TWI601959B - Proximity patch for probe card, method for manufacturing patch for probe card and probe card - Google Patents
Proximity patch for probe card, method for manufacturing patch for probe card and probe card Download PDFInfo
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- TWI601959B TWI601959B TW102120288A TW102120288A TWI601959B TW I601959 B TWI601959 B TW I601959B TW 102120288 A TW102120288 A TW 102120288A TW 102120288 A TW102120288 A TW 102120288A TW I601959 B TWI601959 B TW I601959B
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本發明係關於一種用於半導體裝置或半導體晶片之晶圓試驗之探針卡，尤其關於一種晶圓批量測試用之多針之探針卡。 The present invention relates to a probe card for wafer testing of semiconductor devices or semiconductor wafers, and more particularly to a multi-needle probe card for wafer batch testing.
於形成在晶圓上的半導體裝置或半導體晶片的試驗步驟中，使用探針卡而接觸於晶圓上之半導體裝置的電極墊，施加並收集訊號，實施試驗。先前以來，為此，對於設置在探測裝置之平台上的晶圓，自上方使探針卡區分地與晶圓接觸而實施試驗，且該探針卡係採用使用鎢等之探針的懸臂方式、及使用彎曲針之矩陣方式等。於先前之使用探針卡的試驗中，探針能接觸之晶圓上之半導體晶片為整個晶圓的一部分，因此一面區分地接觸一面以探測裝置依序在晶圓上移動從而實施整個晶圓的試驗。 In the test step of the semiconductor device or the semiconductor wafer formed on the wafer, the probe card is used to contact the electrode pads of the semiconductor device on the wafer, and signals are applied and collected to carry out the test. For this reason, for the wafer disposed on the platform of the detecting device, the probe card is differentially contacted with the wafer from above to perform the test, and the probe card is in a cantilever manner using a probe such as tungsten. And a matrix method using curved needles. In the previous test using the probe card, the semiconductor wafer on the wafer that the probe can contact is a part of the entire wafer, so that the opposite side touches one side and the detecting device sequentially moves on the wafer to implement the entire wafer. Test.
對此，存在藉由多針之探針卡減少該區分數而提高試驗效率的強烈需求。例如，專利文獻1或專利文獻2所記載之附凸塊之膜片方式的探針卡具有與該需求對應的、可實現具有數萬個多針的探針卡的構造。 In this regard, there is a strong need to increase the efficiency of the test by reducing the score of the zone by a multi-needle probe card. For example, the probe card type diaphragm-attached probe card described in Patent Document 1 or Patent Document 2 has a structure capable of realizing a probe card having tens of thousands of multi-pins corresponding to the demand.
作為第1先前形態，使用圖16對專利文獻1所記載之附凸塊之膜片方式之探針卡的構造進行說明。於圖16中，201為膜凸塊(附凸塊之膜片)，於黏貼在剛性環203上的聚醯亞胺片材(絕緣膜)205上形成有凸塊207、短路部209及內面電極部211，且該凸塊207具有與作為晶圓 上之引出端子的電極墊接觸的作用。213為異方性導電膜，其係藉由在由橡膠材形成之彈性膜215上形成藉由在厚度方向上壓縮而於厚度方向上通電之導電路217而形成，並具有吸收晶圓之電極墊或凸塊207等之高度偏差，對凸塊207實施均勻的接觸壓的作用。219為配線基板，其係藉由作為基材之厚度3~5mm之絕緣性基板221、端子223、外部端子225及將其間連接的引出線227而構成，且具有將自凸塊207經由導電路217而傳遞至端子223之訊號引出至外部之作用。此處，凸塊207、短路部209、內面電極部211、導電路217及端子223係形成於與作為試驗對象之晶圓上之引出端子即電極墊相對應之位置上(更具體而言，係於電極墊上水平方向之位置一致之狀態)，可根據需要準備數千至數萬個。 As a first prior art, the structure of the probe card of the diaphragm type with the bump described in the patent document 1 is demonstrated using FIG. In FIG. 16, 201 is a film bump (a film with a bump), and a bump 207, a short-circuit portion 209, and a pin are formed on the polyimide film (insulating film) 205 adhered to the rigid ring 203. a surface electrode portion 211, and the bump 207 has a wafer The role of the electrode pad contact of the lead terminal. 213 is an anisotropic conductive film formed by forming a conductive circuit 217 which is energized in the thickness direction by compression in the thickness direction on the elastic film 215 formed of a rubber material, and has an electrode for absorbing the wafer. The height deviation of the pad or the bump 207 or the like exerts a uniform contact pressure on the bump 207. 219 is a wiring board which is constituted by an insulating substrate 221 having a thickness of 3 to 5 mm as a base material, a terminal 223, an external terminal 225, and a lead wire 227 connected therebetween, and has a self-bump 207 via a conductive circuit. The signal transmitted to the terminal 223 is taken out to the outside. Here, the bump 207, the short-circuit portion 209, the inner surface electrode portion 211, the conductive circuit 217, and the terminal 223 are formed at positions corresponding to the electrode pads which are the lead terminals on the wafer to be tested (more specifically, , in a state in which the positions on the electrode pads are horizontally aligned, and thousands to tens of thousands can be prepared as needed.
其次，使用圖17~圖19對膜凸塊201之製造方法進行說明。首先，如圖17所示，對於將厚度約25μm之聚醯亞胺片材205黏貼在厚度約18μm之銅箔229上的材料而言，對聚醯亞胺片材205照射雷射而形成直徑約30μm的小徑孔231(第1步驟)。其次。於銅箔229之內面塗布保護阻劑233，並將鍍敷電極連接於銅箔229從而進行鎳之電鍍。關於鍍敷，若以填埋小徑孔231之方式形成短路部209，進而到達聚醯亞胺片材205之表面，則於全部方向上同樣地擴大而呈半球狀前進，從而形成凸塊207(第2步驟，參照圖18)。鍍敷係進行至凸塊207之高度為10~20μm為止。其次，除去塗布於銅箔229之內面的保護阻劑233，並重新塗布阻劑而使內面電極部之圖案感光，藉由銅箔229之蝕刻而形成內面電極部211。而且，除去阻劑，最後將聚醯亞胺片材205黏貼於剛性環203上並構成膜凸塊201(第3步驟，參照圖19)。 Next, a method of manufacturing the film bump 201 will be described with reference to FIGS. 17 to 19. First, as shown in Fig. 17, for a material in which a polyimide film 205 having a thickness of about 25 μm is adhered to a copper foil 229 having a thickness of about 18 μm, the polyimide film 205 is irradiated with a laser to form a diameter. A small diameter hole 231 of about 30 μm (first step). Second. A protective resist 233 is applied to the inner surface of the copper foil 229, and the plating electrode is connected to the copper foil 229 to perform nickel plating. In the plating, when the short-circuit portion 209 is formed so as to fill the small-diameter hole 231 and reaches the surface of the polyimide film 205, it is similarly expanded in all directions and proceeds in a hemispherical shape to form the bump 207. (The second step, see Fig. 18). The plating is performed until the height of the bump 207 is 10 to 20 μm. Next, the protective resist 233 applied to the inner surface of the copper foil 229 is removed, and the resist is recoated to expose the pattern of the inner surface electrode portion, and the inner surface electrode portion 211 is formed by etching of the copper foil 229. Further, the resist is removed, and finally the polyimide film 205 is adhered to the rigid ring 203 to constitute the film bump 201 (third step, see Fig. 19).
其次，作為第2先前形態使用圖20~圖29對專利文獻2所記載之附凸塊膜方式之探針卡的構造進行說明。 Next, the structure of the probe card with the bump film type described in Patent Document 2 will be described as a second prior art using FIGS. 20 to 29 .
該探針卡具有如圖20所示之框架板301。框架板301具有與檢查對象之晶圓之尺寸大致相同之200mm~300mm的直徑，且厚度例如為40μm~80μm。又，為了可排除伴隨著溫度變化之位置偏移的影響，框架板301具有接近晶圓之熱膨脹係數或線熱膨脹係數，且框架板301之熱膨脹係數或線熱膨脹係數例如為0~1×10-5/℃。進而，於框架板301上形成有與晶圓上所形成之半導體晶片相對應地貫通於厚度方向之複數個貫通孔或貫通穴303，且其等係藉由蝕刻形成。 The probe card has a frame plate 301 as shown in FIG. The frame plate 301 has a diameter of approximately 200 mm to 300 mm which is substantially the same as the size of the wafer to be inspected, and has a thickness of, for example, 40 μm to 80 μm. Moreover, in order to eliminate the influence of the positional shift accompanying the temperature change, the frame plate 301 has a thermal expansion coefficient or a linear thermal expansion coefficient close to the wafer, and the thermal expansion coefficient or the linear thermal expansion coefficient of the frame plate 301 is, for example, 0 to 1×10 − 5 / ° C. Further, a plurality of through holes or through holes 303 penetrating in the thickness direction corresponding to the semiconductor wafer formed on the wafer are formed on the frame plate 301, and are formed by etching.
圖21表示形成於框架板301上之貫通穴303周邊的構造，於支持在貫通穴303周邊的狀態下，配置有異方性導電膜305與接點膜(附凸塊之膜片)307。異方性導電膜305係藉由彈性膜309、及設置於該彈性膜309上的導電路311構成，且彈性膜309係藉由厚度80μm之橡膠材料形成，且外周(313)係固定於框架板301之貫通穴303周邊，並具有保持導電路311的作用。 21 shows a structure formed around the through hole 303 of the frame plate 301. The anisotropic conductive film 305 and the contact film (the film with the bumps) 307 are disposed in a state of being supported around the through hole 303. The anisotropic conductive film 305 is composed of an elastic film 309 and a conductive circuit 311 provided on the elastic film 309, and the elastic film 309 is formed of a rubber material having a thickness of 80 μm, and the outer periphery (313) is fixed to the frame. The plate 301 has a periphery of the through hole 303 and has a function of holding the guiding circuit 311.
導電路311係於厚度130μm之彈性膜中包含多個金屬粒子，且具有若自厚度方向施加壓力則變形從而藉由金屬粒子彼此之接觸而於上下方向上通電的功能。 The conductive circuit 311 is formed of a plurality of metal particles in an elastic film having a thickness of 130 μm, and has a function of being deformed by applying pressure from a thickness direction and being electrically connected in the vertical direction by contact of the metal particles.
另一方面，接點膜307係藉由絕緣膜315、形成於絕緣膜315之表面側的凸塊317、及導電電極319構成。絕緣膜315係以厚度25μm之聚醯亞胺形成，且藉由接著劑321將其周邊部或周邊部內面固定於框架板301上。於絕緣膜315之表面側藉由鎳形成有直徑高度均約20μm的凸 塊317，且具有與晶圓之半導體晶片之電極墊接觸的作用。進而，於絕緣膜315上，與凸塊317連接之導電電極319形成於絕緣膜315之表面及膜內，並具有連接凸塊317與異方性導電膜305之導電路311的作用。323為具有與晶圓相對應之大小的配線基板，且係藉由作為基材之厚度3~5mm之絕緣性基板325、端子327、外部端子329及引出線331構成，且具有將自凸塊317經由導電電極319、導電路311而傳遞至端子327之訊號自外部端子329引出至外部的作用。 On the other hand, the contact film 307 is composed of an insulating film 315, a bump 317 formed on the surface side of the insulating film 315, and a conductive electrode 319. The insulating film 315 is formed of a polyimide having a thickness of 25 μm, and the peripheral portion or the inner surface of the peripheral portion thereof is fixed to the frame plate 301 by the adhesive 321. On the surface side of the insulating film 315, a bump having a diameter of about 20 μm is formed by nickel. Block 317 has the effect of contacting the electrode pads of the semiconductor wafer of the wafer. Further, on the insulating film 315, the conductive electrode 319 connected to the bump 317 is formed on the surface and the film of the insulating film 315, and has a function of connecting the bump 317 and the conductive circuit 311 of the anisotropic conductive film 305. 323 is a wiring board having a size corresponding to a wafer, and is composed of an insulating substrate 325 having a thickness of 3 to 5 mm as a substrate, a terminal 327, an external terminal 329, and a lead line 331, and has a self-bump. The signal transmitted to the terminal 327 via the conductive electrode 319 and the conductive circuit 311 is taken out from the external terminal 329 to the outside.
以下，使用圖22~圖29表示接點膜307之製造方法。 Hereinafter, a method of manufacturing the contact film 307 will be described with reference to FIGS. 22 to 29.
於圖22中，333為貼合片材，且於其中形成多個接點膜307。圖23表示貼合片材之剖面，且作為貼合片材333，使用對於作為絕緣膜315之集合體之厚25μm的聚醯亞胺片材335貼合厚4μm的銅箔337而成者。而且，於貼合片材333上黏貼阻劑339，並為了於與形成在晶圓上之半導體晶片之電極墊相對應之位置上形成導電電極，而使用光掩膜於阻劑339上形成圖案。其次，將貼合片材333浸於聚醯亞胺蝕刻液中，將形成於阻劑339上的圖案作為掩膜而於聚醯亞胺片材335上形成導電電極孔341(第1步驟，參照圖24)。於此情形時，藉由聚醯亞胺所具有的各向異性，如圖24所示對片材面以50。之角度以研缽狀(剖面梯形)進行蝕刻。其次，剝離阻劑339，將銅箔337作為鍍敷電極進行鎳鍍敷，並如圖25所示，使鎳於導電電極孔341中成長至聚醯亞胺片材335之厚度左右，形成導電電極319(第2步驟)。若形成導電電極319，則將阻劑342黏貼於銅箔337上，並為了於與半導體晶片之電極墊相對應之位置上形成凸塊317而使用光掩膜於阻劑342上形成凸塊孔343(第3步驟，參照圖26)。進而，如圖27所示， 將銅箔337作為鍍敷電極進行鎳鍍敷，於不超出阻劑342之厚度的範圍內，使鎳於凸塊孔343中成長而形成凸塊317(第4步驟)。而且，剝離阻劑342，黏貼阻劑345，使用光掩膜於阻劑345上形成圖案，並於此狀態下將銅浸於進行蝕刻之蝕刻液中，對銅箔337進行蝕刻，從而於凸塊317之周圍形成構成導電電極319之一部分的導電電極基底347(第5步驟、圖28)。其後，剝離阻劑345，對圖22中之長方形狀部分進行裁剪、分割從而形成接點膜307。如圖29所示，將接著劑321塗布於自其中選出的良好的接點膜307上，使用實裝機如圖21般搭載於框架板301之各貫通穴303中，進而藉由將框架板301全體配置於配線基板323之上方或表面側而完成探針卡。 In Fig. 22, 333 is a bonded sheet, and a plurality of contact films 307 are formed therein. FIG. 23 shows a cross section of the bonded sheet, and the laminated sheet 333 is formed by bonding a copper foil 337 having a thickness of 4 μm to a polyimide film 335 having a thickness of 25 μm as an aggregate of the insulating film 315. Further, a resist 339 is adhered to the bonding sheet 333, and a conductive electrode is formed at a position corresponding to the electrode pad of the semiconductor wafer formed on the wafer, and a photomask is used to form a pattern on the resist 339. . Next, the bonding sheet 333 is immersed in the polyimide etchant, and the conductive electrode hole 341 is formed on the polyimide film 335 by using the pattern formed on the resist 339 as a mask (first step, Refer to Figure 24). In this case, by the anisotropy possessed by the polyimide, as shown in Fig. 24, the sheet surface was 50. The angle is etched in a mortar shape (cross-section trapezoid). Next, the resist 339 is peeled off, and the copper foil 337 is plated as a plating electrode for nickel plating, and as shown in FIG. 25, nickel is grown in the conductive electrode hole 341 to the thickness of the polyimide film 335 to form a conductive layer. Electrode 319 (second step). If the conductive electrode 319 is formed, the resist 342 is adhered to the copper foil 337, and a bump is formed on the resist 342 by using a photomask in order to form the bump 317 at a position corresponding to the electrode pad of the semiconductor wafer. 343 (3rd step, see Fig. 26). Further, as shown in FIG. The copper foil 337 is plated with nickel as a plating electrode, and nickel is grown in the bump hole 343 to form the bump 317 within a range not exceeding the thickness of the resist 342 (fourth step). Further, the resist 342 is peeled off, the resist 345 is adhered, a pattern is formed on the resist 345 using a photomask, and in this state, copper is immersed in the etching liquid for etching, and the copper foil 337 is etched to be convex. A conductive electrode substrate 347 constituting a part of the conductive electrode 319 is formed around the block 317 (the fifth step, FIG. 28). Thereafter, the resist 345 is peeled off, and the rectangular portion in FIG. 22 is cut and divided to form a contact film 307. As shown in Fig. 29, the adhesive 321 is applied onto a good contact film 307 selected therefrom, and is mounted on each of the through holes 303 of the frame plate 301 as shown in Fig. 21, and the frame plate 301 is further used. The probe card is completed by being entirely disposed above or on the surface side of the wiring substrate 323.
[先前技術文獻] [Previous Technical Literature]
[專利文獻1 [Patent Document 1
專利文獻1：日本專利特開平10-178074號 Patent Document 1: Japanese Patent Laid-Open No. 10-178074
專利文獻2：日本專利特開2011-022001號 Patent Document 2: Japanese Patent Laid-Open No. 2011-02-2001
第1先前形態所示之探針卡之構成中，由於凸塊之形狀為半球狀，凸塊之前端不尖銳，因此於與晶圓之電極墊之接觸時需要較大壓力。 In the configuration of the probe card shown in the first prior art, since the shape of the bump is hemispherical, the front end of the bump is not sharp, so that a large pressure is required when coming into contact with the electrode pad of the wafer.
於第2先前形態所示之探針卡之構成中，與第1先前形態之探針卡不同，凸塊之形狀為四角柱狀或圓柱狀。因此，使凸塊之剖面面積形成得較小而可獲得前端較細之凸塊，但由於無法僅使凸塊之前端變細，因此就確保凸塊全體之強度之觀點而言，實際上無法使凸塊之前端變得尖 銳。因此，即便為第2先前形態之探針卡，於與晶圓之電極墊之接觸中亦需要較大壓力。 In the configuration of the probe card shown in the second prior art, unlike the probe card of the first prior art, the shape of the bump is a quadrangular prism or a column. Therefore, the cross-sectional area of the bump is made small to obtain a bump having a fine front end. However, since the front end of the bump cannot be made thinner, it is practically impossible to ensure the strength of the entire bump. Make the front end of the bump sharp sharp. Therefore, even in the probe card of the second prior art, a large pressure is required in contact with the electrode pads of the wafer.
本發明係為了解決此先前問題而成者，其目的在於提供可以較小之壓力將多數個凸塊一同良好地接觸於晶圓之電極墊之探針卡、使用該探針卡之附凸塊之膜片及該附凸塊之膜片之製造方法。 The present invention has been made to solve the above problems, and an object thereof is to provide a probe card which can contact a plurality of bumps with a small pressure on an electrode pad of a wafer with a small pressure, and a bump using the probe card A film and a method of manufacturing the film with the bump.
用於達成該目的之本發明之探針卡用之附凸塊之膜片具備：絕緣膜；凸塊，其以與形成於晶圓上之半導體晶片之電極墊電性接觸之方式設置於上述絕緣膜之表面上；及導電電極，其自該凸塊通過上述絕緣膜內延伸至上述絕緣膜之內面側；且上述導電電極之位於上述絕緣膜內的部分之剖面形狀係寬度朝向上述絕緣膜之表面變窄的梯形，上述凸塊形成為剖面三角形且具有較上述導電電極之上表面(表面)寬的底面。導電電極之上表面例如與凸塊之底面一體化。凸塊例如形成為圓錐狀或棱錐狀(例如4棱錐狀)等剖面三角形，因此前端尖銳，從而能以較小之壓力與晶圓之電極墊良好地電性接觸。而且，由於剖面面積朝向底面側逐漸增加，因此整體上可確保充分的強度。又，由於導電電極具有寬度朝向絕緣膜之表面變窄的梯形剖面形狀，因此導電電極朝向絕緣膜之表面側而止動。而且，由於凸塊具有較導電電極之上表面寬的底面，因此藉由該凸塊之底面之外側與絕緣膜之接觸或卡合，使得導電電極朝向絕緣膜之內面側而止動。導電電極之上表面例如位於與絕緣膜之表面相同之高度。 A bump-attached film for a probe card of the present invention for achieving the object includes: an insulating film; and a bump disposed on the electrode pad of the semiconductor wafer formed on the wafer in the above manner And a conductive electrode extending from the bump through the insulating film to an inner surface side of the insulating film; and a portion of the conductive electrode located in the insulating film has a cross-sectional shape width facing the insulating layer The trapezoid is narrowed in the surface of the film, and the bump is formed in a triangular cross section and has a bottom surface wider than the upper surface (surface) of the conductive electrode. The upper surface of the conductive electrode is integrated, for example, with the bottom surface of the bump. The bump is formed, for example, in a conical shape such as a conical shape or a pyramidal shape (for example, a quadrangular pyramid shape), so that the tip end is sharp, so that it can be in good electrical contact with the electrode pad of the wafer with a small pressure. Moreover, since the cross-sectional area gradually increases toward the bottom surface side, sufficient strength can be ensured as a whole. Further, since the conductive electrode has a trapezoidal cross-sectional shape in which the width is narrowed toward the surface of the insulating film, the conductive electrode is stopped toward the surface side of the insulating film. Further, since the bump has a bottom surface wider than the upper surface of the conductive electrode, the conductive electrode is stopped toward the inner surface side of the insulating film by the contact or engagement with the insulating film on the outer side of the bottom surface of the bump. The upper surface of the conductive electrode is, for example, at the same height as the surface of the insulating film.
探針卡用之附凸塊之膜片之導電電極具有自絕緣膜之內面突出之內面側端部，且該內面側端部能以較導電電極之位於絕緣膜內之部 分的底面(內面)寬之方式形成。內面側端部例如與導電電極之位於絕緣膜內之部分的底面一體化。根據如此構成，藉由內面側端部之外側與絕緣膜之內面之接觸或卡合，提高導電電極之向絕緣膜之表面側之止動效果。 The conductive electrode of the patch with the bump for the probe card has an inner surface side end protruding from the inner surface of the insulating film, and the inner surface side end portion can be located at the inner portion of the insulating film with the more conductive electrode The bottom surface (inner surface) of the minute is formed in a wide manner. The inner surface side end portion is integrated, for example, with the bottom surface of the portion of the conductive electrode located inside the insulating film. According to this configuration, the contact effect of the conductive electrode on the surface side of the insulating film is improved by contact or engagement with the outer surface of the inner surface side end portion and the inner surface of the insulating film.
此種附凸塊之膜片與具有與導電電極電性連接之端子的配線基板組合而構成探針卡。 Such a bump-attached diaphragm is combined with a wiring board having terminals electrically connected to the conductive electrodes to constitute a probe card.
附凸塊之膜片可具有與晶圓相對應之大小，例如為與晶圓相同或大致相同的大小。 The bump-attached diaphragm may have a size corresponding to the wafer, for example, the same or substantially the same size as the wafer.
探針卡可具備形成有複數個與半導體晶片相對應之貫通孔之框架板，且附凸塊之膜片具有與貫通孔相對應之大小，並可支持於框架板之表面側之貫通孔周邊。此處，設置有異方性導電膜，該異方性導電膜係形成為與貫通孔相對應之大小且具有支持於貫通孔或貫通孔周邊之彈性膜、及以於該彈性膜內相互絕緣之狀態形成之於厚度方向延伸的複數個導電路；且導電電極與配線基板之端子可經由該導電路而電性連接。 The probe card may have a frame plate formed with a plurality of through holes corresponding to the semiconductor wafer, and the film with the protrusions has a size corresponding to the through holes, and may be supported on the periphery of the through holes on the surface side of the frame plate. . Here, an anisotropic conductive film is formed which is formed to have a size corresponding to the through hole and has an elastic film supported on the periphery of the through hole or the through hole, and is insulated from each other in the elastic film The state is formed by a plurality of conductive circuits extending in the thickness direction; and the terminals of the conductive electrode and the wiring substrate are electrically connected via the conductive circuit.
又，本發明之探針卡用之附凸塊之膜片之製造方法係製造探針卡用之附凸塊之膜片的方法，該探針卡用之附凸塊之膜片具備：絕緣膜；凸塊，其以與形成於晶圓上之半導體晶片之電極墊電性接觸之方式設置於上述絕緣膜的表面；及導電電極，其自該凸塊通過上述絕緣膜內延伸至上述絕緣膜之內面側；且該探針卡用之附凸塊之膜片之製造方法具備如下步驟：準備步驟，其係準備用於形成上述絕緣膜之絕緣片材；鍍敷孔形成步驟，其係於已準備之上述絕緣片材上，以與上述半導體晶片之上述電極墊相對應之方式自內面側形成剖面三角形的鍍敷孔；電極體形成步驟，其係於已形成之上述鍍敷孔中進行鍍敷，而形成具有與該鍍敷孔相對應之形 狀、且下側(內面側)構成上述導電電極的電極體；露出步驟，其係以較上述電極體之構成上述導電電極之部分的更上側(表面側)自上述絕緣片材以剖面三角形突出而露出之方式，蝕刻上述絕緣片材之表面側；及凸塊形成步驟，其係對自將上述絕緣片材半蝕刻而形成之上述絕緣膜(存在絕緣膜之集合體之情形)突出之剖面三角形之上述電極體的表面進行鍍敷，而形成上述凸塊，該上述凸塊具有沿著該電極體之表面的表面。鍍敷孔前端尖銳，例如尖銳的凸塊具有沿著剖面三角形之電極體之表面的表面，因此，前端尖銳且係對自絕緣膜突出之電極體之表面進行鍍敷而形成，因此，底面較導電電極之上表面更寬。凸塊例如形成為剖面三角形。自絕緣膜突出之剖面三角形之電極體(電極體之上側)構成凸塊之內部。又，於電極體形成步驟中，能以較位於絕緣膜內之部分之底面寬的內面側端部自絕緣膜之內面突出之方式形成電極體。 Moreover, the method for manufacturing a bump-attached diaphragm for a probe card of the present invention is a method for manufacturing a bump-attached diaphragm for a probe card, and the bump-attached diaphragm of the probe card has: an insulation a film; a bump disposed on a surface of the insulating film in electrical contact with an electrode pad of the semiconductor wafer formed on the wafer; and a conductive electrode extending from the bump through the insulating film to the insulating layer The inner side of the film; and the method for manufacturing the bump-attached film for the probe card comprises the steps of: preparing a insulating sheet for forming the insulating film; and forming a plating hole, wherein And forming a plated hole having a triangular cross section from the inner surface side in a manner corresponding to the electrode pad of the semiconductor wafer; the electrode body forming step is performed on the formed plating layer Plating is performed in the hole to form a shape corresponding to the plating hole The electrode body of the conductive electrode is formed on the lower side (inner side); and the exposing step is to form a triangular cross section from the insulating sheet from a higher side (surface side) of a portion of the electrode body that constitutes the conductive electrode Etching and exposing the surface side of the insulating sheet; and a bump forming step of protruding the insulating film (the case where the insulating film is present) formed by half etching the insulating sheet The surface of the electrode body of the cross-sectional triangle is plated to form the bump, and the bump has a surface along the surface of the electrode body. The front end of the plating hole is sharp, for example, the sharp protrusion has a surface along the surface of the electrode body of the triangular cross section, and therefore, the front end is sharp and is formed by plating the surface of the electrode body protruding from the insulating film, so that the bottom surface is formed. The upper surface of the conductive electrode is wider. The bumps are formed, for example, as a cross-sectional triangle. The electrode body of the cross-sectional triangular shape (the upper side of the electrode body) protruding from the insulating film constitutes the inside of the bump. Further, in the electrode body forming step, the electrode body can be formed so as to protrude from the inner surface side end portion which is wider than the bottom surface of the portion located in the insulating film from the inner surface of the insulating film.
於本發明中，由於凸塊之形狀例如為剖面三角形之圓錐或棱錐，因此凸塊之前端尖銳，故而，與晶圓之電極墊之接觸時需要的壓力較低，與先前相比，例如可以1/2以下之壓力獲得穩定的接觸。藉此，例如容易實現異方性導電膜之長壽命化及多個銷之接觸所需之構造。 In the present invention, since the shape of the bump is, for example, a cone or a pyramid having a triangular cross section, the front end of the bump is sharp, so that the pressure required for contact with the electrode pad of the wafer is low, for example, compared with the prior art. A pressure below 1/2 gives a stable contact. Thereby, for example, it is easy to realize the structure required for the long life of the anisotropic conductive film and the contact of a plurality of pins.
進而，成為即便對凸塊施加不平衡之壓力，亦藉由凸塊之底面(底面之外周)、與導電電極之傾斜面而夾入絕緣膜的構造，然而，由於凸塊表面層與電極體之表面之上側的較廣範圍接合，因此凸塊於上下方向及橫方向均牢固地相對於絕緣膜而固定。因此，即便對凸塊進行拔出或彎折等亦不會產生損傷，因此具有可減少由強度之問題導致之良率下降的優點。 Further, even if the pressure is unbalanced to the bump, the insulating film is sandwiched by the bottom surface of the bump (the outer periphery of the bottom surface) and the inclined surface of the conductive electrode. However, the surface layer of the bump and the electrode body Since the upper surface of the surface is joined over a wide range, the bumps are firmly fixed to the insulating film in both the vertical direction and the lateral direction. Therefore, even if the bump is pulled out or bent, there is no damage, and therefore there is an advantage that the yield reduction due to the problem of strength can be reduced.
7‧‧‧接點膜(附凸塊之膜片) 7‧‧‧Contact film (film with bumps)
17、107‧‧‧凸塊 17, 107‧‧ ‧ bumps
19、109‧‧‧導電電極 19, 109‧‧‧ conductive electrodes
35‧‧‧聚醯亞胺片材(絕緣片材) 35‧‧‧Polyimide sheet (insulating sheet)
46‧‧‧電極體 46‧‧‧Electrode body
101‧‧‧膜凸塊(附凸塊之膜片) 101‧‧‧Film bumps (membranes with bumps)
105‧‧‧聚醯亞胺片材(絕緣膜) 105‧‧‧Polyimide sheet (insulation film)
圖1係表示本發明之第1實施形態中框架板的圖。 Fig. 1 is a view showing a frame plate in a first embodiment of the present invention.
圖2A係表示本發明之第1實施形態中探針卡之構造的剖面圖。 Fig. 2A is a cross-sectional view showing the structure of a probe card in the first embodiment of the present invention.
圖2B係表示本發明之第1實施形態中探針卡之構造的平面圖。 Fig. 2B is a plan view showing the structure of a probe card in the first embodiment of the present invention.
圖3係表示本發明之第1實施形態中貼合片材的圖。 Fig. 3 is a view showing a bonded sheet in the first embodiment of the present invention.
圖4係表示本發明之第1實施形態中貼合片材的剖面圖。 Fig. 4 is a cross-sectional view showing a bonded sheet in the first embodiment of the present invention.
圖5係表示本發明之第1實施形態中接點膜之製造方法之第2步驟的圖。 Fig. 5 is a view showing a second step of the method for producing a contact film in the first embodiment of the present invention.
圖6係表示本發明之第1實施形態中接點膜之製造方法之第3步驟的圖。 Fig. 6 is a view showing a third step of the method for producing a contact film in the first embodiment of the present invention.
圖7係表示本發明之第1實施形態中接點膜之製造方法之第4步驟的圖。 Fig. 7 is a view showing a fourth step of the method for producing a contact film in the first embodiment of the present invention.
圖8係表示本發明之第1實施形態中接點膜之製造方法之第5步驟的圖。 Fig. 8 is a view showing a fifth step of the method for producing a contact film in the first embodiment of the present invention.
圖9係表示本發明之第1實施形態中接點膜之製造方法之第6步驟的圖。 Fig. 9 is a view showing a sixth step of the method for producing a contact film in the first embodiment of the present invention.
圖10係表示本發明之第1實施形態中接點膜之製造方法之第7步驟的圖。 Fig. 10 is a view showing a seventh step of the method for producing a contact film in the first embodiment of the present invention.
圖11係表示本發明之第1實施形態中接點膜之製造方法之第8步驟的圖。 Fig. 11 is a view showing an eighth step of the method for producing a contact film in the first embodiment of the present invention.
圖12係表示本發明之第1實施形態中接點膜之製造方法之接著劑塗布 步驟的圖。 Fig. 12 is a view showing an adhesive coating method for producing a contact film in the first embodiment of the present invention; Diagram of the steps.
圖13係表示本發明之第1實施形態中鍍敷厚度5μm之凸塊形狀的圖。 Fig. 13 is a view showing a shape of a bump having a plating thickness of 5 μm in the first embodiment of the present invention.
圖14係表示本發明之第1實施形態中鍍敷厚度10μm之凸塊形狀的圖。 Fig. 14 is a view showing a shape of a bump having a plating thickness of 10 μm in the first embodiment of the present invention.
圖15係表示本發明之第2實施形態中之探針卡之構造的剖面圖。 Fig. 15 is a cross-sectional view showing the structure of a probe card in a second embodiment of the present invention.
圖16係表示第1先前形態中探針卡之構造的剖面圖。 Fig. 16 is a cross-sectional view showing the structure of a probe card in the first prior art.
圖17係表示第1先前形態中膜凸塊之製造方法之第1步驟的圖。 Fig. 17 is a view showing a first step of a method of manufacturing a film bump in the first prior art.
圖18係表示第1先前形態中膜凸塊之製造方法之第2步驟的圖。 Fig. 18 is a view showing a second step of the method for producing a film bump in the first prior art.
圖19係表示第1先前形態中膜凸塊之製造方法之第3步驟的圖。 Fig. 19 is a view showing a third step of the method for producing a film bump in the first prior art.
圖20係表示第2先前形態中框架板的圖。 Fig. 20 is a view showing a frame plate in the second prior art.
圖21係表示第2先前形態中探針卡之構造的剖面圖。 Fig. 21 is a cross-sectional view showing the structure of a probe card in the second prior art.
圖22係表示第2先前形態中貼合片材的圖。 Fig. 22 is a view showing a bonded sheet in the second prior art.
圖23係表示第2先前形態中貼合片材的剖面圖。 Fig. 23 is a cross-sectional view showing a bonded sheet in the second prior art.
圖24係表示第2先前形態中接點膜之製造方法之第1步驟的圖。 Fig. 24 is a view showing a first step of the method for producing a contact film in the second prior art.
圖25係表示第2先前形態中接點膜之製造方法之第2步驟的圖。 Fig. 25 is a view showing a second step of the method for producing a contact film in the second prior art.
圖26係表示第2先前形態中接點膜之製造方法之第3步驟的圖。 Fig. 26 is a view showing a third step of the method for producing a contact film in the second prior art.
圖27係表示第2先前形態中接點膜之製造方法之第4步驟的圖。 Fig. 27 is a view showing a fourth step of the method for producing a contact film in the second prior art.
圖28係表示第2先前形態中接點膜之製造方法之第5步驟的圖。 Fig. 28 is a view showing a fifth step of the method for producing a contact film in the second prior art.
圖29係表示第2先前形態中接點膜之製造方法之接著材塗布步驟的圖。 Fig. 29 is a view showing a step of applying a binder to a method for producing a contact film in the second prior art.
以下，參照圖1~圖14對本發明之第1實施形態(第1探 針卡)進行說明。第1探針卡具備：框架板，其具有接點膜及異方性導電膜；及配線基板。 Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 14 (first probe) Needle card) for explanation. The first probe card includes a frame plate having a contact film and an anisotropic conductive film, and a wiring substrate.
於圖1中，1為用於第1探針卡中之框架板，具有與檢查對象之晶圓(半導體晶圓)之尺寸大致同等的200mm~300mm之直徑，且厚度例如為40μm~80μm。又，為了可排除伴隨著溫度變化之位置偏移之影響，框架板1具有接近晶圓之熱膨脹係數或線熱膨脹係數，框架板1之熱膨脹係數或線熱膨脹係數例如為0~1×10-5/℃。因此，框架板1之材質可適用因瓦、42合金等金屬材料。進而，於框架板1上形成有與形成在晶圓上的半導體晶片相對應地於厚度方向貫通的複數或多個貫通穴3，且其等係藉由蝕刻形成。此處，貫通穴3以與1個半導體晶片相對應之方式形成，但亦可以與數個或2~5個半導體晶片相對應之方式形成。 In FIG. 1, reference numeral 1 denotes a frame plate used in the first probe card, and has a diameter of approximately 200 mm to 300 mm which is substantially equal to the size of a wafer (semiconductor wafer) to be inspected, and has a thickness of, for example, 40 μm to 80 μm. Moreover, in order to eliminate the influence of the positional shift accompanying the temperature change, the frame plate 1 has a thermal expansion coefficient or a linear thermal expansion coefficient close to the wafer, and the thermal expansion coefficient or the linear thermal expansion coefficient of the frame plate 1 is, for example, 0 to 1×10 -5 . /°C. Therefore, the material of the frame plate 1 can be applied to a metal material such as Invar or 42 alloy. Further, a plurality of or a plurality of through holes 3 penetrating in the thickness direction corresponding to the semiconductor wafer formed on the wafer are formed on the frame plate 1, and the like is formed by etching. Here, the through hole 3 is formed to correspond to one semiconductor wafer, but may be formed in correspondence with a plurality of or two to five semiconductor wafers.
其次，參照圖2對使用該框架板1之第1探針卡之構造進行說明。 Next, the structure of the first probe card using the frame plate 1 will be described with reference to Fig. 2 .
圖2表示形成於框架板1上之貫通穴3周邊之構造，且以支持於貫通穴3周邊之狀態配置有異方性導電膜5與接點膜(附凸塊之膜片)7。因此，異方性導電膜5與接點膜7具有與貫通穴(貫通孔)3或半導體晶片相對應之大小。於框架板1之各自之貫通穴3中構成又圖2之構造。異方性導電膜5係藉由彈性膜9、與設置於該彈性膜9上之導電路11構成，且彈性膜9係藉由厚度80μm的橡膠材料形成，外周固定於框架板1之貫通穴3周邊，並具有保持導電路11之作用。於彈性膜9之外周下端(外周內側)，一體形成有朝外的支持凸緣13，彈性膜9以支持凸緣13載置於貫通穴3之外周內面而受到支持之方式例如牢固地嵌入貫通穴3中。 2 shows a structure formed on the periphery of the through hole 3 formed in the frame plate 1, and the anisotropic conductive film 5 and the contact film (the film with the bumps) 7 are disposed in a state of being supported around the through hole 3. Therefore, the anisotropic conductive film 5 and the contact film 7 have a size corresponding to the through hole (through hole) 3 or the semiconductor wafer. The structure of FIG. 2 is formed in the respective through holes 3 of the frame plate 1. The anisotropic conductive film 5 is composed of an elastic film 9 and a conductive circuit 11 provided on the elastic film 9, and the elastic film 9 is formed of a rubber material having a thickness of 80 μm, and the outer periphery is fixed to the through hole of the frame plate 1. 3 peripheral, and has the function of holding the guiding circuit 11. The outer peripheral end (outer circumference inner side) of the elastic film 9 is integrally formed with an outwardly facing support flange 13, and the elastic film 9 is firmly embedded in such a manner that the support flange 13 is placed on the outer peripheral surface of the through hole 3 and supported. Through the hole 3.
導電路11係於厚度130μm之彈性膜中包含多個金屬粒子，具有如下功能：若自厚度方向施加壓力則變形從而藉由金屬粒子彼此接觸而於上下方向上通電。即，導電路11以於彈性膜9上形成有突出部分(此處為上下(表面側及內面側)之角(長方形)柱狀之突出部分，突出部分亦可為圓柱狀)之方式，藉由部分地形成130μm之厚度部分而構成。 The conductive circuit 11 includes a plurality of metal particles in an elastic film having a thickness of 130 μm, and has a function of being deformed by applying pressure from the thickness direction to be energized in the vertical direction by contact of the metal particles. In other words, the conductive circuit 11 has a protruding portion (here, a columnar protruding portion of the upper and lower sides (surface side and the inner surface side) at an angle (a rectangular portion), and the protruding portion may be a cylindrical shape). It is constituted by partially forming a thickness portion of 130 μm.
另一方面，接點膜7係藉由絕緣膜15、設置於絕緣膜15之表面的凸塊17、及設置於絕緣膜15之膜內及絕緣膜15之內面的導電電極19構成。絕緣膜15係以厚度20μm的聚醯亞胺形成，且藉由接著劑21將其周邊部或周邊部內面固定於框架板1(異方性導電膜5之外周之框架板1表面)上。於絕緣膜15之表面，藉由鎳而形成有底面之半徑及高度均約20μm的圓錐形凸塊17，且該凸塊17具有與晶圓之半導體晶片之電極墊接觸的作用。進而，於絕緣膜15中，與凸塊17連接之導電電極19形成於絕緣膜15之膜內及內面，且該導電電極19之下端部(內面側端部)22係以與異方性導電膜5之導電路11相同或較廣之面積形成，就導電電極19而言，內側端面於絕緣膜15之內面側露出，從而具有連接凸塊17與異方性導電膜5之導電路11的作用。導電電極19之絕緣膜15內之部分24形成為圓錐體形狀(剖面梯形狀)，且內面側端部22形成為較薄之長方形狀。而且，內面側端部22形成為較導電電極19之絕緣膜15內之部分24之底面更寬。23為具有與晶圓及框架板1相對應之大小之直徑的配線基板，且係藉由作為基材之厚度3~5mm的絕緣性基板25、端子27、配置於基材之一端的外部端子29及引出線31構成，且引出線31具有如下作用：將自凸塊17經由導電電極19、導電路11而傳遞至端子27之訊號，自外部端子29引出至外部。 此處，凸塊17、導電電極19、導電路11、及端子27均以於作為試驗對象之晶圓上的引出端子即半導體晶片之電極墊上水平方向之位置一致的狀態而形成，且可根據需要準備自數千至數萬個。 On the other hand, the contact film 7 is composed of an insulating film 15, a bump 17 provided on the surface of the insulating film 15, and a conductive electrode 19 provided in the film of the insulating film 15 and the inner surface of the insulating film 15. The insulating film 15 is formed of polyimine having a thickness of 20 μm, and the peripheral portion or the inner surface of the peripheral portion thereof is fixed to the frame plate 1 (the surface of the frame plate 1 on the outer periphery of the anisotropic conductive film 5) by the adhesive 21 . On the surface of the insulating film 15, a conical bump 17 having a radius of the bottom surface and a height of about 20 μm is formed by nickel, and the bump 17 has a function of contacting the electrode pad of the semiconductor wafer of the wafer. Further, in the insulating film 15, the conductive electrode 19 connected to the bump 17 is formed in the film and the inner surface of the insulating film 15, and the lower end portion (inner surface side end portion) 22 of the conductive electrode 19 is anisotropically The conductive circuit 5 has the same or a wider area, and the inner end surface of the conductive film 19 is exposed on the inner surface side of the insulating film 15 to have a conductive connection between the bump 17 and the anisotropic conductive film 5. The role of the road 11. The portion 24 in the insulating film 15 of the conductive electrode 19 is formed in a conical shape (a trapezoidal shape), and the inner surface side end portion 22 is formed in a thin rectangular shape. Further, the inner surface side end portion 22 is formed to be wider than the bottom surface of the portion 24 in the insulating film 15 of the conductive electrode 19. 23 is a wiring board having a diameter corresponding to the wafer and the frame plate 1, and is an insulating substrate 25 having a thickness of 3 to 5 mm as a base material, a terminal 27, and an external terminal disposed at one end of the substrate. 29 and the lead wire 31 are formed, and the lead wire 31 has a function of transmitting the signal from the bump 17 to the terminal 27 via the conductive electrode 19 and the conductive circuit 11, and is taken out from the external terminal 29 to the outside. Here, the bumps 17, the conductive electrodes 19, the conductive circuits 11, and the terminals 27 are formed in a state in which the positions on the electrode pads of the semiconductor wafer, which are the lead terminals on the wafer to be tested, are aligned in the horizontal direction, and can be Need to prepare from thousands to tens of thousands.
其次，使用圖3~圖12對接點膜7之製造方法進行說明。接點膜7由於尺寸較小，因此不必具有與晶圓相同之熱膨脹係數(線熱膨脹係數)(具體而言，具有較晶圓大的熱膨脹係數)，而可使用易於加工之材料而廉價地形成。 Next, a method of manufacturing the contact film 7 will be described with reference to Figs. 3 to 12 . Since the contact film 7 has a small size, it is not necessary to have the same thermal expansion coefficient (linear thermal expansion coefficient) as the wafer (specifically, a coefficient of thermal expansion larger than that of the wafer), and it can be formed inexpensively using a material that is easy to process. .
於圖3中，33為貼合片材，其中形成有多個接點膜7。於此情形時，雖較搭載於框架板1上之接點膜7之必需個數更多地形成接點膜7，但係使間距提高(變窄)而形成，因此，貼合片材33全體之尺寸小於框架板1，為邊長為200mm左右之經縮小的正方形，且容易藉由普通裝置以高精度對於由鍍敷、阻劑形成之圖案進行處理。圖4表示貼合片材(形成1個接點膜7之部分)的剖面，且貼合片材33係使用對於作為絕緣膜15或形成絕緣膜15之厚38μm的聚醯亞胺片材(絕緣片材)35貼合厚4μm的銅箔37而成者(第1步驟、準備步驟)。 In Fig. 3, 33 is a bonded sheet in which a plurality of contact films 7 are formed. In this case, although the contact film 7 is formed more than the necessary number of the contact films 7 mounted on the frame sheet 1, the pitch is increased (narrowed), and thus the laminated sheet 33 is formed. The overall size is smaller than the frame plate 1, and is a reduced square having a side length of about 200 mm, and it is easy to handle the pattern formed by plating or resist with high precision by a conventional device. 4 shows a cross section of the bonded sheet (the portion where the one contact film 7 is formed), and the bonded sheet 33 is made of a polyimide film having a thickness of 38 μm as the insulating film 15 or the insulating film 15 is formed ( The insulating sheet) 35 is formed by laminating a copper foil 37 having a thickness of 4 μm (first step, preparation step).
作為接點膜7之製造之第2步驟，於銅箔37上黏貼阻劑39，並且為了於與形成在晶圓上之半導體晶片之電極墊相對應或與電極墊相同之位置上形成導電電極，而使用光掩膜於阻劑39上形成圖案(參照圖5)。進而，作為第3步驟，將貼合片材33浸於銅蝕刻液中，並將形成於阻劑39上之圖案作為掩膜而於銅箔37上形成圓孔40(參照圖6)。其次，作為第4步驟，剝離阻劑39，將貼合片材33浸於以肼為主成分之聚醯亞胺蝕刻液中，將銅箔37作為掩膜，與銅箔37之圓孔40相對應地於聚醯亞胺片材35上自內面側 形成導電電極孔(鍍敷孔)41(鍍敷孔形成步驟，參照圖7)。於此情形時，藉由聚醯亞胺所具有之各向異性，對片材面以角度(X，此處為50°)以研缽狀進行蝕刻，且由於長時間浸於聚醯亞胺蝕刻液中，使導電電極孔41之前端變得尖銳，例如尖銳地形成，從而全體為圓錐或棱錐(剖面三角形)。該角度會根據聚醯亞胺之結晶構造而具有不同的值，例如於角度(X)對於片材面為50。之情形時，若形成於阻劑39上之圖案之圓孔直徑為56μm，則導電電極孔41之底部(內面開口部)之直徑為56μm，而至導電電極孔41之前端的高度為33.3μm。其次，作為第5步驟，如圖8所示，自貼合片材33之內面實施銅濺鍍，於導電電極孔41中形成銅薄膜43。其次，作為第6步驟，於銅箔37上塗布阻劑45，使用光掩膜於阻劑45上形成導電電極之圖案，並且將薄膜43作為鍍敷電極進行鎳鍍敷，使鎳鍍敷於導電電極孔41中成長至聚醯亞胺片材35之厚度左右或阻劑45之一半，形成電極體46(下側為導電電極19)(電極體形成步驟，參照圖9)。此處，形成於阻劑45中的導電電極之形成部較導電電極孔41之底部大。其次，作為第7步驟，剝離阻劑45，自貼合片材33之表面側將聚醯亞胺片材35浸於蝕刻液中，進行半蝕刻，直至聚醯亞胺片材35之厚度為20μm為止，從而使電極體46之前端側露出(露出步驟，參照圖10，然而於圖10等中並未特別區別表示銅薄膜43)。如先前所示，若使至導電電極孔41之前端為止的高度形成為33.3μm，則露出之部分之高度為13.3μm。藉由將聚醯亞胺片材35半蝕刻而形成絕緣膜15或絕緣膜15之集合體。其次，作為第8步驟，如圖11所示，將銅箔37作為電極而對電極體46之前端側之露出部分實施鎳鍍敷，從而形成凸塊17(凸塊形成步驟)。形成之凸塊17具有與電 極體46之露出部分之表面相對應之表面，且為圓錐形狀或剖面三角形，具體而言，例如成為前端角部為R形狀的剖面三角形、前端角部為圓弧形狀或較小的圓弧形狀(曲率半徑較小的圓弧形狀)的剖面三角形、或前端角部為較小圓角的剖面三角形，但並不改變前端角部的尖銳度。 As a second step in the manufacture of the contact film 7, a resist 39 is adhered to the copper foil 37, and a conductive electrode is formed in order to correspond to the electrode pad of the semiconductor wafer formed on the wafer or at the same position as the electrode pad. A pattern is formed on the resist 39 using a photomask (refer to FIG. 5). Further, as a third step, the bonded sheet 33 is immersed in a copper etching solution, and a pattern formed on the resist 39 is used as a mask to form a circular hole 40 in the copper foil 37 (see FIG. 6). Next, as a fourth step, the resist 39 is peeled off, and the bonded sheet 33 is immersed in a polyimide etchant containing ruthenium as a main component, and the copper foil 37 is used as a mask, and the round hole 40 of the copper foil 37 is used. Correspondingly on the inner side of the polyimide sheet 35 A conductive electrode hole (plating hole) 41 is formed (plating hole forming step, see FIG. 7). In this case, by the anisotropy of the polyimide, the sheet surface is etched at an angle (X, here 50°) in a mortar shape, and immersed in the polyimide for a long time. In the etching solution, the front end of the conductive electrode hole 41 is sharpened, for example, sharply formed, and the whole is a cone or a pyramid (a triangular cross section). This angle will have different values depending on the crystal structure of the polyimide, for example, the angle (X) is 50 for the sheet surface. In the case where the diameter of the circular hole formed in the pattern on the resist 39 is 56 μm, the diameter of the bottom (inner opening) of the conductive electrode hole 41 is 56 μm, and the height to the front end of the conductive electrode hole 41 is 33.3 μm. . Next, as a fifth step, as shown in FIG. 8, copper plating is performed on the inner surface of the self-bonding sheet 33, and a copper thin film 43 is formed in the conductive electrode hole 41. Next, as a sixth step, a resist 45 is applied on the copper foil 37, a pattern of a conductive electrode is formed on the resist 45 using a photomask, and a film 43 is used as a plating electrode for nickel plating to plate nickel. The conductive electrode hole 41 is grown to about the thickness of the polyimide film 35 or one half of the resist 45, and the electrode body 46 is formed (the lower side is the conductive electrode 19) (electrode body forming step, see FIG. 9). Here, the formation portion of the conductive electrode formed in the resist 45 is larger than the bottom of the conductive electrode hole 41. Next, as a seventh step, the resist 45 is peeled off, and the polyimide film 35 is immersed in the etching liquid from the surface side of the bonded sheet 33, and half-etched until the thickness of the polyimide sheet 35 is The front end side of the electrode body 46 is exposed at 20 μm (the exposure step, see FIG. 10, however, the copper thin film 43 is not particularly distinguished from FIG. 10 and the like). As described above, when the height to the front end of the conductive electrode hole 41 is set to 33.3 μm, the height of the exposed portion is 13.3 μm. The assembly of the insulating film 15 or the insulating film 15 is formed by half etching the polyimide film 35. Next, as an eighth step, as shown in FIG. 11, the copper foil 37 is used as an electrode, and the exposed portion on the front end side of the electrode body 46 is subjected to nickel plating to form the bump 17 (bump forming step). The formed bump 17 has electricity The surface of the exposed portion of the pole body 46 corresponds to the surface, and has a conical shape or a triangular cross section. Specifically, for example, a cross-sectional triangle having a R shape at the front end corner, a circular arc shape at the front end corner portion, or a small circular arc A cross-section triangle of a shape (a circular arc shape having a small radius of curvature) or a cross-sectional triangle having a small rounded corner at the front end corner does not change the sharpness of the front end corner.
使用圖13、圖14對已形成之凸塊17及導電電極19之形狀進行詳細表示，圖13為凸塊17形成時鍍敷厚度為5μm的詳細情形(圖11及圖12之詳細情形)，藉由將聚醯亞胺片材35半蝕刻，使電極體46之前端側露出，其後對電極體46之前端側之露出部48所進行之鎳鍍敷係對於露出部48之表面垂直地成長，因此，於前端部位以外，形成沿著露出部48之表面之厚度均勻的鍍敷部50，而於前端部位以球狀形成將露出部48之前端作為中心之鍍敷部50，且凸塊17成為凸塊前端為剖面較小的圓弧形狀的剖面三角形。進而，圖14為形成凸塊17時之鍍敷厚度為10μm的詳細情形(圖11中鍍敷厚度為10μm之情形)，與圖13同樣，於前端部位，以球狀形成將露出部48之前端作為中心之鍍敷部50，凸塊17成為凸塊前端為大於圖13之圓弧形狀的剖面三角形。於如此構成中，成為藉由剖面梯形之導電電極19、與直徑較鍍敷部50粗的凸塊17將聚醯亞胺片材35(藉由半蝕刻而成為絕緣膜15或絕緣膜15之集合體)夾入之構造，且凸塊17及導電電極19牢固地固定於聚醯亞胺片材35或絕緣膜15上。該鍍敷之理想厚度為5μm~10μm，若鍍敷厚度薄於5μm則其固定強度變弱，若鍍敷厚度厚於10μm則凸塊前端之圓弧形狀變大因此導致凸塊前端之尖銳度減少。最後，藉由蝕刻除去銅箔37，裁剪並分割圖3中之長方形部分，形成接點膜7。如圖12所示，將接著劑21塗布於自其中挑選之良好的接點膜7上，使用實裝機 如圖2般搭載於形成有異方性導電膜5之框架板1的各貫通穴3中(圖2A中並未特別區分表示銅箔37)，進而，藉由將框架板1全體配置於配線基板23上方或表面側而完成探針卡。 The shape of the formed bump 17 and the conductive electrode 19 will be described in detail with reference to FIGS. 13 and 14. FIG. 13 is a detailed view of the plating thickness of 5 μm when the bump 17 is formed (details of FIGS. 11 and 12). By partially etching the polyimide film 35, the front end side of the electrode body 46 is exposed, and then the nickel plating performed on the exposed portion 48 on the front end side of the electrode body 46 is perpendicular to the surface of the exposed portion 48. Since it grows, the plated portion 50 having a uniform thickness along the surface of the exposed portion 48 is formed in addition to the tip end portion, and the plated portion 50 having the front end of the exposed portion 48 as a center is formed in a spherical shape at the tip end portion, and is convex. The block 17 is a cross-sectional triangle having an arc shape with a small cross section at the tip end of the bump. Further, Fig. 14 shows a detailed case where the plating thickness is 10 μm when the bumps 17 are formed (in the case where the plating thickness is 10 μm in Fig. 11), and as in Fig. 13, the exposed portions 48 are formed in a spherical shape at the front end portion. The front end serves as the center plated portion 50, and the bump 17 has a cross-sectional triangle shape in which the tip end of the bump is larger than the arc shape of FIG. In such a configuration, the polyimide film 35 is formed by the conductive electrode 19 having a trapezoidal cross section and the bump 17 having a diameter larger than that of the plating portion 50 (the insulating film 15 or the insulating film 15 is formed by half etching). The assembly is sandwiched, and the bumps 17 and the conductive electrodes 19 are firmly fixed to the polyimide sheet 35 or the insulating film 15. The ideal thickness of the plating is 5 μm to 10 μm. If the plating thickness is thinner than 5 μm, the fixing strength is weak. If the plating thickness is thicker than 10 μm, the arc shape of the front end of the bump becomes large, thereby causing the sharpness of the front end of the bump. cut back. Finally, the copper foil 37 is removed by etching, and the rectangular portion in Fig. 3 is cut and divided to form a contact film 7. As shown in FIG. 12, the adhesive 21 is applied to a good contact film 7 selected therefrom, using a mounting machine. As shown in FIG. 2, it is mounted in each of the through holes 3 of the frame plate 1 on which the anisotropic conductive film 5 is formed (the copper foil 37 is not particularly shown in FIG. 2A), and the entire frame plate 1 is placed on the wiring. The probe card is completed above or on the surface side of the substrate 23.
此處，與第1先前形態之凸塊、短路部及內面電極部之形成方法相比較，於易殘留殘渣之聚醯亞胺上加工出的孔徑較大，因此容易進行鍍敷，可良率較佳地形成凸部及導電電極。即，存在藉由雷射而於聚醯亞胺片材上開設之小口徑之孔易由於隨著加工所產生之殘渣而產生鍍敷之成長不良，並於凸塊中產生不良之問題。 Here, compared with the method of forming the bump, the short-circuit portion, and the inner surface electrode portion of the first prior art, the pore diameter of the polyimine which is easily left on the residue is large, so that plating is easy, and it is good. The rate preferably forms a convex portion and a conductive electrode. In other words, there is a problem that a small-diameter hole opened in a polyimide film by laser is liable to cause growth failure due to the residue generated by the processing, and defects occur in the bump.
若將本探針卡搭載於探測裝置上，進行對準，並且向晶圓推壓，則凸塊17觸碰於晶圓之電極墊，其壓力通過導電電極19而施加於異方性導電膜5之導電路11上，與晶圓之電極墊接觸而獲得之訊號通過凸塊17、導電電極19、導電路11、端子27及引出線31而引出至外部端子29。 When the probe card is mounted on the detecting device, aligned, and pressed against the wafer, the bump 17 touches the electrode pad of the wafer, and the pressure is applied to the anisotropic conductive film through the conductive electrode 19. The signal obtained by contacting the electrode pads of the wafer on the fifth conductive circuit 11 is led out to the external terminal 29 through the bump 17, the conductive electrode 19, the conductive circuit 11, the terminal 27, and the lead line 31.
其次，參照圖15對本發明之第2實施形態(第2探針卡)進行說明。 Next, a second embodiment (second probe card) of the present invention will be described with reference to Fig. 15 .
於圖15中，101為膜凸塊(附凸塊之膜片)，於黏貼在剛性環103上的聚醯亞胺片材(絕緣膜)105中形成有凸塊107、及導電電極109(包含導電電極109之聚醯亞胺片材105內之部分124及內面側端部122)，且該凸塊107具有與晶圓上之作為引出端子的電極墊接觸之作用。113為異方性導電膜，且係藉由在由橡膠材形成之彈性膜115上形成藉由在厚度方向上壓縮而於厚度方向上通電之導電路117而構成，且具有吸收晶圓之電極墊或凸塊107等之高度偏差，對凸塊107施加均勻之接觸壓的作用。119為配線基板，且係由作為基材之厚度3~5mm之絕緣性基板121、端子123、 外部端子125及將其間連接之引出線127構成，具有將自凸塊107經由導電路117而傳遞至端子123之訊號引出至外部的作用。此處，凸塊107、導電電極109、導電路117及端子123形成於與作為試驗對象之晶圓上之引出端子即電極墊相對應之位置上(更具體而言，於電極墊上水平方向之位置相一致之狀態)，且可根據需要準備數千至數萬個。凸塊107及導電電極109具有與第1實施形態之凸塊17及導電電極19相同的構成及構造。 In FIG. 15, 101 is a film bump (a film with a bump), and a bump 107 and a conductive electrode 109 are formed in a polyimide film (insulating film) 105 adhered to the rigid ring 103 ( The portion 124 and the inner surface side end portion 122 of the polyimide film 105 of the conductive electrode 109 are provided, and the bump 107 has a function of contacting the electrode pad as a lead terminal on the wafer. 113 is an anisotropic conductive film, and is formed by forming a conductive circuit 117 which is energized in the thickness direction by being compressed in the thickness direction on the elastic film 115 formed of a rubber material, and has an electrode for absorbing the wafer. The height deviation of the pad or the bump 107 or the like exerts a uniform contact pressure on the bump 107. 119 is a wiring board, and is an insulating substrate 121 having a thickness of 3 to 5 mm as a base material, a terminal 123, The external terminal 125 and the lead wire 127 connected to the external terminal 125 have a function of guiding the signal transmitted from the bump 107 to the terminal 123 via the conductive circuit 117 to the outside. Here, the bump 107, the conductive electrode 109, the conductive circuit 117, and the terminal 123 are formed at positions corresponding to the electrode pads which are the lead terminals on the wafer to be tested (more specifically, in the horizontal direction on the electrode pads) The positions are in a consistent state), and thousands to tens of thousands can be prepared as needed. The bump 107 and the conductive electrode 109 have the same configuration and structure as the bump 17 and the conductive electrode 19 of the first embodiment.
膜凸塊101之製造方法係藉由與第1實施形態中接點膜7相同之方法製造。然而，由於膜凸塊101具有與晶圓相對應之大小，因此準備之貼合片材33亦為用於形成與晶圓相對應之尺寸的膜凸塊101者，且自貼合片材33之聚醯亞胺片材(絕緣片材)35全體形成一塊絕緣膜105。貼合片材33具有與第1實施形態中圖4相同之剖面，且使用對於厚度38μm之聚醯亞胺片材35貼合厚度4μm之銅箔37而成者。該貼合片材33全體中之一塊膜凸塊101之製造係經過與第1實施形態中第2步驟、第3步驟、第4步驟、第5步驟、第6步驟、第7步驟及第8步驟相同之步驟而進行。若第8步驟結束，則最後與第1實施形態之情形相同地藉由蝕刻除去銅箔37。將已完成之一塊附凸塊聚醯亞胺片材105貼附於剛性環103上從而形成膜凸塊101，於配線基板119上方或表面側配置異方性導電膜113，並藉由將上述膜凸塊101配置於異方性導電膜113上而完成探針卡。 The method of manufacturing the film bump 101 is produced by the same method as the contact film 7 of the first embodiment. However, since the film bump 101 has a size corresponding to the wafer, the prepared bonding sheet 33 is also a film bump 101 for forming a size corresponding to the wafer, and the self-bonding sheet 33 The polyimide film (insulating sheet) 35 is formed as a whole to form an insulating film 105. The bonded sheet 33 has the same cross section as that of FIG. 4 in the first embodiment, and a copper foil 37 having a thickness of 4 μm is bonded to the polyimide film 35 having a thickness of 38 μm. The manufacturing process of one of the laminated film members 33 of the entire laminated sheet 33 is the second step, the third step, the fourth step, the fifth step, the sixth step, the seventh step, and the eighth step in the first embodiment. The steps are the same as the steps. When the eighth step is completed, the copper foil 37 is finally removed by etching in the same manner as in the first embodiment. One of the block-attached bump polyimide sheets 105 is attached to the rigid ring 103 to form the film bump 101, and the anisotropic conductive film 113 is disposed above or on the surface side of the wiring substrate 119, and The film bump 101 is disposed on the anisotropic conductive film 113 to complete the probe card.
晶圓之半導體晶片之排列密度較高，第1實施形態中當用於形成接點膜7之分割較困難時，第2實施形態(第2探針卡)有效。 The arrangement density of the semiconductor wafer of the wafer is high. When the division for forming the contact film 7 is difficult in the first embodiment, the second embodiment (second probe card) is effective.
本發明之附凸塊之膜片或探針卡可有效地使用於晶圓之多 針批量接觸檢查中。 The bump-attached diaphragm or probe card of the present invention can be effectively used in many wafers Needle batch contact inspection.
1‧‧‧框架板 1‧‧‧Frame board
3‧‧‧貫通穴 3‧‧‧through points
5‧‧‧異方性導電膜 5‧‧‧ anisotropic conductive film
7‧‧‧接點膜 7‧‧‧Contact film
9‧‧‧彈性膜 9‧‧‧elastic film
11‧‧‧導電路 11‧‧‧Guide circuit
13‧‧‧支持凸緣 13‧‧‧Support flange
15‧‧‧絕緣膜 15‧‧‧Insulation film
17‧‧‧凸塊 17‧‧‧Bumps
19‧‧‧導電電極 19‧‧‧Conductive electrode
21‧‧‧接著劑 21‧‧‧Binder
22‧‧‧下端部(內面側端部) 22‧‧‧Bottom end (inside side end)
23‧‧‧配線基板 23‧‧‧Wiring substrate
24‧‧‧絕緣膜內之部分 24‧‧‧Parts in the insulating film
25‧‧‧絕緣性基板 25‧‧‧Insulating substrate
27‧‧‧端子 27‧‧‧ Terminal
29‧‧‧外部端子 29‧‧‧External terminals
31‧‧‧引出線 31‧‧‧ lead line
Claims (9)
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| TW102120288A TWI601959B (en) | 2013-06-06 | 2013-06-06 | Proximity patch for probe card, method for manufacturing patch for probe card and probe card |
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| Publication Number | Publication Date |
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| TW201447311A TW201447311A (en) | 2014-12-16 |
| TWI601959B true TWI601959B (en) | 2017-10-11 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772171A (en) * | 1993-09-03 | 1995-03-17 | Toshiba Corp | Electric inspection jig for wiring board |
| TW200538743A (en) * | 2004-05-19 | 2005-12-01 | Jsr Corp | Sheet-like probe, method of producing the probe, and application of the probe |
| TW200937022A (en) * | 2008-02-27 | 2009-09-01 | Renesas Tech Corp | Probe card, manufacturing method of probe card, semiconductor inspection apparatus and manufacturing method of semiconductor device |
| TW201109672A (en) * | 2009-05-29 | 2011-03-16 | Renesas Electronics Corp | Thin-film probe sheet and method of manufacturing the same, probe card, and semiconductor chip inspection apparatus |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0772171A (en) * | 1993-09-03 | 1995-03-17 | Toshiba Corp | Electric inspection jig for wiring board |
| TW200538743A (en) * | 2004-05-19 | 2005-12-01 | Jsr Corp | Sheet-like probe, method of producing the probe, and application of the probe |
| TW200937022A (en) * | 2008-02-27 | 2009-09-01 | Renesas Tech Corp | Probe card, manufacturing method of probe card, semiconductor inspection apparatus and manufacturing method of semiconductor device |
| TW201109672A (en) * | 2009-05-29 | 2011-03-16 | Renesas Electronics Corp | Thin-film probe sheet and method of manufacturing the same, probe card, and semiconductor chip inspection apparatus |
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