TWI588622B - 測量一目標結構之一性質之方法、檢測裝置、微影系統及器件製造方法 - Google Patents

測量一目標結構之一性質之方法、檢測裝置、微影系統及器件製造方法 Download PDF

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Publication number
TWI588622B
TWI588622B TW104128716A TW104128716A TWI588622B TW I588622 B TWI588622 B TW I588622B TW 104128716 A TW104128716 A TW 104128716A TW 104128716 A TW104128716 A TW 104128716A TW I588622 B TWI588622 B TW I588622B
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Taiwan
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interest
target
image
candidate
pixel
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TW104128716A
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English (en)
Chinese (zh)
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TW201614383A (en
Inventor
慕拉特 波斯肯特
馬丁 賈庫柏斯 喬漢 賈克
派翠西斯 阿若瑟斯 約克伯 提那曼斯
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Ａｓｍｌ荷蘭公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/11—Region-based segmentation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20212—Image combination
    • G06T2207/20224—Image subtraction
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW104128716A 2014-09-01 2015-08-31 測量一目標結構之一性質之方法、檢測裝置、微影系統及器件製造方法 TWI588622B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP14183095 2014-09-01

Publications (2)

Publication Number Publication Date
TW201614383A TW201614383A (en) 2016-04-16
TWI588622B true TWI588622B (zh) 2017-06-21

Family

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TW104128716A TWI588622B (zh) 2014-09-01 2015-08-31 測量一目標結構之一性質之方法、檢測裝置、微影系統及器件製造方法
TW106114473A TWI634393B (zh) 2014-09-01 2015-08-31 測量一基板上之一目標結構之一性質之方法及檢測裝置

Family Applications After (1)

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TW106114473A TWI634393B (zh) 2014-09-01 2015-08-31 測量一基板上之一目標結構之一性質之方法及檢測裝置

Country Status (6)

Country Link
US (2) US9633427B2 (ko)
KR (1) KR101991762B1 (ko)
CN (1) CN107077079B (ko)
IL (1) IL250590B (ko)
TW (2) TWI588622B (ko)
WO (1) WO2016034428A2 (ko)

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CN107077079B (zh) 2014-09-01 2018-12-14 Asml荷兰有限公司 测量目标结构的属性的方法、检查设备、光刻***和器件制造方法
WO2016096524A1 (en) * 2014-12-19 2016-06-23 Asml Netherlands B.V. Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method
NL2018570A (en) * 2016-04-27 2017-11-01 Asml Holding Nv Image processing convolution algorithm for defect detection
US9940705B2 (en) * 2016-05-04 2018-04-10 Kla-Tencor Corporation System, method and computer program product for detecting defects in a fabricated target component using consistent modulation for the target and reference components
EP3293574A1 (en) 2016-09-09 2018-03-14 ASML Netherlands B.V. Metrology method, apparatus and computer program
KR20190113934A (ko) 2017-02-07 2019-10-08 에이에스엠엘 네델란즈 비.브이. 하전 입자 검출 방법 및 장치
US20180272526A1 (en) * 2017-03-21 2018-09-27 Seiko Epson Corporation Control device, teaching device, and robot system
US11067902B2 (en) * 2017-08-07 2021-07-20 Asml Netherlands B.V. Computational metrology
EP3451061A1 (en) 2017-09-04 2019-03-06 ASML Netherlands B.V. Method for monitoring a manufacturing process
WO2019063245A1 (en) 2017-09-28 2019-04-04 Asml Netherlands B.V. LITHOGRAPHIC METHOD
TW201923332A (zh) 2017-10-10 2019-06-16 荷蘭商Ａｓｍｌ荷蘭公司 度量衡方法和設備、電腦程式及微影系統
KR102507304B1 (ko) * 2017-10-30 2023-03-07 삼성전자주식회사 결함 검사 방법 및 이를 이용한 반도체 소자의 제조 방법
EP3489756A1 (en) 2017-11-23 2019-05-29 ASML Netherlands B.V. Method and apparatus to determine a patterning process parameter
KR20210096659A (ko) * 2018-12-31 2021-08-05 에이에스엠엘 네델란즈 비.브이. 계측 방법
CN111091598B (zh) * 2019-12-20 2023-08-25 武汉华工激光工程有限责任公司 多光斑同步测量分析方法及装置
CN115605811A (zh) * 2020-05-14 2023-01-13 Asml荷兰有限公司（Nl） 用于预测随机贡献方的方法
WO2021249711A1 (en) * 2020-06-10 2021-12-16 Asml Netherlands B.V. Metrology method, metrology apparatus and lithographic apparatus
CN112785665B (zh) * 2021-02-07 2024-01-19 武汉华工图像技术开发有限公司 光刻图像的生成方法、装置和电子设备

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Also Published As

Publication number Publication date
US9633427B2 (en) 2017-04-25
US20170206649A1 (en) 2017-07-20
TW201727391A (zh) 2017-08-01
WO2016034428A2 (en) 2016-03-10
CN107077079B (zh) 2018-12-14
US9940703B2 (en) 2018-04-10
TW201614383A (en) 2016-04-16
IL250590B (en) 2021-06-30
CN107077079A (zh) 2017-08-18
TWI634393B (zh) 2018-09-01
KR20170051477A (ko) 2017-05-11
KR101991762B1 (ko) 2019-06-21
US20160086324A1 (en) 2016-03-24
IL250590A0 (en) 2017-04-30
WO2016034428A3 (en) 2016-08-04

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