TWI581366B - The adjustment method of the dielectric constant of the insertion ring on the periphery of the electrostatic chuck - Google Patents
The adjustment method of the dielectric constant of the insertion ring on the periphery of the electrostatic chuck Download PDFInfo
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本發明是有關於一種半導體加工技術領域，特別是有關於一種靜電夾盤外圍的***環的介電常數的調整方法。The present invention relates to the field of semiconductor processing technology, and more particularly to a method for adjusting the dielectric constant of an insertion ring around an electrostatic chuck.
對待加工晶圓的電漿加工處理過程通常發生在電容耦合放電電漿加工設備的腔體內。如圖1所示，電容耦合放電電漿加工設備的反應腔體1內部包括用於放置和固定待加工晶圓的靜電夾盤2以及位於靜電夾盤2外圍的***環（insert ring）3。該***環3為絕緣體，並且該***環3用於實現靜電夾盤2與地隔離。The plasma processing of the wafer to be processed typically occurs in the cavity of a capacitively coupled discharge plasma processing apparatus. As shown in FIG. 1, the reaction chamber 1 of the capacitively coupled discharge plasma processing apparatus includes an electrostatic chuck 2 for placing and fixing a wafer to be processed, and an insert ring 3 located at the periphery of the electrostatic chuck 2. The insert ring 3 is an insulator, and the insert ring 3 serves to isolate the electrostatic chuck 2 from the ground.
在電漿加工處理時，待加工晶圓4固定在靜電夾盤2上，反應腔體1外部的射頻功率源RF源產生的射頻功率P0輸入到反應腔體1內，反應腔體1內部的靜電夾盤2和位於靜電夾盤2外圍的***環3對該輸入的射頻功率進行耦合。利用兩者耦合的功率在反應腔體1內對待加工晶圓4進行電漿加工處理。During the plasma processing, the wafer 4 to be processed is fixed on the electrostatic chuck 2, and the RF power P0 generated by the RF power source RF source outside the reaction chamber 1 is input into the reaction chamber 1, and the inside of the reaction chamber 1 is An electrostatic chuck 2 and an insert ring 3 located on the periphery of the electrostatic chuck 2 couple the input RF power. The wafer to be processed 4 is subjected to plasma processing in the reaction chamber 1 by the power coupled therebetween.
其中，藉由靜電夾盤耦合的射頻功率和藉由***環耦合的射頻功率會影響腔體內待加工晶圓上方的電漿密度及其分佈。Among them, the RF power coupled by the electrostatic chuck and the RF power coupled by the insertion ring affect the plasma density and its distribution above the wafer to be processed in the cavity.
通常情況下，為了提高待加工晶圓的加工質量，如待加工晶圓表面的均勻性，需要根據待加工晶圓的性能參數以及加工處理要達到的目標性能參數調整待加工晶圓邊緣上方的電漿密度及其分佈。Usually, in order to improve the processing quality of the wafer to be processed, such as the uniformity of the surface to be processed, it is necessary to adjust the edge of the wafer to be processed according to the performance parameters of the wafer to be processed and the target performance parameters to be processed. Plasma density and its distribution.
位於靜電夾盤外圍的***環的介電性能影響下電極邊緣表面上方的電漿密度及其分佈，並且在電漿加工過程中，待加工晶圓的邊緣與下電極的邊緣靠近或者重合，所以，當***環的介電常數變化後，待加工晶圓邊緣表面上方的電漿密度及其分佈也會發生變化。因此，可以藉由調整***環的介電常數實現對待加工晶圓邊緣表面上方的電漿密度及其分佈的調整。The dielectric properties of the insertion ring located at the periphery of the electrostatic chuck affect the plasma density and distribution above the edge surface of the lower electrode, and during the plasma processing, the edge of the wafer to be processed is close to or coincides with the edge of the lower electrode, so When the dielectric constant of the insertion ring changes, the plasma density and its distribution above the edge surface of the wafer to be processed also change. Therefore, the adjustment of the plasma density and its distribution over the edge surface of the wafer to be processed can be achieved by adjusting the dielectric constant of the interposer.
由於***環可以為中空腔體，其內部可以填充流體介電質。流體介電質的多少導致***環的介電常數不同。而流體介電質的多少可以藉由液位來確定。因此，習知技術中，通常藉由調整填充在中空腔體內的流體介電質的液位高低來達到調整***環的介電常數的目的。Since the insertion ring can be a hollow cavity, the interior of the ring can be filled with a fluid dielectric. The amount of fluid dielectric causes the dielectric constant of the interposer to be different. The amount of fluid dielectric can be determined by the liquid level. Therefore, in the prior art, the dielectric constant of the insertion ring is usually adjusted by adjusting the level of the fluid dielectric filled in the hollow cavity.
然而，中空腔體的橫截面尺寸有限，填充在其內的流體介電質的液位變化範圍也較小，因此，藉由調整流體介電質的液位調整***環的介電常數的方法，其調整幅度較小，有時不能使得介電常數達到目標值。而且，***環內的流體介電質的液位一般只能藉由目測粗略估計，因此，藉由液位調整***環的介電常數的方法不能對介電常數進行精確調整。However, the cross-sectional dimension of the hollow cavity is limited, and the liquid level of the fluid dielectric filled therein is also small, and therefore, the method of adjusting the dielectric constant of the insertion ring by adjusting the liquid level of the fluid dielectric The adjustment range is small, and sometimes the dielectric constant cannot be made to reach the target value. Moreover, the liquid level of the fluid dielectric inserted into the ring can generally only be roughly estimated by visual inspection. Therefore, the method of adjusting the dielectric constant of the insertion ring by the liquid level cannot accurately adjust the dielectric constant.
有鑑於此，本發明提供了一種靜電夾盤外圍的***環的介電常數的調整方法，以實現對位於靜電夾盤外圍的***環的介電常數精確且大幅度的調整。In view of the above, the present invention provides a method of adjusting the dielectric constant of an insertion ring at the periphery of an electrostatic chuck to achieve accurate and substantial adjustment of the dielectric constant of the insertion ring located at the periphery of the electrostatic chuck.
為了達到上述發明目的，本發明採用了如下技術方案：In order to achieve the above object, the present invention adopts the following technical solutions:
一種靜電夾盤外圍的***環的介電常數的調整方法，***環為能夠通入和排出流體的中空腔體結構，調整方法包括：A method for adjusting the dielectric constant of an insertion ring around an electrostatic chuck, the insertion ring being a hollow cavity structure capable of introducing and discharging a fluid, the adjustment method comprising:
步驟A、獲取***環的預定介電常數；預定介電常數由反應腔體內待加工晶圓上方的電漿密度及其分佈確定；Step A: obtaining a predetermined dielectric constant of the insertion ring; the predetermined dielectric constant is determined by a plasma density and a distribution thereof above the wafer to be processed in the reaction chamber;
步驟B、根據***環的預定介電常數，選取與預定介電常數相對應的流體介電質；以及Step B: selecting a fluid dielectric corresponding to the predetermined dielectric constant according to a predetermined dielectric constant of the insertion ring;
步驟C、向中空腔體內通入選取的流體介電質。Step C, introducing a selected fluid dielectric into the hollow cavity.
較佳較佳地，根據所述***環的預定介電常數選取的流體介電質至少包括兩種，所述步驟B之後，所述步驟C之前，還包括：Preferably, the fluid dielectric selected according to the predetermined dielectric constant of the insertion ring includes at least two types. After the step B, before the step C, the method further includes:
步驟D、根據所述***環的預定介電常數以及不同種類的流體介電質的介電常數，確定不同種類的流體介電質的體積比例；Step D: determining a volume ratio of different kinds of fluid dielectrics according to a predetermined dielectric constant of the insertion ring and a dielectric constant of a different type of fluid dielectric;
所述步驟C具體為：按照確定的不同種類的流體介電質的體積比例向所述中空腔體內通入選取的流體介電質。The step C is specifically: introducing a selected fluid dielectric into the hollow cavity according to a determined volume ratio of different kinds of fluid dielectrics.
較佳地，不同種類的流體介電質之間不相容。Preferably, different types of fluid dielectrics are incompatible.
較佳地，流體介電質的介電常數隨著溫度的變化而變化。Preferably, the dielectric constant of the fluid dielectric changes with temperature.
較佳地，流體介電質為純水。Preferably, the fluid dielectric is pure water.
較佳地，流體介電質為化學性能穩定的液體介電質或氣體介電質。Preferably, the fluid dielectric is a liquid dielectric or gas dielectric that is chemically stable.
較佳地，液體介電質包括水、乙醇或全氟聚醚。Preferably, the liquid dielectric comprises water, ethanol or perfluoropolyether.
較佳地，氣體介電質包括空氣或惰性氣體。Preferably, the gaseous dielectric comprises air or an inert gas.
相較於習知技術，本發明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本發明提供的靜電夾盤外圍的***環的介電常數的調整方法，根據***環的預定介電常數選取與之相對應的流體介電質，然後將該流體介電質通入到***環的中空腔體內。因此，本發明藉由改變通入到***環中空腔體內的流體介電質的種類使得***環的介電常數達到預定介電常數的目的。由於不同種類的流體介電質其介電常數可以相差很大，因此，藉由選取不同種類的流體介電質可以實現***環介電常數的大幅度調整；另外，一旦流體介電質確定，其介電常數確定，所以填充有該流體介電質的***環的介電常數也非常精確地確定出來，所以，藉由本發明提供的調整方法，可以實現***環介電常數的精確調整。The method for adjusting the dielectric constant of the insertion ring around the electrostatic chuck provided by the present invention selects a corresponding fluid dielectric according to a predetermined dielectric constant of the insertion ring, and then passes the fluid dielectric to the insertion ring. The cavity in the body. Accordingly, the present invention achieves the purpose of achieving a predetermined dielectric constant by varying the dielectric constant of the interposer by varying the type of fluid dielectric that is introduced into the cavity in the interposer. Since the dielectric constants of different kinds of fluid dielectrics can vary greatly, the dielectric constant of the interposer can be greatly adjusted by selecting different kinds of fluid dielectrics. In addition, once the fluid dielectric is determined, Since the dielectric constant is determined, the dielectric constant of the insertion ring filled with the fluid dielectric is also very accurately determined, so that the adjustment of the dielectric constant of the insertion ring can be achieved by the adjustment method provided by the present invention.
由於待加工晶圓邊緣表面上方的電漿密度及其分佈與***環的介電常數有關，由於本發明的調整方法能夠使得***環的介電常數精確地達到預定介電常數，因此，藉由本發明的調整方法可以將待加工晶圓邊緣表面上方的電漿密度及其分佈精確地調整到目標電漿密度及其分佈。因此，藉由本發明的方法可以提高待加工晶圓的加工質量，提高器件的生產良率。Since the plasma density and its distribution above the edge surface of the wafer to be processed are related to the dielectric constant of the insertion ring, since the adjustment method of the present invention enables the dielectric constant of the insertion ring to accurately reach a predetermined dielectric constant, The adjustment method of the invention can precisely adjust the plasma density and its distribution above the edge surface of the wafer to be processed to the target plasma density and its distribution. Therefore, the method of the present invention can improve the processing quality of the wafer to be processed and improve the production yield of the device.
為使本發明的目的、效果以及技術方案更加清楚完整，下面結合附圖對本發明的具體實施方式進行描述。In order to make the objects, effects and technical solutions of the present invention more clear and complete, the specific embodiments of the present invention are described below with reference to the accompanying drawings.
為了清楚地理解本發明提供的調整方法的應用場景，首先介紹下電漿加工設備腔體內的加工處理過程。In order to clearly understand the application scenario of the adjustment method provided by the present invention, the processing process in the cavity of the plasma processing equipment is first introduced.
圖1是電容耦合放電電漿加工設備的具體結構示意圖。如圖1所示，電容耦合放電電漿加工設備包括腔體1、位於腔體內部的靜電夾盤2、位於靜電夾盤2外圍的***環3以及移動環5、約束環6、蓬蓬頭7、在***環3的外側更包括聚焦環8。***環3用於實現靜電夾盤2與地的隔離。1 is a schematic view showing the specific structure of a capacitively coupled discharge plasma processing apparatus. As shown in FIG. 1, the capacitively coupled discharge plasma processing apparatus comprises a cavity 1, an electrostatic chuck 2 located inside the cavity, an insertion ring 3 located at the periphery of the electrostatic chuck 2, and a moving ring 5, a confinement ring 6, and a bulb head. 7. The focus ring 8 is further included on the outer side of the insertion ring 3. The insertion ring 3 is used to achieve isolation of the electrostatic chuck 2 from the ground.
在本發明實施例中，***環3為中空腔體結構，其包括中空腔體31和填充在中空腔體31內部的預定介電材料32。該中空腔體31的材料為固體絕緣材料。In the embodiment of the invention, the insert ring 3 is a hollow cavity structure comprising a hollow cavity body 31 and a predetermined dielectric material 32 filled inside the hollow cavity body 31. The material of the hollow cavity 31 is a solid insulating material.
在進行電漿加工過程中，待加工晶圓4放置在靜電夾盤2上，腔體外部的射頻源產生的射頻功率P0經過下電極（圖1中未繪示，位於靜電夾盤2的底部）輸入到反應腔體1內。輸入的射頻功率P0藉由靜電夾盤2以及***環3進行耦合，從而耦合成藉由靜電夾盤2耦合的射頻功率PC和藉由***環3耦合的射頻功率PE。利用該耦合的功率PC、PE會影響反應腔體內部的電漿密度及其分佈，從而會對待加工晶圓的處理效果產生影響。During the plasma processing, the wafer 4 to be processed is placed on the electrostatic chuck 2, and the RF power P0 generated by the RF source outside the cavity passes through the lower electrode (not shown in FIG. 1 and is located at the bottom of the electrostatic chuck 2). ) is input into the reaction chamber 1 . The input RF power P0 is coupled by the electrostatic chuck 2 and the insertion ring 3 to be coupled to the RF power PC coupled by the electrostatic chuck 2 and the RF power PE coupled by the insertion ring 3. By using the coupled power PC, PE affects the plasma density and distribution inside the reaction chamber, which will affect the processing effect of the processed wafer.
通常情況下，利用電漿進行加工處理時，由於電漿加工設備的腔體結構的限制，待加工晶圓的邊緣性能不甚理想，所以，為了提高處理後的待加工晶圓的邊緣性能，需要對位於晶圓邊緣表面上方的電漿密度及電漿鞘層分佈進行控制。In general, when processing with plasma, the edge performance of the wafer to be processed is not ideal due to the limitation of the cavity structure of the plasma processing equipment. Therefore, in order to improve the edge performance of the processed wafer to be processed, It is desirable to control the plasma density and plasma sheath distribution above the edge surface of the wafer.
由於晶圓邊緣表面上方的電漿密度及電漿鞘層分佈情況與晶圓邊緣上方的射頻功率（即電場分佈）有關。所以，要實現對位於晶圓邊緣表面上方的電漿密度及電漿鞘層分佈進行控制，必須控制晶圓邊緣上方的射頻功率。The plasma density above the edge surface of the wafer and the distribution of the plasma sheath are related to the RF power (ie, the electric field distribution) above the edge of the wafer. Therefore, to control the plasma density and plasma sheath distribution above the edge surface of the wafer, the RF power above the edge of the wafer must be controlled.
由於在加工過程中，晶圓放置在靜電夾盤上，所以晶圓邊緣與靜電夾盤的邊緣靠近，所以，晶圓邊緣上方的射頻功率與藉由***環耦合的射頻功率有關，所以，為了控制調整晶圓邊緣上方的射頻功率需要控制調整藉由***環耦合的射頻功率。Since the wafer is placed on the electrostatic chuck during processing, the edge of the wafer is close to the edge of the electrostatic chuck, so the RF power above the edge of the wafer is related to the RF power coupled through the insertion ring, so Controlling the adjustment of the RF power above the edge of the wafer requires control of the RF power coupled by the insertion loop.
本發明的發明人研究發現，位於靜電夾盤外圍的***環的介電性能影響藉由***環耦合的功率。也就是說，藉由***環耦合的功率依賴於***環的介電性能。所以，要實現藉由***環耦合的功率的控制調整，就必須使得***環的介電性能可以控制調整。The inventors of the present invention have found that the dielectric properties of the interposer ring located at the periphery of the electrostatic chuck affect the power coupled by the insertion ring. That is, the power coupled by the insertion ring depends on the dielectric properties of the insertion ring. Therefore, to achieve control adjustment of the power coupled by the insertion loop, it is necessary to control the dielectric properties of the insertion ring.
不同電漿加工製程過程，所需的電漿密度及其分佈有著很大的差別，因此，不同加工過程所需的***環的介電常數差別很大。然而，習知技術中調整***環的介電常數的方法無法實現介電常數的大幅度調整。並且，習知技術也無法實現對介電常數的精確調整。Different plasma processing processes require a large difference in plasma density and distribution. Therefore, the dielectric constants of the insert rings required for different processing processes vary widely. However, the method of adjusting the dielectric constant of the insertion ring in the prior art cannot achieve a large adjustment of the dielectric constant. Moreover, conventional techniques cannot achieve precise adjustment of the dielectric constant.
為了實現介電常數大幅度的調整，並且實現對介電常數的精確調整，本發明提供了一種靜電夾盤外圍的***環的介電常數的調整方法。In order to achieve a large adjustment of the dielectric constant and to achieve precise adjustment of the dielectric constant, the present invention provides a method of adjusting the dielectric constant of the insertion ring around the electrostatic chuck.
圖2是本發明實施例提供的一種靜電夾盤外圍的***環的介電常數的調整方法的流程示意圖。如圖2所示，該調整方法包括以下步驟：2 is a schematic flow chart of a method for adjusting a dielectric constant of an insertion ring around an electrostatic chuck according to an embodiment of the present invention. As shown in FIG. 2, the adjustment method includes the following steps:
步驟S201、獲取***環的預定介電常數；預定介電常數由反應腔體內待加工晶圓上方的電漿密度及其分佈確定。Step S201: Obtain a predetermined dielectric constant of the insertion ring; the predetermined dielectric constant is determined by a plasma density and a distribution thereof above the wafer to be processed in the reaction chamber.
具體而言，根據電漿加工製程條件，確定待加工晶圓上方的電漿密度及其分佈，根據該待加工晶圓上方的電漿密度及其分佈確定出***環的預定介電常數。最後，獲取***環的預定介電常數。Specifically, according to the plasma processing process conditions, the plasma density and distribution thereof above the wafer to be processed are determined, and the predetermined dielectric constant of the insertion ring is determined according to the plasma density and distribution thereof above the wafer to be processed. Finally, the predetermined dielectric constant of the insertion ring is obtained.
步驟S202、根據***環的預定介電常數，選取與預定介電常數相對應的流體介電質。Step S202: Select a fluid dielectric corresponding to a predetermined dielectric constant according to a predetermined dielectric constant of the insertion ring.
由於不同種類的流體介電質，其介電常數不同，所以，根據上述步驟獲取到的***環的預定介電常數，選取與預定介電常數相對應的流體介電質。Since different dielectric fluids have different dielectric constants, the fluid dielectric corresponding to the predetermined dielectric constant is selected according to the predetermined dielectric constant of the insertion ring obtained in the above step.
步驟S203、向所述中空腔體內通入選取的流體介電質。Step S203, introducing a selected fluid dielectric into the hollow cavity.
向***環的中空腔體內通入選取的流體介電質。進一步地，流體介電質可以填充滿中空腔體。The selected fluid dielectric is introduced into the hollow cavity of the insertion ring. Further, the fluid dielectric can fill the full hollow body.
當***環內填充有流體介電質時，該***環就包括中空腔體和填充在其內的流體介電質。因此，填充在中空腔體內部的流體介電質就會影響***環的介電常數。因此，將根據***環的預定介電常數選取的流體介電質通入到***環的中空腔體後，***環的介電常數就可以達到預定介電常數。因此，藉由本發明的調整方法可以使得***環的介電常數達到預定要求。When the insertion ring is filled with a fluid dielectric, the insertion ring includes a hollow cavity and a fluid dielectric filled therein. Therefore, the fluid dielectric filled inside the hollow cavity affects the dielectric constant of the insertion ring. Therefore, after the fluid dielectric selected according to the predetermined dielectric constant of the insertion ring is introduced into the hollow cavity of the insertion ring, the dielectric constant of the insertion ring can reach a predetermined dielectric constant. Therefore, the dielectric constant of the insertion ring can be made predetermined by the adjustment method of the present invention.
由於不同種類的流體介電質其介電常數可以相差很大，因此，藉由選取不同種類的流體介電質可以實現***環介電常數的大幅度變化，另外，一旦流體介電質確定，其介電常數確定，所以填充有該流體介電質的***環的介電常數也非常精確地確定出來，所以，藉由本發明提供的調整方法，可以實現***環介電常數的精確調整。Since the dielectric constants of different kinds of fluid dielectrics can vary greatly, a large change in the dielectric constant of the interposer can be achieved by selecting different kinds of fluid dielectrics. In addition, once the fluid dielectric is determined, Since the dielectric constant is determined, the dielectric constant of the insertion ring filled with the fluid dielectric is also very accurately determined, so that the adjustment of the dielectric constant of the insertion ring can be achieved by the adjustment method provided by the present invention.
進一步地，由於待加工晶圓邊緣表面上方的電漿密度及其分佈與***環的介電常數有關，由於本發明的調整方法能夠使得***環的介電常數精確地達到預定介電常數，因此，藉由本發明的調整方法可以將待加工晶圓邊緣表面上方的電漿密度及其分佈精確地調整到目標電漿密度及其分佈。因此，藉由本發明的調整方法可以提高待加工晶圓的加工質量，提高元件的生產良率。Further, since the plasma density and its distribution above the edge surface of the wafer to be processed are related to the dielectric constant of the insertion ring, since the adjustment method of the present invention enables the dielectric constant of the insertion ring to accurately reach a predetermined dielectric constant, By means of the adjustment method of the invention, the plasma density and its distribution above the edge surface of the wafer to be processed can be precisely adjusted to the target plasma density and its distribution. Therefore, by the adjustment method of the present invention, the processing quality of the wafer to be processed can be improved, and the production yield of the component can be improved.
進一步而言，上述根據***環的預定介電常數，選取的與預定介電常數相對應的流體介電質可以為一種，也可以為多種。尤其當目前手頭沒有與預定介電常數相對應的流體介電質時，可以藉由多種流體介電質按照不同的比例進行配置得到與預定介電常數相對應的流體介電質。Further, the fluid medium selected according to the predetermined dielectric constant of the insertion ring may correspond to a predetermined dielectric constant, or may be plural. In particular, when there is currently no fluid dielectric corresponding to a predetermined dielectric constant, the fluid dielectric corresponding to the predetermined dielectric constant can be obtained by disposing a plurality of fluid dielectrics in different ratios.
當選取的流體介電質為多種時，如圖3所示，其為本發明之靜電夾盤外圍的***環的介電常數的調整方法的流程示意圖，該調整方法包括以下步驟：When the selected fluid dielectrics are various, as shown in FIG. 3, it is a schematic flow chart of a method for adjusting the dielectric constant of the insertion ring around the electrostatic chuck of the present invention, and the adjustment method includes the following steps:
步驟S301、獲取***環的預定介電常數；預定介電常數由反應腔體內待加工晶圓上方的電漿密度及其分佈確定。Step S301: Obtain a predetermined dielectric constant of the insertion ring; the predetermined dielectric constant is determined by a plasma density and a distribution thereof above the wafer to be processed in the reaction chamber.
該步驟S301與上述實施例所述的步驟S201相同，為了簡要起見，在此不再詳細描述。具體請參照步驟S201的描述。This step S301 is the same as step S201 described in the above embodiment, and will not be described in detail herein for the sake of brevity. For details, please refer to the description of step S201.
步驟S302、根據預定介電常數，選取與預定介電常數相對應的多種流體介電質。Step S302, selecting a plurality of fluid dielectrics corresponding to a predetermined dielectric constant according to a predetermined dielectric constant.
當習知的流體介電質中，其介電常數沒有與預定介電常數相對應的流體介電質時，從習知的流體介電質中選取多種流體介電質。選取的這些流體介電質中，其中一部分流體介電質的介電常數大於預定介電常數，另外一部分流體介電質的介電常數小於預定介電常數，因此藉由將這些不同種類的流體介電質按照不同比例配置，能夠得到具有預定介電常數的流體介電質混合物。In conventional fluid dielectrics, where a dielectric constant does not have a fluid dielectric corresponding to a predetermined dielectric constant, a plurality of fluid dielectrics are selected from conventional fluid dielectrics. Among the selected fluid dielectrics, a part of the fluid dielectric has a dielectric constant greater than a predetermined dielectric constant, and another portion of the dielectric dielectric has a dielectric constant less than a predetermined dielectric constant, so by using these different kinds of fluids The dielectric is configured in different proportions to obtain a fluid dielectric mixture having a predetermined dielectric constant.
步驟S303、根據***環的預定介電常數以及不同種類的流體介電質的介電常數，確定不同種類的流體介電質的體積比例。Step S303, determining a volume ratio of different kinds of fluid dielectrics according to a predetermined dielectric constant of the insertion ring and a dielectric constant of a different type of fluid dielectric.
根據***環的預定介電常數以及不同種類的流體介電質的介電常數，確定這些不同種類的流體介電質配置成具有預定介電常數的流體介電質時的體積比例。The volume ratio of these different kinds of fluid dielectrics to fluid dielectrics having a predetermined dielectric constant is determined based on the predetermined dielectric constant of the interposer and the dielectric constant of the different types of fluid dielectrics.
S304、按照確定的不同種類的流體介電質的體積比例向中空腔體內通入選取的流體介電質。S304. Pass the selected fluid dielectric into the hollow cavity according to the determined volume ratio of the different types of fluid dielectric.
藉由圖3所示的***環介電常數的調整方法可以將***環的介電常數精准地調整到目標值即預定介電常數。The dielectric constant of the insertion ring can be precisely adjusted to a target value, that is, a predetermined dielectric constant, by the adjustment method of the insertion ring dielectric constant shown in FIG.
當選取多種不同的流體介電質配置填充在中空腔體內的流體介電質時，為了能夠使得流體介電質重複循環使用，較佳地，選取的這些不同種類的流體介電質之間的相容性很差，彼此不相容。例如，當包括兩種流體介電質時，一種流體介電質為水溶性的，另外一種流體介電質為油溶性的，這樣，各種流體介電質在中空腔體內彼此分層。當需要將這些流體介電質從中空腔體內排出時，可以依次排出不同的流體介電質。分別用不同的容器收集不同的流體介電質，以方便後續重複循環利用這些流體介電質。When a plurality of different fluid dielectrics are selected to fill the fluid dielectric in the hollow cavity, in order to enable repeated recycling of the fluid dielectric, preferably between the different types of fluid dielectrics selected Poor compatibility and incompatibility with each other. For example, when two fluid dielectrics are included, one fluid dielectric is water soluble and the other fluid dielectric is oil soluble such that various fluid dielectrics stratify one another within the hollow cavity. When it is desired to discharge these fluid dielectrics from the hollow cavity, different fluid dielectrics can be sequentially discharged. Different fluid dielectrics are collected in separate containers to facilitate subsequent recycling of these fluid dielectrics.
為了實現這種調節控制方式，在***環的中空腔體上較佳設置有至少一個用於填充和排出流體介電質的開口。該開口可以為能夠控制打開和關閉的閥門。在向中空腔體內通入流體介電質或者將流體介電質從中空腔體內排出時，該開口連接一個管道，這樣流體介電質藉由該開口填充到中空腔體內或者從中空腔體內排出。In order to achieve this type of adjustment control, at least one opening for filling and discharging the fluid dielectric is preferably provided on the hollow body of the insertion ring. The opening can be a valve that can control opening and closing. When a fluid dielectric is introduced into the hollow cavity or the fluid dielectric is discharged from the hollow cavity, the opening is connected to a pipe such that the fluid dielectric is filled into or discharged from the hollow cavity through the opening. .
另外，進一步地，由於不同種類的流體介電質位於不同層，所以，較佳在***環的中空腔體的不同高度處設置複數個開口，以實現更加方便地將流體介電質排出和分離。In addition, further, since different kinds of fluid dielectrics are located in different layers, it is preferable to provide a plurality of openings at different heights of the hollow cavity of the insertion ring to realize more convenient discharge and separation of the fluid dielectric. .
在本發明實施例中，流體介電質可以為化學性能穩定的液體介電質，也可以為氣體介電質。In the embodiment of the present invention, the fluid dielectric may be a liquid dielectric having stable chemical properties or a gas dielectric.
其中，液體介電質可以為純水、乙醇或全氟聚醚等通用的穩定液態物質。上述的各種液體介電質的介電常數如表1所示。 表1
氣體介電質可以包括空氣或惰性氣體，其中，惰性氣體可以為氮氣、氬氣或氦氣等等。當空腔內的介電質為氣體時，其介電常數接近於1，並且隨中空腔體內氣壓不同而有所變化。The gaseous dielectric may include air or an inert gas, wherein the inert gas may be nitrogen, argon or helium or the like. When the dielectric in the cavity is a gas, its dielectric constant is close to 1, and varies with the pressure in the cavity.
進一步地，為了更加靈活地調整***環的介電常數，較佳，通入到中空腔體內的流體介電質的介電常數隨著溫度的變化而變化。這樣，不僅可以根據流體介電質的種類調整***環的介電常數，也可以藉由控制***環的溫度調整***環的介電常數。由於純水的介電常數隨著溫度的不同而發生變化，所以，填充在中空腔體內的流體介電質可以為純水。Further, in order to more flexibly adjust the dielectric constant of the insertion ring, it is preferred that the dielectric constant of the fluid dielectric that is introduced into the hollow cavity changes with temperature. Thus, not only the dielectric constant of the insertion ring can be adjusted depending on the type of the fluid dielectric, but also the dielectric constant of the insertion ring can be adjusted by controlling the temperature of the insertion ring. Since the dielectric constant of pure water varies with temperature, the fluid dielectric filled in the hollow cavity may be pure water.
在不同溫度下對應的水的介電常數如下表所示： 表2：
當採用介電常數隨溫度變化的介電材料時，可以根據製程條件以及待處理晶圓的目標性能確定出晶圓邊緣的電漿密度及電漿鞘層分佈。根據確定出的電漿密度及電漿鞘層分佈確定***環的介電常數，根據確定出的***環的介電常數以及介電材料的介電常數與溫度的關係確定***環的溫度，藉由溫度控制器（圖1中未繪示出）使得***環的溫度達到前述確定出的溫度，從而達到控制調節***環的介電常數的目的。When a dielectric material whose dielectric constant changes with temperature is used, the plasma density at the edge of the wafer and the distribution of the plasma sheath can be determined according to the process conditions and the target properties of the wafer to be processed. Determining the dielectric constant of the insertion ring according to the determined plasma density and the distribution of the plasma sheath, and determining the temperature of the insertion ring according to the determined dielectric constant of the insertion ring and the dielectric constant of the dielectric material and temperature. The temperature of the insertion ring is brought to the previously determined temperature by a temperature controller (not shown in Fig. 1) to achieve the purpose of controlling the dielectric constant of the adjustment insertion ring.
當處理製程所需要的藉由***環耦合的射頻功率發生變化時，改變***環的溫度，進而改變***環的介電常數，從而達到改變待加工晶圓邊緣上方的電漿密度和電漿鞘層分佈的目的。When the RF power coupled by the insertion ring is changed by the processing process, the temperature of the insertion ring is changed, thereby changing the dielectric constant of the insertion ring, thereby changing the plasma density and the plasma sheath above the edge of the wafer to be processed. The purpose of the layer distribution.
需要說明的是，該***環介電常數的調整可以發生在同一個製程過程中，也可以發生在不同製程過程中。It should be noted that the adjustment of the dielectric constant of the insertion ring may occur in the same process, or may occur in different process processes.
以上為本發明實施例提供的靜電夾盤外圍的***環的介電常數的調整方法的具體實施方式。在該調整方法中，其***環的介電常數根據填充在其中空腔體內的流體介質的種類可以調整到預定介電常數，進而可以實現調整待加工晶圓邊緣表面上方的電漿密度以及電漿鞘層分佈，進而能夠提高待加工晶圓的加工質量，提高器件的生產良率。The above is a specific implementation manner of a method for adjusting the dielectric constant of the insertion ring around the electrostatic chuck provided by the embodiment of the present invention. In the adjustment method, the dielectric constant of the insertion ring can be adjusted to a predetermined dielectric constant according to the kind of the fluid medium filled in the cavity, thereby adjusting the plasma density and the electricity above the edge surface of the wafer to be processed. The distribution of the sheath and sheath can further improve the processing quality of the wafer to be processed and improve the production yield of the device.
當電漿加工設備為電漿刻蝕機時，晶圓邊緣表面上方的電漿密度以及電漿鞘層分佈可以精確調整，能夠使得晶圓表面上方的電漿密度分佈一致，因此可以提高晶圓整個表面刻蝕的均勻性，提高晶圓的生產良率。When the plasma processing equipment is a plasma etching machine, the plasma density above the edge surface of the wafer and the distribution of the plasma sheath can be precisely adjusted, so that the plasma density distribution above the wafer surface is uniform, thereby improving the wafer. The uniformity of the entire surface etch improves the yield of the wafer.
以上所述僅是本發明的較佳實施方式，應當指出，對於本發明所屬技術領域中具有通常知識者來說，在不脫離本發明原理的前提下，還可以做出複數種改進和潤飾，這些改進和潤飾也應視為本發明的保護範圍。The above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art to which the present invention pertains can make various improvements and modifications without departing from the principles of the invention. These improvements and finishes should also be considered as protection of the present invention.
1‧‧‧反應腔體
2‧‧‧靜電夾盤
3‧‧‧***環
31‧‧‧中空腔體
32‧‧‧預定介電材料
4‧‧‧待加工晶圓
5‧‧‧移動環
6‧‧‧約束環
7‧‧‧蓬蓬頭
8‧‧‧聚焦環
P0‧‧‧射頻功率
PC、PE‧‧‧射頻功率
RF‧‧‧射頻功率源
S201~203、S301~S304‧‧‧步驟1‧‧‧Reaction chamber
2‧‧‧Electrical chuck
3‧‧‧insert ring
31‧‧‧ hollow body
32‧‧‧Predetermined dielectric materials
4‧‧‧Processed wafers
5‧‧‧ moving ring
6‧‧‧Constrained ring
7‧‧‧Puffing head
8‧‧‧ Focus ring
P0‧‧‧RF power
PC, PE‧‧‧RF power
RF‧‧‧RF power source
S201~203, S301~S304‧‧‧ steps
為了清楚地理解本發明的技術方案，下面結合圖式對描述本發明的具體實施方式時用到的圖式作一簡要說明。顯而易見地，這些圖式僅是本發明實施例的部分圖式，本發明所屬技術領域中具有通常知識者在不付出進步性勞動的前提下，還可以獲得其它的圖式。 圖1是電容耦合放電電漿加工設備的腔體的結構示意圖； 圖2是本發明實施例提供的一種靜電夾盤外圍的***環的介電常數的調整方法的流程示意圖； 圖3是本發明實施例提供的另外一種靜電夾盤外圍的***環的介電常數的調整方法的流程示意圖。In order to clearly understand the technical solutions of the present invention, a brief description of the drawings used in describing the specific embodiments of the present invention will be briefly described below. Obviously, these drawings are only partial drawings of the embodiments of the present invention, and those having ordinary knowledge in the technical field of the present invention can obtain other drawings without paying progressive labor. 1 is a schematic structural view of a cavity of a capacitively coupled discharge plasma processing apparatus; FIG. 2 is a schematic flow chart of a method for adjusting a dielectric constant of an insertion ring around an electrostatic chuck according to an embodiment of the present invention; A schematic flow chart of a method for adjusting the dielectric constant of the insertion ring around the periphery of another electrostatic chuck provided by the embodiment.
S201~S203‧‧‧步驟 S201~S203‧‧‧Steps
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| JP5294669B2 (en) * | 2008-03-25 | 2013-09-18 | 東京エレクトロン株式会社 | Plasma processing equipment |
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