TWI582125B - Method for manufacturing hardened anisotropic conductive material, connecting structure and connecting structure for electronic parts - Google Patents

Method for manufacturing hardened anisotropic conductive material, connecting structure and connecting structure for electronic parts Download PDF

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Publication number
TWI582125B
TWI582125B TW103101876A TW103101876A TWI582125B TW I582125 B TWI582125 B TW I582125B TW 103101876 A TW103101876 A TW 103101876A TW 103101876 A TW103101876 A TW 103101876A TW I582125 B TWI582125 B TW I582125B
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Taiwan
Prior art keywords
electrode
connection
compound
conductive
layer
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TW103101876A
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Chinese (zh)
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TW201446827A (en
Inventor
Hideaki Ishizawa
Takashi Kubota
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Sekisui Chemical Co Ltd
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Publication of TW201446827A publication Critical patent/TW201446827A/en
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Publication of TWI582125B publication Critical patent/TWI582125B/en

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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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Description

電子零件用硬化性各向異性導電材料、連接構造體及連接構造體之製造方法 Curing anisotropic conductive material for electronic parts, connection structure, and manufacturing method of connection structure

本發明係關於一種用於銅電極之連接之電子零件用硬化性組合物。又,本發明係關於一種使用上述電子零件用硬化性組合物之連接構造體及連接構造體之製造方法。 The present invention relates to a curable composition for electronic parts for connection of copper electrodes. Moreover, the present invention relates to a connection structure using the above-described curable composition for electronic parts and a method of manufacturing the connection structure.

熱硬化性樹脂組合物可廣泛用於電子、建築及車輛等各種用途。又,有時為了將各種連接對象構件之電極間電性連接,而將導電性粒子調配於上述熱硬化性樹脂組合物。包含導電性粒子之熱硬化性樹脂組合物被稱為各向異性導電材料。 The thermosetting resin composition can be widely used in various applications such as electronics, construction, and vehicles. Moreover, in order to electrically connect the electrodes of the various connection target members, the conductive particles may be blended in the thermosetting resin composition. The thermosetting resin composition containing conductive particles is referred to as an anisotropic conductive material.

上述各向異性導電材料係用於IC晶片與軟性印刷電路基板之連接、及IC晶片與具有ITO電極之電路基板之連接等。例如,於IC晶片之電極與電路基板之電極之間配置各向異性導電材料後進行加熱及加壓,藉此可利用導電性粒子將該等電極電性連接。 The anisotropic conductive material is used for connection between an IC chip and a flexible printed circuit board, and connection of an IC chip to a circuit board having an ITO electrode. For example, an anisotropic conductive material is disposed between the electrode of the IC chip and the electrode of the circuit board, and then heated and pressurized, whereby the electrodes can be electrically connected by conductive particles.

作為上述熱硬化性樹脂組合物之一例,於下述專利文獻1中揭示有包含(a)環氧樹脂與(b)硬化促進劑之組合物。於專利文獻1之實施例中,使用有咪唑類作為上述(b)硬化促進劑。於專利文獻1中提出使用上述組合物作為半導體密封用膜狀接著劑。 As an example of the above-mentioned thermosetting resin composition, the following Patent Document 1 discloses a composition comprising (a) an epoxy resin and (b) a curing accelerator. In the examples of Patent Document 1, an imidazole is used as the above (b) hardening accelerator. Patent Document 1 proposes to use the above composition as a film-like adhesive for semiconductor sealing.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2009-256588號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-256588

近年來,為了將電子零件之電極間等有效率地進行連接,而要求縮短組合物之硬化所需要之加熱時間。藉由縮短加熱時間,可抑制獲得之電子零件之熱劣化。 In recent years, in order to efficiently connect electrodes between electronic components and the like, it is required to shorten the heating time required for curing of the composition. By shortening the heating time, thermal deterioration of the obtained electronic component can be suppressed.

專利文獻1中記載有可製造如下半導體裝置,即於半導體裝置中將組合物用於密封之情形時作業性優異,即便於加熱至300℃以上之情形時亦可充分抑制空隙之產生,並且連接可靠性與絕緣可靠性足夠優異。然而,如專利文獻1所記載之先前之硬化性組合物,其存在並不充分地快速熱硬化之情況。又,銅電極之表面通常經耐熱預助焊劑處理。於為了將此種銅電極電性連接而使用先前之硬化性組合物之情形時,有導通性變低之情況。 Patent Document 1 discloses that a semiconductor device can be manufactured, that is, when the composition is used for sealing in a semiconductor device, workability is excellent, and even when heated to 300° C. or higher, generation of voids can be sufficiently suppressed, and connection can be made. Reliability and insulation reliability are excellent enough. However, the prior curable composition described in Patent Document 1 does not sufficiently rapidly thermally harden. Also, the surface of the copper electrode is usually treated with a heat resistant preflux. In the case where the prior curable composition is used to electrically connect such a copper electrode, the conductivity may be lowered.

本發明之目的在於提供一種可快速地硬化、進而即便於將銅電極連接之情形時亦可提高導通性之電子零件用硬化性組合物,以及使用該電子零件用硬化性組合物之連接構造體及連接構造體之製造方法。 An object of the present invention is to provide a curable composition for an electronic component which can be quickly cured and which can improve conductivity even when a copper electrode is connected, and a connection structure using the curable composition for an electronic component. And a method of manufacturing the connected structure.

根據本發明之較廣態樣,提供一種電子零件用硬化性組合物,其係用於銅電極之連接者,且包含:熱硬化性化合物、潛伏性硬化劑、及具有芳香族骨架之咪唑化合物。 According to a broader aspect of the present invention, there is provided a curable composition for an electronic component, which is used for a connector of a copper electrode, and comprises: a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton .

於本發明之電子零件用硬化性組合物之一特定態樣中,上述潛伏性硬化劑為微膠囊型咪唑硬化劑。 In a specific aspect of the curable composition for electronic parts of the present invention, the latent curing agent is a microcapsule-type imidazole curing agent.

於本發明之電子零件用硬化性組合物之一特定態樣中,該電子零件用硬化性組合物包含導電性粒子。 In a specific aspect of the curable composition for electronic parts of the present invention, the curable composition for electronic parts contains conductive particles.

於本發明之電子零件用硬化性組合物之一特定態樣中,上述導電性粒子係導電性之外側之表面為焊料之導電性粒子。 In a specific aspect of the curable composition for electronic parts of the present invention, the conductive particles are electrically conductive particles on the outer side of the conductive side.

於本發明之電子零件用硬化性組合物之一特定態樣中,上述硬 化性組合物為膏。 In a specific aspect of the curable composition for electronic parts of the present invention, the above hard The composition is a paste.

根據本發明之較廣態樣,提供一種連接構造體,其具備:表面具有第1電極之第1連接對象構件、表面具有第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部係藉由使上述之電子零件用硬化性組合物硬化而形成,上述第1電極及上述第2電極中之至少一者為銅電極,且上述第1電極與上述第2電極被電性連接。 According to a general aspect of the present invention, a connection structure including: a first connection target member having a first electrode on a surface thereof, a second connection target member having a second electrode on its surface, and the first connection target member; a connection portion connected to the second connection target member, wherein the connection portion is formed by curing the curable composition for an electronic component, and at least one of the first electrode and the second electrode is a copper electrode And the first electrode and the second electrode are electrically connected.

於本發明之連接構造體之一特定態樣中,上述電子零件用硬化性組合物包含導電性粒子,且上述第1電極與上述第2電極由上述導電性粒子電性連接。 In a specific aspect of the connection structure of the present invention, the curable composition for an electronic component includes conductive particles, and the first electrode and the second electrode are electrically connected to each other by the conductive particles.

根據本發明之較廣態樣,提供一種連接構造體之製造方法,其具備:於表面具有第1電極之第1連接對象構件、與表面具有第2電極之第2連接對象構件之間配置上述之電子零件用硬化性組合物之步驟;及藉由使上述電子零件用硬化性組合物硬化而形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,從而獲得將上述第1電極與上述第2電極電性連接之連接構造體的步驟,且上述第1電極及上述第2電極中之至少一者為銅電極。 According to a general aspect of the present invention, there is provided a method of manufacturing a connection structure, comprising: arranging the first connection member having a first electrode on a surface thereof and the second connection member having a second electrode on a surface thereof; And the step of forming the connection portion connecting the first connection member and the second connection member by curing the curable composition for the electronic component; A step of connecting the electrode to the second electrode and connecting the structure to the second electrode, and at least one of the first electrode and the second electrode is a copper electrode.

於本發明之連接構造體之製造方法之一特定態樣中,上述電子零件用硬化性組合物包含導電性粒子,且獲得上述第1電極與上述第2電極由上述導電性粒子電性連接而成的連接構造體。 In a specific aspect of the method for producing a connection structure according to the present invention, the curable composition for an electronic component includes conductive particles, and the first electrode and the second electrode are electrically connected to each other by the conductive particles. a connected structure.

本發明之電子零件用硬化性組合物包含熱硬化性化合物、潛伏性硬化劑、及具有芳香族骨架之咪唑化合物,因此可快速地硬化。進而,使用本發明之電子零件用硬化性組合物將銅電極連接之情形時,可提高導通性。 The curable composition for electronic parts of the present invention contains a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton, so that it can be rapidly cured. Further, when the copper electrode is connected by using the curable composition for electronic parts of the present invention, the conductivity can be improved.

1、11‧‧‧連接構造體 1, 11‧‧‧ connection structure

2、12‧‧‧第1連接對象構件 2, 12‧‧‧1st connection object component

2a、12a‧‧‧第1電極 2a, 12a‧‧‧1st electrode

3、13‧‧‧連接部 3, 13‧‧‧ Connection Department

4、14‧‧‧第2連接對象構件 4, 14‧‧‧2nd connection object component

4a、14a‧‧‧第2電極 4a, 14a‧‧‧2nd electrode

5‧‧‧導電性粒子 5‧‧‧Electrical particles

21‧‧‧導電性粒子 21‧‧‧Electrical particles

21a‧‧‧表面 21a‧‧‧Surface

22‧‧‧樹脂粒子 22‧‧‧ resin particles

22a‧‧‧表面 22a‧‧‧ surface

23‧‧‧導電層 23‧‧‧ Conductive layer

24‧‧‧第1導電層 24‧‧‧1st conductive layer

24a‧‧‧表面 24a‧‧‧ surface

25‧‧‧焊料層 25‧‧‧ solder layer

25a‧‧‧熔融之焊料層部分 25a‧‧‧Solder solder layer

31‧‧‧導電性粒子 31‧‧‧Electrical particles

32‧‧‧焊料層 32‧‧‧ solder layer

41‧‧‧焊料粒子 41‧‧‧ solder particles

圖1係模式性地表示使用本發明之一實施形態之電子零件用硬化性組合物之連接構造體的剖面圖。 Fig. 1 is a cross-sectional view schematically showing a connection structure in which a curable composition for an electronic component according to an embodiment of the present invention is used.

圖2係模式性地表示圖1所示之連接構造體之變化例之剖面圖。 Fig. 2 is a cross-sectional view schematically showing a modification of the connection structure shown in Fig. 1.

圖3係模式性地表示可用於本發明之一實施形態之電子零件用硬化性組合物之導電性粒子的剖面圖。 Fig. 3 is a cross-sectional view schematically showing conductive particles which can be used in the curable composition for electronic parts according to an embodiment of the present invention.

圖4係表示導電性粒子之變化例之剖面圖。 Fig. 4 is a cross-sectional view showing a variation of the conductive particles.

圖5係表示導電性粒子之另一變化例之剖面圖。 Fig. 5 is a cross-sectional view showing another modification of the conductive particles.

以下,對本發明之詳細內容進行說明。 Hereinafter, the details of the present invention will be described.

(電子零件用硬化性組合物) (curable composition for electronic parts)

本發明之電子零件用硬化性組合物(以下,有時簡稱為硬化性組合物)包含:熱硬化性化合物、潛伏性硬化劑、及具有芳香族骨架之咪唑化合物。上述硬化性組合物可用於銅電極之連接。上述硬化性組合物可用於電子零件。上述硬化性組合物可較佳地用於電子零件之連接。上述硬化性組合物較佳為電子零件用連接材料。上述硬化性組合物較佳為電子零件用電路連接材料。 The curable composition for electronic parts of the present invention (hereinafter sometimes referred to simply as a curable composition) includes a thermosetting compound, a latent curing agent, and an imidazole compound having an aromatic skeleton. The above curable composition can be used for the connection of copper electrodes. The above curable composition can be used for electronic parts. The above curable composition can be preferably used for the connection of electronic parts. The curable composition is preferably a connecting material for electronic parts. The curable composition is preferably a circuit connecting material for electronic parts.

本發明之電子零件用硬化性組合物具有上述之組成,因此可快速地硬化。進而,本發明之電子零件用硬化性組合物具有上述之組成,因此於將銅電極連接之情形時,可提高導通性。 Since the curable composition for electronic parts of the present invention has the above-described composition, it can be hardened quickly. Further, since the curable composition for electronic parts of the present invention has the above-described composition, when the copper electrodes are connected, the conductivity can be improved.

又,銅電極之表面通常經耐熱預助焊劑處理。於本發明中,即便將此種經耐熱預助焊劑處理之銅電極進行連接,亦可提高導通性。上述具有芳香族骨架之咪唑化合物大大有助於提高銅電極之導通性。另一方面,於僅使用具有芳香族骨架之咪唑化合物且未使用潛伏性硬化劑之情形時,無法使上述熱硬化性化合物充分硬化,或組合物之保存穩定性變低,或組合物之硬化速度變慢。於本發明中,主要藉由上述潛伏性硬化劑而使上述熱硬化性化合物快速硬化,且主要藉由上述 具有芳香族骨架之咪唑化合物而提高銅電極之導通性。因此,於本發明中,就銅電極之連接而言,組合潛伏性硬化劑與具有芳香族骨架之咪唑化合物具有較大意義。 Also, the surface of the copper electrode is usually treated with a heat resistant preflux. In the present invention, even if such a copper electrode treated with a heat-resistant preflux is connected, the conductivity can be improved. The above-described imidazole compound having an aromatic skeleton greatly contributes to the improvement of the conductivity of the copper electrode. On the other hand, when only an imidazole compound having an aromatic skeleton is used and a latent curing agent is not used, the above thermosetting compound cannot be sufficiently cured, or the storage stability of the composition is lowered, or the composition is hardened. The speed is slower. In the present invention, the thermosetting compound is rapidly hardened mainly by the latent curing agent, and mainly by the above The imidazole compound having an aromatic skeleton improves the conductivity of the copper electrode. Therefore, in the present invention, in connection with the connection of the copper electrodes, the combination of the latent curing agent and the imidazole compound having an aromatic skeleton has a large meaning.

進而,於本發明中,可提高硬化物之耐濕熱性。又,亦可提高硬化物之耐熱衝擊性。 Further, in the present invention, the heat and humidity resistance of the cured product can be improved. Moreover, the thermal shock resistance of the cured product can also be improved.

以下,對本發明之電子零件用硬化性組合物所含有之各成分之詳細內容進行說明。 Hereinafter, the details of each component contained in the curable composition for electronic parts of the present invention will be described.

[熱硬化性化合物] [thermosetting compound]

作為上述熱硬化性化合物,可列舉:氧雜環丁烷化合物、環氧化合物、環硫化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。上述熱硬化性化合物可僅使用1種,亦可併用2種以上。 Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth)acrylic compound, a phenol compound, an amine compound, an unsaturated polyester compound, and a polyamine group. An acid ester compound, a polyoxymethylene compound, a polyimine compound, or the like. The thermosetting compound may be used alone or in combination of two or more.

環氧化合物具有硬化物之接著力較高、且硬化物之耐水性及耐熱性亦優異之性質。因此,上述熱硬化性化合物較佳為環氧化合物。 The epoxy compound has a property that the adhesion of the cured product is high and the water resistance and heat resistance of the cured product are also excellent. Therefore, the above thermosetting compound is preferably an epoxy compound.

作為上述環氧化合物,可列舉:雙酚型環氧化合物、酚系酚醛清漆型環氧化合物、聯苯酚醛清漆型環氧化合物、聯苯酚型環氧化合物、間苯二酚型環氧化合物、萘型環氧化合物、茀型環氧化合物、苯酚芳烷基型環氧化合物、萘酚芳烷基型環氧化合物、二環戊二烯型環氧化合物、蒽型環氧化合物、具有金剛烷骨架之環氧化合物、具有三環癸烷骨架之環氧化合物、及於骨架具有三核之環氧化合物等。作為上述雙酚型環氧化合物,可列舉:雙酚A型環氧化合物、雙酚F型環氧化合物及雙酚S型環氧化合物等。 Examples of the epoxy compound include a bisphenol epoxy compound, a phenol novolak epoxy compound, a biphenol novolak epoxy compound, a biphenol epoxy compound, and a resorcinol epoxy compound. Naphthalene type epoxy compound, fluorene type epoxy compound, phenol aralkyl type epoxy compound, naphthol aralkyl type epoxy compound, dicyclopentadiene type epoxy compound, oxime type epoxy compound, with adamantane An epoxy compound of a skeleton, an epoxy compound having a tricyclodecane skeleton, and a skeleton having three Nuclear epoxy compounds, etc. Examples of the bisphenol type epoxy compound include a bisphenol A type epoxy compound, a bisphenol F type epoxy compound, and a bisphenol S type epoxy compound.

上述環氧化合物亦可具有環氧基及自由基聚合性基。上述自由基聚合性基意指可藉由自由基進行加成聚合之基。作為上述自由基聚合性基,可列舉包含不飽和雙鍵之基等。作為上述自由基聚合性基之 具體例,可列舉:烯丙基、異丙烯基、順丁烯二醯基、苯乙烯基、乙烯基苄基、(甲基)丙烯醯基及乙烯基等。再者,所謂(甲基)丙烯醯基意指丙烯醯基與甲基丙烯醯基。 The epoxy compound may have an epoxy group and a radical polymerizable group. The above radical polymerizable group means a group which can be subjected to addition polymerization by a radical. The radical polymerizable group may, for example, be a group containing an unsaturated double bond. As the above radical polymerizable group Specific examples thereof include an allyl group, an isopropenyl group, a maleic acid group, a styryl group, a vinylbenzyl group, a (meth)acryl fluorenyl group, and a vinyl group. Further, the (meth)acryl fluorenyl group means an acryl fluorenyl group and a methacryl fluorenyl group.

就進一步提高組合物之快速硬化性及硬化物之耐濕熱性之觀點而言,上述自由基聚合性基較佳為具有乙烯基,更佳為(甲基)丙烯醯基。於上述自由基聚合性基為(甲基)丙烯醯基之情形時,上述自由基聚合性基具有乙烯基。 The radical polymerizable group preferably has a vinyl group, more preferably a (meth) acrylonitrile group, from the viewpoint of further improving the rapid hardenability of the composition and the moist heat resistance of the cured product. In the case where the radical polymerizable group is a (meth) acrylonitrile group, the radical polymerizable group has a vinyl group.

就進一步提高組合物之快速硬化性之觀點而言,上述環氧化合物較佳為於兩末端具有環氧基。就進一步提高硬化物之耐濕熱性之觀點而言,上述環氧化合物較佳為於支鏈具有乙烯基,較佳為具有(甲基)丙烯醯基,較佳為於支鏈具有(甲基)丙烯醯基。 The epoxy compound preferably has an epoxy group at both terminals from the viewpoint of further improving the rapid hardenability of the composition. The epoxy compound preferably has a vinyl group in a branched chain, preferably has a (meth)acryl fluorenyl group, and preferably has a (methyl) propylene group in view of further improving the heat and humidity resistance of the cured product. ) acrylonitrile.

就進一步提高組合物之快速硬化性及硬化物之耐濕熱性之觀點而言,上述環氧化合物之重量平均分子量較佳為500以上,更佳為1000以上,且較佳為150000以下,更佳為50000以下,進而較佳為15000以下。 The weight average molecular weight of the epoxy compound is preferably 500 or more, more preferably 1,000 or more, and preferably 150,000 or less, more preferably from the viewpoint of further improving the rapid hardenability of the composition and the moist heat resistance of the cured product. It is 50,000 or less, and more preferably 15,000 or less.

上述環氧化合物之重量平均分子量係表示藉由凝膠滲透層析法(GPC)而測定之以聚苯乙烯換算計之重量平均分子量。 The weight average molecular weight of the above epoxy compound means a weight average molecular weight measured by gel permeation chromatography (GPC) in terms of polystyrene.

上述環氧化合物更佳為使用二醇化合物與具有2個環氧基之化合物的反應物。上述環氧化合物較佳為藉由使具有乙烯基之化合物或具有環氧基之化合物與二醇化合物和具有2個環氧基之化合物的反應物進行反應而獲得。 The above epoxy compound is more preferably a reactant using a diol compound and a compound having two epoxy groups. The above epoxy compound is preferably obtained by reacting a compound having a vinyl group or a compound having an epoxy group with a reactant of a diol compound and a compound having two epoxy groups.

上述環氧化合物較佳為於支鏈具有1個以上乙烯基,更佳為於支鏈具有合計2個以上之乙烯基。乙烯基之數量越多,越可進一步縮短加熱時間,進而可進一步提高硬化物之接著性及耐濕熱性。 The epoxy compound preferably has one or more vinyl groups in a branched chain, and more preferably has a total of two or more vinyl groups in a branched chain. The larger the amount of the vinyl group, the further the heating time can be shortened, and the adhesion of the cured product and the moist heat resistance can be further improved.

上述環氧化合物較佳為具有2個以上酚性羥基之化合物、與具有2個以上環氧基之化合物的反應物。 The epoxy compound is preferably a reaction product of a compound having two or more phenolic hydroxyl groups and a compound having two or more epoxy groups.

作為上述具有2個以上酚性羥基之化合物,可列舉:雙酚化合物、間苯二酚及萘酚等。作為上述雙酚化合物,可列舉:雙酚F、雙酚A、雙酚S、雙酚SA及雙酚E等。 Examples of the compound having two or more phenolic hydroxyl groups include a bisphenol compound, resorcin, and naphthol. Examples of the bisphenol compound include bisphenol F, bisphenol A, bisphenol S, bisphenol SA, and bisphenol E.

作為上述具有2個以上環氧基之環氧化合物,可列舉脂肪族環氧化合物及芳香族環氧化合物等。作為上述脂肪族環氧化合物,可列舉:於碳數3~12之烷基鏈之兩末端具有縮水甘油醚基之化合物、以及具有下述結構單元之聚醚型環氧化合物,該結構單元係具有碳數2~4之聚醚骨架,且2~10個該聚醚骨架連續鍵結。 Examples of the epoxy compound having two or more epoxy groups include an aliphatic epoxy compound and an aromatic epoxy compound. Examples of the aliphatic epoxy compound include a compound having a glycidyl ether group at both terminal ends of an alkyl chain having 3 to 12 carbon atoms, and a polyether epoxy compound having the following structural unit. It has a polyether skeleton having a carbon number of 2 to 4, and 2 to 10 of the polyether skeletons are continuously bonded.

上述環氧化合物較佳為藉由使具有自由基聚合性基之化合物與雙酚F或間苯二酚與1,6-己二醇二縮水甘油醚或間苯二酚二縮水甘油醚之反應物(以下,有時記載為反應物X)進行反應而獲得。於該反應中,以自由基聚合性基殘留之方式進行反應。使用此種化合物而合成之環氧化合物可進一步快速地硬化,進而可使硬化物之接著性及耐濕熱性進一步提高。上述具有自由基聚合性基之化合物較佳為(甲基)丙烯酸或異氰酸(甲基)丙烯醯氧基乙酯。 The above epoxy compound is preferably reacted with a compound having a radical polymerizable group and bisphenol F or resorcin with 1,6-hexanediol diglycidyl ether or resorcinol diglycidyl ether. The product (hereinafter sometimes referred to as the reactant X) is obtained by a reaction. In this reaction, the reaction is carried out in such a manner that the radical polymerizable group remains. The epoxy compound synthesized by using such a compound can be further hardened more quickly, and the adhesion of the cured product and the heat and humidity resistance can be further improved. The compound having a radical polymerizable group is preferably (meth)acrylic acid or (meth)acryloxyethyloxyethyl isocyanate.

作為上述反應物X,可列舉:雙酚F與1,6-己二醇二縮水甘油醚之第1反應物、間苯二酚與1,6-己二醇二縮水甘油醚之第2反應物、間苯二酚與間苯二酚二縮水甘油醚之第3反應物、及雙酚F與間苯二酚二縮水甘油醚之第4反應物。 Examples of the reactant X include a first reaction product of bisphenol F and 1,6-hexanediol diglycidyl ether, and a second reaction of resorcin and 1,6-hexanediol diglycidyl ether. a third reactant of resorcinol and resorcinol diglycidyl ether, and a fourth reactant of bisphenol F and resorcinol diglycidyl ether.

上述第1反應物係於主鏈具有源自雙酚F之骨架與源自1,6-己二醇二縮水甘油醚之骨架所鍵結而成之結構單元,且於兩末端具有源自1,6-己二醇二縮水甘油醚之環氧基。上述第2反應物係於主鏈具有源自間苯二酚之結構單元與源自1,6-己二醇二縮水甘油醚之結構單元,且於兩末端具有源自1,6-己二醇二縮水甘油醚之環氧基。上述第3反應物係於主鏈具有源自間苯二酚之骨架與源自間苯二酚二縮水甘油醚之骨架,且於兩末端具有源自間苯二酚二縮水甘油醚之環氧基。上述 第4反應物係於主鏈具有源自雙酚F之骨架與源自間苯二酚二縮水甘油醚之骨架,且於兩末端具有源自間苯二酚二縮水甘油醚之環氧基。 The first reactant is a structural unit in which a skeleton derived from bisphenol F and a skeleton derived from 1,6-hexanediol diglycidyl ether are bonded in a main chain, and has a structure derived from both ends. , epoxy group of 6-hexanediol diglycidyl ether. The second reactant is a structural unit derived from resorcin and a structural unit derived from 1,6-hexanediol diglycidyl ether in the main chain, and has a 1,6-hexane derived from both ends. An epoxy group of an alcohol diglycidyl ether. The third reactant is a main chain having a skeleton derived from resorcin and a skeleton derived from resorcinol diglycidyl ether, and having an epoxy derived from resorcinol diglycidyl ether at both ends. base. Above The fourth reactant is a skeleton having a skeleton derived from bisphenol F and a skeleton derived from resorcinol diglycidyl ether in the main chain, and having an epoxy group derived from resorcinol diglycidyl ether at both ends.

就容易合成、可使環氧化合物進一步快速地硬化、進而使硬化物之接著性及耐濕性進一步提高之觀點而言,上述第1、第2、第3、第4反應物中,較佳為上述第1反應物、上述第2反應物或上述第3反應物。上述反應物X較佳為上述第1反應物,亦較佳為上述第2反應物,進而亦較佳為上述第3反應物。 In the first, second, third, and fourth reactants, it is preferred that the epoxy compound is further rapidly hardened and the cured material and the moisture resistance are further improved. It is the first reactant, the second reactant or the third reactant. The reactant X is preferably the first reactant, preferably the second reactant, and more preferably the third reactant.

[潛伏性硬化劑] [latent hardener]

作為上述潛伏性硬化劑,可列舉:潛伏性咪唑硬化劑、潛伏性胺硬化劑、潛伏性酚硬化劑、三氟化硼-胺錯合物及有機酸醯肼等。上述潛伏性硬化劑可具有芳香族骨架,亦可不具有芳香族骨架。上述潛伏性硬化劑可僅使用1種,亦可併用2種以上。 Examples of the latent curing agent include a latent imidazole curing agent, a latent amine curing agent, a latent phenol curing agent, a boron trifluoride-amine complex, and an organic acid hydrazine. The latent curing agent may have an aromatic skeleton or may not have an aromatic skeleton. The latent curing agent may be used alone or in combination of two or more.

作為上述潛伏性咪唑硬化劑之市售品,可列舉:日本曹達公司製造之包藏咪唑化合物「TEP-2MZ」、「TEP-2E4MZ」及「TEP-1B2MZ」、以及四國化成工業公司製造之「CUREDUCT P-0505」等。 As a commercially available product of the above-mentioned latent imidazole curing agent, the inclusion of imidazole compounds "TEP-2MZ", "TEP-2E4MZ" and "TEP-1B2MZ" manufactured by Japan's Soda Corporation, and "Wuzhou Chemical Industry Co., Ltd." are mentioned. CUREDUCT P-0505" and so on.

作為上述潛伏性胺硬化劑,可列舉:雙氰胺、改性胺化合物及胺加成物化合物等。 Examples of the latent amine curing agent include dicyandiamide, a modified amine compound, and an amine adduct compound.

作為上述改性胺化合物之市售品,可列舉:T & K TOKA公司製造之「Fujicure FXR-1020」、「Fujicure FXR-1030」及「Fujicure FXR-1081」等。作為上述胺加成物化合物,可列舉:Ajinomoto Fine-Tech公司製造之「Amicure PN-23」、「Amicure PN-H」、「Amicure PN-31」、「Amicure PN-40」、「Amicure PN-50」、「Amicure PN-F」、「Amicure PN-23J」、「Amicure PN-31J」、「Amicure PN-40J」、「Amicure PN-40」、「Amicure MY-24」、「Amicure MY-H」及「Amicure 25」等。 As a commercial item of the above-mentioned modified amine compound, "Fujicure FXR-1020", "Fujicure FXR-1030", and "Fujicure FXR-1081" manufactured by T & K TOKA Co., Ltd., etc. are mentioned. As the above-mentioned amine adduct compound, "Amicure PN-23", "Amicure PN-H", "Amicure PN-31", "Amicure PN-40", "Amicure PN-" manufactured by Ajinomoto Fine-Tech Co., Ltd. 50", "Amicure PN-F", "Amicure PN-23J", "Amicure PN-31J", "Amicure PN-40J", "Amicure PN-40", "Amicure MY-24", "Amicure MY-H" And "Amicure 25" and so on.

作為上述有機酸醯肼之市售品,可列舉:Ajinomoto Fine-Tech公 司製造之「Amicure VDH」、「Amicure VDH-J」、「Amicure UDH」及「Amicure UDH-J」等。 As a commercial item of the above organic acid bismuth, Ajinomoto Fine-Tech "Amicure VDH", "Amicure VDH-J", "Amicure UDH" and "Amicure UDH-J" manufactured by the company.

就進一步提高組合物之快速硬化性之觀點而言,上述潛伏性硬化劑較佳為潛伏性咪唑硬化劑,更佳為微膠囊型咪唑硬化劑。就進一步提高組合物之保存穩定性之觀點而言,上述潛伏性硬化劑更佳為微膠囊型潛伏性硬化劑,更佳為微膠囊型咪唑硬化劑。 The latent curing agent is preferably a latent imidazole hardener from the viewpoint of further improving the rapid hardenability of the composition, and more preferably a microcapsule type imidazole hardener. The latent curing agent is more preferably a microcapsule latent curing agent, and more preferably a microcapsule type imidazole hardening agent, from the viewpoint of further improving the storage stability of the composition.

作為上述微膠囊型咪唑硬化劑之市售品,可列舉:旭化成E-MATERIALS公司製造之「Novacure HX3941HP」、「Novacure HX3921HP」、「Novacure HX3721」、「Novacure HX3722」、「Novacure HX3748」、「Novacure HX3088」、「Novacure HX3741」、「Novacure HX3742」及「Novacure HX3613」等。 As a commercial item of the above-mentioned microcapsule-type imidazole curing agent, "Novacure HX3941HP", "Novacure HX3921HP", "Novacure HX3721", "Novacure HX3722", "Novacure HX3748", "Novacure" manufactured by Asahi Kasei E-MATERIALS Co., Ltd. HX3088", "Novacure HX3741", "Novacure HX3742" and "Novacure HX3613".

相對於上述熱硬化性化合物100重量份,上述潛伏性硬化劑之含量較佳為1重量份以上,更佳為5重量份以上,且較佳為65重量份以下,更佳為55重量份以下。若上述潛伏性硬化劑之含量為上述下限以上及上述上限以下,則組合物之快速硬化性及銅電極間之導通性平衡良好地變高。 The content of the latent curing agent is preferably 1 part by weight or more, more preferably 5 parts by weight or more, and preferably 65 parts by weight or less, more preferably 55 parts by weight or less based on 100 parts by weight of the thermosetting compound. . When the content of the latent curing agent is not less than the above lower limit and not more than the above upper limit, the rapid hardenability of the composition and the conductivity between the copper electrodes are well balanced.

[具有芳香族骨架之咪唑化合物] [Imidazole compound having an aromatic skeleton]

上述具有芳香族骨架之咪唑化合物並非潛伏性硬化劑。關於上述具有芳香族骨架之咪唑化合物,係將潛伏性硬化劑除外。上述硬化性組合物所含有之潛伏性硬化劑、與上述硬化性組合物所含有之具有芳香族骨架之咪唑化合物不同。上述具有芳香族骨架之咪唑化合物可僅使用1種,亦可併用2種以上。 The above imidazole compound having an aromatic skeleton is not a latent curing agent. The imidazole compound having an aromatic skeleton is excluded from the latent curing agent. The latent curing agent contained in the curable composition is different from the imidazole compound having an aromatic skeleton contained in the curable composition. The imidazole compound having an aromatic skeleton may be used alone or in combination of two or more.

作為上述芳香族骨架,可列舉:芳基骨架、萘骨架及蒽骨架等。就有效提高銅電極間之導通性之觀點而言,上述芳香族骨架較佳為芳基骨架,更佳為苯基骨架。 Examples of the aromatic skeleton include an aryl skeleton, a naphthalene skeleton, and an anthracene skeleton. From the viewpoint of effectively improving the conductivity between the copper electrodes, the aromatic skeleton is preferably an aryl skeleton, and more preferably a phenyl skeleton.

作為上述具有芳香族骨架之咪唑化合物,可列舉:2-苯咪唑、2- 苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽、2-苯基-4-甲基-5-二羥基甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、及2-苯基-4-甲基-5-羥基甲基咪唑等。 Examples of the imidazole compound having an aromatic skeleton include 2-benzimidazole and 2- Phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-benzazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2- Benzimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2-phenyl-4-methyl-5-dihydroxymethylimidazole, 2-phenyl-4,5-di Hydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole.

相對於上述熱硬化性化合物100重量份,上述具有芳香族骨架之咪唑化合物之含量較佳為0.1重量份以上,更佳為0.5重量份以上,且較佳為10重量份以下,更佳為5重量份以下。若上述具有芳香族骨架之咪唑化合物之含量為上述下限以上及上述上限以下,則組合物之快速硬化性及銅電極間之導通性平衡良好地變高。 The content of the imidazole compound having an aromatic skeleton is preferably 0.1 part by weight or more, more preferably 0.5 part by weight or more, and preferably 10 parts by weight or less, more preferably 5 parts by weight based on 100 parts by weight of the thermosetting compound. Parts by weight or less. When the content of the imidazole compound having an aromatic skeleton is not less than the above lower limit and not more than the above upper limit, the rapid hardenability of the composition and the balance between the copper electrodes are favorably increased.

[其他成分] [Other ingredients]

上述硬化性組合物亦可視需要進而含有助焊劑、接著力調整劑、無機填充劑、溶劑、儲存穩定劑、離子捕捉劑或矽烷偶合劑等。 The curable composition may further contain a flux, an adhesion adjuster, an inorganic filler, a solvent, a storage stabilizer, an ion scavenger or a decane coupling agent, as needed.

上述硬化性化合物較佳為含有助焊劑。藉由使用助焊劑,從而銅電極之導通性進一步變高。可使用公知之助焊劑作為上述助焊劑。上述助焊劑可僅使用1種,亦可併用2種以上。 The curable compound preferably contains a flux. By using a flux, the conductivity of the copper electrode is further increased. A known flux can be used as the above flux. The flux may be used alone or in combination of two or more.

上述助焊劑並無特別限定。可使用通常用於焊料接合等之助焊劑作為該助焊劑。作為上述助焊劑,例如可列舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。 The flux is not particularly limited. A flux which is usually used for solder bonding or the like can be used as the flux. Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, a phosphoric acid, a derivative of phosphoric acid, an organic halide, an anthracene, and an organic acid. And turpentine and so on.

作為上述熔鹽,可列舉氯化銨等。作為上述有機酸,可列舉乳酸、檸檬酸、硬脂酸及麩胺酸等。作為上述松脂,可列舉活化松脂及非活化松脂等。上述助焊劑較佳為松脂。藉由使用松脂,從而電極間之連接電阻進一步變低。 Examples of the molten salt include ammonium chloride and the like. Examples of the organic acid include lactic acid, citric acid, stearic acid, and glutamic acid. Examples of the rosin include activated rosin and non-activated rosin. The above flux is preferably rosin. By using turpentine, the connection resistance between the electrodes is further lowered.

上述松脂係以松香酸為主成分之松香類。上述助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,從而電極間之連接電阻進一步變低。又,上述助焊劑較佳為具有羧基之有機酸。作為具 有羧基之化合物,可列舉:於烷基鏈鍵結有羧基之化合物、於芳香環鍵結有羧基之化合物等。於該等具有羧基之化合物中,亦可於烷基鏈或芳香環進而鍵結有羥基。鍵結於烷基鏈或芳香環之羧基之數量較佳為1~3個,更佳為1或2個。於烷基鏈鍵結有羧基之化合物中之烷基鏈之碳數較佳為3以上,且較佳為8以下,更佳為6以下。作為於烷基鏈鍵結有羧基之化合物之具體例,可列舉己酸(碳數5、羧基1個)及戊二酸(碳數4、羧基2個)等。作為具有羧基與羥基之化合物之具體例,可列舉蘋果酸及檸檬酸等。作為於芳香環鍵結有羧基之化合物之具體例,可列舉:苯甲酸、鄰苯二甲酸、苯甲酸酐及鄰苯二甲酸酐等。 The above rosin is a rosin mainly composed of rosin acid. The above flux is preferably rosin, more preferably rosin acid. By using the preferred flux, the connection resistance between the electrodes is further lowered. Further, the flux is preferably an organic acid having a carboxyl group. As a The compound having a carboxyl group may, for example, be a compound having a carboxyl group bonded to an alkyl chain or a compound having a carboxyl group bonded to an aromatic ring. In the compound having a carboxyl group, a hydroxyl group may be further bonded to the alkyl chain or the aromatic ring. The number of carboxyl groups bonded to the alkyl chain or the aromatic ring is preferably from 1 to 3, more preferably from 1 or 2. The number of carbon atoms of the alkyl chain in the compound having a carboxyl group bonded to the alkyl chain is preferably 3 or more, and is preferably 8 or less, more preferably 6 or less. Specific examples of the compound having a carboxyl group bonded to the alkyl chain include hexanoic acid (having a carbon number of 5 and a carboxyl group) and glutaric acid (having a carbon number of 4 and a carboxyl group). Specific examples of the compound having a carboxyl group and a hydroxyl group include malic acid, citric acid, and the like. Specific examples of the compound having a carboxyl group bonded to the aromatic ring include benzoic acid, phthalic acid, benzoic anhydride, and phthalic anhydride.

相對於上述熱硬化性化合物100重量份,上述助焊劑之含量較佳為0.5重量份以上,更佳為1重量份以上,且較佳為10重量份以下,更佳為5重量份以下。若上述助焊劑之含量為上述下限以上及上限以下,則助焊劑之添加效果進一步有效地顯現。因此,組合物中之助焊劑效果變高,例如銅電極之導通性進一步變高。 The content of the flux is preferably 0.5 parts by weight or more, more preferably 1 part by weight or more, and preferably 10 parts by weight or less, and more preferably 5 parts by weight or less based on 100 parts by weight of the thermosetting compound. When the content of the flux is not less than the above lower limit and not more than the upper limit, the effect of adding the flux is more effectively exhibited. Therefore, the flux effect in the composition becomes high, and for example, the conductivity of the copper electrode is further increased.

(包含導電性粒子之電子零件用硬化性組合物) (curable composition for electronic parts containing conductive particles)

於上述硬化性組合物包含導電性粒子之情形時,可使用上述硬化性組合物作為導電材料。上述導電材料較佳為各向異性導電材料。 In the case where the curable composition contains conductive particles, the curable composition described above can be used as the conductive material. The above conductive material is preferably an anisotropic conductive material.

上述導電性粒子係將連接對象構件之電極間電性連接。具體而言,上述導電性粒子例如將電路基板與半導體晶片之電極間電性連接。上述導電性粒子只要為具有導電性之粒子,則無特別限定。上述導電性粒子只要於導電性之表面具有導電部即可。 The conductive particles are electrically connected between the electrodes of the member to be connected. Specifically, the conductive particles are electrically connected between the circuit board and the electrodes of the semiconductor wafer, for example. The conductive particles are not particularly limited as long as they are conductive particles. The conductive particles may have a conductive portion on the surface of the conductive material.

作為上述導電性粒子,例如可列舉:有機粒子、除金屬粒子外之無機粒子、有機無機混合粒子或金屬粒子等之表面由導電層(金屬層)被覆而成之導電性粒子、或實際上僅由金屬構成之金屬粒子等。 Examples of the conductive particles include conductive particles in which the surface of the organic particles, inorganic particles other than the metal particles, organic-inorganic hybrid particles, or metal particles are coated with a conductive layer (metal layer), or actually only Metal particles composed of metal, and the like.

於圖3中以剖面圖表示可用於本發明之一實施形態之電子零件用硬化性組合物之導電性粒子。 Fig. 3 is a cross-sectional view showing conductive particles which can be used in the curable composition for electronic parts according to an embodiment of the present invention.

圖3所示之導電性粒子21具有樹脂粒子22(基材粒子)、與配置於樹脂粒子22之表面22a上之導電層23。導電層23被覆樹脂粒子22之表面22a。導電性粒子21係樹脂粒子22之表面22a由導電層23被覆之被覆粒子。因此,導電性粒子21於表面21a具有導電層23。除樹脂粒子22外,亦可使用金屬粒子等。 The conductive particles 21 shown in FIG. 3 have resin particles 22 (base particles) and a conductive layer 23 disposed on the surface 22a of the resin particles 22. The conductive layer 23 covers the surface 22a of the resin particles 22. The conductive particles 21 are coated particles in which the surface 22a of the resin particles 22 is covered with the conductive layer 23. Therefore, the conductive particles 21 have the conductive layer 23 on the surface 21a. In addition to the resin particles 22, metal particles or the like can also be used.

導電層23具有配置於樹脂粒子22之表面22a上之第1導電層24、與配置於該第1導電層24之表面24a上之焊料層25(焊料、第2導電層)。導電層23之外側之表面層為焊料層25。因此,導電性粒子21具有作為導電層23之一部分之焊料層25,進而於樹脂粒子22與焊料層25之間具有作為導電層23之一部分之與焊料層25不同之第1導電層24。如上所述,導電層23可具有多層構造,可具有2層以上之積層構造。 The conductive layer 23 has a first conductive layer 24 disposed on the surface 22a of the resin particle 22, and a solder layer 25 (solder, second conductive layer) disposed on the surface 24a of the first conductive layer 24. The surface layer on the outer side of the conductive layer 23 is the solder layer 25. Therefore, the conductive particles 21 have the solder layer 25 as a part of the conductive layer 23, and further have the first conductive layer 24 different from the solder layer 25 as a part of the conductive layer 23 between the resin particles 22 and the solder layer 25. As described above, the conductive layer 23 may have a multilayer structure and may have a laminated structure of two or more layers.

如上述般,導電層23具有2層構造。如圖4所示之變化例般,導電性粒子31亦可具有焊料層32作為單層之導電層。只要導電性粒子中之導電層之至少外側之表面層(表面)為焊料層(焊料)即可。其中,導電性粒子21與導電性粒子31中,導電性粒子21由於導電性粒子之製作容易故而較佳。又,亦可使用如圖5所示之變化例般於核心不具有基材粒子而並非核殼粒子之焊料粒子,即導電性粒子41。導電性粒子41之中心部亦由焊料形成。 As described above, the conductive layer 23 has a two-layer structure. As in the variation shown in FIG. 4, the conductive particles 31 may have the solder layer 32 as a single-layer conductive layer. It suffices that at least the outer surface layer (surface) of the conductive layer in the conductive particles is a solder layer (solder). Among them, among the conductive particles 21 and the conductive particles 31, the conductive particles 21 are preferable because the conductive particles are easily produced. Further, as the variation shown in FIG. 5, it is also possible to use the solder particles which do not have the substrate particles in the core and are not the core-shell particles, that is, the conductive particles 41. The central portion of the conductive particles 41 is also formed of solder.

導電性粒子21、31、41可用於上述導電材料。 The conductive particles 21, 31, 41 can be used for the above conductive material.

上述導電部並無特別限定。作為構成上述導電部之金屬,可列舉:金、銀、銅、鎳、鈀及錫等。作為上述導電層,可列舉:金層、銀層、銅層、鎳層、鈀層或含有錫之導電層等。 The conductive portion is not particularly limited. Examples of the metal constituting the conductive portion include gold, silver, copper, nickel, palladium, and tin. Examples of the conductive layer include a gold layer, a silver layer, a copper layer, a nickel layer, a palladium layer, and a conductive layer containing tin.

就使電極與導電性粒子之接觸面積變大而進一步提高電極間之導通可靠性的觀點而言,上述導電性粒子較佳為具有樹脂粒子、與配置於該樹脂粒子之表面上之導電層(第1導電層)。就進一步提高電極間之導通可靠性之觀點而言,上述導電性粒子較佳為至少導電性之外 側之表面為低熔點金屬層之導電性粒子。就進一步提高耐濕熱性及導通性之觀點而言,上述導電性粒子更佳為具有基材粒子、與配置於該基材粒子之表面上之導電層,且該導電層之至少外側之表面為低熔點金屬層。上述導電性粒子更佳為具有樹脂粒子、與配置於該樹脂粒子之表面上之導電層,且該導電層之至少外側之表面為低熔點金屬層。 The conductive particles preferably have resin particles and a conductive layer disposed on the surface of the resin particles from the viewpoint of increasing the contact area between the electrode and the conductive particles and further improving the conduction reliability between the electrodes ( First conductive layer). The conductive particles are preferably at least electrically conductive from the viewpoint of further improving the conduction reliability between the electrodes. The surface of the side is a conductive particle of a low melting point metal layer. The conductive particles further preferably have a substrate particle and a conductive layer disposed on a surface of the substrate particle from the viewpoint of further improving moisture heat resistance and conductivity, and at least the outer surface of the conductive layer is Low melting point metal layer. More preferably, the conductive particles have resin particles and a conductive layer disposed on the surface of the resin particles, and at least the outer surface of the conductive layer is a low-melting metal layer.

上述低熔點金屬層係含有低熔點金屬之層。該所謂低熔點金屬,係指熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述低熔點金屬較佳為含有錫。低熔點金屬所含有之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述低熔點金屬中之錫之含量為上述下限以上,則低熔點金屬與電極之連接可靠性進一步變高。再者,上述錫之含量可使用高頻電感耦合電漿發光分光分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等進行測定。就進一步提高耐濕熱性及導通性之觀點而言,上述導電性粒子較佳為導電性之外側之表面為焊料之導電性粒子。 The low melting point metal layer contains a layer of a low melting point metal. The term "low melting point metal" means a metal having a melting point of 450 ° C or less. The melting point of the low melting point metal is preferably 300 ° C or lower, more preferably 160 ° C or lower. Further, the low melting point metal preferably contains tin. The content of tin in 100% by weight of the metal contained in the low melting point metal is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin in the low melting point metal is at least the above lower limit, the connection reliability between the low melting point metal and the electrode is further increased. In addition, a high-frequency inductively coupled plasma-based spectroscopic spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer ("EDX-800HS" manufactured by Shimadzu Corporation) can be used. ), etc. are measured. In view of further improving the moist heat resistance and the conductivity, the conductive particles are preferably conductive particles having a surface on the outer side of the conductive material.

於導電部之外側之表面為低熔點金屬層之情形時,低熔點金屬層熔融而接合於電極,從而低熔點金屬層使電極間導通。例如,低熔點金屬層與電極容易面接觸而並非點接觸,因此連接電阻變低。又,藉由使用至少導電性之外側之表面為低熔點金屬層之導電性粒子,從而低熔點金屬層與電極之接合強度變高,結果,低熔點金屬層與電極之剝離變得進一步難以產生,而導通可靠性有效地變高。 When the surface on the outer side of the conductive portion is a low melting point metal layer, the low melting point metal layer is melted and bonded to the electrode, so that the low melting point metal layer conducts between the electrodes. For example, the low-melting-point metal layer is easily in surface contact with the electrode and is not in point contact, so the connection resistance is lowered. Further, by using at least a conductive particle having a surface on the outer side of the conductive material as a low-melting-point metal layer, the bonding strength between the low-melting-point metal layer and the electrode is increased, and as a result, peeling of the low-melting-point metal layer from the electrode is further difficult to occur. And the conduction reliability is effectively increased.

構成上述低熔點金屬層之低熔點金屬並無特別限定。上述低熔點金屬較佳為錫、或含有錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。其中,就對電極之潤濕性優異方面而言,上述低熔點金屬較佳為錫、 錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 The low melting point metal constituting the low melting point metal layer is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. Wherein, in terms of excellent wettability of the electrode, the low melting point metal is preferably tin, Tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, tin-indium alloy. More preferably, it is a tin-bismuth alloy or a tin-indium alloy.

又,上述低熔點金屬較佳為焊料。構成上述焊料之材料並無特別限定,但較佳為基於JIS Z3001:焊接用語而液相線為450℃以下之填充金屬材。作為上述焊料之組成,例如可列舉包含鋅、金、鉛、銅、錫、鉍、銦等之金屬組成。其中,較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料較佳為不含鉛,且較佳為含有錫與銦之焊料、或含有錫與鉍之焊料。 Further, the low melting point metal is preferably a solder. The material constituting the solder is not particularly limited, but is preferably a filler metal material having a liquidus of 450 ° C or less based on JIS Z3001: welding terms. Examples of the composition of the solder include a metal composition containing zinc, gold, lead, copper, tin, antimony, indium, or the like. Among them, a tin-indium-based (117 ° C eutectic) or a tin-lanthanide (139 ° C eutectic) having a low melting point and no lead is preferable. That is, the solder is preferably free from lead, and is preferably a solder containing tin and indium or a solder containing tin and antimony.

為了進一步提高上述低熔點金屬與電極之接合強度,上述低熔點金屬亦可含有鎳、銅、銻、鋁、鋅、鐵、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。就更進一步提高低熔點金屬與電極之接合強度之觀點而言,上述低熔點金屬較佳為含有鎳、銅、銻、鋁或鋅。就進一步提高低熔點金屬與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於低熔點金屬100重量%中,較佳為0.0001重量%以上且較佳為1重量%以下。 In order to further improve the bonding strength between the low melting point metal and the electrode, the low melting point metal may also contain nickel, copper, lanthanum, aluminum, zinc, iron, gold, titanium, phosphorus, lanthanum, cerium, cobalt, lanthanum, manganese, chromium, Metals such as molybdenum and palladium. From the viewpoint of further improving the bonding strength between the low melting point metal and the electrode, the low melting point metal preferably contains nickel, copper, ruthenium, aluminum or zinc. From the viewpoint of further improving the bonding strength between the low melting point metal and the electrode, the content of the metal for improving the bonding strength is preferably 0.0001% by weight or more and preferably 1% by weight based on 100% by weight of the low melting point metal. the following.

上述導電性粒子較佳為具有樹脂粒子、與配置於該樹脂粒子之表面上之導電層,且該導電層之外側之表面為低熔點金屬層,於上述樹脂粒子與上述低熔點金屬層(焊料層等)之間具有與上述低熔點金屬層不同之第2導電層。於該情形時,上述低熔點金屬層為上述導電層整體之一部分,且上述第2導電層為上述導電層整體之一部分。 Preferably, the conductive particles have resin particles and a conductive layer disposed on a surface of the resin particles, and a surface on the outer side of the conductive layer is a low melting point metal layer, and the resin particles and the low melting point metal layer (solder) A layer or the like has a second conductive layer different from the above-described low melting point metal layer. In this case, the low melting point metal layer is a part of the entire conductive layer, and the second conductive layer is a part of the entire conductive layer.

上述與低熔點金屬層不同之上述第2導電層較佳為含有金屬。構成該第2導電層之金屬並無特別限定。作為該金屬,例如可列舉:金、銀、銅、鉑、鈀、鋅、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘、以及該等之合金等。又,亦可使用摻錫氧化銦(ITO)作為上述金屬。上述金屬可僅使用1種,亦可併用2種以上。 The second conductive layer different from the low melting point metal layer preferably contains a metal. The metal constituting the second conductive layer is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, and cadmium, and the like. Further, tin-doped indium oxide (ITO) may be used as the above metal. These metals may be used alone or in combination of two or more.

上述第2導電層較佳為鎳層、鈀層、銅層或金層,更佳為鎳層或 金層,進而較佳為銅層。導電性粒子較佳為具有鎳層、鈀層、銅層或金層,更佳為具有鎳層或金層,進而較佳為具有銅層。將具有該等較佳導電層之導電性粒子用於電極間之連接,藉此電極間之連接電阻進一步變低。又,於該等較佳之導電層之表面更容易形成低熔點金屬層。再者,上述第2導電層亦可為焊料層等低熔點金屬層。導電性粒子亦可具有複數層之低熔點金屬層。 The second conductive layer is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or The gold layer is further preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably have a nickel layer or a gold layer, and further preferably have a copper layer. The conductive particles having the preferred conductive layers are used for the connection between the electrodes, whereby the connection resistance between the electrodes is further lowered. Moreover, it is easier to form a low melting point metal layer on the surface of the preferred conductive layers. Further, the second conductive layer may be a low melting point metal layer such as a solder layer. The conductive particles may also have a plurality of layers of a low melting point metal layer.

上述低熔點金屬層之厚度較佳為0.1μm以上,更佳為0.5μm以上,進而較佳為1μm以上,且較佳為50μm以下,更佳為10μm以下,進而較佳為5μm以下,尤佳為3μm以下。若上述低熔點金屬層之厚度為上述下限以上,則導電性充分變高。若上述低熔點金屬層之厚度為上述上限以下,則樹脂粒子與低熔點金屬層之熱膨脹率之差變小,而低熔點金屬層變得難以剝離。 The thickness of the low-melting-point metal layer is preferably 0.1 μm or more, more preferably 0.5 μm or more, further preferably 1 μm or more, and more preferably 50 μm or less, more preferably 10 μm or less, still more preferably 5 μm or less, and particularly preferably It is 3 μm or less. When the thickness of the low-melting-point metal layer is at least the above lower limit, the electrical conductivity is sufficiently high. When the thickness of the low-melting-point metal layer is not more than the above upper limit, the difference in thermal expansion coefficient between the resin particles and the low-melting-point metal layer becomes small, and the low-melting-point metal layer becomes difficult to peel off.

於導電層為低熔點金屬層以外之導電層之情形時,或導電層具有多層構造之情形時,導電層之整體厚度較佳為0.1μm以上,更佳為0.5μm以上,進而較佳為1μm以上,且較佳為50μm以下,更佳為10μm以下,進而較佳為5μm以下,尤佳為3μm以下。 In the case where the conductive layer is a conductive layer other than the low melting point metal layer, or when the conductive layer has a multilayer structure, the overall thickness of the conductive layer is preferably 0.1 μm or more, more preferably 0.5 μm or more, and still more preferably 1 μm. The above is preferably 50 μm or less, more preferably 10 μm or less, further preferably 5 μm or less, and particularly preferably 3 μm or less.

上述導電性粒子之平均粒徑較佳為100μm以下,更佳為20μm以下,進而較佳為未達20μm,進而更佳為15μm以下,尤佳為10μm以下。導電性粒子之平均粒徑較佳為0.5μm以上,更佳為1μm以上。就進一步提高經受熱歷程之情形之連接構造體之連接可靠性的觀點而言,導電性粒子之平均粒徑尤佳為1μm以上且10μm以下,最佳為1μm以上且4μm以下。導電性粒子之平均粒徑亦較佳為3μm以下。 The average particle diameter of the conductive particles is preferably 100 μm or less, more preferably 20 μm or less, further preferably less than 20 μm, still more preferably 15 μm or less, and still more preferably 10 μm or less. The average particle diameter of the conductive particles is preferably 0.5 μm or more, and more preferably 1 μm or more. The average particle diameter of the conductive particles is preferably 1 μm or more and 10 μm or less, and more preferably 1 μm or more and 4 μm or less, from the viewpoint of further improving the connection reliability of the bonded structure in the case of a heat history. The average particle diameter of the conductive particles is also preferably 3 μm or less.

因係適合上述導電材料中之導電性粒子之尺寸,且可使電極間之間隔進一步變小,故導電性粒子之平均粒徑尤佳為1μm以上且100μm以下。 Since the size of the conductive particles in the conductive material is suitable and the interval between the electrodes can be further reduced, the average particle diameter of the conductive particles is preferably 1 μm or more and 100 μm or less.

上述導電性粒子之「平均粒徑」係表示數量平均粒徑。導電性 粒子之平均粒徑係藉由利用電子顯微鏡或光學顯微鏡對任意50個導電性粒子進行觀察並算出平均值而求出。 The "average particle diameter" of the above conductive particles means a number average particle diameter. Conductivity The average particle diameter of the particles was determined by observing an arbitrary 50 conductive particles by an electron microscope or an optical microscope and calculating an average value.

上述導電性粒子之表面亦可經絕緣性粒子等絕緣性材料、助焊劑等進行絕緣處理。絕緣性材料、助焊劑等較佳為藉由利用連接時之熱進行軟化、流動而自連接部被去除。藉此,可抑制電極間之短路。 The surface of the conductive particles may be insulated by an insulating material such as insulating particles or a flux. The insulating material, the flux, and the like are preferably removed from the joint portion by softening and flowing by heat at the time of connection. Thereby, the short circuit between the electrodes can be suppressed.

上述導電性粒子之含量並無特別限定。上述硬化性組合物100重量%中,上述導電性粒子之含量較佳為0.1重量%以上,更佳為0.5重量%以上,且較佳為40重量%以下,更佳為20重量%以下,進而較佳為15重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則可容易地將導電性粒子配置於應連接之上下之電極間。進而,不可連接之鄰接之電極間變得難以經由複數個導電性粒子而電性連接。即,可防止相鄰之電極間之短路。 The content of the above conductive particles is not particularly limited. The content of the conductive particles is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, and preferably 40% by weight or less, more preferably 20% by weight or less, based on 100% by weight of the curable composition. It is preferably 15% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conductive particles can be easily disposed between the electrodes to be connected above and below. Further, it is difficult to electrically connect the electrodes adjacent to each other that are not connectable via a plurality of conductive particles. That is, it is possible to prevent a short circuit between adjacent electrodes.

(電子零件用硬化性組合物之用途) (Use of curable composition for electronic parts)

上述硬化性組合物可用以將各種連接對象構件進行接著。其中,上述硬化性組合物可用於銅電極之連接。上述硬化性組合物可為膜,亦可為膏。上述硬化性組合物較佳為膏。若上述硬化性組合物為膏,則初期之連接電阻進一步變低。進而,亦可有效地維持被暴露於衝擊或高溫高濕後之連接電阻較低。 The above curable composition can be used to carry out various connection target members. Among them, the above curable composition can be used for the connection of copper electrodes. The curable composition may be a film or a paste. The above curable composition is preferably a paste. When the curable composition is a paste, the initial connection resistance is further lowered. Further, it is also effective to maintain a low connection resistance after being exposed to an impact or high temperature and high humidity.

於上述硬化性組合物為包含導電性粒子之導電材料之情形時,該導電材料可用作導電膏、或導電膜等。於上述導電材料被用作導電膜之情形時,亦可使不含有導電性粒子之膜積層於含有導電性粒子之該導電膜。再者,膜包括片。上述硬化性組合物較佳為膏狀之導電膏。上述導電膏較佳為各向異性導電膏。上述導電膜較佳為各向異性導電膜。 When the curable composition is a conductive material containing conductive particles, the conductive material can be used as a conductive paste, a conductive film, or the like. When the conductive material is used as a conductive film, a film containing no conductive particles may be laminated on the conductive film containing conductive particles. Furthermore, the film comprises a sheet. The above curable composition is preferably a paste-like conductive paste. The above conductive paste is preferably an anisotropic conductive paste. The above conductive film is preferably an anisotropic conductive film.

上述硬化性組合物可較佳地用以獲得如下連接構造體,該連接構造體具備表面具有第1電極之電極第1連接對象構件、表面具有第2 電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部。上述連接部係藉由使上述硬化性組合物硬化而形成。上述連接構造體中,上述第1電極及上述第2電極中之至少一者為銅電極。將上述第1電極與上述第2電極電性連接。更佳為上述第1電極及上述第2電極兩者為銅電極。 The curable composition is preferably used to obtain a connection structure having an electrode having a first electrode on its surface, a first connection member, and a surface having a second surface. a second connection target member of the electrode and a connection portion that connects the first connection target member and the second connection target member. The connecting portion is formed by curing the curable composition. In the connection structure, at least one of the first electrode and the second electrode is a copper electrode. The first electrode and the second electrode are electrically connected to each other. More preferably, both of the first electrode and the second electrode are copper electrodes.

較佳為上述電子零件用硬化性組合物包含導電性粒子,且獲得上述第1電極與上述第2電極由上述導電性粒子電性連接之連接構造體。 It is preferable that the curable composition for an electronic component contains conductive particles, and a connection structure in which the first electrode and the second electrode are electrically connected to each other by the conductive particles is obtained.

本發明之連接構造體之製造方法具備:於表面具有第1電極之第1連接對象構件與表面具有第2電極之第2連接對象構件之間配置上述電子零件用硬化性組合物的步驟;及藉由使上述電子零件用硬化性組合物硬化而形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,從而獲得將上述第1電極與上述第2電極電性連接之連接構造體的步驟。上述第1電極及上述第2電極中之至少一者為銅電極。 The method for producing a connection structure according to the present invention includes the step of disposing the curable composition for electronic components between a first connection member having a first electrode on its surface and a second connection member having a second electrode on its surface; and The connection portion connecting the first connection member and the second connection member is formed by curing the curable composition for electronic components, thereby obtaining a connection for electrically connecting the first electrode and the second electrode. The steps of the construct. At least one of the first electrode and the second electrode is a copper electrode.

於本發明之連接構造體之製造方法中,較佳為上述電子零件用硬化性組合物包含導電性粒子,且獲得上述第1電極與上述第2電極由上述導電性粒子電性連接之連接構造體。 In the method for producing a connection structure according to the present invention, it is preferable that the curable composition for electronic components includes conductive particles, and a connection structure in which the first electrode and the second electrode are electrically connected to each other by the conductive particles is obtained. body.

於圖1中以剖面圖模式性地表示使用本發明之一實施形態之硬化性組合物的連接構造體之一例。 Fig. 1 is a cross-sectional view schematically showing an example of a connection structure using a curable composition according to an embodiment of the present invention.

圖1所示之連接構造體1具備:第1連接對象構件2、第2連接對象構件4、及將第1連接對象構件2與第2連接對象構件4連接之連接部3。連接部3為硬化物層,且係藉由使包含導電性粒子5之電子零件用硬化性組合物(導電材料)硬化而形成。 The connection structure 1 shown in FIG. 1 includes a first connection object member 2, a second connection object member 4, and a connection portion 3 that connects the first connection object member 2 and the second connection object member 4. The connection portion 3 is a cured layer and is formed by curing a curable composition (conductive material) for an electronic component including the conductive particles 5 .

第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件4於表面(下表面)具有複數個第2電極4a。第1電極2a與第2電極4a中之至少一者為銅電極。第1電極2a與第2電極4a由1個或複數 個導電性粒子5電性連接。因此,第1、第2連接對象構件2、4由導電性粒子5電性連接。 The first connection target member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 4 has a plurality of second electrodes 4a on the front surface (lower surface). At least one of the first electrode 2a and the second electrode 4a is a copper electrode. The first electrode 2a and the second electrode 4a are composed of one or plural The conductive particles 5 are electrically connected. Therefore, the first and second connection object members 2 and 4 are electrically connected by the conductive particles 5 .

第1、第2電極2a、4a間之連接係通常藉由如下方式進行:將第1連接對象構件2與第2連接對象構件4以介隔上述硬化性組合物且第1、第2電極2a、4a彼此相對向之方式進行重合後,於使上述硬化性組合物硬化時進行加壓。通常導電性粒子5由於加壓而被壓縮。 The connection between the first and second electrodes 2a and 4a is usually performed by interposing the first connection member 2 and the second connection member 4 between the curable composition and the first and second electrodes 2a. After the 4a is superposed on each other, the pressure is increased when the curable composition is cured. Usually, the conductive particles 5 are compressed by pressurization.

上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、電容器及二極體等電子零件以及印刷基板、軟性印刷基板、玻璃環氧基板及玻璃基板等電路基板等電子零件等。 The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include electronic components such as a semiconductor wafer, a capacitor, and a diode, and electronic components such as a printed circuit board, a flexible printed circuit board, a glass epoxy substrate, and a glass substrate. Wait.

再者,上述硬化性組合物亦可不含導電性粒子。於該情形時,不藉由導電性粒子將第1、第2連接對象構件之電極間電性連接,例如使電極彼此接觸而可將電極間電性連接。 Further, the curable composition may not contain conductive particles. In this case, the electrodes of the first and second connection members are not electrically connected to each other by the conductive particles, and for example, the electrodes can be electrically connected to each other by bringing the electrodes into contact with each other.

於圖2中以剖面圖模式性地表示圖1所示之連接構造體之變化例。 A variation of the connection structure shown in Fig. 1 is schematically shown in cross section in Fig. 2 .

圖2所示之連接構造體11具備:第1連接對象構件12、第2連接對象構件14、及將第1連接對象構件12與第2連接對象構件14連接之連接部13。連接部13為硬化物層,且係藉由使不含導電性粒子之電子零件用硬化性組合物(導電材料)硬化而形成。 The connection structure 11 shown in FIG. 2 includes a first connection member 12, a second connection member 14, and a connection portion 13 that connects the first connection member 12 and the second connection member 14. The connection portion 13 is a cured layer, and is formed by curing a curable composition (conductive material) of an electronic component containing no conductive particles.

第1連接對象構件12於表面(上表面)具有複數個第1電極12a。第2連接對象構件14於表面(下表面)具有複數個第2電極14a。第1電極12a與第2電極14a中之至少一者為銅電極。第1電極12a與第2電極14a例如為凸塊電極。第1電極12a與第2電極14a不經由導電性粒子而相互接觸,藉此被電性連接。因此,第1、第2連接對象構件12、14被電性連接。 The first connection target member 12 has a plurality of first electrodes 12a on the front surface (upper surface). The second connection target member 14 has a plurality of second electrodes 14a on the front surface (lower surface). At least one of the first electrode 12a and the second electrode 14a is a copper electrode. The first electrode 12a and the second electrode 14a are, for example, bump electrodes. The first electrode 12a and the second electrode 14a are electrically connected to each other without being in contact with each other via the conductive particles. Therefore, the first and second connection object members 12 and 14 are electrically connected.

於上述硬化性組合物為導電材料之情形時,該導電材料例如可 用於軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、或軟性印刷基板與玻璃環氧基板之連接(FOB(Film on Board,鍍膜板))等。其中,上述導電材料較佳用於FOG用途或COG用途,更佳用於COG用途。上述硬化性組合物較佳為用於軟性印刷基板與玻璃基板之連接、或半導體晶片與軟性印刷基板之連接的導電材料,更佳為用於半導體晶片與軟性印刷基板之連接之導電材料。 In the case where the above curable composition is a conductive material, the conductive material may be, for example, For connection between flexible printed circuit board and glass substrate (FOG (Film on Glass)), connection between semiconductor wafer and flexible printed circuit board (COF (Chip on Film)), connection between semiconductor wafer and glass substrate (COG (Chip on Glass), or a connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)). Among them, the above conductive material is preferably used for FOG use or COG use, and is more preferably used for COG use. The curable composition is preferably a conductive material for connection between a flexible printed substrate and a glass substrate, or a connection between a semiconductor wafer and a flexible printed substrate, and more preferably a conductive material for connection between a semiconductor wafer and a flexible printed substrate.

以下,列舉實施例及比較例而對本發明具體地進行說明。本發明並不僅限於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

準備以下之調配成分。 Prepare the following ingredients.

(熱硬化性化合物) (thermosetting compound)

熱硬化性化合物1(含有環氧基之聚合物,日油公司製造之「MARPROOF G-01100」,重量平均分子量:12000,Tg:47℃,環氧當量:170g/eq) Thermosetting compound 1 (polymer containing epoxy group, "MARPROOF G-01100" manufactured by Nippon Oil Co., Ltd., weight average molecular weight: 12,000, Tg: 47 ° C, epoxy equivalent: 170 g / eq)

熱硬化性化合物2(間苯二酚型環氧化合物,Nagase chemteX公司製造之「EX-201」) Thermosetting compound 2 (resorcinol type epoxy compound, "EX-201" manufactured by Nagase ChemteX)

熱硬化性化合物3(三三縮水甘油醚,日產化學公司製造之「TEPIC-SS」) Thermosetting compound 3 (three Triglycidyl ether, "TEPIC-SS" manufactured by Nissan Chemical Co., Ltd.)

(潛伏性硬化劑) (latent hardener)

潛伏性硬化劑1(包藏咪唑化合物,日本曹達公司製造之「TEP-2MZ」) Latent hardener 1 (Imidazole compound, "TEP-2MZ" manufactured by Japan's Soda Corporation)

潛伏性硬化劑2(環氧基-咪唑加成物,四國化成工業公司製造之「CUREDUCT P-0505」) Latent hardener 2 (epoxy-imidazole addition product, "CUREDUCT P-0505" manufactured by Shikoku Chemical Industry Co., Ltd.)

潛伏性硬化劑3((微膠囊型潛伏性硬化劑),旭化成E-MATERIALS公司製造之「Novacure HX3921HP」) Latent hardener 3 ((microcapsule latent curing agent), "Novacure HX3921HP" by Asahi Kasei E-MATERIALS)

潛伏性硬化劑4((微膠囊型潛伏性硬化劑),旭化成E-MATERIALS公司製造之「Novacure HX3941HP」) Latent hardener 4 ((microcapsule latent curing agent), "Novacure HX3941HP" by Asahi Kasei E-MATERIALS)

(具有芳香族骨架之咪唑化合物) (imidazole compound having an aromatic skeleton)

含有芳香族骨架之咪唑化合物1(四國化成工業公司製造之「2-苯咪唑」) Imidazole compound 1 containing an aromatic skeleton ("2-benzimidazole" manufactured by Shikoku Chemical Industry Co., Ltd.)

含有芳香族骨架之咪唑化合物2(四國化成工業公司製造之「2-苯基-4-甲基咪唑」) Imidazole compound 2 containing an aromatic skeleton ("2-phenyl-4-methylimidazole" manufactured by Shikoku Chemical Industry Co., Ltd.)

含有芳香族骨架之咪唑化合物3(和光純藥工業公司製造之「苯并咪唑」) Imidazole compound 3 containing an aromatic skeleton ("benzimidazole" manufactured by Wako Pure Chemical Industries, Ltd.)

含有芳香族骨架之咪唑化合物4(和光純藥工業公司製造之「2-甲基苯并咪唑」) Imidazole compound 4 containing an aromatic skeleton ("2-methylbenzimidazole" manufactured by Wako Pure Chemical Industries, Ltd.)

(其他咪唑化合物) (Other imidazole compounds)

其他咪唑化合物(並非潛伏性硬化劑,不具有芳香族骨架,四國化成工業公司製造之「2-甲基咪唑」) Other imidazole compound (not a latent hardener, does not have an aromatic skeleton, "2-methylimidazole" manufactured by Shikoku Chemical Industries, Ltd.)

(導電性粒子) (conductive particles)

導電性粒子1:SnBi焊料粒子(福田金屬公司製造之「Sn58Bi-20」,平均粒徑4.5μm) Conductive particle 1: SnBi solder particles ("Sn58Bi-20" manufactured by Fukuda Metal Co., Ltd., average particle diameter: 4.5 μm)

導電性粒子2:(樹脂核心焊料被覆粒子,以下述步驟進行製作) Conductive particle 2: (resin core solder-coated particles, produced by the following procedure)

將二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-207」,平均粒徑7μm,軟化點330℃,10%K值(23℃)4GPa)進行無電鍍鎳,而於樹脂粒子之表面上形成厚度0.1μm之底層鍍鎳層。繼而,將形成有底層鍍鎳層之樹脂粒子進行電鍍銅,而形成厚度1μm之銅層。進而,使用含有錫及鉍之電鍍液進行電鍍,而形成厚度1μm之焊料層。以上述方式製作於樹脂粒子之表面上形成有厚度1μm之銅層、且於該銅層之表面形成有厚度1μm之焊料層(錫:鉍=43重量%:57重量%)的導電性粒子(平均粒徑14μm,CV值22%,樹脂核心焊料被 覆粒子)。 Divinylbenzene resin particles (Micropearl SP-207, manufactured by Sekisui Chemical Co., Ltd., average particle diameter: 7 μm, softening point: 330 ° C, 10% K value (23 ° C), 4 GPa), electroless nickel plating, and resin particles An underlying nickel plating layer having a thickness of 0.1 μm was formed on the surface. Then, the resin particles on which the underlying nickel plating layer was formed were plated with copper to form a copper layer having a thickness of 1 μm. Further, electroplating using a plating solution containing tin and antimony was carried out to form a solder layer having a thickness of 1 μm. In the above manner, a copper layer having a thickness of 1 μm was formed on the surface of the resin particle, and a conductive layer (tin: 铋 = 43% by weight: 57% by weight) having a thickness of 1 μm was formed on the surface of the copper layer ( The average particle size is 14 μm, the CV value is 22%, and the resin core solder is Overlying particles).

導電性粒子3:二乙烯苯樹脂粒子之鍍Au粒子(積水化學工業公司製造之「Au-210」,平均粒徑10μm) Conductive particle 3: Au-plated particles of divinylbenzene resin particles ("Au-210" manufactured by Sekisui Chemical Co., Ltd., average particle diameter: 10 μm)

(其他成分) (other ingredients)

填料(奈米二氧化矽、Tokuyama公司製造之「MT-10」) Filler (nano-cerium oxide, "MT-10" manufactured by Tokuyama Corporation)

接著賦予劑(信越化學工業公司製造之「KBE-403」) Then the agent ("KBE-403" manufactured by Shin-Etsu Chemical Co., Ltd.)

助焊劑(和光純藥工業公司製造之「戊二酸」) Flux ("glutaric acid" manufactured by Wako Pure Chemical Industries, Ltd.)

苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」) Phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.)

(實施例1~21及比較例1~3) (Examples 1 to 21 and Comparative Examples 1 to 3)

將下述表1~3所示之成分以下述表1~3所示之調配量進行調配,並使用行星式攪拌機以2000rpm進行5分鐘攪拌,藉此獲得各向異性導電膏。 The components shown in the following Tables 1 to 3 were blended in the amounts shown in the following Tables 1 to 3, and stirred at 2000 rpm for 5 minutes using a planetary mixer to obtain an anisotropic conductive paste.

(實施例22) (Example 22)

使苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」)10重量份以固形物成分成為50重量%之方式溶解於甲基乙基酮(MEK)中,而獲得溶解液。將下述表3所示之除苯氧基樹脂外之成分以下述表3所示之調配量與上述溶解液之總量進行調配,使用行星式攪拌機以2000rpm進行5分鐘攪拌後,使用棒式塗佈機以乾燥後之厚度成為30μm之方式塗佈於脫模PET(聚對苯二甲酸乙二酯)膜上。藉由在室溫下進行真空乾燥而去除MEK,藉此獲得各向異性導電膜。 10 parts by weight of a phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so as to have a solid content of 50% by weight to obtain a solution. The components other than the phenoxy resin shown in the following Table 3 were blended with the total amount of the above-mentioned solution in the amount shown in the following Table 3, and stirred at 2000 rpm for 5 minutes using a planetary mixer, and then a rod type was used. The coater was applied to a release PET (polyethylene terephthalate) film so that the thickness after drying became 30 μm. The MEK was removed by vacuum drying at room temperature, whereby an anisotropic conductive film was obtained.

(評價) (Evaluation)

(1)~(3)之評價項目所使用之連接構造體(FOB)之製作:準備於L/S為100μm/100μm之電極圖案中於上表面具有70根銅電極之玻璃環氧基板(FR-4基板)。又,準備於L/S為100μm/100μm之電極圖案中於下表面具有70根銅電極之軟性印刷基板。FR-4基板與軟性印刷基板之圖案係以藉由重疊而可形成菊鏈之方式進行設計。 Production of the connection structure (FOB) used in the evaluation items of (1) to (3): a glass epoxy substrate (FR) having 70 copper electrodes on the upper surface in an electrode pattern having an L/S of 100 μm/100 μm -4 substrate). Further, a flexible printed circuit board having 70 copper electrodes on the lower surface in an electrode pattern having an L/S of 100 μm/100 μm was prepared. The pattern of the FR-4 substrate and the flexible printed substrate is designed to form a daisy chain by overlapping.

將獲得之各向異性導電膏以厚度成為200μm之方式塗佈於上述玻璃環氧基板之上表面,而形成各向異性導電膏層。繼而,於各向異性導電膏層上以電極彼此相對向之方式積層上述軟性印刷基板。其後,以各向異性導電膏層之溫度成為170℃(實際壓接溫度)之方式調整加熱壓接頭之溫度,並且將加壓壓接頭置於軟性印刷基板之上表面,施加1MPa之壓力,於170℃下使各向異性導電膏層硬化直至硬化結束,而獲得連接構造體(FOB)。 The anisotropic conductive paste obtained was applied to the upper surface of the above glass epoxy substrate so as to have a thickness of 200 μm to form an anisotropic conductive paste layer. Then, the flexible printed circuit board is laminated on the anisotropic conductive paste layer so that the electrodes face each other. Thereafter, the temperature of the heated crimping joint is adjusted so that the temperature of the anisotropic conductive paste layer becomes 170 ° C (actual crimping temperature), and the pressure crimping joint is placed on the upper surface of the flexible printed substrate, and a pressure of 1 MPa is applied. The anisotropic conductive paste layer was hardened at 170 ° C until the end of hardening, and a bonded structure (FOB) was obtained.

(1)硬化速度 (1) Hardening speed

對獲得上述連接構造體時藉由加熱而各向異性導電膏層硬化為止之時間進行測定。具體而言,於獲得上述連接構造體之步驟中,於將各向異性導電膏塗佈於上述玻璃環氧基板後,於170℃加熱板上對各向異性導電膏層之表面之黏性(利用安田精機製作所製造之滾球黏性試驗器,啟動路程:100mm,測定部:100mm,傾斜角度30°,滾球 1/16於測定部未停止程度之黏著性)消失為止的凝膠化時間進行評價。利用下述基準判定硬化速度。 The time until the anisotropic conductive paste layer was cured by heating when the above-mentioned bonded structure was obtained was measured. Specifically, in the step of obtaining the above-mentioned bonded structure, after applying the anisotropic conductive paste to the glass epoxy substrate, the adhesion of the surface of the anisotropic conductive paste layer on a 170 ° C hot plate ( Rolling ball adhesion tester manufactured by Yasuda Seiki Co., Ltd., starting distance: 100mm, measuring part: 100mm, tilting angle 30°, rolling ball The gelation time until 1/16 of the adhesion of the measurement unit was not stopped was evaluated. The hardening speed was judged by the following criteria.

[硬化速度之判定基準] [Criteria for judging the hardening speed]

○:表面之黏性消失為止之凝膠化時間未達3秒鐘 ○: The gelation time of the surface disappeared for less than 3 seconds

×:表面之黏性消失為止之凝膠化時間為3秒鐘以上 ×: The gelation time until the viscosity of the surface disappears is 3 seconds or longer.

(2)導通性 (2) Continuity

使用獲得之連接構造體,利用4端子法對20處之連接電阻進行評價。利用下述之基準判定導通性。 The connection resistance at 20 points was evaluated by the 4-terminal method using the obtained connection structure. The conductivity was determined using the following criteria.

[導通性之判定基準] [Base of Judgment Benchmark]

○○:連接電阻之平均值為8.0Ω以下 ○○: The average value of the connection resistance is 8.0 Ω or less.

○:連接電阻之平均值超過8.0Ω且為10.0Ω以下 ○: The average value of the connection resistance exceeds 8.0 Ω and is 10.0 Ω or less.

△:連接電阻之平均值超過10.0Ω且為15.0Ω以下 △: The average value of the connection resistance exceeds 10.0 Ω and is 15.0 Ω or less.

×:連接電阻之平均值超過15.0Ω ×: The average value of the connection resistance exceeds 15.0 Ω

(3)耐熱衝擊性 (3) Thermal shock resistance

分別準備10個所獲得之連接構造體,將於-30℃下保持5分鐘、繼而升溫至80℃並保持5分鐘後、降溫至-30℃的過程設為1循環,每1循環設為1小時而進行冷熱循環試驗。500循環後,分別取出10個連接構造體。 Prepare 10 connected structures separately, and hold them at -30 ° C for 5 minutes, then raise the temperature to 80 ° C for 5 minutes, and then cool down to -30 ° C for 1 cycle, 1 hour for 1 cycle. The hot and cold cycle test was carried out. After 500 cycles, 10 connected structures were taken out.

針對500循環之冷熱循環試驗後之10個連接構造體,計算上下電極間發生導通不良之個數。利用下述之基準判定耐熱衝擊性。 The number of conduction failures between the upper and lower electrodes was calculated for the ten connected structures after the 500-cycle cold-heat cycle test. The thermal shock resistance was judged by the following criteria.

[耐熱衝擊性之判定基準] [Criteria for determination of thermal shock resistance]

○○:於全部10個連接構造體中,自冷熱循環試驗前之連接電阻起之連接電阻上升率為5%以下 ○○: The connection resistance increase rate of the connection resistance before the cold-heat cycle test was 5% or less in all the ten connection structures.

○:於全部10個連接構造體中,自冷熱循環試驗前之連接電阻起之連接電阻上升率超過5%且為10%以下 ○: In all of the ten connected structures, the connection resistance increase rate from the connection resistance before the cold-heat cycle test exceeded 5% and was 10% or less.

×:於10個連接構造體中,自冷熱循環試驗前之連接電阻起之連接電阻上升率超過10%的連接構造體為1個以上 ×: In the ten connected structures, the number of connected structures in which the connection resistance increase rate exceeds 10% from the connection resistance before the cooling and heating cycle test is one or more

(4)耐濕熱性 (4) Heat and humidity resistance

藉由偏壓試驗而對耐濕熱性進行評價。具體而言,準備於上表面具有L/S為100μm/100μm之70根梳形銅電極圖案之玻璃環氧基板(FR-4基板)。又,準備於下表面具有L/S為100μm/100μm之70根梳形銅電極圖案之軟性印刷基板。利用與(1)~(3)之評價項目所使用之連接構造體之製作方法相同的方法,獲得連接構造體。FR-4基板與軟性印刷基板之圖案係以藉由重疊而可形成梳形圖案之方式進行設計。利用下述之基準判定耐濕熱性。 The heat and humidity resistance was evaluated by a bias test. Specifically, a glass epoxy substrate (FR-4 substrate) having 70 comb-shaped copper electrode patterns having an L/S of 100 μm/100 μm on the upper surface was prepared. Further, a flexible printed circuit board having 70 comb-shaped copper electrode patterns having an L/S of 100 μm/100 μm was prepared on the lower surface. The connection structure was obtained by the same method as the production method of the connection structure used in the evaluation items (1) to (3). The pattern of the FR-4 substrate and the flexible printed substrate is designed to form a comb pattern by overlapping. The heat and humidity resistance was determined by the following criteria.

[耐濕熱性之判定基準] [Determination of Moisture and Heat Resistance]

○○:電阻值為108Ω以上 ○○: The resistance value is 10 8 Ω or more

○:電阻值為5×107Ω以上且未達108Ω ○: The resistance value is 5 × 10 7 Ω or more and less than 10 8 Ω

△:電阻值為107Ω以上且未達5×107Ω △: The resistance value is 10 7 Ω or more and less than 5 × 10 7 Ω

×:電阻值未達107Ω ×: The resistance value is less than 10 7 Ω

(5)保存穩定性 (5) preservation stability

將各向異性導電膏於23℃下靜置48小時,使用E型黏度計TV-33(東機產業公司製造)對靜置前後之黏度變化進行測定。根據靜置前後之黏度變化,利用下述之基準判定保存穩定性。 The anisotropic conductive paste was allowed to stand at 23 ° C for 48 hours, and the viscosity change before and after standing was measured using an E-type viscometer TV-33 (manufactured by Toki Sangyo Co., Ltd.). The storage stability was determined by the following criteria based on the change in viscosity before and after standing.

[保存穩定性之判定基準] [Criteria for the determination of preservation stability]

○○:靜置48小時後之黏度/初期黏度未達1.2 ○○: Viscosity/initial viscosity after standing for 48 hours did not reach 1.2

○:靜置48小時後之黏度/初期黏度為1.2以上且未達1.5 ○: Viscosity/initial viscosity after standing for 48 hours is 1.2 or more and less than 1.5

×:靜置48小時後之黏度/初期黏度為1.5以上 ×: Viscosity/initial viscosity after standing for 48 hours is 1.5 or more

(6)保存穩定性 (6) preservation stability

將各向異性導電膏於40℃下靜置48小時,使用E型黏度計TV-33(東機產業公司製造)對靜置前後之黏度變化進行測定。根據靜置前後之黏度變化,利用下述之基準判定保存穩定性。 The anisotropic conductive paste was allowed to stand at 40 ° C for 48 hours, and the viscosity change before and after standing was measured using an E-type viscometer TV-33 (manufactured by Toki Sangyo Co., Ltd.). The storage stability was determined by the following criteria based on the change in viscosity before and after standing.

[保存穩定性之判定基準] [Criteria for the determination of preservation stability]

○○:靜置48小時後之黏度/初期黏度未達1.2 ○○: Viscosity/initial viscosity after standing for 48 hours did not reach 1.2

○:靜置48小時後之黏度/初期黏度為1.2以上且未達1.35 ○: Viscosity/initial viscosity after standing for 48 hours is 1.2 or more and less than 1.35

△:靜置48小時後之黏度/初期黏度為1.35以上且未達1.5 △: The viscosity/initial viscosity after standing for 48 hours was 1.35 or more and less than 1.5.

×:靜置48小時後之黏度/初期黏度為1.5以上 ×: Viscosity/initial viscosity after standing for 48 hours is 1.5 or more

將結果示於下述之表1~3。 The results are shown in Tables 1 to 3 below.

表示使用上表面具有銅電極之玻璃環氧基板(連接對象構件)與下表面具有銅電極之軟性印刷基板(連接對象構件)的連接構造體之評價結果。確認,於該等2個連接對象構件中僅一電極為銅電極而另一個為鋁電極之情形時,亦可獲得與表1~3所示之評價結果相同傾向之評價結果。再者,於該等2個連接對象構件之電極雙方為鋁電極之情形時,實施例與比較例之評價結果差異較小。即,於2個連接對象構件之電極中之至少一者為銅電極之情形時,與2個連接對象構件之電極雙方為鋁電極之情形相比,實施例與比較例之評價結果差異較大。根據上述情況,確認藉由將本發明之電子零件用硬化性組合物用於銅電極之連接,而有效發揮本發明之效果。 The evaluation results of the connection structure using the glass epoxy substrate (connection target member) having the copper electrode on the upper surface and the flexible printed circuit board (connection target member) having the copper electrode on the lower surface are shown. When it is confirmed that only one of the two connection target members is a copper electrode and the other is an aluminum electrode, an evaluation result similar to the evaluation results shown in Tables 1 to 3 can be obtained. Further, in the case where both of the electrodes of the two connection target members are aluminum electrodes, the difference in evaluation results between the examples and the comparative examples is small. In other words, when at least one of the electrodes of the two connection target members is a copper electrode, the evaluation results of the examples and the comparative examples are different from those in the case where the electrodes of the two connection target members are aluminum electrodes. . In view of the above, it was confirmed that the curable composition for electronic parts of the present invention is used for the connection of copper electrodes, and the effects of the present invention are effectively exhibited.

又,於實施例16~21中,潛伏性硬化劑為微膠囊型咪唑硬化劑,因此於相對高溫(40℃)下之保存穩定性相當優異。 Further, in Examples 16 to 21, since the latent curing agent was a microcapsule-type imidazole curing agent, it was excellent in storage stability at a relatively high temperature (40 ° C).

1‧‧‧連接構造體 1‧‧‧Connection structure

2‧‧‧第1連接對象構件 2‧‧‧1st connection object component

2a‧‧‧第1電極 2a‧‧‧1st electrode

3‧‧‧連接部 3‧‧‧Connecting Department

4‧‧‧第2連接對象構件 4‧‧‧2nd connection object component

4a‧‧‧第2電極 4a‧‧‧2nd electrode

5‧‧‧導電性粒子 5‧‧‧Electrical particles

Claims (5)

一種電子零件用硬化性各向異性導電材料,其係用於銅電極之連接,且係各向異性導電膏或各向異性導電膜者,且包含:熱硬化性化合物、潛伏性硬化劑、具有芳香族骨架之咪唑化合物、及導電性粒子,上述潛伏性硬化劑與上述具有芳香族骨架之咪唑化合物不同,上述導電性粒子係導電性之外側之表面為焊料者,硬化性各向異性導電材料100重量%中,上述導電性粒子之含量為0.1重量%以上且40重量以下%。 A curable anisotropic conductive material for electronic parts, which is used for connection of copper electrodes, and is an anisotropic conductive paste or an anisotropic conductive film, and includes: a thermosetting compound, a latent curing agent, and The imidazole compound of the aromatic skeleton and the conductive particles, wherein the latent curing agent is different from the above-described imidazole compound having an aromatic skeleton, and the surface of the conductive particle-based conductive side is solder, and the curable anisotropic conductive material In 100% by weight, the content of the conductive particles is 0.1% by weight or more and 40% by weight or less. 如請求項1之電子零件用硬化性各向異性導電材料,其中上述潛伏性硬化劑為微膠囊型咪唑硬化劑。 The hardenable anisotropic conductive material for electronic parts according to claim 1, wherein the latent curing agent is a microcapsule type imidazole hardener. 如請求項1或2之電子零件用硬化性各向異性導電材料,其為膏。 A hardenable anisotropic conductive material for an electronic component according to claim 1 or 2, which is a paste. 一種連接構造體,其具備:表面具有第1電極之第1連接對象構件、表面具有第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部係藉由使如請求項1至3中任一項之電子零件用硬化性各向異性導電材料硬化而形成,上述第1電極及上述第2電極中之至少一者為銅電極,且上述第1電極與上述第2電極由上述導電性粒子電性連接。 A connection structure including: a first connection target member having a first electrode on its surface; a second connection target member having a second electrode on its surface; and a connection connecting the first connection target member and the second connection target member And the connection portion is formed by curing the curable anisotropic conductive material for an electronic component according to any one of claims 1 to 3, wherein at least one of the first electrode and the second electrode is In the copper electrode, the first electrode and the second electrode are electrically connected to each other by the conductive particles. 一種連接構造體之製造方法,其具備:於表面具有第1電極之第1連接對象構件與表面具有第2電極之第2連接對象構件之間配置如請求項1至3中任一項之電子零件用 硬化性各向異性導電材料的步驟,及藉由使上述電子零件用硬化性各向異性導電材料硬化而形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,從而獲得上述第1電極與上述第2電極由上述導電性粒子電性連接之連接構造體的步驟,且上述第1電極及上述第2電極中之至少一者為銅電極。 A method of manufacturing a connection structure, comprising: arranging an electron according to any one of claims 1 to 3 between a first connection member having a first electrode on a surface thereof and a second connection member having a second electrode on a surface thereof For parts And a step of forming the connection portion connecting the first connection member and the second connection member by curing the curable anisotropic conductive material for the electronic component, and obtaining the connection portion The first electrode and the second electrode are connected to each other by the conductive particles, and at least one of the first electrode and the second electrode is a copper electrode.
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