TWI612610B - Batch type substrate processing device - Google Patents
Batch type substrate processing device Download PDFInfo
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- TWI612610B TWI612610B TW102138236A TW102138236A TWI612610B TW I612610 B TWI612610 B TW I612610B TW 102138236 A TW102138236 A TW 102138236A TW 102138236 A TW102138236 A TW 102138236A TW I612610 B TWI612610 B TW I612610B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
本發明之課題係揭示一種批量式基板處理裝置。本發明一實施形態之批量式基板處理裝置係包含有可上下積層裝載複數基板來之舟皿的批量式基板處理裝置，其特徵在於包含有環支持器、支撐桿及端接器，該環支持器(ring holder)係支撐基板之底部而可載置基板；該支撐桿係從舟皿之垂直框架突出配置，並支撐環支持器之底部而可載置環支持器；該端接器(end effector)係從環支持器之外周面之外側佔有與環支持器同一平面上之空間並且進入舟皿，支撐基板之底部以底部舉起(bottom-lift)方式將基板裝載於舟皿或從舟皿進行卸載。 The subject of the present invention is to disclose a batch type substrate processing apparatus. A batch-type substrate processing apparatus according to an embodiment of the present invention is a batch-type substrate processing apparatus including a boat capable of laminating a plurality of substrates on top and bottom. The ring holder supports the bottom of the substrate and can be used to mount the substrate; the support rod is protruded from the vertical frame of the boat and supports the bottom of the ring holder to support the ring holder; the end connector (effector) takes the space on the same plane as the ring support from the outer side of the ring support and enters the boat. The bottom of the support substrate is bottom-lifted to load the substrate on or from the boat. The dish is unloaded.
Description
本發明係有關於一種批量式基板處理裝置。更詳細言之，係有關於一種可使用底部舉起(bottom-lift)方式之端接器(end effector)，將載置於環支持器上之基板進行裝載/卸載之批量式基板處理裝置。 The present invention relates to a batch type substrate processing apparatus. More specifically, the present invention relates to a batch type substrate processing apparatus capable of loading / unloading a substrate placed on a ring holder using an end effector using a bottom-lift method.
基板處理裝置大致分為蒸氣沉積(Vapor Deposition)裝置、及退火(Annealing)裝置。 The substrate processing apparatus is roughly classified into a vapor deposition (Vapor Deposition) apparatus and an annealing (Annealing) apparatus.
蒸氣沉積裝置係用以形成構成半導體之核心結構之透明傳導層、絕緣層、金屬層或矽層之裝置，有LPCVD(Low Pressure Chemical Vapor Deposition：低壓化學氣相沉積)或PECVD(Plasma-Enhanced Chemical Vapor Deposition：電漿輔助化學氣相沉積)等化學氣相蒸氣沉積裝置、濺鍍(Sputtering)等物理氣相蒸氣沉積裝置。 Vapor deposition devices are devices used to form transparent conductive layers, insulating layers, metal layers, or silicon layers that form the core structure of semiconductors. There are LPCVD (Low Pressure Chemical Vapor Deposition) or PECVD (Plasma-Enhanced Chemical Vapor Deposition: chemical vapor deposition equipment such as plasma-assisted chemical vapor deposition), and physical vapor deposition equipment such as sputtering.
退火裝置係對蒸氣沉積於諸如用於半導體製造之矽晶圓之基板上的預定薄膜進行結晶化、相變化等製程所需之熱處理過程的裝置。 The annealing device is a device for performing a heat treatment process such as crystallization, phase change, etc., on a predetermined thin film vapor-deposited on a substrate such as a silicon wafer for semiconductor manufacturing.
圖1係顯示習知批量式基板處理裝置之立體圖， 圖2係習知批量式基板處理裝置之平面圖及截面圖。此種習知批量式基板處理裝置揭示於韓國登錄專利公報第772462號。 FIG. 1 is a perspective view showing a conventional batch type substrate processing apparatus. 2 is a plan view and a cross-sectional view of a conventional batch type substrate processing apparatus. Such a conventional batch type substrate processing apparatus is disclosed in Korean Registered Patent Publication No. 772462.
參照圖1及圖2，習知之批量式基板處理裝置係於具有下部開放而於內部形成收容空間之開口部以用於處理半導體製造製程之反應腔室(圖中未示)設可將複數基板10上下積層來裝載(loading)之舟皿20。 Referring to FIGS. 1 and 2, a conventional batch type substrate processing apparatus is provided in a reaction chamber (not shown in the figure) having an opening portion which is opened at the lower portion and forms a receiving space therein for processing semiconductor manufacturing processes. 10 is stacked up and down to load a boat 20.
又，基板10在舟皿20之裝載及卸載可藉機器手臂之端接器(end effector)40從設於台(圖中未示)之卡匣(圖中未示)移送。 In addition, the loading and unloading of the substrate 10 on the boat 20 can be transferred from a cassette (not shown) provided on a stage (not shown) by an end effector 40 of a robot arm.
舟皿20具有形成柱狀之3個垂直框架22、24，支持桿26從各垂直框架22、24與基板10之個數相等地突出形成。 The boat 20 has three vertical frames 22 and 24 formed in a columnar shape, and the support rods 26 are formed so as to protrude from the number of the vertical frames 22 and 24 and the substrate 10 equally.
從3個垂直框架22、24突出至同一平面上之3個支撐桿26支撐環支持器(ring holder)30之底部。此時，支持桿26支撐環支持器30之圓周底部等分成120°之3點。 Three support rods 26 protruding from the three vertical frames 22 and 24 on the same plane support the bottom of the ring holder 30. At this time, the circumferential bottom of the support rod 26 supporting ring holder 30 is equally divided into three points of 120 °.
可於環支持器30之上部載置基板10。環狀之環支持器30可將基板10之底部支撐於圓形之緣面上。 The substrate 10 can be placed on the upper part of the ring holder 30. The ring-shaped ring holder 30 can support the bottom of the substrate 10 on a circular edge surface.
以環支持器30及干擾環支持器30之外側空間之支撐桿26封閉基板10之底部空間，僅支撐桿26之佔有空間之外之基板10的上部空間露出，藉此，可以頂部邊緣抓持(top-edge-grip)方式之端接器40進行基板10之裝載/卸載。頂部邊緣抓持方式之端接器40在舟皿20內進入平面上作業路徑時，為避免與支撐桿26之干擾，頂部邊緣抓持方式之端 接器40之寬度具有可***從兩側突出成放射狀之2個支撐桿26之間隔之間的大小，並於頂部邊緣抓持方式之端接器40之端部備有避免溝部28，而可避免頂部邊緣抓持方式之端接器40之作業路徑與突出至水平方向之剩餘之1個支撐桿26的干擾。 The bottom space of the base plate 10 is closed by the support rods 26 of the space outside the ring support 30 and the interference ring support 30, and only the upper space of the substrate 10 outside the space occupied by the support rods 26 is exposed, whereby the top edge can be grasped. The top-edge-grip terminator 40 performs loading / unloading of the substrate 10. In order to avoid interference with the support rod 26 when the terminator 40 of the top edge gripping method enters the working path on a plane in the boat 20, The width of the connector 40 has a size that can be inserted between the two support rods 26 protruding radially from both sides, and a groove avoidance portion 28 is provided at the end of the terminal connector 40 in a top edge gripping manner, and The interference between the working path of the terminator 40 in the top edge grasping mode and the remaining one supporting rod 26 protruding to the horizontal direction can be avoided.
然而，習知批量式基板處理裝置封閉基板10之底部空間，妨礙端接器40之進入，僅基板10之上部空間露出，而採用頂部邊緣抓持方式之端接器40，進行裝載/卸載，因此，有基板10之間之間距P之間隔擴大之問題點。具體言之，由於頂部邊緣抓持方式之端接器40為了從基板10之上部下降抓持基板10之兩端部，必須確保最小限度之作業空間a，故此種限制使間距P之間隔擴大，而有使可裝載於舟皿20之基板10之個數減少的問題點。 However, the conventional batch-type substrate processing device closes the bottom space of the substrate 10 and prevents the entry of the terminator 40. Only the upper space of the substrate 10 is exposed, and the terminator 40 using the top edge grasping method is used for loading / unloading. Therefore, there is a problem that the interval P between the substrates 10 is increased. Specifically, in order to lower and hold the both ends of the substrate 10 from the upper portion of the substrate 10, the terminator 40 of the top edge grasping method must ensure a minimum working space a. Therefore, this restriction increases the interval of the pitch P. Another problem is that the number of substrates 10 that can be mounted on the boat 20 is reduced.
又，由於頂部邊緣抓持方式之端接器40為了抓持基板10而具有複雜之結構，歷經端接器40進入舟皿20內之步驟、端接器40下降而抓持基板10之步驟、及端接器40上升而卸載基板10之步驟，故有製程時間增加之問題點。 In addition, since the terminator 40 of the top edge grasping method has a complicated structure for grasping the substrate 10, the steps of the terminator 40 entering the boat 20, the step of the terminator 40 descending and grasping the substrate 10, And the step of ascending the terminator 40 to unload the substrate 10, there is a problem that the process time increases.
再者，由於頂部邊緣抓持方式之端接器40抓持基板10，故基板10之上部在裝載/卸載中露出至污染物質之可能性高，相對地端接器40與基板10之上部接觸，因此，有於基板10之上部產生擦痕之問題點。 Furthermore, since the terminator 40 of the top edge gripping method holds the substrate 10, the upper part of the substrate 10 is highly likely to be exposed to contamination during loading / unloading, and the terminator 40 is relatively in contact with the upper part of the substrate 10 Therefore, there is a problem that a scratch is generated on the upper portion of the substrate 10.
專利文獻1 韓國登錄專利公報第772462號 Patent Document 1 Korean Registered Patent Gazette No. 772462
是故，本發明係為解決上述習知技術之諸問題點而創作之發明，其以提供可以底部舉起(bottom-lift)方式處理載置於環支持器上之基板之批量式基板處理裝置為目的。 Therefore, the present invention is an invention created to solve the problems of the above-mentioned conventional technologies. It provides a batch-type substrate processing device capable of bottom-lifting a substrate placed on a ring holder. for purpose.
又，本發明之目的係提供一種批量式基板處理裝置為目的，該批量式基板處理裝置係減少基板間之間距，使裝載於舟皿之基板之個數增加，藉此，可使每單位製程之基板之處理量增加。 In addition, the object of the present invention is to provide a batch type substrate processing apparatus which reduces the distance between substrates and increases the number of substrates loaded on a boat, thereby enabling each unit process The throughput of the substrate is increased.
再者，本發明以提供採用了構造簡單之端接器之批量式基板處理裝置為目的。 Furthermore, the present invention aims to provide a batch type substrate processing apparatus using a terminator having a simple structure.
此外，本發明以提供使基板之裝載及卸載時間減少而使製程時間顯著地減少之批量式基板處理裝置為目的。 In addition, the present invention aims to provide a batch-type substrate processing apparatus that reduces substrate loading and unloading time and significantly reduces process time.
為達成上述目的，本發明一實施形態之批量式基板處理裝置係包含有可將複數基板上下積層來裝載之舟皿的批量式基板處理裝置，其特徵在於包含有環支持器、支撐桿及端接器，該環支持器(ring holder)係支撐基板之底部而可載置基板；該支撐桿係從舟皿之垂直框架突出配置，並支撐環支持器之底部而可載置環支持器；該端接器(end effector)係從環支持器之外周面之外側佔有與環支持器同 一平面上之空間並且進入舟皿，支撐基板之底部以底部舉起(bottom-lift)方式將基板裝載於舟皿或從舟皿進行卸載。 In order to achieve the above object, a batch-type substrate processing apparatus according to an embodiment of the present invention is a batch-type substrate processing apparatus including a boat capable of laminating a plurality of substrates on top of each other, and is characterized in that it includes a ring holder, a support rod and an end Connector, the ring holder supports the bottom of the substrate and can be placed on the substrate; the support rod is protrudingly arranged from the vertical frame of the boat, and supports the bottom of the ring holder to be placed on the ring holder; The end effector is the same as the ring support from the outer surface of the ring support. The space on a flat surface enters the boat, and the bottom of the supporting substrate is loaded into the boat or unloaded from the boat in a bottom-lift manner.
又，為達成上述目的，本發明一實施形態之批量式基板處理裝置係包含有可將複數基板上下積層來裝載之舟皿的批量式基板處理裝置，其特徵在於包含有環支持器、支撐桿及端接器，該環支持器(ring holder)係支撐基板之底部而可載置基板；該支撐桿係從舟皿之垂直框架突出配置，並分割成91°至150°之間隔而可以3點支撐方式載置環支持器；該端接器(end effector)係從環支持器之外周面之外側佔有與環支持器同一平面上之空間並且進入舟皿，支撐基板之底部以底部舉起(bottom-lift)方式將基板裝載於舟皿或從舟皿進行卸載。 In order to achieve the above-mentioned object, a batch type substrate processing apparatus according to an embodiment of the present invention is a batch type substrate processing apparatus including a boat capable of laminating a plurality of substrates on top of each other, and is characterized in that it includes a ring holder and a support rod. And a terminator, the ring holder supports the bottom of the substrate and can be placed on the substrate; the support rod is protruded from the vertical frame of the boat and is divided into 91 ° to 150 ° intervals. The ring support is placed on the point support; the end effector occupies the space on the same plane as the ring support from the outside of the outer surface of the ring support and enters the boat. The bottom of the support substrate is lifted at the bottom. (bottom-lift) method for loading or unloading a substrate onto a boat.
根據如此構成之本發明，具有可以底部舉起(bottom-lift)方式處理載置於環支持器上之基板的效果。 The present invention thus constituted has the effect that the substrate placed on the ring holder can be processed in a bottom-lift manner.
又，本發明具有下述效果，前述效果係藉減少基板間之間距而使裝載於舟皿之基板之個數增加，可使每單位製程之基板之處理量增加。 In addition, the present invention has the following effects. The aforementioned effect is to increase the number of substrates mounted on the boat by reducing the space between the substrates, and to increase the throughput of the substrate per unit process.
再者，本發明具有可採用構造簡單之端接器之效果。 Furthermore, the present invention has the effect that a terminator with a simple structure can be used.
又，本發明具有使基板之裝載及卸載時間減少而使製程時間顯著性地減少之效果。 In addition, the present invention has the effect of reducing the substrate loading and unloading time and significantly reducing the process time.
此外，本發明具有藉以最適當化之大小之環支持器支撐大面積基板而防止基板之撓曲的效果。 In addition, the present invention has the effect of preventing the substrate from being flexed by supporting a large-area substrate with a ring holder of an optimal size.
5‧‧‧前面開放部 5‧‧‧ front open section
10‧‧‧基板 10‧‧‧ substrate
100‧‧‧批量式基板處理裝置 100‧‧‧ batch type substrate processing device
20，200‧‧‧晶舟 20,200 ‧‧‧ Crystal Boat
22，24，220，240‧‧‧垂直框架 22, 24, 220, 240 ‧‧‧ vertical frame
26，260，260’，260”‧‧‧支撐桿 26,260,260 ’, 260” ‧‧‧Support rod
28‧‧‧避免溝部 28‧‧‧ Avoid the groove
30，300‧‧‧環支持器 30,300‧‧‧Ring Supporter
40‧‧‧頂部邊緣抓持方式之端接器 40‧‧‧ Terminator with top edge grip
262‧‧‧段差 262‧‧‧step difference
400‧‧‧底部舉起方式之端接器 400‧‧‧ Terminator with bottom lift
A，B‧‧‧角度 A, B‧‧‧ angle
a‧‧‧作業空間 a‧‧‧working space
C‧‧‧中心點 C‧‧‧center
d1‧‧‧端接器之兩內側面間之距離 d1‧‧‧The distance between the two inner sides of the terminator
d2‧‧‧端接器之兩外側面間之距離 d2‧‧‧Distance between the two outer sides of the terminator
P‧‧‧間距 P‧‧‧Pitch
R‧‧‧高度 R‧‧‧ height
圖1係顯示習知批量式基板處理裝置之立體圖。 FIG. 1 is a perspective view showing a conventional batch type substrate processing apparatus.
圖2係習知批量式基板處理裝置之平面圖及截面圖。 2 is a plan view and a cross-sectional view of a conventional batch type substrate processing apparatus.
圖3係顯示本發明一實施形態之批量式基板處理裝置之立體圖。 FIG. 3 is a perspective view showing a batch type substrate processing apparatus according to an embodiment of the present invention.
圖4係本發明一實施形態之批量式基板處理裝置之平面圖及截面圖。 4 is a plan view and a cross-sectional view of a batch type substrate processing apparatus according to an embodiment of the present invention.
圖5係顯示本發明另一實施形態之批量式基板處理裝置之立體圖。 FIG. 5 is a perspective view showing a batch type substrate processing apparatus according to another embodiment of the present invention.
圖6係本發明另一實施形態之批量式基板處理裝置之平面圖及截面圖。 6 is a plan view and a cross-sectional view of a batch-type substrate processing apparatus according to another embodiment of the present invention.
後述之關於本發明之詳細說明參照可實施本發明之特定實施形態為例而顯示之附加圖式。為了使該業者可實施本發明而充分地詳細說明該等實施形態。雖然本發明之多種實施形態相互不同，但務必理解不需相互排斥。舉例言之，記載於此之特定形狀、構造及特性與一實施形態相關，可在不脫離本發明之精神及範圍之範圍內以其他實施形態實現。又，務必理解各揭示之實施形態之個別構成要件之位置或配置可在不脫離本發明之精神及範圍之範圍內變更。因而，後述之詳細說明並非被採納作為限定之說明，本發明之範圍係於適當地說明時，僅以與其請求項主張均等之所有範圍一同添附之請求項限定。在圖示中， 類似之參照標號在各方面指同一或類似之功能，長度、面積及厚度等與其形態亦可為方便說明而誇張呈現。 The detailed description of the present invention described later is shown with reference to additional drawings in which specific embodiments of the present invention can be implemented as an example. In order to enable the practitioner to implement the present invention, these embodiments are fully described in detail. Although the various embodiments of the present invention are different from each other, it is important to understand that they need not be mutually exclusive. For example, the specific shape, structure, and characteristics described here are related to one embodiment, and can be implemented in other embodiments without departing from the spirit and scope of the present invention. It is also important to understand that the position or arrangement of individual constituent elements of each disclosed embodiment can be changed without departing from the spirit and scope of the invention. Therefore, the detailed description to be described later is not adopted as a limited description, and the scope of the present invention, when properly described, is limited only by the claims appended with all the scopes with equal claims. In the illustration, Similar reference numerals refer to the same or similar functions in all aspects, and the length, area, and thickness and their forms can also be exaggerated for convenience of explanation.
在本說明中，基板可以包含半導體基板、用於LED、LCD等顯示裝置之基板、太陽電池基板等之意思理解。 In this description, a substrate may include a semiconductor substrate, a substrate for a display device such as an LED, an LCD, a solar cell substrate, and the like.
圖3係顯示本發明一實施形態之批量式基板處理裝置之立體圖，圖4係本發明一實施形態之批量式基板處理裝置之平面圖及截面圖。 FIG. 3 is a perspective view showing a batch-type substrate processing apparatus according to an embodiment of the present invention, and FIG. 4 is a plan view and a sectional view of the batch-type substrate processing apparatus according to an embodiment of the present invention.
參照圖3，本發明一實施形態之批量式基板處理裝置100包含舟皿200、環支持器(ring holder)300、底部舉起(bottom-lift)方式之端接器(end effector)400。 3, a batch type substrate processing apparatus 100 according to an embodiment of the present invention includes a boat 200, a ring holder 300, and a bottom-lift end effector 400.
舟皿200係可將複數基板10上下積層來裝載之批量式基板處理裝置用舟皿。舟皿200之材質可包含石英(quartz)、碳化矽(SiC)、石墨(graphite)、碳複合材(carbon composite)、矽(Si)中之至少任一個。 The boat 200 is a boat for a batch type substrate processing apparatus in which a plurality of substrates 10 can be stacked on top of each other. The material of the boat 200 may include at least any one of quartz, silicon carbide (SiC), graphite, graphite, carbon composite, and silicon (Si).
舟皿200具有形成柱狀之複數垂直框架220、240，較佳為可包含3個垂直框架220、240。以下，將舟皿200之垂直框架220、240假定為3個來說明。 The boat 200 has a plurality of vertical frames 220 and 240 formed in a column shape, and preferably includes three vertical frames 220 and 240. In the following, three vertical frames 220 and 240 of the boat 200 are assumed to be described.
垂直框架220、240對舟皿200之截面圓周上佔半圓而設，垂直框架220、240未佔有之圓周上之部份構成可容許端接器400之***之前面開放部5而可容許基板10之裝載/卸載。 The vertical frames 220 and 240 occupy a semicircle on the circumference of the cross section of the boat 200. The unoccupied portions of the vertical frames 220 and 240 constitute a front opening 5 allowing the insertion of the terminator 400 and a substrate 10 Load / unload.
另一方面，在圖3及圖4，顯示有以位於與端接器 400之作業路徑形成水平之方向的垂直框架240為基準，與剩餘之2個垂直框架220之角度A為91°，但不限於此，亦可在容許端接器400***晶舟200內之範圍內，垂直框架240與垂直框架220之角度A構成91°至120°來配置。詳細之內容在圖5及圖6後述。 On the other hand, in FIGS. 3 and 4, there is shown The working path of 400 forms the vertical frame 240 in the horizontal direction as a reference, and the angle A with the remaining two vertical frames 220 is 91 °, but it is not limited to this, and it can also be within a range that allows the terminator 400 to be inserted into the wafer boat 200. Inside, the angle A between the vertical frame 240 and the vertical frame 220 forms 91 ° to 120 °. The details are described later in FIGS. 5 and 6.
於各垂直框架220、240在舟皿200之內側突出至同一平面上之支撐桿(support rod)260可以一定之高度間隔配置。 Support rods 260 protruding from each of the vertical frames 220 and 240 to the same plane on the inside of the boat 200 may be arranged at certain height intervals.
支撐桿260支撐環支持器300之底部而可載置環支持器300。支撐桿260分割成91°至150°之間隔，以3點支撐方式支撐環支持器300，藉此，環支持器300可載置於支撐桿260上。 The support rod 260 supports the bottom of the ring holder 300 to mount the ring holder 300. The support rod 260 is divided into intervals of 91 ° to 150 ° to support the ring holder 300 in a three-point support manner, whereby the ring holder 300 can be placed on the support rod 260.
於支撐桿260之端部可形成段差260，而可將環支持器300以更固定之方式載置。 A step 260 can be formed at the end of the support rod 260, and the ring holder 300 can be placed in a more fixed manner.
當以超高溫(約1200至1350℃)將基板10進行熱處理時，在基板10及環支持器300有產生預定之下垂現象之可能性。因而，宜以等分成120°之方式將環支持器300進行3點支撐，支撐桿260得以均等地支撐環支持器300及環支持器300之上部之基板10的重量。 When the substrate 10 is heat-treated at an extremely high temperature (approximately 1200 to 1350 ° C.), there is a possibility that a predetermined sagging phenomenon may occur in the substrate 10 and the ring holder 300. Therefore, it is preferable to support the ring holder 300 at three points in an equal division manner of 120 °, so that the support rod 260 can evenly support the weight of the ring holder 300 and the base plate 10 on the upper portion of the ring holder 300.
然而，以中溫至高溫(約500至800℃)將基板10進行熱處理時，由於在基板10及環支持器300可稍微減少下垂現象，故可緩和以等分成120°之方式將環支持器300進行3點支撐之必要性。因而，以中溫至高溫進行熱處理時，可將支撐桿260與環支持器300接觸之3點之間隔分割成91°至 150°。具體言之，從位於與端接器400之作業路徑形成水平之方向之垂直框架240朝中心點C之方向突出之支撐桿260’與環支持器300接觸之點跟從相鄰之2個垂直框架220突出之支撐桿260”與環支持器300接觸之點之間的角度可為91°至150°。 However, when the substrate 10 is heat-treated at a medium temperature to a high temperature (about 500 to 800 ° C), since the sagging phenomenon can be slightly reduced on the substrate 10 and the ring holder 300, the ring holder can be gently divided into equal 120 degrees. 300 Necessity of 3-point support. Therefore, when heat treatment is performed at a medium temperature to a high temperature, the interval between the three points where the support rod 260 and the ring holder 300 contact can be divided into 91 ° to 150 °. Specifically, the point at which the support rod 260 'protruding from the vertical frame 240 which is located in a horizontal direction with the working path of the terminator 400 toward the center point C and contacting the ring holder 300 follows the two adjacent vertical frames. The angle between the 220 protruding support rod 260 "and the contact point of the ring holder 300 may be 91 ° to 150 °.
環支持器300係用於防止在高溫熱處理過程基板之矽晶格之結晶缺陷亦即滑移之產生，並用於支撐大口徑化(300mm、450mm)之基板10之底部而防止在構造上下垂。為因應高溫環境與反應製程之化學環境，環支持器300可以陶瓷系、例如碳化矽(SiC)形成，除此之外，可含有石英(quartz)、石墨(graphite)、碳複合材(carbon composite)、或矽(Si)中之至少任一個。 The ring supporter 300 is used to prevent the occurrence of crystal defects of the silicon lattice of the substrate during the high temperature heat treatment, that is, slippage, and is used to support the bottom of the substrate 10 with a large diameter (300mm, 450mm) to prevent the structure from sagging. In order to respond to the high-temperature environment and the chemical environment of the reaction process, the ring holder 300 may be formed of ceramics, such as silicon carbide (SiC). In addition, it may contain quartz, graphite, and carbon composite. ), Or at least one of silicon (Si).
為穩定地支撐基板10，環支持器300宜配置成中心軸[或中心點C]一致。在此，中心軸[或中心點C]可理解為環支持器300之重心之法線[或重心點(原點)]、或基板10之重心之法線[或重心點(原點)]。另一方面，為使環支持器300有效地均等支撐基板10全面積，環支持器300之直徑可為基板10之直徑之0.6至0.8倍。特別是為使環支持器300之內側及外側各支撐基板10之1/2面積，環支持器300之直徑宜為基板10之直徑之0.7倍，但未必限於此，可考慮製程溫度、基板之大小及強度等來適當地變更環支持器300之直徑。 In order to stably support the substrate 10, the ring holder 300 should be arranged so that the central axis [or the central point C] is uniform. Here, the center axis [or center point C] can be understood as the normal line [or center of gravity (origin)] of the center of gravity of the ring holder 300, or the normal line [or center of gravity (original point)] of the center of gravity of the substrate 10. . On the other hand, in order for the ring holder 300 to effectively and uniformly support the entire area of the substrate 10, the diameter of the ring holder 300 may be 0.6 to 0.8 times the diameter of the substrate 10. In particular, in order to make 1/2 of the area of the substrate 10 on the inner and outer sides of the ring holder 300, the diameter of the ring holder 300 should be 0.7 times the diameter of the substrate 10, but it is not necessarily limited to this. The diameter and the diameter of the ring holder 300 are appropriately changed according to the size and strength.
又，基板10之直徑為300mm時，環支持器300之環寬度可為2至25mm，較佳為環寬度可為2至5mm。當將環支持器300之直徑(外徑)採用為基板10之直徑之0.7倍即 210mm時，將環支持器之300之環寬度設定為2至25mm，藉此，基板10與環支持器300接觸之面積之比例可為約1.85至20.56%，將環支持器300之環寬度設定成2至5mm，藉此，基板10與環支持器300接觸之面積之比例可為約1.85至4.56%。另一實施形態係當將環支持器300之直徑(外徑)採用199mm時，藉將環支持器300之環寬度設定成2至25mm，基板10與環支持器300接觸之面積之比例可為約1.85至15.56%，將環支持器300之環寬度設定成2至5mm，基板10與環支持器300接觸之面積之比例可為約1.75至4.31%。因而，當將環支持器300之環寬度設定成2至5mm時，由於僅基板10之低於約5%之水準的面積與環支持器300接觸，故具有可防止基板10之下垂並且可使基板10之下部之擦痕更減少的優點。 When the diameter of the substrate 10 is 300 mm, the ring width of the ring holder 300 may be 2 to 25 mm, and preferably, the ring width may be 2 to 5 mm. When the diameter (outer diameter) of the ring holder 300 is 0.7 times the diameter of the substrate 10, that is, At 210 mm, the ring width of the ring holder 300 is set to 2 to 25 mm, whereby the ratio of the area of the substrate 10 and the ring holder 300 contact area can be about 1.85 to 20.56%. 2 to 5 mm, whereby the ratio of the area where the substrate 10 contacts the ring holder 300 can be about 1.85 to 4.56%. In another embodiment, when the diameter (outer diameter) of the ring holder 300 is 199 mm, by setting the ring width of the ring holder 300 to 2 to 25 mm, the ratio of the area of the substrate 10 and the ring holder 300 contacting can be About 1.85 to 15.56%, the ring width of the ring holder 300 is set to 2 to 5mm, and the ratio of the area where the substrate 10 contacts the ring holder 300 may be about 1.75 to 4.31%. Therefore, when the ring width of the ring holder 300 is set to 2 to 5 mm, since only the area of the substrate 10 below the level of about 5% is in contact with the ring holder 300, it is possible to prevent the substrate 10 from sagging and make the substrate 10 sag. There is an advantage that the scratches on the lower portion of the substrate 10 are further reduced.
另一方面，於基板10之直徑為450mm時，亦調整環支持器300之環寬度，可防止基板10之下垂，並且可在使基板10之下部之擦痕減少之範圍調整基板10與環支持器300接觸之面積之比例。 On the other hand, when the diameter of the substrate 10 is 450 mm, the ring width of the ring holder 300 is also adjusted to prevent the substrate 10 from sagging, and the substrate 10 and the ring support can be adjusted in a range that reduces the scratches on the lower portion of the substrate 10 The ratio of the area contacted by the device 300.
端接器400可以底部舉起方式將基板10裝載於舟皿200，或從舟皿200進行卸載。 The terminator 400 can load the substrate 10 to or from the boat 200 in a bottom-lift manner.
再者，參照圖3及圖4，本發明一實施形態之底部舉起方式之端接器400從環支持器300外周面之外側佔有與環支持器300同一平面上之空間，並進入舟皿200，支撐基板10之底部，而可進行基板100之裝載/卸載。於底部舉起方式之端接器400進入舟皿200之內部時，為避免與環支持 器300之干擾，端接器400可具有U形叉形態。又，如圖4(b)之平面圖所示，因端接器400具有U形叉形態，故與從垂直框架240突出之支撐桿260’之干擾問題亦可自然地解決。又，如圖4(b)之截面圖所示，端接器400高於支撐桿260”，而不與支撐桿260”重疊，另一方面，以不與環支持器300重疊之狀態之高度進入舟皿200之內部，故亦可解決與從2個垂直框架220突出之支撐桿260”之干擾問題。亦即，由於端接器400高於從2個垂直框架220突出之支撐桿260”，故可解決干擾問題。 Further, referring to FIG. 3 and FIG. 4, the terminator 400 of the bottom lifting method according to an embodiment of the present invention occupies a space on the same plane as the ring holder 300 from the outer side of the outer peripheral surface of the ring holder 300 and enters the boat. 200, supporting the bottom of the substrate 10, and loading / unloading of the substrate 100 can be performed. When the terminator 400 in the bottom lifting mode enters the interior of the boat 200, In the interference of the device 300, the terminator 400 may have a U-shaped fork shape. Also, as shown in the plan view of FIG. 4 (b), since the terminator 400 has a U-shaped fork shape, the problem of interference with the support bar 260 'protruding from the vertical frame 240 can also be naturally solved. Also, as shown in the cross-sectional view of FIG. 4 (b), the terminator 400 is higher than the support rod 260 "and does not overlap with the support rod 260", and on the other hand, at a height that does not overlap with the ring holder 300 Entering the inside of the boat 200, it can also solve the problem of interference with the support bar 260 "protruding from the two vertical frames 220. That is, since the terminator 400 is higher than the support bar 260" protruding from the two vertical frames 220 , So it can solve the problem of interference.
又，為可避免與環支持器300之干擾，並且穩定且有效地支撐基板10，端接器400之兩內側面間之距離d1宜大於環支持器300之直徑，端接器400之兩外側面間之距離d2宜小於基板10之直徑。 In addition, in order to avoid interference with the ring holder 300 and to support the substrate 10 stably and effectively, the distance d1 between the two inner sides of the terminator 400 should be larger than the diameter of the ring holder 300 and two outside of the terminator 400 The distance d2 between the sides is preferably smaller than the diameter of the substrate 10.
一實施形態係基板10之直徑為300mm時，端接器400之兩內側面間之距離d1採用200至220mm之範圍，兩外側面間之距離d2採用244至260mm之範圍，可避免與環支持器300及2個垂直框架220之干擾，而可輕易裝載/卸載基板10。 In one embodiment, when the diameter of the substrate 10 is 300 mm, the distance d1 between the two inner sides of the terminator 400 is in the range of 200 to 220 mm, and the distance d2 between the two outer sides is in the range of 244 to 260 mm. The substrate 300 can be easily loaded / unloaded by the interference of the device 300 and the two vertical frames 220.
另一實施形態係基板10之直徑為450mm時，端接器400之兩內側面間之距離d1採用300至330mm之範圍，兩外側面間之距離d2採用366至390mm之範圍，可避免與環支持器300及2個垂直框架220之干擾，而可輕易裝載/卸載基板10。 In another embodiment, when the diameter of the substrate 10 is 450 mm, the distance d1 between the two inner sides of the terminator 400 is in the range of 300 to 330 mm, and the distance d2 between the two outer sides is in the range of 366 to 390 mm. Interference between the holder 300 and the two vertical frames 220 makes it easy to load / unload the substrate 10.
圖5係顯示本發明另一實施形態之批量式基板處 理裝置之立體圖，圖6係本發明另一實施形態之批量式基板處理裝置之平面圖及截面圖。在以下之圖5及圖6之說明中，僅就與上述圖3及圖4之說明之不同點記述，省略重複之說明。 FIG. 5 is a diagram showing a batch type substrate according to another embodiment of the present invention. 6 is a plan view and a cross-sectional view of a batch-type substrate processing apparatus according to another embodiment of the present invention. In the following description of FIG. 5 and FIG. 6, only differences from the above-mentioned description of FIG. 3 and FIG. 4 are described, and repeated description is omitted.
參照圖5及圖6，可確認從垂直框架220突出之支撐桿260”之方向朝向中心點C。圖3及圖4之批量式基板處理裝置100之方式係於固定垂直框架240與2個垂直框架220之角度A後[一例為91°]，調整從垂直框架220突出之支撐桿260”之突出角度，而在從垂直框架240朝中心點C之方向突出之支撐桿260’與環支持器300接觸之點跟從相鄰之2個垂直框架220突出之支撐桿260”與環支持器300接觸之點之間的角度B為91°至150°之範圍，進行環支持器300之3點支撐。即，從垂直框架220突出之支撐桿260”之方向亦可不朝向中心點C。 5 and 6, it can be confirmed that the direction of the supporting rod 260 "protruding from the vertical frame 220 is toward the center point C. The method of the batch type substrate processing apparatus 100 of FIGS. 3 and 4 is to fix the vertical frame 240 and two vertical After the angle A of the frame 220 [91 ° for one example], adjust the protrusion angle of the support rod 260 "protruding from the vertical frame 220, and the support rod 260 'and the ring support protruding from the vertical frame 240 toward the center point C The angle B between the contact point of 300 and the supporting rod 260 ″ protruding from the adjacent two vertical frames 220 and the contact point of the ring holder 300 is in the range of 91 ° to 150 °, and the three points of the ring holder 300 are supported. That is, the direction of the support bar 260 ″ protruding from the vertical frame 220 may not be directed toward the center point C.
另一方面，圖5及圖6之批量式基板處理裝置100’由於從垂直框架220突出之支撐桿260”之方向朝向中心點C，故僅調整垂直框架240與2個垂直框架220之角度A，便可調整支撐桿260與環支持器300接觸之點之角度B。惟，此時，當角度(A或B)超過120°時，端接器400進入舟皿200時，有產生垂直框架220或支撐桿260”與端接器400之間之干擾的可能性，故可將角度(A或B)維持在91°至120°，較佳為維持105°。 On the other hand, since the batch type substrate processing apparatus 100 ′ of FIGS. 5 and 6 is directed toward the center point C from the direction of the support bar 260 ″ protruding from the vertical frame 220, only the angle A between the vertical frame 240 and the two vertical frames 220 is adjusted. , You can adjust the angle B of the point where the support rod 260 contacts the ring holder 300. However, at this time, when the angle (A or B) exceeds 120 °, when the terminator 400 enters the boat 200, a vertical frame is generated The possibility of interference between 220 or support bar 260 "and the terminator 400, so the angle (A or B) can be maintained at 91 ° to 120 °, preferably 105 °.
在以下，參照圖4及圖6，說明採用了底部舉起方 式之端接器400之批量式基板處理裝置100之動作過程。圖4及圖6顯示基板10之卸載過程，裝載過程可理解為將卸載過程倒過來進行之過程。 Hereinafter, the bottom lifter will be described with reference to FIGS. 4 and 6. The operation process of the batch-type substrate processing apparatus 100 of the type terminator 400. FIG. 4 and FIG. 6 show the unloading process of the substrate 10. The loading process can be understood as a process in which the unloading process is reversed.
參照圖4(a)及圖6(a)，將環支持器300載置於從垂直框架220、240突出配置之3個支撐桿260之端部上，且以環支持器300與中心軸[或中心點C]一致之方式將基板10載置於環支持器300之上部。 Referring to FIGS. 4 (a) and 6 (a), the ring holder 300 is placed on the ends of three support rods 260 protruding from the vertical frames 220 and 240, and the ring holder 300 and the central axis are [ Or center point C] The substrate 10 is placed on the upper portion of the ring holder 300 in a consistent manner.
接著，參照圖4(b)及圖6(b)，底部舉起方式之端接器400通過舟皿200之前面開放部5進入。此時，由於端接器400具有U形叉形態而可包圍環支持器300之外周面，從環支持器300之外周面之外側佔有同一平面上之空間且高於從2個垂直框架220所突出之支撐桿260”，故可避免與環支持器300或支撐桿260”之干擾並進入而位於基板10之底部。又，端接器400可舉起基板10，而使基板10與環支持器300隔開預定高度R。 Next, referring to FIGS. 4 (b) and 6 (b), the terminator 400 of the bottom lifting mode enters through the front opening portion 5 of the boat 200. At this time, since the terminator 400 has a U-shaped fork shape, it can surround the outer peripheral surface of the ring holder 300, occupying the same plane space from the outer side of the outer peripheral surface of the ring holder 300, and higher than that from the two vertical frames 220 The protruding support bar 260 ″ is located at the bottom of the base plate 10 so as to avoid interference with the ring holder 300 or the support bar 260 ″ and enter. In addition, the terminator 400 can lift the substrate 10 to separate the substrate 10 from the ring holder 300 by a predetermined height R.
接著，參照圖4(c)及圖6(c)，端接器400可在僅支撐基板10之狀態下，從舟皿200進行卸載。 4 (c) and 6 (c), the terminator 400 can be unloaded from the boat 200 while only supporting the substrate 10.
如此，藉採用本發明之底部舉起方式之端接器400，具有即使僅基板10與環支持器300隔開之高度R亦可進行基板10之裝載/卸載之優點。亦即，頂部邊緣抓持方式的批量式基板處理裝置連從基板之上部下降而用以抓持基板之兩端部之最小限度的作業空間a、端接器之厚度、基板之厚度及環支持器之高度也考慮而形成間距P間隔，與此頂部邊緣抓持方式的批量式基板處理裝置比較，本發明之底部 舉起方式之批量式基板處理裝置可僅考慮基板與環支持器可隔開之高度R、基板之厚度及環支持器之高度，形成間距P間隔，故最終可確保大幅減少之間距P間隔。因而，藉使裝載於舟皿之基板之個數增加，具有可使每單位製程之基板之處理量增加的優點。 In this way, the termination 400 using the bottom lifting method of the present invention has the advantage that the substrate 10 can be loaded / unloaded even at the height R separated by the substrate 10 and the ring holder 300. That is, a batch type substrate processing apparatus with a top edge gripping method is connected with a minimum working space a, which is lowered from the upper part of the substrate to hold both ends of the substrate, the thickness of the terminator, the thickness of the substrate, and the ring support. The height of the device is also considered to form a pitch P interval. Compared with a batch-type substrate processing device with a top edge holding method, the bottom of the present invention The batch type substrate processing apparatus of the lifting method can only consider the height R that the substrate can be separated from the ring holder, the thickness of the substrate, and the height of the ring holder to form the interval P interval, so the interval P interval can be greatly reduced in the end. Therefore, by increasing the number of substrates mounted on the boat, there is an advantage that the throughput of the substrate per unit process can be increased.
又，由於可將用以抓持基板之具有複雜結構的頂部邊緣方式之端接器改換成底部舉起方式之端接器，故具有下述優點，前述優點係構造簡單，且使用底部舉起方式之端接器，可使基板之裝載及卸載時間減少，而可使製程時間顯著地減少。 In addition, since the top edge type terminator having a complicated structure for holding the substrate can be replaced with a bottom end type terminator, it has the following advantages. The foregoing advantages are simple in structure and the use of a bottom lifter. The termination method of the lifting method can reduce the loading and unloading time of the substrate, and can significantly reduce the process time.
本發明如上述舉較佳之實施形態為例，進行了圖示及說明，但不限於上述實施形態，在不脫離本發明之精神之範圍內，具有該發明所屬之技術領域之一般知識者可進行多種之變形及變更。該種變形例及變更例屬於本發明與附上之申請專利範圍之範圍內。 The present invention has been illustrated and described by taking the preferred embodiment as an example, but it is not limited to the above embodiment. Those who have ordinary knowledge in the technical field to which the invention belongs can do so without departing from the spirit of the invention. Variations and changes. Such variations and modifications fall within the scope of the present invention and the attached patent applications.
5‧‧‧前面開放部 5‧‧‧ front open section
10‧‧‧基板 10‧‧‧ substrate
100‧‧‧批量式基板處理裝置 100‧‧‧ batch type substrate processing device
200‧‧‧晶舟 200‧‧‧ Crystal Boat
220，240‧‧‧垂直框架 220, 240‧‧‧ vertical frame
260，260’，260”‧‧‧支撐桿 260, 260 ’, 260” ‧‧‧ support rod
262‧‧‧段差 262‧‧‧step difference
300‧‧‧環支持器 300‧‧‧Ring Supporter
400‧‧‧底部舉起方式之端接器 400‧‧‧ Terminator with bottom lift
d1‧‧‧端接器之兩內側面間之距離 d1‧‧‧The distance between the two inner sides of the terminator
d2‧‧‧端接器之兩外側面間之距離 d2‧‧‧Distance between the two outer sides of the terminator
Claims (11)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120125073A KR101990533B1 (en) | 2012-11-06 | 2012-11-06 | Batch type semiconductor manufacturing device |
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| Publication Number | Publication Date |
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| TW201430992A TW201430992A (en) | 2014-08-01 |
| TWI612610B true TWI612610B (en) | 2018-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW102138236A TWI612610B (en) | 2012-11-06 | 2013-10-23 | Batch type substrate processing device |
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| JP (1) | JP6290585B2 (en) |
| KR (1) | KR101990533B1 (en) |
| CN (1) | CN103811380B (en) |
| TW (1) | TWI612610B (en) |
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| KR102000204B1 (en) * | 2018-09-20 | 2019-07-16 | 주식회사 와이컴 | Multi Stage Support and Batch Type Apparatus for Treatment |
| US20200373190A1 (en) * | 2019-05-20 | 2020-11-26 | Applied Materials, Inc. | Process kit enclosure system |
| JP7347267B2 (en) * | 2020-03-03 | 2023-09-20 | 三菱電機株式会社 | semiconductor manufacturing equipment |
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| TW201214610A (en) * | 2010-09-14 | 2012-04-01 | Hitachi Int Electric Inc | Substrate carrying mechanism, substrate processing apparatus, and semiconductor device manufacturing method |
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| KR20000073974A (en) * | 1999-05-17 | 2000-12-05 | 윤종용 | Wafer boat |
| US6287112B1 (en) * | 2000-03-30 | 2001-09-11 | Asm International, N.V. | Wafer boat |
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| KR100657502B1 (en) * | 2005-04-25 | 2006-12-20 | 주식회사 테라세미콘 | Wafer-Holder Manufaturing Method and Wafer-Holder-Boat for Semiconductor |
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| TW201214610A (en) * | 2010-09-14 | 2012-04-01 | Hitachi Int Electric Inc | Substrate carrying mechanism, substrate processing apparatus, and semiconductor device manufacturing method |
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| KR101990533B1 (en) | 2019-09-30 |
| JP2014093522A (en) | 2014-05-19 |
| CN103811380A (en) | 2014-05-21 |
| JP6290585B2 (en) | 2018-03-07 |
| TW201430992A (en) | 2014-08-01 |
| KR20140058270A (en) | 2014-05-14 |
| CN103811380B (en) | 2017-12-22 |
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