TWI604275B - Substrate processing apparatus, device manufacturing method, and exposure method - Google Patents

Substrate processing apparatus, device manufacturing method, and exposure method Download PDF

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Publication number
TWI604275B
TWI604275B TW103119689A TW103119689A TWI604275B TW I604275 B TWI604275 B TW I604275B TW 103119689 A TW103119689 A TW 103119689A TW 103119689 A TW103119689 A TW 103119689A TW I604275 B TWI604275 B TW I604275B
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substrate
projection
optical system
exposure
illumination
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TW103119689A
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Chinese (zh)
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TW201502716A (en
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Masaki Kato
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Nippon Kogaku Kk
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)

Description

基板處理裝置、元件製造方法及曝光方法 Substrate processing apparatus, component manufacturing method, and exposure method

本發明係關於將光罩之圖案投影至基板且於該基板曝光該圖案之基板處理裝置、元件製造方法及曝光方法。 The present invention relates to a substrate processing apparatus, a device manufacturing method, and an exposure method for projecting a pattern of a photomask onto a substrate and exposing the pattern to the substrate.

有製造液晶顯示器等顯示元件或半導體等各種元件之元件製造系統。元件製造系統具備曝光裝置等基板處理裝置。基板處理裝置，係將配置於照明區域之光罩(或標線片)上所形成之圖案之像投影至配置於投影區域之基板等，將該圖案曝光於基板。用於基板處理裝置之光罩一般為平面狀者，而為了連續於基板上掃描曝光複數個元件圖案，亦已知有作成圓筒狀者(專利文獻1)。 There are component manufacturing systems that manufacture various components such as display elements such as liquid crystal displays or semiconductors. The component manufacturing system includes a substrate processing apparatus such as an exposure device. The substrate processing apparatus projects an image of a pattern formed on a mask (or a reticle) disposed in an illumination area onto a substrate disposed on a projection area, and exposes the pattern to the substrate. The reticle used for the substrate processing apparatus is generally planar, and it is also known to form a cylindrical shape in order to continuously expose a plurality of element patterns on the substrate (Patent Document 1).

又，作為基板處理裝置，有專利文獻2所記載之投影曝光裝置。專利文獻2所記載之投影曝光裝置，具有：基板保持具，係將感光基板於基板載台上保持成在一維移動方向上感光基板之表面與被投影光學系投影之圖案像之最佳成像面相對傾斜一定量；以及保持具驅動手段，係以在掃描曝光之期間沿著感光基板傾斜之方向移動之方式連動於基板載台之一維方向之移動而使基板保持具移動於投影光學系之光軸方向。投影曝光裝置，藉由上述構成，能依據一維方向之掃描曝光之位置使投射於感光基板之曝光面之光束聚焦狀態變化。 Further, as the substrate processing apparatus, there is a projection exposure apparatus described in Patent Document 2. The projection exposure apparatus described in Patent Document 2 includes a substrate holder that holds the photosensitive substrate on the substrate stage to optimally image the surface of the photosensitive substrate and the projected image projected by the projection optical system in the one-dimensional moving direction. The surface is tilted by a certain amount; and the holding means is driven to move in the one-dimensional direction of the substrate stage in a direction in which the photosensitive substrate is tilted during the scanning exposure to move the substrate holder to the projection optical system The direction of the optical axis. According to the above configuration, the projection exposure apparatus can change the focus state of the light beam projected on the exposure surface of the photosensitive substrate in accordance with the position of the scanning exposure in the one-dimensional direction.

【先行技術文獻】 [First technical literature]

[專利文獻1]國際公開2008/029917號 [Patent Document 1] International Publication No. 2008/029917

[專利文獻2]日本特許第2830492號公報 [Patent Document 2] Japanese Patent No. 2830492

如專利文獻2所記載，藉由一邊使聚焦狀態變化一邊進行曝光，在因光罩與基板之相對關係偏移或光學系之偏移等使投影光學系所投射之光束與曝光面之關係產生變化時，亦可在包含最佳聚焦位置之聚焦狀態下進行曝光。藉此，能抑制曝光於感光基板(光阻層)之像對比之變化。 As described in Patent Document 2, exposure is performed while changing the focus state, and the relationship between the light beam projected by the projection optical system and the exposure surface is caused by the relative relationship between the mask and the substrate, or the shift of the optical system. When changing, the exposure can also be performed in a focused state including the best focus position. Thereby, the change in the image contrast exposed to the photosensitive substrate (photoresist layer) can be suppressed.

然而，專利文獻2所記載之投影曝光裝置，係使用基板保持具使基板相對投影光學裝置(投影光學系)傾斜。因此，相對位置之調整(控制)變得複雜。特別是，在就基板上之複數個曝光區域(每一照射)之每一個相對掃描光罩與基板以使基板步進移動之步進掃描方式中，必須在基板上之各曝光區域之各掃描曝光高速反覆控制基板保持具之傾斜與往聚焦方向之移動，控制變得複雜且導致振動產生。 However, in the projection exposure apparatus described in Patent Document 2, the substrate holder is used to tilt the substrate relative to the projection optical device (projection optical system). Therefore, the adjustment (control) of the relative position becomes complicated. In particular, in a step-and-scan manner in which each of a plurality of exposure regions (each illumination) on the substrate is relatively scanned and the substrate is moved stepwise, each scanning region on the substrate must be scanned. The exposure high-speed repeatedly controls the tilt of the substrate holder and the movement toward the focus direction, and the control becomes complicated and causes vibration to occur.

又，掃描曝光方式之基板處理裝置，若在掃描曝光方向之基板上之曝光區域寬度較小，則賦予感光基板之曝光量變少。因此，必須增大投射於基板上之曝光區域之曝光用光之每一單位面積之照度或延遲掃描曝光之速度。相反地，若增大在掃描曝光方向之基板上之曝光區域寬度，則有時會有所形成之圖案品質(轉印忠實度)降低之情形。 Further, in the substrate processing apparatus of the scanning exposure method, when the width of the exposure region on the substrate in the scanning exposure direction is small, the amount of exposure to the photosensitive substrate is reduced. Therefore, it is necessary to increase the illuminance per unit area of the exposure light projected on the exposed area on the substrate or to delay the scanning exposure speed. Conversely, if the width of the exposure region on the substrate in the scanning exposure direction is increased, the pattern quality (transfer faithiness) formed may be lowered.

本發明之態樣，其目的在於提供能以高生產性生產高品質之基板之基板處理裝置、元件製造方法及曝光方法。 An aspect of the present invention is to provide a substrate processing apparatus, a device manufacturing method, and an exposure method capable of producing a high-quality substrate with high productivity.

根據本發明第1態樣，提供一種基板處理裝置，具備投影光 學系，其將來自配置於照明光照明區域之光罩之圖案之光束投射於配置基板之投影區域，具備：第1支承構件，係以在前述照明區域與前述投影區域中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面之方式，支承前述光罩與前述基板中之一方；第2支承構件，係以在前述照明區域與前述投影區域中之另一方區域中沿著既定之第2面之方式，支承前述光罩與前述基板中之另一方；以及移動機構，使前述第1支承構件旋轉，以使該第1支承構件所支承之前述光罩與前述基板中之任一方移動於掃描曝光方向；前述投影光學系，係在前述基板之曝光面，將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投射於前述投影區域。 According to a first aspect of the present invention, a substrate processing apparatus including projection light is provided a projection system that projects a light beam from a pattern of a mask disposed in an illumination light illumination region onto a projection area of a placement substrate, and includes: a first support member along a side of the illumination region and the projection region One of the photomask and the substrate is supported so as to be bent into a cylindrical first surface, and the second supporting member is along the other of the illumination region and the projection region. Holding the second surface of the predetermined surface, supporting the other of the photomask and the substrate; and moving the mechanism to rotate the first support member so that the photomask and the substrate supported by the first support member Either one of the projection optical systems is formed on the exposure surface of the substrate, and a light beam including two optimal focus positions in the scanning exposure direction is projected onto the projection area.

根據本發明第2態樣，提供一種元件製造方法，包含：對前 述基板處理裝置供應前述基板的動作；以及使用第1態樣所記載之基板處理裝置於前述基板形成前述光罩之圖案的動作。 According to a second aspect of the present invention, a method of manufacturing a component is provided, comprising: The operation of the substrate processing apparatus to supply the substrate, and the operation of forming the pattern of the photomask on the substrate by using the substrate processing apparatus described in the first aspect.

根據本發明第3態樣，提供一種曝光方法，將來自配置於照 明光照明區域之光罩之圖案之光束投射於配置基板之投影區域，其包含：以在前述照明區域與前述投影區域中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面之方式，支承前述光罩與前述基板中之一方的動作；以在前述照明區域與前述投影區域中之另一方區域中沿著既定之第2面之方式，支承前述光罩與前述基板中之另一方的動作；使以該第1面所支承之前述光罩與前述基板中之任一個沿著前述第1面旋轉，使以該第1面支承之前述光罩與前述基板中之任一個移動於掃描曝光方向的動作；以及在前述基板之曝光面，將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投 射於前述投影區域的動作。 According to a third aspect of the present invention, there is provided an exposure method which will be configured from a photo a light beam of a pattern of the mask of the bright illumination region is projected onto the projection area of the placement substrate, and includes: a first surface curved in a cylindrical shape with a predetermined curvature in one of the illumination region and the projection region The operation of supporting one of the photomask and the substrate, and supporting the photomask and the substrate in a manner along the predetermined second surface in the other of the illumination region and the projection region The other operation: rotating one of the photomask and the substrate supported by the first surface along the first surface, and causing either of the photomask and the substrate supported by the first surface Moving in the scanning exposure direction; and in the exposure surface of the substrate, the light beam projection including the two best focus positions in the scanning exposure direction The action of shooting in the aforementioned projection area.

根據本發明之態樣，藉由在基板之曝光面之掃描曝光方向中將包含兩處最佳聚焦位置之光束投射於投影區域，而能以高生產性生產高品質之基板。 According to the aspect of the invention, a high-quality substrate can be produced with high productivity by projecting a light beam including two optimum focus positions in the scanning exposure direction in the scanning exposure direction of the substrate.

1‧‧‧元件製造系統 1‧‧‧Component Manufacturing System

2‧‧‧基板供應裝置 2‧‧‧Substrate supply unit

4‧‧‧基板回收裝置 4‧‧‧Substrate recovery unit

5‧‧‧上位控制裝置 5‧‧‧Upper control device

11‧‧‧光罩保持機構 11‧‧‧Photomask retention mechanism

12‧‧‧基板支承機構 12‧‧‧Substrate support mechanism

13‧‧‧光源裝置 13‧‧‧Light source device

16‧‧‧下位控制裝置 16‧‧‧Lower control device

21‧‧‧光罩保持圓筒 21‧‧‧Photomask retaining cylinder

25‧‧‧基板支承圓筒 25‧‧‧Substrate support cylinder

31‧‧‧光源 31‧‧‧Light source

32‧‧‧導光構件 32‧‧‧Light guiding members

41‧‧‧1/4波長板 41‧‧‧1/4 wavelength plate

51‧‧‧準直透鏡 51‧‧‧ Collimating lens

52‧‧‧複眼透鏡 52‧‧‧Future eye lens

53‧‧‧聚光透鏡 53‧‧‧ Concentrating lens

54‧‧‧柱面透鏡 54‧‧‧ cylindrical lens

55‧‧‧照明視野光闌 55‧‧‧Lighting field of view

56‧‧‧中繼透鏡 56‧‧‧Relay lens

61‧‧‧第1光學系 61‧‧‧1st Optical Department

62‧‧‧第2光學系 62‧‧‧2nd Optical Department

63‧‧‧投影視野光闌 63‧‧‧Projected field of view

64‧‧‧聚焦修正光學構件 64‧‧‧Focus correction optical components

65‧‧‧像偏移用光學構件 65‧‧‧Optical components for offset

66‧‧‧倍率修正用光學構件 66‧‧‧ magnification correction optical components

67‧‧‧旋轉修正機構 67‧‧‧Rotation correction mechanism

68‧‧‧偏光調整機構 68‧‧‧Polarization adjustment mechanism

70‧‧‧第1偏向構件 70‧‧‧1st deflecting member

71‧‧‧第1透鏡群 71‧‧‧1st lens group

72‧‧‧第1凹面鏡 72‧‧‧1st concave mirror

80‧‧‧第2偏向構件 80‧‧‧2nd deflecting member

81‧‧‧第2透鏡群 81‧‧‧2nd lens group

82‧‧‧第2凹面鏡 82‧‧‧2nd concave mirror

110‧‧‧光罩載台 110‧‧‧Photomask stage

P‧‧‧基板 P‧‧‧Substrate

FR1‧‧‧供應用捲筒 FR1‧‧‧ supply reel

FR2‧‧‧回收用捲筒 FR2‧‧Recycling reel

U1~Un‧‧‧處理裝置 U1~Un‧‧‧Processing device

U3‧‧‧曝光裝置(基板處理裝置) U3‧‧‧Exposure device (substrate processing device)

M,MA‧‧‧光罩 M, MA‧‧‧ mask

AX1‧‧‧第1軸 AX1‧‧‧1st axis

AX2‧‧‧第2軸 AX2‧‧‧2nd axis

P1‧‧‧光罩之面 P1‧‧‧ Mask face

P2‧‧‧支承面 P2‧‧‧ bearing surface

P7‧‧‧中間像面 P7‧‧‧ intermediate image

EL1‧‧‧照明光束 EL1‧‧‧ illumination beam

EL2‧‧‧投影光束 EL2‧‧‧projection beam

Rm‧‧‧曲率半徑 Rm‧‧‧ radius of curvature

Rp‧‧‧曲率半徑 Rp‧‧ radius of curvature

CL‧‧‧中心面 CL‧‧‧ center face

PBS‧‧‧偏光分束器 PBS‧‧‧ polarizing beam splitter

IR1~IR6‧‧‧照明區域 IR1~IR6‧‧‧Lighting area

IL1~IL6‧‧‧照明光學系 IL1~IL6‧‧‧Lighting Optics

ILM‧‧‧照明光學模組 ILM‧‧‧Lighting Optical Module

PA1~PA6‧‧‧投影區域 PA1~PA6‧‧‧projection area

PLM‧‧‧投影光學模組 PLM‧‧‧Projection Optical Module

圖1係顯示第1實施形態之元件製造系統之構成的圖。 Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment.

圖2係顯示第1實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

圖3係顯示圖2所示之曝光裝置之照明區域及投影區域之配置的圖。 Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2.

圖4係顯示圖2所示之曝光裝置之照明光學系及投影光學系之構成的圖。 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2.

圖5係誇張顯示在光罩之照明光束及投影光束之狀態的圖。 Figure 5 is a diagram exaggerating the state of the illumination beam and the projected beam of the reticle.

圖6A係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 Fig. 6A is an explanatory view showing a relationship between a projection image surface of a pattern of a photomask and an exposure surface of a substrate.

圖6B係顯示在曝光寬度內之散焦量之變化之樣子的圖表。 Fig. 6B is a graph showing a change in the amount of defocus within the exposure width.

圖7係顯示第2實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 Fig. 7 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment.

圖8係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 Fig. 8 is an explanatory view showing the relationship between the projection image surface of the pattern of the photomask and the exposure surface of the substrate.

圖9係顯示曝光座標與散焦之關係一例的圖表。 Fig. 9 is a graph showing an example of the relationship between exposure coordinates and defocus.

圖10係顯示散焦與點像強度之關係一例的圖表。 Fig. 10 is a graph showing an example of the relationship between defocus and point image intensity.

圖11係顯示散焦量之變化與強度差之關係一例的圖表。 Fig. 11 is a graph showing an example of the relationship between the change in the amount of defocus and the difference in intensity.

圖12係顯示散焦量與L/S之對比變化之關係一例的圖表。 Fig. 12 is a graph showing an example of the relationship between the defocus amount and the L/S contrast change.

圖13係顯示散焦量與L/S之對比率變化之關係一例的圖表。 Fig. 13 is a graph showing an example of the relationship between the defocus amount and the L/S ratio change.

圖14係顯示散焦量與L/S之CD及截剪位準之關係一例的圖表。 Fig. 14 is a graph showing an example of the relationship between the amount of defocus and the CD and the clipping level of L/S.

圖15係顯示散焦量與孤立線之對比變化之關係一例的圖表。 Fig. 15 is a graph showing an example of the relationship between the amount of defocus and the change in the isolated line.

圖16係顯示散焦量與孤立線之對比率變化之關係一例的圖表。 Fig. 16 is a graph showing an example of the relationship between the defocus amount and the change in the ratio of the isolated lines.

圖17係顯示散焦量與孤立線之CD及截剪位準之關係一例的圖表。 Fig. 17 is a graph showing an example of the relationship between the amount of defocus and the CD and the clipping level of the isolated line.

圖18係顯示第3實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 Fig. 18 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment.

圖19係顯示第4實施形態之曝光裝置(基板處理裝置)之整體構成的圖。 Fig. 19 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

圖20係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 Fig. 20 is an explanatory view showing the relationship between the projection image surface of the pattern of the photomask and the exposure surface of the substrate.

圖21係顯示曝光方法之流程圖。 Figure 21 is a flow chart showing the exposure method.

圖22係顯示元件製造方法的流程圖。 Fig. 22 is a flow chart showing a method of manufacturing an element.

針對用以實施本發明之形態(實施形態)，參照圖面詳細的說明如下。本發明不受限於以下實施形態所記載之內容。又，以下記載之構成要素中，包含發明所屬技術領域中具有通常知識者容易想到者、亦包含實質上相同之物。此外，以下記載之構成要素可適當的加以組合。再者，在不脫離本發明要旨之範圍內可進行構成要素之各種省略、置換或變更。例如，以下實施形態中，雖作為元件係說明製造可撓性顯示器的場合，但不限定於此。作為元件，亦能製造配線基板、半導體基板等。 The embodiment (embodiment) for carrying out the invention will be described in detail below with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Further, among the constituent elements described below, those having ordinary knowledge in the technical field to which the invention pertains are easily conceivable, and substantially the same. Further, the constituent elements described below can be combined as appropriate. Further, various omissions, substitutions, and changes of the components may be made without departing from the scope of the invention. For example, in the following embodiments, a case where a flexible display is manufactured as an element is described, but the present invention is not limited thereto. As the element, a wiring board, a semiconductor board, or the like can also be manufactured.

〔第1實施形態〕 [First Embodiment]

第1實施形態之基板處理裝置係對基板施以曝光處理之曝光裝置。又，曝光裝置係組裝在對曝光後之基板施以各種處理以製造元件之元件製造系統。首先，說明元件製造系統。 The substrate processing apparatus according to the first embodiment is an exposure apparatus that applies exposure processing to a substrate. Further, the exposure apparatus is assembled in a component manufacturing system that applies various processes to the exposed substrate to manufacture components. First, the component manufacturing system will be described.

<元件製造系統> <Component Manufacturing System>

圖1係顯示第1實施形態之元件製造系統之構成的圖。圖1所示之元件製造系統1，係製造作為元件之可撓性顯示器之生產線(可撓性顯示器生產線)。作為可撓性顯示器，例如有有機EL顯示器等。此元件製造系統1，係從將可撓性基板P捲繞成捲筒狀之供應用捲筒FR1送出該基板P，並對送出之基板P連續的施以各種處理後，將處理後之基板P作為可撓性元件捲繞於回收用捲筒FR2、所謂之捲對捲(Roll to Roll)方式。第1實施形態之元件製造系統1，係顯示將成薄膜狀片材之基板P從供應用捲筒FR1送出，從供應用捲筒FR1送出之基板P，依序經n台之處理裝置U1、U2、U3、U4、U5、…Un，捲繞至回收用捲筒FR2為止之例。首先，針對作為元件製造系統1之處理對象的基板P加以說明。 Fig. 1 is a view showing the configuration of a component manufacturing system of a first embodiment. The component manufacturing system 1 shown in Fig. 1 is a production line (flexible display production line) for manufacturing a flexible display as a component. As the flexible display, for example, an organic EL display or the like is available. In the component manufacturing system 1, the substrate P is sent out from the supply reel FR1 in which the flexible substrate P is wound into a roll shape, and the processed substrate P is continuously subjected to various processes, and the processed substrate is processed. P is wound as a flexible element in the collection roll FR2, a so-called roll to roll method. In the component manufacturing system 1 of the first embodiment, the substrate P from which the film-form sheet is fed is fed from the supply reel FR1, and the substrate P sent from the supply reel FR1 is sequentially passed through n processing apparatuses U1. U2, U3, U4, U5, ... Un are wound up to the collection roll FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

基板P，例如係使用由樹脂薄膜、不鏽鋼等之金屬或合金構 成之箔(foil)等。作為樹脂薄膜之材質，例如包含聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯共聚物樹脂、聚氯乙烯樹脂、纖維素樹酯、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、乙酸乙烯酯樹脂中之1或2種以上。 For the substrate P, for example, a metal or alloy structure such as a resin film or stainless steel is used. Into the foil (foil) and so on. The material of the resin film includes, for example, a polyethylene resin, a polypropylene resin, a polyester resin, a vinyl ethylene copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin. One or more of polystyrene resin and vinyl acetate resin.

基板P，以選擇例如熱膨脹係數顯著較大、而能在對基板P 實施之各種處理中因受熱而產生之變形量可實質忽視者較佳。熱膨脹係數，例如，可藉由將無機填充物混入樹脂薄膜中，據以設定為較對應製程 溫度等之閾值小。無機填充物，可以是例如，氧化鈦、氧化鋅、氧化鋁、氧化矽等。又，基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、箔等之積層體。 The substrate P is selected such that the coefficient of thermal expansion is significantly larger, and the substrate P can be It is preferable that the amount of deformation due to heat in various treatments performed can be substantially ignored. The coefficient of thermal expansion, for example, can be set into a more corresponding process by mixing the inorganic filler into the resin film. The threshold of temperature, etc. is small. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, cerium oxide or the like. In addition, the substrate P may be a single layer body of extremely thin glass having a thickness of about 100 μm manufactured by a floating method or the like, or a laminate of the above-mentioned resin film, foil, or the like.

以此方式構成之基板P，被捲繞成捲筒狀而成為供應用捲筒 FR1，此供應用捲筒FR1被裝著於元件製造系統1。裝有供應用捲筒FR1之元件製造系統1，對從供應用捲筒FR1送出之基板P反覆實施用以製造1個元件之各種處理。因此，處理後之基板P成為複數個元件連結之狀態。 也就是說，從供應用捲筒FR1送出之基板P，為擷取多面用之基板。此外，基板P亦可以是藉由預先之既定前處理，將其表面予以改質而活性化者、或以刻印法等於表面形成用以精密圖案化之微細間隔壁構造(凹凸構造)者。 The substrate P configured in this manner is wound into a roll shape to be a supply roll FR1, this supply reel FR1 is mounted on the component manufacturing system 1. The component manufacturing system 1 equipped with the supply reel FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent from the supply reel FR1. Therefore, the processed substrate P is in a state in which a plurality of elements are connected. In other words, the substrate P sent from the supply reel FR1 is a substrate for multi-faceting. Further, the substrate P may be a person who has been modified by a predetermined pre-treatment to be activated, or a fine partition structure (concave-convex structure) formed by a marking method equal to a surface for precise patterning.

處理後之基板P，被捲繞成捲筒狀作為回收用捲筒FR2加以 回收。回收用捲筒FR2，被安裝於未圖示之切割裝置。裝有回收用捲筒FR2之切割裝置，將處理後之基板P分割(切割)成各個元件，據以成複數個元件。基板P之尺寸，例如，寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然，基板P之尺寸不限於上述尺寸。 The processed substrate P is wound into a roll shape as a recovery roll FR2. Recycling. The recovery reel FR2 is attached to a cutting device (not shown). A cutting device equipped with a recycling reel FR2 divides (cuts) the processed substrate P into individual elements, thereby forming a plurality of elements. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side) and 10 m or more in the longitudinal direction (direction of the strip). Of course, the size of the substrate P is not limited to the above size.

其次，參照圖1說明元件製造系統1。圖1中，X方向、Y 方向及Z方向成一正交之正交座標系。X方向係在水平面內連結供應用捲筒FR1及回收用捲筒FR2之方向，為圖1中之左右方向。Y方向係在水平面內與X方向正交之方向，為圖1中之前後方向。Y方向係供應用捲筒FR1及回收用捲筒FR2之軸方向。Z方向係鉛直方向，係圖1中之上下方向。 Next, the component manufacturing system 1 will be described with reference to Fig. 1 . In Figure 1, the X direction, Y The direction and the Z direction form an orthogonal orthogonal coordinate system. The X direction is a direction in which the supply reel FR1 and the recovery reel FR2 are connected in the horizontal plane, and is in the left-right direction in FIG. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the front and rear directions in FIG. The Y direction is the axial direction of the supply reel FR1 and the recovery reel FR2. The Z direction is in the vertical direction and is in the up and down direction in FIG.

元件製造系統1，具備供應基板P之基板供應裝置2、對由 基板供應裝置2供應之基板P施以各種處理之處理裝置U1~Un、回收經處理裝置U1~Un施以處理之基板P之基板回收裝置4、以及控制元件製造系統1之各裝置之上位控制裝置5。 The component manufacturing system 1 includes a substrate supply device 2 for supplying a substrate P, and a pair The substrate P supplied from the substrate supply device 2 is subjected to various processing devices U1 to Un, the substrate recovery device 4 for recovering the substrate P processed by the processing devices U1 to Un, and the upper control of each device of the control element manufacturing system 1. Device 5.

於基板供應裝置2，以可旋轉之方式安裝供應用捲筒FR1。 基板供應裝置2，具有從所安裝之供應用捲筒FR1送出基板P的驅動輥R1、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC1。驅動輥R1，一邊夾持基板P之表背兩面一邊旋轉，將基板P從供應用捲筒FR1往朝向回收用捲筒FR2之搬送方向送出，據以將基板P供應至處理裝置U1~Un。此時，邊緣位置控制器EPC1係以基板P在寬度方向端部(邊緣)之位置，相對目標位置在±十數μm至數十μm程度之範圍內之方式，使基板P移動於寬度方向，以修正基板P在寬度方向之位置。 The supply reel FR1 is rotatably mounted to the substrate supply device 2. The substrate supply device 2 has a drive roller R1 that feeds the substrate P from the attached supply spool FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while sandwiching the front and back sides of the substrate P, and feeds the substrate P from the supply reel FR1 toward the conveying reel FR2, whereby the substrate P is supplied to the processing devices U1 to Un. At this time, the edge position controller EPC1 moves the substrate P in the width direction so that the position of the substrate P at the end portion (edge) in the width direction is within a range of ± ten μm to several tens μm with respect to the target position. The position of the substrate P in the width direction is corrected.

於基板回收裝置4，以可旋轉之方式裝有回收用捲筒FR2。 基板回收裝置4，具有將處理後之基板P拉向回收用捲筒FR2側的驅動輥R2、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC2。 基板回收裝置4，一邊以驅動輥R2夾持基板P之表背兩面一邊旋轉，將基板P拉向搬送方向，並藉由使回收用捲筒FR2旋轉，據以捲繞基板P。此時，邊緣位置控制器EPC2與邊緣位置控制器EPC1同樣構成，修正基板P在寬度方向之位置，以避免基板P之寬度方向端部(邊緣)在寬度方向產生不均。 The recovery roll FR2 is rotatably mounted on the substrate recovery device 4. The substrate recovery device 4 has an edge position controller EPC2 that pulls the processed substrate P toward the recovery roll FR2 side and the position of the adjustment substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while holding the front and back surfaces of the substrate P with the driving roller R2, pulls the substrate P in the conveying direction, and rotates the collecting reel FR2 to wind the substrate P. At this time, the edge position controller EPC2 is configured similarly to the edge position controller EPC1 to correct the position of the substrate P in the width direction to prevent unevenness in the width direction of the end portion (edge) of the substrate P in the width direction.

處理裝置U1，係在從基板供應裝置2供應之基板P表面塗 布感光性機能液之塗布裝置。作為感光性機能液，例如係使用光阻劑、感 光性矽烷耦合材(親撥液性改質材)、感光性鍍敷還原材、UV硬化樹脂液等。 處理裝置U1，從基板P之搬送方向上游側起，依序設有塗布機構Gp1與乾燥機構Gp2。塗布機構Gp1，具有捲繞基板P之壓輥DR1、與和壓輥DR1對向之塗布輥DR2。塗布機構Gp1在將所供應之基板P捲繞於壓輥DR1之狀態下，以壓輥DR1及塗布輥DR2夾持基板P。接著，塗布機構Gp1藉由使壓輥DR1及塗布輥DR2旋轉，一邊使基板P移動於搬送方向、一邊以塗布輥DR2塗布感光性機能液。乾燥機構Gp2吹出熱風或乾燥空氣等之乾燥用空氣以除去感光性機能液中所含之溶質(溶劑或水)，使塗有感光性機能液之基板P乾燥，以在基板P上形成感光性機能層。 The processing device U1 is coated on the surface of the substrate P supplied from the substrate supply device 2. A coating device for photosensitive liquid. As a photosensitive functional liquid, for example, a photoresist is used, and a feeling is used. A photo-decane coupling material (a liquid-replenishing material), a photosensitive plating reduction material, a UV-curing resin liquid, or the like. The processing apparatus U1 is provided with the application mechanism Gp1 and the drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the board|substrate P. The coating mechanism Gp1 has a pressure roller DR1 that winds the substrate P, and a coating roller DR2 that faces the pressure roller DR1. The coating mechanism Gp1 sandwiches the substrate P with the pressure roller DR1 and the application roller DR2 while the supplied substrate P is wound around the pressure roller DR1. Then, the application mechanism Gp1 rotates the pressure roller DR1 and the application roller DR2 to apply the photosensitive functional liquid by the application roller DR2 while moving the substrate P in the conveyance direction. The drying mechanism Gp2 blows drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid to form photosensitivity on the substrate P. Functional layer.

處理裝置U2，係為了使形成在基板P表面之感光性機能層 安定，而將從處理裝置U1搬送之基板P加熱至既定温度(例如，數10~120℃程度)之加熱裝置。處理裝置U2，從基板P之搬送方向上游側起依序設有加熱室HA1與冷卻室HA2。加熱室HA1，於其內部設有複數個輥及複數個空氣翻轉桿(air turn bar)，複數個輥及複數個空氣翻轉桿構成基板P之搬送路徑。複數個輥以滾接於基板P背面之方式設置，複數個空氣翻轉桿以非接觸狀態設於基板P之表面側。複數個輥及複數個空氣翻轉桿為加長基板P之搬送路徑，而呈蛇行狀之搬送路徑。通過加熱室HA1內之基板P，一邊沿蛇行狀之搬送路徑被搬送、一邊被加熱至既定温度。冷卻室HA2，為使在加熱室HA1加熱之基板P之温度與後製程(處理裝置U3)之環境温度一致，而將基板P冷卻至環境温度。冷卻室HA2，其內部設有複數個輥，複數個輥，與加熱室HA1同樣的，為加長基板P之搬送路徑而呈蛇行狀搬送路徑之配置。通過冷卻室HA2內之基板P，一邊沿蛇行狀之搬送路徑被搬 送一邊被冷卻。於冷卻室HA2之搬送方向下游側設有驅動輥R3，驅動輥R3一邊夾持通過冷卻室HA2之基板P一邊旋轉，據以將基板P供應向處理裝置U3。此外，加熱室HA1對基板P之加熱，在基板P為PET(聚對苯二甲酸乙二酯)或PEN(聚2，6萘二甲酸乙二酯)等樹脂膜之場合，可設定為不超過其玻璃轉移溫度。 The processing device U2 is for forming a photosensitive functional layer on the surface of the substrate P. The substrate P heated from the processing apparatus U1 is heated to a heating device of a predetermined temperature (for example, about 10 to 120 ° C). The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the transport direction of the substrate P. The heating chamber HA1 has a plurality of rollers and a plurality of air turn bars therein, and the plurality of rollers and the plurality of air flip bars constitute a transport path of the substrate P. A plurality of rollers are provided to be rolled on the back surface of the substrate P, and a plurality of air flip bars are provided on the surface side of the substrate P in a non-contact state. The plurality of rollers and the plurality of air flip levers are transport paths for lengthening the substrate P, and are in a serpentine transport path. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along the meandering conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature in order to match the temperature of the substrate P heated in the heating chamber HA1 with the ambient temperature of the post-processing (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers therein, and a plurality of rollers are arranged in a serpentine transport path in the same manner as the heating chamber HA1 in order to lengthen the transport path of the substrate P. The substrate P in the cooling chamber HA2 is moved along the meandering conveyance path The side is cooled. The drive roller R3 is provided on the downstream side in the conveyance direction of the cooling chamber HA2, and the drive roller R3 is rotated while sandwiching the substrate P passing through the cooling chamber HA2, whereby the substrate P is supplied to the processing apparatus U3. Further, the heating chamber HA1 heats the substrate P, and when the substrate P is a resin film such as PET (polyethylene terephthalate) or PEN (polyethylene 2,6 naphthalate), it can be set to no. Exceeding its glass transition temperature.

處理裝置(基板處理裝置)U3，係對從處理裝置U2供應、 表面形成有感光性機能層之基板(感光基板)P，投影曝光顯示器用電路或配線等圖案之曝光裝置。詳細將留待後敘，處理裝置U3以照明光束照明反射型之光罩M，將藉由照明光束被光罩M反射所得之投影光束投影曝光於基板P。處理裝置U3，具有將從處理裝置U2供應之基板P送往搬送方向下游側的驅動輥R4、與調整基板P在寬度方向(Y方向)之位置的邊緣位置控制器EPC3。驅動輥R4藉由在夾持基板P之表背兩面之同時進行旋轉，將基板P送向搬送方向下游側，據以將基板P朝在曝光位置支承之基板支承捲筒(旋轉捲筒(亦稱旋轉捲筒)供應。 The processing device (substrate processing device) U3 is supplied from the processing device U2, A substrate (photosensitive substrate) P on which a photosensitive functional layer is formed on the surface, and an exposure device that projects a pattern such as a circuit or a wiring for exposure display. As will be described later in detail, the processing device U3 illuminates the reflective mask M with an illumination beam, and projects a projection beam that is reflected by the illumination beam by the mask M onto the substrate P. The processing device U3 has a drive roller R4 that feeds the substrate P supplied from the processing device U2 to the downstream side in the transport direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R4 rotates while holding the front and back surfaces of the substrate P, and feeds the substrate P to the downstream side in the conveying direction, whereby the substrate P is supported toward the substrate supported by the exposure position (rotating reel (also Said to rotate the reel) supply.

邊緣位置控制器EPC3與邊緣位置控制器EPC1同樣構成， 修正基板P在寬度方向之位置，以使在曝光位置(基板支承捲筒)之基板P之寬度方向成為目標位置。又，處理裝置U3具有在對曝光後基板P賦予鬆弛之狀態下，將基板P送往搬送方向下游側之2組驅動輥R5、R6。2組驅動輥R5、R6在基板P之搬送方向隔著既定間隔配置。驅動輥R5夾持搬送之基板P之上游側旋轉、驅動輥R6夾持搬送之基板P之下游側旋轉，據以將基板P供應向處理裝置U4。此時，由於基板P已被賦予鬆弛，因此能吸收在較驅動輥R6位於搬送方向下游側所產生之搬送速度之變動，能切斷搬送 速度之變動對基板P之曝光處理之影響。此外，於處理裝置U3內設有為進行光罩M之光罩圖案之一部分之像與基板P之相對位置對準(alignment)而檢測預先形成在基板P之對準標記等之對準顯微鏡AM1、AM2。 The edge position controller EPC3 is constructed in the same manner as the edge position controller EPC1. The position of the substrate P in the width direction is corrected so that the width direction of the substrate P at the exposure position (substrate support roll) becomes the target position. Further, the processing apparatus U3 has two sets of driving rollers R5 and R6 that are sent to the downstream side in the transport direction in a state in which the substrate P is exposed to be relaxed. The two sets of driving rollers R5 and R6 are separated in the transport direction of the substrate P. The scheduled interval configuration. The driving roller R5 rotates on the upstream side of the substrate P that is conveyed and conveyed, and the downstream side of the substrate P that is conveyed by the driving roller R6 rotates, whereby the substrate P is supplied to the processing device U4. In this case, since the substrate P is provided with slack, it is possible to absorb the fluctuation of the conveyance speed which is generated on the downstream side of the drive roller R6 in the conveyance direction, and it is possible to cut off the conveyance. The effect of the change in speed on the exposure processing of the substrate P. Further, in the processing device U3, an alignment microscope AM1 for detecting an alignment mark or the like formed in advance on the substrate P is provided for alignment of an image of a portion of the mask pattern of the mask M with the substrate P. , AM2.

處理裝置U4，係對從處理裝置U3搬送而來之曝光後之基 板P，進行濕式之顯影處理、無電電鍍處理等之濕式處理裝置。處理裝置U4，於其內部具有於鉛直方向(Z方向)階段化之3個處理槽BT1、BT2、BT3、與搬送基板P之複數個輥。複數個輥係以基板P依序通過3個處理槽BT1、BT2、BT3內部之搬送路徑的方式配置。於處理槽BT3之搬送方向下游側設有驅動輥R7，驅動輥R7藉由一邊夾持通過處理槽BT3後之基板P一邊旋轉，據以將基板P供應向處理裝置U5。 The processing device U4 is based on the exposure after being transferred from the processing device U3. The plate P is a wet processing apparatus which performs a wet development process, an electroless plating process, or the like. The processing apparatus U4 has three processing tanks BT1, BT2, and BT3 which are stepped in the vertical direction (Z direction) and a plurality of rollers that transport the substrate P. The plurality of rollers are arranged such that the substrate P sequentially passes through the transport paths inside the three processing tanks BT1, BT2, and BT3. A driving roller R7 is provided on the downstream side in the conveying direction of the processing tank BT3, and the driving roller R7 is rotated while sandwiching the substrate P that has passed through the processing tank BT3, whereby the substrate P is supplied to the processing apparatus U5.

雖省略圖示，但處理裝置U5係使從處理裝置U4搬送而來 之基板P乾燥的乾燥裝置。處理裝置U5，將在處理裝置U4濕式處理而附著於基板P之液滴或霧滴(MIST)除去，且將基板P之水分含有量調整成既定之水分含有量。由處理裝置U5加以乾燥之基板P，經由若干個處理裝置後被搬送至處理裝置Un。在以處理裝置Un加以處理後，基板P即被捲繞於基板回收裝置4之回收用捲筒FR2。 Although not shown, the processing device U5 is transported from the processing device U4. Drying device for drying the substrate P. The processing device U5 removes the droplets or droplets (MIST) adhering to the substrate P by the processing device U4, and adjusts the moisture content of the substrate P to a predetermined moisture content. The substrate P dried by the processing device U5 is transported to the processing device Un via a plurality of processing devices. After being processed by the processing apparatus Un, the substrate P is wound around the collection reel FR2 of the substrate recovery apparatus 4.

上位控制裝置5，統籌控制基板供應裝置2、基板回收裝置 4及複數個處理裝置U1~Un。上位控制裝置5控制基板供應裝置2及基板回收裝置4，將基板P從基板供應裝置2搬送向基板回收裝置4。又，上位控制裝置5，與基板P之搬送同步，控制複數個處理裝置U1~Un，以實施對基板P之各種處理。 The upper control device 5, the integrated control substrate supply device 2, the substrate recovery device 4 and a plurality of processing devices U1~Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4, and transports the substrate P from the substrate supply device 2 to the substrate recovery device 4. Further, the upper control device 5 controls a plurality of processing devices U1 to Un in synchronization with the transfer of the substrate P to perform various processes on the substrate P.

<曝光裝置(基板處理裝置)> <Exposure device (substrate processing device)>

其次，針對作為第1實施形態之處理裝置U3之曝光裝置(基板處理裝置)之構成，參照圖2至圖4加以說明。圖2係顯示第1實施形態之曝光裝置(基板處理裝置)之整體構成的圖。圖3係顯示圖2所示曝光裝置之照明區域及投影區域之配置的圖。圖4係顯示圖2所示之曝光裝置之照明光學系及投影光學系之構成的圖。以下將處理裝置U3稱為曝光裝置U3。 Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to Figs. 2 to 4 . Fig. 2 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. Fig. 3 is a view showing the arrangement of an illumination area and a projection area of the exposure apparatus shown in Fig. 2. 4 is a view showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus shown in FIG. 2. Hereinafter, the processing device U3 will be referred to as an exposure device U3.

圖2所示之曝光裝置U3係所謂的掃描曝光裝置，一邊將基 板P往搬送方向(掃描方向)搬送、一邊將形成在圓筒狀光罩M之外周面之光罩圖案之像，投影曝光至基板P表面。又，圖2中係X方向、Y方向及Z方向正交之正交座標系，與圖1為同樣之正交座標系。 The exposure device U3 shown in Fig. 2 is a so-called scanning exposure device, and the base is The sheet P is conveyed in the conveyance direction (scanning direction), and the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M is projected onto the surface of the substrate P. In addition, in FIG. 2, the orthogonal coordinate system orthogonal to the X direction, the Y direction, and the Z direction is the same orthogonal coordinate system as that of FIG.

首先，說明用於曝光裝置U3之光罩M。光罩M係例如使 用金屬製圓筒體之反射型光罩。光罩M係形成為具有以延伸於Y方向之第1軸AX1為中心之曲率半徑Rm之外周面(圓周面)的圓筒體，於徑方向具有一定厚度。光罩M之圓周面係形成有既定光罩圖案之面P1。光罩M之面P1，包含將光束以高效率反射於既定方向之高反射部、與於既定方向不反射光束或以低效率反射之反射抑制部。光罩圖案以高反射部及反射抑制部形成。因此，反射抑制部亦可吸收光，亦可透射，亦可往既定方向以外反射(例如散射)。此處之光罩M，能將反射抑制部以吸收光之材料或使光透射之材料構成。曝光裝置U3能使用以金屬之圓筒體作成之光罩作為上述構成之光罩M。因此，曝光裝置U3能使用廉價之光罩來進行曝光。 First, the mask M for the exposure device U3 will be described. The mask M is for example made A reflective mask made of a metal cylindrical body. The mask M is formed into a cylindrical body having a peripheral surface (circumferential surface) other than the curvature radius Rm extending around the first axis AX1 in the Y direction, and has a constant thickness in the radial direction. The circumferential surface of the mask M is formed with a surface P1 of a predetermined mask pattern. The surface P1 of the mask M includes a high reflection portion that reflects the light beam in a predetermined direction with high efficiency, and a reflection suppression portion that does not reflect the light beam in a predetermined direction or is reflected with low efficiency. The mask pattern is formed by a high reflection portion and a reflection suppressing portion. Therefore, the reflection suppressing portion can also absorb light, transmit light, or reflect (for example, scatter) outside the predetermined direction. Here, the mask M can be configured such that the reflection suppressing portion is made of a material that absorbs light or a material that transmits light. As the exposure device U3, a photomask made of a metal cylindrical body can be used as the photomask M having the above configuration. Therefore, the exposure device U3 can perform exposure using an inexpensive photomask.

此外，光罩M可以是形成有對應1個顯示元件之面板用圖案之全體或一部分、亦可以是形成有對應複數個顯示元件之面板用圖案。又，光罩M可以是在繞第1軸AX1之周方向反覆形成複數個面板用圖案、 亦可以是小型的面板用圖案在與第1軸AX1平行之方向反覆形成複數個。 再者，於光罩M，亦可以是形成有第1顯示元件之面板用圖案與和第1顯示元件尺寸等不同之第2顯示元件之面板用圖案。又，光罩M只要是具有以第1軸AX1為中心之曲率半徑Rm之圓周面即可，並不限定於圓筒體之形狀。例如，光罩M可以是具有圓周面之圓弧狀板材。此外，光罩M可以是薄板狀、亦可以是使薄板狀光罩M彎曲而以順著圓周面之方式貼附於圓筒構件。 Further, the mask M may be a whole or a part of a pattern for forming a panel corresponding to one display element, or may be a pattern for a panel on which a plurality of display elements are formed. Further, the mask M may be formed by repeatedly forming a plurality of panel patterns in the circumferential direction around the first axis AX1. Alternatively, the small panel pattern may be formed in plural in a direction parallel to the first axis AX1. Further, the mask M may be a panel pattern in which a pattern for a panel of the first display element and a second display element having a size different from that of the first display element are formed. In addition, the mask M is not limited to the shape of the cylindrical body as long as it has a circumferential surface having a radius of curvature Rm around the first axis AX1. For example, the reticle M may be an arc-shaped plate material having a circumferential surface. Further, the mask M may be in the form of a thin plate, or the thin plate-shaped mask M may be bent to be attached to the cylindrical member along the circumferential surface.

其次，說明圖2所示之曝光裝置U3。曝光裝置U3，除上述 驅動輥R4~R6、邊緣位置控制器EPC3及對準顯微鏡AM1、AM2之外，亦具有光罩保持機構11、基板支承機構12、照明光學系IL、投影光學系PL、以及下位控制裝置16。曝光裝置U3，藉由將從光源裝置13射出之照明光透過照明光學系IL及投影光學系PL來導引，而將光罩保持機構11所保持之光罩M之圖案之光束投射至以基板支承機構12保持之基板P。 Next, the exposure device U3 shown in Fig. 2 will be described. Exposure device U3, in addition to the above In addition to the driving rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM2, the mask holding mechanism 11, the substrate supporting mechanism 12, the illumination optical system IL, the projection optical system PL, and the lower position control device 16 are also provided. The exposure device U3 is guided by the illumination light emitted from the light source device 13 through the illumination optical system IL and the projection optical system PL, and the light beam of the pattern of the mask M held by the mask holding mechanism 11 is projected onto the substrate. The substrate P held by the support mechanism 12.

下位控制裝置16控制曝光裝置U3之各部，使各部實施處 理。下位控制裝置16可以是元件製造系統1之上位控制裝置5之一部分或全部。又，下位控制裝置16亦可以是受上位控制裝置5控制、與上位控制裝置5不同之另一裝置。下位控制裝置16，例如包含電腦。 The lower control device 16 controls each part of the exposure device U3 so that each part is implemented Reason. The lower control device 16 may be part or all of the upper control device 5 of the component manufacturing system 1. Further, the lower control device 16 may be another device that is controlled by the higher-level control device 5 and is different from the higher-level control device 5. The lower control device 16, for example, includes a computer.

光罩保持機構11，具有保持光罩M之光罩保持圓筒(光罩 保持構件)21、與使光罩保持圓筒21旋轉之第1驅動部22。光罩保持圓筒21將光罩M保持成以光罩M之第1軸AX1為旋轉中心。第1驅動部22連接於下位控制裝置16，以第1軸AX1為旋轉中心使光罩保持圓筒21旋轉。 The mask holding mechanism 11 has a mask holding cylinder for holding the mask M (mask The holding member 21 and the first driving portion 22 that rotates the photoreceptor holding cylinder 21. The mask holding cylinder 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first drive unit 22 is connected to the lower control device 16 and rotates the mask holding cylinder 21 with the first axis AX1 as a center of rotation.

此外，光罩保持機構11雖係以光罩保持圓筒21保持圓筒體 之光罩M，但不限於此構成。光罩保持機構11亦可順著光罩保持圓筒21之外周面將薄板狀之光罩M捲繞保持。此外，光罩保持機構11，亦可將圓弧狀板材之光罩M可拆裝地保持於光罩保持圓筒21之外周面。 Further, the mask holding mechanism 11 holds the cylinder by the mask holding cylinder 21 The mask M is not limited to this configuration. The mask holding mechanism 11 can also wind and hold the thin mask-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. Further, the mask holding mechanism 11 can detachably hold the mask M of the arc-shaped plate material on the outer circumferential surface of the mask holding cylinder 21.

基板支承機構12，具有以圓筒狀之外周面支承基板P並能 旋轉之基板支承圓筒25、使基板支承圓筒25旋轉之第2驅動部26、一對空氣翻轉桿(air turn bar)ATB1、ATB2、以及一對導輥27、28。基板支承圓筒25係形成為具有以延伸於Y方向之第2軸AX2為中心之曲率半徑Rp之外周面(圓周面)的圓筒形狀。此處，第1軸AX1與第2軸AX2彼此平行，並以通過第1軸AX1及第2軸AX2之面為中心面CL。基板支承圓筒25之圓周面之一部分為支承基板P之支承面P2。也就是說，基板支承圓筒25係藉由將基板P捲繞於其支承面P2，據以支承基板P。第2驅動部26連接於下位控制裝置16，以第2軸AX2為旋轉中心使基板支承圓筒25旋轉。 The substrate supporting mechanism 12 has a cylindrical outer peripheral surface supporting the substrate P and capable of The rotating substrate supporting cylinder 25, the second driving portion 26 for rotating the substrate supporting cylinder 25, a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27, 28. The substrate supporting cylinder 25 is formed in a cylindrical shape having a peripheral surface (circumferential surface) other than the curvature radius Rp extending around the second axis AX2 in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and the surface passing through the first axis AX1 and the second axis AX2 is the center plane CL. One of the circumferential faces of the substrate supporting cylinder 25 is a supporting surface P2 of the supporting substrate P. That is, the substrate supporting cylinder 25 supports the substrate P by winding the substrate P around its supporting surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as a center of rotation.

一對空氣翻轉桿ATB1、ATB2隔著基板支承圓筒25，分別 設在基板P之搬送方向上游側及下游側。一對空氣翻轉桿ATB1、ATB2，設於基板P之表面側，在鉛直方向(Z方向)中配置於較基板支承圓筒25之支承面P2更下方側。一對導輥27、28，隔著一對空氣翻轉桿ATB1、ATB2，分別設在基板P之搬送方向上游側及下游側。一對導輥27、28，其一方之導輥27將從驅動輥R4搬送而來之基板P導引至空氣翻轉桿ATB1，另一方之導輥28將從空氣翻轉桿ATB2搬送而來之基板P導引至驅動輥R5。 A pair of air flip levers ATB1 and ATB2 are respectively supported by the substrate supporting cylinder 25, respectively It is provided on the upstream side and the downstream side in the transport direction of the substrate P. The pair of air flip levers ATB1 and ATB2 are provided on the surface side of the substrate P, and are disposed on the lower side of the support surface P2 of the substrate support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are respectively disposed on the upstream side and the downstream side in the transport direction of the substrate P via the pair of air flip levers ATB1 and ATB2. The pair of guide rolls 27 and 28, one of the guide rolls 27 guides the substrate P transported from the drive roll R4 to the air flip lever ATB1, and the other guide roller 28 transports the substrate from the air flip lever ATB2. P is guided to the driving roller R5.

承上所述，基板支承機構12將從驅動輥R4搬送而來之基 板P，以導輥27引導至空氣翻轉桿ATB1，將通過空氣翻轉桿ATB1之基板P導入基板支承圓筒25。基板支承機構12，以第2驅動部26使基板支承圓 筒25旋轉，據以將導入基板支承圓筒25之基板P一邊以基板支承圓筒25之支承面P2加以支承、一邊搬送向空氣翻轉桿ATB2。基板支承機構12，將被搬送至空氣翻轉桿ATB2之基板P以空氣翻轉桿ATB2引導至導輥28，將通過導輥28之基板P引導至驅動輥R5。 As described above, the substrate supporting mechanism 12 will be transported from the driving roller R4. The plate P is guided to the air turning lever ATB1 by the guide roller 27, and the substrate P passing through the air turning lever ATB1 is introduced into the substrate supporting cylinder 25. The substrate supporting mechanism 12 supports the substrate by the second driving unit 26 The cylinder 25 is rotated, and the substrate P introduced into the substrate supporting cylinder 25 is supported by the support surface P2 of the substrate supporting cylinder 25 and transported to the air turning lever ATB2. The substrate supporting mechanism 12 guides the substrate P conveyed to the air turning lever ATB2 to the guide roller 28 by the air turning lever ATB2, and guides the substrate P passing through the guide roller 28 to the driving roller R5.

此時，連接於第1驅動部22及第2驅動部26之下位控制裝 置16，使光罩保持圓筒21與基板支承圓筒25以既定旋轉速度比同步旋轉，將形成在光罩M之面P1之光罩圖案之像，連續的反覆投影曝光於捲繞在基板支承圓筒25之支承面P2之基板P表面(順著圓周面彎曲之面)。 At this time, it is connected to the lower driving device of the first driving unit 22 and the second driving unit 26 In a predetermined manner, the mask holding cylinder 21 and the substrate supporting cylinder 25 are synchronously rotated at a predetermined rotational speed ratio, and the image of the mask pattern formed on the surface P1 of the mask M is continuously projected and exposed on the substrate. The surface of the substrate P of the support surface P2 of the support cylinder 25 (the surface curved along the circumferential surface).

光源裝置13，射出照明於光罩M之照明光束EL1。光源裝 置13具有光源31與導光構件32。光源31係射出既定波長之光源。光源31可利用例如水銀燈等燈光源或雷射二極體、發光二極體(LED)等。光源31所射出之照明光係例如從燈光源射出之輝線(g線、h線、i線等)、KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)、ArF準分子雷射光(波長193nm)等。此處之光源31最好係射出包含i線(365nm之波長)以下之波長之照明光束EL1。作為產生i線以下之波長之照明光束EL1的光源31，能使用從YAG雷射(第3諧波雷射)射出之雷射光(355nm之波長)、從YAG雷射(第4諧波雷射)射出之雷射光(266nm之波長)、或從KrF準分子雷射射出之雷射光(248nm之波長)等。 The light source device 13 emits an illumination light beam EL1 that is illuminated by the mask M. Light source The arrangement 13 has a light source 31 and a light guiding member 32. The light source 31 emits a light source of a predetermined wavelength. The light source 31 can use a light source such as a mercury lamp, a laser diode, a light emitting diode (LED), or the like. The illumination light emitted from the light source 31 is, for example, a bright line (g line, h line, i line, etc.) emitted from a light source, far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), or ArF excimer laser light. (wavelength 193 nm) and the like. Here, the light source 31 preferably emits an illumination light beam EL1 including a wavelength below the i-line (wavelength of 365 nm). As the light source 31 that generates the illumination light beam EL1 having a wavelength below the i-line, laser light (wavelength of 355 nm) emitted from the YAG laser (third harmonic laser) and laser light from the YAG (fourth harmonic laser) can be used. ) Laser light emitted (wavelength of 266 nm) or laser light (wavelength of 248 nm) emitted from a KrF excimer laser.

導光構件32將從光源31射出之照明光束EL1導至照明光學 系IL。導光構件32係以使用光纖或反射鏡之中繼模組等構成。又，導光構件32，在照明光學系IL設有複數個之情形時，係將來自光源31之照明光束EL1分離為複數條後，將複數條照明光束EL1導向複數個照明光學系IL。 又，導光構件32，本實施形態之導光構件32，係使從光源31射出之照明光束EL1成為既定偏光狀態之光而射入偏光分束器PBS。本實施形態之偏光分束器PBS反射作為S偏光之直線偏光之光束，使作為P偏光之直線偏光之光束透射。因此，光源裝置13係射出射入偏光分束器PBS之照明光束EL1成為直線偏光(S偏光)之照明光束EL1。 The light guiding member 32 leads the illumination light beam EL1 emitted from the light source 31 to the illumination optical Is IL. The light guiding member 32 is configured by a relay module or the like using an optical fiber or a mirror. Further, when a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination light beams EL1 from the light source 31 into a plurality of stripes, and then directs the plurality of illumination light beams EL1 to the plurality of illumination optical systems IL. Further, in the light guiding member 32, the light guiding member 32 of the present embodiment causes the illumination light beam EL1 emitted from the light source 31 to enter the polarization beam splitter PBS in a predetermined polarization state. The polarization beam splitter PBS of the present embodiment reflects a linearly polarized light beam that is S-polarized light, and transmits a linearly polarized light beam that is P-polarized light. Therefore, the light source device 13 emits the illumination light beam EL1 that is incident on the polarization beam splitter PBS and becomes linearly polarized (S-polarized).

光源裝置13對偏光分束器PBS射出波長及相位一致之偏光 雷射。例如，光源裝置13在從光源31射出之光束為偏光後之光的場合，係使用偏波面保存光纖作為導光構件32，維持從光源裝置13輸出之雷射光之偏光狀態來導光。又，例如亦可以光纖導引從光源31輸出之光束，以偏光板使從光纖輸出之光偏光。亦即，光源裝置13，在導引隨機偏光之光束時，亦可以偏光板使隨機偏光之光束偏光，亦可使用偏光分束器PBS分歧成P偏向與S偏向之各光束，使透射該偏光分束器PBS之光作為射入一系統之照明光學系IL之光束使用，使在該偏光分束器PBS反射之光作為射入另一系統之照明光學系IL的光束使用。又，光源裝置13亦可藉由使用透鏡等之中繼光學系導引從光源31輸出之光束。 The light source device 13 emits polarized light having the same wavelength and phase to the polarization beam splitter PBS. Laser. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses a polarization-preserving optical fiber as the light guiding member 32, and maintains the polarization state of the laser light output from the light source device 13 to guide the light. Further, for example, the optical fiber may guide the light beam output from the light source 31, and the polarizing plate may polarize the light output from the optical fiber. In other words, when the light source device 13 guides the beam of the random polarized light, the polarizing plate may polarize the beam of the random polarized light, or the polarizing beam splitter PBS may be divided into the P-biased and S-biased beams to transmit the polarized light. The light of the beam splitter PBS is used as a light beam incident on the illumination optical system IL of one system, and the light reflected by the polarization beam splitter PBS is used as a light beam incident on the illumination optical system IL of the other system. Further, the light source device 13 can also guide the light beam output from the light source 31 by using a relay optical system such as a lens.

此處，如圖3所示，第1實施形態之曝光裝置U3，係假定 所謂之多透鏡(multi lens)方式之曝光裝置。又，圖3中，顯示了從-Z側觀察光罩保持圓筒21所保持之光罩M上之照明區域IR的俯視圖(圖3之左圖)、與從+Z側觀察基板支承圓筒25所支承之基板P上之投影區域PA的俯視圖(圖3之右圖)。圖3之符號Xs，代表光罩保持圓筒21及基板支承圓筒25之移動方向(旋轉方向)。多透鏡方式之曝光裝置U3，係於光罩M上之複數個(第1實施形態中，例如係6個)照明區域IR1~IR6分別照 明照明光束EL1，將各照明光束EL1在各照明區域IR1~IR6反射所得之複數個投影光束EL2，投影曝光至基板P上複數個(第1實施形態中，例如係6個)投影區域PA1~PA6。 Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment assumes The so-called multi-lens type exposure device. Further, in Fig. 3, a plan view (left view of Fig. 3) of the illumination region IR on the mask M held by the mask holding cylinder 21 is observed from the -Z side, and the substrate support cylinder is viewed from the +Z side. A plan view of the projection area PA on the substrate P supported by 25 (the right side of Fig. 3). The symbol Xs of Fig. 3 represents the moving direction (rotational direction) of the mask holding cylinder 21 and the substrate supporting cylinder 25. The multi-lens type exposure device U3 is attached to the mask M (in the first embodiment, for example, six), and the illumination areas IR1 to IR6 are respectively taken. The plurality of projection light beams EL2 obtained by reflecting the illumination light beams EL1 in the respective illumination regions IR1 to IR6 are projected onto the substrate P by a plurality of projection light beams EL1 (for example, six in the first embodiment). PA6.

首先，說明以照明光學系IL照明之複數個照明區域IR1~ IR6。如圖3所示，複數個照明區域IR1~IR6係隔著中心面CL於旋轉方向上游側之光罩M上配置第1照明區域IR1、第3照明區域IR3及第5照明區域IR5，於旋轉方向下游側之光罩M上配置第2照明區域IR2、第4照明區域IR4及第6照明區域IR6。各照明區域IR1~IR6係具有延伸於光罩M之軸方向(Y方向)之平行的短邊及長邊之細長梯形之區域。此時，梯形之各照明區域IR1~IR6係成一其短邊位於中心面CL側、其長邊位於外側之區域。第1照明區域IR1、第3照明區域IR3及第5照明區域IR5，於軸方向相隔既定間隔配置。又，第2照明區域IR2、第4照明區域IR4及第6照明區域IR6亦於軸方向相隔既定間隔配置。此時，第2照明區域IR2，於軸方向係配置在第1照明區域IR1與第3照明區域IR3之間。同樣的，第3照明區域IR3，於軸方向係配置在第2照明區域IR2與第4照明區域IR4之間。 第4照明區域IR4，於軸方向配置在第3照明區域IR3與第5照明區域IR5之間。第5照明區域IR5，於軸方向配置在第4照明區域IR4與第6照明區域IR6之間。各照明區域IR1~IR6，從光罩M之周方向(X方向)看，係以相鄰梯形照明區域之斜邊部之三角部重疊(overlap)之方式配置。又，第1實施形態中，各照明區域IR1~IR6雖係作成梯形區域，但亦可以是作成長方形區域。 First, a description will be given of a plurality of illumination areas IR1~ illuminated by the illumination optics IL. IR6. As shown in FIG. 3, the plurality of illumination areas IR1 to IR6 are arranged such that the first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5 are arranged on the mask M on the upstream side in the rotation direction via the center plane CL. The second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are disposed on the mask M on the downstream side. Each of the illumination regions IR1 to IR6 has an elongated trapezoidal region extending in the axial direction (Y direction) of the mask M in the parallel direction and the long side. At this time, each of the illumination regions IR1 to IR6 of the trapezoid is formed in a region whose short side is on the side of the center plane CL and whose long side is located outside. The first illumination region IR1, the third illumination region IR3, and the fifth illumination region IR5 are arranged at a predetermined interval in the axial direction. Further, the second illumination region IR2, the fourth illumination region IR4, and the sixth illumination region IR6 are also arranged at a predetermined interval in the axial direction. At this time, the second illumination region IR2 is disposed between the first illumination region IR1 and the third illumination region IR3 in the axial direction. Similarly, the third illumination region IR3 is disposed between the second illumination region IR2 and the fourth illumination region IR4 in the axial direction. The fourth illumination region IR4 is disposed between the third illumination region IR3 and the fifth illumination region IR5 in the axial direction. The fifth illumination region IR5 is disposed between the fourth illumination region IR4 and the sixth illumination region IR6 in the axial direction. Each of the illumination regions IR1 to IR6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal illumination region overlaps as viewed from the circumferential direction (X direction) of the mask M. Further, in the first embodiment, each of the illumination regions IR1 to IR6 is formed as a trapezoidal region, but may be formed as a rectangular region.

又，光罩M，具有形成有光罩圖案之圖案形成區域A3、與 沒有形成光罩圖案之圖案非形成區域A4。圖案非形成區域A4係吸收照明光束EL1之不易反射區域，配置成以框狀圍繞圖案形成區域A3。第1~第6照明區域IR1~IR6係配置成能涵蓋圖案形成區域A3之Y方向全寬。 Further, the mask M has a pattern forming region A3 in which a mask pattern is formed, and The pattern non-formation area A4 of the reticle pattern is not formed. The pattern non-formation region A4 absorbs the non-reflective region of the illumination light beam EL1, and is disposed to surround the pattern formation region A3 in a frame shape. The first to sixth illumination regions IR1 to IR6 are arranged to cover the full width in the Y direction of the pattern formation region A3.

照明光學系IL係對應複數個照明區域IR1~IR6設有複數個(第1實施形態中，例如係6個)。於複數個照明光學系(分割罩明光學系)IL1~IL6，分別射入來自光源裝置13之照明光束EL1。各照明光學系IL1~IL6，將從光源裝置13射入之各照明光束EL1分別導至各照明區域IR1~IR6。也就是說，第1照明光學系IL1將照明光束EL1導至第1照明區域IR1，同樣的，第2~第6照明光學系IL2~IL6將照明光束EL1導至第2~第6照明區域IR2~IR6。複數個照明光學系IL1~IL6，隔著中心面CL在配置第1、第3、第5照明區域IR1、IR3、IR5之側(圖2之左側)，配置第1照明光學系IL1、第3照明光學系IL3及第5照明光學系IL5。第1照明光學系IL1、第3照明光學系IL3及第5照明光學系IL5於Y方向相隔既定間隔配置。又，複數個照明光學系IL1~IL6，隔著中心面CL在配置第2、第4、第6照明區域IR2、IR4、IR6之側(圖2之右側)，配置第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6。第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6於Y方向相隔既定間隔配置。此時，第2照明光學系IL2，係於軸方向配置在第1照明光學系IL1與第3照明光學系IL3之間。同樣的，第3照明光學系IL3、第4照明光學系IL4、第5明光學系IL5，於軸方向配置在第2照明光學系IL2與第4照明光學系IL4之間、第3照明光學系IL3與第5照明光學系IL5之間、第4照明光學系IL4與第6照明光學系IL6之間。此外，第1照明光學系IL1、第3照明光學系IL3及第 5照明光學系IL5與第2照明光學系IL2、第4照明光學系IL4及第6照明光學系IL6，從Y方向看係對稱配置。 The illumination optical system IL is provided in a plurality of illumination regions IR1 to IR6 (for example, six in the first embodiment). The illumination light beams EL1 from the light source device 13 are respectively incident on a plurality of illumination optical systems (splitting cover optical systems) IL1 to IL6. Each of the illumination optical systems IL1 to IL6 leads each illumination light beam EL1 incident from the light source device 13 to each of the illumination regions IR1 to IR6. In other words, the first illumination optical system IL1 leads the illumination light beam EL1 to the first illumination region IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination regions IR2. ~IR6. The plurality of illumination optical systems IL1 to IL6 are disposed on the side of the first, third, and fifth illumination regions IR1, IR3, and IR5 (on the left side in FIG. 2) via the center plane CL, and the first illumination optical system IL1 and the third are disposed. The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of illumination optical systems IL1 to IL6 are disposed on the side of the second, fourth, and sixth illumination regions IR2, IR4, and IR6 (on the right side in FIG. 2) via the center plane CL, and the second illumination optical system IL2 is disposed. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is disposed between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth bright optical system IL5 are disposed between the second illumination optical system IL2 and the fourth illumination optical system IL4 in the axial direction, and the third illumination optical system. Between IL3 and the fifth illumination optical system IL5, between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. In addition, the first illumination optical system IL1, the third illumination optical system IL3, and the first The illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged symmetrically from the Y direction.

其次，參照圖4說明各照明光學系IL1~IL6。又，由於各照 明光學系IL1~IL6皆係同樣構成，因此以第1照明光學系IL1(以下，僅稱為照明光學系IL)為例進行說明。 Next, each of the illumination optical systems IL1 to IL6 will be described with reference to Fig. 4 . Also, due to each photo Since the bright optical systems IL1 to IL6 are configured in the same manner, the first illumination optical system IL1 (hereinafter simply referred to as the illumination optical system IL) will be described as an example.

照明光學系IL，為了以均一照度照明照明區域IR(第1照 明區域IR1)，係適用將來自光源裝置13之照明光束EL1轉換為多數個點光源面狀集合之面光源像的柯勒照明法。又，照明光學系IL係使用偏光分束器PBS之落射照明系。照明光學系IL，從來自光源裝置13之照明光束EL1之射入側起，依序具有照明光學模組ILM、偏光分束器PBS、及1/4波長板41。 Illumination optics IL, in order to illuminate the illumination area IR with uniform illumination (1st photo) In the bright region IR1), a Kohler illumination method in which the illumination light beam EL1 from the light source device 13 is converted into a surface light source image of a plurality of point source planar sets is applied. Further, the illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL has an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 in this order from the incident side of the illumination light beam EL1 from the light source device 13.

如圖4所示，照明光學模組ILM，從照明光束EL1之射入 側起，依序包含準直透鏡51、複眼透鏡52、複數個聚光透鏡53、柱面透鏡54、照明視野光闌55、及複數個中繼透鏡56，係設在第1光軸BX1上。準直透鏡51設在光源裝置13之導光構件32之射出側。準直透鏡51之光軸配置在第1光軸BX上。準直透鏡51照射複眼透鏡52之射入側之全面。複眼透鏡52設在準直透鏡51之射出側。複眼透鏡52之射出側之面之中心配置在第1光軸BX1上。複眼透鏡52，將來自準直透鏡51之照明光束EL1分割成多數個點光源，並使來自各點光源之光重疊而射入後述之聚光透鏡53。 As shown in FIG. 4, the illumination optical module ILM is incident from the illumination beam EL1. The side surface includes a collimating lens 51, a fly-eye lens 52, a plurality of collecting lenses 53, a cylindrical lens 54, an illumination field stop 55, and a plurality of relay lenses 56, which are disposed on the first optical axis BX1. . The collimator lens 51 is provided on the emission side of the light guiding member 32 of the light source device 13. The optical axis of the collimator lens 51 is disposed on the first optical axis BX. The collimator lens 51 illuminates the entirety of the incident side of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the surface on the emission side of the fly-eye lens 52 is disposed on the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into a plurality of point light sources, and superimposes the light from the respective point light sources to enter the condensing lens 53 to be described later.

此時，生成點光源像之複眼透鏡52之射出側之面，藉由從 複眼透鏡52透過照明視野光闌55至後述投影光學系PL之第1凹面鏡72的各種透鏡，配置成與第1凹面鏡72之反射面所在之光瞳面光學上共軛。 聚光透鏡53設在複眼透鏡52之射出側，其光軸配置在第1光軸BX1上。聚光透鏡53將來自複眼透鏡52之各點光源之光(照明光束EL1)透過柱面透鏡54而照射成在照明視野光闌55上重疊。在無柱面透鏡54之場合，到達照明視野光闌55上各點之照明光束EL1之主光線均與第1光軸BX1平行。然而，藉由柱面透鏡54之作用，照射照明視野光闌55之照明光束EL1之各主光線成為在圖4中之Y方向彼此平行(亦與第1光軸BX1平行)的遠心狀態，在XZ面內，成為對應於像高位置而相對第1光軸BX1之傾斜依序不同之非遠心狀態。 At this time, a surface of the exiting side of the fly-eye lens 52 of the point source is generated by The fly-eye lens 52 is transmitted through the illumination field stop 55 to the various lenses of the first concave mirror 72 of the projection optical system PL to be described later, and is disposed so as to be optically conjugate with the pupil plane on which the reflection surface of the first concave mirror 72 is located. The condensing lens 53 is provided on the emission side of the fly-eye lens 52, and its optical axis is disposed on the first optical axis BX1. The condensing lens 53 illuminates the light from the point light sources (the illumination light beam EL1) from the fly-eye lens 52 through the cylindrical lens 54 to be superposed on the illumination field stop 55. In the case of the cylinderless lens 54, the chief ray of the illumination light beam EL1 reaching the respective points on the illumination field stop 55 is parallel to the first optical axis BX1. However, by the action of the cylindrical lens 54, the principal rays of the illumination light beam EL1 that illuminate the illumination field stop 55 become a telecentric state parallel to each other in the Y direction in FIG. 4 (also parallel to the first optical axis BX1), In the XZ plane, a non-telecentric state in which the inclination of the first optical axis BX1 is different from the image height position is sequentially changed.

柱面透鏡54係射入側為平面、射出側為凸面之平凸柱面透鏡，與照明視野光闌55之射入側相鄰設置。柱面透鏡54之光軸配置在第1光軸BX1上，柱面透鏡54之射出側之凸圓筒面之母線設成與圖4中之Y軸平行。藉此，在通過柱面透鏡54後一刻之照明光束EL1之各主光線係在Y方向彼此與第1光軸BX1平行，在XZ面內中往第1光軸BX1上之某點(嚴格來說為與第1光軸BX1正交之延伸於Y方向之線)收斂。 The cylindrical lens 54 is a plano-convex lens having a plane on the incident side and a convex surface on the exit side, and is disposed adjacent to the incident side of the illumination field stop 55. The optical axis of the cylindrical lens 54 is disposed on the first optical axis BX1, and the bus bar of the convex cylindrical surface on the emission side of the cylindrical lens 54 is set to be parallel to the Y-axis in FIG. Thereby, the principal rays of the illumination light beam EL1 immediately after passing through the cylindrical lens 54 are parallel to the first optical axis BX1 in the Y direction, and point to the first optical axis BX1 in the XZ plane (strictly It is said that the line extending in the Y direction orthogonal to the first optical axis BX1 converges.

照明視野光闌55之開口部形成為與照明區域IR相同形狀之梯形(矩形)，照明視野光闌55之開口部中心配置在第1光軸BX1上。此時，照明視野光闌55，藉由從照明視野光闌55至光罩M之圓筒狀之面P1間之中繼透鏡(成像系)56、偏光分束器PBS、1/4波長板41等而被配置在與光罩M上之照明區域IR光學上共軛之面。中繼透鏡56設在照明視野光闌55之射出側。中繼透鏡56之光軸配置在第1光軸BX1上。中繼透鏡56使通過照明視野光闌55之開口部之照明光束EL1透過偏光分束器PBS與1/4波長板41而照射於光罩M之圓筒狀之面P1(照明區域IR)。 The opening of the illumination field stop 55 is formed in a trapezoidal shape (rectangular shape) having the same shape as the illumination area IR, and the center of the opening of the illumination field stop 55 is disposed on the first optical axis BX1. At this time, the illumination field stop 55 is formed by a relay lens (imaging system) 56, a polarization beam splitter PBS, and a quarter-wavelength plate from the illumination field stop 55 to the cylindrical surface P1 of the mask M. 41 or the like is disposed on the surface optically conjugate with the illumination region IR on the mask M. The relay lens 56 is provided on the emission side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the first optical axis BX1. The relay lens 56 causes the illumination light beam EL1 passing through the opening of the illumination field stop 55 to pass through the polarization beam splitter PBS and the quarter-wavelength plate 41 to be irradiated onto the cylindrical surface P1 (illumination area IR) of the mask M.

偏光分束器PBS，配置在照明光學模組ILM與中心面CL之 間。偏光分束器PBS，在波面分割面反射作為S偏光之直線偏光之光束，使作為P偏光之直線偏光之光束透射。此處，射入偏光分束器PBS之照明光束EL1係作為S偏光之直線偏光的光束，射入偏光分束器PBS之來自光罩M之反射光(投影光束EL2)藉由1/4波長板41而成為P偏光之直線偏光之光束。 The polarizing beam splitter PBS is disposed in the illumination optical module ILM and the central surface CL between. The polarization beam splitter PBS reflects a linearly polarized light beam that is S-polarized light on the wavefront division surface, and transmits a linearly polarized light beam that is P-polarized light. Here, the illumination beam EL1 incident on the polarization beam splitter PBS is a linearly polarized beam of S-polarized light, and the reflected light from the mask M (projection beam EL2) incident on the polarization beam splitter PBS is 1/4 wavelength. The plate 41 serves as a beam of polarized light of P-polarized light.

藉此，偏光分束器PBS係反射從照明光學模組ILM射入波 面分割面之照明光束EL1，且透射在光罩M反射且射入波面分割面之投影光束EL2。偏光分束器PBS，雖較佳為反射射入波面分割面之照明光束EL1之全部，但亦可反射射入波面分割面之照明光束EL1之大部分，而使一部分在波面分割面透射或吸收。同樣地，偏光分束器PBS，雖較佳為使射入波面分割面之投影光束EL2之全部透射，但亦可使射入波面分割面之投影光束EL2之大部分透射，而將一部分反射或吸收。 Thereby, the polarizing beam splitter PBS reflects the wave from the illumination optical module ILM. The illumination beam EL1 of the plane is divided and transmitted through the projection beam EL2 reflected by the mask M and incident on the plane of the wavefront. The polarizing beam splitter PBS preferably reflects all of the illumination beam EL1 incident on the wavefront dividing surface, but can also reflect most of the illumination beam EL1 incident on the wavefront dividing surface, and partially transmit or absorb the wavefront splitting surface. . Similarly, the polarization beam splitter PBS preferably transmits all of the projection beam EL2 incident on the wavefront division surface, but may transmit a large portion of the projection beam EL2 incident on the wavefront division surface, and partially reflect or absorb.

1/4波長板41配置在偏光分束器PBS與光罩M之間，將 被偏光分束器PBS反射之照明光束EL1從直線偏光(S偏光)轉換為圓偏光。圓偏光之照明光束EL1照射在光罩M。1/4波長板41將在光罩M反射之圓偏光之投影光束EL2轉換為直線偏光(P偏光)。 The 1⁄4 wavelength plate 41 is disposed between the polarization beam splitter PBS and the mask M, and The illumination light beam EL1 reflected by the polarization beam splitter PBS is converted from linearly polarized light (S-polarized light) to circularly polarized light. The circularly polarized illumination beam EL1 is irradiated on the reticle M. The 1⁄4 wavelength plate 41 converts the circularly polarized projection light beam EL2 reflected by the mask M into linearly polarized light (P-polarized light).

此處，照明光學系IL係以在光罩M之面P1上之照明區域 IR反射之投影光束EL2之主光線不論在Y方向與XZ面內之任一者均成為遠心狀態之方式對光罩M之照明區域IR照明照明光束EL1。參照圖5說明其狀態。 Here, the illumination optical system IL is an illumination area on the surface P1 of the reticle M The chief ray of the IR reflected projection beam EL2 illuminates the illumination beam EL1 with respect to the illumination region IR of the reticle M in such a manner that it is in a telecentric state in either the Y direction or the XZ plane. The state will be described with reference to FIG. 5.

圖5係將照射於光罩M上之照明區域IR之照明光束EL1與 在照明區域IR反射之投影光束EL2之狀態在XZ面(與第1軸AX1垂直之面)內誇張顯示的圖。如圖5所示，上述之照明光學系IL，係以在光罩M之照明區域IR反射之投影光束EL2之主光線成為遠心(平行系)之方式，使照射於光罩M之照明區域IR之照明光束EL1之主光線在XZ面內意圖地成為非遠心狀態，在Y方向成為遠心狀態。 Figure 5 is an illumination beam EL1 that illuminates the illumination area IR on the reticle M with The state of the projection light beam EL2 reflected by the illumination region IR is exaggerated in the XZ plane (the plane perpendicular to the first axis AX1). As shown in FIG. 5, in the illumination optical system IL described above, the chief ray of the projection light beam EL2 reflected by the illumination region IR of the mask M is telecentric (parallel) so that the illumination region IR of the reticle M is irradiated. The chief ray of the illumination light beam EL1 is intended to be a non-telecentric state in the XZ plane and a telecentric state in the Y direction.

照明光束EL1之此種特性，係藉由圖4中所示之柱面透鏡 54被賦予。具體而言，在設定有通過光罩M之面P1上之照明區域IR之周方向中央之點Q1而朝向第1軸AX1之線與光罩M之面P1之半徑Rm之1/2之圓(Rm/2)的交點Q2時，係將柱面透鏡54之凸圓筒透鏡面之曲率設定成通過照明區域IR之照明光束EL1之各主光線在XZ面射向交點Q2。如此，在照明區域IR內反射之投影光束EL2之各主光線，在XZ面內成為與通過第1軸AX1、點Q1、交點Q2之直線平行(遠心)的狀態。當然，由於光罩M之面P1在Y方向之曲率可視為無限大，因此投影光束EL2之各主光線在Y方向亦為遠心狀態。 This characteristic of the illumination beam EL1 is obtained by the cylindrical lens shown in FIG. 54 was given. Specifically, a circle having a point R1 that passes through the center of the circumferential direction of the illumination region IR on the surface P1 of the mask M and a radius Rm of the line P1 facing the first axis AX1 and the surface P1 of the mask M is set. At the intersection Q2 of (Rm/2), the curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set such that the principal ray of the illumination light beam EL1 passing through the illumination region IR is incident on the intersection Q2 on the XZ plane. In this way, each principal ray of the projection light beam EL2 reflected in the illumination region IR is in a state of being parallel (telecentric) with a straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane. Of course, since the curvature of the face P1 of the mask M in the Y direction can be regarded as infinite, the principal rays of the projection beam EL2 are also in the telecentric state in the Y direction.

其次，說明以投影光學系PL投影曝光之複數個投影區域 PA1~PA6。如圖3所示，基板P上之複數個投影區域PA1~PA6係與光罩M上之複數個照明區域IR1~IR6對應配置。也就是說，基板P上之複數個投影區域PA1~PA6係隔著中心面CL於搬送方向上游側之基板P上配置第1投影區域PA1、第3投影區域PA3及第5投影區域PA5，於搬送方向下游側之基板P上配置第2投影區域PA2、第4投影區域PA4及第6投影區域PA6。各投影區域PA1~PA6係具有延伸於基板P之寬度方向(Y方向)之短邊及長邊的細長梯形區域。此時，梯形之各投影區域PA1~PA6係其短邊 位於中心面CL側、其長邊位於外側之區域。第1投影區域PA1、第3投影區域PA3及第5投影區域PA5於寬度方向相隔既定間隔配置。又，第2投影區域PA2、第4投影區域PA4及第6投影區域PA6亦於寬度方向相隔既定間隔配置。此時，第2投影區域PA2，於軸方向係配置在第1投影區域PA1與第3投影區域PA3之間。同樣的，第3投影區域PA3，於軸方向配置在第2投影區域PA2與第4投影區域PA4之間。第4投影區域PA4於軸方向配置在第3投影區域PA3與第5投影區域PA5之間。第5投影區域PA5於軸方向配置在第4投影區域PA4與第6投影區域PA6之間。各投影區域PA1~PA6，與各照明區域IR1~IR6同樣的，從基板P之搬送方向看，係以相鄰之梯形投影區域PA之斜邊部之三角部重疊(overlap)之方式配置。此時，投影區域PA，係在相鄰投影區域PA之重複區域之曝光量與在不重複區域之曝光量成為實質相同的形狀。而第1~第6投影區域PA1~PA6係被配置成能涵蓋曝光至基板P上之曝光區域A7之Y方向全寬。 Next, a description will be given of a plurality of projection regions projected by the projection optical system PL. PA1~PA6. As shown in FIG. 3, a plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to a plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are disposed with the first projection area PA1, the third projection area PA3, and the fifth projection area PA5 on the substrate P on the upstream side in the transport direction via the center plane CL. The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are disposed on the substrate P on the downstream side in the transport direction. Each of the projection areas PA1 to PA6 has an elongated trapezoidal region extending in the width direction (Y direction) of the substrate P and the long side. At this time, each projection area PA1~PA6 of the trapezoid is its short side. It is located on the side of the center plane CL and its long side is located on the outer side. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at a predetermined interval in the width direction. Further, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at a predetermined interval in the width direction. At this time, the second projection area PA2 is disposed between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is disposed between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is disposed between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is disposed between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. Similarly to each of the illumination areas IR1 to IR6, each of the projection areas PA1 to PA6 is disposed such that the triangular portion of the oblique portion of the adjacent trapezoidal projection area PA overlaps as viewed from the direction in which the substrate P is transported. At this time, the projection area PA is substantially the same shape as the exposure amount in the overlap region of the adjacent projection area PA and the exposure amount in the non-overlapping region. The first to sixth projection areas PA1 to PA6 are arranged to cover the full width in the Y direction of the exposure area A7 exposed on the substrate P.

此處，圖2中，於XZ面內觀察時，從光罩M上之奇數個 照明區域IR1(及IR3、IR5)中心點至偶數個照明區域IR2(及IR4、IR6)中心點之周長距離，係設定成從順著基板支承圓筒25之支承面P2之基板P上之奇數個投影區域PA1(及PA3、PA5)之中心點至偶數個投影區域PA2(及PA4、PA6)中心點之周長實質相等。其原因在於，各投影光學系PL1~PL6之投影倍率設為等倍(×1)之故。 Here, in Fig. 2, when viewed in the XZ plane, an odd number from the mask M The circumferential distance from the center point of the illumination area IR1 (and IR3, IR5) to the center point of the even number of illumination areas IR2 (and IR4, IR6) is set to be on the substrate P from the support surface P2 of the substrate supporting cylinder 25. The circumferences of the center points of the odd projection areas PA1 (and PA3, PA5) to the center points of the even projection areas PA2 (and PA4, PA6) are substantially equal. This is because the projection magnification of each of the projection optical systems PL1 to PL6 is equal to (×1).

投影光學系PL，係對應複數個投影區域PA1~PA6設有複 數個(在第1實施形態中例如為六個)。於複數個投影光學系(分割投影光學系)PL1~PL6，從複數個照明區域IR1~IR6反射之複數個投影光束EL2分別 射入。各投影光學系PL1~PL6將被光罩M反射之各投影光束EL2分別導至各投影區域PA1~PA6。也就是說，第1投影光學系PL1將來自第1照明區域IR1之投影光束EL2導至第1投影區域PA1，同樣的，第2~第6投影光學系PL2~PL6將來自第2~第6照明區域IR2~IR6之各投影光束EL2導至第2~第6投影區域PA2~PA6。複數個投影光學系PL1~PL6係隔著中心面CL，於配置第1、第3、第5投影區域PA1、PA3、PA5之側(圖2之左側)配置第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5。第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5於Y方向相隔既定間隔配置。又，複數個投影光學系PL1~PL6係隔著中心面CL，於配置第2、第4、第6投影區域PA2、PA4、PA6之側(圖2之右側)配置第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6。第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6於Y方向相隔既定間隔配置。此時，第2投影光學系PL2，於軸方向配置在第1投影光學系PL1與第3投影光學系PL3之間。同樣的，第3投影光學系PL3、第4投影光學系PL4、第5投影光學系PL5，於軸方向配置在第2投影光學系PL2與第4投影光學系PL4之間、第3投影光學系PL3與第5投影光學系PL5之間、第4投影光學系PL4與第6投影光學系PL6之間。又，第1投影光學系PL1、第3投影光學系PL3及第5投影光學系PL5與第2投影光學系PL2、第4投影光學系PL4及第6投影光學系PL6，從Y方向看係對稱配置。 The projection optical system PL is provided with a plurality of projection areas PA1 to PA6 A few (for example, six in the first embodiment). In a plurality of projection optical systems (split projection optical systems) PL1 to PL6, a plurality of projection light beams EL2 reflected from a plurality of illumination regions IR1 to IR6 are respectively Injection. Each of the projection optical systems PL1 to PL6 guides each of the projection light beams EL2 reflected by the mask M to each of the projection areas PA1 to PA6. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination region IR1 to the first projection region PA1, and similarly, the second to sixth projection optical systems PL2 to PL6 are from the second to the sixth. Each of the projection light beams EL2 of the illumination areas IR2 to IR6 is guided to the second to sixth projection areas PA2 to PA6. The plurality of projection optical systems PL1 to PL6 are arranged on the side of the first, third, and fifth projection areas PA1, PA3, and PA5 (on the left side in FIG. 2) via the center plane CL, and the first projection optical system PL1 and the third are disposed. Projection optical system PL3 and fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. Further, the plurality of projection optical systems PL1 to PL6 are disposed on the side of the second, fourth, and sixth projection regions PA2, PA4, and PA6 (on the right side in FIG. 2) via the center plane CL, and the second projection optical system PL2 is disposed. The fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is disposed between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are disposed between the second projection optical system PL2 and the fourth projection optical system PL4 in the axial direction, and the third projection optical system. Between the PL3 and the fifth projection optical system PL5, between the fourth projection optical system PL4 and the sixth projection optical system PL6. Further, the first projection optical system PL1, the third projection optical system PL3, the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are symmetrical from the Y direction. Configuration.

其次，參照圖4說明各投影光學系PL1~PL6之詳細構成。 又，由於各投影光學系PL1~PL6係同樣構成，因此以第1投影光學系PL1(以下，僅稱為投影光學系PL)為例進行說明。 Next, the detailed configuration of each of the projection optical systems PL1 to PL6 will be described with reference to Fig. 4 . In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter simply referred to as the projection optical system PL) will be described as an example.

投影光學系PL，將在光罩M上之照明區域IR(第1照明區 域IR1)之光罩圖案之像投影於基板P上之投影區域PA。投影光學系PL，從來自光罩M之投影光束EL2之射入側起，依序具有上述1/4波長板41、上述偏光分束器PBS、及投影光學模組PLM。 Projection optical system PL, illumination area IR on the mask M (first illumination area) The image of the mask pattern of the domain IR1) is projected on the projection area PA on the substrate P. The projection optical system PL sequentially includes the quarter-wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM from the incident side of the projection light beam EL2 from the mask M.

1/4波長板41及偏光分束器PBS係與照明光學系IL兼用。 換言之，照明光學系IL及投影光學系PL共有1/4波長板41及偏光分束器PBS。 The 1⁄4 wavelength plate 41 and the polarization beam splitter PBS are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wavelength plate 41 and a polarization beam splitter PBS.

在照明區域IR反射之投影光束EL2被1/4波長板41從圓 偏光轉換為直線偏光(P偏光)後，穿透偏光分束器PBS，成為遠心之成像光束而射入投影光學系PL(投影光學模組PLM)。 The projection beam EL2 reflected in the illumination area IR is taken from the quarter wave plate 41 from the circle After the polarized light is converted into linearly polarized light (P-polarized light), it passes through the polarization beam splitter PBS, becomes a telecentric imaging beam, and enters the projection optical system PL (projection optical module PLM).

投影光學模組PLM與照明光學模組ILM對應設置。也就是 說，第1投影光學系PL1之投影光學模組PLM係將被第1照明光學系IL1之照明光學模組ILM照明之第1照明區域IR1之光罩圖案之像投影於基板P上之第1投影區域PA1。同樣地，第2~第6投影光學系PL2~PL6之投影光學模組PLM係將被第2~第6照明光學系IL2~IL6之照明光學模組ILM照明之第2~第6照明區域IR2~IR6之光罩圖案之像投影於基板P上之第2~第6投影區域PA2~PA6。 The projection optical module PLM is disposed corresponding to the illumination optical module ILM. That is The projection optical module PLM of the first projection optical system PL1 is the first image on which the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 is projected onto the substrate P. Projection area PA1. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 are the second to sixth illumination regions IR2 that are illuminated by the illumination optical modules ILM of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of ~IR6 is projected on the second to sixth projection areas PA2 to PA6 on the substrate P.

如圖4所示，投影光學模組PLM，具備於中間像面P7成像 出照明區域IR之光罩圖案之像的第1光學系61、將第1光學系61所成像之中間像之至少一部分再成像於基板P之投影區域PA的第2光學系62、以及配置在形成中間像之中間像面P7的投影視野光闌63。此外，投影光學模組PLM，具備聚焦修正光學構件64、像偏移用光學構件65、倍率修正用光 學構件66、旋轉(rotation)修正機構67、及偏光調整機構68。 As shown in FIG. 4, the projection optical module PLM has an image formed on the intermediate image plane P7. a first optical system 61 that emits an image of the mask pattern of the illumination region IR, a second optical system 62 that reimages at least a portion of the intermediate image formed by the first optical system 61 on the projection area PA of the substrate P, and A projection field stop 63 of the intermediate image plane P7 of the intermediate image is formed. Further, the projection optical module PLM includes a focus correction optical member 64, an image shifting optical member 65, and magnification correction light. The member 66, the rotation correction mechanism 67, and the polarization adjustment mechanism 68 are taught.

第1光學系61及第2光學系62係例如將戴森(Dyson)系 加以變形之遠心的反射折射光學系。第1光學系61，其光軸(以下，稱第2光軸BX2)相對中心面CL實質正交。第1光學系61具備第1偏向構件70、第1透鏡群71與第1凹面鏡72。第1偏向構件70係具有第1反射面P3與第2反射面P4之三角稜鏡。第1反射面P3係使來自偏光分束器PBS之投影光束EL2反射，使反射之投影光束EL2通過第1透鏡群71而射入第1凹面鏡72的面。第2反射面P4係使在第1凹面鏡72反射之投影光束EL2通過第1透鏡群71並射入，並將射入之投影光束EL2往投影視野光闌63反射的面。第1透鏡群71包含各種透鏡，各種透鏡之光軸配置於第2光軸BX2上。第1凹面鏡72配置於藉由複眼透鏡52生成之多數個點光源會從複眼透鏡52透過照明視野光闌55達到第1凹面鏡72之各種透鏡而成像的光瞳面。 The first optical system 61 and the second optical system 62 are, for example, Dyson. A telecentric optical system that is deformed by telecentricity. In the first optical system 61, the optical axis (hereinafter referred to as the second optical axis BX2) is substantially orthogonal to the center plane CL. The first optical system 61 includes a first deflecting member 70 , a first lens group 71 , and a first concave mirror 72 . The first deflecting member 70 has a triangular ridge of the first reflecting surface P3 and the second reflecting surface P4. The first reflecting surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and causes the reflected projection light beam EL2 to enter the surface of the first concave mirror 72 through the first lens group 71. The second reflecting surface P4 is such that the projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field stop 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are disposed on the second optical axis BX2. The first concave mirror 72 is disposed on the pupil plane in which a plurality of point light sources generated by the fly-eye lens 52 are reflected from the fly-eye lens 52 through the illumination field stop 55 to the various lenses of the first concave mirror 72.

來自偏光分束器PBS之投影光束EL2在第1偏向構件70之 第1反射面P3反射，通過第1透鏡群71之上半部之視野區域而射入第1凹面鏡72。射入第1凹面鏡72之投影光束EL2在第1凹面鏡72反射，通過第1透鏡群71之下半部之視野區域而射入第1偏向構件70之第2反射面P4。射入第2反射面P4之投影光束EL2在第2反射面P4反射，通過聚焦修正光學構件64及像偏移用光學構件65而射入投影視野光闌63。 The projection beam EL2 from the polarization beam splitter PBS is in the first deflection member 70 The first reflecting surface P3 is reflected and enters the first concave mirror 72 through the field of view of the upper half of the first lens group 71. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, and is incident on the second reflection surface P4 of the first deflecting member 70 through the field of view of the lower half of the first lens group 71. The projection light beam EL2 incident on the second reflection surface P4 is reflected by the second reflection surface P4, and is incident on the projection field stop 63 by the focus correction optical member 64 and the image shifting optical member 65.

投影視野光闌63具有規定投影區域PA之形狀的開口。亦 即，投影視野光闌63之開口形狀規定投影區域PA之形狀。因此，在能將圖4所示之照明光學系IL內之照明視野光闌55之開口形狀設為與投影區域 PA之形狀(梯形)形狀相似之時，能省略投影視野光闌63。又，在將照明視野光闌55之開口形狀設為包含投影區域PA之長方形時，必須有用以規定梯形投影區域PA之投影視野光闌63。 The projection field stop 63 has an opening that defines the shape of the projection area PA. also That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA. Therefore, the opening shape of the illumination field stop 55 in the illumination optical system IL shown in FIG. 4 can be set as the projection area. When the shape of the PA (trapezoid) is similar, the projection field stop 63 can be omitted. Further, when the opening shape of the illumination field stop 55 is a rectangle including the projection area PA, it is necessary to use the projection field stop 63 for defining the trapezoidal projection area PA.

第2光學系62係與第1光學系61相同之構成，隔著中間像 面P7與第1光學系61對稱設置。第2光學系62，其光軸(以下，稱第3光軸BX3)相對中心面CL實質正交，與第2光軸BX2成平行。第2光學系62具備第2偏向構件80、第2透鏡群81與第2凹面鏡82。第2偏向構件80具有第3反射面P5與第4反射面P6。第3反射面P5係使來自投影視野光闌63之投影光束EL2反射，使反射之投影光束EL2通過第2透鏡群81而射入第2凹面鏡82的面。第4反射面P6係使在第2凹面鏡82反射之投影光束EL2通過第2透鏡群81而射入，並將射入之投影光束EL2往投影區域PA反射的面。第2透鏡群81包含各種透鏡，各種透鏡之光軸配置於第3光軸BX3上。第2凹面鏡82配置於在第1凹面鏡72成像之多數個點光源像會從第1凹面鏡72透過投影視野光闌63達到第2凹面鏡82之各種透鏡而成像的光瞳面。 The second optical system 62 has the same configuration as the first optical system 61, and the intermediate image is interposed therebetween. The surface P7 is symmetrically disposed with the first optical system 61. In the second optical system 62, the optical axis (hereinafter, referred to as the third optical axis BX3) is substantially orthogonal to the center plane CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflecting member 80 , a second lens group 81 , and a second concave mirror 82 . The second deflecting member 80 has a third reflecting surface P5 and a fourth reflecting surface P6. The third reflecting surface P5 reflects the projection light beam EL2 from the projection field stop 63, and causes the reflected projection light beam EL2 to enter the surface of the second concave mirror 82 through the second lens group 81. The fourth reflecting surface P6 is a surface on which the projection light beam EL2 reflected by the second concave mirror 82 is incident through the second lens group 81 and the incident projection light beam EL2 is reflected toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are disposed on the third optical axis BX3. The second concave mirror 82 is disposed on the pupil plane in which a plurality of point light source images formed by the first concave mirror 72 are imaged from the first concave mirror 72 through the projection field stop 63 to the various lenses of the second concave mirror 82.

來自投影視野光闌63之投影光束EL2在第2偏向構件80 之第3反射面P5反射，通過第2透鏡群81之上半部之視野區域而射入第2凹面鏡82。射入第2凹面鏡82之投影光束EL2在第2凹面鏡82反射，通過第2透鏡群81之下半部之視野區域而射入第2偏向構件80之第4反射面P6。射入第4反射面P6之投影光束EL2在第4反射面P6反射，通過倍率修正用光學構件66而射入投影區域PA。藉此，在照明區域IR之光罩圖案之像係以等倍(×1)投影於投影區域PA。 The projection light beam EL2 from the projection field stop 63 is at the second deflecting member 80 The third reflecting surface P5 reflects and passes through the second concave mirror 82 through the field of view of the upper half of the second lens group 81. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, and is incident on the fourth reflection surface P6 of the second deflecting member 80 through the field of view of the lower half of the second lens group 81. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected by the fourth reflection surface P6, and is incident on the projection area PA by the magnification correction optical member 66. Thereby, the image of the mask pattern in the illumination area IR is projected onto the projection area PA by a factor of (×1).

聚焦修正光學構件64配置在第1偏向構件70與投影視野光 闌63之間。聚焦修正光學構件64係調整投影於基板P上之光罩圖案像之聚焦狀態。聚焦修正光學構件64，例如係將2片楔形稜鏡顛倒(圖4中於X方向顛倒)重疊成整體為透明之平行平板。將此1對稜鏡在不改變彼此對向之面間之間隔的情形下滑向斜面方向，即能改變作為平行平板之厚度。據此，即能微調第1光學系61之實效光路長，對形成於中間像面P7及投影區域PA之光罩圖案像之對焦狀態進行微調。 The focus correcting optical member 64 is disposed on the first deflecting member 70 and the projected field of view light 阑63 between. The focus correction optical member 64 adjusts the focus state of the reticle pattern image projected on the substrate P. The focus correcting optical member 64 is, for example, inverted by two wedge-shaped turns (inverted in the X direction in Fig. 4) into a parallel plate which is entirely transparent. By setting the pair of turns to the direction of the slope without changing the interval between the faces facing each other, the thickness of the parallel plate can be changed. Accordingly, the effective optical path length of the first optical system 61 can be finely adjusted, and the in-focus state of the reticle pattern image formed on the intermediate image surface P7 and the projection area PA can be finely adjusted.

像偏移用光學構件65配置在第1偏向構件70與投影視野光 闌63之間。像偏移用光學構件65，可調整投影於基板P上之光罩圖案之像在像面內微幅移動。像偏移用光學構件65由圖4之在XZ面內可傾斜之透明的平行平板玻璃、與圖4之在YZ面內可傾斜之透明的平行平板玻璃構成。藉由調整該2片平行平板玻璃之各傾斜量，即能使形成於中間像面P7及投影區域PA之光罩圖案之像於X方向及Y方向微幅偏移。 The image deflecting optical member 65 is disposed on the first deflecting member 70 and the projected field of view light 阑63 between. Like the offset optical member 65, the image of the mask pattern projected on the substrate P can be slightly moved in the image plane. The offset optical member 65 is composed of a transparent parallel plate glass which is inclined in the XZ plane of FIG. 4 and a parallel parallel plate glass which can be inclined in the YZ plane of FIG. By adjusting the amount of tilt of the two parallel flat glass sheets, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

倍率修正用光學構件66配置在第2偏向構件70與基板P之 間。倍率修正用光學構件66，係以例如將凹透鏡、凸透鏡、凹透鏡之3片以既定間隔同軸配置，前後之凹透鏡固定、而之間之凸透鏡可於光軸(主光線)方向移動之方式構成。據此，形成於投影區域PA之光罩圖案之像，即能在維持遠心之成像狀態之同時，等向的微幅放大或縮小。又，構成倍率修正用光學構件66之3片透鏡群之光軸，在XZ面內係傾斜而與投影光束EL2之主光線平行。 The magnification correction optical member 66 is disposed on the second deflecting member 70 and the substrate P between. For the magnification correction optical member 66, for example, three pieces of a concave lens, a convex lens, and a concave lens are coaxially arranged at a predetermined interval, and the front and rear concave lenses are fixed, and the convex lens is movable in the optical axis (main ray) direction. According to this, the image of the reticle pattern formed in the projection area PA can be slightly enlarged or reduced in the same direction while maintaining the imaging state of the telecentric. Further, the optical axes of the three lens groups constituting the magnification correcting optical member 66 are inclined in the XZ plane and are parallel to the chief ray of the projection light beam EL2.

旋轉修正機構67，例如係藉由致動器(圖示省略)使第1 偏向構件70繞與第2光軸BX2垂直且與Z軸平行之軸微幅旋轉者。此旋轉 修正機構67藉由使第1偏向構件70旋轉，可使形成於中間像面P7之光罩圖案之像在該中間像面P7內微幅旋轉。 The rotation correcting mechanism 67 is first made of, for example, an actuator (not shown). The deflecting member 70 is slightly rotated about an axis perpendicular to the second optical axis BX2 and parallel to the Z axis. This rotation The correction mechanism 67 can rotate the first deflecting member 70 so that the image of the mask pattern formed on the intermediate image plane P7 is slightly rotated in the intermediate image plane P7.

偏光調整機構68，係例如藉由致動器(圖示省略)使1/4 波長板41繞與板面正交之軸旋轉，以調整偏光方向者。偏光調整機構68藉由使1/4波長板41旋轉，可微調投射於投影區域PA之投影光束EL2之照度。 The polarization adjusting mechanism 68 is 1/4 by, for example, an actuator (not shown) The wave plate 41 is rotated about an axis orthogonal to the plate surface to adjust the polarization direction. The polarization adjusting mechanism 68 can finely adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter-wavelength plate 41.

在以此方式構成之投影光學系PL中，來自光罩M之投影光 束EL2其各主光線從照明區域IR內之光罩M之面P1以遠心狀態射出，通過1/4波長板41及偏光分束器PBS射入第1光學系61。射入第1光學系61之投影光束EL2，於第1光學系61之第1偏向構件70之第1反射面(平面鏡)P3反射，通過第1透鏡群71而在第1凹面鏡72反射。在第1凹面鏡72反射之投影光束EL2再次通過第1透鏡群71而在第1偏向構件70之第2反射面(平面鏡)P4反射，透射過聚焦修正光學構件64及像偏移用光學構件65而射入投影視野光闌63。通過投影視野光闌63之投影光束EL2，於第2光學系62之第2偏向構件80之第3反射面(平面鏡)P5反射，通過第2透鏡群81而在第2凹面鏡82反射。在第2凹面鏡82反射之投影光束EL2再次通過第2透鏡群81而在第2偏向構件80之第4反射面(平面鏡)P6反射，射入倍率修正用光學構件66。從倍率修正用光學構件66射出之投影光束EL2，射入基板P上之投影區域PA，出現在照明區域IR內之光罩圖案之像以等倍(×1)被投影於投影區域PA。 In the projection optical system PL constructed in this manner, the projection light from the mask M Each of the chief rays of the beam EL2 is emitted from the plane P1 of the mask M in the illumination region IR in a telecentric state, and is incident on the first optical system 61 through the quarter-wavelength plate 41 and the polarization beam splitter PBS. The projection light beam EL2 that has entered the first optical system 61 is reflected by the first reflection surface (planar mirror) P3 of the first deflection member 70 of the first optical system 61, and is reflected by the first concave mirror 72 by the first lens group 71. The projection light beam EL2 reflected by the first concave mirror 72 is again reflected by the first lens group 71 on the second reflection surface (planar mirror) P4 of the first deflecting member 70, and transmitted through the focus correction optical member 64 and the image shifting optical member 65. The projection field of view pupil 63 is incident. The projection light beam EL2 of the projection field stop 63 is reflected by the third reflection surface (planar mirror) P5 of the second deflection member 80 of the second optical system 62, and is reflected by the second concave mirror 82 by the second lens group 81. The projection light beam EL2 reflected by the second concave mirror 82 is again reflected by the second lens group 81 on the fourth reflection surface (planar mirror) P6 of the second deflection member 80, and is incident on the magnification correction optical member 66. The projection light beam EL2 emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination region IR is projected onto the projection area PA at a magnification (×1).

<光罩之圖案之投影像面與基板之曝光面之關係> <Relationship between the projection surface of the mask pattern and the exposure surface of the substrate>

其次，參照圖6A及圖6B說明第1實施形態之曝光裝置U3之光罩之圖 案之投影像面與基板之曝光面之關係。圖6A係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。圖6B係概略顯示投影於投影區域內之圖案像之聚焦位置(散焦量)之變化的說明圖。 Next, a photomask of the exposure apparatus U3 of the first embodiment will be described with reference to Figs. 6A and 6B. The relationship between the projection surface of the project and the exposure surface of the substrate. Fig. 6A is an explanatory view showing a relationship between a projection image surface of a pattern of a photomask and an exposure surface of a substrate. Fig. 6B is an explanatory view schematically showing a change in a focus position (defocus amount) of a pattern image projected in a projection area.

曝光裝置U3係藉由投影光學系PL將投影光束EL2成像， 而形成光罩M之圖案之投影像面Sm。投影像面Sm係光罩M之圖案被成像之位置，為作為最佳聚焦之位置。此處，光罩M如前所述以曲率半徑Rm之曲面(在ZX平面為曲線)配置。藉此投影像面Sm亦為曲率半徑Rm之曲面。又，曝光裝置U3中，基板P之表面為曝光面Sp。此處，所謂曝光面Sp係基板P之表面。基板P如上所述保持於圓筒形狀之基板支承圓筒25。 藉此，曝光面Sp成為曲率半徑Rm之曲面(在ZX平面中為曲線)。又，投影像面Sm與曝光面Sp，係與掃描曝光方向正交之方向為曲面的軸。 The exposure device U3 images the projection light beam EL2 by the projection optical system PL. The projection image surface Sm of the pattern of the mask M is formed. The image-forming surface Sm is the position where the pattern of the mask M is imaged, which is the position of the best focus. Here, the mask M is disposed as a curved surface having a curvature radius Rm (curved in the ZX plane) as described above. Thereby, the projection image surface Sm is also a curved surface having a radius of curvature Rm. Further, in the exposure device U3, the surface of the substrate P is the exposure surface Sp. Here, the exposure surface Sp is the surface of the substrate P. The substrate P is held by the cylindrical substrate supporting cylinder 25 as described above. Thereby, the exposure surface Sp becomes a curved surface of a curvature radius Rm (a curve in the ZX plane). Further, the projection image surface Sm and the exposure surface Sp are axes perpendicular to the scanning exposure direction and are curved axes.

因此，如圖6A所示，投影像面Sm與曝光面Sp為相對掃描 曝光方向(基板支承圓筒25之外周面之周方向)彎曲的面。是以，投影像面Sm，在投影區域PA在掃描曝光方向之曝光寬度A之兩端位置與中心位置，於投影光束EL2之主光線方向伴隨最大△Fm之面位置差彎曲，曝光面Sp，在投影區域PA在掃描曝光方向之曝光寬度A之兩端位置與中心位置，於投影光束EL2之主光線方向伴隨最大△Fp之面位置差彎曲。此處，曝光裝置U3如圖6A所示，以相對投影像面Sm、實際曝光時所位於之曝光面Sp(基板P之表面)成為實際曝光面Spa之方式，光罩M之第1軸AX1與基板支承圓筒25之第2軸AX2軸支於曝光裝置本體。 Therefore, as shown in FIG. 6A, the projection image surface Sm and the exposure surface Sp are relatively scanned. A surface that is curved in the exposure direction (the circumferential direction of the outer peripheral surface of the substrate supporting cylinder 25). Therefore, the projection image surface Sm is curved at the end position and the center position of the projection width PA in the scanning exposure direction at the both ends of the exposure width A, and the surface position difference of the projection light beam EL2 in the direction of the chief ray with a maximum ΔFm is curved, and the exposure surface Sp is At both end positions and center positions of the exposure width A of the projection area PA in the scanning exposure direction, the positional difference in the chief ray direction of the projection light beam EL2 with the maximum ΔFp is curved. Here, as shown in FIG. 6A, the exposure device U3 is the first axis AX1 of the mask M in such a manner that the projection surface Sm and the exposure surface Sp (the surface of the substrate P) on which the actual exposure is made become the actual exposure surface Spa. The second axis AX2 of the substrate supporting cylinder 25 is axially supported by the exposure apparatus body.

實際曝光面Spa，在掃描曝光方向中，於與投影像面Sm相 異之兩個位置FC1,FC2相交。此外，曝光裝置U3能藉由調整投影光學系 PL之各光學構件位置、或藉由光罩保持機構11及基板支承機構12之任一方微調光罩M與基板P之間隔、或調整聚焦修正光學構件64，來使相對於投影像面Sm之實際曝光面Spa之法線方向(聚焦調整方向)之位置變化。 The actual exposure surface Spa, in the scanning exposure direction, is in phase with the projection image surface Sm The two locations FC1 and FC2 intersect. In addition, the exposure device U3 can adjust the projection optical system The position of each optical member of the PL or the interval between the mask M and the substrate P by one of the mask holding mechanism 11 and the substrate supporting mechanism 12 or the focus correction optical member 64 is adjusted so as to be opposite to the projection image surface Sm. The position of the normal direction of the exposure surface Spa (focus adjustment direction) changes.

投影像面Sm與實際曝光面Spa係設定為在投影區域PA之 掃描曝光方向之曝光寬度A內在不同之2個位置FC1,FC2之各個相交。是以，在曝光寬度A內之位置FC1與位置FC2之各個，光罩M之圖案像以最佳聚焦狀態投影曝光於基板P之表面。又，在曝光寬度A內之位置FC1與位置FC2之間之區域，成為被投影之圖案像之最佳聚焦面(投影像面Sm)位於較實際曝光面Spa後方之後焦點狀態，在較位置FC1與位置FC2之間更外側之區域，成為被投影之圖案像之最佳聚焦面(投影像面Sm)位於較實際曝光面Spa前方之前焦點狀態。 The projection image surface Sm and the actual exposure surface Spa are set to be in the projection area PA The exposure width A in the scanning exposure direction intersects each of the two different positions FC1, FC2. Therefore, in the position FC1 and the position FC2 in the exposure width A, the pattern image of the mask M is projected and exposed on the surface of the substrate P in an optimum focus state. Further, in the region between the position FC1 and the position FC2 in the exposure width A, the best focus surface (projection image surface Sm) of the projected pattern image is located at a focus state after the rear of the actual exposure surface Spa, at the position FC1. The area outside the position FC2 is the state in which the best focus surface (projection image surface Sm) of the projected pattern image is located before the front of the actual exposure surface Spa.

亦即，在沿著實際曝光面Spa，基板P之表面從曝光寬度A 之一方之端部As往另一方之端部Ae之場合，基板P上之圖案像，在曝光開始時之端部As之位置係伴隨既定之散焦量被曝光，其後，隨著時間經過散焦量減少，在位置FC1以最佳聚焦(散焦量為零)被曝光。在越過在位置FC1之最佳聚焦狀態後，散焦量往反方向增加，在曝光寬度A之中心位置FC3成為最大之散焦量。以曝光寬度A之中心位置FC3作為回折點，其後散焦量減少，在位置FC2再度以最佳聚焦狀態將圖案像曝光於基板P上。 在越過在位置FC2之最佳聚焦狀態後，散焦量再度增加，在另一方之端部Ae，圖案像之曝光結束。如上述般，在位置FC1與位置FC2之間之區域、與在較位置FC1與位置FC2之間更外側之區域，散焦之方向、亦即散焦之符合係相異。 That is, the surface of the substrate P is exposed from the exposure width A along the actual exposure surface Spa When one end portion As is the other end portion Ae, the pattern image on the substrate P is exposed at a position where the end portion As at the start of exposure is accompanied by a predetermined defocus amount, and thereafter, as time passes. The defocus amount is reduced, and is exposed at the position FC1 with the best focus (the amount of defocus is zero). After the optimum focus state at the position FC1 is passed, the defocus amount increases in the opposite direction, and the center position FC3 at the exposure width A becomes the maximum defocus amount. The center position FC3 of the exposure width A is used as a folding point, and thereafter the defocus amount is decreased, and the pattern image is again exposed to the substrate P at the position F2 again in an optimum focus state. After the optimum focus state at the position FC2 is passed, the defocus amount is again increased, and at the other end portion Ae, the exposure of the pattern image is ended. As described above, in the region between the position FC1 and the position FC2 and the region outside the position between the position FC1 and the position FC2, the direction of defocusing, that is, the defocusing is different.

如以上所述，在基板P從投影區域PA之曝光寬度A之端部 As至端部Ae以一定之周速度移動之期間，投影於基板P上之圖案像中之各點，如圖6B所示，在前焦點狀態(位置As)開始曝光，以最佳聚焦狀態(位置FC1)、後焦點狀態(位置FC3)、最佳聚焦狀態(位置FC2)、前焦點狀態(位置Ae)之順序一邊連續變化一邊曝光於基板P上。圖6B之縱軸之聚焦位置(或散焦量)之零係投影像面Sm之位置與實際曝光面Spa之位置之差分(Sm-Spa)為零的最佳聚焦狀態。此外，圖6B之橫軸雖係表示曝光寬度A之直線位置，但亦可為基板支承圓筒25之外周面之周長方向之位置。 As described above, at the end of the exposure width A of the substrate P from the projection area PA When As is moved to a certain peripheral speed, each point in the pattern image projected on the substrate P starts to be exposed in the front focus state (position As) as shown in FIG. 6B, in an optimum focus state ( The order of the position FC1), the back focus state (position FC3), the best focus state (position FC2), and the front focus state (position Ae) is exposed to the substrate P while continuously changing. The focus position (or defocus amount) of the vertical axis of Fig. 6B is the best focus state in which the difference between the position of the zero projection image surface Sm and the position of the actual exposure surface Spa (Sm-Spa) is zero. Further, although the horizontal axis of FIG. 6B indicates the linear position of the exposure width A, it may be a position in the circumferential direction of the outer peripheral surface of the substrate supporting cylinder 25.

在曝光寬度A之端部As,Ae之前焦點狀態(正方向)之散 焦量、在中心位置FC3之後焦點狀態(負方向)之散焦量，可依據投影光學系PL之成像性能(解像力、焦深)、投影區域PA之曝光寬度A、待投影之光罩圖案之最小尺寸、光罩M之面P1(投影像面Sm)之曲率半徑Rm、基板支承圓筒25之外周面(基板P上之曝光面Spa)之曲率半径Rp來決定較佳的範圍。具體之数值例雖於後述，但可如上述般，藉由於涵蓋曝光寬度A之掃描曝光之期間連續改變聚焦狀態，能擴大光罩圖案中之特別是單獨之細線或離散之接觸孔(通孔)等之孤立圖案之外觀上之焦深。 The focus state (positive direction) before the end of the exposure width A, Ae The amount of defocus, the amount of defocus in the focus state (negative direction) after the center position FC3, may depend on the imaging performance (resolution power, depth of focus) of the projection optical system PL, the exposure width A of the projection area PA, and the reticle pattern to be projected. The minimum size, the radius of curvature Rm of the face P1 of the mask M (projection surface Sm), and the radius of curvature Rp of the outer peripheral surface of the substrate support cylinder 25 (the exposure surface Spa on the substrate P) determine a preferred range. The specific numerical example will be described later, but as described above, by continuously changing the focus state during the scanning exposure covering the exposure width A, it is possible to enlarge the particular thin line or discrete contact hole (through hole) in the mask pattern. ) The depth of focus on the appearance of isolated patterns.

又，本實施形態中，藉由將光罩M之面P1與基板P之表面 作成圓筒形狀，能對光罩圖案投影於基板P側之掃描曝光方向之投影像面與被曝光之基板之曝光面賦予圓筒形狀差。因此，曝光装置U3僅透過光罩M與基板支承圓筒25之旋轉運動，即能對應於投影區域PA內之掃描曝光方向之位置使聚焦狀態連續地變化，進而能抑制相對於實質聚焦之像對比 變化。又，本實施形態中，在投影區域PA內，由於將曝光寬度A設定成在掃描曝光方向之兩處成為最佳聚焦，因此能縮小在曝光寬度A內之平均散焦量，且增大曝光寬度A。藉此，在縮小投影光束EL2之照度之場合，或者在增快掃描曝光方向之光罩M或基板P之掃描速度之場合均能確保適當之曝光量，藉此能以高生產効率處理基板。又，由於能相對於曝光寬度縮小平均之散焦量，因此亦能維持品質。 Further, in the present embodiment, the surface P1 of the mask M and the surface of the substrate P are used. The cylindrical shape is formed so that the projection image surface of the reticle pattern projected on the substrate P side in the scanning exposure direction and the exposure surface of the exposed substrate can be given a cylindrical shape. Therefore, the exposure device U3 transmits only the rotational movement of the mask M and the substrate supporting cylinder 25, that is, the focus state can be continuously changed corresponding to the position of the scanning exposure direction in the projection area PA, thereby suppressing the image with respect to the substantial focus. Compared Variety. Further, in the present embodiment, in the projection area PA, since the exposure width A is set to be the best focus in two places in the scanning exposure direction, the average defocus amount in the exposure width A can be reduced, and the exposure can be increased. Width A. Thereby, it is possible to ensure an appropriate exposure amount in the case where the illuminance of the projection light beam EL2 is reduced, or in the case where the scanning speed of the mask M or the substrate P in the scanning exposure direction is increased, whereby the substrate can be processed with high productivity. Moreover, since the average defocus amount can be reduced with respect to the exposure width, the quality can be maintained.

本實施形態中，係對應於曝光寬度A之座標位置(周長位 置)使聚焦位置不同地曝光，其結果，在曝光寬度A中以不同之聚焦狀態投影於基板P上之圖案像之所積算之像，成為基板P之曝光面上所形成之最終之像強度分布。此處雖會說明所積算之像，但為了使說明簡単，首先以點像強度分布說明其概念。概略而言，點像強度分布為其對比與相關關係。在往光軸方向(聚焦變化方向)散焦z後之位置之點像強度分布I(z)為下式。此處，將λ設為照明光束EL1之波長，將NA設為投影光學系PL之基板側之數值孔徑，將I0設為在理想之最佳聚焦位置之強度分布，而為△Dz=(π/2/λ)×NA2×z時，點像強度分布I(z)則成為I(z)=[siN(△Dz)/(△Dz)]2×I0。 In the present embodiment, the focus position is differently exposed in accordance with the coordinate position (perimeter position) of the exposure width A, and as a result, the pattern image projected on the substrate P in different exposure states in the exposure width A is calculated. The image becomes the final image intensity distribution formed on the exposed surface of the substrate P. Although the image of the calculation is described here, in order to simplify the description, the concept is first described by the intensity distribution of the point image. In summary, the intensity of the point image is its contrast and correlation. The point image intensity distribution I(z) at a position after the defocus z in the optical axis direction (focus change direction) is expressed by the following equation. Here, λ is taken as the wavelength of the illumination light beam EL1, NA is set as the numerical aperture on the substrate side of the projection optical system PL, and I 0 is set as the intensity distribution at the ideal optimal focus position, and ΔDz=( When π/2/λ)×NA 2 ×z, the point image intensity distribution I(z) becomes I(z)=[siN(ΔDz)/(ΔDz)] 2 ×I 0 .

若使用如上之點像強度分布I(z)，即可求出曝光寬度A量之積算值(或平均值)，進而，於橫軸取在實際之中心位置(圖6A中之中心位置FC3)之散焦量，能模擬求出各散焦量之強度分布。據此，能藉由以曝光装置U3調整聚焦狀態(投影像面Sm與實際曝光面Spa之位置關係)，將曝光時所得到之圖案像之強度分布(像對比)調整成最佳狀態。 By using the above-described point image intensity distribution I(z), the integrated value (or the average value) of the exposure width A amount can be obtained, and further, the horizontal axis is taken at the actual center position (center position FC3 in Fig. 6A). The amount of defocus can be simulated to determine the intensity distribution of each defocus amount. According to this, the intensity distribution (image contrast) of the pattern image obtained at the time of exposure can be adjusted to an optimum state by adjusting the focus state (the positional relationship between the projection image surface Sm and the actual exposure surface Spa) by the exposure device U3.

又，一般而言投影光學系PL之解像力R與焦深DOF係以 下式表示。 Moreover, in general, the resolution R of the projection optical system PL and the depth of focus DOF are The following formula indicates.

R=k1．λ/NA (0<k1≦1) R=k1. λ/NA (0<k1≦1)

DOF=k2．λ/NA2 (0<k2≦1) DOF=k2. λ/NA 2 (0<k2≦1)

此處，k1,k2雖係會因曝光條件或感光材料(光阻等)、或者曝光後之顯影處理或成膜處理而可能改變之係数，但解像力R之k1因數係大約0.4≦k1≦0.8之範圍，焦深DOF之k2因數能表示為大約k2≒1。 Here, although k1, k2 may be a coefficient that may be changed due to exposure conditions or a photosensitive material (photoresist or the like), or a development process or a film formation process after exposure, the k1 factor of the resolution R is about 0.4 ≦ k1 ≦ 0.8. The range, the k2 factor of the depth of focus DOF can be expressed as approximately k2≒1.

基於此種投影光學系PL之焦深DOF之定義，本實施形態中，較佳為先調整成近似地滿足以下之關係式。 Based on the definition of the depth of focus DOF of the projection optical system PL, in the present embodiment, it is preferable to first adjust to satisfy the following relational expression.

此處，△Rm，△Rp係根據投影像面Sm(光罩M之面P1)之曲率半徑Rm、基板P之表面(實際曝光面Spa)之曲率半徑Rp、以及曝光寬度A，分別以以下之式求出。 Here, ΔRm and ΔRp are respectively based on the curvature radius Rm of the projection image surface Sm (surface P1 of the mask M), the curvature radius Rp of the surface of the substrate P (the actual exposure surface Spa), and the exposure width A, respectively. The formula is obtained.

從此式可明確得知，△Rm與△Rp係各別表示圖6A所示之△Fm、△Fp。又，上述之關係式1較佳為進一步滿足DOF<(△Rm+△Rp)。在本實施形態之曝光裝置U3，雖以滿足上述之關係式1之方式決定曝光寬度A、曲率半徑Rm、Rp，但藉由滿足上述之關係式1，能維持形成 於基板P上之顯示面板用之各種圖案之品質(線寬精度、位置精度、重疊精度等)，同時提高生產性。針對此點，將以第2實施形態詳細說明。 From this formula, it is clear that ΔRm and ΔRp each represent ΔFm and ΔFp shown in Fig. 6A. Further, the above relational expression 1 preferably further satisfies DOF < (ΔRm + ΔRp). In the exposure apparatus U3 of the present embodiment, the exposure width A and the curvature radius Rm and Rp are determined so as to satisfy the above relational expression 1. However, by satisfying the above relational expression 1, the formation can be maintained. The quality of various patterns (line width accuracy, positional accuracy, overlap accuracy, etc.) for the display panel on the substrate P is improved at the same time. This point will be described in detail in the second embodiment.

又，本實施形態中，將在曝光寬度A內之散焦量之變化範 圍、亦即圖6B所示之在端部As,Ae之正方向之散焦量與在曝光寬度A之中心位置FC3之負方向之散焦量之差設為△DA時，從與投影光學系PL之焦深DOF之關係來看，較佳為設定成滿足0.5≦(△DA/DOF)≦3之關係，進而更佳為滿足1≦(△DA/DOF)。藉由將曝光裝置U3設定成滿足此關係，能維持形成於基板P上之顯示面板用之各種圖案之品質(線寬精度、位置精度、重疊精度等)，同時提高生產性。針對此點，將以第2實施形態詳細說明。 Further, in the present embodiment, the variation of the amount of defocus in the exposure width A is The difference between the defocus amount in the positive direction of the end portions As, Ae and the defocus amount in the negative direction of the center position FC3 of the exposure width A is set to ΔDA, as shown in Fig. 6B, and the projection optics In view of the relationship between the depth of field DO of the PL, it is preferable to set the relationship to satisfy 0.5 ≦ (ΔDA/DOF) ≦ 3, and more preferably to satisfy 1 ≦ (ΔDA/DOF). By setting the exposure apparatus U3 to satisfy this relationship, it is possible to maintain the quality (line width accuracy, positional accuracy, overlap accuracy, and the like) of various patterns for the display panel formed on the substrate P, and to improve productivity. This point will be described in detail in the second embodiment.

又，曝光裝置U3如本實施形態之圖6B所示，較佳為設定 成光罩M之圖案之投影像面Sm與基板P之實際曝光面Spa在掃描曝光方向之差以投影區域PA之曝光寬度A之中心位置FC3作為軸變化成線對稱(在圖6B為左右對稱)。 Further, as shown in FIG. 6B of the present embodiment, the exposure device U3 is preferably set. The difference between the projection image surface Sm of the pattern of the mask M and the actual exposure surface Spa of the substrate P in the scanning exposure direction is linearly symmetrical with the center position FC3 of the exposure width A of the projection area PA (in FIG. 6B, the left and right symmetry) ).

又，本實施形態中，如圖6B所示，亦可將在投影區域PA 之曝光寬度A內散焦量為正之端部As至位置FC1之區間與從位置FC2至端部Ae之區間中將正方向之散焦量積分後的值(絕對值)、與散焦量為負之位置FC1至位置FC2之區間中將負方向之散焦量積分後的值(絕對值)比較後，以兩者大致相等之方式設定投影像面Sm與實際曝光面Spa之位置關係。 Moreover, in this embodiment, as shown in FIG. 6B, it is also possible to be in the projection area PA. The value (absolute value) and the defocus amount obtained by integrating the defocus amount in the positive direction from the position from the position FC2 to the end portion Ae in the interval from the end portion As to the position FC1 in the exposure width A In the section from the negative position FC1 to the position FC2, the values (absolute values) obtained by integrating the defocus amount in the negative direction are compared, and the positional relationship between the projection image surface Sm and the actual exposure surface Spa is set so that the two are substantially equal.

本實施形態之曝光裝置U3，係將複數個投影光學模組PLM 於掃描曝光方向以至少兩列配置，於正交於掃描曝光方向之Y方向，使相鄰之投影光學模組PLM之投影區域PA之端部(三角形部分)彼此重疊，以將 光罩M之圖案接合於Y方向來曝光。藉此，可抑制因在Y方向相鄰之兩個投影區域PA間之接合部(重疊區域)之圖案像之對比或曝光量相異而產生之帶狀不均產生。本實施形態中，除此之外，由於係以在實際曝光面Spa(基板P之表面)上之投影區域PA內之掃描曝光方向能形成兩處最佳聚焦位置(位置FC1、位置FC2)之方式設定投影像面Sm與實際曝光面Spa之位置關係，因此能縮小因在掃描曝光中投影像面Sm與實際曝光面Spa之位置關係些許變動之動態散焦而產生之像對比的變化。因此，亦能縮小在相鄰之投影區域PA間之重疊區域產生之像對比之差，能製造出接合部不明顯之高品質之可撓性顯示面板。 The exposure device U3 of the embodiment is a plurality of projection optical modules PLM Arranging in at least two columns in the scanning exposure direction, in the Y direction orthogonal to the scanning exposure direction, the end portions (triangular portions) of the projection regions PA of the adjacent projection optical modules PLM are overlapped with each other to The pattern of the mask M is bonded in the Y direction to be exposed. Thereby, it is possible to suppress the occurrence of band-like unevenness due to the contrast of the pattern images or the exposure amounts of the joint portions (overlapping regions) between the two projection regions PA adjacent in the Y direction. In the present embodiment, in addition to this, since the scanning exposure direction in the projection area PA on the actual exposure surface Spa (the surface of the substrate P) can form two optimum focus positions (position FC1, position FC2) Since the positional relationship between the projection image surface Sm and the actual exposure surface Spa is set, it is possible to reduce the change in the image contrast caused by the dynamic defocus which is slightly changed in the positional relationship between the projection image surface Sm and the actual exposure surface Spa in the scanning exposure. Therefore, it is also possible to reduce the difference in image contrast caused by the overlapping area between the adjacent projection areas PA, and it is possible to manufacture a high-quality flexible display panel in which the joint portion is not conspicuous.

如本實施形態所示，在將複數個投影光學模組PLM之各投 影區域PA排列於與掃描曝光方向(X方向)正交之Y方向時，於各投影區域PA之掃描曝光方向之寬度中將在基板P上之照度(曝光用光之強度)積算後的積算值，較佳為在與掃描曝光方向正交之Y方向之任一位置均大致一定。此外，在於Y方向相鄰之兩個投影區域PA之端部局部重疊之部分(三角形之重疊區域)，亦設定為在一方三角形區域之積算值與在另一方三角形區域之積算值的合計與在不重疊之區域之積算值相同。藉此，能抑制在與掃描曝光方向正交之方向中曝光量變化。 As shown in this embodiment, each of the plurality of projection optical modules PLM is cast When the shadow area PA is arranged in the Y direction orthogonal to the scanning exposure direction (X direction), the illuminance (intensity of the exposure light) on the substrate P is integrated in the width of the scanning exposure direction of each projection area PA. The value is preferably substantially constant at any position in the Y direction orthogonal to the scanning exposure direction. Further, the portion (the overlap region of the triangle) in which the end portions of the two projection regions PA adjacent in the Y direction partially overlap is also set as the sum of the integrated value of one triangular region and the integrated value of the other triangular region. The integrated values of the areas that do not overlap are the same. Thereby, it is possible to suppress the change in the amount of exposure in the direction orthogonal to the scanning exposure direction.

又，曝光裝置U3，藉由將投影像面Sm及曝光面Sp(實際曝 光面Spa)作成圓筒面，而可如本實施形態所示，即使於掃描曝光方向配置複數個投影光學模組PLM(配置奇數個與偶數個之兩列)，由於在各個投影光學模組PLM中投影像面Sm及曝光面Sp(實際曝光面Spa)之關係均相同，因此能將該等之關係一起調整。如通常之多透鏡方式之投影曝光裝置般，在 投影像面及曝光面為平面之場合，例如在奇數個投影光學模組之投影區域中若為了擴大焦深而使曝光面(平面基板之表面)相對投影像面傾斜，則在偶數個投影光學模組之投影區域則會產生難以容許之較大散焦。相對於此，如本實施形態所示，藉由將投影像面Sm及曝光面Sp(實際曝光面Spa)作成圓筒面，於掃描曝光方向排列之兩列投影光學模組PLM之在各投影區域PA之聚焦調整，能透過圓筒狀之光罩M之旋轉中心之第1軸AX1與基板支承圓筒25之旋轉中心之第1軸AX1在Z方向之間隔、或各個投影光學模組PLM內之倍率修正用光學構件66之調整來簡單地實現。藉此，能以簡單之裝置構成抑制相對於散焦之像對比變化。由於能抑制像對比變化同時增大掃描曝光區域之曝光寬度，因此生產效率亦提升。 Moreover, the exposure device U3, by projecting the image surface Sm and the exposure surface Sp (actual exposure) The smooth surface is made into a cylindrical surface, and as shown in the embodiment, even if a plurality of projection optical modules PLM (two or even columns are arranged) are arranged in the scanning exposure direction, since each of the projection optical modules The relationship between the PLM projection image surface Sm and the exposure surface Sp (the actual exposure surface Spa) is the same, so that the relationship can be adjusted together. As in the usual multi-lens projection exposure apparatus, When the projection image surface and the exposure surface are flat, for example, in the projection area of an odd number of projection optical modules, if the exposure surface (the surface of the planar substrate) is inclined with respect to the projection image surface in order to enlarge the depth of focus, then an even number of projection optics are used. The projected area of the module creates a large defocus that is difficult to tolerate. On the other hand, as shown in the present embodiment, the projection image surface Sm and the exposure surface Sp (the actual exposure surface Spa) are formed into a cylindrical surface, and the projections of the two columns of projection optical modules PLM arranged in the scanning exposure direction are projected. The focus adjustment of the area PA is such that the first axis AX1 of the center of rotation of the cylindrical mask M and the first axis AX1 of the center of rotation of the substrate supporting cylinder 25 are spaced apart in the Z direction, or the respective projection optical modules PLM The adjustment of the magnification correction optical member 66 is simply realized. Thereby, it is possible to suppress the contrast change with respect to the defocus image with a simple device configuration. Since the contrast change can be suppressed while increasing the exposure width of the scanning exposure region, the production efficiency is also improved.

[第2實施形態] [Second Embodiment]

其次，參照圖7說明第2實施形態之曝光裝置U3a。此外，為了避免重複之記載，係針對與第1實施形態相異之部分加以說明，對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。圖7係顯示第2實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第1實施形態之曝光裝置U3雖係以圓筒狀之基板支承圓筒25保持通過投影區域之基板P之構成，但第2實施形態之曝光裝置U3a係將基板P保持於能將基板P支承成平面狀並能移動的基板支承機構12a之構成。 Next, an exposure apparatus U3a according to the second embodiment will be described with reference to Fig. 7 . In the following description, the same components as those in the first embodiment are denoted by the same reference numerals as those in the first embodiment, and the same components as those in the first embodiment are denoted by the same reference numerals. Fig. 7 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a second embodiment. In the exposure apparatus U3 of the first embodiment, the substrate P is held by the substrate support cylinder 25 in the cylindrical region. However, the exposure apparatus U3a of the second embodiment holds the substrate P and can support the substrate P. The substrate supporting mechanism 12a is formed in a planar shape and movable.

第2實施形態之曝光裝置U3a中，基板支承機構12a具備平 面狀保持基板P之基板載台102與將基板載台102在與中心面CL正交之面內沿著X方向掃描移動之移動裝置(圖示略)。因此，基板P除了可係可撓性之薄片(PET、PEN等樹脂模、極薄之彎曲剝離面、薄金屬製之箔等)以外， 亦可係幾乎不彎曲之葉片之玻璃基板。 In the exposure apparatus U3a of the second embodiment, the substrate supporting mechanism 12a is provided with a flat The substrate stage 102 that planarly holds the substrate P and the moving device (not shown) that scans the substrate stage 102 in the X direction in a plane orthogonal to the center plane CL. Therefore, the substrate P can be made of a flexible sheet (a resin mold such as PET or PEN, an extremely thin curved peeling surface, a foil made of a thin metal, or the like). It can also be a glass substrate of a blade that is hardly curved.

圖7之基板P之支承面P2由於係實質上與XY面平行之平 面(曲率半徑∞)，因此從光罩M反射而通過投影光學模組PLM並投射於基板P之投影光束EL2與XY面成垂直。 The support surface P2 of the substrate P of FIG. 7 is substantially parallel to the XY plane. Since the surface (curvature radius ∞) is formed, the projection light beam EL2 reflected from the mask M and projected through the projection optical module PLM and projected onto the substrate P is perpendicular to the XY plane.

又，第2實施形態中亦與先前之圖2同樣地，在XZ面內觀 察時，從圓筒狀之光罩M上之照明區域IR1(及IR3、IR5)之中心點至照明區域IR2(及IR4、IR6)之中心點的周長與順著支承面P2之基板P上之投影區域PA1(及PA3、PA5)之中心點至第2投影區域PA2(及PA4、PA6)之中心點的在X方向之直線距離，係設定成實質相等。 Further, in the second embodiment, as in the previous FIG. 2, the XZ in-plane view is also performed. When viewed, the circumference from the center point of the illumination area IR1 (and IR3, IR5) on the cylindrical mask M to the illumination area IR2 (and IR4, IR6) and the substrate P along the support surface P2 The linear distance in the X direction from the center point of the upper projection area PA1 (and PA3, PA5) to the center point of the second projection area PA2 (and PA4, PA6) is set to be substantially equal.

圖7中之曝光裝置U3a亦同樣地，下位控制裝置16控制基 板支承機構12之移動裝置(掃描曝光用之線性馬達或微動用之致動器等)，與光罩保持圓筒21之旋轉同步地驅動基板載台102。 Similarly, the exposure device U3a in FIG. 7 also controls the base of the lower control device 16. The moving device (the linear motor for scanning exposure or the actuator for fine movement, etc.) of the plate supporting mechanism 12 drives the substrate stage 102 in synchronization with the rotation of the mask holding cylinder 21.

其次，參照圖8說明第2實施形態之曝光裝置U3a中之光罩 之圖案之投影像面與基板之曝光面的關係。圖8係顯示光罩之圖案之投影像面與基板之曝光面之關係的說明圖。 Next, a mask in the exposure apparatus U3a of the second embodiment will be described with reference to FIG. The relationship between the projected image surface of the pattern and the exposed surface of the substrate. Fig. 8 is an explanatory view showing the relationship between the projection image surface of the pattern of the photomask and the exposure surface of the substrate.

曝光裝置U3a，係藉由投影光學系PL將投影光束EL2成像 以形成光罩M之圖案的投影像面Sm1。投影像面Sm1係將光罩M之圓筒狀之光罩圖案面以最佳聚焦狀態成像的面，為一圓筒面。此處，光罩M上之照明區域IR，如上述般係曲率半徑Rm1之曲面(在XZ面內為圓弧)之一部分，因此投影像面Sm1亦為曲率半徑Rm1之曲面(在XZ面內為圓弧)之一部分。又，光罩圖案之像所投影之基板P之平面狀表面為曝光面Sp1(曲率半徑∞)。因此，如圖8所示，奇數個投影區域PA之投影像面Sm1(左側) 與偶數個投影區域PA之投影像面Sm1(右側)均在掃描曝光方向(X方向)彎曲成圓筒狀，與先前之圖6A所示者同樣地，在投影區域PA在掃描曝光方向之曝光寬度A內，具有在兩端之聚焦位置與在曝光寬度A之中心之聚焦位置之差分即面位置差(聚焦變化寬度)△Fm。此處，在掃描曝光時，基板P之表面配置於實際曝光面Spa1。曝光面Sp1及實際曝光面Spa1由於係平面，因此在投影區域PA在掃描曝光方向之曝光寬度A內，Z方向之面位置之變化量為0。實際曝光面Spa1，設定為在投影像面Sm1上於掃描曝光方向分離之相異之兩個位置FC1,FC2相交。亦即，曝光裝置U3能藉由調整投影光學系PL內之倍率修正用光學構件66等或使光罩保持機構11(第1軸AX1)及基板支承機構102之任一方微動於Z方向來將投影像面Sm1與實際曝光面Spa1之相對位置關係設定為既定之狀態。 The exposure device U3a images the projection light beam EL2 by the projection optical system PL A projection image surface Sm1 that forms a pattern of the mask M. The projection image surface Sm1 is a surface on which the cylindrical mask pattern surface of the mask M is imaged in an optimum focus state. Here, the illumination area IR on the mask M is a part of the curved surface of the curvature radius Rm1 (the arc in the XZ plane), and therefore the projection image surface Sm1 is also the curved surface of the curvature radius Rm1 (in the XZ plane). It is part of an arc. Further, the planar surface of the substrate P projected by the image of the mask pattern is the exposure surface Sp1 (curvature radius ∞). Therefore, as shown in FIG. 8, the projection image surface Sm1 (left side) of the odd projection areas PA The projection image surface Sm1 (right side) with an even number of projection areas PA is curved in a cylindrical shape in the scanning exposure direction (X direction), and is exposed in the scanning exposure direction in the projection area PA as in the previous FIG. 6A. In the width A, there is a difference in surface position (focus variation width) ΔFm which is a difference between the focus position at both ends and the focus position at the center of the exposure width A. Here, at the time of scanning exposure, the surface of the substrate P is disposed on the actual exposure surface Spa1. Since the exposure surface Sp1 and the actual exposure surface Spa1 are plane planes, the amount of change in the surface position in the Z direction is 0 in the exposure width A of the projection area PA in the scanning exposure direction. The actual exposure surface Spa1 is set to intersect at two different positions FC1 and FC2 which are separated in the scanning exposure direction on the projection image surface Sm1. In other words, the exposure device U3 can be adjusted by adjusting the magnification correction optical member 66 or the like in the projection optical system PL or by napping either the mask holding mechanism 11 (the first axis AX1) and the substrate supporting mechanism 102 in the Z direction. The relative positional relationship between the projected image plane Sm1 and the actual exposure surface Spa1 is set to a predetermined state.

兩個位置FC1,FC2之各個，係在其位置將投影像面Sm1內之光罩圖案像以最佳聚焦狀態曝光的位置。 Each of the two positions FC1, FC2 is at a position where the reticle pattern image in the projection image surface Sm1 is exposed in the best focus state.

藉此，本實施形態中亦同樣地，藉由圓筒狀之光罩M之旋轉運動，即能進行在掃描曝光方向之曝光寬度A內使聚焦狀態在既定範圍內連續地變化的掃描曝光，進而能抑制相對於實質聚焦之像對比變化。如上述，即使曝光面Sp1(實際曝光面Spa1)為平面，亦能藉由將投影像面Sm1作成於掃描曝光方向彎曲之圓筒面狀，而可在不使基板P傾斜之情形下得到在外觀上擴大曝光於基板P上之光罩圖案像之焦深的效果，且能抑制像對比之變化。此種作用效果，在將來自通常之平面光罩之圖案像投影曝光於被支承成圓筒面狀之基板之表面(曝光面)的情形亦同樣能取得。 According to the same embodiment, in the same manner, by the rotational movement of the cylindrical mask M, it is possible to perform scanning exposure in which the focus state is continuously changed within a predetermined range in the exposure width A in the scanning exposure direction. Further, it is possible to suppress the contrast change of the image with respect to the substantial focus. As described above, even if the exposure surface Sp1 (the actual exposure surface Spa1) is a flat surface, the projection image surface Sm1 can be formed into a cylindrical surface curved in the scanning exposure direction, and can be obtained without tilting the substrate P. The effect of exposing the depth of focus of the reticle pattern image on the substrate P is enlarged in appearance, and variation in image contrast can be suppressed. Such an effect can also be obtained by projecting a pattern image from a normal planar mask onto a surface (exposure surface) of a substrate supported by a cylindrical surface.

此外，本實施形態之場合，圖8所示之面位置差(聚焦變化 寬度)△Fm由於係與先前之式2之△Rm相同，因此能以 求出。因此，以此式2為基礎，試著進行圖7之曝光裝置U3a中之投影狀態或成像特性等各種模擬後，可得到如圖9~圖17之結果。 Further, in the case of the present embodiment, the surface position difference (focus change width) ΔFm shown in Fig. 8 is the same as the ΔRm of the previous formula 2, so that Find out. Therefore, based on the equation 2, various simulations such as the projection state or the imaging characteristics in the exposure apparatus U3a of Fig. 7 are tried, and the results as shown in Figs. 9 to 17 can be obtained.

此外，在該模擬時，若將圓筒狀之光罩M之面P1(投影像面 Sm1)之半徑Rm設為250mm(直徑ψ 500mm)，將曝光用之照明光束EL1之波長λ設為i線(365nm)，將投影光學系PL設為數值孔徑NA為0.0875之等倍的理想投影系，曝光面Sp1(實際曝光面Spa1)為曲率半徑∞之平面，取決於製程之焦深DOF之k2因數設為1.0，此種投影光學系PL之焦深DOF，依據λ/NA2，為寬度約48μm(相對最佳聚焦面為大致±24μm之範圍)。此外，以下之模擬中，為了說明方便，亦有將焦深DOF設為寬度40μm(相對最佳聚焦面為大致±20μm之範圍)的場合。 Further, in the simulation, when the radius Rm of the surface P1 (projection surface Sm1) of the cylindrical mask M is set to 250 mm (diameter ψ 500 mm), the wavelength λ of the illumination light beam EL1 for exposure is set to i. Line (365 nm), the projection optical system PL is an ideal projection system with a numerical aperture NA of 0.0875, and the exposure surface Sp1 (actual exposure surface Spa1) is a plane of curvature radius ,, depending on the focal depth DOF of the process. The factor is set to 1.0, and the depth of field DOF of such a projection optical system PL is about 48 μm in width (relatively the best focus plane is approximately ±24 μm in terms of λ/NA 2 ). Further, in the following simulation, for the convenience of explanation, the depth of focus DOF may be set to a width of 40 μm (a range in which the relatively optimal focus surface is approximately ±20 μm).

進而，圖9係顯示此種投影光學系PL在曝光寬度A內之散 焦特性Cm，橫軸表示以曝光寬度A之中心位置為原點之X方向之座標，縱軸表示以最佳聚焦位置為原點(零點)之投影像面Sm1之散焦量。此圖9之圖表，亦係在先前式2中將曝光寬度A設為20mm、將使該寬度A之座標位置在-10mm至+10mm間變化而取得之面位置差△Rm描繪後的圖。如圖9之圖表所示，光罩M之面P1(投影像面Sm1)在掃描曝光方向因圓筒狀彎曲而使在曝光寬度A內之散焦特性Cm圓弧狀變化。 Furthermore, FIG. 9 shows the dispersion of such a projection optical system PL within the exposure width A. The focal length Cm, the horizontal axis represents the coordinate in the X direction with the center position of the exposure width A as the origin, and the vertical axis represents the defocus amount of the projection image surface Sm1 with the optimum focus position as the origin (zero point). The graph of FIG. 9 is also a drawing in which the exposure width A is set to 20 mm in the prior art 2, and the surface position difference ΔRm obtained by changing the coordinate position of the width A between -10 mm and +10 mm is drawn. As shown in the graph of FIG. 9, the surface P1 (projection surface Sm1) of the mask M is curved in the scanning exposure direction, and the defocus characteristic Cm in the exposure width A changes in an arc shape.

圖10係在圖9所示之散焦特性Cm中模擬其點像強度相對 於焦深DOF寬度之變化會如何變化的圖表，橫軸表示可能因基板P之表面 或光罩圖案面之面精度誤差、投影光學系PL之像面方向之像差而產生之聚焦方向之模糊量(基板P之表面相對於散焦特性Cm在聚焦方向之偏移)，縱軸表示點像強度之值。圖10中，係在圖9中之散焦特性Cm之前提下將焦深DOF為0×DOF之場合所算出之點像強度分布中在曝光寬度A中心(原點)之點像強度設為1.0而標準化。圖11係模擬在曝光寬度A內圓弧狀變化之圖9之散焦特性Cm之變化量與強度差(強度變化量)之關係一例的圖表。圖12係模擬裝置所設定之最佳聚焦時與將在裝置產生之散焦設為24μm時之在曝光寬度A內圓弧狀變化之散焦特性Cm與線與空間(L/S、L&S)圖案之對比變化之關係一例的圖表。圖13同樣係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與L/S圖案之對比率變化之關係另一例的圖表。圖14係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與L/S圖案之CD(臨界尺寸)值及截剪位準(slice level)之關係一例的圖表。圖15係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線(ISO圖案)之對比變化之關係一例的圖表。圖16係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線之對比率變化之關係另一例的圖表。圖17係模擬在曝光寬度A內圓弧狀變化之散焦特性Cm與孤立線之CD值及截剪位準之關係一例的圖表。 Figure 10 is a simulation of the intensity of the point image in the defocus characteristic Cm shown in Figure 9. A graph showing how the change in DOF width in the depth of focus changes, and the horizontal axis indicates the surface of the substrate P may be Or the blur amount of the focus direction caused by the surface precision error of the mask pattern surface and the aberration of the image plane direction of the projection optical system PL (the surface of the substrate P is offset from the defocus characteristic Cm in the focus direction), and the vertical axis Indicates the value of the intensity of the point image. In Fig. 10, the point image intensity at the center of the exposure width A (origin) is set in the point image intensity distribution calculated when the depth of focus DOF is 0 × DOF before the defocus characteristic Cm in Fig. 9 is set. Standardized by 1.0. Fig. 11 is a graph showing an example of the relationship between the amount of change in the defocus characteristic Cm and the intensity difference (intensity change amount) of Fig. 9 in which the arc-shaped change in the exposure width A is simulated. Fig. 12 is a defocusing characteristic Cm and line and space (L/S, L&S) which are arc-shaped in the exposure width A when the optimum focus is set by the simulation device and when the defocus generated by the device is set to 24 μm. A chart of an example of the relationship between the changes in the pattern. Fig. 13 is also a graph showing another example of the relationship between the defocus characteristic Cm of the arc-shaped change in the exposure width A and the change in the contrast ratio of the L/S pattern. Fig. 14 is a graph showing an example of the relationship between the defocus characteristic Cm of the arc-shaped change in the exposure width A and the CD (critical dimension) value and the slice level of the L/S pattern. Fig. 15 is a graph showing an example of the relationship between the defocus characteristic Cm in which the arc-shaped change in the exposure width A and the isolated line (ISO pattern) are compared. Fig. 16 is a graph showing another example of the relationship between the defocus characteristic Cm in which the arc-shaped change in the exposure width A and the contrast ratio of the isolated line are changed. Fig. 17 is a graph showing an example of the relationship between the defocus characteristic Cm of the arc-shaped change in the exposure width A and the CD value and the clipping level of the isolated line.

首先，在上述條件下，將相對於在曝光寬度A內圓弧狀變 化之散焦特性Cm以焦深DOF單位區分時所產生之散焦量之點像強度分布I(z)如圖10所示求出。點像強度分布為以先前說明之式I(z)=[sin(△Dz)/(△Dz)]2×I0、△Dz=(π/2/λ)×NA2×z來求出。 First, under the above conditions, the point image intensity distribution I(z) of the defocus amount generated when the defocus characteristic Cm which is circularly changed in the exposure width A is distinguished by the depth of focus DOF unit is as shown in FIG. Show it. The point image intensity distribution is obtained by the above-described formula I(z)=[sin(ΔDz)/(ΔDz)] 2 ×I 0 , ΔDz=(π/2/λ)×NA 2 ×z .

其次，針對假設將散焦量之平均以成為最佳聚焦之方式調整 基板時之點像強度分布在曝光寬度A內圓弧狀變化之散焦寬度設為各種值例如0,1×DOF,2×DOF,3×DOF,4×DOF之情形進行計算。又，針對在曝光寬度A內圓弧狀變化之散焦寬度為各種之情形，將該散焦量及其狹縫寬度作為基準算出從其位置使之散焦之場合的點像強度分布。以此方式，彙整在所算出之曝光寬度A唯一地決定之各曝光寬度A內中圓弧狀變化之散焦寬度時之點像強度分布與散焦的關係。具體而言，係針對將曝光裝置U3a中在曝光寬度內圓弧狀變化之散焦寬度設為0,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF之情形之各個，算出點像強度分布與曝光時所假定之聚焦誤差、散焦之關係。 Secondly, adjust to the assumption that the average defocus amount is the best focus. The defocus width in which the point image intensity distribution in the substrate is circularly changed within the exposure width A is calculated as various values such as 0, 1 × DOF, 2 × DOF, 3 × DOF, and 4 × DOF. In addition, in the case where the defocus width which changes in an arc shape in the exposure width A is various, the defocus amount and the slit width thereof are used as a reference to calculate a point image intensity distribution when the position is defocused. In this way, the relationship between the point image intensity distribution and the defocus when the defocus width of the arc-shaped change in each of the exposure widths A uniquely determined by the calculated exposure width A is collected. Specifically, it is set to 0, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF for the defocus width of the exposure device U3a that changes in an arc shape within the exposure width. In the case of 3.5×DOF and 4×DOF, the relationship between the intensity distribution of the point image and the focus error and defocus assumed at the time of exposure is calculated.

其次，針對假設將散焦量之平均以成為最佳聚焦之方式調整 基板時之點像強度分布在曝光寬度A內圓弧狀變化之散焦特性Cm設為各種值例如0,1×DOF,2×DOF,3×DOF,4×DOF之情形進行計算。又，針對在曝光寬度A內圓弧狀變化之散焦特性Cm為各種之情形，將該散焦量及其狹縫寬度作為基準算出從其位置使之散焦之場合的點像強度分布。以此方式，彙整在所算出之曝光寬度A唯一地決定之各散焦特性Cm時之點像強度分布與散焦的關係。具體而言，係針對作為曝光裝置U3a在模擬上設定之如圖9所示之散焦特性Cm設為0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF之情形之各個，算出點像強度分布與曝光時所假定之聚焦誤差(從所設定之投影像面Sm1與基板P之表面之應設定位置關係起的偏移)之關係。此相當於圖10之圖表。 Secondly, adjust to the assumption that the average defocus amount is the best focus. The defocus characteristic Cm in which the point image intensity distribution in the substrate width changes in the exposure width A is set to various values such as 0, 1 × DOF, 2 × DOF, 3 × DOF, and 4 × DOF. In addition, in the case where the defocus characteristic Cm which changes in an arc shape in the exposure width A is various, the defocus amount and the slit width thereof are used as a reference to calculate a point image intensity distribution when the position is defocused. In this way, the relationship between the point image intensity distribution and the defocus at the respective defocus characteristics Cm uniquely determined by the calculated exposure width A is collected. Specifically, the defocus characteristic Cm as shown in FIG. 9 set as an exposure device U3a is set to 0×DOF, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF. For each of the cases of 3×DOF, 3.5×DOF, and 4×DOF, the point image intensity distribution and the focus error assumed during exposure are calculated (from the set positional relationship between the set projection image surface Sm1 and the surface of the substrate P) The relationship of the offset). This is equivalent to the chart of Figure 10.

圖10中，係將橫軸設為散焦量[μm]，將縱軸設為標準化後 之點像強度值。此外，曝光裝置U3a由於係進行圓筒狀之光罩圖案面亦即 投影像面Sm之旋轉運動來將投影光束EL2投射於基板P上，因此在曝光時所假定之聚焦誤差係進行二次地變化。因此，在散焦之正側與負側其點像之狀態些許不同。本實施形態中，係將散焦為+40μm之位置之點強度與-40μm之位置之點強度為對稱之強度的位置設為最佳聚焦。如圖10之圖表所示，隨著因旋轉而導致之振幅越大，亦即隨著在曝光區域內散焦寬度沿著如圖9之散焦特性Cm變大，最佳聚焦時之點像強度即變低，散焦時之點像強度之變化亦變小。 In Fig. 10, the horizontal axis is set to the defocus amount [μm], and the vertical axis is set as the normalization. The point is like the intensity value. Further, since the exposure device U3a performs a cylindrical mask pattern surface, The rotation of the image plane Sm is projected to project the projection beam EL2 onto the substrate P, so that the focus error assumed at the time of exposure is changed twice. Therefore, the state of the point image on the positive side and the negative side of the defocus is slightly different. In the present embodiment, the position at which the dot intensity at the position of defocusing of +40 μm and the intensity of the point at the position of -40 μm are symmetrical are set as the optimum focus. As shown in the graph of Fig. 10, as the amplitude due to the rotation is larger, that is, as the defocus width in the exposure region increases along the defocus characteristic Cm as shown in Fig. 9, the point image at the time of optimal focus The intensity is lowered, and the change in the intensity of the point image at the time of defocusing is also small.

其次，算出改變在曝光寬度A內圓弧狀變化之散焦特性Cm 之各場合之點像強度變化、亦即點像強度之最大值與最小值之差，進而算出在曝光寬度A內散焦特性Cm相異0.5DOF之兩個點之點像強度變化的差分量。將其算出結果顯示於圖11。圖11之縱軸表示兩個點像強度變化之差分量，橫軸表示每隔0.5DOF使散焦特性Cm變化時求出差分量之對象。亦即，圖11之橫軸中，例如最左邊之點像強度差(約0.02)，係在使散焦特性Cm變化0×DOF時與變化0.5×DOF時的差分。根據此圖11之模擬結果，點像強度變化之差，在從散焦特性Cm已變化0.5×DOF量的狀態遷移至已變化1×DOF量的狀態時、與從散焦特性Cm已變化2.5×DOF量的狀態遷移至已變化3×DOF量的狀態時，其整體差較大。亦即，0.5×DOF至3×DOF之範圍，點像強度變化相較於散焦量之變化較和緩的效果高。因此，依據散焦特性Cm的散焦量，在設定為焦深DOF之0.5倍至3倍之振幅時效果較高。 Next, the defocus characteristic Cm which changes the arc-shaped change in the exposure width A is calculated. In each case, the difference in the intensity of the point image, that is, the difference between the maximum value and the minimum value of the intensity of the point image, and the difference in the intensity of the point image intensity at two points where the defocus characteristic Cm differs by 0.5 DOF in the exposure width A is calculated. . The calculation result is shown in FIG. The vertical axis of Fig. 11 indicates the difference between the intensity changes of the two point images, and the horizontal axis indicates the object for which the difference component is obtained when the defocus characteristic Cm is changed every 0.5 DOF. That is, in the horizontal axis of Fig. 11, for example, the intensity difference (about 0.02) of the leftmost point image is the difference when the defocus characteristic Cm is changed by 0 × DOF and when the change is 0.5 × DOF. According to the simulation result of Fig. 11, the difference in the intensity of the dot image is changed from the state in which the defocus characteristic Cm has changed by 0.5 × DOF to the state in which the amount of change 1 × DOF has been changed, and the defocusing characteristic Cm has changed 2.5. When the state of the ×DOF amount shifts to the state where the amount of 3×DOF has changed, the overall difference is large. That is, in the range of 0.5 × DOF to 3 × DOF, the change in the intensity of the point image is higher than the change in the defocus amount. Therefore, depending on the defocus amount of the defocus characteristic Cm, the effect is high when the amplitude is set to 0.5 times to 3 times the depth of focus DOF.

此外，圖10之圖表中，在於基板P之表面以一定厚度塗布 有光阻作為感光層之場合，於該光阻上形成為像之點像強度之值雖會因使用之抗蝕劑等而異，但根據實驗，解像力之k1因數為0.5程度之場合，點 像強度只要大略為0.6以上，則能形成為像。此處，若將作為曝光裝置所預估之聚焦誤差設為至焦深DOF之定義式λ/NA2之散焦寬度(本實施形態中為±24μm)時，藉由將在曝光區域內之散焦之振幅即散焦寬度設為2.5×DOF，即能在像強度變化少的情形下良好地形成光罩圖案之像。 Further, in the graph of Fig. 10, when the surface of the substrate P is coated with a photoresist as a photosensitive layer with a certain thickness, the value of the image intensity formed on the photoresist is due to the use of a resist or the like. However, according to the experiment, when the k1 factor of the resolution is 0.5, the image intensity can be formed into an image as long as it is 0.6 or more. Here, when the focus error estimated as the exposure device is set to the defocus width of the definition λ/NA 2 of the depth of focus DOF (±24 μm in the present embodiment), it is to be in the exposure region. The amplitude of the defocus, that is, the defocus width is set to 2.5 × DOF, that is, the image of the reticle pattern can be favorably formed in the case where the image intensity changes little.

其次，針對在將待投影之光罩圖案設為L/S(線與空間)圖案 之場合進行各種運算。此處，以下將散焦之考慮對象設為焦深定義式之範圍亦即在本實施形態中為±24μm。L/S(線與空間)圖案，係線寬2.5μm之線狀圖案之複數條於線寬方向以2.5μm間隔排列成格子狀的圖案。進而，成像狀態由於會因照明條件而異，因此本實施形態中將照明光學系IL之照明條件即照明數值孔徑σ設為0.7。 Secondly, for the reticle pattern to be projected as an L/S (line and space) pattern In the case of various calculations. Here, in the following, the object to be defocused is set to the range of the depth of focus definition, that is, ±24 μm in the present embodiment. The L/S (line and space) pattern is a pattern in which a plurality of linear patterns having a line width of 2.5 μm are arranged in a lattice pattern at intervals of 2.5 μm in the line width direction. Further, since the imaging state differs depending on the illumination conditions, in the present embodiment, the illumination numerical aperture σ, which is the illumination condition of the illumination optical system IL, is set to 0.7.

首先，在使圖9所示之散焦特性Cm變化成各種之場合，亦 即與上述同樣地針對0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF、即以0.5DOF單位變化之場合，算出最佳聚焦狀態之L/S圖案像之光強度分布與DOF/2之散焦狀態、亦即在+24μm或-24μm算出已散焦之狀態之L/S圖案之光強度分布。 First, when the defocus characteristic Cm shown in FIG. 9 is changed into various types, That is, in the same manner as described above, for 0×DOF, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF, 3.5×DOF, 4×DOF, that is, in the case of 0.5 DOF unit. The light intensity distribution of the L/S pattern image of the best focus state and the defocus state of DOF/2, that is, the light intensity distribution of the L/S pattern in the defocused state are calculated at +24 μm or -24 μm.

根據其算出結果，在最佳聚焦狀態與DOF/2之散焦狀態之 各個算出對比之變化，將其描繪後之圖為圖12。圖12之橫軸，係表示在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度，橫軸表示對比，將最佳聚焦狀態之對比變化設為0μm(BestF)，將散焦狀態之對比變化設為±24μmDef。又，根據圖12所示之結果，將最佳聚焦狀態之對比[0μm(BestF)]與DOF/2散焦狀態之對比[±24μmDef]的比、亦即[0μm(BestF)]/[±24μmDef]算出後的結果顯示於圖13。圖13，橫軸為在曝光寬度A內圓弧狀變化之散 焦特性Cm而產生之散焦寬度，橫軸為對比。 According to the calculated result, in the best focus state and the defocus state of DOF/2 The change in each of the calculated contrasts is shown in Fig. 12. The horizontal axis of Fig. 12 shows the defocus width generated by the defocus characteristic Cm which changes in an arc shape in the exposure width A, and the horizontal axis represents the contrast, and the contrast change of the best focus state is set to 0 μm (BestF). The contrast change in the defocused state was set to ±24 μm Def. Further, according to the result shown in Fig. 12, the ratio of the best focus state contrast [0 μm (BestF)] to the DOF/2 defocus state [±24 μm Def], that is, [0 μm (BestF)] / [± The calculated result of 24 μm Def] is shown in Fig. 13 . Figure 13, the horizontal axis is the arc-shaped variation in the exposure width A. The defocus width produced by the focal characteristic Cm is plotted on the horizontal axis.

又，算出在曝光寬度A內圓弧狀變化之散焦特性Cm而產 生之散焦寬度中之CD(Critical Dimension)值[μm]與假定了光阻之截剪位準(像之光強度)。此外，CD值在散焦為±24μm之場合，截剪位準係作為最佳聚焦之場合算出。將其算出結果顯示於圖14。圖14之橫軸，係表示在曝光寬度A內之圓弧狀變化之散焦特性Cm上之散焦寬度，縱軸左側表示CD值，右側表示截剪位準之相對光強度。 Further, the defocus characteristic Cm which changes in an arc shape within the exposure width A is calculated and produced. The CD (Critical Dimension) value [μm] in the defocus width of the birth is assumed to be the intercept level of the photoresist (like the light intensity). Further, when the CD value is ±24 μm, the clipping level is calculated as the best focus. The calculation result is shown in FIG. The horizontal axis of Fig. 14 shows the defocus width on the defocus characteristic Cm of the arc-shaped change in the exposure width A, the left side of the vertical axis represents the CD value, and the right side represents the relative light intensity of the clipping level.

如圖14所示，在待投影之L/S圖案之場合，相對於在曝光 區域內之散焦振幅之變化，線寬之變化(CD值之變化)少，如先前圖12所示，對比大幅變化。然而，如圖13所示，可知隨著散焦之振幅變大，在最佳聚焦狀態之對比與在±24μm散焦狀態之對比之比接近1。如上述，在沿著圓筒面狀之投影像面Sm1之周方向設定曝光寬度A之掃描曝光方式中，藉由增大在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度，能使對比率接近1，縮小最佳聚焦狀態之像對比與散焦狀態之像對比的差。藉此，在圓筒狀之光罩M(圓筒狀之投影像面Sm1)之場合，僅藉由旋轉運動，即能進行將最佳聚焦時之對比與散焦時之對比之變化抑制得較小，抑制被曝光之圖案之線寬變化，同時增大投影像面Sm1與基板P之表面在聚焦方向(圓筒面之徑方向)的變動裕度的掃描曝光。 As shown in Figure 14, in the case of the L/S pattern to be projected, relative to the exposure The change in the defocus amplitude in the region, the change in the line width (the change in the CD value) is small, as shown in Fig. 12 previously, the contrast greatly changes. However, as shown in FIG. 13, it is understood that as the amplitude of the defocus becomes larger, the ratio of the contrast in the best focus state to the contrast in the ±24 μm defocus state is close to 1. As described above, in the scanning exposure method in which the exposure width A is set along the circumferential direction of the cylindrical projection image surface Sm1, the scattering characteristic Cm which changes in the arc in the exposure width A is generated. The focal length allows the contrast ratio to be close to 1, reducing the difference between the image contrast of the best focus state and the image of the defocus state. Thereby, in the case of the cylindrical mask M (the cylindrical projection image surface Sm1), the change of the contrast at the time of optimal focusing and the defocusing can be suppressed only by the rotational motion. Smaller, the line width variation of the pattern to be exposed is suppressed, and the scanning exposure of the variation margin of the surface of the projection image Sm1 and the surface of the substrate P in the focusing direction (the radial direction of the cylindrical surface) is increased.

其次，針對在將光罩之圖案設為孤立線圖案之場合進行各種 運算。此處，以下將散焦之考慮對象設為焦深定義式之範圍亦即在本實施形態中為±24μm。孤立線圖案，係線寬2.5μm之線狀圖案。進而，成像狀態由於會因照明條件而異，因此將作為照明條件之照明數值孔徑σ設為0.7。 Next, various kinds of cases are performed in the case where the pattern of the photomask is set as an isolated line pattern. Operation. Here, in the following, the object to be defocused is set to the range of the depth of focus definition, that is, ±24 μm in the present embodiment. An isolated line pattern with a line pattern of 2.5 μm wide. Further, since the imaging state differs depending on the illumination conditions, the illumination numerical aperture σ as the illumination condition is set to 0.7.

與先前模擬之L/S圖案之廠合同樣地，首先，在使圖9所示 之散焦特性Cm變化成各種之場合，亦即與上述同樣地針對0×DOF,0.5×DOF,1×DOF,1.5×DOF,2×DOF,2.5×DOF,3×DOF,3.5×DOF,4×DOF、即以0.5DOF單位變化之場合，算出最佳聚焦狀態之孤立線圖案像之光強度分布與DOF/2之散焦狀態、亦即在+24μm或-24μm算出已散焦之狀態之孤立線圖案之光強度分布。根據其算出結果，求出相對於如圖15所示之各0.5DOF之散焦寬度之變化之像對比的變化特性。 In the same way as the factory of the previously simulated L/S pattern, first, as shown in FIG. When the defocus characteristic Cm is changed into various types, that is, as described above, for 0×DOF, 0.5×DOF, 1×DOF, 1.5×DOF, 2×DOF, 2.5×DOF, 3×DOF, 3.5×DOF, 4×DOF, that is, when the unit changes by 0.5DOF, the light intensity distribution of the isolated line pattern image in the best focus state and the defocus state of DOF/2, that is, the defocused state is calculated at +24 μm or -24 μm. The intensity distribution of the isolated line pattern. Based on the calculated results, the change characteristics of the image contrast with respect to the change in the defocus width of each 0.5 DOF as shown in Fig. 15 were obtained.

圖15之橫軸，係表示在曝光寬度A內圓弧狀變化之散焦特 性Cm而產生之散焦寬度，橫軸表示孤立線圖案像之對比。又，根據圖15所示之結果，與先前圖13同樣地，將最佳聚焦狀態之對比[0μm(BestF)]與DOF/2散焦狀態之對比[±24μmDef]的比、亦即[0μm(BestF)]/[±24μmDef]算出後的結果顯示於圖16。圖16，橫軸為在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度，橫軸為對比率。 The horizontal axis of Fig. 15 shows the defocusing of the arc-shaped change in the exposure width A. The defocus width produced by the Cm, and the horizontal axis represents the contrast of the isolated line pattern image. Further, based on the result shown in Fig. 15, the ratio of the best focus state comparison [0 μm (BestF)] to the DOF/2 defocus state [±24 μm Def], that is, [0 μm) is obtained as in the previous Fig. 13 . The result of (BestF)]/[±24 μmDef] is shown in Fig. 16. In Fig. 16, the horizontal axis represents the defocus width generated by the defocus characteristic Cm which changes arcwise in the exposure width A, and the horizontal axis represents the contrast ratio.

又，算出在曝光寬度A內圓弧狀變化之散焦特性Cm而產 生之散焦寬度中之CD(Critical Dimension)值[μm]與假定了光阻之截剪位準(像之光強度)。此外，CD值在散焦為±24μm之場合，截剪位準係作為最佳聚焦之場合算出。將其算出結果顯示於圖17。圖17之橫軸，係表示在曝光寬度A內之圓弧狀變化之散焦特性Cm上之散焦寬度，縱軸左側表示CD值，右側表示截剪位準之相對光強度。如圖17所示，在圖案為孤立線之場合，相對於在曝光區域內之散焦振幅之變化之對比變化，較L/S圖案之場合小。相對於此，可知在圖案為孤立線之場合，相對於散焦量之變化，線寬(CD值)之變化大。 Further, the defocus characteristic Cm which changes in an arc shape within the exposure width A is calculated and produced. The CD (Critical Dimension) value [μm] in the defocus width of the birth is assumed to be the intercept level of the photoresist (like the light intensity). Further, when the CD value is ±24 μm, the clipping level is calculated as the best focus. The calculation result is shown in FIG. The horizontal axis of Fig. 17 indicates the defocus width on the defocus characteristic Cm of the arc-shaped change in the exposure width A, the left side of the vertical axis represents the CD value, and the right side represents the relative light intensity of the clipping level. As shown in Fig. 17, in the case where the pattern is an isolated line, the contrast change with respect to the change in the defocus amplitude in the exposure region is smaller than in the case of the L/S pattern. On the other hand, when the pattern is an isolated line, the change in the line width (CD value) is large with respect to the change in the amount of defocus.

因此，藉由將在曝光寬度A內圓弧狀變化之散焦特性Cm 而產生之散焦寬度設定為較大之2.5×DOF或3×DOF，即使所設定之聚焦位置產生變動，亦能抑制曝光於基板P之圖案之線寬變化。亦即，即使在曝光時因各種理由使預先設定之投影像面Sm1與基板P之表面在聚焦方向之相對位置關係變動，亦能抑制相對於該聚焦變動之線寬變化，能良好地保持依序製造於基板P上之顯示面板或電子元件的品質。又，可知最佳聚焦時之線寬2.5μm之孤立線，為2.5μm之截剪位準會隨著增大在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度而變成越大之值，其結果，線寬之變化亦相對於散焦而變小。 Therefore, the defocus characteristic Cm which changes in an arc shape within the exposure width A The resulting defocus width is set to a larger 2.5 × DOF or 3 × DOF, and the line width variation of the pattern exposed to the substrate P can be suppressed even if the set focus position is changed. In other words, even if the relative positional relationship between the predetermined projection image surface Sm1 and the surface of the substrate P in the focus direction is changed for various reasons during exposure, the change in the line width with respect to the focus variation can be suppressed, and the compliance can be favorably maintained. The quality of the display panel or electronic component fabricated on the substrate P. Further, it can be seen that the isolated line having a line width of 2.5 μm at the time of optimal focusing has a defocusing width which is caused by an increase in the defocusing characteristic Cm of the arc-shaped change in the exposure width A with a cutting line of 2.5 μm. It becomes a larger value, and as a result, the change in the line width is also smaller than the defocus.

又，使用先前之圖14與圖17，比較因圖案差異導致之截剪 位準之差異可知，若將在曝光寬度A內圓弧狀變化之散焦特性Cm而產生之散焦寬度設為2.25×DOF，相較於L/S圖案與孤立線圖案兩者之截剪位準(光強度)大致一致。因此，藉由將因散焦特性Cm而產生之散焦寬度設為2.25×DOF之範圍，即使在L/S圖案與孤立線圖案混在之光罩圖案之場合，亦能製造高品質之基板。藉此，不用考量在L/S圖案與孤立線圖案中截剪位準不一致之場合所必須之光罩圖案之線寬修正(OPC、線寬偏置)等，能使兩者共存。又，由於不需要為了線寬修正(OPC、線寬偏置)而進行光罩之重製或為了調整而必須製造複數片光罩，因此能減低之製造之步驟與成本。又，藉由於線寬設定偏置，改變光罩圖案之一部分之線寬，亦能抑制在該部分相反地使焦深變窄等不良情形產生。 Also, using the previous Figure 14 and Figure 17, compare the cuts caused by the pattern difference The difference in the level indicates that the defocus width generated by the defocus characteristic Cm which changes arcwise in the exposure width A is set to 2.25 × DOF, which is compared with the cut of the L/S pattern and the isolated line pattern. The level (light intensity) is approximately the same. Therefore, by setting the defocus width due to the defocus characteristic Cm to a range of 2.25 × DOF, a high-quality substrate can be manufactured even in the case where the L/S pattern and the isolated line pattern are mixed in the mask pattern. Therefore, it is not necessary to consider the line width correction (OPC, line width offset) of the mask pattern necessary for the case where the L/S pattern and the isolated line pattern do not coincide with each other, so that the two can coexist. Further, since it is not necessary to reproduce the mask for the line width correction (OPC, line width offset) or to manufacture a plurality of masks for adjustment, the manufacturing steps and costs can be reduced. Further, by setting the offset of the line width and changing the line width of one portion of the mask pattern, it is possible to suppress the occurrence of a problem in which the depth of focus is narrowed in the opposite direction.

[第3實施形態] [Third embodiment]

其次，參照圖18說明第3實施形態之曝光裝置U3b。此外，為了避免 重複之記載，係僅針對與第2實施形態相異之部分加以說明，對與第2實施形態相同之構成要素係賦予與第2實施形態相同符號加以說明。圖18係顯示第3實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第2實施形態之曝光裝置U3雖係反射光罩之光成為投影光束之反射型光罩的構成，但第3實施形態之曝光裝置U3b係使用透射過光罩之光成為投影光束之透射型光罩的構成。 Next, an exposure apparatus U3b according to the third embodiment will be described with reference to Fig. 18 . In addition, in order to avoid In the description of the second embodiment, the same components as those in the second embodiment will be described with the same reference numerals as in the second embodiment. Fig. 18 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a third embodiment. In the exposure apparatus U3 of the second embodiment, the light reflecting the mask is a reflection type of the projection beam, but the exposure apparatus U3b of the third embodiment uses the light transmitted through the mask to become a transmission type of the projection beam. The composition of the cover.

第3實施形態之曝光裝置U3b中，光罩保持機構11a具備保 持光罩MA之光罩保持圓筒21a與支承光罩保持圓筒21a之導輥93、驅動光罩保持圓筒21a之驅動輥94、以及驅動部96。 In the exposure apparatus U3b of the third embodiment, the mask holding mechanism 11a is provided with protection. The mask holding cylinder 21a holding the mask MA and the guide roller 93 supporting the mask holding cylinder 21a, the driving roller 94 for driving the mask holding cylinder 21a, and the driving portion 96.

光罩保持圓筒21a形成配置光罩MA上之照明區域IR之光 罩面。本實施形態中，光罩面包含使線段(母線)繞與此線段平行之軸(圓筒形狀之中心軸)旋轉的面(以下稱為圓筒面)。圓筒面例如係圓筒之外周面、圓柱之外周面等。光罩保持圓筒21a係以例如玻璃或石英等構成，係具有一定厚度之圓筒狀，其外周面(圓筒面)形成光罩面。亦即，本實施形態中，光罩MA上之照明區域IR彎曲成從中心線具有一定之曲率半徑Rm之圓筒面狀。光罩保持圓筒21a中從光罩保持圓筒21a徑方向觀看時與光罩MA之圖案重疊之部分、例如光罩保持圓筒21a之Y軸方向兩端側以外之中央部分對照明光束EL1具有透光性。 The mask holding cylinder 21a forms light that illuminates the illumination area IR on the mask MA Cover. In the present embodiment, the mask surface includes a surface (hereinafter referred to as a cylindrical surface) for rotating a line segment (bus bar) around an axis (a central axis of a cylindrical shape) parallel to the line segment. The cylindrical surface is, for example, a peripheral surface other than the cylinder, a cylindrical outer peripheral surface, or the like. The mask holding cylinder 21a is made of, for example, glass or quartz, and has a cylindrical shape having a constant thickness, and an outer peripheral surface (cylindrical surface) forms a mask surface. That is, in the present embodiment, the illumination region IR on the mask MA is curved into a cylindrical surface shape having a constant curvature radius Rm from the center line. A portion of the mask holding cylinder 21a that overlaps with the pattern of the mask MA when viewed in the radial direction of the mask holding cylinder 21a, for example, a central portion other than the both end sides of the mask holding cylinder 21a in the Y-axis direction, the illumination light beam EL1 Light transmissive.

光罩MA，例如係作成為於平坦性佳之長條狀極薄玻璃板(例 如厚度100~500μm)之一面以鉻等遮光層形成有圖案之透射型平面狀片光罩，使其順著光罩保持圓筒21a之外周面彎曲，在捲繞於(貼附於)此外周面之狀態下被使用。光罩MA具有未形成有圖案之圖案非形成區域，於圖案 非形成區域安裝於光罩保持圓筒21a。光罩MA可拆裝於光罩保持圓筒21a。 光罩MA，係與第1實施形態之光罩M同樣地，亦可取代捲繞於透明圓筒母材之光罩保持圓筒21a之方式，而於透明圓筒母材之光罩保持圓筒21a之外周面直接描繪形成鉻等遮光層所形成之光罩圖案來一體化。此情形亦由光罩保持圓筒21a發揮光罩之保持構件之功能。 The mask MA is, for example, made into a strip-shaped ultra-thin glass plate having good flatness (for example) For example, a transmissive planar sheet mask having a pattern formed of a light-shielding layer such as chrome on one side of a thickness of 100 to 500 μm is bent along the outer peripheral surface of the mask holding cylinder 21a, and is wound (attached) It is used in the state of the sun. The mask MA has a pattern non-formation region in which no pattern is formed, in the pattern The non-formation region is attached to the mask holding cylinder 21a. The mask MA is detachably attached to the mask holding cylinder 21a. In the same manner as the mask M of the first embodiment, the mask MA may be kept in a circular shape in the mask of the transparent cylinder base material instead of being wound around the mask holding cylinder 21a of the transparent cylinder base material. The mask pattern formed by forming a light shielding layer such as chrome is directly drawn on the outer peripheral surface of the cylinder 21a to be integrated. In this case as well, the reticle holding cylinder 21a functions as a holding member for the reticle.

導輥93及驅動輥94延伸於相對光罩保持圓筒21a之中心軸 為平行之Y軸方向。導輥93及驅動輥94設置成能繞與中心軸平行之軸旋轉。導輥93及驅動輥94分別係軸方向端部之外徑較其他部分之外形大，此端部外接於光罩保持圓筒21a。如上述，導輥93及驅動輥94設置成不接觸於光罩保持圓筒21a所保持之光罩MA。驅動輥94與驅動部96連接。驅動輥94藉由將從驅動部96供應之力矩傳至光罩保持圓筒21a，以使光罩保持圓筒21a繞中心軸旋轉。 The guide roller 93 and the driving roller 94 extend to the central axis of the opposite reticle holding cylinder 21a It is parallel to the Y-axis direction. The guide roller 93 and the drive roller 94 are disposed to be rotatable about an axis parallel to the central axis. The outer diameters of the end portions of the guide roller 93 and the driving roller 94 in the axial direction are larger than those of the other portions, and the end portions are externally connected to the mask holding cylinder 21a. As described above, the guide roller 93 and the driving roller 94 are disposed not to be in contact with the mask MA held by the mask holding cylinder 21a. The driving roller 94 is connected to the driving portion 96. The driving roller 94 transmits the torque supplied from the driving portion 96 to the reticle holding cylinder 21a to rotate the reticle holding cylinder 21a about the central axis.

此外，光罩保持機構11a，雖具備一個導輥93但數目不限 定，亦可為兩個以上。同樣地，光罩保持機構11a，雖具備一個驅動輥94但數目不限定，亦可為兩個以上。導輥93與驅動輥94中至少一個亦可配置於光罩保持圓筒21a內側，與光罩保持圓筒21a內接。又，光罩保持圓筒21a中從光罩保持圓筒21a之徑方向觀看不與光罩MA之圖案重疊之部分(Y軸方向兩端側)亦可對照明光束EL1具有透光性，亦可不具有透光性。又，導輥93及驅動輥94之一方或雙方亦可為例如圓錐台狀，其中心軸(旋轉軸)相對中心軸為非平行。 Further, the mask holding mechanism 11a is provided with one guide roller 93, but the number is not limited. It can be two or more. Similarly, the mask holding mechanism 11a is provided with one driving roller 94, but the number is not limited, and may be two or more. At least one of the guide roller 93 and the drive roller 94 may be disposed inside the mask holding cylinder 21a and inscribed in the mask holding cylinder 21a. In the mask holding cylinder 21a, the portion (the both end sides in the Y-axis direction) that does not overlap the pattern of the mask MA as viewed from the radial direction of the mask holding cylinder 21a can also have transparency to the illumination light beam EL1. It may not have light transmission. Further, one or both of the guide roller 93 and the drive roller 94 may be, for example, a truncated cone shape, and the central axis (rotation axis) thereof is non-parallel with respect to the central axis.

本實施形態之光源裝置13a具備光源(圖示略)及照明光學系 ILa。照明光學系ILa與複數個投影光學系PL1~PL6之各個對應地具備排列 於Y軸方向之複數個(例如六個)照明光學系ILa1~ILa6。光源能與上述之各種光源裝置13a同樣地使用各種光源。從光源射出之照明光，照度分布被均一化，透過例如光纖等導光構件區分至複數個照明光學系ILa1~ILa6。 The light source device 13a of the present embodiment includes a light source (not shown) and an illumination optical system ILa. The illumination optical system ILa and the plurality of projection optical systems PL1 to PL6 are arranged in correspondence with each other. A plurality of (for example, six) illumination optical systems ILa1 to IRa6 in the Y-axis direction. The light source can use various light sources in the same manner as the various light source devices 13a described above. The illuminance distribution emitted from the light source is uniformized, and is divided into a plurality of illumination optical systems ILa1 to IRa6 by a light guiding member such as an optical fiber.

複數個照明光學系ILa1~ILa6之各個，包含透鏡等複數個 光學構件。複數個照明光學系ILa1~ILa6之各個，包含例如積分光學系、桿透鏡、複眼透鏡等，藉由均一照度分布之照明光束EL1照明照明區域IR。 本實施形態中，複數個照明光學系ILa1~ILa6配置於光罩保持圓筒21a內側。複數個照明光學系ILa1~ILa6之各個從光罩保持圓筒21a內側通過光罩保持圓筒21a而照明保持於光罩保持圓筒21a之外周面之光罩MA上之各照明區域。 Each of a plurality of illumination optical systems, ILa1 to ILa6, including a plurality of lenses Optical components. Each of the plurality of illumination optical systems ILa1 to IRa6 includes, for example, an integrator optical system, a rod lens, a fly-eye lens, etc., and the illumination region IR is illuminated by the illumination beam EL1 having a uniform illumination distribution. In the present embodiment, a plurality of illumination optical systems ILa1 to ILa6 are disposed inside the mask holding cylinder 21a. Each of the plurality of illumination optical systems ILa1 to ILa6 passes through the mask holding cylinder 21a from the inside of the mask holding cylinder 21a, and illuminates the respective illumination regions held by the mask MA on the outer peripheral surface of the mask holding cylinder 21a.

光源裝置13a藉由照明光學系ILa1~ILa6導引從光源射出之 光，將被導引之照明光束EL1從光罩保持圓筒21a內部照射於光罩MA。光源裝置13，係藉由照明光束EL1以均一明度照明光罩保持圓筒11a所保持之光罩MA之一部分(照明區域IR)。此外，光源亦可配置於光罩保持圓筒21a內側，亦可配置於光罩保持圓筒21a外側。又，光源亦可係與曝光裝置U3b不同之裝置(外部裝置)。 The light source device 13a is guided by the illumination optical systems ILa1 to ILa6 to emit light from the light source. Light, the guided illumination light beam EL1 is irradiated from the inside of the reticle holding cylinder 21a to the reticle MA. The light source device 13 illuminates a portion (illumination region IR) of the reticle MA held by the reticle holding cylinder 11a with uniform illumination by the illumination light beam EL1. Further, the light source may be disposed inside the mask holding cylinder 21a or may be disposed outside the mask holding cylinder 21a. Further, the light source may be a device (external device) different from the exposure device U3b.

曝光裝置U3a，在使用透射型光罩作為光罩時，亦與曝光裝 置U3、U3a同樣地，藉由將投影像面與曝光面之關係如上所述設定成於曝光面有兩處作為最佳聚焦狀態之位置的關係，而能得到與上述相同之效果。 The exposure device U3a is also used with the exposure device when the transmissive reticle is used as the reticle Similarly, in the case of U3 and U3a, the relationship between the projection image surface and the exposure surface is set so as to have two positions on the exposure surface as the position of the optimum focus state as described above, and the same effects as described above can be obtained.

[第4實施形態] [Fourth embodiment]

其次，參照圖19說明第4實施形態之曝光裝置U3c。此外，為了避免重複之記載，係僅針對與第1實施形態相異之部分加以說明，對與第1實 施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。圖19係顯示第4實施形態之曝光裝置(基板處理裝置)之整體構成的圖。第1實施形態之曝光裝置U3雖係使用將圓筒狀之反射型光罩M保持於能旋轉之光罩保持圓筒21的構成，但第4實施形態之曝光裝置U3c則係將平板狀之反射型光罩MB保持於能移動之光罩保持機構11b的構成。 Next, an exposure apparatus U3c according to the fourth embodiment will be described with reference to Fig. 19 . In addition, in order to avoid duplication, only the part different from the first embodiment will be described, and the first one will be described. The same components as those in the first embodiment are denoted by the same reference numerals. Fig. 19 is a view showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. In the exposure apparatus U3 of the first embodiment, the cylindrical reflection mask M is held in the rotatable mask holding cylinder 21, but the exposure apparatus U3c of the fourth embodiment has a flat shape. The reflective reticle MB is held in a movable reticle holding mechanism 11b.

第4實施形態之曝光裝置U3c中，光罩保持機構11b具備保 持平面狀之光罩MB之光罩載台110與使光罩載台110在與中心面CL正交之面內沿著X方向掃描移動的移動裝置(圖示略)。 In the exposure apparatus U3c of the fourth embodiment, the mask holding mechanism 11b is provided with protection. A mask unit 110 that holds the flat mask MB and a moving device (not shown) that scans the mask stage 110 in the X direction in a plane orthogonal to the center plane CL.

由於圖19之光罩MB之面P1係實質上與XY面平行之平 面，因此從光罩MB反射之投影光束EL2之主光線係與XY面垂直。因此，照明光罩MB上之各照明區域IR1~IR6之來自照明光學系IL1~IL6之照明光束EL1之主光線亦配置成相對XY面成垂直。 Since the face P1 of the mask MB of Fig. 19 is substantially parallel to the XY plane Therefore, the chief ray of the projection beam EL2 reflected from the reticle MB is perpendicular to the XY plane. Therefore, the chief ray of the illumination light beam EL1 from the illumination optical systems IL1 to IL6 of each of the illumination regions IR1 to IR6 on the illumination mask MB is also arranged to be perpendicular to the XY plane.

在照明於光罩MB之照明光束EL1之主光線與XY面成垂直 之場合，偏光分束器PBS，配置成射入1/4波長板41之照明光束EL1之主光線之射入角θ 1成為布魯斯特角θ B，在1/4波長板41反射之照明光束EL1之主光線與XY面成垂直。伴隨此偏光分束器PBS之配置之變更，照明光學模組ILM之配置亦適當變更。 The chief ray of the illumination beam EL1 illuminated in the reticle MB is perpendicular to the XY plane In the case where the polarization beam splitter PBS is disposed, the incident angle θ 1 of the chief ray of the illumination light beam EL1 incident on the quarter-wavelength plate 41 becomes the Brewster angle θ B , and the illumination beam reflected by the quarter-wavelength plate 41 The chief ray of EL1 is perpendicular to the XY plane. With the change of the arrangement of the polarization beam splitter PBS, the arrangement of the illumination optical module ILM is also appropriately changed.

又，在從光罩MB反射之投影光束EL2之主光線與XY面成垂直之場合，投影光學模組PLM之第1光學系61所包含之第1偏向構件70之第1反射面P3，係設成使來自偏光分束器PBS之投影光束EL2反射，使反射之投影光束EL2通過第1透鏡群71而射入第1凹面鏡72的角度。具體而言，第1偏向構件70之第1反射面P3，係相對第2光軸BX2(XY面) 實質設定成45°。 Further, when the chief ray of the projection light beam EL2 reflected from the mask MB is perpendicular to the XY plane, the first reflection surface P3 of the first deflecting member 70 included in the first optical system 61 of the projection optical module PLM is The projection light beam EL2 from the polarization beam splitter PBS is reflected so that the reflected projection light beam EL2 passes through the first lens group 71 and enters the angle of the first concave mirror 72. Specifically, the first reflecting surface P3 of the first deflecting member 70 is opposed to the second optical axis BX2 (XY plane). The essence is set to 45°.

又，第4實施形態亦與先前之圖2同樣地，於XZ面內觀察 時，從光罩MB上之照明區域IR1(及IR3、IR5)中心點至照明區域IR2(及IR4、IR6)中心點之X方向之周長，係設定成與從順著支承面P2之基板P上之投影區域PA1(及PA3、PA5)之中心點至第2投影區域PA2(及PA4、PA6)中心點之周長實質相等。 Further, the fourth embodiment is also observed in the XZ plane as in the previous Fig. 2 The circumference in the X direction from the center point of the illumination area IR1 (and IR3, IR5) on the mask MB to the center point of the illumination area IR2 (and IR4, IR6) is set to be the substrate from the support surface P2. The circumference of the projection area PA1 (and PA3, PA5) on P to the center of the second projection area PA2 (and PA4, PA6) is substantially equal.

圖19之曝光裝置U3c亦同樣地，下位控制裝置16控制光罩 保持機構11之移動裝置(掃描曝光用之線性馬達或微動用之致動器等)，與基板支承圓筒25之旋轉同步地驅動光罩載台110。圖19之曝光裝置U3c，必須在光罩MB往+X方向之同步移動中進行掃描曝光後，進行使光罩MB返回至-X方向之初始位置的動作(捲回)。因此，在使基板支承圓筒25以一定速度連續旋轉而將基板P以等速持續進給時，在光罩MB之捲回動作期間係不進行對基板P上之圖案曝光，而係在基板P之搬送方向斷續地(分離地)形成面板用圖案。然而，實用上，由於掃描曝光時之基板P之速度(此處為周速)與光罩MB之速度係假定為50~100mm/s，因此在光罩MB之捲回時只要將光罩載台110以例如500mm/s之最高速驅動，即能縮小形成於基板P上之面板用圖案在搬送方向之空白處。 Similarly, the exposure device U3c of Fig. 19 also controls the mask by the lower control device 16. The moving device (the linear motor for scanning exposure or the actuator for fine movement, etc.) of the holding mechanism 11 drives the mask stage 110 in synchronization with the rotation of the substrate supporting cylinder 25. In the exposure apparatus U3c of Fig. 19, it is necessary to perform scanning (expansion) of returning the mask MB to the initial position in the -X direction after performing scanning exposure in the synchronous movement of the mask MB in the +X direction. Therefore, when the substrate supporting cylinder 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed, the pattern exposure on the substrate P is not performed during the winding operation of the mask MB, but is applied to the substrate. The conveying direction of P intermittently (separately) forms a pattern for a panel. However, practically, since the speed of the substrate P (here, the peripheral speed) and the speed of the reticle MB during scanning exposure are assumed to be 50 to 100 mm/s, it is only necessary to carry the photomask when the reticle MB is retracted. The stage 110 is driven at the highest speed of, for example, 500 mm/s, that is, the pattern for the panel formed on the substrate P can be reduced in the blank direction of the conveyance direction.

其次，參照圖20說明第4實施形態之曝光裝置U3c中之光 罩之圖案之投影像面與基板之曝光面的關係。圖20係說明光罩之圖案之投影像面與基板之曝光面的關係的說明圖。 Next, the light in the exposure device U3c of the fourth embodiment will be described with reference to FIG. The relationship between the projected image surface of the mask pattern and the exposed surface of the substrate. Fig. 20 is an explanatory view showing the relationship between the projection image surface of the pattern of the photomask and the exposure surface of the substrate.

曝光裝置U3c，係藉由投影光學系PL將投影光束EL2成像以形成光罩MB之圖案的投影像面Sm2。投影像面Sm2係將光罩MB之圖 案成像的位置，係作為最佳聚焦之位置。此處，光罩MB如上述係以平面配置。藉此，投影像面Sm2亦成為平面(在ZX平面中為直線)。又，曝光裝置U3c中，基板P之表面為曝光面Sp。此處，所謂曝光面Sp係基板P之表面。基板P如上所述保持於圓筒形狀之基板支承圓筒25。藉此，曝光面Sp成為曲率半徑Rm之曲面(在ZX平面中為曲線)。又，曝光面Sp，係與掃描曝光方向正交之方向為曲面的軸。因此，圖20所示之曝光面Sp，成為相對掃描曝光方向彎曲之曲線。曝光面Sp，在投影區域PA在掃描曝光方向之曝光寬度A之位置之變化量為△p。投影像面Sm2為平面。因此，在投影區域PA在掃描曝光方向之曝光寬度A之位置之變化量為0。此處，曝光裝置U3c中，係將相對於投影像面Sm2之曝光面Sp之位置設為實際曝光面Spa。 實際曝光面Spa係於掃描曝光方向中在與投影像面Sm2相異之兩個位置Pa2,Pb2相交。此外，曝光裝置U3c能藉由調整投影光學系PL之各光學構件之位置或藉由光罩保持機構11b及基板支承機構12之任一方調整光罩MB與基板P之間隔，來使相對於投影像面Sm2之曝光面之位置變化。 The exposure device U3c images the projection light beam EL2 by the projection optical system PL to form a projection image surface Sm2 of the pattern of the reticle MB. Projection image Sm2 is a picture of the mask MB The location of the image is taken as the best focus position. Here, the reticle MB is arranged in a plane as described above. Thereby, the projection image plane Sm2 also becomes a plane (a straight line in the ZX plane). Further, in the exposure device U3c, the surface of the substrate P is the exposure surface Sp. Here, the exposure surface Sp is the surface of the substrate P. The substrate P is held by the cylindrical substrate supporting cylinder 25 as described above. Thereby, the exposure surface Sp becomes a curved surface of a curvature radius Rm (a curve in the ZX plane). Further, the exposure surface Sp is an axis orthogonal to the scanning exposure direction and is a curved surface. Therefore, the exposure surface Sp shown in Fig. 20 is a curve which is curved with respect to the scanning exposure direction. The amount of change in the exposure surface Sp at the position of the exposure width A of the projection area PA in the scanning exposure direction is Δp. The projection image surface Sm2 is a plane. Therefore, the amount of change in the position of the exposure width A of the projection area PA in the scanning exposure direction is zero. Here, in the exposure device U3c, the position of the exposure surface Sp with respect to the projection image surface Sm2 is set as the actual exposure surface Spa. The actual exposure surface Spa intersects at two positions Pa2, Pb2 which are different from the projection image surface Sm2 in the scanning exposure direction. Further, the exposure device U3c can adjust the position of each optical member of the projection optical system PL or adjust the interval between the mask MB and the substrate P by either of the mask holding mechanism 11b and the substrate supporting mechanism 12 to make a relative projection The position of the exposure surface of the image plane Sm2 changes.

曝光裝置U3c中，投影像面Sm2與實際曝光面Spa係在相 異之兩個位置Pa2,Pb2相交，藉此，在曝光寬度A內，在實際曝光面Spa上之位置Pa2中聚焦狀態成為最佳聚焦，在實際曝光面Spa上之位置Pb2中聚焦狀態成為最佳聚焦。 In the exposure device U3c, the projection image surface Sm2 is in phase with the actual exposure surface Spa. The two different positions Pa2 and Pb2 intersect, whereby the focus state becomes the best focus in the position Pa2 on the actual exposure surface Spa within the exposure width A, and the focus state becomes the most in the position Pb2 on the actual exposure surface Spa. Good focus.

曝光裝置U3c，即使使光罩MB之表面為平面，使基板P之 表面為圓筒形狀，亦能與曝光裝置U3、U3a、U3b同樣地，對光罩圖案投影至基板P側之掃描曝光方向之投影像面Sm2與被曝光之基板P之曝光面Sp賦予圓筒形狀差。進而，曝光裝置U3c中，投影像面Sm2與實際曝光面Spa 係在相異之兩個位置Pa2,Pb2相交，在相異之兩個位置中曝光面之聚焦狀態成為最佳聚焦。 The exposure device U3c, even if the surface of the mask MB is made flat, causes the substrate P to Similarly to the exposure apparatuses U3, U3a, and U3b, the surface of the projection image surface Sm2 in which the mask pattern is projected in the scanning exposure direction on the substrate P side and the exposure surface Sp of the exposed substrate P can be given to the cylinder. Poor shape. Further, in the exposure device U3c, the image plane Sm2 and the actual exposure surface Spa are projected. At the two different positions Pa2, Pb2 intersect, and the focus state of the exposure surface becomes the best focus in the two different positions.

藉此，曝光裝置U3c亦同樣地，藉由光罩保持圓筒21之旋 轉運動，即能在掃描曝光方向之曝光寬度A內使聚焦狀態連續地變化，進而能抑制相對於實質聚焦之像對比變化。又，曝光裝置U3c亦能得到與曝光裝置U3相同之各種效果。如上述，即使在僅將投影像面與曝光面(基板P之表面)之一方作成曲面之場合，亦能得到與將投影像面與曝光面兩方作成曲面之場合相同的效果。 Thereby, the exposure device U3c similarly holds the cylinder 21 by the reticle. The turning motion enables the focus state to be continuously changed within the exposure width A of the scanning exposure direction, thereby suppressing the contrast change with respect to the substantial focus image. Further, the exposure device U3c can also obtain various effects similar to those of the exposure device U3. As described above, even when only one of the projection image surface and the exposure surface (the surface of the substrate P) is curved, it is possible to obtain the same effect as when both the projection image surface and the exposure surface are curved.

此處，曝光裝置U3c，能以將上述式之基板P之掃描曝光方 向之投影像面Sm2之圓筒半徑r1設為0之下述式求出在曝光寬度A內圓弧狀變化之散焦寬度△。 Here, the exposure apparatus U3c, the radius of the cylindrical projection can be to the scanning exposure of the substrate P above formula direction Sm2 of the image plane 0 of r 1 is set by the following equation arcuate bulk of changes in exposure width A Focal width △.

△=r2-((r2 2)-(A/2)2)1/2 △=r 2 -((r 2 2 )-(A/2) 2 ) 1/2

此處，曝光裝置U3c中，由於光罩圖案之投影像面Sm2之曲率半徑為∞，因此在曝光寬度A內圓弧狀變化之散焦特性Cm，僅以先前之式3求出。亦即，在曝光裝置U3c之場合之散焦特性Cm(=△Rp)係以 來求出。 Here, in the exposure apparatus U3c, since the curvature radius of the projection image surface Sm2 of the mask pattern is ∞, the defocus characteristic Cm which changes circularly in the exposure width A is obtained only by the following formula 3. That is, the defocus characteristic Cm (= ΔRp) in the case of the exposure device U3c is To find out.

此外，本實施形態之曝光装置，在光罩保持機構與基板支承機構之中，以曲面保持者為第1支承部材，以曲面或平面支承者為第2支承部材。 Further, in the exposure apparatus of the present embodiment, among the mask holding mechanism and the substrate supporting mechanism, the curved holder is the first supporting member, and the curved surface or the flat holder is the second supporting member.

<曝光方法> <Exposure method>

其次，參照圖21說明曝光方法。圖21係顯示曝光方法之流程圖。 Next, an exposure method will be described with reference to FIG. 21. Figure 21 is a flow chart showing the exposure method.

圖21所示之曝光方法中，首先係以基板支承機構將基板P 支承於支承面P2(步驟S101)，以光罩保持機構將光罩M支承於面P1(步驟S102)。藉此，光罩M與基板P成為對向之狀態。此外，步驟S101與步驟S102之順序亦可相反。又，面P1、支承面P2之其中任一方為第1面，另一方為第2面。第1面係以既定曲率彎曲成圓筒面状之形狀。 In the exposure method shown in FIG. 21, the substrate P is firstly supported by a substrate supporting mechanism. The support surface P2 is supported (step S101), and the mask M is supported by the mask P to the surface P1 (step S102). Thereby, the mask M and the substrate P are in a state of being opposed. Further, the order of steps S101 and S102 may be reversed. Further, one of the surface P1 and the support surface P2 is the first surface, and the other is the second surface. The first surface is curved in a cylindrical shape with a predetermined curvature.

其次，調整相對於曝光面之聚焦位置(步驟S103)。具體而 言，係在基板P之表面所設定之投影區域PA之曝光寬度A內，在掃描曝光方向包含兩處最佳聚焦位置之位置設定聚焦位置。 Next, the focus position with respect to the exposure surface is adjusted (step S103). Specifically In other words, in the exposure width A of the projection area PA set on the surface of the substrate P, the focus position is set at a position where the scanning exposure direction includes two optimum focus positions.

聚焦位置之調整結束後，使基板P與光罩M之掃描曝光方 向之相對移動(旋動)開始(步驟S104)。亦即，藉由基板支承機構及光罩保持機構之至少一方開始使基板P與光罩M之至少一方移動於掃描曝光方向的動作。 After the adjustment of the focus position is completed, the scanning exposure of the substrate P and the mask M is performed. The relative movement (swivel) starts (step S104). In other words, at least one of the substrate supporting mechanism and the mask holding mechanism starts the operation of moving at least one of the substrate P and the mask M in the scanning exposure direction.

在使相對移動開始後，使對投影區域PA內之投影光束之投 射開始(步驟S105)。亦即，將來自照明光之照明區域IR所配置之光罩之圖案的光束投射於配置基板P之投影區域PA。藉此，圖21所示之曝光方法，係在基板P之曝光面中，將在掃描曝光方向包含兩處最佳聚焦位置之光束投射於投影區域。 After the relative movement is started, the projection of the projection beam in the projection area PA is made The shooting starts (step S105). That is, the light beam from the pattern of the reticle disposed in the illumination region IR of the illumination light is projected onto the projection area PA of the placement substrate P. Thereby, the exposure method shown in FIG. 21 projects a light beam including two optimum focus positions in the scanning exposure direction onto the projection area on the exposure surface of the substrate P.

曝光方法係以以上之方式，藉由投射調整聚焦位置後之光 束，而能在基板P之曝光面中，將在掃描曝光方向包含兩處最佳聚焦位置之光束投射於投影區域。藉此，能得到上述之各種効果。此外，本實施形態中雖說明了調整聚焦位置之場合，但依裝置之設定不同，亦可使在掃描 曝光方向包含兩處最佳聚焦位置的位置成為聚焦位置。 The exposure method is in the above manner, by projecting the light after adjusting the focus position The beam can be projected onto the projection area in the exposure surface of the substrate P by including two light beams at the best focus position in the scanning exposure direction. Thereby, various effects described above can be obtained. Further, in the present embodiment, the case where the focus position is adjusted has been described, but depending on the setting of the device, the scanning may be performed. The position where the exposure direction includes the two best focus positions becomes the focus position.

<元件製造方法> <Component Manufacturing Method>

其次，參照圖22，說明元件製造方法。圖22係顯示元件製造系統之元件製造方法的流程圖。 Next, a method of manufacturing a component will be described with reference to Fig. 22 . Fig. 22 is a flow chart showing a method of manufacturing a component of the component manufacturing system.

圖22所示之元件製造方法，首先，係進行例如使用有機EL 等自發光元件形成之顯示面板之功能、性能設計，以CAD等設計所需之電路圖案及配線圖案(步驟S201)。接著，根據以CAD等設計之各種的每一層圖案，製作所需層量之光罩M(步驟S202)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)的供應用捲筒ER1(步驟S203)。又，於此步驟S203中準備之捲筒狀基板P，可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者。 The component manufacturing method shown in FIG. 22 is first performed, for example, using an organic EL. The function and performance design of the display panel formed by the self-luminous element are designed, and the required circuit pattern and wiring pattern are designed by CAD or the like (step S201). Next, a mask M of a desired layer amount is produced in accordance with each of various pattern patterns designed by CAD or the like (step S202). The supply reel ER1 of the flexible substrate P (resin film, metal foil film, plastic, etc.) on which the substrate of the display panel is wound is prepared (step S203). Further, the roll substrate P prepared in the step S203 may be a surface whose surface is modified as necessary, or a bottom layer (for example, a fine unevenness by an imprint method) may be formed in advance, or a layer of light may be laminated in advance. Inductive functional film or transparent film (insulating material).

接著，於基板P上形成構成顯示面板元件之電極或以配線、 絶緣膜、TFT(薄膜半導體)等構成之底板層，並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S204)。於此步驟S204中，雖包含使用先前各實施形態所說明之曝光裝置U3使光阻層曝光之習知微影製程，但亦包含使取代光阻而塗有感光性矽烷耦合劑之基板P圖案曝光來於表面形成親撥水性之圖案的曝光製程、使光感應性觸媒層圖案曝光並以無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程等之處理。 Next, an electrode constituting the display panel element is formed on the substrate P or is wired, A light-emitting layer (display pixel portion) composed of a self-luminous element such as an organic EL, such as an insulating film or a TFT (thin film semiconductor) layer, is formed on the substrate (step S204). In the step S204, the conventional lithography process for exposing the photoresist layer using the exposure device U3 described in the previous embodiments is included, but the substrate P pattern coated with the photosensitive decane coupling agent instead of the photoresist is also included. Exposure process for forming a pattern of water-repellent on the surface, exposing the pattern of the photo-sensitive catalyst layer, forming a metal film pattern (wiring, electrode, etc.) by electroless plating, or containing a silver-colored process The processing of drawing a pattern such as a conductive ink of a rice particle or the like.

接著，針對以捲筒方式於長條基板P上連續製造之每一顯示 面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層) 或彩色濾光片膜等，組裝元件(步驟S205)。接著，進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S206)。經由以上方式，即能製造顯示面板(可撓性顯示器)。 Next, for each display continuously manufactured on the long substrate P in a roll manner The panel element cuts the substrate P or adheres a protective film (environmentally resistant barrier layer) to the surface of each display panel element. Or a color filter film or the like, and an element is assembled (step S205). Next, an inspection step of whether the display panel element can be normally operated or whether the desired performance and characteristics are satisfied is performed (step S206). Through the above manner, a display panel (flexible display) can be manufactured.

A‧‧‧曝光寬度 A‧‧‧Exposure width

Ae,As‧‧‧端部 Ae, As‧‧‧ end

AX1‧‧‧第1軸 AX1‧‧‧1st axis

AX2‧‧‧第2軸 AX2‧‧‧2nd axis

FC1、FC2、FC3‧‧‧位置 FC1, FC2, FC3‧‧‧ position

PA‧‧‧投影區域 PA‧‧‧Projection area

Rm‧‧‧曲率半徑 Rm‧‧‧ radius of curvature

Rp‧‧‧曲率半徑 Rp‧‧ radius of curvature

Sm‧‧‧投影像面 Sm‧‧‧Projection image

Spa‧‧‧實際曝光面 Spa‧‧‧ actual exposure surface

Sp‧‧‧曝光面 Sp‧‧‧ exposure surface

Claims (21)

一種基板處理裝置，具備投影光學系，其將來自配置於照明光照明區域之光罩之圖案之光束投射於配置基板之投影區域，具備：第1支承構件，係以在前述照明區域與前述投影區域中之一方區域中沿著以既定曲率彎曲成圓筒面狀之第1面之方式，支承前述光罩與前述基板中之一方；第2支承構件，係以在前述照明區域與前述投影區域中之另一方區域中沿著既定曲率之第2面之方式，支承前述光罩與前述基板中之另一方；以及移動機構，使前述第1支承構件旋轉，以使該第1支承構件所支承之前述光罩與前述基板中之任一方移動於掃描曝光方向；前述投影光學系，係在前述基板之曝光面，將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投射於前述投影區域。 A substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a photomask disposed in an illumination light illumination region onto a projection region of a placement substrate, and includes: a first support member in the illumination region and the projection One of the mask and the substrate is supported in one of the regions in a region that is curved in a cylindrical shape with a predetermined curvature; and the second support member is in the illumination region and the projection region The other of the masks supports the other of the mask and the substrate along the second surface of the predetermined curvature; and the moving mechanism rotates the first support member to support the first support member One of the mask and the substrate is moved in a scanning exposure direction; the projection optical system is disposed on an exposure surface of the substrate, and a light beam including two optimal focus positions in the scanning exposure direction is projected on the projection area . 如申請專利範圍第1項之基板處理裝置，其中，前述投影光學系，係以前述光罩之圖案以最佳聚焦狀態被投影之投影像面與前述基板之曝光面在聚焦方向之距離具有沿著前述掃描曝光方向彎曲之差之方式，投射實質上與前述第1支承構件之前述第1面之曲率與前述第2支承構件之前述第2面之曲率之差成正比的前述光束。 The substrate processing apparatus according to claim 1, wherein the projection optical system has a projection image surface projected in an optimal focus state by the pattern of the mask and a distance of a surface of the substrate exposed in a focus direction. The light beam that is substantially proportional to the difference between the curvature of the first surface of the first support member and the curvature of the second surface of the second support member is projected to be different from the difference in the scanning exposure direction. 如申請專利範圍第2項之基板處理裝置，其中，前述第2支承構件之前述第2面，設定在從既定軸線以一定曲率半徑彎曲之圓筒面及曲率半徑為∞之平面中的任一方。 The substrate processing apparatus according to claim 2, wherein the second surface of the second support member is set to one of a cylindrical surface curved from a predetermined axis with a constant radius of curvature and a plane having a radius of curvature of ∞ . 如申請專利範圍第1至3項中任一項之基板處理裝置，其中，前述 投影光學系，在將前述投影區域在前述掃描曝光方向之中點之散焦量設為△、將焦深設為DOF時，滿足0.5<△/DOF≦3。 The substrate processing apparatus according to any one of claims 1 to 3, wherein In the projection optical system, when the defocus amount of the projection area in the scanning exposure direction is Δ and the depth of focus is DOF, 0.5 < Δ / DOF ≦ 3 is satisfied. 如申請專利範圍第4項之基板處理裝置，其中，前述投影光學系，滿足1≦△/DOF。 The substrate processing apparatus of claim 4, wherein the projection optical system satisfies 1 ≦ Δ / DOF. 如申請專利範圍第4項之基板處理裝置，其中，前述投影光學系，具有複數個分割投影光學系；前述分割投影光學系，於正交於前述掃描曝光方向之方向配置成列狀，將前述光束投射於分別對應之前述投影區域。 The substrate processing apparatus according to claim 4, wherein the projection optical system has a plurality of divided projection optical systems, and the divided projection optical system is arranged in a line in a direction orthogonal to the scanning exposure direction, and the The light beam is projected onto the respective projection areas corresponding thereto. 如申請專利範圍第6項之基板處理裝置，其中，前述投影光學系中，複數個分割投影光學系係於前述掃描曝光方向以至少兩列配置，於正交於前述掃描曝光方向之方向，相鄰之前述分割投影光學系之前述投影區域之端部彼此重疊。 The substrate processing apparatus according to claim 6, wherein in the projection optical system, the plurality of divided projection optical systems are arranged in at least two rows in the scanning exposure direction, and are orthogonal to the scanning exposure direction. The ends of the aforementioned projection regions adjacent to the divided projection optical system overlap each other. 如申請專利範圍第7項之基板處理裝置，其中，前述投影光學系，在將複數個前述分割投影光學系之各投影區域之前述掃描曝光方向之寬度加以積算的情形時，該積算值在與前述掃描曝光方向正交之方向中為一定。 The substrate processing apparatus according to claim 7, wherein the projection optical system integrates a width of the scanning exposure direction of each of the plurality of projection regions of the divided projection optical system, and the integrated value is The direction in which the scanning exposure directions are orthogonal is constant. 如申請專利範圍第4項之基板處理裝置，其中，前述第1支承構件支承前述光罩；前述第2支承構件支承前述基板。 The substrate processing apparatus according to claim 4, wherein the first support member supports the photomask, and the second support member supports the substrate. 如申請專利範圍第4項之基板處理裝置，其中，前述第1支承構件支承前述基板；前述第2支承構件支承前述光罩。 The substrate processing apparatus according to claim 4, wherein the first support member supports the substrate, and the second support member supports the photomask. 如申請專利範圍第1至3項中任一項之基板處理裝置，其中，前 述投影光學系之前述光罩之圖案之掃描曝光方向之投影像面與前述基板之掃描曝光方向之曝光面在聚焦方向的差，係以在前述掃描曝光方向之前述投影區域之寬度之大致中心作為軸而線對稱地變化。 The substrate processing apparatus according to any one of claims 1 to 3, wherein The difference between the projection surface of the scanning exposure direction of the pattern of the mask of the projection optical system and the exposure surface of the substrate in the scanning exposure direction is substantially the center of the width of the projection area in the scanning exposure direction. It changes linearly symmetrically as an axis. 如申請專利範圍第1至3項中任一項之基板處理裝置，其中，前述第2支承構件之前述第2面，設定在從既定軸線以一定曲率半徑彎曲之圓筒面，將前述基板之曝光面在前述掃描曝光方向支承成圓筒面狀。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the second surface of the second support member is set to a cylindrical surface that is curved from a predetermined axis with a constant radius of curvature, and the substrate is The exposure surface is supported in a cylindrical shape in the scanning exposure direction. 如申請專利範圍第12項之基板處理裝置，其中，前述投影光學系，在將在前述掃描曝光方向之前述投影區域之寬度設為A、將前述光罩之圖案之投影像面之曲率半徑設為r1、將前述基板之掃描曝光方向之曝光面之圓筒半徑設為r2、將前述投影光學系之數值孔徑設為NA、將曝光波長設為λ時，滿足0．5×(λ/NA2)<1-((r1 2)-(A/2)2)1/2+r2-((r2 2)-(A/2)2)1/2≦3×λ/NA2之關係。 The substrate processing apparatus according to claim 12, wherein the projection optical system has a width A of the projection area in the scanning exposure direction and a curvature radius of a projection image surface of the pattern of the mask R 1 , the cylindrical radius of the exposure surface in the scanning exposure direction of the substrate is r 2 , the numerical aperture of the projection optical system is NA, and the exposure wavelength is λ, which satisfies 0.5×(λ) /NA 2 )< 1 -((r 1 2 )-(A/2) 2 ) 1/2 +r 2 -((r 2 2 )-(A/2) 2 ) 1/2 ≦3×λ/ The relationship between NA 2 . 如申請專利範圍第13項之基板處理裝置，其中，前述投影光學系，滿足(λ/NA2)<r1-((r1 2)-(A/2)2)1/2+r2-((r2 2)-(A/2)2)1/2之關係。 The substrate processing apparatus of claim 13, wherein the projection optical system satisfies (λ/NA 2 )<r 1 -((r 1 2 )-(A/2) 2 ) 1/2 +r 2 -((r 2 2 )-(A/2) 2 ) 1/2 relationship. 一種基板處理裝置，具備投影光學系，其將來自配置於照明光照明區域之光罩之圖案之光束投射於配置基板之投影區域，具備：第1支承構件，係以在前述照明區域中沿著以第1曲率半徑彎曲成圓筒面狀之第1面之方式，支承前述光罩；第2支承構件，係以在前述投影區域中沿著以第2曲率半徑彎曲成圓筒面狀之第2面之方式，支承前述基板；以及移動機構，藉由使前述第1支承構件與前述第2支承構件旋轉，以使 前述光罩與前述基板相對於前述投影光學系移動於掃描曝光方向；前述投影光學系，係在前述基板之曝光面，將於前述掃描曝光方向包含兩處最佳聚焦位置之光束投射於前述投影區域。 A substrate processing apparatus including a projection optical system that projects a light beam from a pattern of a photomask disposed in an illumination light illumination region onto a projection region of a placement substrate, and includes a first support member along the illumination region The photomask is supported so that the first curvature radius is curved into a cylindrical first surface; and the second support member is curved in a cylindrical shape along the second curvature radius in the projection region Supporting the substrate in a two-sided manner; and moving the mechanism by rotating the first support member and the second support member The reticle and the substrate are moved in a scanning exposure direction with respect to the projection optical system; and the projection optical system is formed on the exposure surface of the substrate, and a light beam having two optimal focus positions in the scanning exposure direction is projected on the projection region. 如申請專利範圍第15項之基板處理裝置，其中，前述投影光學系，在將前述投影區域在前述掃描曝光方向之中點之散焦量設為△、將焦深設為DOF時，滿足0.5<△/DOF≦3。 The substrate processing apparatus according to claim 15, wherein the projection optical system satisfies 0.5 when the defocus amount of the projection area in the scanning exposure direction is Δ and the focal depth is DOF. <△/DOF≦3. 如申請專利範圍第16項之基板處理裝置，其中，前述投影光學系，滿足1≦△/DOF。 The substrate processing apparatus of claim 16, wherein the projection optical system satisfies 1 ≦ Δ / DOF. 如申請專利範圍第15至17項中任一項之基板處理裝置，其中，前述投影光學系，在將在前述掃描曝光方向之前述投影區域之寬度設為A、將前述光罩之圖案之投影像面之曲率半徑設為r1、將前述基板之掃描曝光方向之曝光面之圓筒半徑設為r2、將前述投影光學系之數值孔徑設為NA、將曝光波長設為λ時，滿足0．5×(λ/NA2)<1-((r1 2)-(A/2)2)1/2+r2-((r2 2)-(A/2)2)1/2≦3×λ/NA2之關係。 The substrate processing apparatus according to any one of claims 15 to 17, wherein the projection optical system has a width of the projection area in the scanning exposure direction of A and a projection of the pattern of the photomask. The curvature radius of the image plane is r 1 , the cylinder radius of the exposure surface in the scanning exposure direction of the substrate is r 2 , the numerical aperture of the projection optical system is NA, and the exposure wavelength is λ. 0.5×(λ/NA 2 )< 1 -((r 1 2 )-(A/2) 2 ) 1/2 +r 2 -((r 2 2 )-(A/2) 2 ) 1/ 2 ≦ 3 × λ / NA 2 relationship. 如申請專利範圍第18項之基板處理裝置，其中，前述投影光學系，滿足(λ/NA2)<r1-((r1 2)-(A/2)2)1/2+r2-((r2 2)-(A/2)2)1/2之關係。 The substrate processing apparatus of claim 18, wherein the projection optical system satisfies (λ/NA 2 )<r 1 -((r 1 2 )-(A/2) 2 ) 1/2 +r 2 -((r 2 2 )-(A/2) 2 ) 1/2 relationship. 如申請專利範圍第15至17項中任一項之基板處理裝置，其中，前述投影光學系之前述光罩之圖案之掃描曝光方向之投影像面與前述基板之掃描曝光方向之曝光面在聚焦方向之差，係以在前述掃描曝光方向之前述投影區域之寬度之大致中心作為軸而線對稱地變化。 The substrate processing apparatus according to any one of claims 15 to 17, wherein the projection optical surface of the pattern of the reticle of the projection optical system is in focus in a scanning exposure direction of a scanning exposure direction of the pattern of the reticle The difference in direction is linearly symmetrically changed with the approximate center of the width of the projection area in the scanning exposure direction as an axis. 一種元件製造方法，係於可撓性長條片基板形成電子元件，其包 含：對申請專利範圍第1至20項中任一項之基板處理裝置供應前述片基板，以前述掃描曝光方向成為長條之方向之方式，一邊以前述第1支承構件與前述第2支承構件中之一方支承前述片基板，一邊以前述移動機構使之移動於前述掃描曝光方向的動作；以及將被前述第1支承構件與前述第2支承構件中之另一方支承之前述光罩之圖案形成於前述片基板的動作。 A component manufacturing method for forming an electronic component on a flexible strip substrate The substrate processing apparatus according to any one of claims 1 to 20, wherein the first supporting member and the second supporting member are provided so that the scanning exposure direction is a long direction. One of the support sheets is supported by the moving mechanism to move in the scanning exposure direction; and the pattern of the photomask supported by the other of the first supporting member and the second supporting member is formed The operation of the above-mentioned sheet substrate.
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