TWI575647B - A substrate mounting platform and a plasma processing apparatus and a method of operating the same - Google Patents
A substrate mounting platform and a plasma processing apparatus and a method of operating the same Download PDFInfo
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- TWI575647B TWI575647B TW103143960A TW103143960A TWI575647B TW I575647 B TWI575647 B TW I575647B TW 103143960 A TW103143960 A TW 103143960A TW 103143960 A TW103143960 A TW 103143960A TW I575647 B TWI575647 B TW I575647B
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本發明涉及半導體製造技術領域，尤其涉及一種電漿處理裝置內的基片安裝平台及其運行方法。 The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a substrate mounting platform in a plasma processing apparatus and a method of operating the same.
如圖1所示，電漿處理裝置包括一個反應腔10，反應腔內包括一個導電基座33，導電基座內包括下電極。導電基座上方包括靜電夾盤34，待處理的基片30設置在靜電夾盤上，一個聚焦環36圍繞在靜電夾盤周圍。一個具有較低頻率(如2Mhz~400Khz)的射頻電源35通過一個匹配器連接到導電基座內的下電極33。反應腔頂部還包括一個氣體分佈裝置40，如氣體噴淋頭、或者將反應氣體通入反應腔的噴管。氣體分佈裝置通過分流裝置或者開關閥門連接到一個氣源20。氣體噴淋頭可以作為上電極與導電基座33內的下電極配合構成電容，至少一個高頻射頻電源連接到電容至少一端以產生電容耦合(CCP)電漿體。也可以在反應腔頂部上方安裝感應線圈，感應線圈連接到高頻射頻電源(大於13Mhz)，產生的高頻電磁場穿過反應腔頂部的絕緣窗進入基片上方的空間，使反應氣體電離產生電漿體。反應腔外產生的電漿體反應氣體(Remote plasma)被通入反應腔也可以用來進行部分加工流程的處理。基片30被下方的靜電夾盤固定在導電基座上，其中靜電夾盤內包括至少一個直流電極，該直流電極連接到一個直流電源，直流電極上的高壓直流電壓(700-3000V)可以在基片上感應 產生電荷，基片上的電荷與靜電夾盤的電極相互靜電吸引使基片被牢牢固定在靜電夾盤上。 As shown in FIG. 1, the plasma processing apparatus includes a reaction chamber 10 including a conductive base 33 including a lower electrode therein. An electrostatic chuck 34 is included above the conductive base, the substrate 30 to be processed is disposed on the electrostatic chuck, and a focus ring 36 surrounds the electrostatic chuck. A radio frequency power source 35 having a lower frequency (e.g., 2 Mhz to 400 Khz) is connected to the lower electrode 33 in the conductive base through a matching device. The top of the reaction chamber also includes a gas distribution device 40, such as a gas showerhead, or a nozzle that directs the reaction gas into the reaction chamber. The gas distribution device is connected to a gas source 20 via a flow dividing device or a switching valve. The gas showerhead can function as an upper electrode to cooperate with a lower electrode in the conductive pedestal 33 to form a capacitor, and at least one high frequency RF power source is coupled to at least one end of the capacitor to produce a capacitively coupled (CCP) plasma. An induction coil can also be installed above the top of the reaction chamber. The induction coil is connected to a high-frequency RF power supply (greater than 13Mhz), and the generated high-frequency electromagnetic field passes through the insulating window at the top of the reaction chamber to enter the space above the substrate, so that the reaction gas is ionized to generate electricity. Slurry. The plasma plasma generated outside the reaction chamber is introduced into the reaction chamber and can also be used for partial processing. The substrate 30 is fixed on the conductive base by the lower electrostatic chuck, wherein the electrostatic chuck comprises at least one DC electrode connected to a DC power source, and the high voltage DC voltage (700-3000V) on the DC electrode can be based on On-chip sensing The charge is generated and the charge on the substrate and the electrodes of the electrostatic chuck are electrostatically attracted to each other to secure the substrate to the electrostatic chuck.
圖2所示為導電基座內的具體結構，導電基座33內包括通有冷卻液的冷卻管道330，導電基座33向外伸展部分上方還有一個隔離環32，聚焦環36圍繞基片30並固定在隔離環32上方。冷卻氣體源37(典型的如氦氣)通過冷卻氣體管道通入靜電夾盤34和基片之間的空間，通過冷卻氣體的流動帶走基片上的熱量。 2 shows a specific structure in the conductive base. The conductive base 33 includes a cooling duct 330 through which a coolant is passed. The conductive base 33 has an isolation ring 32 above the outwardly extending portion, and the focus ring 36 surrounds the substrate. 30 and fixed above the spacer ring 32. A source of cooling gas 37 (typically helium) is passed through a cooling gas conduit into the space between the electrostatic chuck 34 and the substrate, and the heat of the substrate is carried away by the flow of cooling gas.
如圖2所示，習知技術中聚焦環36一般沒有主動冷卻功能，在電漿處理時上方的電漿會使聚焦環36的溫度持續上升，不同時間進行電漿處理的效果會由於聚焦環溫度的變化而逐漸變化。而且為了防止靜電夾盤被上方的電漿腐蝕所以靜電夾盤的尺寸要小於基片，一部分聚焦環會伸入基片30下方，所以在靜電夾盤半徑以內的基片得到冷卻氣體的溫度控制可以達到比較均一的溫度分佈，而周邊聚焦環36對應上方的基片溫度會明顯偏高。這樣就會在基片邊緣上形成明顯的溫度漸變區域，造成邊緣區域周圍的基片處理效果與中心區域明顯不同。靜電夾盤34與聚焦環36之間的間隙會構成一個通道，部分電漿會沿著通道到達基片下方腐蝕靜電夾盤側面和靜電夾盤34與導電基座33之間的有機粘接層31，進而會損壞靜電夾盤甚至使其失效。 As shown in FIG. 2, in the prior art, the focus ring 36 generally has no active cooling function. When the plasma is processed, the upper plasma will continuously increase the temperature of the focus ring 36, and the effect of plasma treatment at different times will be due to the focus ring. The temperature changes gradually. Moreover, in order to prevent the electrostatic chuck from being corroded by the upper plasma, the size of the electrostatic chuck is smaller than that of the substrate, and a part of the focus ring extends below the substrate 30, so that the temperature of the cooling gas is controlled by the substrate within the radius of the electrostatic chuck. A relatively uniform temperature distribution can be achieved, and the temperature of the substrate above the peripheral focus ring 36 is significantly higher. This creates a distinct temperature gradient on the edge of the substrate, causing the substrate treatment around the edge region to be significantly different from the center region. The gap between the electrostatic chuck 34 and the focus ring 36 constitutes a passage along which a portion of the plasma reaches the underside of the substrate to corrode the side of the electrostatic chuck and the organic bonding layer between the electrostatic chuck 34 and the conductive base 33. 31, which in turn can damage the electrostatic chuck or even disable it.
為了改善空間上整個基片表面的處理均一性和不同時間基片處理的均一性，同時提高靜電夾盤的使用壽命，需要找到一種新的基片支撐裝置來實現上述目標。 In order to improve the uniformity of processing of the entire substrate surface in space and the uniformity of substrate processing at different times, while increasing the service life of the electrostatic chuck, it is necessary to find a new substrate supporting device to achieve the above object.
本發明解決的問題是找到一種新的基片支撐結構以改善空間上整個基片表面的處理均一性和不同時間基片處理的均一性，同時提高靜電夾盤的使用壽命。本發明提出一種用於安裝基片的基片安裝平台，包括：導電基座，導電基座上方固定有一個靜電夾盤，靜電夾盤上方包括一個托盤，所述托盤包括一平板部和一向上凸起部，其中平板部上表面包括直徑大於等基片的基片安裝區域，所述凸起部環繞所述基片安裝區域，其中所述靜電夾盤直徑大於所述基片的直徑 The problem solved by the present invention is to find a new substrate support structure to improve the uniformity of processing of the entire substrate surface in space and the uniformity of substrate processing at different times while improving the service life of the electrostatic chuck. The invention provides a substrate mounting platform for mounting a substrate, comprising: a conductive base, an electrostatic chuck is fixed on the conductive base, and the upper surface of the electrostatic chuck comprises a tray, the tray comprises a flat portion and an upward a raised portion, wherein an upper surface of the flat portion includes a substrate mounting region having a diameter larger than an equal substrate, the raised portion surrounding the substrate mounting region, wherein the electrostatic chuck diameter is larger than a diameter of the substrate
其中較佳的，托盤的平板部由絕緣材料製成，凸起部的上表面由半導體材料製成。所述托盤的凸起部可以是主體由絕緣材料製成，並在上表面塗覆有半導體材料薄層，也可以是托盤的凸起部主體由半導體材料製成，通過固定裝置固定到絕緣材料製成的平板部上，在實現靜電夾持的同時可以調節基片邊緣區域的電場分佈。 Preferably, the flat portion of the tray is made of an insulating material, and the upper surface of the projection is made of a semiconductor material. The convex portion of the tray may be made of an insulating material and coated with a thin layer of semiconductor material on the upper surface, or the convex portion of the tray may be made of a semiconductor material and fixed to the insulating material by a fixing device. On the prepared flat plate portion, the electric field distribution of the edge region of the substrate can be adjusted while achieving electrostatic chucking.
托盤的凸起部還包括一個延伸部向下或者向外周圍延伸，以防止電漿擴散到靜電夾盤側面。托盤周邊還可以圍繞有一個絕緣材料製成的隔離環，所述隔離環固定在所述導電基座上方。 The raised portion of the tray also includes an extension extending downwardly or outwardly to prevent plasma from diffusing to the side of the electrostatic chuck. The periphery of the tray may also surround an isolating ring of insulating material that is secured over the conductive base.
本發明還提出了一種電漿處理裝置，包括：一反應腔，反應腔內包括前述導電基座、靜電夾盤、托盤等部件的安裝平台，還包括反應氣體供應裝置和電漿發生裝置，所述電漿發生裝置用於激勵反應氣體，使反應氣體產生電漿體對利用電漿體對基片進行處理。本發明導電基座內還包括多個抬升頂針被驅動裝置驅動可以上下移動。本發明電漿處理裝置還可以包括一種特製多功能抬升頂針，所述多功能抬升頂針的頂端能穿過托盤對應位置開設的通孔以頂起托盤上方的基片，所述抬升頂針頂端下方還包括一擴展部能頂起開設有所述通孔的托盤。在採用多功能抬升頂針時可以實現本發明電漿處理裝置的運行方 法，包括步驟：A．放入待處理基片到所述托盤進行電漿處理；B．驅動所述驅動裝置使抬升頂針抬升至第一高度，所述基片被頂起；C．機械臂伸入基片與托盤之間的空間移除所述基片；多次循環進行所述步驟A-C後，驅動所述驅動裝置使抬升頂針抬升至第二高度，其中第二高度大於第一高度以頂起所述托盤，所述機械臂伸入托盤和靜電夾盤之間的空間移除所述托盤。 The invention also provides a plasma processing device, comprising: a reaction chamber comprising a mounting platform of the conductive base, an electrostatic chuck, a tray and the like, and a reaction gas supply device and a plasma generating device. The plasma generating device is for exciting the reaction gas, causing the reaction gas to generate a plasma to treat the substrate with the plasma. The conductive base of the present invention further includes a plurality of lifting thimbles that are driven by the driving device to be movable up and down. The plasma processing apparatus of the present invention may further comprise a special multifunctional lifting ejector pin, wherein the top end of the multifunctional lifting thimble can pass through a through hole opened at a corresponding position of the tray to lift the substrate above the tray, and the top of the lifting ejector pin is further An extension is included to jack up the tray in which the through hole is opened. The operating side of the plasma processing apparatus of the present invention can be realized when the multifunctional lifting ejector is used Law, including steps: A. Put the substrate to be processed into the tray for plasma treatment; B. Driving the driving device to raise the lifting ejector to a first height, the substrate being jacked up; C. The mechanical arm extends into the space between the substrate and the tray to remove the substrate; after performing the step AC multiple times, driving the driving device to raise the lifting ejector to a second height, wherein the second height is greater than the first The tray is lifted by the height, and the robot arm extends into the space between the tray and the electrostatic chuck to remove the tray.
本發明電漿處理裝置採用傳統的抬升頂針可以實現電漿處理裝置的另一種運行方法，包括步驟：放置待處理基片到一個托盤；通過機械臂將承載有基片托盤放入電漿處理裝置內的靜電夾盤固定，進行電漿處理；完成電漿處理後抬升所述抬升頂針頂起所述承載有基片的托盤；機械臂伸入所述托盤和靜電夾盤之間的空間移除所述托盤。 The plasma processing apparatus of the present invention can realize another operation method of the plasma processing apparatus by using a conventional lifting ejector, comprising the steps of: placing the substrate to be processed into a tray; and placing the substrate tray carrying the substrate into the plasma processing apparatus through the mechanical arm The electrostatic chuck inside is fixed and subjected to plasma treatment; after the plasma treatment is completed, the lifting thimble is lifted up to lift up the tray carrying the substrate; the mechanical arm extends into the space between the tray and the electrostatic chuck to remove The tray.
10‧‧‧反應腔 10‧‧‧Reaction chamber
20‧‧‧氣源 20‧‧‧ gas source
30‧‧‧基片 30‧‧‧Substrate
31‧‧‧有機粘接層 31‧‧‧Organic bonding layer
32‧‧‧隔離環 32‧‧‧Isolation ring
33‧‧‧導電基座 33‧‧‧Conducting base
330‧‧‧冷卻管道 330‧‧‧Cooling pipe
34‧‧‧靜電夾盤 34‧‧‧Electrostatic chuck
35‧‧‧射頻電源 35‧‧‧RF power supply
36‧‧‧聚焦環 36‧‧‧ Focus ring
37‧‧‧冷卻氣體源 37‧‧‧Cooling gas source
40‧‧‧氣體分佈裝置 40‧‧‧ gas distribution device
130‧‧‧基片 130‧‧‧Substrate
131‧‧‧粘接層 131‧‧‧ bonding layer
133、233‧‧‧導電基座 133, 233‧‧‧ conductive base
134、234‧‧‧靜電夾盤 134, 234‧‧‧ Electrostatic chuck
135‧‧‧抬升頂針 135‧‧‧lifting thimble
136、136’‧‧‧托盤 136, 136’‧‧‧Tray
1360‧‧‧凹槽 1360‧‧‧ Groove
1361‧‧‧固定環 1361‧‧‧Fixed ring
136a、136a’‧‧‧平板部 136a, 136a’‧‧‧ Flat section
136b‧‧‧凸起部 136b‧‧‧ raised parts
136b’‧‧‧凸起環 136b’‧‧‧ raised ring
231‧‧‧材料層 231‧‧‧Material layer
236‧‧‧凸起部 236‧‧ ‧ raised parts
236c‧‧‧延展部 236c‧‧‧Extension Department
D‧‧‧直徑 D‧‧‧diameter
圖1是習知技術電漿處理裝置的結構示意圖；圖2是習知技術導電基座結構示意圖；圖3是本發明導電基座結構示意圖；圖4a是本發明導電基座在基片移出時的示意圖；圖4b是本發明抬升頂針抬升基片和托盤的示意圖；圖5是本發明導電基座第二實施例示意圖；圖6是本發明托盤邊緣區域組合結構示意圖。 1 is a schematic structural view of a conventional plasma processing apparatus; FIG. 2 is a schematic structural view of a conductive base of the prior art; FIG. 3 is a schematic structural view of the conductive base of the present invention; and FIG. 4a is a conductive base of the present invention when the substrate is removed. Figure 4b is a schematic view of the raised thimble lifting substrate and the tray of the present invention; Figure 5 is a schematic view of the second embodiment of the conductive pedestal of the present invention; Figure 6 is a schematic view of the combined structure of the edge region of the tray of the present invention.
本發明要解決基片在電漿處理過程中不同區域溫度的不均勻，同時要防止基片背面靜電夾盤34的側壁被腐蝕，提出用一個新的托盤放置在靜電夾盤上用大尺寸的靜電夾盤對托盤進行溫度控制。如圖3所示為本發明第一實施例，導電基座133上方包括粘接層131，粘接層131上方包括靜電夾盤134，靜電夾盤上方固定有本發明的托盤136。本發明托盤136包括平板部136a和凸起部136b，其中凸起部136b和平板部136a由絕緣材料如SiO2、Al2O3、AlN等製成，凸起部136b上表面在絕緣材料的主體體材料上還鍍有一層半導體材料如Si、SiC等以改善基片邊緣區域的電場分佈均勻性。凸起部136b和平板部136a整合一體，兩者的下表面具有共同的平面放置在靜電夾盤上表面上。待處理基片130放置在托盤136的平板部136a上，托盤的凸起部136b圍繞在基片周邊，實現習知技術圖2中聚焦環36的功能。 The invention is to solve the unevenness of the temperature of the substrate in different regions during the plasma processing, and at the same time to prevent the sidewall of the electrostatic chuck 34 on the back of the substrate from being corroded, and propose to use a new tray to be placed on the electrostatic chuck with a large size. The electrostatic chuck controls the temperature of the tray. As shown in FIG. 3, in the first embodiment of the present invention, the conductive base 133 includes an adhesive layer 131 thereon. The upper surface of the adhesive layer 131 includes an electrostatic chuck 134. The tray 136 of the present invention is fixed above the electrostatic chuck. The tray 136 of the present invention includes a flat plate portion 136a and a convex portion 136b, wherein the convex portion 136b and the flat plate portion 136a are made of an insulating material such as SiO2, Al2O3, AlN, or the like, and the upper surface of the convex portion 136b is on the main body material of the insulating material. A layer of a semiconductor material such as Si, SiC or the like is also plated to improve the uniformity of electric field distribution in the edge region of the substrate. The boss portion 136b and the flat plate portion 136a are integrated, and the lower surfaces of the two have a common plane placed on the upper surface of the electrostatic chuck. The substrate to be processed 130 is placed on the flat plate portion 136a of the tray 136, and the convex portion 136b of the tray surrounds the periphery of the substrate to realize the function of the focus ring 36 of the prior art Fig. 2.
本發明中基片130放置在托盤136內，而且托盤的凸起部136b圍繞基片130，所以托盤的直徑D是大於基片直徑(300mm/200mm)的，相應的托盤下方的靜電夾盤134的直徑也是大於基片的。與圖2所示的習知技術相同，本發明靜電夾盤134上表面具有冷卻氣體流通的通路，用於冷卻位於靜電夾盤134上方的托盤136。托盤136下表面是一個均一的平面所以整個托盤136下表面都能夠得到很好的溫度控制，包括凸起部136b也能維持在比較穩定的溫度。托盤136在整個平板部136a上具有均一的溫度，位於平板部136a上方的基片也能獲得均一的溫度。習知技術中聚焦環36由於暴露於電漿而又沒有有效散熱機構導致的熱量積累也被大尺寸的靜電夾盤134有效解決了。 In the present invention, the substrate 130 is placed in the tray 136, and the raised portion 136b of the tray surrounds the substrate 130, so the diameter D of the tray is larger than the diameter of the substrate (300 mm/200 mm), and the electrostatic chuck 134 below the corresponding tray. The diameter is also larger than the substrate. As with the prior art shown in FIG. 2, the upper surface of the electrostatic chuck 134 of the present invention has a passage for cooling gas to cool the tray 136 located above the electrostatic chuck 134. The lower surface of the tray 136 is a uniform plane so that the lower surface of the entire tray 136 can be well temperature controlled, including the raised portion 136b being maintained at a relatively stable temperature. The tray 136 has a uniform temperature over the entire flat plate portion 136a, and the substrate above the flat plate portion 136a can also obtain a uniform temperature. In the prior art, the accumulation of heat caused by the focus ring 36 due to exposure to the plasma without an effective heat dissipation mechanism is also effectively solved by the large size electrostatic chuck 134.
習知技術在基片處理完需要取出時需要用抬升頂針(lift pin)升起基片，然後再由機械手伸入抬升後的基片下方將基片移走，本發明可以在托盤136的平板部136a上開設多個通孔以使抬升頂針穿過這些通孔來實現基片的 抬升。本發明也可以是如圖4a所示的方式移除基片130，如圖4a所示托盤上未開設多個通孔，多個抬升頂針135直接支撐在托盤下表面上將托盤頂起，機械手(圖中未示出)伸入托盤下方將托盤連同托盤內的基片一起移出電漿處理裝置。 The prior art requires lifting the substrate with a lift pin when the substrate needs to be removed, and then the substrate is removed by the robot extending under the raised substrate. The present invention can be applied to the tray 136. a plurality of through holes are formed in the flat plate portion 136a to allow the lifting thimble to pass through the through holes to realize the substrate. Raise. The present invention may also remove the substrate 130 in the manner shown in FIG. 4a. As shown in FIG. 4a, a plurality of through holes are not formed in the tray, and the plurality of lifting thimbles 135 are directly supported on the lower surface of the tray to lift the tray. A hand (not shown) extends under the tray to move the tray out of the plasma processing apparatus along with the substrate in the tray.
具體抬升的機構可以是如圖4b所示的具有不同直徑的抬升頂針135，靜電夾盤134和托盤136上也具有不同口徑的通孔，靜電夾盤上通孔的口徑大於抬升頂針的直徑。圖4b中抬升頂針135頂部具有較小直徑，可以穿過托盤上對應的通孔支撐基片，使托盤136上方的基片被抬升，隨後被伸入托盤和基片之間的機械臂移走；當需要抬升托盤136時可以增加抬升頂針135的抬升距離，使頂針下方具有較大直徑的部分穿過靜電夾盤上的通孔與托盤136下表面通孔周圍的的區域相接觸並實現對托盤136的抬升。採用如圖4b所示的抬升結構後可以根據需要選擇處理完基片後只移走基片而不移除托盤或者單獨移除托盤。本發明在完成多次電漿處理後，托盤被腐蝕需要維護時可以利用現有機械臂簡單的移除待維護托盤放入新的托盤136。本發明托盤的材料為絕緣材料而且厚度可以達到1mm或以上，其強度足以被抬升頂針頂起而不會造成托盤底部破裂。習知技術中聚焦環36由於直接暴露於電漿體，所以在運行一段時間後期表明材料會被嚴重腐蝕，需要被替換或修復，但是這些替換或修復成本很高，需要停機並打開反應器10的頂蓋。修復或替換完成後還需要測試和調整使得各項參數是與反應腔打開前相同，所以習知技術的聚焦環必須付很高的出時間成本和材料成本。採用本發明方法可以移出托盤，所以托盤上起聚焦環作用的凸起部136b可以一同被機械手移出反應腔，不需要打開反應器頂蓋。在反應腔外可以進行修補，將被電漿腐蝕掉的半導體材料如Si、SiC等重新沉積一層，達到要求的厚度後可以再次放入反應腔進行使用。 The specific lifting mechanism may be a lifting thimble 135 having different diameters as shown in FIG. 4b. The electrostatic chuck 134 and the tray 136 also have through holes of different diameters, and the diameter of the through hole on the electrostatic chuck is larger than the diameter of the lifting thimble. In Fig. 4b, the top of the raised thimble 135 has a smaller diameter, and the substrate can be supported through the corresponding through holes in the tray so that the substrate above the tray 136 is lifted and then removed by the robotic arm extending between the tray and the substrate. When the tray 136 needs to be lifted, the lifting distance of the lifting ejector pin 135 can be increased, so that the portion having the larger diameter under the thimble passes through the through hole on the electrostatic chuck and contacts the area around the through hole of the lower surface of the tray 136 and realizes The tray 136 is lifted up. After using the lifting structure as shown in Fig. 4b, it is possible to select only the substrate to be removed after the substrate is processed, without removing the tray or separately removing the tray. After the completion of multiple plasma treatments, the tray is corroded and requires maintenance. The existing robot arm can be used to simply remove the tray to be maintained and put into the new tray 136. The material of the tray of the present invention is an insulating material and can have a thickness of 1 mm or more, and is strong enough to be lifted up by the ejector pin without causing cracking of the bottom of the tray. In the prior art, since the focus ring 36 is directly exposed to the plasma, it indicates that the material is severely corroded at a later stage of operation and needs to be replaced or repaired, but these replacement or repair costs are high, and it is necessary to shut down and open the reactor 10 The top cover. After the repair or replacement is completed, it needs to be tested and adjusted so that the parameters are the same as before the reaction chamber is opened, so the focus ring of the prior art must pay a high time cost and material cost. The tray can be removed by the method of the present invention, so that the convex portion 136b acting as a focus ring on the tray can be removed from the reaction chamber by the robot together without opening the reactor top cover. Repairing outside the reaction chamber, the semiconductor material such as Si, SiC, etc., which is etched away by the plasma, may be re-deposited to a desired thickness and then placed in the reaction chamber for use again.
本發明托盤也可以是多個部件組合而成的，比如圖6所示的托盤平板部136a’為一個單獨部件，包括一個下表面與靜電夾盤上表面平整接觸，以及一個容納基片的安裝區域上表面，在平板部136a’安裝區域周邊還包括一個向上凸起是固定環1361。一個單獨的凸起環136b’包括與圖三中凸起部136b相同的上表面，以及一個帶有凹槽1360的下表面，凸起環136b’通過下表面的凹槽1360與所述托盤平板部136a’上的固定環1361相互卡固構成本發明的托盤136’。其中平板部136a’是有絕緣材料構成的，以保證靜電夾盤對基片的吸附作用，凸起環136b’可以是有半導體材料構成的以調節基片外周圍區域的電場分佈。本發明托盤也可以是其它多種結構的的複數個部件組合而成。 The tray of the present invention may also be a combination of a plurality of components, such as the tray flat portion 136a' shown in Fig. 6 being a separate component, including a lower surface in flat contact with the upper surface of the electrostatic chuck, and a mounting of the receiving substrate. The upper surface of the region further includes an upward projection on the periphery of the mounting portion of the flat portion 136a' which is a fixing ring 1361. A single raised ring 136b' includes the same upper surface as the raised portion 136b of Figure 3, and a lower surface with a recess 1360' through which the recessed surface 136b' passes through the lower surface of the recess 1360. The retaining rings 1361 on the portion 136a' are secured to each other to form the tray 136' of the present invention. The flat plate portion 136a' is made of an insulating material to ensure the adsorption of the electrostatic chuck on the substrate. The convex ring 136b' may be made of a semiconductor material to adjust the electric field distribution of the outer peripheral region of the substrate. The tray of the present invention may also be a combination of a plurality of components of various other configurations.
由於本發明在靜電夾盤電極和基片之間多了一層絕緣材料製成的托盤平板部136a，所以在靜電夾持過程中也需要更大的直流電壓才能穩定的夾持處理基片130，現有靜電夾持的電壓已經達到700-3000V，為了適應本發明結構的機台需要將直流電壓的電壓提升到1000V-5000V以上，這不會對成本和可靠性造成很大負擔，相對因採用本發明結構所改善的均一性來說效益仍然明顯。 Since the present invention has a plurality of tray flat portions 136a made of an insulating material between the electrostatic chuck electrode and the substrate, a larger DC voltage is required in the electrostatic chucking process to stably hold the processing substrate 130. The voltage of the existing electrostatic clamping has reached 700-3000V. In order to adapt to the structure of the machine of the present invention, the voltage of the DC voltage needs to be raised to 1000V-5000V or more, which does not impose a great burden on cost and reliability. The benefits are still significant in terms of improved uniformity of the inventive structure.
本發明採用整合的托盤使得電漿體不會從凸起部136b與基片之間的縫隙向下擴散腐蝕靜電夾盤，相對習知技術提高了靜電夾盤的使用壽命。托盤136的外側沒有進一步覆蓋靜電夾盤的側面，所以仍可能有電漿向下擴散並破壞靜電夾盤134或者靜電夾盤134和導電基座133之間的粘接層131。為防止靜電夾盤外側壁被腐蝕可以進一步改進本發明提出第二實施例。如圖5所示為本發明第二實施例，基本結構與圖3所示的第一實施例相同，主要的區別是在托盤的凸起部236周邊還包括一個向下的延展部236c。通過延展部236c的設置可以遮蓋容易被腐蝕的靜電夾盤234的側壁或者靜電夾盤下方的粘接材料層 231。延展部236c也可以是向外延伸的，與固定在導電基座233向外伸展部分上方的絕緣材料製成的隔離環配合，遮擋電漿流入的路徑，其中隔離環的位置與材料與習知技術中隔離環類似。 The present invention employs an integrated tray such that the plasma does not diffuse down from the gap between the raised portion 136b and the substrate to corrode the electrostatic chuck, which increases the useful life of the electrostatic chuck relative to conventional techniques. The outside of the tray 136 does not further cover the side of the electrostatic chuck, so there may still be plasma down-diffusion and damage to the electrostatic chuck 134 or the bonding layer 131 between the electrostatic chuck 134 and the conductive pedestal 133. The second embodiment of the present invention can be further improved in order to prevent corrosion of the outer side wall of the electrostatic chuck. 5 is a second embodiment of the present invention, the basic structure is the same as that of the first embodiment shown in FIG. 3, the main difference being that a downwardly extending portion 236c is included around the raised portion 236 of the tray. The side wall of the electrostatic chuck 234 which is easily corroded or the adhesive material layer under the electrostatic chuck can be covered by the arrangement of the extension portion 236c. 231. The extension portion 236c may also be outwardly extended to cooperate with an isolation ring made of an insulating material fixed above the outwardly extending portion of the conductive base 233 to block the path of the plasma inflow, wherein the position and material of the spacer ring and the conventional structure The isolation ring is similar in technology.
本發明的托盤136的平板部136a其直徑略大於基片直徑，在利用機械臂放置基片到托盤時不會由於微小的位置誤差使基片無法平放在平板部136a上。其中靜電夾盤的直徑小於等於所述托盤的外徑，也就是托盤延展部136b外側壁的直徑，這樣可以防止電漿穿過托盤腐蝕下方的靜電夾盤。 The flat plate portion 136a of the tray 136 of the present invention has a diameter slightly larger than the diameter of the substrate, and the substrate cannot be placed flat on the flat plate portion 136a due to minute positional errors when the substrate is placed by the robot arm to the tray. Wherein the diameter of the electrostatic chuck is less than or equal to the outer diameter of the tray, that is, the diameter of the outer side wall of the tray extension 136b, which prevents the plasma from passing through the tray to corrode the electrostatic chuck below.
雖然本發明披露如上，但本發明並非限定於此。任何本領域技術人員，在不脫離本發明的精神和範圍內，均可作各種更動與修改，因此本發明的保護範圍應當以請求項所限定的範圍為准。 Although the present invention has been disclosed above, the present invention is not limited thereto. Any changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be determined by the scope of the claims.
130‧‧‧基片 130‧‧‧Substrate
131‧‧‧粘接層 131‧‧‧ bonding layer
133‧‧‧導電基座 133‧‧‧Conducting base
134‧‧‧靜電夾盤 134‧‧‧Electrostatic chuck
136‧‧‧托盤 136‧‧‧Tray
136a‧‧‧平板部 136a‧‧‧ Flat section
136b‧‧‧凸起部 136b‧‧‧ raised parts
D‧‧‧直徑 D‧‧‧diameter
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| US10923385B2 (en) * | 2016-11-03 | 2021-02-16 | Lam Research Corporation | Carrier plate for use in plasma processing systems |
| CN107435141A (en) * | 2017-08-04 | 2017-12-05 | 武汉华星光电技术有限公司 | Chemical vapor depsotition equipment |
| JP7083463B2 (en) * | 2018-02-23 | 2022-06-13 | 株式会社日立ハイテク | Vacuum processing equipment |
| KR102124738B1 (en) | 2019-06-13 | 2020-06-18 | 가부시키가이샤 아드맵 | Regeneration method of film formation structure and regeneration film formation structure |
| JP6598132B1 (en) * | 2019-06-13 | 2019-10-30 | 株式会社アドマップ | Method for regenerating film forming structure and regenerating film forming structure |
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| CN102543816A (en) * | 2010-12-28 | 2012-07-04 | 东京毅力科创株式会社 | Static sucker |
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| CN203055884U (en) * | 2012-12-04 | 2013-07-10 | 赖守亮 | Chip substrate bearing device used for vacuum plasma technology |
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| CN102543816A (en) * | 2010-12-28 | 2012-07-04 | 东京毅力科创株式会社 | Static sucker |
| CN103140922A (en) * | 2011-04-13 | 2013-06-05 | 松下电器产业株式会社 | Plasma processing apparatus and plasma processing method |
| CN102956533A (en) * | 2011-08-26 | 2013-03-06 | 新光电气工业株式会社 | Electrostatic chuck and semiconductor/liquid crystal manufacturing equipment |
| CN203055884U (en) * | 2012-12-04 | 2013-07-10 | 赖守亮 | Chip substrate bearing device used for vacuum plasma technology |
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