TWI594802B - Gas supply head and substrate processing apparatus - Google Patents
Gas supply head and substrate processing apparatus Download PDFInfo
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- TWI594802B TWI594802B TW102101106A TW102101106A TWI594802B TW I594802 B TWI594802 B TW I594802B TW 102101106 A TW102101106 A TW 102101106A TW 102101106 A TW102101106 A TW 102101106A TW I594802 B TWI594802 B TW I594802B
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- 239000000758 substrate Substances 0.000 title claims description 46
- 239000007789 gas Substances 0.000 claims description 595
- 238000009792 diffusion process Methods 0.000 claims description 148
- 239000011261 inert gas Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 22
- 238000007599 discharging Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 101100298412 Arabidopsis thaliana PCMP-H73 gene Proteins 0.000 description 5
- 101100156522 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS15 gene Proteins 0.000 description 5
- 101150096366 pep7 gene Proteins 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 101100102805 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS36 gene Proteins 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
該本發明係有關於氣體供給頭及基板處理裝置。 The present invention relates to a gas supply head and a substrate processing apparatus.
在ALD或MO-CVD等之成膜裝置中，交互供給前驅物和例如氧化劑，為了形成薄膜使用氣體供給頭(氣體噴嘴)。ALD或MO-CVD等所使用之氣體供給頭為了不會互相混合不同的氣體種類而供給至基板，具備有對應於各個氣體之個別的氣體擴散室和氣體吐出孔。 In a film forming apparatus such as ALD or MO-CVD, a precursor and an oxidizing agent are alternately supplied, and a gas supply head (gas nozzle) is used to form a film. The gas supply head used for ALD or MO-CVD or the like is supplied to the substrate so as not to mix different gas types, and includes individual gas diffusion chambers and gas discharge holes corresponding to the respective gases.
氣體供給頭之以往例記載於例如專利文獻1~3。 A conventional example of the gas supply head is described in, for example, Patent Documents 1 to 3.
〔專利文獻1〕日本特開2000-12471號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-12471
〔專利文獻2〕日本特開昭62-149881號公報 [Patent Document 2] Japanese Patent Laid-Open No. 62-149881
〔專利文獻3〕日本特開2003-305350號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2003-305350
但是，於各通過不同之氣體擴散室而從個別的氣體吐出孔交互供給不同的氣體之時，例如當氣體擴散室之內部不充分被沖洗時，則在非意圖之區域，例如在氣體吐出孔之附近的區域，產生不需要之堆積物。 However, when different gases are alternately supplied from the individual gas discharge holes through the different gas diffusion chambers, for example, when the inside of the gas diffusion chamber is not sufficiently flushed, in an unintended region, for example, a gas discharge hole. In the vicinity of the area, unwanted deposits are produced.
例如，在各自交互供給當作前驅物之三甲基鋁((CH3)3Al：TMA)氣體，當作氧化劑之水蒸氣(H2O)氣體的氧化鋁(Al2O3)成膜製程中，例如在氣體吐出孔之附近之區域堆積不需要之氧化鋁膜。 For example, a film of aluminum oxide (Al 2 O 3 ) which is a precursor of a trimethylaluminum ((CH 3 ) 3 Al:TMA) gas as an oxidant and a water vapor (H 2 O) gas as an oxidant is alternately supplied. In the process, for example, an unnecessary aluminum oxide film is deposited in a region in the vicinity of the gas discharge hole.
該發明係提供可以充分地沖洗氣體擴散室之內部，並且可以抑制在非意圖之區域產生不需要之堆積物之情形的氣體供給頭及使用其氣體供給頭之基板處理裝置。 The present invention provides a gas supply head which can sufficiently flush the inside of the gas diffusion chamber and which can prevent unnecessary deposits from being generated in an unintended region, and a substrate processing apparatus using the gas supply head.
與該發明之第1態樣有關之氣體供給頭係對進行基板處理之處理空間供給氣體的氣體供給頭：具備第1氣體擴散室，其係由直線狀之筒狀空間所構成；第1複數氣體吐出孔，其係對應於該第1氣體擴散室而被設置，構成列狀；第1氣體供給口，其係被設置在上述第1氣體擴散室之一端，連接於對上述第1氣體擴散室內供給第1氣體的第1氣體供給系統；及第1氣體排氣口，其係被設置在上述第1氣體擴散室之另一端，連接於從上述第1氣 體擴散室內排出上述第1氣體的第1氣體排氣系統。 A gas supply head according to a first aspect of the present invention is a gas supply head that supplies a gas to a processing space for performing substrate processing, and includes a first gas diffusion chamber, which is composed of a linear cylindrical space; a gas discharge hole that is provided in a row shape corresponding to the first gas diffusion chamber, and a first gas supply port that is provided at one end of the first gas diffusion chamber and that is connected to the first gas diffusion a first gas supply system that supplies a first gas in the room; and a first gas exhaust port that is provided at the other end of the first gas diffusion chamber and that is connected to the first gas The first gas exhaust system that discharges the first gas in the body diffusion chamber.
與該發明之第2態樣有關之氣體供給頭係對至少藉由第1氣體和第2氣體進行基板處理之處理空間，供給上述第1氣體及上述第2氣體的氣體供給頭，具備：互相並列配置之第1氣體擴散室、第2氣體擴散室、第3氣體擴散室及第4氣體擴散室；第1氣體供給系統，其係被連接於上述第1、第2氣體擴散室之各個的相反側之一端，對上述第1、第2氣體擴散室供給上述第1氣體；第1氣體排氣系統，其係被連接於上述第1、第2氣體擴散室之各個的相反側之另一端，從上述第1、第2氣體擴散室排出上述第1氣體；第2氣體供給系統，其係被連接於上述第3、第4氣體擴散室之各個的相反側之一端，對上述第3、第4氣體擴散室供給上述第2氣體；第2氣體排氣系統，其係被連接於上述第3、第4氣體擴散室之各個的相反側之另一端，從上述第3、第4氣體擴散室排出上述第2氣體；對應於上述第1氣體擴散室而被設置之第1複數氣體吐出孔、對應於上述第2氣體擴散室而被設置之第2複數氣體吐出孔、對應於上述第3氣體擴散室而被設置之第3複數氣體吐出孔及對應於上述第4氣體擴散室而被設置之第4複數氣體吐出孔，上述第1、第2、第3、第4複數氣體吐出孔之開口被設置在相同面上。 The gas supply head according to the second aspect of the present invention is a gas supply head that supplies the first gas and the second gas to a processing space in which at least the first gas and the second gas are subjected to substrate processing, and includes: a first gas diffusion chamber, a second gas diffusion chamber, a third gas diffusion chamber, and a fourth gas diffusion chamber arranged in parallel; and a first gas supply system connected to each of the first and second gas diffusion chambers One end of the opposite side, the first gas is supplied to the first and second gas diffusion chambers; and the first gas exhaust system is connected to the other end of the opposite side of each of the first and second gas diffusion chambers The first gas is discharged from the first and second gas diffusion chambers, and the second gas supply system is connected to one of the opposite ends of the third and fourth gas diffusion chambers, and the third The fourth gas diffusion chamber supplies the second gas; the second gas exhaust system is connected to the other end of the third and fourth gas diffusion chambers opposite to each other, and diffuses from the third and fourth gases The chamber discharges the second gas; corresponding to the above a first plurality of gas discharge holes provided in the gas diffusion chamber, a second plurality of gas discharge holes provided corresponding to the second gas diffusion chamber, and a third plurality of gases provided corresponding to the third gas diffusion chamber The discharge hole and the fourth plurality of gas discharge holes provided corresponding to the fourth gas diffusion chamber are provided on the same surface as the openings of the first, second, third, and fourth plurality of gas discharge holes.
與該發明之第3態樣有關之基板處理裝置係具備有氣體供給頭之基板處理裝置，該氣體供給頭係對至少藉由第1氣體和第2氣體進行基板處理之處理空間，供 給上述第1氣體及上述第2氣體，具備：處理室，其係用以收容上述基板，在上述基板之周圍形成進行上述基板之處理的處理空間；及氣體供給頭，其係被配置在上述處理室內，對上述處理空間供給上述第1氣體及上述第2氣體，上述氣體供給頭使用與第2態樣有關之氣體供給頭。 A substrate processing apparatus according to a third aspect of the invention includes a substrate processing apparatus including a gas supply head that supplies a processing space for performing substrate processing by at least a first gas and a second gas. The first gas and the second gas are provided with a processing chamber for accommodating the substrate, a processing space for performing processing of the substrate around the substrate, and a gas supply head disposed above In the processing chamber, the first gas and the second gas are supplied to the processing space, and the gas supply head uses a gas supply head according to the second aspect.
若藉由該發明時，因氣體擴散室為直線狀之筒狀空間，故可以提供由於壁面之沖洗性高，故可以充分地沖洗氣體擴散室之內部，並且可以抑制在非意圖之區域產生不需要之堆積物之情形的氣體供給頭及使用該氣體供給頭之基板處理裝置。 According to the invention, since the gas diffusion chamber has a linear cylindrical space, it is possible to provide a high flushing property of the wall surface, so that the inside of the gas diffusion chamber can be sufficiently washed, and generation of non-intentional regions can be suppressed. A gas supply head in the case of a required deposit and a substrate processing apparatus using the gas supply head.
G‧‧‧被處理體 G‧‧‧Processed body
101‧‧‧氣體擴散室 101‧‧‧ gas diffusion chamber
102‧‧‧氣體吐出孔 102‧‧‧ gas discharge hole
103‧‧‧氣體供給口 103‧‧‧ gas supply port
104‧‧‧氣體排氣口 104‧‧‧ gas vents
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
2‧‧‧處理空間 2‧‧‧Processing space
3‧‧‧處理室 3‧‧‧Processing room
4‧‧‧平台 4‧‧‧ platform
5‧‧‧蓋體 5‧‧‧ cover
6‧‧‧氣體供給頭 6‧‧‧ gas supply head
7‧‧‧排氣溝 7‧‧‧Exhaust ditch
8‧‧‧排氣裝置 8‧‧‧Exhaust device
9‧‧‧氣體供給系統 9‧‧‧ gas supply system
9a‧‧‧第1氣體供給系統 9a‧‧‧1st gas supply system
9b‧‧‧第2氣體供給系統 9b‧‧‧2nd gas supply system
10‧‧‧氣體排氣系統 10‧‧‧ gas exhaust system
11‧‧‧惰性氣體供給系統 11‧‧‧Inert gas supply system
12a‧‧‧製程控制器 12a‧‧‧Process Controller
12b‧‧‧使用者介面 12b‧‧‧User interface
12c‧‧‧記憶部 12c‧‧‧Memory Department
V1~V8‧‧‧閥 V1~V8‧‧‧ valve
VAC1~VAC4‧‧‧閥 VAC1~VAC4‧‧‧ valve
100‧‧‧本體 100‧‧‧ body
101、101a、101b、101a1、101a2、101b1、101b2‧‧‧氣體擴散室 101, 101a, 101b, 101a1, 101a2, 101b1, 101b2‧‧‧ gas diffusion chamber
102、102a、102b、102a1、102a2、102b1、102b2‧‧‧氣體吐出孔 102, 102a, 102b, 102a1, 102a2, 102b1, 102b2‧‧‧ gas discharge holes
第1圖為表示與該發明之一實施型態有關之基板處理裝置之一例的水平剖面圖。 Fig. 1 is a horizontal sectional view showing an example of a substrate processing apparatus according to an embodiment of the invention.
第2圖為沿著第1圖中之II-II線之剖面圖。 Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1.
第3圖(A)係表示與一實施型態有關之基板處理裝置所具備之氣體供給頭之一例的水平剖面圖，(B)為沿著(A)圖中之B-B線之剖面圖。 Fig. 3(A) is a horizontal cross-sectional view showing an example of a gas supply head provided in a substrate processing apparatus according to an embodiment, and Fig. 3(B) is a cross-sectional view taken along line B-B of the figure (A).
第4圖為透視與一實施型態有關之基板處理裝置所具備之氣體供給頭之一例的內部而表示的斜視圖。 Fig. 4 is a perspective view showing the inside of an example of a gas supply head provided in a substrate processing apparatus according to an embodiment.
第5圖為表示被吐出至處理空間內之氣體之流量分布 圖。 Figure 5 is a flow distribution showing the gas discharged into the processing space. Figure.
第6圖(A)~(C)為表示氣體吐出孔之配置的側面圖。 Fig. 6 (A) to (C) are side views showing the arrangement of the gas discharge holes.
第7圖為設置有4對8室的氣體擴散室之氣體供給頭之水平剖面圖。 Fig. 7 is a horizontal sectional view showing a gas supply head provided with a gas discharge chamber of four to eight chambers.
第8圖為表示氣體供給例之第1例的時序圖。 Fig. 8 is a timing chart showing a first example of a gas supply example.
第9圖(A)~(D)為在每個主要時序表示氣體擴散室之狀態的圖示。 Fig. 9 (A) to (D) are diagrams showing the state of the gas diffusion chamber at each main timing.
第10圖為表示氣體供給例之第2例的時序圖。 Fig. 10 is a timing chart showing a second example of the gas supply example.
第11圖(A)~(D)為在每個主要時序表示氣體擴散室之狀態的圖示。 Fig. 11 (A) to (D) are diagrams showing the state of the gas diffusion chamber at each main timing.
第12圖為表示氣體供給例之第3例的時序圖。 Fig. 12 is a timing chart showing a third example of the gas supply example.
第13圖(A)~(F)為在每個主要時序表示氣體擴散室之狀態的圖示。 Fig. 13 (A) to (F) are diagrams showing the state of the gas diffusion chamber at each main timing.
以下參照附件圖面，針對該發明之一實施型態予以說明。在該說明中，於整個參照圖面中，針對相同部份賦予相同參照符號。 Hereinafter, an embodiment of the invention will be described with reference to the attached drawings. In the description, the same reference numerals are given to the same parts throughout the drawings.
第1圖係表示與發明之一實施型態有關之基板處理裝置之一例的水平剖面圖，第2圖為沿著第1圖中之II-II線之剖面圖。在一實施型態中，使用在FPD製造或太陽電池模組中被使用之玻璃基板以作為被處理體之一例，就以基板處理裝置之一例而言，例示對玻璃基板施予 成膜處理之成膜裝置。 Fig. 1 is a horizontal cross-sectional view showing an example of a substrate processing apparatus according to an embodiment of the invention, and Fig. 2 is a cross-sectional view taken along line II-II in Fig. 1 . In one embodiment, a glass substrate used in an FPD manufacturing or a solar cell module is used as an example of a substrate to be processed, and an example of a substrate processing apparatus is used to exemplify a glass substrate. Film forming apparatus for film formation treatment.
如第1圖及第2圖所示般，基板處理裝置1具備形成對被處理體G進行處理之處理空間2的處理室3。處理室3包含載置被處理體G之平台4，和覆蓋被載置於平台4上之被處理體G之蓋體5。平台4及蓋體5被構成可對高度方向相對性移動。當將平台4和蓋體5從高度方向移開，例如使蓋體5上升，使蓋體5從平台4離開時，載置被設置在平台4之被處理體G之載置面露出至外部。依此，被處理體G可朝載置面上搬入、載置及搬出。並且，在第1圖及第2圖中，在載置面，省略使被處理體G上升下降之升降器的圖示。 As shown in FIGS. 1 and 2, the substrate processing apparatus 1 includes a processing chamber 3 that forms a processing space 2 for processing the object G. The processing chamber 3 includes a stage 4 on which the object G to be processed is placed, and a cover 5 that covers the object G to be placed on the stage 4. The platform 4 and the cover 5 are configured to be relatively movable in the height direction. When the stage 4 and the lid body 5 are removed from the height direction, for example, the lid body 5 is raised, and when the lid body 5 is separated from the stage 4, the mounting surface of the object G to be processed placed on the stage 4 is exposed to the outside. . Accordingly, the object to be processed G can be carried in, placed, and carried out on the placement surface. In addition, in the first drawing and the second drawing, the illustration of the lifter that raises and lowers the object to be processed G is omitted on the mounting surface.
相反地，在被處理體G被載置在載置面上之狀態下使蓋體5下降，並使蓋體5密接於平台4時，與外部隔絕而被密閉之處理空間2被形成在平台4和蓋體5之間。依此，可對處理空間2中之被處理體G進行處理。在本例中，雖然以蓋體5對平台4上升下降之例予以說明，但是亦可構成平台4對蓋體5上升下降，當然也可構成平台4及蓋體5之雙方上升下降。 On the other hand, when the target body G is placed on the mounting surface, the lid body 5 is lowered, and when the lid body 5 is in close contact with the stage 4, the processing space 2 sealed from the outside and sealed is formed on the platform. 4 and between the cover 5. Accordingly, the processed object G in the processing space 2 can be processed. In this example, the case where the lid 5 is raised and lowered by the lid body 5 will be described. However, the lid body 5 may be formed to rise and fall with respect to the lid body 5, and of course, both the platform 4 and the lid body 5 may be formed to rise and fall.
在處理空間2之內部設置有構成對處理空間2供給用於處理之氣體的氣體供給頭6，和排氣溝7。排氣溝7被連接於排氣裝置8。排氣裝置8係對處理空間2之內部排氣。藉由排氣裝置8對處理空間2之內部進行排氣，進行處理空間2內之壓力之調節，或處理空間2內之氛圍之置換(沖洗)。 Inside the processing space 2, a gas supply head 6 constituting a gas for processing the processing space 2, and an exhaust groove 7 are provided. The exhaust groove 7 is connected to the exhaust device 8. The exhaust unit 8 is connected to the internal exhaust of the processing space 2. The inside of the processing space 2 is exhausted by the exhaust device 8, and the pressure in the processing space 2 is adjusted or the atmosphere in the processing space 2 is replaced (flushed).
在本例中，氣體供給頭6及排氣溝7為直線狀，並且直線狀之氣體供給頭6及排氣溝7係沿著互相相對之位置，例如具備4邊之矩形狀之平台4中之相對的兩邊而配置。然後，上述載置面係以被夾在直線狀之氣體供給頭6和直線狀之排氣溝7之間之方式而被設置。藉由在互相相對之位置配置直線狀之氣體供給頭6和直線狀之排氣溝7，並且以被夾在直線狀之氣體供給頭6和直線狀之排氣溝7之間之方式設置上述載置面，可以在被載置在載置面上之被處理體G之被處理面之上方，形成從氣體供給頭6朝向排氣溝7在一方向成為層流的氣流F。在如此之本例中，對被處理體G，藉由在一方向成為層流之氣體進行均勻的期待處理，在本例中為均勻的成膜處理。 In this example, the gas supply head 6 and the exhaust groove 7 are linear, and the linear gas supply head 6 and the exhaust groove 7 are located at positions facing each other, for example, in a rectangular platform 4 having four sides. Configured on opposite sides. Then, the mounting surface is provided so as to be sandwiched between the linear gas supply head 6 and the linear exhaust groove 7. The linear gas supply head 6 and the linear exhaust groove 7 are disposed at positions facing each other, and are disposed so as to be sandwiched between the linear gas supply head 6 and the linear exhaust groove 7. The placement surface can form a gas flow F that is laminar in one direction from the gas supply head 6 toward the exhaust groove 7 above the surface to be processed of the object G placed on the placement surface. In such a case as described above, the object G to be processed is uniformly subjected to a desired treatment by a gas which is laminar in one direction, and in this example, a uniform film formation process is performed.
本例之氣體供給頭6係連接氣體供給系統9和氣體排氣系統10。氣體供給系統9係對氣體供給頭6供給例如處理所使用之氣體。氣體排氣系統10係從氣體供給頭6排出被供給至氣體供給頭6之氣體。再者，如第1圖所示般，氣體供給頭6因應所需連接於惰性氣體供給系統11。惰性氣體供給系統11係對氣體供給頭6供給惰性氣體。惰性氣體可以使用於處理空間2內之氛圍或詳細如後述般被設置在氣體供給頭6內之氣體擴散室之置換(沖洗)，或者當作從氣體供給系統9被供給之氣體之稀釋氣體或載體氣體使用。 The gas supply head 6 of this example is connected to the gas supply system 9 and the gas exhaust system 10. The gas supply system 9 supplies, for example, a gas used for the treatment to the gas supply head 6. The gas exhaust system 10 discharges the gas supplied to the gas supply head 6 from the gas supply head 6. Further, as shown in Fig. 1, the gas supply head 6 is connected to the inert gas supply system 11 as needed. The inert gas supply system 11 supplies an inert gas to the gas supply head 6. The inert gas can be used for the atmosphere in the treatment space 2 or the replacement (flushing) of the gas diffusion chamber provided in the gas supply head 6 as described later, or as the dilution gas of the gas supplied from the gas supply system 9 or Carrier gas is used.
如此之基板處理裝置1之各部之控制藉由控制部12進行。控制部12具有例如由微處理器(電腦)所 構成之製程控制器12a。在製程控制器12a連接有由操作員為了管理處理裝置1進行指令之輸入操作等的鍵盤，或使處理裝置1之運轉狀況可視化而予以顯示之顯示器等所構成之使用者介面12b。製程控制器12a連接有記憶部12c。記憶部12c儲存有用以藉由製程控制器12a之控制實現在基板處理裝置1中被實行之各種處理的控制程式，或用以因應處理條件使基板處理裝置1之各部實行處理之處理方法。處理方法係被記憶於例如記憶部12c之中的記憶媒體。記憶媒體即使為硬碟或半導體記憶體亦可，即使為CD-ROM、DVD、快閃記憶體等之可搬運性者亦可。再者，處理方法即使例如經專用迴線而從其他裝置適當傳送亦可。處理方法係因應所需在來自使用者介面12b之指示等下從記憶部12c被讀出，藉由製程控制器12a實行依照所讀出之處理方法之處理，基板處理裝置1在製程控制器12a之控制下，實施期待之處理、控制。 Control of each unit of the substrate processing apparatus 1 is performed by the control unit 12. The control unit 12 has, for example, a microprocessor (computer) The process controller 12a is constructed. A user interface 12b including a keyboard for inputting an instruction by the operator to manage the processing device 1 or a display for visualizing the operation state of the processing device 1 is connected to the process controller 12a. The process controller 12a is connected to the memory unit 12c. The storage unit 12c stores a control program for realizing various processes executed in the substrate processing apparatus 1 by the control of the process controller 12a, or a processing method for causing each unit of the substrate processing apparatus 1 to perform processing in accordance with the processing conditions. The processing method is stored in, for example, a memory medium in the memory unit 12c. The memory medium can be a hard disk or a semiconductor memory, and can be carried by a CD-ROM, a DVD, a flash memory or the like. Furthermore, the processing method may be appropriately transmitted from another device, for example, via a dedicated return line. The processing method is read from the memory unit 12c in response to an instruction from the user interface 12b, and the process controller 12a performs processing according to the read processing method, and the substrate processing apparatus 1 is in the process controller 12a. Under the control of the implementation, the expected processing and control.
以下，針對本例之氣體供給頭6，更詳細予以說明。 Hereinafter, the gas supply head 6 of this example will be described in more detail.
第3圖(A)係表示與一實施型態有關之基板處理裝置所具備之氣體供給頭之一例的水平剖面圖，第3圖(B)為沿著第3圖(A)中之B-B線之剖面圖，第4圖為透視表示與一實施型態有關之基板處理裝置所具備之氣體供給頭之一例之內部的斜視圖。 Fig. 3(A) is a horizontal sectional view showing an example of a gas supply head provided in a substrate processing apparatus according to an embodiment, and Fig. 3(B) is a line BB along the third figure (A). Fig. 4 is a perspective view showing the inside of an example of a gas supply head provided in a substrate processing apparatus according to an embodiment.
如第3圖(A)、第3圖(B)及第4圖所示般，氣體供給頭6具備本體100，和被形成在本體100之 內部，由直線狀之筒狀空間所構成之氣體擴散室101，和對應於氣體擴散室101而被設置，構成列狀之複數氣體吐出孔102。複數氣體吐出孔102連通所對應之氣體擴散室101和氣體供給頭6面對的處理空間2之間。氣體擴散室101並非直線狀之筒狀空間之長軸方向對被處理體G呈垂直方向，而係對被處理體G平行配置。然後，沿著直線狀之筒狀空間之長軸方向列狀地並列配置之複數氣體吐出孔102，係對被處理體G之被處理面略平行地吐出氣體例如處理氣體或惰性氣體。 As shown in FIGS. 3(A), 3(B) and 4, the gas supply head 6 includes a body 100 and is formed in the body 100. Inside, the gas diffusion chamber 101 composed of a linear cylindrical space and the gas diffusion chamber 101 are provided to form a plurality of gas discharge holes 102 in a column shape. The plurality of gas discharge holes 102 communicate between the corresponding gas diffusion chamber 101 and the processing space 2 that the gas supply head 6 faces. The gas diffusion chamber 101 is not perpendicular to the long-axis direction of the cylindrical space, and is disposed in the vertical direction of the object G, and is disposed in parallel with the object G to be processed. Then, the plurality of gas discharge holes 102 arranged in parallel along the long axis direction of the linear cylindrical space are discharged with a gas such as a processing gas or an inert gas in a direction slightly parallel to the surface to be processed of the object G to be processed.
在屬於氣體擴散室101之終端部的一端，設置有氣體供給口103，同樣在屬於另一方之終端部之另一端設置有氣體排氣口104。氣體供給口103係連接於氣體供給系統9，氣體排氣口104係被連接於氣體排氣系統10。 A gas supply port 103 is provided at one end of the terminal portion belonging to the gas diffusion chamber 101, and a gas exhaust port 104 is provided at the other end of the other terminal portion. The gas supply port 103 is connected to the gas supply system 9, and the gas exhaust port 104 is connected to the gas exhaust system 10.
如此一來，與一實施型態有關之基板處理裝置1所具備之氣體供給頭6，係將氣體擴散室101設為直線狀之筒狀空間，並且藉由氣體由氣體擴散室101之終端部供給，使成為在氣體擴散室101之內部不產生氣體積存的構造。 In the gas supply head 6 provided in the substrate processing apparatus 1 according to the embodiment, the gas diffusion chamber 101 is a linear cylindrical space, and the gas is diffused from the end portion of the gas diffusion chamber 101. The supply is such that there is no structure in which gas is generated inside the gas diffusion chamber 101.
再者，藉由使氣體擴散室101之內部氣體從氣體擴散室101之另一方之終端部排氣，在氣體擴散室101內確立從氣體供給口103朝向氣體排氣口104之一方向之氣流F1，用於處理之氣體不會殘留在氣體擴散室101之內部，成為可以朝向氣體排氣口104排氣之構造。 Further, by exhausting the internal gas of the gas diffusion chamber 101 from the other end portion of the gas diffusion chamber 101, the gas flow from the gas supply port 103 toward one of the gas exhaust ports 104 is established in the gas diffusion chamber 101. F1, the gas for treatment does not remain inside the gas diffusion chamber 101, and is a structure that can be exhausted toward the gas exhaust port 104.
因此，若藉由第3圖(A)、第3圖(B)及第4圖所示之氣體供給頭6時，例如氣體擴散室101為直線狀之筒狀空間，即使其長軸方向對被處理體G水平配置，亦可充分沖洗氣體擴散室101之內部，可以取得可抑制由於殘留在氣體擴散室101之內部之處理氣體而在非意圖之區域產生不需要之堆積物之情形的優點。 Therefore, when the gas supply head 6 shown in Figs. 3(A), 3(B), and 4 is used, for example, the gas diffusion chamber 101 is a linear cylindrical space, even if the longitudinal direction thereof is opposite. The object to be processed G is horizontally disposed, and the inside of the gas diffusion chamber 101 can be sufficiently flushed, and the advantage of suppressing generation of unnecessary deposits in unintended areas due to the processing gas remaining inside the gas diffusion chamber 101 can be obtained. .
並且，在一實施型態中，對氣體供給頭6供給複數氣體，在本例中，供給第1氣體和第2氣體的2種類之氣體。因此，氣體供給頭6係具備第1氣體用之氣體擴散室101a和第2氣體用之氣體擴散室101b以當作氣體擴散室101。然後，即使針對氣體供給系統9，也具備有供給第1氣體之第1氣體供給系統9a，和供給第2氣體之第2氣體供給系統9b。此時，即使針對氣體排氣系統10，雖然無特別圖示，但以分別設置第1氣體排氣用之氣體排氣系統，和第2氣體排氣用之氣體排氣系統為佳。在排氣系統中，抑制無用之堆積物產生之故。 Further, in one embodiment, a plurality of gases are supplied to the gas supply head 6, and in this example, two types of gases of the first gas and the second gas are supplied. Therefore, the gas supply head 6 is provided with the gas diffusion chamber 101a for the first gas and the gas diffusion chamber 101b for the second gas as the gas diffusion chamber 101. Then, the gas supply system 9 is provided with a first gas supply system 9a that supplies a first gas and a second gas supply system 9b that supplies a second gas. In this case, the gas exhaust system 10 is preferably provided with a gas exhaust system for the first gas exhaust gas and a gas exhaust system for the second gas exhaust gas, unless otherwise specified. In the exhaust system, the use of unwanted deposits is suppressed.
第1氣體及第2氣體之具體性的一例若例示例如氧化鋁(Al2O3)成膜時，第1氣體則為前驅物之三甲基鋁((CH3)3Al：TMA)氣體，第2氣體則為氧化劑之水蒸氣(H2O)氣體。當然，第1氣體及第2氣體並不限定於TMA氣體、水蒸氣氣體，可以因應所形成之膜的種類而變更。再者，氣體並不限定於2種類，也可以因應所形成之膜的種類而變更成3種類以上。當然，氣體之種類即使為1種類亦可。 An example of the specificity of the first gas and the second gas is, for example, a case where alumina (Al 2 O 3 ) is formed, and the first gas is a precursor of trimethyl aluminum ((CH 3 ) 3 Al: TMA) gas. The second gas is a water vapor (H 2 O) gas of an oxidant. Of course, the first gas and the second gas are not limited to the TMA gas or the steam gas, and may be changed depending on the type of the film to be formed. In addition, the gas is not limited to two types, and may be changed to three or more types depending on the type of the film to be formed. Of course, the type of gas may be one type.
並且，在一實施型態中，按氣體之各種類具備偶數個氣體擴散室。在本例中，具備當作第1氣體用之氣體擴散室101a之兩個氣體擴散室101a1及101a2、當作第2氣體用之氣體擴散室101b之兩個氣體擴散室101b1及101b2。然後，使在氣體擴散室101a1內流動之第1氣體之方向，和在氣體擴散室101a2內流動之第1氣體之方向互相逆向。同樣，使在氣體擴散室101b1內流動之第2氣體之方向，和在氣體擴散室101b2內流動之第2氣體之方向互相逆向。 Further, in one embodiment, an even number of gas diffusion chambers are provided for each type of gas. In this example, two gas diffusion chambers 101a1 and 101a2 which are the gas diffusion chambers 101a for the first gas and two gas diffusion chambers 101b1 and 101b2 which are the gas diffusion chambers 101b for the second gas are provided. Then, the direction of the first gas flowing in the gas diffusion chamber 101a1 and the direction of the first gas flowing in the gas diffusion chamber 101a2 are reversed to each other. Similarly, the direction of the second gas flowing in the gas diffusion chamber 101b1 and the direction of the second gas flowing in the gas diffusion chamber 101b2 are opposite to each other.
如此一來，藉由在第1氣體用之氣體擴散室101a1及101a2、第2氣體用之氣體擴散室101b1及101b2互相逆向地各流入第1氣體及第2氣體，可以取得下述般之優點。 In this way, the gas diffusion chambers 101a1 and 101a2 for the first gas and the gas diffusion chambers 101b1 and 101b2 for the second gas flow into the first gas and the second gas in the opposite directions, whereby the following advantages can be obtained. .
第5圖為表示被吐出至處理空間2內之氣體之流量分布圖。第5圖所示之流量分布，係表示屬於直線狀之筒狀空間之氣體擴散室101(101a、101a2)成為在長軸方向長度超過1m的公尺等級之時。 Fig. 5 is a flow rate distribution diagram showing the gas discharged into the processing space 2. The flow rate distribution shown in Fig. 5 indicates that the gas diffusion chambers 101 (101a, 101a2) belonging to the linear cylindrical space have a length of more than 1 m in the longitudinal direction.
如第5圖所示般，氣體從氣體擴散室101a1、101a2之兩端互相逆向地被供給，朝向各個氣體擴散室101a1、101a2之另一端流動。於氣體供給頭6為大型且氣體擴散室之長軸方向之長度為公尺等級之時，氣體擴散室101a1、101a2內部之壓力坡度變大，從氣體吐出孔102吐出之流量朝向另一端緩緩地降低。 As shown in Fig. 5, gas is supplied from opposite ends of the gas diffusion chambers 101a1 and 101a2 to each other, and flows toward the other end of each of the gas diffusion chambers 101a1 and 101a2. When the length of the gas supply head 6 is large and the length of the gas diffusion chamber in the long axis direction is metric, the pressure gradient inside the gas diffusion chambers 101a1 and 101a2 is increased, and the flow rate discharged from the gas discharge hole 102 is gradually toward the other end. Reduced ground.
相對於如此之情形，第1實施型態具備之氣 體供給頭6係使在氣體擴散室101a1內流動之第1氣體之方向，和在氣體擴散室101a2內流動之第1氣體之方向互相逆向，從兩端交互供給相同氣體。因此，即使壓力坡度變大，也總結從雙方流入的流量，沿著氣體供給頭6之長軸方向可以取得均勻之流量分布。其結果，即使被處理體為公尺等級之大型被處理體，亦可以取得如能夠均勻處理，例如均勻之成膜處理的優點。 In contrast to such a situation, the first embodiment has a gas The body supply head 6 reverses the direction of the first gas flowing in the gas diffusion chamber 101a1 and the direction of the first gas flowing in the gas diffusion chamber 101a2, and supplies the same gas alternately from both ends. Therefore, even if the pressure gradient becomes large, the flow rate from both sides is summarized, and a uniform flow distribution can be obtained along the long axis direction of the gas supply head 6. As a result, even if the object to be processed is a large-sized object to be processed in a metric grade, it is possible to obtain an advantage of uniform processing such as uniform film formation.
再者，在上述一實施型態中，將複數氣體吐出孔102a1、102a2、102b1及102b2設置成各在氣體供給頭6之一個面(相同面)上開口。如此一來，藉由在同一面上設置複數氣體吐出孔102a1、102a2、102b1及102b2之開口，可以取得如容易形成從氣體供給頭6之一個面朝向排氣溝7在一方向成為層流之氣流F的優點。 Further, in the above-described embodiment, the plurality of gas discharge holes 102a1, 102a2, 102b1, and 102b2 are provided to be opened on one surface (the same surface) of the gas supply head 6. In this manner, by providing the openings of the plurality of gas discharge holes 102a1, 102a2, 102b1, and 102b2 on the same surface, it is possible to easily form a laminar flow from one surface of the gas supply head 6 toward the exhaust groove 7 in one direction. The advantage of airflow F.
並且，在上述一實施型態中，在同一列上交互配置第1氣體用之複數氣體吐出孔102a1、102a2之開口，在另一同一列上交互配置第2氣體用之複數氣體吐出孔102b1、102b2之開口，如第6圖(A)所示般，兩列並列配置氣體吐出孔102a1、102a2之開口之列和氣體吐出孔102b1、102b2之開口之列。藉由在同一列上交互配置第1氣體用之複數氣體吐出孔102a1、102a2之開口的優點，如同上述般，沿著氣體供給頭6之長軸方向容易取得均勻之流量分布。 Further, in the above-described embodiment, the openings of the plurality of gas discharge holes 102a1 and 102a2 for the first gas are alternately arranged in the same row, and the plurality of gas discharge holes 102b1 for the second gas are alternately arranged in the other column. In the opening of 102b2, as shown in Fig. 6(A), the rows of openings of the gas discharge holes 102a1, 102a2 and the openings of the gas discharge holes 102b1, 102b2 are arranged in parallel in two rows. By the advantage of alternately arranging the openings of the plurality of gas discharge holes 102a1 and 102a2 for the first gas in the same row, a uniform flow rate distribution is easily obtained along the long axis direction of the gas supply head 6 as described above.
再者，在上述一實施型態中，將氣體吐出孔102a1之開口和氣體吐出孔102a2之開口之配置間距設定 成“P”，以等間隔配置氣體吐出孔102a1之開口和氣體吐出孔102a2之開口。也與第2氣體用之複數氣體吐出孔102b1、102b2之開口相同在另外之同一列上交互配置，即使針對氣體吐出孔102b1之開口和氣體吐出孔102b2之開口的配置間距，同樣設定成“P”配置成等間隔。然後，在上述一實施型態中，將氣體吐出孔102a1、102a2之開口之列，和氣體吐出孔102b1、102b2之開口之列互相偏移“P/2”間距。依此，交互配置第1氣體用之氣體吐出孔102a(102a1、102a)之開口，和第2氣體用之氣體吐出孔102b(102b1、102b2)之開口，並且以“P/2”間距將氣體吐出孔102a1、102b1、102a2、102b2之開口配置成等間隔。 Furthermore, in the above-described embodiment, the arrangement pitch of the opening of the gas discharge hole 102a1 and the opening of the gas discharge hole 102a2 is set. In the "P", the opening of the gas discharge hole 102a1 and the opening of the gas discharge hole 102a2 are disposed at equal intervals. The arrangement of the openings of the gas discharge holes 102b1 and the openings of the gas discharge holes 102b2 is also set to "P" in the same column as the openings of the plurality of gas discharge holes 102b1, 102b2 for the second gas. ” Configured to be equally spaced. Then, in the above-described embodiment, the rows of the openings of the gas discharge holes 102a1, 102a2 and the rows of the gas discharge holes 102b1, 102b2 are shifted from each other by a "P/2" pitch. Accordingly, the openings of the gas discharge holes 102a (102a1, 102a) for the first gas and the openings of the gas discharge holes 102b (102b1, 102b2) for the second gas are alternately arranged, and the gas is separated by "P/2". The openings of the discharge holes 102a1, 102b1, 102a2, and 102b2 are arranged at equal intervals.
藉由將第2氣體用之氣體吐出孔102b1、102b2將互相配置在與第1氣體用之氣體吐出孔102a1、102a2不同之另外的同一列上的優點，係可以因應氣體之種類，在氣體吐出孔102a1、102a2、102b1、102b2之吐出部分，即是從氣體噴嘴分離之位置混合第1氣體和第2氣體。當可以在從與氣體噴嘴分離之位置混合第1氣體和第2氣體時，則可以取得下述優點，抑制在氣體供給頭6附近的第1、第2氣體之反應，且可以更理想地抑制在氣體供給頭6上產生不需要的堆積物。 The gas discharge holes 102b1 and 102b2 for the second gas are disposed in the same column different from the gas discharge holes 102a1 and 102a2 for the first gas, and can be discharged in the gas depending on the type of the gas. The discharge portions of the holes 102a1, 102a2, 102b1, and 102b2 are the first gas and the second gas mixed at a position separated from the gas nozzle. When the first gas and the second gas can be mixed from the position separated from the gas nozzle, the following advantages can be obtained, and the reaction between the first gas and the second gas in the vicinity of the gas supply head 6 can be suppressed, and the reaction can be more preferably suppressed. Unwanted deposits are produced on the gas supply head 6.
再者，藉由交互配置第1氣體用之氣體吐出孔102a(102a1、102a2)之開口，和第2氣體用之氣體吐出孔102b(102b1、102b2)之開口，並且以“P/2”間距配 置成等間隔的優點，係可以提升第1氣體和第2氣體之混合的均勻性。 Further, the openings of the gas discharge holes 102a (102a1, 102a2) for the first gas and the openings of the gas discharge holes 102b (102b1, 102b2) for the second gas are alternately arranged, and are spaced by "P/2". Match The advantage of being equally spaced is that the uniformity of mixing of the first gas and the second gas can be improved.
再者，於不需要在從氣體噴嘴分離之位置混合第1氣體和第2氣體之時，氣體吐出孔102a1、102a2、102b1、102b2之開口之配置並不限定於2列並列。例如，即使第6圖(B)所示般，將氣體吐出孔102a1、102a2、102b1、102b2之開口成1列單列亦可。 Further, when it is not necessary to mix the first gas and the second gas at the position separated from the gas nozzle, the arrangement of the openings of the gas discharge holes 102a1, 102a2, 102b1, and 102b2 is not limited to two rows. For example, even as shown in FIG. 6(B), the openings of the gas discharge holes 102a1, 102a2, 102b1, and 102b2 may be arranged in a single row.
並且，即使在將氣體吐出孔102a1、102a2、102b1、102b2之開口配置成1列單列之時，當交互配置第1氣體用之氣體吐出孔102a(102a1、102a2)之開口，和第2氣體用之氣體吐出孔102b(102b1、102b2)之開口，並且以“P/2”間距配置成等間隔時，可以取得提升第1氣體和第2氣體之混合均勻性的優點。 In addition, when the openings of the gas discharge holes 102a1, 102a2, 102b1, and 102b2 are arranged in a single row, the openings of the gas discharge holes 102a (102a1, 102a2) for the first gas are alternately arranged, and the second gas is used. When the openings of the gas discharge holes 102b (102b1, 102b2) are arranged at equal intervals at a "P/2" pitch, the advantage of improving the mixing uniformity of the first gas and the second gas can be obtained.
再者，於即使為相同氣體也必須以不同高度來區分列之時，則如第6圖(C)所示般，例如，即使將氣體吐出孔102a1之開口之列、氣體吐出孔102a2之開口之列、氣體吐出孔102b1之開口之列，及氣體吐出孔102b2之開口之列設成各別的列，配置成4列並列亦可。 Further, when it is necessary to distinguish the columns at different heights even if they are the same gas, as shown in Fig. 6(C), for example, even the openings of the gas discharge holes 102a1 and the openings of the gas discharge holes 102a2 are opened. The array of the openings of the gas discharge holes 102b1 and the openings of the gas discharge holes 102b2 are arranged in separate rows, and may be arranged in four rows.
在將氣體吐出孔102a1、102a2、102b1、102b2之開口配置成4列並列之時，使氣體吐出孔102a1、102a2之開口之列，氣體吐出孔102b1、102b2之開口之列互相偏移“P/4”。依此，第1氣體用之氣體吐出孔102a(102a1、102a2)之開口，和第2氣體用之氣體吐出孔102b(102b1、102b2)之開口被交互配置，並且可 以“P/4”間距之等間隔配置。藉由如此配置，與第6圖(A)、第6圖(B)所示之配置例相同，可以取得如可以提升第1氣體和第2氣體之混合均勻性之優點。 When the openings of the gas discharge holes 102a1, 102a2, 102b1, and 102b2 are arranged in four rows, the rows of the gas discharge holes 102a1 and 102a2 are opened, and the rows of the gas discharge holes 102b1 and 102b2 are shifted from each other. 4". Accordingly, the openings of the gas discharge holes 102a (102a1, 102a2) for the first gas and the openings of the gas discharge holes 102b (102b1, 102b2) for the second gas are alternately arranged, and They are arranged at equal intervals of "P/4" spacing. With such an arrangement, as in the arrangement example shown in FIGS. 6(A) and 6(B), it is possible to obtain an advantage that the mixing uniformity of the first gas and the second gas can be improved.
並且，即使在第6圖(A)~第6圖(C)中之任一者時，藉由各順序或交互配置氣體吐出孔102a1和102a2、氣體吐出孔102b1和102b2，可以取得沿著氣體供給頭6之長軸方向容易取得均勻之流量分布的優點。 Further, even in any one of FIGS. 6(A) to 6(C), the gas discharge holes 102a1 and 102a2 and the gas discharge holes 102b1 and 102b2 can be arranged in each order or alternately, and the gas can be obtained along the gas. The long axis direction of the supply head 6 is advantageous in that a uniform flow distribution is easily obtained.
再者，按氣體之各種類的氣體擴散室之數量並不限定於兩個。即使設置2以上之偶數個，使氣流成為互相逆向的氣體擴散室之對形成1以上亦可。 Further, the number of gas diffusion chambers for various types of gases is not limited to two. Even if an even number of 2 or more is provided, the pair of gas diffusion chambers which are opposite to each other may be formed to have one or more pairs.
第7圖係表示設置有當作第1氣體用之氣體擴散室101a的氣體擴散室101a1~101a4之2對4室、當作第2氣體用之氣體擴散室101b的氣體擴散室101b1~101b4之2對4室，合計4對8室之氣體擴散室101的氣體供給頭6之一水平剖面例。在本例中，將第1氣體用之氣體吐出孔102a1~102a4之開口之配置間距，及第2氣體用之氣體吐出孔102b1~102b4之開口之配置間距皆設為“P”。然後，將氣體吐出孔102a1~102a4之開口之列，和氣體吐出孔102b1~102b4之開口之列互相偏移“P/2”間距。依此，第1氣體用之氣體吐出孔102a(102a1~102a4)之開口，和第2氣體用之氣體吐出孔102b(102b1~102b4)之開口被交互配置，並且可以“P/2”間距之等間隔配置。藉由如此配置，與第6圖(A)~第6圖(C)所示之配置例相同，可以提升第1氣體和第2氣 體之混合均勻性。 Fig. 7 shows two pairs of four chambers of the gas diffusion chambers 101a1 to 101a4 which are the gas diffusion chambers 101a for the first gas, and the gas diffusion chambers 101b1 to 101b4 which are the gas diffusion chambers 101b for the second gas. An example of a horizontal cross section of one of the gas supply heads 6 of the gas diffusion chamber 101 of the four pairs of four chambers of two pairs of four chambers. In this example, the arrangement pitch of the openings of the gas discharge holes 102a1 to 102a4 for the first gas and the arrangement pitch of the openings of the gas discharge holes 102b1 to 102b4 for the second gas are both set to "P". Then, the rows of the openings of the gas discharge holes 102a1 to 102a4 and the rows of the gas discharge holes 102b1 to 102b4 are shifted from each other by a "P/2" pitch. Accordingly, the openings of the gas discharge holes 102a (102a1 to 102a4) for the first gas and the openings of the gas discharge holes 102b (102b1 to 102b4) for the second gas are alternately arranged, and can be spaced apart by "P/2". Equally spaced configuration. With this configuration, the first gas and the second gas can be lifted in the same manner as the arrangement example shown in FIGS. 6(A) to 6(C). The uniformity of mixing of the body.
接著，針對朝氣體供給頭6供給氣體之幾個例予以說明。以下說明之氣體的供給例，為使用TMA氣體當作第1氣體，使用水蒸氣(H2O)氣體當作第2氣體之氧化鋁(Al2O3)成膜製程之例。 Next, a few examples of supplying gas to the gas supply head 6 will be described. An example of the supply of the gas described below is an example in which a TMA gas is used as the first gas and a vapor (H 2 O) gas is used as the second gas in the alumina (Al 2 O 3 ) film formation process.
第1例為不使用惰性氣體，僅使用TMA氣體及水蒸氣氣體而進行氧化鋁成膜製程之例。 The first example is an example in which an alumina forming process is carried out using only TMA gas and steam gas without using an inert gas.
第8圖為表示氣體供給例之第1例的時序圖，第9圖(A)~第9圖(D)係在每個主要時序表示氣體供給頭6之氣體擴散室101之狀態的圖示。 Fig. 8 is a timing chart showing a first example of the gas supply example, and Figs. 9(A) to 9(D) are diagrams showing the state of the gas diffusion chamber 101 of the gas supply head 6 at each main timing. .
首先，如第8圖之步驟1所示般，打開第1圖所示之閥V1、V2(ON)，將第1氣體TMA從互相逆向供給至氣體擴散室101a1、101a2內。被供給至氣體擴散室101a1、101a2內之第1氣體TMA係經氣體吐出孔102a1、102a2而被供給至處理空間2內(第9圖(A))。 First, as shown in step 1 of Fig. 8, the valves V1 and V2 (ON) shown in Fig. 1 are opened, and the first gas TMA is supplied from the mutually opposite directions to the gas diffusion chambers 101a1 and 101a2. The first gas TMA supplied into the gas diffusion chambers 101a1 and 101a2 is supplied into the processing space 2 through the gas discharge holes 102a1 and 102a2 (Fig. 9(A)).
接著，如第8圖之步驟2所示般，關閉第1圖所示之閥V1、V2(OFF)，打開閥VAC1、VAC2(ON)。依此，氣體擴散室101a1、101a2內之第1氣體TMA被互相逆向地排氣(第9圖(B))。 Next, as shown in step 2 of Fig. 8, the valves V1 and V2 (OFF) shown in Fig. 1 are closed, and the valves VAC1 and VAC2 (ON) are opened. Thereby, the first gas TMA in the gas diffusion chambers 101a1, 101a2 is exhausted to each other in the reverse direction (Fig. 9(B)).
接著，如第8圖之步驟3所示般，關閉第1圖所示之閥VAC1、VAC2(OFF)，打開閥V3、V4 (ON)，將第2氣體H2O從互相逆向供給至氣體擴散室101b1、101b2內。被供給至氣體擴散室101b1、101b2內之第2氣體H2O係經氣體吐出孔102b1、102b2而被供給至處理空間2內(第9圖(C))。 Next, as shown in step 3 of Fig. 8, the valves VAC1 and VAC2 (OFF) shown in Fig. 1 are closed, and the valves V3 and V4 (ON) are opened to supply the second gas H 2 O from each other to the gas. Inside the diffusion chambers 101b1, 101b2. The second gas H 2 O supplied into the gas diffusion chambers 101b1 and 101b2 is supplied into the processing space 2 through the gas discharge holes 102b1 and 102b2 (Fig. 9(C)).
接著，如第8圖之步驟4所示般，關閉第1圖所示之閥V3、V4(OFF)，打開閥VAC3、VAC4(ON)。依此，氣體擴散室101b1、101b2內之第2氣體H2O被互相逆向地排氣(第9圖(D))。 Next, as shown in step 4 of Fig. 8, the valves V3 and V4 (OFF) shown in Fig. 1 are closed, and the valves VAC3 and VAC4 (ON) are opened. Accordingly, the second gas H 2 O in the gas diffusion chambers 101b1 and 101b2 is exhausted toward each other (Fig. 9(D)).
接著，如第8圖之步驟5所示般，關閉第1圖所示之閥VAC3、VAC4(OFF)，再次打開閥V1、V2(ON)，將步驟1~步驟4重複至所設定的次數。藉由將步驟1~步驟4重複至所設定之次數，在被處理體G上成膜所設計之膜厚的氧化鋁薄膜。 Next, as shown in step 5 of Fig. 8, the valves VAC3 and VAC4 (OFF) shown in Fig. 1 are closed, the valves V1 and V2 (ON) are opened again, and steps 1 to 4 are repeated until the set number of times. . By repeating steps 1 to 4 to the set number of times, a film thickness of alumina film designed to be formed is formed on the object G.
例如，藉由進行如此之氣體供給，實行一實施型態之基板處理裝置的氧化鋁成膜處理。 For example, by performing such gas supply, an alumina film formation process of the substrate processing apparatus of one embodiment is carried out.
再者，在第1例中不使用惰性氣體。於實施第1例之時，可取得可從基板處理裝置1省略第1圖所示之惰性氣體供給系統11及閥V5~V8的優點。 Further, in the first example, an inert gas was not used. When the first example is carried out, the advantage of the inert gas supply system 11 and the valves V5 to V8 shown in Fig. 1 can be eliminated from the substrate processing apparatus 1.
第2例為使用惰性氣體、TMA氣體及水蒸氣氣體進行氧化鋁成膜製程之例。使用氮(N2)氣體當作惰性氣體。 The second example is an example in which an alumina film forming process is carried out using an inert gas, a TMA gas, and a steam gas. A nitrogen (N 2 ) gas is used as the inert gas.
第10圖為表示氣體供給例之第2例的時序 圖，第11圖(A)~第11圖(D)係在每個主要時序表示氣體供給頭6之氣體擴散室101之狀態的圖示。 Figure 10 is a timing chart showing the second example of the gas supply example. Fig. 11 (A) to Fig. 11 (D) are diagrams showing the state of the gas diffusion chamber 101 of the gas supply head 6 at each main timing.
如第10圖所示般，第2例與第1例不同的是在處理期間、閥V5~V8為開啟狀態(ON)、對氣體擴散室101a1、101a2、101b1、101b2內隨時供給惰性氣體N2。 As shown in Fig. 10, the second example differs from the first example in that the valves V5 to V8 are turned on during the processing period, and the inert gas N is supplied to the gas diffusion chambers 101a1, 101a2, 101b1, and 101b2 at any time. 2 .
在該狀態下，如第10圖之步驟1所示般，打開第1圖所示之閥V1、V2(ON)，將第1氣體TMA及惰性氣體N2從互相逆向供給至氣體擴散室101a1、101a2內(第11圖(A))。 In this state, as shown in step 1 of Fig. 10, the valves V1 and V2 (ON) shown in Fig. 1 are opened, and the first gas TMA and the inert gas N 2 are supplied from the opposite sides to the gas diffusion chamber 101a1. , 101a2 (Fig. 11 (A)).
接著，如第10圖之步驟2所示般，關閉第1圖所示之閥V1、V2(OFF)，打開閥VAC1、VAC2。依此，將氣體擴散室101a1、101a2內之第1氣體TMA及惰性氣體N2互相逆向地排氣。此時，閥V5及V6被開啟(ON)。因此，針對惰性氣體N2係一面供給一面排氣(第11圖(B))。 Next, as shown in step 2 of Fig. 10, the valves V1 and V2 (OFF) shown in Fig. 1 are closed, and the valves VAC1 and VAC2 are opened. Accordingly, the first gas TMA and the inert gas N 2 in the gas diffusion chambers 101a1 and 101a2 are exhausted to each other in the reverse direction. At this time, valves V5 and V6 are turned "ON". Therefore, one side of the inert gas N 2 system is supplied with exhaust gas (Fig. 11(B)).
接著，如第10圖之步驟3所示般，關閉第1圖所示之閥VAC1、VAC2(OFF)，打開閥V3、V4(ON)，將第2氣體H2O及惰性氣體N2從互相逆向供給至氣體擴散室101b1、101b2內(第11圖(C))。 Next, as shown in step 3 of Fig. 10, the valves VAC1 and VAC2 (OFF) shown in Fig. 1 are closed, the valves V3 and V4 (ON) are opened, and the second gas H 2 O and the inert gas N 2 are removed. The gas diffusion chambers 101b1 and 101b2 are supplied to each other in the reverse direction (Fig. 11(C)).
接著，如第10圖之步驟4所示般，關閉第1圖所示之閥V3、V4(OFF)，打開閥VAC3、VAC4(ON)。依此，將氣體擴散室101b1、101b2內之第2氣體H2O及惰性氣體N2互相逆向地排氣。此時，也與第1 氣體TMA之情形相同，因閥V7及V8開啟(ON)，故針對惰性氣體N2也係一面供給一面排氣(第11圖(D))。 Next, as shown in step 4 of Fig. 10, the valves V3 and V4 (OFF) shown in Fig. 1 are closed, and the valves VAC3 and VAC4 (ON) are opened. Accordingly, the second gas H 2 O and the inert gas N 2 in the gas diffusion chambers 101b1 and 101b2 are exhausted to each other in the reverse direction. At this time, similarly to the case of the first gas TMA, since the valves V7 and V8 are turned "ON", the inert gas N2 is supplied with one side of the exhaust gas (Fig. 11(D)).
接著，如第10圖之步驟5所示般，關閉第1圖所示之閥VAC3、VAC4(OFF)，再次打開閥V1、V2(ON)，將步驟1~步驟4重複至所設定的次數。 Next, as shown in step 5 of Fig. 10, the valves VAC3 and VAC4 (OFF) shown in Fig. 1 are closed, the valves V1 and V2 (ON) are opened again, and steps 1 to 4 are repeated until the set number of times. .
如此一來，亦可對氣體擴散室101a1、101a2、101b1及101b2隨時供給惰性氣體N2。 In this way, the inert gas N 2 can be supplied to the gas diffusion chambers 101a1, 101a2, 101b1, and 101b2 at any time.
再者，藉由對氣體擴散室101a1、101a2、101b1及101b2內隨時供給惰性氣體N2，氣體擴散室101a1、101a2、101b1及101b2內之含有TMA氣體或H2O氣體的氛圍被置換成惰性氣體氛圍。因此，可以取得下述優點，可以更佳地抑制由於殘留在氣體擴散室101之內部的TMA氣體或H2O氣體之處理氣體而在非意圖之區域產生不需要的堆積物的情形。 Further, by supplying the inert gas N 2 to the gas diffusion chambers 101a1, 101a2, 101b1, and 101b2 at any time, the atmosphere containing the TMA gas or the H 2 O gas in the gas diffusion chambers 101a1, 101a2, 101b1, and 101b2 is replaced with inertness. Gas atmosphere. Therefore, the following advantages can be obtained, and it is possible to more preferably suppress the occurrence of unnecessary deposits in an unintended region due to the processing gas of the TMA gas or the H 2 O gas remaining inside the gas diffusion chamber 101.
第3例也與第2例相同，使用惰性氣體、TMA氣體及水蒸氣氣體而進行氧化鋁成膜製程之例。 Similarly to the second example, the third example is an example in which an aluminum oxide film forming process is carried out using an inert gas, a TMA gas, and a steam gas.
第12圖為表示氣體供給例之第3例的時序圖，第13圖(A)~第13圖(F)係在每個主要時序表示氣體供給頭6之氣體擴散室101之狀態的圖示。 Fig. 12 is a timing chart showing a third example of the gas supply example, and Figs. 13(A) to 13(F) are diagrams showing the state of the gas diffusion chamber 101 of the gas supply head 6 at each main timing. .
如第12圖及第13圖(A)~第13圖(F)所示般，第3例與第2例不同的是從氣體擴散室101a1、 101a2排出氣體之後，以及從氣體擴散室101b1、101b2排出氣體之後，如步驟6、7所示般，至供給處理氣體之間設置僅供給惰性氣體N2的程序，即是至使用下一個不同的處理氣體的工程之間設置有時間間隔。 As shown in Fig. 12 and Fig. 13 (A) to Fig. 13 (F), the third example differs from the second example in that gas is discharged from the gas diffusion chambers 101a1, 101a2, and from the gas diffusion chamber 101b1. After the gas is exhausted from 101b2, as shown in steps 6 and 7, a program for supplying only the inert gas N 2 to the supply process gas is provided, that is, a time interval is provided between the processes for using the next different process gas.
如第3例般，藉由在使用TMA氣體之工程和使用水蒸氣氣體之工程之間，設置對氣體擴散室101a1、101a2或氣體擴散室101b1、101b2僅供給惰性氣體之程序，可將氣體擴散室101a1、101a2、101b1及101b2內之處理氣體，在本例中包含TMA氣體或H2O氣體的氛圍更確實地置換成惰性氣體氛圍。而且，在對氣體擴散室101a1、101a2或氣體擴散室101b1、101b2僅供給惰性氣體之程序中，可以將氣體吐出孔102a1、102a2、102b1及102b2之內部置換成惰性氣體氛圍。因此，可以取得下述優點，除了氣體擴散室101之內部外，可以充分排出殘留在氣體吐出孔102之內部的處理氣體，並且比起第2例可以更佳地抑制因殘留之處理氣體而在非意圖之區域產生不需要之堆積物的情形。 As in the third example, the gas can be diffused by providing a process of supplying only the inert gas to the gas diffusion chambers 101a1, 101a2 or the gas diffusion chambers 101b1, 101b2 between the work using the TMA gas and the work using the steam gas. The atmosphere of the processing gas contained in the chambers 101a1, 101a2, 101b1, and 101b2 is more reliably replaced with the atmosphere of the TMA gas or the H 2 O gas in this example. Further, in the procedure of supplying only the inert gas to the gas diffusion chambers 101a1, 101a2 or the gas diffusion chambers 101b1, 101b2, the inside of the gas discharge holes 102a1, 102a2, 102b1, and 102b2 can be replaced with an inert gas atmosphere. Therefore, it is possible to obtain the advantage that the processing gas remaining inside the gas discharge hole 102 can be sufficiently discharged in addition to the inside of the gas diffusion chamber 101, and the residual processing gas can be more preferably suppressed than in the second example. Unintended areas create unwanted deposits.
並且，第2例比起第3例，因無步驟6、7，故在生產量考量上，相較於第3例為有利。因此，針對要實施第2例或第3例，若考慮生產量之觀點，精度佳的成膜製程之觀點的雙方，採用任一者即可。 Further, in the second example, since there are no steps 6 and 7 as compared with the third example, it is advantageous in comparison with the third example in terms of throughput. Therefore, in order to implement the second example or the third example, it is sufficient to use either of the viewpoints of the film forming process with high precision in consideration of the production amount.
以上，雖然依循一實施型態說明該發明，但是該發明並不限定於上述一實施型態，可作各種變形。再者，在該發明之實施型態，上述一實施型態並非唯一之實 施型態。 Although the invention has been described above in accordance with an embodiment, the invention is not limited to the above-described embodiment, and various modifications can be made. Furthermore, in the embodiment of the invention, the above embodiment is not the only one Mode type.
例如，在一實施型態中，平台4為僅一個，但亦可以設成多層地疊層平台4，將基板處理裝置設為批量式基板處理裝置。 For example, in one embodiment, the platform 4 is only one, but the platform 4 may be stacked in a plurality of layers, and the substrate processing apparatus may be a batch type substrate processing apparatus.
再者，針對所形成之膜並不限定於氧化鋁膜，也如實施型態中所述般，上述一實施型態適用各種膜之成膜。 Further, the film to be formed is not limited to the aluminum oxide film, and as described in the embodiment, the above-described embodiment is suitable for film formation of various films.
其他，只要在不脫離其主旨之範圍下可做各種變形。 Others, as long as they do not deviate from the scope of their subject matter can be modified.
6‧‧‧氣體供給頭 6‧‧‧ gas supply head
100‧‧‧本體 100‧‧‧ body
101、101a、101b、101a1、101a2、101b1、101b2‧‧‧氣體擴散室 101, 101a, 101b, 101a1, 101a2, 101b1, 101b2‧‧‧ gas diffusion chamber
102、102a、102b、102a1、102a2、102b1、102b2‧‧‧氣體吐出孔 102, 102a, 102b, 102a1, 102a2, 102b1, 102b2‧‧‧ gas discharge holes
103‧‧‧氣體供給口 103‧‧‧ gas supply port
104‧‧‧氣體排氣口 104‧‧‧ gas vents
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Citations (6)
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| JP2000277509A (en) * | 1999-03-29 | 2000-10-06 | Kokusai Electric Co Ltd | Substrate treating system |
| JP2004288900A (en) * | 2003-03-24 | 2004-10-14 | Tokyo Electron Ltd | Apparatus and method for processing substrate, and gas nozzle |
| JP2005238219A (en) * | 2003-06-04 | 2005-09-08 | Sekisui Chem Co Ltd | Plasma treatment apparatus |
| JP2009044093A (en) * | 2007-08-10 | 2009-02-26 | Tokyo Electron Ltd | Film forming method, film forming apparatus and storage medium |
| WO2010058560A1 (en) * | 2008-11-20 | 2010-05-27 | 株式会社エバテック | Plasma processing apparatus |
| JP2010212433A (en) * | 2009-03-10 | 2010-09-24 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition apparatus |
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| JP4704894B2 (en) * | 2005-11-16 | 2011-06-22 | 国立大学法人京都大学 | Film forming method and film forming apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000277509A (en) * | 1999-03-29 | 2000-10-06 | Kokusai Electric Co Ltd | Substrate treating system |
| JP2004288900A (en) * | 2003-03-24 | 2004-10-14 | Tokyo Electron Ltd | Apparatus and method for processing substrate, and gas nozzle |
| JP2005238219A (en) * | 2003-06-04 | 2005-09-08 | Sekisui Chem Co Ltd | Plasma treatment apparatus |
| JP2009044093A (en) * | 2007-08-10 | 2009-02-26 | Tokyo Electron Ltd | Film forming method, film forming apparatus and storage medium |
| WO2010058560A1 (en) * | 2008-11-20 | 2010-05-27 | 株式会社エバテック | Plasma processing apparatus |
| JP2010212433A (en) * | 2009-03-10 | 2010-09-24 | Mitsui Eng & Shipbuild Co Ltd | Atomic layer deposition apparatus |
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| KR20130085962A (en) | 2013-07-30 |
| KR101656916B1 (en) | 2016-09-12 |
| CN103215566A (en) | 2013-07-24 |
| TW201343264A (en) | 2013-11-01 |
| CN103215566B (en) | 2016-12-28 |
| JP2013149872A (en) | 2013-08-01 |
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