TWI596644B - Fluid distribution member assembly for plasma processing apparatus - Google Patents
Fluid distribution member assembly for plasma processing apparatus Download PDFInfo
- Publication number
- TWI596644B TWI596644B TW101109819A TW101109819A TWI596644B TW I596644 B TWI596644 B TW I596644B TW 101109819 A TW101109819 A TW 101109819A TW 101109819 A TW101109819 A TW 101109819A TW I596644 B TWI596644 B TW I596644B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluid dispensing
- groove
- fluid
- processing system
- assembly
- Prior art date
Links
Description
本發明大致上係針對供使用於電漿處理設備之流體分配元件組件，且更特別地是於電漿處理期間針對減輕在流體分配元件組件上之熱應力的效應。 The present invention is generally directed to fluid distribution component assemblies for use in plasma processing equipment, and more particularly to mitigate the effects of thermal stress on fluid distribution component assemblies during plasma processing.
目前，積體電路(IC)發展需要驅動電漿灰化製程，以利用增加侵蝕性的氣體化學過程和現象及熱環境。在均勻之速率越過待處理晶圓的表面發生該灰化製程係重要的。為此目的，製程條件被精確地控制，且小心地設計的零組件被使用於該處理室中，以確保均勻之灰化。一種此零組件係所謂之折流板、或流體分配板及/或組件，其被設計成將受激的電漿均勻地引導及分配至一晶圓表面上。一種示範的流體分配板設計被顯示及敘述在美國專利申請案公告第2005/0241767號中。 Currently, the development of integrated circuits (ICs) requires the drive of a plasma ashing process to take advantage of increased aggressive chemical processes and phenomena and thermal environments. It is important that the ashing process occurs at a uniform rate across the surface of the wafer to be processed. For this purpose, process conditions are precisely controlled and carefully designed components are used in the process chamber to ensure uniform ashing. One such component is a so-called baffle, or fluid distribution plate and/or assembly that is designed to uniformly direct and distribute the excited plasma onto a wafer surface. An exemplary fluid distribution plate design is shown and described in U.S. Patent Application Publication No. 2005/0241767.
在乾燥式灰化器系統內之電漿溫度大致上係於攝氏1000度的範圍中。分子之種類係在該系統之微波來源內激發，且往下游攜帶能量。能量係以熱之形式傳送至被電漿弄濕之零件。由於不均勻之熱傳送的影響，熱不均勻性越過這些零件發展及造成內部應力，該內部應力依序危及其結構之完整性。種類於與該處理系統內之尤其包括該流體分配元件的各種零組件碰撞時之表面再結合造成非常高之熱負載，需要包括該流體分配元件的電漿處理系統之設計 的新穎之熱流管理。 The plasma temperature in the dry asher system is generally in the range of 1000 degrees Celsius. The type of molecule is excited within the microwave source of the system and carries energy downstream. The energy is transferred in the form of heat to the parts that are wetted by the plasma. Due to the effects of uneven heat transfer, thermal non-uniformity develops over these parts and creates internal stresses that in turn compromise the integrity of the structure. Recombination of the surface upon collision with various components of the processing system, including the various components of the fluid distribution component, results in a very high thermal load requiring the design of a plasma processing system including the fluid distribution component The novel heat flow management.
由於其對高溫之阻抗以及其化學之純度，玻璃、陶瓷、及熔合的二氧化矽通常被採用於包括該流體分配元件之電漿處理系統的最重要區域中所使用之零件的設計。由於不同材料間之不均勻的熱負載或不均勻的膨脹，應力破裂通常在這些材料中發生。於很多案例中，不均勻之加熱及冷卻可產生超過該材料之降伏或最後之拉張應力限制的應力，導致毀滅性的破壞。雖然在電漿處理的一般範圍中不受高溫影響，這些材料對於相當大的溫度梯度及熱衝擊係敏感的。 Due to their resistance to high temperatures and their chemical purity, glass, ceramic, and fused ceria are typically employed in the design of the parts used in the most important areas of the plasma processing system including the fluid distribution element. Stress cracking typically occurs in these materials due to uneven thermal loading or uneven expansion between different materials. In many cases, uneven heating and cooling can create stresses that exceed the material's fall or final tensile stress limit, resulting in devastating damage. Although not affected by high temperatures in the general range of plasma processing, these materials are sensitive to relatively large temperature gradients and thermal shocks.
電漿系統中所使用之流體分配元件及/或組件可為由氧化鋁陶瓷(AL2O3)、熔合的二氧化矽(SiO2)、或其他玻璃、陶瓷、金屬、或任何合適之材料及/或其組合所構成。與電漿焰炬類似的下游微波電漿來源輸出輻射狀的氣體及在被衝擊的零件上造成極端之溫度梯度。在待以電漿接觸之第一板件的中心及邊緣間之進一步的溫度差異之範圍係在攝氏數百度內。此梯度能產生顯著之熱應力，以造成該板件之破壞。根據傳統製程，將流體分配板分開成同中心地嵌套結構已經證實將為中斷該等梯度之一相當有效的形式，且因此減少該等內部應力，同時維持製程一致性。然而，這顯著地增加零件之成本及可由於該等被分開的板件間之滑動而導致微粒。再者，以增加之動力需求，在此對於嵌套式板件之最佳幾何學組構用的進一步之板件最佳化可有一需要。 The fluid distribution elements and/or components used in the plasma system may be alumina ceramic (AL 2 O 3 ), fused cerium oxide (SiO 2 ), or other glass, ceramic, metal, or any suitable material. And / or a combination thereof. A downstream microwave plasma source similar to a plasma torch outputs a radial gas and creates an extreme temperature gradient across the impacted part. Further temperature differences between the center and the edge of the first panel to be contacted by the plasma are within a few hundred degrees Celsius. This gradient can create significant thermal stresses that can cause damage to the panel. Separating the fluid distribution plates into concentric nested structures has proven to be a fairly effective form of interrupting one of the gradients, and thus reducing such internal stresses, while maintaining process consistency, according to conventional processes. However, this significantly increases the cost of the part and can result in particulates due to sliding between the separated panels. Furthermore, with increased power requirements, there is a need for further board optimization for the optimal geometry of nested panels.
據此，在對於改良之流體分配元件及/或組件的技藝中有一需要，即維持電漿或氣體的均勻性及可耐受住高溫電漿或氣體製程期間所利用之各種條件(例如耐得住寬廣的熱梯度及相關的應力、及/或為經濟可行的、及/或係與複數化學性質相容的、及/或類似者)。 Accordingly, there is a need in the art for improved fluid dispensing elements and/or assemblies that maintain plasma or gas uniformity and withstand various conditions utilized during high temperature plasma or gas processing (eg, endurance). Living a broad thermal gradient and associated stress, and/or being economically viable, and/or compatible with complex chemical properties, and/or the like).
在此中所說明及所揭示者係流體分配元件組件，其被配置來減輕熱應力及減少該等折流板之毀滅性破壞的可能性。 The fluid reservoir component assemblies described and disclosed herein are configured to mitigate thermal stresses and reduce the likelihood of catastrophic failure of the baffles.
根據本發明之一示範具體實施例，供使用在基材處理系統中之流體分配元件組件包含一具有中心部份及周邊部份的流體分配元件。該流體分配元件界定形成穿過該流體分配元件之至少一個凹槽，且該至少一個凹槽沿著非徑向之路徑延伸，該非徑向之路徑被建構成允許該中心部份膨脹及相對於該周邊部份旋轉。 In accordance with an exemplary embodiment of the present invention, a fluid dispensing component assembly for use in a substrate processing system includes a fluid dispensing component having a central portion and a peripheral portion. The fluid distribution element defines at least one groove formed through the fluid distribution element, and the at least one groove extends along a non-radial path configured to allow the central portion to expand and relative to The peripheral portion is rotated.
根據本發明之一額外的示範具體實施例，基材處理設備包含一製程室，一工件可在該製程室中以電漿、熱氣體、或熱液體處理；及至少一流體分配元件，其設置在該製程室內，且被建構成將該電漿、氣體、或液體分配至該工件。該至少一流體分配元件包括一中心部份及一周邊部份，該至少一流體分配元件界定形成穿過該至少一流體分配元件之至少一個凹槽，且該至少一個凹槽沿著非徑向之路徑延伸，該非徑向之路徑被建構成允許該中心部份膨脹及相對 於該周邊部份旋轉。 According to an additional exemplary embodiment of the present invention, a substrate processing apparatus includes a process chamber in which a workpiece can be treated with plasma, hot gas, or hot liquid; and at least one fluid distribution element is disposed Within the process chamber, it is constructed to distribute the plasma, gas, or liquid to the workpiece. The at least one fluid distribution member includes a central portion and a peripheral portion, the at least one fluid distribution member defining at least one groove formed through the at least one fluid distribution member, and the at least one groove is along a non-radial The path extending, the non-radial path being constructed to allow the central portion to expand and relative Rotate in the peripheral part.
根據本發明之又另一示範具體實施例，用於電漿處理一基材之方法包含在電漿產生器中產生減少離子密度的電漿，將該減少離子密度的電漿引導經過一流體分配元件，及使一工件暴露至該減少離子密度的電漿。該流體分配元件包括一中心部份及一周邊部份，該流體分配元件界定形成穿過該流體分配元件之至少一個凹槽，且該至少一個凹槽沿著非徑向之路徑延伸，該非徑向之路徑被建構成允許該中心部份膨脹及相對於該周邊部份旋轉。 In accordance with still another exemplary embodiment of the present invention, a method for plasma treating a substrate includes generating a plasma-reducing plasma in a plasma generator, and directing the ion density-reducing plasma through a fluid distribution An element, and a plasma that exposes a workpiece to the reduced ion density. The fluid distribution member includes a central portion and a peripheral portion, the fluid distribution member defining at least one groove formed through the fluid distribution member, and the at least one groove extending along a non-radial path, the non-diameter The path is constructed to allow the center portion to expand and rotate relative to the peripheral portion.
該等上面敘述及其他特色係藉由以下之圖示及詳細的敘述來舉例說明。 The above description and other features are exemplified by the following drawings and detailed description.
本發明之示範具體實施例大致上係針對一供使用於電漿處理中之流體分配元件及/或組件。流體分配元件組件大致上可包含至少一流體分配元件，並具有形成穿過該至少一流體分配元件之一或多個連續式凹槽。至少一個凹槽沿著非徑向之路徑行進，該非徑向之路徑允許該流體分配元件之中心部份膨脹及相對於/相對一周邊部份旋轉。譬如，該凹槽之適當形狀/規劃可為至少一個凹槽之大體上螺旋或像螺旋的圖案。根據一些示範具體實施例，該至少一個凹槽之第一端部在一區域內開始，該區域位在離該流體分配元件的中心之半徑的2/3內，且在非徑向或螺旋之方向中往外延伸，該延伸可為彎曲的、曲線的或線性的，及 具有該流體分配元件半徑的至少1/3之總長度。此凹槽可為呈螺旋之形式、一組同中心的多邊形或任何另一合適之幾何形狀，其中該凹槽或該等凹槽具有允許包括該流體分配元件的材料之幾乎自由或相當地自由膨脹的作用。於操作期間，該電漿之氣體或高能的成份流經這些凹槽。當該元件加熱時，該凹槽或該等凹槽之存在允許該流體分配元件的中心區域幾乎自由地膨脹，造成該中心區域相對於該流體分配元件的外部、較冷區域之輕微旋轉。 Exemplary embodiments of the present invention are generally directed to a fluid dispensing element and/or assembly for use in a plasma treatment. The fluid distribution element assembly can generally include at least one fluid distribution element and have one or more continuous grooves formed through the at least one fluid distribution element. At least one groove travels along a non-radial path that allows the central portion of the fluid distribution member to expand and rotate relative to/with respect to a peripheral portion. For example, the appropriate shape/planning of the groove can be a substantially spiral or spiral-like pattern of at least one groove. According to some exemplary embodiments, the first end of the at least one groove begins in an area that is within 2/3 of the radius from the center of the fluid distribution element and is non-radial or spiral Extending outward in the direction, the extension may be curved, curved or linear, and Having a total length of at least 1/3 of the radius of the fluid distribution element. The groove may be in the form of a helix, a set of concentric polygons or any other suitable geometry, wherein the groove or grooves have almost free or substantial freedom to allow the material comprising the fluid distribution element The role of expansion. During operation, the gas or high energy components of the plasma flow through the grooves. The presence of the groove or grooves allows the central region of the fluid dispensing member to expand almost freely as the element heats, causing a slight rotation of the central region relative to the outer, cooler regions of the fluid dispensing member.
這些凹槽之功能目的為二轉折。由一製程觀點，該等凹槽重新分配氣體或流體流動，以達成幾乎最佳之乾燥灰化輪廓一致性。由零件結構完整性觀點，該等凹槽允許用於準不受約束的熱膨脹，以便幾乎使零件內的內部應力減至最小。藉由任何二個附近凹槽所界定的結構之幾何形狀為自行連接的，或不具有該流體分配元件的中間區域中之材料的支撐之作用。包括此結構的支撐元件之半切線式定向允許該中心區域中之材料膨脹，且本質上允許用於徑向之應變，同時經由該內部區域之相對極座標的運動來解除內部應力。 The function of these grooves is intended to be two turns. From a process perspective, the grooves redistribute gas or fluid flow to achieve nearly optimal dry ashing profile consistency. From the standpoint of structural integrity of the part, the grooves allow for quasi-unconstrained thermal expansion to minimize internal stresses within the part. The geometry of the structure defined by any two adjacent grooves is self-joining or does not have the support of the material in the intermediate region of the fluid distribution element. The semi-tangential orientation of the support member comprising this structure allows the material in the central region to expand and essentially allows for radial strain while simultaneously relieving internal stress via movement of the opposite polar coordinates of the inner region.
應注意的是雖然該“螺旋”一詞可被解釋為一很特定之數學名詞，而最容易使用極座標來敘述，其中該半徑係角度之連續的單調函數，或需要一由中心點沿著一路徑散發的曲線，該路徑離該中心點具有一漸進地增加的尺寸，其將被了解如在此中所使用之“螺旋”一詞係意指更大致上被解釋為彎曲的、線性的、曲線或呈直線的圖案，其在 由一點增加或減少距離地捲繞著該點。如此，該“螺旋”一詞被意指涵括任何一般發現的組構，其範圍由記錄曲線上之溝槽式凹槽分配至長方形之螺旋狀鋸齒；及任何組構，其類似於那些在此中所揭示之各種具體實施例中所描述者。 It should be noted that although the term "spiral" can be interpreted as a very specific mathematical term, it is easiest to use polar coordinates to describe, where the radius is a continuous monotonic function of the angle, or a point along the center point A path-spreading curve having a progressively increasing dimension from the center point, which will be understood as the term "spiral" as used herein to mean more generally interpreted as curved, linear, Curve or a straight line pattern, This point is wound by increasing or decreasing the distance. Thus, the term "spiral" is intended to encompass any generally discovered structure that ranges from a grooved groove on a record curve to a rectangular helical sawtooth; and any organization that resembles those in The various embodiments described herein are described.
下文，本發明將參考所附圖面更充分地被敘述，而本發明之示範具體實施例在所附圖面中被顯示。 In the following, the invention will be described more fully with reference to the drawings, and exemplary embodiments of the invention are shown in the drawings.
圖1說明一示範的光阻材料灰化器10，大致上包括一氣體盒子12；一微波電漿產生器組件14；一界定內部孔腔的製程室16，而在該製程室中處理半導體基材、諸如晶圓18；及一輻射的加熱器組件20，用於加熱位在該製程室的底部之晶圓18。諸如熱電偶之溫度探針24通常於操作期間被使用於監視該晶圓18的溫度。真空幫浦26被使用於將該製程室16抽真空，而用於需要真空條件的製程。 1 illustrates an exemplary photoresist material ashing unit 10, generally including a gas box 12; a microwave plasma generator assembly 14; a process chamber 16 defining an internal bore in which the semiconductor substrate is processed Materials, such as wafer 18; and a radiant heater assembly 20 for heating wafers 18 located at the bottom of the process chamber. A temperature probe 24, such as a thermocouple, is typically used to monitor the temperature of the wafer 18 during operation. Vacuum pump 26 is used to evacuate process chamber 16 for processes requiring vacuum conditions.
一選擇性之單色發光器28被使用來監視該室內之氣體的光學放射特徵，以輔助製程終點決定。經由適當的負載鎖定機件(未示出)通過入口/出口通道30，該晶圓18被導入該製程室16及由該製程室16移去。交替地，如果該工具未配備有一負載鎖，該晶圓18可經過該入口/出口通道30被直接地導入該製程室16。雖然本揭示內容被顯示及其特徵為在一光阻材料灰化器內施行，其亦可被使用於另一半導體製造設備、諸如電漿蝕刻機或電漿沈積系統。譬如，特別適合用於本揭示內容中之修改的下游軸向流動電漿設備譬如為電漿灰化器，諸如那些在該商品名稱 RadiantStrip320之下可用及市售來自艾克塞利斯科技(Axcelis technologies)公司的微波電漿灰化器。該微波電漿灰化器之各部份被敘述在美國專利第5,498,308及4,341,592號及PCT國際專利申請案第WO/97/37055號中，其全部以引用的方式併入本文中。如將在下面被討論者，在此或於以下之具體實施例中，該揭示內容係不意欲受限於任何特別之電漿灰化器。例如，該處理電漿能為由使用有及沒有DC磁鐵系統的平行板件、電容性耦合電漿來源、一電感性耦合電漿來源、及其任何組合所形成。交替地，該處理電漿能為使用電子迴旋共振所形成。於又另一具體實施例中，該處理電漿係由一螺旋波之發射所形成。於又另一具體實施例中，該處理電漿係由一傳播之表面波所形成。此外，該揭示內容涵括任何需要氣體或電漿分配的半導、體製程設備，在此該氣體或電漿分配之元件在該分配系統之玻璃、熔合的二氧化矽、陶瓷及/或金屬元件上包括一充分之熱負載，使得該等材料將遭受應力斷裂或扭曲。 A selective monochromatic illuminator 28 is used to monitor the optical emission characteristics of the gas within the chamber to aid in process endpoint determination. The wafer 18 is introduced into and removed from the process chamber 16 via an inlet/outlet passage 30 via a suitable load lock mechanism (not shown). Alternately, if the tool is not equipped with a load lock, the wafer 18 can be directly introduced into the process chamber 16 through the inlet/outlet passage 30. Although the present disclosure is shown and characterized as being implemented within a photoresist material asher, it can also be used in another semiconductor fabrication facility, such as a plasma etcher or plasma deposition system. For example, downstream axial flow plasma devices that are particularly suitable for use in the modifications of the present disclosure are, for example, plasma ashers, such as those in the trade name Microwave plasma ashers from Axcelis technologies are available under the RadiantStrip320. The various portions of the microwave plasma ashers are described in U.S. Patent Nos. 5,498,308 and 4,341, 592, the entire disclosure of which is incorporated herein by reference. As will be discussed below, in this or in the following specific examples, the disclosure is not intended to be limited to any particular plasma asher. For example, the processing plasma can be formed from a parallel plate using a DC magnet system, a capacitively coupled plasma source, an inductively coupled plasma source, and any combination thereof. Alternately, the treated plasma can be formed using electron cyclotron resonance. In yet another embodiment, the processing plasma is formed by the emission of a spiral wave. In yet another embodiment, the processing plasma is formed by a propagated surface wave. In addition, the disclosure encompasses any semi-conducting, institutional process equipment requiring gas or plasma distribution, where the gas or plasma distribution component is in the glass, fused ceria, ceramic and/or metal of the distribution system. The component includes a sufficient thermal load such that the material will suffer stress cracking or distortion.
定位在該電漿室16內者係一流體分配元件或組件，大致上標以參考數字50。雖然被顯示為單層式流體分配元件組件，其係意圖該流體分配元件組件可採取一或多個流體分配元件之形式。同樣地，該單層式流體分配元件組件可在其上面另包含一撞擊盤片，諸如大致上被揭示於美國專利公告第2004/0238123號中者，其係據此全部以引用的方式併入本文中。於上面所敘述之具體實施例的任一者中，該等流體分配元件及/或組件平均地分配該反應氣體或電 漿越過待處理之晶圓表面18。如將在此中更詳細地被討論，該等流體分配元件之至少一者包含該螺旋式凹槽結構，如在下面更詳細地討論者，其已被發現在操作期間使熱應力減至最小。 Positioned within the plasma chamber 16 is a fluid dispensing element or assembly, generally designated by the reference numeral 50. Although shown as a single layer fluid dispensing element assembly, it is intended that the fluid dispensing element assembly can take the form of one or more fluid dispensing elements. Likewise, the single-layer fluid dispensing element assembly can include a percussive disc thereon, such as generally disclosed in U.S. Patent Publication No. 2004/0238123, which is hereby incorporated by reference in its entirety. In this article. In any of the specific embodiments described above, the fluid distribution elements and/or components evenly distribute the reactive gas or electricity The slurry passes over the surface 18 of the wafer to be processed. As will be discussed in greater detail herein, at least one of the fluid dispensing elements comprises the helical groove structure, as discussed in more detail below, which has been found to minimize thermal stress during operation. .
翻至圖2，傳統、單件式流體分配元件組件200被說明。該流體分配元件組件200大致上包含一陣列之孔洞，該氣體或電漿流動經過該等孔洞。該孔洞圖案、孔洞尺寸、及孔洞密度被選擇，以將該氣體或電漿分配在該工作表面之上。 Turning to Figure 2, a conventional, one-piece fluid dispensing element assembly 200 is illustrated. The fluid distribution component assembly 200 generally includes an array of holes through which the gas or plasma flows. The hole pattern, hole size, and hole density are selected to dispense the gas or plasma over the work surface.
翻至圖3，單一個流體分配元件組件300被說明。如所示，該流體分配元件組件300包含一被切割/形成穿過該流體分配元件組件300之凹槽310(第一凹槽)，其中該凹槽310在該半徑340的2/3之區域處開始，如由該分配元件之中心320所測量及持續進行朝向該外部邊緣。依據此示範具體實施例，該切割路徑長度330係大於或等於該板件半徑(340)的1/3。 Turning to Figure 3, a single fluid dispensing element assembly 300 is illustrated. As shown, the fluid dispensing element assembly 300 includes a recess 310 (first recess) that is cut/formed through the fluid dispensing element assembly 300, wherein the recess 310 is in the 2/3 region of the radius 340 The beginning begins as measured by the center 320 of the dispensing element and continues toward the outer edge. According to this exemplary embodiment, the cutting path length 330 is greater than or equal to 1/3 of the plate radius (340).
現在翻至圖4，單一個流體分配元件組件400被說明。如所示，該流體分配元件組件400包含一被切割/形成穿過該流體分配元件組件400之螺旋式凹槽410(第一凹槽)。該凹槽410由該流體分配元件中心在該流體分配元件半徑的2/3內之區域開始，且延伸至一由該流體分配元件中心進一步往外的區域，其中該凹槽路徑長度係大於或等於該流體分配元件半徑的1/3。該螺旋式凹槽410可被考慮為穿過該流體分配元件400所形成或切割之恆定或變化寬 度的任一種。如所示，該螺旋式凹槽410包含第一端部430及第二端部420。該第二端部比該第一端部由該分配元件中心進一步往外地停止，且該凹槽包含大於或等於該分配元件半徑的1/3之總路徑長度。如需要，該凹槽410之寬度可為由第一端部430變化至該第二端部420，以如需要地控制該氣體或電漿流動，以在位於該流體分配元件400下游的工件之上獲得一相當均勻之流動。 Turning now to Figure 4, a single fluid dispensing element assembly 400 is illustrated. As shown, the fluid distribution element assembly 400 includes a helical groove 410 (first groove) that is cut/formed through the fluid distribution element assembly 400. The groove 410 begins at a region of the fluid distribution member centered within 2/3 of the radius of the fluid distribution member and extends to a region further outward from the center of the fluid distribution member, wherein the groove path length is greater than or equal to The fluid distribution element has a radius of 1/3. The helical groove 410 can be considered to be constant or variable width formed or cut through the fluid distribution element 400. Any of the degrees. As shown, the spiral groove 410 includes a first end 430 and a second end 420. The second end portion is further outwardly displaced from the center of the dispensing member than the first end portion, and the groove includes a total path length greater than or equal to 1/3 of the radius of the dispensing member. If desired, the width of the groove 410 can be varied from the first end 430 to the second end 420 to control the flow of gas or plasma as needed to the workpiece located downstream of the fluid distribution element 400. Get a fairly even flow on it.
如已注意者，該螺旋式凹槽410併入一螺距440。由該螺旋式凹槽410之第一端部430至第二端部420，如所特別說明的，此螺距可為恆定的，或可能根據任何想要之措失有不同的變化。如額外被注意者，該螺旋式凹槽410由該流體分配元件組件之中心往外延伸，如由該螺旋式凹槽410之半徑所測量。然而，該螺旋式凹槽410可同樣被敘述為朝內前進。 As noted, the helical groove 410 incorporates a pitch 440. From the first end 430 to the second end 420 of the helical groove 410, as specifically noted, the pitch may be constant or may vary differently depending on any desired loss. As additionally noted, the helical groove 410 extends outwardly from the center of the fluid dispensing element assembly as measured by the radius of the helical groove 410. However, the helical groove 410 can likewise be described as advancing inward.
雖然在上面以單一螺旋式凹槽之觀點來說明及敘述，應了解一或多個凹槽可根據任何想要之措失被形成穿過一流體分配元件組件。譬如，現在翻至圖5，包含二個螺旋式凹槽410及510(第二凹槽)的流體分配元件組件500具有開始端430及530與終端420及520。如所說明，該等螺旋之至少一者的路徑長度係大於或等於該流體分配元件500的半徑之1/3。 Although illustrated and described above in terms of a single helical groove, it will be appreciated that one or more grooves may be formed through a fluid distribution component assembly in accordance with any desired loss. For example, turning now to FIG. 5, a fluid distribution component assembly 500 including two helical grooves 410 and 510 (second grooves) has start ends 430 and 530 and terminals 420 and 520. As illustrated, at least one of the spirals has a path length greater than or equal to one-third of the radius of the fluid distribution element 500.
現在翻至圖6，包含複數凹槽610(第一凹槽)的流體分配元件組件600被說明。如所示，該複數凹槽610被切割或形成進入該流體分配元件600，其中該等凹槽之至少一 者在該流體分配元件之半徑的2/3內由該中心開始，且延伸大於或等於該流體分配元件半徑的1/3之總路徑長度。 Turning now to Figure 6, a fluid dispensing element assembly 600 including a plurality of grooves 610 (first grooves) is illustrated. As shown, the plurality of grooves 610 are cut or formed into the fluid dispensing element 600, wherein at least one of the grooves The center begins at 2/3 of the radius of the fluid distribution element and extends for a total path length greater than or equal to 1/3 of the radius of the fluid distribution element.
如所示，該等凹槽610沿著非徑向之路徑行進，而允許該分配元件600的中心部份膨脹及相對於該周邊部份旋轉。再者，因該等凹槽610間之部份640膨脹(例如“腿部”)，該等部份640在該中心部份上切線地推動，造成其旋轉。以此方式，熱及機械式應力被放鬆。 As shown, the grooves 610 travel along a non-radial path allowing the central portion of the dispensing member 600 to expand and rotate relative to the peripheral portion. Moreover, as portions 640 between the grooves 610 expand (e.g., "legs"), the portions 640 are tangentially urged on the central portion causing them to rotate. In this way, thermal and mechanical stresses are relaxed.
應注意的是雖然該等凹槽610被展示為彎曲的，該等凹槽610亦可為線性的，大致上由該分配元件600的中心部份非徑向地延伸，藉此被設置來造成上面所述之機械式旋轉。譬如，圖7描述一具有線性凹槽之流體分配元件組件，該等線性凹槽由流體分配元件組件的中心部份非徑向地延伸。於對比下，傳統之徑向延伸凹槽或溝槽(譬如，如於美國專利第6,444,040號中所揭示者)，當被暴露至熱時，將徑向地推動在該分配元件的中心部份上，造成壓縮。同樣地，該中心部份將向外膨脹，造成額外之應力。 It should be noted that although the grooves 610 are shown as being curved, the grooves 610 may also be linear, extending substantially non-radially from the central portion of the dispensing member 600, thereby being configured to cause Mechanical rotation as described above. For example, Figure 7 depicts a fluid dispensing element assembly having linear grooves that extend non-radially from a central portion of the fluid dispensing element assembly. In contrast, a conventional radially extending groove or groove (as disclosed in U.S. Patent No. 6,444,040), when exposed to heat, will be radially urged in the central portion of the dispensing member. On, causing compression. As such, the center portion will expand outwardly, causing additional stress.
現在翻至圖7，包含複數凹槽710(第一凹槽)的流體分配元件組件700被說明。如所示，複數凹槽710被切割或形成進入該流體分配元件700，其中該等凹槽之至少一者在該流體分配元件之半徑的2/3內由該中心開始，且延伸大於或等於該流體分配元件半徑的1/3之總路徑長度。 Turning now to Figure 7, a fluid dispensing element assembly 700 including a plurality of grooves 710 (first grooves) is illustrated. As shown, the plurality of grooves 710 are cut or formed into the fluid dispensing element 700, wherein at least one of the grooves begins at the center within 2/3 of the radius of the fluid dispensing element and extends greater than or equal to The total path length of 1/3 of the radius of the fluid distribution element.
如所示，該等凹槽710沿著非徑向之路徑行進，而允許該分配元件700的中心部份膨脹及相對於該周邊部份旋轉。再者，因該等凹槽710間之部份740膨脹(例如“腿 部”)，該等部份740在該中心部份上切線地推動，造成其旋轉。以此方式，熱及機械式應力被放鬆。 As shown, the grooves 710 travel along a non-radial path, allowing the central portion of the dispensing element 700 to expand and rotate relative to the peripheral portion. Furthermore, due to the expansion of the portion 740 between the grooves 710 (for example, "legs" The portion 740 is tangentially urged on the central portion to cause it to rotate. In this manner, thermal and mechanical stresses are relaxed.
如此，如上面所述，本發明之示範具體實施例包含流體分配元件組件，其包括一或多個形成穿過該流體分配元件組件之凹槽或諸凹槽。這些凹槽之形狀及定向可為圓形或像螺旋的，由該流體分配元件的中心部份非徑向地延伸。然而，如上述所提及根據額外之示範具體實施例，該一或多個凹槽可被分段或由不同片段所形成，如圖8-9所示。 Thus, as described above, exemplary embodiments of the present invention comprise a fluid dispensing element assembly that includes one or more grooves or grooves formed through the fluid dispensing element assembly. The grooves may be circular or spiral-like in shape and orientation, extending non-radially from a central portion of the fluid distribution member. However, as mentioned above, according to additional exemplary embodiments, the one or more grooves may be segmented or formed from different segments, as shown in Figures 8-9.
翻至圖8，該凹槽810(第一凹槽)具有一位在該流體分配元件800半徑的2/3內之開始端830，如由該中心所測量，且穿過一系列被連接之直線片段往外持續進行朝向一端部820，其中該系列直線之總路徑長度係大於或等於該分配元件半徑的1/3。這些直線可為直角的，如在圖8中所示，或可為一系列被連接之非直角的線段910，如圖9所示。流體分配元件900之各片段910在點930開始及往外延伸至一終點920，其中該總路徑長度係大於或等於該流體分配元件半徑的1/3。 Turning to Figure 8, the groove 810 (first groove) has a start end 830 within 2/3 of the radius of the fluid distribution element 800, as measured by the center, and passed through a series of connected The line segments continue outwardly toward one end 820, wherein the total path length of the series of lines is greater than or equal to 1/3 of the radius of the distribution element. These lines may be right angles, as shown in Figure 8, or may be a series of connected non-orthogonal line segments 910, as shown in Figure 9. Each segment 910 of fluid distribution element 900 begins at point 930 and extends outwardly to an end point 920, wherein the total path length is greater than or equal to one-third the radius of the fluid distribution element.
額外地，示範具體實施例可包含上面所述之開槽式及/或穿透孔特色的任何組合。譬如，如在圖10所示，流體分配元件組件1000可包含形成穿過該流體分配元件組件1000之至少一凹槽410，並在該板件半徑的2/3內由該板件中心開始及往外延伸，具有大於或等於該流體分配元件半徑的1/3之總路徑長度，而與一或多個孔洞210及凹槽1010 (第三凹槽)結合。 Additionally, exemplary embodiments may include any combination of slotted and/or through hole features described above. For example, as shown in FIG. 10, the fluid distribution component assembly 1000 can include at least one recess 410 formed through the fluid distribution component assembly 1000 and begin within the center of the panel within 2/3 of the radius of the panel. Extending outwardly, having a total path length greater than or equal to 1/3 of the radius of the fluid distribution element, and one or more holes 210 and grooves 1010 (third groove) combined.
應了解雖然被敘述及說明為大體上可被考慮為平面式的一般流體分配元件組件，該流體分配元件組件可根據任何想要之措失被變化。譬如，圖11A-11E描述按照示範具體實施例的流體分配元件之側視圖及截面視圖。 It will be appreciated that while described and illustrated as a general fluid dispensing component assembly that can generally be considered a planar type, the fluid dispensing component assembly can be varied in accordance with any desired cues. For example, Figures 11A-11E depict side and cross-sectional views of a fluid dispensing element in accordance with an exemplary embodiment.
如在圖11A中所說明，流體分配元件可包含複合之第一表面1111及緊接的側壁1110，該第一表面1111被以大致上凸出或凹入之方式配置。應了解上面所提及之螺旋式配置的任一者可被形成在該第一表面1101上。該等側壁1110可為大致上平坦的，並可圍繞該整個流體分配元件1101。另一選擇係，該等側壁1110可為複合式，並可包含鎖定機構或突出部份，以譬如促進該流體分配元件之配置於一處理設備中，如在圖1中所說明。 As illustrated in FIG. 11A, the fluid distribution member can include a composite first surface 1111 and an immediately adjacent sidewall 1110 that is configured to be generally convex or concave. It should be understood that any of the screw configurations mentioned above may be formed on the first surface 1101. The side walls 1110 can be substantially flat and can surround the entire fluid distribution element 1101. Alternatively, the side walls 1110 can be composite and can include a locking mechanism or protrusion to facilitate deployment of the fluid dispensing element in a processing apparatus, as illustrated in FIG.
如在圖11B中所說明，一流體分配元件1102可包含一緊接至側壁1120之大體上平面式第一表面1122。該等側壁1120大致上可為平坦的，及可圍繞該整個流體分配元件1101。該流體分配元件1102可另包含緊接至該等側壁1120之突出部份1121，譬如被建構成促進該流體分配元件之配置於一處理設備中，如在1圖中所說明。 As illustrated in FIG. 11B, a fluid dispensing element 1102 can include a generally planar first surface 1122 that abuts the sidewall 1120. The side walls 1120 can be substantially flat and can surround the entire fluid dispensing element 1101. The fluid dispensing element 1102 can further include a protruding portion 1121 that is immediately adjacent to the side walls 1120, such as being configured to facilitate placement of the fluid dispensing element in a processing apparatus, as illustrated in FIG.
如在圖11C中所說明，一流體分配元件1103可為大體上平面式。 As illustrated in Figure 11C, a fluid dispensing element 1103 can be generally planar.
如在圖11D中所說明，流體分配元件1104可為大體上平面式與變化的厚度。該流體分配元件1104可包含一大體上平面式第一表面1141及一相反、大體上凹入的第二表面 1140。 As illustrated in Figure 11D, the fluid dispensing element 1104 can be substantially planar and varying in thickness. The fluid distribution element 1104 can include a substantially planar first surface 1141 and an opposite, substantially concave second surface 1140.
如在圖11E中所說明，一流體分配元件1105可包含二個相反及大體上凹入的表面1150及1151。 As illustrated in Figure 11E, a fluid dispensing element 1105 can include two opposing and substantially concave surfaces 1150 and 1151.
如在圖12及16中所說明，該示範的多件式流體分配元件組件50可選擇性地包含一形成在流體分配元件52上之六角形開口56、及一被建構來裝配在該開口56內的六角形***部份54。應變得明顯的是該開口56及該***部份54之形狀可為任何想要或適當之形狀者。再者，該流體分配元件52可包含超過一個***部份。於所顯示之示範具體實施例中，該六角形之形狀被建構來調節一些或所有與下游電漿灰化器有關聯之熱應力，其中該電漿最初在很大程度上撞擊該流體分配元件的中心區域。然而，此一配置可被同樣地適用於任何另一電漿製程。如先前所述，形成該流體分配元件組件50的環狀環部以及元件之數目能界定任一開口形狀。再者，雖然申請人提及一環狀之環部，其係意圖使各種元件不包含一環狀之環部。反之，該多數元件被建構及製成，以便形成該流體分配元件52之單一層。再者，一鎖定機構可被包含，以將該流體分配元件52維持於一大致上平面式組構中，且良好地在那些熟諳該技藝者的技術內。 As illustrated in Figures 12 and 16, the exemplary multi-piece fluid dispensing element assembly 50 can optionally include a hexagonal opening 56 formed in the fluid dispensing member 52, and a structure configured to fit within the opening 56. The inner hexagonal insertion portion 54. It should be apparent that the shape of the opening 56 and the insertion portion 54 can be any desired or suitable shape. Again, the fluid distribution element 52 can include more than one insertion portion. In the exemplary embodiment shown, the hexagonal shape is configured to adjust some or all of the thermal stress associated with the downstream plasma asher, wherein the plasma initially impacts the fluid distribution element to a large extent. Central area. However, this configuration can be equally applied to any other plasma process. As previously described, the annular ring portion forming the fluid distribution element assembly 50 and the number of elements can define any opening shape. Furthermore, although the Applicant refers to an annular ring portion, it is intended that the various elements do not include an annular ring portion. Instead, the majority of the components are constructed and fabricated to form a single layer of the fluid distribution component 52. Further, a locking mechanism can be included to maintain the fluid dispensing member 52 in a generally planar configuration, and is well within the skill of those skilled in the art.
該撞擊盤片/***部份54可為由包括該環狀之環部/流體分配元件52的類似或不同之材料所形成。該撞擊盤片54可包含大致上配置穿過該撞擊盤片54之孔口68、或切穿過該撞擊盤片54之凹槽、或切穿過該撞擊盤片54之孔 口或凹槽的任一組合、或可為無孔口的或可包含一中心無孔口的區域，而具有配置在其四周的外接孔口或凹槽。 The impact disk/insert portion 54 can be formed from a similar or different material including the annular ring/fluid distribution element 52. The impact disk 54 can include an aperture 68 that is generally disposed through the impact disk 54 or a slot that cuts through the impact disk 54 or that cuts through the impact disk 54 Any combination of ports or grooves, or may be non-porous or may include a central non-perforated area with external apertures or grooves disposed around it.
雖然被敘述及說明為孔口，應了解將這些孔口限制於所說明之恆定的直徑、幾何形狀、遞減的內徑、或特別配置係不適當的。譬如，透過該等孔口68之配置、幾何形狀、尺寸、及其他特徵的操縱，藉由在該流體分配元件組件所提供之灰化速率及均勻性可被調整至各種方案。交替地，該撞擊盤片亦可包含一螺旋式凹槽(未示出)，諸如大致上被界定用於該環狀之環部52。 Although described and illustrated as orifices, it should be understood that limiting the orifices to the illustrated constant diameter, geometry, decreasing inner diameter, or special configuration is not appropriate. For example, the ashing rate and uniformity provided by the fluid distribution component assembly can be adjusted to various solutions through the manipulation of the configuration, geometry, dimensions, and other features of the orifices 68. Alternately, the impact disk may also include a helical groove (not shown), such as a ring portion 52 that is generally defined for the ring.
圖13描述一微波下游灰化器中的流體分配元件在操作中之示範的溫度分佈線圖。該熱梯度之量值超過攝氏400度/公分。於圖2所示之示範的流體分配元件中，包含集中該熱應力之折流板孔洞，此一溫度分佈線圖能造成熱應力很好地超過300百萬帕(MPa)。 Figure 13 depicts an exemplary temperature profile of the fluid distribution element in a microwave downstream asher in operation. The magnitude of this thermal gradient exceeds 400 degrees Celsius / cm. In the exemplary fluid distribution element shown in Figure 2, a baffle hole that concentrates the thermal stress is included, and this temperature profile can cause thermal stress to well exceed 300 megapascals (MPa).
圖14及圖15描述沿著路徑1420之溫度分佈線圖，用於單一螺旋式凹槽1410(第一凹槽)並用於微波下游電漿灰化器中所使用之流體分配元件1400。如能夠在圖15中被看見，於路徑長度中，該溫度係幾乎線性的，且該熱梯度之量值係比圖2中所顯示之示範的流體分配元件低數個量級。所計算之由於熱膨脹的最大應力被減少至少於大約3百萬帕(MPa)。如所說明，該流體分配元件溫度分佈線圖已基於具有恆定螺距之螺旋式切割流體分配元件被設計成模型。 Figures 14 and 15 depict a temperature profile along path 1420 for a single helical groove 1410 (first groove) and for the fluid distribution element 1400 used in the microwave downstream plasma asher. As can be seen in Figure 15, the temperature is nearly linear over the path length and the magnitude of the thermal gradient is several orders of magnitude lower than the exemplary fluid distribution element shown in Figure 2. The calculated maximum stress due to thermal expansion is reduced by at least about 3 megapascals (MPa). As illustrated, the fluid distribution element temperature profile is modeled as a model based on a helical cutting fluid dispensing element having a constant pitch.
按照在此中所揭示之具體實施例的任一者之流體分配 元件較佳地係由陶瓷材料、熔合的二氧化矽、金屬或玻璃所形成。合適之陶瓷材料包含、但不意欲受限於氧化鋁(各種氧化物)、二氧化鋯、諸如碳化矽、碳化硼之各種碳化物、諸如氮化矽、氮化鋁、氮化硼之各種氮化物、石英、二氧化矽、諸如氮氧化矽之各種氮氧化物等等，以及具有諸如鎂、釔、氧化鐠、鉿的元素之穩定的陶瓷等等。合適之金屬包含、但不意欲受限於鋁、鋁合金、不銹鋼、鈦、鈦合金、矽等等。選擇性地，該下方之單件式流體分配元件可為相同或不同的材料，典型為熔合的二氧化矽或陽極鋁。 再者，該流體分配元件及/或撞擊盤片可被塗以第二材料，譬如，Al2O3、CeO、SiO2、TiO2、Si、及/或Ta3O4。 The fluid distribution element according to any of the specific embodiments disclosed herein is preferably formed of a ceramic material, fused ceria, metal or glass. Suitable ceramic materials include, but are not intended to be limited to, alumina (various oxides), zirconium dioxide, various carbides such as tantalum carbide, boron carbide, various nitrogens such as tantalum nitride, aluminum nitride, boron nitride. Compounds, quartz, cerium oxide, various nitrogen oxides such as cerium oxynitride, and the like, and stable ceramics having elements such as magnesium, cerium, lanthanum oxide, cerium, and the like. Suitable metals include, but are not intended to be limited to, aluminum, aluminum alloys, stainless steel, titanium, titanium alloys, tantalum, and the like. Alternatively, the underlying one-piece fluid dispensing element can be the same or different materials, typically fused cerium oxide or anodized aluminum. Furthermore, the fluid distribution element and/or the impact disk can be coated with a second material such as Al 2 O 3 , CeO, SiO 2 , TiO 2 , Si, and/or Ta 3 O 4 .
該流體分配元件可額外地非平面式，但可為彎曲或薄化的，譬如，在該中心薄化，以增強機械式穩定性。再者，應了解該多數流體分配元件可被使用於單一電漿處理室中，譬如，被配置為一或多個螺旋式流體分配元件的一堆疊，其中該等螺旋係在不同的位置上，以減少視線。額外地，該等凹槽可在一角度、譬如在離該表面法線45度處被切割。 The fluid distribution element may additionally be non-planar, but may be curved or thinned, for example, thinned at the center to enhance mechanical stability. Furthermore, it will be appreciated that the majority of the fluid distribution elements can be used in a single plasma processing chamber, such as a stack of one or more helical fluid distribution elements, wherein the spirals are at different locations, To reduce the line of sight. Additionally, the grooves can be cut at an angle, such as 45 degrees from the surface normal.
如上面所詳細地揭示及敘述者，本發明之示範具體實施例可包含諸如越過陶瓷折流板及/或流體分配元件組件均勻冷卻並因而減少破裂之風險、及用於電漿處理系統的流體分配元件組件之簡化的結構之優點。這些流體分配元件組件可被使用於任何可適用之方法，用於基材之電漿處理。 As disclosed and described in detail above, exemplary embodiments of the present invention may include fluids such as uniform cooling over ceramic baffles and/or fluid distribution component assemblies and thereby reducing the risk of cracking, and fluids used in plasma processing systems. The advantages of a simplified structure for allocating component components. These fluid distribution component assemblies can be used in any applicable method for plasma processing of substrates.
譬如，根據一示範具體實施例，圖17描述一用於工件的電漿處理之方法。在區域1701，該方法1700亦可包含於電漿產生器中產生減少的離子密度電漿。 For example, Figure 17 depicts a method for plasma processing of a workpiece, in accordance with an exemplary embodiment. In region 1701, the method 1700 can also be included in a plasma generator to produce a reduced ion density plasma.
在區域1702，該方法1700亦可另包含將該減少之離子密度電漿引導經過一流體分配元件。如上面所述，該流體分配元件可包含一中心部份及一周邊部份，而具有至少一個凹槽形成穿過該流體分配元件。該至少一個凹槽可沿著一非徑向之路徑延伸，且被建構成在該方法1700期間允許該中心部份膨脹及相對於該周邊部份旋轉。 In region 1702, the method 1700 can additionally include directing the reduced ion density plasma through a fluid distribution element. As described above, the fluid dispensing member can include a central portion and a peripheral portion with at least one groove formed through the fluid dispensing member. The at least one groove can extend along a non-radial path and is configured to allow the central portion to expand and rotate relative to the peripheral portion during the method 1700.
該方法1700另包含將該工件暴露至該減少離子密度的電漿。 The method 1700 additionally includes exposing the workpiece to the reduced ion density of the plasma.
應了解雖然示範具體實施例被以用於減少離子密度暴露的下游電漿處理設備及方法之觀點敘述，示範具體實施例不被受限於此。流體分配元件組件之示範具體實施例係可適用於任何合適的電漿處理系統，不論是否高頻電磁電漿處理或任何另一合適的系統，在此流體分配元件之使用係想要的。 It will be appreciated that while the exemplary embodiments are described in terms of downstream plasma processing apparatus and methods for reducing ion density exposure, exemplary embodiments are not limited thereto. Exemplary embodiments of fluid distribution component assemblies are applicable to any suitable plasma processing system, whether or not high frequency electromagnetic plasma processing or any other suitable system, where the use of fluid dispensing elements is desired.
額外地，應了解該等上面名詞之任一者及在下面所使用的任何新名詞應被解釋為代表該等名詞之最能邏輯了解的定義，如將被普通熟諳設計、測試、形成、製造、或採用在此中所敘述之示範具體實施例的技藝者所了解。 In addition, it should be understood that any of the above nouns and any new nouns used below shall be construed as representing the most logical definition of the terms, such as being designed, tested, formed, and manufactured by ordinary skill. It will be appreciated by those skilled in the art of the exemplary embodiments described herein.
如在此中所使用之用語係為著要僅只敘述特別具體實施例之目的，且係不意欲為示範具體實施例之限制。如在此中所使用，該單數形式“一(a)”、“一(an)”及“該 (the)”係意欲同樣包含該複數形式，除非該上下文清楚地以別的方式指示。當在此中被使用時，其將被進一步了解該等名詞“包括(comprises)”、“包括(comprising)”、“包含(includes)”及/或“包含(including)”指定所陳述之特色、整體、步驟、操作、元件、及/或零組件的存在，但不排除一或多個其他特色、螺距因數、蝕刻、塗層、額外之凹槽組構、或任何其他合適或想要的特色之存在或加入。 The words used herein are for the purpose of describing particular embodiments only and are not intended to As used herein, the singular forms "a", "an" and "the" (the) is intended to include the plural form, unless the context clearly indicates otherwise. When used herein, it will be further understood that the terms "comprises" and "comprising" "," "includes" and/or "including" designates the stated features, integers, steps, operations, components, and/or components, but does not exclude one or more other features. The presence or addition of pitch factor, etching, coating, additional groove configuration, or any other suitable or desired feature.
雖然本發明已參考示範具體實施例被敘述，其將被那些熟諳此技藝者所了解，各種變化可被作成，且同等項可被用於其上之元件所替代，而不會由本發明之範圍脫離。此外，很多修改可被作成，以使特別之狀態或材料順應本發明之教導，而不會由其本質上之範圍脫離。因此，其係意欲使本發明不被限制於被揭示為意圖用於執行本發明之最佳或唯一模式的特別具體實施例，而是本發明將包含落在所附申請專利之範圍內的所有具體實施例。於該等圖面及該敘述中，在此亦已揭示本發明之示範具體實施例，且雖然特定之名詞可能已被採用，除非以別的方式陳述，它們僅只被使用於一般及記述性意義，且不用於限制之目的，本發明之範圍因此不被如此限制。再者，第一、第二等名詞之使用不標示任何順序或重要性，反之第一、第二等名詞被使用於區別一元件與另一元件。再者，一(a)、一(an)等名詞之使用不標示數量之限制，反之標示所參考項目之至少一參考項目的存在。 Although the present invention has been described with reference to the exemplary embodiments thereof, it will be understood by those skilled in the art that various changes can be made and equivalents can be substituted by the elements used thereon without the scope of the present invention. Get rid of. In addition, many modifications may be made to adapt a particular state or material to the teachings of the invention without departing from the scope. Therefore, it is intended that the invention not be limited to the particular embodiments of the invention Specific embodiment. Exemplary embodiments of the present invention have been disclosed herein and in the description, and although specific nouns may have been employed, unless otherwise stated, they are only used in a generic and descriptive sense. It is not intended to be limiting, and the scope of the invention is therefore not so limited. Furthermore, the use of the first and second nouns does not indicate any order or importance, and the first and second terms are used to distinguish one element from another. Furthermore, the use of a noun such as (a), an (an), etc. does not indicate a limitation of quantity, and instead indicates the existence of at least one reference item of the referenced item.
10‧‧‧光阻材料灰化器 10‧‧‧Photoresist material ashifier
12‧‧‧氣體盒子 12‧‧‧ gas box
14‧‧‧微波電漿產生器組件 14‧‧‧Microwave plasma generator assembly
16‧‧‧製程室 16‧‧‧Processing Room
18‧‧‧晶圓 18‧‧‧ Wafer
20‧‧‧加熱器組件 20‧‧‧heater assembly
24‧‧‧溫度探針 24‧‧‧ Temperature probe
26‧‧‧真空幫浦 26‧‧‧vacuum pump
28‧‧‧單色發光器 28‧‧‧ Monochrome illuminator
30‧‧‧入口/出口通道 30‧‧‧Entry/Exit Channel
50‧‧‧流體分配元件 50‧‧‧ Fluid distribution components
52‧‧‧流體分配元件 52‧‧‧ Fluid distribution components
54‧‧‧六角形***部份 54‧‧‧ hexagonal insert
56‧‧‧六角形開口 56‧‧‧ hexagonal opening
68‧‧‧孔口 68‧‧‧孔口
200‧‧‧流體分配元件組件 200‧‧‧Fluid distribution component assembly
210‧‧‧孔洞 210‧‧‧ holes
300‧‧‧流體分配元件組件 300‧‧‧Fluid distribution component assembly
310‧‧‧凹槽 310‧‧‧ Groove
320‧‧‧中心 320‧‧‧ Center
330‧‧‧切割路徑長度 330‧‧‧ Cutting path length
340‧‧‧板件半徑 340‧‧‧plate radius
400‧‧‧流體分配元件組件 400‧‧‧Fluid distribution component assembly
410‧‧‧螺旋式凹槽 410‧‧‧Spiral groove
420‧‧‧第二端部 420‧‧‧ second end
430‧‧‧第一端部 430‧‧‧ first end
440‧‧‧螺距 440‧‧‧pitch
500‧‧‧流體分配元件組件 500‧‧‧Fluid distribution component assembly
510‧‧‧螺旋式凹槽 510‧‧‧Spiral groove
520‧‧‧終端 520‧‧‧ Terminal
530‧‧‧開始端 530‧‧‧Starting end
600‧‧‧流體分配元件組件 600‧‧‧Fluid distribution component assembly
610‧‧‧凹槽 610‧‧‧ Groove
640‧‧‧部份 640‧‧‧Parts
700‧‧‧流體分配元件 700‧‧‧Fluid distribution components
710‧‧‧凹槽 710‧‧‧ Groove
740‧‧‧部份 740‧‧‧Parts
800‧‧‧流體分配元件 800‧‧‧Fluid distribution components
810‧‧‧凹槽 810‧‧‧ Groove
820‧‧‧端部 820‧‧‧End
830‧‧‧開始端 830‧‧‧Starting end
900‧‧‧流體分配元件 900‧‧‧Fluid distribution components
910‧‧‧片段 910‧‧‧frag
920‧‧‧終點 920‧‧‧ End
930‧‧‧點 930‧‧ points
1000‧‧‧流體分配元件組件 1000‧‧‧Fluid distribution component assembly
1010‧‧‧凹槽 1010‧‧‧ Groove
1101‧‧‧第一表面 1101‧‧‧ first surface
1102‧‧‧流體分配元件 1102‧‧‧ Fluid distribution components
1103‧‧‧流體分配元件 1103‧‧‧ Fluid distribution components
1104‧‧‧流體分配元件 1104‧‧‧ Fluid distribution components
1105‧‧‧流體分配元件 1105‧‧‧ Fluid distribution components
1110‧‧‧側壁 1110‧‧‧ side wall
1111‧‧‧第一表面 1111‧‧‧ first surface
1120‧‧‧側壁 1120‧‧‧ side wall
1121‧‧‧突出部份 1121‧‧‧ highlight
1122‧‧‧第一表面 1122‧‧‧ first surface
1140‧‧‧第二表面 1140‧‧‧ second surface
1141‧‧‧第一表面 1141‧‧‧ first surface
1150‧‧‧表面 1150‧‧‧ surface
1151‧‧‧表面 1151‧‧‧ surface
1400‧‧‧流體分配元件 1400‧‧‧ Fluid distribution components
1410‧‧‧單一螺旋式凹槽 1410‧‧‧Single spiral groove
1420‧‧‧路徑 1420‧‧‧ Path
1700‧‧‧方法 1700‧‧‧ method
所附圖面係意欲描述本發明之示範具體實施例，且不應被解釋為限制其範圍。所附圖面不被考慮為按照一定之比例描畫，除非明確地指出。現在參考該等圖示，其中類似元件採用相同之編號：圖1係示範的電漿處理設備之截面視圖；圖2係傳統的流體分配元件之視圖；圖3描述示範的流體分配元件上之各區域；圖4描述按照一具體實施例的流體分配元件組件；圖5描述按照一具體實施例的流體分配元件組件；圖6描述按照一具體實施例的流體分配元件組件；圖7描述按照一具體實施例的流體分配元件組件；圖8描述按照一具體實施例的流體分配元件組件；圖9描述按照一具體實施例的流體分配元件組件；圖10描述按照一具體實施例的流體分配元件組件；圖11A描述按照一示範具體實施例的流體分配元件之側視圖；圖11B描述按照一示範具體實施例的流體分配元件之截面視圖；圖11C描述按照一示範具體實施例的流體分配元件之截面視圖；圖11D描述按照一示範具體實施例的流體分配元件之截面視圖；圖11E描述按照一示範具體實施例的流體分配元件之 截面視圖；圖12描述按照一具體實施例的流體分配元件組件；圖13描述圖2之流體分配元件組件的溫度分佈線圖；圖14描述按照一具體實施例的流體分配元件組件；圖15描述圖14之流體分配元件組件的溫度分佈線圖；圖16描述按照一具體實施例的流體分配元件組件；及圖17描述一用於工件的電漿處理之方法。 The drawings are intended to describe exemplary embodiments of the invention and are not to be construed as limiting. The drawings are not considered to be drawn to scale, unless explicitly indicated. Reference is now made to the accompanying drawings, in which like reference numerals are used in the drawings of FIG. Figure 4 depicts a fluid dispensing element assembly in accordance with an embodiment; Figure 5 depicts a fluid dispensing element assembly in accordance with an embodiment; Figure 6 depicts a fluid dispensing element assembly in accordance with an embodiment; Fluid dispensing element assembly of an embodiment; FIG. 8 depicts a fluid dispensing element assembly in accordance with an embodiment; FIG. 9 depicts a fluid dispensing element assembly in accordance with an embodiment; FIG. 10 depicts a fluid dispensing element assembly in accordance with an embodiment; Figure 11A depicts a side view of a fluid dispensing member in accordance with an exemplary embodiment; Figure 11B depicts a cross-sectional view of a fluid dispensing member in accordance with an exemplary embodiment; Figure 11C depicts a cross-sectional view of a fluid dispensing member in accordance with an exemplary embodiment. Figure 11D depicts a cross-sectional view of a fluid dispensing element in accordance with an exemplary embodiment; Figure 11E Specific embodiments of said fluid according to an exemplary embodiment of the dispensing device FIG. 12 depicts a fluid distribution element assembly in accordance with an embodiment; FIG. 13 depicts a temperature distribution line diagram of the fluid distribution element assembly of FIG. 2; FIG. 14 depicts a fluid distribution element assembly in accordance with an embodiment; Figure 14 depicts a temperature distribution line diagram of a fluid dispensing element assembly; Figure 16 depicts a fluid dispensing element assembly in accordance with an embodiment; and Figure 17 depicts a method for plasma processing of a workpiece.
410‧‧‧螺旋式凹槽 410‧‧‧Spiral groove
420‧‧‧第二端部 420‧‧‧ second end
430‧‧‧第一端部 430‧‧‧ first end
500‧‧‧流體分配元件組件 500‧‧‧Fluid distribution component assembly
510‧‧‧螺旋式凹槽 510‧‧‧Spiral groove
520‧‧‧終端 520‧‧‧ Terminal
530‧‧‧開始端 530‧‧‧Starting end
Claims (22)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101109819A TWI596644B (en) | 2012-03-22 | 2012-03-22 | Fluid distribution member assembly for plasma processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101109819A TWI596644B (en) | 2012-03-22 | 2012-03-22 | Fluid distribution member assembly for plasma processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201340163A TW201340163A (en) | 2013-10-01 |
| TWI596644B true TWI596644B (en) | 2017-08-21 |
Family
ID=49771019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101109819A TWI596644B (en) | 2012-03-22 | 2012-03-22 | Fluid distribution member assembly for plasma processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI596644B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013008A (en) * | 2019-12-19 | 2021-06-22 | 中微半导体设备(上海)股份有限公司 | Inductive coupling type plasma processing equipment and cover body and dielectric window temperature control method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179363A (en) * | 1991-03-14 | 1993-01-12 | Hughes Aircraft Company | Stress relieved iris in a resonant cavity structure |
| US6264852B1 (en) * | 1996-04-25 | 2001-07-24 | Applied Materials, Inc. | Substrate process chamber and processing method |
| US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
| US6682630B1 (en) * | 1999-09-29 | 2004-01-27 | European Community (Ec) | Uniform gas distribution in large area plasma source |
| US20050241767A1 (en) * | 2004-04-30 | 2005-11-03 | Ferris David S | Multi-piece baffle plate assembly for a plasma processing system |
| TW201024455A (en) * | 2008-10-24 | 2010-07-01 | Applied Materials Inc | Electrode and power coupling scheme for uniform process in a large-area PECVD chamber |
| TW201145350A (en) * | 2010-05-14 | 2011-12-16 | Applied Materials Inc | Inductive plasma source with metallic shower head using b-field concentrator |
-
2012
- 2012-03-22 TW TW101109819A patent/TWI596644B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179363A (en) * | 1991-03-14 | 1993-01-12 | Hughes Aircraft Company | Stress relieved iris in a resonant cavity structure |
| US6264852B1 (en) * | 1996-04-25 | 2001-07-24 | Applied Materials, Inc. | Substrate process chamber and processing method |
| US6682630B1 (en) * | 1999-09-29 | 2004-01-27 | European Community (Ec) | Uniform gas distribution in large area plasma source |
| US6444040B1 (en) * | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
| US20050241767A1 (en) * | 2004-04-30 | 2005-11-03 | Ferris David S | Multi-piece baffle plate assembly for a plasma processing system |
| TW201024455A (en) * | 2008-10-24 | 2010-07-01 | Applied Materials Inc | Electrode and power coupling scheme for uniform process in a large-area PECVD chamber |
| TW201145350A (en) * | 2010-05-14 | 2011-12-16 | Applied Materials Inc | Inductive plasma source with metallic shower head using b-field concentrator |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201340163A (en) | 2013-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9129778B2 (en) | Fluid distribution members and/or assemblies | |
| KR102383357B1 (en) | Mounting table and substrate processing apparatus | |
| JP5051581B2 (en) | Multi-piece buffer plate assembly for plasma processing systems | |
| TWI338931B (en) | Substrate support having dynamic temperature control | |
| JP6878616B2 (en) | Bottom and middle edge ring | |
| TW563200B (en) | Low contamination plasma chamber components and methods for making the same | |
| JP6100564B2 (en) | Substrate processing apparatus and mounting table | |
| US8100082B2 (en) | Method and system for introducing process fluid through a chamber component | |
| JP5635001B2 (en) | Thermal contact between electrostatic chuck and hot edge ring adjustable by clocking the coupling ring | |
| TW201718928A (en) | Susceptor and substrate processing apparatus | |
| JP4869610B2 (en) | Substrate holding member and substrate processing apparatus | |
| JP6916303B2 (en) | Movable edge ring design | |
| TWI640728B (en) | Air cooled faraday shield and methods for using the same | |
| JPH10149899A (en) | Inductively-coupled parallel flat plasma reactor with conical dome | |
| TW201631654A (en) | Gas injection method for uniformly processing a semiconductor substrate in a semiconductor substrate processing apparatus | |
| TW202228205A (en) | Tapered upper electrode for uniformity control in plasma processing | |
| WO2010146961A1 (en) | Plasma processing device and cooling device for plasma processing devices | |
| JP7387794B2 (en) | Dogbone inlet cone profile for remote plasma oxidation chamber | |
| KR101744847B1 (en) | Plasuma processing device | |
| TWI596644B (en) | Fluid distribution member assembly for plasma processing apparatus | |
| JP2011040528A (en) | Plasma processing apparatus | |
| TWI746999B (en) | Plasma generation system and temperature regulating method | |
| JP2010225642A (en) | Temperature control device, temperature control method, and substrate processing apparatus | |
| JP2010010154A (en) | Method and system for introducing process fluid through chamber component | |
| US20220367153A1 (en) | Temperature-controlled plasma generation system |