TWI597787B - 積體電路封裝件及封裝方法 - Google Patents

積體電路封裝件及封裝方法 Download PDF

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Publication number
TWI597787B
TWI597787B TW104138454A TW104138454A TWI597787B TW I597787 B TWI597787 B TW I597787B TW 104138454 A TW104138454 A TW 104138454A TW 104138454 A TW104138454 A TW 104138454A TW I597787 B TWI597787 B TW I597787B
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Taiwan
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substrate
package
constraining layer
layer
cavity
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TW104138454A
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TW201701370A (zh
Inventor
劉育志
張建國
游濟陽
盧景睿
林志豪
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台灣積體電路製造股份有限公司
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    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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Description

積體電路封裝件及封裝方法
本發明總體涉及半導體領域，更具體地，涉及倒裝晶片的封裝。
半導體積體電路(IC)工業經歷了快速增長。IC材料和設計的技術進步產生了多代IC，其中，每一代都具有比前一代更小且更複雜的電路。在IC演進過程中，在幾何尺寸(即，使用製造工藝可形成的最小元件(或線))減小的同時，功能密度(即，單位晶片面積中的互連裝置的數量)已普遍增加。這種按比例縮小的工藝通常通過增加生產效率和降低相關成本來提供很多益處。這樣的按比例縮小增大了處理和製造IC的複雜程度。
為了實現IC處理和製造的這些進步，也需要在IC封裝中有類似的發展。例如，IC晶片包括形成在諸如半導體晶圓的基板上的半導體裝置，並且包括用於對積體電路提供電介面的金屬化的接觸件或附接件、焊盤。用於在晶片的內部電路與諸如電路板、其他晶片或晶圓的外部電路之間提供連接的傳統技術包括引線接合，其中引線用於將晶片接觸墊連接至外部電路。已知為倒裝晶片封裝的較新的晶片連接技術使用沉積在IC晶片的接觸墊上的焊料凸塊將IC晶片連接至外部電路。為了將晶片安裝至外部電路(如，基板)，以倒置方式將晶片翻轉並且晶片的接觸墊與基板上的匹配的接觸墊對準。然後底部填充物(在晶片與基板之間流動的粘合劑)在翻轉的晶片與 支撐外部電路的基板之間流動，以完成IC裝置與外部電路之間的機械和/或電互連。因為晶片直接放置在外部電路上，使得互連引線可以更短，所以形成的倒裝晶片封裝件比傳統的基於載體的系統小得多。結果，大大降低了電感和電阻發熱，使得更高速的裝置成為可能。
然而，由於倒裝晶片封裝件(諸如，例如IC晶片、基板和底部填充物)的各元件之間固有的熱膨脹係數不匹配，所以經常在倒裝晶片封裝件中誘生封裝件高度翹曲和高熱應力。這種高熱應力和翹曲不僅導致晶片中的低k互連層(各層)的分層，而且還引起焊料凸塊破裂，從而導致故障，使得倒裝晶片封裝件工作的長期可靠性劣化。
根據本發明的一個方面，提供了一種方法，包括：提供封裝基板；將裝置基板連接至封裝基板；在封裝基板和裝置基板上方形成包括開口的約束層，其中，在約束層與封裝基板之間定義有腔體；以及通過約束層的開口利用模塑料來填充腔體。
優選地，將裝置基板連接至封裝基板包括將固定在裝置基板的底面上的至少一個連接件接合至封裝基板。
優選地，裝置基板的底面包括連接至至少一個連接件的至少一個微電子和/或奈米電子元件。
優選地，該方法還包括：在裝置基板與約束層之間沉積介面層。
優選地，介面層被配置為將裝置基板與約束層接合。
優選地，模塑料包括樹脂材料和聚合物中的至少一種。
優選地，該方法還包括：在大約100℃至180℃的範圍內的溫度下，對填充腔體的模塑料進行固化。
優選地，該方法還包括：在利用模塑料填充腔體之後，將至少一個連接件連接至封裝基板的底面，其中，底面對於封裝基板來說與裝置基板相對。
根據本發明的另一方面，提供了一種方法，包括：將裝置基板連接至封裝基板；在裝置基板和封裝基板上方形成具有開口的金屬層，其中，在金屬層與封裝基板之間定義有腔體；以及通過開口在腔體中形成模塑料。
優選地，該方法還包括：對腔體中的模塑料進行固化。
優選地，該方法還包括：在裝置基板上直接形成介面層。
優選地，將裝置基板連接至封裝基板包括將裝置基板的頂面上的連接件接合至封裝基板的上表面。
優選地，模塑料包括樹脂材料和聚合物中的至少一種。
優選地，金屬層包括介於大約0.3mm至大約3mm範圍內的厚度。
根據本發明的又一方面，提供了一種積體電路(IC)封裝件，包括：第一基板；第二基板，設置在第一基板上方；多個連接件，設置在第一基板與第二基板之間，以電連接第一基板與第二基板；約束層，設置在第一基板和第二基板上方，使得在約束層與第一基板之間形成腔體；以及模塑料，設置在腔體內並且穿過約束層延伸，其中，約束層具有頂面和相對的底面，並且模塑料從約束層的頂面延伸至底面。
優選地，該封裝件還包括：介面層，設置在第二基板的頂面與約束層的底面之間。
優選地，介面層被配置為將約束層與第二基板接合。
優選地，模塑料將穿過約束層的開口流動。
優選地，模塑料包括由樹脂材料和聚合物中的至少一種製成的 材料。
優選地，第二基板的底面包括連接至多個連接件中的至少一個連接件的至少一個微電子和/或奈米電子元件。
100‧‧‧方法
102、104、106、108、110、112、114‧‧‧操作
200‧‧‧封裝基板
202‧‧‧裝置基板
202a、202b‧‧‧表面
204、206、208‧‧‧焊料凸塊和
210‧‧‧介面層
219‧‧‧開口
220‧‧‧約束層
221‧‧‧腔體
230‧‧‧模塑料
231‧‧‧固化
252、254、256‧‧‧焊料凸塊
280‧‧‧封裝基板
當結合附圖進行閱讀時，根據下面詳細的描述可以更好地理解本發明的各個方面。應該強調的是，根據工業中的標準實踐，各種部件沒有被按比例繪製。實際上，為了清楚的討論，各種部件的尺寸可以被任意增加或減少。
圖1示出了根據本發明的實施例的封裝半導體裝置的流程圖。
圖2A至圖2F示出了根據本發明的一些實施例的處於各個製造階段中的封裝的半導體裝置的截面圖。
以下公開內容提供了許多不同實施例或實例，用於實現所提供主題的不同特徵。以下將描述元件和佈置的特定實例以簡化本發明。當然，這些僅是實例並且不意欲限制本發明。例如，在以下描述中，在第二部件上方或上形成第一部件可以包括第一部件和第二部件直接接觸的實施例，也可以包括形成在第一部件和第二部件之間的附加部件使得第一部件和第二部件不直接接觸的實施例。另外，本發明可以在多個實例中重複參考標號和/或字元。這種重複是為了簡化和清楚的目的，並且其本身不指示所討論的各個實施例和/或配置之間的關係。
此外，為了便於描述，本文中可以使用諸如“在…下方”、“在…下面”、“下部”、“在…上面”、“上部”等空間關係術語以描述如圖所示的一個元件或部件與另一元件或部件的關係。除圖中所示的方位之外，空間關係術語意欲包括使用或操作過程中的裝置的不同的方位。裝置可以以其它方式定位(旋轉90度或在其他 方位)，並且在本文中使用的空間關係描述符可同樣地作相應地解釋。
現在參考圖1，示出了根據本發明的各個方面的封裝半導體裝置(晶片)的方法100的流程圖。方法100僅是實例，而不意欲限制本發明。可以在方法100之前、期間和之後提供附加的操作，並且對於該方法的附加的實施例，可以取代、省略上述的一些操作或者變換它們的順序。下面結合圖2A至圖2F描述方法100，這些圖以截面圖的形式示出了處於各個製造階段的半導體晶片的部分。晶片可以是在IC的處理和/或封裝期間製造的中間裝置或其一部分，該中間裝置可以包括：SRAM和/或其他邏輯電路；被動元件，諸如電阻器、電容器和電感器；以及有源組件，諸如p型FET(PFET)、n型FET(NFET)、FinFET、金屬氧化物半導體場效應電晶體(MOSFET)、互補金屬氧化物半導體(CMOS)電晶體、雙極型電晶體、高壓電晶體、高頻電晶體、其他記憶體單元和/或它們的組合。
方法100開始於操作102，提供封裝基板200，繼續操作104，如圖2A所示，將裝置基板202連接至封裝基板200。如下文將討論的，在一些實施例中，可以以多種方式實現封裝基板200，這些方式對於向裝置基板202提供基板(real estate)是可行的。例如，封裝基板200可以包括晶粒引線框架(die lead frame)、印刷電路板(PCB)、多晶片封裝基板或其他類型的基板。
還參考圖2A，裝置基板202可以包括一個或多個微電子/奈米電子裝置，諸如電晶體、電可程式設計唯讀記憶體(EPROM)單元、電可擦除可程式設計唯讀記憶體(EEPROM)單元、靜態隨機存取記憶體(SRAM)單元、動態隨機存取記憶體(DRAM)單元和其他的微電子裝置，可以互連這些裝置，以形成一個或多個積體電路。裝置基板202涉及一個或多個基板，一個或多個傳統的或今後開發的 微電子/奈米電子裝置可以形成在這些基板上面或內部。裝置基板202和/或封裝基板200的塊體(bulk)可以是絕緣體上矽(SOI)基板和/或可以包括矽、砷化鎵、應變矽、矽鍺、碳化物、金剛石和其他材料。
在圖2A示出的實施例中，裝置基板202可以包括一個或多個焊料凸塊。如圖所示，裝置基板202包括固定至裝置基板202的表面202a的焊料凸塊204、206和208。儘管在圖2A示出的實施例中，焊料凸塊204、206和208是基於球體的形狀，但是具有適用於連接的各種形狀的連接件都可以用作一個焊料凸塊並且仍落在本發明的範圍內。此外，裝置基板202的這種表面202a可以包括以上討論的微電子/奈米電子裝置。就是說，焊料凸塊204、206和208可以(電)連接至微電子/奈米電子裝置。由於裝置基板202上下倒轉(垂直旋轉180°)以使得焊料凸塊暴露于封裝基板，所以裝置基板202與焊料凸塊202、204和208的組合通常稱作倒裝晶片。就是說，因為裝置基板202倒轉，所以也將表面202a稱作裝置基板202的頂面。
封裝基板200還可以包括被配置為在封裝基板200與裝置基板202之間提供連接的至少一個接觸墊。更具體地，封裝基板200的每一個接觸墊都可以與裝置基板的每一個焊料凸塊對準，使得用期望的方式將裝置基板202連接至封裝基板200。
方法100繼續操作106，其中，在裝置基板202的表面202b上方沉積介面層210。因為裝置基板202倒轉，所以也將表面202b稱作裝置基板202的底面。在一些實施例中，介面層210被配置為向兩個連接的層提供介面並且進一步接合兩個連接的層。例如，介面層210接合裝置基板202與散熱器(如，參考圖2C的約束(constraint)層220)，該散熱器對於介面層210來說與裝置基板202相對。介面層210還可被配置為將來自裝置基板202的表面202b的熱量有效地轉移至散 熱器(如，關於圖2C的約束層220)。因此，能夠接合連接的各層並且將熱量從一層轉移至另一層的任何類型的材料都可以用於介面層210。例如，介面層210可以包括：導電膠(paste)、潤滑脂、相變材料(PCMs)、導熱墊片(thermal pad)和/或導熱膜。
方法100繼續操作108，其中，在封裝基板200上方沉積包括開口219的約束層220。約束層220用於包圍封裝基板200的頂面。在一些實施例中，約束層220可以包括高彈性模量和中等熱膨脹係數(如，在約18ppm/℃至約26ppm/℃的範圍內)，以當封裝的裝置使用時，在熱循環期間對封裝的裝置(如，封裝基板200、裝置基板202和約束層220)提供抑制。更具體地，在熱循環期間，約束層220可以用作散熱層，該散熱層對於散發經過介面層210傳導的熱量是可行的。這樣，約束層220通常被稱作吸熱器或散熱器。雖然在具體的實施例中，約束層220由塗覆有鎳的銅製成，但是可以使用各種合適的金屬/金屬間化合物(intermetallic material)，諸如，例如鋁化銅和鋁化鎳。儘管本發明的約束層220被限制為厚度在大約0.5mm至2mm的範圍之間，但是能夠提供期望的抑制和散熱的厚度的任意數值都可以採用並且仍然在本發明的範圍內。
還參考圖2C，在示出的實施例中，約束層220可以包括與腔體221連通的至少一個開口(如，219)。可以通過用於形成開口的各種合適的方法(諸如，例如鐳射鑽孔方法、機械鑽孔方法和/或機械蝕刻方法)來形成開口219。如下文更加具體的描述，約束層的這種開口被配置為使模塑料能夠流經開口219並且進入腔體221。儘管在一些具體的實施例中，在操作108期間形成開口219(即，在沉積約束層220之前開口易於形成)，但是可以在獨立且單個操作中形成開口219。例如，方法100可以包括可選的操作(未示出)，提供如上所討論的開口，並且該操作可以在操作108之前或之後執行。
方法100繼續操作110，利用模塑料230填充腔體221。如圖所示，通過封裝基板200、裝置基板202、焊料凸塊204至208、介面層210、約束層220來定義腔體221。在一些實施例中，模塑料包括使封裝的裝置變硬的高強度模量，以進一步保護裝置基板202免受彎曲破壞/應力。例如，這種模塑料可以是環氧樹脂聚合物、樹脂材料等。
參考圖2E，方法100繼續操作112，對模塑料230進行固化231。在一些實施例中，固化231可以包括將模塑料加熱至大約100℃至180℃的範圍內的溫度，以硬化模塑料230。
參考圖2F，方法100進行至操作114，其中通過固定至封裝基板200的底面的多個焊料凸塊252、254和256將封裝基板200連接至附加的封裝基板280。封裝基板200的該底面對於封裝基板200來說與連接的倒裝晶片(即，裝置基板202和焊料凸塊204至208)相對。附加的封裝基板280可以包括晶粒引線框架、印刷電路板(PCB)、多晶片封裝基板或其他類型的基板。
基於以上所討論的，可以看出，本發明提供了各種優勢。然而，應該理解，沒必要在本文中論述所有的優勢，並且其他實施例可以提供不同的優勢，因此並不需要所有的實施例都具有特定的優勢。
本發明的一個優勢在於，提供了封裝IC晶片的新方法。如以上所討論的，通過使用目前公開的方法和系統，約束層整體不僅對封裝的IC晶片提供抑制，而且用作散熱層。此外，利用約束層的開口，模塑料可用於排除可能存在于封裝的IC晶片內的空隙中的水分和/或空氣。進一步，通過沉積所公開的約束層(具有開口)以包圍封裝基板，模塑料可以填充封裝的IC晶片內的空隙，並且在其被固化之後，模塑料還可以對裝置基板和連接的焊料凸塊提供硬度和/或保護。
本發明提供了一種用於封裝裝置基板的方法。更具體地，該方法包括：提供封裝基板；將裝置基板連接至封裝基板；在封裝基板和裝置基板上方形成包括開口的約束層，其中在約束層與封裝基板之間定義有腔體；以及通過約束層的開口利用模塑料來填充腔體。
本發明提供了一種用於封裝裝置基板的方法。更具體地，該方法包括：將裝置基板連接至封裝基板；在裝置基板和封裝基板上方形成金屬層，其中在金屬層與封裝基板之間定義有腔體；在金屬層中形成開口，其中開口與腔體連通；以及通過開口在腔體中形成模塑料。
本發明提供了一種積體電路(IC)封裝件。IC封裝件包括：第一基板；設置在第一基板上方的第二基板；設置在第一與第二基板之間的多個焊料凸塊，以電連接第一與第二基板；設置在第一和第二基板上方的約束層，使得在約束層與第一基板之間形成腔體；以及設置在腔體內並且穿過約束層延伸的模塑料。約束層具有頂面和相對的底面，並且模塑料從約束層的頂面延伸至底面。
上面論述了若干實施例的部件，使得本領域普通技術人員可以更好地理解本發明的各個方面。本領域普通技術人員應該理解，可以很容易地使用本發明作為基礎來設計或更改其他用於達到與這裡所介紹實施例相同的目的和/或實現相同優點的處理和結構。本領域普通技術人員也應該意識到，這種等效構造並不背離本發明的精神和範圍，並且在不背離本發明的精神和範圍的情況下，可以進行多種變化、替換以及改變。
200‧‧‧封裝基板
202‧‧‧裝置基板
210‧‧‧介面層
220‧‧‧約束層
230‧‧‧模塑料
252、254、256‧‧‧焊料凸塊
280‧‧‧封裝基板

Claims (10)

  1. 一種積體電路封裝方法，包括：提供封裝基板；將裝置基板連接至上述封裝基板；在上述封裝基板和上述裝置基板上方形成包括開口的約束層，其中，在上述約束層與上述封裝基板之間定義有腔體；以及通過上述約束層的開口利用模塑料來填充上述腔體。
  2. 如請求項1所述的方法，其中，將上述裝置基板連接至上述封裝基板包括將固定在上述裝置基板的底面上的至少一個連接件接合至上述封裝基板。
  3. 如請求項2所述的方法，其中，上述裝置基板的底面包括連接至上述至少一個連接件的至少一個微電子和/或奈米電子元件。
  4. 如請求項1所述的方法，還包括：在上述裝置基板與上述約束層之間沉積介面層。
  5. 如請求項4所述的方法，其中，上述介面層被配置為將上述裝置基板與上述約束層接合。
  6. 如請求項1所述的方法，其中，上述模塑料包括樹脂材料和聚合物中的至少一種。
  7. 一種積體電路封裝方法，包括： 將裝置基板連接至封裝基板；在上述裝置基板和上述封裝基板上方形成具有開口的金屬層，其中，在上述金屬層與上述封裝基板之間定義有腔體；以及通過上述開口在上述腔體中形成模塑料。
  8. 如請求項7所述的方法，還包括：對上述腔體中的模塑料進行固化。
  9. 一種積體電路(IC)封裝件，包括：第一基板；第二基板，設置在上述第一基板上方；多個連接件，設置在上述第一基板與上述第二基板之間，以電連接上述第一基板與上述第二基板；約束層，設置在上述第一基板和上述第二基板上方，使得在上述約束層與上述第一基板之間形成腔體；以及模塑料，設置在上述腔體內並且穿過上述約束層延伸，其中，上述約束層具有頂面和相對的底面，並且上述模塑料從上述約束層的頂面延伸至上述底面。
  10. 如請求項9所述的封裝件，還包括：介面層，設置在上述第二基板的頂面與上述約束層的底面之間。
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