TWI593960B - Method for inspecting large scale integrated circuit - Google Patents

Method for inspecting large scale integrated circuit Download PDF

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TWI593960B
TWI593960B TW105118280A TW105118280A TWI593960B TW I593960 B TWI593960 B TW I593960B TW 105118280 A TW105118280 A TW 105118280A TW 105118280 A TW105118280 A TW 105118280A TW I593960 B TWI593960 B TW I593960B
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detection
detecting
image
integrated circuit
density integrated
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TW105118280A
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TW201743053A (en
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金亨哲
金亨在
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嘉必思股份有限公司
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Description

高密度積體電路板的檢測方法 High-density integrated circuit board detection method

本發明涉及一種高密度積體電路板的檢測裝置及其檢測方法,具體地,涉及一種基於多個旋轉截面圖像的高密度積體電路板的檢測裝置及其檢測方法。 The present invention relates to a high-density integrated circuit board detecting apparatus and a detecting method thereof, and more particularly to a high-density integrated circuit board detecting apparatus based on a plurality of rotating sectional images and a detecting method thereof.

X射線檢測利用基於透射厚度的圖像的對比度,能夠應用於多種工業產品的非破壞性檢測。例如,X射線檢測能夠用於檢測電子基板、晶片、電池或食品的不良或是否存在異物。為進行檢測,需要決定檢測部位,並且需要使X射線透射檢測部位,以獲得相應部位的X射線透射圖像。並且,可根據這樣的圖像判斷出檢測對象是否不良。因此,能夠獲得檢測部位的準確的透射圖像是檢測的基本條件。不過,在一般情況下,X射線能夠透射除鉛等部分遮罩材料以外的大部分物質,因此具有不受檢測對象的材料限制的優點。但是,當例如像高密度積體電路板的凸塊那樣檢測部位密集地配置時,則難以採用一般的檢測方法。如果因各檢測部位的密集度而無法獲得可相互區分的清晰的圖像,則存在無法進行X射線檢測或者導致檢測的效率低下的問題。 X-ray inspection utilizes the contrast of images based on transmitted thickness and can be applied to non-destructive inspection of a variety of industrial products. For example, X-ray inspection can be used to detect defects in electronic substrates, wafers, batteries, or foods, or whether foreign matter is present. In order to perform the detection, it is necessary to determine the detection site, and it is necessary to transmit the X-ray to the detection site to obtain an X-ray transmission image of the corresponding portion. Further, it is possible to determine whether or not the detection target is defective based on such an image. Therefore, it is possible to obtain an accurate transmission image of the detection site as a basic condition for detection. However, in general, X-rays are capable of transmitting most substances other than a part of the masking material such as lead, and therefore have an advantage that they are not restricted by the material of the object to be detected. However, when the detection portions are densely arranged, for example, like the bumps of the high-density integrated circuit board, it is difficult to adopt a general detection method. If a clear image that can be distinguished from each other cannot be obtained due to the density of each detection portion, there is a problem that X-ray detection cannot be performed or the efficiency of detection is lowered.

本發明是為了解決所述問題而提出的,具有以下目的。 The present invention has been made to solve the above problems and has the following objects.

本發明的目的在於提供一種可對高密度積體電路板的倒裝晶片或記憶體晶片的焊接凸塊進行檢測的高密度積體電路板的檢測裝置及其檢測方法。 SUMMARY OF THE INVENTION An object of the present invention is to provide a high-density integrated circuit board detecting device capable of detecting a flip chip of a high-density integrated circuit board or a solder bump of a memory chip, and a detecting method thereof.

根據本發明的適當的實施方式,高密度積體電路板的檢測裝置包括:X射線管,向檢測對象照射X射線;探測器,藉由探測透射了檢測對象的X射線來形成圖像;檢測托盤,能夠在將檢測對象移動到檢測位置的同時進行旋轉;以及定位軌道,對檢測對象在探測器與X射線管之間進行定位,且呈圓形延伸,所述探測器配置為能夠沿著定位軌道移動,或者在所述軌道的不同位置配置有至少兩個。 According to a preferred embodiment of the present invention, the detecting device of the high-density integrated circuit board includes: an X-ray tube that irradiates the X-ray to the detecting object; and a detector that forms an image by detecting X-rays transmitted through the detecting object; a tray capable of rotating while moving the detection object to the detection position; and positioning the track, positioning the detection object between the detector and the X-ray tube, and extending in a circle, the detector being configured to be capable of The positioning track moves, or at least two are arranged at different positions of the track.

根據本發明的另一個適當的實施方式,X射線管以對檢測對象保持0.01μm至30μm的空間解析度的方式相對於檢測托盤配置。 According to another suitable embodiment of the present invention, the X-ray tube is disposed relative to the detection tray in such a manner as to maintain a spatial resolution of 0.01 μm to 30 μm to the object to be detected.

根據本發明的另一個適當的實施方式,利用X射線的高密度積體電路的檢測方法包括:藉由將所述電路板分割成多個區域來形成分割區域的步驟;向分別位於所述分割區域的檢測對象以垂直方向照射X射線的步驟;藉由垂直方向的所述X射線獲得一次平面圖像的步驟;根據所述一次平面圖像將檢測對象分類為正常、不良或可疑對象的步驟;針對被分類為可疑對象的所述檢測對象獲得多個旋轉截面圖像的步驟;根據所述多個旋轉截面圖像來生成合成圖像的步驟;以及根據所述合成圖像進行二次圖像檢測的步驟。 According to another suitable embodiment of the present invention, a method for detecting a high-density integrated circuit using X-rays includes the steps of forming a divided region by dividing the circuit board into a plurality of regions; a step of detecting an X-ray in a vertical direction by a detection object of a region; a step of obtaining a planar image by the X-ray in a vertical direction; and a step of classifying the detection object as a normal, bad or suspicious object according to the primary planar image a step of obtaining a plurality of rotated cross-sectional images for the detection object classified as a suspicious object; a step of generating a composite image based on the plurality of rotated cross-sectional images; and performing a quadratic map according to the composite image Like the steps of detection.

根據本發明的又一個適當的實施方式,為獲得所述多個旋轉截面圖像,使探測器以相對於垂直方向成1至89度的角度的方式進行旋轉,或者,將探測器配置在成1至89度的角度的位置。 According to still another suitable embodiment of the present invention, in order to obtain the plurality of rotating sectional images, the detector is rotated at an angle of 1 to 89 degrees with respect to the vertical direction, or the detector is configured The position of the angle from 1 to 89 degrees.

根據本發明的又一個適當的實施方式,對各所述分割區域基於在不同的兩個點測量的高度決定分割區域的基準面的高度差。 According to still another suitable embodiment of the present invention, the height difference of the reference planes of the divided regions is determined for each of the divided regions based on the heights measured at the two different points.

根據本發明的又一個適當的實施方式,還包括:在對所述分割區域的檢測過程中,藉由探測檢測對象來決定開始點(CP)的步驟,當所決定的開始點相對於預先設定的值出現誤差並被校正時,對之後的所有的分割區域應用校正值。 According to still another suitable embodiment of the present invention, the method further includes: determining a start point (CP) by detecting the detected object during the detecting of the divided area, when the determined starting point is relative to a preset When the value of the error occurs and is corrected, the correction value is applied to all subsequent divided regions.

根據本發明的另一個適當的實施方式,所述檢測對象為倒裝晶片的焊接凸塊、高密度積體電路的凸塊或記憶體凸塊。 According to another suitable embodiment of the present invention, the detection object is a solder bump of a flip chip, a bump of a high density integrated circuit, or a memory bump.

本發明的檢測方法具有如下優點,即,能夠進行無法採用成像檢測或其它檢測方法的倒裝晶片的檢測,與此同時能夠進行高密度積體電路(LSI)的檢測。此外,本發明的檢測方法藉由多個旋轉圖像來獲得整體影像,從而具有防止檢測錯誤的優點。進而,本發明的檢測方法具有如下優點,即,可藉由調節解析度來應用於任意密集結構的檢測。 The detection method of the present invention has an advantage that it is possible to perform detection of a flip chip which cannot be subjected to imaging detection or other detection methods, and at the same time, it is possible to perform detection of a high-density integrated circuit (LSI). Further, the detecting method of the present invention has an advantage of preventing detection errors by obtaining an entire image by a plurality of rotated images. Furthermore, the detection method of the present invention has the advantage that it can be applied to the detection of an arbitrary dense structure by adjusting the resolution.

10‧‧‧X射線檢測裝置 10‧‧‧X-ray detector

11‧‧‧X射線管 11‧‧‧X-ray tube

12‧‧‧探測器 12‧‧‧ detector

13‧‧‧檢測托盤 13‧‧‧Test tray

15‧‧‧定位軌道 15‧‧‧ Positioning track

30‧‧‧基板 30‧‧‧Substrate

31‧‧‧晶片 31‧‧‧ wafer

311~3MN‧‧‧晶片 311~3MN‧‧‧ wafer

321~32n‧‧‧檢測對象 321~32n‧‧‧Test objects

B1‧‧‧檢測對象 B1‧‧‧Test object

B2‧‧‧凸塊 B2‧‧‧Bumps

BI1‧‧‧正常圖像 BI1‧‧‧ normal image

BI2‧‧‧不良圖像 BI2‧‧‧ bad image

B21‧‧‧正常凸塊 B21‧‧‧Normal bumps

B22‧‧‧不良凸塊 B22‧‧‧bad bumps

B91‧‧‧可疑對象圖像 B91‧‧‧ Suspicious object image

B92‧‧‧合成圖像 B92‧‧‧Composite image

BL‧‧‧底線 BL‧‧‧ bottom line

BP1‧‧‧正常凸塊 BP1‧‧‧ normal bumps

BP2‧‧‧不良凸塊 BP2‧‧‧bad bumps

CP‧‧‧開始點 CP‧‧‧ starting point

CX‧‧‧X軸方向的校正值 Correction value for CX‧‧‧X-axis direction

CY‧‧‧Y軸方向的校正值 Correction value in the CY‧‧‧Y axis direction

DP‧‧‧探測點 DP‧‧‧ probe points

F11~F(M+1)(N+1)‧‧‧基準標記 F11~F(M+1)(N+1)‧‧‧ benchmark mark

ML‧‧‧中間線 ML‧‧‧ middle line

RI1、RI2、RI3‧‧‧截面圖像 RI1, RI2, RI3‧‧‧ cross-sectional image

S‧‧‧基板 S‧‧‧Substrate

SC1‧‧‧正常凸塊的接觸面 SC1‧‧‧ contact surface of normal bumps

SC2‧‧‧不良凸塊的接觸面 SC2‧‧‧ contact surface of bad bumps

TL‧‧‧頂線 TL‧‧‧ top line

X1、X2‧‧‧X射線 X1, X2‧‧‧X-ray

第1圖是示出本發明的X射線檢測裝置的實施例的圖。 Fig. 1 is a view showing an embodiment of an X-ray detecting apparatus of the present invention.

第2圖是示出本發明的X射線檢測方法的實施例的圖。 Fig. 2 is a view showing an embodiment of the X-ray detecting method of the present invention.

第3圖是示出在本發明的方法中應用的對相當於校正因數的、分割區域的基準面的高度差進行校正的實施例的圖。 Fig. 3 is a view showing an embodiment in which the height difference of the reference plane of the divided region corresponding to the correction factor applied in the method of the present invention is applied.

第4圖是示出在本發明的方法中應用的對相當於校正因數的、基準檢測部位的位置進行校正的實施例的圖。 Fig. 4 is a view showing an embodiment of correcting the position of the reference detection portion corresponding to the correction factor applied in the method of the present invention.

第5圖是示出藉由本發明的檢測裝置獲得的凸塊圖像的實施例的圖。 Fig. 5 is a view showing an embodiment of a bump image obtained by the detecting device of the present invention.

第6圖是示出在本發明的檢測方法中獲得旋轉截面圖像的過程的實施例的圖。 Fig. 6 is a view showing an embodiment of a process of obtaining a rotating cross-sectional image in the detecting method of the present invention.

第7圖是示出應用本發明的檢測方法的電路板的實施例的圖。 Fig. 7 is a view showing an embodiment of a circuit board to which the detecting method of the present invention is applied.

第8圖至第9圖是示出藉由本發明的檢測方法獲得的檢測圖像的實施例的圖。 8 to 9 are views showing an embodiment of a detected image obtained by the detecting method of the present invention.

下面,參照圖式所圖示的實施例對本發明進行詳細說明,但是,實施例是為了清楚地理解本發明,本發明並不限定於此。在下面的說明中,在不同的圖式中具有相同的元件符號的元件具有相似的功能,因此如果不是理解發明所需的,就不作重複的說明,對於習知的元件,將進行簡單的說明或省略說明,但不能理解為從本發明的實施例中排除。 The present invention is described in detail below with reference to the embodiments illustrated in the drawings, but the present invention is not limited thereto. In the following description, elements having the same component symbols in different drawings have similar functions, and therefore, if not required for understanding the invention, repeated description will not be given, and for the conventional components, a brief description will be given. Or the description is omitted, but it is not to be construed as being excluded from the embodiment of the present invention.

第1圖是示出本發明的X射線檢測裝置的實施例的圖。 Fig. 1 is a view showing an embodiment of an X-ray detecting apparatus of the present invention.

參照第1圖,X射線檢測裝置10包括:X射線管11,向檢測對象B1照射X射線;探測器12,藉由探測透射了檢測對象B1的X射線來形成圖像;檢測托盤13,能夠在將檢測對象B1移動到檢測位置的同時進行旋轉;以及定位軌道15,對檢測對象B1在探測器12與X射線管11之間進行定位,且呈圓形延伸,所述探測器12配置為能夠沿著定位軌 道15移動,或者,在定位軌道15的不同位置配置有至少兩個。 Referring to Fig. 1, an X-ray detecting apparatus 10 includes an X-ray tube 11 that emits X-rays to a detection target B1, and a detector 12 that detects an X-ray transmitted through the detection target B1 to form an image; Rotating while moving the detection object B1 to the detection position; and positioning the track 15, positioning the detection object B1 between the detector 12 and the X-ray tube 11, and extending in a circle, the detector 12 being configured as Able to follow the positioning rail The track 15 moves, or at least two are disposed at different positions of the positioning track 15.

本發明的檢測裝置10可用於檢測電子基板的記憶體晶片、倒裝晶片或高密度積體電路(LSI)的黏合,但並不限定於此,可用於檢測任意電子基板的黏合。本發明的檢測裝置10可應用於在半導體製程中應用的多種焊接的黏合檢測。可從X射線管11向檢測對象B1照射X射線X1、X2,透射了檢測對象B1的X射線X1、X2可被探測器12探測到。檢測對象B1可位於X射線管11的焦點,檢測對象B1可配置於檢測托盤13。檢測托盤13可製作成能夠在向水準方向移動的同時進行旋轉的結構。旋轉是指,檢測托盤13旋轉或者檢測對象B1旋轉。 The detecting device 10 of the present invention can be used for detecting the bonding of a memory wafer, a flip chip or a high-density integrated circuit (LSI) of an electronic substrate. However, the present invention is not limited thereto and can be used for detecting adhesion of an arbitrary electronic substrate. The detection device 10 of the present invention is applicable to adhesion detection of a variety of welds used in semiconductor processes. The X-rays X1 and X2 can be irradiated from the X-ray tube 11 to the detection target B1, and the X-rays X1 and X2 transmitted through the detection target B1 can be detected by the detector 12. The detection object B1 can be located at the focus of the X-ray tube 11, and the detection object B1 can be disposed on the detection tray 13. The detection tray 13 can be constructed to be rotatable while moving in the horizontal direction. Rotation means that the detection tray 13 is rotated or the object B1 is detected to rotate.

定位軌道15可以以X射線管11為中心配置為圓形,探測器12可沿著定位軌道15移動。或者,可在定位軌道15配置有至少兩個探測器12。定位軌道15具有對檢測對象B1決定X射線管11與探測器12之間的角度的功能。如第1圖所示,X射線管11可固定在規定的位置,檢測托盤13可配置成以水準方向或者X射線管11的照射方向為軸進行旋轉。並且,探測器12可配置成可相對於定位軌道15移動,或者,在定位軌道15的不同位置配置有至少兩個探測器12。具體地,探測器12可位於X射線照射方向上,或者,可以以相對於X射線照射方向成20度至50度的方式位於定位軌道15。像這樣相對於照射方向成規定的角度的探測器的位置為傾斜位置。探測器12可位於傾斜位置,以便獲得將在下面說明的旋轉截面圖像。與此相比,探測器12位於X射線照射方向上為垂直位置。探測器12可位於垂直位置,以便獲得檢測對象B1的平面圖像。 The positioning track 15 may be arranged in a circular shape centering on the X-ray tube 11, and the detector 12 may be moved along the positioning rail 15. Alternatively, at least two detectors 12 can be arranged on the positioning track 15. The positioning rail 15 has a function of determining the angle between the X-ray tube 11 and the probe 12 for the detection object B1. As shown in Fig. 1, the X-ray tube 11 can be fixed at a predetermined position, and the detection tray 13 can be arranged to rotate in the horizontal direction or the irradiation direction of the X-ray tube 11. Also, the detector 12 can be configured to be movable relative to the positioning track 15, or at least two detectors 12 can be disposed at different locations of the positioning track 15. Specifically, the detector 12 may be located in the X-ray irradiation direction, or may be located at the positioning rail 15 in a manner of 20 to 50 degrees with respect to the X-ray irradiation direction. The position of the probe at a predetermined angle with respect to the irradiation direction is an inclined position. The detector 12 can be located at an inclined position to obtain a rotational section image to be described below. In contrast to this, the detector 12 is in a vertical position in the X-ray irradiation direction. The detector 12 can be located in a vertical position in order to obtain a planar image of the detection object B1.

如上所述,藉由探測器12相對於X射線管11的固定的位置進行旋轉,或者,藉由在不同位置配置有至少兩個探測器12,從而獲得檢測對象B1的多種圖像。為檢測形成在高密度積體電路的焊接凸塊或者 黏合,X射線管11對檢測對象B1的空間解析度為0.01μm~30μm,在X射線管11旋轉的情況下,難以對焦,並且由於電子基板的干擾,X射線管11難以進行旋轉。因此,固定X射線管11而使探測器12移動的方式比較有利。而且,藉由使檢測對象B1旋轉,可獲得多個方向的截面圖像。 As described above, the plurality of images of the detection object B1 are obtained by rotating the fixed position of the probe 12 with respect to the X-ray tube 11, or by arranging at least two detectors 12 at different positions. To detect solder bumps formed in high-density integrated circuits or The spatial resolution of the X-ray tube 11 to the detection target B1 is 0.01 μm to 30 μm. When the X-ray tube 11 rotates, it is difficult to focus, and the X-ray tube 11 is difficult to rotate due to interference of the electronic substrate. Therefore, it is advantageous to fix the X-ray tube 11 to move the detector 12. Further, by rotating the detection target B1, a cross-sectional image in a plurality of directions can be obtained.

本發明的檢測裝置10可製作成多種結構,並不限定於所提供的實施例。 The detecting device 10 of the present invention can be fabricated in a variety of configurations and is not limited to the embodiments provided.

第2圖是示出本發明的X射線檢測方法的實施例的圖。 Fig. 2 is a view showing an embodiment of the X-ray detecting method of the present invention.

參照第2圖,利用X射線的高密度積體電路板的檢測方法包括:藉由將所述電路板分割成多個區域來形成分割區域的步驟S21;向分別位於所述分割區域的檢測對象以垂直方向照射X射線的步驟S22;從垂直方向的所述X射線獲得一次平面圖像的步驟S23;根據所述一次平面圖像將檢測對象分類為正常、不良或可疑對象的步驟S241、S242;針對被分類為可疑對象的檢測對象獲得多個旋轉截面圖像的步驟S25;根據所述多個旋轉截面圖像生成合成圖像的步驟S26;以及根據所述合成圖像進行二次圖像檢測的步驟S27。 Referring to Fig. 2, a method of detecting a high-density integrated circuit board using X-rays includes a step S21 of forming a divided region by dividing the circuit board into a plurality of regions, and detecting objects respectively located in the divided regions. a step S22 of illuminating the X-rays in the vertical direction; a step S23 of obtaining the planar image from the X-rays in the vertical direction; and steps S241 and S242 of classifying the detected objects into normal, defective or suspicious objects according to the primary planar image. a step S25 of obtaining a plurality of rotated section images for the detection object classified as the suspicious object; a step S26 of generating a composite image from the plurality of rotation section images; and performing a secondary image based on the composite image Step S27 of the detection.

分割區域的數量可根據作為檢測對象的電路板、晶片或晶圓的大小來決定,分割區域的大小可根據X射線管的性能或視場(field of view,FOV)來決定。此外,分割區域可根據X射線管、探測器的移動結構或檢測托盤的移動結構來設定。此外,分割區域可藉由樣品提取方式來決定。例如,在難以對檢測對象進行整體檢測的情況下,照射區域可被一次分割,並對分割後的各區域設定樣品區域。而且,可以以提取樣品的區域為基準來決定分割區域。各分割區域所包括的凸塊或黏合數量可相同或不同,各分割區域的幾何形狀或大小可相同或不同。如上所述,本發明不被分割區域的幾何結構所限定。 The number of divided regions can be determined according to the size of the board, wafer or wafer to be detected, and the size of the divided regions can be determined according to the performance of the X-ray tube or the field of view (FOV). Further, the divided area may be set according to an X-ray tube, a moving structure of the probe, or a moving structure of the detecting tray. In addition, the segmentation area can be determined by sample extraction. For example, when it is difficult to perform overall detection on the detection target, the irradiation area can be divided once, and the sample area is set for each of the divided areas. Moreover, the divided region can be determined based on the region from which the sample is extracted. The number of bumps or bonds included in each divided region may be the same or different, and the geometric shapes or sizes of the divided regions may be the same or different. As noted above, the present invention is not limited by the geometry of the segmented regions.

當決定了分割區域(S21)時,X射線管、探測器或檢測托盤的移動方法也就被決定。而且,可在各分割區域設定檢測開始區域。檢測開始區域可根據在分割區域中的檢測開始的位置探測到的凸塊或黏合的位置來決定。對分割區域的X射線檢測可對所有凸塊進行或者藉由設定樣品區域來進行。當決定了分割區域(S21)時,可以以此為基準進行區域檢測(S22)。 When the divided area (S21) is determined, the movement method of the X-ray tube, the detector or the detection tray is also determined. Moreover, the detection start area can be set in each divided area. The detection start area can be determined based on the position of the bump or the adhesion detected at the position where the detection in the divided area starts. X-ray detection of the segmented regions can be performed on all bumps or by setting a sample region. When the divided area (S21) is determined, the area detection can be performed based on this (S22).

在本說明書中區域檢測是指,在分割區域中以連續的順序對多個檢測對象整體進行檢測。為進行區域檢測,X射線管、探測器或檢測托盤可移動到預先設定的位置,並獲得各分割區域的一次平面圖像(S23)。為獲得一次平面圖像,X射線管相對於作為檢測對象的凸塊或黏合垂直地設置,以使X射線從檢測對象的上側頂部藉由底部的方式進行照射。在所述檢測方法中,藉由探測器獲得的圖像可以為從檢測對象的頂部觀察底面的平面圖像(top view)。 In the present specification, the area detection means that the entire plurality of detection objects are detected in a continuous order in the divided area. For area detection, the X-ray tube, the detector or the detection tray can be moved to a predetermined position, and a primary planar image of each divided area is obtained (S23). In order to obtain a planar image, the X-ray tube is vertically disposed with respect to the bump or the bonding object to be detected, so that the X-rays are irradiated from the upper side of the object to be detected by the bottom. In the detection method, the image obtained by the detector may be a top view of the bottom surface viewed from the top of the detection object.

根據一次平面圖像可獲得位於各分割區域的檢測對象的大小。並且,根據檢測對象的圖像大小,檢測對象可分類為正常、不良(S241)以及可疑對象(S242)。根據需要,為進行分類可準備基準圖像。 The size of the detection object located in each divided area can be obtained from the primary planar image. Further, depending on the image size of the detection target, the detection target can be classified into normal, defective (S241), and suspicious (S242). A reference image can be prepared for classification as needed.

不良是指,檢測對象的圖像遠比基準圖像足夠小的檢測對象,可疑對象是指,具有出現不良的概率的檢測對象。可疑對象的檢測對位於分割區域的各檢測對象決定,對可疑對象的唯一識別號可存儲到例如與控制單元連接的存儲介質中。可疑對象可按概率來決定,也可按照預先設定的基準來決定。例如,可以準備基準圖像並比較基準圖像與檢測對象圖像的大小。而且,當圖像的大小之差為5%或15%以上時,可分類為可疑檢測對象。此外,當圖像的大小之差為其以上時,可分類為不良。作為備選方案,可根據特定區域的亮度來決定可疑對象。例如,當探測到的圖像為 圓形時,可藉由比較週邊部分的陰影和基準圖像來檢測可疑對象。作為另一個備選方案,可根據檢測到的圖像的幾何形狀來檢測可疑對象。可藉由多種方法檢測可疑檢測對象,並不限定於本發明所提供的實施例。 The defect refers to a detection target in which the image of the detection target is sufficiently smaller than the reference image, and the suspicious object is a detection target having a probability of occurrence of a defect. The detection of the suspicious object is determined for each detected object located in the divided area, and the unique identification number of the suspicious object can be stored, for example, in a storage medium connected to the control unit. Suspicious objects can be determined by probability or by pre-set benchmarks. For example, a reference image can be prepared and the size of the reference image and the detection target image can be compared. Moreover, when the difference in size of the images is 5% or more, it can be classified as a suspicious detection object. Further, when the difference in size of the image is equal to or higher, it can be classified as defective. As an alternative, suspicious objects can be determined based on the brightness of a particular area. For example, when the detected image is In the case of a circle, the suspicious object can be detected by comparing the shadow of the peripheral portion with the reference image. As another alternative, the suspicious object can be detected based on the geometry of the detected image. The suspicious detection object can be detected by various methods, and is not limited to the embodiment provided by the present invention.

當決定了不良和可疑對象時(S241、S242),可對可疑對象進行二次圖像檢測。 When a bad or suspicious object is determined (S241, S242), a secondary image detection can be performed on the suspicious object.

二次圖像檢測是指,根據檢測對象的三維圖像對作為可疑對象的檢測對象準確地判斷其是否為不良的過程。如第1圖所示,為了進行二次檢測,檢測托盤可向水準方向移動,探測器可沿著定位軌道移動。此外,可在傾斜位置預先配置有探測器。在這樣的位置,檢測對象和探測器將位於相對於X射線管的照射方向或獲得一次平面圖像的方向旋轉了1至89度的傾斜位置。當檢測對象在所述傾斜位置旋轉時,可獲得檢測對象的相互不同方向上的多個旋轉方向截面圖像(S25)。關於旋轉方向截面圖像,例如可以使檢測對象旋轉0至360度而獲得所有方向上的旋轉方向截面圖像。而且,可根據這樣獲得的多個旋轉截面圖像生成合成圖像S26。 The secondary image detection is a process of accurately determining whether or not the detection target is a defective object based on the three-dimensional image of the detection target. As shown in Fig. 1, in order to perform the secondary detection, the detection tray can be moved in the horizontal direction, and the detector can be moved along the positioning track. In addition, a detector can be pre-configured at an inclined position. In such a position, the detection object and the detector will be rotated at an inclined position of 1 to 89 degrees with respect to the irradiation direction of the X-ray tube or the direction in which the planar image is obtained. When the detection object is rotated at the tilt position, a plurality of rotation direction cross-sectional images of the detection objects in mutually different directions are obtained (S25). Regarding the rotation direction cross-sectional image, for example, the detection object can be rotated by 0 to 360 degrees to obtain a rotation direction cross-sectional image in all directions. Moreover, the composite image S26 can be generated from the plurality of rotated cross-sectional images thus obtained.

可對各分割區域的各凸塊賦予唯一識別號,並提取可疑對象的唯一識別號。可決定存在可疑對象的分割區域或可疑對象在分割區域內的位置。當可疑對象的位置被決定時,即可由此決定旋轉托盤的移動距離或旋轉角度。而且,可決定探測器的位置。之後,隨著檢測對象的旋轉,可獲得多個旋轉方向截面圖像(S25),並且可藉由例如反投影(back projection)的方式生成合成圖像(S26)。而且,藉由對合成圖像的二次圖像檢測,可最終判斷可疑對象是否為不良。 A unique identification number can be assigned to each bump of each divided area, and a unique identification number of the suspicious object can be extracted. You can determine the location of a segmented area of a suspicious object or a suspicious object within a split area. When the position of the suspicious object is determined, the moving distance or the rotation angle of the rotating tray can be determined thereby. Moreover, the position of the detector can be determined. Thereafter, as the detection object is rotated, a plurality of rotation direction cross-sectional images are obtained (S25), and a composite image can be generated by, for example, back projection (S26). Moreover, by detecting the secondary image of the composite image, it is possible to finally determine whether the suspicious object is defective.

在對各分割區域的檢測過程中,需要調整X射線管對檢測對象的空間解析度。在高密度積體電路板的檢測過程中,空間解析度的單 位為μm,有可能會出現由電路板的狀態預先決定的空間解析度的誤差,因此,應在對各分割區域進行檢測之前確認。 In the process of detecting each divided region, it is necessary to adjust the spatial resolution of the X-ray tube to the detected object. In the process of detecting high-density integrated circuit boards, the spatial resolution of the single The bit is μm, and there is a possibility that the error of the spatial resolution determined in advance by the state of the board is confirmed. Therefore, it is confirmed before the detection of each divided area.

第3圖是示出在本發明的方法中應用的對相當於校正因數的分割區域的基準面的高度差進行校正的實施例的圖。 Fig. 3 is a view showing an embodiment in which the height difference of the reference plane of the divided region corresponding to the correction factor is corrected applied in the method of the present invention.

在檢測過程中應設定檢測條件,檢測條件可包括多個參數。在檢測過程中,將與檢測條件相關的參數中的、對檢測結果產生影響並且在檢測過程中需根據需要進行校正的參數叫作校正因數(corrected factor)。 The detection conditions should be set during the detection process, and the detection conditions may include a plurality of parameters. Among the parameters related to the detection conditions, a parameter that affects the detection result and needs to be corrected as needed during the detection process is called a corrected factor.

參照第3圖,配置在基板30的各晶片311~3MN可設定為一個分割區域,在各晶片311~3MN的周圍可設定四個基準標記(Fiducial Mark)F11~F(M+1)(N+1)。而且,可以以各基準標記F11~F(M+1)(N+1)為基準對高度差進行校正。 Referring to Fig. 3, each of the wafers 311 to 3MN disposed on the substrate 30 can be set as one divided region, and four fiducial marks F11 to F(M+1) can be set around the respective wafers 311 to 3MN (N). +1). Further, the height difference can be corrected based on the reference marks F11 to F(M+1)(N+1).

之所以對高度差進行校正,是因為相對於用於獲得基板30的X射線圖像的基準面,在不同的位置其高度可能不同。例如,為固定基板30可在基板的下側設置空氣吸入裝置。此外,基板30本身也有可能在製程過程中彎曲或熱變形。因此,從X射線管到分割區域的距離對於不同的晶片311~3MN來說有可能不同。而且,有可能得不到相同倍率的圖像或者預計的圖像。因此,需要事先在不同的分割區域中測量從基準位置到基板30的距離,並且根據需要進行校正。 The reason why the height difference is corrected is because the height may be different at different positions with respect to the reference plane for obtaining the X-ray image of the substrate 30. For example, an air intake device may be provided on the lower side of the substrate for the fixed substrate 30. In addition, the substrate 30 itself may also be bent or thermally deformed during the manufacturing process. Therefore, the distance from the X-ray tube to the divided area may be different for different wafers 311~3MN. Moreover, it is possible to obtain an image of the same magnification or an expected image. Therefore, it is necessary to measure the distance from the reference position to the substrate 30 in different divided regions in advance, and perform correction as needed.

為進行校正,可藉由例如超聲波距離感測器、鐳射距離感測器或光感測器那樣的近距離測量感測器來測量各晶片311~3MN周圍的四個基準標記F11~F(M+1)(N+1)的位置。而且,可藉由內插法(interpolation)等方法來決定相對於中間部位的高度。藉由這樣的方法來決定各晶片311~3MN的高度,例如,可藉由內插法來決定對配置在不 同位置的晶片311~3MN的校正值。而且,可基於所述校正值在對各分割區域的檢測過程中校正對X射線管對檢測區域的空間解析度。 For correction, four reference marks F11~F (M11) around each of the wafers 311~3MN can be measured by a proximity measuring sensor such as an ultrasonic distance sensor, a laser distance sensor, or a light sensor. +1) (N+1) position. Moreover, the height with respect to the intermediate portion can be determined by a method such as interpolation. The height of each of the wafers 311 to 3MN is determined by such a method. For example, the interpolation can be determined by interpolation. Correction value of the wafer 311~3MN in the same position. Moreover, the spatial resolution of the X-ray tube pair detection area can be corrected during the detection of each of the divided areas based on the correction value.

對分割區域的高度差的校正可藉由多種方式來進行,本發明並不限定於所提供的實施例。 The correction of the height difference of the divided regions can be performed in various ways, and the present invention is not limited to the embodiments provided.

第4圖是示出在本發明的方法中應用的對相當於校正因數的基準檢測部位的位置進行校正的實施例的圖。 Fig. 4 is a view showing an embodiment of correcting the position of the reference detection portion corresponding to the correction factor applied in the method of the present invention.

參照第4圖(a),為進行分割區域的檢測,要在分割區域決定用於開始檢測的檢測對象。具體地,要探測作為檢測的基準的初始檢測對象321。如果初始檢測對象321的檢測位置出現誤差,則在對分割區域的連續的檢測過程中誤差會按其原樣保持下去。 Referring to Fig. 4(a), in order to detect the divided region, the detection target for starting the detection is determined in the divided region. Specifically, an initial detection object 321 as a reference for detection is to be detected. If an error occurs in the detection position of the initial detection object 321, the error is maintained as it is during the continuous detection of the divided area.

在晶片31中可預先決定作為檢測對象321的凸塊或黏合的位置並製作成佈局圖,由此可使X射線管和探測器連續移動而對分割區域進行檢測。如果當前作為檢測開始對象的檢測對象321的位置被設定為開始點CP,但是實質上作為初始檢測對象的檢測對象321的位置位於偏移的探測點DP時,就需要對此進行校正。而且,這樣的校正值需應用於位於作為檢測對象的所有分割區域的檢測對象321~32n。 In the wafer 31, the position of the bump or the bonding target 321 can be determined in advance and created as a layout, whereby the X-ray tube and the detector can be continuously moved to detect the divided region. If the position of the detection target 321 which is currently the detection start target is set as the start point CP, but the position of the detection target 321 which is the initial detection target is located at the offset detection point DP, it is necessary to correct this. Moreover, such a correction value needs to be applied to the detection targets 321 to 32n located in all the divided regions to be detected.

參照第4圖(b),基板30可具有作為分割區域的多個晶片31,需要對各晶片31應用X軸方向的校正值CX和Y軸方向的校正值CY。如第4圖(c)所示,可決定對初始檢測對象321的X軸方向的校正值CX和Y軸方向的校正值CY,並且可決定至開始點CP和探測點DP的位移或向量。而且,利用在第一分割區域的探測過程中獲得的基於位移或向量進行校正的值對之後的分割區域進行探測過程。 Referring to Fig. 4(b), the substrate 30 may have a plurality of wafers 31 as divided regions, and it is necessary to apply a correction value CX in the X-axis direction and a correction value CY in the Y-axis direction to each wafer 31. As shown in FIG. 4(c), the correction value CX in the X-axis direction of the initial detection target 321 and the correction value CY in the Y-axis direction can be determined, and the displacement or vector to the start point CP and the detection point DP can be determined. Moreover, the detection process based on the displacement or vector corrected in the detection process of the first divided region is performed on the subsequent divided region.

可製作對各分割區域或分割區域內的凸塊的佈局圖,並且可基於佈局圖藉由控制單元或輸入指令來決定X射線管的移動位置。如果在 初始檢測過程中由於位置差異而進行了校正,則可對預先決定的所有移動位置進行與相同的位移或向量對應的校正。而且,可改善由初始檢測開始位置及其設定所需時間導致的效率低下。 A layout map for the bumps in each of the divided regions or the divided regions may be created, and the moving position of the X-ray tube may be determined by the control unit or an input command based on the layout map. If at Correction due to positional differences during initial detection allows corrections corresponding to the same displacement or vector for all predetermined moving positions. Moreover, the inefficiency caused by the initial detection start position and the time required for setting it can be improved.

在基板30可設置有多個檢測對象321~32n,由此可預先決定檢測對象的佈局圖。而且,基板30可以晶片為單位或藉由其它適當的方法來分割為分割區域,在各分割區域的檢測過程中,需要決定初始檢測開始位置。當在第一分割區域決定了需校正的X軸方向的校正值CX和Y軸方向的校正值CY時,可在之後的分割區域的檢測過程中基於所決定的校正值CX、CY來進行檢測。 A plurality of detection objects 321 to 32n can be provided on the substrate 30, whereby the layout of the detection target can be determined in advance. Further, the substrate 30 may be divided into divided regions in units of wafers or by other appropriate methods, and the initial detection start position needs to be determined during the detection of each divided region. When the correction value CX in the X-axis direction and the correction value CY in the Y-axis direction to be corrected are determined in the first divided region, the detection may be performed based on the determined correction values CX, CY in the detection process of the subsequent divided regions. .

第5圖是示出藉由本發明的檢測裝置獲得的凸塊圖像的實施例的圖。 Fig. 5 is a view showing an embodiment of a bump image obtained by the detecting device of the present invention.

第5圖(a)是示出記憶體晶片的凸塊的不良圖像的圖,第5圖的(b)是示出記憶體晶片的凸塊的正常圖像的圖。 Fig. 5(a) is a view showing a defective image of a bump of a memory chip, and Fig. 5(b) is a view showing a normal image of a bump of a memory chip.

參照第5圖,由於不良凸塊BP2的基板S的接觸面積SC2的面積小,所以X射線垂直照射而探測到的不良圖像BI2的大小會變小。相比之下,由於正常凸塊BP1的基板S的接觸面積SC1的面積大,所以正常圖像BI1的面積具有與正常凸塊BP1的截面面積對應的大小。如上所述,當記憶體晶片為凸塊時,可藉由一次圖像檢測判斷凸塊是否為不良。但是,在例如為高密度積體電路的情況下,則由於凸塊的形狀,會出現藉由X射線對基板S垂直地照射的一次圖像檢測難以判斷其是否為不良的可疑對象凸塊。 Referring to Fig. 5, since the area of the contact area SC2 of the substrate S of the defective bump BP2 is small, the size of the defective image BI2 detected by the X-ray vertical irradiation is small. In contrast, since the area of the contact area SC1 of the substrate S of the normal bump BP1 is large, the area of the normal image BI1 has a size corresponding to the cross-sectional area of the normal bump BP1. As described above, when the memory chip is a bump, it is possible to judge whether the bump is defective by one image detection. However, in the case of, for example, a high-density integrated circuit, due to the shape of the bump, it is difficult to determine whether or not it is a defective suspicious object bump by detecting one image vertically by the X-ray on the substrate S.

第6圖是示出在本發明的檢測方法中獲得旋轉截面圖像的過程的實施例的圖。 Fig. 6 is a view showing an embodiment of a process of obtaining a rotating cross-sectional image in the detecting method of the present invention.

參照第6圖,在是LSI晶片的凸塊的情況下,難以藉由一次 檢測圖像來區分正常凸塊B21和不良凸塊B22。正常凸塊B21和不良凸塊B22難以藉由沿頂線TL和底線BL的截面來區分,可藉由沿中間線ML的截面來區分。 Referring to Fig. 6, in the case of a bump of an LSI wafer, it is difficult to use once The image is detected to distinguish between the normal bump B21 and the bad bump B22. The normal bump B21 and the bad bump B22 are difficult to distinguish by the section along the top line TL and the bottom line BL, and can be distinguished by the section along the intermediate line ML.

如第6圖(b)所示,為獲得沿中間線ML的截面,作為檢測對象的凸塊B2可向箭頭方向旋轉,可在規定的旋轉角獲得旋轉圖像或截面圖像RI1、RI2、RI3。而且,可根據旋轉圖像獲得整個圖像,並由此獲得沿中間線ML的截面。 As shown in FIG. 6(b), in order to obtain a cross section along the intermediate line ML, the bump B2 as a detection target can be rotated in the direction of the arrow, and a rotated image or a sectional image RI1, RI2 can be obtained at a predetermined rotation angle. RI3. Moreover, the entire image can be obtained from the rotated image, and thereby the cross section along the intermediate line ML is obtained.

根據凸塊的配置位置或形狀會發生多種形態的不良,可基於此選擇適當的檢測方法。或者,也可根據電路板的形狀選擇適當的檢測方法。 Various types of defects may occur depending on the arrangement position or shape of the bumps, and an appropriate detection method can be selected based on this. Alternatively, an appropriate detection method can be selected according to the shape of the board.

第7圖是示出應用本發明的檢測方法的電路板30的實施例的圖. Figure 7 is a diagram showing an embodiment of a circuit board 30 to which the detection method of the present invention is applied.

參照第7圖,沿著電路板70的行和列可分別配置有74個和47個的晶片,例如,對1μm至5μm的空間解析度,可沿著行和列分別決定37個和47個視場(field of view,FOV)。能夠以FOV為基準設定分割區域,例如,可設定四個分割區域。一個FOV需要約一秒種的檢測時間,一個分割區域需要約15分鐘的檢測時間。而且,為檢測整個基板,需要約60分鐘的時間。 Referring to FIG. 7, 74 and 47 wafers can be respectively arranged along the rows and columns of the circuit board 70. For example, for spatial resolution of 1 μm to 5 μm, 37 and 47 can be determined along the row and the column, respectively. Field of view (FOV). The divided area can be set based on the FOV. For example, four divided areas can be set. A FOV requires about one second of detection time, and a split area requires about 15 minutes of detection time. Moreover, it takes about 60 minutes to detect the entire substrate.

第8圖至第9圖是示出藉由本發明的檢測方法獲得的檢測圖像的實施例的圖。 8 to 9 are views showing an embodiment of a detected image obtained by the detecting method of the present invention.

第8圖是示出一次平面圖像檢測的結果的圖,作為檢測圖像CPI而被獲屬於各FOV的各晶片的圖像,還可獲得各晶片的焊接凸塊SB的凸塊圖像SBI。在一次平面圖像中不能明確判斷是否為不良的焊接凸塊SP可藉由合成圖像來明確地判斷。 Fig. 8 is a view showing the result of the primary plane image detection, and the image of each wafer belonging to each FOV as the detected image CPI, and the bump image SBI of the solder bump SB of each wafer can also be obtained. . It is not possible to clearly determine whether or not a defective solder bump SP in a planar image can be clearly judged by synthesizing an image.

第9圖(a)是示出對可疑對象的平面圖像和合成圖像的圖。 Fig. 9(a) is a view showing a planar image and a composite image of a suspicious object.

參照第9圖(a),可疑對象圖像B91難以判斷是否為不良,可藉由第9圖(b)的合成圖像B92來判斷是否為不良。可疑對象圖像B91可以是冷焊(cold joint)等,冷焊難以藉由一次平面圖像來明確地判斷出是否為不良。因此,需要藉由形成合成圖像來判斷是否為不良。 Referring to Fig. 9(a), it is difficult to determine whether or not the suspicious object image B91 is defective, and it is possible to judge whether or not it is defective by the composite image B92 of Fig. 9(b). The suspicious object image B91 may be a cold joint or the like, and it is difficult for the cold welding to clearly determine whether or not it is defective by the primary planar image. Therefore, it is necessary to determine whether or not it is defective by forming a composite image.

本發明的檢測方法具有以下優點。即,能夠對無法應用成像檢測方法或其它檢測方法的倒裝晶片進行檢測,並且能夠檢測高密度積體電路(LSI)。此外,本發明的檢測方法根據多個旋轉圖像來獲得整體影像,從而能夠防止檢測錯誤。進而,本發明的檢測方法可藉由解析度的調節而應用於任意密集結構的檢測。 The detection method of the present invention has the following advantages. That is, it is possible to detect a flip chip in which an imaging detecting method or another detecting method cannot be applied, and to detect a high-density integrated circuit (LSI). Further, the detecting method of the present invention obtains an overall image based on a plurality of rotated images, thereby preventing detection errors. Furthermore, the detection method of the present invention can be applied to the detection of an arbitrary dense structure by the adjustment of the resolution.

10‧‧‧X射線檢測裝置 10‧‧‧X-ray detector

11‧‧‧X射線管 11‧‧‧X-ray tube

12‧‧‧探測器 12‧‧‧ detector

13‧‧‧檢測托盤 13‧‧‧Test tray

15‧‧‧定位軌道 15‧‧‧ Positioning track

B1‧‧‧檢測對象 B1‧‧‧Test object

X1、X2‧‧‧X射線 X1, X2‧‧‧X-ray

Claims (5)

一種利用X射線的高密度積體電路的檢測方法,其包括:藉由將一電路板分割成多個區域來形成一分割區域的步驟;向分別位於該分割區域的一檢測對象以垂直方向照射X射線的步驟;藉由垂直方向的該X射線獲得一次平面圖像;根據該一次平面圖像將檢測對象分類為一正常、不良或可疑對象的步驟;針對被分類為該可疑對象的該檢測對象獲得複數個旋轉截面圖像的步驟;藉由該複數個旋轉截面圖像來生成一合成圖像的步驟;以及根據該合成圖像進行二次圖像檢測的步驟。 A method for detecting a high-density integrated circuit using X-rays, comprising: forming a divided region by dividing a circuit board into a plurality of regions; and illuminating in a vertical direction to a detection object respectively located in the divided region a step of X-ray; obtaining a planar image by the X-ray in a vertical direction; a step of classifying the detected object as a normal, bad or suspicious object according to the primary planar image; and detecting the detected object as the suspicious object a step of obtaining a plurality of rotated cross-sectional images by the object; a step of generating a composite image by the plurality of rotated cross-sectional images; and a step of performing secondary image detection based on the composite image. 如申請專利範圍第1項所述之利用X射線的高密度積體電路的檢測方法,其中,為獲得該複數個旋轉截面圖像,使探測器以相對於垂直方向成1至89度的角度的方式進行旋轉,或者,將探測器配置在成1至89度的角度的位置。 The method for detecting a high-density integrated circuit using X-rays as described in claim 1, wherein the detector is obtained at an angle of 1 to 89 degrees with respect to a vertical direction in order to obtain the plurality of rotated cross-sectional images. The way to rotate, or to configure the detector at an angle of 1 to 89 degrees. 如申請專利範圍第1項所述之利用X射線的高密度積體電路的檢測方法,其中包括對各該分割區域基於在不同的兩個點測量的高度來決定該分割區域的基準面的高度差的步驟。 The method for detecting a high-density integrated circuit using X-rays according to claim 1, wherein the height of the reference plane of the divided region is determined based on the heights measured at the two different points for each of the divided regions. Poor steps. 如申請專利範圍第1項所述之利用X射線的高密度積體電路的檢測方法,其進一步包括:在對該分割區域的檢測過程中,藉由探測該檢測對象來決定一 開始點(CP),當所決定的該開始點相對於預先設定的值出現誤差並被校正時,對之後的所有的該分割區域應用校正值。 The method for detecting a high-density integrated circuit using X-rays according to claim 1, further comprising: determining a detection target by detecting the detection target during the detecting of the divided region The start point (CP), when the determined start point has an error with respect to a preset value and is corrected, applies a correction value to all of the subsequent divided areas. 如申請專利範圍第1項所述之利用X射線的高密度積體電路的檢測方法,其中,該檢測對象為倒裝晶片的焊接凸塊、高密度積體電路的凸塊或記憶體凸塊。 The method for detecting a high-density integrated circuit using X-rays according to the first aspect of the invention, wherein the object to be detected is a solder bump of a flip chip, a bump of a high-density integrated circuit, or a memory bump. .
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CN111157550A (en) * 2018-11-07 2020-05-15 嘉必思股份有限公司 Method for selecting detection area of high-density detection object and X-ray tube device thereof

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TW201543027A (en) * 2014-04-04 2015-11-16 Nordson Corp X-ray inspection apparatus for inspecting semiconductor wafers

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201543027A (en) * 2014-04-04 2015-11-16 Nordson Corp X-ray inspection apparatus for inspecting semiconductor wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111157550A (en) * 2018-11-07 2020-05-15 嘉必思股份有限公司 Method for selecting detection area of high-density detection object and X-ray tube device thereof

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