TWI604267B - Method of manufacturing a photomask and method of manufacturing display device - Google Patents

Method of manufacturing a photomask and method of manufacturing display device Download PDF

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TWI604267B
TWI604267B TW104136894A TW104136894A TWI604267B TW I604267 B TWI604267 B TW I604267B TW 104136894 A TW104136894 A TW 104136894A TW 104136894 A TW104136894 A TW 104136894A TW I604267 B TWI604267 B TW I604267B
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film
semi
resist
pattern
light
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TW201624106A (en
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吉川裕
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Ｈｏｙａ股份有限公司
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光罩之製造方法及顯示裝置之製造方法 Method for manufacturing photomask and method for manufacturing display device

本發明係關於一種光罩之製造方法及顯示裝置之製造方法。 The present invention relates to a method of manufacturing a photomask and a method of manufacturing the display device.

已知有具有遮光部、透光部、及光透過率分別不同之第1半透光部及第2半透光部之多階之光罩。 A multi-step mask having a light-shielding portion, a light-transmitting portion, and a first semi-transmissive portion and a second semi-transmissive portion having different light transmittances is known.

於專利文獻1中，記載有4階光罩之製造方法，該方法係準備於透光性基板上依序成膜有包含對於彼此之蝕刻具有耐性之材料之第1半透光膜及遮光膜之光罩基底，對該遮光膜及第1半透光膜進行蝕刻之後，成膜第2半透光膜，進而進行蝕刻而形成透光部、遮光部、第1半透光部及第2半透光部。 Patent Document 1 describes a method for producing a fourth-order photomask, which is prepared by sequentially forming a first semi-transmissive film and a light-shielding film containing a material resistant to etching of each other on a light-transmitting substrate. After the light-shielding film and the first semi-transmissive film are etched, the second semi-transmissive film is formed, and further, etching is performed to form a light-transmitting portion, a light-shielding portion, a first semi-transmissive portion, and a second Semi-transmissive portion.

又，於專利文獻2中，記載有如下發明：於製造4階之光罩之方法中，對半透光膜之一部分區域實施與其他區域不同之表面處理，藉此，分別形成光透過率不同之第1、第2半透光部。 Further, Patent Document 2 describes an invention in which a method of manufacturing a fourth-order photomask is performed by performing surface treatment different from other regions on a partial region of the semi-transmissive film, thereby forming different light transmittances. The first and second semi-transmissive portions.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2007-249198號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-249198

[專利文獻2]日本專利特開2009-230126號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-230126

為了形成4階以上之多階光罩，於專利文獻1所記載之方法中，準備複數個分別具有預先決定之光透過率之半透光膜，並依序進行蝕刻。該方法必須根據所需之光透過率之組合設定複數個半透光膜之組成或膜厚，且實施複雜之成膜步驟，不僅如此，且存在如下制約：僅能形成於成膜前預先設定之光透過率者。 In the method described in Patent Document 1, a plurality of semi-transmissive films each having a predetermined light transmittance are prepared and sequentially etched. The method must set the composition or film thickness of the plurality of semi-transmissive films according to the combination of the required light transmittances, and carry out a complicated film forming step, which is not only the case, but also has the following restrictions: it can be formed only before the film formation. The light transmittance.

又，所形成之積層之光透過率實質上由構成其之各個單膜決定，因此，無法進行光透過率之微調整。又，由於產生由積層之半透光膜彼此之界面引起之光之作用，故而作為結果而獲得之光透過率之計算預先進行預備實驗等，而產生驗證負擔。 Further, since the light transmittance of the formed laminate is substantially determined by each of the single films constituting the layer, fine adjustment of the light transmittance cannot be performed. Further, since the light caused by the interface between the semi-transmissive films of the layers is generated, the calculation of the light transmittance obtained as a result is performed in advance, and a verification load is generated in advance.

於專利文獻2之製造方法中，藉由半透光膜之減膜以成為所需之光透過率之方式進行膜厚調整，藉此，欲相對於光透過率差較小之第1、第2半透光部形成所需之光透過率差。但是，於減膜步驟中，僅可進行提高透過率之方向之調整，不可將暫時高於所需值之光透過率向較低側修正，因此，根據如何決定減膜步驟之終點，不易使之與目標之光透過率一致。 In the manufacturing method of Patent Document 2, the film thickness is adjusted so as to reduce the light transmittance by the film reduction of the semi-transmissive film, thereby making the first difference to be small with respect to the light transmittance difference. 2 The semi-transmissive portion forms a desired difference in light transmittance. However, in the film-removing step, only the direction for increasing the transmittance can be adjusted, and the light transmittance temporarily higher than the desired value cannot be corrected to the lower side. Therefore, it is difficult to determine the end point of the film-removing step. It is consistent with the light transmittance of the target.

亦即，於該半透光部之光透過率調整中，認為較理想為，於減膜步驟中亦進行準確之光透過率測定，且可正確地掌握光透過率達到目標值之前之減膜時間。 In other words, in the light transmittance adjustment of the semi-transmissive portion, it is preferable to accurately measure the light transmittance in the film-reducing step, and to accurately grasp the film before the light transmittance reaches the target value. time.

然而，於液晶顯示裝置或有機EL(Electroluminescence，電致發光)顯示裝置所代表之顯示裝置中，對於亮度、動作之速度、節省電力、解像性等，要求具有更高之品質。 However, in a display device represented by a liquid crystal display device or an organic EL (Electroluminescence) display device, higher quality is required for brightness, speed of operation, power saving, resolution, and the like.

於該等顯示裝置之製造中，例如，為了形成使用有機絕緣膜等感光性樹脂之接觸孔等立體構造，有用地應用使用光罩之微影法。尤其是，具有局部高度不同之部分之絕緣膜、或彼此高度不同之複數個感光性間隔件等所欲形成之立體構造變得複雜，並且為了有效率地生產該立體構造，產生多階之光罩之需求。為了精密地形成此種目的之 光罩之立體構造，所使用之光罩之光透過率之管理較為重要。 In the production of the display device, for example, in order to form a three-dimensional structure such as a contact hole using a photosensitive resin such as an organic insulating film, a lithography method using a photomask is preferably applied. In particular, a three-dimensional structure in which an insulating film having a partial height is different or a plurality of photosensitive spacers having different heights from each other is complicated, and in order to efficiently produce the three-dimensional structure, multi-step light is generated. The need for a cover. In order to precisely form such a purpose The three-dimensional structure of the reticle is important for the management of the light transmittance of the reticle used.

尤其是，推斷可有利地利用4階以上之光罩(即，除具備透光部、遮光部以外，亦具備曝光之光透過率彼此不同之第1、第2半透光部之多階光罩)。為了分別精密地形成該等複數個具有彼此不同之透過率之半透光部，光透過率控制較關鍵。即，若第1半透光部及第2半透光部之各自之光透過率未正確地如設計值般形成，則於顯示裝置等最終之器件中，無法發揮滿足之功能。 In particular, it is estimated that it is advantageous to use a fourth-order or higher-order photomask (that is, a multi-step light having first and second semi-transmissive portions having different light transmittances of exposure, in addition to the light-transmitting portion and the light-shielding portion) cover). In order to precisely form the plurality of semi-transmissive portions having transmittances different from each other, the light transmittance control is more critical. In other words, when the light transmittance of each of the first semi-transmissive portion and the second semi-transmissive portion is not accurately formed as a design value, it is not possible to perform a function in a final device such as a display device.

本發明之構成1係一種光罩之製造方法，其係包括藉由使於透明基板上形成有光學膜之光罩基板之上述光學膜圖案化而形成轉印用圖案者，其特徵在於包括：準備於上述透明基板上形成有光學膜，且於該光學膜上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係於上述第1抗蝕劑膜上描繪第1描繪圖案而進行顯影；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除上述光學膜，從而使上述透明基板之表面之一部分露出；將上述第1抗蝕劑圖案剝離，並重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係於上述第2抗蝕劑膜中描繪第2描繪圖案並進行顯影，且使上述透明基板之表面之一部分及上述光學膜之表面之一部分分別露出；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩對上述光學膜進行蝕刻減膜；及將上述第2抗蝕劑圖案剝離之步驟；且以上述第2抗蝕劑圖案中之上述透明基板之露出部分成為較上述第1抗蝕劑圖案中之上述透明基板之露出部分小特定量之尺寸之方 式，對上述第2描繪圖案實施減尺寸。 The structure 1 of the present invention is a method for producing a photomask, comprising: patterning the optical film of a photomask substrate on which an optical film is formed on a transparent substrate to form a transfer pattern, comprising: a step of forming an optical film on the transparent substrate and applying a photomask substrate of the first resist film to the optical film; and a first resist pattern forming step of the first resist The first patterning step is performed by drawing a first drawing pattern on the film, and the first patterning step is to remove the optical film by using the first resist pattern as a mask to expose one surface of the transparent substrate; a step of peeling off the first resist pattern and recoating the second resist film; and a second resist pattern forming step of drawing the second drawing pattern on the second resist film and performing development And exposing one portion of the surface of the transparent substrate and a portion of the surface of the optical film to each other; and the second patterning step of etching and thinning the optical film by using the second resist pattern as a mask; Will be on a step of peeling off the second resist pattern; and exposing the exposed portion of the transparent substrate in the second resist pattern to a size smaller than an exposed portion of the transparent substrate in the first resist pattern by a specific amount square In the formula, the second drawing pattern is reduced in size.

本發明之構成2係一種光罩之製造方法，該光罩係於透明基板上具備包含透光部及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上形成有光學膜且於該光學膜上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜上描繪第1描繪圖案並進行顯影，而去除與上述透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除上述光學膜，從而使上述透明基板之表面露出；將上述第1抗蝕劑圖案剝離，且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案並進行顯影，而去除分別與上述透光部及上述半透光部對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩，且對上述光學膜進行蝕刻減膜，從而形成具有所需之曝光之光透過率之半透光部；及將上述第2抗蝕劑圖案剝離之步驟；且上述第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 According to a second aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transfer pattern including a light transmitting portion and a semi-transmissive portion having a desired light transmittance of exposure, and the photomask is provided on the transparent substrate. The manufacturing method includes a step of preparing a photomask substrate on which an optical film is formed on the transparent substrate and a first resist film is applied to the optical film, and a first resist pattern forming step. The first resist film is removed by drawing the first drawing pattern on the first resist film, and the first resist film is removed from the portion corresponding to the light transmitting portion. The first patterning step is to apply the first resist The etching agent pattern is used as a mask to etch away the optical film to expose the surface of the transparent substrate; the step of peeling off the first resist pattern and recoating the second resist film; and the second resist a pattern forming step of removing a second resist film corresponding to each of the light transmitting portion and the semi-light transmitting portion by drawing the second drawing pattern on the second resist film and developing the film; 2 a patterning step of the second resist a pattern as a mask, and etching and thinning the optical film to form a semi-transmissive portion having a desired light transmittance of exposure; and a step of peeling off the second resist pattern; and the second drawing The pattern is reduced in size corresponding to the light-transmitting portion by a specific size dimension with respect to the design size of the light-transmitting portion.

本發明之構成3係如構成2之光罩之製造方法，其特徵在於：對上述光學膜進行蝕刻減膜時之蝕刻速度以曝光之光之透過率變化量計為0.3~5.0%/min。 According to a third aspect of the present invention, in the method of manufacturing a photomask according to the second aspect, the etching rate at the time of etching and thinning the optical film is 0.3 to 5.0%/min in terms of a change in transmittance of the exposed light.

本發明之構成4係如構成2或3之光罩之製造方法，其特徵在於：進行上述蝕刻減膜之上述光學膜之膜厚為50~2000Å。 The fourth aspect of the present invention is the method for producing a photomask according to the second or third aspect, characterized in that the film thickness of the optical film subjected to the etching reduction is 50 to 2000 Å.

本發明之構成5係一種光罩之製造方法，該光罩係於透明基板上具備包含遮光部、透光部、及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1描繪圖案並進行顯影，而去除與上述透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩，蝕刻去除上述遮光膜、上述蝕刻終止膜及上述半透光膜而使上述透明基板之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案並進行顯影，而去除與上述透光部及上述半透光部分別對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述遮光膜及上述蝕刻終止膜，進而對上述半透光膜進行蝕刻減膜而形成具有上述所需之曝光之光透過率之第1半透光部；及將上述第2抗蝕劑圖案剝離之步驟；且上述第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 The fifth aspect of the present invention relates to a method of manufacturing a photomask having a light-shielding portion, a light-transmitting portion, and a transfer pattern having a semi-transmissive portion having a desired light transmittance of exposure. Further, the manufacturing method includes a photomask substrate on which a semi-transparent film, an etching stopper film, and a light shielding film are laminated on the transparent substrate, and the first resist film is coated on the laminate. a first resist pattern forming step of removing a first resist film corresponding to the light transmitting portion by drawing the first pattern on the first resist film and developing the film; a patterning step of etching the light-removing film, the etching stopper film, and the semi-transmissive film to expose a surface of the transparent substrate by using the first resist pattern as a mask; and the first resist a step of removing and recoating the second resist film; and a second resist pattern forming step of removing the second pattern by drawing the second pattern on the second resist film The light portion and the semi-transmissive portion respectively correspond to a second resist film; a second patterning step of etching the semi-transmissive film by etching and removing the light-shielding film and the etching stopper film by using the second resist pattern as a mask a first semi-transmissive portion having a light transmittance of the exposure required as described above, and a step of peeling off the second resist pattern; and the second drawing pattern pair corresponding to the light transmitting portion Partially implemented is reduced by a specific size dimension relative to the design size of the light transmitting portion.

本發明之構成6係如構成5之光罩之製造方法，其特徵在於：上述轉印用圖案進而具有第2半透光部，該第2半透光部具有與上述第1半透光部不同之曝光之光透過率，且該方法包括：將上述第2抗蝕劑圖案剝離之後，重新塗佈第3抗蝕劑膜之步驟； 第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案並進行顯影，而去除與不同於上述1半透光部之第2半透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而蝕刻去除上述遮光膜及蝕刻終止膜，從而形成第2半透光部；及將上述第3抗蝕劑圖案剝離之步驟。 According to a sixth aspect of the invention, in the method of manufacturing the reticle of the fifth aspect, the transfer pattern further includes a second semi-transmissive portion, and the second semi-transmissive portion has the first semi-transmissive portion a light transmittance of different exposures, and the method includes the steps of: re-coating the third resist film after peeling off the second resist pattern; a third resist pattern forming step of removing a portion corresponding to the second semi-transmissive portion different from the one semi-transmissive portion by drawing the third drawing pattern on the third resist film and developing the third resist pattern a third resist film; the third patterning step of etching the removal of the light shielding film and the etching stopper film by using the third resist pattern as a mask to form a second semi-transmissive portion; The step of peeling off the third resist pattern.

本發明之構成7係如構成5之光罩之製造方法，其特徵在於：上述轉印用圖案進而具有第2半透光部，該第2半透光部具有與上述第1半透光部不同之曝光之光透過率，且該方法包括：將上述第2抗蝕劑圖案剝離之後，重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案並進行顯影，而去除與第2半透光部、及上述透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩，蝕刻去除上述遮光膜及蝕刻終止膜，進而，對上述半透光膜進行蝕刻減膜而形成上述第2半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 According to a seventh aspect of the invention, in the method of manufacturing the reticle of the fifth aspect, the transfer pattern further includes a second semi-transmissive portion, and the second semi-transmissive portion has the first semi-transmissive portion a light transmittance of different exposures, and the method includes: a step of recoating the third resist film after peeling off the second resist pattern; and a third resist pattern forming step by using the above The third resist film traces the third drawing pattern and develops, and removes the third resist film corresponding to the second semi-transmissive portion and the light transmitting portion; and the third patterning step The third resist pattern is used as a mask to etch away the light shielding film and the etching stopper film, and further, the semi-transmissive film is etched and thinned to form the second semi-transmissive portion; and the third resist is formed a step of peeling off the pattern of the agent; and the third drawing pattern is configured to reduce a size corresponding to the light-transmitting portion by a specific size to a portion corresponding to the light-transmitting portion.

本發明之構成8係一種光罩之製造方法，該光罩係於透明基板上具備包含透光部及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1 描繪圖案並進行顯影，而去除與上述透光部及上述半透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除上述遮光膜及上述蝕刻終止膜，從而使上述半透光膜之表面露出；將上述第1抗蝕劑圖案剝離，且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案並進行顯影，而去除與上述透光部對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述半透光膜，從而形成上述透光部；將上述第2抗蝕劑圖案剝離，且重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案並進行顯影，而去除與上述透光部及上述半透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而對上述半透光膜進行蝕刻減膜，從而形成具有所需之曝光之光透過率之第1半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第2描繪圖案包含對與上述透光部對應之部分實施相對於上述透光部之設計尺寸增大特定量尺寸之加尺寸者，上述第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者，並且係對與上述第1半透光部對應之部分實施相對於上述第1半透光部之設計尺寸增大特定量尺寸之加尺寸者。 According to a sixth aspect of the present invention, in a method of manufacturing a photomask, the photomask includes a transfer pattern including a light transmitting portion and a semi-transmissive portion having a desired light transmittance of exposure, and the photomask is provided on the transparent substrate. The manufacturing method includes the steps of: preparing a photomask substrate having a semi-transmissive film, an etching stopper film, and a light-shielding film on the transparent substrate and applying the first resist film on the laminate; a resist pattern forming step by drawing the first resist film first The first resist film is removed by drawing a pattern and developing the portion corresponding to the light transmitting portion and the semi-transmissive portion, and the first patterning step is performed by using the first resist pattern as a mask. Etching and removing the light-shielding film and the etching stopper film to expose the surface of the semi-transmissive film; peeling off the first resist pattern and recoating the second resist film; and second resist a pattern forming step of removing a second resist film corresponding to the light transmitting portion by drawing the second drawing pattern on the second resist film and performing development; and a second patterning step Etching and removing the semi-transmissive film as a mask to form the light-transmitting portion; peeling the second resist pattern and recoating the third resist film; a third resist pattern forming step of removing the third resist corresponding to the light transmitting portion and the semi-transmissive portion by drawing the third drawing pattern on the third resist film and developing the third resist pattern a film of the third patterning step of the third resist a pattern as a mask for etching and thinning the semi-transmissive film to form a first semi-transmissive portion having a desired light transmittance of exposure; and a step of peeling off the third resist pattern; The second drawing pattern includes a portion for which a portion corresponding to the light transmitting portion is increased by a specific size with respect to a design size of the light transmitting portion, and the third drawing pattern is applied to a portion corresponding to the light transmitting portion. The size of the light-transmitting portion is reduced by a specific size, and the portion corresponding to the first semi-transmissive portion is increased by a specific amount with respect to the design size of the first semi-transmissive portion. Size plus size.

本發明之構成9係一種光罩之製造方法，該光罩係於透明基板上具備包含透光部、具有所需之曝光之光透過率之第1半透光部及具有 與該第1半透光部不同之所需之曝光之光透過率之第2半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1描繪圖案並進行顯影，而去除與上述透光部、上述第1半透光部及上述第2半透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除與上述透光部、上述第1半透光部及上述第2半透光部對應之部分之上述遮光膜及上述蝕刻終止膜，從而使上述半透光膜之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案並進行顯影，而去除與上述透光部對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述半透光膜，從而形成上述透光部；將上述第2抗蝕劑圖案剝離且重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案並進行顯影，而去除與上述透光部及上述第1半透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而對與上述第1半透光部對應之部分之上述半透光膜進行蝕刻減膜，從而形成上述第1半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第2描繪圖案包含對與上述透光部對應之部分實施相對於上述透光部之設計尺寸增大特定量尺寸之加尺寸者， 上述第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者，並且係對與上述第1半透光部對應之部分實施相對於上述第1半透光部之設計尺寸增大特定量尺寸之加尺寸者。 The ninth aspect of the present invention is a method of manufacturing a reticle comprising a first semi-transmissive portion including a light-transmitting portion and having a desired light transmittance of light, and having a light-receiving portion a pattern for transfer of a second semi-transmissive portion having a light transmittance of exposure required to be different from the first semi-transmissive portion, and the method of manufacturing the method comprising: preparing a layer on the transparent substrate a step of applying a photomask substrate of a first resist film to the laminate, a light-transmissive film, an etching stopper film, and a light-shielding film; and a first resist pattern forming step by using the first resist The first resist pattern is formed by drawing the first drawing pattern on the film, and removing the first resist film corresponding to the light transmitting portion, the first semi-transmissive portion, and the second semi-transmissive portion; the first patterning step The light-shielding film and the etching stopper film which are portions of the first light-receiving portion, the first semi-transmissive portion, and the second semi-transmissive portion are removed by etching the first resist pattern as a mask And exposing the surface of the semi-transmissive film; removing the first resist pattern and recoating the second resist film; and forming a second resist pattern by the second The resist film traces the second drawing pattern and develops it, and removes the pair of the light transmitting portions a second resist film; a second patterning step of etching and removing the semi-transmissive film by using the second resist pattern as a mask to form the light transmitting portion; and the second resist a step of peeling off and etching the third resist film; and a third resist pattern forming step of removing the third resist pattern by the third resist film and performing development a third resist film corresponding to a portion corresponding to the first semi-transmissive portion; and a third patterning step of applying the third resist pattern as a mask to the first semi-transparent light The semi-transmissive film corresponding to the portion is etched and thinned to form the first semi-transmissive portion; and the step of peeling off the third resist pattern; and the second drawing pattern includes the pair and the light transmissive The portion corresponding to the portion is increased in size by a specific size relative to the design size of the light transmitting portion, The third drawing pattern is configured such that a portion corresponding to the light transmitting portion is reduced by a specific size with respect to a design size of the light transmitting portion, and a portion corresponding to the first semi-light transmitting portion is implemented. The size of the specific size is increased with respect to the design size of the first semi-transmissive portion.

本發明之構成10係如構成1至9中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案包含由上述遮光部包圍之上述透光部。 The method of manufacturing a photomask according to any one of the first to eighth aspects of the present invention, characterized in that the transfer pattern includes the light transmitting portion surrounded by the light shielding portion.

本發明之構成11係如構成2至10中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案包含由上述半透光部包圍之上述透光部。 The method of manufacturing a photomask according to any one of the items 2 to 10, wherein the transfer pattern includes the light transmitting portion surrounded by the semi-transmissive portion.

本發明之構成12係如構成2至11中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案之半透光部包含第1半透光部、及曝光之光透過率高於上述第1半透光部之第2半透光部，且上述轉印用圖案包含由上述1半透光部包圍之上述第2半透光部。 The method of manufacturing a photomask according to any one of 2 to 11, wherein the semi-transmissive portion of the transfer pattern includes a first semi-transmissive portion and an exposed light transmittance The second semi-transmissive portion is higher than the first semi-transmissive portion, and the transfer pattern includes the second semi-transmissive portion surrounded by the one semi-transmissive portion.

本發明之構成13係一種顯示裝置之製造方法，其特徵在於包括如下步驟：準備藉由如構成1至12中任一項之構成而製造之光罩；及使用上述準備之光罩及曝光裝置，於被轉印體上轉印上述轉印用圖案。 The present invention is directed to a method of manufacturing a display device, comprising the steps of: preparing a photomask manufactured by the constitution of any one of 1 to 12; and using the prepared photomask and exposure apparatus The transfer pattern is transferred onto the transfer target.

根據本發明，可對藉由一次成膜而形成之光學膜正確地實施所需量之減膜。 According to the present invention, the desired amount of film can be correctly applied to the optical film formed by one film formation.

1‧‧‧光罩基板 1‧‧‧Photomask substrate

10‧‧‧透明基板 10‧‧‧Transparent substrate

20‧‧‧半透光膜 20‧‧‧ Semi-transparent film

30‧‧‧蝕刻終止膜 30‧‧‧etch stop film

40‧‧‧遮光膜 40‧‧‧Shade film

50‧‧‧抗蝕劑膜 50‧‧‧resist film

50'‧‧‧抗蝕劑膜 50'‧‧‧Resist film

50"‧‧‧抗蝕劑膜 50"‧‧‧Resist film

60‧‧‧光學膜 60‧‧‧Optical film

E‧‧‧邊緣 E‧‧‧ edge

S‧‧‧位置偏移 S‧‧‧ position offset

W1‧‧‧透明基板之露出部分 The exposed part of the W1‧‧ transparent substrate

W1a‧‧‧透明基板10之露出部分之設計尺寸 Design dimensions of the exposed portion of the W1a‧‧ transparent substrate 10

W2‧‧‧透明基板10之露出部分 The exposed portion of the W2‧‧ transparent substrate 10

W2a‧‧‧透明基板10之露出部分之尺寸 Dimensions of the exposed portion of the W2a‧‧ transparent substrate 10

W3‧‧‧透明基板10之露出部分 W3‧‧‧ exposed part of transparent substrate 10

W3a‧‧‧透明基板10之露出部分之尺寸 Dimensions of the exposed portion of the W3a‧‧ transparent substrate 10

X1‧‧‧邊緣 Edge of X1‧‧

X2‧‧‧邊緣 X2‧‧‧ edge

圖1(a)~(g)係用以說明關於用以獲得特定之曝光之光透過率之光罩之製造方法之第1參考例之說明圖。 1(a) to 1(g) are explanatory views for explaining a first reference example of a method of manufacturing a photomask for obtaining a specific light transmittance of exposure.

圖2(a)~(g)係用以說明關於用以獲得特定之曝光之光透過率之光罩之製造方法之第2參考例之說明圖。 2(a) to 2(g) are explanatory views for explaining a second reference example of a method of manufacturing a photomask for obtaining a specific exposure light transmittance.

圖3(a)~(h)係用以說明本發明之光罩之製造方法之第1實施形態之說明圖。 3(a) to 3(h) are explanatory views for explaining a first embodiment of a method of manufacturing a photomask according to the present invention.

圖4(a)~(n)係用以說明本發明之光罩之製造方法之第2實施形態之說明圖。 4(a) to 4(n) are explanatory views for explaining a second embodiment of the method of manufacturing the photomask of the present invention.

圖5(a)~(o)係用以說明本發明之光罩之製造方法之第3實施形態之說明圖。 5(a) to 5(o) are explanatory views for explaining a third embodiment of the method of manufacturing a photomask according to the present invention.

圖6(a)~(n)係用以說明本發明之光罩之製造方法之第4實施形態之說明圖。 6(a) to 6(n) are explanatory views for explaining a fourth embodiment of the method of manufacturing the photomask of the present invention.

圖7(a)~(o)係用以說明本發明之光罩之製造方法之第5實施形態之說明圖。 7(a) to 7(o) are explanatory views for explaining a fifth embodiment of the method of manufacturing a photomask according to the present invention.

圖8(a)~(k)係用以說明本發明之光罩之製造方法之第6實施形態之說明圖。 8(a) to 8(k) are explanatory views for explaining a sixth embodiment of the method of manufacturing a photomask according to the present invention.

圖9(a)~(m)係用以說明本發明之光罩之製造方法之第7實施形態之說明圖。 9(a) to 9(m) are explanatory views for explaining a seventh embodiment of the method of manufacturing a photomask according to the present invention.

圖10(a)~(c)係用以對藉由本發明之光罩之製造方法製作之轉印用圖案之構成進行說明之說明圖。 10(a) to 10(c) are explanatory views for explaining the configuration of a transfer pattern produced by the method for producing a photomask of the present invention.

參照圖1及圖2所示之參考例說明對光罩之光學膜進行減膜而獲得所需之曝光之光透過率(相對於曝光之光之光透過率)之方法。 A method of reducing the optical film of the photomask to obtain a desired light transmittance (relative to the light transmittance of the exposed light) will be described with reference to the reference examples shown in FIGS. 1 and 2.

再者，於本申請案中，所謂減膜係使成為對象之膜於厚度方向消失一部分，而減小其膜厚。而且，藉由僅對成為對象之膜之特定之區域進行減膜，可調整該部分之光透過率。 Further, in the present application, the film-reduction film causes the film to be applied to partially disappear in the thickness direction, and the film thickness is reduced. Further, by reducing the film only to a specific region of the film to be the target, the light transmittance of the portion can be adjusted.

圖1係用以說明形成具備透光部、遮光部、半透光部之多階光罩之轉印用圖案之步驟之第1參考例之說明圖。 FIG. 1 is an explanatory view for explaining a first reference example of a step of forming a transfer pattern of a multi-step mask including a light transmitting portion, a light blocking portion, and a semi-light transmitting portion.

首先，準備於透明基板10上依序積層有半透光膜20、蝕刻終止膜30、及遮光膜40且於表面塗佈形成有抗蝕劑膜50之光罩基板1(圖 1(a))。 First, the semi-transmissive film 20, the etching stopper film 30, and the light shielding film 40 are sequentially laminated on the transparent substrate 10, and the mask substrate 1 on which the resist film 50 is formed is applied on the surface (Fig. 1(a)).

本申請案中所謂抗蝕劑係指包含光阻劑、或電子束抗蝕劑之微影法用抗蝕劑。於以下之說明中，作為抗蝕劑，係以正型之光阻劑為例進行說明。 The term "resist" as used in the present application refers to a resist for a lithography method comprising a photoresist or an electron beam resist. In the following description, a positive resist is used as a resist as an example.

此處，圖1(a)所示之光罩基板1係光罩基底。但是，於本申請案中，作為光罩基板，除光罩基底以外，亦可為已經完成特定之圖案化且用以經由實施進一步之成膜、及/或圖案化而製成光罩之光罩中間物。 Here, the mask substrate 1 shown in FIG. 1(a) is a mask substrate. However, in the present application, as the photomask substrate, in addition to the mask substrate, light that has been specifically patterned and used to form a mask by performing further film formation and/or patterning may be used. Cover the middle.

其次，使用描繪裝置描繪用以形成半透光部之特定之描繪圖案。作為描繪裝置，可列舉EB(Electron Beam，電子束)描繪裝置、雷射描繪裝置，但對於顯示裝置製造用光罩，較佳的是使用雷射描繪裝置。藉由顯影而形成抗蝕劑圖案之後，將該抗蝕劑圖案用作蝕刻遮罩，而去除露出之遮光膜40、蝕刻終止膜30(圖1(b))。此處，作為遮光膜40例示含有Cr之膜，作為蝕刻終止膜30例示含有Si之膜。又，於進行蝕刻之步驟中，均使用濕式蝕刻劑(蝕刻液)。 Next, a specific drawing pattern for forming a semi-transmissive portion is drawn using a drawing device. The EB (Electron Beam) drawing device and the laser drawing device are exemplified as the drawing device. However, it is preferable to use a laser drawing device for the photomask for manufacturing the display device. After the resist pattern is formed by development, the resist pattern is used as an etching mask, and the exposed light shielding film 40 and the etching stopper film 30 are removed (FIG. 1(b)). Here, a film containing Cr is exemplified as the light shielding film 40, and a film containing Si is exemplified as the etching stopper film 30. Further, a wet etchant (etching solution) is used in the etching step.

進而，對露出之半透光膜20實施減膜處理使膜厚減少而獲得所需之膜厚(圖1(c))。該所需之膜厚係預先基於欲獲得之所需之曝光之光透過率、及源自該半透光膜之素材或膜質之光透過特性而計算者。即，預先求出取決於該光透過特性、及特定之蝕刻劑(蝕刻劑)之蝕刻速率，藉此，可預先掌握必需之蝕刻時間。 Further, the exposed semi-transmissive film 20 is subjected to a film-reduction treatment to reduce the film thickness to obtain a desired film thickness (Fig. 1 (c)). The required film thickness is calculated in advance based on the light transmittance of the desired exposure to be obtained and the light transmission characteristics of the material or film quality derived from the semi-transmissive film. That is, the etching rate depending on the light transmission characteristics and the specific etchant (etching agent) can be determined in advance, whereby the necessary etching time can be grasped in advance.

於圖1(c)所示之減膜處理後將抗蝕劑圖案(抗蝕劑膜50)剝離(圖1(d))。 The resist pattern (resist film 50) is peeled off after the film-reduction process shown in FIG. 1(c) (FIG. 1(d)).

進而於表面塗佈第2抗蝕劑膜50'，於此描繪用以形成透光部之第2描繪圖案且進行顯影，藉此形成第2抗蝕劑圖案(圖1(e))。 Further, the second resist film 50' is applied to the surface, and the second drawing pattern for forming the light transmitting portion is drawn and developed, thereby forming a second resist pattern (Fig. 1(e)).

然後，將第2抗蝕劑圖案用作蝕刻遮罩，依序蝕刻去除遮光膜40、蝕刻終止膜30、半透光膜20(圖1(f))。藉此，透明基板10之表面 露出，而形成透光部。 Then, the second resist pattern is used as an etching mask, and the light shielding film 40, the etching stopper film 30, and the semi-transmissive film 20 are sequentially removed by etching (FIG. 1(f)). Thereby, the surface of the transparent substrate 10 Exposed to form a light transmitting portion.

最後，若將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離，則多階光罩完成(圖1(g))。 Finally, when the second resist pattern (second resist film 50') is peeled off, the multi-step mask is completed (Fig. 1 (g)).

此處，若調整實施圖1(c)所示之蝕刻減膜之時間，則可自同一光罩基底製造具有各種曝光之光透過率之多階光罩。因此，具有無需準備多種光罩基底而可根據光罩使用者之希望選擇使所欲獲得之多階光罩具有之曝光之光透過率之自由度。 Here, if the time for performing the etching reduction film shown in FIG. 1(c) is adjusted, a multi-step mask having various light transmittances of exposure can be manufactured from the same mask substrate. Therefore, there is no need to prepare a plurality of reticle substrates, and the degree of freedom of light transmittance of the desired multi-step reticle can be selected according to the desire of the reticle user.

然而，用以獲得所需之曝光之光透過率之蝕刻終點僅根據預先掌握之蝕刻速率設定，無確認蝕刻終點之機構。即，無法使因蝕刻液之略微之濃度變動或溫度導致之蝕刻速率之變動反映於準確之蝕刻終點之設定。因此，於蝕刻減膜之中途，若可測定半透光膜20之光透過率且求出至蝕刻終點為止之所需時間，則較有用。 However, the etching end point for obtaining the desired light transmittance of the exposure is set only based on the pre-established etching rate, and there is no mechanism for confirming the etching end point. That is, it is impossible to reflect the fluctuation of the etching rate due to a slight concentration fluctuation of the etching liquid or the temperature to the setting of the accurate etching end point. Therefore, it is useful to measure the light transmittance of the semi-transmissive film 20 and obtain the time required until the end of etching in the middle of etching and film-reduction.

為了掌握光罩之半透光部具有之曝光之光透過率，可利用光學式之透過率測定器進行。該測定器於以透明基板之光透過率為基準(透過率100%)時，可表示作為測定對象之半透光部所具有之光透過率值。因此，於測定光罩之半透光部之光透過率時，對於同一樣品(光罩基板)之透光部亦測定光透過率，且將其作為參考值使用較合理。於測定時使用之檢查光係與實際之曝光中使用之曝光之光所用者實質上相同之波長(或波長區域)之光，或者可使用該曝光之光所包含之代表波長之光。根據光透過率之測定結果可掌握實際之曝光之光透過率。 In order to grasp the light transmittance of the exposure of the semi-transmissive portion of the mask, an optical transmittance detector can be used. The measuring device can indicate the light transmittance value of the semi-transmissive portion to be measured, based on the light transmittance of the transparent substrate (transmittance: 100%). Therefore, when measuring the light transmittance of the semi-transmissive portion of the reticle, the light transmittance is also measured for the light-transmitting portion of the same sample (mask substrate), and it is reasonable to use it as a reference value. The light used in the measurement is substantially the same wavelength (or wavelength region) as that used for the exposure light used in the actual exposure, or light of a representative wavelength included in the exposed light may be used. According to the measurement result of the light transmittance, the light transmittance of the actual exposure can be grasped.

然而，於第1參考例中，於蝕刻減膜之步驟中無法參照透明基板10之光透過率。 However, in the first reference example, the light transmittance of the transparent substrate 10 cannot be referred to in the step of etching the film.

因此，如第2參考例般，一面參照圖2一面對於蝕刻減膜之步驟中可參照透明基板之光透過率之步驟進行研究。 Therefore, as in the second reference example, the step of referring to FIG. 2 for the light transmittance of the transparent substrate in the step of etching and thinning can be studied.

於第2參考例中，準備與圖1(a)同樣之光罩基板1(光罩基底)之 後，使用用以形成透光部之描繪圖案描繪於抗蝕劑膜50(圖2(a))。對該抗蝕劑膜50進行顯影而形成抗蝕劑圖案之後將該抗蝕劑圖案作為蝕刻遮罩而依序蝕刻去除露出之遮光膜40、蝕刻終止膜30、半透光膜20。 In the second reference example, the same mask substrate 1 (mask base) as in Fig. 1(a) is prepared. Thereafter, the resist film 50 is drawn using a drawing pattern for forming a light transmitting portion (Fig. 2(a)). After the resist film 50 is developed to form a resist pattern, the resist pattern is used as an etching mask to sequentially remove the exposed light shielding film 40, the etching stopper film 30, and the semi-transmissive film 20.

繼而，將抗蝕劑圖案(抗蝕劑膜50)剝離(圖2(b))，而塗佈第2抗蝕劑膜50'(圖2(c))。 Then, the resist pattern (resist film 50) is peeled off (FIG. 2(b)), and the second resist film 50' is applied (FIG. 2(c)).

然後，使用用以形成半透光部並且使與透光部對應之部分之透明基板10露出之描繪圖案進行描繪，且進行顯影而形成第2抗蝕劑圖案(圖2(d))。 Then, a drawing pattern for forming a semi-transmissive portion and exposing a portion of the transparent substrate 10 corresponding to the light-transmitting portion is drawn, and development is performed to form a second resist pattern (FIG. 2(d)).

將該第2抗蝕劑圖案作為遮罩蝕刻去除遮光膜40及蝕刻終止膜30(圖2(e))。進而，對半透光膜20進行所需量之蝕刻減膜(圖2(f))。此時，由於透光部之一部分露出，故而可一面測定且參照透明基板10之光透過率，一面調整並確認用以形成半透光部之蝕刻減膜量。 The second resist pattern is used as a mask to remove the light shielding film 40 and the etching stopper film 30 (FIG. 2(e)). Further, the semi-transmissive film 20 is subjected to a desired amount of etching film reduction (Fig. 2(f)). At this time, since one of the light transmitting portions is partially exposed, the amount of etching reduction for forming the semi-transmissive portion can be adjusted and confirmed while referring to the light transmittance of the transparent substrate 10.

但是，於第2參考例中，難以確實地使上述進行之2次描繪步驟之相互之位置偏移S(參照圖2(d))為零。因此，自第2抗蝕劑圖案露出之透光部之位置與自第1抗蝕劑圖案露出之透光部之位置產生位置偏移，而會損傷與透光部鄰接之遮光膜之邊緣，因此，產生如下風險，即，作為使較對透光部設定之光量更大之光量透過之部分發揮功能(產生如透光部變得大於設計尺寸之結果)。 However, in the second reference example, it is difficult to surely shift the positional shift S (see FIG. 2(d)) of the two drawing steps performed as described above to zero. Therefore, the position of the light transmitting portion exposed from the second resist pattern is displaced from the position of the light transmitting portion exposed from the first resist pattern, and the edge of the light shielding film adjacent to the light transmitting portion is damaged. Therefore, there is a risk that a portion that transmits a light amount larger than the amount of light set for the light transmitting portion functions (resulting in a result that the light transmitting portion becomes larger than the design size).

本發明者對抑制此種問題之產生並且正確地控制光學膜之減膜進行銳意研究。 The present inventors conducted intensive studies to suppress the occurrence of such a problem and to properly control the film reduction of the optical film.

以下，使用圖3~圖10對本發明之光罩之製造方法之各實施形態進行說明。 Hereinafter, each embodiment of the method of manufacturing the photomask of the present invention will be described with reference to Figs. 3 to 10 .

[第1實施形態] [First Embodiment]

圖3係用以說明本發明之光罩之製造方法之第1實施形態之說明圖。 Fig. 3 is an explanatory view for explaining a first embodiment of a method of manufacturing a photomask according to the present invention.

步驟1：如圖3(a)所示，準備於透明基板10上形成有光學膜60，且進而於表面形成有第1抗蝕劑膜50之光罩基板1。此處，光罩基板1係光罩基底，但作為光罩基板，亦可為已經進行一部分圖案化者。 Step 1: As shown in FIG. 3(a), the optical film 60 is formed on the transparent substrate 10, and the mask substrate 1 on which the first resist film 50 is formed is further formed. Here, the mask substrate 1 is a mask base, but it may be a part of the pattern that has been patterned as a mask substrate.

再者，光罩基板1中之第1抗蝕劑膜50可直接形成於光學膜60之表面，於不妨礙本發明之作用效果之範圍內，亦可於第1抗蝕劑膜50與光學膜60之間介置其他膜。作為光學膜60，可為遮光膜，可為半透光膜，亦可具有使曝光之光之相位偏移特定量(相位偏移膜)等功能。又，於光學膜60之表面部分亦可具有抑制光之反射之抗反射層。又，光學膜60亦可積層有複數層膜。例如，於圖3中，例示光學膜60為遮光膜之情形。 Further, the first resist film 50 in the mask substrate 1 can be directly formed on the surface of the optical film 60, and can be applied to the first resist film 50 and the optical layer within a range that does not impair the effects of the present invention. Other films are interposed between the membranes 60. The optical film 60 may be a light-shielding film, may be a semi-transmissive film, or may have a function of shifting the phase of the exposed light by a specific amount (phase shift film). Further, the surface portion of the optical film 60 may have an antireflection layer that suppresses reflection of light. Further, the optical film 60 may be laminated with a plurality of layers. For example, in FIG. 3, the case where the optical film 60 is a light-shielding film is illustrated.

光學膜60之成膜可使用濺鍍法等公知之成膜方法進行。 The film formation of the optical film 60 can be performed by a well-known film formation method, such as a sputtering method.

膜素材並無特別制約。此處例示遮光膜，但作為遮光膜素材例如可列舉以Cr為主成分之遮光膜。較佳為於膜之表面部分具有Cr氧化物等抗反射層。 The film material is not particularly limited. Although the light-shielding film is exemplified here, as a light-shielding film material, the light-shielding film which has Cr as a main component is mentioned, for example. It is preferred to have an antireflection layer such as a Cr oxide on the surface portion of the film.

步驟2：使用描繪裝置描繪用以形成透光部之描繪圖案(第1描繪圖案)。於描繪後，進行第1顯影而形成第1抗蝕劑圖案(圖3(b))。此處，作為抗蝕劑使用正型之光阻劑，因此，將描繪部分之抗蝕劑去除。 Step 2: A drawing pattern (first drawing pattern) for forming a light transmitting portion is drawn using a drawing device. After the drawing, the first development is performed to form a first resist pattern (Fig. 3(b)). Here, since a positive type photoresist is used as the resist, the resist of the drawing portion is removed.

步驟3：將步驟1中形成之第1抗蝕劑圖案作為蝕刻遮罩蝕刻去除光學膜60(遮光膜)(圖3(c))。此處，使用公知之蝕刻液進行濕式蝕刻。藉此，劃定透光部(第1圖案化步驟)。 Step 3: The optical film 60 (light-shielding film) is removed by etching the first resist pattern formed in the step 1 as an etching mask (Fig. 3(c)). Here, wet etching is performed using a known etching solution. Thereby, the light transmitting portion is defined (first patterning step).

步驟4：將第1抗蝕劑圖案(抗蝕劑膜50)剝離去除(圖3(d))。 Step 4: The first resist pattern (resist film 50) is peeled off (Fig. 3(d)).

步驟5：重新將第2抗蝕劑膜50'塗佈形成於表面(圖3(e))。 Step 5: The second resist film 50' is again coated on the surface (Fig. 3(e)).

步驟6：再次使用描繪裝置描繪第2描繪圖案，且進行第2顯影。藉此，去除與透光部對應之部分、及與半透光部對應之部分之第2抗蝕劑膜50'，而形成透明基板10之表面之一部分及光學膜60之表面之 一部分分別露出之第2抗蝕劑圖案(圖3(f))。再者，以此處之透明基板10之露出部分W2小於第1抗蝕劑圖案中之透明基板之露出部分W1之方式將第2描繪圖案之資料確定尺寸。換言之，第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。藉此，即便於第1描繪圖案與第2描繪圖案之間相互產生位置偏移，於步驟2中形成之與透光部鄰接之遮光部中之光學膜60之邊緣E(參照圖3(c))亦不會自第2抗蝕劑圖案露出。 Step 6: The second drawing pattern is drawn again using the drawing device, and the second development is performed. Thereby, the portion corresponding to the light transmitting portion and the second resist film 50' corresponding to the semi-transmissive portion are removed, and a part of the surface of the transparent substrate 10 and the surface of the optical film 60 are formed. A part of the second resist pattern is exposed (Fig. 3(f)). Further, the data of the second drawing pattern is sized so that the exposed portion W2 of the transparent substrate 10 is smaller than the exposed portion W1 of the transparent substrate in the first resist pattern. In other words, in the second drawing pattern, the portion corresponding to the light transmitting portion is reduced in size by a specific size with respect to the design size of the light transmitting portion. Thereby, even if a positional shift occurs between the first drawing pattern and the second drawing pattern, the edge E of the optical film 60 in the light shielding portion adjacent to the light transmitting portion formed in the step 2 (refer to FIG. 3 (c) ))) is not exposed from the second resist pattern.

步驟7：將該第2抗蝕劑圖案作為遮罩對露出之部分之光學膜60進行蝕刻減膜(第2圖案化步驟)。藉此，形成具有所需之曝光之光透過率之半透光部(圖3(g))。對光學膜進行蝕刻減膜時之蝕刻速度以曝光之光之透過率變化量計較佳為設為0.3~5.0%/min。即，藉由設定與將光學膜之特定部分蝕刻去除之情形之速度相比足夠慢之條件，容易正確地進行所意圖之透過率之增加。再者，於第2~第7實施形態中，蝕刻減膜時之蝕刻速度亦較佳為同樣地設定。 Step 7: The second resist pattern is used as a mask to etch and reduce the exposed portion of the optical film 60 (second patterning step). Thereby, a semi-transmissive portion having a desired light transmittance of exposure is formed (Fig. 3(g)). The etching rate at the time of etching and thinning the optical film is preferably set to 0.3 to 5.0%/min in terms of the change in transmittance of the exposed light. That is, it is easy to accurately perform the desired increase in transmittance by setting a condition that is sufficiently slow compared to the case where the specific portion of the optical film is etched and removed. Further, in the second to seventh embodiments, the etching rate at the time of etching and film-reducing is also preferably set in the same manner.

此時，如上述般與透光部鄰接之遮光部之邊緣由第2抗蝕劑圖案被覆，因此，不會受到損傷，結果，於圖3(c)中劃定之透光部之尺寸不會產生錯誤。 At this time, since the edge of the light-shielding portion adjacent to the light-transmitting portion is covered by the second resist pattern as described above, it is not damaged, and as a result, the size of the light-transmitting portion defined in FIG. 3(c) is not Will produce an error.

又，由於與透光部對應之部分之透明基板10露出，故而於蝕刻減膜之前，或於蝕刻減膜中途，可測定藉由第1圖案化步驟而露出之透明基板10之光透過率。因此，可將透明基板10之光透過率作為參考測定蝕刻減膜前之光透過率、或蝕刻減膜中途之光透過率，而精密地預想蝕刻減膜之終點。當然，於結束特定時間之蝕刻減膜之階段，亦可確認是否獲得所需之光透過率。 Further, since the portion of the transparent substrate 10 corresponding to the light transmitting portion is exposed, the light transmittance of the transparent substrate 10 exposed by the first patterning step can be measured before the etching film is removed or in the middle of the etching film reduction. Therefore, the light transmittance of the transparent substrate 10 can be measured as a reference, and the light transmittance before the film is reduced or the light transmittance in the middle of the film can be reduced, and the end point of the film can be accurately expected. Of course, it is also confirmed whether or not the desired light transmittance is obtained at the stage of etching the film at a specific time.

步驟8：將第2抗蝕劑圖案剝離，而完成具有透光部、遮光部、半透光部之3階之光罩(圖3(h))。 Step 8: The second resist pattern is peeled off, and a third-order photomask having a light transmitting portion, a light blocking portion, and a semi-light transmitting portion is completed (FIG. 3(h)).

再者，於第1實施形態中，作為光學膜60例示有單層之遮光膜， 但本發明並不限定於此種構成。於以下所示之實施形態中，對光學膜為積層構造之情形進行說明。 Further, in the first embodiment, a single layer of light shielding film is exemplified as the optical film 60. However, the present invention is not limited to such a configuration. In the embodiment shown below, a case where the optical film has a laminated structure will be described.

[第2實施形態] [Second Embodiment]

其次，參照圖4，對本發明之第2實施形態進行說明。 Next, a second embodiment of the present invention will be described with reference to Fig. 4 .

圖4所示之光罩之製造方法係例示多階光罩之製造方法，該多階光罩係應用了包含半透光膜20、蝕刻終止膜30、遮光膜40之積層作為形成於透明基板10上之光學膜。 The manufacturing method of the reticle shown in FIG. 4 exemplifies a method of manufacturing a multi-step reticle using a laminate including a semi-transmissive film 20, an etch-stop film 30, and a light-shielding film 40 as a transparent substrate. 10 optical film.

步驟1：準備於透明基板10上具備包含半透光膜20、蝕刻終止膜30、遮光膜40之積層之光學膜進而於表面上形成有第1抗蝕劑膜50之光罩基板1(圖4(a))。半透光膜20係具有使曝光之光之一部分透過之特定之曝光之光透過率之膜，於本實施形態中，例如曝光之光透過率為50~60%。 Step 1: Prepare the optical substrate including the semi-transmissive film 20, the etching stopper film 30, and the light-shielding film 40 on the transparent substrate 10, and further form the photomask substrate 1 on which the first resist film 50 is formed (Fig. 4(a)). The semi-transmissive film 20 is a film having a specific light transmittance for partially exposing the exposed light. In the present embodiment, for example, the light transmittance of the exposure is 50 to 60%.

又，遮光膜40及蝕刻終止膜30包含具有蝕刻選擇性，且對於彼此之蝕刻劑(此處，應用濕式蝕刻因此為蝕刻液)彼此具有蝕刻耐性之素材。又，對於半透光膜20及蝕刻終止膜30，亦包含對於彼此之蝕刻劑彼此具有耐性之素材。遮光膜40及半透光膜20可彼此具有蝕刻選擇性，亦可不具有蝕刻選擇性。因此，此處，遮光膜40及半透光膜20之素材設為均包含Cr之蝕刻特性共通者。 Further, the light shielding film 40 and the etching stopper film 30 contain materials having etching selectivity and etching resistance to each other (here, applying wet etching and thus etching liquid) to each other. Further, the semi-transmissive film 20 and the etching stopper film 30 also contain materials which are resistant to each other's etchants. The light shielding film 40 and the semi-transmissive film 20 may have an etching selectivity with each other or may have no etching selectivity. Therefore, here, the materials of the light shielding film 40 and the semi-transmissive film 20 are common to the etching characteristics including Cr.

步驟2：使用描繪裝置描繪用以形成透光部之描繪圖案(第1描繪圖案)。於描繪後，進行第1顯影而形成第1抗蝕劑圖案(圖4(b))。 Step 2: A drawing pattern (first drawing pattern) for forming a light transmitting portion is drawn using a drawing device. After the drawing, the first development is performed to form a first resist pattern (Fig. 4(b)).

步驟3：將於步驟2中形成之第1抗蝕劑圖案作為蝕刻遮罩而蝕刻去除遮光膜40(圖4(c))。 Step 3: The first resist pattern formed in the step 2 is used as an etching mask to etch away the light shielding film 40 (Fig. 4(c)).

步驟4：變更為蝕刻終止膜30用之蝕刻劑而蝕刻去除蝕刻終止膜30(圖4(d))。 Step 4: The etching stopper film 30 is etched and removed by changing the etching agent for the etching stopper film 30 (Fig. 4(d)).

步驟5：再次變更蝕刻劑，藉由半透光膜20用之蝕刻劑而蝕刻去除半透光膜20。其後，將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離(圖 4(e))。 Step 5: The etchant is changed again, and the semi-transmissive film 20 is removed by etching with the etchant for the semi-transmissive film 20. Thereafter, the first resist pattern (first resist film 50) is peeled off (Fig. 4(e)).

步驟6：重新於表面形成第2抗蝕劑膜50'(圖4(f))。 Step 6: The second resist film 50' is formed again on the surface (Fig. 4(f)).

步驟7：再次使用描繪裝置描繪第2描繪圖案，且進行第2顯影。藉此，去除與透光部對應之部分、及與半透光部(第1半透光部)對應之部分之第2抗蝕劑膜50'，而形成透明基板10之表面之一部分及遮光膜40之表面之一部分分別露出之第2抗蝕劑圖案(圖4(g))。 Step 7: The second drawing pattern is drawn again using the drawing device, and the second development is performed. Thereby, the portion corresponding to the light transmitting portion and the second resist film 50' corresponding to the semi-transmissive portion (first semi-transmissive portion) are removed, and a part of the surface of the transparent substrate 10 is formed and the light is blocked. The second resist pattern is exposed to one of the surfaces of the film 40 (Fig. 4(g)).

再者，以此處之透明基板10之露出部分W2小於第1抗蝕劑圖案中之透明基板10之露出部分W1之方式將第2描繪圖案之資料確定尺寸。換言之，第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。藉此，即便於第1描繪圖案與第2描繪圖案之間相互產生位置偏移，於步驟5中形成之與透光部鄰接之遮光部中之遮光膜40、蝕刻終止膜30及半透光膜20之邊緣E(參照圖4(e))亦不會自第2抗蝕劑圖案露出。 Further, the data of the second drawing pattern is sized so that the exposed portion W2 of the transparent substrate 10 is smaller than the exposed portion W1 of the transparent substrate 10 in the first resist pattern. In other words, in the second drawing pattern, the portion corresponding to the light transmitting portion is reduced in size by a specific size with respect to the design size of the light transmitting portion. Thereby, even if the first drawing pattern and the second drawing pattern are displaced from each other, the light shielding film 40, the etching stopper film 30, and the semi-transparent light in the light shielding portion adjacent to the light transmitting portion formed in the step 5 are formed. The edge E (see FIG. 4(e)) of the film 20 is also not exposed from the second resist pattern.

步驟8：將第2抗蝕劑圖案作為遮罩而蝕刻去除露出之部分之遮光膜40。進而，變更蝕刻劑而蝕刻去除蝕刻終止膜30(圖4(h))。 Step 8: etching the removed portion of the light-shielding film 40 by using the second resist pattern as a mask. Further, the etching stopper is removed by etching the etchant (Fig. 4(h)).

步驟9：繼而，變更蝕刻劑，對露出之半透光膜20進行蝕刻減膜(第2圖案化步驟)。藉此，形成具有所需之曝光之光透過率之半透光部(第1半透光部)(圖4(i))。 Step 9: Next, the etchant is changed, and the exposed semi-transmissive film 20 is etched and thinned (second patterning step). Thereby, a semi-transmissive portion (first semi-transmissive portion) having a desired light transmittance of exposure is formed (FIG. 4(i)).

此時，如上述般與透光部鄰接之遮光部之邊緣E(參照圖4(e))被第2抗蝕劑圖案被覆，因此，不會受到損傷，結果，於步驟5中劃定之透光部之尺寸不會產生錯誤。又，由於與透光部對應之部分之透明基板10露出，故而可進行透明基板10之光透過率之測定。因此，可將透明基板10之光透過率作為參考，測定蝕刻減膜前之光透過率、或蝕刻減膜中途之光透過率，而精密地預想蝕刻減膜之終點。當然，亦可確認於結束特定時間之蝕刻減膜之階段，獲得所需之光透過率。 At this time, as described above, the edge E (see FIG. 4(e)) of the light-shielding portion adjacent to the light-transmitting portion is covered by the second resist pattern, so that it is not damaged, and as a result, it is defined in step 5. The size of the light transmitting portion does not cause an error. Further, since the transparent substrate 10 corresponding to the light transmitting portion is exposed, the light transmittance of the transparent substrate 10 can be measured. Therefore, the light transmittance of the transparent substrate 10 can be used as a reference, and the light transmittance before the film is reduced or the light transmittance in the middle of the film can be measured, and the end point of the film can be accurately predicted. Of course, it is also confirmed that the desired light transmittance is obtained at the stage of etching and film-reduction at a specific time.

步驟10：將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離，而完成具有透 光部、遮光部、半透光部之3階之光罩(圖4(j))。 Step 10: peeling off the second resist pattern (second resist film 50') to complete The third-order photomask of the light portion, the light-shielding portion, and the semi-transmissive portion (Fig. 4(j)).

再者，於製造除透光部、遮光部以外還具備曝光之光透過率彼此不同之2種半透光部(第1、第2半透光部)之轉印用圖案的4階之光罩之情形時，可對圖4(j)之光罩進而實施以下步驟。 In addition to the light-transmitting portion and the light-shielding portion, the fourth-order light of the transfer pattern of the two semi-transmissive portions (the first and second semi-transmissive portions) having different light transmittances after exposure is provided. In the case of a cover, the following steps can be carried out for the mask of Fig. 4(j).

步驟11：重新於表面形成第3抗蝕劑膜50"(圖4(k))。 Step 11: Forming a third resist film 50" on the surface (Fig. 4(k)).

步驟12：使用描繪裝置，描繪用以形成追加之半透光部(第2半透光部)之描繪圖案(第3描繪圖案)，且進行第3顯影，藉此形成第3抗蝕劑圖案(圖4(l))。 Step 12: Using a drawing device, drawing a drawing pattern (third drawing pattern) for forming an additional semi-transmissive portion (second semi-transmissive portion), and performing third development to form a third resist pattern (Fig. 4(l)).

步驟13：將第3抗蝕劑圖案作為遮罩，蝕刻去除遮光膜40及蝕刻終止膜30，而形成第2半透光部(圖4(m))。 Step 13: The third resist pattern is used as a mask, and the light shielding film 40 and the etching stopper film 30 are removed by etching to form a second semi-transmissive portion (Fig. 4(m)).

步驟14：將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離，而完成具備透光部、遮光部、第1半透光部及第2半透光部之4階之光罩(圖4(n))。 Step 14: peeling off the third resist pattern (third resist film 50"), and completing the fourth-order light including the light transmitting portion, the light blocking portion, the first semi-light transmitting portion, and the second semi-light transmitting portion Cover (Fig. 4(n)).

藉由以上步驟，可利用單一之半透光膜20形成複數個具有不同之曝光之光透過率之第1、第2半透光部。 By the above steps, the first semi-transmissive film 20 can be used to form a plurality of first and second semi-transmissive portions having different light transmittances of the exposure.

[第3實施形態] [Third embodiment]

其次，參照圖5對本發明之第3實施形態進行說明。第3實施形態係於上述第2實施形態之第2半透光部(參照圖4(n))中，進行與成膜時不同之用以獲得更高之曝光之光透過率之透過率調整者。 Next, a third embodiment of the present invention will be described with reference to Fig. 5 . According to the third embodiment, in the second semi-transmissive portion (see Fig. 4(n)) of the second embodiment, the transmittance is adjusted differently from that at the time of film formation to obtain a higher transmittance of light transmittance. By.

於圖5所示之第3實施形態之光罩之製造方法中，步驟1~步驟11(參照圖5(a)~(k))與第2實施形態中之步驟1~步驟11(參照圖4(a)~(k))同樣。即，準備光罩基板1(步驟1：圖5(a))，形成第1抗蝕劑圖案(步驟2：圖5(b))，蝕刻去除與透光部對應之部分之遮光膜40及蝕刻終止膜30之後(步驟3、4：圖5(c)、(d))，蝕刻去除半透光膜20(第1圖案化步驟)而將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離(步驟5：圖5(e))。 In the method of manufacturing the reticle according to the third embodiment shown in FIG. 5, steps 1 to 11 (see FIGS. 5(a) to 5(k)) and steps 1 to 11 in the second embodiment (see FIG. 4(a)~(k)) is the same. That is, the mask substrate 1 is prepared (Step 1: FIG. 5(a)), a first resist pattern is formed (Step 2: FIG. 5(b)), and the portion of the light-shielding film 40 corresponding to the light-transmitting portion is removed by etching. After etching the termination film 30 (steps 3 and 4: FIGS. 5(c) and (d)), the semi-transmissive film 20 is removed by etching (first patterning step), and the first resist pattern (first resist) is removed. The film 50) is peeled off (step 5: Fig. 5(e)).

然後，重新形成第2抗蝕劑膜50'(步驟6：圖5(f))，且形成第2抗蝕劑圖案(步驟7：圖5(g))，且蝕刻去除第1半透光部中之遮光膜40及蝕 刻終止膜30(步驟8：圖5(h))。進而，對半透光膜20進行蝕刻減膜之後(步驟9(第2圖案化步驟)：圖5(i))，將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離(步驟10：圖5(j))，於其表面形成第3抗蝕劑膜50"(步驟11：圖5(k))。 Then, the second resist film 50' is reformed (step 6: FIG. 5(f)), and a second resist pattern is formed (step 7: FIG. 5(g)), and the first semi-transparent is removed by etching. Light-shielding film 40 and eclipse The film 30 is stopped (step 8: Fig. 5(h)). Further, after the semi-transmissive film 20 is etched and thinned (step 9 (second patterning step): FIG. 5 (i)), the second resist pattern (second resist film 50') is peeled off ( Step 10: Fig. 5(j)), a third resist film 50" is formed on the surface thereof (Step 11: Fig. 5(k)).

步驟12：使用描繪裝置描繪第3描繪圖案且進行第3顯影。藉此，去除與透光部對應之部分、及與第2半透光部對應之部分之第3抗蝕劑膜50"，而形成透明基板10之表面之一部分及遮光膜40之表面之一部分分別露出之第3抗蝕劑圖案(圖5(l))。 Step 12: The third drawing pattern is drawn using the drawing device and the third development is performed. Thereby, the portion corresponding to the light transmitting portion and the third resist film 50" corresponding to the second semi-light transmitting portion are removed, and a part of the surface of the transparent substrate 10 and a part of the surface of the light shielding film 40 are formed. The third resist pattern is exposed (Fig. 5(l)).

再者，此處亦以透明基板10之露出部分W3小於第1抗蝕劑圖案中之透明基板10之露出部分W1之方式將第3描繪圖案之資料確定尺寸。換言之，第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。藉此，即便於第1描繪圖案與第3描繪圖案之間相互產生位置偏移，於步驟5中形成之與透光部鄰接之遮光部之邊緣E(參照圖5(e))亦不會自第2抗蝕劑圖案露出。 Here, the data of the third drawing pattern is also sized such that the exposed portion W3 of the transparent substrate 10 is smaller than the exposed portion W1 of the transparent substrate 10 in the first resist pattern. In other words, the third drawing pattern is a size reduction of a portion corresponding to the light transmitting portion by a specific size dimension with respect to the design size of the light transmitting portion. Therefore, even if a positional shift occurs between the first drawing pattern and the third drawing pattern, the edge E (see FIG. 5(e)) of the light blocking portion adjacent to the light transmitting portion formed in step 5 does not occur. The second resist pattern is exposed.

步驟13：將第3抗蝕劑圖案作為遮罩，蝕刻去除與第2半透光部對應之露出部分之遮光膜40。進而，變更蝕刻劑而蝕刻去除蝕刻終止膜30(圖5(m))。 Step 13: The third resist pattern is used as a mask, and the light-shielding film 40 of the exposed portion corresponding to the second semi-transmissive portion is removed by etching. Further, the etchant is changed to etch away the etching stopper film 30 (Fig. 5(m)).

步驟14：繼而，變更蝕刻劑而對露出之半透光膜20進行蝕刻減膜(第3圖案化步驟)。藉此，形成具有所需之曝光之光透過率之第2半透光部(圖5(n))。 Step 14: Next, the exposed etchant is changed to etch and reduce the exposed semi-transmissive film 20 (third patterning step). Thereby, the second semi-transmissive portion having the desired light transmittance of the exposure is formed (Fig. 5(n)).

此時，圖5(e)所示之與透光部鄰接之遮光部之邊緣E亦由第3抗蝕劑圖案被覆，因此，不會受到損傷，結果，於步驟5中劃定之透光部之尺寸不會產生錯誤。又，與步驟9(參照圖5(i))同樣地，由於與透光部對應之部分之透明基板10露出，故而於半透光膜20之蝕刻減膜時，可參照透明基板10之曝光之光透過率。 At this time, the edge E of the light shielding portion adjacent to the light transmitting portion shown in FIG. 5(e) is also covered by the third resist pattern, so that it is not damaged, and as a result, the light is defined in step 5. The size of the department does not produce errors. Further, similarly to the step 9 (see FIG. 5(i)), since the transparent substrate 10 corresponding to the light transmitting portion is exposed, the exposure of the transparent substrate 10 can be referred to when the semitransparent film 20 is etched and thinned. Light transmission rate.

步驟15：將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離，而完成具有透光部、遮光部、及曝光之光透過率彼此不同之第1、第2半透光部之4階之光罩(圖5(o))。 Step 15: The third resist pattern (third resist film 50") is peeled off, and the first and second semi-transmissive portions having the light transmitting portion, the light blocking portion, and the light transmittance of the exposure are different from each other. The fourth-order reticle (Fig. 5(o)).

藉由以上之步驟，可將與第2實施形態相同之光罩基板(光罩基底)作為起始材料並且製造曝光之光透過率之規格不同之4階光罩。 According to the above steps, the mask substrate (mask base) similar to that of the second embodiment can be used as a starting material, and a fourth-order mask having different specifications of the light transmittance of the exposure can be manufactured.

[第4實施形態] [Fourth embodiment]

其次，參照圖6對本發明之第4實施形態進行說明。 Next, a fourth embodiment of the present invention will be described with reference to Fig. 6 .

於第4實施形態中，準備與圖4(a)中說明者相同之光罩基板1(步驟1：圖6(a))，經由描繪及第1顯影而形成第1抗蝕劑圖案(步驟2：圖6(b))。繼而，蝕刻去除與透光部對應之部分之遮光膜40及蝕刻終止膜30之後(步驟3、4：圖6(c)、(d))，蝕刻去除半透光膜20且將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離(步驟5：圖6(e))。 In the fourth embodiment, the photomask substrate 1 similar to that described in FIG. 4(a) is prepared (step 1: FIG. 6(a)), and the first resist pattern is formed by drawing and first development (step 2: Figure 6(b)). Then, after the light-shielding film 40 and the etching stopper film 30 corresponding to the light-transmitting portion are removed by etching (steps 3 and 4: FIGS. 6(c) and (d)), the semi-transmissive film 20 is removed by etching and the first resist is removed. The etchant pattern (first resist film 50) is peeled off (step 5: Fig. 6(e)).

其次，重新於表面形成第2抗蝕劑膜50'(步驟6：圖6(f))，經由描繪及第2顯影而形成第2抗蝕劑圖案之後(步驟7：圖6(g))，蝕刻去除與第1半透光部對應之部分之遮光膜40及蝕刻終止膜30(步驟8：圖6(h))。 Next, the second resist film 50' is formed on the surface (step 6: FIG. 6(f)), and the second resist pattern is formed by drawing and second development (step 7: FIG. 6(g)). The portion of the light shielding film 40 and the etching stopper film 30 corresponding to the first semi-transmissive portion are removed by etching (step 8: FIG. 6(h)).

繼而，將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離之後(步驟9：圖6(i))，於其表面形成第3抗蝕劑膜50"(步驟10：圖6(j))，經由描繪及第3顯影而形成第3抗蝕劑圖案(步驟11：圖6(k))。以該第3抗蝕劑圖案中之透明基板10之露出部分W3小於第1抗蝕劑圖案中之透明基板10之露出部分W1之方式將第3描繪圖案之資料確定尺寸。 Then, after the second resist pattern (second resist film 50') is peeled off (step 9: FIG. 6(i)), a third resist film 50" is formed on the surface thereof (step 10: FIG. (j)) forming a third resist pattern by drawing and third development (step 11: FIG. 6(k)). The exposed portion W3 of the transparent substrate 10 in the third resist pattern is smaller than the first The material of the third drawing pattern is sized in such a manner that the exposed portion W1 of the transparent substrate 10 in the resist pattern.

繼而，蝕刻去除與第2半透光部對應之部分之遮光膜40及蝕刻終止膜30之後(步驟12：圖6(l))，對半透光膜20進行蝕刻減膜(步驟13：圖6(m))，且將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離(步驟14：圖6(n))。 Then, after the light-shielding film 40 and the etching stopper film 30 corresponding to the second semi-transmissive portion are removed by etching (step 12: FIG. 6(1)), the semi-transmissive film 20 is etched and thinned (step 13: 6(m)), and the third resist pattern (third resist film 50") is peeled off (step 14: FIG. 6(n)).

藉由以上步驟，完成具有透光部、遮光部、第1及第2半透光部 之4階之光罩。再者，第1半透光部具有未對半透光膜20進行蝕刻減膜之狀態之曝光之光透過率，第2半透光部具有高於第1半透光部之曝光之光透過率。 By the above steps, the light transmissive portion, the light shielding portion, and the first and second semi-transmissive portions are completed. The 4th order mask. Further, the first semi-transmissive portion has a light transmittance that is not exposed to the semi-transmissive film 20, and the second semi-transmissive portion has a higher light transmittance than the first semi-transmissive portion. rate.

[第5實施形態] [Fifth Embodiment]

其次，參照圖7對本發明之第5實施形態進行說明。 Next, a fifth embodiment of the present invention will be described with reference to Fig. 7 .

於第5實施形態中，準備與圖4(a)中所說明者相同之光罩基板1(步驟1：圖7(a))，經由描繪及第1顯影而形成第1抗蝕劑圖案(步驟2：圖7(b))。繼而，蝕刻去除與第1半透光部對應之部分之遮光膜40及蝕刻終止膜30(步驟3：圖7(c))。然後，將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離之後(步驟4：圖7(d))，重新於表面形成第2抗蝕劑膜50'(步驟5：圖7(e))，經由描繪及第2顯影而形成第2抗蝕劑圖案(步驟6：圖7(f))。 In the fifth embodiment, the same mask substrate 1 as that described in FIG. 4(a) is prepared (step 1: FIG. 7(a)), and the first resist pattern is formed by drawing and first development ( Step 2: Figure 7(b)). Then, the light shielding film 40 and the etching stopper film 30 corresponding to the first semi-light-transmitting portion are removed by etching (step 3: FIG. 7(c)). Then, after the first resist pattern (first resist film 50) is peeled off (step 4: FIG. 7(d)), the second resist film 50' is formed again on the surface (step 5: FIG. 7 ( e)) The second resist pattern is formed by drawing and second development (step 6: FIG. 7(f)).

繼而，蝕刻去除與透光部對應之部分之遮光膜40及蝕刻終止膜30之後(步驟7、8：圖6(g)、(h))，蝕刻去除半透光膜20(步驟9：圖7(i))。然後，將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離之後(步驟10：圖7(j))，於其表面形成第3抗蝕劑膜50"(步驟11：圖7(k))，經由描繪及第3顯影而形成第3抗蝕劑圖案(步驟12：圖7(l))。以該第3抗蝕劑圖案中之透明基板10之露出部分W3小於第1抗蝕劑圖案中之透明基板10之露出部分W1之方式將第3描繪圖案之資料確定尺寸。 Then, after the light-shielding film 40 and the etching stopper film 30 corresponding to the light-transmitting portion are removed by etching (steps 7 and 8: FIGS. 6(g) and (h)), the semi-transmissive film 20 is removed by etching (step 9: 7(i)). Then, after the second resist pattern (second resist film 50') is peeled off (step 10: FIG. 7(j)), a third resist film 50" is formed on the surface thereof (step 11: FIG. 7) (k)) forming a third resist pattern by drawing and third development (step 12: FIG. 7(l)). The exposed portion W3 of the transparent substrate 10 in the third resist pattern is smaller than the first The material of the third drawing pattern is sized in such a manner that the exposed portion W1 of the transparent substrate 10 in the resist pattern.

其次，蝕刻去除與第2半透光部對應之部分之遮光膜40及蝕刻終止膜30之後(步驟13：圖7(m))，對半透光膜20進行蝕刻減膜(步驟14：圖7(n))，且將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離(步驟15：圖7(o))。 Next, after the light-shielding film 40 and the etching stopper film 30 corresponding to the second semi-transmissive portion are removed by etching (step 13: FIG. 7(m)), the semi-transmissive film 20 is etched and thinned (step 14: 7(n)), and the third resist pattern (third resist film 50") is peeled off (step 15: FIG. 7(o)).

藉由以上步驟，完成具有透光部、遮光部、第1及第2半透光部之4階之光罩。再者，第1半透光部具有未對半透光膜20進行蝕刻減膜之狀態之曝光之光透過率，第2半透光部具有高於第1半透光部之曝光 之光透過率。 By the above steps, the fourth-order photomask having the light transmitting portion, the light blocking portion, and the first and second semi-transmissive portions is completed. Further, the first semi-transmissive portion has a light transmittance that is not exposed to the semi-transmissive film 20, and the second semi-transmissive portion has an exposure higher than that of the first semi-transmissive portion. Light transmission rate.

[第6實施形態] [Sixth embodiment]

其次，參照圖8對本發明之第6實施形態進行說明。第6實施形態係於最初之圖案化步驟中使透光部及半透光部之形成位置確定者。 Next, a sixth embodiment of the present invention will be described with reference to Fig. 8 . In the sixth embodiment, the position at which the light transmitting portion and the semi-light transmitting portion are formed is determined in the first patterning step.

步驟1：準備與第2實施形態相同之光罩基板1(光罩基底；參照圖4(a))(圖8(a))。 Step 1: Prepare the mask substrate 1 (mask base; see FIG. 4(a)) (FIG. 8(a)) similar to that of the second embodiment.

步驟2：使用描繪裝置描繪用以形成透光部、第1、第2半透光部之第1描繪圖案。於描繪後，進行第1顯影而形成第1抗蝕劑圖案(圖8(b))。此處，第1半透光部及第2半透光部係以曝光之光透過率彼此不同之方式形成者。 Step 2: The first drawing pattern for forming the light transmitting portion and the first and second semi-light transmitting portions is drawn by the drawing device. After the drawing, the first development is performed to form a first resist pattern (Fig. 8(b)). Here, the first semi-transmissive portion and the second semi-transmissive portion are formed such that the light transmittances of the exposures are different from each other.

步驟3：將第1抗蝕劑圖案作為遮罩蝕刻去除遮光膜40及蝕刻終止膜30(圖8(c))。 Step 3: The light-shielding film 40 and the etching stopper film 30 are removed by using the first resist pattern as a mask (Fig. 8(c)).

步驟4：將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離，重新塗佈形成第2抗蝕劑膜50'(圖8(d))。 Step 4: The first resist pattern (first resist film 50) is peeled off, and the second resist film 50' is formed by recoating (Fig. 8 (d)).

步驟5：利用描繪裝置描繪第2描繪圖案且進行第2顯影。藉此，去除與透光部對應之部分之第2抗蝕劑膜50'而形成第2抗蝕劑圖案(圖8(e))。此處，以第2抗蝕劑圖案之與透光部對應之部分中之透明基板10之露出部分之尺寸W2a略大於第1抗蝕劑圖案之與透光部對應之部分中之透明基板10之露出部分之設計尺寸W1a之方式對第2描繪圖案實施加尺寸。藉此，於第1描繪圖案與第2描繪圖案之間產生位置偏移之情形時，亦不會對後續之透光部之形成造成影響。 Step 5: The second drawing pattern is drawn by the drawing device and the second development is performed. Thereby, the second resist film 50' corresponding to the portion corresponding to the light transmitting portion is removed to form a second resist pattern (Fig. 8(e)). Here, the size W2a of the exposed portion of the transparent substrate 10 in the portion of the second resist pattern corresponding to the light transmitting portion is slightly larger than the transparent substrate 10 in the portion of the first resist pattern corresponding to the light transmitting portion. The second drawing pattern is sized to expose the design size W1a of the portion. Therefore, when a positional shift occurs between the first drawing pattern and the second drawing pattern, the formation of the subsequent light transmitting portion is not affected.

步驟6：將第2抗蝕劑圖案作為遮罩蝕刻去除露出之半透光膜20，而形成透光部(圖8(f))。再者，於第2描繪圖案中，對與透光部對應之部分實施加尺寸，因此，成為與透光部鄰接之遮光部之區域之遮光膜40之邊緣X1略微露出。於半透光膜20與遮光膜40之蝕刻特性共通之情形時，於半透光膜20之蝕刻時，有遮光膜40之邊緣X1同時受 到損傷之情形。但是，藉由使半透光膜20之膜厚相對於遮光膜40之膜厚足夠小或使半透光膜20之蝕刻速率相對於遮光膜40之蝕刻速率足夠小等調整，實質上不會對最終之轉印用圖案之形狀造成影響。 Step 6: The exposed second semi-transmissive film 20 is removed by etching the second resist pattern as a mask to form a light transmitting portion (Fig. 8(f)). Further, in the second drawing pattern, the portion corresponding to the light transmitting portion is dimensioned, so that the edge X1 of the light shielding film 40 in the region of the light blocking portion adjacent to the light transmitting portion is slightly exposed. When the etching characteristics of the semi-transmissive film 20 and the light-shielding film 40 are common, when the semi-transmissive film 20 is etched, the edge X1 of the light-shielding film 40 is simultaneously affected. In the case of damage. However, by adjusting the film thickness of the semi-transmissive film 20 sufficiently small relative to the film thickness of the light-shielding film 40 or making the etching rate of the semi-transmissive film 20 sufficiently small with respect to the etching rate of the light-shielding film 40, it is substantially not correct. The shape of the final transfer pattern is affected.

步驟7：將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離(圖8(g))。 Step 7: The second resist pattern (second resist film 50') is peeled off (Fig. 8(g)).

步驟8：重新於表面形成第3抗蝕劑膜50"(圖8(h))。 Step 8: Forming a third resist film 50" on the surface (Fig. 8(h)).

步驟9：利用描繪裝置描繪第3描繪圖案且進行第3顯影。藉此，去除與透光部對應之部分、及與第1半透光部對應之部分之抗蝕劑，而形成透明基板10之表面之一部分與半透光膜20之表面之一部分分別露出之第3抗蝕劑圖案(圖8(i))。再者，此處不去除與上述第2半透光部對應之部分之抗蝕劑。 Step 9: The third drawing pattern is drawn by the drawing device and the third development is performed. Thereby, the portion corresponding to the light transmitting portion and the portion corresponding to the first semi-light transmitting portion are removed, and a portion of the surface of the transparent substrate 10 and a portion of the surface of the semi-transmissive film 20 are respectively exposed. The third resist pattern (Fig. 8(i)). Further, the portion of the resist corresponding to the second semi-transmissive portion is not removed here.

再者，以此處之透明基板10之露出部分之尺寸W3a小於第1抗蝕劑圖案中之與透光部對應之部分中之透明基板10之露出部分之設計尺寸W1a之方式將第2描繪圖案之資料確定尺寸。換言之，第3描繪圖案係對與上述透光部對應之部分實施相對於透光部之設計尺寸減小特定量尺寸之減尺寸者。藉此，即便於第1描繪圖案與第3描繪圖案之間相互產生位置偏移，於步驟3中形成之與透光部鄰接之遮光部之邊緣E(參照圖8(c))亦不會自第3抗蝕劑圖案露出。 Further, the second drawing is performed such that the size W3a of the exposed portion of the transparent substrate 10 is smaller than the design size W1a of the exposed portion of the transparent substrate 10 in the portion corresponding to the light transmitting portion in the first resist pattern. The data of the pattern determines the size. In other words, the third drawing pattern is a size reduction of a portion corresponding to the light transmitting portion by a specific size dimension with respect to the design size of the light transmitting portion. Therefore, even if the first drawing pattern and the third drawing pattern are displaced from each other, the edge E (see FIG. 8(c)) of the light blocking portion adjacent to the light transmitting portion formed in the step 3 is not formed. The third resist pattern is exposed.

又，此處，以第3抗蝕劑圖案之與第1半透光部對應之部分之尺寸略大於第1半透光部之設計尺寸之方式對於第3描繪圖案實施加尺寸。藉此，即便於第1描繪圖案與第3描繪圖案之間產生位置偏移，亦不會對後續之半透光膜20之蝕刻減膜造成影響。 Here, the third drawing pattern is dimensioned so that the size of the portion corresponding to the first semi-transmissive portion of the third resist pattern is slightly larger than the design size of the first semi-transmissive portion. Thereby, even if a positional shift occurs between the first drawing pattern and the third drawing pattern, the subsequent etching of the semi-transmissive film 20 is not affected.

步驟10：將第3抗蝕劑圖案作為遮罩而對在與第1半透光部對應之部分露出之半透光膜20進行蝕刻減膜(第3圖案化步驟：圖8(j))。藉此，形成具有所需之曝光之光透過率之第1半透光部。此時，於遮光膜與半透光膜20之蝕刻特性共通之情形時，伴隨著半透光膜20之蝕刻減膜，有露出之遮光膜40之邊緣X2同時受到損傷之情形。但是，藉 由使半透光膜20之膜厚相對於遮光膜40之膜厚足夠小或使半透光膜20之蝕刻速率相對於遮光膜40之蝕刻速率足夠小等調整，與步驟6(參照圖8(f))同樣地，不會對最終之轉印用圖案之形狀造成實質影響。 Step 10: etching and thinning the semi-transmissive film 20 exposed at a portion corresponding to the first semi-transmissive portion using the third resist pattern as a mask (third patterning step: FIG. 8(j)) . Thereby, the first semi-transmissive portion having the desired light transmittance of the exposure is formed. At this time, in the case where the etching characteristics of the light-shielding film and the semi-transmissive film 20 are common, the edge X2 of the exposed light-shielding film 40 is simultaneously damaged by the etching and film-reduction of the semi-transmissive film 20. But borrow The adjustment is made by making the film thickness of the semi-transmissive film 20 sufficiently smaller than the film thickness of the light shielding film 40 or making the etching rate of the semi-transmissive film 20 sufficiently small with respect to the etching rate of the light shielding film 40, and the step 6 (refer to FIG. 8 (refer to FIG. 8 f)) Similarly, the shape of the final transfer pattern is not substantially affected.

又，與第1~第5實施形態同樣地，於半透光膜20之蝕刻減膜時，與透光部對應之部分之透明基板10露出，因此，可參照透明基板10之光透過率。 In the same manner as in the first to fifth embodiments, when the semi-transmissive film 20 is etched and thinned, the portion of the transparent substrate 10 corresponding to the light-transmitting portion is exposed. Therefore, the light transmittance of the transparent substrate 10 can be referred to.

步驟11：將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離(圖8(k))。 Step 11: The third resist pattern (third resist film 50") is peeled off (Fig. 8(k)).

藉由以上步驟，完成具有透光部、遮光部、及曝光之光透過率彼此不同之第1、第2半透光部之4階之光罩。 By the above steps, the fourth-order photomask having the light-transmitting portion, the light-shielding portion, and the first and second semi-transmissive portions whose light transmittances are different from each other is completed.

圖8所示之第6實施形態之光罩之製造方法之優點在於：即便於複數次之描繪步驟中，產生相互之位置偏移之情形時，其亦不會使圖案化之重疊偏移產生。即，於第1圖案化步驟中，確定透光部、遮光部、及半透光部之相互之位置關係，因此，最終之轉印用圖案中之座標精度變得極高。 An advantage of the method of manufacturing a photomask according to the sixth embodiment shown in Fig. 8 is that even if a mutual positional shift occurs in a plurality of drawing steps, the overlap of the patterning is not caused. . In other words, in the first patterning step, since the positional relationship between the light transmitting portion, the light shielding portion, and the semi-light transmitting portion is determined, the coordinate accuracy in the final transfer pattern is extremely high.

再者，當然，於上述實施形態6中，若省略形成第2半透光部之步驟，則可形成具有透光部、遮光部及第1半透光部之圖案之位置精度優異之光罩。 Further, of course, in the sixth embodiment, if the step of forming the second semi-transmissive portion is omitted, the photomask having excellent positional accuracy of the pattern of the light transmitting portion, the light blocking portion, and the first semi-transmissive portion can be formed. .

[第7實施形態] [Seventh embodiment]

其次，參照圖9對本發明之第7實施形態進行說明。於第7實施形態中使用之透明基板10中未形成成為減膜之對象之光學膜，而形成有其他光學膜或其他光學膜之圖案。於以下說明中，作為上述其他光學膜形成有遮光膜40。 Next, a seventh embodiment of the present invention will be described with reference to Fig. 9 . In the transparent substrate 10 used in the seventh embodiment, an optical film which is a target for film reduction is not formed, and a pattern of another optical film or another optical film is formed. In the following description, the light shielding film 40 is formed as the above other optical film.

步驟1：準備於透明基板10上形成有遮光膜40及第1抗蝕劑膜50之光罩基板1(光罩基底)(圖9(a))。 Step 1: A mask substrate 1 (a mask substrate) in which a light shielding film 40 and a first resist film 50 are formed on a transparent substrate 10 is prepared (FIG. 9(a)).

步驟2：使用描繪裝置描繪用以形成遮光部以外(透光部及半透光部)之描繪圖案，且進行第1顯影，藉此形成劃定遮光部之第1抗蝕劑 圖案(圖9(b))。 Step 2: Using a drawing device to draw a drawing pattern for forming a light-shielding portion (translucent portion and semi-transmissive portion), and performing a first development to form a first resist that defines a light-shielding portion Pattern (Fig. 9(b)).

步驟3：將第1抗蝕劑圖案作為遮罩而蝕刻去除露出之遮光膜40(圖9(c))。 Step 3: The exposed first light-shielding film 40 is removed by etching the first resist pattern as a mask (Fig. 9(c)).

步驟4：將第1抗蝕劑圖案(第1抗蝕劑膜50)剝離(圖9(d))。 Step 4: The first resist pattern (first resist film 50) is peeled off (Fig. 9(d)).

步驟5：重新於透明基板10上之整個面形成半透光膜20(圖9(e))。 Step 5: The semi-transmissive film 20 is formed again on the entire surface of the transparent substrate 10 (Fig. 9(e)).

步驟6：於半透光膜20上之整個面形成第2抗蝕劑膜50'(圖9(f))。 Step 6: A second resist film 50' is formed on the entire surface of the semi-transmissive film 20 (Fig. 9(f)).

以後之步驟係與第1實施形態之步驟2(圖3(b))以後同樣。即，使用描繪裝置形成用以形成透光部之第2抗蝕劑圖案(圖9(g))，且將其作為蝕刻遮罩而蝕刻去除半透光膜20(圖9(h))。繼而，將第2抗蝕劑圖案(第2抗蝕劑膜50')剝離去除(圖9(i))，且重新於表面塗佈形成第3抗蝕劑膜50"(圖9(j))。 The subsequent steps are the same as those in the second step (Fig. 3(b)) of the first embodiment. That is, the second resist pattern for forming the light transmitting portion is formed by using the drawing device (Fig. 9(g)), and the semi-transmissive film 20 is etched away as an etching mask (Fig. 9(h)). Then, the second resist pattern (second resist film 50') is peeled off (FIG. 9(i)), and the third resist film 50" is formed by surface coating again (FIG. 9(j) ).

然後，再次使用描繪裝置描繪用以形成第2半透光部之第3描繪圖案之後，進行顯影而形成第3抗蝕劑圖案(圖9(k))。於該第3描繪圖案中，以透明基板10之露出部分W3小於第2抗蝕劑圖案中之透明基板10之露出部分W2之方式將資料確定尺寸。 Then, the third drawing pattern for forming the second semi-transmissive portion is drawn again by the drawing device, and then developed to form a third resist pattern (Fig. 9(k)). In the third drawing pattern, the material is dimensioned such that the exposed portion W3 of the transparent substrate 10 is smaller than the exposed portion W2 of the transparent substrate 10 in the second resist pattern.

其次，將第3抗蝕劑圖案作為遮罩而對露出之部分之半透光膜20進行蝕刻減膜而形成具有所需之曝光之光透過率之半透光部(圖9(l))。然後，若將第3抗蝕劑圖案(第3抗蝕劑膜50")剝離，則完成具有透光部、遮光部、第1及第2半透光部之4階之光罩(圖9(m))。此處，上述第1半透光部具有未對半透光膜20進行蝕刻減膜之狀態之曝光之光透過率，第2半透光部具有高於第1半透光部之曝光之光透過率。 Next, the semi-transmissive film 20 of the exposed portion is etched and thinned by using the third resist pattern as a mask to form a semi-transmissive portion having a desired light transmittance of exposure (FIG. 9(1)). . Then, when the third resist pattern (third resist film 50") is peeled off, the fourth-order photomask having the light-transmitting portion, the light-shielding portion, and the first and second semi-transmissive portions is completed (FIG. 9). (m)) Here, the first semi-transmissive portion has a light transmittance that is not exposed to the semi-transmissive film 20, and the second semi-transmissive portion has a higher transmittance than the first semi-transmissive portion. The light transmittance of the exposure of the department.

以上，使用圖3~圖9對本發明之複數個實施形態進行了說明，但本發明並不限定於該等實施形態，只要不損害發明之效果，則包含各種態樣。又，只要不損害本發明之作用效果，則亦可變更上述各實施形態中之步驟或附加其他步驟。 Although a plurality of embodiments of the present invention have been described above with reference to FIGS. 3 to 9, the present invention is not limited to the embodiments, and various aspects are included as long as the effects of the invention are not impaired. Further, the steps in the above embodiments or other steps may be added as long as the effects of the present invention are not impaired.

又，第1~第7實施形態之說明中之「第1」、「第2」、「第3」之名 稱係方便地表示步驟之順序者，於其等之前後或其等之中間實施其他步驟之情形時，可適當變換讀法。 In addition, the names of "1st", "2nd", and "3rd" in the description of the first to seventh embodiments The ordering means that the order of the steps is conveniently indicated, and when the other steps are performed before or after or the like, the reading can be appropriately changed.

於該等所有態樣中，更佳為於蝕刻時應用濕式蝕刻。尤其是，於裝置製造用光罩中，必須生產一邊為300mm以上之較大型且具有各種縱橫比或面積之多種光罩基板，因此，應用濕式蝕刻之效果較大。 In all of these aspects, it is more preferred to apply wet etching during etching. In particular, in the reticle for device manufacturing, it is necessary to produce a plurality of reticle substrates having a larger size of 300 mm or more and having various aspect ratios or areas. Therefore, the effect of applying wet etching is large.

又，描繪圖案之確定尺寸(加尺寸、減尺寸)之量可設為0.2~2.0μm。即，藉由相對於針對透光部、半透光部或遮光部之區域之設計尺寸，使各區域之邊界位置前進或後退0.1~1.0μm左右，而增大或減小尺寸。 Further, the amount of the determined size (added size, reduced size) of the drawing pattern can be set to 0.2 to 2.0 μm. In other words, the size of each region is increased or decreased by 0.1 to 1.0 μm with respect to the design size of the region for the light transmitting portion, the semi-light transmitting portion, or the light shielding portion.

又，於第1~第6實施形態中，將透明基板上形成有光學膜及抗蝕劑膜之光罩基底作為起始材料而示出，但是，當然，可如第7實施形態所例示般，將已經實施某些圖案化或其他加工之光罩中間物作為起始材料應用。 Further, in the first to sixth embodiments, the photomask base on which the optical film and the resist film are formed on the transparent substrate is shown as a starting material, but of course, as exemplified in the seventh embodiment. A reticle intermediate that has been subjected to some patterning or other processing is applied as a starting material.

作為本發明之光罩之用途並無特別限制。 The use as the photomask of the present invention is not particularly limited.

例如，亦適合於作為多階光罩有用之所謂省PEP(Photolithography Etching Process，微影蝕刻製程)(於製造顯示裝置面板時，減少使用之光罩之個數)。 For example, it is also suitable as a so-called PEP (Photolithography Etching Process) which is useful as a multi-step mask (the number of masks used is reduced when manufacturing a display panel).

進而，可作為用以形成顯示裝置中之構造材(包含感光性樹脂等)之立體形狀之光罩使用。例如，若形成液晶顯示裝置之感光性間隔件或顯示裝置之絕緣層，則可分別精密地進行複數個具有不同高度之構造材之高度控制，因此，發明之效果較顯著。其於4階以上之光罩中尤其有利。 Further, it can be used as a photomask for forming a three-dimensional shape of a structural material (including a photosensitive resin or the like) in a display device. For example, when the photosensitive spacer of the liquid crystal display device or the insulating layer of the display device is formed, the height control of a plurality of structural materials having different heights can be precisely performed, and the effect of the invention is remarkable. It is particularly advantageous in a reticle of 4th order or more.

再者，作為用以形成上述感光性間隔件及絕緣層之轉印用圖案，例如可使用圖10所示之構成者。具體而言，可使用如圖10所示之轉印用圖案之俯視圖般包含由遮光部包圍之透光部之轉印用圖案(圖 10(a))或包含由半透光部包圍之透光部之轉印用圖案(圖10(b))。進而，亦可使用如圖10(c)所示般於透光部之周圍依序鄰接配置有透過率彼此不同之複數個半透光部(此處為第1、第2半透光部)、及遮光部之轉印用圖案。於此情形時，半透光部越靠近透光部，則越提高曝光之光透過率等，而可形成有用之圖案。再者，圖10係模式性地例示遮光部、透光部、半透光部之鄰接關係者，未必表示將該等形狀之圖案供於實用。進而，亦可設為變更了圖10(c)之透光部、遮光部、半透光部之配置之轉印用圖案。例如，亦可設為於遮光部之周圍依序鄰接配置有半透光部(亦可使光透過率不同之複數個半透光部自光透過率較低者起依序鄰接)、及透光部之轉印用圖案。或者，亦可設為於遮光部之周圍依序鄰接配置有透光部、及半透光部之轉印用圖案。 Further, as the transfer pattern for forming the photosensitive spacer and the insulating layer, for example, the constituents shown in FIG. 10 can be used. Specifically, a transfer pattern including a light-transmitting portion surrounded by a light-shielding portion can be used as shown in a plan view of the transfer pattern shown in FIG. 10 ( 10(a)) or a transfer pattern including a light transmitting portion surrounded by a semi-light transmitting portion (Fig. 10(b)). Further, as shown in FIG. 10(c), a plurality of semi-transmissive portions (here, first and second semi-transmissive portions) having different transmittances may be arranged adjacent to each other around the light-transmitting portion. And a pattern for transfer of the light-shielding portion. In this case, the closer the semi-transmissive portion is to the light-transmitting portion, the more the light transmittance of the exposure is increased, and a useful pattern can be formed. In addition, FIG. 10 schematically illustrates the adjacent relationship of the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion, and does not necessarily indicate that the patterns of the shapes are practical. Further, a transfer pattern in which the light-transmitting portion, the light-shielding portion, and the semi-transmissive portion of FIG. 10(c) are arranged may be changed. For example, a semi-transmissive portion may be disposed adjacent to the periphery of the light-shielding portion (a plurality of semi-transmissive portions having different light transmittances may be sequentially adjacent to each other from a lower light transmittance), and The pattern for transfer of the light portion. Alternatively, the transfer pattern in which the light transmitting portion and the semi-light transmitting portion are disposed may be adjacently arranged around the light shielding portion.

又，本發明包含一種顯示裝置之製造方法，該方法包括使用藉由第1至第7實施形態中任一實施形態而製造之光罩，並利用曝光裝置將轉印用圖案轉印至被轉印體之步驟。 Furthermore, the present invention includes a method of manufacturing a display device, comprising: using a photomask manufactured by any one of the first to seventh embodiments, and transferring the transfer pattern to a transfer by an exposure device The steps of printing.

作為用於轉印之曝光裝置，係進行等倍之投影曝光之方式，且可列舉以下者。即，係作為LCD(Liquid Crystal Display，液晶顯示器)用(或FPD(Flat Panel Display，平板顯示器)用、液晶顯示裝置用)使用之曝光機，且其構成係光學系統之開口數(NA)為0.08~0.15(同調因子(σ)為0.4~0.9)，且具有包含i線、h線及g線之至少一種之光源、較佳為具有包含i線、h線、g線之波長區域之光源(亦稱為寬波長光源)者。作為光源，可使用超高壓水銀燈等。再者，於如開口數NA成為0.10~0.20之曝光裝置中，當然亦可應用本發明而獲得發明之效果。 As an exposure apparatus for transfer, a method of performing equal-fold projection exposure is mentioned, and the following are mentioned. In other words, it is used as an exposure machine for LCD (Liquid Crystal Display) (or FPD (Flat Panel Display), liquid crystal display device), and the number of openings (NA) of the optical system is 0.08 to 0.15 (the homology factor (σ) is 0.4 to 0.9), and has a light source including at least one of an i line, an h line, and a g line, preferably a light source having a wavelength region including an i line, an h line, and a g line; (also known as wide wavelength light source). As the light source, an ultrahigh pressure mercury lamp or the like can be used. Further, in the exposure apparatus in which the number of openings NA is 0.10 to 0.20, of course, the present invention can be applied to obtain the effects of the invention.

進而，作為應用於本發明之光罩之曝光裝置，近接式曝光(近接曝光)方式之曝光裝置亦較佳。作為曝光之光可使用與上述同樣之寬波長光源，將被轉印體與光罩之間隔設為20~300μm左右而進行曝光。 Further, as an exposure apparatus to which the photomask of the present invention is applied, an exposure apparatus of a proximity exposure (near exposure) type is also preferable. As the light for exposure, a wide-wavelength light source similar to the above can be used, and the distance between the transfer target and the reticle is set to about 20 to 300 μm to expose.

作為用於本發明之光罩之光學膜之素材例示以下者。 The following is exemplified as the material of the optical film used for the photomask of the present invention.

此處使用之遮光膜之素材並無特別限制，較佳可使用以下者。例如，除Cr或Cr化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮氧化物等)以外，可較佳地使用Ta、Mo、W及其等之化合物(例如，氧化物、氮化物、氮氧化物、或TaSi、MoSi、WSi(金屬矽化物類)或其等之氮化物、氮氧化物等)等。又，該等材料可單獨使用1種，亦可組合2種以上而使用。作為遮光部而利用之部分之膜厚較佳為設為可獲得充分之遮光性(光學濃度OD≧3、較佳為OD≧4)者。 The material of the light-shielding film used herein is not particularly limited, and the following may preferably be used. For example, in addition to Cr or a Cr compound (oxide, nitride, carbide, nitrogen oxide, carbon oxynitride, etc.) of Cr, it is preferable to use a compound of Ta, Mo, W, and the like (for example, oxidation) a substance, a nitride, an oxynitride, or a nitride of a TaSi, a MoSi, a WSi (a metal telluride) or the like, an oxynitride, or the like). Further, these materials may be used alone or in combination of two or more. The film thickness of the portion used as the light shielding portion is preferably such that sufficient light blocking property (optical density OD ≧ 3, preferably OD ≧ 4) can be obtained.

作為半透光膜，可於與遮光膜之間具有蝕刻選擇性亦可不具有蝕刻選擇性。但是，於不具有蝕刻選擇性(即，蝕刻特性共通)之情形時，可使用共通之蝕刻劑，因此，生產上之效率較佳。 As the semi-transmissive film, there may be an etching selectivity or an etching selectivity between the light-shielding film and the light-shielding film. However, in the case where etching selectivity (i.e., common etching characteristics) is not used, a common etchant can be used, and therefore, production efficiency is preferable.

因此，作為半透光膜之素材可自上述例示之遮光膜素材選擇。又，於蝕刻減膜時，為了容易地進行達到目標光透過率之前之蝕刻時間控制，半透光膜之膜厚更佳為50~2000Å。 Therefore, the material as the semi-transmissive film can be selected from the above-exemplified light-shielding film material. Further, in the case of etching and film-reducing, in order to easily control the etching time before reaching the target light transmittance, the film thickness of the semi-transmissive film is preferably 50 to 2000 Å.

作為蝕刻終止膜，可使用自上述例示之遮光膜素材之中選擇之素材。但是，較理想為相對於上述遮光膜、半透光膜具有蝕刻選擇性，因此，蝕刻終止膜於遮光膜為含有Cr之膜之情形時，可設為含有Si或Ti、Ta之膜，於遮光膜為含有Si、Ta之膜之情形時，可設為含有Cr之膜。 As the etching stopper film, a material selected from the above-exemplified light shielding film materials can be used. However, it is preferable to have an etching selectivity with respect to the light-shielding film or the semi-transmissive film. Therefore, when the light-shielding film is a film containing Cr, the film may be made of a film containing Si, Ti or Ta. When the light shielding film is a film containing Si or Ta, it may be a film containing Cr.

根據本發明，可根據所欲獲得之器件之複雜之設計精密地控制光罩所具有之半透光部之光透過率。尤其是，於半透光部之形成步驟中，可進行透過率測定且正確地掌握必需之追加蝕刻時間。 According to the present invention, the light transmittance of the semi-transmissive portion of the photomask can be precisely controlled according to the complicated design of the device to be obtained. In particular, in the step of forming the semi-transmissive portion, the transmittance measurement can be performed and the necessary additional etching time can be accurately grasped.

又，以能進行此種微調整為前提，可限定應準備之光罩基底之種類。若於所欲獲得之複數個器件分別要求不同之階數、或不同之透過率值之狀況下，應準備之光罩基底變為多品種，則繳納期及成本均產生不妥。另一方面，若應用本發明，則可預先限定應準備之光罩基 底之種類，並且可於步驟中調整為所需之透過率，因此，能以有利之生產效率提供多品種之顯示裝置。 Further, on the premise that such fine adjustment can be performed, the type of the mask base to be prepared can be limited. If the plurality of devices to be obtained require different orders or different transmittance values, and the reticle base to be prepared becomes a multi-variety, the payment period and cost are not appropriate. On the other hand, if the present invention is applied, the reticle base to be prepared can be predefined The type of the bottom can be adjusted to the required transmittance in the step, and therefore, a variety of display devices can be provided with advantageous production efficiency.

又，如第6實施形態(參照圖8)中所述，亦可選擇提高透光部、遮光部及各半透光部等各區域之座標精度之步驟。 Further, as described in the sixth embodiment (see FIG. 8), the step of improving the coordinate accuracy of each of the light transmitting portion, the light blocking portion, and each of the semi-transmissive portions may be selected.

1‧‧‧光罩基板 1‧‧‧Photomask substrate

10‧‧‧透明基板 10‧‧‧Transparent substrate

50‧‧‧抗蝕劑膜 50‧‧‧resist film

50'‧‧‧抗蝕劑膜 50'‧‧‧Resist film

60‧‧‧光學膜 60‧‧‧Optical film

Claims (13)

一種光罩之製造方法，其包括藉由使於透明基板上形成有光學膜之光罩基板之上述光學膜圖案化而形成轉印用圖案，其特徵在於包括：準備於上述透明基板上形成有光學膜且於該光學膜上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係於上述第1抗蝕劑膜描繪第1描繪圖案且進行顯影；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除上述光學膜，從而使上述透明基板之表面之一部分露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係於上述第2抗蝕劑膜描繪第2描繪圖案且進行顯影，而使上述透明基板之表面之一部分及上述光學膜之表面之一部分分別露出；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而對上述光學膜進行蝕刻減膜；及將上述第2抗蝕劑圖案剝離之步驟；且以上述第2抗蝕劑圖案中之上述透明基板之露出部分成為較上述第1抗蝕劑圖案中之上述透明基板之露出部分小特定量之尺寸之方式，對上述第2描繪圖案實施減尺寸。 A method of manufacturing a photomask, comprising: forming a transfer pattern by patterning the optical film of a photomask substrate on which an optical film is formed on a transparent substrate, comprising: preparing to be formed on the transparent substrate a step of applying a photomask substrate of a first resist film to the optical film; and a first resist pattern forming step of drawing the first drawing pattern on the first resist film a first patterning step of etching and removing the optical film by using the first resist pattern as a mask to expose one surface of the transparent substrate; and peeling off and removing the first resist pattern a step of applying a second resist pattern; and a second resist pattern forming step of drawing a second drawing pattern on the second resist film and performing development to form a portion of the surface of the transparent substrate and the above a part of the surface of the optical film is exposed; a second patterning step of etching the film by using the second resist pattern as a mask; and removing the second resist pattern Further, the second drawing pattern is reduced in such a manner that the exposed portion of the transparent substrate in the second resist pattern is smaller than a size of the exposed portion of the transparent substrate in the first resist pattern by a specific amount. size. 一種光罩之製造方法，該光罩係於透明基板上具備包含透光部及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上形成有光學膜且於該光學膜上塗佈有第1抗蝕劑膜之光罩基板之步驟； 第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1描繪圖案且進行顯影，而去除與上述透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除上述光學膜，而使上述透明基板之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案且進行顯影，而去除與上述透光部及上述半透光部分別對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而對上述光學膜進行蝕刻減膜，從而形成具有所需之曝光之光透過率之上述半透光部；及將上述第2抗蝕劑圖案剝離之步驟；且上述第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 A photomask manufacturing method comprising: a transfer pattern comprising a light transmitting portion and a semi-transmissive portion having a desired light transmittance; and the manufacturing method is characterized by comprising: a step of preparing a photomask substrate on which the optical film is formed on the transparent substrate and the first resist film is coated on the optical film; a first resist pattern forming step of removing a first resist film corresponding to the light transmitting portion by drawing the first pattern on the first resist film and developing the first resist film; the first pattern a step of etching and removing the optical film by using the first resist pattern as a mask to expose the surface of the transparent substrate; peeling off the first resist pattern and recoating the second resist a step of forming a second resist pattern forming step by drawing a second drawing pattern on the second resist film and performing development, thereby removing portions corresponding to the light transmitting portion and the semi-transmissive portion, respectively a second resist film; the second patterning step of etching and thinning the optical film by using the second resist pattern as a mask to form a light transmittance having a desired exposure a semi-transmissive portion; and a step of peeling off the second resist pattern; and the second drawing pattern is configured to reduce a design size of the light-transmitting portion by a specific size with respect to a portion corresponding to the light-transmitting portion Reduced size. 如請求項2之光罩之製造方法，其中對上述光學膜進行蝕刻減膜時之蝕刻速度以曝光之光之透過率變化量之形式為0.3~5.0%/min。 The method of manufacturing a photomask according to claim 2, wherein the etching rate at the time of etching and thinning the optical film is 0.3 to 5.0%/min in the form of a change in transmittance of the exposed light. 如請求項2之光罩之製造方法，其中進行上述蝕刻減膜之上述光學膜之膜厚為50~2000Å。 The method of manufacturing a photomask according to claim 2, wherein the film thickness of the optical film subjected to the etching and film-removing is 50 to 2000 Å. 一種光罩之製造方法，該光罩係於透明基板上具備包含遮光部、透光部、及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪 第1描繪圖案且進行顯影，而去除與上述透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩，蝕刻去除上述遮光膜、上述蝕刻終止膜及上述半透光膜而使上述透明基板之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案且進行顯影，而去除與上述透光部及上述半透光部分別對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述遮光膜及上述蝕刻終止膜，進而對上述半透光膜進行蝕刻減膜而形成上述具有所需之曝光之光透過率之上述半透光部；及將上述第2抗蝕劑圖案剝離之步驟；且上述第2描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 A method of manufacturing a photomask according to the present invention, comprising: a light-shielding portion, a light-transmitting portion, and a transfer pattern having a semi-transmissive portion having a desired light transmittance of exposure; and the manufacturing method The method includes the steps of: preparing a photomask substrate having a semi-transmissive film, an etching stopper film, and a light shielding film on the transparent substrate and coating the first resist film on the laminate; the first resist a pattern forming step by drawing the first resist film The first resist pattern is removed by first drawing, and the first resist film is removed from the portion corresponding to the light transmitting portion. The first patterning step is performed by etching the first resist pattern as a mask. a film, the etching stopper film and the semi-transmissive film to expose a surface of the transparent substrate; a step of peeling off the first resist pattern and recoating the second resist film; and forming a second resist pattern a second resist film that removes a portion corresponding to each of the light transmitting portion and the semi-transmissive portion by drawing the second drawing pattern on the second resist film and developing the second resist film; the second pattern a step of etching and removing the light shielding film and the etching stopper film by using the second resist pattern as a mask, and further etching and thinning the semi-transmissive film to form the light having the desired exposure And a step of peeling off the second resist pattern; and the second drawing pattern is configured to reduce a design size of the portion corresponding to the light transmitting portion with respect to the light transmitting portion Size reduction . 如請求項5之光罩之製造方法，其中當將上述半透光部設為第1半透光部時，上述轉印用圖案進而具有第2半透光部，該第2半透光部具有與上述第1半透光部不同之曝光之光透過率，且該製造方法包括：將上述第2抗蝕劑圖案剝離之後重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案且進行顯影，而去除與上述第2半透光部對應之部分之上述第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而蝕刻 去除上述遮光膜及蝕刻終止膜，從而形成第2半透光部；及將上述第3抗蝕劑圖案剝離之步驟。 The method of manufacturing a reticle according to claim 5, wherein, when the semi-transmissive portion is the first semi-transmissive portion, the transfer pattern further includes a second semi-transmissive portion, and the second semi-transmissive portion The light transmittance of the exposure different from the first semi-transmissive portion, and the manufacturing method includes the step of peeling off the second resist pattern and then applying the third resist film; the third resist a pattern forming step of removing the third resist film corresponding to the second semi-transmissive portion by drawing the third drawing pattern on the third resist film; and developing the third resist film; a step of etching the third resist pattern as a mask Removing the light shielding film and the etching stopper film to form a second semi-transmissive portion; and a step of peeling off the third resist pattern. 如請求項5之光罩之製造方法，其中當將上述半透光部設為第1半透光部時，上述轉印用圖案進而具有第2半透光部，該第2半透光部具有與上述第1半透光部不同之曝光之光透過率，且該製造方法包括：將上述第2抗蝕劑圖案剝離之後，重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案且進行顯影，而去除與上述第2半透光部、及上述透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而蝕刻去除上述遮光膜及上述蝕刻終止膜，進而對上述半透光膜進行蝕刻減膜而形成上述第2半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者。 The method of manufacturing a reticle according to claim 5, wherein, when the semi-transmissive portion is the first semi-transmissive portion, the transfer pattern further includes a second semi-transmissive portion, and the second semi-transmissive portion The light transmittance of the exposure different from the first semi-transmissive portion, and the manufacturing method includes the step of re-coating the third resist film after peeling off the second resist pattern; and the third resist a pattern forming step of removing the third resist corresponding to the second semi-transmissive portion and the light-transmitting portion by drawing the third drawing pattern on the third resist film and developing the pattern a third patterning step of etching and removing the light shielding film and the etching stopper film by using the third resist pattern as a mask, and further etching and thinning the semi-transmissive film to form the second half a light transmitting portion; and a step of peeling off the third resist pattern; and the third drawing pattern is configured to reduce a design size of the light transmitting portion by a specific amount by a portion corresponding to the light transmitting portion Size. 一種光罩之製造方法，該光罩係於透明基板上具備包含遮光部、透光部及具有所需之曝光之光透過率之半透光部之轉印用圖案者，且該製造方法之特徵在於包括：準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1描繪圖案且進行顯影，而去除與上述透光部及上述半透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻 去除上述遮光膜及上述蝕刻終止膜，從而使上述半透光膜之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案且進行顯影，而去除與上述透光部對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述半透光膜，從而形成上述透光部；將上述第2抗蝕劑圖案剝離且重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案且進行顯影，而去除與上述透光部及上述半透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩而對上述半透光膜進行蝕刻減膜，從而形成具有所需之曝光之光透過率之上述半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第2描繪圖案包含對與上述透光部對應之部分實施相對於上述透光部之設計尺寸增大特定量尺寸之加尺寸者；且上述第3描繪圖案係對與上述透光部對應之部分實施相對於上述透光部之設計尺寸減小特定量尺寸之減尺寸者，並且係對與上述半透光部對應之部分實施相對於上述半透光部之設計尺寸增大特定量尺寸之加尺寸者。 A method of manufacturing a photomask comprising a light-shielding portion, a light-transmitting portion, and a transfer pattern having a semi-transmissive portion having a desired light transmittance of light, and the method of manufacturing the photomask The method includes the steps of: preparing a photomask substrate having a semi-transmissive film, an etching stopper film, and a light-shielding film on the transparent substrate and applying the first resist film on the laminate; and a first resist; a pattern forming step of removing a first resist film corresponding to the light transmitting portion and the semi-light transmitting portion by drawing the first pattern on the first resist film and developing the film; a patterning step of etching the first resist pattern as a mask Removing the light shielding film and the etching stopper film to expose the surface of the semi-transmissive film; removing the first resist pattern and recoating the second resist film; and forming a second resist pattern a step of removing a second resist film corresponding to the light transmitting portion by drawing the second drawing pattern on the second resist film and performing development; and a second patterning step The second resist pattern is used as a mask to etch away the semi-transmissive film to form the light-transmitting portion; the second resist pattern is peeled off and the third resist film is re-coated; and the third resist An etchant pattern forming step of removing a third resist film corresponding to the light transmitting portion and the semi-light transmitting portion by drawing the third drawing pattern on the third resist film and performing development; a third patterning step of etching and thinning the semi-transmissive film by using the third resist pattern as a mask to form the semi-transmissive portion having a desired light transmittance of exposure; a step of peeling off the third resist pattern; and the second The drawing pattern includes a portion for which a portion corresponding to the light transmitting portion is increased by a specific size with respect to a design size of the light transmitting portion; and the third drawing pattern is opposite to a portion corresponding to the light transmitting portion. The size of the light-transmitting portion is reduced by a specific size, and the portion corresponding to the semi-transmissive portion is increased by a specific size with respect to the design size of the semi-transmissive portion. . 一種光罩之製造方法，該光罩係於透明基板上具備包含遮光部、透光部、具有所需之曝光之光透過率之第1半透光部及具有與該第1半透光部不同之所需之曝光之光透過率之第2半透光部之轉印用圖案者，該製造方法之特徵在於包括： 準備於上述透明基板上積層有半透光膜、蝕刻終止膜、及遮光膜且於該積層上塗佈有第1抗蝕劑膜之光罩基板之步驟；第1抗蝕劑圖案形成步驟，其係藉由於上述第1抗蝕劑膜描繪第1描繪圖案且進行顯影，而去除與上述透光部、上述第1半透光部及上述第2半透光部對應之部分之第1抗蝕劑膜；第1圖案化步驟，其係將上述第1抗蝕劑圖案作為遮罩而蝕刻去除與上述透光部、上述第1半透光部及上述第2半透光部對應之部分之上述遮光膜及上述蝕刻終止膜，從而使上述半透光膜之表面露出；將上述第1抗蝕劑圖案剝離且重新塗佈第2抗蝕劑膜之步驟；第2抗蝕劑圖案形成步驟，其係藉由於上述第2抗蝕劑膜描繪第2描繪圖案且進行顯影，而去除與上述透光部對應之部分之第2抗蝕劑膜；第2圖案化步驟，其係將上述第2抗蝕劑圖案作為遮罩而蝕刻去除上述半透光膜，從而形成上述透光部；將上述第2抗蝕劑圖案剝離且重新塗佈第3抗蝕劑膜之步驟；第3抗蝕劑圖案形成步驟，其係藉由於上述第3抗蝕劑膜描繪第3描繪圖案且進行顯影，而去除與上述透光部及上述第1半透光部對應之部分之第3抗蝕劑膜；第3圖案化步驟，其係將上述第3抗蝕劑圖案作為遮罩，對與上述第1半透光部對應之部分之上述半透光膜進行蝕刻減膜而形成上述第1半透光部；及將上述第3抗蝕劑圖案剝離之步驟；且上述第2描繪圖案包含對與上述透光部對應之部分實施相對於上述透光部之設計尺寸增大特定量尺寸之加尺寸者，上述第3描繪圖案係對與上述透光部對應之部分實施相對於上 述透光部之設計尺寸減小特定量尺寸之減尺寸者，並且係對與上述第1半透光部對應之部分實施相對於上述第1半透光部之設計尺寸增大特定量尺寸之加尺寸者。 A method of manufacturing a photomask comprising a light-shielding portion, a light-transmitting portion, a first semi-transmissive portion having a desired light transmittance, and a first semi-transmissive portion; The manufacturing method is characterized in that: the transfer pattern of the second semi-transmissive portion of the light transmittance of the exposure required is: a step of forming a mask substrate having a semi-transmissive film, an etching stopper film, and a light-shielding film on the transparent substrate and applying the first resist film thereon; and a first resist pattern forming step; The first resist is formed by drawing the first drawing pattern on the first resist film, and removing the first resist corresponding to the light transmitting portion, the first semi-transmissive portion, and the second semi-transmissive portion. An etchant film; the first patterning step of etching and removing the portion corresponding to the light transmitting portion, the first semi-transmissive portion, and the second semi-transmissive portion by using the first resist pattern as a mask The light shielding film and the etching stopper film expose the surface of the semi-transmissive film; the step of peeling off the first resist pattern and recoating the second resist film; and forming the second resist pattern a step of removing a second resist film corresponding to the light transmitting portion by drawing the second drawing pattern on the second resist film and performing development; and a second patterning step The second resist pattern is etched as a mask to remove the semi-transmissive film, thereby forming a light transmissive portion; a step of peeling off the second resist pattern and recoating the third resist film; and a third resist pattern forming step by drawing the third resist film 3: drawing a pattern and performing development to remove a third resist film corresponding to the light transmitting portion and the first semi-transmissive portion; and a third patterning step of using the third resist pattern as a mask for etching and thinning the semi-transmissive film corresponding to the first semi-transmissive portion to form the first semi-transmissive portion; and a step of peeling off the third resist pattern; The second drawing pattern includes a portion for which a portion corresponding to the light transmitting portion is increased by a specific size with respect to a design size of the light transmitting portion, and the third drawing pattern is applied to a portion corresponding to the light transmitting portion. Relative to upper The design size of the light transmitting portion is reduced by a specific size, and the portion corresponding to the first semi-transmissive portion is increased by a specific size with respect to the design size of the first semi-transmissive portion. Plus size. 如請求項5至9中任一項之光罩之製造方法，其中上述轉印用圖案包含由上述遮光部包圍之上述透光部。 The method of manufacturing a photomask according to any one of claims 5 to 9, wherein the transfer pattern includes the light transmitting portion surrounded by the light shielding portion. 如請求項2至8中任一項之光罩之製造方法，其中上述轉印用圖案包含由上述半透光部包圍之上述透光部。 The method of manufacturing a photomask according to any one of claims 2 to 8, wherein the transfer pattern includes the light transmitting portion surrounded by the semi-transmissive portion. 如請求項2至8中任一項之光罩之製造方法，其中上述轉印用圖案之半透光部包含第1半透光部、及曝光之光透過率高於上述第1半透光部之第2半透光部，上述轉印用圖案包含由上述1半透光部包圍之上述第2半透光部。 The method of manufacturing a reticle according to any one of claims 2 to 8, wherein the semi-transmissive portion of the transfer pattern includes a first semi-transmissive portion, and an exposure light transmittance is higher than the first semi-transmissive light. In the second semi-transmissive portion of the portion, the transfer pattern includes the second semi-transmissive portion surrounded by the one semi-transmissive portion. 一種顯示裝置之製造方法，其特徵在於包括如下步驟：準備利用如請求項1至9中任一項之製造方法製造之光罩；及使用上述準備之光罩及曝光裝置，於被轉印體上轉印上述轉印用圖案。 A manufacturing method of a display device, comprising the steps of: preparing a photomask manufactured by the manufacturing method according to any one of claims 1 to 9; and using the prepared photomask and exposure device on the object to be transferred The transfer pattern described above is transferred.
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