TWI577791B - 合金材料用洗淨劑及合金材料之製造方法 - Google Patents
合金材料用洗淨劑及合金材料之製造方法 Download PDFInfo
- Publication number
- TWI577791B TWI577791B TW102114600A TW102114600A TWI577791B TW I577791 B TWI577791 B TW I577791B TW 102114600 A TW102114600 A TW 102114600A TW 102114600 A TW102114600 A TW 102114600A TW I577791 B TWI577791 B TW I577791B
- Authority
- TW
- Taiwan
- Prior art keywords
- alloy material
- detergent
- acid
- alloy
- polishing
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title claims description 252
- 238000005406 washing Methods 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000003599 detergent Substances 0.000 claims description 95
- 238000005498 polishing Methods 0.000 claims description 72
- 239000000203 mixture Substances 0.000 claims description 44
- 239000003945 anionic surfactant Substances 0.000 claims description 30
- 238000004140 cleaning Methods 0.000 claims description 28
- 239000002253 acid Substances 0.000 claims description 17
- 238000001035 drying Methods 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 3
- 239000006199 nebulizer Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
- 230000007797 corrosion Effects 0.000 description 24
- 238000005260 corrosion Methods 0.000 description 24
- 229910000420 cerium oxide Inorganic materials 0.000 description 16
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 16
- 239000006061 abrasive grain Substances 0.000 description 14
- -1 methyl taurine compound Chemical class 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 13
- 238000000227 grinding Methods 0.000 description 13
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 230000005764 inhibitory process Effects 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 150000007524 organic acids Chemical class 0.000 description 5
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 239000002518 antifoaming agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002738 chelating agent Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 150000002391 heterocyclic compounds Chemical class 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 239000002736 nonionic surfactant Substances 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 2
- IHCCAYCGZOLTEU-UHFFFAOYSA-N 3-furoic acid Chemical compound OC(=O)C=1C=COC=1 IHCCAYCGZOLTEU-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- CHTHALBTIRVDBM-UHFFFAOYSA-N furan-2,5-dicarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)O1 CHTHALBTIRVDBM-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 125000005702 oxyalkylene group Chemical group 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 230000003449 preventive effect Effects 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- BAERPNBPLZWCES-UHFFFAOYSA-N (2-hydroxy-1-phosphonoethyl)phosphonic acid Chemical compound OCC(P(O)(O)=O)P(O)(O)=O BAERPNBPLZWCES-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- OXQGTIUCKGYOAA-UHFFFAOYSA-N 2-Ethylbutanoic acid Chemical compound CCC(CC)C(O)=O OXQGTIUCKGYOAA-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 1
- MLMQPDHYNJCQAO-UHFFFAOYSA-N 3,3-dimethylbutyric acid Chemical compound CC(C)(C)CC(O)=O MLMQPDHYNJCQAO-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- DIWVBIXQCNRCFE-UHFFFAOYSA-N DL-alpha-Methoxyphenylacetic acid Chemical compound COC(C(O)=O)C1=CC=CC=C1 DIWVBIXQCNRCFE-UHFFFAOYSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- LONQTZORWVBHMK-UHFFFAOYSA-N [N].NN Chemical compound [N].NN LONQTZORWVBHMK-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- OKWFWLQRTYKJRW-UHFFFAOYSA-N butane-1,1,1-tricarboxylic acid;phosphane Chemical compound P.CCCC(C(O)=O)(C(O)=O)C(O)=O OKWFWLQRTYKJRW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- TVZISJTYELEYPI-UHFFFAOYSA-N hypodiphosphoric acid Chemical compound OP(O)(=O)P(O)(O)=O TVZISJTYELEYPI-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 235000010446 mineral oil Nutrition 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- UJJLJRQIPMGXEZ-UHFFFAOYSA-N tetrahydro-2-furoic acid Chemical compound OC(=O)C1CCCO1 UJJLJRQIPMGXEZ-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/14—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
- C11D1/143—Sulfonic acid esters
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
- C11D1/22—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds
- C11D1/24—Sulfonic acids or sulfuric acid esters; Salts thereof derived from aromatic compounds containing ester or ether groups directly attached to the nucleus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
- C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/08—Iron or steel
- C23G1/088—Iron or steel solutions containing organic acids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/24—Cleaning or pickling metallic material with solutions or molten salts with neutral solutions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/16—Metals
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Detergent Compositions (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
本發明係關於合金材料用洗淨劑及合金材料之製造方法。
合金材料由於具有比純金屬材料更優異之機械強度、耐藥品性、耐腐蝕性或耐熱性等之優點,故已使用於各種用途中。對於合金材料施以例如研磨等之加工(參照專利文獻1、2)。適用於要求清潔性之用途中之合金材料係使用洗淨液進行洗淨。
[專利文獻1]特開平01-246068號公報
[專利文獻2]特開平11-010492號公報
合金材料所適用之合金材料用洗淨劑,就去除附著於
合金材料表面之異物及抑制合金材料表面腐蝕之觀點而言,尚有改善餘地。例如,合金材料用洗淨劑中,若提高去除附著於合金材料表面之異物之性能,則有容易腐蝕合金材料表面之虞。
本發明之目的係提供一種可獲得合金材料表面之高清淨性,同時可抑制起因於合金材料表面腐蝕造成之品質下降之合金材料用洗淨劑及合金材料之製造方法。
為達成上述目的,本發明之一樣態為提供一種合金材料用洗淨劑,其為含有具有SO3M基(但,M係表示相對離子)之陰離子性界面活性劑,而且具有1.5且以上4以下之範圍的pH。
合金材料用洗淨劑較好進而含有有機酸。
另外,本發明之另一樣態係提供一種合金材料之製造方法,其係包含使用如上述之合金材料用洗淨劑洗淨合金材料之洗淨步驟。
前述洗淨步驟中前述合金材料用洗淨劑之溫度較好為60℃以下。
合金材料之製造方法較好進而具備在前述洗淨步驟之前實施之研磨步驟,前述研磨步驟係使用研磨用組成物研磨合金材料。
前述洗淨步驟係在使前述研磨步驟後附著於合金材料上之前述研磨用組成物乾燥之前,使前述合金材料與前述
合金材料用洗淨劑接觸。
依據本發明,可獲得合金材料表面之高清淨性,同時抑制起因於合金材料表面之腐蝕造成之品質下降。
以下,說明本發明之一實施形態。
合金材料用洗淨劑含有陰離子性界面活性劑,同時具有1.5以上4以下範圍之pH。本實施形態之合金材料用洗淨劑所適用之合金材料表面之至少一部分係由使用研磨用組成物研磨而成之鏡面構成。
合金材料用洗淨劑中所用之陰離子性界面活性劑具有SO3M基(但,M表示相對離子)。以下,只要沒有特別指明,則“陰離子性界面活性劑”用語係表示具有SO3M基之陰離子性界面活性劑。
陰離子性界面活性劑之具體例列舉為例如烷基磺酸系化合物、烷基苯磺酸系化合物、烷基萘磺酸系化合物、甲基牛磺酸系化合物、烷基二苯基醚二磺酸系化合物、α-烯烴磺酸系化合物、萘磺酸縮合物、磺基琥珀酸二酯系化合物等。陰離子性界面活性劑亦可使用側鏈具有SO3M基之聚合物或共聚物等。SO3M基中之以“M”表示之相對離子之具體例列舉為氫離子、鹼金屬離子、銨離子、烷醇胺離子等。鹼金屬離子之具體例列舉為例如鋰離子、鈉離
子、鉀離子等。
陰離子性界面活性劑中,就對合金材料之洗淨性高且腐蝕性低之觀點而言,以烷基苯磺酸或其鹽較佳。烷基苯磺酸中之烷基之碳數較好為8~20,更好為10~15。烷基苯磺酸或其鹽較好使用例如十二烷基苯磺酸或其鹽。
陰離子界面活性劑中,藉由使用SO3M基中之以“M”表示之相對離子為氫離子之磺酸型之陰離子性界面活性劑,可降低合金材料用洗淨劑之pH。因此,容易將合金材料用洗淨劑之pH調整成4以下。
合金材料用洗淨劑中之陰離子性界面活性劑之含量較好為170質量ppm(170mg/kg)以上,更好為300質量ppm(300mg/kg)以上。隨著合金材料用洗淨劑中之陰離子性界面活性劑之含量增加,洗淨性提高。合金材料用洗淨劑中之陰離子界面活性劑之含量較好為15000質量ppm(15000mg/kg)以下,更好為5000質量ppm(5000mg/kg)以下,又更好為2000質量ppm(2000mg/kg)以下。隨著合金材料用洗淨劑中之陰離子性界面活性劑之含量減少,對於合金材料之腐蝕性下降。
合金材料用洗淨劑以例如提高洗淨性或控制起泡為目的,亦可含有上述陰離子性界面活性劑以外之陰離子性界面活性劑、非離子性界面活性劑、水溶性高分子、螯合劑等。上述陰離性界面活性劑以外之陰離子性界面活性劑之具體例列舉為例如聚羧酸系界面活性劑或烷基苯硫酸酯系界面活性劑等。非離子性界面活性劑之具體例列舉為例如
聚氧伸乙基烷基醚、山梨糖醇酐單油酸酯、具有單一種或複數種之氧基伸烷基單位之氧基伸烷基系聚合物等。水溶性高分子之具體例列舉為例如聚乙二醇、聚乙烯醇、聚乙烯基吡咯烷酮、羥基乙基纖維素等。螯合劑之具體例列舉為例如胺、胺基酸、有機膦酸(phosphonic acid)、酚衍生物、聚胺基膦酸、1,3-二酮等。
合金材料用洗淨劑,就抑制合金材料腐蝕之觀點而言,亦可含有防腐蝕劑。防腐蝕劑並無特別限制,較好為雜環式化合物。雜環式化合物中之雜環之員數並無特別限制。另外,雜環式化合物可為單環化合物,亦可為具有縮合環之多環化合物。
合金材料用洗淨劑,就例如抑制因陰離子性界面活性劑產生之發泡之觀點而言,亦可含有消泡劑。消泡劑之具體例列舉為例如矽氧油系消泡劑、礦物油系消泡劑等。
合金材料用洗淨劑應用於使用含有膠體二氧化矽作為研磨粒之研磨用組成物研磨之合金材料時,合金材料用洗淨劑之pH較好為1.6以上3.5以下之範圍內。
合金材料用洗淨劑可含有習知之酸、鹼或鹽作為pH調整劑。酸之具體例列舉為無機酸及有機酸。無機酸之具體例列舉為例如鹽酸、硫酸、硝酸、氫氟酸、硼酸、碳酸、次磷酸(hypophosphoric acid)、亞磷酸、磷酸等。有機酸之具體例列舉為例如甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、正己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、正庚酸、2-甲基己酸、正辛酸、2-乙基
己酸、苯甲酸、乙醇酸、水楊酸、甘油酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸(pimelic acid)、馬來酸、苯二甲酸、蘋果酸、酒石酸、檸檬酸、乳酸、二乙醇酸、2-呋喃羧酸、2,5-呋喃二羧酸、3-呋喃羧酸、2-四氫呋喃羧酸、甲氧基乙酸、甲氧基苯基乙酸、苯氧基乙酸、羥基亞乙基二膦酸、氮川叁(亞甲基膦酸)、膦醯丁烷三羧酸、乙基二胺四(亞甲基膦酸)等。pH調整劑較好為有機酸,更好為由乙醇酸、琥珀酸、馬來酸、檸檬酸、酒石酸、蘋果酸、葡萄糖酸及衣康酸選出之至少一種,最好為檸檬酸。
鹼之具體例列舉為例如胺或氫氧化四級銨等有機鹼、鹼金屬之氫氧化物、鹼土類金屬之氫氧化物、氨等。鹽之具體例列舉為例如酸之銨鹽、酸之鹼金屬鹽等。pH調整劑可單獨使用一種,亦可組合兩種以上使用。例如藉由組合弱酸與強鹼、強酸與弱鹼、或弱酸與弱鹼,而發揮pH之緩衝作用。
合金材料用洗淨劑所適用之合金材料之具體例列舉為鋁合金、鈦合金、鎂合金、不銹鋼、鎳合金、銅合金等。鋁合金較好為如例如日本工業規格(JIS)H4000:2006或ISO 209:1989等所記載之對於鋁含0.1~10質量%之矽、鐵、銅、錳、鎂、鋅、鉻等者。鈦合金較好為如例如JIS H4600:2007等所記載之對於鈦含3.5~30質量%之鋁、鐵、釩等者。不銹鋼較好為如例如JIS G4303:2005等所記載之對於鐵含10~50質量%之鉻、鎳、鉬、錳等者。鎳
合金較好為如例如JIS H4551:2000等所記載之對於鎳含20~75質量%之鐵、鉻、鉬、鈷等者。銅合金較好為如例如JIS H3100:2006所記載之對於銅含3~50質量%之鐵、鉛、鋅、錫等者。本發明之合金材料用洗淨劑主要較好適用於合金材料,但亦可適用於鋁、鈦、鐵、鎳、銅等純金屬材料。
合金材料用洗淨劑含有水作為溶劑或分散介質。較好使用雜質之含量較少的水,例如離子交換水、純水、超純水、蒸餾水等。
合金材料用洗淨劑除上述成分以外,亦可視需要含有防銹劑、可與水相溶之醇等。
接著,針對合金材料之製造方法,與合金材料用洗淨劑之作用一起說明。
合金材料之製造方法包含研磨合金材料之研磨步驟、與洗淨合金材料之洗淨步驟。
研磨步驟係使用研磨用組成物研磨合金材料表面之至少一部分。藉由該研磨步驟,使合金材料表面之至少一部份鏡面化。研磨用組成物含有物理性研磨合金材料表面之研磨粒。研磨粒種類可依據合金材料之種類適當變更。研磨粒之材料列舉為例如氧化矽、氧化鋁、氧化鈰、氧化鋯、氧化鈦、氧化錳、碳化矽、氮化矽等。研磨粒可單獨使用一種,亦可組合兩種以上使用。
研磨粒之平均粒徑在例如5nm~400nm之範圍內。研磨粒之平均粒徑係由以氮吸附法(BET法)獲得之比表面基
之測定值算出。
研磨粒之材料中,就提高研磨速度之觀點而言,較好為氧化矽或氧化鋁,最好為氧化矽。由氧化矽所成之研磨粒(粒子)之具體例列舉為例如膠體二氧化矽、發煙二氧化矽、溶凝膠法二氧化矽等。由氧化矽所成之研磨粒中以膠體二氧化矽較佳。
研磨用組成物之pH係調整成例如1以上且12以下之範圍。研磨用組成物之pH可使用作為合金材料用洗淨劑中之pH調整劑之上述者調整。使用膠體二氧化矽作為研磨粒時,就維持膠體二氧化矽之分散性之觀點而言,研磨用組成物之pH較好調整成8以上且12以下之範圍。又,使用表面修飾膠體二氧化矽時,亦可使研磨用組成物之pH成為酸性區域(例如,0.5以上4.5以下之範圍之pH)。
研磨用組成物可含有化學性研磨合金材料表面之氧化劑。氧化劑之具體例列舉為例如過氧化氫、過乙酸、過碳酸鹽、過氧化脲、過氯酸、過氯酸鹽、過硫酸鹽、過碘酸鹽、過錳酸鹽等。氧化劑中,就研磨速度之觀點而言,以過氧化氫及過硫酸鹽之至少一者較佳。過硫酸鹽之具體例列舉為例如過硫酸鈉、過硫酸鉀、過硫酸銨等。氧化劑中,就在水中之安定性高、且對環境之負荷小而言,最好為過氧化氫。
研磨用組成物含有水作為溶劑或分散介質。較好使用雜質之含量較少之水,例如離子交換水、純水、超純水、蒸餾水等。研磨用組成物亦可視需要含有陰離子性界面活
性劑、非離子性界面活性劑、螯合劑、防銹劑、防腐劑、防霉劑等。
研磨步驟可使用研磨金屬用之研磨裝置。研磨裝置之具體例列舉為單面研磨裝置、雙面研磨裝置等。研磨步驟係一邊將研磨用組成物供給於合金材料表面,一邊將研磨墊壓靠向合金材料表面並旋轉合金材料或研磨墊。此時,藉由研磨墊與合金材料之間、及研磨用組成物與合金材料之間之摩擦,而物理性研磨合金材料。另外,使用含有氧化劑之研磨用組成物或具有使合金材料之表面改質之pH之研磨用組成物時,合金材料亦經化學性研磨。
研磨墊之具體例列舉為例如聚胺基甲酸酯型、不織布型、鞣皮型等研磨墊。研磨墊可含研磨粒,亦可不含研磨粒。研磨墊中,較好使用不含研磨粒之鞣皮型。
洗淨步驟係使用合金材料用洗淨劑洗淨研磨後之合金材料。洗淨步驟包含使合金材料與合金材料用洗淨劑接觸之第1洗淨階段,與自合金材料表面去除合金材料用洗淨劑之第2洗淨階段。第1洗淨階段中,首先在使研磨步驟後附著於合金材料上之研磨用組成物乾燥之前,將合金材料浸漬在合金材料用洗淨劑中。藉此,由於防止合金材料表面之乾燥,故可抑制例如研磨粒等之異物固著於合金材料表面。另外,浸漬於合金材料用洗淨劑之合金材料表面由於以合金材料用洗淨劑予以保護,故抑制了例如與氧化性氣體之接觸。
第1洗淨階段中,接著對浸漬有合金材料之合金材料
用洗淨劑照射超音波。藉由隨著因超音波產生氣泡及破裂之能量而有效去除附著於合金材料之異物。藉由根據合金材料調整超音波之輸出、頻率及照射時間,可不損及合金材料,而提高洗淨效率。一般而言,係照射20kHz~2000kHz頻率之超音波。頻率較好為200kHz~1000kHz。隨著頻率變高,而防止合金材料之損傷。隨著頻率變低,一般洗淨效率會提高。
第1洗淨階段中使用之合金材料用洗淨劑由於含有陰離子性界面活性劑且具有4以下之pH,故可容易地自合金材料之表面去除例如研磨粒等之異物。再者,合金材料用洗淨劑由於具有1.5以上之pH,故容易抑制合金材料表面之腐蝕。
第1洗淨階段亦可在將合金材料靜置在特定位置之狀態下進行,亦可邊移動合金材料邊進行。第1洗淨階段之合金材料用洗淨劑之溫度,就抑制合金材料腐蝕之觀點而言,較好為60℃以下,更好為55℃以下。第1洗淨階段之合金材料用洗淨劑之溫度較好為例如1℃以上,更好為10℃以上,又更好為20℃以上。隨著第1洗淨階段之合金材料用洗淨劑之溫度提高,可提高洗淨效果。
第2洗淨階段中,係將自合金材料用洗淨劑中取出之合金材料浸漬於水中,且藉由照射上述之超音波,使附著於合金材料之合金材料用洗淨劑擴散於水中。藉此,自合金材料表面去除合金材料用洗淨劑。第2洗淨階段中,於合金材料表面殘留未在第1洗淨階段被去除之異物時,該
異物會與合金材料用洗淨劑一起擴散於水中。
第2洗淨階段中使用之水較好為雜質含量較少之水,例如離子交換水、純水、超純水、蒸餾水等。
於洗淨步驟中被洗淨之合金材料經自然乾燥,或藉由吹送乾燥空氣而強制乾燥。合金材料視需要可經成形加工,而用於建材或容器等構造材、汽車、船舶、飛機等輸送設備,以及各種電化製品、電子構件等各種用途中。
依據以上詳述之實施形態,而發揮如下之效果。
(1)合金材料用洗淨劑為含有具有SO3M基之陰離子性界面活性劑,而且具有1.5以上且4以下之範圍的pH。因此,容易去除附著於合金材料表面之異物,同時抑制合金材料表面之腐蝕。因此,提供一種可提高合金材料表面之清淨性,同時可抑制起因於合金材料表面腐蝕造成之品質下降之合金材料用洗淨劑。
(2)合金材料用洗淨劑較好含有有機酸。該情況下,容易調整成上述pH之範圍,同時進一步提高基於其pH之效果。
(3)陰離子性界面活性劑中,較好使用SO3M基中之以“M”表示之相對離子為氫離子之磺酸型陰離子性界面活性劑。該情況下,容易將合金材料用洗淨劑之pH調整成4以下。
(4)合金材料之製造方法包含使用合金材料用洗淨劑洗淨合金材料之洗淨步驟。依據該製造方法,可提高表面之清潔性,同時容易獲得因表面腐蝕造成之缺陷獲得減低
之合金材料。
(5)洗淨步驟中之合金材料用洗淨劑之溫度較好為60℃以下。該情況下,更容易抑制合金材料表面之腐蝕。
(6)洗淨步驟較好在使用研磨用組成物研磨合金材料之研磨步驟之後進行。該情況下,可容易地去除研磨步驟後附著於合金材料上之研磨用組成物。例如,使用含有膠體二氧化矽等之研磨粒之研磨用組成物研磨鋁合金後,藉由使用本實施形態之合金材料用洗淨劑進行洗淨,可容易地將研磨粒等異物沖掉。
(7)洗淨步驟中,較好在使研磨步驟後附著於合金材料上之研磨用組成物乾燥之前,使合金材料與合金材料用洗淨劑接觸。該情況下,自研磨步驟結束後至洗淨步驟開始之間,防止了合金材料表面之乾燥。藉此,抑制了研磨用組成物中之成分固著於合金材料之表面。因此,可更提高合金材料表面之清潔性。另外,與合金材料用洗淨劑接觸之合金材料表面由於以合金材料用洗淨劑予以保護,故抑制了合金材料表面之腐蝕。尤其,合金材料與合金材料用洗淨劑之接觸較好藉由將合金材料浸漬於合金材料用洗淨劑中進行。
(8)利用研磨形成之鏡面比例如藉由電鍍或塗裝形成之鏡面就耐久性優異方面而言較有利。尤其,使用研磨用組成物研磨而形成之鏡面由於平滑性高,故就獲得具有更高精度鏡面之合金材料方面而言較有利。具有如此高精度鏡面之合金材料中,鏡面之清潔性之降低及腐蝕容易被辨
識。因此,應用於具有如此高精度鏡面之合金材料之合金材料用洗淨劑被要求更高之洗淨性及更低之腐蝕性。本實施形態之合金材料用洗淨劑就可邊維持使用研磨用組成物研磨之鏡面之高平滑性,邊提高其鏡面之清潔性方面而言尤其有利。
前述實施形態亦可變更如下。
.第1洗淨階段亦可在將合金材料浸漬於洗淨槽內之合金材料用洗淨劑中之狀態下,藉由使合金材料用洗淨劑循環而進行。第1洗淨階段中,亦可併用合金材料用洗淨劑之循環與前述超音波之照射。
.第1洗淨階段中之超音波照射亦可省略。
.第1洗淨階段中亦可將合金材料用洗淨劑噴霧於合金材料表面,或藉由使合金材料用洗淨劑澆流於合金材料表面,而使合金材料與合金材料用洗淨劑接觸。
.亦可藉前述合金材料用洗淨劑以外之洗淨劑預洗淨合金材料作為第1洗淨階段之前階段。
.第1洗淨階段亦可使研磨步驟後附著於合金材料上之研磨用組成物乾燥後進行。
.第2洗淨階段亦可在使合金材量浸漬於洗淨槽內之水中之狀態,藉由使水循環而進行。第2洗淨階段亦可併用水之循環與前述超音波之照射。
.第2洗淨階段亦可將水噴霧於合金材料之表面或使水澆流於合金材料表面而進行。
.洗淨步驟亦可使用PVA海綿、不織布、尼龍刷等
進行擦拭洗淨。另外,洗淨步驟亦可使用研磨裝置進行。亦即,洗淨步驟亦可邊使合金材料用洗淨劑或水澆流於合金材料上,邊以研磨墊擦拭洗淨合金材料。
.第2洗淨階段所用之水亦可變更為醇等之有機溶劑、水與例如醇等之混合溶劑、或含有防銹劑等成分之液體等。
.第1洗淨階段或第2洗淨階段可重複複數次。
.洗淨步驟中,成為洗淨對象之面可為合金材料表面全體,亦可為合金材料表面之一部分。
.合金材料之形狀並無特別限制。例如合金材料可具有平坦面、凸面或凹面等彎曲面、及包含球面之任意形狀之表面。
.合金材料可在遍及其表面全體具有鏡面,亦可遍及表面之一部分具有鏡面。
.合金材料可為例如板狀且其兩面為鏡面者,亦可為僅一面為鏡面者。
.合金材料用洗淨劑亦可使用於不具有鏡面之合金材料。亦即,成為洗淨對象之合金材料為供於研磨步驟之合金材料,亦可為具有鏡面以外之表面者。再者,成為洗淨對象之合金材料並不限於供於研磨步驟者,亦可為例如以經切硝加工之合金材料作為洗淨對象。即使該情況下,仍可藉由使用前述合金材料用洗淨劑,容易地去除附著於合金材料表面之異物,可抑制因合金材料表面之腐蝕造成之品質降低。
.以前述合金材料用洗淨劑洗淨後之合金材料亦可被施以電鍍或塗裝。但,於具有鏡面之合金材料之情況時,就美感或耐久性之觀點而言,較好為使鏡面露出之狀態。
.前述合金材料用洗淨劑亦可藉由例如以水稀釋合金材料用洗淨劑之原液而調製。
.前述合金材料用洗淨劑可使用一次合金材料之洗淨後,經回收後再度使用於洗淨。例如,亦可藉由過濾將自洗淨槽回收之使用過之合金材料用洗淨劑所含之固形物去除後再使用。亦可視需要將未使用之合金材料用洗淨劑與使用過之合金材料用洗淨劑一起供給於洗淨槽中。合金材料用洗淨劑之再使用,就可削減成為廢液之合金材料用洗淨劑之量而減輕環境負荷方面,以及削減所使用之合金材料用洗淨劑之量而可抑制洗淨所需之成本方面而言較有利。
由上述實施形態可掌握之技術想法記載於下。
(a)一種合金材料用洗淨劑,其含有SO3M基中之以“M”表示之相對離子為氫離子之磺酸型陰離子性界面活性劑作為前述陰離子性界面活性劑。
(b)一種合金材料用洗淨劑,其為含有具有SO3M基(但,M表示相對離子)之陰離子性界面活性劑,同時具有1.5以上4以下範圍之pH之合金材料用洗淨劑,適用於使用研磨用組成物研磨之合金材料,前述研磨用組成物含有膠體二氧化矽及氧化劑,同時具有8以上且12以下之範圍之pH。
(c)一種合金材料用洗淨劑,係適用於具有使用研磨用組成物研磨之鏡面之合金材料,且用於洗淨其鏡面之用途中。
以下說明實施例及比較例。
調製表1所示之組成1~10之合金材料用洗淨劑。關於組成1~3、5~7及9之合金材料用洗淨劑,首先以水稀釋陰離子性界面活性劑,隨後,添加pH調整劑。各合金材料用洗淨劑之pH係如表1之“pH”欄中所記載。pH係針對20℃之合金材料用洗淨劑進行測定。
使用組成1~10之各合金材料用洗淨劑進行合金材料之製造。如表2所示,實施例1~7分別使用組成1~7之合金材料用洗淨劑,比較例1~3分別使用組成8~10之合金材料用洗淨劑。
實施例1中使用32mm×32mm×5mm之板狀鋁合金作為合金材料。該鋁合金含有合計1%左右之Si、Fe、Mn等。
首先,使用含有膠體二氧化矽作為研磨粒之pH10之研磨用組成物,進行研磨合金材料之研磨步驟。該研磨步驟使用不含研磨粒之鞣皮型研磨墊,邊施加一定壓力邊研磨合金材料直至合金材料之一面成為鏡面為止。
接著,如下述實施第1洗淨階段。將研磨步驟後之合金材料浸漬於第1洗淨槽內之組成1之合金材料用洗淨劑
中。將該第1洗淨槽移送到裝設超音波產生裝置之第2洗淨槽。將合金材料移到第2洗淨槽中,使合金材料浸漬於第2洗淨槽內之組成1之合金材料用洗淨劑中。接著,將第2洗淨槽內之合金材料用洗淨劑之溫度升溫至表2之“洗淨溫度”欄所示之溫度,邊維持該溫度邊對合金材料用洗淨劑照射頻率750kHz之超音波3分鐘。通過第1洗淨階段,合金材料用洗淨劑之溫度不會超過表2之“洗淨溫度”欄中所示之溫度。
接著,第2洗淨階段係如下實施。將合金材料移到第3洗淨槽中,於第3洗淨槽內將合金材料浸漬於純水中。接著,對第3洗淨槽內之純水照射頻率430kHz之超音波3分鐘。
最後,自第3洗淨槽取出合金材料,吹送乾燥空氣使合金材料乾燥。
實施例2~7及比較例1~3中,除如表2所示般變更合金材料用洗淨劑以外,餘與實施例1同樣研磨合金材料,經洗淨及乾燥。
在暗室內對各實施例及比較例所得之合金材料之表面照射點狀光,以目視確認合金材料表面上之研磨用組成物之殘留程度。表2之“清潔性”欄中,“A”表示遍及合金材料之鏡面全體未辨識到研磨用組成物之殘留,“B”表示合金材料之鏡面上稍辨識到研磨用組成物之殘留,
“C”表示遍及合金材料之鏡面全體辨識到研磨用組成物之殘留。
使用微分干涉顯微鏡,以目視確認各實施例及比較例所得之合金材料鏡面之腐蝕程度。表2之“腐蝕抑制”欄中,“A”表示遍及合金材料鏡面之全面均未辨識到腐蝕,B表示合金材料之鏡面上稍辨識到腐蝕,“C”表示遍及合金材料鏡面之1/2以上辨識到腐蝕。
如表2所示,實施例1~7之評價結果均為“A”或“B”。另一方面,比較例1~3之清潔性及腐蝕抑制之任一評價結果為“C”,為比實施例1~7差之評價結果。
使用組成2之合金材料用洗淨劑,改變洗淨溫度製造合金材料,且進行清潔性及腐蝕抑制之評價。於自室溫至60℃之洗淨溫度,清潔性及腐蝕抑制之評價均與實施例2同等。相對於該等,在超過60℃之洗淨溫度下,會有腐蝕抑制之評價結果比實施例2差之傾向。因此,將洗淨步驟中之洗淨溫度設定為60℃以下係有利。
Claims (6)
- 一種合金材料之製造方法,其係包含使用研磨用組成物研磨合金材料之研磨步驟,及,前述研磨步驟後使用合金材料用洗淨劑洗淨前述合金材料之洗淨步驟;該合金材料用洗淨劑含有具有SO3M基(但,M係表示相對離子)之陰離子性界面活性劑,而且具有1.5以上且4以下之範圍的pH。
- 如請求項1之合金材料之製造方法,其中前述洗淨步驟係在使前述研磨步驟後附著於合金材料上之前述研磨用組成物乾燥之前,使前述合金材料與前述合金材料用洗淨劑接觸。
- 如請求項1或請求項2之合金材料之製造方法,其中前述陰離子性界面活性劑為烷基苯磺酸或其鹽。
- 如請求項1或請求項2之合金材料之製造方法,其中前述合金材料用洗淨劑中之前述陰離子性界面活性劑之含量為300質量ppm以上15000質量ppm以下。
- 如請求項1或請求項2之合金材料之製造方法,其中前述洗淨步驟中前述合金材料用洗淨劑之溫度為60℃以下。
- 如請求項1或請求項2之合金材料之製造方法,其中前述洗淨步驟中係照射20kHz~2000kHz頻率之超音波。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012103252 | 2012-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201402805A TW201402805A (zh) | 2014-01-16 |
TWI577791B true TWI577791B (zh) | 2017-04-11 |
Family
ID=49483185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102114600A TWI577791B (zh) | 2012-04-27 | 2013-04-24 | 合金材料用洗淨劑及合金材料之製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20150140906A1 (zh) |
JP (2) | JPWO2013161877A1 (zh) |
KR (1) | KR20150003871A (zh) |
CN (1) | CN104271805A (zh) |
TW (1) | TWI577791B (zh) |
WO (1) | WO2013161877A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150344822A1 (en) * | 2014-06-02 | 2015-12-03 | Tetra Tech, Inc. | Decontaminant and Process for Decontamination of Chemicals from Infrastructural Materials |
KR101869915B1 (ko) | 2015-06-25 | 2018-06-25 | 재단법인 멀티스케일 에너지시스템 연구단 | 할로겐화 납 어덕트 화합물 및 이를 이용한 페로브스카이트 소자 |
JP6500681B2 (ja) * | 2015-07-31 | 2019-04-17 | 信越化学工業株式会社 | イットリウム系溶射皮膜、及びその製造方法 |
CN106676557A (zh) * | 2016-05-27 | 2017-05-17 | 荆门市拓达科技有限公司 | 金属防腐清洗剂 |
US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
JP7313037B2 (ja) * | 2019-05-08 | 2023-07-24 | 奥野製薬工業株式会社 | アルミニウム材のデスマット処理剤 |
JP2021195622A (ja) * | 2020-06-12 | 2021-12-27 | 花王株式会社 | 鋼板用洗浄剤 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101054546A (zh) * | 2007-05-15 | 2007-10-17 | 重庆大学 | 一种清模剂及该清模剂对镁合金用挤压模具的清洗方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4936538B1 (zh) * | 1968-08-02 | 1974-10-01 | ||
US4759867A (en) * | 1983-07-07 | 1988-07-26 | The Clorox Company | Hard surface acid cleaner |
JPS6241298A (ja) * | 1985-08-19 | 1987-02-23 | 株式会社日立ビルシステムサ−ビス | 洗浄剤 |
JPH01246068A (ja) * | 1988-03-29 | 1989-10-02 | Kobe Steel Ltd | アルミニウム合金基板の鏡面仕上げ方法 |
JP2984765B2 (ja) * | 1990-07-24 | 1999-11-29 | 小林製薬株式会社 | 洗浄剤組成物 |
JP4516176B2 (ja) * | 1999-04-20 | 2010-08-04 | 関東化学株式会社 | 電子材料用基板洗浄液 |
EP1167500A1 (en) * | 2000-06-29 | 2002-01-02 | The Procter & Gamble Company | Process of cleaning a hard surface |
ATE327310T1 (de) * | 2002-02-28 | 2006-06-15 | Unilever Nv | Flüssige reinigungsmittel |
JP2005044488A (ja) * | 2003-07-09 | 2005-02-17 | Fuji Electric Device Technology Co Ltd | 磁気記録媒体用基板及び磁気記録媒体の製造方法並びに基板洗浄装置 |
WO2005029591A1 (ja) * | 2003-09-23 | 2005-03-31 | The Furukawa Electric Co., Ltd. | 一次元半導体基板、並びに、該一次元半導体基板を用いた素子、素子アレー、及びモジュール |
JP4821122B2 (ja) * | 2004-02-10 | 2011-11-24 | Jsr株式会社 | 洗浄用組成物、半導体基板の洗浄方法および半導体装置の製造方法 |
WO2005081301A1 (en) * | 2004-02-25 | 2005-09-01 | Ebara Corporation | Polishing apparatus and substrate processing apparatus |
CA2598145C (en) * | 2006-08-21 | 2015-01-20 | Henkel Kommanditgesellschaft Auf Aktien | Low-foaming, acidic low-temperature cleaner and process for cleaning surfaces |
JP5274993B2 (ja) * | 2007-12-03 | 2013-08-28 | 株式会社荏原製作所 | 研磨装置 |
WO2009151556A1 (en) * | 2008-06-09 | 2009-12-17 | Fsi International, Inc. | Hydrophilic fluoropolymer materials and methods |
WO2010070819A1 (ja) * | 2008-12-19 | 2010-06-24 | 三洋化成工業株式会社 | 電子材料用洗浄剤 |
SG176151A1 (en) * | 2009-05-27 | 2011-12-29 | Rogers Corp | Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer |
JP5519256B2 (ja) * | 2009-12-03 | 2014-06-11 | 株式会社荏原製作所 | 裏面が研削された基板を研磨する方法および装置 |
-
2013
- 2013-04-24 US US14/395,988 patent/US20150140906A1/en not_active Abandoned
- 2013-04-24 KR KR20147032876A patent/KR20150003871A/ko not_active Application Discontinuation
- 2013-04-24 TW TW102114600A patent/TWI577791B/zh active
- 2013-04-24 WO PCT/JP2013/062074 patent/WO2013161877A1/ja active Application Filing
- 2013-04-24 JP JP2014512649A patent/JPWO2013161877A1/ja active Pending
- 2013-04-24 CN CN201380021506.4A patent/CN104271805A/zh active Pending
-
2017
- 2017-05-08 JP JP2017092241A patent/JP2017186676A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101054546A (zh) * | 2007-05-15 | 2007-10-17 | 重庆大学 | 一种清模剂及该清模剂对镁合金用挤压模具的清洗方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20150003871A (ko) | 2015-01-09 |
JPWO2013161877A1 (ja) | 2015-12-24 |
JP2017186676A (ja) | 2017-10-12 |
TW201402805A (zh) | 2014-01-16 |
WO2013161877A1 (ja) | 2013-10-31 |
US20150140906A1 (en) | 2015-05-21 |
CN104271805A (zh) | 2015-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI577791B (zh) | 合金材料用洗淨劑及合金材料之製造方法 | |
US6395693B1 (en) | Cleaning solution for semiconductor surfaces following chemical-mechanical polishing | |
US5968280A (en) | Method for cleaning a surface | |
TWI507521B (zh) | 銅鈍化之後段化學機械拋光清洗組成物及利用該組成物之方法 | |
JP5002175B2 (ja) | 研磨スラリーおよびウエハ再生方法 | |
TW200538544A (en) | Alkaline post-chemical mechanical planarization cleaning compositions | |
WO2013088928A1 (ja) | 洗浄剤、および炭化ケイ素単結晶基板の製造方法 | |
EP2812422B1 (en) | A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol | |
KR20170099842A (ko) | 연마용 조성물, 연마 방법, 및 세라믹제 부품의 제조 방법 | |
KR102617007B1 (ko) | 기판의 연마 방법 및 연마용 조성물 세트 | |
WO2017169539A1 (ja) | 表面処理組成物、表面処理組成物の製造方法、表面処理方法および半導体基板の製造方法 | |
JP2009531512A (ja) | Cmp後洗浄プロセスのための防腐剤を含む洗浄溶液 | |
US20070240734A1 (en) | Method of cleaning post-cmp wafer | |
TW201840838A (zh) | 表面處理組成物及其製造方法、表面處理方法以及半導體基板之製造方法 | |
JP6393228B2 (ja) | 研磨用組成物および研磨物の製造方法 | |
US6905974B2 (en) | Methods using a peroxide-generating compound to remove group VIII metal-containing residue | |
TW201742138A (zh) | 研磨用組成物套組、前研磨用組成物及矽晶圓之研磨方法 | |
WO2021067151A1 (en) | Low dishing copper chemical mechanical planarization | |
Deng et al. | A novel cleaner for colloidal silica abrasive removal in post-Cu CMP cleaning | |
US20180163159A1 (en) | Cleaning agent composition for glass hard disk substrate | |
JP5073475B2 (ja) | ハードディスク用基板の製造方法 | |
TW201339299A (zh) | 包含特定含硫化合物及包含非有效量之特定含氮化合物之化學機械拋光後之清洗組合物 | |
Tseng et al. | Post cleaning and defect reduction for tungsten chemical mechanical planarization | |
JP2015203047A (ja) | 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法 | |
CN113969215A (zh) | 洗涤液组合物及使用其的洗涤方法 |