TWI595020B - 用於電子應用之二噻吩并苯并呋喃聚合物及小分子 - Google Patents
用於電子應用之二噻吩并苯并呋喃聚合物及小分子 Download PDFInfo
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- TWI595020B TWI595020B TW102126349A TW102126349A TWI595020B TW I595020 B TWI595020 B TW I595020B TW 102126349 A TW102126349 A TW 102126349A TW 102126349 A TW102126349 A TW 102126349A TW I595020 B TWI595020 B TW I595020B
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- Prior art keywords
- alkyl
- group
- independently
- substituted
- alkoxy
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- 229920000642 polymer Polymers 0.000 title claims description 107
- 150000003384 small molecules Chemical class 0.000 title description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 236
- 229910052739 hydrogen Inorganic materials 0.000 claims description 101
- 125000003118 aryl group Chemical group 0.000 claims description 95
- 125000003545 alkoxy group Chemical group 0.000 claims description 79
- 239000001257 hydrogen Substances 0.000 claims description 77
- 150000001875 compounds Chemical class 0.000 claims description 56
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 44
- 125000001072 heteroaryl group Chemical group 0.000 claims description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 42
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- 229910052736 halogen Inorganic materials 0.000 claims description 38
- 150000002367 halogens Chemical class 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 37
- 150000002431 hydrogen Chemical class 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 32
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 28
- 239000002904 solvent Substances 0.000 claims description 27
- 125000004434 sulfur atom Chemical group 0.000 claims description 25
- 125000003342 alkenyl group Chemical group 0.000 claims description 23
- 229910052799 carbon Inorganic materials 0.000 claims description 21
- 125000004432 carbon atom Chemical group C* 0.000 claims description 20
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 16
- 125000000304 alkynyl group Chemical group 0.000 claims description 15
- 229910052717 sulfur Inorganic materials 0.000 claims description 15
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 238000013086 organic photovoltaic Methods 0.000 claims description 14
- 229910052727 yttrium Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 12
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 claims description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 11
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 8
- 125000005843 halogen group Chemical group 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000011593 sulfur Substances 0.000 claims description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 125000004209 (C1-C8) alkyl group Chemical group 0.000 claims description 3
- 125000006731 (C1-C8) thioalkoxy group Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 125000005309 thioalkoxy group Chemical group 0.000 claims description 3
- 125000000041 C6-C10 aryl group Chemical group 0.000 claims description 2
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 claims description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 2
- 229930192474 thiophene Natural products 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 210000004508 polar body Anatomy 0.000 claims 1
- -1 alkyl C 6 Chemical compound 0.000 description 98
- 239000010410 layer Substances 0.000 description 80
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 60
- GBXQPDCOMJJCMJ-UHFFFAOYSA-M trimethyl-[6-(trimethylazaniumyl)hexyl]azanium;bromide Chemical compound [Br-].C[N+](C)(C)CCCCCC[N+](C)(C)C GBXQPDCOMJJCMJ-UHFFFAOYSA-M 0.000 description 50
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 48
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 42
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 31
- 239000000203 mixture Substances 0.000 description 30
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 30
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical class [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 29
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 27
- 229910003472 fullerene Inorganic materials 0.000 description 25
- 239000000243 solution Substances 0.000 description 25
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 21
- 239000004793 Polystyrene Substances 0.000 description 20
- 239000002585 base Substances 0.000 description 19
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 18
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 18
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 17
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 229920002223 polystyrene Polymers 0.000 description 17
- 239000000047 product Substances 0.000 description 16
- 239000012212 insulator Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000002253 acid Substances 0.000 description 14
- 239000007787 solid Substances 0.000 description 14
- 229920001577 copolymer Polymers 0.000 description 13
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 12
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 12
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 12
- 125000001931 aliphatic group Chemical group 0.000 description 12
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 12
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 11
- 125000001424 substituent group Chemical group 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- 125000005842 heteroatom Chemical group 0.000 description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 10
- 239000011541 reaction mixture Substances 0.000 description 10
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 10
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 9
- 238000006116 polymerization reaction Methods 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 238000005227 gel permeation chromatography Methods 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 8
- 239000012074 organic phase Substances 0.000 description 8
- LXNAVEXFUKBNMK-UHFFFAOYSA-N palladium(II) acetate Substances [Pd].CC(O)=O.CC(O)=O LXNAVEXFUKBNMK-UHFFFAOYSA-N 0.000 description 8
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 8
- 238000010992 reflux Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 238000005266 casting Methods 0.000 description 7
- 238000007641 inkjet printing Methods 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 6
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 6
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 6
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- 239000004743 Polypropylene Substances 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 6
- 150000002148 esters Chemical class 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 229920001903 high density polyethylene Polymers 0.000 description 6
- 239000004700 high-density polyethylene Substances 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 229920001155 polypropylene Polymers 0.000 description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 6
- 239000008096 xylene Substances 0.000 description 6
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 101150003085 Pdcl gene Proteins 0.000 description 5
- 238000006069 Suzuki reaction reaction Methods 0.000 description 5
- 229910001508 alkali metal halide Inorganic materials 0.000 description 5
- 150000008045 alkali metal halides Chemical class 0.000 description 5
- 125000004414 alkyl thio group Chemical group 0.000 description 5
- 150000001491 aromatic compounds Chemical class 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 4
- 238000000944 Soxhlet extraction Methods 0.000 description 4
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 4
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 4
- 238000004440 column chromatography Methods 0.000 description 4
- 239000000306 component Substances 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PQVSTLUFSYVLTO-UHFFFAOYSA-N ethyl n-ethoxycarbonylcarbamate Chemical compound CCOC(=O)NC(=O)OCC PQVSTLUFSYVLTO-UHFFFAOYSA-N 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 239000010954 inorganic particle Substances 0.000 description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- GLXDVVHUTZTUQK-UHFFFAOYSA-M lithium hydroxide monohydrate Substances [Li+].O.[OH-] GLXDVVHUTZTUQK-UHFFFAOYSA-M 0.000 description 4
- 229940040692 lithium hydroxide monohydrate Drugs 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- PBKONEOXTCPAFI-UHFFFAOYSA-N 1,2,4-trichlorobenzene Chemical compound ClC1=CC=C(Cl)C(Cl)=C1 PBKONEOXTCPAFI-UHFFFAOYSA-N 0.000 description 3
- MNALLGNMYJQSHP-UHFFFAOYSA-N 1,4-bis(5-bromothiophen-2-yl)-2,5-bis(2-hexyldecyl)pyrrolo[3,4-c]pyrrole-3,6-dione Chemical compound CCCCCCCCC(CCCCCC)CN1C(=O)C2=C(C=3SC(Br)=CC=3)N(CC(CCCCCC)CCCCCCCC)C(=O)C2=C1C1=CC=C(Br)S1 MNALLGNMYJQSHP-UHFFFAOYSA-N 0.000 description 3
- CXBDYQVECUFKRK-UHFFFAOYSA-N 1-methoxybutane Chemical compound CCCCOC CXBDYQVECUFKRK-UHFFFAOYSA-N 0.000 description 3
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 3
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GEFFTNUQFMRYMP-UHFFFAOYSA-N C(CCC)C(CN1C(C2=CNC(C2=C1)=O)=O)CCCCCC Chemical compound C(CCC)C(CN1C(C2=CNC(C2=C1)=O)=O)CCCCCC GEFFTNUQFMRYMP-UHFFFAOYSA-N 0.000 description 3
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012043 crude product Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- DVVDGSKDQGMLPW-UHFFFAOYSA-N ditert-butyl-(1-phenylpyrrol-2-yl)phosphane Chemical compound CC(C)(C)P(C(C)(C)C)C1=CC=CN1C1=CC=CC=C1 DVVDGSKDQGMLPW-UHFFFAOYSA-N 0.000 description 3
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 3
- 229920001519 homopolymer Polymers 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 3
- 235000019341 magnesium sulphate Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 150000007530 organic bases Chemical class 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 3
- 150000003003 phosphines Chemical class 0.000 description 3
- 150000004714 phosphonium salts Chemical class 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 235000011181 potassium carbonates Nutrition 0.000 description 3
- 229910000160 potassium phosphate Inorganic materials 0.000 description 3
- 235000011009 potassium phosphates Nutrition 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 229920006126 semicrystalline polymer Polymers 0.000 description 3
- 235000017557 sodium bicarbonate Nutrition 0.000 description 3
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- VNFWTIYUKDMAOP-UHFFFAOYSA-N sphos Chemical compound COC1=CC=CC(OC)=C1C1=CC=CC=C1P(C1CCCCC1)C1CCCCC1 VNFWTIYUKDMAOP-UHFFFAOYSA-N 0.000 description 3
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- FYNROBRQIVCIQF-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione Chemical compound C1=CN=C2C(=O)C(=O)N=C21 FYNROBRQIVCIQF-UHFFFAOYSA-N 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
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- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
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- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
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- KSAVQLQVUXSOCR-UHFFFAOYSA-M sodium lauroyl sarcosinate Chemical compound [Na+].CCCCCCCCCCCC(=O)N(C)CC([O-])=O KSAVQLQVUXSOCR-UHFFFAOYSA-M 0.000 description 1
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- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
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- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- BEQGRRJLJLVQAQ-UHFFFAOYSA-N trans-3-methyl-2-pentene Natural products CCC(C)=CC BEQGRRJLJLVQAQ-UHFFFAOYSA-N 0.000 description 1
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/12—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
- C07D495/14—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D519/00—Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
- C07F5/04—Esters of boric acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/125—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one oxygen atom in the ring
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B57/00—Other synthetic dyes of known constitution
- C09B57/004—Diketopyrrolopyrrole dyes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B69/00—Dyes not provided for by a single group of this subclass
- C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
- C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
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- H—ELECTRICITY
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Description
本發明係關於包含式(I)之重複單元之聚合物及式(VIII)或(IX)之化合物,其中Y、Y15、Y16及Y17彼此獨立地為式(I)之基團,及其在有機電子裝置中,尤其在有機光伏打裝置(太陽能電池)及光電二極體中,或在含有二極體及/或有機場效應電晶體之裝置中作為有機半導體之用途。該等本發明之聚合物及化合物可具有極佳的在有機溶劑中之溶解性及極佳的成膜特性。另外,當該等本發明之聚合物及化合物用於有機場效應電晶體、有機光伏打裝置(太陽能電池能)及光電二極體中時,可觀測到高能量轉化效率、極佳場效應遷移率、良好接通/斷開電流比率及/或極佳穩定性。
WO2010136401係關於下式之多環二噻吩,其中R1及R1'彼此獨立地為H或取代基、鹵素或SiR6R4R5;R2及R2'可相同或不同且選自C1-C25烷基、C3-C12環烷基、C2-C25烯基、C2-C25炔基、C4-C25芳基、C5-C25烷基芳基或C5-C25芳烷基,其各自未經取代或經取代,且若X之定義內之R3與R3'一起完成環結構,
或X為與式、或中之一者相配之橋接基團,則R2及/或R2'亦可為鹵素或氫;
X為選自、及之二價鍵聯基團;Y及Y'係獨立地選自
n及p獨立地在0至6之範圍內;R3及R3'獨立地為氫或取代基,或為胺基,或與其所連接之碳原子一起完成5或6員未經取代或經取代之烴環,或包含至少一個選自N、O或S之雜原子的5員未經取代或經取代之雜環,以及包含至少2個下式之結構單元之寡聚物、聚合物或共聚物:
將WO2010136401中所述之物質用於有機場效應電晶體、有機光伏打裝置(太陽能電池)及光電二極體中。
WO2011002927係關於一種包含至少一個供體受體共聚物之(共聚物)組合物,該至少一個共聚物包含至少一個由式表示之第一聯噻吩重複單元(供體),其中R1、R2及R'為增溶基或氫。根據WO2011002927之技術方案8,R1及R2可形成雜環。
另外,包含聯噻吩重複單元之聚合物描述於EP2006291A1、US20110006287及WO2011025454中。
PCT/EP2013/056463係關於包含含有至少一個式(I)及(II)之(重複)單元的聚合物或小分子之有機電子裝置
Schroeder B.C.等人,Chem.Mater.,23(2011)4025-4031描述包含式M1及M2之單體單元之聚合物在有機場效應電晶體中之用途:
James R.Durrant等人,J.Phys.Chem.Lett.2012,3,140-144報導在具有包含較小能帶隙聚合物(BTT-DPP)及PC70BM之摻合膜之活性層的OPV裝置中,光誘導之電洞轉移對裝置光電流之貢獻。
本發明之一個目的為提供在用於有機場效應電晶體、有機光伏打裝置(太陽能電池能)及光電二極體中時顯示高能量轉化效率、極佳
場效應遷移率、良好接通/斷開電流比率及/或極佳穩定性之聚合物。
該目的已藉由包含下式之重複單元之聚合物實現:,其中R1及R2彼此獨立地為H、F、C1-C18烷基、經E'取代及/或雜有D'之C1-C18烷基、C6-C24芳基、經G'取代之C6-C24芳基、C2-C20雜芳基、經G'取代之C2-C20雜芳基或
R1與R2一起形成基團、或,其中R205、R206、R206'、R207、R208、R208'、R209及R210彼此獨立地為H、C1-C18烷基、經E'取代及/或雜有D'之C1-C18烷基、C1-C18烷氧基或經E'取代及/或雜有D'之C1-C18烷氧基、C1-C18氟烷基、C6-C24芳基、經G'取代之C6-C24芳基、C2-C20雜芳基、經G'取代之C2-C20雜芳基、C2-C18烯基、C2-C18炔基、C7-C25芳烷基、經G'取代之C7-C25芳烷基;CN或-CO-R28,R601及R602彼此獨立地為H、鹵素、C1-C25烷基、C3-C12環烷基、C2-C25烯基、C2-C25炔基、C6-C24芳基、經G'取代之C6-C24芳基、C7-C25芳烷基或經G'取代之C7-C25芳烷基;D'為-CO-、-COO-、-S-、-SO-、-SO2-、-O-、-NR65-、-SiR70R71-、-POR72-、-CR63=CR64-或-C≡C-,及E'為-OR69、-SR69、-NR65R66、-COR68、-COOR67、-CONR65R66、-CN、CF3或鹵素,G'為E'、C1-C18烷基或雜有-O-之C1-C18烷基,
R28為H;C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基,R63及R64彼此獨立地為C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基;R65及R66彼此獨立地為C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基;或R65與R66一起形成五或六員環,R67為C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基,R68為H;C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基,R69為C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基,R70及R71彼此獨立地為C1-C18烷基、C6-C18芳基或經C1-C18烷基取代之C6-C18芳基,及R72為C1-C18烷基、C6-C18芳基或經C1-C18烷基取代之C6-C18芳基。
本發明聚合物或包含本發明聚合物之有機半導體材料、層或組分宜用於有機發光二極體(PLED,OLED)、有機光伏打裝置(太陽能電池)及光電二極體中,或用於有機場效應電晶體(OFET)中。
本發明聚合物之重量平均分子量較佳為4,000道爾頓或4,000道爾頓以上,尤其為4,000至2,000,000道爾頓,更佳為10,000至1,000,000,且最佳為10,000至100,000道爾頓。分子量根據使用聚苯乙烯標準物之高溫凝膠滲透層析(HT-GPC)來測定。本發明聚合物之多分散性較佳為1.01至10,更佳為1.1至3.0,最佳為1.5至2.5。本發明聚合物較佳為共軛的。
本發明寡聚物之重量平均分子量較佳低於4,000道爾頓。
在一個較佳實施例中,R1與R2一起形成基團。R205、R206、R207及R208較佳為H。
在另一個較佳實施例中,R1及R2為式或之基團,其中R400、R401、R402及R403彼此獨立地為H、CN、F、CF3、C1-C18烷氧基;C1-C18烷基;或雜有-O-之C1-C18烷基。R400、R401、R402及R403較佳為H。
R1及R2可不同,但較佳相同。
在一個較佳實施例中,本發明係針對包含式之重複單元之聚合物,其中R1及R2彼此獨立地為式、或之基團,其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基;C1-C18烷基;或雜有-O-之C1-C18烷基,或R1與R2一起形成基
團。R601及R602可相同或不同且係選自C1-C25烷基或氫;尤其
氫。R1及R2尤其為式之基團,極尤其為。
在式I之重複單元中,式之重複單元較佳。
聚合物可為式之均聚物,其中A為式(I)之重複單元,n通常在4至1000,尤其4至200,極尤其5至150之範圍內。
或者,聚合物可為包含式及,尤其之重複單元之聚合物,極尤其式之共聚物,其中n通常在4至1000,尤其4至200,極尤其5至150之範圍內。
A為式(I)之重複單元,及-COM1-為重複單元,其中k為0、1、2或3;l為1、2或3;r為0、1、2或3;z為0、1、2或3;Ar4、Ar5、Ar6及Ar7彼此獨立地為下式之基團:
;,諸如
及;或,諸如,其中X1為-O-、-S-、-NR8-、-Si(R11)(R11')-、-Ge(R11)(R11')-、-
C(R7)(R7')-、-C(=O)-、-C(=CR104R104')-、、、
;,諸如
、及
;,諸如
、及
,其中X1'為S、O、NR107-、-Si(R117)(R117')-、-Ge(R117)(R117')-、-C(R106)(R109)-、-C(=O)-、-C(=CR104R104')-、、、
R3及R3'彼此獨立地為氫、鹵素、鹵化C1-C25烷基、氰基、可視情況雜有一或多個氧或硫原子之C1-C25烷基;C7-C25芳基烷基或C1-C25烷氧基;R104及R104'彼此獨立地為氫、氰基、COOR103、C1-C25烷基、或C6-C24芳基、或C2-C20雜芳基,R4、R4'、R5、R5'、R6及R6'彼此獨立地為氫、鹵素、鹵化C1-C25烷基、氰基、可視情況雜有一或多個氧或硫原子之C1-C25烷基;C7-C25芳基烷基或C1-C25烷氧基;R7、R7'、R9及R9'彼此獨立地為氫、可視情況雜有一或多個氧或硫原子之C1-C25烷基;或C7-C25芳基烷基,R8及R8'彼此獨立地為氫、C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;或可視情況雜有一或多個氧或硫原子之C1-C25烷基;或C7-C25芳基烷基,R11及R11'彼此獨立地為C1-C25烷基、C7-C25芳基烷基或可視情況經C1-C8烷基及/或C1-C8烷氧基取代一至三次之苯基;R12及R12'彼此獨立地為氫、鹵素、氰基、可視情況雜有一或多個氧或硫原子之C1-C25烷基、C1-C25烷氧基、C7-C25芳基烷基或,其中R13為C1-C10烷基或三(C1-C8烷基)矽烷基;或R104及R104'彼此獨立地為氫、C1-C18烷基、可視情況經G取代之C6-C10芳基或可視情況經G取代之C2-C8雜芳基,R105、R105'、R106及R106'彼此獨立地為氫、鹵素、可視情況雜有一或多個氧或硫原子之C1-C25烷基、C7-C25芳基烷基或C1-C18烷氧基,R107為氫、C7-C25芳基烷基、C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18全氟烷基;可雜有-O-或-S-之C1-C25烷基;或-COOR103;R108及R109彼此獨立地為H、C1-C25烷基、經E取代及/或雜有D之
C1-C25烷基、C7-C25芳基烷基、C6-C24芳基、經G取代之C6-C24芳基、C2-C20雜芳基、經G取代之C2-C20雜芳基、C2-C18烯基、C2-C18炔基、C1-C18烷氧基、經E取代及/或雜有D之C1-C18烷氧基、或C7-C25芳烷基,或R108與R109一起形成式=CR110R111之基團,其中R110及R111彼此獨立地為H、C1-C18烷基、經E取代及/或雜有D之C1-C18烷基、C6-C24芳基、經G取代之C6-C24芳基、或C2-C20雜芳基、或經G取代之C2-C20雜芳基,或R108與R109一起形成五或六員環,其視情況可經以下取代:C1-C18烷基、經E取代及/或雜有D之C1-C18烷基、C6-C24芳基、經G取代之C6-C24芳基、C2-C20雜芳基、經G取代之C2-C20雜芳基、C2-C18烯基、C2-C18炔基、C1-C18烷氧基、經E取代及/或雜有D之C1-C18烷氧基、或C7-C25芳烷基,D為-CO-、-COO-、-S-、-O-或-NR112'-,E為C1-C8硫烷氧基、C1-C8烷氧基、CN、-NR112'R113'、-CONR112'R113'、或鹵素,G為E或C1-C18烷基,及R112'及R113'彼此獨立地為H;C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基,R115及R115'彼此獨立地為氫、鹵素、氰基、可視情況雜有一或多個氧或硫原子之C1-C25烷基、C1-C25烷氧基、C7-C25芳基烷基或,其中R116為C1-C10烷基或三(C1-C8烷基)矽烷基;R117及R117'彼此獨立地為C1-C25烷基、C7-C25芳基烷基或可視情況經C1-C8烷基及/或C1-C8烷氧基取代一至三次之苯基;R118、R119、R120及R121彼此獨立地為氫、鹵素、鹵化C1-C25烷基、氰基、可視情況雜有一或多個氧或硫原子之C1-C25烷基;C7-C25
芳基烷基或C1-C25烷氧基;R122及R122'彼此獨立地為氫、C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;或可視情況雜有一或多個氧或硫原子之C1-C25烷基;或C7-C25芳基烷基。
R201係選自氫、C1-C100烷基、-COOR103、經一或多個鹵素原子、羥基、硝基、-CN或C6-C18芳基取代及/或雜有-O-、-COO-、-OCO-或-S-之C1-C100烷基;C7-C25芳基烷基、胺甲醯基、可視情況經C1-C100烷基及/或C1-C100烷氧基取代一至三次之C5-C12環烷基、C6-C24芳基,尤其可視情況經C1-C100烷基、C1-C100硫烷氧基及/或C1-C100烷氧基取代一至三次之苯基或1-萘基或2-萘基;及五氟苯基;R103及R114彼此獨立地為可視情況雜有一或多個氧或硫原子之C1-C25烷基,R202及R203可相同或不同且係選自H、F、-CN、可視情況雜有一或多個氧或硫原子之C1-C100烷基;及C1-C100烷氧基。
以上所提及之重複單元COM1係已知的且可根據已知程序來製備。關於DPP重複單元及其合成,參考例如US6451459B1、WO05/049695、WO2008/000664、EP2034537A2、EP2075274A1、WO2010/049321、WO2010/049323、WO2010/108873、WO2010/115767、WO2010/136353、WO2010/136352及PCT/EP2011/057878。
R3、R3'、R4及R4'較佳為氫或C1-C25烷基。
R201較佳為直鏈或分支鏈C1-C36烷基,諸如甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、2-戊基、3-戊基、2,2-二甲基丙基、1,1,3,3-四甲基戊基、正己基、1-甲基己基、1,1,3,3,5,5-六甲基己基、正庚基、異庚基、1,1,3,3-四甲基丁基、1-甲基庚基、3-甲基庚基、正辛基、1,1,3,3-四甲基丁基及2-乙基
己基、正壬基、癸基、十一烷基,尤其正十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、2-乙基-己基、2-丁基-己基、2-丁基-辛基、2-己基癸基、2-癸基-十四烷基、十七烷基、十八烷基、二十烷基、二十一烷基、二十二烷基或二十四烷基。
基團R201宜可由式表示,其中m1=n1+2且m1+n124。對掌性側鏈可為均勻對掌性或外消旋的,其可影響化合物之形態。
-COM1-較佳為下式之重複單元:
其中R3、R3'、R4及R4'彼此獨立地為氫或C1-C25烷基;R8及R8'彼此獨立地為氫或C1-G25烷基;R114為C1-C38烷基;R201為C1-C38烷基;及R202及R203'彼此獨立地為氫或C1-C25烷基。
在一個尤其較佳實施例中,COM1係選自式(XVb)、(XVb')、(XVe)、(XVh)、(XVh')、(XVu')、(XVu")及(XVu'''),尤其(XVb)、(XVb')、(XVu')、(XVu")及(XVu''')之重複單元。
在本發明之一個較佳實施例中,聚合物為包含式之重複單元之共聚物,尤其式之共聚物,其中A及COM1係如上文所定義;n為致使分子量為4,000至2,000,000道爾頓,更佳10,000至1,000,000且最佳10,000至100,000道爾頓之數字。n通常在4至1000,尤其4至200,
極尤其5至150之範圍內。由式III表示之聚合物結構為例如經由鈴木聚合反應程序(Suzuki polymerization procedure)所獲得之聚合物產物之理想化表述。式之重複單元可以兩種方式併入聚合物鏈中:及。兩種可能性皆應由式(III)涵蓋。
本發明之聚合物可包含2種以上不同重複單元,諸如重複單元A、COM1及B,其彼此同於。
在該具體實例中,聚合物為包含式之重複單元之共聚物,其中x=0.995至0.005,y=0.005至0.995,尤其x=0.2至0.8,y=0.8至0.2,且x+y=1。B具有COM1之含義,其限制條件為B與COM1不同。A及COM1係如上文所定義。
在本發明之另一個較佳實施例中,A為式(I),尤其(Ia)之重複單元,如上文所定義,且為下式之基團:、
其中R3、R3'、R4及R4'彼此獨立地為氫或C1-C25烷基;R8及R8'彼此獨立地為氫或C1-C25烷基;及R201為C1-C38烷基。
COM1較佳為式(XVb')、(XVb')、(XVu')及(XVu")之重複單元。
在式(I)之重複單元中,具有如下特徵之式(I)之重複單元較佳,
其中R1及R2彼此獨立地為式、、或之基團,其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基;C1-C18烷基;或雜有-O-之C1-C18烷基,或R1與R2一起形成基團。R1
及R2尤其為式之基團,極尤其為式之基團。R1及R2可不同,但較佳相同。R601及R602可不同,但較佳相同且係選自氫或C1-C25烷基,尤其氫。最佳為式(Ia)之重複單元。
在式III之共聚物中,以下共聚物較佳:
及,其中n為4至1000,尤其4至200,極尤其5至150;R3、R3'、R4及R4'彼此獨立地為氫或C1-C25烷基;R201為C1-C38烷基,及R601及R602彼此獨立地為氫或C1-C25烷基;尤其氫。式(Ia1)、(Ia2)、(Ia6)及(Ia7)之聚合物更佳。
尤其較佳聚合物之實例如下所示:
式III之共聚物可例如藉由鈴木反應獲得。芳族酸鹽與鹵化物(尤其為溴化物)之縮合反應(通常稱為「鈴木反應」)容許存在如N.Miyaura及A.Suzuki在Chemical Reviews,第95卷,第457-2483頁(1995)中所報導之各種有機官能基。較佳催化劑為2-二環己基膦基-2',6'-二-烷氧基聯苯/乙酸鈀(II)、三烷基-鏻鹽/鈀(0)衍生物及三烷基膦/鈀(0)衍生物。尤其較佳催化劑為2-二環己基膦基-2',6'-二-甲氧基聯苯(sPhos)/乙酸鈀(II)及四氟硼酸三第三丁基鏻((t-Bu)3P*HBF4)/參(二亞苄基丙酮)二鈀(0)(Pd2(dba)3)及三第三丁基膦(t-Bu)3P/參(二亞苄基丙酮)二鈀(0)(Pd2(dba)3)。該反應可應用於製備高分子量聚合物及共
聚物。
為製備對應於式III之聚合物,在Pd及三苯基膦之催化作用下,使式X10-A-X10之二鹵化物與(等莫耳)量之式之二酸或二酸鹽反應;或使式之二鹵化物與(等莫耳)量之對應於式X11-A-X11之二酸或二酸鹽反應,其中X10為鹵素,尤其Br,
且X11在每次出現時獨立地為-B(OH)2、-B(OY1)2、或,其中Y1在每次出現時獨立地為C1-C10烷基且Y2在每次出現時獨立地為C2-C10伸烷基,諸如-CY3Y4-CY5Y6-或-CY7Y8-CY9Y10-CY11Y12-,其中Y3、Y4、Y5、Y6、Y7、Y8、Y9、Y10、Y11及Y12彼此獨立地為氫或C1-C10烷基,尤其-C(CH3)2C(CH3)2-、-CH2C(CH3)2CH2-或-C(CH3)2CH2C(CH3)2-,且Y13及Y14彼此獨立地為氫或C1-C10烷基。反應通常在約0℃至180℃下在諸如甲苯、二甲苯之芳族烴溶劑中進行。亦可單獨或與芳族烴混合使用其他溶劑,諸如二甲基甲醯胺、二噁烷、二甲氧基乙烷及四氫呋喃。使用水性鹼,較佳碳酸鈉或碳酸氫鈉、磷酸鉀、碳酸鉀或碳酸氫鉀作為酸、酸鹽之活化劑且作為HBr清除劑。聚合反應可耗時0.2至100小時。諸如氫氧化四烷基銨之有機鹼及諸如TBAB之相轉移催化劑可促進硼之活性(參見例如Leadbeater & Marco;Angew.Chem.Int.Ed.Eng,42(2003)1407及其中所引用之參考文獻)。反應條件之其他變化藉由T.I.Wallow及B.M.Novak在J.Org.Chem.59(1994)5034-5037中;及M.Remmers、M.Schulze及G.Wegner在Macromol.Rapid Commun.17(1996)239-252中給出。可能藉由使用過量二溴化物、二酸或二酸鹽或鏈終止劑來控制分子量。
根據WO2010/136352中所述之方法,聚合係在存在以下之情況下進行:a)包含鈀催化劑及有機膦或鏻化合物之催化劑/配位體系統,b)鹼,c)溶劑或溶劑之混合物,其特徵在於有機膦為經三取代之式之膦,
或其鏻鹽,其中X"與Y"獨立地表示氮原子或C-R2"基團,且Y"與X"獨立地表示氮原子或C-R9"基團,兩個R1"基團中之每一R1"彼此獨立地表示選自群組C1-C24烷基、C3-C20環烷基(其尤其包括單環以及雙及三環環烷基)、C5-C14芳基(其尤其包括苯基、萘基、茀基),C2-C13雜芳基(其中選自群組N、O、S之雜原子數可為1至2)之基團,其中兩個基團R1"亦可彼此連接,且其中以上所提及之基團R1"本身各自可彼此獨立地經選自以下群組之取代基單取代或多取代:氫、C1-C20烷基、C2-C20烯基、C3-C8環烷基、C2-C9雜烷基、C5-C10芳基、C2-C9雜芳基(其中選自群組N、O、S之雜原子數可為1至4)、C1-C20烷氧基、C1-C10鹵烷基、羥基、形式NH-(C1-C20烷基)、NH-(C5-C10芳基)、N(C1-C20烷基)2、N(C1-C20烷基)(C5-C10芳基)、N(C5-C10芳基)2、N(C1-C20烷基/C5-C10芳基3)3 +、NH-CO-C1-C20烷基、NH-CO-C5-C10芳基之胺基、形式COOH及COOQ(其中Q表示一價陽離子或C1-C8烷基)之羧根基、C1-C6-醯氧基、亞磺酸根基、形式SO3H及SO3Q'(其中Q'表示一價陽離子、C1-C20烷基或C5-C10芳基)之磺酸根基、三-C1-C6烷基矽烷基,其中兩個所提及之取代基亦
可彼此橋連,R2"-R9"表示氫、烷基、烯基、環烷基、芳族或雜芳族芳基、O-烷基、NH-芳基、N-(烷基)2、O-(芳基)、NH-(芳基)、N-(烷基)(芳基)、O-CO-烷基、O-CO-芳基、F、Si(烷基)3、CF3、CN、CO2H、COH、SO3H、CONH2、CONH(烷基)、CON(烷基)2、SO2(烷基)、SO(烷基)、SO(芳基)、SO2(芳基)、SO3(烷基)、SO3(芳基)、S-烷基、S-芳基、NH-CO(烷基)、CO2(烷基)、CONH2、CO(烷基)、NHCOH、NHCO2(烷基)、CO(芳基)、CO2(芳基),其中兩個或兩個以上各自彼此獨立之相鄰基團亦可彼此連接,以便存在縮合環系統,且其中在R2"至R9"中,烷基表示在各情況下可為直鏈或分支鏈之具有1至20個碳原子之烴基,烯基表示在各情況下可為直鏈或分支鏈之具有2至20個碳原子之單或多不飽和烴基,環烷基表示具有3至20個碳原子之烴,芳基表示5至14員芳族基,其中芳基中之1至4個碳原子亦可經來自群組氮、氧及硫之雜原子置換,以便存在5至14員雜芳族基團,其中基團R2"至R9"亦可帶有如R1"所定義之其他取代基。
有機膦及其合成描述於WO2004101581中。
較佳有機膦係選自經三取代之式之膦,
1)R5"與R6"一起形成環。2)R3"與R4"一起形成環。
較佳催化劑之實例包括以下化合物:乙醯基丙酮酸鈀(II)、鈀(0)二亞苄基丙酮錯合物、丙酸鈀(II)、Pd2(dba)3:[參(二亞苄基丙酮)二鈀(0)],Pd(dba)2:[雙(二亞苄基丙酮)鈀(0)],Pd(PR3)2,其中PR3為經三取代之式VI之膦,Pd(OAc)2:[[乙酸鈀(II)]、氯化鈀(II)、溴化鈀(II)、四氯鈀酸(II)鋰,PdCl2(PR3)2;其中PR3為經三取代之式VI之膦;鈀(0)二烯丙基醚錯合物、硝酸鈀(II),PdCl2(PhCN)2:[二氯雙(苯甲腈)鈀(II)],PdCl2(CH3CN):[二氯雙(乙腈)鈀(II)],及PdCl2(COD):[氯(1,5-環辛二烯)鈀(II)]。
尤其較佳為PdCl2、Pd2(dba)3、Pd(dba)2、Pd(OAc)2或Pd(PR3)2。最佳為Pd2(dba)3及Pd(OAc)2。
鈀催化劑以催化量存在於反應混合物中。術語「催化量」係指明顯低於(雜)芳族化合物之1當量之量,較佳以所用(雜)芳族化合物之當量計0.001至5莫耳%,最佳0.001至1莫耳%。
反應混合物中膦或鏻鹽之量較佳為以所用(雜)芳族化合物之當量計0.001至10莫耳%,最佳0.01至5莫耳%。較佳Pd:膦比率為1:4。
鹼可選自所有水性及非水性鹼且可為無機或有機鹼。較佳每官
能性硼基至少1.5當量該鹼存在於反應混合物中。適當鹼為例如鹼金屬及鹼土金屬氫氧化物、羧酸鹽、碳酸酯、氟化物及磷酸鹽,諸如氫氧化鈉及氫氧化鉀、乙酸鈉及乙酸鉀、碳酸鈉及碳酸鉀、氟化鈉及氟化鉀、及磷酸鈉及磷酸鉀、或亦為金屬醇化物。亦可使用鹼之混合物。鹼較佳為鋰鹽,諸如烷醇鋰(諸如甲醇鋰及乙醇鋰)、氫氧化鋰、羧酸鋰、碳酸鋰、氟化鋰及/或磷酸鋰。
目前最佳之鹼為水性LiOHxH2O(LiOH之單水合物)及(無水)LiOH。
反應通常在約0℃至180℃,較佳20至160℃,更佳40至140℃且最佳40至120℃下進行。聚合反應可耗時0.1,尤其0.2至100小時。
在本發明之一個較佳實施例中,溶劑為四氫呋喃(THF),鹼為LiOH*H2O且反應在THF之回流溫度(約65℃)下進行。
溶劑例如係選自甲苯、二甲苯、苯甲醚、THF、2-甲基四氫呋喃、二噁烷、氯苯、氟苯或包含如THF/甲苯之一或多種溶劑及視情況存在之水的溶劑混合物。最佳為THF或THF/水。
聚合宜在存在以下之情況下進行:a)乙酸鈀(II)或Pd2(dba)3(參(二亞苄基丙酮)二鈀(0))及有機膦A-1至A-13,b)LiOH或LiOHxH2O;及c)THF及視情況存在之水。若使用LiOH之單水合物,則無需添加水。鈀催化劑之含量較佳為以所用(雜)芳族化合物之當量計約0.5莫耳%。反應混合物中膦或鏻鹽之量較佳為以所用(雜)芳族化合物之當量計約2莫耳%。較佳Pd:膦比率為約1:4。
聚合反應較佳在惰性條件下在無氧氣存在下進行。使用氮氣且更佳氬氣作為惰性氣體。
WO2010/136352中所述之方法適用於大規模應用,容易達到且使
起始材料以高產率、高純度及高選擇性轉化為各別聚合物。該方法可提供重量平均分子量為至少10,000,更佳至少20,000,最佳至少30,000之聚合物。目前最佳之聚合物之重量平均分子量為30,000至80,000道爾頓。分子量根據使用聚苯乙烯標準物之高溫凝膠滲透層析(HT-GPC)來測定。聚合物之多分散性較佳為1.01至10,更佳為1.1至3.0,最佳為1.5至2.5。
必要時,單官能性芳基鹵化物或芳基酸鹽,諸如
及,在該等反應中可用作鏈-終止子,由此致使形成末端芳基。
可能藉由控制鈴木反應中單體饋料之次序及組成來控制所得共聚物中單體單元之定序。
本發明聚合物亦可藉由史帝爾偶合(Stille coupling)合成(參見例如Babudri等人,J.Mater.Chem.,2004,14,11-34;J.K.Stille,Angew.
Chemie Int.Ed.英文版,1986,25,508)。為製備對應於式III之聚合物,在惰性溶劑中在0℃至200℃範圍內之溫度下在含鈀催化劑存在下,使式X10-A-X10之二鹵化物與式X11'-COM1-X11'之化合物反應,或使式X10-COM1-X10之二鹵化物與式X11'-A-X11'之化合物反應,其中X11'為基團-SnR207R208R209且X10係如上文所定義,其中R207、R208及R209相同或不同且為H或C1-C6烷基,其中兩個基團視情況形成共同環且此等基團視情況為分支鏈或未分支鏈的。本文中必須確保所用所有單體之整體具有有機錫官能基與鹵素官能基之高平衡比。另外,可證明宜在反應結束時藉由以單官能性試劑封端來移除任何過量反應性基團。為實施該方法,較佳將錫化合物及鹵素化合物引入一或多種惰性有機溶劑中且在0至200℃,較佳30至170℃之溫度下攪拌1小時至200小時,較佳5小時至150小時。粗產物可藉由熟習此項技術者已知且適合於各別聚合物之方法(例如重複再沈澱或甚至藉由透析)來純化。
適用於所述方法之有機溶劑為例如醚類,例如***、二甲氧基乙烷、二乙二醇二甲醚、四氫呋喃、二噁烷、二氧雜環戊烷、二異丙基醚及第三丁基甲醚;烴類,例如己烷、異己烷、庚烷、環己烷、苯、甲苯及二甲苯;醇類,例如甲醇、乙醇、1-丙醇、2-丙醇、乙二醇、1-丁醇、2-丁醇及第三丁醇;酮類,例如丙酮、乙基甲基酮及異丁基甲基酮;醯胺類,例如二甲基甲醯胺(DMF)、二甲基乙醯胺及N-甲基吡咯啶酮;腈類,例如乙腈、丙腈及丁腈;及其混合物。
應類似地根據關於鈴木變化形式之描述來選擇鈀及膦組分。
或者,本發明聚合物亦可藉由根岸反應(Negishi reaction)使用鋅試劑A-(ZnX12)2(其中X12為鹵素及鹵化物)及COM1-(X23)2(其中X23為鹵素或三氟甲磺酸酯基)或使用A-(X23)2及COM1-(ZnX23)2合成。舉例而言,參考E.Negishi等人,Heterocycles 18(1982)117-22。
或者,本發明聚合物亦可藉由檜山反應(Hiyama reaction)使用有
機矽試劑A-(SiR210R211R212)2(其中R210、R211及R212相同或不同且為鹵素或C1-C6烷基)及COM1-(X23)2(其中X23為鹵素或三氟甲磺酸酯基)或使用A-(X23)2及COM1-(SiR210R211R212)2合成。舉例而言,參考T.Hiyama等人,Pure Appl.Chem.66(1994)1471-1478及T.Hiyama等人,Synlett(1991)845-853。
(A)n型均聚物可經由二鹵化物X10-A-X10之山本偶合(Yamamoto coupling)獲得,其中X10為鹵素,較佳為Br。或者,(A)n型均聚物可例如用FeCl3作為氧化劑經由單元X10-A-X10之氧化聚合獲得,其中X10為氫。
適用於製備包含式(I)之重複單元之聚合物的單體之可能存在之合成途徑,其中R1及R2相同且為視情況經取代之C6-C24芳基或C2-C20雜芳基;如下所示:
式(XVII)化合物可藉由在丁基鋰存在下在適當溶劑中使式(XX)化合物與1,4-二甲基-哌嗪-2,3-二酮反應獲得:
式(XVIII)化合物可藉由在適當溶劑中使式(XVII)化合物與N-溴代丁二醯亞胺(NBS)反應獲得:
式(I)之重複單元之中間物,其中R1與R2一起形成基團,可藉由在高溫下在TiCl4存在下在二氯甲烷中使式(XVIII)化合物與環己-2-烯-1-酮反應獲得。
舉例而言,參考WO2009115413。
式(VIII)及(IX)之化合物可藉由使用上文所述中間物及例如WO2012175530及WO2010/115767中所述之合成方法來製備。
式或之化合物為製造聚合物中之中間物,為新穎化合物且形成本發明之另一標的。A1'及A2'彼此獨立地為式之基團,其中X2及X2'彼此獨立地為鹵素、ZnX12、-SnR207R208R209,其中R207、R208及R209相同或不同且為H或C1-C6烷基,其中兩個基團視情況形成共同環且此等基團視情況為分支鏈或未分支鏈的且X12為鹵素原子;或-OS(O)2CF3、-
OS(O)2-芳基、-OS(O)2CH3、-B(OH)2、-B(OY1)2、、
、-BF4Na或-BF4K,其中Y1在每次出現時獨立地為C1-C10烷基
且Y2在每次出現時獨立地為C2-C10伸烷基,諸如-CY3Y4-CY5Y6-或-CY7Y8-CY9Y10-CY11Y12-,其中Y3、Y4、Y5、Y6、Y7、Y8、Y9、Y10、Y11及Y12彼此獨立地為氫或C1-C10烷基,尤其-C(CH3)2C(CH3)2-、-C(CH3)2CH2C(CH3)2-或-CH2C(CH3)2CH2-;且Y13及Y14彼此獨立地為氫或C1-C10烷基。a、b、c、p、q、Ar1、Ar2、Ar3、Y、Y15、Y16、Y17、A3、A4、A5及A5'係如上文所定義。
式(IV)或(V)之化合物可用於製造包含式或之重複單元之聚合物,其中A1'及A2'彼此獨立地為式之基團,其中a、b、c、p、q、Ar1、Ar2、Ar3、Y、Y15、Y16、Y17、A3、A4、A5及A5'係如上文所定義。
鹵素為氟、氯、溴及碘。
C1-C100烷基較佳為C1-C38烷基,尤其C1-C25烷基。參考R201之定義。
若可能,C1-C25烷基(C1-C18烷基)一般為直鏈或分支鏈的。實例為甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、2-戊基、3-戊基、2,2-二甲基丙基、1,1,3,3-四甲基戊基、正己基、1-甲基己基、1,1,3,3,5,5-六甲基己基、正庚基、異庚基、1,1,3,3-四甲基丁基、1-甲基庚基、3-甲基庚基、正辛基、1,1,3,3-四甲基丁基及2-乙基己基、正壬基、癸基、十一烷基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、二
十烷基、二十一烷基、二十二烷基、二十四烷基或二十五基。C1-C8烷基通常為甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、2-戊基、3-戊基、2,2-二甲基-丙基、正己基、正庚基、正辛基、1,1,3,3-四甲基丁基及2-乙基己基。C1-C4烷基通常為甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基。
C2-C25烯基(C2-C18烯基)為直鏈或分支鏈烯基,諸如乙烯基、烯丙基、甲基烯丙基、異丙烯基、2-丁烯基、3-丁烯基、異丁烯基、正戊-2,4-二烯基、3-甲基-丁-2-烯基、正辛-2-烯基、正十二-2-烯基、異十二烯基、正十二-2-烯基或正十八-4-烯基。
C2-25炔基(C2-18炔基)為直鏈或分支鏈的,且較佳為可未經取代或經取代之C2-8炔基,諸如乙炔基、1-丙炔-3-基、1-丁炔-4-基、1-戊炔-5-基、2-甲基-3-丁炔-2-基、1,4-戊二炔-3-基、1,3-戊二炔-5-基、1-己炔-6-基、順-3-甲基-2-戊烯-4-炔-1-基、反-3-甲基-2-戊烯-4-炔-1-基、1,3-己二炔-5-基、1-辛炔-8-基、1-壬炔-9-基、1-癸炔-10-基或1-二十四炔-24-基。
鹵化C1-C25烷基為分支鏈或未分支鏈基團,其中相應烷基之所有或部分氫原子已經鹵素原子置換。
與脂族烴基相反,脂族基可經任何非環狀取代基取代,但較佳未經取代。較佳取代基為如下文所進一步例示之C1-C8烷氧基或C1-C8烷硫基。術語「脂族基」亦包含其中某些不相鄰碳原子經氧置換之烷基,如-CH2-O-CH2-CH2-O-CH3。-CH2-O-CH2-CH2-O-CH3基團可視為經-O-CH2-CH2-O-CH3取代之甲基。
具有至多25個碳原子之脂族烴為如上文所例示之具有至多25個碳原子之直鏈或分支鏈烷基、烯基或炔基(alkynyl)(亦拼寫為alkinyl)。
伸烷基為二價烷基,亦即具有兩個(而非一個)游離原子價之烷基,例如三亞甲基或四亞甲基。
伸烯基為二價烯基,亦即具有兩個(而非一個)游離原子價之烯基,例如-CH2-CH=CH-CH2-。
與脂族烴基相反,脂族基可經任何非環狀取代基取代,但較佳未經取代。較佳取代基為如下文所進一步例示之C1-C8烷氧基或C1-C8烷硫基。術語「脂族基」亦包含其中某些不相鄰碳原子經氧置換之烷基,如-CH2-O-CH2-CH2-O-CH3。後者基團可視為經-O-CH2-CH2-O-CH3取代之甲基。
環脂族烴基為可經一或多個脂族及/或環脂族烴基取代之環烷基或環烯基。
環脂族-脂族基為經環脂族基取代之脂族基,其中術語「環脂族」及「脂族」具有本文給出之含義且其中游離價自脂族部分延伸。因此,環脂族-脂族基為例如環烷基-烷基。
環烷基-烷基為經環烷基取代之烷基,例如環己基-甲基。
「環烯基」意謂含有一或多個雙鍵之不飽和脂環族烴基,諸如環戊烯基、環戊二烯基、環己烯基及其類似物,其可未經取代或經一或多個脂族及/或環脂族烴基取代及/或與苯基縮合。
R28與R27一起表示伸烷基或伸烯基(兩者皆可經由氧及/或硫鍵結至噻吩基殘基且兩者皆可具有至多25個碳原子)之式IVb之二價基團為例如式或之基團,
其中A20表示具有至多25個碳原子之直鏈或分支鏈伸烷基,較佳可經一或多個烷基取代之伸乙基或伸丙基,且Y20表示氧或硫。舉例而言,式-Y20-A20-O-之二價基團表示-O-CH2-CH2-O-或-O-CH2-CH2-
CH2-O-。
彼此鄰近之兩個基團R22至R26一起表示具有至多8個碳原子之伸烷基或伸烯基,由此形成環之式IVa之基團為例如式或
之基團,其中在式XXXII之基團中,R23與R24一起表示1,4-伸丁基且在式XXXIII之基團中,R23與R24一起表示1,4-伸丁-2-烯基。
C1-C100烷氧基較佳為C1-C38烷氧基,尤其C1-C25烷氧基。C1-C25烷氧基(C1-C18烷氧基)為直鏈或分支鏈烷氧基,例如甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、第三丁氧基、戊氧基、異戊氧基或第三戊氧基、庚氧基、辛氧基、異辛氧基、壬氧基、癸氧基、十一烷基氧基、十二烷基氧基、十四烷基氧基、十五烷基氧基、十六烷基氧基、十七烷基氧基及十八烷基氧基。C1-C8烷氧基之實例為甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、異丁氧基、第三丁氧基、正戊氧基、2-戊氧基、3-戊氧基、2,2-二甲基丙氧基、正己氧基、正庚氧基、正辛氧基、1,1,3,3-四甲基丁氧基及2-乙基己氧基,較佳C1-C4烷氧基,諸如通常為甲氧基、乙氧基、正丙氧基、異丙氧基、正丁氧基、第二丁氧基、異丁氧基、第三丁氧基。術語「烷硫基」意謂與烷氧基相同之基團,但其中改用硫原子置換醚鍵聯之氧原子。
C1-C18氟烷基,尤其C1-C4氟烷基為分支鏈或未分支鏈基團,其中相應烷基之所有或部分氫原子已經氟原子置換,諸如-CF3、-CF2CF3、-CF2CF2CF3、-CF(CF3)2、-(CF2)3CF3及-C(CF3)3。
術語「胺甲醯基」通常為C1-18胺甲醯基,較佳為C1-8胺甲醯基,其可未經取代或經取代,諸如胺甲醯基、甲基胺甲醯基、乙基胺甲醯基、正丁基胺甲醯基、第三丁基胺甲醯基、二甲基胺甲醯基氧基、嗎啉基胺甲醯基或吡咯啶并胺甲醯基。
環烷基通常為C4-C18環烷基,諸如環戊基、環己基、環庚基、環辛基、環壬基、環癸基、環十一烷基、環十二烷基,較佳環戊基、環己基、環庚基或環辛基,其可未經取代或經取代。環烷基(詳言之環己基)可與可經C1-C4烷基、鹵素及氰基取代一至三次之苯基縮合一或兩次。該等縮合環己基之實例為:
尤其或,其中R151、R152、R153、R154、R155及R156彼此獨立地為C1-C8烷基、C1-C8烷氧基、鹵素及氰基,詳言之氫。
C6-C24芳基(C6-C18芳基)通常為苯基、茚基、薁基、萘基、聯二苯、as-二環戊二烯并苯基、s-二環戊二烯并苯基、苊基、茀基、菲基、茀蒽基、三萉基(triphenlenyl)、基、稠四苯基、苉基、苝基、五苯基、稠六苯基、芘基或蒽基,較佳苯基、1-萘基、2-萘基、4-聯二苯、9-菲基、2-茀基或9-茀基、3-聯二苯或4-聯二苯,其可未經取代或經取代。C6-C12芳基之實例為苯基、1-萘基、2-萘基、3-或4-聯苯
基、2-或9-茀基或9-菲基,其可未經取代或經取代。
C7-C25芳烷基通常為苄基、2-苄基-2-丙基、β-苯基-乙基、α,α-二甲基苯甲基、ω-苯基-丁基、ω,ω-二甲基-ω-苯基-丁基、ω-苯基-十二烷基、ω-苯基-十八烷基、ω-苯基-二十烷基或ω-苯基-二十二烷基,較佳C7-C18芳烷基,諸如苄基、2-苄基-2-丙基、β-苯基-乙基、α,α-二甲基苯甲基、ω-苯基-丁基、ω,ω-二甲基-ω-苯基-丁基、ω-苯基-十二烷基或ω-苯基-十八烷基,及尤其較佳C7-C12芳烷基,諸如苄基、2-苄基-2-丙基、β-苯基-乙基、α,α-二甲基苯甲基、ω-苯基-丁基或ω,ω-二甲基-ω-苯基-丁基,其中脂族烴基與芳族烴基皆可未經取代或經取代。較佳實例為苄基、2-苯基乙基、3-苯基丙基、萘基乙基、萘基甲基及異丙苯基。
雜芳基通常為C2-C20雜芳基,亦即具有五至七個環原子之環或縮合環系統,其中氮、氧或硫為可能之雜原子,且通常為具有5至30個原子之具有至少六個共軛π電子之不飽和雜環基,諸如噻吩基、苯并[b]噻吩基、二苯并[b,d]噻吩基、噻嗯基、呋喃基、呋喃甲基、2H-哌喃基、苯并呋喃基、異苯并呋喃基、二苯并呋喃基、苯氧基噻吩基、吡咯基、咪唑基、吡唑基、吡啶基、聯吡啶基、三嗪基、嘧啶基、吡嗪基、噠嗪基、吲哚嗪基、異吲哚基、吲哚基、吲唑基、嘌呤基、喹嗪基、喹啉基(chinolyl)、異喹啉基、酞嗪基、啶基、喹喏啉基、喹唑啉基、啉基、喋啶基、咔唑基、咔啉基、苯并***基、苯并噁唑基、啡啶基、吖啶基、嘧啶基、啡啉基、啡嗪基、異噻唑基、啡噻嗪基、異噁唑基、呋呫基或啡噁嗪基,其可未經取代或經取代。
以上所提及之基團之可能取代基為C1-C8烷基、羥基、巰基、C1-C8烷氧基、C1-C8烷硫基、鹵素、鹵基-C1-C8烷基、氰基、胺甲醯基、硝基或矽烷基,尤其C1-C8烷基、C1-C8烷氧基、C1-C8烷硫基、鹵素、鹵基-C1-C8烷基或氰基。
雜有一或多個O之C1-C25烷基(C1-C18烷基)為例如(CH2CH2O)1-9-Rx,其中Rx為H或C1-C10烷基;CH2-CH(ORy')-CH2-O-Ry,其中Ry為C1-C18烷基且Ry'包含與Ry相同之定義或為H。
若取代基(諸如R3)在一基團中出現一次以上,則其在每次出現時可不同。
本發明亦關於聚合物或化合物在有機電子裝置中之用途。
有機電子裝置為例如有機電致發光裝置(OLED)、聚合電致發光裝置(PLED)、有機積體電路(O--IC)、有機場效應電晶體(O-FET)、有機薄膜電晶體(O-TFT)、有機發光電晶體(O-LET)、有機太陽能電池(O-SC)、有機光偵測器、有機感光器、有機場淬滅裝置(O-FQD)、發光電化學電池(LEC)或有機雷射二極體(O-雷射)。
就本發明而言,較佳為在電子裝置中呈層形式(或以層形式存在)之本發明聚合物或化合物。本發明聚合物或化合物可以電洞傳輸、電洞注入、發射極、電子傳輸、電子注入、電荷阻擋及/或電荷產生層形式存在。本發明聚合物或化合物可例如用作發射層中之發射化合物。
另外可較佳使用不呈純物質形式,但作為替代連同任何所需類型之其他聚合、寡聚、樹枝狀或低分子量物質一起呈混合物(摻合物)形式之聚合物。由此可例如改良電子特性。
含有本發明聚合物之混合物產生包含本發明聚合物(通常為5重量%至99.9999重量%,尤其為20重量%至85重量%)及至少另一材料之半導體層。該另一材料可為(但不限於)本發明相同聚合物之具有不同分子量之部分、本發明之另一聚合物、半導體聚合物、有機小分子、碳奈米管、富勒烯衍生物、無機粒子(量子點、量子桿、量子三角架、TiO2、ZnO等)、導電性粒子(Au、Ag等)、絕緣體材料(如關於閘極介電質所述之絕緣體材料(PET、PS等))。
本發明聚合物可與本發明之式VIII或IX之化合物或例如WO2009/047104、WO2010108873、WO09/047104、US6,690,029、WO2007082584及WO2008107089所述之小分子摻合:
WO2007082584:
WO2008107089:
其中Y1'及Y2'中之一者表示-CH=或=CH-且另一者表示-X*-,其中Y3'及Y4'中之一者表示-CH=或=CH-且另一者表示-X*-,X*為-O-、-S-、-Se-或-NR"'-,R*為具有1至20個C原子之環狀直鏈或分支鏈烷基或烷氧基,或具有2至30個C原子之芳基,所有均視情況氟化或全氟化,R'為H、F、Cl、Br、I、CN、具有1至20個C原子且視情況氟化或全氟化之直鏈或分支鏈烷基或烷氧基、具有6至30個C原子之視情況
氟化或全氟化之芳基、或CO2R",其中R"為H、具有1至20個C原子之視情況氟化之烷基、或具有2至30個C原子之視情況氟化之芳基,R"'為H或具有1至10個C原子之環狀直鏈或分支鏈烷基,y為0或1,x為0或1。
因此,本發明亦關於一種包含本發明聚合物之有機半導體材料、層或組分。
本發明聚合物可用作半導體裝置中之半導體層。因此,本發明亦關於包含本發明聚合物或有機半導體材料、層或組分之半導體裝置。半導體裝置尤其為有機光伏打(PV)裝置(太陽能電池)、光電二極體或有機場效應電晶體。
本發明聚合物可單獨或以組合形式用作半導體裝置之有機半導體層。該層可藉由任何有用方式提供,諸如氣相沈積(對於具有相對低分子量之材料而言)及印刷技術。本發明化合物在有機溶劑中可具有足夠可溶性且可經溶液沈積及圖案化(例如藉由旋塗、浸塗、噴墨印刷、凹板印刷、柔性印刷、平板印刷、網版印刷、微接觸(波)印刷、滴落或區域鑄造或其他已知技術)。
本發明聚合物可用於包含複數個OTFT之積體電路中以及各種電子物品中。該等物品包括例如射頻鑑別(RFID)標籤、柔性顯示器之底板(對於用於例如個人電腦、蜂巢式電話或手持型裝置而言)、智慧卡、記憶體裝置、感測器(例如光、影像、生物、化學、機械或溫度感測器),尤其光電二極體,或保全裝置及其類似物。
本發明之另一態樣為包含一或多種本發明聚合物之有機半導體材料、層或組分。另一態樣為本發明聚合物或材料在有機光伏打(PV)裝置(太陽能電池)、光電二極體或有機場效應電晶體(OFET)中之用途。另一態樣為包含本發明之聚合物或材料之有機光伏打(PV)裝置(太陽能電池)、光電二極體或有機場效應電晶體(OFET)。
本發明聚合物通常以厚度較佳小於30微米之薄有機層或薄膜形式用作有機半導體。本發明之半導體層厚度通常為至多1微米(=1μm),但若需要則可更厚。對於各種電子裝置應用,厚度亦可小於約1微米厚。舉例而言,對於用於OFET而言,層厚度通常可為100nm或100nm以下。層之確切厚度將視例如使用層之電子裝置的需求而定。
舉例而言,OFET中汲極與源極之間的作用半導體通道可包含本發明之層。
本發明之OFET裝置較佳包含:-源極電極,-汲極電極,
-閘極電極,-半導體層,-一或多個閘極絕緣體層,及-視情況存在之基板,其中該半導體層包含一或多種本發明聚合物。
OFET裝置中之閘極、源極及汲極電極以及絕緣及半導體層可以任何次序排列,其限制條件為源極及汲極電極與閘極電極由絕緣層隔開,閘極電極與半導體層皆接觸絕緣層且源極電極與汲極電極皆接觸半導體層。
OFET較佳包含具有第一面及第二面之絕緣體、位於該絕緣體之第一面上之閘極電極、位於該絕緣體之第二面上的包含本發明聚合物之層及位於該聚合物層上之汲極電極及源極電極。
OFET裝置可為頂閘極裝置或底閘極裝置。
OFET裝置之適當結構及製造方法為一般熟習此項技術者所已知且描述於文獻中,例如WO03/052841中。
閘極絕緣體層可包含例如氟聚合物,如市售Cytop 809M®或Cytop 107M®(來自Asahi Glass)。閘極絕緣體層較佳例如藉由旋塗、刀片刮抹、線棒塗佈、噴霧或浸塗或其他已知方法由包含絕緣體材料及一或多種具有一或多個氟原子之溶劑(含氟溶劑),較佳全氟溶劑之調配物沈積。適當全氟溶劑為例如FC75®(獲自Acros,目錄號12380)。其他適當氟聚合物及含氟溶劑自先前技術已知,如全氟聚合物鐵氟龍(Teflon)AF® 1600或2400(來自DuPont)或Fluoropel®(來自Cytonix)或全氟溶劑FC 43®(Acros,編號12377)。
包含本發明聚合物之半導體層另外可包含至少另一種材料。另一材料可為(但不限於)本發明之另一聚合物、半導體聚合物、聚合黏合劑、不同於本發明聚合物之有機小分子、碳奈米管、富勒烯衍生
物、無機粒子(量子點、量子桿、量子三角架、TiO2、ZnO等)、導電性粒子(Au、Ag等)及絕緣體材料(如關於閘極介電質所述之絕緣體材料(PET、PS等))。如上所述,半導體層亦可由一或多種本發明聚合物與聚合黏合劑之混合物構成。本發明聚合物與聚合黏合劑之比率可自5%至95%變動。聚合黏合劑較佳為半結晶聚合物,諸如聚苯乙烯(PS)、高密度聚乙烯(HDPE)、聚丙烯(PP)及聚甲基丙烯酸甲酯(PMMA)。利用此技術,可避免電氣效能退化(參見WO2008/001123A1)。
本發明聚合物宜用於有機光伏打(PV)裝置(太陽能電池)中。因此,本發明提供包含本發明聚合物之PV裝置。此構造之裝置亦具有整流特性,因此亦可稱為光電二極體。光響應裝置可用作自光發電之太陽能電池且用作量測或偵測光之光偵測器。
PV裝置按以下次序包含:(a)陰極(電極),(b)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(c)光活性層,(d)視情況存在之平滑層,(e)陽極(電極),(f)基板。
光活性層包含本發明聚合物。光活性層較佳由本發明之共軛聚合物作為電子供體及如富勒烯、尤其官能化富勒烯PCBM之受體材料作為電子受體製成。如上所述,光活性層亦可含有聚合黏合劑。式I聚合物與聚合黏合劑之比率可自5%至95%變動。聚合黏合劑較佳為半結晶聚合物,諸如聚苯乙烯(PS)、高密度聚乙烯(HDPE)、聚丙烯(PP)及聚甲基丙烯酸甲酯(PMMA)。
對於異質接面太陽能電池而言,活性層較佳包含重量比為1:1至
1:3之本發明聚合物與富勒烯(諸如[60]PCBM(=6,6-苯基-C61-丁酸甲酯)或[70]PCBM)之混合物。適用於本發明之富勒烯可具有寬範圍之尺寸(每個分子之碳原子數)。如本文所用之術語富勒烯包括純碳之各種籠樣分子,包括巴克敏斯特富勒烯(Buckminsterfullerene,C60)及相關「球形」富勒烯以及碳奈米管。富勒烯可選自此項技術中已知之在例如C20-C1000範圍內之彼等富勒烯。富勒烯較佳係選自C60至C96之範圍。富勒烯最佳為C60或C70,諸如[60]PCBM或[70]PCBM。亦容許利用經化學改質之富勒烯,其限制條件為經改質富勒烯保留受體型及電子遷移率特徵。受體材料亦可為選自由諸如以下之任何半導體聚合物組成之群的材料:本發明之聚合物(其限制條件為聚合物保留受體型及電子遷移率特徵)、有機小分子、碳奈米管、無機粒子(量子點、量子桿、量子三腳架、TiO2、ZnO等)。
光活性層由本發明之聚合物作為電子供體及富勒烯、尤其官能化富勒烯PCBM作為電子受體製成。此等兩種組分與溶劑混合且以溶液形式藉由例如旋塗方法、滴落鑄造方法、朗繆爾-布羅吉(Langmuir-Blodgett;「LB」)方法、噴墨印刷方法及滴淋方法塗覆於平滑層上。亦可使用刮漿板或印刷方法塗佈具有該類光活性層之更大表面。替代典型之甲苯,較佳使用諸如氯苯之分散劑作為溶劑。在此等方法中,鑒於易於操作及成本,真空沈積方法、旋塗方法、噴墨印刷方法及鑄造方法尤其較佳。
在藉由使用旋塗方法、鑄造方法及噴墨印刷方法形成層之情況下,塗佈可使用藉由將組合物溶解或分散於適當有機溶劑(諸如苯、甲苯、二甲苯、四氫呋喃、甲基四氫呋喃、N,N-二甲基甲醯胺、丙酮、乙腈、苯甲醚、二氯甲烷、二甲亞碸、氯苯、1,2-二氯苯及其混合物)中製備之濃度為0.01至90重量%之溶液及/或分散液進行。
光伏打(PV)裝置亦可由多個經加工彼此疊置之接面太陽能電池組
成,以吸收更多太陽光譜。該等結構例如描述於App.Phys.Let.90,143512(2007),Adv.Funct.Mater.16,1897-1903(2006)及WO2004/112161中。
所謂『串聯太陽電池』按此次序包含:(a)陰極(電極),(b)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(c)光活性層,(d)視情況存在之平滑層,(e)中間電極(諸如Au、Al、ZnO、TiO2等)(f)視情況存在之額外電極以匹配能階,(g)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(h)光活性層,(i)視情況存在之平滑層,(j)陽極(電極),(k)基板。
PV裝置亦可加工於纖維上,如例如US20070079867及US20060013549中所述。
由於包含本發明聚合物之材料或薄膜具有極佳自組織特性,故其亦可單獨或連同其他材料一起用於或作為對準層用於LCD或OLED裝置中,如例如US2003/0021913中所述。
本發明之另一目的為提供在用於有機場效應電晶體、有機光伏打裝置(太陽能電池能)及光電二極體中時顯示高能量轉化效率、極佳場效應遷移率、良好接通/斷開電流比率及/或極佳穩定性之化合物。
在另一個實施例中,本發明係關於式或
之化合物,其中Y、Y15、Y16及Y17彼此獨立地為式之基團,其中R1、R2、R601及R602係如本文所定義,p為0或1,q為0或1;A1及A2彼此獨立地為下式之基團
a為0、1、2或3、b為0、1、2或3;c為0、1、2或3;A3、A4、A5及A5'彼此獨立地為下式之基團-[Ar4]k'-[Ar5]l-[Ar6]r-[Ar7]z-;k'為0、1、2或3;l為0、1、2或3;r為0、1、2或3;z為0、1、2或3;R10為氫、鹵素、氰基、C1-C25烷基、經E"取代一或多次及/或雜
有D"一或多次之C1-C25烷基、、COO-C1-C18烷基、C4-C18環烷基、經G"取代之C4-C18環烷基、C2-C18烯基、C2-C18炔基、C1-C18硫烷氧基、C1-C18烷氧基、經E"取代及/或雜有D"之C1-C18烷氧基、C7-C25芳烷基、經G"取代之C7-C25芳烷基、或式IVa至IVm之基團,
其中R22至R26及R29至R58彼此獨立地表示H、鹵素、氰基、C1-C25烷基、經E"取代及/或雜有D"之C1-C25烷基、C6-C24芳基、經G"取代之C6-C24芳基、C2-C20雜芳基、經G"取代之C2-C20雜芳基、C4-C18環烷基、經G"取代之C4-C18環烷基、C2-C18烯基、C2-C18炔基、C1-C18烷氧基、經E"取代及/或雜有D"之C1-C18烷氧基、C7-C25芳烷基或經G"取代之C7-C25芳烷基,
R27及R28彼此獨立地為氫、C1-C25烷基、鹵素、氰基或C7-C25芳烷基,或R27與R28一起表示伸烷基或伸烯基,兩者皆可經由氧及/或硫鍵結至噻吩基殘基且兩者皆可具有至多25個碳原子,R59為氫、C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;或可視情況雜有一或多個氧或硫原子之C1-C25烷基;或C7-C25芳基烷基,D"為-CO-、-COO-、-S-、-O-或-NR112"-,E"為C1-C8硫烷氧基、C1-C8烷氧基、CN、-NR112"R113"、-CONR112"R113"或鹵素,G"為E"或C1-C18烷基,及R112"及R113"彼此獨立地為H;C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;C1-C18烷基;或雜有-O-之C1-C18烷基;R214及R215彼此獨立地為氫、C1-C18烷基、C6-C24芳基、C2-C20雜芳基、-CN或COOR216;R216為C1-C25烷基、C1-C25鹵烷基、C7-C25芳基烷基、C6-C24芳基或C2-C20雜芳基;R218為氫、C6-C18芳基;經C1-C18烷基或C1-C18烷氧基取代之C6-C18芳基;或可視情況雜有一或多個氧或硫原子之C1-C25烷基;或C7-C25芳基烷基,Ar1、Ar2、Ar3、Ar4、Ar5、Ar6及Ar7彼此獨立地為下式之基團:(XIa)、(XIb)、(XIc)、(XId)、(XIe)、(XIf)、(XIg)、(XIh)、(XIi)、(XIj)、(XIk)、(XIl)、(XIm)、(XIn)、(XIo)、(XIpa)、(XIpb)、(XIq)、(XIr)、(XIs)、(XIt)、(XIu)、(XIv)、(XIw)、(XIx)、(XIy)、(XIz)、(XIIa)、(XIIb)、(XIIc)、(XIId)、(XIIe)、(XIIf)、(XIIg)、(XIIh)、(XIIi)、(XIIj)、(XIIk);(XIII),諸如(XIIIa)、(XIIIb)、(XIIIc)、(XIIId)、(XIIIe)、(XIIIf)、(XIIIg)、(XIIIh)、(XIIIi)、
(XIIIj)、(XIIIk)及(XIIIl);或(XIV),諸如(XIVa);(XVa)、(XVb)、(XVc)、(XVd)、(XVe)、(XVf)、(XVg)、(XVh)、(XVi)、(XVj)、(XVk)、(XVl)、(XVm)、(XVn)、(XVo)、(XVp)、(XVq)、(XVr);(XVs),諸如(XVsa)、(XVsb)及(XVsc);(XVt),諸如(XVta)、(XVtb)及(XVuc)、及(XVu)。
由式表示之結構可以兩種方式鍵結至式A3、A4、A5及A5'之基團:及(點線表示鍵結至式A3、A4、A5及A5'之基團)。兩種可能性皆應由式(I)涵蓋。
化合物較佳為式A1-Y-A3-Y15-A2(VIIIa)、A1-Y-A3-Y15-A4-Y16-A2(VIIIb)或A1-Y-A3-Y15-A4-Y16-A5-Y17-A2(VIIIc)、A1-A3-Y-A4-A2(IXa)、A1-A3-Y-A4-Y15-A5-A2(IXb)或A1-A3-Y-A4-Y15-A5-Y17-A5'-A2(IXc)之化合物,其中Y、Y15、Y16及Y17彼此獨立地為式之基團,其中R1及R2彼此獨立地為式、、或之基團,
其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基;C1-C18烷基;或雜有-O-之C1-C18烷基,或R1與R2一起形成基團;及R601及R602彼此獨立地為氫或C1-C25烷基,尤其氫。
A1及A2係如本文所定義,A3、A4、A5及A5'彼此獨立地為下式之基團:
或;其中R3、R3'、R4及R4'彼此獨立地為氫或C1-C25烷基;R8及R8'彼此獨立地為氫或C1-C25烷基;R114為C1-C38烷基;R201為C1-C38烷基;且R202及R203'彼此獨立地為氫或C1-C25烷基。
R1及R2尤其為式之基團,極尤其為式之基團。R1及R2可相同,但較佳相同。
式(I)之基團較佳為式
或,尤其(Ia)之基團。
在一個較佳實施例中,A3、A4、A5及A5'彼此獨立地為下式之基團:(XVb)、(XVb')、(XVh)、(XVh')、(XVi)、(XVi')、(XVu')、(XVu")及(XVu''')。在一個尤其較佳實施例中,A3、A4、A5及A5'係選自下式之基團(XVb)、(XVc)、(XVu')、(XVu")及(XVu''')。
在本發明之一個較佳實施例中,A1及A2彼此獨立地為下式之基團:H、、、、、、、、、、或。
在一個較佳實施例中,本發明係針對式A1-A3-Y-A4-A2(IXa)之化合物,其中Y為式或之基團。在該實施例中,A1-A3-及A4-A2-為下式之基團:i)
或(R3及R4可不同,但較佳相同且為H或C1-C25烷基;R201為C1-C38烷基);
ii)或(R3及R4可不同,但較佳相同且為H或C1-C25烷基;R201為C1-C38烷基);iii)(R3及R3'可不同,但較佳相同且為H或C1-C25烷基;R4及R4'可不同,但較佳相同且為H或C1-C25烷基)。
特定較佳式IX化合物之實例如下所示:
及,其中R3、R3'、R4及R4'彼此獨立地為氫或C1-C25烷基;且R201為C1-C38烷基。R3、R3'、R4及R4'較佳為氫。
化合物A-1、A-2、A-5及A-11最佳。
A1-A3-Y-A3-A1(IXa)可藉由使式A1-A3-X16之化合物與式X16'-Y-X16'之化合物反應來製備。X16'為-B(OH)2、-B(OH)3 -、-BF3、-
B(OY1)2、或且X16為鹵素,諸如Br或I。
鈴木反應通常在約0℃至180℃下在諸如甲苯、二甲苯之芳族烴溶劑中進行。亦可單獨或與芳族烴混合使用其他溶劑,諸如二甲基甲醯胺、二噁烷、二甲氧基乙烷及四氫呋喃。使用水性鹼,較佳碳酸鈉或碳酸氫鈉、磷酸鉀、碳酸鉀或碳酸氫鉀作為酸、酸鹽之活化劑且作為HBr清除劑。縮合反應可耗時0.2至100小時。諸如氫氧化四烷基銨之有機鹼及諸如TBAB之相轉移催化劑可促進硼之活性(參見例如Leadbeater & Marco;Angew.Chem.Int.Ed.Eng.42(2003)1407及其中所引用之參考文獻)。反應條件之其他變化由T.I.Wallow及B.M.Novak在J.Org.Chem.59(1994)5034-5037中;及M.Remmers,M.Schulze及G.Wegner在Macromol.Rapid Commun.17(1996)239-252中給出。
在以上鈴木偶合反應中,鹵化反應搭配物上之鹵素X16可經X16'部分置換且同時其他反應搭配物之X16'部分經X16置換。
相應二酮基吡咯并吡咯中間物之合成例如描述於R.A.J.Janssen等人,Macromol.Chem.Phys.2011,212,515-520、US2010/0326225及EP11179840.1中。
因此,本發明亦關於一種包含式VIII或IX之化合物之有機半導體材料、層或組分,且係關於一種包含式VIII或IX之化合物及/或有機半導體材料、層或組分之半導體裝置。
半導體裝置較佳為有機光伏打(PV)裝置(太陽能電池)、光電二極體或有機場效應電晶體。OFET裝置之結構及組分在上文中已更詳細描述。
因此,本發明提供包含式VIII或IX之化合物之有機光伏打(PV)裝
置(太陽能電池)。
有機光伏打裝置(太陽能電池)之結構例如描述於C.Deibel等人,Rep.Prog.Phys.73(2010)096401及Christoph Brabec,Energy Environ.Sci 2.(2009)347-303中。
PV裝置按以下次序包含:(a)陰極(電極),(b)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(c)光活性層,(d)視情況存在之平滑層,(e)陽極(電極),(f)基板。
光活性層包含式VIII或IX之化合物。光活性層較佳由式VIII或IX之化合物作為電子供體及如富勒烯、尤其官能化富勒烯PCBM之受體材料作為電子受體來製成。如上所述,光活性層亦可含有聚合黏合劑。式VIII或IX之小分子與聚合黏合劑之比率可自5%至95%變動。聚合黏合劑較佳為半結晶聚合物,諸如聚苯乙烯(PS)、高密度聚乙烯(HDPE)、聚丙烯(PP)及聚甲基丙烯酸甲酯(PMMA)。
適用於本發明之富勒烯可具有寬範圍之尺寸(每個分子之碳原子數)。如本文所用之術語富勒烯包括純碳之各種籠樣分子,包括巴克敏斯特富勒烯(C60)及相關「球形」富勒烯以及碳奈米管。富勒烯可選自在例如C20-C1000範圍內之此項技術中已知之彼等富勒烯。富勒烯較佳係選自C60至C96之範圍內。富勒烯最佳為C60或C70,諸如[60]PCBM或[70]PCBM。亦容許利用經化學改質之富勒烯,其限制條件為經改質富勒烯保留受體型及電子遷移率特徵。受體材料亦可為選自由諸如以下之其他式VIII或IX之化合物或任何半導體聚合物組成之群的材料:式I之聚合物(其限制條件為聚合物保留受體型及電子遷移率特
徵)、有機小分子、碳奈米管、無機粒子(量子點、量子桿、量子三腳架、TiO2、ZnO等)。
光活性層由式VIII或IX之化合物作為電子供體及富勒烯、尤其官能化富勒烯PCBM作為電子受體製成。此等兩種組分與溶劑混合且以溶液形式藉由例如旋塗方法、滴落鑄造方法、朗繆爾-布羅吉(「LB」)方法、噴墨印刷方法及滴淋方法塗覆於平滑層上。亦可使用刮漿板或印刷方法塗佈具有該類光活性層之更大表面。替代典型之甲苯,較佳使用諸如氯苯之分散劑作為溶劑。在此等方法中,鑒於易於操作及成本,真空沈積方法、旋塗方法、噴墨印刷方法及鑄造方法尤其較佳。
在藉由使用旋塗方法、鑄造方法及噴墨印刷方法形成層之情況下,塗佈可使用藉由將組合物溶解或分散於適當有機溶劑(諸如苯、甲苯、二甲苯、四氫呋喃、甲基四氫呋喃、N,N-二甲基甲醯胺、丙酮、乙腈、苯甲醚、二氯甲烷、二甲亞碸、氯苯、1,2-二氯苯及其混合物)中製備之濃度為0.01至90重量%之溶液及/或分散液進行。
光伏打(PV)裝置亦可由多個經加工彼此疊置之接面太陽能電池組成,以吸收更多太陽光譜。該等結構例如描述於App.Phys.Let.90,143512(2007),Adv.Funct.Mater.16,1897-1903(2006)及WO2004/112161中。
所謂『串連太陽電池』按此次序包含:(a)陰極(電極),(b)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(c)光活性層,(d)視情況存在之平滑層,(e)中間電極(諸如Au、Al、ZnO、TiO2等)(f)視情況存在之額外電極以匹配能階,
(g)視情況存在之過渡層,諸如鹼金屬鹵化物,尤其氟化鋰,(h)光活性層,(i)視情況存在之平滑層,(j)陽極(電極),(k)基板。
PV裝置亦可加工於纖維上,如例如US20070079867及US20060013549中所述。
由於包含式VIII或IX之化合物之材料或薄膜具有極佳自組織特性,故其亦可單獨或連同其他材料一起用於或作為比對層用於LCD或OLED裝置中,如例如US2003/0021913中所述。
本發明之OFET裝置較佳包含:-源極電極,-汲極電極,-閘極電極,-半導體層,-一或多個閘極絕緣體層,及-視情況存在之基板,其中該半導體層包含式VIII或IX之化合物。
OFET裝置中之閘極、源極及汲極電極以及絕緣及半導體層可以任何次序排列,其限制條件為源極及汲極電極與閘極電極由絕緣層隔開,閘極電極與半導體層皆接觸絕緣層且源極電極與汲極電極皆接觸半導體層。
OFET較佳包含具有第一面及第二面之絕緣體、位於該絕緣體之第一面上之閘極電極、位於該絕緣體之第二面上的包含式VIII或IX之化合物之層及位於該化合物層上之汲極電極及源極電極。
以下實例僅出於說明之目的而納入且不限制申請專利範圍之範
疇。除非另外說明,否則所有份數及百分比均以重量計。
重量平均分子量(Mw)及多分散性(Mw/Mn=PD)藉由高溫凝膠滲透層析(HT-GPC)測定[裝置:GPC PL 220,來自Agilent Technologies(Santa Clara,CA,USA),由折射率(RI)產生響應,層析條件:管柱:3個來自Agilent Technologies(Santa Clara,CA,USA)之「PLgel Mixed B」管柱;平均粒度為10μm(尺寸300×7.5mm I.D.),移動相:1,2,4-三氯苯(對於GPC而言,AppliChem,Darmstadt,Germany),藉由丁基羥基甲苯(BHT,1g/l)穩定,層析溫度:150℃;移動相流速:1ml/min;溶質濃度:約1mg/ml;注射體積:200μl;偵測:RI,分子量校正程序:藉由使用含有12個跨越6,035,000 Da-162 Da範圍內,亦即PS 6,035,000、PS 3,053,000、PS 915,000、PS 483,000、PS 184,900、PS 60,450、PS 19,720、PS 8,450、PS 3,370、PS 1,260、PS 580、PS 162 Da之分子量的窄聚苯乙烯校正標準之來自Agilent Technologies(Santa Clara,CA,USA)之EasiVial校正套組進行相對校正。使用多項校正以計算分子量。
以下實例中給出之所有聚合物結構為經由所述聚合反應程序獲得之聚合物產物之理想化表述。若兩種以上組分彼此共聚合,則視聚合條件而定,聚合物中之次序可為交替的或無規的。
a)化合物100之合成描述於例如WO2009115413中。
將862mg(20.55mmol)氫氧化鋰單水合物於10ml水中之溶液添加至2.5g(6.85mmol)化合物100及5.46g(14.04mmol)氯化苄基(聯三苯)鏻於40ml二氯甲烷中之溶液中。在25℃下攪拌反應混合物4小時。分離有機相,用二氯甲烷萃取水相。經硫酸鎂乾燥合併之有機相且過濾。蒸餾出溶劑且接著藉由兩次連續管柱層析(溶離劑:依次為甲苯/環己烷1:10及甲苯/環己烷1:1)純化產物101。產率:52%(1.89g,白色粉末)。
1H NMR(400MHz,CDCl3):δ=7.75(s,1H),7.47-7.22(m,10H),6.86(s,1H),5.81(d,J=7.0Hz,1H),4.96(d,J=7.2Hz,1H),0.46(s,9H),0.30(s,9H)。
13C NMR(100MHz,CDCl3):δ=152.3,142.4,141.9,141.3,140.5,138.7,135.6,131.1,128.9(2C),128.7(2C),128.2(2C),128.1(2C),127.5,127.2,125.8(2C),125.2,116.2,94.1,58.4,-0.2(3C),-0.4(3C).GC/MS:(CI pos.):529.28(MH+)。
b)在先前用氮氣沖洗且裝備有冷凝器及氮氣起泡器之100mL燒瓶中引入化合物101(1.3g,2.46mmol)及四氫呋喃(THF,30mL)。接著添加氟化四丁基銨三水合物(1.71g,5.41mmol)於四氫呋喃(10mL)中之溶液且在室溫下攪拌混合物2小時。隨後添加水(100mL),且用二氯甲烷萃取產物。接著經硫酸鎂乾燥合併之有機相且過濾。蒸餾出溶劑且接著藉由管柱層析(溶離劑:環己烷/甲苯4:1)純化產物102。產
率:96%(910mg,白色粉末)。
1H NMR(400MHz,CDCl3):δ=7.60(1H,d,J=5.5Hz),7.44-7.24(12H,m),6.74(1H,d,J=5.5Hz),5.79(1H,d,J=7.5Hz),4.93(1H,d,J=7.5Hz);GC/MS:(CI pos.):385.16(MH+)。
c)將0.52g(2.29mmol)2,3-二氯-5,6-二氰基苯醌(DDQ)添加至0.8g(2.08mmol)化合物102於20ml氯苯中之溶液。在氮氣下回流反應混合物2小時,且接著冷卻至室溫。添加二氯甲烷且用碳酸氫鈉溶液洗滌反應混合物。用硫酸鎂乾燥有機相且過濾。經旋轉式蒸發器蒸發溶劑。接著藉由管柱層析(環己烷/甲苯4:1)純化粗產物得到呈白色粉末狀之產物103。產率:88%(702mg,白色粉末)。
1H NMR(400MHz,CDCl3):δ=7.88(1H,d,J=5.3Hz),7.70(2H,m),7.61-7.56(5H,m),7.53(1H,d,J=5.5Hz,1H),7.37-7.28(4H,m),6.97(1H,d,J=5.3Hz)。GC/MS:(CI pos.):383.21(MH+)。
d)在裝有冷凝器及氮氣起泡器之3頸燒瓶中引入化合物103(1.02g,2.67mmol)。用氮氣沖洗燒瓶且添加四氫呋喃(THF)(80mL)。接著冷卻使溶液冷卻至-78℃且逐滴添加正丁基鋰(2.67mL,6.67
mmol,2.5M溶液)。在-78℃下攪拌所得混合物1小時20分鐘。隨後在-78℃下添加2-異丙氧基-4,4,5,5-四甲基-1,3,2-二氧硼(1.49g,8.00mmol)。在-78℃下20分鐘之後,使混合物升溫至室溫且在室溫下攪拌2小時。接著,在0℃下添加水且用第三丁基-甲基-醚(100mL)及二氯甲烷(兩次,100mL)萃取產物。經無水硫酸鈉乾燥合併之有機部分,過濾且經旋轉式蒸發器濃縮。粗固體用熱乙腈濕磨且冷卻至0℃。過濾白色固體(產物104)且真空乾燥。產率:72%(1.21g,白色粉末)。
1H-NMR(400.1MHz,CDCl3):δ=8.40(1H,s),7.62-7.54(7H,m),7.52(1H,s),7.32-7.26(3H,m),1.43(12H,s),1.33(12H,s)。13C NMR(100MHz,CDCl3):δ=149.1,147.2,135.9,134.4,133.6,132.4,131.8,130.8,130.4(2C),130.3,129.2(2C),128.4(2C),128.2,127.7,126.2(2C),125.7,121.4,119.1,84.6(2C),84.3(2C),24.9(4C),24.7(4C)。
e)3,6-雙(5-溴噻吩-2-基)-2,5-雙(2-己基癸基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮107之合成例如描述於WO2008/000664及Y.Geerts;Tetrahedron 66(2010)1837-1845中。在裝有冷凝器、機械攪拌器、氮氣起泡器及溫度計之燒瓶中引入步驟d)之雙酸酯104(400mg,0.63
mmol)及3,6-雙(5-溴噻吩-2-基)-2,5-雙(2-己基癸基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮107(545mg,0.60mmol)。用氮氣沖洗燒瓶且藉由注射器添加無水THF(30mL)。將所得紅色溶液加熱至60℃且添加乙酸鈀(II)(4.0mg,0.018mmol)及2-(二第三丁基膦基)-1-苯基吡咯(20.7mg,0.072mmol)於10mL THF中之溶液。在回流溫度下攪拌所得混合物5分鐘。隨後在60℃下一次性添加細碎氫氧化鋰單水合物(159mg,3.78mmol)且在回流溫度下攪拌4小時。將反應混合物傾入乙醇(300mL)中且經布赫納漏斗(Büchner funnel)過濾沈澱物。接著用200mL乙醇及200mL去離子水洗滌固體。接著將過濾之固體置於含有150mL氯仿及150mL 3%氰化鈉水溶液之燒瓶中且在60℃下在用力攪拌下加熱隔夜。用100mL水洗滌有機相,且接著蒸發三分之二氯仿。添加乙醇以沈澱產物,經布赫納漏斗過濾,用300mL乙醇洗滌且在烘箱中乾燥。接著再次重複用氰化鈉處理。接著藉由首先用四氫呋喃(200mL,6小時)進行索司勒萃取(soxhlet extraction)純化乾燥之固體。捨棄可溶於四氫呋喃中之部分且接著使剩餘固體經歷用氯仿(200mL,7小時)進行索司勒萃取。濃縮綠色溶液,用乙醇沈澱產物,過濾且減壓乾燥得到聚合物P-1(598mg,產率88%)。高溫GPC:Mw=97700,Mn=46200,PD=2.11。
a)在裝有冷凝器之燒瓶中引入化合物105(7.00g,8.05mmol)、
碘化鈉(4.83g,32.2mmol)及碘化亞銅(153mg,0.81mmol)。用氮氣(3×真空/氮氣)沖洗燒瓶且依序添加1,4-二噁烷(175mL)、反-N,N-二甲基環己烷-1,2-二胺(229mg,1.61mmol)。接著在回流下攪拌混合物隔夜。隨後將混合物傾入350mL水中。添加350mL 1M NaOH水溶液,且用二氯甲烷萃取產物。經硫酸鈉乾燥合併之有機相且過濾。經旋轉式蒸發器移除溶劑。分析展示產物與起始材料之不可分離之混合物。接著使粗產物經歷類似反應條件若干次直至轉化率為>97%。接著藉由管柱層析及於異丙醇中再結晶純化粗產物得到呈紅色固體狀之化合物106。
1H-NMR(400.1MHz,CDCl3):δ=8.89(2H,d,J=8.5Hz),7.38(2H,dd,J=8.5,1.8Hz),7.09(2H,d,J=1.8Hz),3.60(4H,d,J=7.2Hz),1.87(2H,m),1.38-1.20(48H,m),0.90-0.83(12H,m);13C NMR(100MHz,CDCl3):δ=167.9(2C),145.8(2C),132.9(2C),131.3(2C),130.9(2C),121.0(2C),117.2(2C),99.0(2C),44.6(2C),36.1(2C),31.9(2C),31.8(2C),31.5(4C),30.0(2C),29.7(2C),29.6(2C),29.3(2C),26.4(2C),26.3(2C),22.7(2C),22.6(2C),14.1(4C)
b)在裝有冷凝器、機械攪拌器、氮氣起泡器及溫度計之燒瓶中引入雙酸酯104(466mg,0.73mmol)及(3E)-1-(2-己基癸基)-3-[1-(2-己基癸基)-6-碘-2-側氧基-吲哚啉-3-亞基]-6-碘-吲哚啉-2-酮106(674mg,0.70mmol)。用氮氣沖洗燒瓶且藉由注射器添加無水THF(40mL)。將所得紅色溶液加熱至60℃且添加乙酸鈀(II)(4.7mg,0.021mmol)及2-(二第三丁基膦基)-1-苯基吡咯(24.1mg,0.084mmol)於10mL THF中之溶液。在回流溫度下攪拌所得混合物5分鐘。隨後在60℃下一次性添加細碎氫氧化鋰單水合物(185mg,4.41mmol)且在回流溫度下攪拌5小時。將反應混合物傾入乙醇(400mL)中且經布赫納漏斗過濾沈澱物。接著用200mL乙醇及200mL去離子水洗滌固體。接著將過濾之固體置於含有150mL氯仿及150mL 3%氰化鈉水溶液之燒瓶中且在55℃下在用力攪拌下加熱隔夜。用100mL水洗滌有機相三次,且接著蒸發氯仿。添加乙醇以沈澱產物,經布赫納漏斗過濾,用200mL水及50mL乙醇洗滌且在烘箱中乾燥。接著再次重複用氰化鈉處理。接著藉由首先用丙酮(200mL,2小時),且接著用第三丁基-甲基-醚(200mL,5h)進行索司勒萃取純化乾燥之固體。捨棄可溶於丙酮及第三丁基-甲基-醚中之部分且接著使剩餘固體經歷用THF(200mL,5小時)進行索司勒萃取。濃縮溶液,用乙醇沈澱產物,過濾且減壓乾燥得到聚合物P-2(659mg,產率86%)。高溫GPC:Mw=24600,Mn=15500,PD=1.58。
3,6-雙(5-溴噻吩-2-基)-2,5-雙(2-丁基辛基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮108之合成例如描述於WO2011/144566中。
在裝有冷凝器、機械攪拌器、氮氣起泡器及溫度計之燒瓶中引入化合物104(400mg,0.63mmol)及3,6-雙(5-溴噻吩-2-基)-2,5-雙(2-丁基辛基)吡咯并[3,4-c]吡咯-1,4(2H,5H)-二酮108(458mg,0.60mmol)。用氮氣沖洗燒瓶且藉由注射器添加無水THF(30mL)。將所得紅色溶液加熱至60℃且添加乙酸鈀(II)(4.0mg,0.018mmol)及2-(二第三丁基膦基)-1-苯基吡咯(20.7mg,0.072mmol)於10mL THF中之溶液。在回流溫度下攪拌所得混合物5分鐘。隨後在60℃下一次性添加細碎氫氧化鋰單水合物(159mg,3.78mmol)且在回流溫度下攪拌該混合物4小時。將反應混合物傾入乙醇(300mL)中且經布赫納漏斗過濾沈澱物。接著用200mL乙醇及200mL去離子水洗滌固體。接著將過濾之固體置於含有150mL氯仿及150mL 3%氰化鈉水溶液之燒瓶中且在60℃下在用力攪拌下加熱隔夜。用水洗滌有機相,且接著蒸發三分之二氯仿。添加乙醇以沈澱產物,經布赫納漏斗過濾,用300mL乙醇洗滌且在烘箱中乾燥。接著再次重複用氰化鈉處理。接著藉由索司勒萃取純化乾燥之固體。丟棄可溶於丙酮、第三丁基-甲基-醚及環
己烷中之部分。接著用四氫呋喃執行索司勒萃取,且濃縮綠色溶液,用乙醇沈澱產物,過濾且減壓乾燥得到聚合物P-3(510mg,產率86%)。高溫GPC:Mw=91400,Mn=33100,PD=2.76。
半導體聚合物之光伏打應用:
太陽能電池具有以下結構:Al電極/LiF層/有機層,包括本發明化合物/[聚(3,4-伸乙二氧基-噻吩)(PEDOT)/聚(苯乙烯磺酸)(PSS)]/ITO電極/玻璃基板。藉由在玻璃基板上之預先圖案化之ITO上旋塗PEDOT-PSS層來製備太陽能電池。接著旋塗半導體聚合物(1重量%):[70]PCBM(經取代之C70富勒烯)之1:2混合物(有機層)。LiF及Al在高真空下穿過遮蔽罩昇華。
太陽能電池效能
用具有歐司朗氙短弧(Osram Xenon Short Arc)XBO 450W燈之自製太陽光模擬器量測太陽能電池。接著,以外部量子效率(EQE)曲線評估AM1.5條件下之電流。
半導體聚合物之OPV效能示於下表中:
半導體聚合物之OFET應用:
半導體薄膜沈積:
藉由利用丙酮及異丙醇洗滌之標準清洗,隨後氧電漿處理30分鐘來製備矽晶圓(Si n- -(425±40μm)),其具有230nm厚SiO2介電質及圖案化氧化銦錫(15nm)/金(30nm)接點(L=20、10、5、2.5μm,W=
0.01m;Fraunhofer IPMS(Dresden))。在手套箱中轉移基板。藉由將基板置於辛基三氯矽烷(OTS)於三氯乙烯中之50mM溶液中歷時1小時而在介電質表面上生長辛基三氯矽烷(OTS)單層。單層生長之後,用甲苯洗滌基板以移除物理吸附之矽烷。在80℃下將半導體溶解於適當溶劑中以達到0.75重量%之濃度且以1500rpm於基板上旋塗60秒。
OFET量測:在Agilent 4155C半導體參數分析器上量測OFET轉移及輸出特徵。裝置在手套箱中在150℃下退火15分鐘,之後在手套箱中在氮氣氛圍下在室溫下進行量測。在p型電晶體中,對於轉移表徵而言,在等於-3及-30V之汲極電壓(Vd)下,閘極電壓(Vg)為10至-30V。對於輸出表徵而言,在Vg=0、-10、-20、-30V下,Vd為0至-30V。
Claims (11)
- 一種聚合物,其包含式之重複單元,其中R1 及R2彼此獨立地為式、、或之基團,其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基、C1-C18烷基或雜有-O-之C1-C18烷基;或R1與R2一起形成基團;及R601及R602彼此獨立地為氫或C1-C25烷基。
- 如請求項1之聚合物,其中該聚合物為式之聚合物或包含式及之重複單元之聚合物,其中n在4至1000之範圍內,A為式(I)之重複單元,及-COM1-為重複單元,其中k為0、1、2或3;l為1、2或3;r為0、1、2或3;z為0、1、2或3;Ar4、Ar5、Ar6及Ar7彼此獨立地為下式之基團:
- 如請求項1之聚合物,其包含式及之(重複)單元,其中A為式(I)之重複單元,及 -COM1-為重複單元、、
- 如請求項2之聚合物,其中A為式之重複單元,其中 R1及R2彼此獨立地為式、、或之基團,其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基;C1-C18烷基;或雜有-O-之C1-C18烷基,或R1與R2一起形成基團;R601及R602可相同或不同且係選自C1-C25烷基或氫;及 為下式之基團:、
- 如請求項3之聚合物,其為下式之聚合物:
- 一種化合物,其係選自由下列各式所組成之群:A1-Y-A3-Y15-A2(VIIIa)、A1-Y-A3-Y15-A4-Y16-A2(VIIIb)或A1-Y-A3-Y15-A4-Y16-A5-Y17-A2(VIIIc)、A1-A3-Y-A4-A2(IXa)、A1-A3-Y-A4-Y15-A5-A2(IXb)及A1-A3-Y-A4-Y15-A5-Y17-A5'-A2(IXc),其中Y、Y15、Y16及Y17彼此獨立地為式之基 團,其中R1及R2彼此獨立地為式、、或之基團,其中R400、R401、R402、R403、R404及R405彼此獨立地為H、CN、F、CF3、C1-C18烷氧基、C1-C18烷基或雜有-O-之C1-C18烷基;或R1與R2一起形成基團;及R601及R602彼此獨立地為氫或C1-C25烷基,A1及A2彼此獨立地為下式之基團
- 一種半導體材料,其包含如請求項1至5中任一項之聚合物及/或如請求項6之化合物。
- 一種電子裝置,其包含如請求項1至5中任一項之聚合物、如請求項6之化合物及/或如請求項7之半導體材料。
- 如請求項8之電子裝置,其為有機發光二極體、有機光伏打裝 置、光電二極體或有機場效應電晶體。
- 一種製備電子裝置之方法,該方法包含將如請求項1至5中任一項之聚合物及/或如請求項6之化合物於有機溶劑中之溶液及/或分散液塗覆於適當基板上且移除該溶劑;或該方法包含蒸發如請求項6之化合物。
- 一種如請求項1至5中任一項之聚合物、如請求項6之化合物及/或如請求項7之半導體材料之用途,其係用於有機發光二極體、光伏打裝置、光電二極體或有機場效應電晶體。
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