TWI606491B - 塗佈及接合基板之方法 - Google Patents

塗佈及接合基板之方法 Download PDF

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Publication number
TWI606491B
TWI606491B TW102128888A TW102128888A TWI606491B TW I606491 B TWI606491 B TW I606491B TW 102128888 A TW102128888 A TW 102128888A TW 102128888 A TW102128888 A TW 102128888A TW I606491 B TWI606491 B TW I606491B
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Taiwan
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average particle
particle diameter
layer
diffusion bonding
substrate
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TW102128888A
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TW201413786A (zh
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馬克斯 威普林格
柏赫德 瑞柏翰
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Ｅｖ集團Ｅ塔那有限公司
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
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    • H01—ELECTRIC ELEMENTS
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B23K20/026—Thermo-compression bonding with diffusion of soldering material
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/24—Preliminary treatment
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    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
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    • B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
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    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
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Description

塗佈及接合基板之方法
本發明係關於一種如技術方案1所述用於對第一基板塗佈第一擴散接合層之方法及一種如技術方案6所述進行接合之方法。
將基板永久或不可逆接合之目標係在該等基板之兩個接觸表面間製造儘量強力(及尤其係儘量永久)之連結，因此獲得高接合力。為達此目的，在先前技術中有各種不同方法及製造方法，尤其係較高溫下之表面熔接。
所有類型的材料(但主要係指金屬、半金屬、半導體、聚合物及/或陶瓷)係永久地接合。永久接合之最重要系統之一為金屬-金屬系統。大體上，Cu-Cu系統在近些年來日益湧現。3D結構之開發大多明確要求不同功能層之連接。此連接越來越通常係藉由所謂的TSV(矽穿孔(through silicon vias))完成。該等TSV彼此間之接觸極通常係藉由銅接觸部位進行。在接合的瞬間極通常會有全值可使用結構(例如微晶片)位於基板之一或多個表面上。由於在微晶片中使用具有不同熱膨脹係數之不同材料，故不希望在接合期間提高溫度。提高溫度可導致熱膨脹且因而導致可破壞微晶片之部件或其附近部件之熱應力及/或應力誘發空洞(SIV)。
已知製造方法及迄今一直遵循之方法通常會導致無法重現或重現不良及可能極難應用於已改變的條件之結果。特定言之，目前所採用之製造方法通常會使用高溫(尤其係>400℃)以確保重現結果。
諸如高能量消耗及存在於基板上的結構可能會被破壞之技術問題係由迄今為高接合力所需要之高溫及由於載入及/或卸載產生之快速及/或通常完全溫度變化(部分遠高於300℃)所導致。
其他要求由以下組成：
-後段製程(back-end-of-line)相容性。
此後段製程相容性定義為該製程於處理期間之相容性。該接合製程因此必須設計成使一般由已經存在於結構晶圓上的電導體及低k介電質組成之後段製程結構在處理期間既不受負面影響也不會受損壞。相容性標準主要包括機械及熱負載能力(主要承受熱應力及應力誘發空洞(SIV))。
-前段製程(front-end-of-line)相容性。
此前段製程相容性定義為該製程於製造電主動組件期間之相容性。該接合製程因此必須設計成使已經存在於結構晶圓上的主動組件(諸如電晶體)在處理期間既不受負面影響也不受損壞。相容性標準主要包括某些化學元素(主要含於CMOS結構中)之純度、機械及熱負載能力(主要承受熱應力)。
-低污染。
-不施加力，或施加儘量低的力。
-儘量低的溫度，尤其針對於具有不同熱膨脹係數之材料。
尤其當介於金屬導體之間之絕緣層係由所謂的「低k」材料製成時，接合力之減小導致更小心地處理結構晶圓且因而導致降低因直接機械負載所造成的故障機率。
目前的接合方法主要設計用於高壓及高溫。大體上避免高溫對於未來的半導體應用之熔接而言頗為重要，此乃因具有不同熱膨脹係數之不同材料產生在加熱及冷卻製程期間不可忽視之熱應力。另外，摻雜元素在溫度升高之擴散日益成為難題。所摻雜元素在摻雜製程之 後不應離開預期的三維區域。否則，電路之物理特性將基本上改變。於最佳情況中，此導致劣化，於最糟及最可能發生之情況中，會導致組件無法使用。大體上，記憶體由於熱製程期間介電質之劣化及相關聯之儲存時間之縮短所致極易受影響。另一方面，存在其中3D技術之使用日益增加提高容量及性能之記憶體。
因此，本發明之目的係設計一種以儘量高的接合力於同時儘量低之溫度及/或平均製程時間下小心製造兩個基板間永久接合之方法。
利用技術方案1及6之特徵實現此目的。本發明之適宜開發方案提供於附屬申請專利範圍中。本說明書所提供特徵中至少兩者之所有組合、申請專利範圍及/或圖式說明亦落在本發明之架構中。於給定值範圍內，落在所指示界限內之值亦將被認為是揭示作為邊界值及將以任何組合方式進行主張。
本發明之基本概念係至少在基板之一上施覆或建立具有微結構之材料之擴散接合層，該微結構具有儘量微細的晶粒，及因而具有儘量大的晶界表面。如本發明所主張，大體上，晶界以垂直到達意欲接合之基板表面為較佳。此係如本發明所主張藉由受控制設定擴散接合層之層厚度達成，該層厚度構成晶粒尺寸之限制準則。此兩個基板可(然非必需)彼此預接合。亦可行的係，在不形成預接合情況下簡單接觸。如本發明所主張，術語「反應」應理解為固體擴散。於第一及/或第二基板上形成/施覆一或多層擴散接合層之前及/或之後，一般而言，尤其以沖洗步驟進行該基板或該等基板之清潔。此清潔一般應確保表面上不存在將產生非接合部位之顆粒。理想地，如本發明所主張之所有沉積及/或接合步驟皆發生在較佳填充惰性氣體、更佳抽真空之封閉系統中以使可省略塗佈後之清潔步驟。
本發明之中心係至少於第一及第二基板間接觸表面上形成具有 小於1μm之與該接觸表面或基板表面平行之平均粒徑H之擴散接合層。
如此形成且具有小平均粒徑之該擴散接合層會產生導致較快速直接擴散於基板間接觸表面上且因而能達成主要於低溫下之永久接合進而強化該接合及提高接合速度之技術可能性。
後文中變形定義為表面及/或塊體之由於擴散所致之變化。
週期表中之所有元素(主要係金屬、半金屬、鑭系元素及錒系元素)可作為如本發明所主張用於擴散接合層之材料。
然而，本發明尤佳係用於Cu-Cu接合。
可設想將半導體之以下混合形式作為基板：
-III-V：GaP、GaAs、InP、InSb、InAs、GaSb、GaN、AlN、InN、AlxGaI-xAs、InxGaI-xN
-IV-IV：SiC、SiGe，
-III-VI：InAlP，
-非線性光學器件：LiNbO3、LiTaO3、KDP(KH2PO4)
-太陽能電池：CdS、CdSe、CdTe、CuInSe2、CuInGaSe2、CuInS2、CuInGaS2
-導電氧化物：In2-xSnxO3-y
如本發明所主張，若基板間接觸在施覆擴散接合層之後儘量接近同時(尤其在2小時內、較佳在30分鐘內、甚至更佳在10分鐘內、理想地在5分鐘內)發生則極為有利。此措施將可能的不必要反應(諸如，金屬擴散接合層或基板表面之氧化)減少至最低。
亦可在實際接合製程之前進行氧化物之移除。氧化物可例如藉由濕化學方法或對應還原氣體移除。可採用針對於氧化物還原之任何已知化學及/或物理方法。
如本發明所主張，有方法可在接觸表面之接觸之前抑制金屬擴 散接合層及/或基板表面之該等反應，尤其係藉由鈍化基板之表面，較佳藉由暴露於N2、形成氣體或惰性氛圍或於真空下，或藉由非晶化。於此方面，已證實以包含形成氣體(尤其大致上由形成氣體組成)之電漿進行處理係特別適宜。其中形成氣體定義為含有至少2%、更佳4%、理想地10%或15%氫氣之氣體。該混合物之其餘部分由諸如(例如)氮氣或氬氣之惰性氣體所組成。較佳地，具有惰性氛圍或真空氛圍之系統可經實施作為其中基板自一製程腔室至下一製程腔室之轉移係藉助可將基板完全轉移於受控可調氛圍(尤其係真空氛圍)中之基板處理系統進行之系統。該等系統為熟習本技藝者所熟知。
擴散接合層係依以下方法中之一或多種方法施覆：
-CVD，尤其係PECVD、LPCVD、MOCVD或ALD
-PVD，尤其係濺射或氣相沉積
-磊晶法，尤其係MBE、ALE
-電化學沉積製程
-無電流沉積製程
因此本發明藉由利用最上層(擴散接合層)之微結構特性解決更佳地熔接已使之彼此接觸之兩個經塗佈基板之表面之難題。本發明因而係關於一種用於藉由化學及/或物理方法以受控方式沉積薄層而調整最上沉積層之微結構以使其粒界面儘量地大之方法或製程。較佳地，該晶界通常可到達基板表面。
如本發明所主張小的晶粒尺寸會獲得極顯著增加之晶界表面且因而獲得相應較大之擴散通道；在接合期間此可促進兩個材料層之熔接。本發明所主張之概念因此係由藉由增加晶界表面來增加其等沿著晶界擴散之原子之流動組成。
根據本發明之另一有利實施例，其提供永久接合之形成係在介於室溫及400℃之間、尤其介於室溫及300℃之間、較佳介於室溫及 200℃之間、甚至更佳介於室溫及100℃之間之溫度下尤其於至多12天、較佳至多1天、甚至更佳至多1小時、最佳至多15分鐘期間發生。
其中，若不可逆接合具有大於1.5J/m2、尤其大於2J/m2、較佳大於2.5J/m2之接合強度則極為有利。可例如利用所謂的Maszara測試來測定接合強度。
接合強度可尤其有利地增加，此乃因這兩個基板具有具有如本發明所主張之極小晶粒尺寸及因而具有極大晶界表面之擴散接合層。此可實現沿兩個方向擴散流動之增加，該增加相應有助於接合製程。
若在施覆/形成功能層之前尤其藉由介於10及600kHz之間之活化頻率及/或介於0.075及0.2瓦/cm2之間之功率密度及/或藉由施加介於0.1及0.6毫巴之間之壓力進行基板表面之電漿活化，會引起額外效應(諸如接觸表面之平滑化)。其中，壓力之施加定義為操作氛圍於電漿活化期間之壓力。
若在介於0.1MPa及10MPa之間之壓力下同時施壓該等基板，可達成最佳結果。較佳地，壓力介於0.1及10MPa之間，又更佳地，介於0.1及1MPa之間，最佳地，介於0.1及0.3MPa之間。該壓力須經選擇為較大，如此越不平整且層越薄。
有利地，根據本發明之一個實施例，提出擴散接合層之形成/施覆係在真空中進行。因此，可避免擴散接合層受不必要材料或化合物污染。
假若擴散接合層較佳製成介於0.1nm及2500nm之間、更佳介於0.1nm及150nm之間、甚至更佳介於0.1nm及10nm之間、最佳介於0.1nm及5nm之間之平均厚度R，則該方法之順序特別具效益。
自較佳例示性實施例之以下說明及利用附圖當可明瞭本發明之其他優點、特徵及詳細內容。
於圖式說明中，相同或等效特徵由相同參考數字表示。附圖係非按比例的。大體上，大幾倍地顯示中間層及擴散接合層能夠更佳地表示微結構。
本發明係關於一種藉由兩個層系統2、4將兩個經塗佈基板1、3彼此接合之方法。該等層系統2、4可由任何數目的具有不同物理及/或化學特性及微結構之不同類型層5、5'、5"(中間層5'、5"及擴散接合層5)組成。如本發明所主張，此時位於最上(介於該等層系統2、4之間的接觸表面)的層為擴散接合層5，因此，為晶粒尺寸如本發明所主張受限制之層。
施覆至第一基板1之第一表面之擴散接合層5稱為第一擴散接合層及施覆至第二基板3之第二表面30者稱為第二擴散接合層。
基板1、3之表面1o、3o之平均粒徑H較佳小於1μm、更佳小於100nm、又更佳小於10nm、甚至更佳小於5nm、最佳小於1nm，該直徑以與表面平行方式突出(平面圖)。
與平均粒徑H或基板表面正交測得之平均粒徑V較佳小於1μm、更佳小於100nm、又更佳小於10nm、甚至更佳小於5nm、最佳小於1nm。
所突出之粒徑H及V不一定相同。然就極薄層厚度t而言，推測H及V為相同數量級。於此情況中，V或t限制粒徑。此乃因表面能防止晶粒擴大。於圖2所顯示之實施例中，規定垂直粒徑V以在此僅由單一擴散接合層5組成之層系統2之層厚度t限制。於是該層系統2之層厚度t等於粒徑V。
於圖4所顯示之實施例中，具有儘量大粒界面之該擴散接合層5係直接沉積於第一基板1上。
在本發明所主張如圖5所顯示之另一實施例中，具有儘量大粒界面(因此具有許多晶界)之擴散接合層5係沉積於任何其他中間層5'上。該中間層5'可為如在擴散接合層5中之具有視情況不同晶粒尺寸分佈之相同材料。尤其地，於接觸表面(擴散接合層5之表面)上之微結構僅受沉積製程影響。特定言之，該中間層5'係藉由電化學沉積製程(ECD)或PVD製程製得，反之，該擴散接合層5係藉由PVD及/或CVD製程製得。
如圖3所顯示之中間層5'具有與表面1o或3o平行之較大平均粒徑H'及橫越表面1o或3o之較大平均粒徑V'。其中，假若該中間層5'之層厚度t'比平均粒徑V更大、尤其大兩倍、較佳大3倍、更佳大5倍、又更佳大10倍、最佳大100倍、其等中最佳大1000倍，亦極為有利。
於本發明所主張如圖6所顯示之另一實施例中，另一中間層5"係沉積於該擴散接合層5與該中間層5'之間。該中間層5"具有如本發明所主張防止該擴散接合層5及該中間層5'間可能之相互擴散以使在實際接合製程之前會保持該擴散接合層5之微結構之任務。
藉由如本發明所主張兩個基板1、3透過其層系統2、4藉由至少一層擴散接合層之大粒界面(及因而大量晶界)之後續接合製程，發生原子自層系統2更為有效率地擴散至層系統4中及反之亦然。
如本發明所主張，該擴散接合層5為形成接觸表面之層。原因在 於該擴散接合層5具有極大量晶界7。因此平均擴散流動較佳係在垂直方向(橫越表面1o、3o)中順著該等晶界7發生。
物質沿一自由表面之本質擴散相較沿著晶界更大，但沿著晶界相較在塊體內更大。因此較佳地，將如本發明所主張藉由大量晶界而發生兩個層系統2及4之原子於晶界上「相互擴散」至彼此。
此兩個層系統2及4之接合較佳發生在儘量低的溫度下。就金屬而言，接合較佳發生在小於1.0之對比溫度下，但高於室溫且低於300℃溫度。
本發明所主張之層系統將尤其為下述：
-Si基板/薄擴散障壁/厚(ECD)Cu層/薄擴散障壁(例如Ti、Ta、...)/薄(PVD)Cu層
-Si基板/薄擴散障壁/厚(ECD)Cu層/薄(PVD)Cu層
-Si基板/薄擴散障壁/薄(PVD)Cu層
-Si基板/薄擴散障壁/Cu層/薄Si層
-Si基板/薄擴散障壁/Cu層/過渡金屬(Ti、Ta、W、...)之薄層
-Si基板/薄擴散障壁/Cu層/貴金屬(Au、Pd、...)之薄層
-前述層系統之任何組合
接合製程可如本發明所主張藉由將任一前述層系統接合至任何其他前述層系統進行。類似考量適用於未明確述於本文但基於相同發明概念之任何其他層系統。
如本發明所主張較佳之用於製造具有相當大晶粒尺寸(相較於擴散接合層5)之中間層5'、5"之方法為電化學沉積(ECD)。
如本發明所主張較佳之用於製造具有相當小晶粒尺寸之擴散接合層5之方法為所有PVD及/或CVD方法。
1‧‧‧第一基板
1o‧‧‧表面
2‧‧‧層系統
3‧‧‧第二基板
3o‧‧‧表面
4‧‧‧層系統
5‧‧‧擴散接合層
5'‧‧‧中間層
5"‧‧‧中間層
7‧‧‧晶界
t‧‧‧層厚度
t'‧‧‧層厚度
H‧‧‧(平均)粒徑
H'‧‧‧(平均)粒徑
V‧‧‧(平均)粒徑
V'‧‧‧(平均)粒徑
圖1顯示已如本發明所主張塗佈層系統之兩個基板之橫截面，圖2顯示如本發明所主張之擴散接合層，圖3顯示如本發明所主張之中間層，圖4顯示施覆至基板之擴散接合層，圖5顯示施覆至具有一個中間層及一個擴散接合層之基板之層系統及圖6顯示施覆至具有兩個中間層及一個擴散接合層之基板之層系統。
1‧‧‧第一基板
1o‧‧‧表面
2‧‧‧層系統
3‧‧‧第二基板
3o‧‧‧表面
4‧‧‧層系統

Claims (18)

  1. 一種對第一基板塗佈第一擴散接合層之方法，該方法包括：在該第一基板之第一表面上形成第一中間層，該第一中間層具有與該第一表面平行之平均粒徑H'及橫越該第一表面之平均粒徑V'；及在該第一中間層上沉積該第一擴散接合層，該第一擴散接合層係由第一材料形成且具有與該第一表面平行之平均粒徑H及橫越該第一表面之平均粒徑V，該平均粒徑H小於1μm，其中該平均粒徑H'大於該平均粒徑H，且其中該平均粒徑V'大於該平均粒徑V。
  2. 如請求項1之方法，其中該平均粒徑V小於1μm。
  3. 如請求項1或2之方法，其中該第一擴散接合層具有橫越該第一表面之平均厚度t，該平均厚度t小於1μm。
  4. 如請求項1或2之方法，其中該形成該第一中間層包括藉由電化學沉積法電化學沉積該第一中間層。
  5. 如請求項1或2之方法，其中該第一擴散接合層係藉由物理氣相沉積及/或化學氣相沉積而沉積。
  6. 如請求項1或2之方法，其中該第一材料係Cu。
  7. 如請求項1或2之方法，其中該第一中間層係Cu層。
  8. 如請求項1或2之方法，其中該平均粒徑H小於100nm。
  9. 一種將第一基板接合至經塗佈第二擴散接合層之第二基板之方法，其包括以下步驟：將該第一基板塗佈第一擴散接合層，該塗佈包括：在該第一基板之第一表面上形成第一中間層，該第一中間層具有與該第一表面平行之平均粒徑H'及橫越該第一表面之平均粒 徑V'；及在該第一中間層上沉積該第一擴散接合層，該第一擴散接合層係由第一材料形成且具有與該第一表面平行之平均粒徑H及橫越該第一表面之平均粒徑V，該平均粒徑H小於1μm；使該第一基板之第一擴散接合層與該第二基板之第二擴散接合層接觸；及將該等基板壓在一起形成該第一及第二基板間之永久金屬擴散接合，其中該平均粒徑H'大於該平均粒徑H，且其中該平均粒徑V'大於該平均粒徑V。
  10. 如請求項9之方法，其中該永久接合具有大於1.5J/m2之接合強度。
  11. 如請求項9或10之方法，其中該壓在一起係在介於0.1及10MPa之間之壓力下進行。
  12. 如請求項9或10之方法，其中製成第一及/或第二擴散接合層係經組態，以允許晶界擴散通過彼(等)而發生。
  13. 如請求項9或10之方法，其中該永久接合之形成係在介於室溫及500℃之間之溫度下發生，且其中該永久接合之形成係於至多12天內發生。
  14. 如請求項9或10之方法，其中該第一材料係Cu。
  15. 如請求項14之方法，其中該第一中間層係Cu層。
  16. 一種對第一基板塗佈第一擴散接合層之方法，該方法包括：在該第一基板之第一表面上形成第一中間層，該第一中間層具有與該第一表面平行之平均粒徑H'及橫越該第一表面之平均粒徑V'；在該第一中間層上形成第二中間層，該第二中間層具有與該第 一表面平行之平均粒徑H"及橫越該第一表面之平均粒徑V"；及在該第二中間層上沉積該第一擴散接合層，該第一擴散接合層係由第一材料形成且具有與該第一表面平行之平均粒徑H及橫越該第一表面之平均粒徑V，該平均粒徑H小於1μm，其中該平均粒徑H'大於該平均粒徑H，其中該平均粒徑V'大於該平均粒徑V，且其中H"係小於H'且大於H，及V"係小於V'且大於V。
  17. 如請求項16之方法，其中該第一材料係Cu。
  18. 如請求項16或17之方法，其中該第一中間層係Cu層。
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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
CN105340070B (zh) 2013-07-05 2019-08-16 Ev 集团 E·索尔纳有限责任公司 用于接合金属接触表面的方法
WO2015053193A1 (ja) * 2013-10-07 2015-04-16 古河電気工業株式会社 接合構造および電子部材接合構造体
JP6504555B2 (ja) * 2014-11-06 2019-04-24 株式会社ムサシノエンジニアリング 原子拡散接合方法及び前記方法により接合された構造体
US9865565B2 (en) * 2015-12-08 2018-01-09 Amkor Technology, Inc. Transient interface gradient bonding for metal bonds
DE102016217414A1 (de) * 2016-09-13 2018-03-15 Hema Maschinen- Und Apparateschutz Gmbh Verfahren zur Herstellung eines Verbunds aus Polycarbonat und Glas
US10037957B2 (en) 2016-11-14 2018-07-31 Amkor Technology, Inc. Semiconductor device and method of manufacturing thereof
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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077558A (en) * 1976-12-06 1978-03-07 International Business Machines Corporation Diffusion bonding of crystals
WO1994017551A1 (en) * 1993-01-19 1994-08-04 Hughes Aircraft Company Intermediate-temperature diffusion welding
WO1998041354A1 (en) 1997-03-17 1998-09-24 Hitachi, Ltd. Method of solid-phase welding members
KR100510062B1 (ko) * 1998-08-18 2005-11-03 주식회사 하이닉스반도체 티타늄 질화막 형성 방법
KR100578976B1 (ko) * 2004-10-15 2006-05-12 삼성에스디아이 주식회사 접착력이 우수한 다층 박막 및 이의 제조방법
EP1920459A4 (en) * 2005-08-12 2012-07-25 Semiconductor Energy Lab PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT
DE102005058654B4 (de) 2005-12-07 2015-06-11 Infineon Technologies Ag Verfahren zum flächigen Fügen von Komponenten von Halbleiterbauelementen
EP3595016A1 (en) * 2006-10-12 2020-01-15 Cambrios Film Solutions Corporation Nanowire-based transparent conductors and method of making them
JP5070557B2 (ja) * 2007-02-27 2012-11-14 武仁 島津 常温接合方法
KR100826284B1 (ko) * 2007-07-24 2008-04-30 (주)에피플러스 발광 다이오드 및 그 제조방법
JP5401661B2 (ja) * 2008-08-22 2014-01-29 株式会社ムサシノエンジニアリング 原子拡散接合方法及び前記方法により接合された構造体
JP2011249361A (ja) * 2010-05-21 2011-12-08 Toyota Motor Corp 半導体装置とその製造方法
JPWO2011152423A1 (ja) * 2010-05-31 2013-08-01 三洋電機株式会社 金属の接合方法
JP2014100711A (ja) 2011-02-28 2014-06-05 Sanyo Electric Co Ltd 金属接合構造および金属接合方法

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US20150224755A1 (en) 2015-08-13
CN104661786B (zh) 2017-05-24
US9358765B2 (en) 2016-06-07
CN104661786A (zh) 2015-05-27
JP2016500750A (ja) 2016-01-14
JP6290222B2 (ja) 2018-03-07
SG2014014674A (en) 2014-06-27
KR20150060666A (ko) 2015-06-03
AT525618A5 (de) 2023-04-15
KR101963933B1 (ko) 2019-03-29
TW201413786A (zh) 2014-04-01
AT525618B1 (de) 2023-07-15
DE112012006961A5 (de) 2015-06-18
WO2014048502A1 (de) 2014-04-03

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