TWI613842B - 發光裝置 - Google Patents

發光裝置 Download PDF

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TWI613842B
TWI613842B TW103112954A TW103112954A TWI613842B TW I613842 B TWI613842 B TW I613842B TW 103112954 A TW103112954 A TW 103112954A TW 103112954 A TW103112954 A TW 103112954A TW I613842 B TWI613842 B TW I613842B
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light
emitting diode
emitting device
diode unit
wavelength conversion
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TW103112954A
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TW201539797A (zh
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韓政男
任益華
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晶元光電股份有限公司
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Priority to TW103112954A priority Critical patent/TWI613842B/zh
Priority to US14/680,631 priority patent/US9412917B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
    • H01L2924/15156—Side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

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Abstract

一種發光裝置，包含一高散熱透明基板、一波長轉換層以及一發光二極體單元。高散熱透明基板包括一凹槽及一上表面；波長轉換層覆蓋高散熱透明基板之上表面及凹槽；發光二極體單元設置於凹槽中，且位於波長轉換層上方。

Description

發光裝置
本發明係關於一種發光裝置，更具體而言，係關於一種高散熱透明基板上具有發光二極體單元之發光裝置。
固態發光元件中之發光二極體元件(Light Emitting Diode；LED)具有低耗電量、低發熱量、操作壽命長、耐撞擊、體積小、反應速度快、以及可發出穩定波長的色光等良好光電特性，因此常應用於家電、儀表之指示燈及光電產品等領域。與商業電子產品走向輕薄短小的趨勢類似，光電元件也進入微封裝的時代，而發展出晶粒級封裝。此外，隨著光電科技的發展，固態照明在照明效率、操作壽命以及亮度等方面有顯著的進步，因此近年來發光二極體已經被應用於一般的照明用途上。然而，隨著應用的普及化，如何達到光場分布均勻的高品質發光二極體，仍是一個重要的議題。
需注意的是，發光二極體可以與其他裝置結合以形成發光裝置，像是先將發光二極體放置於基板之上再連接到載體的一側，或是以焊料接點或者黏膠等材料形成於載體與發光二極體之間以形成發光裝置。此外，載體上更可以包含電路電性連接到發光二極體的電極。
因此，本發明係關於一種發光裝置。
一種發光裝置，包含一高散熱透明基板，包括一凹槽及一上表面；一波長轉換層，覆蓋該高散熱透明基板之該上表面及該凹槽；以及一發光二極體單元，設置於該凹槽中，且位於該波長轉換層上方。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下
100‧‧‧發光裝置
101‧‧‧透明基板
1011‧‧‧上表面
1012‧‧‧下表面
1013‧‧‧第一側邊
1014‧‧‧第二側邊
102‧‧‧凹槽
1021‧‧‧側邊
103‧‧‧波長轉換層
1031‧‧‧第一部分
1032‧‧‧第二部分
1033‧‧‧第三部分
104‧‧‧發光二極體單元
1041‧‧‧底部
1042‧‧‧頂部
1043‧‧‧第一側壁
1044‧‧‧第二側壁
1045‧‧‧成長基板
1046‧‧‧第一型半導體層
1047‧‧‧活性層
1048‧‧‧第二型半導體層
105‧‧‧第一絕緣材料
106‧‧‧導電結構
107‧‧‧第二絕緣材料
1071‧‧‧頂面
300‧‧‧發光二極體燈泡
30‧‧‧燈罩
32‧‧‧電路板
34‧‧‧散熱件
36‧‧‧電連接件
400‧‧‧發光二極體燈泡
40‧‧‧燈罩
41‧‧‧透鏡
42‧‧‧照明模組
421‧‧‧載體
43‧‧‧燈座
431‧‧‧散熱件
44‧‧‧連接部
45‧‧‧電連接件
D‧‧‧發光二極體單元之底部與透明基板之上表面之間的距離
H‧‧‧發光二極體單元之整體高度
T‧‧‧發光裝置100之整體厚度
第1A~1F圖係顯示本發明之一實施例中一發光裝置之製造流程圖。
第2圖僅顯示一發光二極體單元設置在凹槽中之示意圖。
第3圖係顯示本發明之一實施例中一發光二極體燈泡之立體圖。
第4圖係顯示本發明之另一實施例中一發光二極體燈泡之立體圖。
以下實施例將伴隨著圖式說明本發明之概念，在圖式或說明中，相似或相同之部分係使用相同之標號，並且在圖式中，元件之形狀或厚度可擴大或縮小。需特別注意的是，圖中未繪示或描述之元件，可以是熟習此技藝之人士所知之形式。
第1A~1F圖係顯示本發明之一實施例中一發光裝置100之製造流程圖。參照第1A-1C圖，提供一透明基板101具有複數個凹槽102以及一波長轉換層103覆蓋透明基板101之一上表面1011與複數個凹槽102。複數個發光二極體單元104分別設置於各個凹槽102中，並位於波長轉換層 103上方，而每一個發光二極體單元104之一底部1041直接接觸波長轉換層103，其中發光二極體單元104之底部1041與透明基板101之上表面1011之間的距離D係大於發光二極體單元104之整體高度H的一半，以增加發光二極體單元104擺放於凹槽102中的穩定性。然而，當發光二極體單元104設置於凹槽102時，每一個發光二極體單元104之一頂部1042是可高於透明基板101之上表面1011，使發光二極體單元104之頂部1042暴露於凹槽102外，以提供發光二極體單元104易於夾置擺放以及打線。需注意的是，每一個發光二極體單元104之頂部1042係高於透明基板101之上表面1011或是低於透明基板101之上表面1011可隨實際應用所調整。參照第1D圖，波長轉換層103包括一第一部分1031直接接觸每一個發光單元之底部1041，一第二部分1032覆蓋凹槽102之一側邊1021，以及一第三部分1033連接第二部分1032並延伸至透明基板之上表面1011上方。形成一第一絕緣材料105於每一個發光二極體單元104之一第一側壁1043與一第二側壁1044，並同時覆蓋波長轉換層103之第二部分1032以及第三部分1033。參照第1E圖，形成一導電結構106於每一個發光二極體單元104之頂部1042以及延伸至第一絕緣材料105上方，以電性連接複數個發光二極體單元104。每一個發光二極體單元104之頂部1042係未完全被導電結構106所覆蓋而暴露於外界環境(例如：空氣)。參照第1F圖，形成一第二絕緣材料107於導電結構106上方且完全地覆蓋導電結構106以及每一個發光二極體單元104之部分頂部1042以提供進一步保護(例如：可以防水氣或防塵)，即完成本實施例之發光裝置100。需注意的是，依據實際應用本實施例所述之發光裝置100可於製程後分割為單一凹槽與單一發光二極體單元，或經製程形成具複數個凹槽與複數個發光二極體單元之條狀發光 裝置，或經製程形成具有多行及多列凹槽與複數個發光二極體單元之陣列式發光裝置。
本實施例所述之發光裝置100由透明基板101之一下表面1012至第二絕緣材料107之一頂面1071之間的距離T(發光裝置100之整體厚度)係小於3mm，但亦可隨實際應用所調整。透明基板101包含一透明之高散熱基板，散熱係數係介於2W/m．K至220W/m．K，材料包含氧化物絕緣材料或陶瓷材料，例如但不限定為AlN、Al2O3或石英玻璃等。
波長轉換層103係由波長轉換材料所形成，波長轉換材料係用以吸收發光二極體單元104所發出的第一波長光以發射出第二波長的光，而第一波長不同於第二波長。波長轉換材料包含但不限於黃綠色螢光粉及紅色螢光粉。黃綠色螢光粉之成分係例如鋁氧化物(YAG或TAG)、矽酸鹽、釩酸鹽、鹼土金屬硒化物、或金屬氮化物。紅色螢光粉之成分係例如矽酸鹽、釩酸鹽、鹼土金屬硫化物、金屬氮氧化物、或鎢鉬酸鹽族混合物。
導電結構106包含金屬材料，例如但不限定為金、鋁、銅、鎳、銀或鉑。在本實施例中，導電結構106電性連接複數個發光二極體單元104，藉此將複數個發光二極體單元彼此串聯。在另一實施例中，發光二極體單元104彼此可並聯、或串並聯而形成電性連接。需注意的是，每一發光二極體單元104可各自具有正負電極(圖未示)，且藉由導電結構106連接每一發光二極體單元104之正負電極以彼此串聯連接。此外，本實施例之導電結構106可由透明基板101之一第一側邊1013及一第二側邊1014向外延伸並電性連接至外部電路或外部電源 (圖未示)。
第一絕緣材料105包含環氧樹脂、矽膠(例如：PDMS)、矽橡膠(silicone rubber)、矽樹脂(silicone resin)、彈性PU、多孔PU、丙烯酸橡膠(acrylic rubber)、或玻璃。第二絕緣材料107包含環氧樹脂、矽膠(例如：PDMS)、矽橡膠(silicone rubber)、矽樹脂(silicone resin)、彈性PU、多孔PU、丙烯酸橡膠(acrylic rubber)、或玻璃。其中，第一絕緣材料105及第二絕緣材料107之材料可為相同或相異。此外，第一絕緣材料105及第二絕緣材料107可包含擴散粉、散熱粒子或其組合。擴散粉包含無機微粒(例如：二氧化矽)或有機物微粒(例如：高分子聚合物)；散熱粒子包含金屬、金屬氧化物(例如：氧化鋁)、或非金屬氧化物(例如：氧化硼或氮化硼)。第一絕緣材料105及第二絕緣材料107之形成可利用點膠或噴塗等方式。
第2圖僅顯示一發光二極體單元104設置在凹槽102中之示意圖。發光二極體單元104包含一成長基板1045、一第一型半導體層1046、一活性層1047以及一第二型半導體層1048。成長基板1045包含藍寶石(sapphire)、碳化矽(SiC)、氮化鎵(GaN)、砷化鎵(GaAs)或及其組合。第一型半導體層1046及第二型半導體層1048例如為包覆層(cladding layer)或限制層(confinement layer)，可分別提供電子、電洞，使電子、電洞於活性層1047中結合以發光。第一型半導體層1046、活性層1047、及第二型半導體層1048之材料可包含Ⅲ-V族半導體材料，例如AlxInyGa(1-x-y)N或AlxInyGa(1-x-y)P，其中0≦x,y≦1；(x+y)≦1。依據活性層1047之材料，發光二極體單元104可發出波長介於610nm及650nm之間的紅光， 波長介於530nm及570nm之間的綠光，或是波長介於450nm及490nm之間的藍光。形成第一型半導體層1046、一活性層1047、及一第二型半導體層1048的方法沒有特別限制，除了有機金屬化學氣相沉積法(MOCVD)，亦可使用分子束磊晶(MBE)、氫化物氣相沉積法(HVPE)、蒸鍍法或離子電鍍方法。
上述發光二極體單元104更包含保護層或/及反射層，可將發光二極體單元所發出之光反射朝向成長基板側，其應用上實質上為一五面發光之發光二極體單元。當發光二極體單元設置於透明基板之凹槽中，且位於波長轉換層上(如第1F圖所示)，發光二極體單元發出的光(例如：藍光)可經由波長轉換層轉換成另一光(例如：黃光或黃綠光)，進一步藍光或與黃光(或黃綠光)可混和成一白光射入透明基板，使得白光可以由透明基板之側邊及下表面射出。部分產生之白光可被波長轉換材料(或波長轉換物質)之顆粒散射或反射後射入第一絕緣材料及第二絕緣材料，經由第二絕緣層之上表面射出，使得光線可由發光裝置100之各個表面射出，呈現六面發光。此外，可於絕緣材料中更添加擴散粉(例如：二氧化鈦)增加白光向上散射的效果。
第3圖係顯示本發明之一實施例中一發光二極體燈泡之立體圖。發光二極體燈泡300包含一燈罩30、一電路板32、一散熱件34、一電連接件36以及前述實施例之發光裝置100。發光裝置100可為一發光二極體燈條且固定於電路板32上，並與電路板32形成電性連接。電路板32固接於散熱件34上，散熱件34可幫助發光裝置100所產生的熱藉由傳導、對流或輻射的方式離開發光二極體燈泡300。電連接件36與散熱 件34相連接，亦與外部電源電連接。發光裝置100係大致上垂直(z方向)設置於電路板32上，且排列成一三角形(上視圖)。在另一實施例中，發光裝置100係可以長方形、多邊形、或近似圓形之上視圖排列在電路板32上。
第4圖係顯示本發明之另一實施例中一發光二極體燈泡之立體圖。一發光二極體燈泡400包含一燈罩40、一透鏡41、一照明模組42、一燈座43、一連結部44以及一電連接件45，其中照明模組42具有一載體421以及前述實施例之發光裝置100。發光裝置100可為一發光二極體燈條，以透明基板朝向燈罩40之方向設置於載體421上。透鏡41設置於燈罩40之中；照明模組42位於透鏡41之下方。燈座43用以承載照明模組42，並具有一散熱件431可幫助發光裝置100所產生的熱藉由傳導、對流或輻射的方式離開發光二極體燈泡400。連結部44連結燈座43與電連接件45，且電連接件45與外部電源電連接。
需了解的是，本發明中上述之實施例在適當的情況下，是可互相組合或替換，而非僅限於所描述之特定實施例。本發明所列舉之各實施例僅用以說明本發明，並非用以限制本發明之範圍。任何人對本發明所作之任何顯而易見之修飾或變更接不脫離本發明之精神與範圍。
100‧‧‧發光裝置
101‧‧‧透明基板
1011‧‧‧上表面
1012‧‧‧下表面
1013‧‧‧第一側邊
1014‧‧‧第二側邊
102‧‧‧凹槽
103‧‧‧波長轉換層
104‧‧‧發光二極體單元
105‧‧‧第一絕緣材料
106‧‧‧導電結構
107‧‧‧第二絕緣材料
1071‧‧‧頂面
T‧‧‧發光裝置100之整體厚度

Claims (10)

  1. 一發光裝置，包含：一透明基板，包含一凹槽，一上表面及相對於該上表面之一下表面；一波長轉換層，覆蓋該上表面及該凹槽；一發光二極體單元，包含一側邊，設置於該凹槽中，且位於該波長轉換層上方；以及一第一絕緣材料，環繞該側邊並露出部分的該發光二極體單元，且覆蓋該波長轉換層。
  2. 如申請專利範圍第1項所述之發光裝置，其中該發光二極體單元包含一底面，直接接觸該波長轉換層。
  3. 如申請專利範圍第1項所述之發光裝置，其中該發光二極體單元包含一頂表面，該頂表面高於該上表面。
  4. 如申請專利範圍第1項所述之發光裝置，其中該波長轉換層包含一部份，且該部分被該第一絕緣材料所覆蓋但不被該發光二極體單元所覆蓋。
  5. 如申請專利範圍第4項所述之發光裝置，更包含一導電結構，電性連接該發光二極體單元。
  6. 如申請專利範圍第5項所述之發光裝置，其中該發光二極體單元包含一頂面，該導電結構設置於該頂面，且向外延伸至該第一絕緣材料上方。
  7. 如申請專利範圍第5項所述之發光裝置，更包含一第二絕緣材料，設置於該導電結構及該發光二極體單元上方。
  8. 如申請專利範圍第1項所述之發光裝置，其中該透明基板包含氧化物絕緣材料或陶瓷材料。
  9. 如申請專利範圍第1項所述之發光裝置，其中該透明基板具有一散熱係數介於2-200W/m．K。
  10. 如申請專利範圍第5項所述之發光裝置，其中該透明基板包含複數個凹槽；該波長轉換層，覆蓋該複數個凹槽；複數個發光二極體單元，分別設置於該複數個凹槽中，且位於該波長轉換層上方；以及一導電結構，電性連接該複數個發光二極體單元。
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