TWI606501B - Processing device - Google Patents
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- TWI606501B TWI606501B TW103111223A TW103111223A TWI606501B TW I606501 B TWI606501 B TW I606501B TW 103111223 A TW103111223 A TW 103111223A TW 103111223 A TW103111223 A TW 103111223A TW I606501 B TWI606501 B TW I606501B
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Description
本發明是有關於加工半導體晶圓等被加工物的切削裝置與雷射加工裝置等的加工裝置。 The present invention relates to a processing apparatus for processing a cutting apparatus such as a semiconductor wafer, a laser processing apparatus, and the like.
在半導體裝置製造步驟中，略圓板形的半導體晶圓的表面會受到排列成格子狀之被稱作切割道(street)的分割預定線劃分成複數個區域，並在該劃分的區域中形成IC、LSI等裝置。並且，可利用切削裝置等晶圓切削裝置沿著切割道切割半導體晶圓而製造出一個個的半導體裝置。 In the semiconductor device manufacturing step, the surface of the substantially circular-shaped semiconductor wafer is divided into a plurality of regions by a divisional line called a street arranged in a lattice shape, and is formed in the divided region. IC, LSI and other devices. Further, a semiconductor device can be manufactured by cutting a semiconductor wafer along a dicing street by a wafer cutting device such as a cutting device.
形成於晶圓上的切割道的間隔及晶圓的大小都會依裝置的種類而異。在這種以切削裝置沿著切割道切割各種晶圓的情況中，切入深度、切削水的流量、洗淨條件等加工條件都將因晶圓的種類而異，並會依晶圓的種類而被設定，因此當加工開始時會由操作員將對應晶圓種類的加工條件輸入至切削裝置的控制機構中(參照例如，專利文獻1)。 The spacing of the scribe lines formed on the wafer and the size of the wafer will vary depending on the type of device. In the case where the cutting device cuts various wafers along the dicing street, the processing conditions such as the depth of cut, the flow rate of the cutting water, and the cleaning conditions will vary depending on the type of the wafer, and depending on the type of the wafer. When the machining is started, the operator inputs the machining conditions of the corresponding wafer type to the control mechanism of the cutting device (see, for example, Patent Document 1).
專利文獻1：日本專利特開2009-117776號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-117776
晶圓加工時，操作員會依照晶圓的商品編號、名稱來特定晶圓的種類，並設定加工條件。然而缺乏技術的的操作員無法以晶圓的商品編號與名稱來特定晶圓的種類，有設定錯誤的加工條件而導致裝置損傷的問題。 During wafer processing, the operator will specify the type of wafer according to the product number and name of the wafer and set the processing conditions. However, an operator who lacks technology cannot specify the type of wafer by the product number and name of the wafer, and there is a problem that the device is damaged due to setting of the wrong processing conditions.
像這樣的問題並不只侷限於切削裝置，也是雷射加工裝置等其他加工裝置的共通問題。 Problems like this are not limited to the cutting device, but are also a common problem with other processing devices such as laser processing devices.
本發明為鑒於上述事實而作成者，其主要技術課題為提供能以對應被加工物種類的加工條件確實地進行加工之加工裝置。 The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a processing apparatus capable of reliably performing processing in accordance with processing conditions corresponding to the type of workpiece.
為解決上述之主要技術課題，依據本發明所提供之加工裝置，具有保持被加工物之保持機構、加工以該被加工物保持機構所保持之被加工物的加工機構，以及拍攝以該被加工物保持機構所保持之被加工物的攝影機構。 In order to solve the above-mentioned main technical problems, a processing apparatus according to the present invention includes a holding mechanism for holding a workpiece, a processing mechanism for processing a workpiece held by the workpiece holding mechanism, and photographing to be processed. A photographing mechanism for the workpiece to be held by the object holding mechanism.
其特徵為，該加工裝置還具備依據來自該攝影機構的影像信號來設定加工條件的控制機構。 The processing apparatus further includes a control unit that sets processing conditions in accordance with a video signal from the imaging unit.
該控制機構設有存儲對應被加工物種類的複數種加工條件與對應被加工物種類的複數種特徵型樣的記憶體，並將該攝影機構所拍攝的被加工物的特徵型樣的影像信號與記憶體中所存儲的複數種特徵型樣進行比對，以特定與影 像信號具有同一性的特徵型樣，並將與該特定的特徵型樣對應的被加工物的加工條件決定為應當加工的被加工物的加工條件。 The control means is provided with a memory for storing a plurality of types of processing conditions corresponding to the type of the workpiece and a plurality of types of features corresponding to the type of the workpiece, and the image signal of the characteristic pattern of the workpiece captured by the photographing mechanism Compare with a plurality of feature patterns stored in the memory to specify The characteristic pattern of the image having the identity is determined, and the processing condition of the workpiece corresponding to the specific feature pattern is determined as the processing condition of the workpiece to be processed.
依據本發明的加工裝置，由於控制機構設有存儲對應被加工物種類之複數種加工條件與對應被加工物種類之複數種特徵型樣的記憶體，並可將藉由攝影機構所拍攝的被加工物的特徵型樣的影像信號與記憶體中所存儲的複數種特徵型樣進行比對，以特定與影像信號具有同一性的特徵型樣，並將與該特定的特徵型樣對應的被加工物之加工條件決定為應當加工的被加工物的加工條件，因此，就算是缺乏技術的操作員，也不需要依晶圓的商品編號與名稱來特定晶圓的種類，藉此可解決因設定錯誤的加工條件而使裝置產生損傷的問題。 According to the processing apparatus of the present invention, the control means is provided with a memory for storing a plurality of processing conditions corresponding to the type of the workpiece and a plurality of characteristic patterns corresponding to the type of the workpiece, and the photographed by the photographing mechanism The image signal of the characteristic pattern of the processed object is compared with a plurality of characteristic patterns stored in the memory, and the feature pattern having the identity with the image signal is specified, and the image corresponding to the specific feature pattern is The processing conditions of the workpiece are determined as the processing conditions of the workpiece to be processed. Therefore, even if the operator lacks the technology, it is not necessary to specify the type of the wafer according to the product number and name of the wafer, thereby solving the problem. Setting the wrong processing conditions causes damage to the device.
11‧‧‧暫置機構 11‧‧‧ Provisional institutions
12‧‧‧被加工物搬出機構 12‧‧‧Worked objects moving out of the organization
13‧‧‧第1搬送機構 13‧‧‧1st transport agency
14‧‧‧洗淨機構 14‧‧‧Cleaning agency
15‧‧‧第2搬送機構 15‧‧‧2nd transport agency
2‧‧‧裝置外殼 2‧‧‧ device housing
3‧‧‧夾頭台 3‧‧‧ chuck table
31‧‧‧夾頭台本體 31‧‧‧ chuck body
32‧‧‧吸著夾頭 32‧‧‧Sucking chuck
33‧‧‧夾具 33‧‧‧ fixture
4‧‧‧主軸單元 4‧‧‧ spindle unit
41‧‧‧主軸外殼 41‧‧‧Spindle housing
42‧‧‧旋轉主軸 42‧‧‧Rotating spindle
43‧‧‧切削刀 43‧‧‧Cutter
44‧‧‧切削水供給機構 44‧‧‧Cutting water supply mechanism
5‧‧‧攝影機構 5‧‧‧Photography
6‧‧‧顯示機構 6‧‧‧Display agency
7‧‧‧卡匣載置台 7‧‧‧Card loading platform
7a‧‧‧卡匣載置區域 7a‧‧‧Carcass loading area
8‧‧‧卡匣 8‧‧‧Carmen
9‧‧‧半導體晶圓 9‧‧‧Semiconductor wafer
9a‧‧‧表面 9a‧‧‧ surface
9b‧‧‧背面 9b‧‧‧back
91‧‧‧切割道 91‧‧‧ cutting road
92‧‧‧裝置 92‧‧‧ device
10‧‧‧控制機構 10‧‧‧Control agency
101‧‧‧中央處理裝置(CPU) 101‧‧‧Central Processing Unit (CPU)
102‧‧‧唯讀記憶體(ROM) 102‧‧‧Reading Memory (ROM)
103‧‧‧隨機存取記憶體(RAM) 103‧‧‧ Random Access Memory (RAM)
104‧‧‧輸入介面 104‧‧‧Input interface
105‧‧‧輸出介面 105‧‧‧Output interface
F‧‧‧環狀支持框架 F‧‧‧Ring Support Framework
T‧‧‧切割膠帶 T‧‧‧ cutting tape
X、Y、Z‧‧‧箭形符號 X, Y, Z‧‧‧ arrow symbol
圖1為作為依本發明所構成之加工裝置的切削裝置的立體圖；圖2為配備在圖1所示之切削裝置之控制機構的方塊構成圖；圖3為作為被加工物的半導體晶圓的立體圖；圖4顯示將圖3所示之半導體晶圓黏貼於裝設在環狀框架上的切割膠帶表面之狀態的立體圖；圖5為設定晶圓種類、各種晶圓的特徵型樣，及加工條件的加工條件設定表；及 圖6顯示以裝設在圖1所示之切削裝置上的攝影機構所拍攝之特徵型樣的說明圖。 1 is a perspective view of a cutting apparatus as a processing apparatus constructed in accordance with the present invention; FIG. 2 is a block diagram of a control mechanism provided in the cutting apparatus shown in FIG. 1, and FIG. 3 is a semiconductor wafer as a workpiece. FIG. 4 is a perspective view showing a state in which the semiconductor wafer shown in FIG. 3 is adhered to the surface of the dicing tape mounted on the annular frame; FIG. 5 is a view showing the type of the wafer, the characteristic patterns of the various wafers, and the processing. Conditional processing condition setting table; and Fig. 6 is an explanatory view showing a feature pattern photographed by a photographing mechanism mounted on the cutting device shown in Fig. 1.
以下，將參照附圖來詳細說明依照本發明所構成之加工裝置的較佳的實施形態。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of a processing apparatus constructed in accordance with the present invention will be described in detail with reference to the accompanying drawings.
圖1中顯示作為依照本發明所構成之加工裝置的切削裝置的立體圖。 Fig. 1 shows a perspective view of a cutting device as a processing device constructed in accordance with the present invention.
於圖示之實施形態中的切削裝置具備大致呈直方體狀的裝置外殼2。在此裝置外殼2內將作為保持被加工物的被加工物保持機構的夾頭台3配置成可在為切削傳送方向之以箭形符號X所示的方向上移動。夾頭台3具備夾頭台本體31與裝設在該夾頭台本體31上之吸著夾頭32，並且形成為可藉由圖未示之吸引機構將作為被加工物之例如圓板狀的晶圓吸引保持在為該吸著夾頭32表面之保持面上。又，夾頭台3藉由圖未示出之旋轉機構而構成為可旋轉。再者，夾頭台3中配設有夾具33，用來固定透過切割膠帶支撐作為被加工物的後述晶圓的環狀支撐框架。如此構成之夾頭台3，是利用圖未示之作為加工傳送機構的切削傳送機構，形成為可沿箭形符號X所示之加工傳送方向移動。 The cutting device according to the embodiment shown in the drawings includes a device casing 2 having a substantially rectangular parallelepiped shape. In the apparatus casing 2, the chuck table 3 as a workpiece holding mechanism for holding a workpiece is disposed so as to be movable in a direction indicated by an arrow X in the cutting conveyance direction. The chuck table 3 includes a chuck table main body 31 and a suction chuck 32 attached to the chuck base body 31, and is formed to be, for example, a disk shape as a workpiece by a suction mechanism not shown. The wafer attraction is maintained on the holding surface of the surface of the suction chuck 32. Further, the chuck table 3 is configured to be rotatable by a rotating mechanism (not shown). Further, a clamp 33 is disposed in the chuck table 3 for fixing an annular support frame that supports a wafer to be described later as a workpiece through a dicing tape. The chuck table 3 configured as described above is formed so as to be movable in the processing conveyance direction indicated by the arrow symbol X by a cutting conveyance mechanism which is not shown as a processing conveyance mechanism.
圖示之實施形態中的切削裝置具有作為加工機構的主軸單元4。主軸單元4具備裝設於圖未示之移動基台並可在為分度方向之箭形符號Y所示之方向上以及為切入方向之箭形符號Z所示之方向上移動調整之主軸外殼41、被 該主軸外殼41支撐為可自由旋轉並受到圖未示之旋轉驅動機構旋轉驅動之旋轉主軸42，以及裝設於該旋轉主軸42之切削刀43。又，主軸單元4也附設有切削水供給機構44，用於供應相當於純水的切削水。 The cutting device in the illustrated embodiment has a spindle unit 4 as a machining mechanism. The spindle unit 4 is provided with a spindle housing that is mounted on a moving base, not shown, and that is adjustable in the direction indicated by the arrow symbol Y in the indexing direction and in the direction indicated by the arrow symbol Z in the cutting direction. 41, was The spindle housing 41 is supported by a rotary spindle 42 that is freely rotatable and rotationally driven by a rotary drive mechanism (not shown), and a cutter 43 that is mounted to the rotary spindle 42. Further, the spindle unit 4 is also provided with a cutting water supply mechanism 44 for supplying cutting water equivalent to pure water.
圖示之實施形態中的切削裝置具有攝影機構5，用於拍攝保持在構成上述夾頭台3之吸著夾頭32表面之保持面上之晶圓的表面，並檢測出上述切削割刀43的應當切削區域。該攝影機構5是由顯微鏡與CCD相機等光學機構所構成，並可將拍攝之影像信號傳送至後述之控制機構。又，切削裝置也具有顯示攝影機構5所拍攝之影像或後述之加工條件等之顯示機構6。 The cutting device in the illustrated embodiment has a photographing mechanism 5 for photographing the surface of the wafer held on the holding surface of the surface of the chuck 32 constituting the chuck table 3, and detecting the cutting blade 43. The area that should be cut. The photographing mechanism 5 is constituted by an optical mechanism such as a microscope and a CCD camera, and can transmit the photographed image signal to a control mechanism to be described later. Further, the cutting device also has a display mechanism 6 that displays an image captured by the imaging unit 5, processing conditions described later, and the like.
於上述裝置外殼2中的卡匣載置區域7a中配設有載置用於收納被加工物的卡匣之卡匣載置台7。此卡匣載置台7藉由圖未示之升降機構而構成為可沿上下方向移動。卡匣載置台7上載置有可收納作為被加工物之後述半導體晶圓的卡匣8。 A cassette mounting table 7 on which a cassette for storing a workpiece is placed is disposed in the cassette mounting area 7a of the apparatus casing 2. The cassette mounting table 7 is configured to be movable in the vertical direction by an elevating mechanism (not shown). The cassette mounting table 7 is provided with a cassette 8 for accommodating a semiconductor wafer to be described later as a workpiece.
圖示之實施形態中的切削裝置具備，將被收納在卡匣8之作為被加工物的後述半導體晶圓搬出到暫置機構11的被加工物搬出機構12、透過該被加工物搬出機構12將被搬出到暫置機構11的半導體晶圓搬運至上述夾頭台3上的第1搬送機構13、將位於夾頭台3上並經切削加工過之半導體晶圓洗淨的洗淨機構14，及將位於夾頭台3上並經切割加工過之半導體晶圓搬運至洗淨機構14的第2搬送機構15。 In the cutting device according to the embodiment of the present invention, the workpiece carrying-out mechanism 12 that carries the semiconductor wafer to be processed, which is stored in the cassette 8 as a workpiece, to the temporary mechanism 11 is passed through the workpiece carrying-out mechanism 12 The first transfer mechanism 13 that transports the semiconductor wafer that has been carried out to the temporary mechanism 11 to the above-described chuck table 3, and the cleaning mechanism 14 that cleans the semiconductor wafer that has been cut and processed on the chuck table 3 And the second transfer mechanism 15 that transports the semiconductor wafer that has been cut and processed on the chuck table 3 to the cleaning mechanism 14.
圖示之實施形態中的切削裝置具備如圖2所示之 控制機構10，用於控制以包含作為上述加工機構之主軸單元4的各種機構所進行之加工作業。控制機構10由電腦所構成，並設有依控制程式進行演算處理的中央處理裝置(CPU)101、儲存控制程式等的唯讀記憶體(ROM)102、儲存對應後述之被加工物種類的複數種加工條件與對應被加工物種類的複數種特徵型樣或演算結果等的隨機存取記憶體(RAM)103、輸入介面104以及輸出介面105。由上述攝影機構5等傳出之信號會輸入到控制機構10的輸入介面104。而且，控制機構10的輸出介面105除了可將顯示信號輸出至上述顯示機構6外，還同時將控制信號輸出至包含作為上述加工機構之主軸單元4的各種機構。 The cutting device in the embodiment shown in the figure has the structure shown in FIG. 2 The control mechanism 10 is for controlling a machining operation performed by various mechanisms including the spindle unit 4 as the above-described machining mechanism. The control unit 10 is composed of a computer, and includes a central processing unit (CPU) 101 that performs calculation processing according to a control program, a read-only memory (ROM) 102 that stores a control program, and the like, and a plurality of types of processed objects that are described later. The processing conditions and the random access memory (RAM) 103, the input interface 104, and the output interface 105 of a plurality of feature patterns or calculation results corresponding to the type of the workpiece. The signal transmitted by the above-described photographing mechanism 5 or the like is input to the input interface 104 of the control unit 10. Further, in addition to outputting the display signal to the display unit 6, the output interface 105 of the control unit 10 simultaneously outputs a control signal to various mechanisms including the spindle unit 4 as the processing unit.
圖示之實施形態中的切削裝置是如以上所構成，以下將就其運作做說明。 The cutting device in the embodiment shown in the drawings is configured as described above, and the operation thereof will be described below.
圖3所示為藉由上述切削裝置所切削加工之作為被加工物的半導體晶圓9的立體圖。圖3所示之半導體晶圓9是由矽晶圓所製成，並於表面9a將複數條切割道91形成為格子狀，同時將IC、LSI等裝置92形成在以該複數條切割道91所劃分之複數個區域中。 Fig. 3 is a perspective view showing the semiconductor wafer 9 as a workpiece processed by the above cutting apparatus. The semiconductor wafer 9 shown in FIG. 3 is made of a germanium wafer, and a plurality of dicing streets 91 are formed in a lattice shape on the surface 9a, and devices 92 such as ICs and LSIs are formed on the plurality of dicing streets 91. In a plurality of areas divided.
為了沿著切割道91分割上述半導體晶圓9，首先，是將以合成樹脂製成之切割膠帶的表面黏貼到半導體晶圓9的背面9b，同時實施藉由環狀框架支撐切割膠帶外周部的晶圓支撐步驟。也就是說，如圖4所示，將半導體晶圓9的背面9b黏貼至以覆蓋住環狀框架F的內側開口部的方式裝設外周部之切割膠帶T的表面。再者，在圖示的實施形態 中的切割膠帶F是由聚氯乙烯(PVC)片所製成。而經如此地實施晶圓支撐步驟的半導體晶圓9，是以將背面9b黏貼於裝設在環狀框架F的切割膠帶T表面的狀態被收納在上述卡匣8中。 In order to divide the semiconductor wafer 9 along the dicing street 91, first, the surface of the dicing tape made of synthetic resin is adhered to the back surface 9b of the semiconductor wafer 9, and the outer peripheral portion of the dicing tape is supported by the annular frame. Wafer support step. That is, as shown in FIG. 4, the back surface 9b of the semiconductor wafer 9 is adhered to the surface of the dicing tape T of the outer peripheral portion so as to cover the inner opening portion of the annular frame F. Furthermore, in the illustrated embodiment The cutting tape F in the middle is made of polyvinyl chloride (PVC) sheets. The semiconductor wafer 9 subjected to the wafer supporting step in this manner is housed in the cassette 8 in a state in which the back surface 9b is adhered to the surface of the dicing tape T attached to the annular frame F.
上述半導體晶圓9的大小(晶圓尺寸)與切割道91的間隔會依晶圓的種類而異。而且要以上述切削裝置沿著切割道91切削各種半導體晶圓9時，切入深度、切削水的流量等加工條件都會依晶圓種類而異。由此可知，必須特定晶圓的種類，並設定對應所特定之晶圓的加工條件。 The size of the semiconductor wafer 9 (wafer size) and the interval of the dicing streets 91 vary depending on the type of wafer. Further, when the various semiconductor wafers 9 are cut along the dicing street 91 by the above-described cutting device, the processing conditions such as the depth of cut and the flow rate of the cutting water vary depending on the type of the wafer. From this, it is understood that it is necessary to specify the type of wafer and set the processing conditions corresponding to the specific wafer.
另一方面，半導體晶圓9的裝置92具有裝置獨特的特徵型樣，可在檢測加工區域的校準(alignment)作業中被利用。 On the other hand, the device 92 of the semiconductor wafer 9 has a unique feature pattern of the device and can be utilized in an alignment operation for detecting a processing region.
本發明是利用用於特定晶圓種類的上述特徵型樣而作成者，並製作已設定好晶圓種類、各種晶圓的特徵型樣，及加工條件(晶圓尺寸、切割道間隔、切入深度、切削水流量)之圖5所示的加工條件設定表，預先儲存在上述控制機構10的隨機存取記憶體(RAM)103中。如此進行，透過將加工條件設定表儲存在控制機構10的隨機存取記憶體(RAM)103中的作法，以完成用於透過切削裝置進行切削加工的準備作業。 The present invention is made by using the above-described characteristic patterns for a specific wafer type, and is configured to set a wafer type, a characteristic pattern of various wafers, and processing conditions (wafer size, scribe line interval, plunging depth). The processing condition setting table shown in FIG. 5 of the cutting water flow rate is stored in advance in the random access memory (RAM) 103 of the control unit 10. In this way, the preparation for storing the cutting condition by the cutting device is completed by storing the processing condition setting table in the random access memory (RAM) 103 of the control unit 10.
要以上述切削裝置實施加工作業時，是將收納有半導體晶圓9之卡匣8載置於卡匣載置台7上。並且，藉由將圖未示之作業開始開關切換至ON以開始進行作業。也就是說，透過切割膠帶T受到收納於載置在卡匣載置台7上的卡匣8的預定位置的環狀支持框架F所支撐之半導體晶圓9，可 透過圖未示之升降機構上下移動卡匣載置台7以將其定位至搬出位置。接著，進退作動被加工物搬出機構12以將定位於搬出位置之透過切割膠帶T支撐半導體晶圓9的環狀支撐框架F抓取住並搬出到暫置機構11。透過切割膠帶T被支撐在已搬出到暫置機構11的環狀支撐框架F上的半導體晶圓9，是透過第1搬送機構13被搬送至構成夾頭台3之吸著夾頭32的保持面上。搬送至夾頭台3的吸著夾頭32上的半導體晶圓9，是藉由作動圖未示之吸引機構而透過切割膠帶T被吸著夾頭32吸引保持。並且，藉由夾具33將環狀支持框架F固定。如此進行，可將吸引保持有半導體晶圓9之夾頭台3移動至攝影機構5的正下方。當將夾頭台3定位於攝影機構5的正下方時，可利用攝影機構5檢測出形成於半導體晶圓9上之切割道，並在為分度方向之箭形符號Y方向上移動調節主軸單元4，以進行精密位置對齊作業(校準步驟)。此校準步驟是以，藉由攝影機構5拍攝形成於半導體晶圓9的裝置92上的特徵型樣以求出座標值，並使切割道位於距離此座標值設計上所設定之預定距離的位置而實施。 When the machining operation is performed by the above-described cutting device, the cassette 8 in which the semiconductor wafer 9 is housed is placed on the cassette mounting table 7. Further, the job is started by switching the job start switch (not shown) to ON. In other words, the semiconductor wafer 9 supported by the annular support frame F accommodated at a predetermined position of the cassette 8 placed on the cassette mounting table 7 is received by the dicing tape T. The cassette mounting table 7 is moved up and down through a lifting mechanism (not shown) to position it to the carry-out position. Then, the workpiece moving/unloading mechanism 12 advances and retracts to grip the annular support frame F that supports the semiconductor wafer 9 through the dicing tape T positioned at the unloading position, and carries it out to the temporary mechanism 11. The semiconductor wafer 9 supported by the dicing tape T on the annular support frame F that has been carried out to the temporary mechanism 11 is transported to the holding chuck 32 constituting the chuck table 3 by the first transport mechanism 13 On the surface. The semiconductor wafer 9 transferred to the chuck 32 of the chuck table 3 is sucked and held by the chuck 32 through the dicing tape T by a suction mechanism not shown. Further, the annular support frame F is fixed by the jig 33. In this manner, the chuck table 3 that sucks and holds the semiconductor wafer 9 can be moved directly below the photographing mechanism 5. When the chuck table 3 is positioned directly below the photographing mechanism 5, the cutting path formed on the semiconductor wafer 9 can be detected by the photographing mechanism 5, and the adjustment spindle can be moved in the direction of the arrow symbol Y in the indexing direction. Unit 4 for precise position alignment (calibration steps). The calibration step is to take a feature pattern formed on the device 92 of the semiconductor wafer 9 by the photographing mechanism 5 to obtain a coordinate value, and to position the cut track at a predetermined distance from the coordinate value design. And implementation.
本發明是根據以上述校準步驟中的攝影機構5所拍攝之形成於半導體晶圓9的裝置92上的特徵型樣來特定半導體晶圓9的種類，也就是說，控制機構10是以攝影機構5所拍攝之形成於半導體晶圓9的裝置92上的特徵型樣的影像信號來與儲存於隨機存取記憶體(RAM)103之圖5所示的加工條件設定表中所設定的複數種特徵型樣做比對，以特定與影像信號有同一性之特徵型樣。例如，從攝影機構5送 來的影像信號為圖6所示之特徵型樣時，控制機構10與圖5所示之加工條件設定表中所設定之複數種特徵型樣進行比對，會特定為晶圓B。並且，控制機構10會決定將晶圓B的加工條件(晶圓尺寸：100mm、切割道間隔：5mm、切入深度：切入至膠帶5μm處、切削水流量：1L/分)作為攝影機構5所拍攝之應當加工半導體晶圓9的加工條件(加工條件決定步驟)。為了確認，可將如此進行而決定的加工條件顯示在上述顯示機構6中。 According to the present invention, the type of the semiconductor wafer 9 is specified based on the feature pattern formed on the device 92 of the semiconductor wafer 9 taken by the photographing mechanism 5 in the above-described calibration step, that is, the control mechanism 10 is a photographing mechanism. 5 image signals of the feature pattern formed on the device 92 of the semiconductor wafer 9 and a plurality of image signals set in the processing condition setting table shown in FIG. 5 stored in the random access memory (RAM) 103 The feature patterns are compared to specify a feature pattern that is identical to the image signal. For example, from the photography agency 5 When the obtained video signal is the feature pattern shown in FIG. 6, the control unit 10 compares with the plurality of feature patterns set in the processing condition setting table shown in FIG. 5, and is specified as the wafer B. Further, the control unit 10 determines the processing conditions of the wafer B (wafer size: 100 mm, kerf interval: 5 mm, plunging depth: cut into the tape 5 μm, cutting water flow rate: 1 L/min) as the photographing mechanism 5 The processing conditions (processing condition determining step) of the semiconductor wafer 9 should be processed. In order to confirm, the processing conditions determined as described above can be displayed on the display unit 6.
當實施過上述加工條件決定步驟時，控制機構10會作動圖未示之加工傳送機構以將吸引保持的半導體晶圓9定位至切割刀43之切削區域。並且，控制機構10會依據如上述所決定的加工條件，控制作為上述加工機構的主軸單元4以及圖未示之加工傳送機構等，並沿著切割道91將半導體9切斷(切削步驟)。其結果為，將半導體晶圓9分割成一個個的裝置92。所分割的裝置92由於切割膠帶T的作用並不會零亂散開，而繼續維持著受到環狀支撐框架F所支撐的半導體晶圓9之狀態。如此進行當結束半導體晶圓9的切削後，保持半導體晶圓9的夾頭台3將會退回到最初吸引保持被環狀支撐框架F所支撐的半導體晶圓9的位置，並在此處解除對半導體晶圓9的吸引保持。已於夾頭台3上將吸引保持解除之被分割成一個個的裝置92的半導體晶圓9，會被第2搬送機構15搬送到洗淨機構14。被搬送到洗淨機構14之分割成一個個的裝置之半導體晶圓W，可利用洗淨機構14將上述切削時所產生之污物洗淨去除。經洗淨機構14洗淨的半 導體晶圓9是利用上述之第1搬送機構13搬送至上述暫置機構11。被搬送到暫置機構11的半導體晶圓9，則是藉由被加工物搬出機構12收納至卡匣8的預定位置。 When the above-described processing condition determining step is carried out, the control mechanism 10 activates a processing transfer mechanism not shown to position the semiconductor wafer 9 that is attracted and held to the cutting area of the dicing blade 43. Further, the control unit 10 controls the spindle unit 4 as the above-described machining mechanism and the machining transfer mechanism (not shown) in accordance with the machining conditions determined as described above, and cuts the semiconductor 9 along the scribe line 91 (cutting step). As a result, the semiconductor wafer 9 is divided into individual devices 92. The divided device 92 continues to maintain the state of the semiconductor wafer 9 supported by the annular support frame F due to the action of the dicing tape T. When the cutting of the semiconductor wafer 9 is completed, the chuck stage 3 holding the semiconductor wafer 9 will be returned to the position where the semiconductor wafer 9 supported by the annular support frame F is initially attracted, and is released therefrom. The attraction of the semiconductor wafer 9 is maintained. The semiconductor wafer 9 that has been divided into individual devices 92 that have been suction-released on the chuck table 3 is transported to the cleaning mechanism 14 by the second transfer mechanism 15. The semiconductor wafer W that has been transported to the device divided into individual devices of the cleaning mechanism 14 can be used to clean and remove the dirt generated during the cutting by the cleaning mechanism 14. Half washed by the washing mechanism 14 The conductor wafer 9 is transported to the temporary mechanism 11 by the first transport mechanism 13 described above. The semiconductor wafer 9 transferred to the temporary mechanism 11 is stored in a predetermined position of the cassette 8 by the workpiece carrying mechanism 12.
如以上所述，圖示之實施形態中的切削裝置，由於是將利用攝影機構5所拍攝之形成於半導體晶圓9之裝置92上的特徵型樣的影像信號，與儲存於隨機存取記憶體(RAM)103之圖5所示的加工條件設定表中所設定的複數種特徵型樣進行比對，以特定與影像信號有同一性之特徵型樣，並特定為所特定之特徵型樣的晶圓種類，以將所特定之晶圓的加工條件決定為攝影機構5所拍攝之應當加工半導體晶圓9的加工條件，因此，就算是缺乏技術之操作員，也不需要依照晶圓的商品編號以及名稱特定晶圓的種類，故可使因設定錯誤的加工條件而導致裝置損傷的問題得以解決。 As described above, the cutting device in the illustrated embodiment is a video signal of a characteristic pattern formed on the device 92 of the semiconductor wafer 9 captured by the imaging unit 5, and stored in a random access memory. The plurality of feature patterns set in the processing condition setting table shown in FIG. 5 of the body (RAM) 103 are compared, and the feature pattern having the identity with the image signal is specified, and the specific feature pattern is specified. The type of wafer is determined by the processing conditions of the specified wafer as the processing conditions of the semiconductor wafer 9 to be processed by the photographing mechanism 5, and therefore, even if the operator lacks the technology, the wafer is not required. Since the product number and the name-specific wafer type can solve the problem of damage to the device due to setting of the wrong processing conditions.
以上，雖然是基於圖示之實施形態來說明本發明，但本發明並非是僅受限於實施形態者，並可在本發明的主旨範圍內做各種變化。例如，雖然於圖示的實施形態中顯示將本發明應用於切削裝置之例，但本發明也能適用於選定晶圓種類以設定雷射光線的輸出等加工條件的雷射加工裝置與其他加工裝置。 The present invention has been described above based on the embodiments shown in the drawings, but the present invention is not limited to the embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, although the embodiment in which the present invention is applied to a cutting device is shown in the illustrated embodiment, the present invention is also applicable to a laser processing apparatus and other processing that selects a wafer type to set processing conditions such as output of laser light. Device.
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| JP6955955B2 (en) * | 2017-10-12 | 2021-10-27 | 株式会社ディスコ | Wafer processing method |
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| JPS568836A (en) * | 1979-07-03 | 1981-01-29 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacturing system for semiconductor device |
| JPS6092606A (en) * | 1983-10-26 | 1985-05-24 | Nec Corp | Manufacture of semiconductor device |
| JPS62218051A (en) * | 1986-03-17 | 1987-09-25 | Okuma Mach Works Ltd | Tool discrimination device |
| JPH04164554A (en) * | 1990-10-25 | 1992-06-10 | Hitachi Seiko Ltd | Work device for printed board |
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