TWI594080B - Photoimaging - Google Patents
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Description
本發明係關於一種用於進行光成像之方法及裝置。更特定言之,本發明係關於一種用於對經濕的可固化光聚合物覆蓋之基板進行光成像之方法及裝置,其中經光成像基板係用於形成影像,諸如光化學加工業(PCMI)中所用之電路或其他特徵,例如線、正方形、螺旋形、圓形或其他幾何及非幾何形狀。 The present invention relates to a method and apparatus for performing photoimaging. More particularly, the present invention relates to a method and apparatus for photoimaging a substrate coated with a wet curable photopolymer, wherein the photoimageable substrate is used to form an image, such as the photochemical processing industry (PCMI). Circuitry or other features used in, for example, lines, squares, spirals, circles, or other geometric and non-geometric shapes.
雖然此項技術中存在用於製造適合形成PCB或PCMI中之結構之細線及特徵的先前技術,但該等技術中之許多技術受諸多明顯缺點之困擾。舉例而言,許多先前技術受不良解析度之困擾。此外,確實提供高解析度之技術通常需要複雜之裝置,諸如精密之雷射設備。另一個問題在於,先前技術需要使用部分固化之乾光聚合物膜,該等膜通常支撐在聚酯(例如邁拉(Mylar))膜上。該等乾膜之厚度對經光成像表面之解析度及/或清晰度具有不利影響,因為由此允許在光成像製程期間發生不希望之底切(undercutting)(即光影)。亦存在將部分固化之乾膜黏附至基板方面之問題及污染問題,污染問題會在光成像製程中再次引起問題。部分固化之乾膜在大量使用時亦極其昂貴。該等系統描述於US 4,888,270及US 4,954,421中,該等專利以引用之方式併入本文中。 While there are prior art techniques in the art for fabricating thin lines and features suitable for forming structures in a PCB or PCMI, many of these techniques suffer from a number of significant disadvantages. For example, many prior techniques suffer from poor resolution. In addition, technologies that do provide high resolution often require complex devices such as precision laser equipment. Another problem is that prior art requires the use of partially cured dry photopolymer films that are typically supported on a polyester (e.g., Mylar) film. The thickness of the dry film adversely affects the resolution and/or sharpness of the photoimaged surface, as this allows for undesirable undercutting (i.e., light and shadow) during the photoimaging process. There are also problems in adhering a partially cured dry film to a substrate and contamination problems, which can cause problems again in the photoimaging process. Partially cured dry films are also extremely expensive when used in large quantities. Such systems are described in U.S. Patent No. 4,888,270, the disclosure of which is incorporated herein by reference.
本發明之至少一個態樣之目標在於避免或減輕至少一個 或多個上述間題。 At least one aspect of the present invention is directed to avoiding or alleviating at least one Or multiple of the above questions.
本發明之至少一個態樣之另一個目標在於提供一種用於對表面進行光成像之改良方法。 Another object of at least one aspect of the present invention is to provide an improved method for photo imaging of a surface.
本發明之至少一個態樣之又一個目標在於提供一種用於製造具有高解析度及小跡線寬度(即細線)或形狀之電路以便用於PCMI中之成本有效型方法。 Yet another object of at least one aspect of the present invention is to provide a cost effective method for fabricating circuits having high resolution and small trace width (i.e., thin lines) or shapes for use in PCMI.
本發明之至少一個態樣之另一個目標在於提供一種用於製造適用於PCB之高密度電路之成本有效型方法。 Another object of at least one aspect of the present invention is to provide a cost effective method for fabricating high density circuits suitable for use in PCBs.
本發明之至少一個態樣之另一個目標在於提供一種用於在較大面積上以高解析度及小跡線寬度對表面進行光成像之改良方法。 Another object of at least one aspect of the present invention is to provide an improved method for photo imaging of a surface with high resolution and small trace width over a large area.
本發明之至少一個態樣之另一個目標在於提供一種用於對傳導性材料之噴墨沈積物進行成像之方法。 Another object of at least one aspect of the present invention is to provide a method for imaging an inkjet deposit of a conductive material.
根據本發明之第一態樣,提供一種用於對基板進行光成像之方法,該方法包括:提供具有披覆層之基板;在該披覆層之至少一部分上沈積液態UV可固化光聚合物,以形成厚度小於約178 μm(0.007吋)之UV可固化光聚合物膜;將光工具定位至該液態UV可固化光聚合物上;以及向液態UV可固化光聚合物施加輻射以便在透過該光工具固化曝光之區域中的該光聚合物層。 According to a first aspect of the present invention, a method for photo imaging a substrate is provided, the method comprising: providing a substrate having a cladding layer; depositing a liquid UV curable photopolymer on at least a portion of the cladding layer To form a UV curable photopolymer film having a thickness of less than about 178 μm (0.007 Å); positioning a light tool onto the liquid UV curable photopolymer; and applying radiation to the liquid UV curable photopolymer for transmission The optical tool cures the photopolymer layer in the exposed regions.
重要的是,本發明在成像之前不進行預先乾燥。 Importantly, the present invention does not pre-dry prior to imaging.
本發明因此係關於一種對經濕的液態可固化光聚合物覆蓋之基板進行光成像之方法,其中經光成像基板可用於例如形成電路,諸如PCB及平板顯示器,或用於產生精細之細節,諸如PCMI中所用之幾何或非幾何形狀。本發明亦可關於在介電質上形成介電質影像。與許多先前技術形成對比,本發明因此係關於使用濕膜而非昂貴的乾膜,諸如Riston(商標,DuPont)。乾膜與使用濕膜相比顯然更昂貴。與目前使用之基於溶劑之濕膜相比,使用100%固體濕膜亦克服了對預先乾燥之需要,且因此獲得極其可控之製程。 The present invention is therefore directed to a method of photoimaging a substrate covered by a wet liquid curable photopolymer, wherein the photoimageable substrate can be used, for example, to form circuits such as PCBs and flat panel displays, or to produce fine details, Geometric or non-geometric shapes such as those used in PCMI. The invention may also relate to the formation of a dielectric image on a dielectric. In contrast to many prior art, the present invention is therefore directed to the use of wet films rather than expensive dry films such as Riston (trademark, DuPont). Dry film is obviously more expensive than using a wet film. The use of a 100% solids wet film also overcomes the need for pre-drying compared to currently used solvent-based wet films, and thus results in an extremely controlled process.
在本發明中,在用例如UV輻射照射濕光聚合物膜之前不進行乾燥步驟(即預先乾燥步驟)。此與在進行照射前乾燥濕膜之先前技術形成鮮明之對比。 In the present invention, the drying step (i.e., the pre-drying step) is not performed before the wet photopolymer film is irradiated with, for example, UV radiation. This is in sharp contrast to the prior art of drying the wet film prior to irradiation.
在本發明中,較佳為光聚合物可實質上完全為固體,即可能存在之溶劑之量為零或極低。已意外地發現由此可改良成像及解析度。然而,本發明亦涵蓋存在少量溶劑。在本發明中,因此可存在少於約1%溶劑、少於約3%溶劑、少於約10%溶劑或少於約15%溶劑。 In the present invention, it is preferred that the photopolymer can be substantially completely solid, i.e., the amount of solvent that may be present is zero or very low. It has been unexpectedly found that imaging and resolution can be improved thereby. However, the invention also contemplates the presence of small amounts of solvent. In the present invention, therefore, less than about 1% solvent, less than about 3% solvent, less than about 10% solvent, or less than about 15% solvent may be present.
在具體實施例中,存在三層結構,其用於本發明中。底層為基板,中間層為UV可固化光聚合物,且頂層為透明塑膠或經保護性化學物質層塗佈之塑膠。 In a particular embodiment, there is a three layer structure that is used in the present invention. The bottom layer is a substrate, the middle layer is a UV curable photopolymer, and the top layer is a transparent plastic or a plastic coated with a protective chemical layer.
基板披覆層可由任何適當之材料或複合物製造或包含任何適當之材料或複合物,且可例如為金屬的或非金屬的。在具體實施例中,因此可存在金屬披覆層,且在替代性實 施例中,可存在非金屬披覆層。 The substrate coating layer can be made of any suitable material or composite or comprise any suitable material or composite, and can be, for example, metallic or non-metallic. In a specific embodiment, a metal coating layer may therefore be present, and in an alternative In the embodiment, a non-metallic coating layer may be present.
披覆層可至少部分地圍繞或完全圍繞基板延伸。或者,基板可包含第一側面及第二側面,且披覆層可在基板之第一側面及第二側面之一或兩者上延伸。因此,基板可經層壓成在基板之第一側面及第二側面之一或兩者上具有披覆層。披覆層可呈膜或層形式,其連接及/或黏附至基板上。 The cladding layer can extend at least partially around or completely around the substrate. Alternatively, the substrate can include a first side and a second side, and the cladding layer can extend over one or both of the first side and the second side of the substrate. Thus, the substrate can be laminated to have a coating on one or both of the first side and the second side of the substrate. The cladding layer can be in the form of a film or layer that is attached and/or adhered to the substrate.
通常,金屬披覆層可包含導電材料或由導電材料組成。可例如為介電材料之基板可完全或至少實質上由金屬披覆層封裝。金屬披覆層可包含導電材料或由導電材料組成,諸如任何適合之金屬材料。適合之金屬可例如為銅、銀、金及其類似物。 Typically, the metal cladding layer may comprise or consist of a conductive material. The substrate, which may be, for example, a dielectric material, may be encapsulated completely or at least substantially by a metal coating. The metal cladding layer may comprise or consist of a conductive material, such as any suitable metal material. Suitable metals can be, for example, copper, silver, gold, and the like.
或者,披覆層可由以下各物製造或包含以下各物:導電聚合物(PEDOTT)、石墨烯或導電氧化物,如氧化銦錫(Indium Tin Oxide,ITO)。 Alternatively, the cladding layer may be made of or comprise the following: a conductive polymer (PEDOTT), graphene or a conductive oxide such as Indium Tin Oxide (ITO).
在披覆層為非金屬之實施例中,披覆層可包含介電材料或由介電材料組成。 In embodiments where the cladding layer is non-metallic, the cladding layer may comprise or consist of a dielectric material.
具有披覆層之基板可為實質上平坦的,且尺寸可在至多約1 m×1 m之範圍內。本發明之優勢在於,除實際執行光成像製程之裝置以外,對基板實際上無尺寸限制。 The substrate having the cladding layer can be substantially planar and can range in size up to about 1 m by 1 m. An advantage of the present invention is that there is virtually no size limitation on the substrate other than the device that actually performs the photoimaging process.
液態光聚合物係呈濕形式(即呈可流動形式)。液態光聚合物之物理性質可匹配所需之固化性質。 The liquid photopolymer is in a wet form (i.e., in a flowable form). The physical properties of the liquid photopolymer match the desired curing properties.
通常,可以小於或等於約150 μm、125 μm、100 μm、75 μm、50 μm、25 μm、10 μm、5 μm、1 μm、0.5 μm或 0.1 μm之厚度來沈積液態光聚合物。或者,可以約177 μm至約0.1 μm、約125 μm至約0.1 μm、約100 μm至約0.1 μm、約75 μm至約0.1 μm、約50 μm至約0.1 μm、約25 μm至約0.1 μm或約10 μm至約0.1 μm範圍內之厚度來沈積液態光聚合物。較佳地,液態光聚合物可具有約5 μm之厚度。 Typically, it can be less than or equal to about 150 μm, 125 μm, 100 μm, 75 μm, 50 μm, 25 μm, 10 μm, 5 μm, 1 μm, 0.5 μm or A liquid photopolymer is deposited with a thickness of 0.1 μm. Alternatively, it may be from about 177 μm to about 0.1 μm, from about 125 μm to about 0.1 μm, from about 100 μm to about 0.1 μm, from about 75 μm to about 0.1 μm, from about 50 μm to about 0.1 μm, from about 25 μm to about 0.1 μm. The liquid photopolymer is deposited at a thickness ranging from about 10 μm to about 0.1 μm. Preferably, the liquid photopolymer can have a thickness of about 5 μm.
藉由使用薄液態光聚合物膜允許在光成像製程中使用低強度輻射(例如UV光)。 The use of a thin liquid photopolymer film allows the use of low intensity radiation (e.g., UV light) in a photoimaging process.
液態光聚合物可施加至基板之第一側面及第二側面之僅一者或兩者上,其中基板之第一側面及第二側面兩者皆包含披覆層。因此,本發明可係關於單側或雙側曝光,呈例如前後對準。 The liquid photopolymer can be applied to only one or both of the first side and the second side of the substrate, wherein both the first side and the second side of the substrate comprise a coating. Thus, the invention may be directed to single side or double side exposure, for example in front-to-back alignment.
可以實質上均勻且連續之方式,使用任何適合之技術來沈積液態光聚合物。舉例而言,可使用噴霧、刷子、軋輥及/或浸漬塗佈系統來沈積液態光聚合物層。 The liquid photopolymer can be deposited using any suitable technique in a substantially uniform and continuous manner. For example, a liquid photopolymer layer can be deposited using a spray, brush, roll, and/or dip coating system.
在施加液態光聚合物之前,可使用接觸清潔製程來清潔包含披覆層之基板,以便自披覆層表面移除碎屑及/或污染。 Prior to application of the liquid photopolymer, a contact cleaning process can be used to clean the substrate comprising the cladding layer to remove debris and/or contamination from the surface of the cladding layer.
一旦液態光聚合物已施加至具有披覆層之基板上,即可將光工具定位至基板上。隨後可向所沈積之液態光聚合物施加壓力。藉由施加壓力,可展開及/或擠壓液態光聚合物,以便獲得具有實質上均勻之厚度的實質上均勻連續之光聚合物膜。在具體實施例中,可使用基於軋輥之系統來施加輾壓力,且因此可用於展佈液態光聚合物。通常,橡 膠圓柱輥可在光工具上滾軋,由此向液態光聚合物施加壓力。可實質上同時在基板之兩個側面上進行展開及/或擠壓。展開及/或擠壓之具體功能在於,此舉有助於確保實質上無空氣並且因此實質上無氧氣截留在液態光聚合物下面。較佳為無空氣且無氧氣截留在液態光聚合物下面。因為所截留之氧氣會減慢光成像(即固化)製程,故此做法克服了對複雜光系統之需要,且亦對製程速度提供了顯著之改良。 Once the liquid photopolymer has been applied to the substrate having the cladding layer, the optical tool can be positioned onto the substrate. Pressure can then be applied to the deposited liquid photopolymer. The liquid photopolymer can be unrolled and/or extruded by application of pressure to obtain a substantially uniform continuous photopolymer film having a substantially uniform thickness. In a particular embodiment, a roll-based system can be used to apply the helium pressure and thus can be used to spread liquid photopolymers. Usually, oak The rubber cylindrical roller can be rolled on the optical tool, thereby applying pressure to the liquid photopolymer. Unfolding and/or squeezing can be performed on both sides of the substrate at substantially the same time. A particular function of unfolding and/or squeezing is that this helps to ensure that there is substantially no air and therefore substantially no oxygen trapped underneath the liquid photopolymer. Preferably, there is no air and no oxygen is trapped under the liquid photopolymer. Because the trapped oxygen slows down the photoimaging (ie, curing) process, this approach overcomes the need for complex optical systems and provides significant improvements in process speed.
在光成像製程中使用光工具。光工具可為所需電路之負像或正像,且可允許光通過光工具的一些部分而不通過其他部分。光工具可由可撓性塑膠材料製造,且可連接至將光工具準確地定位在基板上在基板之至少一個側面或兩個側面上之機構。光工具可處於緊張狀態且纏繞在軋輥(如實心鋼輥)周圍。在具體實施例中,光工具亦可包含保護層,該保護層可能有助於在已進行成像之後從基板上剝離光工具。保護層可為任何適合之無黏性材料。保護性塗層之另一個優勢在於,其能夠在光成像製程期間沿光成像區域之整個長度提供針對化學侵蝕及濕度變化之保護。此意謂不需要將濕度維持在恆定之水準,從而提供更可控之製程環境。 Use light tools in photoimaging processes. The light tool can be a negative or positive image of the desired circuit and can allow light to pass through portions of the light tool without passing through other portions. The light tool can be made of a flexible plastic material and can be attached to a mechanism that accurately positions the light tool on the substrate on at least one side or both sides of the substrate. The light tool can be in tension and wrapped around a roll (such as a solid steel roll). In a particular embodiment, the light tool can also include a protective layer that can help to strip the light tool from the substrate after imaging has been performed. The protective layer can be any suitable non-stick material. Another advantage of a protective coating is that it provides protection against chemical attack and humidity changes along the entire length of the photoimageable region during the photoimaging process. This means that there is no need to maintain a constant level of humidity, providing a more controllable process environment.
在其他實施例中,光工具可為經成像之材料、透明塑膠,或經保護性化學物質層或能夠充當脫模塗層之任何其他專用材料塗佈以防止塑膠受化學物質或水分侵蝕的塑膠。 In other embodiments, the optical tool can be an imaged material, a clear plastic, or a protective chemical layer or any other specialized material capable of acting as a release coating to prevent plastic from being attacked by chemicals or moisture. .
所用之輻射可為使液態光聚合物固化之任何適合之輻射。在具體實施例中,可使用UV輻射來使已曝光之液態(例如濕)光聚合物聚合及/或硬化及/或凝固。UV輻射可具有約200至400 nm之波長,且可具有與固化所用光聚合物相匹配之強度。尤其較佳之UV光源可為UV LED,因為其產生極少量之熱,具有較長燈壽命,立即啟動,實質上無功率輸出減退,低維護,且可產生高水準之光強度。因此在根據本發明之便宜的光成像製程中,可使用LED來印刷細線。替代性光源可為用於對光聚合物直接進行成像之雷射光源或數位鏡器件(Digital Mirror Device,DMD)。 The radiation used can be any suitable radiation that cures the liquid photopolymer. In particular embodiments, UV radiation can be used to polymerize and/or harden and/or solidify the exposed liquid (eg, wet) photopolymer. The UV radiation can have a wavelength of from about 200 to 400 nm and can have a strength that matches the photopolymer used for curing. A particularly preferred UV source can be a UV LED because it produces a very small amount of heat, has a long lamp life, is immediately activated, has substantially no power output reduction, is low maintenance, and produces a high level of light intensity. Thus, in an inexpensive photoimaging process in accordance with the present invention, LEDs can be used to print thin lines. The alternative light source can be a laser source or a Digital Mirror Device (DMD) for imaging the photopolymer directly.
在本發明之具體實施例中,輻射可經校準以改良光成像製程之品質及/或解析度及/或清晰度。 In a particular embodiment of the invention, the radiation can be calibrated to improve the quality and/or resolution and/or sharpness of the photoimaging process.
可使用對準系統在基板之一個側面或兩個側面上準確地定位至少一個或兩個光工具。在應用至少一個或兩個光工具時,基板可實質上垂直地定位。 At least one or two light tools can be accurately positioned on one or both sides of the substrate using an alignment system. The substrate can be positioned substantially vertically when at least one or two light tools are applied.
本發明之光成像裝置可用於約每十秒加工約一片基板。 The light imaging device of the present invention can be used to process about one substrate per about ten seconds.
在施加光成像製程之輻射之後,可使用標準洗除或顯影製程來移除未曝露於輻射之液態光聚合物。 After application of the radiation from the photoimaging process, a standard wash or development process can be used to remove the liquid photopolymer that is not exposed to radiation.
本發明之方法亦可自含於小型潔淨室內,因此,由於不需要大型工業潔淨室,所以可顯著節約光成像製程之成本。 The method of the present invention can also be self-contained in a small clean room, and therefore, since a large industrial clean room is not required, the cost of the photo-imaging process can be significantly saved.
使用如本發明中所述之方法可獲得適用於電路之高清晰度細線。細線可具有任何以下寬度:小於或等於約200 μm;小於或等於約150 μm;小於或等於約140 μm;小於 或等於約130 μm;小於或等於約120 μm;小於或等於約110 μm;小於或等於約100 μm;小於或等於約90 μm;小於或等於約80 μm;小於或等於約75 μm;小於或等於約70 μm;小於或等於約60 μm;小於或等於約50 μm;小於或等於約40 μm;小於或等於約30 μm;小於或等於約20 μm;小於或等於約10 μm;或者小於或等於約5 μm。或者,細線可具有任何以下寬度:大於約200 μm;大於約150 μm;大於約100 μm;大於約75 μm;大於約50 μm;大於約20 μm;或大於約10 μm。或者,細線可具有任何以下寬度:約0.1至200 μm;約1至150 μm;約1至100 μm;約20至100 μm;或約5至75 μm。細線可用於PCB及其他電組件中,如平面螢幕顯示器。 High definition fine lines suitable for use in circuits can be obtained using the method as described in the present invention. The thin line may have any of the following widths: less than or equal to about 200 μm; less than or equal to about 150 μm; less than or equal to about 140 μm; less than Or equal to about 130 μm; less than or equal to about 120 μm; less than or equal to about 110 μm; less than or equal to about 100 μm; less than or equal to about 90 μm; less than or equal to about 80 μm; less than or equal to about 75 μm; less than or Equal to about 70 μm; less than or equal to about 60 μm; less than or equal to about 50 μm; less than or equal to about 40 μm; less than or equal to about 30 μm; less than or equal to about 20 μm; less than or equal to about 10 μm; or less than or Equal to about 5 μm. Alternatively, the fine lines can have any of the following widths: greater than about 200 μm; greater than about 150 μm; greater than about 75 μm; greater than about 75 μm; greater than about 50 μm; greater than about 20 μm; or greater than about 10 μm. Alternatively, the fine lines may have any of the following widths: about 0.1 to 200 μm; about 1 to 150 μm; about 1 to 100 μm; about 20 to 100 μm; or about 5 to 75 μm. Thin wires can be used in PCBs and other electrical components, such as flat screen displays.
本發明方法可具有以下附加優勢:所有步驟,諸如沈積液態光聚合物及移除光工具,皆可經由本發明之裝置在單一遍次(pass)中進行。舉例而言,在基板之至少一個或兩個側面上沈積液態光聚合物、將光工具定位在基板之至少一個或兩個側面上之液態聚合物上、向所沈積之液態光聚合物施加壓力以形成光聚合物膜,以及向液態光聚合物施加輻射以固化光聚合物層皆可經由本發明之光成像裝置在單一遍次中進行。因此,此一步式製程增加了經光成像基板通過裝置之通過量,且亦提供易於控制及監測之裝置。 The method of the invention may have the additional advantage that all steps, such as depositing a liquid photopolymer and removing the light tool, can be carried out in a single pass via the apparatus of the present invention. For example, depositing a liquid photopolymer on at least one or both sides of the substrate, positioning the optical tool on a liquid polymer on at least one or both sides of the substrate, applying pressure to the deposited liquid photopolymer The formation of the photopolymer film and the application of radiation to the liquid photopolymer to cure the photopolymer layer can be carried out in a single pass via the photoimageable device of the present invention. Therefore, this one-step process increases the throughput of the photoimageable substrate through the device and also provides a device that is easy to control and monitor.
本發明具有諸多優勢,該等優勢係藉由通過與先前技術相比小得多的深度進行光成像而獲得。舉例而言,由光聚合物薄膜及視情況選用之光工具保護層形成的可通過其進 行光成像之深度可為以下任一者:約0.1至50 μm;約1至50 μm;約1至25 μm;約1至10 μm;約1至8 μm;或約1至5 μm。通常,由光聚合物薄膜及視情況選用之光工具保護層形成的深度可為約8 μm。藉由具有相對較小的通過其進行光成像之深度可減少線生長,且因此允許形成極小線寬度。使用例如相對於垂線之照射角θ(參看圖8a及圖8b),本發明中發生之線生長之量可為以下任一者:小於約10 μm;小於約5 μm;小於約2 μm;小於約1 μm;小於約0.84 μm;小於約0.8 μm;小於約0.5 μm;或小於約0.25 μm。 The present invention has a number of advantages which are obtained by photoimaging by a much smaller depth than in the prior art. For example, a photopolymer film and optionally a light tool protective layer may be formed through it. The depth of the row light imaging may be any of: about 0.1 to 50 μm; about 1 to 50 μm; about 1 to 25 μm; about 1 to 10 μm; about 1 to 8 μm; or about 1 to 5 μm. Typically, the photopolymer film and optionally the optical tool protective layer may be formed to a depth of about 8 μm. Wire growth can be reduced by having a relatively small depth through which photo imaging is performed, and thus allows a very small line width to be formed. Using, for example, the illumination angle θ relative to the vertical (see Figures 8a and 8b), the amount of line growth occurring in the present invention can be any of: less than about 10 μm; less than about 5 μm; less than about 2 μm; less than About 1 μm; less than about 0.84 μm; less than about 0.8 μm; less than about 0.5 μm; or less than about 0.25 μm.
本發明亦可用於光化學加工業(PCMI)以及電子工業中。 The invention can also be used in the photochemical processing industry (PCMI) as well as in the electronics industry.
光成像可藉助於能夠準確地定位第一運載元件及第二運載元件之定位裝置,其中第一運載元件上之定位球容納在第二元件上之環形元件中。由此允許極準確地定位光工具。 The light imaging can be by means of a positioning device capable of accurately positioning the first carrier element and the second carrier element, wherein the positioning ball on the first carrier element is received in the ring element on the second element. This allows extremely accurate positioning of the light tool.
根據本發明之第二態樣,提供一種用於對基板進行光成像之方法,該方法包括:提供具有披覆層之基板;在該披覆層之至少一部分上沈積液態光聚合物以形成光聚合物薄膜;將光工具定位至該液態光聚合物上;以及向液態光聚合物施加輻射以便在透過該光工具固化曝光之區域中的該光聚合物層。 According to a second aspect of the present invention, a method for photo imaging a substrate is provided, the method comprising: providing a substrate having a cladding layer; depositing a liquid photopolymer on at least a portion of the cladding layer to form light a polymeric film; positioning a light tool onto the liquid photopolymer; and applying a radiation to the liquid photopolymer to cure the exposed photopolymer layer in the region exposed by the light tool.
在本發明中,在用例如UV輻射照射濕光聚合物膜之前 亦不進行乾燥步驟(即預先乾燥步驟)。 In the present invention, before the wet photopolymer film is irradiated with, for example, UV radiation The drying step (i.e., the pre-drying step) is also not performed.
根據本發明之第三態樣,提供根據第一態樣或第二態樣形成的經光成像電路。 According to a third aspect of the invention, a photoimageable circuit formed in accordance with a first aspect or a second aspect is provided.
通常,經光成像電路可為可用於製造例如PCB及平板顯示器之電路。 Typically, the photoimageable circuitry can be circuitry that can be used to fabricate, for example, PCBs and flat panel displays.
根據本發明之第四態樣,提供根據第一態樣或第二態樣形成的在介電質上之介電質影像。 According to a fourth aspect of the present invention, a dielectric image on a dielectric formed in accordance with a first aspect or a second aspect is provided.
根據本發明之第五態樣,提供用於對基板進行光成像之裝置,該裝置包含:至少一個光工具,其能夠定位至具有披覆層之基板之至少一個側面上之液態光聚合物上;軋輥,其能夠向具有披覆層之基板上之液態光聚合物施加壓力,以形成厚度小於約178 μm(0.007吋)之光聚合物膜;以及輻射源,其能夠固化液態光聚合物。 According to a fifth aspect of the invention, there is provided apparatus for photo imaging a substrate, the apparatus comprising: at least one optical tool capable of positioning onto a liquid photopolymer on at least one side of a substrate having a cladding layer A roll capable of applying pressure to a liquid photopolymer on a substrate having a coating to form a photopolymer film having a thickness of less than about 178 μm (0.007 Å); and a radiation source capable of curing the liquid photopolymer.
披覆層可由任何適當材料或複合物製造或包含任何適當材料或複合物,且可例如為金屬的或非金屬的。 The cover layer can be made of any suitable material or composite or comprise any suitable material or composite, and can be, for example, metallic or non-metallic.
在本發明中,在用例如UV輻射照射濕光聚合物膜之前亦不進行乾燥步驟(即預先乾燥步驟)。因此該裝置不包含用於在將膜施加至輻射源之前預先乾燥濕光聚合物膜之裝置。 In the present invention, the drying step (i.e., the pre-drying step) is also not performed before the wet photopolymer film is irradiated with, for example, UV radiation. The device therefore does not comprise means for pre-drying the wet photopolymer film prior to applying the film to the radiation source.
細線可具有任何以下寬度:小於或等於約200 μm;小於或等於約150 μm;小於或等於約140 μm;小於或等於約130 μm;小於或等於約120 μm;小於或等於約110 μm;小 於或等於約100 μm;小於或等於約90 μm;小於或等於約80 μm;小於或等於約75 μm;小於或等於約70 μm;小於或等於約60 μm;小於或等於約50 μm;小於或等於約40 μm;小於或等於約30 μm;小於或等於約20 μm;小於或等於約10 μm;或小於或等於約5 μm。或者,細線可具有任何以下寬度:大於約200 μm;大於約150 μm;大於約100 μm;大於約75 μm;大於約50 μm;大於約20 μm;或大於約10 μm。或者,細線可具有任何以下寬度:約0.1至200 μm;約1至150 μm;約1至100 μm;約20至100 μm;或約5至75 μm。細線可用於PCB及其他電組件中,如平面螢幕顯示器。 The thin lines may have any of the following widths: less than or equal to about 200 μm; less than or equal to about 150 μm; less than or equal to about 140 μm; less than or equal to about 130 μm; less than or equal to about 120 μm; less than or equal to about 110 μm; And equal to about 100 μm; less than or equal to about 90 μm; less than or equal to about 80 μm; less than or equal to about 75 μm; less than or equal to about 70 μm; less than or equal to about 60 μm; less than or equal to about 50 μm; Or equal to about 40 μm; less than or equal to about 30 μm; less than or equal to about 20 μm; less than or equal to about 10 μm; or less than or equal to about 5 μm. Alternatively, the fine lines can have any of the following widths: greater than about 200 μm; greater than about 150 μm; greater than about 75 μm; greater than about 75 μm; greater than about 50 μm; greater than about 20 μm; or greater than about 10 μm. Alternatively, the fine lines may have any of the following widths: about 0.1 to 200 μm; about 1 to 150 μm; about 1 to 100 μm; about 20 to 100 μm; or about 5 to 75 μm. Thin wires can be used in PCBs and other electrical components, such as flat screen displays.
通常,可在至少一個或兩個光工具上施加壓力,此後該(等)光工具向液態光聚合物施加壓力。 Typically, pressure can be applied to at least one or two of the optical tools, after which the optical tool applies pressure to the liquid photopolymer.
該裝置亦可包含校準構件以校準自輻射源發出之輻射。 The device may also include a calibration member to calibrate the radiation emitted from the radiation source.
在具體實施例中,輻射源可包含LED及/或雷射光源或DMD數位成像器件。較佳地,輻射源可能能夠發射UV輻射。 In a particular embodiment, the radiation source can comprise an LED and/or a laser source or a DMD digital imaging device. Preferably, the source of radiation may be capable of emitting UV radiation.
該裝置亦可包含定位構件以便將至少一個光工具定位在基板上。 The device can also include a positioning member to position the at least one light tool on the substrate.
本發明之裝置亦具有以下優勢:具有小佔據面積。由此使得該裝置具有極大適應性。舉例而言,該裝置可具有約6 m×2 m或甚至更小之佔據面積。 The device of the invention also has the advantage of having a small footprint. This makes the device extremely adaptable. For example, the device can have an footprint of about 6 m x 2 m or even less.
本發明之裝置亦可具有低功率消耗,因為對於濕膜不需要固化製程(即無預先乾燥步驟)。該裝置因此可在低功率 下操作,諸如小於約10 kW或較佳小於約5 kW。相比之下,先前技術在大於約100 kW之區域內操作。因此,本發明之設備可提供約50倍或甚至約100倍之能量消耗改良。因此該設備可具有較低環境影響。 The apparatus of the present invention can also have low power consumption because no curing process is required for the wet film (i.e., without a pre-drying step). The device is therefore available at low power Lower operation, such as less than about 10 kW or preferably less than about 5 kW. In contrast, prior art operations operate in areas greater than about 100 kW. Thus, the apparatus of the present invention can provide about 50 times or even about 100 times the energy consumption improvement. Therefore the device can have a lower environmental impact.
本發明之裝置亦可在高產能下操作,諸如每小時約100至500片,或通常為每小時約360片。 The apparatus of the present invention can also be operated at high throughput, such as from about 100 to 500 sheets per hour, or typically about 360 sheets per hour.
該裝置亦可為完全自動化的,且因此需要最少處理。該裝置亦易於維護。 The device can also be fully automated and therefore requires minimal processing. The device is also easy to maintain.
根據本發明之第七態樣,提供用於對基板進行光成像之裝置,該裝置包含:至少一個光工具,其能夠定位至具有披覆層之基板之至少一個側面上之液態光聚合物上;軋輥,其能夠向具有披覆層之基板上之液態光聚合物施加壓力以形成光聚合物薄膜;以及輻射源,其能夠固化液態光聚合物。 According to a seventh aspect of the invention, there is provided apparatus for photo imaging a substrate, the apparatus comprising: at least one optical tool capable of positioning onto a liquid photopolymer on at least one side of a substrate having a cladding layer a roll capable of applying pressure to a liquid photopolymer on a substrate having a coating to form a photopolymer film; and a radiation source capable of curing the liquid photopolymer.
該裝置不包含用於在將膜施加至輻射源之前預先乾燥濕光聚合物膜之裝置。 The device does not include means for pre-drying the wet photopolymer film prior to applying the film to the radiation source.
根據本發明之第八態樣,提供一種用於在基板上製造跡線及/或電路之方法,該方法包括:提供基板;在該基板之至少一個側面上提供噴墨沈積物,該等噴墨沈積物包含導電粒子;在包含噴墨沈積物之基板之至少一個側面上沈積液態光聚合物; 將光工具定位至該基板之至少一個側面上之液態光聚合物上;向所沈積之液態光聚合物施加壓力,以形成厚度小於約178 μm(0.007吋)之光聚合物膜;以及向該液態光聚合物施加輻射以便在透過該光工具固化曝光之區域中的該光聚合物。 According to an eighth aspect of the present invention, a method for fabricating a trace and/or a circuit on a substrate, the method comprising: providing a substrate; providing inkjet deposits on at least one side of the substrate, the spray The ink deposit comprises conductive particles; depositing a liquid photopolymer on at least one side of the substrate comprising the inkjet deposit; Positioning the optical tool onto the liquid photopolymer on at least one side of the substrate; applying pressure to the deposited liquid photopolymer to form a photopolymer film having a thickness of less than about 178 μm (0.007 Å); The liquid photopolymer applies radiation to the photopolymer in the area exposed by the light tool.
通常,噴墨沈積物可包含導電粒子,諸如銀、金及/或銅,或用於起始銅或鎳之無電電鍍之晶種材料,如鈀與錫之混合物。 Typically, the inkjet deposits may comprise conductive particles such as silver, gold and/or copper, or seed materials for the initial electroless plating of copper or nickel, such as a mixture of palladium and tin.
在本發明中,在用例如UV輻射照射濕光聚合物膜之前亦不進行乾燥步驟(即預先乾燥步驟)。 In the present invention, the drying step (i.e., the pre-drying step) is also not performed before the wet photopolymer film is irradiated with, for example, UV radiation.
噴墨沈積物可具有約50 μm至500 μm、50 μm至250 μm、75 μm至150 μm或通常約100 μm之寬度。因此,可使用本發明中所述之光成像概念來改變噴墨沈積物。舉例而言,噴墨沈積物可形成在例如塑膠片基板上。噴墨沈積物可在塑膠片上形成近似所需之跡線。通常,隨後可使用本發明中所述之光成像概念在噴墨沈積物內形成至少一個或多個跡線。 The inkjet deposits can have a width of from about 50 μm to 500 μm, from 50 μm to 250 μm, from 75 μm to 150 μm, or typically from about 100 μm. Thus, the optical imaging concept described in the present invention can be used to modify inkjet deposits. For example, an inkjet deposit can be formed on, for example, a plastic sheet substrate. The inkjet deposits can form approximately the desired traces on the plastic sheet. Typically, at least one or more traces are subsequently formed within the inkjet deposit using the photoimaging concept described in this disclosure.
根據本發明之第九態樣,提供用於對基板進行光成像之裝置,該裝置包含:至少一個光工具,其能夠定位至具有披覆層之基板之至少一個側面上之液態光聚合物上;軋輥,其能夠向具有披覆層之基板上之液態光聚合物施加壓力以形成光聚合物薄膜;以及 輻射源,其能夠固化液態光聚合物。 According to a ninth aspect of the invention, there is provided apparatus for photo imaging a substrate, the apparatus comprising: at least one optical tool capable of positioning onto a liquid photopolymer on at least one side of a substrate having a cladding layer a roll capable of applying pressure to a liquid photopolymer on a substrate having a coating to form a photopolymer film; A source of radiation that is capable of curing a liquid photopolymer.
在本發明中,在用例如UV輻射照射濕光聚合物膜之前亦不進行乾燥步驟(即預先乾燥步驟)。 In the present invention, the drying step (i.e., the pre-drying step) is also not performed before the wet photopolymer film is irradiated with, for example, UV radiation.
現將參考附圖僅藉由舉例方式來描述本發明之實施例。 Embodiments of the present invention will now be described by way of example only with reference to the accompanying drawings.
圖1為本發明之三層結構10之剖面側視圖,該三層結構能夠經成像,其中存在底層12(其為基板)、中間層14(其為濕UV可固化光聚合物)及頂層16(其為透明塑膠或光工具,或較佳為已塗佈保護層之光工具或塑膠,該保護層充當脫模塗層且亦提供化學物質及水分抗性)。 1 is a cross-sectional side view of a three layer structure 10 of the present invention capable of being imaged, wherein a bottom layer 12 (which is a substrate), an intermediate layer 14 (which is a wet UV curable photopolymer), and a top layer 16 are present. (It is a transparent plastic or optical tool, or preferably a light tool or plastic that has been coated with a protective layer that acts as a release coating and also provides chemical and moisture resistance).
如圖2中所示,本發明允許形成密封囊20。密封囊20包含在液態UV光聚合物囊22周圍形成之密封邊緣24。 As shown in Figure 2, the present invention allows for the formation of a sealed bladder 20. The sealed bladder 20 contains a sealing edge 24 formed around the liquid UV photopolymer bladder 22.
圖3為根據本發明之一個實施例之層壓結構(一般指定為100)之剖面側視圖。層壓結構100在兩個側面上均包含基板110(諸如介電層)及金屬披覆層112。(雖然以下描述係針對金屬披覆層,但應注意,類似製程可用於非金屬披覆層)。在層壓結構100之頂部存在液態光聚合物層114。因此光聚合物層114為濕的。液態光聚合物層114具有約5 μm之厚度。雖然圖3中未顯示,但光聚合物層114可施加至層壓結構100之兩個側面上。 3 is a cross-sectional side view of a laminate structure (generally designated 100) in accordance with one embodiment of the present invention. The laminate structure 100 includes a substrate 110 (such as a dielectric layer) and a metal cladding layer 112 on both sides. (Although the following description is for metal cladding layers, it should be noted that a similar process can be used for non-metallic cladding layers). A liquid photopolymer layer 114 is present on top of the laminate structure 100. The photopolymer layer 114 is therefore wet. The liquid photopolymer layer 114 has a thickness of about 5 μm. Although not shown in FIG. 3, photopolymer layer 114 can be applied to both sides of laminate structure 100.
首先使用任何適合之技術,以實質上均勻且連續或至少實質上連續之方式將光聚合物層114沈積至層壓結構100上。舉例而言,使用噴霧、刷子、軋輥及/或浸漬塗佈系統來施加光聚合物層114。在本發明中,在用例如UV輻射 照射濕光聚合物膜之前不進行乾燥步驟(即預先乾燥步驟)。 The photopolymer layer 114 is first deposited onto the laminate structure 100 in a substantially uniform and continuous or at least substantially continuous manner using any suitable technique. For example, the photopolymer layer 114 is applied using a spray, brush, roll, and/or dip coating system. In the present invention, for example, using UV radiation The drying step (i.e., the pre-drying step) is not performed before the wet photopolymer film is irradiated.
一旦光聚合物層114已經施加至層壓結構100上,即將光工具116施加至光聚合物層114上。光工具116為所需電路之負(或正)像,且允許光通過光工具116之一些部分而不通過其他部分。光工具係由可撓性塑膠材料或可能由玻璃或甚至可能由有機玻璃製造。 Once the photopolymer layer 114 has been applied to the laminate structure 100, the optical tool 116 is applied to the photopolymer layer 114. The light tool 116 is a negative (or positive) image of the desired circuit and allows light to pass through portions of the light tool 116 without passing through other portions. Optical tools are made of flexible plastic materials or possibly glass or even plexiglass.
圖4表示光工具116經施加至層壓結構100上。一旦光工具116已經施加至包含液態光聚合物114之層壓結構100上,即使用壓縮系統來展開及/或擠壓光聚合物114,以便在光工具116與基板披覆層112之間以約5 μm之實質上均勻之厚度均勻地展佈光聚合物114。壓縮系統亦確保無空氣且因此無氧氣截留在光聚合物114下面。舉例而言,基於軋輥之系統施加壓力且用於展佈光聚合物114。因此,橡膠圓柱輥可用於展佈光聚合物114。此舉可在層壓結構100之兩個側面上進行。由此克服了對包括抛物面鏡之複雜光系統的需要,因為消除了所有空氣及氧氣。 FIG. 4 shows the optical tool 116 being applied to the laminate structure 100. Once the light tool 116 has been applied to the laminate structure 100 comprising the liquid photopolymer 114, a compression system is used to unroll and/or extrude the photopolymer 114 so that between the light tool 116 and the substrate cladding layer 112 The photopolymer 114 is uniformly spread over a substantially uniform thickness of about 5 μm. The compression system also ensures that there is no air and therefore no oxygen is trapped underneath the photopolymer 114. For example, a roll based system applies pressure and is used to spread photopolymer 114. Therefore, a rubber cylindrical roller can be used to spread the photopolymer 114. This can be done on both sides of the laminate structure 100. This overcomes the need for a complex optical system including a parabolic mirror because all air and oxygen are eliminated.
如圖4中所示,使用UV輻射來使已曝光之液態光聚合物114聚合及/或硬化及/或凝固。UV輻射具有約200至400 nm之波長,且具有與固化已曝光之液態光聚合物114相匹配之強度。可使用任何適合之UV光源,但UV LED尤其適合,因為其產生極少量之熱,具有較長燈壽命,立即啟動,實質上無功率輸出減退,低維護,且可產生高水準之光強度。因此,LED可用於在便宜的光成像製程中印刷細 線、正方形、螺旋形、圓形或其他幾何及非幾何形狀。或者,使用雷射光源或DMD數位成像單元。應注意的顯著優勢在於不需要部分固化之乾光聚合物膜(例如Riston,商標,DuPont),因此其顯著減少成像製程期間的任何線生長,從而得到顯著提高之解析度。因此,藉由克服該需要而不存在經部分固化之乾膜或經預先乾燥之基於溶劑之濕抗蝕劑來增加本發明方法之解析度。 As shown in Figure 4, the exposed liquid photopolymer 114 is polymerized and/or hardened and/or solidified using UV radiation. The UV radiation has a wavelength of about 200 to 400 nm and has a strength that matches the cured exposed photopolymer 114. Any suitable UV source can be used, but UV LEDs are particularly suitable because they generate a very small amount of heat, have a long lamp life, are immediately activated, have substantially no power output reduction, are low maintenance, and can produce high levels of light intensity. Therefore, LEDs can be used to print fine prints in inexpensive photoimaging processes. Line, square, spiral, circular or other geometric and non-geometric shapes. Alternatively, use a laser source or a DMD digital imaging unit. A significant advantage that should be noted is that a partially cured dry photopolymer film (e.g., Riston, trademark, DuPont) is not required, so it significantly reduces any line growth during the imaging process, resulting in significantly improved resolution. Thus, the resolution of the process of the invention is increased by overcoming this need without the presence of a partially cured dry film or a pre-dried solvent-based wet resist.
圖5為本發明之光成像裝置之圖示,其顯示層壓結構100經實質上垂直向上引入該裝置中,其中光工具116經施加至層壓結構100之兩個側面上。光工具116處於緊張狀態且在軋輥118、120周圍延伸。光工具116宜對光聚合物114具有表面吸引力,且因此可經由弱互相作用力(諸如凡得瓦爾力(van der Waals force)及/或靜電力)而『自黏』至光聚合物114。光工具116亦可包含保護性非黏性層,該保護性非黏性層有助於一旦已進行成像即自層壓結構100移除(即剝離)光工具116。 5 is an illustration of a light imaging device of the present invention showing the laminate structure 100 introduced into the device substantially vertically upwardly with the optical tool 116 applied to both sides of the laminate structure 100. The light tool 116 is in tension and extends around the rolls 118, 120. The light tool 116 preferably has a surface attractive force to the photopolymer 114, and thus can be "self-adhesive" to the photopolymer 114 via weak inter-forces such as van der Waals force and/or electrostatic forces. . The light tool 116 can also include a protective non-stick layer that facilitates removal (ie, stripping) of the light tool 116 from the laminate structure 100 once it has been imaged.
雖然未顯示,但使用對準系統來準確地使光工具116在層壓結構之兩個側面上對直。 Although not shown, an alignment system is used to accurately align the light tool 116 on both sides of the laminate structure.
光成像裝置可用於每十秒加工約一片層壓結構100。一旦已進行光成像,即使用任何適合之機械構件自層壓結構100移除光工具116。光成像製程極快,因為無空氣及氧氣截留在液態光聚合物114下。因此提供小於約5秒或較佳小於1秒之針對光聚合物114之乾燥時間。 The light imaging device can be used to process about one sheet of laminate structure 100 every ten seconds. Once the photo-imaging has been performed, the optical tool 116 is removed from the laminate structure 100 using any suitable mechanical component. The photoimaging process is extremely fast because no air and oxygen are trapped under the liquid photopolymer 114. Thus, a drying time for the photopolymer 114 of less than about 5 seconds or preferably less than 1 second is provided.
在光成像製程之後,使用例如鹼水溶液經由洗滌程序移 除未曝露於UV輻射之液態光聚合物114。隨後可使用標準化學蝕刻製程。舉例而言,可使用酸或鹼來產生含有所需金屬(例如銅)電路經聚合之光聚合物覆蓋之介電基板。隨後可移除聚合之光聚合物,產生具有所需之導電電路之基板。 After the photoimaging process, using a saline solution, for example, via a washing procedure Except for the liquid photopolymer 114 which is not exposed to UV radiation. A standard chemical etching process can then be used. For example, an acid or base can be used to create a dielectric substrate that is coated with a photopolymer of a desired metal (eg, copper) circuit. The polymerized photopolymer can then be removed to produce a substrate having the desired conductive circuitry.
本發明中所述之裝置亦可完全容納在小型潔淨室中,因此在光成像製程中提供顯著之成本節約。 The device described in the present invention can also be completely housed in a small clean room, thus providing significant cost savings in the photoimaging process.
使用本發明中所述之方法獲得適用於電路之高清晰度細線及PCMI中所用之形狀,諸如正方形、螺旋形、圓形或其他幾何及非幾何形狀。細線、正方形、螺旋形、圓形或其他幾何及非幾何形狀具有任何以下寬度:小於或等於約200 μm;小於或等於約150 μm;小於或等於約140 μm;小於或等於約130 μm;小於或等於約120 μm;小於或等於約110 μm;小於或等於約100 μm;小於或等於約90 μm;小於或等於約80 μm;小於或等於約75 μm;小於或等於約70 μm;小於或等於約60 μm;小於或等於約50 μm;小於或等於約40 μm;小於或等於約30 μm;小於或等於約20 μm;小於或等於約10 μm;或者小於或等於約5 μm。或者,細線具有任何以下寬度:大於約200 μm;大於約150 μm;大於約100 μm;大於約75 μm;大於約50 μm;大於約20 μm;或大於約10 μm。或者,細線具有任何以下寬度:約0.1至200 μm;約1至150 μm;約1至100 μm;約20至100 μm;或約5至75 μm。 Shapes used in high definition fine lines and PCMI suitable for circuits, such as square, spiral, circular or other geometric and non-geometric shapes, are obtained using the methods described herein. Thin lines, squares, spirals, circles, or other geometric and non-geometric shapes have any of the following widths: less than or equal to about 200 μm; less than or equal to about 150 μm; less than or equal to about 140 μm; less than or equal to about 130 μm; less than Or equal to about 120 μm; less than or equal to about 110 μm; less than or equal to about 100 μm; less than or equal to about 90 μm; less than or equal to about 80 μm; less than or equal to about 75 μm; less than or equal to about 70 μm; Equal to about 60 μm; less than or equal to about 50 μm; less than or equal to about 40 μm; less than or equal to about 30 μm; less than or equal to about 20 μm; less than or equal to about 10 μm; or less than or equal to about 5 μm. Alternatively, the fine lines have any of the following widths: greater than about 200 μm; greater than about 150 μm; greater than about 75 μm; greater than about 50 μm; greater than about 20 μm; greater than about 10 μm. Alternatively, the fine lines have any of the following widths: about 0.1 to 200 μm; about 1 to 150 μm; about 1 to 100 μm; about 20 to 100 μm; or about 5 to 75 μm.
細線用於PCB及其他電組件中,諸如平面螢幕顯示器。 Thin wires are used in PCBs and other electrical components, such as flat screen displays.
本發明可用於光化學加工業(PCMI)以及電子工業中。 The invention can be used in the photochemical processing industry (PCMI) as well as in the electronics industry.
光成像亦可藉助於能夠準確地定位第一運載元件及第二運載元件之定位裝置,其中第一運載元件上之定位球容納在第二元件上之環形元件中。由此允許極其準確地定位光工具。 The light imaging can also be by means of a positioning device capable of accurately positioning the first carrier element and the second carrier element, wherein the positioning ball on the first carrier element is received in the ring element on the second element. This allows extremely accurate positioning of the light tool.
圖6a及圖6b為本發明之替代性光成像製程之圖示。圖6a表示來自噴墨之墨水沈積物。噴墨沈積物一般指定為200。噴墨沈積物200包含導電粒子,如銀、金及/或銅,或用於起始銅或鎳之無電電鍍之晶種材料,如鈀與錫之混合物。如圖6a中所示,由於墨水係以一系列小液滴來沈積,故噴墨沈積物200不具有筆直之側面,而具有一系列波狀外邊緣202。噴墨沈積物200具有約100 μm之寬度『d』。使用該等噴墨沈積物200難以形成用於電路之細跡線。然而,可使用本發明中所述之光成像概念來改變噴墨沈積物200。舉例而言,可在塑膠片上形成噴墨沈積物200。使用噴墨沈積物200在塑膠片上形成近似所需之導電跡線。隨後使用上述製程來改良所形成之跡線之品質。將上述光聚合物施加於塑膠片上。隨後將光工具施加至塑膠片上,依序施加壓力及輻射。如圖6b中所示,所應用之光成像可用於在噴墨沈積物200內產生改良之跡線210。舉例而言,若噴墨沈積物200具有約100 μm之寬度『d』,則可在先前由噴墨沈積物形成之單一跡線內形成多個單獨的高解析度跡線。舉例而言,可在100 μm墨水沈積物跡線內形成4個跡線。 6a and 6b are diagrams of an alternative photoimaging process of the present invention. Figure 6a shows an ink deposit from an ink jet. The inkjet deposit is generally designated as 200. The inkjet deposit 200 comprises conductive particles such as silver, gold and/or copper, or a seed material for the initial electroless plating of copper or nickel, such as a mixture of palladium and tin. As shown in Figure 6a, since the ink is deposited as a series of small droplets, the inkjet deposit 200 does not have a straight side but a series of undulating outer edges 202. The inkjet deposit 200 has a width "d" of about 100 μm. The use of such inkjet deposits 200 makes it difficult to form fine traces for the circuit. However, the inkjet deposits 200 can be altered using the photoimaging concepts described in this disclosure. For example, an inkjet deposit 200 can be formed on a plastic sheet. The inkjet deposit 200 is used to form approximately the desired conductive traces on the plastic sheet. The above process is then used to improve the quality of the traces formed. The photopolymer described above is applied to a plastic sheet. The light tool is then applied to the plastic sheet, applying pressure and radiation in sequence. As shown in Figure 6b, the applied photoimaging can be used to create improved traces 210 within the inkjet deposits 200. For example, if the inkjet deposit 200 has a width "d" of about 100 [mu]m, a plurality of individual high resolution traces can be formed in a single trace previously formed from inkjet deposits. For example, four traces can be formed within a 100 μm ink deposit trace.
圖7a及圖7b為現行先前技術製程與本發明製程的比較。圖7a係關於先前技術製程,其一般指定為300。圖7a顯示存在銅面板310及處於銅面板310上之厚度為約35μm之乾膜層312、厚度為約25μm之保護性邁拉層314,以及與光工具318一起使用之厚度為約9μm之乳液保護膜316。亦顯示所形成之細線或跡線影像320。圖7b係關於本發明製程,其一般指定為400。圖7b顯示存在銅面板410、厚度為約5μm之濕光聚合物層412以及與光工具416一起使用之厚度為約3μm之超薄保護膜414。亦顯示所形成之細線或跡線影像418。圖7a及圖7b清楚地顯示本發明製程提供小得多的深度,光成像必須通過該深度進行。如所示,先前技術製程300通過約69μm之總厚度成像,而本發明之製程400通過約8μm之總厚度成像。亦不需要邁拉層。 Figures 7a and 7b show a comparison of the prior art process and the process of the present invention. Figure 7a relates to prior art processes, which are generally designated 300. Figure 7a shows the presence of a copper panel 310 and a dry film layer 312 having a thickness of about 35 μm on the copper panel 310, a protective Mylar layer 314 having a thickness of about 25 μm, and an emulsion having a thickness of about 9 μm for use with the optical tool 318. Protective film 316. The resulting thin line or trace image 320 is also displayed. Figure 7b relates to the process of the invention, which is generally designated 400. Figure 7b shows the presence of a copper panel 410, a wet photopolymer layer 412 having a thickness of about 5 [mu]m, and an ultra-thin protective film 414 having a thickness of about 3 [mu]m for use with the optical tool 416. The resulting thin line or trace image 418 is also displayed. Figures 7a and 7b clearly show that the process of the present invention provides a much smaller depth through which photoimaging must be performed. As shown, prior art process 300 is imaged by a total thickness of about 69 [mu]m, while process 400 of the present invention is imaged by a total thickness of about 8 [mu]m. There is no need for the Myra layer.
圖8a及圖8b說明本發明與線生長有關之另一個優勢。在作為先前技術製程300之圖8a中顯示存在約14.5μm之大量線生長A,而在本發明製程400中,存在約0.84μm之較少線生長B。本發明中之較少線生長係藉由進行光成像所通過之深度大大減小且由此使陰影面積與圖8a中較大深度上之陰影面積相比顯著減少來實現。應注意,圖8a及圖8b均與20μm跡線之形成的比較有關,其中θ=6°。 Figures 8a and 8b illustrate another advantage of the present invention in relation to wire growth. In Figure 8a, which is a prior art process 300, a large amount of line growth A of about 14.5 [mu]m is shown, while in the process 400 of the present invention, there is less line growth B of about 0.84 [mu]m. The less linear growth in the present invention is achieved by the depth through which photoimaging is performed is greatly reduced and thereby the shadow area is significantly reduced compared to the shaded area over a greater depth in Figure 8a. It should be noted that both Figures 8a and 8b are related to the comparison of the formation of 20 μm traces, where θ = 6°.
圖9a及圖9b說明本發明與固化之線寬度有關之又一個優勢,其中分別使用光源350、450。圖9a及圖9b均與20μm間距之形成的比較有關,其中θ=6°。在先前技術製程300中,所得之固化之線寬度為49μm(表示線生長為145%), 而在本發明製程400中,所得之固化之線寬度為21.7 μm(表示線生長僅為8%)。 Figures 9a and 9b illustrate yet another advantage of the present invention in relation to the width of the cured line wherein light sources 350, 450 are used, respectively. Figures 9a and 9b are each related to the comparison of the formation of a 20 μm pitch, where θ = 6°. In prior art process 300, the resulting cured line width was 49 μm (indicating a line growth of 145%), In the process 400 of the present invention, the resulting cured line width is 21.7 μm (indicating that the line growth is only 8%).
雖然上文已描述了本發明之特定實施例,但應瞭解,偏離所描述之實施例仍可在本發明之範疇內。舉例而言,可使用任何適合類型之基板。披覆層亦可為金屬的或非金屬的。此外,可使用任何適合之液態光聚合物或其組合。亦可使用任何機械構件來向所沈積之液態光聚合物施加壓力,以便形成下面不截留空氣及氧氣之材料薄膜。所用之輻射可具有能夠使液態光聚合物固化之任何適當波長。 Although specific embodiments of the invention have been described above, it will be appreciated that the embodiments described herein are still within the scope of the invention. For example, any suitable type of substrate can be used. The cladding layer can also be metallic or non-metallic. In addition, any suitable liquid photopolymer or combination thereof can be used. Any mechanical component can also be used to apply pressure to the deposited liquid photopolymer to form a film of material below that does not trap air and oxygen. The radiation used can have any suitable wavelength that is capable of curing the liquid photopolymer.
10‧‧‧本發明之三層結構 10‧‧‧Three-layer structure of the invention
12‧‧‧底層 12‧‧‧ bottom layer
14‧‧‧中間層 14‧‧‧Intermediate
16‧‧‧頂層 16‧‧‧ top
20‧‧‧密封囊 20‧‧‧ sealed pouch
22‧‧‧液態UV光聚合物囊 22‧‧‧ Liquid UV photopolymer capsule
24‧‧‧密封邊緣 24‧‧‧ Sealed edge
100‧‧‧層壓結構 100‧‧‧Laminated structure
110‧‧‧基板 110‧‧‧Substrate
112‧‧‧金屬披覆層/基板披覆層 112‧‧‧Metal cladding/substrate coating
114‧‧‧液態光聚合物層/液態光聚合物 114‧‧‧Liquid photopolymer layer / liquid photopolymer
116‧‧‧光工具 116‧‧‧Light Tools
118‧‧‧軋輥 118‧‧‧ Rolls
120‧‧‧軋輥 120‧‧‧roll
200‧‧‧噴墨沈積物 200‧‧‧Inkjet deposits
202‧‧‧波狀外邊緣 202‧‧‧ wavy outer edge
210‧‧‧跡線 210‧‧‧ Traces
300‧‧‧先前技術製程 300‧‧‧Previous technical process
310‧‧‧銅面板 310‧‧‧copper panel
312‧‧‧乾膜層 312‧‧‧ dry film
314‧‧‧保護性邁拉層 314‧‧‧Protective Myra
316‧‧‧乳液保護膜 316‧‧‧ Emulsion protective film
318‧‧‧光工具 318‧‧‧Light tools
320‧‧‧細線或跡線影像 320‧‧‧ Thin line or trace image
350‧‧‧光源 350‧‧‧Light source
400‧‧‧本發明製程 400‧‧‧Process of the invention
410‧‧‧銅面板 410‧‧‧copper panel
412‧‧‧濕光聚合物層 412‧‧‧wet light polymer layer
414‧‧‧超薄保護膜 414‧‧‧Ultra-thin protective film
416‧‧‧光工具 416‧‧‧Light Tools
418‧‧‧細線或跡線影像 418‧‧‧ Thin line or trace image
450‧‧‧光源 450‧‧‧Light source
圖1為本發明之一個實施例之三層結構的剖面側視圖;圖2為本發明之一個實施例之密封囊的視圖;圖3為本發明之一個實施例之上面沈積有濕光聚合物層之基板的剖面側視圖;圖4為圖3中所示之具有濕光聚合物層之基板的剖面側視圖,其中在本發明之一個實施例之光成像製程中使用光工具;圖5為光成像製程中之一個加工步驟的視圖,其中在本發明之一個實施例之光成像製程期間將光工具施加至基板之兩個側面上;圖6a及圖6b為本發明之另一個實施例之替代性光成像製程的圖示;圖7a為先前技術之光成像製程的剖視圖;圖7b為本發明之一個實施例之光成像製程的剖視圖; 圖8a為先前技術之光成像製程的剖視圖,其顯示生長發生;圖8b為本發明之一個實施例之光成像製程的剖視圖,其顯示生長發生;圖9a為先前技術之光成像製程的剖視圖,其顯示固化之線寬度;圖9b為本發明之一個實施例之光成像製程的剖視圖,其顯示固化之線寬度。 1 is a cross-sectional side view of a three-layer structure according to an embodiment of the present invention; FIG. 2 is a view of a sealing capsule according to an embodiment of the present invention; and FIG. 3 is a wet photopolymer deposited thereon according to an embodiment of the present invention. A cross-sectional side view of a substrate of the layer; FIG. 4 is a cross-sectional side view of the substrate having the wet photopolymer layer shown in FIG. 3, wherein a light tool is used in the photoimaging process of one embodiment of the present invention; A view of a processing step in a photoimaging process in which a light tool is applied to both sides of a substrate during a photoimaging process of one embodiment of the invention; FIGS. 6a and 6b are another embodiment of the present invention Figure 7a is a cross-sectional view of a prior art photoimaging process; Figure 7b is a cross-sectional view of a photoimaging process of one embodiment of the present invention; Figure 8a is a cross-sectional view of a prior art photoimaging process showing growth occurrence; Figure 8b is a cross-sectional view of a photoimaging process of one embodiment of the present invention showing growth occurrence; Figure 9a is a cross-sectional view of a prior art photoimaging process, It shows the width of the cured line; Figure 9b is a cross-sectional view of a photoimageable process of one embodiment of the invention showing the line width of the cure.
100‧‧‧層壓結構 100‧‧‧Laminated structure
114‧‧‧液態光聚合物層/液態光聚合物 114‧‧‧Liquid photopolymer layer / liquid photopolymer
116‧‧‧光工具 116‧‧‧Light tools
118‧‧‧軋輥 118‧‧‧ Rolls
120‧‧‧軋輥 120‧‧‧roll
Claims (28)
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Citations (2)
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WO2010007405A1 (en) * | 2008-07-18 | 2010-01-21 | Rainbow Technology Systems Limited | Method for photoimaging a substrate |
WO2012069807A2 (en) * | 2010-11-23 | 2012-05-31 | Rainbow Technology Systems Limited | Photoimaging |
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WO2010007405A1 (en) * | 2008-07-18 | 2010-01-21 | Rainbow Technology Systems Limited | Method for photoimaging a substrate |
WO2012069807A2 (en) * | 2010-11-23 | 2012-05-31 | Rainbow Technology Systems Limited | Photoimaging |
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