TWI588497B - Method for measuring dielectric coefficient of material - Google Patents
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- TWI588497B TWI588497B TW104125969A TW104125969A TWI588497B TW I588497 B TWI588497 B TW I588497B TW 104125969 A TW104125969 A TW 104125969A TW 104125969 A TW104125969 A TW 104125969A TW I588497 B TWI588497 B TW I588497B
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Description
本發明係有關於一種介電系數的量測方法,特別是一種物料的介電系數的量測方法。The invention relates to a method for measuring a dielectric constant, in particular to a method for measuring the dielectric constant of a material.
目前,料位感測器,例如時域反射雷達感測器,被廣泛地運用於料位量測;因此,料位感測器非常地重要。Currently, level sensors, such as time domain reflectance radar sensors, are widely used for level measurement; therefore, level sensors are very important.
然而,有很多因素會影響料位感測器的精確度,例如物料的介電系數。這是因為物料的介電系數會影響在物料中的量測訊號的往返時間,使得料位感測器的精確度被影響。However, there are many factors that can affect the accuracy of the level sensor, such as the dielectric constant of the material. This is because the dielectric constant of the material affects the round trip time of the measurement signal in the material, so that the accuracy of the level sensor is affected.
然而,目前在料位感測器,例如時域反射雷達感測器,安裝好之後,物料的介電系數並沒有被準確且方便地測量,使得料位感測器的精確度降低。However, at present, after the level sensor, such as the time domain reflection radar sensor, is installed, the dielectric constant of the material is not accurately and conveniently measured, so that the accuracy of the level sensor is lowered.
為改善上述習知技術之缺點,本發明之目的在於提供一種物料的介電系數的量測方法。In order to improve the above disadvantages of the prior art, it is an object of the present invention to provide a method for measuring the dielectric constant of a material.
為達成本發明之上述目的,本發明之物料的介電系數的量測方法係應用於一料位感測器、一桶槽及一物料,該料位感測器包含一料位感測電路及一探棒,該桶槽由上至下具有一未填充區以及充滿該物料的一填充區,該物料的介電系數的量測方法包含:將該料位感測器的該探棒***該桶槽內,使得該料位感測器的該探棒的一部分設置位於該桶槽之該未填充區內,且該料位感測器的該探棒的另一部分設置於該桶槽之該填充區內,且該料位感測器係位於一第一位置;在該料位感測器位於該第一位置之後,該料位感測器進行該物料的料位量測以得到一第一特徵值;在得到該第一特徵值之後,將該料位感測器垂直移動一垂直距離,使得該料位感測器的該探棒未完全地離開該桶槽之該填充區,且該料位感測器係位於一第二位置;在該料位感測器位於該第二位置之後,該料位感測器進行該物料的料位量測以得到一第二特徵值;該料位感測電路將該第一特徵值減去該第二特徵值以得到一特徵值變化量;及該料位感測電路計算該特徵值變化量以得到該物料的介電系數。In order to achieve the above object of the present invention, the method for measuring the dielectric constant of the material of the present invention is applied to a level sensor, a tank, and a material, and the level sensor includes a level sensing circuit. And a probe having an unfilled area from top to bottom and a filling area filled with the material, the method for measuring the dielectric coefficient of the material comprises: inserting the probe of the material level sensor a portion of the probe of the level sensor is disposed in the unfilled area of the tank, and another portion of the probe of the level sensor is disposed in the tank. In the filling area, the level sensor is located at a first position; after the level sensor is located at the first position, the level sensor performs the level measurement of the material to obtain a a first characteristic value; after the first characteristic value is obtained, the material level sensor is vertically moved by a vertical distance, so that the probe of the material level sensor does not completely leave the filling area of the barrel, And the level sensor is located at a second position; wherein the level sensor is located at the second position Afterwards, the level sensor performs a level measurement of the material to obtain a second characteristic value; the level sensing circuit subtracts the second characteristic value from the first characteristic value to obtain a characteristic value change amount. And the level sensing circuit calculates the amount of change in the characteristic value to obtain a dielectric coefficient of the material.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該料位感測器可為例如但本發明不限定為一時域反射雷達感測器。Moreover, in a specific embodiment, the method for measuring the dielectric constant of the material as described above, wherein the level sensor can be, for example, but the invention is not limited to a time domain reflection radar sensor.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該第一特徵值係為一第一走時差值。Furthermore, in a specific embodiment, the method for measuring the dielectric constant of the material as described above, wherein the first characteristic value is a first travel time difference.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該第二特徵值係為一第二走時差值。Moreover, in a specific embodiment, the method for measuring the dielectric constant of the material as described above, wherein the second characteristic value is a second travel time difference.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中當該料位感測器位於該第一位置時,該料位感測器的該探棒的一部分設置位於該桶槽之該未填充區內的長度係為一第一長度,且該料位感測器的該探棒的另一部分設置於該桶槽之該填充區內的長度係為一第二長度。Furthermore, in a specific embodiment, the method for measuring a dielectric constant of a material as described above, wherein when the level sensor is located at the first position, a portion of the probe of the level sensor The length of the unfilled area of the tank is set to a first length, and another part of the probe of the level sensor is disposed in the filling area of the tank. Two lengths.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該第一走時差值等於一第一時間加上一第二時間;該第一時間等於兩倍的該第一長度除以一空氣波速;該第二時間等於兩倍的該第二長度除以一物料波速。Furthermore, in a specific embodiment, the method for measuring a dielectric constant of a material as described above, wherein the first travel time difference is equal to a first time plus a second time; the first time is equal to twice The first length is divided by an air wave velocity; the second time is equal to twice the second length divided by a material wave velocity.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中一第三長度等於該第一長度加上該垂直距離;一第四長度等於該第二長度減掉該垂直距離。Furthermore, in a specific embodiment, the method for measuring the dielectric constant of the material as described above, wherein a third length is equal to the first length plus the vertical distance; and a fourth length is equal to the second length minus This vertical distance.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該第二走時差值等於一第三時間加上一第四時間;該第三時間等於兩倍的該第三長度除以該空氣波速;該第四時間等於兩倍的該第四長度除以該物料波速。Furthermore, in a specific embodiment, the method for measuring a dielectric constant of a material as described above, wherein the second travel time difference is equal to a third time plus a fourth time; the third time is equal to twice The third length is divided by the air wave velocity; the fourth time is equal to twice the fourth length divided by the material wave velocity.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該空氣波速係為一常數;該介電系數的平方根係為一平方根值;該物料波速等於該常數除以該平方根值。Furthermore, in a specific embodiment, the method for measuring the dielectric constant of the material as described above, wherein the air wave velocity is a constant; the square root of the dielectric coefficient is a square root value; the material wave velocity is equal to the constant Divide by the square root value.
再者,在一具體實施例,如上所述之物料的介電系數的量測方法,其中該料位感測器更包含一擴時電路;該擴時電路將該特徵值變化量乘以一增益值,使得該特徵值變化量的單位從微秒放大至毫秒。Furthermore, in a specific embodiment, the method for measuring a dielectric constant of a material as described above, wherein the level sensor further comprises a time-expanding circuit; the time-stamping circuit multiplies the characteristic value change by one The gain value is such that the unit of the characteristic value change amount is amplified from microseconds to milliseconds.
本發明之功效在於量測並計算物料的介電系數以提高料位感測器的精確度。The effect of the invention is to measure and calculate the dielectric constant of the material to improve the accuracy of the level sensor.
有關本發明的詳細說明及技術內容,請參閱以下的詳細說明和附圖說明如下,而附圖與詳細說明僅作為說明之用,並非用於限制本發明。The detailed description and the technical description of the present invention are to be understood as the
請參考圖1,其係為本發明之物料的介電系數的量測方法流程圖;並請同時參考圖2a,其係為該料位感測器位於該第一位置之示意圖;並請同時參考圖2b,其係為該料位感測器位於該第二位置之示意圖。Please refer to FIG. 1 , which is a flow chart of a method for measuring the dielectric constant of the material of the present invention; and please refer to FIG. 2 a , which is a schematic diagram of the material position sensor in the first position; Referring to FIG. 2b, it is a schematic diagram of the level sensor in the second position.
本發明之物料的介電系數的量測方法係應用於一料位感測器10、一桶槽20及一物料30;該料位感測器10包含一料位感測電路12及一探棒14;該桶槽20由上至下具有一未填充區22以及充滿該物料30的一填充區24;該料位感測器10可為例如但本發明不限定為一時域反射雷達感測器。該物料30的介電系數ε的量測方法包含下列步驟。The method for measuring the dielectric constant of the material of the present invention is applied to a level sensor 10, a tank 20 and a material 30; the level sensor 10 includes a level sensing circuit 12 and a probe The barrel 14 has an unfilled area 22 from top to bottom and a filling area 24 filled with the material 30; the level sensor 10 can be, for example, but not limited to a time domain reflected radar sensing. Device. The method of measuring the dielectric constant ε of the material 30 comprises the following steps.
首先,請參考圖1及圖2a。First, please refer to Figure 1 and Figure 2a.
步驟S02:將該料位感測器10的該探棒14***該桶槽20內,使得該料位感測器10的該探棒14的一部分設置位於該桶槽20之該未填充區22內,且該料位感測器10的該探棒14的另一部分設置於該桶槽20之該填充區24內,且該料位感測器10係位於一第一位置(即如圖2a所示)。Step S02: inserting the probe 14 of the level sensor 10 into the tank 20 such that a portion of the probe 14 of the level sensor 10 is disposed in the unfilled area 22 of the tank 20. The other part of the probe 14 of the level sensor 10 is disposed in the filling area 24 of the tank 20, and the level sensor 10 is located at a first position (ie, as shown in FIG. 2a) Shown).
步驟S04:在該料位感測器10位於該第一位置之後,該料位感測器10進行該物料30的料位量測以得到一第一特徵值(容後詳述)。Step S04: After the level sensor 10 is located at the first position, the level sensor 10 performs the level measurement of the material 30 to obtain a first characteristic value (described in detail later).
接著,請參考圖1及圖2b。Next, please refer to FIG. 1 and FIG. 2b.
步驟S06:在得到該第一特徵值之後,將該料位感測器10垂直移動一垂直距離Hair(或一垂直距離Hm),使得該料位感測器10的該探棒14未完全地離開該桶槽20之該填充區24,且該料位感測器10係位於一第二位置(即如圖2b所示)。其中,該垂直距離Hair即等於該垂直距離Hm。Step S06: After the first characteristic value is obtained, the level sensor 10 is vertically moved by a vertical distance Hair (or a vertical distance Hm), so that the probe 14 of the level sensor 10 is not completely The filling zone 24 of the tank 20 is exited, and the level sensor 10 is in a second position (i.e., as shown in Figure 2b). Wherein, the vertical distance Hair is equal to the vertical distance Hm.
步驟S08:在該料位感測器10位於該第二位置之後,該料位感測器10進行該物料30的料位量測以得到一第二特徵值(容後詳述)。Step S08: After the level sensor 10 is located at the second position, the level sensor 10 performs the level measurement of the material 30 to obtain a second characteristic value (described in detail later).
步驟S10:該料位感測電路12將該第一特徵值減去該第二特徵值以得到一特徵值變化量(容後詳述)。Step S10: The level sensing circuit 12 subtracts the second characteristic value from the first characteristic value to obtain a characteristic value change amount (described in detail later).
步驟S12:該料位感測電路12計算該特徵值變化量以得到該物料30的介電系數ε(容後詳述)。Step S12: The level sensing circuit 12 calculates the characteristic value change amount to obtain the dielectric coefficient ε of the material 30 (described in detail later).
以下內容將詳細敘述上述之步驟S02及步驟S04;請再次參考圖1及圖2a。The above steps S02 and S04 will be described in detail below; please refer to FIG. 1 and FIG. 2a again.
當該料位感測器10位於該第一位置(即如圖2a所示)時,該料位感測器10的該探棒14的一部分設置位於該桶槽20之該未填充區22內的長度係為一第一長度dair,且該料位感測器10的該探棒14的另一部分設置於該桶槽20之該填充區24內的長度係為一第二長度dm。When the level sensor 10 is in the first position (ie, as shown in FIG. 2a), a portion of the probe 14 of the level sensor 10 is disposed within the unfilled area 22 of the tank 20. The length is a first length dair, and another portion of the probe 14 of the level sensor 10 is disposed in the filling region 24 of the tub 20 to have a second length dm.
該第一特徵值係為一第一走時差值t1;該第一走時差值t1等於一第一時間t01加上一第二時間t02;該第一時間t01等於兩倍的該第一長度dair除以一空氣波速Vair;該第二時間t02等於兩倍的該第二長度dm除以一物料波速Vm。The first characteristic value is a first travel time difference t1; the first travel time difference t1 is equal to a first time t01 plus a second time t02; the first time t01 is equal to twice the first time The length dair is divided by an air wave velocity Vair; the second time t02 is equal to twice the second length dm divided by a material wave velocity Vm.
上述內容可以以下列公式表達:The above can be expressed in the following formula:
t1 = t01 + t02 = ( 2 * dair / Vair ) + ( 2 * dm / Vm )T1 = t01 + t02 = ( 2 * dair / Vair ) + ( 2 * dm / Vm )
以下內容將詳細敘述上述之步驟S06及步驟S08;請再次參考圖1及圖2b。一第三長度d3等於該第一長度dair加上該垂直距離Hair;一第四長度d4等於該第二長度dm減掉該垂直距離Hm(亦即,該第二長度dm等於該第四長度d4加上該垂直距離Hm)。The above steps S06 and S08 will be described in detail below; please refer to FIG. 1 and FIG. 2b again. a third length d3 is equal to the first length dair plus the vertical distance Hair; a fourth length d4 is equal to the second length dm minus the vertical distance Hm (that is, the second length dm is equal to the fourth length d4 Add this vertical distance Hm).
該第二特徵值係為一第二走時差值t2;該第二走時差值t2等於一第三時間t03加上一第四時間t04;該第三時間t03等於兩倍的該第三長度d3除以該空氣波速Vair;該第四時間t04等於兩倍的該第四長度d4除以該物料波速Vm。The second characteristic value is a second travel time difference t2; the second travel time difference t2 is equal to a third time t03 plus a fourth time t04; the third time t03 is equal to twice the third time The length d3 is divided by the air wave velocity Vair; the fourth time t04 is equal to twice the fourth length d4 divided by the material wave velocity Vm.
上述內容可以以下列公式表達:The above can be expressed in the following formula:
t2 = t03 + t04 = ( 2 * d3 / Vair ) + ( 2 * d4 / Vm ) = [ 2 * ( dair + Hair ) / Vair ] + [ 2 * (dm - Hm ) / Vm ]T2 = t03 + t04 = ( 2 * d3 / Vair ) + ( 2 * d4 / Vm ) = [ 2 * ( dair + Hair ) / Vair ] + [ 2 * (dm - Hm ) / Vm ]
其中,該垂直距離Hair即等於該垂直距離Hm。Wherein, the vertical distance Hair is equal to the vertical distance Hm.
以下內容將詳細敘述上述之步驟S10;該第一特徵值(即該第一走時差值t1)減去該第二特徵值(即該第二走時差值t2)等於該特徵值變化量;依據上述該些公式,該特徵值變化量等於負的兩倍的該垂直距離Hair除以該空氣波速Vair,再加上兩倍的該垂直距離Hm除以該物料波速Vm。The following step S10 will be described in detail; the first feature value (ie, the first travel time difference t1) minus the second feature value (ie, the second travel time difference t2) is equal to the eigenvalue change amount. According to the above formulas, the vertical distance Hair equal to twice the negative value is divided by the air wave velocity Vair, and twice the vertical distance Hm is divided by the material wave velocity Vm.
上述內容可以以下列公式表達:The above can be expressed in the following formula:
該特徵值變化量 = t1 - t2 = ( - 2 * Hair / Vair ) + ( 2 * Hm / Vm )The eigenvalue change amount = t1 - t2 = ( - 2 * Hair / Vair ) + ( 2 * Hm / Vm )
請參考圖3,其係為該第一走時差值及該第二走時差值之一具體實施例波形圖;並請圖時參考圖2a及圖2b。如圖3所示,在一具體實施例,因為該空氣波速Vair會大於該物料波速Vm,所以該第二走時差值t2將會短於該第一走時差值t1;亦即,該第一走時差值t1長於該第二走時差值t2。Please refer to FIG. 3 , which is a waveform diagram of a specific embodiment of the first travel time difference and the second travel time difference; and FIG. 2 a and FIG. 2 b . As shown in FIG. 3, in a specific embodiment, since the air wave velocity Vair is greater than the material wave velocity Vm, the second travel time difference t2 will be shorter than the first travel time difference t1; that is, the The first travel time difference t1 is longer than the second travel time difference t2.
以下內容將詳細敘述上述之步驟S12;計算該特徵值變化量以得到該物料30的介電系數ε。其中,該空氣波速Vair係為一常數c;該介電系數ε的平方根係為一平方根值√ε;該物料波速Vm等於該常數c除以該平方根值√ε。The above step S12 will be described in detail; the variation of the characteristic value is calculated to obtain the dielectric coefficient ε of the material 30. Wherein, the air wave velocity Vair is a constant c; the square root of the dielectric coefficient ε is a square root value √ ε; the material wave velocity Vm is equal to the constant c divided by the square root value √ ε.
上述內容可以以下列公式表達:The above can be expressed in the following formula:
Vm = c / √εVm = c / √ε
因此,該特徵值變化量 = t1 - t2 = ( - 2 * Hair / Vair ) + ( 2 * Hm / Vm ) = ( - 2 * Hair / c ) + [ 2 * Hm / ( c / √ε ) ] = ( - 2 * Hair / c ) + ( √ε * 2 * Hm / c ) = ( - 2 * Hair / c ) + ( √ε * 2 * Hair / c ) = 2 * Hair * ( √ε – 1 ) / cTherefore, the eigenvalue change amount = t1 - t2 = ( - 2 * Hair / Vair ) + ( 2 * Hm / Vm ) = ( - 2 * Hair / c ) + [ 2 * Hm / ( c / √ ε ) ] = ( - 2 * Hair / c ) + ( √ε * 2 * Hm / c ) = ( - 2 * Hair / c ) + ( √ε * 2 * Hair / c ) = 2 * Hair * ( √ε – 1 ) / c
因此,該特徵值變化量 * c / ( 2 * Hair ) = √ε – 1Therefore, the eigenvalue change amount * c / ( 2 * Hair ) = √ ε – 1
[該特徵值變化量 * c / ( 2 * Hair )] + 1 = √ε[The eigenvalue change amount * c / ( 2 * Hair )] + 1 = √ε
{[該特徵值變化量 * c / ( 2 * Hair )] + 1}2 = ε{[The eigenvalue change * c / ( 2 * Hair )] + 1}2 = ε
如前所述,該第一特徵值(即該第一走時差值t1)減去該第二特徵值(即該第二走時差值t2)等於該特徵值變化量,而該第一走時差值t1與該第二走時差值t2可由該料位感測器10得知,因此可得知該特徵值變化量。該常數c及該垂直距離Hair為已知;因此,藉由上述公式可得到該介電系數ε。As described above, the first feature value (ie, the first travel time difference t1) minus the second feature value (ie, the second travel time difference t2) is equal to the feature value change amount, and the first The travel time difference t1 and the second travel time difference t2 can be known by the level sensor 10, so that the characteristic value change amount can be known. The constant c and the vertical distance Hair are known; therefore, the dielectric coefficient ε can be obtained by the above formula.
藉由本發明之該物料30的該介電系數ε的量測方法得到該介電系數ε之後,即可利用該介電系數ε得到該物料30的深度;茲詳述如下。After the dielectric coefficient ε is obtained by the method for measuring the dielectric coefficient ε of the material 30 of the present invention, the depth of the material 30 can be obtained by using the dielectric coefficient ε;
請參考圖4a,其係為物料的深度的量測方法之一部分示意圖;並請同時參考圖4b,其係為物料的深度的量測方法之另一部分示意圖。Lm表示該物料30的深度;Lt表示該探棒14的探棒長度(亦即,該桶槽20的深度);t3表示第三走時差值;t4表示第四走時差值;因此,可得到下列公式。Please refer to FIG. 4a, which is a schematic diagram of one part of the measuring method of the depth of the material; and also refers to FIG. 4b, which is another part of the measuring method of the depth of the material. Lm represents the depth of the material 30; Lt represents the length of the probe of the probe 14 (i.e., the depth of the tank 20); t3 represents the third travel time difference; t4 represents the fourth travel time difference; The following formula is available.
t3 = [ 2 * ( Lt - Lm ) / Vair ] + ( 2 * Lm / Vm )T3 = [ 2 * ( Lt - Lm ) / Vair ] + ( 2 * Lm / Vm )
t4 = 2 * Lt / VairT4 = 2 * Lt / Vair
Vair = cVair = c
Vm = c / √εVm = c / √ε
t3 – t4 = ( - 2 * Lm / c ) + [ 2 * Lm / ( c / √ε ) ] = ( - 2 * Lm / c ) + ( 2 * Lm * √ε / c ) = 2 * Lm * ( √ε – 1 ) / cT3 – t4 = ( - 2 * Lm / c ) + [ 2 * Lm / ( c / √ ε ) ] = ( - 2 * Lm / c ) + ( 2 * Lm * √ ε / c ) = 2 * Lm * ( √ ε – 1 ) / c
由於該第三走時差值t3、該第四走時差值t4、該介電系數ε及該常數c為已知;因此,藉由上述公式可得到該物料30的深度Lm。Since the third travel time difference t3, the fourth travel time difference t4, the dielectric constant ε, and the constant c are known; therefore, the depth Lm of the material 30 can be obtained by the above formula.
再者,為增加該料位感測器10的可用性,該料位感測器10更包含一擴時電路(未顯示於圖2a、圖2b、圖4a及圖4b,且設置於該料位感測電路12之內);該擴時電路將上述之該特徵值變化量(即,t1 - t2,或是t3 – t4)乘以一增益值,使得該特徵值變化量的單位從微秒放大至毫秒;藉此,增加該料位感測器10的可用性。Moreover, in order to increase the usability of the level sensor 10, the level sensor 10 further includes a time-expanding circuit (not shown in FIG. 2a, FIG. 2b, FIG. 4a and FIG. 4b, and is disposed at the material level. The time-stamping circuit multiplies the above-mentioned eigenvalue change amount (ie, t1 - t2, or t3 - t4) by a gain value such that the unit of the eigenvalue change amount is from microseconds Zooming in to milliseconds; thereby increasing the usability of the level sensor 10.
本發明之功效在於量測並計算該物料30的介電系數ε以提高該料位感測器10的精確度。The effect of the present invention is to measure and calculate the dielectric coefficient ε of the material 30 to increase the accuracy of the level sensor 10.
然以上所述者,僅為本發明之較佳實施例,當不能限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾等,皆應仍屬本發明之專利涵蓋範圍意圖保護之範疇。本發明還可有其它多種實施例,在不背離本發明精神及其實質的情況下,熟悉本領域的技術人員當可根據本發明作出各種相應的改變和變形,但這些相應的改變和變形都應屬於本發明所附的權利要求的保護範圍。綜上所述,當知本發明已具有產業利用性、新穎性與進步性,又本發明之構造亦未曾見於同類產品及公開使用,完全符合發明專利申請要件,爰依專利法提出申請。However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the equivalent changes and modifications made by the scope of the present invention should still be covered by the patent of the present invention. The scope of the scope is intended to protect. The invention may be embodied in various other modifications and changes without departing from the spirit and scope of the inventions. It is intended to fall within the scope of the appended claims. In summary, it is known that the present invention has industrial applicability, novelty and advancement, and the structure of the present invention has not been seen in similar products and public use, and fully complies with the requirements of the invention patent application, and is filed according to the patent law.
10‧‧‧料位感測器10‧‧‧ level sensor
12‧‧‧料位感測電路12‧‧‧Level sensing circuit
14‧‧‧探棒14‧‧‧ Probe
20‧‧‧桶槽20‧‧‧ barrel
22‧‧‧未填充區22‧‧‧Unfilled area
24‧‧‧填充區24‧‧‧filled area
30‧‧‧物料30‧‧‧Materials
c‧‧‧常數C‧‧‧ constant
d3‧‧‧第三長度D3‧‧‧ third length
d4‧‧‧第四長度D4‧‧‧ fourth length
dair‧‧‧第一長度Dair‧‧‧first length
dm‧‧‧第二長度Dm‧‧‧second length
Hair‧‧‧垂直距離Hair‧‧‧Vertical distance
Hm‧‧‧垂直距離Hm‧‧‧ vertical distance
Lt‧‧‧探棒長度Lt‧‧‧ probe length
Lm‧‧‧深度Lm‧‧ depth
S02‧‧‧步驟S02‧‧‧Steps
S04‧‧‧步驟S04‧‧‧Steps
S06‧‧‧步驟S06‧‧‧Steps
S08‧‧‧步驟S08‧‧‧Steps
S10‧‧‧步驟S10‧‧‧ steps
S12‧‧‧步驟Step S12‧‧‧
t01‧‧‧第一時間T01‧‧‧First time
t02‧‧‧第二時間T02‧‧‧ second time
t03‧‧‧第三時間T03‧‧‧ third time
t04‧‧‧第四時間T04‧‧‧ fourth time
t1‧‧‧第一走時差值t1‧‧‧First time difference
t2‧‧‧第二走時差值t2‧‧‧Second time difference
t3‧‧‧第三走時差值T3‧‧‧ third time difference
t4‧‧‧第四走時差值T4‧‧‧ fourth time difference
Vair‧‧‧空氣波速Vair‧‧‧ air wave speed
Vm‧‧‧物料波速Vm‧‧‧ material wave velocity
ε‧‧‧介電系數ε‧‧‧Dielectric coefficient
√ε‧‧‧平方根值√ε‧‧ square root value
圖1為本發明之物料的介電系數的量測方法流程圖。1 is a flow chart of a method for measuring the dielectric constant of a material of the present invention.
圖2a為該料位感測器位於該第一位置之示意圖。Figure 2a is a schematic illustration of the level sensor in the first position.
圖2b為該料位感測器位於該第二位置之示意圖。Figure 2b is a schematic illustration of the level sensor in the second position.
圖3為該第一走時差值及該第二走時差值之一具體實施例波形圖。3 is a waveform diagram of one embodiment of the first travel time difference and the second travel time difference.
圖4a為物料的深度的量測方法之一部分示意圖。Figure 4a is a partial schematic view of a method for measuring the depth of a material.
圖4b為物料的深度的量測方法之另一部分示意圖。Figure 4b is a schematic illustration of another portion of the method for measuring the depth of the material.
S02~12‧‧‧步驟 S02~12‧‧‧ steps
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Citations (5)
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CN1200273C (en) * | 2001-08-07 | 2005-05-04 | 中国石油勘探开发研究院石油采收率研究所 | Measuring method and probe for degree of saturation containing oil |
CN1648618A (en) * | 2005-03-23 | 2005-08-03 | 中国铝业股份有限公司 | Continuous measuring method for high pressure container liquid level |
CN1330946C (en) * | 2000-04-04 | 2007-08-08 | 罗斯蒙德公司 | Method of detecting a material interface using a microwave level transmitter |
US7334451B1 (en) * | 2005-05-20 | 2008-02-26 | K-Tek Corporation | Level meter threshold detection system |
TW201314184A (en) * | 2011-09-30 | 2013-04-01 | Finetek Co Ltd | Proportion multiple switching object level measurement method and apparatus |
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CN1330946C (en) * | 2000-04-04 | 2007-08-08 | 罗斯蒙德公司 | Method of detecting a material interface using a microwave level transmitter |
CN1200273C (en) * | 2001-08-07 | 2005-05-04 | 中国石油勘探开发研究院石油采收率研究所 | Measuring method and probe for degree of saturation containing oil |
CN1648618A (en) * | 2005-03-23 | 2005-08-03 | 中国铝业股份有限公司 | Continuous measuring method for high pressure container liquid level |
US7334451B1 (en) * | 2005-05-20 | 2008-02-26 | K-Tek Corporation | Level meter threshold detection system |
TW201314184A (en) * | 2011-09-30 | 2013-04-01 | Finetek Co Ltd | Proportion multiple switching object level measurement method and apparatus |
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