TWI602646B - Embedded grinding wheel device and manufacturing method thereof - Google Patents
Embedded grinding wheel device and manufacturing method thereof Download PDFInfo
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本發明是關於一種陶瓷磨削裝置及其製造方法，特別是關於一種可用一個結構執行兩個研磨製程的嵌入式陶瓷磨削裝置及其製造方法。 The present invention relates to a ceramic grinding apparatus and a method of manufacturing the same, and more particularly to an embedded ceramic grinding apparatus which can perform two grinding processes by one structure and a method of manufacturing the same.
隨著產業的進步，平坦化製程經常被採用為生產各種元件的製程。在平坦化製程中，化學機械拋光(Chemical Mechanical Polishing；CMP)與精密研磨(Lapping)製程經常為產業所使用。一般來說，化學機械拋光製程是將研磨體貼附於研磨承載台上，供應研磨液於研磨體上，同時對研磨工件(例如半導體晶圓)施加一壓力以將其壓置於研磨體上，且讓研磨工件及研磨體彼此進行相對運動。藉由相對運動所產生的機械摩擦及研磨液的交互作用下，移除部分研磨工件之表層，而使其表面逐漸平坦，來達成平坦化之效果。另外，精密研磨是使工件產生平滑鏡面的超精密研磨技術，其目的在於使表面粗糙度及平坦度到達一定的可容許範圍。 As the industry advances, flattening processes are often adopted as processes for producing various components. In the flattening process, chemical mechanical polishing (CMP) and precision lapping processes are often used in the industry. Generally, the chemical mechanical polishing process attaches the abrasive body to the polishing stage, supplies the polishing liquid to the polishing body, and applies a pressure to the abrasive workpiece (for example, the semiconductor wafer) to press it onto the polishing body. And the grinding workpiece and the grinding body are moved relative to each other. The surface of the partially polished workpiece is removed by the interaction of the mechanical friction and the polishing liquid generated by the relative motion, and the surface is gradually flattened to achieve the flattening effect. In addition, precision polishing is an ultra-precision polishing technique that produces a smooth mirror surface for a workpiece, and its purpose is to achieve a certain allowable range of surface roughness and flatness.
目前市面上有一種傳統的研磨裝置，其研磨體具有多個同心圓溝槽，其用來容納及傳輸研磨液。然而，由於各個同心圓溝槽之間並不相連，因此可能造成研磨表面不同區域的研磨液傳輸不佳，特別是對應於研磨工件的區域研磨液流場分布較差，進而容易造成研磨工件之研磨率不均勻的問題。此外，傳統研磨製程在進行化學機械拋光與精密研磨時，需要分別使用不同的研磨裝置，也就是說，需要更換研磨體或者更換整個研磨裝置才能實現兩個研磨製程，這樣不但耗費時間，而且會增加成本。 There is currently a conventional polishing apparatus on the market in which the abrasive body has a plurality of concentric grooves for containing and transporting the slurry. However, since the concentric grooves are not connected to each other, the polishing liquid in different areas of the grinding surface may be poorly transported, and in particular, the flow field of the polishing liquid corresponding to the area of the grinding workpiece is poorly distributed, which may easily cause grinding of the grinding workpiece. The problem of uneven rate. In addition, the traditional grinding process requires separate grinding devices for chemical mechanical polishing and precision grinding, that is, it is necessary to replace the grinding body or replace the entire grinding device to achieve two grinding processes, which is not only time consuming, but also increase cost.
由此可知，目前市場上缺乏一種能減少加工工序、縮短加工時間以及降低加工成本的陶瓷磨削裝置及其製造方法，故相關業者均在尋求其解決之道。 It can be seen that there is a lack of a ceramic grinding device and a manufacturing method thereof which can reduce the processing steps, shorten the processing time, and reduce the processing cost, and the related companies are seeking solutions.
因此，本發明之目的在於提供一種嵌入式陶瓷磨削裝置及其製造方法，其藉由兩個不同厚度的陶瓷研磨體結合一承載盤之結構即能完成精密研磨(Lapping)與化學機械拋光(Chemical Mechanical Polishing；CMP)，無須更換陶瓷研磨體或承載盤，能大幅地減少加工時間、加工成本以及提升加工效率。此外，特殊形狀的陶瓷研磨體具有大接觸面積，能夠完整涵蓋一定大小的工件，可達成晶圓在研磨時降低內外圈移除率不均勻之目的。再者，由於內環的第一陶瓷研磨體高於外環的第二陶瓷研磨體，故內環的第一陶瓷研磨體於研磨時能夠避免被 外環第二陶瓷研磨體的精密研磨所產生之磨屑、副產物以及掉落之鑽石汙染。另外，儲存於溝槽的研磨液能夠針對工件再次進行研磨，可提升效率及增加表面粗糙度，而且可拆卸式的結構能夠提升研磨裝置的製作效率並增加拆換的便利性。 Accordingly, it is an object of the present invention to provide an embedded ceramic grinding apparatus and a method of manufacturing the same that can perform Lapping and chemical mechanical polishing by combining two ceramic grinding bodies of different thicknesses with a carrier disk structure ( Chemical Mechanical Polishing; CMP), without the need to replace ceramic abrasive bodies or carrier plates, can significantly reduce processing time, processing costs and improve processing efficiency. In addition, the special shape of the ceramic abrasive body has a large contact area, which can completely cover a certain size of the workpiece, and can achieve the purpose of reducing the uneven removal rate of the inner and outer rings during the grinding. Furthermore, since the first ceramic abrasive body of the inner ring is higher than the second ceramic abrasive body of the outer ring, the first ceramic abrasive body of the inner ring can be prevented from being Abrasives, by-products, and dropped diamonds produced by precision grinding of the outer second ceramic grinding body. In addition, the polishing liquid stored in the groove can be ground again for the workpiece, which can improve the efficiency and increase the surface roughness, and the detachable structure can improve the manufacturing efficiency of the polishing device and increase the convenience of replacement.
依據本發明一態樣之一實施方式提供一種嵌入式陶瓷磨削裝置，其包含一旋轉運作的承載盤、一第一陶瓷研磨體以及一第二陶瓷研磨體。第一陶瓷研磨體設於承載盤上，且第一陶瓷研磨體具有一第一高度。至於第二陶瓷研磨體則設於承載盤上且環繞第一陶瓷研磨體之外側。第二陶瓷研磨體與第一陶瓷研磨體之材質相異且相隔一間隙。第二陶瓷研磨體具有一第二高度，第二高度小於第一高度。 According to an embodiment of the present invention, an embedded ceramic grinding apparatus includes a rotationally operated carrier disk, a first ceramic abrasive body, and a second ceramic abrasive body. The first ceramic abrasive body is disposed on the carrier tray, and the first ceramic abrasive body has a first height. As for the second ceramic abrasive body, it is disposed on the carrier tray and surrounds the outer side of the first ceramic abrasive body. The material of the second ceramic abrasive body and the first ceramic abrasive body are different and separated by a gap. The second ceramic abrasive body has a second height, the second height being less than the first height.
藉此，本發明之裝置結構透過高低差之雙研磨體在不更換陶瓷研磨體與承載盤的條件下完成精密研磨與化學機械拋光，不但可減少更換之加工工序，還可減少加工時間、加工成本以及提升加工效率。 Thereby, the structure of the device of the present invention can complete the precision grinding and chemical mechanical polishing without changing the ceramic grinding body and the carrier plate through the double-grinding body of the height difference, thereby not only reducing the processing process of replacement, but also reducing the processing time and processing. Cost and increase processing efficiency.
前述實施方式之其他實施例如下：前述第一陶瓷研磨體與承載盤可均呈圓形，第二陶瓷研磨體呈圓環形。第一陶瓷研磨體與第二陶瓷研磨體之間形成一環狀凹槽，環狀凹槽的寬度等於間隙。前述第一陶瓷研磨體可用於一化學機械拋光，第二陶瓷研磨體用於一精密研磨。此外，前述嵌入式陶瓷磨削裝置可包含一拆卸板與複數個固定件，其中拆卸板具有一第一連接面與一第二連接面，第 一連接面與第二連接面彼此朝向相反。第一連接面連接於第一陶瓷研磨體與第二陶瓷研磨體，第二連接面連接承載盤。而固定件可拆卸地連接承載盤與拆卸板，固定件貫穿承載盤並螺接拆卸板，藉以令承載盤與拆卸板緊密地連接。再者，前述第一陶瓷研磨體具有至少一第一環狀溝槽與複數條第一直線溝槽，且第一環狀溝槽與第一直線溝槽彼此相交。第二陶瓷研磨體具有至少一第二環狀溝槽與複數條第二直線溝槽，第二環狀溝槽與第二直線溝槽彼此相交，且第二直線溝槽分別對應銜接第一直線溝槽。 Other embodiments of the foregoing embodiments include the following: the first ceramic abrasive body and the carrier disk may each have a circular shape, and the second ceramic abrasive body has a circular shape. An annular groove is formed between the first ceramic abrasive body and the second ceramic abrasive body, and the annular groove has a width equal to the gap. The first ceramic abrasive body can be used for a chemical mechanical polishing, and the second ceramic abrasive body can be used for a precision polishing. In addition, the embedded ceramic grinding device may include a disassembling plate and a plurality of fixing members, wherein the disassembling plate has a first connecting surface and a second connecting surface, A connecting surface and a second connecting surface face each other in opposite directions. The first connecting surface is connected to the first ceramic grinding body and the second ceramic grinding body, and the second connecting surface is connected to the carrier tray. The fixing member is detachably connected to the carrier tray and the detaching plate, and the fixing member penetrates the carrier tray and is screwed to the detaching plate, so that the carrier tray and the detaching panel are closely connected. Furthermore, the first ceramic abrasive body has at least one first annular groove and a plurality of first linear grooves, and the first annular groove and the first linear groove intersect each other. The second ceramic grinding body has at least one second annular groove and a plurality of second linear grooves, the second annular groove and the second linear groove intersect each other, and the second linear groove respectively corresponds to the first straight groove groove.
依據本發明另一態樣之一實施方式提供一種嵌入式陶瓷磨削裝置之製造方法，其包含一研磨體成形步驟與一接合步驟，其中研磨體成形步驟包含混合步驟、第一加壓步驟以及一第一加溫步驟。混合步驟係混合一陶瓷粉末與一鑽石磨料而形成一第一混合磨料與一第二混合磨料。第一加壓步驟係施加一第一壓力於第一混合磨料與第二混合磨料以分別形成一第一研磨碇與一第二研磨碇。而第一加溫步驟則是施加一第一溫度於第一研磨碇與第二研磨碇以分別形成第一陶瓷研磨體與第二陶瓷研磨體。此外，接合步驟包含一塗佈步驟、一第二加壓步驟以及一第二加溫步驟。塗佈步驟係塗佈一黏著劑於承載盤上。第二加壓步驟係將第一陶瓷研磨體與第二陶瓷研磨體對應連接承載盤之黏著劑，並施加一第二壓力於第一陶瓷研磨體與第二陶瓷研磨體上，令第一陶瓷研磨體、第二陶瓷研磨體及承載盤相互緊密接合。至於第二加溫步驟則是施加一第 二溫度於第一陶瓷研磨體、第二陶瓷研磨體及承載盤，並靜置一加溫時間。 According to another embodiment of the present invention, a method of manufacturing an embedded ceramic grinding apparatus includes a polishing body forming step and a bonding step, wherein the grinding body forming step includes a mixing step, a first pressing step, and A first warming step. The mixing step mixes a ceramic powder with a diamond abrasive to form a first mixed abrasive and a second mixed abrasive. The first pressurizing step applies a first pressure to the first mixed abrasive and the second mixed abrasive to form a first abrasive crucible and a second abrasive crucible, respectively. The first heating step is to apply a first temperature to the first polishing crucible and the second polishing crucible to form the first ceramic abrasive body and the second ceramic abrasive body, respectively. Further, the bonding step includes a coating step, a second pressing step, and a second heating step. The coating step is to apply an adhesive to the carrier. The second pressing step is to connect the first ceramic abrasive body and the second ceramic abrasive body to the adhesive of the carrier disk, and apply a second pressure to the first ceramic abrasive body and the second ceramic abrasive body to make the first ceramic The abrasive body, the second ceramic abrasive body, and the carrier disk are in close contact with each other. As for the second heating step, it is to apply a The second temperature is on the first ceramic abrasive body, the second ceramic abrasive body and the carrier tray, and is allowed to stand for a warming time.
藉此，本發明之製造方法透過特定的參數步驟製造出高低不同之雙陶瓷研磨體連結承載盤，其製程簡易且製造成本低廉。 Thereby, the manufacturing method of the present invention can produce a double ceramic abrasive body connecting carrier disk of different heights through a specific parameter step, which is simple in process and low in manufacturing cost.
前述實施方式之其他實施例如下：前述黏著劑可為一環氧樹脂。前述第一陶瓷研磨體可用於一化學機械拋光，第二陶瓷研磨體用於一精密研磨。前述第二壓力可為10公斤，第二溫度可為80℃，且加溫時間可為10小時。 Other embodiments of the foregoing embodiments are as follows: The adhesive may be an epoxy resin. The first ceramic abrasive body can be used for a chemical mechanical polishing, and the second ceramic abrasive body can be used for a precision polishing. The aforementioned second pressure may be 10 kg, the second temperature may be 80 ° C, and the heating time may be 10 hours.
依據本發明又一態樣之一實施方式提供一種嵌入式陶瓷磨削裝置之製造方法，其包含一研磨體成形步驟與一接合步驟。其中研磨體成形步驟包含一混合步驟、一第一加壓步驟以及一第一加溫步驟，混合步驟係混合一陶瓷粉末與一鑽石磨料而形成一第一混合磨料與一第二混合磨料。第一加壓步驟係施加一第一壓力於第一混合磨料與第二混合磨料以分別形成一第一研磨碇與一第二研磨碇。第一加溫步驟係施加一第一溫度於第一研磨碇與第二研磨碇以分別形成第一陶瓷研磨體與第二陶瓷研磨體。此外，接合步驟包含一塗佈步驟、一第二加壓步驟以及一第二加溫步驟，其中塗佈步驟係塗佈一黏著劑於拆卸板之第一連接面上。第二加壓步驟係將第一陶瓷研磨體與第二陶瓷研磨體對應連接拆卸板之黏著劑，並施加一第二壓力於第一陶瓷研磨體與第二陶瓷研磨體上，令第一陶瓷研磨體、第 二陶瓷研磨體及拆卸板相互緊密接合。至於第二加溫步驟係施加一第二溫度於第一陶瓷研磨體、第二陶瓷研磨體及拆卸板，並靜置一加溫時間。 According to still another embodiment of the present invention, a method of manufacturing an embedded ceramic grinding apparatus includes a polishing body forming step and a bonding step. The grinding body forming step comprises a mixing step, a first pressing step and a first heating step. The mixing step mixes a ceramic powder and a diamond abrasive to form a first mixed abrasive and a second mixed abrasive. The first pressurizing step applies a first pressure to the first mixed abrasive and the second mixed abrasive to form a first abrasive crucible and a second abrasive crucible, respectively. The first warming step applies a first temperature to the first abrasive crucible and the second abrasive crucible to form the first ceramic abrasive body and the second ceramic abrasive body, respectively. In addition, the bonding step includes a coating step, a second pressing step, and a second heating step, wherein the coating step applies an adhesive to the first joining surface of the detaching plate. The second pressing step is to connect the first ceramic abrasive body and the second ceramic abrasive body to the adhesive of the disassembly plate, and apply a second pressure to the first ceramic abrasive body and the second ceramic abrasive body to make the first ceramic Abrasive body, first The two ceramic abrasive bodies and the disassembly plates are tightly joined to each other. As for the second warming step, a second temperature is applied to the first ceramic abrasive body, the second ceramic abrasive body, and the disassembling plate, and a warming time is allowed to stand.
藉此，本發明之製造方法透過特定的參數步驟可將陶瓷研磨體及拆卸板緊固黏結，並將拆卸板與承載盤螺鎖定位，所製造出來的雙陶瓷研磨體擁有不同的高低落差。再者，本發明之製造方法非常適合應用於雙陶瓷研磨體或多陶瓷研磨體之製作，而且具有製程簡易及低製造成本之效。 Thereby, the manufacturing method of the present invention can fasten and bond the ceramic grinding body and the disassembling plate through a specific parameter step, and lock the disassembling plate and the carrier disc, and the manufactured double ceramic grinding body has different height difference. Furthermore, the manufacturing method of the present invention is very suitable for the production of a double ceramic abrasive body or a multi-ceramic abrasive body, and has the advantages of simple process and low manufacturing cost.
前述實施方式之其他實施例如下：前述接合步驟可包含一螺鎖步驟，此螺鎖步驟係螺鎖固定件於承載盤與拆卸板，藉以令承載盤與拆卸板緊密地連接。此外，前述第一陶瓷研磨體可用於一化學機械拋光，第二陶瓷研磨體用於一精密研磨。第二壓力為10公斤，第二溫度為80℃，且加溫時間為10小時。 Other embodiments of the foregoing embodiments include the following: the engaging step may include a screwing step of screwing the fixing member to the carrier and the dismounting plate to thereby tightly connect the carrier and the dismounting plate. Further, the aforementioned first ceramic abrasive body can be used for a chemical mechanical polishing, and the second ceramic abrasive body is used for a precision polishing. The second pressure was 10 kg, the second temperature was 80 ° C, and the heating time was 10 hours.
100、100a、100b‧‧‧嵌入式陶瓷磨削裝置 100, 100a, 100b‧‧‧ embedded ceramic grinding device
110‧‧‧環狀凹槽 110‧‧‧ annular groove
200、200a‧‧‧承載盤 200, 200a‧‧‧ carrier tray
210‧‧‧孔洞 210‧‧‧ holes
300‧‧‧第一陶瓷研磨體 300‧‧‧First ceramic grinding body
310‧‧‧第一環狀溝槽 310‧‧‧First annular groove
320‧‧‧第一直線溝槽 320‧‧‧First straight groove
400‧‧‧第二陶瓷研磨體 400‧‧‧Second ceramic grinding body
410‧‧‧第二環狀溝槽 410‧‧‧Second annular groove
420‧‧‧第二直線溝槽 420‧‧‧Second straight groove
500‧‧‧拆卸板 500‧‧‧Disassembly board
510‧‧‧第一連接面 510‧‧‧ first connection surface
520‧‧‧第二連接面 520‧‧‧second connection surface
530‧‧‧螺孔 530‧‧‧ screw hole
600‧‧‧固定件 600‧‧‧Fixed parts
700、700a‧‧‧嵌入式陶瓷磨削裝置之製造方法 700, 700a‧‧‧Method for manufacturing embedded ceramic grinding device
S12、S22‧‧‧研磨體成形步驟 S12, S22‧‧‧ grinding body forming steps
S122、S222‧‧‧混合步驟 S122, S222‧‧‧ mixing steps
S124、S224‧‧‧第一加壓步驟 S124, S224‧‧‧First pressurization step
S126、S226‧‧‧第一加溫步驟 S126, S226‧‧‧ first warming step
S14、S24‧‧‧接合步驟 S14, S24‧‧‧ joint steps
S142、S242‧‧‧塗佈步驟 S142, S242‧‧‧ coating step
S144、S244‧‧‧第二加壓步驟 S144, S244‧‧‧ second pressurization step
S146、S246‧‧‧第二加溫步驟 S146, S246‧‧‧second heating step
S26‧‧‧螺鎖步驟 S26‧‧‧ screw lock step
D1‧‧‧第一高度 D1‧‧‧ first height
D2‧‧‧第二高度 D2‧‧‧second height
第1A圖係繪示本發明一實施例之嵌入式陶瓷磨削裝置的立體示意圖。 1A is a perspective view showing an embedded ceramic grinding device according to an embodiment of the present invention.
第1B圖係繪示第1A圖之嵌入式陶瓷磨削裝置的分解圖。 Fig. 1B is an exploded view showing the embedded ceramic grinding device of Fig. 1A.
第1C圖係繪示第1A圖之嵌入式陶瓷磨削裝置的俯視圖。 Fig. 1C is a plan view showing the embedded ceramic grinding apparatus of Fig. 1A.
第1D圖係繪示第1C圖之剖線1d-1d的剖視圖。 Fig. 1D is a cross-sectional view showing a section line 1d-1d of Fig. 1C.
第2A圖係繪示本發明另一實施例之嵌入式陶瓷磨削裝置 的立體示意圖。 2A is a perspective view of an embedded ceramic grinding device according to another embodiment of the present invention. A three-dimensional diagram.
第2B圖係繪示第2A圖之嵌入式陶瓷磨削裝置的分解圖。 Figure 2B is an exploded view of the embedded ceramic grinding apparatus of Figure 2A.
第2C圖係繪示第2A圖之嵌入式陶瓷磨削裝置的俯視圖。 Fig. 2C is a plan view showing the embedded ceramic grinding device of Fig. 2A.
第2D圖係繪示第2C圖之剖線2d-2d的剖視圖。 Fig. 2D is a cross-sectional view showing a section line 2d-2d of Fig. 2C.
第3A圖係繪示本發明又一實施例之嵌入式陶瓷磨削裝置的立體示意圖。 3A is a perspective view showing an embedded ceramic grinding device according to still another embodiment of the present invention.
第3B圖係繪示第3A圖之嵌入式陶瓷磨削裝置的俯視圖。 Fig. 3B is a plan view showing the embedded ceramic grinding device of Fig. 3A.
第3C圖係繪示第3B圖之剖線3c-3c的剖視圖。 Fig. 3C is a cross-sectional view showing a section line 3c-3c of Fig. 3B.
第4圖係繪示本發明一實施例之嵌入式陶瓷磨削裝置之製造方法的流程示意圖。 4 is a flow chart showing a method of manufacturing an embedded ceramic grinding device according to an embodiment of the present invention.
第5圖係繪示本發明另一實施例之嵌入式陶瓷磨削裝置之製造方法的流程示意圖。 Figure 5 is a flow chart showing a method of manufacturing an embedded ceramic grinding device according to another embodiment of the present invention.
以下將參照圖式說明本發明之複數個實施例。為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施例中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之；並且重複之元件將可能使用相同的編號表示之。 Hereinafter, a plurality of embodiments of the present invention will be described with reference to the drawings. For the sake of clarity, many practical details will be explained in the following description. However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are illustrated in the drawings in a simplified schematic manner, and the repeated elements may be represented by the same reference numerals.
請一併參閱第1A~1D圖。第1A圖係繪示本發明一實施例之嵌入式陶瓷磨削裝置100的立體示意圖。第1B圖係繪示第1A圖之嵌入式陶瓷磨削裝置100的分 解圖。第1C圖係繪示第1A圖之嵌入式陶瓷磨削裝置100的俯視圖。第1D圖係繪示第1C圖之剖線1d-1d的剖視圖。如圖所示，嵌入式陶瓷磨削裝置100包含一旋轉運作的承載盤200、第一陶瓷研磨體300以及第二陶瓷研磨體400。 Please refer to Figures 1A~1D together. FIG. 1A is a perspective view showing an embedded ceramic grinding apparatus 100 according to an embodiment of the present invention. Figure 1B shows the division of the embedded ceramic grinding device 100 of Figure 1A. Solution. Fig. 1C is a plan view showing the embedded ceramic grinding apparatus 100 of Fig. 1A. Fig. 1D is a cross-sectional view showing a section line 1d-1d of Fig. 1C. As shown, the embedded ceramic grinding apparatus 100 includes a rotationally operated carrier disk 200, a first ceramic abrasive body 300, and a second ceramic abrasive body 400.
承載盤200呈圓形且受一轉動裝置(未示於圖中)控制旋轉，承載盤200由金屬製成，而本實施例為鋁合金。由於轉動裝置為習知技術，故不再贅述。此外，承載盤200具有一凹槽，此凹槽用以置放第一陶瓷研磨體300與第二陶瓷研磨體400。 The carrier tray 200 has a circular shape and is controlled to rotate by a rotating device (not shown). The carrier tray 200 is made of metal, and the embodiment is an aluminum alloy. Since the rotating device is a conventional technique, it will not be described again. Further, the carrier tray 200 has a recess for locating the first ceramic abrasive body 300 and the second ceramic abrasive body 400.
第一陶瓷研磨體300亦呈圓形而設於承載盤200的中央，且第一陶瓷研磨體300具有第一高度D1、一第一環狀溝槽310及八條第一直線溝槽320。此第一陶瓷研磨體300用於化學機械拋光(Chemical Mechanical Polishing；CMP)，且第一環狀溝槽310與第一直線溝槽320彼此垂直相交。 The first ceramic polishing body 300 is also circularly disposed at the center of the carrier 200, and the first ceramic polishing body 300 has a first height D1, a first annular groove 310, and eight first linear grooves 320. The first ceramic abrasive body 300 is used for chemical mechanical polishing (CMP), and the first annular groove 310 and the first linear groove 320 perpendicularly intersect each other.
第二陶瓷研磨體400設於承載盤200上且呈圓環形，第二陶瓷研磨體400環繞第一陶瓷研磨體300之外側。第二陶瓷研磨體400與第一陶瓷研磨體300之材質相異且相隔一間隙，此間隙讓第一陶瓷研磨體300與第二陶瓷研磨體400之間形成一環狀凹槽110，環狀凹槽110的寬度等於間隙。另外，第二陶瓷研磨體400具有一第二高度D2、第二環狀溝槽410與八條第二直線溝槽420，其中第二高度D2小於第一高度D1。第二陶瓷研磨體400 用於精密研磨(Lapping)。而第二環狀溝槽410與第二直線溝槽420彼此垂直相交，且八條第二直線溝槽420分別對應銜接八條第一直線溝槽320而形成散射形狀。第一環狀溝槽310、第一直線溝槽320、第二環狀溝槽410以及第二直線溝槽420係用以儲存研磨液，儲存之研磨液能夠針對工件(例如晶圓)再次進行研磨，可提升效率及增加表面粗糙度。本實施例之研磨液使用純水，且研磨液流量為1000ml/hr。至於第一陶瓷研磨體300、第二陶瓷研磨體400與承載盤200之間的連接方式一般係透過黏著劑、焊接或嵌接之技術，由於這些技術為習知技術，故不再贅述。藉此，本發明利用高低差之雙陶瓷研磨體在不更換陶瓷研磨體與承載盤200的條件下完成精密研磨與化學機械拋光，不但可減少更換之加工工序，還可減少加工時間、加工成本以及提升加工效率。此外，嵌入式陶瓷磨削裝置100中位於外環的第二陶瓷研磨體400是用來進行精密研磨，其是以高切線速度快速地研磨碳化矽(SiC)晶圓，搭配次微米級鑽石可使晶圓表面精度表現提升。而嵌入式陶瓷磨削裝置100中位於內環的第一陶瓷研磨體300是用來進行化學機械拋光，其有較高之台階，能夠不被精密研磨產生之磨屑、副產物以及掉落之鑽石汙染。再者，本發明的嵌入式陶瓷磨削裝置100含有大接觸面積，能夠完整涵蓋2英吋以上之碳化矽晶圓，達成晶圓在研磨時降低內外圈移除率不均勻之目的。另外，第一陶瓷研磨體300與第二陶瓷研磨體400使用自製鑽石磨料做混料，自 製鑽石因其特性能夠提升陶瓷研磨體之自銳性，可增加碳化矽材料的移除率。詳細地說，鑽石本身熔點在華氏6900度，而其燃點於純氧中為720℃~800℃，在大氣中燃點為850℃~1000℃，所以鑽石在熔化之前會先於大氣中燒掉。一般傳統的鑽石表面結構穩定、硬度極高且表面較無刃角，不容易對硬脆材料產生移除作用。而本發明則是在鑽石表面做改質，將單晶鑽石放入高溫爐中，加熱至750℃~900℃之間，持續2~5個小時，較佳的實施例係加熱至800℃~875℃之間，持續3個小時，利用鑽石在大氣中的燃點，使鑽石表面的碳原子逐漸剝離。此種剝離現象會使鑽石表面結構產生缺陷，進而造成多種刃角，可稱之為結構多孔型鑽石。由於結構多孔型鑽石之刃角增多，其可提升刺入材料表面的能力，並增加材料移除率，而且此種結構多孔型鑽石因高溫改質後結構較為脆弱，其與被研磨物(即工件，通常為硬脆材料)交互作用後，缺陷處受到應力作用而產生應力集中，會破碎成更小顆粒鑽石，而小粒徑鑽石會藉由研磨液作用存在於被研磨物與研磨盤之間，並同時進行滾動摩擦以及微量移除，故可提升被研磨物的表面平坦度與表面粗糙度。 The second ceramic abrasive body 400 is disposed on the carrier disk 200 and has a circular shape, and the second ceramic abrasive body 400 surrounds the outer side of the first ceramic abrasive body 300. The material of the second ceramic polishing body 400 and the first ceramic polishing body 300 are different and separated by a gap, and the gap forms an annular groove 110 between the first ceramic polishing body 300 and the second ceramic polishing body 400. The width of the groove 110 is equal to the gap. In addition, the second ceramic polishing body 400 has a second height D2, a second annular groove 410 and eight second linear grooves 420, wherein the second height D2 is smaller than the first height D1. Second ceramic abrasive body 400 For precision grinding (Lapping). The second annular groove 410 and the second linear groove 420 intersect each other perpendicularly, and the eight second linear grooves 420 respectively engage the eight first linear grooves 320 to form a scattering shape. The first annular groove 310, the first linear groove 320, the second annular groove 410, and the second linear groove 420 are used for storing the polishing liquid, and the stored polishing liquid can be ground again for the workpiece (for example, the wafer). Increases efficiency and increases surface roughness. The polishing liquid of this example used pure water, and the flow rate of the polishing liquid was 1000 ml/hr. The connection between the first ceramic abrasive body 300, the second ceramic abrasive body 400 and the carrier tray 200 is generally a technique of transmitting adhesive, soldering or embedding. Since these techniques are conventional techniques, they will not be described again. Therefore, the present invention utilizes the double ceramic grinding body of the high and low difference to complete the precision grinding and the chemical mechanical polishing without replacing the ceramic grinding body and the carrier tray 200, thereby not only reducing the replacement processing process, but also reducing the processing time and the processing cost. And improve processing efficiency. In addition, the second ceramic abrasive body 400 in the outer ring of the embedded ceramic grinding device 100 is used for precision grinding, which rapidly grinds a silicon carbide (SiC) wafer at a high tangential speed, and is compatible with sub-micron diamonds. Improve wafer surface accuracy. The first ceramic grinding body 300 located in the inner ring of the embedded ceramic grinding device 100 is used for chemical mechanical polishing, which has a higher step, can be used without sharp grinding, by-products and falling. Diamond pollution. Furthermore, the embedded ceramic grinding device 100 of the present invention has a large contact area and can completely cover a silicon carbide wafer of 2 inches or more, thereby achieving the purpose of reducing the uneven removal rate of the inner and outer rings during polishing. In addition, the first ceramic abrasive body 300 and the second ceramic abrasive body 400 are made of a self-made diamond abrasive. Due to its characteristics, diamonds can enhance the self-sharpness of ceramic abrasive bodies and increase the removal rate of tantalum carbide materials. In detail, the diamond itself has a melting point of 6900 degrees Fahrenheit, and its ignition point is 720 ° C ~ 800 ° C in pure oxygen, and the burning point in the atmosphere is 850 ° C ~ 1000 ° C, so the diamond will burn before the atmosphere before melting. Generally, the traditional diamond surface structure is stable, the hardness is extremely high, and the surface is less angled, and it is not easy to remove the hard and brittle material. In the present invention, the surface of the diamond is modified, and the single crystal diamond is placed in a high temperature furnace and heated to between 750 ° C and 900 ° C for 2 to 5 hours. The preferred embodiment is heated to 800 ° C. Between 875 ° C for 3 hours, the use of diamonds in the atmosphere to ignite the carbon atoms on the surface of the diamond. This peeling phenomenon causes defects in the surface structure of the diamond, which in turn causes a variety of edge angles, which can be called a structural porous diamond. Due to the increased edge angle of the structural porous diamond, it can enhance the ability to penetrate the surface of the material and increase the material removal rate, and the structure of the porous diamond is weakened by the high temperature modification, and the object is After the interaction of the workpiece, usually a hard and brittle material, the stress is concentrated by stress and will be broken into smaller particles, and the small-diameter diamond will be present in the object to be ground and the grinding disk by the action of the slurry. The rolling friction and the slight removal are performed at the same time, so that the surface flatness and surface roughness of the object to be polished can be improved.
請一併參閱第2A~2D圖。第2A圖係繪示本發明另一實施例之嵌入式陶瓷磨削裝置100a的立體示意圖。第2B圖係繪示第2A圖之嵌入式陶瓷磨削裝置100a的分解圖。第2C圖係繪示第2A圖之嵌入式陶瓷磨削裝置100a的俯視圖。第2D圖係繪示第2C圖之剖線2d-2d的 剖視圖。如圖所示，嵌入式陶瓷磨削裝置100a包含一承載盤200a、一第一陶瓷研磨體300、一第二陶瓷研磨體400、一拆卸板500以及多個固定件600。 Please refer to the 2A~2D diagram together. 2A is a perspective view showing an embedded ceramic grinding device 100a according to another embodiment of the present invention. Fig. 2B is an exploded view showing the embedded ceramic grinding device 100a of Fig. 2A. Fig. 2C is a plan view showing the embedded ceramic grinding device 100a of Fig. 2A. Figure 2D shows the line 2d-2d of Figure 2C Cutaway view. As shown, the embedded ceramic grinding device 100a includes a carrier disk 200a, a first ceramic polishing body 300, a second ceramic polishing body 400, a detaching plate 500, and a plurality of fixing members 600.
配合參閱第1A圖，在第2A圖的嵌入式陶瓷磨削裝置100a中，第一陶瓷研磨體300、第二陶瓷研磨體400與第1A圖之第一陶瓷研磨體300、第二陶瓷研磨體400的結構相同，故均不再贅述。特別的是，嵌入式陶瓷磨削裝置100a更包含承載盤200a、拆卸板500以及固定件600，其中承載盤200a具有複數個孔洞210，各孔洞210上下貫穿承載盤200a之盤體。拆卸板500具有第一連接面510、第二連接面520以及複數個螺孔530，第一連接面510與第二連接面520彼此朝向相反，且螺孔530分別對應承載盤200a的孔洞210。第一連接面510連接於第一陶瓷研磨體300與第二陶瓷研磨體400，第二連接面520連接承載盤200a。本實施例之第一陶瓷研磨體300、第二陶瓷研磨體400與拆卸板500的第一連接面510之間的連接方式係透過黏著劑緊密黏著，其中黏著劑為環氧樹脂。此外，固定件600可拆卸地連接承載盤200a與拆卸板500，固定件600貫穿承載盤200a的孔洞210並螺接拆卸板500之螺孔530，藉以令承載盤200a與拆卸板500緊密地鎖接。由上述可知，本發明之嵌入式陶瓷磨削裝置100a利用兩個不同厚度的陶瓷研磨體結合一承載盤200之結構來完成精密研磨與化學機械拋光之兩種製程，因無須更換陶瓷研磨體或承載盤200，故能大幅 地減少加工時間、加工成本以及提升加工效率。此外，拆卸板500之第一連接面510係使用環氧樹脂將扇形的陶瓷研磨體黏著於拆卸板500上，經加熱加壓後環氧樹脂固化而使拆卸板500緊密連接與抓持陶瓷研磨體。而且拆卸板500的第二連接面520為可拆卸式，其使用固定件600(例如螺絲)鎖固拆卸板500與鋁合金承載盤200而實現嵌入式鑽石陶瓷磨削裝置(可拆卸陶瓷研磨體)，這種結構能夠提升研磨裝置的製作效率並增加拆換的便利性。 Referring to FIG. 1A, in the embedded ceramic grinding apparatus 100a of FIG. 2A, the first ceramic polishing body 300, the second ceramic polishing body 400, and the first ceramic polishing body 300 and the second ceramic polishing body of FIG. The structure of 400 is the same, so it will not be described again. In particular, the embedded ceramic grinding device 100a further includes a carrier tray 200a, a detaching plate 500, and a fixing member 600. The carrier disk 200a has a plurality of holes 210, and the holes 210 extend up and down through the disk body of the carrier disk 200a. The detaching plate 500 has a first connecting surface 510, a second connecting surface 520, and a plurality of screw holes 530. The first connecting surface 510 and the second connecting surface 520 are opposite to each other, and the screw holes 530 respectively correspond to the holes 210 of the carrying tray 200a. The first connection surface 510 is connected to the first ceramic polishing body 300 and the second ceramic polishing body 400, and the second connection surface 520 is connected to the carrier tray 200a. The first ceramic abrasive body 300, the second ceramic abrasive body 400 of the present embodiment and the first connecting surface 510 of the detaching plate 500 are connected to each other through an adhesive, wherein the adhesive is epoxy resin. In addition, the fixing member 600 detachably connects the carrier tray 200a and the detaching plate 500. The fixing member 600 penetrates the hole 210 of the carrier disk 200a and is screwed to the screw hole 530 of the detaching plate 500, so that the carrier disk 200a and the detaching plate 500 are tightly locked. Pick up. It can be seen from the above that the embedded ceramic grinding device 100a of the present invention uses two ceramic grinding bodies of different thicknesses in combination with a structure of a carrier plate 200 to perform two processes of precision grinding and chemical mechanical polishing, since it is not necessary to replace the ceramic grinding body or Carrying the disk 200, so it can be greatly Reduce processing time, processing costs and increase processing efficiency. In addition, the first connecting surface 510 of the disassembling plate 500 is adhered to the disassembling plate 500 by using epoxy resin, and the epoxy resin is cured by heating and pressing to make the disassembling plate 500 tightly connected and grip the ceramic grinding. body. Moreover, the second connecting surface 520 of the disassembling plate 500 is detachable, and the fixing diamond 600 (for example, a screw) is used to lock the disassembling plate 500 and the aluminum alloy carrying plate 200 to realize the embedded diamond ceramic grinding device (removable ceramic grinding body) This structure can improve the manufacturing efficiency of the polishing apparatus and increase the convenience of replacement.
請一併參閱第3A~3C圖。第3A圖係繪示本發明又一實施例之嵌入式陶瓷磨削裝置100b的立體示意圖。第3B圖係繪示第3A圖之嵌入式陶瓷磨削裝置100b的俯視圖。第3C圖係繪示第3B圖之剖線3c-3c的剖視圖。如圖所示，嵌入式陶瓷磨削裝置100b包含承載盤200、第一陶瓷研磨體300以及第二陶瓷研磨體400。此嵌入式陶瓷磨削裝置100b與第1A圖之嵌入式陶瓷磨削裝置100的差異在於嵌入式陶瓷磨削裝置100b之第一陶瓷研磨體300沒有第一環狀溝槽310與第二環狀溝槽410，且第一直線溝槽320與第二直線溝槽420的數量均為四條。當然，溝槽的位置、數量、形狀以及對應結構組合可依據不同的需求應用而製造。本實施例之嵌入式陶瓷磨削裝置100b形式較為簡單，其製造成本可進一步降低。 Please refer to Figures 3A~3C together. 3A is a perspective view showing an embedded ceramic grinding device 100b according to still another embodiment of the present invention. Fig. 3B is a plan view showing the embedded ceramic grinding device 100b of Fig. 3A. Fig. 3C is a cross-sectional view showing a section line 3c-3c of Fig. 3B. As shown, the embedded ceramic grinding apparatus 100b includes a carrier disk 200, a first ceramic abrasive body 300, and a second ceramic abrasive body 400. The difference between the embedded ceramic grinding device 100b and the embedded ceramic grinding device 100 of FIG. 1A is that the first ceramic grinding body 300 of the embedded ceramic grinding device 100b has no first annular groove 310 and a second annular shape. The groove 410, and the number of the first linear groove 320 and the second linear groove 420 are four. Of course, the position, number, shape, and corresponding structural combination of the grooves can be manufactured according to different needs. The embedded ceramic grinding device 100b of the present embodiment is relatively simple in form, and the manufacturing cost thereof can be further reduced.
請一併參閱第1A~1D圖、第3A~3C圖以及第4圖。第4圖係繪示本發明一實施例之嵌入式陶瓷磨削裝置之製造方法700的流程示意圖。如圖所示，此嵌入式 陶瓷磨削裝置之製造方法700係用以製造第1A~1D圖的嵌入式陶瓷磨削裝置100以及第3A~3C圖的嵌入式陶瓷磨削裝置100b。嵌入式陶瓷磨削裝置之製造方法700包含研磨體成形步驟S12與接合步驟S14。 Please refer to Figures 1A~1D, 3A~3C, and Figure 4. 4 is a flow chart showing a method 700 of manufacturing an embedded ceramic grinding device according to an embodiment of the present invention. As shown, this embedded The method 700 for manufacturing a ceramic grinding device is for manufacturing the embedded ceramic grinding device 100 of Figs. 1A to 1D and the embedded ceramic grinding device 100b of Figs. 3A to 3C. The manufacturing method 700 of the embedded ceramic grinding apparatus includes an abrasive body forming step S12 and a joining step S14.
研磨體成形步驟S12用以製造出第一陶瓷研磨體300與第二陶瓷研磨體400，研磨體成形步驟S12包含混合步驟S122、第一加壓步驟S124以及第一加溫步驟S126。其中混合步驟S122係混合一陶瓷粉末與一鑽石磨料而形成一第一混合磨料與一第二混合磨料。詳細地說，砂輪磨料的含量稱作「集中度」，集中度係以每單位體積所含鑽石重量的值來進行計算。例如：當集中度為150時，代表每一立方公分體積含有6.6克拉之鑽石磨料，亦等於每一立方公分體積含有37.5%體積鑽石磨料；當集中度為100時，代表每一立方公分中含有4.4克拉的鑽石磨料，亦等於每一立方公分的體積含有25%體積的鑽石磨料；若集中度為50時，則代表鑽石磨料所佔的體積為集中度100的一半，即為每一立方公分的體積含有12.5%體積的鑽石磨料。本發明之第一混合磨料係用於化學機械拋光，其集中度的較佳範圍為50~100，而本實施例的集中度為75，集中度為75係代表每一立方公分體積之混合磨料含有3.3克拉之鑽石磨料，亦等於每一立方公分體積之混合磨料含有18.75%體積鑽石磨料，至於其他的體積(81.25%)則為陶瓷粉末。而第二混合磨料係用於精密研磨，其集中度的較佳範圍為100~150，而本實施例的集中 度為125，集中度為125係代表每一立方公分體積之混合磨料含有5.5克拉之鑽石磨料，亦等於每一立方公分體積之混合磨料含有31.25%體積鑽石磨料，至於其他的體積(68.75%)則為陶瓷粉末。另外，第一加壓步驟S124係施加一第一壓力於第一混合磨料與第二混合磨料以分別形成一第一研磨碇與一第二研磨碇，第一壓力介於1公噸至2公噸之間，較佳的第一壓力範圍介於1公噸至1.5公噸之間。而第一加溫步驟S126則是施加一第一溫度於第一研磨碇與第二研磨碇以分別形成第一陶瓷研磨體300與第二陶瓷研磨體400，第一溫度介於750℃至900℃之間，而較佳的第一溫度範圍則介於800℃至875℃之間。其中第一陶瓷研磨體300用以化學機械拋光，第二陶瓷研磨體400則用於精密研磨。藉此，透過上述步驟流程可以製造出所需之陶瓷研磨體。 The polishing body forming step S12 is for manufacturing the first ceramic polishing body 300 and the second ceramic polishing body 400. The polishing body forming step S12 includes a mixing step S122, a first pressing step S124, and a first heating step S126. The mixing step S122 is to mix a ceramic powder and a diamond abrasive to form a first mixed abrasive and a second mixed abrasive. In detail, the content of the abrasive material of the grinding wheel is referred to as "concentration", and the concentration is calculated by the value of the weight of the diamond contained per unit volume. For example, when the concentration is 150, it means that each cubic centimeter volume contains 6.6 carats of diamond abrasive, which is equal to 37.5% of the volume of diamond abrasive per cubic centimeter volume; when the concentration is 100, it means that each cubic centimeter contains 4.4 carats of diamond abrasive, which is equal to 25% of the volume of diamond abrasive per cubic centimeter; if the concentration is 50, it means that the volume of diamond abrasive is half of the concentration of 100, that is, each cubic centimeter The volume contains 12.5% by volume of diamond abrasive. The first mixed abrasive of the present invention is used for chemical mechanical polishing, and the concentration thereof is preferably in the range of 50 to 100, and the concentration of the embodiment is 75, and the concentration is 75, representing the mixed abrasive of each cubic centimeter volume. Containing 3.3 carats of diamond abrasive, also equal to 18.75% by volume of diamond abrasive per cubic centimeter of mixed abrasive, and ceramic powder for other volumes (81.25%). The second mixed abrasive is used for precision grinding, and the concentration thereof is preferably in the range of 100 to 150, and the concentration of the embodiment is concentrated. The degree is 125, the concentration is 125, the representative abrasive of each cubic centimeter volume contains 5.5 carats of diamond abrasive, and the mixed abrasive of each cubic centimeter volume contains 31.25% volume of diamond abrasive, as for other volumes (68.75%) It is a ceramic powder. In addition, the first pressing step S124 applies a first pressure to the first mixed abrasive and the second mixed abrasive to form a first abrasive crucible and a second abrasive crucible, respectively, and the first pressure is between 1 metric ton and 2 metric ton. Preferably, the preferred first pressure range is between 1 metric ton and 1.5 metric ton. The first heating step S126 is to apply a first temperature to the first polishing crucible and the second polishing crucible to form the first ceramic abrasive body 300 and the second ceramic abrasive body 400, respectively, the first temperature is between 750 ° C and 900. Between ° C, and preferably the first temperature range is between 800 ° C and 875 ° C. The first ceramic abrasive body 300 is used for chemical mechanical polishing, and the second ceramic abrasive body 400 is used for precision grinding. Thereby, the desired ceramic abrasive body can be produced through the above-described procedure.
接合步驟S14包含塗佈步驟S142、第二加壓步驟S144以及第二加溫步驟S146。其中塗佈步驟S142係塗佈一黏著劑於承載盤200上。第二加壓步驟S144係將第一陶瓷研磨體300與第二陶瓷研磨體400對應連接承載盤200之黏著劑，並施加一第二壓力於第一陶瓷研磨體300與第二陶瓷研磨體400上，令第一陶瓷研磨體300、第二陶瓷研磨體400及承載盤200相互緊密接合。本實施例之第二壓力為10公斤。此外，第二加溫步驟S146則是施加一第二溫度於第一陶瓷研磨體300、第二陶瓷研磨體400及承載盤200，並靜置一加溫時間。其中第二溫度為 80℃，而加溫時間為10小時。藉此，本發明的製造方法透過特定的參數步驟緊固黏結陶瓷研磨體及承載盤200，並製造出高低不同之雙陶瓷研磨體連結承載盤200，其製程簡易且製造成本低廉。 The bonding step S14 includes a coating step S142, a second pressing step S144, and a second warming step S146. The coating step S142 applies an adhesive to the carrier tray 200. The second pressing step S144 connects the first ceramic abrasive body 300 and the second ceramic abrasive body 400 to the adhesive of the carrier disk 200, and applies a second pressure to the first ceramic abrasive body 300 and the second ceramic abrasive body 400. The first ceramic abrasive body 300, the second ceramic abrasive body 400, and the carrier tray 200 are brought into close contact with each other. The second pressure of this embodiment is 10 kg. In addition, the second heating step S146 applies a second temperature to the first ceramic polishing body 300, the second ceramic polishing body 400, and the carrier tray 200, and is allowed to stand for a warming time. Where the second temperature is 80 ° C, and the heating time is 10 hours. Thereby, the manufacturing method of the present invention fastens the bonded ceramic abrasive body and the carrier tray 200 through a specific parameter step, and manufactures the double ceramic abrasive body joint carrier tray 200 of different heights, which is simple in process and low in manufacturing cost.
請一併參閱第2A~2D圖與第5圖。第5圖係繪示本發明另一實施例之嵌入式陶瓷磨削裝置之製造方法700a的流程示意圖。如圖所示，此嵌入式陶瓷磨削裝置之製造方法700a係用以製造第2A~2D圖的嵌入式陶瓷磨削裝置100a。嵌入式陶瓷磨削裝置之製造方法700a包含研磨體成形步驟S22、接合步驟S24以及螺鎖步驟S26。 Please refer to Figures 2A~2D and Figure 5 together. FIG. 5 is a schematic flow chart showing a manufacturing method 700a of an embedded ceramic grinding device according to another embodiment of the present invention. As shown, the method 700a for manufacturing an embedded ceramic grinding apparatus is used to manufacture the embedded ceramic grinding apparatus 100a of Figs. 2A-2D. The manufacturing method 700a of the embedded ceramic grinding apparatus includes an abrasive body forming step S22, a joining step S24, and a screw locking step S26.
研磨體成形步驟S22包含混合步驟S222、第一加壓步驟S224以及第一加溫步驟S226，其中混合步驟S222係混合一陶瓷粉末與一鑽石磨料而形成一第一混合磨料與一第二混合磨料。第一加壓步驟S224係施加一第一壓力於第一混合磨料與第二混合磨料以分別形成一第一研磨碇與一第二研磨碇。第一加溫步驟S226係施加一第一溫度於第一研磨碇與第二研磨碇以分別形成第一陶瓷研磨體300與第二陶瓷研磨體400。再者，接合步驟S24包含塗佈步驟S242、第二加壓步驟S244以及第二加溫步驟S246，其中塗佈步驟S242係塗佈一黏著劑於拆卸板500之第一連接面510上。而第二加壓步驟S244係將第一陶瓷研磨體300與第二陶瓷研磨體400對應連接拆卸板500之黏著劑，並施加一第二壓力於第一陶瓷研磨體300與第二陶瓷研磨體400上，令第一陶瓷研磨體300、第二陶瓷 研磨體400及拆卸板500相互緊密接合。第二壓力為10公斤。另外，第二加溫步驟S246係施加一第二溫度於第一陶瓷研磨體300、第二陶瓷研磨體400及拆卸板500，並靜置一加溫時間。其中第二溫度為80℃，且加溫時間為10小時。此外，螺鎖步驟S26係螺鎖固定件600於承載盤200與拆卸板500，藉以令承載盤200與拆卸板500之第二連接面520緊密地連接。藉此，本發明之製造方法透過特定的參數步驟可將陶瓷研磨體及拆卸板500緊固黏結，並將拆卸板500與承載盤200螺鎖定位，所製造出來的雙陶瓷研磨體擁有不同的高低落差。再者，本發明之製造方法非常適合應用於雙陶瓷研磨體或多陶瓷研磨體之製作，而且具有製程簡易及低製造成本之效。 The grinding body forming step S22 includes a mixing step S222, a first pressing step S224, and a first heating step S226, wherein the mixing step S222 is to mix a ceramic powder with a diamond abrasive to form a first mixed abrasive and a second mixed abrasive. . The first pressing step S224 applies a first pressure to the first mixed abrasive and the second mixed abrasive to form a first abrasive crucible and a second abrasive crucible, respectively. The first heating step S226 applies a first temperature to the first polishing crucible and the second polishing crucible to form the first ceramic abrasive body 300 and the second ceramic abrasive body 400, respectively. Furthermore, the bonding step S24 includes a coating step S242, a second pressing step S244, and a second heating step S246, wherein the applying step S242 applies an adhesive on the first connecting surface 510 of the detaching plate 500. The second pressing step S244 connects the first ceramic polishing body 300 and the second ceramic polishing body 400 to the adhesive of the detaching plate 500, and applies a second pressure to the first ceramic polishing body 300 and the second ceramic polishing body. 400, the first ceramic grinding body 300, the second ceramic The abrasive body 400 and the detaching plate 500 are in close contact with each other. The second pressure is 10 kg. In addition, the second heating step S246 applies a second temperature to the first ceramic polishing body 300, the second ceramic polishing body 400, and the detaching plate 500, and is allowed to stand for a heating time. The second temperature was 80 ° C, and the heating time was 10 hours. In addition, the screw locking step S26 is a screw locking fixture 600 on the carrier tray 200 and the removal plate 500, so that the carrier tray 200 and the second connection surface 520 of the removal plate 500 are tightly connected. Thereby, the manufacturing method of the present invention can fasten and bond the ceramic grinding body and the disassembling plate 500 through a specific parameter step, and the disassembling plate 500 and the carrier plate 200 are screwed, and the manufactured double ceramic grinding body has different High and low drop. Furthermore, the manufacturing method of the present invention is very suitable for the production of a double ceramic abrasive body or a multi-ceramic abrasive body, and has the advantages of simple process and low manufacturing cost.
由上述實施方式可知，本發明具有下列優點：其一，本發明的嵌入式陶瓷磨削裝置含有大接觸面積，能夠完整涵蓋2英吋以上之碳化矽晶圓，達成晶圓在研磨時降低內外圈移除率不均勻之目的。其二，透過外環的第二陶瓷研磨體進行精密研磨，不但可快速地研磨工件，還可提升晶圓表面精度。其三，利用內環的第一陶瓷研磨體進行化學機械拋光，其有較高之台階，能夠不被精密研磨產生之磨屑、副產物以及掉落之鑽石汙染。其四，第一陶瓷研磨體與第二陶瓷研磨體使用自製的鑽石磨料做混料，其特性能夠提升陶瓷研磨體之自銳性，並可增加碳化矽材料的移除率。其五，利用高低差之雙陶瓷研磨體在不更換陶瓷研磨體與承載盤的條件下完成精密研磨與化學機械拋 光，不但可減少更換之加工工序，還可減少加工時間、加工成本以及提升加工效率。其六，儲存於溝槽的研磨液能夠針對工件再次進行研磨，可提升效率及增加表面粗糙度。其七，可拆卸式的結構能夠提升研磨裝置的製作效率並增加拆換的便利性。 It can be seen from the above embodiments that the present invention has the following advantages: First, the embedded ceramic grinding device of the present invention has a large contact area and can completely cover a silicon carbide wafer of 2 inches or more, thereby achieving a reduction in the inside and outside of the wafer during grinding. The purpose of the ring removal rate is uneven. Secondly, precision grinding through the second ceramic grinding body of the outer ring not only can quickly grind the workpiece, but also improve the surface precision of the wafer. Thirdly, the first ceramic grinding body of the inner ring is used for chemical mechanical polishing, which has a higher step and can be contaminated by the grinding debris, by-products and falling diamonds produced by precision grinding. Fourth, the first ceramic abrasive body and the second ceramic abrasive body are made of a self-made diamond abrasive, and the characteristics thereof can enhance the self-sharpness of the ceramic abrasive body and increase the removal rate of the tantalum carbide material. Fifthly, the double ceramic grinding body with high and low difference is used to complete precision grinding and chemical mechanical polishing without replacing the ceramic grinding body and the carrier plate. Light can not only reduce the processing steps of replacement, but also reduce processing time, processing cost and improve processing efficiency. Sixth, the slurry stored in the groove can be ground again for the workpiece to improve efficiency and increase surface roughness. Seventh, the detachable structure can improve the manufacturing efficiency of the grinding device and increase the convenience of replacement.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
100a‧‧‧嵌入式陶瓷磨削裝置 100a‧‧‧Embedded ceramic grinding device
110‧‧‧環狀凹槽 110‧‧‧ annular groove
200a‧‧‧承載盤 200a‧‧‧ carrying tray
210‧‧‧孔洞 210‧‧‧ holes
300‧‧‧第一陶瓷研磨體 300‧‧‧First ceramic grinding body
310‧‧‧第一環狀溝槽 310‧‧‧First annular groove
400‧‧‧第二陶瓷研磨體 400‧‧‧Second ceramic grinding body
410‧‧‧第二環狀溝槽 410‧‧‧Second annular groove
500‧‧‧拆卸板 500‧‧‧Disassembly board
510‧‧‧第一連接面 510‧‧‧ first connection surface
520‧‧‧第二連接面 520‧‧‧second connection surface
530‧‧‧螺孔 530‧‧‧ screw hole
600‧‧‧固定件 600‧‧‧Fixed parts
D1‧‧‧第一高度 D1‧‧‧ first height
D2‧‧‧第二高度 D2‧‧‧second height
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| CN110076686A (en) * | 2019-05-31 | 2019-08-02 | 蓝思科技（长沙）有限公司 | A kind of non-planar key slicing apparatus and partition machining method |
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| Publication number | Publication date |
|---|---|
| TW201831270A (en) | 2018-09-01 |
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