周上隔著適當間隔而配置。 A plurality of (3 or more, for example, 6) holding members 16 are arranged on the upper surface of the rotating base 15 at the peripheral edge portion. The plurality of holding members 16 are arranged on the peripheral edge portion of the upper surface of the rotating base 15 and are arranged at appropriate intervals on a circumference corresponding to the outer peripheral shape of the substrate W.

又，作為旋轉夾具5，並不侷限於挾持式，例如亦可採用對基板W背面進行真空吸附，藉此依水平姿勢保持基板W，再依此狀態於鉛直之旋轉軸線周圍旋轉，藉此使保持於旋轉夾具5之基板W旋轉的真空吸附式(真空夾具)。 The rotary jig 5 is not limited to the holding type. For example, the back surface of the substrate W may be vacuum-adsorbed, thereby holding the substrate W in a horizontal posture, and then rotating around the vertical axis of rotation in this state. Vacuum suction type (vacuum clamp) held by the substrate W held in the rotary jig 5 for rotation.

藥液供給單元6係包含：吐出藥液之藥液噴嘴17；連接於藥液噴嘴17的藥液配管18；介入裝設於藥液配管18的藥液閥19；於前端安裝了藥液噴嘴17的第1噴嘴臂20；與藉由使第1噴嘴臂20擺動，而使藥液噴嘴17移動的第1噴嘴移動單元21。 The medicinal solution supply unit 6 includes: a medicinal solution nozzle 17 for discharging medicinal solution; a medicinal solution pipe 18 connected to the medicinal solution nozzle 17; a medicinal solution valve 19 installed in the medicinal solution pipe 18; The first nozzle arm 20 of 17 and the first nozzle moving unit 21 that moves the chemical liquid nozzle 17 by swinging the first nozzle arm 20.

若打開藥液閥19，由藥液配管18供給至藥液噴嘴17的藥液係由藥液噴嘴17朝下方吐出。若關閉藥液閥19，使來自藥液噴嘴17之藥液吐出停止。第1噴嘴移動單元21係使藥液噴嘴17沿著基板W上表面移動，藉此使藥液供給位置於基板W上表面內 移動。進而，第1噴嘴移動單元21係於由藥液噴嘴17所吐出之藥液被供給至基板W上表面的處理位置、與俯視下藥液噴嘴17退避至旋轉夾具5側方的退避位置之間，使藥液噴嘴17移動。 When the liquid medicine valve 19 is opened, the liquid medicine supplied from the liquid medicine pipe 18 to the liquid medicine nozzle 17 is discharged downward from the liquid medicine nozzle 17. When the chemical solution valve 19 is closed, the chemical solution from the chemical solution nozzle 17 is stopped. The first nozzle moving unit 21 moves the chemical liquid nozzle 17 along the upper surface of the substrate W, and thereby positions the chemical liquid supply position in the upper surface of the substrate W. mobile. Further, the first nozzle moving unit 21 is located between a processing position where the chemical solution discharged from the chemical solution nozzle 17 is supplied to the upper surface of the substrate W, and a retracted position where the chemical solution nozzle 17 is retracted to the side of the rotary jig 5 in a plan view. To move the chemical liquid nozzle 17.

作為由藥液噴嘴17所吐出的藥液，可例示含有硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH：四甲基銨氫氧化物等)、界面活性劑、防腐蝕劑中之至少1種的液體。 Examples of the chemical solution discharged from the chemical solution nozzle 17 include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (such as citric acid, oxalic acid, etc.), and organic bases (such as TMAH : Tetramethylammonium hydroxide, etc.), a surfactant, and a liquid of at least one of anticorrosive agents.

沖洗液供給單元7係包含：吐出水之沖洗液噴嘴22；連接於沖洗液噴嘴22的沖洗液配管23；介入裝設於沖洗液配管23的沖洗液閥24；於前端安裝了沖洗液噴嘴22的第2噴嘴臂25；與藉由使第2噴嘴臂25擺動，而使沖洗液噴嘴22移動的第2噴嘴移動單元26。 The flushing liquid supply unit 7 includes: a flushing liquid nozzle 22 that discharges water; a flushing liquid pipe 23 connected to the flushing liquid nozzle 22; a flushing liquid valve 24 interposed in the flushing liquid pipe 23; and a flushing liquid nozzle 22 is installed at the front end And a second nozzle moving unit 26 that moves the flushing liquid nozzle 22 by swinging the second nozzle arm 25.

若打開沖洗液閥24，由沖洗液配管23供給至沖洗液噴嘴22的水係由沖洗液噴嘴22朝下方吐出。若關閉沖洗液閥24，使來自沖洗液噴嘴22之水吐出停止。第2噴嘴移動單元26係使沖洗液噴嘴22沿著基板W上表面移動，藉此使水之供給位置於基板W上表面內移動。進而，第2噴嘴移動單元26係於由沖洗液噴嘴22所吐出之水被供給至基板W上表面的處理位置、與俯視下沖洗液噴嘴22退避至旋轉夾具5側方的退避位置之間，使沖洗液噴嘴22移動。 When the flushing liquid valve 24 is opened, the water system supplied from the flushing liquid pipe 23 to the flushing liquid nozzle 22 is discharged downward from the flushing liquid nozzle 22. When the flushing liquid valve 24 is closed, the discharge of water from the flushing liquid nozzle 22 is stopped. The second nozzle moving unit 26 moves the rinse liquid nozzle 22 along the upper surface of the substrate W, thereby moving the water supply position within the upper surface of the substrate W. Further, the second nozzle moving unit 26 is located between a processing position where the water discharged from the rinse liquid nozzle 22 is supplied to the upper surface of the substrate W, and a retreat position where the rinse liquid nozzle 22 retracts to the side of the rotating jig 5 in a plan view, The rinse liquid nozzle 22 is moved.

由沖洗液噴嘴22所吐出之沖洗液，為例如純水(去離子水，Deionzied Water)。水並不限定於純水，亦可為碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如10~100ppm左右)的鹽酸水之任一種。 The rinsing liquid discharged from the rinsing liquid nozzle 22 is, for example, pure water (Deionzied Water). The water is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).

氣體供給單元8係包含：吐出混合氣體(IPA蒸氣+N2)的氣體噴嘴(噴嘴)27；於前端安裝了氣體噴嘴27的第3噴嘴臂28；與藉由使第3噴嘴臂28擺動，而使氣體噴嘴27移動的第3噴嘴移動單元29。 The gas supply unit 8 includes: a gas nozzle (nozzle) 27 that discharges a mixed gas (IPA vapor + N 2 ); a third nozzle arm 28 having a gas nozzle 27 attached to the front end; and the third nozzle arm 28 is swung, The third nozzle moving unit 29 moves the gas nozzle 27.

圖2為擴大表示上述基板處理裝置1所具備之氣體噴嘴27之正吐出混合氣體(IPA蒸氣+N2)之狀態的剖面圖。 FIG. 2 is an enlarged cross-sectional view showing a state where a gas mixture (IPA vapor + N 2 ) is being discharged from a gas nozzle 27 included in the substrate processing apparatus 1.

氣體噴嘴27係具有：內筒(第1筒體)31；與外嵌於內筒31，包圍內筒31的外筒(第2筒體)32。內筒31及外筒32係同軸配置於各自共通的鉛直軸線A2上。如圖3所示，內筒31係除了下端部分31a之外，形成為圓筒狀。於內筒31之下端部分31a，形成有朝水平方向延伸的平坦狀之凸緣33。凸緣33之上表面33b及下表面33c係分別包含水平平坦狀的水平壁。圖2中，凸緣33之外周端33a係描繪成於俯視下與外筒32之外周齊合的狀態，但凸緣33之外周端33a亦可較外筒32更突出至徑方向外部。內筒31之內部空間，係形成來自後述第1氣體配管40之混合氣體(IPA蒸氣+N2)所流通之直線狀的第1氣體流徑34。於第1氣體流徑34之下端，形成第1吐出口35。 The gas nozzle 27 includes an inner tube (first tube body) 31 and an outer tube (second tube body) 32 which is fitted in the inner tube 31 and surrounds the inner tube 31. The inner tube 31 and the outer tube 32 are coaxially arranged on the vertical axis A2 which is common to each of them. As shown in FIG. 3, the inner tube 31 is formed in a cylindrical shape except for the lower end portion 31 a. A flat flange 33 extending in the horizontal direction is formed on the lower end portion 31a of the inner cylinder 31. The upper surface 33b and the lower surface 33c of the flange 33 each include a horizontal flat wall. In FIG. 2, the outer peripheral end 33 a of the flange 33 is depicted as being aligned with the outer periphery of the outer tube 32 in a plan view, but the outer peripheral end 33 a of the flange 33 may protrude to the outside in the radial direction than the outer tube 32. The inner space of the inner cylinder 31 is formed into a linear first gas flow path 34 through which a mixed gas (IPA vapor + N 2 ) from a first gas pipe 40 described later flows. A first outlet 35 is formed at the lower end of the first gas flow path 34.

外筒32包含：圓筒部36；與將圓筒部36上端部閉鎖的閉鎖部37。於內筒31外周與閉鎖部37內周之間，藉由密封構件(未圖示)予以液密封。於內筒31與外筒32之圓筒部36之間，係形成來自後述第2氣體配管42之處理液所流通之圓筒狀的第2氣體流徑38。內筒31及外筒32係分別使用氯乙烯、PCTFE(聚氯三氟乙烯)、PVDF(聚二氟亞乙烯)、PTFE(聚四氟乙烯)、PFA(全氟烷基乙烯醚-四氟乙烯共聚物)等之樹脂材料所形成。 The outer cylinder 32 includes a cylindrical portion 36 and a locking portion 37 that locks an upper end portion of the cylindrical portion 36. Between the outer periphery of the inner tube 31 and the inner periphery of the lock portion 37, a liquid sealing is performed by a sealing member (not shown). A cylindrical second gas flow path 38 is formed between the cylindrical portion 36 of the inner cylinder 31 and the outer cylinder 32 and a processing liquid from a second gas pipe 42 to be described later flows. The inner tube 31 and the outer tube 32 use vinyl chloride, PCTFE (polychlorotrifluoroethylene), PVDF (polydifluoroethylene), PTFE (polytetrafluoroethylene), and PFA (perfluoroalkyl vinyl ether-tetrafluoro) Ethylene copolymer) and other resin materials.

於外筒32之下端部分，係藉由外筒32之下端緣32a與內筒31之凸緣33之外周端33a，區劃出環狀之第2吐出口39。凸緣33之上表面33b由於形成水平平坦面，故混合氣體(IPA蒸氣+N2)在於第2氣體流徑38朝第2吐出口39流動的過程中形成水平方向的流動，藉此，第2吐出口39將在第2氣體流徑38流動的混合氣體(IPA蒸氣+N2)朝水平方向放射狀地吐出。 At the lower end portion of the outer tube 32, a ring-shaped second outlet 39 is defined by the lower end edge 32a of the outer tube 32 and the outer peripheral end 33a of the flange 33 of the inner tube 31. Since the upper surface 33b of the flange 33 forms a horizontal flat surface, the mixed gas (IPA vapor + N 2 ) forms a horizontal flow while the second gas flow path 38 flows toward the second outlet 39. The second discharge port 39 discharges the mixed gas (IPA vapor + N 2 ) flowing in the second gas flow path 38 in a horizontal direction radially.

氣體供給單元8係進一步包含：連接於氣體噴嘴27之第1氣體流徑34的第1氣體配管40；介入裝設於第1氣體配管40的第1氣體閥41；連接於氣體噴嘴27之第2氣體流徑38的第2氣體配管42；與介入裝設於第2氣體配管42的第2氣體閥43。若打開第1氣體閥41，由第1氣體配管40供給至氣體噴嘴27之第1氣體流徑34的混合氣體(IPA蒸氣+N2)係由第1吐出口35朝下方吐出。又，若打開第2氣體閥43，由第2氣體配管42供給至氣體噴嘴27之第2氣體流徑38的混合氣體(IPA蒸氣+N2)係由第2吐出口39朝水平方向放射狀地吐出。 The gas supply unit 8 further includes: a first gas pipe 40 connected to the first gas flow path 34 of the gas nozzle 27; a first gas valve 41 interposed in the first gas pipe 40; and a first gas valve 41 connected to the gas nozzle 27 The second gas piping 42 of the two gas flow path 38 and the second gas valve 43 interposed in the second gas piping 42. When the first gas valve 41 is opened, the mixed gas (IPA vapor + N 2 ) supplied from the first gas pipe 40 to the first gas flow path 34 of the gas nozzle 27 is discharged downward from the first discharge port 35. When the second gas valve 43 is opened, the mixed gas (IPA vapor + N 2 ) supplied from the second gas pipe 42 to the second gas flow path 38 of the gas nozzle 27 is radiated in a horizontal direction from the second outlet 39. Spit it out.

在藉基板處理裝置1對基板W進行處理時，氣體噴嘴27係配置於使凸緣33之下表面33c與基板W上表面隔著既定間隔W1(例如約6mm)而相對向的下方位置。此狀態下，若打開第1氣體閥41，由第1吐出口35所吐出之混合氣體(IPA蒸氣+N2)被吹附至基板W上表面。又，由第1吐出口35所吐出之混合氣體(IPA蒸氣+N2)係於凸緣33之下表面33c與基板W上表面之間的空間SP流通，由形成於凸緣33之外周端33a與基板W間的環狀出口50，放射狀且朝水平方向吐出。 When the substrate W is processed by the substrate processing apparatus 1, the gas nozzle 27 is disposed at a position where the lower surface 33 c of the flange 33 and the upper surface of the substrate W face each other at a predetermined interval W1 (for example, about 6 mm). In this state, when the first gas valve 41 is opened, the mixed gas (IPA vapor + N 2 ) discharged from the first discharge port 35 is blown onto the upper surface of the substrate W. The mixed gas (IPA vapor + N 2 ) discharged from the first discharge port 35 flows through the space SP between the lower surface 33 c of the flange 33 and the upper surface of the substrate W, and is formed at the outer peripheral end of the flange 33. The annular outlet 50 between 33a and the substrate W is radially and horizontally discharged.

控制裝置3係使用例如微電腦所構成。控制裝置3具 有CPU等演算單元、固定記憶體裝置、硬碟驅動器等記憶單元、及輸出輸入單元。記憶單元係記憶了實行演算單元的程式。控制裝置3係依照事先記憶於記憶單元的程式，控制旋轉馬達13、第1噴嘴移動單元21、第2噴嘴移動單元26、第3噴嘴移動單元29等的動作。進而，控制裝置3係依照事先記憶於記憶單元的程式，控制藥液閥19、沖洗液閥24、第1氣體閥41、第2氣體閥43等的開關動作等。 The control device 3 is configured using, for example, a microcomputer. 3 control devices There are calculation units such as a CPU, fixed memory devices, memory units such as a hard disk drive, and input / output units. The memory unit memorizes the program for executing the calculation unit. The control device 3 controls operations of the rotary motor 13, the first nozzle moving unit 21, the second nozzle moving unit 26, the third nozzle moving unit 29, and the like in accordance with a program stored in the memory unit in advance. Further, the control device 3 controls the opening and closing operations of the chemical liquid valve 19, the flushing liquid valve 24, the first gas valve 41, the second gas valve 43 and the like in accordance with a program stored in the memory unit in advance.

圖3為用於說明藉由基板處理裝置1所進行之處理之第1處理例的流程圖。圖4A至4F為用於說明第1處理例的圖解性圖。圖5為表示處理時間、與來自第1吐出口35及第2吐出口39的混合氣體(IPA蒸氣+N2)吐出流量間之關係的圖。圖6A、6B為表示擴大液膜去除區域45時，沖洗液之液膜的邊界部分47的狀態的俯視圖。 FIG. 3 is a flowchart for explaining a first processing example of processing performed by the substrate processing apparatus 1. 4A to 4F are diagrams for explaining a first processing example. FIG. 5 is a graph showing the relationship between the processing time and the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first discharge outlet 35 and the second discharge outlet 39. 6A and 6B are plan views showing the state of the boundary portion 47 of the liquid film of the rinsing liquid when the liquid film removal region 45 is enlarged.

參照圖1至圖3說明第1處理例。並適當參照圖4A至4F、圖5及圖6A、6B。第1處理例係使用藥液，對基板W上表面進行洗淨處理的處理例。 A first processing example will be described with reference to FIGS. 1 to 3. 4A to 4F, FIG. 5 and FIGS. 6A and 6B. The first processing example is a processing example in which the upper surface of the substrate W is cleaned using a chemical solution.

在藉由基板處理裝置1對基板W施行處理時，係將未處理之基板W搬入至腔室4內(步驟S1)。具體而言，控制裝置3係以使噴嘴17、22、27等之腔室4內的構成由旋轉夾具5上方形成退避的狀態，藉搬送機器人(未圖示)將基板W搬入至腔室4內。然後，控制裝置3係依基板W之處理對象面(例如圖案形成面)朝上的狀態，由搬送機器人將基板W載置於旋轉夾具5上(基板保持步驟)。其後，控制裝置3係依基板W保持於旋轉夾具5之狀態使旋轉馬達13旋轉。藉此，基板W之旋轉開始(步驟S2)。控制裝置3 係在將基板W載置於旋轉夾具5上後，使搬送機器人從腔室4退避。 When the substrate W is processed by the substrate processing apparatus 1, the unprocessed substrate W is carried into the chamber 4 (step S1). Specifically, the control device 3 moves the substrate W into the chamber 4 by a transfer robot (not shown) in a state where the configuration in the chamber 4 such as the nozzles 17, 22, 27, and the like is retracted from above the rotary jig 5. Inside. Then, the control device 3 places the substrate W on the rotating jig 5 by the transfer robot in a state where the processing target surface (for example, the pattern forming surface) of the substrate W faces upward (the substrate holding step). Thereafter, the control device 3 rotates the rotary motor 13 in a state where the substrate W is held in the rotary jig 5. Thereby, the rotation of the substrate W is started (step S2). Control device 3 After the substrate W is placed on the rotating jig 5, the transfer robot is retracted from the chamber 4.

接著，進行對基板W供給藥液的藥液步驟(步驟S3)。具體而言，控制裝置3係藉由控制第1噴嘴移動單元21，使藥液噴嘴17由退避位置移動至處理位置。其後，控制裝置3打開藥液閥19，朝旋轉狀態之基板W上表面由藥液噴嘴17吐出藥液。由藥液噴嘴17所吐出之藥液，係在供給至基板W上表面後，因離心力而沿著基板W上表面朝外部流動。進而控制裝置3係依基板W旋轉的狀態，使對基板W上表面之藥液供給位置於中央部與周緣部之間移動。藉此，藥液供給位置掃描(scan)基板W上表面全區域，對基板W上表面全區域均勻地進行處理。在經過預定之時間時，控制裝置3係關閉藥液閥19，使由藥液噴嘴17之藥液吐出停止，其後，藉由控制第2噴嘴移動單元26，使藥液噴嘴17由旋轉夾具5之上方退避。藉由藥液步驟(S3)，由搬入至腔室4之基板W上表面去除顆粒。 Next, a chemical solution step of supplying a chemical solution to the substrate W is performed (step S3). Specifically, the control device 3 controls the first nozzle moving unit 21 to move the chemical liquid nozzle 17 from the retreated position to the processing position. After that, the control device 3 opens the chemical liquid valve 19 and discharges the chemical liquid from the chemical liquid nozzle 17 toward the upper surface of the substrate W in the rotating state. The chemical solution discharged from the chemical solution nozzle 17 is supplied to the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W due to centrifugal force. Further, the control device 3 moves the position where the chemical solution is supplied to the upper surface of the substrate W between the central portion and the peripheral portion in a state where the substrate W is rotated. Thereby, the entire area of the upper surface of the substrate W is scanned by the chemical solution supply position, and the entire area of the upper surface of the substrate W is processed uniformly. When a predetermined time has elapsed, the control device 3 closes the liquid medicine valve 19 to stop the discharge of the liquid medicine from the liquid medicine nozzle 17, and thereafter, by controlling the second nozzle moving unit 26, the liquid medicine nozzle 17 is rotated by the jig. Retreat above 5. In the chemical solution step (S3), particles are removed from the upper surface of the substrate W carried into the chamber 4.

於藥液步驟(S3)中，亦可施行物理洗淨。作為此物理洗淨，可例示將來自所謂二流體噴嘴之藥液之微小液滴的噴流，供給至基板W上表面的液滴吐出洗淨；或一邊對基板W表面供給藥液，一邊使洗刷等之刷接觸該基板W表面，藉此洗淨該表面的刷洗淨。 In the medicinal solution step (S3), physical washing can also be performed. As this physical cleaning, for example, a jet of minute liquid droplets of a chemical liquid from a so-called two-fluid nozzle is ejected and cleaned from the liquid droplets supplied to the upper surface of the substrate W; or the chemical liquid is supplied to the surface of the substrate W while being scrubbed Wait until the brush contacts the surface of the substrate W, thereby washing the surface with a brush.

接著，進行對基板W供給沖洗液的沖洗步驟(步驟S4)。具體而言，控制裝置3係藉由控制第2噴嘴移動單元26，使沖洗液噴嘴22由退避位置移動至處理位置。其後，控制裝置3打開沖洗液閥24，朝旋轉狀態之基板W上表面由沖洗液噴嘴22吐出 水。與由藥液噴嘴17所吐出之藥液同樣地，由沖洗液噴嘴22所吐出之沖洗液係在著液至基板W上表面後，因離心力而沿著基板W上表面朝外部流動。因此，基板W上之藥液被沖洗液推流至外部，由基板W周圍排出。藉此，基板W上之藥液被沖洗液所沖除。進而，控制裝置3係依基板W旋轉的狀態，使對基板W上表面之沖洗液供給位置於中央部與周緣部之間移動。藉此，沖洗液供給位置掃描基板W上表面全區域，對基板W上表面全區域均勻地進行處理。於沖洗液中，係含有自基板W上表面被去除的顆粒。 Next, a washing step of supplying a washing liquid to the substrate W is performed (step S4). Specifically, the control device 3 controls the second nozzle moving unit 26 to move the flushing liquid nozzle 22 from the retracted position to the processing position. After that, the control device 3 opens the flushing liquid valve 24 and ejects the flushing liquid nozzle 22 toward the upper surface of the substrate W in the rotating state. water. Similarly to the chemical solution discharged from the chemical solution nozzle 17, the cleaning solution discharged from the cleaning solution nozzle 22 is deposited on the upper surface of the substrate W and then flows along the upper surface of the substrate W to the outside due to centrifugal force. Therefore, the chemical solution on the substrate W is pushed to the outside by the rinsing liquid, and is discharged from the periphery of the substrate W. Thereby, the chemical solution on the substrate W is washed away by the rinsing solution. Further, the control device 3 moves the rinse liquid supply position to the upper surface of the substrate W between the central portion and the peripheral portion in a state where the substrate W is rotated. Thereby, the entire area of the upper surface of the substrate W is scanned by the rinse liquid supply position, and the entire area of the upper surface of the substrate W is processed uniformly. The rinse liquid contains particles removed from the upper surface of the substrate W.

接著，進行以停止對基板W供給沖洗液之狀態，將沖洗液之液膜(處理液之液膜)44保持於基板W上的積滯沖洗(paddle rinse)步驟(步驟S5)。具體而言，控制裝置3係藉由控制旋轉夾具5，以基板W上表面全區域被沖洗液被覆的狀態，停止基板W旋轉；或者使基板W之旋轉速度降低為較沖洗步驟(S4)之旋轉速度更低速的低旋轉速度(例如約10~100rpm)(圖4A中表示以約50rpm低速旋轉的狀態)。藉此，於基板W上表面形成被覆基板W上表面全區域的積滯狀的沖洗液之液膜44。於此狀態下，作用於基板W上表面之沖洗液之液膜44的離心力小於在沖洗液與基板W上表面之間所作用的表面張力，或上述離心力與上述表面張力呈幾乎拮抗。由於基板W之減速，作用於基板W上之沖洗液的離心力變弱，由基板W上排出之沖洗液的量減少。於沖洗液之液膜44中有時含有顆粒。 Next, a step of paddle rinsing (holding the liquid film (the liquid film of the processing liquid) 44 of the rinsing liquid) on the substrate W in a state where the supply of the rinsing liquid to the substrate W is stopped (step S5). Specifically, the control device 3 stops the rotation of the substrate W in a state where the entire area of the upper surface of the substrate W is covered with the washing liquid by controlling the rotating jig 5; or reduces the rotation speed of the substrate W to be lower than that of the washing step (S4). The rotation speed is a low rotation speed at a lower speed (for example, about 10 to 100 rpm) (a state of rotating at a low speed of about 50 rpm is shown in FIG. 4A). As a result, a liquid film 44 covering the entire area of the upper surface of the substrate W is formed on the upper surface of the substrate W. In this state, the centrifugal force of the liquid film 44 of the washing liquid on the upper surface of the substrate W is smaller than the surface tension acting between the washing liquid and the upper surface of the substrate W, or the centrifugal force and the surface tension are almost antagonized. Due to the deceleration of the substrate W, the centrifugal force of the rinse liquid acting on the substrate W becomes weak, and the amount of the rinse liquid discharged from the substrate W decreases. Particles may be contained in the liquid film 44 of the rinse liquid.

控制裝置3係在基板W為靜止之狀態或基板W以低旋轉速度進行旋轉之狀態，關閉沖洗液閥24，使來自沖洗液噴嘴22之沖洗液吐出停止。又，在基板W上表面形成積滯狀之沖洗液 之液膜44後，亦可進行沖洗液對基板W上表面的供給。 The control device 3 closes the flushing liquid valve 24 to stop the flushing liquid from the flushing liquid nozzle 22 when the substrate W is stationary or the substrate W is rotating at a low rotational speed. In addition, a stagnant washing liquid is formed on the upper surface of the substrate W. After the liquid film 44, the rinse liquid may be supplied to the upper surface of the substrate W.

接著，控制裝置3進行乾燥步驟(步驟S6)。 Next, the control device 3 performs a drying step (step S6).

具體而言，控制裝置3係控制第3噴嘴移動單元29，使氣體噴嘴27由退避位置移動至中央位置。在將氣體噴嘴27配置於中央位置後，自氣體噴嘴27進行混合氣體(IPA蒸氣+N2)的吐出。 Specifically, the control device 3 controls the third nozzle moving unit 29 to move the gas nozzle 27 from the retracted position to the center position. After the gas nozzle 27 is arranged at the center position, the mixed gas (IPA vapor + N 2 ) is discharged from the gas nozzle 27.

具體而言，首先，控制裝置3打開第2氣體閥43，如圖4B所示，由氣體噴嘴27之第2吐出口39將混合氣體(IPA蒸氣+N2)放射狀地朝水平方向吐出。藉此，於基板W上之沖洗液之液膜44的中央部之周圍供給混合氣體(IPA蒸氣+N2)，該中央部之周圍成為富含IPA蒸氣的狀態。 Specifically, first, the control device 3 opens the second gas valve 43 and, as shown in FIG. 4B, the mixed gas (IPA vapor + N 2 ) is radially discharged from the second outlet 39 of the gas nozzle 27 in a horizontal direction. Thereby, a mixed gas (IPA vapor + N 2 ) is supplied around the central portion of the liquid film 44 of the rinsing liquid on the substrate W, and the periphery of the central portion becomes a state rich in IPA vapor.

控制裝置3係如圖5所示，在混合氣體(IPA蒸氣+N2)之吐出開始後，使來自第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出流量逐漸增大。圖5中，混合氣體(IPA蒸氣+N2)之吐出流量係與時間經過成比例地增大，但若隨時間經過而增大，則不與時間經過成比例亦可。 As shown in FIG. 5, the control device 3 increases the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the second outlet 39 after the discharge of the mixed gas (IPA vapor + N 2 ) starts. In FIG. 5, the discharge flow rate of the mixed gas (IPA vapor + N 2 ) increases in proportion to the passage of time, but if it increases with the passage of time, it may not be proportional to the passage of time.

在由第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出開始經過預定期間時，接著，控制裝置3打開第1氣體閥41，由氣體噴嘴27之第1吐出口35將混合氣體(IPA蒸氣+N2)朝下吐出，如圖4C所示，於基板W上表面之沖洗液之液膜44之中央部吹附混合氣體(IPA蒸氣+N2)。藉此，位於沖洗液之液膜44中央部的沖洗液被吹附壓力(氣壓)物理性地推展，由基板W上表面之中央部被吹散去除。其結果，於基板W上表面中央部形成液膜去除區域45。 When the discharge of the mixed gas (IPA vapor + N 2 ) from the second discharge port 39 has started for a predetermined period of time, the control device 3 then opens the first gas valve 41 and the mixed gas is discharged from the first discharge port 35 of the gas nozzle 27 (IPA vapor + N 2 ) is discharged downward, and as shown in FIG. 4C, a mixed gas (IPA vapor + N 2 ) is blown into the central portion of the liquid film 44 of the rinse liquid on the upper surface of the substrate W. Thereby, the rinsing liquid located at the center portion of the liquid film 44 of the rinsing liquid is physically pushed by the blowing pressure (air pressure), and is removed by being blown away from the center portion of the upper surface of the substrate W. As a result, a liquid film removal region 45 is formed in the center portion of the upper surface of the substrate W.

由第1吐出口35所吐出之混合氣體(IPA蒸氣+N2)，係於基板W上表面與凸緣33之下表面33c之間的空間SP流通， 由在凸緣33之外周端33a與基板W之間所形成的環狀出口50，放射狀且朝水平方向吐出。從而，在形成液膜去除區域45後，來自環狀出口50之混合氣體(IPA蒸氣+N2)係沿著基板W上表面朝周方向外部放射狀地流動。 The mixed gas (IPA vapor + N 2 ) discharged from the first outlet 35 is circulated in the space SP between the upper surface of the substrate W and the lower surface 33c of the flange 33, and the peripheral end 33a outside the flange 33 and The annular outlets 50 formed between the substrates W are radially and horizontally discharged. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA vapor + N 2 ) from the annular outlet 50 flows radially outward along the upper surface of the substrate W in the circumferential direction.

控制裝置3係如圖5所示，由混合氣體(IPA蒸氣+N2)之吐出開始後起，使來自第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出流量逐漸增大。圖5中，混合氣體(IPA蒸氣+N2)之吐出流量雖與時間經過成比例地增大，但若隨時間經過而增大，則不與時間經過成比例亦可。 As shown in FIG. 5, the control device 3 gradually increases the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first outlet 35 after the discharge of the mixed gas (IPA vapor + N 2 ) is started. In FIG. 5, although the discharge flow rate of the mixed gas (IPA vapor + N 2 ) increases in proportion to the passage of time, if it increases with the passage of time, it may not be proportional to the passage of time.

又，在來自第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出開始後，控制裝置3係控制旋轉馬達13，使基板W之旋轉速度由零或低旋轉速度逐漸增大。若基板W之旋轉速度超過既定速度，則對基板W上之沖洗液之液膜44作用因基板W旋轉所造成的離心力。又，隨著基板W之旋轉速度上升，該離心力增大。隨著混合氣體(IPA蒸氣+N2)之吐出流量增大及基板W之旋轉高速化，如圖4D所示，液膜去除區域45係擴大。基板W之旋轉加速亦可不在由第1吐出口35開始吐出混合氣體(IPA蒸氣+N2)後進行，而是與由第1吐出口35開始吐出混合氣體(IPA蒸氣+N2)之同時開始。 After the discharge of the mixed gas (IPA vapor + N 2 ) from the first discharge port 35 is started, the control device 3 controls the rotary motor 13 to gradually increase the rotation speed of the substrate W from zero or a low rotation speed. If the rotation speed of the substrate W exceeds a predetermined speed, a centrifugal force caused by the rotation of the substrate W is applied to the liquid film 44 of the washing liquid on the substrate W. As the rotation speed of the substrate W increases, the centrifugal force increases. As the discharge flow rate of the mixed gas (IPA vapor + N 2 ) increases and the rotation speed of the substrate W increases, as shown in FIG. 4D, the liquid film removal area 45 is enlarged. The rotation acceleration of the substrate W may not be performed after the mixed gas (IPA vapor + N 2 ) is started to be discharged from the first outlet 35, but at the same time as the mixed gas (IPA vapor + N 2 ) is started from the first outlet 35. Start.

由於液膜去除區域45之擴大，基板上表面與沖洗液之液膜與氣相間之邊界(含有氣液固之三層界面的邊界)46朝基板W外部移動。基於下述2個理由，不論液膜去除區域45之擴大狀況，均可將邊界46之周圍環境持續保持為富含IPA蒸氣的狀態。 Due to the expansion of the liquid film removal area 45, the boundary between the upper surface of the substrate and the liquid film and the gas phase of the rinsing liquid (the boundary containing the three-layer interface of gas-liquid-solid) 46 moves toward the outside of the substrate W. For the following two reasons, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained in a state rich in IPA vapor.

第1理由在於，由於使來自第2吐出口39之混合氣 體(IPA蒸氣+N2)的吐出流量，在該吐出開始後逐漸增大，故由第2吐出口39放射狀地吐出的混合氣體(IPA蒸氣+N2)係經常地供給至邊界46周圍。 The first reason is that since the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the second outlet 39 is gradually increased after the start of the discharge, the mixed gas discharged radially from the second outlet 39 (IPA vapor + N 2 ) is constantly supplied around the boundary 46.

第2理由係如下述。亦即，由於第2吐出口39配置於較第1吐出口35更上方，故藉由自第2吐出口39所吐出之混合氣體(IPA蒸氣+N2)的氣流48(參照圖2)，將邊界46的周圍由較第2吐出口39更上方之區域予以遮斷。此外，藉由來自第1吐出口35之混合氣體(IPA蒸氣+N2)自環狀出口50依放射狀且朝水平方向吐出、沿著基板W上表面使混合氣體(IPA蒸氣+N2)朝周方向外部流動、而來自第2吐出口39之混合氣體(IPA蒸氣+N2)的氣流48(參照圖2)，使來自第1吐出口35之混合氣體(IPA蒸氣+N2)被持續保留於基板W上表面附近。 The second reason is as follows. That is, since the second discharge port 39 is disposed above the first discharge port 35, the gas flow 48 (see FIG. 2) of the mixed gas (IPA vapor + N 2 ) discharged from the second discharge port 39, The periphery of the boundary 46 is blocked by a region above the second outlet 39. Furthermore, by the mixed gas (IPA vapor + N 2) a first outlet port 35 from the outlet 50 from the annular discharge and the horizontal direction by the radial surface of the mixed gas (IPA vapor + N 2) along the substrate W in the circumferential direction of the external flow, the gas stream from a mixed gas of the second discharge port 39 of the (IPA vapor + N 2) 48 (see FIG. 2), so that from the mixed gas of the first discharge port 35 of the (IPA vapor + N 2) is It remains near the upper surface of the substrate W.

邊界46周圍之環境若為富含具有較沖洗液低之表面張力之IPA之蒸氣的狀態，如圖2所示，沖洗液之液膜44中，在邊界46附近之部分(稱為「沖洗液之液膜的邊界部分47」)的內部不發生熱對流，此外，於沖洗液之液膜的邊界部分47的內部，產生朝向邊界遠離之方向(亦即與熱對流反向)流動的馬蘭哥尼對流49。於液膜去除區域45之形成後，不論液膜去除區域45之擴大狀況，均可將邊界46之周圍環境持續保持為富含IPA之蒸氣的狀態。 If the environment around the boundary 46 is in a state rich in IPA vapor with a lower surface tension than the rinsing liquid, as shown in FIG. 2, in the liquid film 44 of the rinsing liquid, a portion near the boundary 46 (referred to as “the rinsing liquid Thermal convection does not occur in the boundary portion 47 ″) of the liquid film, and Marango flows in the direction away from the boundary (that is, opposite to the thermal convection) in the boundary portion 47 of the liquid film of the washing liquid. Nepal Convection 49. After the formation of the liquid film removal region 45, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained in a state of being rich in IPA vapor.

圖6A及6B為表示擴大液膜去除區域45時，沖洗液之液膜的邊界部分47的狀態的俯視圖。 6A and 6B are plan views showing the state of the boundary portion 47 of the liquid film of the rinsing liquid when the liquid film removal region 45 is enlarged.

如圖6A所示，在沖洗液之液膜44所含之顆粒P存在於沖洗液之液膜的邊界部分47的情況，此顆粒P被馬蘭哥尼對流49朝邊界46遠離的方向促進。因此，隨著液膜去除區域45之 擴大而使邊界46朝基板W外部移動時，如圖6B所示，顆粒P亦一併地朝徑方向外部移動。因此，於顆粒P被攝入於沖洗液之液膜的邊界部分47之狀態，液膜去除區域45將擴大。 As shown in FIG. 6A, in the case where the particles P contained in the liquid film 44 of the washing liquid are present at the boundary portion 47 of the liquid film of the washing liquid, the particles P are promoted by the Marangoni convection 49 in a direction away from the boundary 46. Therefore, as the liquid film removal area 45 When the boundary 46 is enlarged and moved outside the substrate W, as shown in FIG. 6B, the particles P also move outward in the radial direction together. Therefore, in a state where the particles P are taken into the boundary portion 47 of the liquid film of the rinsing liquid, the liquid film removal area 45 is enlarged.

然後，液膜去除區域45擴大至基板W全區域，沖洗液之液膜44自基板W上表面被完全排出(圖4F所示狀態)，藉此，使基板W上表面之全區域乾燥。沖洗液之液膜44中含有之顆粒不致出現於液膜去除區域45，與沖洗液之液膜44一起自基板W上表面被去除。 Then, the liquid film removal area 45 is expanded to the entire area of the substrate W, and the liquid film 44 of the washing liquid is completely discharged from the upper surface of the substrate W (the state shown in FIG. 4F), thereby drying the entire area of the upper surface of the substrate W. The particles contained in the liquid film 44 of the washing liquid do not appear in the liquid film removing area 45, and are removed from the upper surface of the substrate W together with the liquid film 44 of the washing liquid.

在液膜去除區域45擴大為基板W之上表面之全區域後，控制裝置3係關閉第1氣體閥41及第2氣體閥43，使來自氣體噴嘴27之混合氣體(IPA蒸氣+N2)的吐出停止。其後，控制裝置3藉由控制第3噴嘴移動單元29，使氣體噴嘴27退避至旋轉夾具5上方。又，控制裝置3係控制旋轉馬達13，使旋轉夾具5之旋轉(基板W之旋轉)停止(步驟S7)。 After the liquid film removal area 45 is enlarged to the entire area on the upper surface of the substrate W, the control device 3 closes the first gas valve 41 and the second gas valve 43 to make the mixed gas (IPA vapor + N 2 ) from the gas nozzle 27 Spitting stopped. After that, the control device 3 controls the third nozzle moving unit 29 to retract the gas nozzle 27 above the rotary jig 5. The control device 3 controls the rotary motor 13 to stop the rotation of the rotary jig 5 (the rotation of the substrate W) (step S7).

藉此，結束對一片基板W的處理，控制裝置3係與搬入基板W時同樣地，藉由搬送機器人將處理完畢之基板W由腔室4內搬出(步驟S8)。 Thereby, the processing of one substrate W is ended, and the control device 3 carries out the processed substrate W from the chamber 4 by the transfer robot in the same manner as when the substrate W is carried in (step S8).

根據以上之實施形態，藉由對形成於基板W上表面之沖洗液之液膜44，將混合氣體(IPA蒸氣+N2)由上方吹附至基板W上表面，而於沖洗液之液膜44形成液膜去除區域45。藉由液膜去除區域45之擴大，邊界46朝基板W外部移動。使液膜去除區域45擴大至基板W之全區域，藉此使基板W之上表面全區域乾燥。 According to the above embodiment, the mixed film (IPA vapor + N 2 ) is blown onto the upper surface of the substrate W from the liquid film 44 of the rinse liquid formed on the upper surface of the substrate W, and the liquid film of the rinse liquid is blown from above. 44 forms a liquid film removal area 45. With the expansion of the liquid film removal region 45, the boundary 46 moves toward the outside of the substrate W. The liquid film removal area 45 is enlarged to the entire area of the substrate W, thereby drying the entire area of the upper surface of the substrate W.

又，混合氣體(IPA蒸氣+N2)係由環狀之第2吐出口39朝水平方向且放射狀地吐出。由第2吐出口39所吐出之混合氣 體(IPA蒸氣+N2)，係供給至形成於基板W上表面之沖洗液之液膜44的周圍。從而，可將沖洗液之液膜44之上表面附近的環境保持為富含IPA之蒸氣的狀態。因此，在液膜去除區域45的形成後，可將邊界46的周圍環境保持為富含IPA之蒸氣的狀態。藉此，於沖洗液之液膜的邊界部分47的內部可產生朝向邊界46遠離之方向流動的馬蘭哥尼對流49，且可維持所產生的馬蘭哥尼對流49。 The mixed gas (IPA vapor + N 2 ) is discharged horizontally and radially from the annular second discharge port 39. The mixed gas (IPA vapor + N 2 ) discharged from the second discharge port 39 is supplied around the liquid film 44 of the rinse liquid formed on the upper surface of the substrate W. Therefore, the environment near the upper surface of the liquid film 44 of the rinsing liquid can be maintained in a state of being rich in IPA vapor. Therefore, after the formation of the liquid film removal region 45, the surrounding environment of the boundary 46 can be maintained in a state of being rich in IPA vapor. Thereby, a Marangoni convection 49 flowing in a direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the washing liquid, and the generated Marangoni convection 49 can be maintained.

從而，在沖洗液之液膜44中含有顆粒的情況，此顆粒被馬蘭哥尼對流49朝邊界46遠離的方向促進。在液膜去除區域45擴大時，邊界46之周圍環境持續保持為富含IPA之蒸氣的狀態。因此，可依沖洗液之液膜44中之顆粒攝入於沖洗液之液膜的邊界部分47中的狀態，擴大液膜去除區域45。因此，沖洗液之液膜44中所含的顆粒，不致出現於液膜去除區域45，而與沖洗液之液膜44一起自基板W上表面被去除。因此，在基板W乾燥後，基板W上表面不殘存顆粒。藉此，可於抑制或防止顆粒發生及水痕發生的雙方之下，使基板W上表面全區域乾燥。 Thus, in the case where particles are contained in the liquid film 44 of the rinsing liquid, the particles are promoted by the Marangoni convection 49 away from the boundary 46. When the liquid film removal region 45 is enlarged, the surrounding environment of the boundary 46 is continuously maintained in a state of being rich in IPA vapor. Therefore, the liquid film removal area 45 can be enlarged depending on the state where the particles in the liquid film 44 of the rinsing liquid are taken into the boundary portion 47 of the liquid film of the rinsing liquid. Therefore, particles contained in the liquid film 44 of the rinsing liquid do not appear in the liquid film removal area 45, but are removed from the upper surface of the substrate W together with the liquid film 44 of the rinsing liquid. Therefore, after the substrate W is dried, no particles remain on the upper surface of the substrate W. Thereby, the entire area of the upper surface of the substrate W can be dried while suppressing or preventing the occurrence of particles and the occurrence of water marks.

另外，由於在由第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出開始前，先開始由第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出，故可依基板W上表面附近之環境為富含IPA之蒸氣的狀態，開始液膜去除區域45之形成。藉此，由液膜去除區域45之形成開始時起，可於沖洗液之液膜的邊界部分47的內部，產生朝向邊界46遠離之方向流動的馬蘭哥尼對流49。 Further, since before the start of the first mixed gas outlet 35 of the discharge (IPA vapor + N 2) discharge, a mixed gas before the start of the discharge outlet 39 (IPA vapor + N 2) is discharged by the second, so to follow the substrate The environment near the upper surface of W is in a state of the vapor rich in IPA, and the formation of the liquid film removal region 45 is started. Thereby, from the beginning of the formation of the liquid film removal area 45, a Marangoni convection 49 flowing in a direction away from the boundary 46 can be generated inside the boundary portion 47 of the liquid film of the washing liquid.

又，由於第2吐出口39配置於較第1吐出口35更上方，故亦具有藉由自第2吐出口39所吐出之混合氣體(IPA蒸氣+N2)之氣流將邊界46的周圍由較第2吐出口39更上方之區域予以遮斷 的作用。藉此，可將邊界46周圍之環境保持為更富含IPA之蒸氣的狀態。 Further, since the second discharge outlet 39 arranged in the first discharge port 35 than a more upward, hence with a mixed gas (IPA vapor + N 2) of the discharge outlet 39 of the second gas stream from the periphery by the boundary 46 by The area above the second outlet 39 is blocked. Thereby, the environment around the boundary 46 can be maintained in a state of being richer in IPA vapor.

又，由第1吐出口35所吐出之混合氣體(IPA蒸氣+N2)，係於基板W上表面與凸緣33之間的空間SP流通，由在凸緣33之外周端33a與基板W之間所形成的環狀出口50，以放射狀且朝水平方向吐出。從而，在形成液膜去除區域45後，混合氣體(IPA蒸氣+N2)係沿著基板W上表面朝周方向外部放射狀地流動。藉此，可將邊界46周圍之環境保持為更加富含IPA之蒸氣的狀態。 In addition, the mixed gas (IPA vapor + N 2 ) discharged from the first discharge port 35 flows through the space SP between the upper surface of the substrate W and the flange 33, and flows from the peripheral end 33 a outside the flange 33 to the substrate W. The annular outlet 50 formed therebetween is radially and horizontally discharged. Therefore, after the liquid film removal region 45 is formed, the mixed gas (IPA vapor + N 2 ) flows radially outward along the upper surface of the substrate W in the circumferential direction. Thereby, the environment around the boundary 46 can be maintained as a state richer in IPA vapor.

又，由於使來自第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出流量在該吐出開始後逐漸增大，故不論液膜去除區域45之擴大狀況，均可將邊界46的周圍環境持續保持為富含IPA之蒸氣的狀態。 In addition, since the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the second discharge port 39 is gradually increased after the start of the discharge, the periphery of the boundary 46 can be expanded regardless of the expansion of the liquid film removal region 45. The environment continues to be in a state of vapor rich in IPA.

又，亦可考慮例如將腔室4內部的全區域，以IPA之蒸氣充滿大氣，並對沖洗液之液膜44吹附IPA之蒸氣。然而，此情況下，由於必須將腔室4內部之全區域以IPA之蒸氣充滿大氣，故IPA之消費量大增。 It is also conceivable that, for example, the entire area inside the chamber 4 is filled with IPA vapor to the atmosphere, and IPA vapor is blown onto the liquid film 44 of the washing solution. However, in this case, since it is necessary to fill the entire area inside the chamber 4 with IPA vapor, the consumption of IPA increases greatly.

相對於此，本實施形態係藉由第2吐出口39朝水平方向且放射狀地吐出混合氣體(IPA蒸氣+N2)，可將邊界46的周圍環境保持為富含IPA之蒸氣的狀態。藉此，可達到IPA之省液化，並可使基板W上表面良好地乾燥。 On the other hand, in the present embodiment, the mixed gas (IPA vapor + N 2 ) is horizontally and radially discharged from the second discharge port 39, so that the surrounding environment of the boundary 46 can be maintained in a state of being rich in IPA vapor. Thereby, the liquefaction of IPA can be achieved, and the upper surface of the substrate W can be dried well.

圖7為用於說明藉由基板處理裝置1所進行之處理之第2處理例的圖解性圖。 FIG. 7 is a schematic diagram for explaining a second processing example of processing performed by the substrate processing apparatus 1.

第2處理例中，與圖3至4F所示第1處理例相異的點在於：於乾燥步驟(S6)中，在來自第1吐出口35之混合氣體(IPA 蒸氣+N2)對基板W上表面的吹附開始後(亦即，液膜去除區域45形成後)，將基板W上表面之混合氣體(IPA蒸氣+N2)的吹附位置，由基板W之上表面中央部移動至上表面周緣部，藉此擴大液膜去除區域45。除了此點以外，第2處理例均與第1處理例共通。 The second processing example is different from the first processing example shown in FIGS. 3 to 4F in that, in the drying step (S6), a mixed gas (IPA vapor + N 2 ) from the first outlet 35 is applied to the substrate. W after the start of spraying the surface (i.e., region 45 is formed after the film is removed), a mixed gas of the upper surface of the substrate W (the vapor of IPA + N 2) is blown position, moving the central portion on the surface of the substrate W The liquid film removal area 45 is extended to the peripheral edge portion of the upper surface. Except for this point, the second processing example is common to the first processing example.

具體而言，控制裝置3係在液膜去除區域45形成後，一邊繼續進行由氣體噴嘴27之第1吐出口35的混合氣體(IPA蒸氣+N2)吹附，一邊控制第3噴嘴移動單元29，將氣體噴嘴27由基板W之上表面中央部朝徑方向外部水平地移動至上表面周緣部的上方。藉此，擴大液膜去除區域45。 Specifically, the control device 3 controls the third nozzle moving unit while continuing to blow the mixed gas (IPA vapor + N 2 ) from the first outlet 35 of the gas nozzle 27 after the liquid film removal area 45 is formed. 29. The gas nozzle 27 is horizontally moved from the central portion of the upper surface of the substrate W to the outside in the radial direction to above the peripheral portion of the upper surface. Thereby, the liquid film removal area 45 is enlarged.

此第2處理例中，可藉由使自第1吐出口35之混合氣體(IPA蒸氣+N2)的吹附位置朝徑方向外部移動，而實現液膜去除區域45的擴大。因此，由第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出流量，可於吐出開始後保持為一定流量。又，基板W之旋轉速度亦可維持為零或低旋轉速度(圖7中表示依50rpm旋轉的情形)。 In this second processing example, the spraying position of the mixed gas (IPA vapor + N 2 ) from the first discharge port 35 can be moved outward in the radial direction, so that the liquid film removal region 45 can be enlarged. Therefore, the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first discharge port 35 can be maintained at a constant flow rate after the start of the discharge. In addition, the rotation speed of the substrate W can be maintained at zero or a low rotation speed (shown in FIG. 7 when it is rotated at 50 rpm).

又，由第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出流量，係於吐出開始後保持為一定流量。 The discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the second discharge port 39 is maintained at a constant flow rate after the start of discharge.

由於液膜去除區域45之擴大而邊界46朝基板W外部移動。由於邊界46係追隨由第1吐出口35之混合氣體之吹附位置移動而移動，故換言之，邊界46係追隨氣體噴嘴27之移動而移動。因此，不論液膜去除區域45之擴大狀況，可將由第2吐出口39所放射狀地吐出之混合氣體(IPA蒸氣+N2)經常地供給至邊界46周圍。藉此，不論液膜去除區域45之擴大狀況，可將邊界46之周圍環境持續保持為富含IPA之蒸氣的狀態。 Due to the expansion of the liquid film removal area 45, the boundary 46 moves toward the outside of the substrate W. The boundary 46 moves in accordance with the movement of the blowing position of the mixed gas from the first outlet 35, in other words, the boundary 46 moves in accordance with the movement of the gas nozzle 27. Thus, regardless of the enlarged region 45 of the film removal conditions, can be mixed by the second jetting of gas discharging outlet 39 radially (IPA vapor + N 2) supplied to regularly around the boundary 46. Thereby, regardless of the enlarged state of the liquid film removal region 45, the surrounding environment of the boundary 46 can be continuously maintained as a state rich in IPA vapor.

由以上所述，第2處理例係發揮與第1處理例所說明之作用效果同等的作用效果。 As described above, the second processing example exhibits the same operational effects as those described in the first processing example.

又，第2處理例中，亦可如第1處理例般，使自第2吐出口39之混合氣體(IPA蒸氣+N2)之吐出流量在吐出開始後逐漸增大。 In the second processing example, as in the first processing example, the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the second outlet 39 may be gradually increased after the start of the discharge.

又，第2處理例中，亦可如第1處理例般，使由第1吐出口35之混合氣體(IPA蒸氣+N2)之吐出流量在吐出開始後逐漸增大。又，基板W之旋轉速度亦可如第1處理例般，在吐出開始後逐漸增大。 In the second processing example, as in the first processing example, the discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first discharge port 35 may be gradually increased after the discharge is started. The rotation speed of the substrate W may be gradually increased after the start of ejection, as in the first processing example.

圖8為用於說明本發明第2實施形態之基板處理裝置201之構成的圖解性圖。 FIG. 8 is a schematic diagram for explaining a configuration of a substrate processing apparatus 201 according to a second embodiment of the present invention.

第2實施形態中，與第1實施形態共通之部分係加註與圖1至圖7之情況相同的元件符號並省略說明。第2實施形態之基板處理裝置201與第1實施形態之基板處理裝置1的主要相異點在於：設置了與由旋轉夾具5所保持之基板W之上表面相對向的對向構件202。 In the second embodiment, parts that are common to the first embodiment are denoted by the same reference numerals as those in the case of FIGS. 1 to 7, and descriptions thereof are omitted. The main difference between the substrate processing apparatus 201 of the second embodiment and the substrate processing apparatus 1 of the first embodiment is that an opposing member 202 is provided facing the upper surface of the substrate W held by the rotary jig 5.

對向構件202為圓板狀。對向構件202之直徑係與基板W之直徑相等、或大於基板W之直徑。於對向構件202之下表面，係與由旋轉夾具5所保持之基板W之上表面相對向，並形成有由平坦面所構成之圓形的對向面204。對向面204係與基板W之上表面全區域相對向。對向構件202係藉由支架205，以對向構件202之中心軸線位於旋轉夾具5之旋轉軸線A1上的方式，且依水平姿勢被支撐著。 The opposing member 202 is disk-shaped. The diameter of the opposing member 202 is equal to or larger than the diameter of the substrate W. The lower surface of the opposing member 202 is opposed to the upper surface of the substrate W held by the rotating jig 5, and a circular opposing surface 204 formed of a flat surface is formed. The facing surface 204 faces the entire area of the upper surface of the substrate W. The opposing member 202 is supported by the bracket 205 in a horizontal posture such that the center axis of the opposing member 202 is located on the rotation axis A1 of the rotating jig 5.

於對向構件202上表面，固定著以通過對向構件202 中心之鉛直軸線(與旋轉夾具5之旋轉軸線A1一致的鉛直軸線)為中心軸線的支架205。支架205係形成為中空，於其內部，以朝鉛直方向延伸之狀態插通著氣體噴嘴(噴嘴)203。氣體噴嘴203係經由形成於對向構件202中央部的貫通孔212，突出至較對向面204更下方。氣體噴嘴203係以使第1及第2吐出口35、39露出至較對向面204更下方的方式，對於對向構件202進行定位。更具體而言，對向面204與第2吐出口39之上端之間的間隙為若干量。 The upper surface of the opposing member 202 is fixed to pass through the opposing member 202. The center vertical axis (the vertical axis coincident with the rotation axis A1 of the rotation jig 5) is the bracket 205 of the center axis. The holder 205 is formed hollow, and a gas nozzle (nozzle) 203 is inserted through the holder 205 in a state extending in the vertical direction. The gas nozzle 203 protrudes below the facing surface 204 through a through hole 212 formed in the central portion of the facing member 202. The gas nozzle 203 positions the facing member 202 so that the first and second outlets 35 and 39 are exposed below the facing surface 204. More specifically, the gap between the facing surface 204 and the upper end of the second outlet 39 is a certain amount.

於氣體噴嘴203之第1氣體流徑34，連接著第3氣體配管206。於第3氣體配管206，介入裝設著第3氣體閥207。於氣體噴嘴203之第2氣體流徑38，連接著第4氣體配管208。於第4氣體配管208，介入裝設著第4氣體閥209。若第3氣體閥207被打開，由第3氣體配管206供給至氣體噴嘴203之第1氣體流徑34的混合氣體(IPA蒸氣+N2)，係由第1吐出口35朝下方吐出。又，若第4氣體閥209被打開，由第4氣體配管208供給至氣體噴嘴203之第2氣體流徑38的混合氣體(IPA蒸氣+N2)，係由第2吐出口39朝水平方向且放射狀地吐出。 A third gas pipe 206 is connected to the first gas flow path 34 of the gas nozzle 203. A third gas valve 207 is interposed in the third gas pipe 206. A fourth gas pipe 208 is connected to the second gas flow path 38 of the gas nozzle 203. A fourth gas valve 209 is interposed in the fourth gas pipe 208. When the third gas valve 207 is opened, the mixed gas (IPA vapor + N 2 ) supplied from the third gas pipe 206 to the first gas flow path 34 of the gas nozzle 203 is discharged downward from the first outlet 35. When the fourth gas valve 209 is opened, the mixed gas (IPA vapor + N 2 ) supplied from the fourth gas pipe 208 to the second gas flow path 38 of the gas nozzle 203 is horizontally moved from the second outlet 39 And spit out radially.

於支架205係結合有支撐構件升降單元211。控制裝置3係控制支撐構件升降單元211，使對向構件202之對向面204於接近由旋轉夾具5所保持之基板W上表面的接近位置、與大幅退避至旋轉夾具5上方的退避位置之間進行升降。在對向構件202位於接近位置時，氣體噴嘴203之凸緣33之下表面33c(參照圖2)係隔著既定之間隔W2(例如約6mm)與基板W上表面相對向。 A supporting member lifting unit 211 is coupled to the bracket 205. The control device 3 controls the supporting member elevating unit 211 such that the opposing surface 204 of the opposing member 202 is close to the approaching position of the upper surface of the substrate W held by the rotary jig 5 and is retracted to a large extent to the retracting position above the rotary jig 5. Lifting from time to time. When the opposing member 202 is located at the close position, the lower surface 33c (refer to FIG. 2) of the flange 33 of the gas nozzle 203 faces the upper surface of the substrate W at a predetermined interval W2 (for example, about 6 mm).

控制裝置3係依照預定之程式，控制支撐構件升降單元211等之動作。進而，控制裝置3係控制第3氣體閥207、第4 氣體閥209等的開關動作等。 The control device 3 controls operations of the support member elevating unit 211 and the like in accordance with a predetermined program. Furthermore, the control device 3 controls the third gas valve 207 and the fourth gas valve Switching operation of the gas valve 209 and the like.

第2實施形態之基板處理裝置201係例如實行與第1處理例(參照圖3及圖4A至4F)同等的處理。於乾燥步驟(圖3之步驟S6)，控制裝置3係控制支撐構件升降單元211，將對向構件202配置於接近位置。其後，進行由氣體噴嘴203之混合氣體(IPA蒸氣+N2)的吐出。來自氣體噴嘴203之第1及第2吐出口35、39的混合氣體(IPA蒸氣+N2)的吐出時機及吐出流量、以及基板W之旋轉態樣，係與第1實施形態之第1處理例的情況同等。因此，第2實施形態係發揮與第1實施形態相關說明之效果同等的效果。 The substrate processing apparatus 201 of the second embodiment performs, for example, the same processing as that of the first processing example (see FIGS. 3 and 4A to 4F). In the drying step (step S6 in FIG. 3), the control device 3 controls the supporting member elevating unit 211, and arranges the facing member 202 at an approach position. Thereafter, the mixed gas (IPA vapor + N 2 ) from the gas nozzle 203 is discharged. The discharge timing and discharge flow rate of the mixed gas (IPA vapor + N 2 ) from the first and second discharge ports 35 and 39 of the gas nozzle 203 and the rotation state of the substrate W are the same as the first processing of the first embodiment. The case is the same. Therefore, the second embodiment has the same effects as those described in the first embodiment.

又，第2實施形態係除了第1實施形態相關說明之作用效果以外，由第2吐出口39所吐出之混合氣體(IPA蒸氣+N2)充滿於對向面204與基板W上表面之間的空間210。因此，可抑制混合氣體(IPA蒸氣+N2)由基板W上表面附近流出的情形。藉此，可將邊界46的周圍環境持續保持為更加富含IPA之蒸氣的狀態。 In addition, in the second embodiment, in addition to the effects described in the first embodiment, a mixed gas (IPA vapor + N 2 ) discharged from the second outlet 39 is filled between the facing surface 204 and the upper surface of the substrate W. Space 210. Therefore, it is possible to suppress the mixed gas (IPA vapor + N 2 ) from flowing out from the vicinity of the upper surface of the substrate W. Thereby, the surrounding environment of the boundary 46 can be continuously maintained as a state richer in IPA vapor.

圖9為用於說明本發明第3實施形態之基板處理裝置301之構成的圖解性圖。 FIG. 9 is a schematic diagram for explaining a configuration of a substrate processing apparatus 301 according to a third embodiment of the present invention.

第3實施形態中，與第2實施形態共通之部分係加註與圖8之情況相同的元件符號並省略說明。第3實施形態之基板處理裝置301與第2實施形態之基板處理裝置201的主要相異點在於：取代對向構件202而設置了對向構件202A。 In the third embodiment, portions common to the second embodiment are denoted by the same reference numerals as those in the case of FIG. 8, and descriptions thereof are omitted. The main difference between the substrate processing apparatus 301 according to the third embodiment and the substrate processing apparatus 201 according to the second embodiment is that an opposing member 202A is provided instead of the opposing member 202.

對向構件202A為圓板狀。對向構件202A之直徑可與基板W之直徑同等，亦可如圖9所示般大於基板W之直徑。於對向構件202A之下表面，係與由旋轉夾具5所保持之基板W之上表面相對向，並形成有對向面204A。對向面204A之中央部係形成 為水平平坦狀。於對向面204A之周緣部，形成有環狀突部(對向周緣部)302。於環狀突部302之下表面，形成有隨著朝向徑方向外部而降低的錐形面303。如圖9所示，在對向構件202A之直徑大於基板W之直徑的情況，對向構件202A之周端邊緣係於俯視時伸出至基板W周端邊緣之更外部。 The opposing member 202A has a disc shape. The diameter of the opposing member 202A may be the same as the diameter of the substrate W, or may be larger than the diameter of the substrate W as shown in FIG. 9. The lower surface of the opposing member 202A is opposed to the upper surface of the substrate W held by the rotating jig 5, and an opposing surface 204A is formed. The central part of the facing surface 204A is formed It is horizontal and flat. An annular protrusion (opposite peripheral edge portion) 302 is formed on a peripheral edge portion of the facing surface 204A. A tapered surface 303 is formed on the lower surface of the annular projection 302 and decreases toward the outside in the radial direction. As shown in FIG. 9, in the case where the diameter of the opposing member 202A is larger than the diameter of the substrate W, the peripheral edge of the opposing member 202A projects beyond the peripheral edge of the substrate W in a plan view.

控制裝置3係控制支撐構件升降單元211，使對向構件202A之對向面204A於接近由旋轉夾具5所保持之基板W上表面的接近位置、與大幅退避至旋轉夾具5上方的退避位置之間進行升降。在對向構件202A位於接近位置時，氣體噴嘴203之凸緣33之下表面33c(參照圖2)係隔著既定之間隔W2(例如約6mm)與基板W上表面相對向。此狀態下，如圖9所示，錐形面303之外周端303a係於上下方向，位於較基板W之上表面更下方。從而，藉由對向面204A與基板W之上表面所區劃的空間，形成自其外側空間起幾乎密封的密閉空間。而且，基板W之上表面周緣部、與環狀突部302(亦即錐形面303)之間，係設置為較對向面204A中央部與基板W上表面中央部之間的間隔明顯更為狹窄。 The control device 3 controls the support member elevating unit 211 so that the opposing surface 204A of the opposing member 202A is close to the approaching position of the upper surface of the substrate W held by the rotary jig 5 and is retracted to a position that is largely retracted above the rotary jig 5 Lifting from time to time. When the opposing member 202A is located at the close position, the lower surface 33c (see FIG. 2) of the flange 33 of the gas nozzle 203 faces the upper surface of the substrate W with a predetermined interval W2 (for example, about 6 mm). In this state, as shown in FIG. 9, the outer peripheral end 303 a of the tapered surface 303 is in the vertical direction, and is located below the upper surface of the substrate W. Therefore, the space defined by the opposing surface 204A and the upper surface of the substrate W forms a closed space that is almost sealed from the outer space. Moreover, the interval between the upper edge of the upper surface of the substrate W and the annular protrusion 302 (that is, the tapered surface 303) is set to be significantly more than the interval between the central portion of the opposing surface 204A and the central portion of the upper surface of the substrate W. For the narrow.

第3實施形態之基板處理裝置301，係例如實行與第2實施形態之基板處理裝置201之情況同等的處理。亦即，於乾燥步驟(圖3之步驟S6)，控制裝置3係控制支撐構件升降單元211，將對向構件202A配置於接近位置。 The substrate processing apparatus 301 of the third embodiment performs, for example, the same processing as that of the substrate processing apparatus 201 of the second embodiment. That is, in the drying step (step S6 in FIG. 3), the control device 3 controls the support member elevating unit 211, and arranges the facing member 202A at the approach position.

又，第3實施形態係除了第2實施形態相關說明之作用效果以外，由於藉由對向面204A與基板W上表面所區劃之空間係自其外側空間起幾乎密封，故供給至對向面204A與基板W上表面之間之空間210A的混合氣體(IPA蒸氣+N2)，不易由該空間210A 被排出。因此，更進一步抑制混合氣體(IPA蒸氣+N2)由基板W上表面附近流出的情形。藉此，可將邊界46的周圍環境持續保持為更加富含IPA之蒸氣的狀態。 In addition, in the third embodiment, in addition to the functions and effects described in the second embodiment, the space defined by the opposing surface 204A and the upper surface of the substrate W is almost sealed from the outer space, so it is supplied to the opposing surface. The mixed gas (IPA vapor + N 2 ) in the space 210A between 204A and the upper surface of the substrate W is not easily discharged from the space 210A. Therefore, the outflow of the mixed gas (IPA vapor + N 2 ) from the vicinity of the upper surface of the substrate W is further suppressed. Thereby, the surrounding environment of the boundary 46 can be continuously maintained as a state richer in IPA vapor.

以上針對本發明之3個實施形態進行了說明，但本發明亦可以其他形態實施。 Although the three embodiments of the present invention have been described above, the present invention may be implemented in other forms.

例如，於第1實施形態之第1處理例(第2及第3實施形態之處理例亦相同)中，列舉了藉由混合氣體(IPA蒸氣+N2)之流量增大、與基板W之旋轉速度之高速化而使液膜去除區域45擴大的情況為例進行說明，但液膜去除區域45之擴大亦可僅藉由混合氣體(IPA蒸氣+N2)之流量增大、及基板W之旋轉速度之高速化的其中一者所達成。 For example, in the first processing example of the first embodiment (the processing examples of the second and third embodiments are also the same), the increase in the flow rate of the mixed gas (IPA vapor + N 2 ) and the difference with the substrate W As an example, the case where the liquid film removal area 45 is enlarged by the increase in the rotation speed is described, but the liquid film removal area 45 may be enlarged only by increasing the flow rate of the mixed gas (IPA vapor + N 2 ) and the substrate W. This is achieved by increasing one of the rotation speeds.

又，上述各實施形態中，雖說明了在由第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出開始前，先開始使自第2吐出口39之混合氣體(IPA蒸氣+N2)吐出，但亦可將由第1吐出口35之混合氣體(IPA蒸氣+N2)的吐出開始時機、與由第2吐出口39之混合氣體(IPA蒸氣+N2)的吐出開始時機設為相同。 In each of the above-mentioned embodiments, it has been explained that before the discharge of the mixed gas (IPA vapor + N 2 ) from the first outlet 35 is started, the mixed gas (IPA vapor + N) from the second outlet 39 is started. 2 ) Ejection, but it is also possible to set the ejection start timing of the mixed gas (IPA vapor + N 2 ) from the first ejection outlet 35 and the ejection start timing of the mixed gas (IPA vapor + N 2 ) from the second ejection outlet 39 For the same.

另外，上述各實施形態中，雖說明了由第1及第2吐出口35、39所吐出之氣體為混合氣體(IPA蒸氣+N2)，但亦可採用不含N2氣體的IPA蒸氣(低表面張力液之蒸氣)作為由第1及第2吐出口35、39所吐出的氣體。 In each of the above embodiments, the gas discharged from the first and second discharge ports 35 and 39 is described as a mixed gas (IPA vapor + N 2 ), but an IPA vapor (N 2 gas-free) ( The vapor of the low surface tension liquid) is used as the gas discharged from the first and second discharge ports 35 and 39.

又，雖列舉了屬於具有較沖洗液低之表面張力之有機溶劑一例的IPA作為低表面張力液進行說明，但作為此種有機溶劑，除了IPA以外，亦可採用例如甲醇、乙醇、丙酮及HFE(氫氟醚)等。 In addition, although IPA, which is an example of an organic solvent having a surface tension lower than that of a rinsing liquid, has been described as a low surface tension liquid, as the organic solvent, in addition to IPA, for example, methanol, ethanol, acetone, and HFE can be used. (Hydrofluoroether) and the like.

又，上述各實施形態中，雖列舉了構成液膜44之處理液為沖洗液的情況為例而進行說明，但構成液膜之處理液亦可為IPA(液體)。此時，由第1及第2吐出口35、39所吐出之氣體中所含的低表面張力液之蒸氣亦可為HFE或EG(乙二醇)。 In each of the above embodiments, the case where the processing liquid constituting the liquid film 44 is a rinse liquid is described as an example, but the processing liquid constituting the liquid film may be IPA (liquid). At this time, the vapor of the low surface tension liquid contained in the gas discharged from the first and second discharge ports 35 and 39 may be HFE or EG (ethylene glycol).

又，雖說明了將氣體噴嘴27、203設為藉由凸緣33將環狀出口50與環狀之第2吐出口39予以上下區隔的構成，但並不限定於此種構成，當然亦可採用其他構成的噴嘴形狀。 In addition, although the configuration has been described in which the gas nozzles 27 and 203 are configured to separate the annular outlet 50 and the annular second outlet 39 by the flange 33, the structure is not limited to this structure, and of course Other nozzle shapes can be used.

另外，亦可使自第1吐出口35所吐出之氣體(第1氣體)、與自第2吐出口39所吐出之氣體(第2氣體)的種類彼此相異。 The types of the gas (the first gas) discharged from the first discharge port 35 and the gas (the second gas) discharged from the second discharge port 39 may be different from each other.

又，上述各實施形態中，雖針對基板處理裝置1、201、301為對圓板狀之基板W進行處理之裝置的情況進行了說明，但基板處理裝置1、201、301亦可為對液晶顯示裝置用玻璃基板等之多角形基板進行處理的裝置。 In each of the above embodiments, the case where the substrate processing apparatuses 1, 201, and 301 are apparatuses for processing a disc-shaped substrate W has been described. However, the substrate processing apparatuses 1, 201, and 301 may be applied to liquid crystals. A display device is a device that processes a polygonal substrate such as a glass substrate.

雖針對本發明之實施形態進行了詳細說明，但此等僅為用於闡明本發明之技術內容的具體例，本發明並不應限定於此等具體例而解釋，本發明之範圍僅由隨附之申請專利範圍所限定。 Although the embodiments of the present invention have been described in detail, these are only specific examples for clarifying the technical content of the present invention, and the present invention should not be limited to these specific examples. The scope of the present invention is only The scope of the attached patent is limited.

本申請案係與於2015年3月5日向日本專利局提出之日本專利特願2015-43708號及2016年2月17日向日本專利局提出之日本專利特願2016-28312號對應，該申請案之所有揭示內容均藉由引用而併入本文中。 This application corresponds to Japanese Patent Application No. 2015-43708 filed with the Japanese Patent Office on March 5, 2015 and Japanese Patent Application No. 2016-28312 filed with the Japanese Patent Office on February 17, 2016. The application All disclosures are incorporated herein by reference.

27‧‧‧氣體噴嘴 27‧‧‧gas nozzle

31‧‧‧內筒(第1筒體) 31‧‧‧Inner cylinder (1st cylinder)

31a‧‧‧下端部分 31a‧‧‧ lower part

32‧‧‧外筒(第2筒體) 32‧‧‧ outer cylinder (second cylinder)

32a‧‧‧下端緣 32a‧‧‧ lower edge

33‧‧‧凸緣 33‧‧‧ flange

33a‧‧‧外周端 33a‧‧‧outer end

33b‧‧‧上表面 33b‧‧‧upper surface

33c‧‧‧下表面 33c‧‧‧ lower surface

34‧‧‧第1氣體流徑 34‧‧‧The first gas flow path

35‧‧‧第1吐出口 35‧‧‧The first spit exit

36‧‧‧圓筒部 36‧‧‧Cylinder

37‧‧‧閉鎖部 37‧‧‧Locking Department

38‧‧‧第2氣體流徑 38‧‧‧ 2nd gas flow path

39‧‧‧第2吐出口 39‧‧‧The second exit

40‧‧‧第1氣體配管 40‧‧‧The first gas piping

42‧‧‧第2氣體配管 42‧‧‧ 2nd gas piping

44‧‧‧液膜 44‧‧‧ liquid film

45‧‧‧液膜去除區域 45‧‧‧Liquid film removal area

46‧‧‧邊界 46‧‧‧ border

47‧‧‧邊界部分 47‧‧‧ border section

48‧‧‧混合氣體氣流 48‧‧‧ mixed gas flow

49‧‧‧馬蘭哥尼對流 49‧‧‧Marangoni Convection

50‧‧‧環狀出口 50‧‧‧Circle Exit

SP‧‧‧空間 SP‧‧‧ Space

W‧‧‧基板 W‧‧‧ substrate

W1‧‧‧間隔 W1‧‧‧ interval

Claims (12)

一種基板處理方法，其包含：水平保持基板之基板保持步驟；於上述基板之上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的液膜去除區域，將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體，由第1吐出口吐出，並對上述處理液之液膜，由與該上表面交叉之方向吹附上述第1氣體的第1氣體吐出步驟；將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體，由與上述第1吐出口相異、且於鉛直方向上配置於較上述第1吐出口更上方之第2吐出口，沿著上述上表面朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟；上述第1氣體係碰到上述上表面而沿著上述上表面流動，以形成將上述液膜朝外方推擠而使上述液膜去除區域擴大之第1氣體流，上述第2氣體係流動於上述第1氣體流之上，且於藉由上述第1氣體流擴大之液膜去除區域之外側形成沿著上述液膜之上表面流動之第2氣體流。 A substrate processing method includes: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on an upper surface of the substrate to form a liquid film covering the upper surface of the substrate; and a liquid film forming step Then, in order to form a liquid film removal region from the liquid film removal liquid film of the processing liquid, a first gas containing a low surface tension liquid vapor having a lower surface tension than the processing liquid is discharged through a first discharge port. And a first gas discharge step of blowing the first gas in a direction intersecting the upper surface of the liquid film of the treatment liquid; and a step of vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid. The second gas is a second gas which is different from the first discharge port and is arranged vertically above the first discharge port in a vertical direction, and the second gas is discharged laterally and radially along the upper surface. A discharging step; and a liquid film removing region expanding step of expanding the liquid film removing region; the first gas system hits the upper surface and flows along the upper surface to form the The first gas flow in which the liquid film is pushed outward to expand the liquid film removal area, the second gas system flows over the first gas flow, and is removed in the liquid film expanded by the first gas flow Outside the region, a second gas flow is formed that flows along the upper surface of the liquid film. 一種基板處理方法，其包含：水平保持基板之基板保持步驟；於上述基板之上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的 液膜去除區域，將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體吐出，並對上述處理液之液膜，由與該上表面交叉之方向吹附上述第1氣體的第1氣體吐出步驟；將含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體，沿著上述上表面朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟；上述第1氣體係碰到上述上表面而沿著上述上表面流動，以形成將上述液膜朝外方推擠而使上述液膜去除區域擴大之第1氣體流，上述第2氣體係流動於上述第1氣體流之上，且於藉由上述第1氣體流擴大之液膜去除區域之外側形成沿著上述液膜之上表面流動之第2氣體流。 A substrate processing method includes: a substrate holding step of horizontally holding a substrate; a liquid film forming step of supplying a processing liquid on an upper surface of the substrate to form a liquid film covering the upper surface of the substrate; and a liquid film forming step Then, in order to form a liquid film from the liquid film of the treatment liquid, The liquid film removing area discharges a first gas containing a vapor of a low surface tension liquid having a lower surface tension than the treatment liquid, and blows the liquid film of the treatment liquid in a direction crossing the upper surface. A first gas discharge step of one gas; a second gas discharge step of discharging a second gas containing a low surface tension liquid vapor having a lower surface tension than the treatment liquid along the upper surface in a lateral and radial manner. And the step of expanding the liquid film removal area to expand the liquid film removal area; the first gas system hits the upper surface and flows along the upper surface to form the liquid film by pushing the liquid film outward A first gas flow with an enlarged film removal region, the second gas system flows over the first gas flow, and is formed along the liquid film on the outside of the liquid film removal region enlarged by the first gas flow. The second gas flow flowing on the surface. 如請求項1或2之基板處理方法，其中，將上述第1氣體吐出步驟、與上述第2氣體吐出步驟並行實行。 The substrate processing method according to claim 1 or 2, wherein the first gas discharge step and the second gas discharge step are performed in parallel. 如請求項1或2之基板處理方法，其中，上述第2氣體吐出步驟係在上述第1氣體吐出步驟開始之前先開始。 The substrate processing method according to claim 1 or 2, wherein the second gas discharge step is started before the first gas discharge step is started. 如請求項1或2之基板處理方法，其中，上述液膜去除區域擴大步驟係包含：使上述第1氣體的流量，在該第1氣體之吐出開始後逐漸增大的第1流量增大步驟；上述基板處理方法係進一步包含：使上述第2氣體的流量在該第2氣體之吐出開始後逐漸增大的第2流量增大步驟。 The substrate processing method according to claim 1 or 2, wherein the step of expanding the liquid film removal region includes a first flow rate increasing step of increasing a flow rate of the first gas after the discharge of the first gas is started. The substrate processing method further includes a second flow rate increasing step of gradually increasing the flow rate of the second gas after the discharge of the second gas is started. 如請求項1之基板處理方法，其中，上述處理液係包括沖洗液；上述低表面張力液係包括有機溶劑。 According to the substrate processing method of claim 1, wherein the processing liquid system includes a rinse liquid, and the low surface tension liquid system includes an organic solvent. 一種基板處理裝置，其包含： 水平保持基板之基板保持單元；用於朝上述基板之上表面供給處理液的處理液供給單元；噴嘴，係具有用於朝下吐出氣體之第1吐出口，且於鉛直方向上較上述第1吐出口更上方具有用於朝橫向吐出氣體之第2吐出口；第1氣體供給單元，係對上述第1吐出口，供給含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第1氣體；第2氣體供給單元，係對上述第2吐出口，供給含有具有較上述處理液低之表面張力的低表面張力液之蒸氣的第2氣體；與控制單元，係控制上述處理液供給單元、上述第1氣體供給單元、上述第2氣體供給單元及上述基板旋轉單元；上述控制單元係實行：於上述基板之上表面供給處理液，形成被覆該基板上表面之處理液之液膜的液膜形成步驟；於上述液膜形成步驟後，為了形成自上述處理液之液膜去除液膜的液膜去除區域，將上述第1氣體由上述第1吐出口吐出，對上述處理液之液膜吹附上述第1氣體的第1氣體吐出步驟；由上述第2吐出口，將上述第2氣體沿著上述基板之上表面朝橫向且放射狀地吐出的第2氣體吐出步驟；與使上述液膜去除區域擴大的液膜去除區域擴大步驟，上述第1氣體係碰到上述上表面而沿著上述上表面流動，以形成將上述液膜朝外方推擠而使上述液膜去除區域擴大之第1氣體流，上述第2氣體係流動於上述第1氣體流之上，且於藉由上述第1氣體流擴大之液膜去除區域之外側形成沿著上述液膜之上表面流動之第2氣體流。 A substrate processing apparatus includes: A substrate holding unit for horizontally holding a substrate; a processing liquid supply unit for supplying a processing liquid to an upper surface of the substrate; a nozzle having a first outlet for discharging a gas downwardly, and is vertical to the first A second discharge port for discharging gas in a lateral direction is provided above the discharge port. A first gas supply unit supplies the first discharge port with a vapor containing a low surface tension liquid having a lower surface tension than the treatment liquid. A first gas; a second gas supply unit for supplying a second gas containing a low surface tension liquid having a lower surface tension than the treatment liquid to the second discharge port; and a control unit for controlling the treatment liquid A supply unit, the first gas supply unit, the second gas supply unit, and the substrate rotation unit; the control unit is configured to supply a processing liquid on the upper surface of the substrate to form a liquid film covering the processing liquid on the upper surface of the substrate A liquid film forming step; after the liquid film forming step, in order to form a liquid film removing area from which the liquid film of the processing liquid is removed, The first gas is ejected from the first outlet, and the first gas is ejected from the processing film by spraying the first gas with the first gas. The second gas is discharged from the second outlet along the upper surface of the substrate. A second gas discharge step that discharges laterally and radially; and a liquid film removal area expansion step that enlarges the liquid film removal area, the first gas system hits the upper surface and flows along the upper surface to form A first gas flow that pushes the liquid film outward to expand the liquid film removal area, the second gas system flows above the first gas flow, and the liquid that is expanded by the first gas flow A second gas flow flowing along the upper surface of the liquid film is formed outside the film removal region. 如請求項7之基板處理裝置，其中，上述噴嘴係包含於內部形成了用於流通上述第1氣體之第1流徑的第1筒體，藉由該筒體之下端 部分形成上述第1吐出口，且於該第1筒體之下端部分設置凸緣；由上述第1吐出口所吐出之上述第1氣體係於上述基板之上表面與上述凸緣之間的空間流通。 The substrate processing apparatus according to claim 7, wherein the nozzle includes a first cylinder having a first flow path through which the first gas flows, and a lower end of the cylinder is formed in the nozzle. The first outlet is partially formed, and a flange is provided at the lower end portion of the first cylinder; the space between the upper surface of the substrate and the flange of the first gas system discharged from the first outlet is provided. Circulation. 如請求項8之基板處理裝置，其中，上述第2吐出口係配置於較上述凸緣更上方。 The substrate processing apparatus according to claim 8, wherein the second outlet is disposed above the flange. 如請求項9之基板處理裝置，其中，上述噴嘴係進一步具有第2筒體，其係包圍上述第1筒體，於與上述第1筒體之間區劃出上述第2氣體所流通的第2流徑；上述第2吐出口係藉由上述第2筒體與上述凸緣所形成。 The substrate processing apparatus according to claim 9, wherein the nozzle further includes a second cylinder, which surrounds the first cylinder, and defines a second region through which the second gas circulates between the first cylinder and the first cylinder. Flow path; the second outlet is formed by the second cylinder and the flange. 如請求項7至10中任一項之基板處理裝置，其中，進一步含有對向構件，其係與上述基板之上表面相對向，具有引導由上述第2吐出口所吐出之上述第2氣體的對向面。 The substrate processing apparatus according to any one of claims 7 to 10, further comprising an opposing member, which faces the upper surface of the substrate, and has a means for guiding the second gas discharged from the second discharge port. Opposite. 如請求項11之基板處理裝置，其中，上述對向構件係具有對向周緣部，其係與上述基板之上表面周緣部相對向，於與該上表面周緣部之間，形成較上述對向面之中央部與上述基板之上表面中央部之間的間隔更狹窄的狹窄間隔。 The substrate processing apparatus according to claim 11, wherein the facing member has a facing peripheral edge portion that faces the peripheral edge portion of the upper surface of the substrate, and forms a facing edge relative to the peripheral edge portion of the upper surface. The interval between the central portion of the surface and the central portion of the upper surface of the substrate is narrower.
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