TWI576929B - Package structure and method of manufacture - Google Patents
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- TWI576929B TWI576929B TW104144005A TW104144005A TWI576929B TW I576929 B TWI576929 B TW I576929B TW 104144005 A TW104144005 A TW 104144005A TW 104144005 A TW104144005 A TW 104144005A TW I576929 B TWI576929 B TW I576929B
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Description
本發明係有關一種封裝結構及其製法，尤指一種可發光的封裝結構及其製法。 The invention relates to a package structure and a preparation method thereof, in particular to a light-emitting package structure and a preparation method thereof.
隨著低碳時代的來臨，發光二極體(Light Emitting Diode，簡稱LED)因具有壽命長、體積小、耐震性高及耗電量低等優點，故廣泛地應用於照明需求之電子產品中。於工業上、各式電子產品、及生活家電之應用日趨普及。 With the advent of the low-carbon era, Light Emitting Diode (LED) is widely used in lighting products due to its long life, small size, high shock resistance and low power consumption. . The use of industrial, various electronic products, and household appliances has become increasingly popular.
第1圖係揭示一種習知LED封裝件之剖面圖，該LED封裝件1包括有：一透光件16；一螢光層12結合於透光件16上；一發光元件13設置於螢光層12上；一包覆層14設置於螢光層12上，且覆蓋發光元件13的側面。 1 is a cross-sectional view of a conventional LED package. The LED package 1 includes a light transmissive member 16; a phosphor layer 12 is coupled to the light transmissive member 16; and a light emitting device 13 is disposed on the phosphor. On the layer 12, a cladding layer 14 is disposed on the phosphor layer 12 and covers the side surface of the light-emitting element 13.
惟，習知LED封裝件中，該發光元件13透出螢光層12的部分光線可能自該螢光層12的側邊外洩出，甚至於當包覆層14為透光材質時，更容易造成大量的光線漏失，導致發光效率不佳等問題。 However, in the conventional LED package, part of the light that the light-emitting element 13 sees through the phosphor layer 12 may leak out from the side of the phosphor layer 12, even when the cladding layer 14 is a light-transmitting material. It is easy to cause a large amount of light to leak, resulting in problems such as poor luminous efficiency.
因此，如何克服習知技術中之問題，實已成目前亟欲解決的課題。 Therefore, how to overcome the problems in the prior art has become a problem that is currently being solved.
鑑於上述習知技術之缺失，本發明提供一種封裝結構之製法，係包括：提供複數間隔排列之發光元件，該些發光元件具有相對之第一表面與第二表面，且該第一表面上具有複數電極墊；於該些發光元件之間隔中形成包覆層，其中該包覆層之高度低於或齊平該些發光元件之第一表面之高度；於該些發光元件間隔之包覆層中形成複數溝槽；於該包覆層上與該些溝槽中形成反射層。 In view of the above-mentioned deficiencies of the prior art, the present invention provides a method of fabricating a package structure, comprising: providing a plurality of spaced-apart light-emitting elements having opposite first and second surfaces, and having the first surface a plurality of electrode pads; forming a cladding layer in the interval of the light-emitting elements, wherein a height of the cladding layer is lower than or flushes a height of the first surface of the light-emitting elements; and a coating layer spaced apart from the light-emitting elements Forming a plurality of trenches therein; forming a reflective layer on the cladding layer and the trenches.
前述之製法中，復包括形成有一結合該些發光元件之螢光層，其中該些發光元件之第二表面與該螢光層接觸。 In the above method, the method further comprises forming a phosphor layer combined with the light-emitting elements, wherein the second surface of the light-emitting elements is in contact with the phosphor layer.
前述之製法中，復包括提供一離型層，該螢光層形成於該離型層上。 In the above method, the method further comprises providing a release layer, and the phosphor layer is formed on the release layer.
前述之製法中，復包括移除該離型層。 In the foregoing method, the removal includes removing the release layer.
前述之製法中，該些溝槽貫穿該包覆層與該螢光層。 In the above method, the trenches penetrate the cladding layer and the phosphor layer.
前述之製法中，復包括沿該些溝槽進行切單製程。 In the foregoing method, the process includes performing a singulation process along the trenches.
本發明復提供一種封裝結構，係包括：發光元件，係具有相對之第一表面與第二表面、及鄰接該第一表面與該第二表面之側面，其中該第一表面上具有複數電極墊；包覆層，係形成於該發光元件之側面上，且該包覆層之高度低於或齊平該些發光元件之第一表面之高度；以及反射層，係形成於該發光元件之側面，且包覆該包覆層。 The present invention further provides a package structure comprising: a light-emitting element having opposite first and second surfaces, and a side adjacent to the first surface and the second surface, wherein the first surface has a plurality of electrode pads a cladding layer formed on a side of the light emitting element, wherein the height of the cladding layer is lower than or flush with a height of the first surface of the light emitting elements; and a reflective layer formed on a side of the light emitting element And coating the coating layer.
前述之結構中，復包括螢光層，係形成於該包覆層與該發光元件之第二表面上。 In the foregoing structure, the fluorescent layer is further formed on the second surface of the cladding layer and the light emitting element.
前述之製法與結構中，該反射層覆蓋該發光元件之第 一表面且外露出該電極墊。 In the foregoing method and structure, the reflective layer covers the first of the light-emitting elements The electrode pad is exposed on a surface.
前述之製法與結構中，該包覆層係為透光材質所形成者，該反射層係為白膠。 In the above-mentioned manufacturing method and structure, the coating layer is formed by a light-transmitting material, and the reflective layer is white glue.
由上可知，本發明之封裝結構及其製法係藉由在複數發光元件間隔之包覆層中形成溝槽，再於該包覆層上與該些溝槽中形成包覆該包覆層之反射層，隨後沿該些溝槽之中線作為切割路徑進行切單製程，其中，由於該包覆層之高度低於或齊平發光元件之第一表面，同時反射層係形成於該發光元件之側面且包覆該包覆層，故可有效減少傳統LED發光組件光線從覆層的側邊洩出之問題。 As can be seen from the above, the package structure of the present invention is formed by forming a trench in a cladding layer of a plurality of light-emitting elements, and forming a cladding layer on the cladding layer and the trenches. The reflective layer is then subjected to a singulation process along the line of the trenches as a dicing path, wherein the reflective layer is formed on the illuminating element because the height of the cladding layer is lower than or flushes the first surface of the illuminating element The side surface is covered with the coating layer, so that the problem that the light of the conventional LED light-emitting component leaks from the side of the coating layer can be effectively reduced.
1‧‧‧LED封裝件 1‧‧‧LED package
12,22‧‧‧螢光層 12,22‧‧‧Fluorescent layer
13,23‧‧‧發光元件 13,23‧‧‧Lighting elements
14,24‧‧‧包覆層 14,24‧‧ ‧ coating
16‧‧‧透光件 16‧‧‧Light transmission parts
2,2’,2”‧‧‧封裝結構 2,2’,2”‧‧‧ package structure
21‧‧‧離型層 21‧‧‧ release layer
23a‧‧‧第一表面 23a‧‧‧ first surface
23b‧‧‧第二表面 23b‧‧‧ second surface
23c‧‧‧側面 23c‧‧‧ side
231‧‧‧電極墊 231‧‧‧electrode pads
25‧‧‧溝槽 25‧‧‧ trench
26‧‧‧反射層 26‧‧‧reflective layer
S‧‧‧切割路徑 S‧‧‧ cutting path
h,h’‧‧‧包覆層之高度 h, h’‧‧‧The height of the cladding
第1圖係為習知LED封裝件之剖面圖；以及第2A至2E圖係為本發明之封裝結構之製法之剖面示意圖，其中第2B’、2D’、2E’及2E”圖係為對應第2 B、2D與2E圖之另一實施態樣。 1 is a cross-sectional view of a conventional LED package; and FIGS. 2A to 2E are schematic cross-sectional views showing a method of manufacturing the package structure of the present invention, wherein the 2B', 2D', 2E', and 2E" diagrams correspond to Another embodiment of the second B, 2D and 2E diagrams.
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功 效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如“上”、及“一”等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The qualifications are not technically meaningful, and any modification of the structure, change of the proportional relationship or adjustment of the size does not affect the work that can be produced by the present invention. Both the effects and the achievable objectives should still fall within the scope of the technical contents disclosed in the present invention. In the meantime, the terms "upper" and "one" as used in the specification are merely for convenience of description, and are not intended to limit the scope of the invention, and the relative relationship is changed or adjusted. Without substantial changes to the technical content, it is also considered to be within the scope of the invention.
請參閱第2A至2E圖，係為本發明之封裝結構及其製法之實施例的剖面示意圖。 2A to 2E are cross-sectional views showing an embodiment of the package structure and the method of manufacturing the same according to the present invention.
如第2A圖所示，提供一離型層21，於該離型層21上形成一螢光層22，並於螢光層22上設置複數間隔排列之發光元件23，該些發光元件23具有相對之第一表面23a、第二表面23b及鄰接該第一表面23a與該第二表面23b之側面23c，其中該些發光元件23之第一表面23a上具有複數電極墊231。 As shown in FIG. 2A, a release layer 21 is provided, a phosphor layer 22 is formed on the release layer 21, and a plurality of light-emitting elements 23 are arranged on the phosphor layer 22, and the light-emitting elements 23 have The first surface 23a, the second surface 23b, and the side surface 23c adjacent to the first surface 23a and the second surface 23b, wherein the first surface 23a of the light-emitting elements 23 has a plurality of electrode pads 231 thereon.
於本實施例中，該些發光元件23係為發光二極體，並透過該第二表面23b以供該些發光元件23結合於螢光層22上。 In this embodiment, the light-emitting elements 23 are light-emitting diodes and are transmitted through the second surface 23b for the light-emitting elements 23 to be bonded to the phosphor layer 22.
另外，亦可選擇以例如玻璃等透光件取代該離型層，以供該螢光層及發光元件設置其上。 Alternatively, the release layer may be replaced by a light transmissive member such as glass for the phosphor layer and the light-emitting element to be disposed thereon.
如第2B圖所示，於該些發光元件間之該螢光層22上形成包覆層24，且該包覆層24之高度h低於該些發光元件23之第一表面23a高度。於本實施例中，該包覆層24係為透光材質所形成者，例如透明膠層(如透明矽膠)，當然亦可為非透明膠層(如白膠等非透光材質所形成)，且 該包覆層24係以充填方式或模封(molding)方式形成。 As shown in FIG. 2B, a cladding layer 24 is formed on the phosphor layer 22 between the light-emitting elements, and the height h of the cladding layer 24 is lower than the height of the first surface 23a of the light-emitting elements 23. In this embodiment, the coating layer 24 is formed by a transparent material, such as a transparent adhesive layer (such as a transparent silicone), and of course, a non-transparent adhesive layer (such as a non-transparent material such as white plastic). And The cladding layer 24 is formed by a filling method or a molding method.
請參閱第2B’圖，係為對應第2B圖之另一實施態樣。本實施態樣與前述大致相同，主要差異在於該包覆層24之高度h’齊平該些發光元件23之第一表面23a，其餘部分同前所述，故不再贅述相同製程部分。 Please refer to FIG. 2B' for another embodiment corresponding to FIG. 2B. This embodiment is substantially the same as the above, and the main difference is that the height h' of the cladding layer 24 is flush with the first surface 23a of the light-emitting elements 23, and the rest is the same as described above, so the same process portion will not be described again.
如第2C圖所示，形成複數溝槽25於該些發光元件23間隔之包覆層24中，其中該些溝槽25貫穿包覆層24與螢光層22，而形成複數溝槽25之方式可為雷射切割或刀具切割。另該構槽25之斷面形狀可例如為本圖式之矩形，亦或其它形狀(例如V型，以藉由形成於該V型斷面之兩側斜面提升發光元件之出光率)。 As shown in FIG. 2C, a plurality of trenches 25 are formed in the cladding layer 24 of the light-emitting elements 23, wherein the trenches 25 penetrate the cladding layer 24 and the phosphor layer 22 to form a plurality of trenches 25. The way can be laser cutting or cutting. Further, the cross-sectional shape of the grooving groove 25 may be, for example, a rectangular shape of the present drawing or another shape (for example, a V-shape to enhance the light-emitting rate of the light-emitting element by the bevel formed on both sides of the V-shaped cross-section).
如第2D圖所示，形成反射層26於該包覆層24上與該些溝槽25中。於本實施例中，該反射層26係為不透光之反射材質所形成者，例如白膠。該反射層26係以充填方式或模封(molding)方式形成。 As shown in FIG. 2D, a reflective layer 26 is formed on the cladding layer 24 and in the trenches 25. In this embodiment, the reflective layer 26 is formed by a light-reflecting reflective material, such as white glue. The reflective layer 26 is formed by a filling method or a molding method.
如第2E圖所示，沿如第2D圖所示之切割路徑S(即沿該些溝槽25之中線)進行切單製程並移除該離型層21，以外露該反射層26與螢光層22，進而製得複數個發光式封裝結構2。 As shown in FIG. 2E, the dicing process S is performed along the cutting path S as shown in FIG. 2D (ie, along the line among the trenches 25) and the release layer 21 is removed, and the reflective layer 26 is exposed. The phosphor layer 22, in turn, produces a plurality of light-emitting package structures 2.
請參閱第2D’與2E’圖，係為對應第2D與2E圖之另一實施態樣。本實施態樣與前述大致相同，主要差異在於該反射層26覆蓋該些發光元件23之第一表面23a，但外露出該些電極墊231。 Please refer to the 2D' and 2E' diagrams for another embodiment corresponding to the 2D and 2E diagrams. This embodiment is substantially the same as the above, and the main difference is that the reflective layer 26 covers the first surface 23a of the light-emitting elements 23, but the electrode pads 231 are exposed.
請參閱第2E”圖，係為對應第2B’圖進行前述製程 後所得之發光式封裝結構2”。本實施態樣之發光式封裝結構2”與前述大致相同，主要差異在於該包覆層24之高度齊平該些發光元件23之第一表面23a。另外，該反射層26係可選擇覆蓋該些發光元件23之第一表面23a(未圖示)，但外露出該些電極墊231。 Please refer to the 2E" diagram for the aforementioned process corresponding to the 2B' diagram. The light-emitting package structure 2" obtained in the following embodiment is substantially the same as the above, and the main difference is that the height of the cladding layer 24 is flush with the first surface 23a of the light-emitting elements 23. In addition, the reflective layer 26 may selectively cover the first surface 23a (not shown) of the light-emitting elements 23, but expose the electrode pads 231.
本發明復提供一種封裝結構2,2’,2”，係包括：一螢光層22、一發光元件23、一電極墊231、一包覆層24以及一反射層26。 The present invention provides a package structure 2, 2', 2" comprising a phosphor layer 22, a light-emitting element 23, an electrode pad 231, a cladding layer 24, and a reflective layer 26.
所述之發光元件23係為發光二極體，其具有相對之第一表面23a與第二表面23b、及鄰接該第一表面23a與該第二表面23b之側面23c，其中該些發光元件23之第一表面23a上具有複數電極墊231。 The light-emitting element 23 is a light-emitting diode having a first surface 23a and a second surface 23b opposite to each other, and a side surface 23c adjacent to the first surface 23a and the second surface 23b, wherein the light-emitting elements 23 The first surface 23a has a plurality of electrode pads 231 thereon.
該包覆層24係形成於該發光元件23之側面上，且該包覆層24之高度h低於或齊平該些發光元件23之第一表面23a。在本實施例中，包覆層24係為透光材質所形成者，例如透明膠層(如透明矽膠)當然亦可為非透明膠層(如白膠)。 The cladding layer 24 is formed on the side of the light-emitting element 23, and the height h of the cladding layer 24 is lower than or flush with the first surface 23a of the light-emitting elements 23. In this embodiment, the covering layer 24 is formed by a transparent material, for example, a transparent adhesive layer (such as a transparent silicone) or a non-transparent adhesive layer (such as white plastic).
該螢光層22係形成於該包覆層24與該發光元件23之第二表面23b上。 The phosphor layer 22 is formed on the cladding layer 24 and the second surface 23b of the light-emitting element 23.
該反射層26係形成於該發光元件23之側面，並包覆該包覆層24，且遮蓋住該螢光層22之側邊。於本實施例中，該反射層26係為不透光之反射材質所形成者，例如白膠。 The reflective layer 26 is formed on the side of the light-emitting element 23 and covers the cladding layer 24 and covers the side of the phosphor layer 22 . In this embodiment, the reflective layer 26 is formed by a light-reflecting reflective material, such as white glue.
在一些實施例中，該反射層26覆蓋該發光元件23之 第一表面23a且外露出該電極墊231。 In some embodiments, the reflective layer 26 covers the light-emitting element 23 The electrode pad 231 is exposed on the first surface 23a.
透過前述說明可知，本發明之封裝結構及其製法係藉由在複數發光元件23間隔之包覆層24中形成溝槽25，再於該包覆層24上與該些溝槽25中形成包覆該包覆層24之反射層26，隨後沿該些溝槽25之中線作為切割路徑S進行切單製程，其中，由於該包覆層24之高度低於或齊平發光元件23之第一表面23a，同時反射層26係形成於該發光元件23之側面且包覆該包覆層24，並可遮蓋住該螢光層22之側邊，因此能有效減少傳統LED發光組件光線從螢光層22的側邊亦或包覆層24的側邊洩出之問題。 As can be seen from the foregoing description, the package structure of the present invention is formed by forming a trench 25 in the cladding layer 24 spaced apart from the plurality of light-emitting elements 23, and forming a package on the cladding layer 24 and the trenches 25. Covering the reflective layer 26 of the cladding layer 24, and then performing a singulation process along the line of the trenches 25 as a cutting path S, wherein the height of the cladding layer 24 is lower than or equal to the level of the light-emitting element 23 a surface 23a, the reflective layer 26 is formed on the side of the light-emitting element 23 and covers the cladding layer 24, and can cover the side of the fluorescent layer 22, thereby effectively reducing the light of the conventional LED light-emitting component from the firefly The side edges of the light layer 22 or the side edges of the cladding layer 24 are vented.
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
2‧‧‧封裝結構 2‧‧‧Package structure
22‧‧‧螢光層 22‧‧‧Fluorescent layer
23‧‧‧發光元件 23‧‧‧Lighting elements
231‧‧‧電極墊 231‧‧‧electrode pads
24‧‧‧包覆層 24‧‧‧Cladding
26‧‧‧反射層 26‧‧‧reflective layer
Claims (14)
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| TW104144005A TWI576929B (en) | 2015-12-28 | 2015-12-28 | Package structure and method of manufacture |
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| TW104144005A TWI576929B (en) | 2015-12-28 | 2015-12-28 | Package structure and method of manufacture |
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| TWI576929B true TWI576929B (en) | 2017-04-01 |
| TW201724288A TW201724288A (en) | 2017-07-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10468570B2 (en) | 2017-12-11 | 2019-11-05 | Unimicron Technology Corp. | Circuit board and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431950B2 (en) * | 2008-05-23 | 2013-04-30 | Chia-Lun Tsai | Light emitting device package structure and fabricating method thereof |
| TW201336113A (en) * | 2012-02-17 | 2013-09-01 | Advanced Optoelectronic Tech | Method for manufacturing a LED package |
| TW201344992A (en) * | 2012-04-27 | 2013-11-01 | Toshiba Kk | A semiconductor light emitting device |
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2015
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8431950B2 (en) * | 2008-05-23 | 2013-04-30 | Chia-Lun Tsai | Light emitting device package structure and fabricating method thereof |
| TW201336113A (en) * | 2012-02-17 | 2013-09-01 | Advanced Optoelectronic Tech | Method for manufacturing a LED package |
| TW201344992A (en) * | 2012-04-27 | 2013-11-01 | Toshiba Kk | A semiconductor light emitting device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10468570B2 (en) | 2017-12-11 | 2019-11-05 | Unimicron Technology Corp. | Circuit board and method for manufacturing the same |
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| TW201724288A (en) | 2017-07-01 |
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