TWI583648B - Chemical grinding equipment - Google Patents
Chemical grinding equipment Download PDFInfo
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- TWI583648B TWI583648B TW102119914A TW102119914A TWI583648B TW I583648 B TWI583648 B TW I583648B TW 102119914 A TW102119914 A TW 102119914A TW 102119914 A TW102119914 A TW 102119914A TW I583648 B TWI583648 B TW I583648B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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Description
本發明係有關化學研磨裝置,其構成為,對被連續性搬運的複數個玻璃基板進行化學研磨處理。 The present invention relates to a chemical polishing apparatus configured to chemically polish a plurality of glass substrates that are continuously conveyed.
為了將玻璃基板薄型化,一般來說必須使用含有氫氟酸的化學研磨液來對玻璃基板進行化學研磨處理。這樣的化學研磨處理,舉例來說有批次式化學研磨,亦即將欲處理之玻璃基板在放入有化學研磨液的槽內浸漬規定時間;及單片式化學研磨,亦即將欲處理之玻璃基板以搬運輥(roller)依序搬運,同時噴灑化學研磨液。 In order to reduce the thickness of the glass substrate, it is generally necessary to chemically polish the glass substrate using a chemical polishing liquid containing hydrofluoric acid. Such a chemical grinding treatment is, for example, batch chemical polishing, in which a glass substrate to be treated is immersed in a tank in which a chemical polishing liquid is placed for a predetermined time; and a monolithic chemical polishing, which is also a glass to be processed. The substrate is sequentially transported by a roller and sprayed with a chemical slurry.
這些化學研磨方式當中,批次方式研磨,是藉由將欲處理之玻璃基板在研磨液浴槽內浸漬規定時間,來使玻璃基板薄板化至所需板厚,其具有一次能夠處理多量玻璃基板之優點。不過,批次方式研磨,至少具有以下的問題點。 Among these chemical polishing methods, batch polishing is performed by immersing the glass substrate to be treated in a polishing bath for a predetermined period of time to thin the glass substrate to a desired thickness, which has a large amount of glass substrate at a time. advantage. However, batch mode grinding has at least the following problems.
首先,批次方式研磨中,研磨液浴槽係為對上方開放之構造,會造成研磨液浴槽的周圍成為濃氫氟酸環境之問題。特別是,在對研磨液浴槽的研磨液進行起泡 (bubbling)處理的情形下,氣體狀的氫氟酸容易擴散至周圍,是其問題點。在這樣的氫氟酸環境中作業的作業員,若沒有穿戴適當的保護裝備而作業,恐會損害健康。因此,支付給作業員的保護裝備成本會變高。 First, in the batch type polishing, the polishing liquid bath is a structure that is open to the upper side, which causes a problem that the periphery of the polishing liquid bath becomes a concentrated hydrofluoric acid environment. In particular, foaming the slurry in the bath of the slurry In the case of (bubbling) treatment, gaseous hydrofluoric acid easily diffuses to the surroundings, which is a problem. Workers working in such a hydrofluoric acid environment may be harmed if they do not wear appropriate protective equipment. Therefore, the cost of protecting equipment paid to the operator will become higher.
此外,批次方式研磨中,為了消除研磨液浴槽周圍的濃氫氟酸環境,必須有強力的洗氣器(scrubber)等排氣設備,會使設備成本增大。再者,設備會因為氫氟酸氣體而易發生腐蝕,故為了施以適當的防蝕處理而花費成本,或設備的更換頻率變多而花費成本,也是其問題。 Further, in the batch type polishing, in order to eliminate the concentrated hydrofluoric acid environment around the polishing bath, it is necessary to have a strong exhaust device such as a scrubber, which increases the equipment cost. Further, since the equipment is liable to be corroded by the hydrofluoric acid gas, it is also costly to impose an appropriate anti-corrosion treatment, or to increase the frequency of replacement of the equipment and cost.
鑑此,近年來有人使用單片方式的化學研磨處理。舉例來說,在習知技術中有一種平板顯示器玻璃基板蝕刻裝置,其構成為,藉由能夠附著玻璃基板的治具來將玻璃基板縱向支撐,並在搬運治具的同時對玻璃基板噴射化學研磨液(例如參照專利文獻1)。 In view of this, in recent years, a single-piece chemical polishing treatment has been used. For example, in the prior art, there is a flat panel display glass substrate etching apparatus configured to longitudinally support a glass substrate by a jig capable of attaching a glass substrate, and to eject a chemical to the glass substrate while carrying the jig. The polishing liquid (for example, refer to Patent Document 1).
[專利文獻1]:日本特開2008-266135號公報 [Patent Document 1]: JP-A-2008-266135
然而,專利文獻1記載之技術中,依然不得不使用用來支撐玻璃基板的治具。因此,如同上述批次式 化學研磨裝置般,準備治具的費用高,且還有玻璃基板上容易產生治具痕跡的問題。一旦玻璃基板產生治具痕跡,則要做高效率的倒角設計就極為困難,故會使得倒角效率降低,造成不便。 However, in the technique described in Patent Document 1, it is still necessary to use a jig for supporting a glass substrate. Therefore, like the above batch Like the chemical polishing apparatus, the cost of preparing the jig is high, and there is also a problem that the jig is easily generated on the glass substrate. Once the glass substrate produces a fixture trace, it is extremely difficult to make a high-efficiency chamfer design, which causes the chamfering efficiency to be lowered, causing inconvenience.
本發明係有鑑於上述課題而研發,提供一種單片式的化學研磨裝置,其不需使用治具,也可對玻璃基板施以化學研磨處理。 The present invention has been developed in view of the above problems, and provides a one-piece chemical polishing apparatus which can perform chemical polishing treatment on a glass substrate without using a jig.
本發明之化學研磨裝置,其構成為,對被連續性搬運的複數個玻璃基板進行化學研磨處理。該化學研磨裝置至少具備:複數個搬運輥,構成為將玻璃基板於水平方向搬運;及一或複數個處理腔室,構成為對被複數個搬運輥搬運之玻璃基板進行化學研磨處理。處理腔室至少具有處理槽及回收槽。處理槽是構成為,化學研磨液會在比被搬運輥搬運之玻璃基板還高的位置溢流。回收槽是構成為,回收從處理槽溢流之化學研磨液。 The chemical polishing apparatus of the present invention is configured to chemically polish a plurality of glass substrates that are continuously conveyed. The chemical polishing apparatus includes at least a plurality of conveyance rollers configured to convey the glass substrate in a horizontal direction, and one or a plurality of processing chambers configured to chemically polish the glass substrate conveyed by the plurality of conveyance rollers. The processing chamber has at least a processing tank and a recovery tank. The treatment tank is configured such that the chemical polishing liquid overflows at a position higher than the glass substrate conveyed by the conveyance roller. The recovery tank is configured to recover a chemical slurry that overflows from the treatment tank.
此構成中,被搬運輥依序搬運的玻璃基板,會在處理腔室中與溢流的化學研磨液接觸,藉此於腔室內依序地進行化學研磨處理。此時,玻璃基板係僅被搬運輥部分地支撐,且玻璃基板的特定處不會常時與搬運輥接觸,故不會像使用治具時一樣產生治具痕跡。處理腔室的數量只要有單一個即可實施本發明,但較佳為複數個。其理由在於,若以單一處理腔室構成的情形下,處理腔室內 的槽或配管等容易巨大化,其結果會容易變得難以進行溢流控制、及因應配管熱變形或應力變形等。 In this configuration, the glass substrate sequentially conveyed by the conveyance roller is brought into contact with the overflow chemical polishing liquid in the processing chamber, whereby the chemical polishing treatment is sequentially performed in the chamber. At this time, the glass substrate is partially supported only by the conveyance roller, and the specific portion of the glass substrate does not always come into contact with the conveyance roller, so that the fixture trace is not generated as in the case of using the jig. The number of processing chambers can be carried out as long as there is a single one, but it is preferably plural. The reason is that, in the case of a single processing chamber, the processing chamber The grooves, piping, and the like are easily enlarged, and as a result, it is difficult to perform overflow control, thermal deformation or stress deformation in accordance with piping.
設置複數個處理腔室的情形下,較佳是,在各處理腔室之間分別設置中繼部,中繼部至少具有處理槽,該處理槽是構成為,化學研磨液會在比被搬運輥搬運之玻璃基板還高的位置溢流。其理由在於,藉由在中繼部也使玻璃基板與化學研磨液接觸,會防止玻璃基板從處理腔室被搬運到下一處理腔室的期間表面變乾,而發生化學研磨不均等問題。 In the case where a plurality of processing chambers are provided, it is preferable to provide a relay portion between the processing chambers, and the relay portion has at least a processing tank configured to move the chemical polishing liquid in a ratio The glass substrate conveyed by the roller also overflows at a high position. The reason for this is that the glass substrate is also brought into contact with the chemical polishing liquid in the relay portion, thereby preventing the surface of the glass substrate from being dried from being transported from the processing chamber to the next processing chamber, causing problems such as uneven chemical polishing.
又,較佳是,在處理腔室的前段更具備前處理槽,該前處理槽是構成為,使導入前述處理腔室前的玻璃基板的表面潤濕。其理由在於,當玻璃基板在乾燥的狀態下接觸到從化學研磨液產生的氣體(例如氫氟酸氣體),那麼於玻璃基板容易發生白濁化等問題,但藉由事先以水分等來潤濕玻璃基板表面,便不易發生這種問題。 Further, preferably, the front stage of the processing chamber further includes a pretreatment tank configured to wet the surface of the glass substrate before being introduced into the processing chamber. The reason for this is that when the glass substrate is in contact with the gas generated from the chemical polishing liquid (for example, hydrofluoric acid gas) in a dry state, the glass substrate is liable to become cloudy or the like, but is wetted by moisture or the like in advance. This problem is less likely to occur on the surface of the glass substrate.
此外,較佳是,複數個搬運輥係構成為,在處理腔室中,藉由一對搬運輥將玻璃基板從上下夾持而支撐。藉由這樣的構成,即使浸泡在溢流的化學研磨液之狀態下,玻璃基板的位置仍會穩定化。又,較佳是,複數個搬運輥係構成為,在處理腔室中,透過O型環而與玻璃基板接觸。藉由這樣的構成,搬運輥與玻璃基板之接觸面積會變得更小,故更不易發生化學研磨不均等問題。 Further, it is preferable that the plurality of conveyance rollers are configured to support the glass substrate from the upper and lower sides by a pair of conveyance rollers in the processing chamber. With such a configuration, the position of the glass substrate is stabilized even when immersed in the overflow chemical polishing liquid. Moreover, it is preferable that the plurality of conveyance rollers are configured to be in contact with the glass substrate through the O-ring in the processing chamber. With such a configuration, the contact area between the conveyance roller and the glass substrate becomes smaller, and thus the problem of uneven chemical polishing is less likely to occur.
按照上述之本發明,可不需使用治具而對玻璃基板施以化學研磨處理。 According to the invention as described above, the glass substrate can be chemically polished without using a jig.
10‧‧‧化學研磨裝置 10‧‧‧Chemical grinding device
12‧‧‧搬入部 12‧‧‧Moving Department
14‧‧‧前處理腔室 14‧‧‧Pre-treatment chamber
16‧‧‧第1處理腔室 16‧‧‧1st processing chamber
18‧‧‧第2處理腔室 18‧‧‧2nd processing chamber
20‧‧‧第3處理腔室 20‧‧‧3rd processing chamber
22‧‧‧第4處理腔室 22‧‧‧4th processing chamber
24‧‧‧水洗腔室 24‧‧‧Washing chamber
26‧‧‧搬出部 26‧‧‧ Moving out
28‧‧‧第1中繼部 28‧‧‧1st relay unit
30‧‧‧第2中繼部 30‧‧‧2nd relay
32‧‧‧第3中繼部 32‧‧‧3rd relay department
50‧‧‧搬運輥 50‧‧‧Transport roller
100‧‧‧玻璃基板 100‧‧‧ glass substrate
161‧‧‧處理槽 161‧‧‧Processing tank
162‧‧‧回收槽 162‧‧‧Recycling tank
163‧‧‧溫度調整部 163‧‧‧ Temperature Adjustment Department
164‧‧‧循環噴液管 164‧‧‧Circular spray tube
[圖1]本發明實施形態之單片式化學研磨裝置的外觀示意圖。 Fig. 1 is a schematic view showing the appearance of a one-piece chemical polishing apparatus according to an embodiment of the present invention.
[圖2]單片式化學研磨裝置的概略構成示意圖。 Fig. 2 is a schematic view showing the schematic configuration of a one-piece chemical polishing apparatus.
[圖3]第1處理腔室的概略構成示意圖。 Fig. 3 is a schematic view showing the configuration of a first processing chamber.
[圖4]中繼部的概略構成示意圖。 FIG. 4 is a schematic view showing a schematic configuration of a relay unit.
[圖5]對被搬運之玻璃基板進行化學研磨處理的狀態示意圖。 Fig. 5 is a view showing a state in which a glass substrate to be conveyed is subjected to a chemical polishing treatment.
[圖6]在前處理腔室進行前處理的狀態示意圖。 Fig. 6 is a schematic view showing a state in which pretreatment is performed in a pretreatment chamber.
[圖7]單片式化學研磨裝置的概略構成另一例示意圖。 Fig. 7 is a schematic view showing another example of a schematic configuration of a one-piece chemical polishing apparatus.
[圖8]單片式化學研磨裝置的概略構成又另一例示意圖。 Fig. 8 is a schematic view showing still another schematic configuration of a one-piece chemical polishing apparatus.
圖1為本發明實施形態一例之單片式的化學研磨裝置10的外觀示意圖。如圖1所示,化學研磨裝置10具備搬入部12、前處理腔室14、第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、第1中繼部28、第2中繼部30、第3中繼部32、水洗腔室 24、及搬出部26。在各腔室及各中繼部,設置有具耐酸性,且由透明構件所構成的窗40。 Fig. 1 is a schematic view showing the appearance of a one-piece chemical polishing apparatus 10 according to an embodiment of the present invention. As shown in FIG. 1 , the chemical polishing apparatus 10 includes a loading unit 12 , a pretreatment chamber 14 , a first processing chamber 16 , a second processing chamber 18 , a third processing chamber 20 , a fourth processing chamber 22 , and a 1 relay unit 28, second relay unit 30, third relay unit 32, water washing chamber 24, and the removal unit 26. A window 40 made of a transparent member is provided in each of the chambers and each of the relay portions.
搬入部12係構成為,可接收以作業員之手動作業或以機器人等之自動作業而搬入的欲薄型化處理之玻璃基板100。前處理腔室14係構成為,接收從搬入部12搬運而來的玻璃基板100。第1處理腔室16係構成為,使玻璃基板100與化學研磨液接觸,藉此蝕刻(本實施形態中為薄型化)玻璃基板100。第2處理腔室18、第3處理腔室20、及第4處理腔室22係構成為,分別與第1處理腔室16實質上具有同一構成,使與第1處理腔室16同一組成的化學研磨液接觸玻璃基板100,藉此蝕刻玻璃基板100。 The loading unit 12 is configured to receive a glass substrate 100 to be thinned by a manual operation by a worker or by an automatic operation such as a robot. The pretreatment chamber 14 is configured to receive the glass substrate 100 conveyed from the loading unit 12. The first processing chamber 16 is configured to etch the glass substrate 100 by bringing the glass substrate 100 into contact with the chemical polishing liquid to reduce the thickness (in the present embodiment). The second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 are configured to have substantially the same configuration as the first processing chamber 16, and have the same composition as the first processing chamber 16. The chemical polishing liquid contacts the glass substrate 100, thereby etching the glass substrate 100.
第1中繼部28、第2中繼部30、及第3中繼部32,係分別構成為連結複數個處理腔室。水洗腔室24係構成為,對經過第4處理腔室22的玻璃基板100水洗。搬出部26係構成為,可取出經化學研磨處理及水洗處理的玻璃基板100。到達搬出部26的玻璃基板100,係以作業員之手動作業或以機器人等之自動作業,而從化學研磨裝置10撤下並回收。其後,玻璃基板100若需要進一步薄型化的情形下,會再次被導入化學研磨裝置10,另一方面,若不需要進一步薄型化的情形下,會移轉至成膜工程等後續工程。各腔室及各中繼部係直接或間接地與排氣部34連接。排氣部34係構成為具備排氣管道及洗氣器等,而將化學研磨裝置10內部的氣體排出。 Each of the first relay unit 28, the second relay unit 30, and the third relay unit 32 is configured to connect a plurality of processing chambers. The water washing chamber 24 is configured to wash the glass substrate 100 that has passed through the fourth processing chamber 22. The carry-out unit 26 is configured to take out the glass substrate 100 subjected to the chemical polishing treatment and the water washing treatment. The glass substrate 100 that has reached the carry-out unit 26 is removed from the chemical polishing apparatus 10 and collected by manual operation by a worker or by an automatic operation such as a robot. Thereafter, when the glass substrate 100 needs to be further thinned, it is introduced into the chemical polishing apparatus 10 again. On the other hand, if it is not required to be further thinned, it is transferred to a subsequent process such as a film formation process. Each chamber and each relay portion are directly or indirectly connected to the exhaust portion 34. The exhaust unit 34 is configured to include an exhaust duct, a scrubber, and the like, and discharge the gas inside the chemical polishing apparatus 10.
上述化學研磨裝置10中,除了對前處理腔室14的導入口、及從水洗腔室24的導出口以外,前處理腔室14、第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、第1中繼部28、第2中繼部30、第3中繼部32、及水洗腔室24,全體係閉塞成為氣密且液密。導入口及導出口係呈比玻璃基板100的板厚稍高,且比玻璃基板100的寬度稍廣的狹縫形狀。 In the chemical polishing apparatus 10, the pretreatment chamber 14, the first processing chamber 16, and the second processing chamber 18, in addition to the inlet port of the pretreatment chamber 14 and the outlet port from the water washing chamber 24. The processing chamber 20, the fourth processing chamber 22, the first relay unit 28, the second relay unit 30, the third relay unit 32, and the water washing chamber 24 are all airtight and liquid-tight. The inlet and the outlet are slightly larger than the thickness of the glass substrate 100 and have a slit shape slightly larger than the width of the glass substrate 100.
此外,前處理腔室14、第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、及水洗腔室24係與排氣部34連通,各腔室的內部氣體會被吸引至排氣部34,故形成於化學研磨裝置10的開口會維持負壓狀態,處理氣體不會通過這些開口而漏出。 Further, the pretreatment chamber 14, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, and the water washing chamber 24 are in communication with the exhaust portion 34, each of which Since the internal gas of the chamber is attracted to the exhaust portion 34, the opening formed in the chemical polishing apparatus 10 maintains a negative pressure state, and the processing gas does not leak through the openings.
如圖2所示,第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、第1中繼部28、第2中繼部30、及第3中繼部32的處理液供給側,係透過處理液供給部44而與處理液容納部42連接。另一方面,第1處理腔室16、第2處理腔室18、第3處理腔室20、及第4處理腔室22的處理液排出側,係構成為與壓濾機(filter press)480連接,在壓濾機480過濾的處理液會被送回處理液容納部42。 As shown in FIG. 2, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, the fourth processing chamber 22, the first relay unit 28, the second relay unit 30, and the first The processing liquid supply side of the relay unit 32 is connected to the processing liquid storage unit 42 through the processing liquid supply unit 44. On the other hand, the processing liquid discharge sides of the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 are configured as a filter press 480. The treatment liquid filtered by the filter press 480 is returned to the treatment liquid storage portion 42.
此外,前處理腔室14及水洗腔室24,係構成為與水供給部46連接,從水供給部46接受純水供給。如圖2所示,化學研磨裝置10具備第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、第1 中繼部28、第2中繼部30、及排列成貫穿第3中繼部32的複數個搬運輥50。藉由這些複數個搬運輥50,構成用來搬運玻璃基板100之搬運路徑。此處,搬運速度較佳是設定在100~800mm/分,更佳是應設定在300~550mm/分。而在第1處理腔室16、第2處理腔室18、第3處理腔室20、及第4處理腔室22的處理時間,在本實施形態中是設定為合計20分左右,但並不限定於此。 Further, the pretreatment chamber 14 and the water washing chamber 24 are connected to the water supply unit 46, and receive pure water supply from the water supply unit 46. As shown in FIG. 2, the chemical polishing apparatus 10 includes a first processing chamber 16, a second processing chamber 18, a third processing chamber 20, a fourth processing chamber 22, and a first The relay unit 28, the second relay unit 30, and a plurality of transport rollers 50 that are arranged to penetrate the third relay unit 32. The plurality of conveyance rollers 50 constitute a conveyance path for conveying the glass substrate 100. Here, the conveying speed is preferably set to 100 to 800 mm/min, and more preferably set to 300 to 550 mm/min. In the present embodiment, the processing time in the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 is set to be approximately 20 minutes in total, but it is not Limited to this.
被化學研磨裝置10薄型化處理的玻璃基板100並無特別限定,但化學研磨裝置10係構成為,針對G8尺寸的四等分切割(1080×1230mm)及G6尺寸(1500×1800mm)等大型玻璃基板,也能將其上下兩面均勻地研磨。此外,化學研磨裝置10係構成為,不需使用治具或載具,而直接地藉由搬運輥50搬運玻璃基板100。 The glass substrate 100 that is thinned by the chemical polishing apparatus 10 is not particularly limited, but the chemical polishing apparatus 10 is configured to have a large glass such as a quarter-cut (1080×1230 mm) and a G6 size (1500×1800 mm) of a G8 size. The substrate can also be uniformly polished on both upper and lower sides. Further, the chemical polishing apparatus 10 is configured to directly transport the glass substrate 100 by the transport roller 50 without using a jig or a carrier.
由於第1處理腔室16、第2處理腔室18、第3處理腔室20、及第4處理腔室22實質上為同一構成,故以下僅針對第1處理腔室16進行說明,其餘處理腔室則省略說明。此外,由於第1中繼部28、第2中繼部30、及第3中繼部32實質上為同一構成,故以下僅針對第1中繼部28進行說明,其餘中繼部則省略說明。 Since the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22 have substantially the same configuration, only the first processing chamber 16 will be described below, and the rest of the processing will be described. The description of the chamber is omitted. In addition, since the first relay unit 28, the second relay unit 30, and the third relay unit 32 have substantially the same configuration, only the first relay unit 28 will be described below, and the rest of the relay unit will be omitted. .
如圖3所示,第1處理腔室16係具備處理槽161,其構成為,化學研磨液會在比被搬運輥50搬運之玻璃基板100還高的位置溢流。在處理槽161設有循環噴液管(shower pipe)164,其構成為,藉由從複數個噴出口 噴出化學研磨液,而使化學研磨液在槽內循環。循環噴液管164較佳是設置在玻璃基板100的搬運路徑的上下兩側。循環噴液管164係與泵浦442連接,處理槽161下部的化學研磨液可藉由泵浦442而常時供給至循環噴液管164。處理槽161的底部係透過泵浦484與壓濾機480連接,且透過閥488與廢液槽486連接。 As shown in FIG. 3, the first processing chamber 16 is provided with a processing tank 161 configured to overflow the chemical polishing liquid at a position higher than the glass substrate 100 conveyed by the conveying roller 50. A discharge pipe 164 is provided in the treatment tank 161, which is configured by a plurality of discharge ports The chemical slurry is sprayed and the chemical slurry is circulated in the tank. The circulation liquid discharge pipe 164 is preferably provided on the upper and lower sides of the conveyance path of the glass substrate 100. The circulation liquid discharge pipe 164 is connected to the pump 442, and the chemical polishing liquid in the lower portion of the treatment tank 161 can be constantly supplied to the circulation liquid discharge pipe 164 by the pump 442. The bottom of the treatment tank 161 is connected to the filter press 480 through a pump 484, and is connected to the waste tank 486 through a valve 488.
此外,處理槽161係透過構成處理液供給部44的泵浦44,而與貯液槽420連接。貯液槽420係透過泵浦425與氫氟酸槽424連接,且透過泵浦427與鹽酸槽426連接。此外,貯液槽420係與溫度調整部422連接,管理槽內的液體溫度使其成為所需溫度。本實施形態中,是藉由貯液槽420、溫度調整部422、氫氟酸槽424、鹽酸槽426、及泵浦425、427,來構成處理液容納部42,但處理液容納部42的構成並不限定於此。另,本實施形態中,處理液供給部44的化學研磨液係被管理在40~42℃左右,且化學研磨液的組成係被管理成氫氟酸1~20重量%、鹽酸0~10重量%、餘為水之液體組成,但液溫或液體組成並不限定於此。 Further, the processing tank 161 is connected to the liquid storage tank 420 through the pump 44 constituting the processing liquid supply unit 44. The reservoir 420 is connected to the hydrofluoric acid tank 424 through a pump 425 and is connected to the hydrochloric acid tank 426 through a pump 427. Further, the reservoir 420 is connected to the temperature adjustment unit 422, and manages the temperature of the liquid in the tank to a desired temperature. In the present embodiment, the liquid storage tank 420, the temperature adjustment unit 422, the hydrofluoric acid tank 424, the hydrochloric acid tank 426, and the pumps 425 and 427 constitute the treatment liquid storage unit 42, but the treatment liquid storage unit 42 The configuration is not limited to this. Further, in the present embodiment, the chemical polishing liquid of the processing liquid supply unit 44 is managed at about 40 to 42 ° C, and the composition of the chemical polishing liquid is managed to be 1 to 20% by weight of hydrofluoric acid and 0 to 10% by weight of hydrochloric acid. %, the remainder is a liquid composition of water, but the liquid temperature or liquid composition is not limited thereto.
在處理槽161下方配置有回收槽162。回收槽162係構成為會回收從處理槽161溢流的化學研磨液,故構成為從處理槽161滴落的化學研磨液會流進回收槽。回收槽162係構成為透過泵浦444與處理槽161連接,流入回收槽444的化學研磨液會回到處理槽161。回收槽162係與溫度調整部163連接,故回收槽162內的液溫會被管 理成所需溫度。在回收槽162,底部容易堆積淤渣(sludge),但此底部係透過泵浦484與壓濾機480連接,且透過閥488與廢液槽486連接。 A recovery tank 162 is disposed below the treatment tank 161. Since the recovery tank 162 is configured to collect the chemical polishing liquid overflowing from the treatment tank 161, the chemical polishing liquid dropped from the treatment tank 161 flows into the recovery tank. The recovery tank 162 is configured to be connected to the treatment tank 161 through the pump 444, and the chemical polishing liquid flowing into the recovery tank 444 is returned to the treatment tank 161. The recovery tank 162 is connected to the temperature adjustment unit 163, so that the liquid temperature in the recovery tank 162 is managed. The desired temperature is achieved. In the recovery tank 162, sludge is easily deposited at the bottom, but the bottom is connected to the filter press 480 through the pump 484, and is connected to the waste tank 486 through the valve 488.
閥488通常為關閉,故處理槽161及回收槽162的化學研磨液會藉由泵浦484而被送至壓濾機480。另一方面,當閥488開放,則處理槽161及回收槽162的化學研磨液會排出至廢液槽486。一般情況下,化學研磨液是在經過反應生成物沈澱等處理後,若為可再利用之狀態則會被送至壓濾機480,另一方面,若為無法再利用的狀態下,會被送至廢液槽486作為濃稠廢液。 The valve 488 is normally closed, so the chemical slurry of the treatment tank 161 and the recovery tank 162 is sent to the filter press 480 by the pump 484. On the other hand, when the valve 488 is opened, the chemical polishing liquid of the treatment tank 161 and the recovery tank 162 is discharged to the waste liquid tank 486. In general, the chemical polishing liquid is sent to the filter press 480 if it is recyclable after being treated by precipitation of the reaction product, etc., and if it is unrecyclable, it will be It is sent to the waste tank 486 as a thick waste liquid.
接著利用圖4,說明第1中繼部28。第1中繼部28係具備處理槽281,其構成為,化學研磨液會在比被搬運輥50搬運之玻璃基板100還高的位置溢流。處理槽281係透過泵浦440與貯液槽420連接。此外,處理槽281的底部係透過泵浦484與壓濾機480連接,且透過閥488與廢液槽486連接。 Next, the first relay unit 28 will be described with reference to Fig. 4 . The first relay unit 28 includes a processing tank 281 configured to overflow the chemical polishing liquid at a position higher than the glass substrate 100 transported by the transport roller 50. The treatment tank 281 is connected to the liquid storage tank 420 through the pump 440. Further, the bottom of the treatment tank 281 is connected to the filter press 480 through the pump 484, and is connected to the waste tank 486 through the valve 488.
閥488通常為關閉,故處理槽281的化學研磨液會藉由泵浦484而被送至壓濾機480。另一方面,當閥488開放,則處理槽281的化學研磨液會排出至廢液槽486。此外,從處理槽281溢流的化學研磨液係構成為,會流過第1中繼部28底部的斜面上,而流進位於兩側的處置腔室之回收槽。 Valve 488 is normally closed so that the chemical slurry of treatment tank 281 is sent to filter press 480 by pump 484. On the other hand, when the valve 488 is opened, the chemical slurry of the treatment tank 281 is discharged to the waste tank 486. Further, the chemical polishing liquid overflowing from the treatment tank 281 is configured to flow through the inclined surface of the bottom portion of the first relay portion 28, and flows into the recovery tanks of the treatment chambers located on both sides.
接著利用圖5(A)及圖5(B),說明第1處理腔室16中的化學研磨處理。如同圖所示,第1處理腔 室16中係構成為,藉由一對搬運輥50將玻璃基板100從上下夾持而支撐。本實施形態中,為了減低搬運輥50圓周面與玻璃基板100之接觸面積,係在搬運輥50圓周面安裝O型環502,使搬運輥50與玻璃基板100透過此O型環502而接觸。其結果,來自搬運輥50的搬運力會透過O型環502而傳遞給玻璃基板100。 Next, the chemical polishing treatment in the first processing chamber 16 will be described with reference to FIGS. 5(A) and 5(B). As shown in the figure, the first processing chamber In the chamber 16, the glass substrate 100 is supported by the pair of conveyance rollers 50 from above and below. In the present embodiment, in order to reduce the contact area between the circumferential surface of the conveyance roller 50 and the glass substrate 100, the O-ring 502 is attached to the circumferential surface of the conveyance roller 50, and the conveyance roller 50 and the glass substrate 100 are in contact with each other through the O-ring 502. As a result, the conveying force from the conveying roller 50 is transmitted to the glass substrate 100 through the O-ring 502.
玻璃基板100係被搬運輥50搬運,同時浸泡在從處理槽161溢流之化學研磨液中。因此,玻璃基板100會一面被搬運一面受到蝕刻而薄型化。此時,係從設置有循環噴液管164的複數個開口部,朝向玻璃基板100噴出化學研磨液。因此,會防止玻璃基板100的表面附近堆積淤渣,且會對玻璃基板100送出新鮮的化學研磨液。由於處理槽161內的化學研磨液係常時循環,故處理槽161內的化學研磨液不易發生不均勻化。另,上述構成中,搬運輥50、循環噴液管164、及O型環502之材質,較佳為具備耐酸性之樹脂,本實施形態中係使用聚氯乙烯(PVC)或聚四氟乙烯(PTFE)等。 The glass substrate 100 is conveyed by the conveyance roller 50, and is immersed in the chemical polishing liquid overflowed from the processing tank 161. Therefore, the glass substrate 100 is etched and thinned while being conveyed. At this time, the chemical polishing liquid is ejected toward the glass substrate 100 from a plurality of openings provided with the circulation liquid ejecting tube 164. Therefore, sludge is prevented from being deposited in the vicinity of the surface of the glass substrate 100, and a fresh chemical polishing liquid is sent to the glass substrate 100. Since the chemical polishing liquid in the treatment tank 161 is constantly circulated, the chemical polishing liquid in the treatment tank 161 is less likely to be uneven. Further, in the above configuration, the material of the conveyance roller 50, the circulation liquid discharge pipe 164, and the O-ring 502 is preferably an acid-resistant resin. In the present embodiment, polyvinyl chloride (PVC) or polytetrafluoroethylene is used. (PTFE), etc.
上述構成中,將比從處理槽161或處理槽281溢流之液量還多的化學研磨液,供給至處理槽161或處理槽281,藉此能夠使液面上昇;而使溢流之液量與供給量相等,則能使液面保持一定。雖未圖示,但較佳是在處理槽161或處理槽281設置液面感測器,且設置控制裝置,依據該液面感測器之輸出,控制使得處理液供給部44的各泵浦作動,以便液面能保持在規定範圍內。 In the above configuration, the chemical polishing liquid which is larger than the amount of liquid overflowing from the treatment tank 161 or the treatment tank 281 is supplied to the treatment tank 161 or the treatment tank 281, whereby the liquid level can be raised, and the overflow liquid can be made. If the amount is equal to the supply, the liquid level can be kept constant. Although not shown, it is preferable to provide a liquid level sensor in the processing tank 161 or the processing tank 281, and to provide a control means for controlling the respective pumps of the processing liquid supply portion 44 in accordance with the output of the liquid level sensor. Actuate so that the liquid level can be kept within the specified range.
不過,本實施形態中,刻意將藉由同一液體組成而執行同樣化學研磨的第1處理腔室16、第2處理腔室18、第3處理腔室20、及第4處理腔室22,彼此分割設置。其理由在於,抑制各處理槽161的大小,抑制循環噴液管164等配管之長度,藉此防止循環噴液管164的撓曲。此外,也為了減少循環噴液管164等配管之熱膨脹所造成的影響。藉由採取這樣的構成,可將循環噴液管164與玻璃基板100之距離維持均一,容易調整噴射至玻璃基板100的化學研磨液的液壓。另,循環噴液管164等配管之長度,雖亦與管徑(送液量)有關,但一般而言抑制在2.5m以下為佳,較佳是2m以下。 However, in the present embodiment, the first processing chamber 16, the second processing chamber 18, the third processing chamber 20, and the fourth processing chamber 22, which perform the same chemical polishing by the same liquid composition, are intentionally mutually Split settings. This is because the size of each of the treatment tanks 161 is suppressed, and the length of the piping such as the circulation liquid discharge pipe 164 is suppressed, thereby preventing the deflection of the circulation liquid discharge pipe 164. Further, in order to reduce the influence of thermal expansion of the piping such as the circulation liquid discharge pipe 164. By adopting such a configuration, the distance between the circulation liquid discharge tube 164 and the glass substrate 100 can be kept uniform, and the hydraulic pressure of the chemical polishing liquid sprayed onto the glass substrate 100 can be easily adjusted. Further, although the length of the piping such as the circulation liquid discharge pipe 164 is also related to the pipe diameter (liquid supply amount), it is generally preferably suppressed to 2.5 m or less, preferably 2 m or less.
接著利用圖6(A)~圖6(C),說明前處理腔室14之構成。前處理腔室14中,在對第1處理腔室16的玻璃基板100之導入口,配置有接收玻璃基板100的對向輥146、及對玻璃基板100的上下面噴射水的水洗噴嘴142,144。水洗噴嘴142,144是橫跨與玻璃基板100的搬運方向正交之方向(寬度方向)全域,以規定間隔配備有複數個。此處,接觸壓係被設定成,玻璃基板100會被對向輥146與搬運輥50柔和地保持住,而導入至第1處理腔室16。 Next, the configuration of the pretreatment chamber 14 will be described with reference to Figs. 6(A) to 6(C). In the pretreatment chamber 14, a counter roller 146 that receives the glass substrate 100 and a water washing nozzle 142 that ejects water to the upper and lower surfaces of the glass substrate 100 are disposed in the inlet port of the glass substrate 100 of the first processing chamber 16. 144. The water washing nozzles 142 and 144 are provided in a plurality of directions (width direction) across the direction perpendicular to the conveyance direction of the glass substrate 100, and are provided at a predetermined interval. Here, the contact pressure system is set such that the glass substrate 100 is gently held by the opposing roller 146 and the conveyance roller 50, and is introduced into the first processing chamber 16.
此外,水洗噴嘴142,144係被設定成,朝向玻璃基板100對第1處理腔室16的導入口噴射水。因此,被導入至第1處理腔室16的玻璃基板100,係為充分濡濕之狀態,防止不均勻之初始蝕刻。也就是說,由於 第1處理腔室16為氫氟酸氣體環境,故若玻璃基板100表面為乾燥狀態,則會有被氫氟酸氣體不均勻侵蝕的危險,但本實施形態中,玻璃基板100表面係被水保護,故其後在第1處理腔室16中會開始均勻的蝕刻。 Further, the water washing nozzles 142, 144 are set to spray water toward the glass substrate 100 to the inlet of the first processing chamber 16. Therefore, the glass substrate 100 introduced into the first processing chamber 16 is sufficiently wetted to prevent uneven initial etching. That is, because Since the first processing chamber 16 is in a hydrofluoric acid gas atmosphere, if the surface of the glass substrate 100 is in a dry state, there is a risk of uneven etching by the hydrofluoric acid gas. However, in the present embodiment, the surface of the glass substrate 100 is water. After the protection, uniform etching is started in the first processing chamber 16.
本實施形態中,如圖7(A)~圖7(C)所示,水洗噴嘴142係構成為朝正下方噴射水,另一方面,水洗噴嘴144係構成為朝上方且朝玻璃基板100的搬運路徑上游側斜向地噴射水。水洗噴嘴144構成為朝斜上方噴射水,其結果,當玻璃基板100接近水洗噴嘴142,144時,如圖7(A)及圖7(B)所示,可從水洗噴嘴144對玻璃基板100的上面供給水。因此,在玻璃基板100的上面,可迅速形成水膜,免於接觸氫氟酸氣體。另,當玻璃基板100接近水洗噴嘴144,從水洗噴嘴144噴射的水會打在玻璃基板100的底面,故可藉由水洗噴嘴144適當地洗淨玻璃基板100的底面,且適當地使其潤濕。 In the present embodiment, as shown in FIGS. 7(A) to 7(C), the water washing nozzle 142 is configured to spray water directly downward, and the water washing nozzle 144 is configured to face upward and toward the glass substrate 100. The upstream side of the conveying path sprays water obliquely. The water washing nozzle 144 is configured to spray water obliquely upward. As a result, when the glass substrate 100 approaches the water washing nozzles 142, 144, the glass substrate 100 can be washed from the water washing nozzle 144 as shown in FIGS. 7(A) and 7(B). The top of the water supply. Therefore, on the upper surface of the glass substrate 100, the water film can be quickly formed from contact with the hydrofluoric acid gas. Further, when the glass substrate 100 approaches the water washing nozzle 144, the water sprayed from the water washing nozzle 144 is hit on the bottom surface of the glass substrate 100, so that the bottom surface of the glass substrate 100 can be appropriately washed by the water washing nozzle 144, and appropriately moistened. wet.
如上所述,藉由在前處理腔室14設置水洗噴嘴142,144,會防止乾燥狀態的玻璃基板100曝露於氫氟酸氣體,而被不均勻地蝕刻。此外,由於防止了玻璃基板100在乾燥狀態下被對向輥146及搬運輥50夾持,故當通過對向輥146及搬運輥50之間時,會防止玻璃基板100產生損傷,或玻璃基板100污損。 As described above, by providing the water washing nozzles 142, 144 in the pretreatment chamber 14, the glass substrate 100 in the dry state is prevented from being exposed to the hydrofluoric acid gas, and is unevenly etched. Further, since the glass substrate 100 is prevented from being sandwiched between the facing roller 146 and the conveying roller 50 in a dry state, when the passing roller 146 and the conveying roller 50 are passed between each other, the glass substrate 100 is prevented from being damaged, or the glass substrate is damaged. 100 fouling.
玻璃基板100會依序通過第1處理腔室16、第2處理腔室18、第3處理腔室20、第4處理腔室22、第1中繼部28、第2中繼部30、及第3中繼部32,依序 受到化學研磨。而完成複數個階段的化學研磨之玻璃基板100,會藉由配置於第4處理腔室22出口的風刀244進行上面的液切處理後,再從配置於水洗腔室24的一群噴射管242接受洗淨水而被洗淨。洗淨用之噴射管242係為固定狀態,但亦可採用使其搖動之構成。 The glass substrate 100 sequentially passes through the first processing chamber 16 , the second processing chamber 18 , the third processing chamber 20 , the fourth processing chamber 22 , the first relay unit 28 , the second relay unit 30 , and Third relay unit 32, in order Subject to chemical grinding. The glass substrate 100 for chemical polishing in a plurality of stages is subjected to liquid cutting treatment by the air knife 244 disposed at the outlet of the fourth processing chamber 22, and then from a group of injection tubes 242 disposed in the water washing chamber 24. Washed with wash water. The spray pipe 242 for washing is in a fixed state, but it may be configured to be shaken.
無論如何,在洗淨處理的最終段,配置有上下一對風刀246,藉由該處噴射出的空氣,玻璃基板100的上下面會迅速被乾燥。接著,從水洗腔室24的導出口排出之玻璃基板100,會被在搬出部26待命的作業員取出,結束一連串的加工處理。像這樣,在上下一對風刀246的前段另行配置風刀244,藉此,可從玻璃基板100的上面迅速除去化學研磨液,故可有效防止玻璃基板100的上面被不均勻地蝕刻。 In any case, in the final stage of the washing process, a pair of upper and lower air knives 246 are disposed, and the upper and lower surfaces of the glass substrate 100 are quickly dried by the air ejected there. Then, the glass substrate 100 discharged from the outlet of the water washing chamber 24 is taken out by the worker who is on standby at the carry-out unit 26, and the series of processing is terminated. In this manner, the air knife 244 is separately disposed in the front stage of the pair of upper and lower air knives 246, whereby the chemical polishing liquid can be quickly removed from the upper surface of the glass substrate 100, so that the upper surface of the glass substrate 100 can be effectively prevented from being unevenly etched.
如上所述,按照本實施形態之化學研磨裝置10,在閉塞之空間中進行化學研磨,於裝置內產生的氫氟酸氣體等有毒氣體會藉由洗氣器等排氣機構而幾乎完全回收,故氫氟酸氣體幾乎不會擴散至化學單片裝置10周圍。其結果,化學研磨裝置10周圍的作業環境,相較於批次式化學研磨處理之情形會明顯的提升。是故,不必擔心使作業員的健康惡化,且亦不需要在保護裝備上花費成本。 As described above, according to the chemical polishing apparatus 10 of the present embodiment, chemical polishing is performed in the closed space, and toxic gas such as hydrofluoric acid gas generated in the apparatus is almost completely recovered by an exhaust mechanism such as a scrubber. Therefore, the hydrofluoric acid gas hardly diffuses around the chemical monolithic device 10. As a result, the working environment around the chemical polishing apparatus 10 is significantly improved as compared with the case of batch chemical polishing. Therefore, there is no need to worry about the health of the operator, and there is no need to cost the protective equipment.
此外,能夠防止化學研磨裝置10周圍的設備被氫氟酸氣體侵害,故亦可抑制設備的維護費用。也就是說,能夠以低價的維護費用,為作業員提供良好的作業環 境,可謂具有很大的優點。 Further, it is possible to prevent the equipment around the chemical polishing apparatus 10 from being invaded by the hydrofluoric acid gas, and it is also possible to suppress the maintenance cost of the equipment. In other words, it is possible to provide a good working cycle for the operator at a low maintenance cost. The situation can be said to have great advantages.
又,使用單片方式的化學研磨裝置10的情形下,相較於批次方式的研磨處理,具有可提升作業效率及製品品質之優點。再者,按照化學研磨裝置10,板厚精度會提升,故可預期切割(scribe)時良率穩定。此外,在切斷面平面強度方面,也能夠比批次方式的研磨處理來得強。又,不會有起泡所造成的氫氟酸損失,故可望有減少氫氟酸成本15%左右之效果。 Further, in the case of using the one-piece chemical polishing apparatus 10, it has an advantage of improving work efficiency and product quality as compared with the batch type polishing treatment. Further, according to the chemical polishing apparatus 10, the plate thickness accuracy is improved, so that the yield at the time of scribe is expected to be stable. In addition, it is also possible to be stronger than the batch type polishing process in terms of the strength of the cut surface plane. Moreover, there is no loss of hydrofluoric acid caused by foaming, so it is expected to reduce the cost of hydrofluoric acid by about 15%.
上述實施形態中,係說明了在第1中繼部28、第2中繼部30、及第3中繼部32亦構成為設置化學研磨液溢流之處理槽,但亦可如圖7所示般,採用具有將化學研磨液朝向玻璃基板100噴射之噴灑式機構的第1中繼部280、第2中繼部300、及第3中繼部320。藉由採用這樣的構成,玻璃基板100會依序被施以浸漬、噴灑、浸漬、噴灑,淤渣等便不易堆積。 In the above-described embodiment, the first relay unit 28, the second relay unit 30, and the third relay unit 32 are also configured to provide a processing tank for overflowing the chemical polishing liquid. As a general example, the first relay unit 280, the second relay unit 300, and the third relay unit 320 having a spray mechanism that ejects the chemical polishing liquid toward the glass substrate 100 are used. By adopting such a configuration, the glass substrate 100 is sequentially subjected to dipping, spraying, dipping, spraying, and sludge or the like is less likely to accumulate.
此外,亦可如圖8所示般,採用具有洗淨水溢流槽的水洗腔室240。藉由採用這樣的構成,可使洗淨水的消費量減少。 Further, as shown in Fig. 8, a water washing chamber 240 having a washing water overflow tank may be employed. By adopting such a configuration, the consumption of washing water can be reduced.
本實施形態中,係說明了藉由化學研磨裝置10來將玻璃基板100薄型化之例子,但亦可利用化學研磨裝置10來進行將玻璃基板100沿著區劃溝裁斷之處理。 In the present embodiment, an example in which the glass substrate 100 is thinned by the chemical polishing apparatus 10 has been described. However, the chemical polishing apparatus 10 may be used to perform the process of cutting the glass substrate 100 along the division groove.
上述實施形態之說明中,所有要點均為例示,不應認為其為限制之用。本發明之範圍並非由上述實 施形態,而是由申請專利範圍來揭示。又,本發明之範圍中,係意圖包含與申請專利範圍的意義及範圍內均等之所有變更。 In the description of the above embodiments, all the points are illustrative and should not be considered as limiting. The scope of the present invention is not limited by the above The form is applied, but is disclosed by the scope of the patent application. Further, all changes that come within the meaning and range of the claims are intended to be included within the scope of the invention.
12‧‧‧搬入部 12‧‧‧Moving Department
14‧‧‧前處理腔室 14‧‧‧Pre-treatment chamber
16‧‧‧第1處理腔室 16‧‧‧1st processing chamber
18‧‧‧第2處理腔室 18‧‧‧2nd processing chamber
20‧‧‧第3處理腔室 20‧‧‧3rd processing chamber
22‧‧‧第4處理腔室 22‧‧‧4th processing chamber
24‧‧‧水洗腔室 24‧‧‧Washing chamber
26‧‧‧搬出部 26‧‧‧ Moving out
28‧‧‧第1中繼部 28‧‧‧1st relay unit
30‧‧‧第2中繼部 30‧‧‧2nd relay
32‧‧‧第3中繼部 32‧‧‧3rd relay department
42‧‧‧處理液容納部 42‧‧‧Processing liquid storage
44‧‧‧處理液供給部 44‧‧‧Processing liquid supply department
46‧‧‧水供給部 46‧‧‧Water Supply Department
50‧‧‧搬運輥 50‧‧‧Transport roller
242‧‧‧噴射管 242‧‧‧Steam tube
244、246‧‧‧風刀 244, 246‧‧‧ wind knife
480‧‧‧壓濾機 480‧‧‧ filter press
Claims (4)
Applications Claiming Priority (1)
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JP2012128516A JP5340457B1 (en) | 2012-06-06 | 2012-06-06 | Chemical polishing equipment |
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TW201410381A TW201410381A (en) | 2014-03-16 |
TWI583648B true TWI583648B (en) | 2017-05-21 |
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TW102119914A TWI583648B (en) | 2012-06-06 | 2013-06-05 | Chemical grinding equipment |
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JP (1) | JP5340457B1 (en) |
KR (1) | KR102021958B1 (en) |
CN (1) | CN104379526B (en) |
TW (1) | TWI583648B (en) |
WO (1) | WO2013183504A1 (en) |
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JP6562208B2 (en) * | 2015-09-11 | 2019-08-21 | 日本電気硝子株式会社 | Glass plate manufacturing method and manufacturing apparatus thereof |
CN105439454B (en) * | 2015-12-02 | 2018-07-20 | 陈锋 | A method of so that glass thinning liquid is recycled |
CN110642523A (en) * | 2019-09-24 | 2020-01-03 | 江苏瑞泰玻璃制品有限公司 | Glass product frosting processing operation device |
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GB985366A (en) * | 1962-09-20 | 1965-03-10 | Pittsburgh Plate Glass Co | Method and apparatus for chemically treating glass ribbon or sheet for polishing |
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TW201221494A (en) * | 2010-11-18 | 2012-06-01 | Stanley Glass Co Ltd | Glass-etching device and method for etching glass |
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GB1019415A (en) * | 1963-01-23 | 1966-02-09 | Pittsburgh Plate Glass Co | Process for finishing float glass |
JPS483688U (en) * | 1971-05-29 | 1973-01-17 | ||
KR20020093578A (en) * | 2001-06-08 | 2002-12-16 | 수미도모 프리시젼 프로덕츠 캄파니 리미티드 | Substrate processing device |
JP4071220B2 (en) * | 2004-03-17 | 2008-04-02 | 西山ステンレスケミカル株式会社 | Manufacturing method of glass substrate |
JP3940426B2 (en) * | 2004-06-03 | 2007-07-04 | 株式会社テスコム | Flat panel display manufacturing method, flat panel display glass substrate outer surface polishing apparatus and flat panel display |
KR101387711B1 (en) | 2007-04-10 | 2014-04-23 | 에프엔에스테크 주식회사 | Glass substrate etching apparatus of flat panel display |
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2012
- 2012-06-06 JP JP2012128516A patent/JP5340457B1/en not_active Expired - Fee Related
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2013
- 2013-05-29 CN CN201380021332.1A patent/CN104379526B/en not_active Expired - Fee Related
- 2013-05-29 KR KR1020147030920A patent/KR102021958B1/en active IP Right Grant
- 2013-05-29 WO PCT/JP2013/064835 patent/WO2013183504A1/en active Application Filing
- 2013-06-05 TW TW102119914A patent/TWI583648B/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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GB985366A (en) * | 1962-09-20 | 1965-03-10 | Pittsburgh Plate Glass Co | Method and apparatus for chemically treating glass ribbon or sheet for polishing |
TW201033147A (en) * | 2009-03-05 | 2010-09-16 | Innovation Vacuum Technology Co Ltd | Processing method of glass etching |
TWM385550U (en) * | 2010-02-26 | 2010-08-01 | Manz Intech Machines Co Ltd | Roller device for a brush wheel set |
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TW201221494A (en) * | 2010-11-18 | 2012-06-01 | Stanley Glass Co Ltd | Glass-etching device and method for etching glass |
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WO2013183504A1 (en) | 2013-12-12 |
KR102021958B1 (en) | 2019-09-17 |
JP2013252984A (en) | 2013-12-19 |
CN104379526A (en) | 2015-02-25 |
JP5340457B1 (en) | 2013-11-13 |
TW201410381A (en) | 2014-03-16 |
CN104379526B (en) | 2016-12-28 |
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