TWI589010B - 反應性熱處理設備 - Google Patents

反應性熱處理設備 Download PDF

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TWI589010B
TWI589010B TW105119630A TW105119630A TWI589010B TW I589010 B TWI589010 B TW I589010B TW 105119630 A TW105119630 A TW 105119630A TW 105119630 A TW105119630 A TW 105119630A TW I589010 B TWI589010 B TW I589010B
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temperature portion
furnace tube
heat treatment
treatment apparatus
low temperature
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TW105119630A
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TW201801336A (zh
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黃庭輝
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上銀光電股份有限公司
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Priority to TW105119630A priority Critical patent/TWI589010B/zh
Priority to EP16185249.6A priority patent/EP3261135A1/en
Priority to US15/245,206 priority patent/US20170369990A1/en
Priority to CN201610823220.3A priority patent/CN107527970A/zh
Priority to CN201621055244.0U priority patent/CN206271726U/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5866—Treatment with sulfur, selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/04—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity adapted for treating the charge in vacuum or special atmosphere
    • F27B9/045—Furnaces with controlled atmosphere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Description

反應性熱處理設備
一種反應性熱處理設備，特別是一種用於處理薄膜裝置，並且具有一凹陷部可防止含硒氣體冷凝之液態硒回流的反應性熱處理設備。
太陽能發電是一種可再生且環保的發電方式，在太陽能發電的過程中不會產生二氧化碳或其他溫室氣體。也因此，太陽能發電在逐漸重視環保的現代，開始被廣泛使用，現在於住宅建築、公共設施、裝置藝術或交通工具上，都能夠看到太陽能發電裝置。 要將陽光轉換為電力，則需要太陽能電池，以儲存太陽能轉換的電力。太陽能電池的種類較多，其中CIGS（銅銦鎵硒）太陽能電池擁有較佳的轉換效率、穩定性佳、弱光特性良好的優點，因此CIGS太陽能電池是目前市場主流的太陽能電池之一。 傳統的CIGS太陽能電池，其常用的製造方法是濺鍍法，將Ga/Cu/In等元素濺鍍在Mo金屬基板後，再使用硒化爐在以高溫450~550℃進行硒化反應。然而，請參閱圖1，圖1所繪示為習知硒化過程之示意圖。在硒化爐10中，靠近爐口的低溫部12溫度須維持在250℃以下，避免O形環劣化導致漏氣。然而，當爐中的硒氣體14靠近低溫部12時，硒氣體14會冷凝成液態硒且順著低溫部之爐壁向下流，並順著爐壁下方回流到高溫部11中。回到高溫部11的冷凝液態硒又會產生氣化作用，並與原本在高溫區的氣體混合，導致硒氣體14濃度變化，進而影響製造過程的穩定性。 因此，如何使CIGS太陽能電池的製作過程能夠更穩定，便是本領域具通常知識者值得去思量地。
基於上述之原因，本發明提供一種反應性熱處理設備，可避免冷凝之液態硒回流高溫區，維持硒反應的穩定性，提高薄膜裝置加工的良率。 本發明提供一種反應性熱處理設備，適於處理一薄膜裝置，該反應性熱處理設備包括一爐管。爐管沿著一方向延伸，具有一第一端與一第二端，該爐管還包括一高溫部、一低溫部及一閥門。高溫部靠近該第二端，用以擺放薄膜裝置。低溫部靠近該第一端，具有一氣密結構。閥門設置於該第一端。其中，該低溫部之一內側壁具有一凹陷部，此凹陷部與該高溫部的一內側壁形成一段差。 上述之反應性熱處理設備，其中，低溫部之凹陷部以外之內側壁，是與高溫部之內側壁切齊。 上述之反應性熱處理設備，其中，凹陷部是延伸通過整個低溫部。 上述之反應性熱處理設備，其中，高溫部與低溫部是以相同材料製成。 上述之反應性熱處理設備，其中，高溫部與該低溫部是以石英製成。 上述之反應性熱處理設備，其中，高溫部與該低溫部是一整體結構。 上述之反應性熱處理設備，其中，高溫部與該低溫部是以不同材料製成。 上述之反應性熱處理設備，其中，低溫部是以不鏽鋼製成。 上述之反應性熱處理設備，還包括一容器，該容器與該凹陷部嵌合。 上述之反應性熱處理設備，其中，高溫部之長度大於該低溫部之長度。 本發明還提供一種反應性熱處理設備的製造方法，包括： 提供一爐管，該爐管沿著一方向而設置，該爐管還包括一第一端與一第二端，該爐管包括一高溫部與一低溫部，該高溫部是靠近該第二端並用以放置一薄膜裝置，該低溫部靠近該第一端且還具有一氣密結構；及 在該低溫部之內側壁上形成一凹陷部，該凹陷部與該高溫部之內側壁形成一段差。 上述之反應性熱處理設備的製造方法，還包括：形成一容器與該凹陷部嵌合。 上述之反應性熱處理設備的製造方法，其中，該高溫部之長度大於該低溫部之長度。 上述之反應性熱處理設備的製造方法，其中，該高溫部與該低溫部是以相同材料形成。 上述之反應性熱處理設備的製造方法，其中，該高溫部與該低溫部是以不同材料製成。 上述之反應性熱處理設備的製造方法，其中，該低溫部是以不鏽鋼形成。 本發明還提供另一種反應性熱處理設備的製造方法，包括： 提供一第一爐管； 提供一第二爐管，該第二爐管具有一氣密結構，其中該第一爐管之長度大於該第二爐管之長度，該第二爐管之截面積大於該第一爐管之截面積； 接合該第一爐管與該第二爐管，使該第一爐管與該第二爐管之交界處形成一段差。 上述之反應性熱處理設備的製造方法，其中，該第一爐管與該第二爐管為不鏽鋼材質。 上述之反應性熱處理設備的製造方法，其中，該第一爐管與該第二爐管為石英材質。 上述之反應性熱處理設備的製造方法，其中，該第一爐管為石英，該第二爐管為不鏽鋼。
請參閱圖2A，圖2A所繪示為第一實施例之反應性熱處理設備200。本發明之反應性熱處理設備200適於處理一薄膜裝置211。薄膜裝置211在本實施例中為CIGS薄膜太陽能電池，且膜薄裝置211是放置在反應性熱處理設備200中以濺鍍法進行加工，在高溫中將硒沉積於薄膜裝置211之表面並進行硒反應。 反應性熱處理設備包括一爐管201，爐管201是沿著一方向延伸，且爐管201具有一第一端202與一第二端203。第二端203是相對於第一端202，且第二端203與第一端202分別是設置於爐管201的兩端。爐管201還包括一高溫部210與一低溫部220。在本實施例中，高溫部210的長度是大於低溫部220的長度。 高溫部210靠近第二端203，高溫部210是主要處理薄膜裝置211的區域，故薄膜裝置211是放置在高溫部210中。高溫部210中溫度可達攝氏450~550度，讓薄膜裝置211可在高溫部210中進行硒化反應，而在硒化反應進行期間，爐管201中的含硒氣體14會往低溫部220流動。含硒氣體14可為例如氮氣或氬氣等鈍氣混入一定比例氣態硒或硒化合物之流體。 低溫部220是靠近第一端202，低溫部220包括一凹陷部221、一氣密結構222與一閥門223。在本實施例中，氣密結構222為O形環。低溫部220可將爐管201中的含硒氣體14降溫至約攝氏250度或更低的溫度，避免過高的溫度使氣密結構222劣化而漏氣，因此低溫部220還適於保護氣密結構222。低溫部220之管壁中或管壁外側可設置冷卻裝置如冷卻管以容納冷卻流體，協助降低及/或維持低溫部之溫度。凹陷部221是設置於低溫部220之內側壁，且凹陷部221使低溫部220之凹陷部221處的內側壁與高溫部210之內側壁形成一段差D。當含硒氣體14因溫度差而自高溫部210進入低溫部220後，含硒氣體14之硒會因為溫度下降而冷凝，冷凝硒會沿著低溫部220之管壁向下流，並且累積在低溫部220之管壁底部，進入凹陷部221中。而在另一實施例中，請參閱圖2B，圖2B所繪示為另一實施例之反應性熱處理設備200。在此實施例中，凹陷部221還設有一容器224與該凹陷部嵌合，該容器224例如為坩鍋，可用於儲存經自含硒氣體14冷凝之液態硒。在硒化反應結束後可定期清理容器224累積之冷凝硒，必要時該容器可自該凹陷部取下，以方便清除堆積之冷凝硒。 在本實施例中，低溫部220中凹陷部221之外的內側壁是與高溫部210之內側壁切齊。並且，高溫部210與低溫部220是一整體的結構，故高溫部210與低溫部220採用相同的材料以一體成形的方式製成，例如為高溫部210與低溫部220的爐管203為一體成形之石英管；高溫部210與低溫部220亦可為不同材料套接的方式，例如高溫部210為石英管，低溫部220為不鏽鋼材質。此外，凹陷部221是形成於低溫部220的內側壁上，因此並未使爐管201之外徑改變。請參閱圖3A與圖3B，圖3A與圖3B所繪示為另一實施例之反應性熱處理設備200。在圖3A之實施例中，凹陷部221是凸出爐管201而形成。而在圖3B之實施例中，容器224則設置於凹陷部221下方，並與該凹陷部嵌合。凹陷部221可為一封閉部件如圖3A所示，或者凹陷部221可具有一開口如圖3B所示以與容器224嵌合。 當含硒氣體14因溫度差而自高溫部210進入低溫部220後，含硒氣體14之硒會因為溫度下降而冷凝，冷凝硒會沿著低溫部220之管壁向下流，並且累積在低溫部220之管壁底部，進入凹陷部221中。換言之，含硒氣體14因冷卻而冷凝的液態硒會被儲存在凹陷部221中，避免冷凝液態硒順著爐管201底部回流至高溫部210，再次氣化而改變爐管201內之含硒氣體14之硒濃度。如此一來，高溫部不再因為含硒氣體14之冷凝液態硒回流而導致高溫部210中的氣體濃度不穩定，進而影響處理薄膜裝置211的穩定性。 請參閱圖4，圖4所繪示為又一實施例之反應性熱處理設備300。本實施例之反應性熱處理設備300是由第一爐管312與第二爐管324連接而成，其中第二爐管324的截面積是大於第一爐管312的截面積。第二爐管324內形成低溫部320，第一爐管312內部則形成高溫部310，高溫部310與低溫部320之功效與前述實施例相似，故在此不再贅述。由於第一爐管312的管徑大於第二爐管324的管徑，因此在第一爐管312與第二爐管324接合之後，第一爐管312與第二爐管324的管徑差會在第一爐管312與第二爐管324的交界處形成一凹陷部321，且凹陷部321是延伸通過整個低溫部320。凹陷部321能夠儲存進入低溫部320而順著管壁向下流動的冷凝液態硒，避免冷凝液態硒回流至高溫部310。在本實施例中，第一爐管312與第二爐管324可以是相同材料，例如石英管或不鏽鋼管套接形成；也可以不同材料所形成，例如第一爐管312是以石英形成，第二爐管324則是以不鏽鋼形成。在某些實施例中，第一爐管312是以不鏽鋼形成，第二爐管324是以石英形成。 請參閱圖5及圖2A與圖2B，圖5所繪示為圖2A與圖2B中之反應性熱處理設備200的製作方法。首先，提供一爐管201（步驟A10），且爐管是沿著一方向而設置，該爐管201具有一第一端202與一第二端203，爐管201中包括了一高溫部210與低溫部220。其中，高溫部210是靠近第二端203，且高溫部210中放置了一薄膜裝置211；而低溫部220靠近第一端202，低溫部220中還具有一氣密結構222。在某些實施例中，高溫部210的長度是大於低溫部220的長度。接下來，在低溫部220中的內側壁形成一凹陷部221（步驟A20），且該凹陷部221與高溫部210之內側壁形成一段差。在某些實施例中，還形成一容器224與該凹陷部221嵌合，該容器224例如為坩鍋，可用於裝盛低溫部220中沉降的冷凝硒。此外，在本實施例中，低溫部220是以不鏽鋼形成。但在不同的實施例中，低溫部220與高溫部210可採用相同的材料形成，也能夠採用不同的材料形成。 請參閱圖6及圖4，圖6所繪示為另一實施例之圖4中之反應性熱處理設備300的製作方法。首先，提供一第一爐管312（步驟B10），第一爐管312是形成高溫部310，並且適於處理該薄膜裝置311。再來，提供一第二爐管324（步驟B20），第二爐管234還具有一氣密結構322，且第二爐管324能夠形成低溫部320，該低溫部320能夠保護氣密結構322。其中，第一爐管312的長度是大於第二爐管324的長度，且第二爐管324的截面積是大於第一爐管312的截面積。步驟B10與步驟B20之順序可互換。 接下來，將第一爐管312與第二爐管324接合（步驟B30），接合方式例如為燒結。由於二爐管324的截面積是大於第一爐管312的截面積，使得第一爐管312與第二爐管324之交界處形成一段差D（如圖4所示）。段差D則形成了凹陷部321，凹陷部321能夠儲存在低溫部320冷凝之液態硒。而段差D的存在能夠阻擋冷凝液態硒回流高溫部310，讓高溫部310硒化反應的氣體濃度保持穩定，進一步維持整個硒化反應過程穩定進行。 在本實施例中，反應性熱處理設備300是由第一爐管312與第二爐管324接合而成，第一爐管312與第二爐管324可採用相同材質，也能夠採用不同的材質。例如，第一爐管312採用石英材質，第二爐管324採用不鏽鋼材質；在另一實施例中，第一爐管312與第二爐管324均採用不鏽鋼材質；又在另一實施例中，第一爐管312與第二爐管324均採用石英材質。本領域具通常知識者應可得知，第一爐管312與第二爐管324的材質可根據反應性熱處理設備300的設計需求而更變。 本發明之反應性熱處理設備200、300在低溫部220、320中設置至有一凹陷部221、321，當含硒氣體14因溫度差從高溫部210、310流往低溫部220、320時，含硒氣體14的溫度降低便會讓硒冷凝成液態硒，冷凝液態硒會沿著低溫部220之管壁向下流，並且累積在低溫部220之管壁底部，再流入凹陷部221、321中，而不會順著爐管203、303回流至高溫部210、310，保持高溫部210、310中硒氣體濃度的穩定。因此，凹陷部221、321的設置能夠大幅度的提高薄膜裝置製成的穩定性。 本發明說明如上，然其並非用以限定本創作所主張之專利權利範圍。其專利保護範圍當視後附之申請專利範圍及其等同領域而定。凡本領域具有通常知識者，在不脫離本專利精神或範圍內，所作之更動或潤飾，均屬於本創作所揭示精神下所完成之等效改變或設計，且應包含在下述之申請專利範圍內。
10‧‧‧硒化爐
11‧‧‧高溫部
12‧‧‧低溫部
13‧‧‧閥門
14‧‧‧硒氣體
200、300‧‧‧反應性熱處理設備
201‧‧‧爐管
202、302‧‧‧第一端
203、303‧‧‧第二端
210、310‧‧‧高溫部
211、311‧‧‧薄膜裝置
220、320‧‧‧低溫部
221、321‧‧‧凹陷部
222、322‧‧‧氣密結構
223、323‧‧‧閥門
224‧‧‧容器
312‧‧‧第一爐管
324‧‧‧第二爐管
D‧‧‧段差
A10~A30‧‧‧流程圖步驟
B10~B30‧‧‧流程圖步驟
圖1所繪示為習知硒化過程之示意圖。 圖2A所繪示為第一實施例之反應性熱處理設備。 圖2B所繪示為另一實施例之反應性熱處理設備。 圖3A與圖3B所繪示為另一實施例之反應性熱處理設備。 圖4所繪示為又一實施例之反應性熱處理設備。 圖5所繪示為反應性熱處理設備的製作方法。 圖6所繪示為另一實施例之反應性熱處理設備的製作方法。
200‧‧‧反應性熱處理設備
201‧‧‧爐管
202‧‧‧第一端
203‧‧‧第二端
210‧‧‧高溫部
211‧‧‧薄膜裝置
220‧‧‧低溫部
221‧‧‧凹陷部
222‧‧‧氣密結構
223‧‧‧閥門

Claims (20)

  1. 一種反應性熱處理設備，適於處理一薄膜裝置，該反應性熱處理設備包括： 一爐管，沿著一方向延伸，具有一第一端與一第二端，該爐管還包括： 一高溫部，靠近該第二端，用於擺放該薄膜裝置； 一低溫部，靠近該第一端，具有一氣密結構；及 一閥門，設置於該第一端； 其中，該低溫部之一內側壁具有一凹陷部，此凹陷部與該高溫部的一內側壁形成一段差。
  2. 如申請專利範圍第1項所述之反應性熱處理設備，其中，該低溫部之該凹陷部以外之內側壁，是與該高溫部之內側壁切齊。
  3. 如申請專利範圍第1項所述之反應性熱處理設備，其中，該凹陷部是延伸通過整個該低溫部。
  4. 如申請專利範圍第1項所述之反應性熱處理設備，其中，該高溫部與該低溫部是以相同材料製成。
  5. 如申請專利範圍第4項所述之反應性熱處理設備，其中，該高溫部與該低溫部是以石英製成。
  6. 如申請專利範圍第4項所述之反應性熱處理設備，其中，該高溫部與該低溫部是一整體結構。
  7. 如申請專利範圍第1項所述之反應性熱處理設備，其中，該高溫部與該低溫部是以不同材料製成。
  8. 如申請專利範圍第7項所述之反應性熱處理設備，其中，該低溫部是以不鏽鋼製成。
  9. 如申請專利範圍第1項所述之反應性熱處理設備，還包括一容器，與該凹陷部嵌合。
  10. 如申請專利範圍第1項所述之反應性熱處理設備，其中，該高溫部之長度大於該低溫部之長度。
  11. 一種反應性熱處理設備的製造方法，包括： 提供一爐管，該爐管沿著一方向而設置，該爐管還包括一第一端與一第二端，該爐管包括一高溫部與一低溫部，該高溫部是靠近該第二端並用以放置一薄膜裝置，該低溫部靠近該第一端且還具有一氣密結構；及 在該低溫部之內側壁上形成一凹陷部，該凹陷部與該高溫部之內側壁形成一段差。
  12. 如申請專利範圍第11項所述之反應性熱處理設備的製造方法，還包括： 於該凹陷部形成一容器與該凹陷部嵌合。
  13. 如申請專利範圍第11項所述之反應性熱處理設備的製造方法，其中，該高溫部之長度大於該低溫部之長度。
  14. 如申請專利範圍第11項所述之反應性熱處理設備的製造方法，其中，該高溫部與該低溫部是以相同材料形成。
  15. 如申請專利範圍第11項所述之反應性熱處理設備的製造方法，其中，該高溫部與該低溫部是以不同材料形成。
  16. 如申請專利範圍第11項所述之反應性熱處理設備的製造方法，其中，該低溫部是以不鏽鋼形成。
  17. 一種反應性熱處理設備的製造方法，包括： 提供一第一爐管； 提供一第二爐管，該第二爐管具有一氣密結構，其中該第一爐管之長度大於該第二爐管之長度，該第二爐管之截面積大於該第一爐管之截面積； 接合該第一爐管與該第二爐管，使該第一爐管與該第二爐管之交界處形成一段差。
  18. 如申請專利範圍第17項所述之反應性熱處理設備的製造方法，其中，該第一爐管與該第二爐管為不鏽鋼材質。
  19. 如申請專利範圍第17項所述之反應性熱處理設備的製造方法，其中，該第一爐管與該第二爐管為石英材質。
  20. 如申請專利範圍第17項所述之反應性熱處理設備的製造方法，其中，該第一爐管為石英，該第二爐管為不鏽鋼。
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