TWI588277B - Deposition mask - Google Patents
Deposition mask Download PDFInfo
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- TWI588277B TWI588277B TW102139001A TW102139001A TWI588277B TW I588277 B TWI588277 B TW I588277B TW 102139001 A TW102139001 A TW 102139001A TW 102139001 A TW102139001 A TW 102139001A TW I588277 B TWI588277 B TW I588277B
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- Prior art keywords
- film
- metal member
- magnetic metal
- opening pattern
- pattern
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
- B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
- B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C21/00—Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
- B05C21/005—Masking devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/32—Processes for applying liquids or other fluent materials using means for protecting parts of a surface not to be coated, e.g. using stencils, resists
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
Description
本申請案係有關於一種成膜遮罩，特別是排除藉由蒸鍍材料通過時的開口邊緣部分所形成的陰影對成膜產生的影響，達成厚度均勻的薄膜圖形蒸鍍。 The present application relates to a film-forming mask, in particular, to the effect of shadow formed by the edge portion of the opening when the vapor-deposited material is passed, to achieve film formation, and to achieve uniform thickness film pattern evaporation.
以往的成膜遮罩係由薄的開口圖案形成層、較厚之支持層及接合該形成層與支持層之接合層構成之3層金屬層所形成，並將開口圖案形成層、支持層與接合層蝕刻而形成貫穿各層之貫穿開口(例如，參照日本特開2004-183024號公報)。 The conventional film formation mask is formed by a thin opening pattern forming layer, a thick supporting layer, and a three-layer metal layer formed by bonding a bonding layer of the forming layer and the supporting layer, and the opening pattern forming layer and the supporting layer are The bonding layer is etched to form a through opening penetrating the respective layers (for example, refer to Japanese Laid-Open Patent Publication No. 2004-183024).
在該情況下，對開口圖案形成層與支持層分別使用阻劑圖案來蝕刻，於開口圖案形成層設置最小寬度的開口圖案，於支持層設置寬度較開口圖案要大的貫穿孔。 In this case, the opening pattern forming layer and the supporting layer are respectively etched using a resist pattern, the opening pattern forming layer is provided with an opening pattern of a minimum width, and the supporting layer is provided with a through hole having a larger width than the opening pattern.
但是，此般以往的成膜遮罩中，由於開口圖案並未考慮到支持層厚度與蒸鍍材料朝遮罩面之最大入射角度所決定之蒸鍍陰影對成膜的影響而形成於貫穿孔內，在形成開口圖案及貫穿孔之各個阻劑圖案之對位有偏差的情況，開口圖案的一部分會受到該蒸鍍陰影部分的牽連，而有無法在基板上形成膜厚均勻的薄膜圖案之虞。 However, in the conventional film forming mask, the opening pattern is formed in the through hole without considering the influence of the thickness of the support layer and the maximum incident angle of the vapor deposition material on the mask surface on the film formation. In the case where the alignment pattern and the alignment of the respective resist patterns of the through holes are deviated, a part of the opening pattern is implicated by the vapor-deposited portion, and a film pattern having a uniform film thickness cannot be formed on the substrate. Hey.
於是，本發明因應上述問題點，目的在於提供一種成膜遮罩，係排除因蒸鍍材料通過開口緣部所產生之蒸鍍陰影對成膜產生的影響，而能達成厚度均勻薄膜圖案的蒸鍍。 Accordingly, the present invention has been made in view of the above problems, and an object thereof is to provide a film forming mask which eliminates the influence of vapor deposition shadows generated by a vapor deposition material through an opening edge portion on film formation, and can realize steaming of a uniform thickness film pattern. plating.
為達上述目的，第1發明之成膜遮罩係用以在基板上披覆蒸鍍材料而形成薄膜圖案的成膜遮罩，具備有：薄板狀磁性金屬構件，係在對應於該薄膜圖案的位置上設置較該薄膜圖案形狀尺寸要大的貫穿孔；以及樹脂製膜，係密接設置於該磁性金屬構件的一面，在該貫穿孔內於該薄膜圖案所對應的位置上形成有形狀尺寸與該薄膜圖案相同的開口圖案而讓可見光穿透；其中該開口圖案係形成在由該貫穿孔內之該磁性金屬構件厚度與該蒸鍍材料朝該薄膜面之最大入射角度所決定之蒸鍍陰影區域而圍繞的開口圖案形成區域內。 In order to achieve the above object, the film formation mask of the first aspect of the invention is a film formation mask for forming a thin film pattern by coating a vapor deposition material on a substrate, and is provided with a thin plate-shaped magnetic metal member corresponding to the film pattern. a through hole having a larger size than the shape of the film pattern; and a resin film formed to be closely attached to one surface of the magnetic metal member, and a shape size is formed in the through hole at a position corresponding to the film pattern The same opening pattern as the film pattern allows visible light to pass through; wherein the opening pattern is formed by evaporation of the thickness of the magnetic metal member in the through hole and the maximum incident angle of the vapor deposition material toward the film surface The opening pattern surrounded by the shaded area forms an area.
又，第2發明之成膜遮罩係用以在基板上披覆蒸鍍材料所形成固定配列間距排列之複數薄膜圖案之成膜遮罩，具備有：薄板狀磁性金屬構件，係設置有以和該薄膜圖案相同配列間距排列而形狀尺寸較該薄膜圖案要大的貫穿孔；以及樹脂製膜，係密接設置於該磁性金屬構件的一面，在該貫穿孔內於該薄膜圖案所對應之位置上形成有形狀尺寸與該薄膜圖案相同的開口圖案而讓可視光線穿透；其中該開口圖案係形成在由該貫穿孔內之該磁性金屬構件厚度與朝該蒸鍍材料薄膜面之最大入射角度所決定之蒸鍍陰影區域所圍繞的開口圖案形成區域內。 Further, the film formation mask of the second aspect of the invention is a film formation mask for coating a plurality of thin film patterns in which a vapor deposition material is formed at a fixed arrangement pitch on a substrate, and a thin plate-shaped magnetic metal member is provided And a through hole having a shape and a larger size than the film pattern; and a resin film is closely attached to one surface of the magnetic metal member, and the through hole is at a position corresponding to the film pattern. Forming an opening pattern having the same shape size as the film pattern to allow visible light to pass through; wherein the opening pattern is formed by a thickness of the magnetic metal member in the through hole and a maximum incident angle toward the film surface of the vapor deposition material The opening pattern formation area surrounded by the determined vapor deposition shadow area is determined.
該情況較佳地，該開口圖案形成區域之該貫穿孔的排列方向相同方向之寬度係等同於在至少與該貫穿孔的排列方向相同方向之該開口圖案的寬度加上相同方向的該開口圖案的位置偏差容許值的兩倍值之數值。 Preferably, the width of the through-holes of the opening pattern forming region in the same direction is the same as the width of the opening pattern in at least the same direction as the direction in which the through holes are arranged, plus the opening pattern in the same direction. The value of the positional deviation tolerance value is twice the value.
更佳地，該貫穿孔的排列方向寬度係等同於該貫穿孔的排列方向與相同方向的該開口圖案形成區域之寬度加上該貫穿孔的排列方向與相同方向之該蒸鍍陰影區域之寬度的兩倍值之數值。 More preferably, the width of the through holes is equal to the width of the through hole and the width of the opening pattern forming area in the same direction plus the arrangement direction of the through holes and the width of the vaporized shadow area in the same direction. The value of the double value.
該磁性金屬構件可為鎳、鎳合金、銦鋼或銦鋼合金。 The magnetic metal member may be nickel, a nickel alloy, an indium steel or an indium steel alloy.
又，該膜可為聚醯亞胺。 Also, the film may be a polyimine.
再者，較佳地，最好是將設有將該貫穿孔內包之大小的開口之框狀框體一端面接合於該磁性金屬構件一面之周緣區域。 Further, preferably, the frame-shaped frame body having the opening having the size of the through-hole is preferably joined to the peripheral region of one surface of the magnetic metal member.
1‧‧‧磁性金屬構件 1‧‧‧Magnetic metal components
2‧‧‧膜 2‧‧‧film
3、3a‧‧‧框狀框體 3, 3a‧‧‧ frame-like frame
4‧‧‧貫穿孔 4‧‧‧through holes
5‧‧‧開口圖案 5‧‧‧Open pattern
6‧‧‧蒸鍍陰影區域 6‧‧‧Dyeing shaded area
7‧‧‧開口圖案形成區域 7‧‧‧Open pattern forming area
9‧‧‧光阻遮罩的開口 9‧‧‧ Opening of the photoresist mask
10‧‧‧光阻遮罩 10‧‧‧Light-resistance mask
11‧‧‧基準圖案 11‧‧‧ reference pattern
12、12a、12b‧‧‧基準基板 12, 12a, 12b‧‧‧ reference substrate
W1‧‧‧寬度 W1‧‧‧Width
W2‧‧‧開口寬度 W2‧‧‧ opening width
W3‧‧‧X方向寬度 W3‧‧‧X direction width
W4‧‧‧寬度 W4‧‧‧Width
P‧‧‧配列間距 P‧‧‧ arrangement spacing
α‧‧‧位置偏差容許值 Α‧‧‧ position deviation tolerance
t‧‧‧厚度 T‧‧‧thickness
θ‧‧‧最大入射角 Θ‧‧‧maximum incident angle
圖1係顯示本發明成膜遮罩之實施型態的立體圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view showing an embodiment of a film forming mask of the present invention.
圖2係將圖1之部分剖面放大並上下顛倒顯示之A箭頭視圖。 Figure 2 is an A-arrow view showing a portion of the cross-section of Figure 1 enlarged and displayed upside down.
圖3係就本發明成膜遮罩之製造加以說明之工序圖，為顯示開口圖案形成前之工序的剖面圖。 Fig. 3 is a process view for explaining the manufacture of the film formation mask of the present invention, and is a cross-sectional view showing a step before the formation of the opening pattern.
圖4係說明該開口圖案形成工序之剖面圖，係顯示本發明成膜遮罩之磁性金屬構件與設置開口圖案形成目標之基準基板並無偏差的情況。 4 is a cross-sectional view showing the step of forming the opening pattern, and shows a case where the magnetic metal member of the film formation mask of the present invention does not deviate from the reference substrate on which the opening pattern formation target is provided.
圖5係說明該開口圖案形成工序之剖面圖，係顯示本發明成膜遮罩之磁性金屬構件與設置開口圖案形成目標之基準基板的對位偏差產生在容許範圍內之情況。 Fig. 5 is a cross-sectional view showing the step of forming the opening pattern, showing that the alignment deviation between the magnetic metal member of the film formation mask of the present invention and the reference substrate on which the opening pattern formation target is formed is within an allowable range.
以下，便基於添附圖式就本發明的實施型態進行詳細說明。圖1係顯示本發明成膜遮罩實施型態之立體圖；圖2係將圖1之部分剖面放大並上下顛倒顯示之A箭頭視圖。該成膜遮罩係用以在基板上披覆蒸鍍材料而形成有以固定配列間距排列之複數薄膜圖案者，係構成為具備有磁性金屬構件1、膜2及框體3。 Hereinafter, the embodiments of the present invention will be described in detail based on the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a mode of forming a film mask of the present invention; Fig. 2 is an arrow view showing an enlarged view of a portion of Fig. 1 and an upside down display. The film formation mask is formed by coating a vapor deposition material on a substrate and forming a plurality of thin film patterns arranged at a fixed arrangement pitch, and is configured to include the magnetic metal member 1, the film 2, and the frame 3.
該磁性金屬構件1，係由厚度在30μm~50μm左右之鎳、鎳合金、銦鋼或銦鋼合金等之磁性金屬材料所構成之薄板(片)狀物，設置有以與薄膜圖案相同配列間距排列而形狀尺寸較該薄膜圖案要大之貫穿孔4。 The magnetic metal member 1 is a thin plate (sheet) made of a magnetic metal material such as nickel, a nickel alloy, an indium steel or an indium steel alloy having a thickness of about 30 μm to 50 μm, and is provided with the same arrangement pitch as the film pattern. The through holes 4 are arranged to have a larger size than the film pattern.
該磁性金屬構件1的一面係密接而設有膜2。該膜2為厚度在10μm~30μm左右之聚醯亞胺或聚對苯二甲酸乙二酯(PET)等而讓可見光穿透之樹脂製膜，該磁性金屬構件1之貫穿孔4內在該薄膜圖案所對應之位置上係形成有與該薄膜圖案形狀尺寸相同之貫穿開口圖案5。 The film 2 is provided on one surface of the magnetic metal member 1 in close contact with each other. The film 2 is a resin film which is made of a polyimide or a polyethylene terephthalate (PET) having a thickness of about 10 μm to 30 μm and which is transparent to light. The through hole 4 of the magnetic metal member 1 is inside the film. A through-opening pattern 5 having the same shape and shape as that of the film pattern is formed at a position corresponding to the pattern.
在該情況下，開口圖案5如圖2所示，係形成於該貫穿孔4內之磁性金屬構件1的厚度t與蒸鍍材料朝膜2面之最大入射角度θ所決定之蒸鍍陰影區域6(t×tan θ)所圍繞之開口圖案形成區域7內。 In this case, as shown in FIG. 2, the opening pattern 5 is a vapor deposition shadow region determined by the thickness t of the magnetic metal member 1 formed in the through hole 4 and the maximum incident angle θ of the vapor deposition material toward the film 2 surface. 6 (t × tan θ) is surrounded by the opening pattern forming region 7.
於是較佳地，該開口圖案形成區域7之與該貫穿孔4排列方向(圖2所示X方向)相同方向的寬度W1最好是至少等同於與該貫穿孔4的排列方向(X方向)相同方向之開口圖案5的寬度W2加上相同方向開口圖案5的位置偏差容許值α的兩倍值之數值(W2+2α)。即為W1≧(W2+2α)。 Therefore, preferably, the width W1 of the opening pattern forming region 7 in the same direction as the direction in which the through holes 4 are arranged (the X direction shown in FIG. 2) is at least equivalent to the direction of alignment with the through holes 4 (X direction). The width W2 of the opening pattern 5 in the same direction is added to the value (W2+2α) which is twice the value of the positional deviation allowable value α of the same direction opening pattern 5. That is, W1≧ (W2+2α).
開口圖案形成區域7之X方向寬度W1為了達到如前述般至少等同於X方向之開口圖案5的寬度W2加上相同方向開口圖案5的位置偏差容許值α的兩倍值之數值(W2+2 α)的寬度，可調整磁性金屬構件1的厚度t及該磁性金屬構件1的鄰接貫穿孔4之間的部分之鄰接方向(X方向)的寬度W3之至少任一方。 The width W1 of the opening pattern forming region 7 in the X direction is equal to the width W2 of the opening pattern 5 at least equal to the X direction as described above plus the value of the positional deviation tolerance value α of the same direction opening pattern 5 (W2+2) At least one of the thickness t of the magnetic metal member 1 and the width W3 of the adjacent direction (X direction) of the portion of the magnetic metal member 1 adjacent to the through hole 4 can be adjusted.
更加詳細來說，在互相鄰接之開口圖案5間之間隔相當充裕的時候，係設定磁性金屬構件1之厚度t在能確保具有足夠剛性的厚度後，可以使得以蒸鍍陰影區域6所圍繞之開口圖案形成區域7的X方向寬度W1等同於(W2+2 α)之方式，來決定磁性金屬構件1的鄰接貫穿孔4之間的部分之X方向的寬度W3。 More specifically, when the interval between the mutually adjacent opening patterns 5 is relatively sufficient, it is set that the thickness t of the magnetic metal member 1 can be surrounded by the vaporized shadow region 6 after ensuring a sufficiently rigid thickness. The width W1 of the opening pattern forming region 7 in the X direction is equivalent to (W2+2 α), and the width W3 in the X direction of the portion of the magnetic metal member 1 adjacent to the through hole 4 is determined.
相反地，在互相鄰接之開口圖案5間之間隔並不十分充裕的時候，首先，係設定磁性金屬構件1的鄰接貫穿孔4之間的部分之X方向的寬度W3後，亦可使開口圖案形成區域7之X方向的寬度W1至少等同於(W2+2 α)之方式，來決定磁性金屬構件1之厚度t而調整蒸鍍陰影範圍6之寬度。 On the other hand, when the interval between the mutually adjacent opening patterns 5 is not sufficiently high, first, the width W3 of the portion of the magnetic metal member 1 adjacent to the through hole 4 in the X direction is set, and the opening pattern can also be made. The width W1 of the formation region 7 in the X direction is at least equal to (W2+2 α), and the thickness t of the magnetic metal member 1 is determined to adjust the width of the vapor deposition shadow range 6.
如此般，對應於欲形成之開口圖案5之配列間距P(等同於薄膜圖案的配列間距)，適當地設定磁性金屬構件1的厚度t及鄰接貫穿孔4之間的部分X方向寬度W3。 In this manner, the thickness t of the magnetic metal member 1 and the portion X-direction width W3 between the adjacent through-holes 4 are appropriately set in accordance with the arrangement pitch P of the opening patterns 5 to be formed (equivalent to the arrangement pitch of the film patterns).
該磁性金屬構件1的一面周緣區域係將一端面3a接合而設置有設有將複數貫穿孔4內包之大小的開口8(參照圖3(d))之框狀框體3。該框體3為支持架設有磁性金屬構件1及膜2者，係由厚度為數mm~數10mm之熱膨脹係數小的銦鋼或銦鋼合金所形成。 In the peripheral edge region of one surface of the magnetic metal member 1, a frame-like housing 3 having an opening 8 (see FIG. 3(d)) having a size that encloses a plurality of through holes 4 is formed by joining one end surface 3a. The frame 3 is a support metal frame 1 and a film 2, and is formed of an indium steel or an indium steel alloy having a small thermal expansion coefficient of several mm to several 10 mm.
接著，對此般構成的成膜遮罩之製造進行說明。在此，係對欲製造之成膜遮罩的規格在以下之情況進行說明。 Next, the manufacture of the film formation mask configured as above will be described. Here, the specifications of the film formation mask to be manufactured will be described below.
(成膜遮罩的規格) (Specification of film mask)
●開口圖案5(帶狀圖案)的開口寬度：W2 Opening width of opening pattern 5 (band pattern): W2
●開口圖案5的配列間距：P ● Arrangement spacing of the opening pattern 5: P
●開口位置5的位置偏差容許值：α ● Position deviation tolerance value of opening position 5: α
又，在以下說明中，係就θ為蒸鍍材料對遮罩面之最大入射角度，厚度t為使用預定之磁性金屬構件1的情況加以闡述。 In the following description, θ is a case where the vapor deposition material has a maximum incident angle with respect to the mask surface, and the thickness t is a case where the predetermined magnetic metal member 1 is used.
首先，在厚度為t之薄板狀銦鋼所構成之磁性金屬構件1的一面上噴塗例如液狀聚醯亞胺之後，乾燥形成厚度均勻之聚醯亞胺膜2(參照圖3(a))。 First, a liquid polyimine is sprayed on one surface of a magnetic metal member 1 made of a thin plate-shaped indium steel having a thickness of t, and then dried to form a polyimide 19 having a uniform thickness (see FIG. 3(a)). .
接著，在磁性金屬構件1的另面上塗布例如正型光阻而乾燥後，例如使用在欲形成貫穿孔4的部分有開口之光罩而將該光阻曝光。之後顯影而形成在欲形成貫穿孔4的部分有開口9的阻劑遮罩10(參照圖3(b))。 Next, after drying, for example, a positive type resist is applied to the other surface of the magnetic metal member 1, the photoresist is exposed, for example, by using a mask having an opening in a portion where the through hole 4 is to be formed. Thereafter, development is performed to form a resist mask 10 having an opening 9 in a portion where the through hole 4 is to be formed (see FIG. 3(b)).
在該情況，基於該成膜遮罩的規格算出開口圖案形成區域7的寬度W1為(W2+2 α)。又，因為磁性金屬構件1之厚度為t，蒸鍍材料對遮罩面之最大入射角為θ，所以蒸鍍陰影區域6的寬度為t×tan θ。因此，欲形成在磁性金屬構件1上之貫穿孔4的寬度W4為，W4=W1+2t×tan θ=W2+2 α+2t×tan θ。因此，阻劑遮罩10的開口9係寬度為W4之帶狀圖案。 In this case, the width W1 of the opening pattern forming region 7 is calculated to be (W2+2 α) based on the specifications of the film formation mask. Further, since the thickness of the magnetic metal member 1 is t, the maximum incident angle of the vapor deposition material to the mask surface is θ, so the width of the vapor deposition shadow region 6 is t × tan θ. Therefore, the width W4 of the through hole 4 to be formed on the magnetic metal member 1 is W4 = W1 + 2t × tan θ = W2 + 2 α + 2t × tan θ. Therefore, the opening 9 of the resist mask 10 is a stripe pattern having a width W4.
接著，使用該光阻遮罩10而蝕刻磁性金屬構件1。藉此，便在磁性金屬構件1以配列間距P形成有至該膜2面之寬度為W4之帶狀貫穿孔4(參照圖3(c))。於此，依照磁性金屬構件1之材料來選擇使用適當的蝕刻液。 Next, the magnetic metal member 1 is etched using the photoresist mask 10. Thereby, the magnetic metal member 1 is formed with a strip-shaped through hole 4 having a width W4 to the surface of the film 2 at the arrangement pitch P (see FIG. 3(c)). Here, an appropriate etching liquid is selected in accordance with the material of the magnetic metal member 1.
該情況下，鄰接貫穿孔4的部分之寬度W3為，W3=P-W4=P-W2-2(α+t×tan θ)。 In this case, the width W3 of the portion adjacent to the through hole 4 is W3 = P - W4 = P - W2 - 2 (α + t × tan θ).
之後，將該金屬構件1之周緣區域所對應之膜2的部分以雷射加工除去，讓磁性金屬構件1之周緣區域的部分露出後，將附有膜2之該磁性金屬構件1架設於框狀框體3之一端面3a，將磁性金屬構件1之周緣部分與框體3之一端面3a點焊而將框體3接合於磁性金屬構件1(參考圖3(d))。 Thereafter, the portion of the film 2 corresponding to the peripheral region of the metal member 1 is removed by laser processing, and the portion of the peripheral portion of the magnetic metal member 1 is exposed, and then the magnetic metal member 1 with the film 2 attached thereto is placed in the frame. One end surface 3a of the frame 3 is spot-welded to the end surface 3a of the frame 3 by the peripheral edge portion of the magnetic metal member 1, and the frame 3 is joined to the magnetic metal member 1 (see Fig. 3(d)).
接著，設置有該貫穿孔4之附有膜2之磁性金屬構件1，係定位載置在預先形成有成為開口圖案5之形成目標之基準圖案11的基準基板12上。此時，係以膜2成為基準基板12側之方式而載置於基準基板上(參照圖3(e))。又，基準基板12亦可將形成有基準圖案11之面12a為下側面，讓膜2密合於該面12a的相對側之面12b。藉此，在膜2以雷射加工形成開口圖案5時，可避免基準圖案11受到損傷。 Next, the magnetic metal member 1 provided with the film 2 in the through hole 4 is placed and placed on the reference substrate 12 on which the reference pattern 11 which is the target of formation of the opening pattern 5 is formed in advance. At this time, the film 2 is placed on the reference substrate so as to be on the side of the reference substrate 12 (see FIG. 3( e )). Further, the reference substrate 12 may have the lower surface of the surface 12a on which the reference pattern 11 is formed, and the film 2 may be adhered to the surface 12b on the opposite side of the surface 12a. Thereby, when the opening pattern 5 is formed by laser processing on the film 2, the reference pattern 11 can be prevented from being damaged.
接著，對該基準圖案11所對應之膜2之部分使用例如波長在400nm以下 之例如KrF248nm之準分子雷射來照射雷射光L，而將膜2雷射加工。藉此，膜2便會形成有寬度為W2之帶狀開口圖案5(參照圖4(a)、(b))。該情況，事先以攝像相機拍攝該基準圖案11來檢出該基準圖案11之位置，基於該檢出結果來相對移動基準基板12及省略圖式之雷射加工裝置而將雷射光L定位在基準圖案11上後，實施膜2之雷射加工。另外，圖4(a)、(b)係表示在基準基板12與磁性金屬構件1之對位中，無位置偏差的情況。該情況，開口圖案5係形成在磁性金屬構件1之貫穿孔4中央，當然地便可排除在蒸鍍時蒸鍍陰影的影響。 Next, for example, a portion of the film 2 corresponding to the reference pattern 11 is used, for example, having a wavelength of 400 nm or less. For example, a KrF 248 nm excimer laser is used to illuminate the laser beam L, and the film 2 is laser processed. Thereby, the film 2 has a strip-shaped opening pattern 5 having a width W2 (see FIGS. 4(a) and 4(b)). In this case, the position of the reference pattern 11 is detected by the imaging camera in advance, and the laser beam L is positioned relative to the reference substrate 12 and the laser processing apparatus of the drawing based on the detection result. After the pattern 11 is applied, the laser processing of the film 2 is performed. 4(a) and 4(b) show a case where there is no positional deviation in the alignment between the reference substrate 12 and the magnetic metal member 1. In this case, the opening pattern 5 is formed in the center of the through hole 4 of the magnetic metal member 1, and of course, the influence of the vapor deposition shadow at the time of vapor deposition can be excluded.
如圖5(a)所示，在基準基板12與金屬構件1之對位在位置偏差容許值α內有偏差的情況，由雷射加工形成之開口圖案5的位置如同圖(b)所示，係會從磁性金屬構件1之貫穿孔4中央於X方向形成最大α的偏差。但是，由於磁性金屬構件1之貫穿孔4之寬度W4係以(W2+2 α+2t×tan θ)之方式所形成，故即便開口圖案5的位置偏差量為容許極限α，開口圖案5仍會形成在蒸鍍陰影區域6所圍繞之區域內，而可排除在蒸鍍時對蒸鍍陰影成膜的影響。 As shown in FIG. 5(a), when the alignment between the reference substrate 12 and the metal member 1 is within the positional deviation tolerance value α, the position of the opening pattern 5 formed by laser processing is as shown in FIG. The deviation of the maximum α is formed in the X direction from the center of the through hole 4 of the magnetic metal member 1. However, since the width W4 of the through hole 4 of the magnetic metal member 1 is formed by (W2+2 α+2t×tan θ), even if the positional deviation amount of the opening pattern 5 is the allowable limit α, the opening pattern 5 is still It is formed in the region surrounded by the vapor-deposited shadow region 6, and the influence on the vapor deposition shadow film formation at the time of vapor deposition can be excluded.
如此般根據本發明，便可排除因磁性金屬構件之貫穿孔緣部所產生的蒸鍍陰影對成膜的影響而執行厚度均勻之薄膜圖案的蒸鍍。因此，在例如以蒸鍍形成有機EL顯示面板之有機EL層時，可形成膜厚均勻之有機EL層，並可橫跨顯示面板整面而獲得均勻的發光特性。 According to the present invention as described above, it is possible to eliminate the vapor deposition of the film pattern having a uniform thickness due to the influence of the vapor deposition shadow generated by the through hole edge portion of the magnetic metal member on the film formation. Therefore, when the organic EL layer of the organic EL display panel is formed by vapor deposition, for example, an organic EL layer having a uniform film thickness can be formed, and uniform light-emitting characteristics can be obtained across the entire surface of the display panel.
另外，在本說明中，雖已就將薄膜圖案以固定配列間距排列形成的成膜遮罩加以闡述，但本發明並不限於此，薄膜圖案之配列亦可為不規則。該情況亦同，如果成膜遮罩之開口圖案5係設置在貫穿口4內之磁性金屬構件1之厚度與蒸鍍材料朝膜2面之最大入射角度θ所決定之蒸鍍陰影區域6所圍繞之開口圖案形成範圍7內話，便可排除蒸鍍時該蒸鍍陰影成膜的影響，而可形成均勻厚度之薄膜圖案。 Further, in the present description, the film formation mask in which the film patterns are arranged at a fixed arrangement pitch is described. However, the present invention is not limited thereto, and the arrangement of the film patterns may be irregular. In this case as well, if the opening pattern 5 of the film formation mask is the vapor deposition shadow area 6 determined by the thickness of the magnetic metal member 1 provided in the through hole 4 and the maximum incident angle θ of the vapor deposition material toward the film 2 surface. By forming the range of the opening pattern 7 around the opening pattern, the effect of the vapor deposition shadow film formation at the time of vapor deposition can be eliminated, and a film pattern having a uniform thickness can be formed.
1‧‧‧磁性金屬構件 1‧‧‧Magnetic metal components
2‧‧‧膜 2‧‧‧film
4‧‧‧貫穿孔 4‧‧‧through holes
5‧‧‧開口圖案 5‧‧‧Open pattern
6‧‧‧蒸鍍陰影區域 6‧‧‧Dyeing shaded area
7‧‧‧開口圖案形成區域 7‧‧‧Open pattern forming area
W1‧‧‧寬度 W1‧‧‧Width
W2‧‧‧開口寬度 W2‧‧‧ opening width
W3‧‧‧X方向寬度 W3‧‧‧X direction width
P‧‧‧配列間距 P‧‧‧ arrangement spacing
α‧‧‧位置偏差容許值 Α‧‧‧ position deviation tolerance
t‧‧‧厚度 T‧‧‧thickness
θ‧‧‧最大入射角 Θ‧‧‧maximum incident angle
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| WO2014069049A1 (en) | 2014-05-08 |
| JP2014088594A (en) | 2014-05-15 |
| TW201422829A (en) | 2014-06-16 |
| KR20150079908A (en) | 2015-07-08 |
| KR102155258B1 (en) | 2020-09-11 |
| CN104755648B (en) | 2018-04-03 |
| US10035162B2 (en) | 2018-07-31 |
| CN104755648A (en) | 2015-07-01 |
| US20150290667A1 (en) | 2015-10-15 |
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