TWI607362B - Sensing device and detecting method - Google Patents
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- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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Description
本發明係關於一種感測裝置及偵測方法,特別是一種觸碰面板的感測裝置及偵測方法。The invention relates to a sensing device and a detecting method, in particular to a sensing device and a detecting method of a touch panel.
隨著科技的發展,面板觸控的技術越趨成熟。以目前來說,面板觸控技術主要分為自容式投射式電容觸控技術與互容式投射式電容觸控技術。自容式投射式電容觸控技術係將電極充電並對其作電容值偵測。由於手指觸控時所偵測到的電容值與未觸碰的電容值不同,依據電容值的變化,便可以得知手指觸碰的座標資訊。互容式投射式電容觸控技術係將電極分為兩組,先對一組電極充電,再對另一組電極作電容值的偵測。由於手指觸控所偵測到的電容值與未觸碰的電容值不同,依據兩組電極的相對位置關係,進而得到手指觸碰的座標資訊。然而不管是自容式投射式電容觸控技術或互容式投射式電容觸控技術,僅能偵測到觸碰的位置,卻無法偵測到觸碰時按壓的力量。With the development of technology, the technology of panel touch has become more mature. At present, panel touch technology is mainly divided into self-capacitive projected capacitive touch technology and mutual capacitive projected capacitive touch technology. Self-capacitive projected capacitive touch technology charges the electrodes and detects their capacitance values. Since the capacitance value detected by the finger touch is different from the untouched capacitance value, the coordinate information touched by the finger can be known according to the change of the capacitance value. The mutual capacitive projection capacitive touch technology divides the electrodes into two groups, first charging one set of electrodes, and then detecting the capacitance value of the other set of electrodes. Since the capacitance value detected by the finger touch is different from the untouched capacitance value, the coordinate information of the finger touch is obtained according to the relative positional relationship between the two groups of electrodes. However, whether it is self-capacitive projected capacitive touch technology or mutual capacitive projected capacitive touch technology, only the touch position can be detected, but the force of pressing when touched cannot be detected.
本發明提供一種感測裝置及偵測方法,可以偵測觸碰時的座標資訊以及按壓的力道大小。The invention provides a sensing device and a detecting method, which can detect coordinate information when touched and the strength of pressing force.
依據本發明之一實施例所提供的感測裝置,包含第一基板、第二基板、第一電極組、第二電極組及介電層。第一基板具有第一表面。第二基板位於第一基板上方。第一電極組位於第一表面且包含多個第一電極與多個第二電極。第二電極組位於第二基板且位於第一電極組上方。第二電極組包含多個第三電極與多個第四電極。介電層位於第一電極組與第二電極組之間。於觸控偵測時段內,第一電極接收第一驅動信號,第二電極處於第一運作模式。第三電極接收第二驅動信號,第四電極處於第二運作模式。於感壓偵測時段,第一電極接收第三驅動信號,第二電極處於第二運作模式。第三電極與第四電極均處於第三運作模式。A sensing device according to an embodiment of the invention includes a first substrate, a second substrate, a first electrode group, a second electrode group, and a dielectric layer. The first substrate has a first surface. The second substrate is located above the first substrate. The first electrode group is located on the first surface and includes a plurality of first electrodes and a plurality of second electrodes. The second electrode group is located on the second substrate and above the first electrode group. The second electrode group includes a plurality of third electrodes and a plurality of fourth electrodes. The dielectric layer is between the first electrode group and the second electrode group. During the touch detection period, the first electrode receives the first driving signal, and the second electrode is in the first operating mode. The third electrode receives the second drive signal and the fourth electrode is in the second mode of operation. During the pressure sensing detection period, the first electrode receives the third driving signal and the second electrode is in the second operating mode. The third electrode and the fourth electrode are both in the third mode of operation.
依據本發明之一實施例所提供的偵測方法,適於感測裝置。感測裝置包含第一電極組與第二電極組。第一電極組包含多個第一電極與多個第二電極。第二電極組包含多個第三電極與多個第四電極。偵測方法包含於觸控偵測時段中,提供第一驅動信號至第一電極,並使第二電極處於第一運作模式。於觸控偵測時段中,提供第二驅動信號至第三電極並使第四電極處於第二運作模式。於感壓偵測時段中,提供第三驅動信號至第一電極並使第二電極處於第二運作模式。於感壓偵測時段中,使第三電極與第四電極處於第三運作模式。A detection method according to an embodiment of the present invention is suitable for a sensing device. The sensing device includes a first electrode group and a second electrode group. The first electrode group includes a plurality of first electrodes and a plurality of second electrodes. The second electrode group includes a plurality of third electrodes and a plurality of fourth electrodes. The detecting method is included in the touch detection period, providing a first driving signal to the first electrode and placing the second electrode in the first operating mode. During the touch detection period, the second driving signal is supplied to the third electrode and the fourth electrode is in the second operation mode. During the pressure sensing detection period, a third driving signal is provided to the first electrode and the second electrode is in the second operating mode. During the pressure sensing period, the third electrode and the fourth electrode are in the third mode of operation.
綜合以上所述,本發明所提供的感測裝置及偵測方法,係以互容式的偵測方式,再分別於感壓偵測時段與觸控偵測時段中提供不同的操作方式,進而得以使感測裝置同時偵測觸碰時的座標資訊以及按壓的力道大小。In summary, the sensing device and the detecting method provided by the present invention provide different operating modes in the sensing detection period and the touch detection period, respectively, in a mutual capacitive detection manner. The sensing device can simultaneously detect the coordinate information at the time of the touch and the strength of the pressing force.
以上之關於本揭露內容之說明及以下之實施方式之說明係用以示範與解釋本發明之精神與原理,並且提供本發明之專利申請範圍更進一步之解釋。The above description of the disclosure and the following description of the embodiments of the present invention are intended to illustrate and explain the spirit and principles of the invention, and to provide further explanation of the scope of the invention.
以下在實施方式中詳細敘述本發明之詳細特徵以及優點,其內容足以使任何熟習相關技藝者了解本發明之技術內容並據以實施,且根據本說明書所揭露之內容、申請專利範圍及圖式,任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。以下之實施例係進一步詳細說明本發明之觀點,但非以任何觀點限制本發明之範疇。The detailed features and advantages of the present invention are set forth in the Detailed Description of the Detailed Description of the <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> </ RTI> <RTIgt; The objects and advantages associated with the present invention can be readily understood by those skilled in the art. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention.
請先參照表一,由表一所示的數據,可以得知採用自容式的感測方式與互容式的感測方式分別可以偵測到的電容變化量係為2.31%與3.24%。相較於自容式的感測方式,如表一所示,利用互容式的感測方式所偵測到的變化量係高於自容式的感測方式,也就是說,採用互容式的感測方式所得到的感測效果較為明顯。而本發明的感測裝置所採用的感測方式舉例係為互容式的感測方式。 表一 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> 電容(pF) </td><td> 自容式 </td><td> 互容式 </td></tr><tr><td> 觸控偵測 </td><td> 172.7 </td><td> 90.4 </td></tr><tr><td> 感壓偵測 </td><td> 176.7 </td><td> 93.3 </td></tr><tr><td> 電容變化量 </td><td> 2.31% </td><td> 3.24% </td></tr></TBODY></TABLE>Please refer to Table 1 first. From the data shown in Table 1, it can be known that the capacitance change detected by the self-capacitance sensing method and the mutual capacitance sensing method is 2.31% and 3.24%, respectively. Compared with the self-capacitance sensing method, as shown in Table 1, the change detected by the mutual capacitive sensing method is higher than the self-capacitive sensing method, that is, the mutual capacitance is adopted. The sensing effect obtained by the sensing method is more obvious. The sensing method adopted by the sensing device of the present invention is exemplified by a mutual capacitive sensing method. Table I <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> Capacitance (pF) </td><td> Self-contained</td><td> Mutual capacity </td></tr><tr><td> touch detection</td><td> 172.7 </td><td> 90.4 </td></tr><tr><td > Pressure Sensing Detection</td><td> 176.7 </td><td> 93.3 </td></tr><tr><td> Capacitance Change</td><td> 2.31% </td ><td> 3.24% </td></tr></TBODY></TABLE>
請一併參照圖1A、圖1B與圖1C。圖1A係依據本發明之一實施例所繪示的感測裝置的示意圖。圖1B與圖1C係依據本發明之一實施例分別繪示的第二電極組與第一電極組的俯視示意圖。如圖1A所示,感測裝置1包含第一基板10、第二基板11、第一電極組101、第二電極組111及介電層12。如圖1B與圖1C所示,第一電極組101包含多個第一電極101a~101c與多個第二電極101d~101e,第二電極組111包含多個第三電極111a~111c與多個第四電極111d~111e。第一電極101a~101c舉例係為依序排列,第二電極101d~101e舉例係為依序排列,第三電極111a~111c舉例係為依序排列,第四電極111d~111e舉例係為依序排列。於此實施例中,如圖1B與圖1C所示,第一電極101a通過第一電極連接部101a_1電性連接。第一電極101b通過第一電極連接部101b_1電性連接,第一電極101c通過第一電極連接部101c_1電性連接。第二電極101d通過第二電極連接部101d_1電性連接,第二電極101e通過第二電極連接部101e_1電性連接。而第三電極111a通過第三電極連接部111a_1電性連接,第三電極111b通過第三電極連接部111b_1電性連接,第三電極111c通過第三電極連接部111c_1電性連接。第四電極111d通過第四電極連接部111d_1電性連接,第四電極111e通過第四電極連接部111e_1電性連接。Please refer to FIG. 1A, FIG. 1B and FIG. 1C together. FIG. 1A is a schematic diagram of a sensing device according to an embodiment of the invention. 1B and FIG. 1C are top plan views of a second electrode group and a first electrode group, respectively, according to an embodiment of the invention. As shown in FIG. 1A, the sensing device 1 includes a first substrate 10, a second substrate 11, a first electrode group 101, a second electrode group 111, and a dielectric layer 12. As shown in FIG. 1B and FIG. 1C, the first electrode group 101 includes a plurality of first electrodes 101a-101c and a plurality of second electrodes 101d-101e, and the second electrode group 111 includes a plurality of third electrodes 111a-111c and a plurality of Fourth electrodes 111d to 111e. The first electrodes 101a-101c are exemplified in order, the second electrodes 101d-101e are arranged in order, the third electrodes 111a-111c are sequentially arranged, and the fourth electrodes 111d-111e are sequentially illustrated. arrangement. In this embodiment, as shown in FIG. 1B and FIG. 1C, the first electrode 101a is electrically connected through the first electrode connection portion 101a_1. The first electrode 101b is electrically connected by the first electrode connection portion 101b_1, and the first electrode 101c is electrically connected by the first electrode connection portion 101c_1. The second electrode 101d is electrically connected by the second electrode connecting portion 101d_1, and the second electrode 101e is electrically connected by the second electrode connecting portion 101e_1. The third electrode 111a is electrically connected through the third electrode connecting portion 111a_1, the third electrode 111b is electrically connected through the third electrode connecting portion 111b_1, and the third electrode 111c is electrically connected through the third electrode connecting portion 111c_1. The fourth electrode 111d is electrically connected by the fourth electrode connecting portion 111d_1, and the fourth electrode 111e is electrically connected by the fourth electrode connecting portion 111e_1.
於一實施例中,多個第一電極連接部101a_1~101c_1、多個第一電極101a~101c與多個第二電極101d~101e均位於感測裝置1的同一層,且與多個第二電極連接部101d_1~101e_位於不同層。於另一實施例中,多個第二電極連接部101d_1~101e_1、多個第一電極101a~101c與多個第二電極101d~101e均位於感測裝置1的同一層,且與多個第一電極連接部101a_1~101c_1位於不同層。第二電極組111與第一電極組101具有類似的結構,於此不再贅述。請一併參照圖1D與圖2。圖1D係依據本發明之一實施例所繪示的感測裝置的俯視示意圖。圖2係依據本發明之一實施例所繪示的感測裝置的結構剖面圖,其對應圖1D的剖面線AA’。In one embodiment, the plurality of first electrode connecting portions 101a_1 to 101c_1, the plurality of first electrodes 101a to 101c, and the plurality of second electrodes 101d to 101e are both located in the same layer of the sensing device 1, and a plurality of second The electrode connection portions 101d_1 to 101e_ are located in different layers. In another embodiment, the plurality of second electrode connecting portions 101d_1 to 101e_1, the plurality of first electrodes 101a to 101c, and the plurality of second electrodes 101d to 101e are located in the same layer of the sensing device 1, and the plurality of One of the electrode connection portions 101a_1 to 101c_1 is located at a different layer. The second electrode group 111 has a similar structure to the first electrode group 101 and will not be described again. Please refer to FIG. 1D and FIG. 2 together. FIG. 1D is a schematic top view of a sensing device according to an embodiment of the invention. 2 is a cross-sectional view showing the structure of a sensing device according to an embodiment of the present invention, which corresponds to a section line AA' of FIG. 1D.
如圖2所示,第一基板10具有第一表面E1。第二基板11與第一基板10相對設置。第一電極組101位於第一表面E1,而第二電極組111位於第二基板11且位於第一電極組101上方。於一實施例中,所述的多個第一電極101a~101c、多個第二電極101d~101e、多個第三電極111a~111c與多個第四電極111d~111e係為導電玻璃(FTO)、氧化銻錫薄膜(ATO)或銦錫氧化物(ITO)等透明導電膜所組成,用以接收來自感測電路的驅動信號。而於一實施例中,多個第三電極111a~111c於第一表面E1的正投影舉例係不重疊於第二電極101d~101e,多個第四電極111d~111e於第一表面E1的正投影舉例係不重疊於多個第一電極101a~101c。舉例來說,如圖2所示,第三電極111a於第一表面E1的正投影不重疊於第二電極101d。第四電極111d於第一表面E1的正投影不重疊於第一電極101a與第一電極101b。As shown in FIG. 2, the first substrate 10 has a first surface E1. The second substrate 11 is disposed opposite to the first substrate 10. The first electrode group 101 is located on the first surface E1, and the second electrode group 111 is located on the second substrate 11 and above the first electrode group 101. In one embodiment, the plurality of first electrodes 101a-101c, the plurality of second electrodes 101d-101e, the plurality of third electrodes 111a-111c, and the plurality of fourth electrodes 111d-111e are made of conductive glass (FTO) A transparent conductive film such as an antimony tin oxide film (ATO) or indium tin oxide (ITO) for receiving a driving signal from the sensing circuit. In an embodiment, the positive projection of the plurality of third electrodes 111a-111c on the first surface E1 is not overlapped by the second electrodes 101d-101e, and the plurality of fourth electrodes 111d-111e are positive on the first surface E1. The projection example does not overlap the plurality of first electrodes 101a to 101c. For example, as shown in FIG. 2, the orthographic projection of the third electrode 111a on the first surface E1 does not overlap the second electrode 101d. The orthographic projection of the fourth electrode 111d on the first surface E1 does not overlap the first electrode 101a and the first electrode 101b.
介電層12位於第一電極組101與第二電極組111之間,係用以隔絕第一電極組101與第二電極組111。於一個例子中,介電層12的介電係數越高越為理想。於一實施例中,介電層12係為空氣。於另一實施例中,當感測裝置1的介電層12係為多層介電層時,每個介電層的介電係數大於等於1且小於等於8。於圖2的實施例中,第二基板11具有面向第一表面E1的第二表面E2。而第二電極組111係位於第二表面E2。請一併參照圖2與圖3,圖3係依據本發明之一實施例所繪示的時序波形圖。如圖3所示,於觸控偵測時段Tt內,感測裝置1的多個第一電極101a~101c依序分別接收第一驅動信號S1,為了方便說明,圖3僅繪示第一電極101a~101b。於實務上,當多個第一電極101a~101c從感測電路(圖中未示)接收第一驅動信號S1時,多個第一電極101a~101c會被充電。The dielectric layer 12 is located between the first electrode group 101 and the second electrode group 111 for isolating the first electrode group 101 and the second electrode group 111. In one example, the higher the dielectric constant of the dielectric layer 12, the more desirable. In one embodiment, the dielectric layer 12 is air. In another embodiment, when the dielectric layer 12 of the sensing device 1 is a multi-layer dielectric layer, each dielectric layer has a dielectric constant of 1 or more and 8 or less. In the embodiment of FIG. 2, the second substrate 11 has a second surface E2 facing the first surface E1. The second electrode group 111 is located on the second surface E2. Referring to FIG. 2 and FIG. 3 together, FIG. 3 is a timing waveform diagram according to an embodiment of the present invention. As shown in FIG. 3, in the touch detection period Tt, the plurality of first electrodes 101a-101c of the sensing device 1 sequentially receive the first driving signal S1, respectively. For convenience of description, FIG. 3 only shows the first electrode. 101a~101b. In practice, when the plurality of first electrodes 101a-101c receive the first driving signal S1 from the sensing circuit (not shown), the plurality of first electrodes 101a-101c are charged.
於觸控偵測時段Tt內,多個第二電極101d~101e處於第一運作模式。於一實施例中,第一運作模式係將多個第二電極101d~101e浮接。請一併參照圖4,圖4係依據本發明之一實施例所繪示的部分感測裝置的電路圖。如圖4的例子中,第二電極101d係通過開關單元SW連接至感測電路SC。而所述的浮接係指開關單元SW未導通的狀態。同樣地,第二電極101e也是通過開關單元SW連接至感測電路SC。也就是說,在浮接狀態時,多個第二電極101d~101e雖然與感測電路結構上有連接關係,但實質上多個第二電極101d~101e與感測電路係呈現斷路的狀態。於另一實施例中,第一運作模式包含重置階段Tr與感測階段Ts,重置階段與感測階段舉例係緊密接續,如圖3所示。在重置階段Tr中,多個第二電極101d~101e會重置回到一預設電位,在接下來的感測階段Ts中,多個第二電極101d~101e與感測電路SC之間的開關單元SW導通,由感測電路SC偵測多個第二電極101d~101e的電位。During the touch detection period Tt, the plurality of second electrodes 101d to 101e are in the first operation mode. In one embodiment, the first mode of operation floats the plurality of second electrodes 101d-101e. Referring to FIG. 4 together, FIG. 4 is a circuit diagram of a portion of a sensing device according to an embodiment of the invention. In the example of FIG. 4, the second electrode 101d is connected to the sensing circuit SC through the switching unit SW. The floating connection refers to a state in which the switch unit SW is not turned on. Likewise, the second electrode 101e is also connected to the sensing circuit SC through the switching unit SW. That is to say, in the floating state, the plurality of second electrodes 101d to 101e are connected to the sensing circuit, but substantially the plurality of second electrodes 101d to 101e and the sensing circuit are in an open state. In another embodiment, the first mode of operation includes a reset phase Tr and a sensing phase Ts, and the reset phase and the sensing phase are closely linked, as shown in FIG. In the reset phase Tr, the plurality of second electrodes 101d-101e are reset back to a predetermined potential, and in the next sensing phase Ts, between the plurality of second electrodes 101d-101e and the sensing circuit SC The switching unit SW is turned on, and the potential of the plurality of second electrodes 101d to 101e is detected by the sensing circuit SC.
於觸控偵測時段Tt內,多個第三電極111a~111c依序分別接收第二驅動信號S2,為了方便說明,圖3僅繪示第二電極111a~111b。於實務上,當多個第三電極111a~111c從感測電路SC接收第二驅動信號S2時,多個第三電極111a~111c會被充電。於一實施例中,多個第一電極101a~101c及多個第三電極111a~111c係被充電到同一電位,此時圖2中上下對應的第一電極與第三電極之間不具有電位差。例如,上下對應的第一電極101a與第三電極111a之間無電位差存在。多個第四電極111d~111e處於第二運作模式。於一實施例中,第二運作模式與第一運作模式相同,包含重置階段Tr與感測階段Ts,重置階段Tr與感測階段Ts係緊密接續。同樣地,在重置階段Tr中,多個第四電極111d~111e會重置回到一預設電位,在接下的感測階段Ts中,多個第四電極111d~111e與感測電路SC之間的開關單元SW導通,感測電路SC偵測多個第四電極111d~111e的電位。During the touch detection period Tt, the plurality of third electrodes 111a-111c sequentially receive the second driving signal S2, respectively. For convenience of description, FIG. 3 only shows the second electrodes 111a-111b. In practice, when the plurality of third electrodes 111a-111c receive the second driving signal S2 from the sensing circuit SC, the plurality of third electrodes 111a-111c are charged. In one embodiment, the plurality of first electrodes 101a-101c and the plurality of third electrodes 111a-111c are charged to the same potential. At this time, there is no potential difference between the first electrode and the third electrode corresponding to the upper and lower sides in FIG. . For example, there is no potential difference between the first electrode 101a and the third electrode 111a corresponding to the upper and lower sides. The plurality of fourth electrodes 111d to 111e are in the second operation mode. In an embodiment, the second operation mode is the same as the first operation mode, and includes a reset phase Tr and a sensing phase Ts, and the reset phase Tr and the sensing phase Ts are closely connected. Similarly, in the reset phase Tr, the plurality of fourth electrodes 111d-111e are reset back to a predetermined potential, and in the following sensing phase Ts, the plurality of fourth electrodes 111d-111e and the sensing circuit The switching unit SW between the SCs is turned on, and the sensing circuit SC detects the potentials of the plurality of fourth electrodes 111d to 111e.
於所述的觸控偵測時段Tt內,感測裝置1係利用互容式感測來取得手指觸碰的座標資訊。以一個實際的例子來說,請參照圖5,圖5係依據本發明之一實施例所繪示的部分感測裝置結構的等效電路圖。如圖5所示,第一電極101a與第二電極101d之間具有電容CmA,第一電極101a與第三電極111a之間具有電容Cf2t,第二電極101d與第四電極111d 之間具有電容Cf2r,第三電極111a與第四電極111d 之間具有電容CmB。於觸控偵測時段內,第一電極101a與第三電極111a分別接收到第一驅動信號與第二驅動信號而開始充電至一電位。此時,第一電極101a與第三電極111a之間並無電位差。而第二電極101d與第四電極111d分別處於第一運作模式與第二運作模式。於此例子中,第一運作模式與第二運作模式均包含重置階段Tr與感測階段Ts,此時第二電極101d與第四電極111d之間實質上不具有電位差。也就是說,於觸控偵測時段內,電容Cf2t與電容Cf2r實質上為零。During the touch detection period Tt, the sensing device 1 uses the mutual capacitive sensing to obtain the coordinate information touched by the finger. For a practical example, please refer to FIG. 5. FIG. 5 is an equivalent circuit diagram of a structure of a portion of a sensing device according to an embodiment of the invention. As shown in FIG. 5, a capacitance CmA is provided between the first electrode 101a and the second electrode 101d, a capacitance Cf2t is provided between the first electrode 101a and the third electrode 111a, and a capacitance Cf2r is provided between the second electrode 101d and the fourth electrode 111d. There is a capacitance CmB between the third electrode 111a and the fourth electrode 111d. During the touch detection period, the first electrode 101a and the third electrode 111a respectively receive the first driving signal and the second driving signal to start charging to a potential. At this time, there is no potential difference between the first electrode 101a and the third electrode 111a. The second electrode 101d and the fourth electrode 111d are respectively in the first operation mode and the second operation mode. In this example, the first operation mode and the second operation mode both include the reset phase Tr and the sensing phase Ts, and there is substantially no potential difference between the second electrode 101d and the fourth electrode 111d. That is to say, during the touch detection period, the capacitance Cf2t and the capacitance Cf2r are substantially zero.
請一併參照圖2、圖3、圖5與圖6,圖6係依據本發明之另一實施例所繪示的部分感測裝置結構的等效電路圖。在圖5中,第一電極101a與第二電極101d之間產生電容CmA、第三電極111a與第四電極111d 之間產生電容CmB、第一電極101a與第三電極111a之間產生電容Cf2t、第二電極101d與第四電極111d 之間產生電容Cf2r、第三電極111a與手指(接地端) 之間產生電容Cf1、第四電極111d與手指(接地端) 之間產生電容Cf1r。舉例來說,相較於第一電極101a與第二電極101d之間所產生的電容CmA和第三電極111a與第四電極111d 之間所產生的電容CmB,因第一電極101a與第三電極111a之距離遠大於第一電極101a與第二電極101d之間的距離,故第一電極101a與第三電極111a之間所產生的電容Cf2t及第二電極101d與第四電極111d 之間所產生的電容Cf2r視為實質上為零時,圖5的等效電路圖可以簡化成圖6的等效電路圖。具體來說,於觸控偵測時段Tt內,第三電極111a會被充電,此時第三電極111a與第四電極111d 之間產生電容CmB。當手指(圖5、圖6的接地端)進行觸碰時,在第二運作模式的感測階段Ts中,感測電路導通開關單元,進而偵測到第三電極111a與第四電極111d 之間所產生的電容CmB產生變化,此時可以得知手指觸碰的座標資訊。於此例子中,由於電容Cf2t與電容Cf2r實質上為零,因此並不會偵測到第一電極101a與第二電極101d之間所產生的電容CmA。Referring to FIG. 2, FIG. 3, FIG. 5 and FIG. 6, FIG. 6 is an equivalent circuit diagram of a structure of a partial sensing device according to another embodiment of the present invention. In FIG. 5, a capacitance CmA is generated between the first electrode 101a and the second electrode 101d, a capacitance CmB is generated between the third electrode 111a and the fourth electrode 111d, and a capacitance Cf2t is generated between the first electrode 101a and the third electrode 111a. A capacitance Cf2r is generated between the second electrode 101d and the fourth electrode 111d, a capacitance Cf1 is generated between the third electrode 111a and the finger (ground), and a capacitance Cf1r is generated between the fourth electrode 111d and the finger (ground). For example, the capacitance CmA generated between the first electrode 101a and the second electrode 101d and the capacitance CmB generated between the third electrode 111a and the fourth electrode 111d are due to the first electrode 101a and the third electrode. The distance 111a is much larger than the distance between the first electrode 101a and the second electrode 101d, so the capacitance Cf2t generated between the first electrode 101a and the third electrode 111a and the second electrode 101d and the fourth electrode 111d are generated. When the capacitance Cf2r is regarded as substantially zero, the equivalent circuit diagram of FIG. 5 can be simplified to the equivalent circuit diagram of FIG. Specifically, during the touch detection period Tt, the third electrode 111a is charged, and a capacitance CmB is generated between the third electrode 111a and the fourth electrode 111d. When the finger (the grounding end of FIG. 5 and FIG. 6) is touched, in the sensing phase Ts of the second operation mode, the sensing circuit turns on the switching unit, thereby detecting the third electrode 111a and the fourth electrode 111d. The capacitance CmB generated between the two changes, and the coordinate information touched by the finger can be known. In this example, since the capacitance Cf2t and the capacitance Cf2r are substantially zero, the capacitance CmA generated between the first electrode 101a and the second electrode 101d is not detected.
請回到圖3。如圖3所示,於感壓偵測時段Tf內,多個第一電極101a~101c接收第三驅動信號S3,第二電極101d~101e處於第二運作模式,多個第三電極111a~111c與多個第四電極111d~111e均處於第三運作模式,其中為了方便說明,圖3僅繪示出第一電極101a~101b與第二電極111a~111b。於此實施例中,當多個第一電極101a~101c接收第三驅動信號S3時,均被充電到一個電位。第二運作模式中包含重置階段Tr與感測階段Ts,其在重置階段Tr與感測階段Ts的運作方式與前述相同,於此不另贅述。而第三運作模式中,多個第三電極111a~111c與多個第四電極111d~111e接收一個固定的參考電壓(例如直流電壓)。於另一實施例中,所述的參考電壓舉例係為感測裝置1的一個接地電壓。使多個第三電極111a~111c與多個第四電極111d~111e接收固定的參考電壓或接地電壓的目的係在於屏蔽手指觸碰時所產生的信號,而使得感測裝置1可以更準確地感測到手指下壓的力道。於另一實施例中,多個第三電極111a~111c與多個第四電極111d~111e係為浮接。Please return to Figure 3. As shown in FIG. 3, in the sensing detection period Tf, the plurality of first electrodes 101a-101c receive the third driving signal S3, the second electrodes 101d-101e are in the second operation mode, and the plurality of third electrodes 111a-111c The plurality of fourth electrodes 111d-111e are in the third mode of operation. For convenience of description, FIG. 3 only shows the first electrodes 101a-101b and the second electrodes 111a-111b. In this embodiment, when the plurality of first electrodes 101a to 101c receive the third driving signal S3, they are all charged to one potential. The second operation mode includes a reset phase Tr and a sensing phase Ts, and the operation mode of the reset phase Tr and the sensing phase Ts is the same as the foregoing, and will not be further described herein. In the third mode of operation, the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e receive a fixed reference voltage (eg, a DC voltage). In another embodiment, the reference voltage is exemplified by a ground voltage of the sensing device 1. The purpose of causing the plurality of third electrodes 111a 111 111c and the plurality of fourth electrodes 111d 111 111 to receive a fixed reference voltage or a ground voltage is to shield the signal generated when the finger is touched, so that the sensing device 1 can be more accurately Sensing the force of the finger down. In another embodiment, the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e are floating.
於所述的感壓偵測時段Tf內,感測裝置1可以通過因介電層12的厚度變化所產生的電容變化值,進而推算出感測裝置1所受的手指下壓力道。以一個實際的例子來說,請一併參照圖2、圖3、圖5與圖7,圖7係依據本發明之另一實施例所繪示的部分感測裝置結構的等效電路圖。於感壓偵測時段,由於第三電極111a與第四電極111d舉例係接收一個接地電壓,而手指視為一個接地電壓,因此圖5的可以簡化成圖7的等效電路圖。如圖7所示,當手指觸碰第二基板11相對於第二表面E2之外表面而施加下壓力道時,介電層12所包含的介電材料會被壓縮,導致介電層12的厚度方向產生形變而使得手指與第一電極101a之間的距離,以及手指與第二電極101d之間的距離均減少。此時電容Cf2t與電容Cf2r分別改變為電容Cf2t’與電容Cf2r’。因此,電容CmA也隨之改變為CmA’。此時,藉由CmA’與CmA之間的變異量,便可以進一步推算出手指下壓力道的大小。於一實施例中,前述的觸控偵測時段Tt與感壓偵測時段Tf緊密接續。也就是說,當一個觸控偵測時段Tt結束後,一個感壓偵測時段Tf會接續在後,而當前述的感壓偵測時段Tf結束後,另一觸控偵測時段Tt會接續在後,且反覆地重複上述的運作時序。During the sensing period Tf, the sensing device 1 can calculate the pressure channel under the finger of the sensing device 1 by the value of the capacitance change caused by the thickness variation of the dielectric layer 12. For a practical example, please refer to FIG. 2, FIG. 3, FIG. 5 and FIG. 7. FIG. 7 is an equivalent circuit diagram of a structure of a partial sensing device according to another embodiment of the present invention. In the pressure sensing detection period, since the third electrode 111a and the fourth electrode 111d receive a ground voltage as an example, and the finger is regarded as a ground voltage, the equivalent circuit diagram of FIG. 7 can be simplified. As shown in FIG. 7, when a finger touches the outer surface of the second substrate 11 with respect to the outer surface of the second surface E2, the dielectric material contained in the dielectric layer 12 is compressed, resulting in the dielectric layer 12. The thickness direction is deformed such that the distance between the finger and the first electrode 101a and the distance between the finger and the second electrode 101d are reduced. At this time, the capacitance Cf2t and the capacitance Cf2r are changed to the capacitance Cf2t' and the capacitance Cf2r', respectively. Therefore, the capacitance CmA is also changed to CmA'. At this time, by the amount of variation between CmA' and CmA, the magnitude of the pressure channel under the finger can be further estimated. In one embodiment, the touch detection period Tt and the pressure detection period Tf are closely connected. In other words, when one touch detection period Tt ends, one pressure detection period Tf will continue, and when the aforementioned pressure detection period Tf ends, another touch detection period Tt will continue. Thereafter, the above operational timing is repeated repeatedly.
請參照圖8,圖8係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。於此實施例中,感測裝置1的第二基板11除了具有面向第一基板10的第二表面E2之外,更具有相對於第二表面E2的第三表面E3,而第二電極組111位於第三表面E3。於此實施例中,第一基板10與第二基板11之間的介電層12舉例係為液晶材料,於感壓偵測時段Tf中,係通過液晶材料的壓縮程度,以偵測手指下壓的力道。請參照圖9,圖9係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。於此實施例中,感測裝置1更包含第三基板14以及液晶層13。液晶層13夾設於第三基板14與第一基板10之間。於另一實施例中,請參照圖10,圖10係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。圖10與圖9的實施例不同的是,圖10的第二電極組111係位於第二基板11的第三表面E3,第二基板11係位於第二電極組111和第一電極組101之間。Please refer to FIG. 8. FIG. 8 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. In this embodiment, the second substrate 11 of the sensing device 1 has a third surface E3 opposite to the second surface E2, and the second electrode group 111, in addition to the second surface E2 facing the first substrate 10. Located on the third surface E3. In this embodiment, the dielectric layer 12 between the first substrate 10 and the second substrate 11 is exemplified by a liquid crystal material. In the pressure sensing detection period Tf, the degree of compression of the liquid crystal material is used to detect the under the finger. The strength of the pressure. Please refer to FIG. 9. FIG. 9 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. In this embodiment, the sensing device 1 further includes a third substrate 14 and a liquid crystal layer 13 . The liquid crystal layer 13 is interposed between the third substrate 14 and the first substrate 10. In another embodiment, please refer to FIG. 10. FIG. 10 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. 10 is different from the embodiment of FIG. 9 in that the second electrode group 111 of FIG. 10 is located on the third surface E3 of the second substrate 11, and the second substrate 11 is located in the second electrode group 111 and the first electrode group 101. between.
請一併參照圖3與圖11,圖11係依據本發明之一實施例所繪示的偵測方法的方法流程圖。此偵測方法適於圖1的感測裝置1。如圖11所示,在步驟S301中,於觸控偵測時段Tt中,由感測電路提供第一驅動信號至多個第一電極101a~101c,並使多個第二電極101d~101e處於第一運作模式。在步驟S303中,於觸控偵測時段Tt中,由感測電路提供第二驅動信號至多個第三電極111a~111c,並使多個第四電極111d~111e處於第二運作模式。在步驟S305中,於感壓偵測時段Tf中,由感測電路提供第三驅動信號至多個第一電極101a~101c,並使多個第二電極101d~101e處於第二運作模式。於步驟S307中,在感壓偵測時段Tf中,感測電路使多個第三電極111a~111c與多個第四電極111d~111e處於第三運作模式。在圖11中,雖然以箭頭表示步驟S301~S307的先後順序,但不以此為限,步驟S303可先於或同時於步驟S301,步驟S307可先於或同時於步驟S305,而感壓偵測時段Tf可先於觸控偵測時段Tt,但不以此為限。本領域人士可依照本實施例之精神依據需求調整改變各個步驟S301~S307的順序。Please refer to FIG. 3 and FIG. 11 together. FIG. 11 is a flowchart of a method for detecting a method according to an embodiment of the present invention. This detection method is suitable for the sensing device 1 of FIG. As shown in FIG. 11, in step S301, in the touch detection period Tt, the first driving signal is provided by the sensing circuit to the plurality of first electrodes 101a-101c, and the plurality of second electrodes 101d-101e are in the first A mode of operation. In step S303, in the touch detection period Tt, the second drive signal is supplied from the sensing circuit to the plurality of third electrodes 111a-111c, and the plurality of fourth electrodes 111d-111e are in the second operation mode. In step S305, in the sensing detection period Tf, the third drive signal is supplied from the sensing circuit to the plurality of first electrodes 101a-101c, and the plurality of second electrodes 101d-101e are in the second operation mode. In step S307, in the sensing detection period Tf, the sensing circuit causes the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e to be in the third operation mode. In FIG. 11, although the order of steps S301 to S307 is indicated by an arrow, but not limited thereto, step S303 may precede or simultaneously with step S301, and step S307 may precede or simultaneously with step S305, and sense pressure detection. The measurement period Tf may precede the touch detection period Tt, but is not limited thereto. Those skilled in the art can adjust the order of the respective steps S301 to S307 according to the requirements according to the spirit of the embodiment.
於一實施例中,第一運作模式係包含將多個第二電極101d~101e浮接。於另一實施例中,第一運作模式中包含重置階段Tr與感測階段Ts,重置階段Tr以及感測階段Ts舉例係緊密接續。關於浮接、重置階Tr段以及感測階段Ts的具體操作方式前述段落已有敘述,故於此不再贅述。於一實施例中,第二運作模式與第一運作模式舉例均包含重置階段Tr與感測階段Ts。於一實施例中,第三運作模式包含將多個第三電極111a~111c與多個第四電極111d~111e浮接。於另一實施例中,於第三運作模式中,多個第三電極111a~111c與第四電極111d~111e均接收參考電壓或接地電壓。於一個例子中,參考電壓為0伏特至30伏特,較佳為3.3伏特、5伏特或12伏特。In one embodiment, the first mode of operation includes floating a plurality of second electrodes 101d-101e. In another embodiment, the first operational mode includes a reset phase Tr and a sensing phase Ts, and the reset phase Tr and the sensing phase Ts are closely connected. The specific operation modes of the floating connection, the reset stage Tr segment, and the sensing phase Ts have been described in the foregoing paragraphs, and thus will not be described again. In an embodiment, the second mode of operation and the first mode of operation both include a reset phase Tr and a sensing phase Ts. In one embodiment, the third mode of operation includes floating the plurality of third electrodes 111a-111c and the plurality of fourth electrodes 111d-111e. In another embodiment, in the third mode of operation, the plurality of third electrodes 111a-111c and the fourth electrodes 111d-111e each receive a reference voltage or a ground voltage. In one example, the reference voltage is from 0 volts to 30 volts, preferably 3.3 volts, 5 volts, or 12 volts.
綜合以上所述,本發明的感測裝置與偵測方法,係藉由感壓偵測時段與觸控偵測時段中的不同操作方式,進而可以互容式的方式偵測手指觸碰時的電容變化量而取得觸碰的座標資訊,且通過介電層的擠壓所產生的電容變異量,進而推算手指按壓的力道大小。In summary, the sensing device and the detecting method of the present invention can detect the finger touch when the touch is detected by the different sensing modes in the sensing period and the touch detecting period. The amount of capacitance change is used to obtain the coordinate information of the touch, and the amount of capacitance variation caused by the pressing of the dielectric layer is used to estimate the magnitude of the force of the finger press.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
1‧‧‧感測裝置1‧‧‧Sensing device
10‧‧‧第一基板10‧‧‧First substrate
11‧‧‧第二基板11‧‧‧second substrate
12‧‧‧介電層12‧‧‧Dielectric layer
13‧‧‧液晶層13‧‧‧Liquid layer
14‧‧‧ 第三基板14‧‧‧ Third substrate
101‧‧‧第一電極組101‧‧‧First electrode group
111‧‧‧第二電極組111‧‧‧Second electrode group
101a~101c‧‧‧第一電極101a~101c‧‧‧first electrode
101d~101e‧‧‧第二電極101d~101e‧‧‧second electrode
111a~111c‧‧‧第三電極111a~111c‧‧‧ third electrode
111d~111e‧‧‧第四電極111d~111e‧‧‧fourth electrode
101a_1~101c_1‧‧‧第一電極連接部101a_1~101c_1‧‧‧First electrode connection
101d_1~101e_1‧‧‧第二電極連接部101d_1~101e_1‧‧‧Second electrode connection
111a_1~111c_1‧‧‧第三電極連接部111a_1~111c_1‧‧‧third electrode connection
111d_1~111e_1‧‧‧第四電極連接部111d_1~111e_1‧‧‧fourth electrode connection
AA’‧‧‧剖面線AA’‧‧‧ hatching
E1‧‧‧第一表面E1‧‧‧ first surface
E2‧‧‧第二表面E2‧‧‧ second surface
E3‧‧‧第三表面E3‧‧‧ third surface
S1‧‧‧第一驅動信號S1‧‧‧First drive signal
S2‧‧‧第二驅動信號S2‧‧‧second drive signal
S3‧‧‧第三驅動信號S3‧‧‧ third drive signal
SC‧‧‧感測電路SC‧‧‧Sensor circuit
SW‧‧‧開關單元SW‧‧‧Switch unit
Tr‧‧‧重置階段Tr‧‧‧Reset phase
Ts‧‧‧感測階段Ts‧‧‧Sensing phase
Cf1、Cf1r、Cf2t、Cf2t’、Cf2r、Cf2r’、CmA、CmA’、CmB‧‧‧電容Cf1, Cf1r, Cf2t, Cf2t', Cf2r, Cf2r', CmA, CmA', CmB‧‧‧ capacitor
圖1A係依據本發明之一實施例所繪示的感測裝置的示意圖。 圖1B係依據本發明之一實施例所繪示的第二電極組的俯視示意圖。 圖1C係依據本發明之一實施例所繪示的第一電極組的俯視示意圖。 圖1D係依據本發明之一實施例所繪示的感測裝置的俯視示意圖。 圖2係依據本發明之一實施例所繪示的感測裝置的結構剖面圖。 圖3係依據本發明之一實施例所繪示的時序波形圖。 圖4係依據本發明之一實施例所繪示的部分感測裝置的電路圖。 圖5係依據本發明之一實施例所繪示的部分感測裝置結構的等效電路圖。 圖6係依據本發明之另一實施例所繪示的部分感測裝置結構的等效電路圖。 圖7係依據本發明之另一實施例所繪示的部分感測裝置結構的等效電路圖。 圖8係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。 圖9係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。 圖10係依據本發明之另一實施例所繪示的感測裝置的結構剖面圖。 圖11係依據本發明之一實施例所繪示的偵測方法的方法流程圖。FIG. 1A is a schematic diagram of a sensing device according to an embodiment of the invention. FIG. 1B is a top plan view of a second electrode group according to an embodiment of the invention. FIG. 1C is a top plan view of a first electrode group according to an embodiment of the invention. FIG. 1D is a schematic top view of a sensing device according to an embodiment of the invention. 2 is a cross-sectional view showing the structure of a sensing device according to an embodiment of the present invention. FIG. 3 is a timing waveform diagram according to an embodiment of the invention. 4 is a circuit diagram of a portion of a sensing device in accordance with an embodiment of the present invention. FIG. 5 is an equivalent circuit diagram of a structure of a portion of a sensing device according to an embodiment of the invention. FIG. 6 is an equivalent circuit diagram of a structure of a portion of a sensing device according to another embodiment of the present invention. FIG. 7 is an equivalent circuit diagram of a structure of a portion of a sensing device according to another embodiment of the present invention. FIG. 8 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. 9 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. FIG. 10 is a cross-sectional view showing the structure of a sensing device according to another embodiment of the present invention. FIG. 11 is a flowchart of a method for detecting a method according to an embodiment of the invention.
1‧‧‧感測裝置 1‧‧‧Sensing device
10‧‧‧第一基板 10‧‧‧First substrate
11‧‧‧第二基板 11‧‧‧second substrate
101‧‧‧第一電極組 101‧‧‧First electrode group
111‧‧‧第二電極組 111‧‧‧Second electrode group
12‧‧‧介電層 12‧‧‧Dielectric layer
AA’‧‧‧剖面線 AA’‧‧‧ hatching
E1‧‧‧第一表面 E1‧‧‧ first surface
E2‧‧‧第二表面 E2‧‧‧ second surface
101a~101c‧‧‧第一電極 101a~101c‧‧‧first electrode
101d~101e‧‧‧第二電極 101d~101e‧‧‧second electrode
111a~111c‧‧‧第三電極 111a~111c‧‧‧ third electrode
111d~111e‧‧‧第四電極 111d~111e‧‧‧fourth electrode
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TW201314541A (en) * | 2011-08-11 | 2013-04-01 | Murata Manufacturing Co | Touch panel |
US20140062933A1 (en) * | 2012-08-29 | 2014-03-06 | Sharp Kabushiki Kaisha | Capacitive touch panel with a 'dual layer' force sensor |
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CN102109690A (en) * | 2009-12-25 | 2011-06-29 | 上海天马微电子有限公司 | Liquid crystal display device with embedded touch screen and control method |
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