TWI613041B - Method for manufacturing glass substrate - Google Patents
Method for manufacturing glass substrate Download PDFInfo
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- TWI613041B TWI613041B TW105109253A TW105109253A TWI613041B TW I613041 B TWI613041 B TW I613041B TW 105109253 A TW105109253 A TW 105109253A TW 105109253 A TW105109253 A TW 105109253A TW I613041 B TWI613041 B TW I613041B
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- glass substrate
- glass
- element forming
- end surface
- grinding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Glass Compositions (AREA)
Description
本發明係關於一種玻璃基板之製造方法。 The present invention relates to a method of manufacturing a glass substrate.
用於液晶顯示器及電漿顯示器等平板顯示器(FPD，Flat Panel Display)之玻璃基板對表面要求較高之平坦度。通常，此種玻璃基板係藉由溢流下拉法而製造。關於溢流下拉法，如專利文獻1(美國專利第3,338,696號)所記載，流入至成形體之上表面之槽且自槽溢出之熔融玻璃沿成形體之兩側面流下，於成形體之下端合流而成形玻璃帶。所成形之玻璃帶一面被向下方拉伸一面被緩冷。經冷卻之玻璃帶被切斷成特定之尺寸，而獲得玻璃基板。 A glass substrate for a flat panel display (FPD) such as a liquid crystal display or a plasma display requires a high degree of flatness on the surface. Usually, such a glass substrate is produced by an overflow down-draw method. In the overflow down-draw method, as described in the patent document 1 (U.S. Patent No. 3,338,696), the molten glass which flows into the groove on the upper surface of the formed body and overflows from the groove flows down the both sides of the formed body, and merges at the lower end of the formed body. And forming a glass ribbon. The formed glass ribbon is slowly cooled while being stretched downward. The cooled glass ribbon is cut to a specific size to obtain a glass substrate.
其後，進行對玻璃基板之切斷面實施研削及研磨之端面加工。於玻璃基板之端面加工中，有自端面產生玻璃之微小之碎片即玻璃屑，並附著於玻璃基板之表面之情形。附著於玻璃基板之表面之玻璃屑導致形成於表面之TFT(thin-film transistor，薄膜電晶體)配線等之斷線及剝離，故較佳為自表面儘可能地去除玻璃屑。專利文獻2(日本專利特開2008-87135號公報)中，揭示有如下方法：藉由使水自玻璃基板之表面之中央部向端面側以簾幕狀噴出，而抑制於端面加工時產生之玻璃屑附著於玻璃基板表面。 Thereafter, the end surface of the cut surface of the glass substrate is subjected to grinding and polishing. In the end surface processing of the glass substrate, there is a case where glass flakes which are minute fragments of glass are generated from the end surface and adhere to the surface of the glass substrate. Since the glass swarf adhering to the surface of the glass substrate causes disconnection and peeling of a TFT (thin-film transistor) wiring formed on the surface, it is preferable to remove the glass swarf as much as possible from the surface. In the method of spraying the water from the center portion of the surface of the glass substrate to the end surface side in the form of a curtain, the method of suppressing the end surface processing is disclosed in the method of the present invention. The glass swarf adheres to the surface of the glass substrate.
[專利文獻1]美國專利第3,338,696號 [Patent Document 1] U.S. Patent No. 3,338,696
[專利文獻2]日本專利特開2008-87135號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-87135
然而，該方法雖可抑制玻璃屑對端面附近之表面之附著，但有無法充分地抑制玻璃屑對表面之中央部之附著之虞。又，由於使水向玻璃基板之表面噴出，故有於端面加工中玻璃基板之端面振動而導致端面加工之精度降低之虞。 However, this method suppresses the adhesion of the glass cullet to the surface near the end surface, but does not sufficiently suppress the adhesion of the glass cullet to the central portion of the surface. Further, since water is ejected onto the surface of the glass substrate, the end surface of the glass substrate is vibrated during the end surface processing, and the precision of the end surface processing is lowered.
又，近年來，玻璃基板之大型化及薄型化進展，將一邊之尺寸超出2000mm之大型玻璃基板作為高精細顯示器用之玻璃基板而製造。於高精細顯示器用之玻璃基板之表面，形成較先前更細線化及高密度化之TFT配線電極之圖案，故即便於先前之顯示器用玻璃基板中並未視作問題之程度之微小之玻璃屑附著於表面，亦有對製品之品質產生問題之虞。又，大型玻璃基板之製造步驟中，為提高生產性而必須對玻璃基板之端面以高速進行加工，故於端面加工時會產生玻璃屑且易飛散。如此，對高精細顯示器用之大型玻璃基板之表面要求較高之清潔性，故於玻璃基板之製造步驟中需要有將附著於玻璃基板表面之玻璃屑有效率地除去之方法。 In addition, in recent years, the glass substrate has been enlarged and thinned, and a large-sized glass substrate having a size exceeding 2000 mm on one side has been produced as a glass substrate for high-definition displays. On the surface of the glass substrate for high-definition displays, a pattern of TFT wiring electrodes which are thinner and denser than before is formed, so that even the glass swarf which is not regarded as a problem in the previous glass substrate for display is small. Attachment to the surface also has problems with the quality of the product. Further, in the manufacturing process of the large-sized glass substrate, in order to improve the productivity, it is necessary to process the end surface of the glass substrate at a high speed, so that glass chips are generated during the end surface processing and are easily scattered. As described above, since the surface of the large-sized glass substrate for high-definition displays is required to have high cleanability, it is necessary to efficiently remove the glass slag adhering to the surface of the glass substrate in the manufacturing process of the glass substrate.
因此，本發明之目的在於提供一種可有效率地提高玻璃基板表面之清潔性之玻璃基板之製造方法。 Accordingly, an object of the present invention is to provide a method for producing a glass substrate which can efficiently improve the cleanliness of the surface of a glass substrate.
本發明之玻璃基板之製造方法具備：切斷步驟，其切斷玻璃基板；端面加工步驟，其係對在切斷步驟中被切斷之玻璃基板之切斷面即切斷端面進行加工；及表面處理步驟，其係對在切斷步驟中被切斷之玻璃基板之主表面進行處理。端面加工步驟係對切斷端面供給研削液之同時，對切斷端面之形狀進行加工。表面處理步驟係將pH值未達10之鹼性液劑塗佈於主表面且與端面加工步驟同時進行。 The method for producing a glass substrate according to the present invention includes: a cutting step of cutting the glass substrate; and an end surface processing step of processing the cut end surface which is the cut surface of the glass substrate cut in the cutting step; A surface treatment step of treating the main surface of the glass substrate that was cut in the cutting step. The end face processing step processes the shape of the cut end face while supplying the grinding liquid to the cut end surface. The surface treatment step is to apply an alkaline liquid having a pH of less than 10 to the main surface and simultaneously with the end surface processing step.
又，較佳為，鹼性液劑包含界面活性劑。 Further, preferably, the alkaline liquid agent contains a surfactant.
又，較佳為，研削液為鹼性液劑，且以於20℃下具有30mN/m~50mN/m之表面張力之方式調整界面活性劑之含量。 Further, it is preferable that the grinding liquid is an alkaline liquid agent and the content of the surfactant is adjusted so as to have a surface tension of 30 mN/m to 50 mN/m at 20 °C.
又，較佳為，玻璃基板之製造方法於表面處理步驟之後，進而包含使用與鹼性液劑不同之清洗液而清洗玻璃基板之清洗步驟。 Moreover, it is preferable that the method of manufacturing a glass substrate further includes a cleaning step of cleaning the glass substrate by using a cleaning liquid different from the alkaline liquid after the surface treatment step.
又，較佳為，玻璃基板係含有SiO2為50質量%~70質量%且含有Al2O3為10質量%~25質量%之鋁矽酸鹽玻璃或鹼鋁矽酸鹽玻璃。 Moreover, it is preferable that the glass substrate contains an aluminosilicate glass or an alkali aluminosilicate glass containing 50% by mass to 70% by mass of SiO 2 and containing 10% by mass to 25% by mass of Al 2 O 3 .
又，較佳為，玻璃基板係藉由溢流下拉法而製造。 Further, it is preferable that the glass substrate is produced by an overflow down-draw method.
又，較佳為，玻璃基板係具有作為一對主表面之元件形成面及粗面化面之顯示器用玻璃基板。該情形時，粗面化面較佳為藉由濕式蝕刻處理以算術平均粗糙度Ra成為0.3nm~0.7nm之方式被粗面化。 Moreover, it is preferable that the glass substrate has a glass substrate for a display which is an element forming surface and a roughening surface of a pair of main surfaces. In this case, it is preferable that the roughened surface is roughened by a wet etching process so that the arithmetic mean roughness Ra becomes 0.3 nm to 0.7 nm.
本發明之玻璃基板之製造方法可使玻璃基板之表面之清潔性有效率地提高。 The method for producing a glass substrate of the present invention can efficiently improve the cleanability of the surface of the glass substrate.
10‧‧‧玻璃基板 10‧‧‧ glass substrate
12‧‧‧元件形成面(主表面) 12‧‧‧Component forming surface (main surface)
12a‧‧‧中央區域 12a‧‧‧Central area
14‧‧‧粗面化面(主表面) 14‧‧‧ rough surface (main surface)
16‧‧‧切斷端面 16‧‧‧ cut end face
L‧‧‧距離 L‧‧‧ distance
S1~S10‧‧‧步驟 S1~S10‧‧‧Steps
圖1係實施形態之玻璃基板之剖視圖。 Fig. 1 is a cross-sectional view showing a glass substrate of an embodiment.
圖2係表示實施形態之玻璃基板之製造方法之流程圖。 Fig. 2 is a flow chart showing a method of manufacturing a glass substrate of an embodiment.
圖3係具有研削後之切斷端面之玻璃基板之剖視圖。 Fig. 3 is a cross-sectional view showing a glass substrate having a cut end face after grinding.
圖4係玻璃基板之元件形成面之側之俯視圖。 Fig. 4 is a plan view showing the side of the element forming surface of the glass substrate.
圖5係表示SiO2及Al2O3之ζ電位之pH值依存性之曲線圖。 Fig. 5 is a graph showing the pH dependence of the zeta potential of SiO 2 and Al 2 O 3 .
(1)玻璃基板之製造方法之概略 (1) Outline of the manufacturing method of the glass substrate
一面參照圖式一面對本發明之實施形態之玻璃基板之製造方法進行說明。由本實施形態之玻璃基板之製造方法所製造之玻璃基板10被用於液晶顯示器、電漿顯示器及有機EL(Electroluminescence，電致發光)顯示器等平板顯示器(FPD)之製造。玻璃基板10亦被用於太陽電 池面板之製造。玻璃基板10具有例如0.1mm~1.1mm之厚度，且具有縱360mm~3000mm及橫460mm~3200mm之尺寸。 A method of manufacturing a glass substrate according to an embodiment of the present invention will be described with reference to the drawings. The glass substrate 10 manufactured by the method for producing a glass substrate of the present embodiment is used for the production of a flat panel display (FPD) such as a liquid crystal display, a plasma display, or an organic EL (Electroluminescence) display. The glass substrate 10 is also used for solar power The manufacture of the pool panel. The glass substrate 10 has a thickness of, for example, 0.1 mm to 1.1 mm, and has a size of 360 mm to 3000 mm in length and 460 mm to 3200 mm in width.
圖1係玻璃基板10之剖視圖。玻璃基板10具有作為一主表面之元件形成面12、及作為另一主表面之粗面化面14。元件形成面12係於FPD之製造步驟中供形成TFT等半導體元件之面。元件形成面12例如係供形成低溫多晶矽半導體或氧化物半導體之面，且係供形成包含低溫多晶矽薄膜、ITO(Indium Thin Oxide，氧化銦錫)薄膜、及彩色濾光片等之複數層薄膜之面。適於高精細、高解像度之顯示器用TFT面板中，TFT之閘極絕緣膜之厚度未達100nm。例如，閘極絕緣膜之厚度未達50nm之TFT面板之開發、製造亦得以推進。此種TFT面板中，不僅閘極絕緣膜較薄，形成半導體元件之各層之膜厚亦較薄。因此，元件形成面12係Ra(算術平均粗糙度：JIS B 0601：2001)為0.2nm以下之極光滑之面。於元件形成面12形成有TFT之玻璃基板10較佳為具有配線之最小線寬未達4μm、且閘極絕緣膜之膜厚未達100nm之電路。用於TFT面板之電極之材料為Ti-Cu及Mo-Cu等Cu系材料。 1 is a cross-sectional view of a glass substrate 10. The glass substrate 10 has an element forming surface 12 as a main surface and a roughening surface 14 as another main surface. The element forming surface 12 is a surface on which a semiconductor element such as a TFT is formed in the manufacturing process of the FPD. The element forming surface 12 is, for example, a surface for forming a low-temperature polycrystalline semiconductor or an oxide semiconductor, and is formed by forming a plurality of thin films including a low-temperature polycrystalline silicon film, an ITO (Indium Thin Oxide) film, and a color filter. surface. In a TFT panel for a display having high definition and high resolution, the thickness of the gate insulating film of the TFT is less than 100 nm. For example, the development and manufacture of TFT panels having a gate insulating film thickness of less than 50 nm have also been advanced. In such a TFT panel, not only is the gate insulating film thin, but also the thickness of each layer forming the semiconductor element is thin. Therefore, the element forming surface 12 is Ra (arithmetic mean roughness: JIS B 0601: 2001) and is an extremely smooth surface of 0.2 nm or less. The glass substrate 10 on which the TFT is formed on the element forming surface 12 is preferably a circuit having a wiring having a minimum line width of less than 4 μm and a gate insulating film having a film thickness of less than 100 nm. The material used for the electrode of the TFT panel is a Cu-based material such as Ti-Cu or Mo-Cu.
粗面化面14係於玻璃基板10之製造步驟中藉由蝕刻處理而形成微小之凹凸之面。粗面化面14以算術平均粗糙度Ra成為0.3nm~0.7nm之方式被粗面化。蝕刻處理例如為乾式蝕刻處理及濕式蝕刻處理。再者，粗面化面14只要可形成所需之表面狀態，則亦可藉由除蝕刻處理以外之表面處理而形成凹凸。例如，粗面化面14亦可藉由膠帶研磨、毛刷研磨、墊研磨、研磨粒研磨及CMP(Chemical Mechanical Polishing，化學機械拋光)等物理研磨而形成凹凸。 The roughened surface 14 is a surface on which minute irregularities are formed by an etching process in the manufacturing process of the glass substrate 10. The roughened surface 14 is roughened so that the arithmetic mean roughness Ra becomes 0.3 nm to 0.7 nm. The etching treatment is, for example, a dry etching treatment and a wet etching treatment. Further, as long as the roughened surface 14 can form a desired surface state, irregularities can be formed by surface treatment other than etching. For example, the roughened surface 14 may be formed into irregularities by physical polishing such as tape polishing, brush polishing, pad polishing, abrasive grain polishing, and CMP (Chemical Mechanical Polishing).
用於玻璃基板10之玻璃係具有以下組成之鋁矽酸鹽玻璃或鹼鋁矽酸鹽玻璃。 The glass used for the glass substrate 10 is an aluminosilicate glass or an alkali aluminosilicate glass having the following composition.
(a)SiO2：50質量%~70質量%、(b)Al2O3：10質量%~25質量%、 (c)B2O3：0質量%~18質量%、(d)MgO：0質量%~10質量%、(e)CaO：0質量%~20質量%、(f)SrO：0質量%~20質量%、(g)BaO：0質量%~10質量%、(h)RO：5質量%~20質量%(R係選自Mg、Ca、Sr及Ba之至少1種)、(i)R'2O：0質量%~2.0質量%(R'係選自Li、Na及K之至少1種)、及(j)選自SnO2、Fe2O3及CeO2之至少1種之金屬氧化物。 (a) SiO 2 : 50% by mass to 70% by mass, (b) Al 2 O 3 : 10% by mass to 25% by mass, (c) B 2 O 3 : 0% by mass to 18% by mass, (d) MgO : 0% by mass to 10% by mass, (e) CaO: 0% by mass to 20% by mass, (f) SrO: 0% by mass to 20% by mass, (g) BaO: 0% by mass to 10% by mass, (h) RO: 5 mass% to 20 mass% (R is at least one selected from the group consisting of Mg, Ca, Sr, and Ba), and (i) R' 2 O: 0% by mass to 2.0% by mass (R' is selected from Li At least one of Na and K) and (j) a metal oxide selected from at least one of SnO 2 , Fe 2 O 3 and CeO 2 .
再者，具有上述組成之玻璃容許其他微量成分以未達0.1質量%之範圍而存在。 Further, the glass having the above composition allows other trace components to exist in a range of less than 0.1% by mass.
其次，對使用溢流下拉法之FPD用之玻璃基板10之製造步驟進行說明。圖2係表示玻璃基板10之製造步驟之流程圖之一例。玻璃基板10之製造步驟主要包含成形步驟(步驟S1)、緩冷步驟(步驟2)、板狀裁切步驟(步驟S3)、切斷步驟(步驟S4)、端面加工步驟(步驟S5)、表面處理步驟(步驟S6)、粗面化步驟(步驟S7)、清洗步驟(步驟S8)、檢查步驟(步驟S9)、及捆包步驟(步驟S10)。 Next, a manufacturing procedure of the glass substrate 10 for an FPD using an overflow down-draw method will be described. FIG. 2 is an example of a flow chart showing a manufacturing procedure of the glass substrate 10. The manufacturing steps of the glass substrate 10 mainly include a forming step (step S1), a slow cooling step (step 2), a plate-shaped cutting step (step S3), a cutting step (step S4), an end surface processing step (step S5), and a surface. Processing step (step S6), roughening step (step S7), washing step (step S8), inspection step (step S9), and packing step (step S10).
成形步驟S1中，自加熱玻璃原料而獲得之熔融玻璃，藉由溢流下拉法而成形片狀之玻璃帶。具體而言，自成形單元之上部溢出而分流之熔融玻璃沿成形單元之兩側面流向下方，於成形單元之下端合流，藉此連續地成形玻璃帶。熔融玻璃在流入至成形步驟S1之前，被冷卻至適於溢流下拉法之成形之溫度例如1200℃。 In the molding step S1, the molten glass obtained by heating the glass raw material is formed into a sheet-like glass ribbon by an overflow down-draw method. Specifically, the molten glass which has overflowed from the upper portion of the forming unit flows downward along both sides of the forming unit, and merges at the lower end of the forming unit, thereby continuously forming the glass ribbon. The molten glass is cooled to a temperature suitable for forming of the overflow down-draw method, for example, 1200 ° C before flowing into the forming step S1.
緩冷步驟S2中，將於成形步驟S1中所成形之玻璃帶一面以不產生應變及翹曲之方式進行溫度管理，一面緩冷至玻璃緩冷點以下。緩冷步驟S2中，玻璃帶一面被搬送至下方一面被冷卻。 In the slow cooling step S2, the glass ribbon formed in the molding step S1 is subjected to temperature management so as not to cause strain and warpage, and is gradually cooled to a temperature below the glass slow cooling point. In the slow cooling step S2, the glass ribbon is cooled while being conveyed to the lower side.
板狀裁切步驟S3中，將於緩冷步驟S2中緩冷之玻璃帶以特定之 長度為單位而切斷，進而將端部區域切斷，獲得素板玻璃。端部區域係形成於玻璃帶之寬度方向之兩端部且較玻璃帶之寬度方向之中央區域厚的區域。藉由板狀裁切步驟S3而獲得之素板玻璃與間隔紙一同交替積層，且被搬送至切斷步驟S4。 In the plate-like cutting step S3, the glass ribbon which is slowly cooled in the slow cooling step S2 is specified. The length is cut in units, and the end region is cut to obtain plain glass. The end region is formed in a region where both end portions in the width direction of the glass ribbon are thicker than the central region in the width direction of the glass ribbon. The plain plate glass obtained by the plate-like cutting step S3 is alternately laminated with the spacer paper, and is conveyed to the cutting step S4.
切斷步驟S4中，將於板狀裁切步驟S3中所獲得之素板玻璃切斷成特定之大小，獲得製品尺寸之玻璃基板10。素板玻璃例如使用雷射而切斷。 In the cutting step S4, the plain glass obtained in the sheet-like cutting step S3 is cut into a specific size to obtain a glass substrate 10 having a product size. The plain glass is cut using, for example, a laser.
端面加工步驟S5中，對在切斷步驟S4中所獲得之玻璃基板10之端面進行加工。端面加工步驟S5中加工之端面係切斷步驟S4中被切斷之玻璃基板10之切斷端面16。端面加工步驟S5主要包含研削步驟與研磨步驟。研削步驟係對切斷端面16供給研削液之同時，對切斷端面16進行研削，將切斷端面16加工成R形狀之步驟。圖3係具有於研削步驟中被研削之切斷端面16之玻璃基板10之剖視圖。研磨步驟係以研削步驟中被研削之切斷端面16之算術平均粗糙度Ra成為0.1μm以下之方式對切斷端面16進行研磨之步驟。 In the end surface processing step S5, the end surface of the glass substrate 10 obtained in the cutting step S4 is processed. The end surface processed in the end surface processing step S5 is the cutting end surface 16 of the glass substrate 10 cut in the step S4. The end face processing step S5 mainly includes a grinding step and a grinding step. The grinding step is a step of grinding the cut end surface 16 while processing the cut end surface 16 into the R shape while supplying the grinding liquid to the cut end surface 16. 3 is a cross-sectional view of the glass substrate 10 having the cut end face 16 ground in the grinding step. The polishing step is a step of polishing the cut end surface 16 such that the arithmetic mean roughness Ra of the cut end surface 16 ground in the grinding step is 0.1 μm or less.
表面處理步驟S6中，於切斷步驟S4中所獲得之玻璃基板10之元件形成面12塗佈pH值未達10之鹼性液劑而對元件形成面12進行表面處理。表面處理步驟S6係與端面加工步驟S5同時進行。具體而言，表面處理步驟S6中將鹼性液劑塗佈於元件形成面12之步驟、與端面加工步驟S5中使用研削液對切斷端面16進行研削之研削步驟同時進行。又，表面處理步驟S6中，於端面加工步驟S5之研削步驟完成之後，將塗佈於元件形成面12之鹼性液劑除去。 In the surface treatment step S6, the element forming surface 12 of the glass substrate 10 obtained in the cutting step S4 is coated with an alkaline liquid having a pH of less than 10 to surface-treat the element forming surface 12. The surface treatment step S6 is performed simultaneously with the end surface processing step S5. Specifically, in the surface treatment step S6, the step of applying the alkaline liquid agent to the element forming surface 12 is performed simultaneously with the grinding step of grinding the cut end surface 16 using the grinding liquid in the end surface processing step S5. Moreover, in the surface treatment step S6, after the grinding step of the end surface processing step S5 is completed, the alkaline liquid agent applied to the element forming surface 12 is removed.
粗面化步驟S7中，進行使經過端面加工步驟S5及表面處理步驟S6後之玻璃基板10之粗面化面14之表面粗糙度增加之表面處理。粗面化步驟S7中進行之表面處理例如係濕式蝕刻處理。 In the roughening step S7, the surface treatment for increasing the surface roughness of the roughened surface 14 of the glass substrate 10 after the end surface processing step S5 and the surface treatment step S6 is performed. The surface treatment performed in the roughening step S7 is, for example, a wet etching treatment.
清洗步驟S8中，利用清洗液清洗經過粗面化步驟S7後之玻璃基 板10。清洗液係與在表面處理步驟S6中所用之鹼性液劑不同之液劑。再者，端面加工步驟S5中於玻璃基板10之主表面附著有研削液而成為濕潤之狀態之玻璃基板10較佳為在清洗步驟S8結束之前不乾燥。其原因在於，若於清洗步驟S8結束之前使其乾燥，則有研削液中所含之成分析出而固著於玻璃基板10之主表面之虞。 In the cleaning step S8, the glass base after the roughening step S7 is cleaned by the cleaning liquid. Board 10. The cleaning liquid is a liquid agent different from the alkaline liquid used in the surface treatment step S6. Further, in the end surface processing step S5, the glass substrate 10 in which the grinding liquid adheres to the main surface of the glass substrate 10 and is wet is preferably not dried before the end of the cleaning step S8. This is because if it is dried before the end of the cleaning step S8, the coating contained in the grinding liquid is analyzed and fixed to the main surface of the glass substrate 10.
檢查步驟S9中，檢查清洗步驟S8中所清洗之玻璃基板10。具體而言，光學測定玻璃基板10之主表面，偵測玻璃基板10之缺陷。玻璃基板10之缺陷例如係形成於玻璃基板10之主表面之脈理、存在於玻璃基板10之主表面之傷痕及裂縫、附著於玻璃基板10之主表面之異物、及存在於玻璃基板10之內部之微小之泡等。 In the inspection step S9, the glass substrate 10 cleaned in the cleaning step S8 is inspected. Specifically, the main surface of the glass substrate 10 is optically measured to detect defects of the glass substrate 10. The defects of the glass substrate 10 are, for example, the veins formed on the main surface of the glass substrate 10, the flaws and cracks existing on the main surface of the glass substrate 10, the foreign matter adhering to the main surface of the glass substrate 10, and the presence of the glass substrate 10. The tiny bubbles inside, etc.
捆包步驟S10中，將檢查步驟S9中之檢查合格之玻璃基板10與用以保護玻璃基板10之間隔紙交替積層於托板上且捆包。捆包後之玻璃基板10出貨至FPD之製造業者等。FPD製造業者係於玻璃基板10之元件形成面12形成TFT等半導體元件而製造FPD。 In the packing step S10, the glass substrate 10 which has passed the inspection in the inspection step S9 and the spacer paper for protecting the glass substrate 10 are alternately laminated on the pallet and bundled. The bundled glass substrate 10 is shipped to a manufacturer of the FPD or the like. The FPD manufacturer manufactures an FPD by forming a semiconductor element such as a TFT on the element forming surface 12 of the glass substrate 10.
(2)表面處理步驟之詳情 (2) Details of the surface treatment steps
對表面處理步驟S6中進行之元件形成面12之表面處理進行說明。表面處理步驟S6中，於元件形成面12塗佈鹼性液劑。鹼性液劑係pH值未達10之液劑，且係包含界面活性劑之液劑。鹼性液劑之pH值較佳為8~9。鹼性液劑例如為氨水。再者，鹼性液劑亦可為三乙醇胺等胺系液劑。界面活性劑例如為非離子系之界面活性劑。 The surface treatment of the element forming surface 12 performed in the surface treatment step S6 will be described. In the surface treatment step S6, an alkaline liquid agent is applied to the element forming surface 12. The alkaline liquid is a liquid having a pH of less than 10 and is a liquid containing a surfactant. The pH of the alkaline solution is preferably from 8 to 9. The alkaline liquid agent is, for example, ammonia water. Further, the alkaline liquid agent may be an amine liquid agent such as triethanolamine. The surfactant is, for example, a nonionic surfactant.
圖4係玻璃基板10之元件形成面12之側之俯視圖。表面處理步驟S6中，於元件形成面12之至少中央區域12a塗佈鹼性液劑。如圖4所示，中央區域12a係除元件形成面12之周圍之端部以外之四邊形之區域。中央區域12a之端與元件形成面12之端之間的距離L為2mm~20mm。 4 is a plan view showing the side of the element forming surface 12 of the glass substrate 10. In the surface treatment step S6, an alkaline liquid agent is applied to at least the central portion 12a of the element forming surface 12. As shown in FIG. 4, the central portion 12a is a quadrangular region other than the end portion around the element forming surface 12. The distance L between the end of the central portion 12a and the end of the element forming surface 12 is 2 mm to 20 mm.
塗佈於元件形成面12之鹼性液劑於端面加工步驟S5之研削步驟 完成後被除去。附著於元件形成面12之鹼性液劑亦可藉由將流體吹送至元件形成面12而自元件形成面12除去。例如，亦可藉由以特定之壓力將純水自噴嘴向元件形成面12吹送，而將鹼性液劑自元件形成面12除去。又，亦可藉由以毛刷清洗元件形成面12，而將鹼性液劑自元件形成面12除去。較佳為，任一情形時均在將鹼性液劑自元件形成面12除去之後，對元件形成面12噴淋純水等以防止元件形成面12之乾燥。自元件形成面12除去之鹼性液劑被回收。亦可使回收之鹼性液劑通過過濾器，將鹼性液劑中包含之異物除去之後再利用。 Grinding step of the alkaline liquid applied to the element forming surface 12 in the end surface processing step S5 It is removed after completion. The alkaline liquid adhering to the element forming surface 12 can also be removed from the element forming surface 12 by blowing a fluid to the element forming surface 12. For example, the alkaline liquid can be removed from the element forming surface 12 by blowing pure water from the nozzle to the element forming surface 12 at a specific pressure. Further, the alkaline liquid agent can be removed from the element forming surface 12 by cleaning the element forming surface 12 with a brush. In any case, after the alkaline liquid agent is removed from the element forming surface 12, pure water or the like is sprayed onto the element forming surface 12 to prevent drying of the element forming surface 12. The alkaline liquid removed from the element forming surface 12 is recovered. The recovered alkaline liquid can also be passed through a filter to remove foreign matter contained in the alkaline liquid and then reused.
(3)端面加工步驟之詳情 (3) Details of the end face processing steps
對端面加工步驟S5中進行之切斷端面16之研削步驟加以說明。於端面加工步驟S5之研削步驟中，使圓柱形狀之研削輪旋轉，使研削輪之側周面接觸到玻璃基板10之切斷端面16。藉此，如圖3所示，切斷端面16之一對角部以具有R形狀之方式被研削。研削步驟中之切斷端面16之加工裕度較佳為30μm~150μm。 The grinding step of the cut end face 16 performed in the end surface processing step S5 will be described. In the grinding step of the end surface processing step S5, the cylindrical grinding wheel is rotated to bring the side peripheral surface of the grinding wheel into contact with the cut end surface 16 of the glass substrate 10. Thereby, as shown in FIG. 3, one of the cut end faces 16 is ground at a diagonal portion so as to have an R shape. The processing margin of the cut end face 16 in the grinding step is preferably from 30 μm to 150 μm.
研削輪係由金屬結合劑砂輪而成形。金屬結合劑砂輪係利用鐵系或銅系之結合劑將複數種金屬之粉末、或合金之粉末凝固並燒結，將研磨粒固定於燒結體之表面而製造之砂輪。研磨粒為金剛石、氧化鋁及碳化矽等微小之粒。研削輪之研磨粒之粒度較佳為#500~#600。研削輪藉由電動馬達而繞旋轉軸旋轉驅動。 The grinding wheel train is formed by a metal bond grinding wheel. The metal bond grinding wheel is a grinding wheel manufactured by solidifying and sintering a powder of a plurality of kinds of metals or alloys using an iron-based or copper-based binder to fix the abrasive grains on the surface of the sintered body. The abrasive grains are fine particles such as diamond, alumina, and tantalum carbide. The particle size of the abrasive grains of the grinding wheel is preferably #500~#600. The grinding wheel is rotationally driven about the rotating shaft by an electric motor.
研削步驟中，對玻璃基板10之切斷端面16供給研削液之同時，藉由研削輪對切斷端面16進行研削。在玻璃基板10之切斷端面16與旋轉之研削輪接觸之區域產生摩擦熱。摩擦熱成為加熱切斷端面16而使玻璃基板10變質之原因。研削液係作為抑制切斷端面16之加熱之冷卻劑而發揮功能。 In the grinding step, the grinding liquid is supplied to the cut end surface 16 of the glass substrate 10, and the cut end surface 16 is ground by the grinding wheel. Friction heat is generated in a region where the cut end surface 16 of the glass substrate 10 is in contact with the rotating grinding wheel. The frictional heat causes the glass substrate 10 to be deteriorated by heating the cut end face 16. The grinding fluid functions as a coolant that suppresses heating of the cut end face 16.
端面加工步驟S5中，使用與表面處理步驟S6中所使用之鹼性液劑相同之液劑作為研削液。於研削液為鹼性之情形時，研削液易滲透 至切斷端面16與研削輪之間隙，故研削液之冷卻效果提高。又，於研削液含有界面活性劑之情形時，研削液之表面張力降低，故研削液之滲透性變大，研削液之冷卻效果進而提高。再者，自研削液之滲透性提高之觀點而言，較佳為以研削液於20℃下具有30mN/m~50mN/m之表面張力之方式調整界面活性劑之含量。又，較佳為以研削液於20℃下具有30mN/m以上且未達48mN/m之表面張力之方式調整界面活性劑之含量。 In the end surface processing step S5, the same liquid agent as the alkaline liquid agent used in the surface treatment step S6 is used as the grinding liquid. When the grinding fluid is alkaline, the grinding fluid is easy to penetrate. Since the gap between the end surface 16 and the grinding wheel is cut, the cooling effect of the grinding fluid is improved. Further, when the grinding fluid contains a surfactant, the surface tension of the grinding fluid is lowered, so that the permeability of the grinding fluid is increased, and the cooling effect of the grinding fluid is further improved. Further, from the viewpoint of improving the permeability of the grinding liquid, it is preferred to adjust the content of the surfactant so that the grinding liquid has a surface tension of 30 mN/m to 50 mN/m at 20 °C. Further, it is preferred to adjust the content of the surfactant so that the grinding fluid has a surface tension of 30 mN/m or more and less than 48 mN/m at 20 °C.
(4)特徵 (4) Features
於自玻璃基板10製造FPD之步驟中，於玻璃基板10之元件形成面12形成TFT等半導體元件，具體而言形成包含多晶矽薄膜及ITO薄膜等之複數層薄膜。在將半導體元件之配線電極形成於元件形成面12時，若於元件形成面12附著有異物，則會導致形成於元件形成面12之配線電極斷線及剝離。因此，於玻璃基板10之製造步驟中，較佳為自元件形成面12儘可能地除去異物。作為異物之代表例，可列舉玻璃之微小之碎片即玻璃屑。玻璃屑主要於板狀裁切步驟S3及切斷步驟S4中之玻璃帶之切斷時，自玻璃基板10之成為切斷端面16之切斷面產生。自切斷端面16產生之玻璃屑之一部分附著於玻璃基板10之元件形成面12。附著於元件形成面12之玻璃屑之高度(距元件形成面12之最大距離)越高，則越易產生半導體元件之配線電極之形成不良。又，作為其他異物之例，可列舉環境中存在之塵垢、塵埃及有機物等。 In the step of manufacturing the FPD from the glass substrate 10, a semiconductor element such as a TFT is formed on the element forming surface 12 of the glass substrate 10, and specifically, a plurality of thin films including a polycrystalline germanium film and an ITO thin film are formed. When the wiring electrode of the semiconductor element is formed on the element forming surface 12, if foreign matter adheres to the element forming surface 12, the wiring electrode formed on the element forming surface 12 is broken and peeled off. Therefore, in the manufacturing step of the glass substrate 10, it is preferable to remove foreign matter as much as possible from the element forming surface 12. As a representative example of the foreign matter, glass flakes which are small pieces of glass can be cited. The glass cullet is mainly generated from the cut surface of the glass substrate 10 which is the cut end surface 16 when the glass ribbon is cut in the plate-like cutting step S3 and the cutting step S4. A part of the glass swarf generated from the cut end face 16 is partially adhered to the element forming face 12 of the glass substrate 10. The higher the height of the glass swarf attached to the element forming surface 12 (the maximum distance from the element forming surface 12), the more likely the formation of the wiring electrode of the semiconductor element is poor. Further, examples of other foreign matter include dust, dust, and organic matter present in the environment.
本實施形態之玻璃基板之製造方法中，為了除去附著於玻璃基板10之元件形成面12之異物，於表面處理步驟S6中，於元件形成面12塗佈鹼性液劑。鹼性液劑之pH值未達10。藉由於元件形成面12塗佈鹼性液劑而將附著於元件形成面12之玻璃屑自元件形成面12剝離而除去。其次，對除去玻璃屑之機構進行說明。 In the method for producing a glass substrate of the present embodiment, in order to remove foreign matter adhering to the element forming surface 12 of the glass substrate 10, an alkaline liquid agent is applied to the element forming surface 12 in the surface treatment step S6. The pH of the alkaline solution is less than 10. The glass frit adhering to the element forming surface 12 is peeled off from the element forming surface 12 by the application of the alkaline liquid agent to the element forming surface 12, and is removed. Next, the mechanism for removing the glass swarf will be described.
玻璃基板10係由鋁矽酸鹽玻璃或鹼鋁矽酸鹽玻璃構成。玻璃基 板10之玻璃組成之主成分為SiO2及Al2O3。因此，自玻璃基板10之切斷端面16產生之玻璃屑主要包含SiO2及Al2O3。玻璃屑之玻璃組成中所占之SiO2之比例尤其大。元件形成面12及玻璃屑均帶電，且在元件形成面12之電荷之符號與玻璃屑之電荷之符號相反之情形時，玻璃屑因電磁力產生之斥力而易附著於元件形成面12。 The glass substrate 10 is composed of aluminosilicate glass or alkali aluminosilicate glass. The main component of the glass composition of the glass substrate 10 is SiO 2 and Al 2 O 3 . Therefore, the glass cullet generated from the cut end face 16 of the glass substrate 10 mainly contains SiO 2 and Al 2 O 3 . The proportion of SiO 2 in the glass composition of the glass cullet is particularly large. When both the element forming surface 12 and the glass cullet are charged, and the sign of the electric charge on the element forming surface 12 is opposite to the sign of the electric charge of the glass swarf, the glass swarf easily adheres to the element forming surface 12 due to the repulsive force generated by the electromagnetic force.
圖5係表示作為玻璃屑之主成分之SiO2及Al2O3之ζ電位(界面動電電位)之pH值依存性之曲線圖。於圖5中，縱軸表示ζ電位(單位為mV)，橫軸表示pH值。如圖5所示，SiO2及Al2O3之ζ電位隨pH值之增加而變小。尤其是SiO2之ζ電位於pH值為5~6時大幅降低，於pH值為6以上時，成為大致固定之負值(-40mV)。 Fig. 5 is a graph showing the pH dependence of the zeta potential (interface electrokinetic potential) of SiO 2 and Al 2 O 3 which are main components of the glass shavings. In Fig. 5, the vertical axis represents the zeta potential (unit: mV), and the horizontal axis represents the pH value. As shown in Fig. 5, the zeta potential of SiO 2 and Al 2 O 3 becomes smaller as the pH value increases. In particular, the SiO 2 is greatly reduced when the pH is 5 to 6, and becomes a substantially negative value (-40 mV) when the pH is 6 or more.
因此，藉由於元件形成面12塗佈鹼性液劑而使元件形成面12中存在之SiO2、及玻璃屑中存在之SiO2之ζ電位成為負值，故元件形成面12及玻璃屑之表面帶負電。因此，藉由作用於具有相同符號之電荷彼此之電磁力之斥力，而易將玻璃屑自元件形成面12剝離。 Therefore, by applying the alkaline liquid agent to the element forming surface 12, the SiO 2 existing in the element forming surface 12 and the ζ potential of SiO 2 present in the glass swarf become negative, so that the element forming surface 12 and the glass swarf are The surface is negatively charged. Therefore, the glass flakes are easily peeled off from the element forming surface 12 by the repulsive force acting on the electromagnetic forces of the electric charges having the same sign.
再者，SiO2之ζ電位於pH值為6以上時大致固定。然而，在將塗佈於元件形成面12之鹼性液劑進而用作端面加工步驟S5中使用之研削液之情形時，自研削液之滲透性之觀點而言，研削液較佳為鹼性。又，自抑制切斷端面16之玻璃之變質之觀點而言，研削液較佳為非強鹼性。因此，研削液之pH值較佳為未達10之鹼性，更佳為8~9之鹼性。再者，塗佈於元件形成面12之液劑亦較佳為鹼性。 Further, the SiO 2 is substantially fixed at a pH of 6 or more. However, in the case where the alkaline liquid applied to the element forming surface 12 is further used as the grinding liquid used in the end surface processing step S5, the grinding liquid is preferably alkaline from the viewpoint of the permeability of the grinding liquid. . Further, from the viewpoint of suppressing deterioration of the glass of the cut end face 16, the grinding liquid is preferably non-strongly alkaline. Therefore, the pH of the grinding fluid is preferably less than 10 alkaline, more preferably 8-9 alkaline. Further, the liquid agent applied to the element forming surface 12 is also preferably alkaline.
又，如圖5所示，作為玻璃屑之主成分之一之Al2O3之ζ電位於pH值為8以上時成為負值。因此，為了將主要包含Al2O3之玻璃屑自元件形成面12剝離，塗佈於元件形成面12之鹼性液劑之pH值較佳為8~9。 Further, as shown in FIG. 5, the electric current of Al 2 O 3 which is one of the main components of the glass shavings is a negative value when the pH is 8 or more. Therefore, in order to peel off the glass flakes mainly containing Al 2 O 3 from the element forming surface 12, the pH of the alkaline liquid agent applied to the element forming surface 12 is preferably 8 to 9.
又，鹼性液劑包含界面活性劑。界面活性劑具有將附著於元件形成面12之塵垢、塵埃及有機物等除玻璃屑以外之異物自元件形成面 12剝離而除去之效果。 Further, the alkaline liquid agent contains a surfactant. The surfactant has a foreign matter other than glass swarf, such as dust, dust, and organic matter adhering to the element forming surface 12, from the element forming surface. 12 peeling and removing the effect.
又，塗佈於元件形成面12之鹼性液劑於端面加工步驟S5及表面處理步驟S6完成之後藉由毛刷等而除去。於清洗步驟S8中用於清洗玻璃基板10之清洗液係與表面處理步驟S6中使用之鹼性液劑不同之液劑。因此，為了防止對後續步驟之影響，較佳為於端面加工步驟S5結束之後且後續步驟開始之前，將塗佈於元件形成面12之鹼性液劑自元件形成面12儘可能地除去。又，於後續步驟之粗面化步驟S7中，在對元件形成面12之相反側之主表面即粗面化面14使用酸性液劑進行濕式蝕刻處理之情形時，較佳為預先將附著於粗面化面14之鹼性液劑藉由純水而除去。 Further, the alkaline liquid applied to the element forming surface 12 is removed by a brush or the like after completion of the end surface processing step S5 and the surface treatment step S6. The cleaning liquid for cleaning the glass substrate 10 in the cleaning step S8 is different from the alkaline liquid used in the surface treatment step S6. Therefore, in order to prevent the influence on the subsequent steps, it is preferable to remove the alkaline liquid applied to the element forming surface 12 from the element forming surface 12 as much as possible after the end surface processing step S5 is completed and before the subsequent step is started. Further, in the roughening step S7 of the subsequent step, when the rough surface 14 which is the main surface opposite to the element forming surface 12, that is, the rough surface 14 is subjected to wet etching treatment using an acidic liquid agent, it is preferable to adhere in advance. The alkaline liquid on the roughened surface 14 is removed by pure water.
因此，本實施形態之玻璃基板之製造方法可藉由於元件形成面12塗佈鹼性液劑，而將附著於元件形成面12之玻璃屑有效率地除去。因此，於自玻璃基板10製造FPD之步驟中，可抑制形成於元件形成面12之半導體元件之Cu系材料之配線電極之破損及斷線等不良狀況之產生。 Therefore, in the method for producing a glass substrate of the present embodiment, the glass frit adhering to the element forming surface 12 can be efficiently removed by applying the alkaline liquid agent to the element forming surface 12. Therefore, in the step of manufacturing the FPD from the glass substrate 10, it is possible to suppress the occurrence of defects such as breakage and disconnection of the wiring electrode of the Cu-based material of the semiconductor element formed on the element forming surface 12.
又，近年來，玻璃基板之大型化及薄型化進展，將一邊之尺寸超出2000mm之大型玻璃基板作為高精細顯示器用之玻璃基板而製造。於高精細顯示器用之玻璃基板之表面，形成較先前更細線化及高密度化之配線電極，故即便於先前之顯示器用玻璃基板中並未視作問題之程度之微小之玻璃屑附著於表面，亦有製品之品質產生問題之虞。又，於大型玻璃基板之製造步驟中，為了提高生產性而必須對玻璃基板之端面以高速進行加工，故於端面加工時易產生玻璃屑。 In addition, in recent years, the glass substrate has been enlarged and thinned, and a large-sized glass substrate having a size exceeding 2000 mm on one side has been produced as a glass substrate for high-definition displays. On the surface of the glass substrate for high-definition display, a wiring electrode which is thinner and denser than before is formed, so that even a small amount of glass swarf which is not regarded as a problem in the prior glass substrate for display adheres to the surface. There are also problems with the quality of the products. Further, in the manufacturing process of the large-sized glass substrate, in order to improve the productivity, it is necessary to process the end surface of the glass substrate at a high speed, so that glass chips are likely to be generated at the time of end surface processing.
本實施形態之玻璃基板之製造方法中，藉由於元件形成面12塗佈鹼性液劑之步驟，即便玻璃基板10為大型，亦可抑制玻璃屑對元件形成面12之附著，又，即便在附著有玻璃屑之情形時亦可有效率地除去玻璃屑。又，藉由使元件形成面12及玻璃屑帶負電而可抑制玻璃屑 對元件形成面12之附著，即便為微小之玻璃屑亦可降低玻璃屑對元件形成面12之附著量。又，即便在玻璃屑附著於元件形成面12之情形時，亦可由後續步驟之清洗步驟S8而除去玻璃屑。因此，本實施形態之玻璃基板之製造方法可將先前之顯示器用玻璃基板中並未視作問題之程度之微小之玻璃屑或玻璃微粒自元件形成面12有效率地除去。進而，於表面處理步驟S6中，可藉由使用包含界面活性劑之鹼性液劑亦將附著於元件形成面12之有機物除去。 In the method for producing a glass substrate of the present embodiment, by applying the alkaline liquid agent to the element forming surface 12, even if the glass substrate 10 is large, the adhesion of the glass frit to the element forming surface 12 can be suppressed, and even in the case of The glass cullet can also be removed efficiently when the glass swarf is attached. Moreover, the glass shavings can be suppressed by negatively charging the element forming surface 12 and the glass chips The adhesion to the element forming surface 12 can reduce the amount of adhesion of the glass swarf to the element forming surface 12 even if it is minute glass swarf. Further, even in the case where the glass frit adheres to the element forming surface 12, the glass cullet can be removed by the cleaning step S8 of the subsequent step. Therefore, in the method for producing a glass substrate of the present embodiment, the glass frits or glass fine particles which are not considered to be a problem in the conventional glass substrate for display can be efficiently removed from the element forming surface 12. Further, in the surface treatment step S6, the organic substance adhering to the element forming surface 12 can also be removed by using an alkaline liquid agent containing a surfactant.
(5)變化例 (5) Variations
(5-1)變化例A (5-1) Change A
本實施形態之表面處理步驟S6中，於玻璃基板10之元件形成面12塗佈鹼性液劑。然而，於表面處理步驟S6中，亦可於玻璃基板10之粗面化面14亦塗佈鹼性液劑。藉由於粗面化面14塗佈鹼性液劑而將附著於粗面化面14之玻璃屑除去。再者，為了於玻璃基板10之元件形成面12及粗面化面14塗佈鹼性液劑，亦可將玻璃基板10浸漬於鹼性液劑之中。 In the surface treatment step S6 of the present embodiment, an alkaline liquid agent is applied to the element forming surface 12 of the glass substrate 10. However, in the surface treatment step S6, an alkaline liquid agent may also be applied to the roughened surface 14 of the glass substrate 10. The glass frit adhering to the roughening surface 14 is removed by applying the alkaline liquid agent to the roughened surface 14. Further, in order to apply an alkaline liquid to the element forming surface 12 and the roughening surface 14 of the glass substrate 10, the glass substrate 10 may be immersed in an alkaline liquid.
本變化例中，藉由於元件形成面12之相反側之主表面即粗面化面14塗佈鹼性液劑而可抑制玻璃屑對粗面化面14之附著，於粗面化步驟S7中，可抑制粗面化面14中之局部之蝕刻不均之產生。 In the present modification, the alkaline liquid agent is applied to the roughened surface 14 which is the main surface opposite to the element forming surface 12, whereby the adhesion of the glass cullet to the roughened surface 14 can be suppressed, and in the roughening step S7 The occurrence of local etch unevenness in the roughened surface 14 can be suppressed.
進而，藉由使用包含界面活性劑之鹼性液劑而亦可除去附著於粗面化面14之有機物，可抑制因將有機物作為遮罩發揮作用而產生之蝕刻不均之發生。藉此，能夠使粗面化面14之中央區域之算術平均粗糙度Ra為0.4nm~0.6nm之範圍內。粗面化面14之中央區域為元件形成面12之中央區域12a之相反側之區域。 Further, by using an alkaline liquid agent containing a surfactant, the organic substance adhering to the roughening surface 14 can be removed, and the occurrence of etching unevenness caused by the action of the organic substance as a mask can be suppressed. Thereby, the arithmetic mean roughness Ra of the central region of the roughened surface 14 can be in the range of 0.4 nm to 0.6 nm. The central portion of the roughened surface 14 is the region on the opposite side of the central portion 12a of the element forming surface 12.
再者，粗面化面14之粗面化處理較佳為藉由使用有酸性液劑之濕式蝕刻處理而進行。於粗面化面14之粗面化處理中，為了不使玻璃基板10之溫度上升而導致玻璃基板10之元件形成面12乾燥，塗佈於粗 面化面14之酸性液劑之溫度較佳為50℃以下，更佳為30℃以下。 Further, the roughening treatment of the roughened surface 14 is preferably carried out by a wet etching treatment using an acidic liquid. In the roughening treatment of the roughened surface 14, the element forming surface 12 of the glass substrate 10 is dried in order to prevent the temperature of the glass substrate 10 from rising, and is applied to the rough surface. The temperature of the acidic liquid of the surfaced surface 14 is preferably 50 ° C or lower, more preferably 30 ° C or lower.
(5-2)變化例B (5-2) Change B
本實施形態之端面加工步驟S5之研削步驟係對切斷端面16供給研削液之同時，對切斷端面16進行研削而將切斷端面16加工成R形狀之步驟。本實施形態中，使用與表面處理步驟S6中使用之鹼性液劑相同之液劑作為研削液。然而，研削液亦可使用與表面處理步驟S6中使用之鹼性液劑不同之液劑。例如，亦可使用純水作為研削液。 The grinding step of the end surface processing step S5 of the present embodiment is a step of grinding the cut end surface 16 and processing the cut end surface 16 into an R shape while supplying the grinding liquid to the cut end surface 16. In the present embodiment, the same liquid agent as the alkaline liquid agent used in the surface treatment step S6 is used as the grinding liquid. However, the grinding liquid may also use a liquid agent different from the alkaline liquid agent used in the surface treatment step S6. For example, pure water can also be used as the grinding fluid.
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| JP6368364B2 (en) | 2018-08-01 |
| CN106795042A (en) | 2017-05-31 |
| CN106795042B (en) | 2019-09-13 |
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