TWI600743B - 導體元件接著用樹脂糊組成物以及半導體裝置 - Google Patents
導體元件接著用樹脂糊組成物以及半導體裝置 Download PDFInfo
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- TWI600743B TWI600743B TW102110572A TW102110572A TWI600743B TW I600743 B TWI600743 B TW I600743B TW 102110572 A TW102110572 A TW 102110572A TW 102110572 A TW102110572 A TW 102110572A TW I600743 B TWI600743 B TW I600743B
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- paste composition
- resin paste
- meth
- silver powder
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Description
本發明是有關於一種樹脂糊(resin paste)組成物。
先前,作為半導體裝置所用的黏晶(die bonding)材料,已知Au-Si共晶、焊料、樹脂糊組成物等,但就作業性及成本的方面而言,廣泛使用樹脂糊組成物。
通常,半導體裝置是藉由黏晶材料將半導體晶片等元件接著於導線架等支撐構件而製造。黏晶材料要求將半導體元件與導線架(lead frame)等支撐構件接著的高的接著強度,另一方面,亦要求吸收因這些的熱膨脹率的差而產生的應力(stress)的性能。為了實現高的接著強度,同時降低因熱膨脹率的差引起的翹曲的產生,而提出如專利文獻1的環氧樹脂與丙烯酸系樹脂的混成(hybrid)的樹脂系的樹脂糊組成物。
然而,半導體晶片等半導體元件隨著高積體化及微細化,而要求導電性、導熱性等特性的高可靠性。因此,黏晶材料所用的樹脂糊組成物除了接著強度外,亦要求導電性或導熱性。為了對樹脂糊組成物賦予此種性能,作為導電性填料(filler),認
為可使用例如金粉、銀粉、銅粉等金屬粉,目前主要使用利用了銀粉的樹脂糊組成物。原因是,銀粉的稀有價值不如金粉,亦不會如銅粉般容易被氧化且保存穩定性差,而且作業性或機械特性優異,對樹脂糊組成物所要求的各特性亦優異。
但是,銀粉亦為貴金屬,是稀有價值高且高價的材料,因此作為樹脂糊組成物所用的導電性填料,一直在進行開發併用銀粉、與更易獲得且廉價的其他導電性填料者。
因此,作為更易獲得且廉價的其他導電性填料,就穩定性、導電性的觀點而言,一直在研究選擇鋁粉,且與銀粉併用(參照專利文獻2)。但是,專利文獻2所記載的含有金屬的糊(paste)中,鋁的金屬粉末與銀等的金屬粉末的體積比為5:95~40:60,不可謂充分減少銀等金屬粉末的使用量。另外,在大幅削減糊中的銀粉的量時,與現有的含有銀粉的樹脂糊組成物相比,不可謂具有同等以上的特性。如此現狀是,即便削減糊中的銀粉的量,亦無法獲得具有與含有大量現有的銀粉的現有的樹脂糊組成物同等以上的特性的樹脂糊組成物。
[專利文獻1]日本專利特開2002-12738號公報
[專利文獻2]日本專利第4569109號公報
本發明的目的是提供一種廉價的樹脂糊組成物、及使用上述樹脂糊組成物的半導體裝置,上述樹脂糊組成物可較佳地用於半導體晶片等導體元件與導線架等支撐構件的接著,會降低作為稀有價值高且高價的材料的銀的使用量,並且導電性、導熱性及接著性優異,且塗佈作業性、機械特性亦優異。
本發明者等人為了解決上述課題,反覆進行銳意研究,結果發現,藉由下述發明可解決上述課題。即,本發明提供一種下述樹脂糊組成物、及使用上述樹脂糊組成物的半導體裝置。
1.一種導體元件接著用樹脂糊組成物,其含有(A)(甲基)丙烯酸系化合物、(B)黏合劑樹脂、(C)胺化合物、(D)聚合起始劑、(E)可撓化劑、(F)銀粉及(G)鋁粉,且上述樹脂糊組成物中的(F)銀粉的含量為40質量%以下,上述(G)鋁粉/上述(F)銀粉的質量比為0.8~3.5,上述(F)銀粉含有敲緊密度(tap density)為2.5g/cm3以下的第1銀粉,且上述樹脂糊組成物中的上述第1銀粉的含量為5質量%以上。
2.如上述1所述的導體元件接著用樹脂糊組成物,其中進一步含有(H)偶合劑。
3.一種半導體裝置,其是半導體元件與支撐構件藉由如上述1或2所述的導體元件接著用樹脂糊組成物的硬化物而接合,且上述半導體元件與上述支撐構件的至少一部分藉由密封劑進行密封而成。
根據本發明,可獲得一種廉價的樹脂糊組成物、及使用上述樹脂糊組成物的半導體裝置,上述樹脂糊組成物可較佳地用於半導體晶片等導體元件與導線架等支撐構件的接著,會降低作為稀有價值高且高價的材料的銀的使用量,並且導電性、導熱性及接著性優異,且塗佈作業性、機械特性亦優異。
圖1是表示樹脂糊組成物所用的鋁粉粒子的外觀的電子顯微鏡照片。
圖2(a)~圖2(d)是用以說明用於測定體積電阻率的試樣的製作順序的示意圖。
[導體元件接著用樹脂糊組成物]
本發明的導體元件接著用樹脂糊組成物含有(A)(甲基)丙烯酸系化合物、(B)黏合劑樹脂、(C)胺化合物、(D)聚合起始劑、(E)可撓化劑、(F)銀粉及(G)鋁粉,且上述樹脂糊組成物中的(F)銀粉的含量為40質量%以下,上述(G)鋁粉/上述(F)銀粉的質量比為0.8~3.5,上述(F)銀粉含有敲緊密度為2.5g/cm3以下的第1銀粉,且上述樹脂糊組成物中的上述第1銀粉的含量為5質量%以上。以下,對各成分進行說明。
(A)(甲基)丙烯酸系化合物若為在上述化合物中具有(甲基)丙烯醯基的化合物,則並無特別限制,較佳為在上述化合物中具有1個以上(甲基)丙烯醯氧基的(甲基)丙烯酸酯化合物。作為此種(甲基)丙烯酸系化合物,較佳為可列舉以下通式(I)~通式(X)所示的化合物。
通式(I)中,R1表示氫或甲基,R2表示碳數1~100、
較佳為碳數1~36的2價脂肪族或具有環狀結構的脂肪族烴基。
作為通式(I)所示的(甲基)丙烯酸系化合物,較佳為可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸異硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異莰(isobornyl)酯、(甲基)丙烯酸三環[5.2.1.02,6]癸酯、(甲基)丙烯酸2-(三環)[5.2.1.02,6]癸-3-烯-8-或-9-基氧基乙酯(2-(tricyclo[5.2.1.02,6]dec-3-en-8 or 9-yloxy)ethyl methacrylate)等(甲基)丙烯酸酯化合物。
通式(II)中,R1及R2分別與上述者相同。
作為通式(II)所示的(甲基)丙烯酸系化合物,較佳為可列舉:(甲基)丙烯酸2-羥基乙酯(2-hydroxyethyl methacrylate)、(甲基)丙烯酸2-羥基丙酯(2-hydroxypropyl methacrylate)、二聚物二醇單(甲基)丙烯酸酯(dimer diol mono-methacrylate)等(甲基)丙烯酸酯化合物。
通式(III)中,R1與上述者相同,R3表示氫、甲基或苯氧基甲基,R4表示氫、碳數1~6的烷基、苯基或苯甲醯基,n表示1~50的整數。
作為通式(III)所示的(甲基)丙烯酸系化合物,較佳為可列舉:二乙二醇(甲基)丙烯酸酯(diethylene glycol methacrylate)、聚乙二醇(甲基)丙烯酸酯(polyethylene glycol methacrylate)、聚丙二醇(甲基)丙烯酸酯(polypropylene glycol methacrylate)、(甲基)丙烯酸2-甲氧基乙酯(2-methoxy ethyl methacrylate)、(甲基)丙烯酸2-乙氧基乙酯(2-ethoxyethyl methacrylate)、(甲基)丙烯酸2-丁氧基乙酯(2-butoxyethylmethacrylate)、甲氧基二乙二醇(甲基)丙烯酸酯(methoxy diethylene glycol methacrylate)、甲氧基聚乙二醇(甲基)丙烯酸酯(methoxy polyethylene glycol methacrylate)、(甲基)丙烯酸2-苯氧基乙酯(2-phenoxy ethyl methacrylate)、苯氧基二乙二醇(甲基)丙烯酸酯(phenoxy diethylene glycol methacrylate)、苯氧基聚乙二醇(甲基)丙烯酸酯(phenoxy polyethylene glycol methacrylate)、(甲基)丙烯酸2-苯甲醯氧基乙酯(2-benzoyloxy ethyl methacrylate)、(甲基)丙烯酸2-羥基-3-苯氧基丙酯(2-hydroxy-3-phenoxy propyl methacrylate)等(甲基)丙烯酸酯化合物。
通式(IV)中,R1與上述者相同,R5表示苯基、腈基、-Si(OR6)3(R6表示碳數1~6的烷基)或下述式所示的1價基團。
此處,R7、R8及R9分別獨立表示氫或碳數1~6的烷基,R10表示氫或碳數1~6的烷基或苯基,m表示0、1、2或3的數。
作為通式(IV)所示的(甲基)丙烯酸系化合物,較佳為可列舉:(甲基)丙烯酸苄酯、(甲基)丙烯酸2-氰基乙酯、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸四氫糠酯、(甲基)丙烯酸四氫吡喃酯、(甲基)丙烯酸二甲基胺基乙酯、(甲基)丙烯酸二乙基胺基乙酯、(甲基)丙烯酸1,2,2,6,6-五甲基哌啶酯、(甲基)丙烯酸2,2,6,6-四甲基哌啶酯、(甲基)丙烯醯氧基乙基磷酸酯、(甲基)丙烯醯氧基乙基苯基酸性磷酸酯、β-(甲基)丙烯醯氧基乙基氫鄰苯二甲酸酯、β-(甲基)丙烯醯氧基乙基氫
丁二酸酯(β-(methyl)acryloyloxy ethyl hydrogen succinate)等(甲基)丙烯酸酯化合物。
通式(V)中,R1及R2分別與上述者相同。
作為通式(V)所示的化合物,較佳為可列舉:乙二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二聚物二醇二(甲基)丙烯酸酯、二羥甲基三環癸烷二(甲基)丙烯酸酯等二(甲基)丙烯酸酯化合物。
通式(VI)中,R1、R3及n分別與上述者相同。但R3為氫或甲基時,n不為1。
作為通式(VI)所示的化合物,較佳為可列舉:二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯等二(甲基)丙烯酸酯化合物。
通式(VII)中,R1與上述者相同,R11及R12分別獨立表示氫或甲基。
作為通式(VII)所示的化合物,較佳為可列舉:雙酚A、雙酚F或雙酚AD 1莫耳與(甲基)丙烯酸縮水甘油酯2莫耳反應而得的二(甲基)丙烯酸酯化合物。
通式(VIII)中,R1、R11及R12分別與上述者相同,R13及R14分別獨立表示氫或甲基,p及q分別獨立表示1~20的整數。
作為通式(VIII)所示的化合物,較佳為可列舉:雙酚A、雙酚F或雙酚AD的聚環氧乙烷(polyethylene oxide)加成物的二(甲基)丙烯酸酯化合物。
通式(IX)中,R1表示上述者,R15、R16、R17及R18分別獨立表示氫或甲基,x表示1~20的整數。
作為通式(IX)所示的化合物,較佳為可列舉:雙((甲基)丙烯醯氧基丙基)聚二甲基矽氧烷、雙((甲基)丙烯醯氧基丙基)甲基矽氧烷-二甲基矽氧烷共聚物等二(甲基)丙烯酸酯化合物。
通式(X)中,R1表示上述者,r、s、t及u分別獨立為表示重複數的平均值的0以上的數,r+t為0.1以上,較佳為0.3~5,s+u為1以上,較佳為1~100。
作為通式(X)所示的化合物,有將順丁烯二酸酐加成而成的聚丁二烯、與(甲基)丙烯酸2-羥基乙酯反應而得的反應物及其氫化物,例如有MM-1000-80、MAC-1000-80(均為日本石油化學(股)、商品名)等。
本發明中,作為(A)(甲基)丙烯酸系化合物,可單獨使用上述化合物、較佳為上述(甲基)丙烯酸酯化合物,或者組合多種而使用。
本發明中,作為(A)(甲基)丙烯酸系化合物,若組合使用特定的(F)銀粉與(G)鋁粉,則導電性、接著性、導熱性優異,且塗佈作業性、機械特性亦優異,就可獲得能較佳地用作
黏晶用途的樹脂糊組成物的方面而言,較佳為如上述的(甲基)丙烯酸酯化合物。
作為(B)黏合劑樹脂,較佳為可列舉:環氧樹脂、矽酮樹脂、胺基甲酸酯樹脂、丙烯酸系樹脂等樹脂。這些樹脂中,就與上述(A)(甲基)丙烯酸系化合物的組合的觀點而言,較佳為環氧樹脂。
作為環氧樹脂,較佳為在1分子中具有2個以上環氧基的化合物。作為此種環氧樹脂,例如較佳為可列舉:雙酚A型環氧樹脂[AER-X8501(旭化成工業(股)、商品名)、R-301(油化殼牌環氧樹脂(Yuka Shell Epoxy)(股)、商品名)、YL-980(油化殼牌環氧樹脂(股)、商品名)]、雙酚F型環氧樹脂[YDF-170(東都化成(股)、商品名)]、雙酚AD型環氧樹脂[R-1710(三井化學(股)、商品名)]、苯酚酚醛清漆型環氧樹脂[N-730S(大日本油墨化學(Dainippon Ink and Chemicals,DIC)(股)、商品名)、Quatrex-2010(陶氏化學(Dow Chemical)公司、商品名)]、甲酚酚醛清漆型環氧樹脂[YDCN-702S(東都化成(股)、商品名)、EOCN-100(日本化藥(股)、商品名)]、多官能環氧樹脂[EPPN-501(日本化藥(股)、商品名)、TACTIX-742(陶氏化學公司、商品名)、VG-3010(三井化學(股)、商品名)、1032S(油化殼牌環氧樹脂(股)、商品名)]、具有萘骨架的環氧樹脂[HP-4032(DIC(股)、商品名)]、脂環式環氧樹脂[CEL-3000(大賽璐(Daicel)(股)、商品名)]、環氧化聚丁二烯[PB-3600(大賽璐(股)、商品名)、E-1000-6.5(日本石油化學(股)、商品名)]、胺型環氧樹脂[ELM-100(住友化學(股)、商品名)、YH-434L(東都化成(股)、商品名)]、
間苯二酚型環氧樹脂[DENACOL EX-201(長瀬化成工業(Nagase ChemteX)(股)、商品名)]、新戊二醇型環氧樹脂[DENACOL EX-211(長瀬化成工業(股)、商品名)]、己二醇型環氧樹脂[DENACOL EX-212(長瀬化成工業(股)、商品名)]、乙二醇-丙二醇型環氧樹脂[DENACOL EX-810、DENACOL EX-811、DENACOL EX-850、DENACOL EX-851、DENACOL EX-821、DENACOL EX-830、DENACOL EX-832、DENACOL EX-841、DENACOL EX-861(長瀬化成工業(股)、商品名)]、下述通式(XI)所示的環氧樹脂[E-XL-24、E-XL-3L(三井化學(股)、商品名)]
等。通式(XI)中,v表示0~5的整數。
這些環氧樹脂中,較佳為雙酚F型環氧樹脂、環氧化聚丁二烯、酚醛清漆型環氧樹脂。原因是,若使用這些樹脂作為黏合劑樹脂,則導電性、接著性、導熱性優異,且塗佈作業性、機械特性亦優異,而可獲得能較佳地用作黏晶用途的樹脂糊組成物。另外,這些環氧樹脂可單獨使用1種,亦可組合2種以上而使用。
(B)黏合劑樹脂、特別是環氧樹脂的分子量或數量平均分子量較佳為160~3000。數量平均分子量是藉由凝膠滲透層析法利用標準聚苯乙烯的標準曲線(standard curve)而測定(以下稱為凝膠滲透層析(Gel Permeation Chromatography,GPC)法)的
值。若(B)黏合劑樹脂的分子量或數量平均分子量為160以上,則具有優異的接著性,若(B)黏合劑樹脂的分子量或數量平均分子量為3000以下,則樹脂糊組成物的黏度不會過度上升,而可獲得良好的作業性。
環氧當量(epoxy equivalent)較佳為80~1000,更佳為100~500。若(B)黏合劑樹脂的環氧當量為80以上,則具有優異的接著性,若(B)黏合劑樹脂的環氧當量為1000以下,則在樹脂糊組成物的硬化時因未反應硬化物殘留引起的硬化後的熱歷程(heat history)中可抑制逸氣(outgas)的產生,因此較佳。
另外,樹脂糊組成物中的(B)黏合劑樹脂的含量較佳為0.1質量%~2.0質量%,更佳為0.5質量%~1.5質量%。若(B)黏合劑樹脂的含量為0.1質量%以上,則具有優異的接著性,若(B)黏合劑樹脂的含量為2.0質量%以下,則樹脂糊組成物的黏度不會過度上升,而可獲得良好的作業性。
另外,可包含在1分子中具有1個環氧基的化合物、單官能環氧化合物(反應性稀釋劑)作為環氧樹脂。作為此種單官能環氧化合物,可列舉:苯基縮水甘油醚(PGE、日本化藥(股)、商品名)、烷基苯酚單縮水甘油醚(PP-101、東都化成(股)、商品名)、脂肪族單縮水甘油醚(ED-502、艾迪科(ADEKA)(股)、商品名)、烷基苯酚單縮水甘油醚(ED-509、艾迪科(股)、商品名)、烷基苯酚單縮水甘油醚(YED-122、油化殼牌環氧樹脂(股)、商品名)、3-縮水甘油氧基丙基三甲氧基矽烷(KBM-403、信越化學工業(股)、商品名)、3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二甲氧基矽烷、1-(3-縮水甘油氧基丙
基)-1,1,3,3,3-五甲基二矽氧烷(TSL-8350、TSL-8355、TSL-9905(東芝有機矽(Toshiba Silicone)(股)、商品名))等。
單官能環氧化合物在不阻礙本發明的樹脂糊組成物的特性的範圍內使用,在(B)黏合劑樹脂總量中,較佳為使用10質量%以下,更佳為使用1質量%~5質量%。若單官能環氧化合物的使用量為10質量%以下,則樹脂糊組成物的黏度不會過度上升,而可獲得良好的作業性。
(C)胺化合物在上述(B)黏合劑樹脂為環氧樹脂時,是具有作為環氧樹脂的硬化劑的功能者,較佳為雙氰胺(dicyandiamide)、或者可較佳列舉以下通式(XII)所示的
二元酸二醯肼[ADH、PDH、SDH(均為日本精化(JAPAN FINECHEM)(股)、商品名)](通式(XII)中,R19表示間-伸苯基、對-伸苯基等2價芳香族基、碳數2~12的直鏈或支鏈的伸烷基)、包含環氧樹脂與胺化合物的反應物的微膠囊型硬化劑[NOVACURE(旭化成工業(股)、商品名)]、二胺基二苯基甲烷、間苯二胺、間二甲苯二胺、二胺基二苯基碸、脲、脲衍生物、三聚氰胺等聚胺化合物。
另外,作為(C)胺化合物,亦較佳為可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-苄基-2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等咪唑化合物。這些(C)胺化合物
可單獨使用1種,亦可組合2種以上而使用。
(C)胺化合物的調配量相對於樹脂糊組成物,較佳為0.05質量%~0.3質量%,更佳為0.07質量%~0.15質量%。若(C)胺化合物的調配量為0.05質量%以上,則硬化性不會劣化,若(C)胺化合物的調配量為0.3質量%以下,則樹脂糊組成物的穩定性變得良好。
(D)聚合起始劑是用於促進本發明的樹脂糊組成物的硬化者,較佳為自由基聚合起始劑。作為自由基聚合起始劑,就抑制孔隙(void)的生成的觀點而言,較佳為過氧化物系自由基聚合起始劑,另外,就樹脂糊組成物的硬化性及黏度穩定性的方面而言,較佳為急速加熱試驗中的分解溫度為70℃~170℃者。
作為自由基聚合起始劑,較佳為可列舉:1,1,3,3-四甲基過氧基-2-乙基己酸酯、1,1-雙(第三丁基過氧基)環己烷、1,1-雙(第三丁基過氧基)環十二烷、過氧化間苯二甲酸二-第三丁酯、過氧化苯甲酸第三丁酯、過氧化二異丙苯、過氧化第三丁基異丙苯、2,5-二甲基-2,5-二(第三丁基過氧基)己烷、2,5-二甲基-2,5-二(第三丁基過氧基)己炔、過氧化氫異丙苯等過氧化物系自由基聚合起始劑。
相對於樹脂糊組成物,(D)聚合起始劑的調配量較佳為0.1質量%~5質量%,更佳為0.6質量%~1.5質量%。若上述調配量為0.1質量%以上,則硬化性不會降低,若上述調配量為5質量%以下,則揮發成分不會變多,而難以在硬化物中產生被稱為孔隙的空隙。
(E)可撓化劑是用於對本發明的樹脂糊組成物的硬化物賦予可撓性者。作為可撓化劑,較佳為可列舉橡膠成分或熱塑性
樹脂。
作為橡膠成分,較佳為具有丁二烯(butadiene)的骨架的丁二烯系橡膠。作為丁二烯系橡膠,較佳為可列舉:環氧化聚丁二烯橡膠、順丁烯二醯化聚丁二烯、丙烯腈丁二烯橡膠(acrylonitrile butadiene rubber)、羧基末端丙烯腈丁二烯橡膠、胺基末端丙烯腈丁二烯橡膠、乙烯基末端丙烯腈丁二烯橡膠、苯乙烯丁二烯橡膠等液狀橡膠等。
作為橡膠成分,數量平均分子量較佳為500~10,000,更佳為1,000~5,000。若分子量為500以上,則可獲得良好的可撓化效果,若分子量為10,000以下,則樹脂糊組成物的黏度不會上升,而可獲得樹脂糊組成物的良好的作業性。數量平均分子量是藉由蒸氣壓滲透法所測定的值或藉由GPC法所測定的值。
(E)可撓化劑的調配量相對於樹脂糊組成物,較佳為1質量%~10質量%,更佳為2質量%~6質量%。若上述調配量為1質量份以上,則可獲得良好的可撓化效果,若上述調配量為10質量%以下,則黏度不會增大,而可獲得樹脂糊組成物的良好的作業性。
(F)銀粉是用於對本發明的樹脂糊組成物賦予導電性或導熱性的成分。本發明中,樹脂糊組成物中的(F)銀粉的含量為40質量%以下,上述(F)銀粉含有敲緊密度為2.5g/cm3以下的第1銀粉,且將樹脂糊組成物中的上述第1銀粉的含量為5質量%以上設為必要的條件。另外,將後述(G)鋁粉與上述(F)銀粉的質量比((G)鋁粉/(F)銀粉)為0.8~3.5設為必要的條件。
作為本發明中所用的(F)銀粉,平均粒徑較佳為1μm
~10μm,特別是更佳為2μm~8μm,尤佳為3μm~6μm。若(F)銀粉的平均粒徑為上述範圍內,則樹脂糊組成物中的銀粉難以沈降,在分配(dispense)樹脂糊組成物時,於針(needle)中不會產生堵塞,因此較佳。另外,(F)銀粉的平均粒徑是藉由雷射繞射法而測定的值。
(F)銀粉至少含有敲緊密度為2.5g/cm3以下的第1銀粉。若敲緊密度為2.5g/cm3以下,則可獲得優異的導電性,另外,樹脂糊組成物的黏度不會過度上升,而可獲得良好的塗佈作業性。根據同樣的理由,銀粉的敲緊密度較佳為0.5g/cm3~2.5g/cm3的範圍。此處,(F)銀粉的敲緊密度是依據JIS Z 2512,藉由敲緊密度測定器進行測定而得的值。具體而言,秤取銀粉100g,藉由漏斗使銀粉平穩地落進100ml量筒(graduated cylinder)中。將量筒載置於敲緊密度測定器上,以落下距離20mm、60次/分鐘的速度落下600次,測定經壓縮的銀粉的體積。(F)銀粉的敲緊密度是將樣品量除以經壓縮的銀粉的體積而算出的值。
本發明中,(F)銀粉可僅包含第1銀粉,若樹脂糊組成物中的第1銀粉的含量為5質量%以上,則亦可為與敲緊密度超過2.5g/cm3的銀粉混合而成者。另外,第1銀粉還可為包含敲緊密度為2.5g/cm3以下且不同的多種銀粉者。
樹脂糊組成物中的第1銀粉的含量需要為5質量%以上,較佳為7.5質量%以上。另外,較佳的上限值與(F)銀粉的含量相同,即較佳為(F)銀粉僅包含第1銀粉。
(F)銀粉的布厄特(Brunauer-Emmett-Teller,BET)比表面積較佳為0.5m2/g~2m2/g。此處,(F)銀粉的比表面積是藉
由BET法N2氣體吸附單點法所測定的值。若(F)銀粉的BET比表面積為上述範圍內,則樹脂糊組成物的黏度不會過度上升,而具有優異的導電性,因此較佳。
作為(F)銀粉的形狀,較佳為可列舉:粒狀、薄片狀(flake-shaped)、球狀、針狀、不規則狀等,其中較佳為薄片狀。(F)銀粉的形狀為薄片狀、不規則狀時的平均粒徑,是將其外接球的直徑設為平均粒徑。
(F)銀粉的含量相對於樹脂糊組成物,需要為40質量%以下,較佳為3質量%~40質量%,更佳為10質量%~35質量%。若(F)銀粉的含量為上述範圍內,則可獲得除了導電性、導熱性及接著性外,塗佈作業性、機械特性亦優異的廉價的樹脂糊組成物。
(G)鋁粉是用於對本發明的樹脂糊組成物賦予導電性或導熱性的成分,先前,單獨使用作為稀有價值高且高價的材料的銀粉,而藉由將其一部分替代成(G)鋁粉,儘管降低銀粉的使用量,但亦可獲得除了優異的導電性、導熱性及接著性外,塗佈作業性、機械特性亦優異的廉價的樹脂糊組成物。
作為本發明中所用的(G)鋁粉,平均粒徑較佳為1μm~6μm,特佳為2μm~5μm,尤佳為2μm~4μm。若(G)鋁粉的平均粒徑為上述範圍內,則樹脂糊組成物的潤濕擴展性不會降低,因此不會發生半導體晶片的傾斜。另外,(G)鋁粉的平均粒徑是藉由雷射繞射法所測定的值。
(G)鋁粉的視密度(apparent density)較佳為0.40g/cm3~1.20g/cm3,更佳為0.55g/cm3~1.00g/cm3。
另外,作為(G)鋁粉的形狀,較佳為可列舉:粒狀、薄片狀、球狀、針狀、不規則狀等,其中較佳為粒狀、薄片狀。(G)鋁粉的形狀為薄片狀、不規則狀時的平均粒徑,是將其外接球的直徑設為平均粒徑。
(G)鋁粉/(F)銀粉的質量比需要為0.8~3.5,較佳為1.0~3.0。若上述質量比小於0.8,則導熱性降低,若上述質量比超過3.5,則有接著性降低,作業性、塗佈作業性降低的情況。
本發明的樹脂糊組成物較佳為進一步含有(H)偶合劑。藉由使用(H)偶合劑,對導線架的接著性會提高。
(H)偶合劑並無特別限制,例如較佳為可列舉:矽烷偶合劑、鈦酸酯系偶合劑、鋁系偶合劑、鋯酸酯系偶合劑、鋁鋯酸酯系偶合劑等各種偶合劑。
作為(H)偶合劑的具體例,較佳為可列舉:甲基三甲氧基矽烷、甲基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、乙烯基三乙醯氧基矽烷、乙烯基-三(2-甲氧基乙氧基)矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、γ-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、甲基三(甲基丙烯醯氧基乙氧基)矽烷、γ-丙烯醯氧基丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基三甲氧基矽烷、N-β-(胺基乙基)-γ-胺基丙基甲基二甲氧基矽烷、N-β-(N-乙烯基苄基胺基乙基)-γ-胺基丙基三甲氧基矽烷、γ-苯胺基丙基三甲氧基矽烷、γ-脲丙基三甲氧基矽烷、γ-脲丙基三乙氧基矽烷、3-(4,5-二氫咪唑基)丙基三乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基
三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷、γ-縮水甘油氧基丙基甲基二異丙烯氧基矽烷、甲基三縮水甘油氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-巰基丙基三乙氧基矽烷、γ-巰基丙基甲基二甲氧基矽烷、三甲基矽烷基異氰酸酯、二甲基矽烷基異氰酸酯、苯基矽烷基三異氰酸酯、四異氰酸酯基矽烷、甲基矽烷基三異氰酸酯、乙烯基矽烷基三異氰酸酯、乙氧基矽烷三異氰酸酯等矽烷偶合劑;異丙基三異硬脂醯基鈦酸酯、異丙基三-十二烷基苯磺醯基鈦酸酯、異丙基三(二辛基焦磷酸酯基)鈦酸酯、四異丙基雙(二辛基亞磷酸酯基)鈦酸酯、四辛基雙(二-十三烷基亞磷酸酯基)鈦酸酯、四(2,2-二烯丙氧基甲基-1-丁基)雙(二-十三烷基)亞磷酸酯基鈦酸酯、雙(二辛基焦磷酸酯基)氧基乙酸酯基鈦酸酯、雙(二辛基焦磷酸酯基)伸乙基鈦酸酯、異丙基三辛醯基鈦酸酯、異丙基二甲基丙烯醯基異硬脂醯基鈦酸酯、異丙基(二辛基磷酸酯基)鈦酸酯、異丙基三枯基(cumyl)苯基鈦酸酯、異丙基三(N-胺基乙基-胺基乙基)鈦酸酯、二枯基苯氧基乙酸酯基鈦酸酯、二異硬脂醯基伸乙基鈦酸酯等鈦酸酯系偶合劑;乙醯烷氧基二異丙酸鋁等鋁系偶合劑;四丙基鋯酸酯、四丁基鋯酸酯、四(三乙醇胺)鋯酸酯、四異丙基鋯酸酯、乙醯丙酮鋯(zirconium acetylacetonate)、乙醯丙酮丁酸鋯(acetylacetone zirconium butyrate)、硬脂酸丁酸鋯(stearic acid zirconium butyrate)等鋯酸酯系偶合劑等。
上述中,γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等,是作為可用作環氧樹脂的單官能環氧化合物(反應性稀釋劑)而例示者,這些化合物由於具有兩者的功能,因此亦是作為矽烷偶合劑而例示者。
(H)偶合劑的調配量相對於樹脂糊組成物,較佳為0.5質量%~6.0質量%,特佳為1.0質量%~5質量%。若上述調配比例為0.5質量%以上,則可獲得提高接著強度的效果,若上述調配比例為6質量%以下,則揮發成分不會變多,在硬化物中難以產生被稱為孔隙的空隙。
本發明的樹脂糊組成物中,根據需要可進一步適當添加:氧化鈣、氧化鎂等吸濕劑,或氟系界面活性劑、非離子系界面活性劑、高級脂肪酸等潤濕改善劑,矽酮油等消泡劑,無機離子交換體等離子捕捉劑等各種添加劑,上述添加劑可單獨添加或組合多種而添加。
本發明的樹脂糊組成物例如可藉由以下方式獲得。準備構成本發明的樹脂糊的(A)~(G)的各成分、及根據所需而添加的各種添加劑,將這些一次性或分批投入至攪拌機、複合式混合機(hybrid mixer)、行星式混合機(planetary mixer)等可分散、攪拌、混練的裝置中,根據需要進行加熱,並進行混合、溶解、解粒混練或分散,而以均勻的糊狀獲得樹脂糊組成物。
所得的樹脂糊組成物由於是會降低作為稀有價值高且高價的材料的銀的使用量,並且導電性、導熱性及接著性優異,且塗佈作業性、機械特性亦優異的廉價的樹脂糊組成物,因此可用作導體元件接著用途。更具體而言,可較佳地用於半導體晶片等導體元件與導線架等支撐構件的接著。
[半導體裝置]
本發明的半導體裝置的特徵在於:其是半導體元件與支撐構件藉由上述本發明的導體元件接著用樹脂糊組成物的硬化物而接
合,且上述半導體元件與上述支撐構件的一部分藉由密封劑進行密封而成。
作為支撐構件,例如可列舉:銅導線架等導線架、環氧玻璃基板(包含玻璃纖維強化環氧樹脂的基板)、雙順丁烯二醯亞胺-三嗪樹脂(Bismaleimide-Triazine Resin,BT)基板(包含氰酸酯單體及其寡聚物與雙順丁烯二醯亞胺的BT樹脂使用基板)等有機基板。
本發明的半導體裝置是半導體元件與支撐構件藉由本發明的樹脂糊組成物的硬化物而接合。為了使半導體元件接著於導線架等支撐構件,例如可藉由以下方式進行:藉由分配法在上述支撐構件上塗佈樹脂糊組成物後,將半導體元件壓接,然後使用烘箱或加熱塊等加熱裝置進行加熱硬化。接著,經過打線接合(wire bonding)步驟等後,藉由通常的方法,即利用密封劑將上述半導體元件與上述支撐構件的至少一部分密封,藉此可獲得本發明的半導體裝置。
樹脂糊組成物的加熱硬化根據低溫下的長時間硬化的情形、或高溫下的快速硬化的情形而不同,通常於溫度150℃~220℃、較佳為180℃~200℃下,進行30秒~2小時、較佳為1小時~1小時30分鐘的加熱硬化。
[實施例]
以下,藉由實施例對本發明進行更具體地說明,但本發明不受這些實施例的任何限定。
(評價方法)
(1)黏度(黏度的穩定性)的測定及塗佈作業性的評價:
a)黏度的測定
使用EHD型旋轉黏度計(東京計器(股)製造、3°錐),測定各實施例及比較例的樹脂糊組成物在25℃時以0.5rpm進行3分鐘後的黏度(Pa.s)。
b)黏度的穩定性
將上述a)中所測定的黏度設為初始值,將取樣(sampling)時間設為1天、3天、7天,使用EHD型旋轉黏度計(東京計器(股)製造、3°錐(cone)),測定在25℃時以0.5rpm進行3分鐘後的黏度(Pa.s),並確認黏度的穩定性。
c)塗佈作業性的評價
藉由分配器(dispenser)(武蔵高科技(Musashi Engineering)(股)製造)進行連續打點時,以目視確認打點與打點之間的狀態,藉由以下基準進行評價。
○完全未確認到牽絲(cobwebbing)。
△確認到極少的牽絲,但實用上無問題。
×確認到牽絲。
(2)剪切接著強度的測定
將各實施例及比較例的樹脂糊組成物於附鍍Ni/Au的銅架、附鍍Ag環的銅導線架及附鍍Ag點的銅導線架上塗佈約0.5mg,於其上壓接2mm×2mm的Si晶片(厚度約0.4mm),接著藉由烘箱歷時30分鐘升溫至180℃,並於180℃下進行1小時硬化。使用自動接著力試驗裝置(BT4000、達歌(Dage)公司製造),測定其在260℃保持20秒時的剪切接著強度(MPa)。另外,剪切接著強度的測定是對10個試驗片進行,將其平均值作為剪切接著強度
(MPa)。
(3)體積電阻率的測定
如圖2(a)般在載玻片(東京硝子器機(股)製造、尺寸:76mm×26mm、厚度:0.9mm~1.2mm)上貼附紙帶(日東電工CS系統(NITTO DENKO CS SYSTEM)(股)製造、No.7210F、尺寸寬度:18mm、厚度:0.10mm),在約2mm的槽中放置樹脂糊組成物(圖2(b)),藉由載玻片平坦地延伸(圖2(c)),接著,藉由烘箱於180℃下進行1小時硬化而製成硬化物,並獲得體積電阻率的測定用試樣(圖2(d))。使用數位萬用錶(digital multimeter)(TR6846、愛德萬測試(ADVANTEST)公司製造)對上述硬化物測定體積電阻率(Ω.cm)。
(4)導熱率的測定
對藉由與上述(3)相同的方式而得的硬化物,藉由雷射閃光法,於下述條件下測定比熱、比重、及熱擴散率。
比熱測定裝置:使用差示掃描熱量計(帕金艾爾瑪(Parking-Elmer)公司製造的DSC),於溫度:25℃的條件下測定比熱。
比重測定裝置:使用密度計(阿發米拉(Alfa Mirage)製造的密度計),於室溫(阿基米德法)下測定比重。
熱擴散率:使用氙燈閃光分析儀(xenon flash analyzer)(LFA447、耐馳(NETZSCH)公司製造),於溫度:25℃的條件下測定熱擴散率。
(5)敲緊密度的測定
銀粉的敲緊密度是依據JIS Z 2512,藉由敲緊密度測定器進行
測定而得的值。具體而言,秤取銀粉100g,藉由漏斗使銀粉平穩地落進至100ml量筒中。將量筒載置於敲緊密度測定器上以落下距離20mm以60次/分鐘的速度落下600次,測定經壓縮的銀粉的體積。將樣品量除以經壓縮的銀粉的體積而算出敲緊密度。
(6)平均粒徑的測定
藉由小刮勺(microspatula)取銀粉至1~2杯燒杯中,加入約60ml異丙醇,以超音波均質器進行1分鐘分散。將其藉由雷射繞射式粒度分析計以測定時間30秒連續測定2次,而將50%累積徑的平均值作為平均粒徑。
實施例1~實施例10、比較例1~比較例6、參考例1
以表1、及表2所示的調配比例,混合各材料,使用行星式混合機進行混練後,於666.61Pa(5托(Torr))以下進行10分鐘脫泡處理,而獲得樹脂糊組成物。藉由上述所示的方法調查所得的樹脂糊組成物的特性(黏度及黏度穩定性、晶片剪切(die shear)接著強度、體積電阻率)。將其結果表示於表1。
表1及表2中的縮寫符號如下所述。
(1)(A)(甲基)丙烯酸系化合物((甲基)丙烯酸酯化合物)
SR-349(沙多瑪(Sartomer)公司製造的乙氧基化雙酚A二丙烯酸酯的製品名)
FA-512AS(日立化成(股)製造的丙烯酸二環戊烯氧基乙酯的製品名)
FA-512M(日立化成(股)製造的甲基丙烯酸二環戊烯氧基乙酯的製品名)
FA-513AS(日立化成(股)製造的丙烯酸二環戊酯的製品名)
FA-513M(日立化成(股)製造的甲基丙烯酸二環戊酯的製品名)
(2)(B)黏合劑樹脂
N-665-EXP(DIC(股)製造的甲酚酚醛清漆型環氧樹脂的製品名、環氧當量:198~208)
(3)(C)胺化合物
Dicy(日本環氧樹脂(Japan Epoxy Resins)(股)製造、雙氰胺的製品名)
(4)(D)聚合起始劑
Trigonox 22-70E(卡雅庫阿克蘇(Kayaku Akzo)(股)製造、1,1-雙(第三丁基過氧基)環己烷、10小時半衰期溫度:91℃)
(5)(E)可撓化劑
Epolead PB-4700(大賽璐(股)製造、環氧化聚丁二烯的商品名、環氧當量:152.4~177.8、數量平均分子量=3500)
(6)(F)銀粉
AgC-212DH(福田金屬箔粉工業(股)製造、形狀:薄片狀、平均粒徑:2.9μm、敲緊密度:4.75g/cm3、比表面積:1.00m2/g)
TC-106(徳力本店(股)製造、形狀:薄片狀、平均粒徑:7.0μm、敲緊密度:1.90g/cm3、比表面積:1.10m2/g)
TC-108(徳力本店(股)製、形狀:薄片狀、平均粒徑:7.0μm、敲緊密度:2.00g/cm3、比表面積:1.50m2/g)
AgC-A(福田金屬箔粉工業(股)製造、形狀:薄片狀、平均粒徑:5.0μm、敲緊密度:2.70g/cm3~3.90g/cm3、比表面積:0.55m2/g~0.90m2/g)
(7)(G)鋁粉
No.800F(米那魯克(Minalco)(股)製造的鋁粉的製品名、形狀:粒狀、平均粒徑:3.0μm~3.6μm、視密度:0.6g/cm3~1.0g/cm3)
No.900F(米那魯克(股)製造的鋁粉的製品名、形狀:粒狀、平均粒徑:2.0μm~2.6μm、視密度:0.6g/cm3~1.0g/cm3)
另外,對於所用的鋁粉,將表示各粒子的外觀的電子顯微鏡照片表示於圖1。
(8)(H)偶合劑
KBM-403(信越化學工業(股)製造、γ-縮水甘油氧基丙基三甲氧基矽烷)
(9)其他金屬粉
RD10-1220(東洋鋁(TOYO ALUMINIUM)(股)製造的鎳粉的製品名、形狀:薄片狀、平均粒徑:10μm~15μm)
20%Ag-Cu-MA(福田金屬箔粉工業(股)製造的塗銀的銅粉
的製品名、形狀:薄片狀、平均粒徑:7.4μm、敲緊密度:4.80g/cm3、比表面積:0.50m2/g)
SFR-Cu 5μm(日本霧化加工(Nippon Atomized Metal Powder)(股)製造的銅粉的製品名、形狀:薄片狀、平均粒徑:5.5μm)
如表1、及表2所示般確認到,本發明的樹脂糊組成物與現有的將銀粉用於填料的樹脂糊組成物(參考例1)相比,接著強度為同等、或同等以上,且導電性、導熱性、作業性優異。另外,不含敲緊密度為2.5g/cm3以下的銀粉的比較例1及比較例3的樹脂糊組成物,體積電阻率極大,銀粉/鋁粉的質量比為本申請案發明的規定範圍外的比較例2的樹脂糊組成物,塗佈作業性差,且體積電阻率亦差,另外包含鋁粉以外的金屬粉的比較例4~比較例6的樹脂糊組成物,體積電阻率極大(比較例4),或導致凝膠化而無法成為糊組成物(比較例5及比較例6)。
由此可確認到,根據本發明的樹脂糊組成物,可不使用大量的稀有價值高的銀,而使接著強度及體積電阻率等特性為與現有的將銀粉用於填料的樹脂糊組成物同等以上。
[產業上之可利用性]
根據本發明,可獲得廉價的樹脂糊組成物、及使用上述樹脂糊組成物的半導體裝置,上述樹脂糊組成物可較佳地用於半導體晶片等導體元件與導線架等支撐構件的接著,會降低作為稀有價值高且高價的材料的銀的使用量,並且導電性、導熱性及接著性優異,且塗佈作業性、機械特性亦優異。
Claims (9)
- 一種導體元件接著用樹脂糊組成物,其含有(A)(甲基)丙烯酸系化合物、(B)黏合劑樹脂、(C)胺化合物、(D)聚合起始劑、(E)可撓化劑、(F)銀粉及(G)鋁粉,且上述樹脂糊組成物中的(F)銀粉的含量為40質量%以下,上述(G)鋁粉/上述(F)銀粉的質量比為0.8~3.5,上述(F)銀粉含有敲緊密度為2.5g/cm3以下的第1銀粉,且上述樹脂糊組成物中的上述第1銀粉的含量為5質量%以上。
- 如申請專利範圍第1項所述的導體元件接著用樹脂糊組成物,其中上述(F)銀粉的形狀為薄片狀,且平均粒徑為1μm~10μm。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中上述(G)鋁粉的形狀為粒狀,且平均粒徑為1μm~6μm。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中上述(A)(甲基)丙烯酸系化合物為(甲基)丙烯酸酯化合物。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中上述(B)黏合劑樹脂為環氧樹脂。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中上述(C)胺化合物為選自聚胺化合物及咪唑化合物的至少一種。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中上述(E)可撓化劑為橡膠成分。
- 如申請專利範圍第1項或第2項所述的導體元件接著用樹脂糊組成物,其中進一步含有(H)偶合劑。
- 一種半導體裝置,其是半導體元件與支撐構件藉由如申請專利範圍第1項至第8項中任一項所述的導體元件接著用樹脂糊組成物的硬化物而接合,且上述半導體元件與上述支撐構件的至少一部分藉由密封劑進行密封而成。
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CN102365690A (zh) * | 2009-03-31 | 2012-02-29 | 太阳控股株式会社 | 感光性导电糊剂及电极图案 |
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JP4514390B2 (ja) * | 2002-03-19 | 2010-07-28 | 東洋紡績株式会社 | 導電性ペースト及びこれを用いた印刷回路 |
JP2003335924A (ja) * | 2002-05-22 | 2003-11-28 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置 |
JP3991218B2 (ja) * | 2002-12-20 | 2007-10-17 | 信越化学工業株式会社 | 導電性接着剤及びその製造方法 |
JP4400277B2 (ja) * | 2003-03-28 | 2010-01-20 | 日油株式会社 | 導電性ペースト |
JP4569109B2 (ja) * | 2004-01-08 | 2010-10-27 | 住友ベークライト株式会社 | 金属含有ペーストおよび半導体装置 |
JP2008171828A (ja) * | 2008-03-26 | 2008-07-24 | Toyobo Co Ltd | 導電性ペースト及びこれを用いた印刷回路 |
JP5126175B2 (ja) * | 2009-07-27 | 2013-01-23 | 住友ベークライト株式会社 | 金属含有ペーストおよび半導体装置 |
US8749076B2 (en) * | 2010-06-17 | 2014-06-10 | Hitachi Chemical Company, Ltd. | Resin paste composition |
CN103237863B (zh) * | 2010-12-20 | 2015-07-08 | 施敏打硬株式会社 | 导电性粘接剂 |
KR20140018901A (ko) * | 2011-03-14 | 2014-02-13 | 히타치가세이가부시끼가이샤 | 반도체 소자 접착용 수지 페이스트 조성물 및 반도체 장치 |
JP2012236873A (ja) * | 2011-05-10 | 2012-12-06 | Hitachi Chemical Co Ltd | 樹脂ペースト組成物及び半導体装置 |
-
2013
- 2013-01-28 JP JP2013013193A patent/JP5664673B2/ja active Active
- 2013-03-21 CN CN201380039424.2A patent/CN104487530B/zh active Active
- 2013-03-21 WO PCT/JP2013/058136 patent/WO2014115343A1/ja active Application Filing
- 2013-03-26 TW TW102110572A patent/TWI600743B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002179769A (ja) * | 2000-12-12 | 2002-06-26 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びこれを用いた半導体装置 |
CN102365690A (zh) * | 2009-03-31 | 2012-02-29 | 太阳控股株式会社 | 感光性导电糊剂及电极图案 |
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