TWI573000B - Pattern exposure device and pattern exposure method - Google Patents

Pattern exposure device and pattern exposure method Download PDF

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Publication number
TWI573000B
TWI573000B TW102109072A TW102109072A TWI573000B TW I573000 B TWI573000 B TW I573000B TW 102109072 A TW102109072 A TW 102109072A TW 102109072 A TW102109072 A TW 102109072A TW I573000 B TWI573000 B TW I573000B
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substrate
exposed
exposure lithography
exposure
lithography apparatus
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TW102109072A
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TW201344380A (en
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鶴井弘則
橋口昭浩
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亞得科技工程有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

曝光微影裝置以及曝光微影方法 Exposure lithography device and exposure lithography method

本發明是有關於一種曝光微影裝置以及曝光微影方法。本發明特別是有關於一種對基板微影圖像的曝光微影裝置以及曝光微影方法。 The present invention relates to an exposure lithography apparatus and an exposure lithography method. More particularly, the present invention relates to an exposure lithography apparatus for a lithographic image of a substrate and an exposure lithography method.

近年來，關於將平面基板作為被曝光基板而形成電路圖案的曝光微影裝置，開發出一種不使用轉印遮罩而直接將微影光照射至基板來微影電路圖案的曝光微影裝置。然而，在對要求高解析度的基板微影電路圖案的情況下，存在如下情形：孔加工中所附著的灰塵及移動過程中附著於孔的灰塵等會掉落至其他基板上，或因抗蝕劑(resist)塗佈等的加工的加熱而引起孔周邊變形。該情況下，微影於基板的一面(以下，亦稱作「第1面」)的電路圖案與微影於與上述一面相對向的另一面(以下，亦稱作「第2面」)的電路圖案的相對位置發生偏移。 In recent years, an exposure lithography apparatus that forms a circuit pattern by using a planar substrate as an exposed substrate has developed an exposure lithography apparatus that directly irradiates lithographic light to a substrate to form a lithographic circuit pattern without using a transfer mask. However, in the case of a substrate lithography circuit pattern requiring high resolution, there are cases where dust adhering to the hole processing and dust adhering to the hole during the movement may fall onto other substrates, or Heating of the processing such as resist coating causes deformation of the periphery of the hole. In this case, the circuit pattern of the lithography on one side of the substrate (hereinafter also referred to as "first surface") and the lithography on the other surface facing the one surface (hereinafter also referred to as "second surface") The relative position of the circuit pattern is shifted.

作為解決該問題的技術，而提出有將電路圖案的微影所需的對準用的標記微影在被曝光基板的第1面及第2面的曝光微 影裝置。關於該曝光微影裝置的技術，在日本專利特開2008-292915號公報中，揭示了如下的曝光微影裝置：對被曝光基板的第1面及第2面分別微影第1對準用的標記及第2對準用的標記，並根據第1對準用的標記及第2對準用的標記，將電路圖案微影於基板的第1面及第2面。 As a technique for solving this problem, there has been proposed an exposure micrograph of alignment for lithography of a circuit pattern on the first surface and the second surface of the substrate to be exposed. Shadow device. In the technique of the exposure lithography apparatus, Japanese Laid-Open Patent Publication No. 2008-292915 discloses an exposure lithography apparatus for lithographically aligning the first surface and the second surface of the substrate to be exposed. The mark and the second alignment mark are lithographically patterned on the first surface and the second surface of the substrate in accordance with the first alignment mark and the second alignment mark.

而且，美國專利6,701,197 B2號說明書中，揭示了如下的曝光微影裝置：使用與平台處於已知的位置關係的被固定的紫外線光源，與被曝光基板的第1面的曝光同時地在第2面形成對準用的標記。 Further, in the specification of US Pat. No. 6,701,197 B2, an exposure lithography apparatus is disclosed in which a fixed ultraviolet light source having a known positional relationship with a stage is used, simultaneously with exposure of the first surface of the substrate to be exposed. The face forms a mark for alignment.

然而，上述美國專利6,701,197 B2號說明書中所揭示的曝光微影裝置中，紫外線光源已被固定。因此，不會發生因紫外線光源的工作槽而被曝光基板自平台浮起等的現象。然而，當載置於平台的被曝光基板未被確實地固定於端部時，有基板發生翹曲或自平台浮起的可能性。該情況下，有第2面的標記形狀變得不穩定的可能性。 However, in the exposure lithography apparatus disclosed in the above-mentioned U.S. Patent No. 6,701,197 B2, the ultraviolet light source has been fixed. Therefore, there is no phenomenon that the exposed substrate is lifted from the stage due to the working groove of the ultraviolet light source. However, when the exposed substrate placed on the stage is not surely fixed to the end portion, there is a possibility that the substrate is warped or floated from the stage. In this case, there is a possibility that the mark shape of the second surface becomes unstable.

本發明提供曝光微影裝置以及曝光微影方法，可防止由被曝光基板的端部的翹曲或浮起等而引起的表背的位置對準用的標記的品質的降低。 The present invention provides an exposure lithography apparatus and an exposure lithography method, which can prevent deterioration of the quality of marks for alignment of the front and back caused by warping or floating of the end portion of the substrate to be exposed.

本發明的第1實施方式為一種曝光微影裝置，包括：平 台，載置被曝光基板；固定部，自預定的第1位置向第2位置移動，於第2位置，將載置於平台的被曝光基板的端部夾持並固定於上述固定部與該平台之間；以及微影部，在藉由固定部而使端部固定的狀態下，對被曝光基板的第1面進行曝光，藉此將預定的電路圖案微影於該第1面上；以及形成部，與固定部的移動聯動地移動，在藉由該固定部而使端部固定的狀態下，在被曝光基板的與第1面相對向的第2面上形成預定的標記。 A first embodiment of the present invention is an exposure lithography apparatus comprising: And mounting the substrate to be exposed; the fixing portion moves from the predetermined first position to the second position, and clamps and fixes the end portion of the substrate to be exposed placed on the platform to the fixing portion and the second position And a lithographic portion, wherein the first surface of the substrate to be exposed is exposed while the end portion is fixed by the fixing portion, thereby dicing a predetermined circuit pattern on the first surface; And the forming portion moves in conjunction with the movement of the fixing portion, and in a state where the end portion is fixed by the fixing portion, a predetermined mark is formed on the second surface of the substrate to be exposed facing the first surface.

根據本發明的第1實施方式的曝光微影裝置，藉由平台載置被曝光基板，藉由自預定的第1位置向第2位置移動的固定部，於第2位置將載置於平台的被曝光基板的端部夾持並固定於上述固定部與該平台之間。 According to the exposure lithography apparatus of the first embodiment of the present invention, the substrate to be exposed is placed on the platform, and the fixed portion that has moved from the predetermined first position to the second position is placed on the platform at the second position. The end of the exposed substrate is sandwiched and fixed between the fixing portion and the platform.

此處，本發明的第1實施方式中，在藉由固定部而端部固定的狀態下對被曝光基板的第1面進行曝光，藉此利用微影部將預定的電路圖案微影於該第1面。進而，藉由與固定部的移動聯動地移動的形成部，在藉由該固定部而端部固定的狀態下的被曝光基板的與第1面相對向的第2面形成預定的標記。 In the first embodiment of the present invention, the first surface of the substrate to be exposed is exposed in a state where the end portion is fixed by the fixing portion, whereby the predetermined circuit pattern is micro-imaged by the lithography portion. The first side. Further, the forming portion that moves in conjunction with the movement of the fixing portion forms a predetermined mark on the second surface of the substrate to be exposed that faces the first surface in a state where the end portion is fixed by the fixing portion.

亦即，本發明的第1實施方式中，在被曝光基板載置於平台，且被曝光基板的端部藉由固定部而固定的狀態下，在被曝光基板的第1面已微影出電路圖案，另一方面，在被曝光基板的第2面形成著標記。而且，本發明的第1實施方式中，當在第2面上微影電路圖案時，藉由形成於該第2面的標記來調整微影位置，藉此進行被曝光基板的表背的位置對準。 In the first embodiment of the present invention, the exposed substrate is placed on the stage, and the end portion of the exposed substrate is fixed by the fixing portion, and the first surface of the substrate to be exposed is slightly imaged. The circuit pattern, on the other hand, forms a mark on the second surface of the substrate to be exposed. Further, in the first embodiment of the present invention, when the circuit pattern is formed on the second surface, the position of the front and back of the substrate to be exposed is adjusted by adjusting the position of the lithography by the mark formed on the second surface. alignment.

如此，根據本發明的第1實施方式的曝光微影裝置，可在被曝光基板的端部藉由固定部而固定的狀態下，在被曝光基板的第2面形成位置對準用的標記。結果，本發明的第1實施方式中，可防止由被曝光基板的端部的翹曲或浮起等引起的表背(第1面及第2面)的位置對準用的標記的品質的降低。 As described above, according to the exposure lithography apparatus of the first embodiment of the present invention, the alignment mark can be formed on the second surface of the substrate to be exposed in a state where the end portion of the substrate to be exposed is fixed by the fixing portion. As a result, in the first embodiment of the present invention, it is possible to prevent deterioration of the quality of the marks for alignment of the front and back (first surface and second surface) due to warping or floating of the end portion of the substrate to be exposed. .

另外，本發明的第2實施方式在上述第1實施方式中，可更包括對形成部的位置進行測量的位置測量部。藉此，本發明的第2實施方式中，可使用所測量的形成部的位置來調整對第2面微影電路圖案的位置。 Further, in the second embodiment of the present invention, the first embodiment of the present invention may further include a position measuring unit that measures the position of the forming portion. As a result, in the second embodiment of the present invention, the position of the second surface lithography circuit pattern can be adjusted using the measured position of the forming portion.

而且，本發明的第3實施方式在上述第2實施方式中，可在平台形成貫通孔，且由夾板構成固定部，上述夾板通過貫通孔而向基板載置側突出，且將被曝光基板固定。藉此，本發明的第3實施方式可將被曝光基板牢固地固定於平台。 Further, in the second embodiment of the present invention, in the second embodiment, the through hole may be formed in the land, and the fixing portion may be formed by the cleat. The plate protrudes toward the substrate mounting side through the through hole, and the exposed substrate is fixed. . Thereby, in the third embodiment of the present invention, the substrate to be exposed can be firmly fixed to the stage.

而且，本發明的第4實施方式在上述第3實施方式中，形成部可通過貫通孔而在被曝光基板的第2面形成標記。藉此，本發明的第4實施方式中，無須在平台設置新的貫通孔，便可在被曝光基板的第2面形成標記。 Further, in the fourth embodiment of the present invention, in the third embodiment, the forming portion can form a mark on the second surface of the substrate to be exposed through the through hole. As a result, in the fourth embodiment of the present invention, it is possible to form a mark on the second surface of the substrate to be exposed without providing a new through hole in the stage.

而且，本發明的第5實施方式在上述第4實施方式中，形成部可具有出射紫外線光束的光源，使自該光源出射的紫外線光束通過貫通孔而照射至被曝光基板的第2面，藉此形成標記。藉此，本發明的第5實施方式中，可在被曝光基板的第2面高精度地形成標記。 According to a fifth aspect of the present invention, in the fourth aspect, the forming portion may have a light source that emits an ultraviolet light beam, and the ultraviolet light beam emitted from the light source is irradiated to the second surface of the substrate to be exposed through the through hole. This forms a mark. As a result, in the fifth embodiment of the present invention, the mark can be formed with high precision on the second surface of the substrate to be exposed.

而且，本發明的第6實施方式在上述第2實施方式至第5實施方式中，位置測量部可在各個形成部具有基準部，其中該基準部與形成部的移動聯動地移動，並作為形成部的位置的基準，且該基準部設置於如下位置，即，在平台上載置著被曝光基板的狀態下露出於該被曝光基板的外部的位置。藉此，本發明的第6實施方式可簡單地測量形成部的位置。 According to the sixth embodiment of the present invention, in the second to fifth embodiments, the position measuring unit may have a reference portion in each of the forming portions, wherein the reference portion moves in conjunction with the movement of the forming portion, and is formed as a reference portion. The reference of the position of the portion is provided at a position where the exposed substrate is placed on the outside of the substrate to be exposed while the exposed substrate is placed on the platform. Thereby, the sixth embodiment of the present invention can easily measure the position of the forming portion.

而且，本發明的第7實施方式在上述第6實施方式中，基準部可經由貫通孔而露出在外部。藉此，本發明的第7實施方式無須在平台設置新的貫通孔，便可測量形成部的位置。 Further, in the seventh embodiment of the present invention, in the sixth embodiment, the reference portion can be exposed to the outside via the through hole. As a result, in the seventh embodiment of the present invention, the position of the forming portion can be measured without providing a new through hole in the platform.

而且，本發明的第8實施方式在上述第6實施方式或第5實施方式中，可更包括：記憶機構，記憶相對應的各個形成部及基準部的位置關係；測量機構，對基準部的位置進行測量；以及導出機構，根據藉由測量機構測量的基準部的位置與記憶於記憶機構的位置關係而導出形成部的位置。藉此，本發明的第8實施方式可簡單地測量形成部的位置。 Further, in the eighth embodiment or the fifth embodiment of the present invention, the sixth embodiment or the fifth embodiment may further include: a memory mechanism that memorizes a positional relationship between each of the corresponding forming portions and the reference portion; and a measuring mechanism for the reference portion The position is measured; and the deriving mechanism derives the position of the forming portion based on the positional relationship of the reference portion measured by the measuring mechanism and the positional relationship stored in the memory mechanism. Thereby, the eighth embodiment of the present invention can easily measure the position of the forming portion.

而且，本發明的第9實施方式在上述第8實施方式中，基準部可為多個位置識別用標記，記憶機構分別記憶多個位置識別用標記的每一者與形成部的位置關係，測量機構與被微影電路圖案的位置處於已知的關係，並對多個位置識別用標記的每一者的位置進行測量，導出機構根據由測量機構測量的各個位置識別用標記的位置與記憶於記憶機構的位置關係而導出形成部的位置。藉此，本發明的第9實施方式可更簡單地測量形成部的位置。 Further, in the ninth embodiment of the present invention, the reference portion may be a plurality of position recognition marks, and the memory means stores the positional relationship between each of the plurality of position recognition marks and the formation portion, and measures The mechanism is in a known relationship with the position of the lithographic circuit pattern, and the position of each of the plurality of position recognition marks is measured, and the derivation mechanism is based on the position and memory of each position identification mark measured by the measuring mechanism. The position of the formation mechanism is derived by the positional relationship of the memory mechanism. Thereby, the ninth embodiment of the present invention can more easily measure the position of the forming portion.

而且，本發明的第10實施方式在上述第9實施方式中，平台可沿規定方向來回移動，在各個露出部，將多個位置識別用標記的每一者以在相對於平台的來回移動方向交叉的方向上並列的方式而設置。藉此，本發明的第10實施方式可在相同的時機(timing)測量多個位置識別用標記。 Further, in a ninth embodiment of the present invention, in the ninth embodiment, the platform is movable back and forth in a predetermined direction, and each of the plurality of position recognition marks is moved in a direction of reciprocating relative to the platform at each of the exposed portions. Set in the direction of the cross direction. Thereby, in the tenth embodiment of the present invention, a plurality of position recognition marks can be measured at the same timing.

而且，本發明的第11實施方式在上述實施方式中，形成部可設置為相對於平台而在預定的範圍內可移動。藉此，本發明的第11實施方式可在與被曝光基板的尺寸相應的適當位置形成標記。 Further, in the eleventh embodiment of the present invention, in the above embodiment, the forming portion may be provided to be movable within a predetermined range with respect to the platform. Thereby, in the eleventh embodiment of the present invention, the mark can be formed at an appropriate position corresponding to the size of the substrate to be exposed.

而且，本發明的第12實施方式在上述第6實施方式或第5實施方式中，可在平台上設置另一固定部，該另一固定部自第1面或者第2面的方向固定被曝光基板。藉此，本發明的第12實施方式中，可進而防止由被曝光基板的端部的翹曲或浮起等引起的表背的位置對準用的標記的品質的降低。 Further, in the twelfth embodiment of the present invention, in the sixth embodiment or the fifth embodiment, another fixing portion may be provided on the platform, and the other fixing portion is fixedly exposed from the direction of the first surface or the second surface. Substrate. According to the twelfth embodiment of the present invention, it is possible to further prevent deterioration of the quality of the mark for alignment of the front and back caused by warpage or lifting of the end portion of the substrate to be exposed.

而且，本發明的第13實施方式在上述第12實施方式中，另一固定部可藉由自第1面或者第2面的方向吸附被曝光基板而固定於平台。藉此，本發明的第13實施方式中，可進而防止由被曝光基板的端部的翹曲或浮起等引起的表背的位置對準用的標記的品質的降低。 Further, in the twelfth embodiment of the present invention, in the twelfth embodiment, the other fixing portion may be fixed to the stage by suctioning the substrate to be exposed from the direction of the first surface or the second surface. According to the thirteenth embodiment of the present invention, it is possible to further prevent deterioration of the quality of the mark for alignment of the front and back caused by warping or lifting of the end portion of the substrate to be exposed.

本發明的第14實施方式為一種曝光微影方法，是曝光微影裝置的曝光微影方法，包括：平台，載置被曝光基板；固定部，自預定的第1位置向第2位置移動，將載置於平台的被曝光 基板的端部夾持並固定於上述固定部與該平台之間；微影部，在藉由固定部而使端部固定的狀態下，對被曝光基板的第1面進行曝光，藉此將預定的電路圖案微影於該第1面上；形成部，與固定部的移動聯動地移動，在藉由該固定部而使端部固定的狀態下，在被曝光基板的與第1面相對向的第2面形成預定的標記；以及作為形成部的位置的基準的基準部，與形成部的移動聯動地移動；上述曝光微影方法包括：記憶步驟，記憶相對應的各個形成部及基準部的位置關係；位置測量步驟，對基準部的位置進行測量；以及導出步驟，根據測量步驟中測量的基準部的位置與記憶步驟中記憶的位置關係而導出形成部的位置。 A fourteenth embodiment of the present invention is an exposure lithography method, which is an exposure lithography method of an exposure lithography apparatus, comprising: a stage on which an exposed substrate is placed; and a fixing portion that moves from a predetermined first position to a second position, Will be placed on the platform exposed The end portion of the substrate is sandwiched and fixed between the fixing portion and the platform; and the lithography portion exposes the first surface of the substrate to be exposed in a state where the end portion is fixed by the fixing portion, thereby a predetermined circuit pattern is lithographically formed on the first surface; the forming portion moves in conjunction with the movement of the fixing portion, and the end portion is fixed by the fixing portion, and the exposed substrate is opposed to the first surface a predetermined mark is formed on the second surface; and a reference portion as a reference for the position of the formed portion moves in conjunction with the movement of the formed portion; the exposure lithography method includes a memory step of memorizing each of the corresponding forming portions and the reference a positional relationship of the part; a position measuring step of measuring the position of the reference portion; and a deriving step of deriving the position of the forming portion based on the positional relationship of the reference portion measured in the measuring step and the positional relationship stored in the memory step.

根據該本發明的第14實施方式的曝光微影方法，與本發明的第1實施方式的曝光微影裝置同樣地發揮作用，因而與本發明的第1實施方式同樣地，可防止由被曝光基板的端部的翹曲或浮起等引起的表背(第1面及第2面)的位置對準用的標記的品質的降低。 The exposure lithography method according to the fourteenth embodiment of the present invention functions in the same manner as the exposure lithography apparatus according to the first embodiment of the present invention. Therefore, it is possible to prevent exposure by exposure as in the first embodiment of the present invention. The quality of the mark for alignment of the front and back (first surface and second surface) caused by warpage or lifting of the end portion of the substrate is lowered.

根據本發明的上述實施方式，可防止由被曝光基板的端部的翹曲或浮起等引起的表背的位置對準用的標記的品質的降低。 According to the above-described embodiment of the present invention, it is possible to prevent deterioration in the quality of the mark for alignment of the front and back caused by warping or floating of the end portion of the substrate to be exposed.

1‧‧‧曝光微影系統 1‧‧‧Exposure lithography system

2‧‧‧第1曝光微影裝置 2‧‧‧1st exposure lithography device

3‧‧‧反轉裝置 3‧‧‧Reversal device

3a‧‧‧滾輪 3a‧‧‧Roller

3b‧‧‧滾輪單元 3b‧‧‧Roller unit

3c‧‧‧支持棒 3c‧‧‧Support bar

3d‧‧‧旋轉軸 3d‧‧‧Rotary axis

4‧‧‧第2曝光微影裝置 4‧‧‧2nd exposure lithography device

5‧‧‧第1搬送部 5‧‧‧1st transport department

6‧‧‧第2搬送部 6‧‧‧Second Transport Department

7‧‧‧第3搬送部 7‧‧‧3rd Transport Department

8‧‧‧第4搬送部 8‧‧‧4th Transport Department

10‧‧‧平台 10‧‧‧ platform

11‧‧‧基體 11‧‧‧ base

12‧‧‧基台 12‧‧‧Abutment

13‧‧‧移動機構部 13‧‧‧Mobile Agency

14‧‧‧導軌 14‧‧‧ rails

15、22‧‧‧閘極 15, 22‧‧ ‧ gate

16‧‧‧曝光部 16‧‧‧Exposure Department

16a‧‧‧曝光頭 16a‧‧‧Exposure head

17‧‧‧光源單元 17‧‧‧Light source unit

18‧‧‧光纖 18‧‧‧Fiber

19‧‧‧圖像處理單元 19‧‧‧Image Processing Unit

20‧‧‧信號電纜 20‧‧‧Signal cable

23‧‧‧攝影部 23‧‧‧Photography Department

30‧‧‧基板夾緊機構部 30‧‧‧Substrate clamping mechanism

31a~31d‧‧‧夾桿 31a~31d‧‧‧Pinch

32a~32d‧‧‧移動單元 32a~32d‧‧‧Mobile unit

33‧‧‧夾持器 33‧‧‧Clamps

34‧‧‧夾刀 34‧‧‧knife

35‧‧‧支持柱 35‧‧‧Support column

37‧‧‧插通孔 37‧‧‧ inserted through hole

40‧‧‧支持板 40‧‧‧Support board

41‧‧‧空氣氣缸 41‧‧‧Air cylinder

42‧‧‧活塞桿 42‧‧‧ piston rod

44‧‧‧驅動滑輪 44‧‧‧ drive pulley

45‧‧‧從動滑輪 45‧‧‧driven pulley

46‧‧‧正時皮帶 46‧‧‧ Timing belt

47、75‧‧‧皮帶驅動馬達 47, 75‧‧‧ Belt drive motor

48‧‧‧安裝部 48‧‧‧Installation Department

49‧‧‧光感測器(基板端緣感測器) 49‧‧‧Photosensor (substrate edge sensor)

50‧‧‧傾斜面 50‧‧‧ sloped surface

51‧‧‧紫外線光源 51‧‧‧UV light source

52‧‧‧位置測量構件 52‧‧‧ position measuring components

52a‧‧‧位置識別用標記 52a‧‧‧Location identification mark

62‧‧‧AC掌 62‧‧‧AC palm

63‧‧‧吸附部 63‧‧‧Adsorption Department

64‧‧‧擠壓部 64‧‧‧Extrusion Department

70‧‧‧系統控制部 70‧‧‧System Control Department

71‧‧‧平台驅動部 71‧‧‧ Platform Drive Department

72‧‧‧基板載置位置決定部 72‧‧‧Substrate placement position determination unit

73‧‧‧操作裝置 73‧‧‧Operating device

74‧‧‧移動控制部 74‧‧‧Mobile Control Department

C‧‧‧被曝光基板 C‧‧‧ exposed substrate

C1‧‧‧被曝光基板C的第1面 C1‧‧‧1st side of exposed substrate C

C2‧‧‧被曝光基板C的第2面 C2‧‧‧The second side of the exposed substrate C

L1‧‧‧距離 L1‧‧‧ distance

M‧‧‧對準用的標記 M‧‧‧marks for alignment

P1‧‧‧表面用圖像 P1‧‧‧ Surface image

P2‧‧‧背面用圖像 P2‧‧‧Back image

S101~S105、S201~S209、S301~S311‧‧‧步驟 S101~S105, S201~S209, S301~S311‧‧‧ steps

UV‧‧‧紫外線 UV‧‧‧UV

X、Y、Z、θ‧‧‧方向 X, Y, Z, θ‧‧‧ directions

圖1是表示本發明的例示性實施形態的曝光微影系統的整體 構成的構成圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the entirety of an exposure lithography system according to an exemplary embodiment of the present invention; The composition of the composition.

圖2是表示本發明的例示性實施形態的曝光微影系統的功能的方塊圖。 Fig. 2 is a block diagram showing the function of an exposure lithography system according to an exemplary embodiment of the present invention.

圖3A是表示對本發明的例示性實施形態的曝光微影系統的被曝光基板的表面進行曝光的情況下的該表面的一例的正視圖。 3A is a front view showing an example of the surface when the surface of the substrate to be exposed of the exposure lithography system according to the exemplary embodiment of the present invention is exposed.

圖3B是表示對本發明的例示性實施形態的被曝光基板的背面進行曝光的情況下的該背面的一例的正視圖。 3B is a front view showing an example of the back surface in the case where the back surface of the substrate to be exposed according to the exemplary embodiment of the present invention is exposed.

圖4是表示本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的構成的立體圖。 4 is a perspective view showing a configuration of a first exposure lithography apparatus and a second exposure lithography apparatus according to an exemplary embodiment of the present invention.

圖5是本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的基板夾緊機構部的分解立體圖。 Fig. 5 is an exploded perspective view showing a substrate clamping mechanism portion of the first exposure lithography apparatus and the second exposure lithography apparatus according to the exemplary embodiment of the present invention.

圖6是用以說明本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的光感測器的功能的放大剖面圖。 Fig. 6 is an enlarged cross-sectional view showing the function of a photosensor of a first exposure lithography apparatus and a second exposure lithography apparatus according to an exemplary embodiment of the present invention.

圖7A是用以說明本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的位置測量構件的主要部分放大剖面圖。 Fig. 7A is an enlarged cross-sectional view showing main parts of a position measuring member of a first exposure lithography apparatus and a second exposure lithography apparatus according to an exemplary embodiment of the present invention.

圖7B是用以說明本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的位置測量構件的主要部分放大俯視圖。 Fig. 7B is an enlarged plan view showing main parts of a position measuring member of a first exposure lithography apparatus and a second exposure lithography apparatus according to an exemplary embodiment of the present invention.

圖8是表示本發明的例示性實施形態的曝光微影系統的反轉裝置的反轉機構的構成的示意側正視圖。 FIG. 8 is a schematic side elevational view showing a configuration of an inversion mechanism of the inversion device of the exposure lithography system according to the exemplary embodiment of the present invention.

圖9是表示本發明的例示性實施形態的第1曝光微影裝置及第2曝光微影裝置的電氣系統的構成圖。 FIG. 9 is a configuration diagram showing an electrical system of a first exposure lithography apparatus and a second exposure lithography apparatus according to an exemplary embodiment of the present invention.

圖10是表示本發明的例示性實施形態的曝光微影系統中平 台的移動方向與攝影部的移動方向的關係的圖。 Figure 10 is a plan view showing an exposure lithography system according to an exemplary embodiment of the present invention. A diagram showing the relationship between the moving direction of the stage and the moving direction of the photographing unit.

圖11是表示本發明的例示性實施形態的第1曝光微影裝置中載置著被曝光基板的平台的示意正視圖及詳細圖。 FIG. 11 is a schematic front view and a detailed view showing a stage on which an exposed substrate is placed in the first exposure lithography apparatus according to the exemplary embodiment of the present invention.

圖12是用以說明本發明的例示性實施形態的第1曝光微影裝置中將載置於平台的被曝光基板的端部藉由基板夾緊機構而固定的流程的示意側面圖。 FIG. 12 is a schematic side view showing a flow in which the end portion of the substrate to be exposed placed on the stage is fixed by the substrate clamping mechanism in the first exposure lithography apparatus according to the exemplary embodiment of the present invention.

圖13A是表示在現有的曝光微影裝置中載置著被曝光基板的平台的示意正視圖。 Fig. 13A is a schematic front view showing a stage on which an exposed substrate is placed in a conventional exposure lithography apparatus.

圖13B是表示以圖13A的b-b剖面切斷所得的示意剖面圖的圖。 Fig. 13B is a schematic cross-sectional view showing a cross section taken along line b-b of Fig. 13A.

圖14是表示本發明的例示性實施形態的曝光前處理程式的處理流程的流程圖。 Fig. 14 is a flowchart showing the flow of processing of the pre-exposure processing program in the exemplary embodiment of the present invention.

圖15是用於說明本發明的例示性實施形態的曝光前處理的示意正視圖。 Fig. 15 is a schematic front view for explaining pre-exposure processing in an exemplary embodiment of the present invention.

圖16是表示本發明的例示性實施形態的第1曝光處理程式的處理流程的流程圖。 Fig. 16 is a flowchart showing the flow of processing of the first exposure processing program in the exemplary embodiment of the present invention.

圖17是用於說明本發明的例示性實施形態的第1曝光處理的示意正視圖。 Fig. 17 is a schematic front view for explaining a first exposure process of an exemplary embodiment of the present invention.

圖18是表示本發明的例示性實施形態的第2曝光處理程式的處理流程的流程圖。 FIG. 18 is a flowchart showing a flow of processing of a second exposure processing program according to an exemplary embodiment of the present invention.

圖19是用於說明本發明的例示性實施形態的第2曝光處理的示意正視圖。 Fig. 19 is a schematic front view for explaining a second exposure process of an exemplary embodiment of the present invention.

以下，使用隨附圖式對本例示性實施形態的曝光微影系統進行詳細說明。另外，本例示性實施形態中，作為曝光微影系統1，以如下系統為例進行說明：將印刷配線基板及平板顯示器用玻璃基板等平板基板作為被曝光基板C，對被曝光基板C的第1面(以下，亦稱作「表面」)C1及第2面(以下，亦稱作「背面」)C2的雙方進行曝光微影。 Hereinafter, the exposure lithography system of the present exemplary embodiment will be described in detail using the drawings. In the exemplary embodiment, the exposure lithography system 1 is described as an example in which a flat substrate such as a printed wiring board or a glass substrate for a flat panel display is used as the substrate C to be exposed, and the exposed substrate C is used. Exposure lithography is performed on both one side (hereinafter, also referred to as "surface") C1 and the second surface (hereinafter also referred to as "back surface") C2.

圖1是表示本例示性實施形態的曝光微影系統1的整體構成的構成圖。而且，圖2是表示本例示性實施形態的曝光微影系統1的功能的方塊圖。如圖1及圖2所示，曝光微影系統1包括第1曝光微影裝置2、反轉裝置3、第2曝光微影裝置4、第1搬送部5、第2搬送部6、第3搬送部7、及第4搬送部8。第1曝光微影裝置2在對紫外線光源51的位置進行測量後，對被曝光基板C的表面C1進行曝光，並且在被曝光基板C的背面C2形成對準用的標記M。反轉裝置3將被曝光基板C的表背予以反轉。第2曝光微影裝置4藉由對準用的標記M來調整微影位置且對被曝光基板C的背面C2進行曝光。第1搬送部5將被曝光基板C搬送至第1曝光微影裝置2。第2搬送部6將被曝光基板C自第1曝光微影裝置2搬送至反轉裝置3。第3搬送部7將被曝光基板C自反轉裝置3搬送至第2曝光微影裝置4。第4搬送部8將被曝光基板C自第2曝光微影裝置4搬送。 Fig. 1 is a configuration diagram showing an overall configuration of an exposure lithography system 1 of the present exemplary embodiment. 2 is a block diagram showing the function of the exposure lithography system 1 of the present exemplary embodiment. As shown in FIGS. 1 and 2, the exposure lithography system 1 includes a first exposure lithography apparatus 2, a reversing apparatus 3, a second exposure lithography apparatus 4, a first transport unit 5, a second transport unit 6, and a third. The transport unit 7 and the fourth transport unit 8 are provided. After measuring the position of the ultraviolet light source 51, the first exposure lithography apparatus 2 exposes the surface C1 of the substrate C to be exposed, and forms a mark M for alignment on the back surface C2 of the substrate C to be exposed. The inverting device 3 inverts the front and back of the substrate C to be exposed. The second exposure lithography apparatus 4 adjusts the lithography position by the alignment mark M and exposes the back surface C2 of the substrate C to be exposed. The first transport unit 5 transports the substrate C to be exposed to the first exposure lithography apparatus 2 . The second transport unit 6 transports the substrate C to be exposed from the first exposure lithography apparatus 2 to the inverting device 3 . The third transport unit 7 transports the substrate C to be exposed from the inverting device 3 to the second exposure lithography device 4 . The fourth transport unit 8 transports the substrate C to be exposed from the second exposure lithography apparatus 4 .

圖3A是表示對被曝光基板C的表面C1進行曝光的情 況下的該表面C1的一例的正視圖，圖3B是表示對被曝光基板C的背面C2進行曝光的情況下的該背面C2的一例的正視圖。 FIG. 3A is a view showing exposure of the surface C1 of the substrate C to be exposed. In the front view of an example of the surface C1, FIG. 3B is a front view showing an example of the back surface C2 when the back surface C2 of the substrate C to be exposed is exposed.

如圖3A所示，在被曝光基板C的表面C1，藉由第1曝光微影裝置2微影表面用圖像(本例示性實施形態中，為「F」的形狀的圖像)P1。而且，如圖3B所示，在被曝光基板C的背面C2，藉由第2曝光微影裝置4，在與表面C1的已微影出表面用圖像P1的座標系(以下，稱作「圖像座標系」)相對應的圖像座標系中，微影背面用圖像(本例示性實施形態中，為矩形的框形狀的圖像，該矩形的框形狀的圖像包圍與上述表面C1的「F」的形狀的圖像相對應的背面C2的區域)P2。而且，在被曝光基板C的背面C2，在正面觀察為上部中央側及正面觀察為下部中央側，藉由第1曝光微影裝置2微影多個(本例示性實施形態中為2個)對準用的標記M。該對準用的標記M是如下標記，即，用以使分別微影在被曝光基板C的表面C1及背面C2的表面用圖像P1的位置與背面用圖像P2的位置彼此相對應。 As shown in FIG. 3A, on the surface C1 of the substrate C to be exposed, an image for the lithographic surface of the first exposure lithography apparatus 2 (an image of the shape of "F" in the present exemplary embodiment) P1 is used. Further, as shown in FIG. 3B, on the back surface C2 of the substrate C to be exposed, the second exposure lithography apparatus 4 is used to form a coordinate system of the image P1 on the surface C1 (hereinafter referred to as " In the image coordinate system corresponding to the image coordinate system"), the image for the lithography back surface (in the exemplary embodiment, the image is a rectangular frame shape, and the image of the rectangular frame shape is surrounded by the surface The image of the shape of the "F" of C1 corresponds to the area of the back surface C2) P2. Further, on the back surface C2 of the substrate C to be exposed, the upper center side and the front side are viewed as the lower center side as viewed from the front, and the first exposure lithography apparatus 2 has a plurality of lithography (two in the exemplary embodiment). Align the mark M. The mark M for alignment corresponds to the position of the surface image P1 and the position of the back surface image P2 on the surface C1 and the back surface C2 of the substrate C to be exposed, respectively.

本例示性實施形態的曝光微影系統1中，在被曝光基板C的搬送方向的上游側設置著第1曝光微影裝置2。第1曝光微影裝置2在將藉由第1搬送部5搬送的未曝光的被曝光基板C搬入，至裝置內時，在被曝光基板C載置於平台10的狀態下對後述紫外線光源51的位置進行測量，並對被曝光基板C的表面C1進行曝光而在表面微影表面用圖像P1，從而在被曝光基板C的背面C2形成對準用的標記M。另外，以後將對紫外線光源51的位置的測 量方法進行敍述。 In the exposure lithography system 1 of the exemplary embodiment, the first exposure lithography apparatus 2 is provided on the upstream side in the transport direction of the substrate C to be exposed. When the unexposed exposed substrate C transported by the first transport unit 5 is carried into the apparatus, the first exposure lithography apparatus 2 is placed on the stage 10 while the exposed substrate C is placed on the ultraviolet light source 51, which will be described later. The position is measured, and the surface C1 of the substrate C to be exposed is exposed to form an image P1 for the surface lithography surface, whereby the mark M for alignment is formed on the back surface C2 of the substrate C to be exposed. In addition, the position of the ultraviolet light source 51 will be measured later. The method is described.

本例示性實施形態的曝光微影系統1中，對準用的標記M以φ0.5mm至φ1mm程度的圓形而微影。對準用的標記M的大小或形狀並不限定於此，大小只要為不與表面用圖像P1及背面用圖像P2的微影重合的大小即可，形狀可任意地設定為十字型的形狀或矩形型的形狀等。 In the exposure lithography system 1 of the exemplary embodiment, the mark M for alignment is circular with a circular shape of about 0.5 mm to φ1 mm. The size or shape of the mark M for alignment is not limited to this, and the size may be a size that does not overlap with the lithography of the surface image P1 and the back surface image P2, and the shape may be arbitrarily set to a cross shape. Or a rectangular shape, etc.

在第1曝光微影裝置2的被曝光基板C的搬送方向的下游側，設置著將被曝光基板C的表背予以反轉的反轉裝置3。在搬入藉由第1曝光微影裝置2而表面C1曝光且微影有對準用的標記M的被曝光基板C時，為了在下一製程中對被曝光基板C的背面C2進行曝光，而反轉裝置3使被曝光基板C的表背反轉。 On the downstream side in the transport direction of the substrate C to be exposed of the first exposure lithography apparatus 2, an inversion device 3 that reverses the front and back of the substrate C to be exposed is provided. When the exposed substrate C having the surface M1 exposed by the first exposure lithography apparatus 2 and the lithography alignment mark M is carried in, the surface C2 of the substrate C to be exposed is exposed in the next process, and is reversed. The device 3 inverts the front and back of the substrate C to be exposed.

在反轉裝置3的被曝光基板C的搬送方向的下游側，設置著對被曝光基板C的背面C2進行曝光的第2曝光微影裝置4。在將藉由反轉裝置3反轉的被曝光基板C搬入至裝置內時，第2曝光微影裝置4對被曝光基板C的背面C2進行曝光而微影背面用圖像P2。此時，第2曝光微影裝置4在使用藉由第1曝光微影裝置2而微影於被曝光基板C的對準用的標記M進行位置對準後，對背面C2進行曝光。 On the downstream side in the transport direction of the substrate C to be exposed of the inverting device 3, a second exposure lithography apparatus 4 that exposes the back surface C2 of the substrate C to be exposed is provided. When the exposed substrate C inverted by the inverting device 3 is carried into the apparatus, the second exposure lithography apparatus 4 exposes the back surface C2 of the exposed substrate C to the lithographic back surface image P2. At this time, the second exposure lithography apparatus 4 performs alignment by using the mark M for lithography which is lithographically incident on the substrate C to be exposed by the first exposure lithography apparatus 2, and then exposes the back surface C2.

而且，本例示性實施形態的曝光微影系統1包括第1搬送裝置5、第2搬送裝置6、第3搬送裝置7、及第4搬送裝置8。第1搬送裝置5將被曝光基板C搬送至第1曝光微影裝置2為止並搬入至第1曝光微影裝置2。第2搬送裝置6將自第1曝光微影 裝置2排出的被曝光基板C搬送至反轉裝置3為止並搬入至反轉裝置3。第3搬送裝置7將自反轉裝置3排出的被曝光基板C搬送至第2曝光微影裝置4為止並搬送至第2曝光微影裝置4。第4搬送裝置8搬送自第2曝光微影裝置4排出的被曝光基板C。 Further, the exposure lithography system 1 of the present exemplary embodiment includes the first conveying device 5, the second conveying device 6, the third conveying device 7, and the fourth conveying device 8. The first transfer device 5 transports the substrate C to be exposed to the first exposure lithography device 2 and carries it into the first exposure lithography device 2 . The second transfer device 6 will be from the first exposure lithography The substrate C to be exposed discharged from the device 2 is transported to the inverting device 3 and carried into the inverting device 3. The third transport device 7 transports the substrate C to be exposed discharged from the inverting device 3 to the second exposure lithography device 4 and transports it to the second exposure lithography device 4 . The fourth transfer device 8 transports the substrate C to be exposed discharged from the second exposure lithography device 4 .

上述各搬送裝置具有多個旋轉滾輪及使旋轉滾輪旋轉的驅動馬達。旋轉滾輪多根平行地敷設著，在旋轉滾輪的一端安裝著接受藉由皮帶(belt)或金屬絲(wire)傳遞的旋轉力的鏈輪(sprocket)或滑輪。作為傳遞使旋轉滾輪旋轉的驅動馬達的旋轉力的機構，除皮帶或金屬絲以外亦可採用借助於圓筒狀的磁鐵(magnet)的傳遞方法。 Each of the transporting devices includes a plurality of rotating rollers and a drive motor that rotates the rotating rollers. A plurality of rotating rollers are laid in parallel, and a sprocket or a pulley that receives a rotational force transmitted by a belt or a wire is attached to one end of the rotating roller. As a mechanism for transmitting the rotational force of the drive motor that rotates the rotary roller, a transfer method by a cylindrical magnet may be employed in addition to the belt or the wire.

另外，本例示性實施形態中，為了提高被曝光基板C的產量(throughput)(單位時間的生產量)，而使用第1曝光微影裝置2及第2曝光微影裝置4這2台曝光微影裝置，第1曝光微影裝置2對被曝光基板C的表面C1進行曝光，第2曝光微影裝置4對被曝光基板C的背面C2進行曝光。然而，並不限定於此，亦可使被曝光基板C自表面C1向背面C2反轉而僅利用第1曝光微影裝置2來微影被曝光基板C的兩面。 Further, in the exemplary embodiment, in order to increase the throughput (production amount per unit time) of the substrate C to be exposed, two exposure micro-devices 2 and the second exposure lithography device 4 are used. In the shadow device, the first exposure lithography apparatus 2 exposes the surface C1 of the substrate C to be exposed, and the second exposure lithography apparatus 4 exposes the back surface C2 of the substrate C to be exposed. However, the present invention is not limited thereto, and the exposed substrate C may be inverted from the front surface C1 to the rear surface C2, and only the first exposure lithography apparatus 2 may be used to lithographically expose both surfaces of the substrate C to be exposed.

然後，對第1曝光微影裝置2及第2曝光微影裝置4的構成進行說明。 Next, the configuration of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 will be described.

圖4是表示本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的構成的立體圖。此處，對第1曝光微影裝置2的構成進行說明，而關於第2曝光微影裝置4的構成，省略 與第1曝光微影裝置2共通的構成的說明，而僅對與第1曝光微影裝置2的差異進行說明。而且，以下，將平台10移動的方向規定為Y方向，將相對於該Y方向在水平面內正交的方向規定為X方向，將與Y方向在鉛垂面正交的方向規定為Z方向，進而將以Z軸為中心的旋轉方向規定為θ方向。 FIG. 4 is a perspective view showing a configuration of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 according to the exemplary embodiment. Here, the configuration of the first exposure lithography apparatus 2 will be described, and the configuration of the second exposure lithography apparatus 4 will be omitted. The description of the configuration common to the first exposure lithography apparatus 2 will be described only for the difference from the first exposure lithography apparatus 2. In the following, the direction in which the stage 10 moves is defined as the Y direction, the direction orthogonal to the Y direction in the horizontal plane is defined as the X direction, and the direction orthogonal to the Y direction in the vertical plane is defined as the Z direction. Further, the direction of rotation around the Z axis is defined as the θ direction.

如圖4所示，第1曝光微影裝置2包括用以固定被曝光基板C的平板狀的平台10。在平台10的上表面的載置著被曝光基板C的區域，設置著具有多個抽吸空氣的吸附孔的吸附機構(省略圖示)。該吸附機構在被曝光基板C被固定於平台10的上表面時，藉由自吸附孔10a抽吸被曝光面C及平台10間的空氣，而使被曝光基板C真空吸附於平台10的上表面從而將被曝光基板C吸附保持於平台10。而且，平台10可移動地構成，固定於平台10的被曝光基板C伴隨平台10的移動而使被曝光基板C移動至曝光位置為止，藉由後述的曝光部16照射光束而在第1面C1微影表面用圖像P1。 As shown in FIG. 4, the first exposure lithography apparatus 2 includes a flat plate 10 for fixing the substrate C to be exposed. An adsorption mechanism (not shown) having a plurality of adsorption holes for sucking air is provided in a region on the upper surface of the stage 10 on which the substrate C to be exposed is placed. When the exposed substrate C is fixed to the upper surface of the stage 10, the adsorption mechanism vacuum-adsorbs the exposed substrate C onto the stage 10 by sucking air between the exposed surface C and the stage 10 from the adsorption hole 10a. The surface thus adsorbs and holds the exposed substrate C on the stage 10. Further, the stage 10 is movably configured, and the exposed substrate C fixed to the stage 10 moves the exposed substrate C to the exposure position with the movement of the stage 10, and the exposure unit 16 to be described later irradiates the light beam to the first surface C1. The lithography surface is image P1.

平台10支持於平板狀的基台12上，該平板狀的基台12可移動地設置在桌狀的基體11的上表面。而且，在基台12與平台10之間設置著具有包含馬達等的移動驅動機構(省略圖示)的移動機構部13。平台10藉由移動機構部13而相對於基台12，以平台10的中央部的垂線為中心軸向θ方向旋轉移動。 The platform 10 is supported on a flat base 12 which is movably disposed on the upper surface of the table-shaped base 11. Further, a moving mechanism portion 13 having a movement driving mechanism (not shown) including a motor or the like is provided between the base 12 and the stage 10. The stage 10 is rotationally moved in the axial direction θ with respect to the base 12 by the moving mechanism unit 13 with respect to the vertical line of the central portion of the stage 10.

在基體11的上表面設置著1根或多根(本例示性實施形態中為2根)導軌14。基台12藉由導軌14而可來回自如移動 地支持著，且藉由包含馬達等的平台驅動部(後述的平台驅動部71)而移動。而且，平台10藉由支持於該可移動的基台12的上表面而沿著導軌14移動。 One or a plurality of (two in the exemplary embodiment) guide rails 14 are provided on the upper surface of the base 11. The base 12 can be moved back and forth by the guide rail 14 It is supported by a platform drive unit (a platform drive unit 71 to be described later) including a motor or the like. Moreover, the platform 10 moves along the guide rail 14 by being supported on the upper surface of the movable base 12.

在基體11的上表面，以跨越導軌14的方式立設著門型的閘極(gate)15，在該閘極15上安裝著曝光部16。曝光部16包含多個(本例示性實施形態中為16個)曝光頭16a、且固定配置於平台10的移動路徑上。在曝光部16上分別連接著自光源單元17抽出的光纖18、及自圖像處理單元19抽出的信號電纜20。 On the upper surface of the base 11, a gate type gate 15 is erected so as to straddle the guide rail 14, and the exposure portion 16 is attached to the gate 15. The exposure unit 16 includes a plurality of (16 in the present exemplary embodiment) exposure heads 16a and is fixedly disposed on the movement path of the stage 10. An optical fiber 18 drawn from the light source unit 17 and a signal cable 20 drawn from the image processing unit 19 are connected to the exposure unit 16, respectively.

各曝光頭16a具有作為反射型的空間光調變元件的數位微鏡裝置(digital micromirror device，DMD)。各曝光頭16a根據自圖像處理單元19輸入的圖像資料來控制DMD，對來自光源單元17的光束進行調變，並將該光束照射至載置於平台10的被曝光基板C。藉此，藉由第1曝光微影裝置2進行曝光。另外，亦可使用液晶等透過型空間光調變元件來作為空間光調變元件。 Each of the exposure heads 16a has a digital micromirror device (DMD) as a reflective spatial light modulation element. Each of the exposure heads 16a controls the DMD based on the image data input from the image processing unit 19, modulates the light beam from the light source unit 17, and irradiates the light beam to the exposed substrate C placed on the stage 10. Thereby, exposure is performed by the first exposure lithography apparatus 2. Further, a transmissive spatial light modulation element such as a liquid crystal may be used as the spatial light modulation element.

在基體11的上表面，進而以跨越導軌14的方式設置著閘極22。在閘極22上安裝著用以對載置於平台10的被曝光基板C進行攝影的1個或多個(本例示性實施形態中為2個)攝影部23。攝影部23為內置1次發光時間極短的頻閃儀(strobo)的電荷耦合器件(Charge Coupled Device，CCD)照相機等。各個攝影部23在水平面內相對於平台10的移動方向(Y方向)垂直的方向(X方向)上可移動地設置著，且為了對後述的位置測量構件52、及微影於被曝光基板C的對準用的標記M進行攝影而設置。 而且，攝影部23的相對於平台10的相對位置根據平台10或者攝影部23的移動來測量，且記憶於系統控制部70所具有的記憶機構中。另外，在對位置測量構件52中的紫外線光源51進行攝影的情況下，在未載置被曝光基板C的狀態下進行攝影。 On the upper surface of the base 11, the gate 22 is further provided so as to straddle the guide rail 14. One or a plurality of (two in the exemplary embodiment) imaging unit 23 for photographing the exposed substrate C placed on the stage 10 are attached to the gate 22 . The photographing unit 23 is a charge coupled device (CCD) camera or the like that incorporates a strobo having a very short lighting time. Each of the imaging units 23 is movably provided in a horizontal direction (X direction) perpendicular to the moving direction (Y direction) of the stage 10 in the horizontal plane, and is used for the position measuring member 52 and the lithography to be exposed on the substrate C to be described later. The alignment mark M is set for photography. Further, the relative position of the photographing unit 23 with respect to the stage 10 is measured based on the movement of the stage 10 or the photographing unit 23, and is stored in the memory mechanism of the system control unit 70. In addition, when the ultraviolet light source 51 in the position measuring member 52 is photographed, photographing is performed in a state where the exposed substrate C is not placed.

第1曝光微影裝置2根據藉由攝影部23而對位置測量構件52進行攝影所得的圖像，導出紫外線光源51的被曝光基板C的位置。另外，第2曝光微影裝置4根據藉由攝影部23而對對準用的標記M進行攝影所得的圖像，與第1曝光微影裝置2的紫外線光源51的位置進行比較而檢測其位置偏移量(X方向、Y方向、θ方向的偏移量)。該對準用的標記M的位置偏移量的資訊被用於微影於被曝光基板C的表面C1的表面用圖像P1與微影於背面C2的背面用圖像P2的位置的修正。 The first exposure lithography apparatus 2 derives the position of the exposed substrate C of the ultraviolet light source 51 based on the image obtained by imaging the position measuring member 52 by the imaging unit 23. In addition, the second exposure lithography apparatus 4 detects an image of the alignment mark M by the imaging unit 23, and compares the position of the ultraviolet light source 51 of the first exposure lithography apparatus 2 to detect the positional deviation. Shift amount (offset in the X direction, Y direction, and θ direction). The information on the positional shift amount of the mark M for alignment is used for the correction of the position of the surface image P1 on the surface C1 of the substrate C to be exposed and the image P2 on the back surface of the back surface C2.

另外，理想的是以與位置測量構件52的個數(或者對準用的標記M的個數)相應的個數來設置攝影部23。然而，並不限定於此，亦可設置1個攝影部23，並且藉由使該攝影部23移動而對多個位置測量構件52或多個對準用的標記M進行攝影。 Further, it is preferable to provide the photographing unit 23 in a number corresponding to the number of the position measuring members 52 (or the number of the marks M for alignment). However, the present invention is not limited thereto, and one imaging unit 23 may be provided, and the plurality of position measuring members 52 or the plurality of alignment marks M may be imaged by moving the imaging unit 23.

而且，在平台10的上表面，設置著用以將被曝光基板C牢固地固定於平台的基板夾緊機構部30。 Further, on the upper surface of the stage 10, a substrate clamping mechanism portion 30 for firmly fixing the substrate C to be exposed to the stage is provided.

圖5是本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的基板夾緊機構部30的分解立體圖。如圖5所示，基板夾緊機構部30包括一對夾桿(clamp bar)31a、夾桿31b，自上方夾緊被曝光基板C的一方向的兩端部；一對夾桿31c、夾桿 31d，自上方夾緊在被曝光基板C的水平面相對於上述一方向垂直的方向的兩端部；以及移動單元32a~移動單元32d，使該些夾桿31a~夾桿31d分別沿水平方向平行移動。夾桿31a~夾桿31d分別配置於平台10的上表面，移動單元32a~移動單元32d配置於平台10的下方。 FIG. 5 is an exploded perspective view of the substrate clamping mechanism unit 30 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the exemplary embodiment. As shown in FIG. 5, the substrate clamping mechanism portion 30 includes a pair of clamping bars 31a and clamping bars 31b for clamping both ends of one direction of the exposed substrate C from above; a pair of clamping bars 31c and clips Rod 31d, clamping both ends of the horizontal plane of the substrate C to be exposed from the above direction in a direction perpendicular to the one direction; and the moving unit 32a to the moving unit 32d, respectively, the clips 31a to 31d are parallel in the horizontal direction mobile. The clamp levers 31a to 31d are respectively disposed on the upper surface of the stage 10, and the moving units 32a to 32d are disposed below the platform 10.

夾桿31a、夾桿31b在Y方向上為長條狀且在X方向上相對向，夾桿31c、夾桿31d在X方向上為長條狀且在Y方向上相對向。夾桿31a、夾桿31b以如下方式構成：長度形成得比夾桿31c、夾桿31d短，即便在被曝光基板C的尺寸比較小的情況下，亦不會相互干涉。 The clamp lever 31a and the clamp lever 31b are elongated in the Y direction and face each other in the X direction, and the clamp lever 31c and the clamp lever 31d are elongated in the X direction and face each other in the Y direction. The clamp lever 31a and the clamp lever 31b are configured to have a length shorter than the clamp lever 31c and the clamp lever 31d, and do not interfere with each other even when the size of the exposed substrate C is relatively small.

夾桿31a包括金屬製(例如鋁)的夾持器33(clamp holder)；樹脂製的夾刀34，固定於夾持器33的下表面的內側區域(平台10的中心側區域)，且與被曝光基板C的表面C1接觸；以及2根支持柱35，設置於夾持器33的下表面的外側區域(平台10的外側區域)。在平台10上，以貫通表背方向且自端部朝向中央的方式，在各邊按照規定間隔而形成1個或多個(本例示性實施形態中在各邊形成2個(共計8個))沿Y方向或者X方向延伸的插通孔37，夾桿31a的2根支持柱35插通至各邊的2個插通孔37中。夾桿31b~夾桿31d亦為與夾桿31a相同的構成。 The clamp lever 31a includes a clamper 33 made of metal (for example, aluminum); a clamp 34 made of resin is fixed to an inner region of the lower surface of the gripper 33 (the center side region of the platform 10), and The surface C1 of the substrate C to be exposed is in contact with each other; and two support columns 35 are provided on the outer region of the lower surface of the holder 33 (the outer region of the stage 10). In the platform 10, one or a plurality of sides are formed at predetermined intervals so as to penetrate the front and back directions from the end portion (in this exemplary embodiment, two (eight in total) are formed on each side. The insertion hole 37 extending in the Y direction or the X direction, the two support posts 35 of the clamp lever 31a are inserted into the two insertion holes 37 on each side. The clamp lever 31b to the clamp lever 31d also have the same configuration as the clamp lever 31a.

移動單元32a包括對2根支持柱35進行支持的支持板40、及使該支持板40沿Z方向滑動移動的空氣氣缸41。空氣氣缸41的活塞桿42的前端固定於支持板40的下表面。空氣氣缸41 藉由包含馬達等的驅動部而使活塞桿42下降及上升。活塞桿42的可動範圍受到限制，下降時上升時均在規定位置處停止。 The moving unit 32a includes a support plate 40 that supports the two support columns 35, and an air cylinder 41 that slides the support plate 40 in the Z direction. The front end of the piston rod 42 of the air cylinder 41 is fixed to the lower surface of the support plate 40. Air cylinder 41 The piston rod 42 is lowered and raised by a drive unit including a motor or the like. The movable range of the piston rod 42 is limited, and stops at a predetermined position when rising when descending.

當活塞桿42下降時，夾桿31a與活塞桿42一併下降，夾桿31a被擠壓至平台10。此處，在平台10上載置著被曝光基板C的情況下，被曝光基板C藉由夾桿31a而夾緊。另一方面，當活塞桿42上升時，夾桿31a與活塞桿42一併上升，夾桿31a在Z方向上與平台10相隔。夾桿31a與平台10相隔的距離比被曝光基板C的厚度大。 When the piston rod 42 is lowered, the clamp rod 31a is lowered together with the piston rod 42, and the clamp rod 31a is pressed to the stage 10. Here, when the substrate C to be exposed is placed on the stage 10, the substrate C to be exposed is clamped by the chuck 31a. On the other hand, when the piston rod 42 is raised, the clamp lever 31a rises together with the piston rod 42, and the clamp lever 31a is spaced apart from the stage 10 in the Z direction. The distance between the clamping bar 31a and the stage 10 is larger than the thickness of the substrate C to be exposed.

移動單元32a還包括：在X方向上排列的驅動滑輪44及從動滑輪45，架設於該些滑輪44、滑輪45的正時皮帶46(timing belt)，以及使驅動滑輪44旋轉的皮帶驅動馬達47。皮帶驅動馬達47可進行正轉及逆轉。在正時皮帶46上經由安裝部48而安裝著空氣氣缸41，當正時皮帶46驅動時，空氣氣缸41及支持板40在X方向上移動，藉此，夾桿31a在X方向上移動。夾桿31a一邊使支持柱35沿著插通孔37滑動移動，一邊在支持柱35位於插通孔37的外側的端部的退避位置、與支持柱35位於插通孔37的內側的端部的中央位置之間移動。另外，將夾桿31a夾緊被曝光基板C的周緣部時的夾桿31a的位置(退避位置與中央位置之間的任一位置)稱作夾緊位置。 The moving unit 32a further includes a driving pulley 44 and a driven pulley 45 arranged in the X direction, a timing belt 46 that is mounted on the pulleys 44 and 45, and a belt driving motor 47 that rotates the driving pulley 44. . The belt drive motor 47 can perform forward rotation and reverse rotation. The air cylinder 41 is attached to the timing belt 46 via the mounting portion 48. When the timing belt 46 is driven, the air cylinder 41 and the support plate 40 are moved in the X direction, whereby the clamp lever 31a moves in the X direction. The clamp lever 31a slides along the insertion hole 37 while the support post 35 is at the retracted position of the end of the support post 35 located outside the insertion hole 37, and the end of the support post 35 located inside the insertion hole 37. Move between the central positions. In addition, the position of the clamp lever 31a (any position between the retracted position and the center position) when the clamp lever 31a is clamped to the peripheral edge portion of the substrate C to be exposed is referred to as a clamp position.

移動單元32b、移動單元32c、移動單元32d為與移動單元32a相同的構成。其中，移動單元32b使夾桿31b在Z方向及X方向上移動，移動單元32c使夾桿31c在Z方向及Y方向上 移動，移動單元32d使夾桿31d在Z方向及Y方向上移動。 The moving unit 32b, the moving unit 32c, and the moving unit 32d have the same configuration as the moving unit 32a. Wherein, the moving unit 32b moves the clamping lever 31b in the Z direction and the X direction, and the moving unit 32c causes the clamping lever 31c to be in the Z direction and the Y direction. Moving, the moving unit 32d moves the clamp lever 31d in the Z direction and the Y direction.

圖6是用以說明本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的光感測器49的功能的放大剖面圖。如圖5及圖6所示，在移動單元32a的支持板40上設置著用以檢測被曝光基板C的有無的反射型光感測器(基板端緣感測器)49。光感測器49安裝於支持板40上，且設置於與插通孔37相對應的位置，亦即自上方觀察時光感測器49自插通孔37露出的位置。光感測器49包括朝向上方發出檢查光的投光部、及接收反射至被曝光基板C的背面C2的檢查光的受光部，在受光部接收到檢查光的情況下輸出有基板信號，在受光部未接收到檢查光的情況下輸出無基板信號。 FIG. 6 is an enlarged cross-sectional view for explaining functions of the photodetector 49 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the exemplary embodiment. As shown in FIGS. 5 and 6, a reflection type photo sensor (substrate edge sensor) 49 for detecting the presence or absence of the substrate C to be exposed is provided on the support plate 40 of the moving unit 32a. The photo sensor 49 is mounted on the support plate 40 and is disposed at a position corresponding to the insertion hole 37, that is, a position where the photo sensor 49 is exposed from the insertion hole 37 when viewed from above. The photo sensor 49 includes a light projecting portion that emits inspection light toward the upper side and a light receiving portion that receives the inspection light that is reflected on the back surface C2 of the substrate C to be exposed. When the light receiving unit receives the inspection light, the substrate signal is output. When the light receiving unit does not receive the inspection light, the substrateless signal is output.

夾桿31a的夾刀34位於光感測器49的上方。為了防止來自光感測器49的檢查光反射至夾刀34而朝向光感測器49折回，在夾刀34的與插通孔37相對應的部位形成著傾斜面50。在各移動單元32b、移動單元32c、移動單元32d的支持板40上，亦設置著與移動單元32a相同的光感測器49。 The nip 34 of the clamping lever 31a is located above the photo sensor 49. In order to prevent the inspection light from the photo sensor 49 from being reflected to the chuck 34 and being folded back toward the photo sensor 49, an inclined surface 50 is formed at a portion of the chuck 34 corresponding to the insertion hole 37. On the support plate 40 of each of the moving unit 32b, the moving unit 32c, and the moving unit 32d, the same photo sensor 49 as the moving unit 32a is also provided.

而且，在各個支持板40上設置著位置測量構件52，該位置測量構件52對載置於平台10的被曝光基板C形成對準用的標記M。圖7A是用以說明本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的位置測量構件52的主要部分放大剖面圖。圖7B是用以說明本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的位置測量構件52的主要部分放大俯視圖。 另外，圖7B中為了說明紫外線光源51的構成而省略被曝光基板C。 Further, a position measuring member 52 is provided on each of the support plates 40, and the position measuring member 52 forms a mark M for alignment on the substrate C to be exposed placed on the stage 10. Fig. 7A is an enlarged cross-sectional view showing main parts of the position measuring member 52 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the exemplary embodiment. FIG. 7B is an enlarged plan view showing main parts of the position measuring member 52 of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 of the exemplary embodiment. In addition, in FIG. 7B, in order to explain the structure of the ultraviolet light source 51, the to-be-exposed board|substrate C is ab

如圖5、圖7A及圖7B所示，各個位置測量構件52以與在各邊設置著多個的插通孔37中的設置於中央的插通孔37相對應的方式，形成為在沿著插通孔37的方向伸展的板狀。在位置測量構件52，在平台10的中央一側，設置著朝向平台10的方向產生紫外線光束(短波長的光束)紫外線(ultraviolet，UV)的紫外線光源51。將藉由該紫外線光源51產生的紫外線光束UV一邊通過插通孔37一邊照射至被曝光基板C，藉此在被曝光基板C的第2面(與平台10相接的一側的面)C2微影對準用的標記M。 As shown in FIG. 5, FIG. 7A and FIG. 7B, each of the position measuring members 52 is formed to be along the same manner as the insertion hole 37 provided in the center of the plurality of insertion holes 37 provided on each side. A plate shape in which the insertion hole 37 extends in the direction. In the position measuring member 52, on the center side of the stage 10, an ultraviolet light source 51 that generates an ultraviolet light beam (short-wavelength light beam) ultraviolet rays (UV) toward the stage 10 is provided. The ultraviolet light beam UV generated by the ultraviolet light source 51 is irradiated onto the substrate C to be exposed through the insertion hole 37, whereby the second surface (the surface on the side in contact with the stage 10) C2 of the substrate C to be exposed Marker M for lithography alignment.

而且，在位置測量構件52，在平台10的端部一側，多個(本例示性實施形態中為2個)位置識別用標記52a設置於可自平台10的上方目測確認的同一面上。而且，該些位置識別用標記52a在將被曝光基板C載置於平台10上，且固定於基板夾緊機構30的狀態下，形成於不會由被曝光基板C遮住而可通過插通孔37自外部目測確認的位置。藉此，各個位置識別用標記52a可在由攝影部23所獲得的攝影圖像中加以識別。 Further, in the position measuring member 52, a plurality of (two in the exemplary embodiment) position recognition marks 52a are provided on the same surface that can be visually confirmed from above the stage 10 on the end side of the stage 10. Further, the position identification marks 52a are placed on the stage 10 and fixed to the substrate clamping mechanism 30, and are formed so as not to be blocked by the exposed substrate C, and can be inserted. The hole 37 is visually confirmed from the outside. Thereby, each position recognition mark 52a can be recognized in the photographic image obtained by the photographing unit 23.

各個位置測量構件52分別與移動單元32a~移動單元32d的移動聯動地移動。與各個位置測量構件52相對應的插通孔37設置於包含各個位置測量構件52的移動路徑的區域。紫外線光源51在藉由曝光部16對被曝光基板C的表面C1進行曝光的期間，亦能夠以貫通未插通支持柱35的插通孔37的方式產生紫外 線光束UV。另外，紫外線光束UV的照射時間可根據塗佈於被曝光基板C的感光材料而分別設定最佳時間。 Each of the position measuring members 52 moves in conjunction with the movement of the moving unit 32a to the moving unit 32d. The insertion holes 37 corresponding to the respective position measuring members 52 are provided in the regions including the movement paths of the respective position measuring members 52. When the exposure light is applied to the surface C1 of the substrate C to be exposed by the exposure unit 16, the ultraviolet light source 51 can also generate ultraviolet light so as to penetrate through the insertion hole 37 of the support post 35. Line beam UV. Further, the irradiation time of the ultraviolet light beam UV can be set optimally according to the photosensitive material applied to the substrate C to be exposed.

而且，在各個位置測量構件52中，以紫外線光源51與位置識別用標記52a相互成為已知的位置關係的方式來進行設置，並且對各個位置關係預先進行測量並記憶於系統控制部70所具有的記憶機構中。藉此，即便在紫外線光源51位於被曝光基板C的背部的情況下等，無法藉由攝影部23對紫外線光源51進行攝影的情況下，亦可藉由對各個位置識別用標記52a進行攝影而測量位置，並根據經測量的各個位置識別用標記52a的位置、與所記憶的紫外線光源51及位置識別用標記52a的位置關係，來導出紫外線光源51的位置。 Further, each of the position measuring members 52 is provided such that the ultraviolet light source 51 and the position recognition mark 52a have a known positional relationship with each other, and each positional relationship is measured in advance and stored in the system control unit 70. Memory mechanism. With this configuration, even when the ultraviolet light source 51 is positioned on the back side of the substrate C to be exposed, the ultraviolet light source 51 cannot be imaged by the imaging unit 23, and the position recognition mark 52a can be imaged. The position of the ultraviolet light source 51 is derived based on the positional relationship between the measured position identification mark 52a and the stored ultraviolet light source 51 and the position recognition mark 52a.

另外，第1曝光微影裝置2包括多個紫外線光源51，而第2曝光微影裝置4亦可不必包括多個紫外線光源51。亦可在第1曝光微影裝置2設置著多個紫外線光源，並且藉由使該紫外線光源移動而微影多個對準用的標記M。 Further, the first exposure lithography apparatus 2 includes a plurality of ultraviolet light sources 51, and the second exposure lithography apparatus 4 does not necessarily need to include a plurality of ultraviolet light sources 51. A plurality of ultraviolet light sources may be provided in the first exposure lithography apparatus 2, and a plurality of alignment marks M may be micro-imaged by moving the ultraviolet light source.

第1曝光微影裝置2包括自動載置掌(auto carriers hand)(以下，AC掌)62，該自動載置掌將藉由第1搬送裝置5搬送而來的被曝光基板C搬入至第1曝光微影裝置2的內部。AC掌62形成為平板狀，並且與水平面平行地在水平方向及鉛垂方向上可移動地設置著。而且，在AC掌62的下表面設置著：具有吸附部63的吸附機構，該吸附部63藉由抽吸空氣而將被曝光基板C利用真空吸附進行吸附保持；以及具有擠壓部64的擠壓機構，該擠 壓部64將被曝光基板C朝向下方擠壓且上下移動自如。 The first exposure lithography apparatus 2 includes an auto carrier hand (hereinafter, AC palm) 62 that carries the exposed substrate C transported by the first transport device 5 to the first The inside of the lithography apparatus 2 is exposed. The AC palm 62 is formed in a flat shape and is movably disposed in the horizontal direction and the vertical direction in parallel with the horizontal plane. Further, on the lower surface of the AC palm 62, there is provided an adsorption mechanism having an adsorption portion 63 that adsorbs and holds the exposed substrate C by vacuum suction by sucking air; and has a squeeze portion 64. Pressing mechanism The pressing portion 64 presses the exposed substrate C downward and moves up and down.

AC掌62藉由將載置於第1搬送裝置5的未曝光的被曝光基板C利用吸附機構來吸附保持而在上方吊起，將吊起的被曝光基板C載置於平台10的上表面的預定的位置。當載置被曝光基板C時，一邊藉由擠壓機構將被曝光基板C擠壓至平台10一邊解除吸附部63的吸附，藉此平台10的真空吸附發揮作用，從而被曝光基板C牢固地固定於平台10。 The AC palm 62 is sucked and held by the adsorption mechanism by the unexposed substrate C placed on the first transfer device 5, and is lifted upward, and the lifted exposed substrate C is placed on the upper surface of the stage 10. The intended location. When the substrate C to be exposed is placed, the adsorption of the adsorption portion 63 is released by pressing the substrate C to be exposed to the stage 10 by the pressing mechanism, whereby the vacuum suction of the stage 10 acts, and the exposed substrate C is firmly fixed. Fixed to platform 10.

而且，AC掌62藉由將載置於平台10的上表面的已完成曝光的被曝光基板C利用吸附機構來吸附保持而在上方吊起，在吸附保持著吊起的被曝光基板C的狀態下移動至第2搬送裝置6為止，然後解除吸附機構的吸附，藉此使被曝光基板C移動至第2搬送裝置6。 Further, the AC palm 62 is slid upward by the suction and holding of the exposed substrate C on the upper surface of the stage 10 by the suction mechanism, and the state of the exposed substrate C that is lifted and held is adsorbed and held. After moving down to the second conveying device 6, the suction of the suction mechanism is released, and the substrate C to be exposed is moved to the second conveying device 6.

根據本例示性實施形態的曝光微影系統1的基板夾緊機構部30，為如下的構成：可確實地夾緊被曝光基板C的周緣部，從而可矯正被曝光基板C的翹曲及應變，並且，使紫外線光源51、位置識別構件52及光感測器49與夾桿31a~夾桿31d一併移動，而無須用於紫外線光源51及光感測器49的移動機構，因而可抑制基板夾緊機構部30的製造成本。 According to the substrate clamping mechanism unit 30 of the exposure lithography system 1 of the present exemplary embodiment, the peripheral portion of the exposed substrate C can be surely clamped, and the warpage and strain of the exposed substrate C can be corrected. Further, the ultraviolet light source 51, the position recognizing member 52, and the photo sensor 49 are moved together with the clamp lever 31a to the clamp lever 31d, and the movement mechanism of the ultraviolet light source 51 and the photo sensor 49 is not required, thereby suppressing The manufacturing cost of the substrate clamping mechanism portion 30.

圖8是表示本例示性實施形態的曝光微影系統1的反轉裝置3的反轉機構的構成的示意側正視圖。如圖7所示，反轉裝置3包括具有夾入被曝光基板C的多個滾輪3a的滾輪單元3b。滾輪單元3b藉由支持棒3c而支持，當夾入被曝光基板C時，在 藉由支持棒3c而提昇的狀態下以設置於滾輪單元3b的中央部的旋轉軸3d為中心進行旋轉。在滾輪單元3b旋轉180度後，將被曝光基板C自滾輪單元3b釋放，藉此被曝光基板C的表背反轉。另外，反轉機構的構成並不限於上述構成，亦可使用將被曝光基板C的一端提昇而使被曝光基板C旋轉180度，從而使被曝光基板C的表背反轉的方法，或其他的先前已知的方法。 FIG. 8 is a schematic side elevational view showing a configuration of an inversion mechanism of the inverting device 3 of the exposure lithography system 1 of the exemplary embodiment. As shown in FIG. 7, the inverting device 3 includes a roller unit 3b having a plurality of rollers 3a sandwiching the substrate C to be exposed. The roller unit 3b is supported by the support rod 3c, and when the substrate C to be exposed is sandwiched, In a state of being lifted by the support rod 3c, the rotation is performed centering on the rotation shaft 3d provided at the center portion of the roller unit 3b. After the roller unit 3b is rotated by 180 degrees, the exposed substrate C is released from the roller unit 3b, whereby the front and back of the exposed substrate C are reversed. Further, the configuration of the reversing mechanism is not limited to the above configuration, and a method of reversing the front and back of the substrate C to be exposed by raising one end of the substrate C to be exposed and rotating the substrate C to be exposed by 180 degrees may be used. Previously known methods.

圖9是表示本例示性實施形態的第1曝光微影裝置2及第2曝光微影裝置4的電氣系統的構成圖。 FIG. 9 is a view showing the configuration of an electric system of the first exposure lithography apparatus 2 and the second exposure lithography apparatus 4 according to the exemplary embodiment.

如圖9所示，在第1曝光微影裝置2中，設置著分別與裝置各部電性連接的系統控制部70，該系統控制部70對各部總括地控制。系統控制部70對AC掌62進行控制而進行被曝光基板C的朝平台10的搬入動作及排出動作。而且，系統控制部70一邊控制平台驅動部71一邊進行平台10的移動，藉由攝影部23進行對準用的標記M的攝影，而根據對準標記M的位置來調整圖像的微影位置，並且，對光源單元17及圖像處理單元19進行控制而由曝光頭16a進行曝光處理。操作裝置73具有顯示部與輸入部，例如在輸入被曝光基板C的外形尺寸時進行操作。 As shown in FIG. 9, in the first exposure lithography apparatus 2, a system control unit 70 that is electrically connected to each unit of the apparatus is provided, and the system control unit 70 collectively controls each unit. The system control unit 70 controls the AC palm 62 to perform a loading operation and a discharging operation of the exposed substrate C toward the stage 10. Further, the system control unit 70 controls the movement of the stage 10 while controlling the stage driving unit 71, and the imaging unit 23 performs imaging of the alignment mark M, and adjusts the lithographic position of the image in accordance with the position of the alignment mark M. Further, the light source unit 17 and the image processing unit 19 are controlled to perform exposure processing by the exposure head 16a. The operation device 73 has a display portion and an input portion, and operates, for example, when an external size of the substrate C to be exposed is input.

基板載置位置決定部72決定被曝光基板C的相對於平台10的載置位置(將該載置位置稱作適當載置位置)。另外，可藉由在Y方向上對攝影部23的攝像時機進行調整而使對準用的標記M位於攝影區域的中央，因此，Y方向上的適當載置位置可設定於平台10上的任一位置，在本例示性實施形態中，Y方向上的 適當載置位置設定於被曝光基板C的中心與平台10的中心一致的位置。 The substrate placement position determining unit 72 determines the placement position of the substrate C to be exposed with respect to the stage 10 (this placement position is referred to as an appropriate placement position). Further, since the imaging timing of the imaging unit 23 is adjusted in the Y direction and the alignment mark M is positioned at the center of the imaging region, the appropriate placement position in the Y direction can be set to any of the platforms 10. Position, in the present exemplary embodiment, in the Y direction The appropriate placement position is set at a position where the center of the substrate C to be exposed coincides with the center of the stage 10.

基板載置位置決定部72中，根據藉由在對被曝光基板C進行曝光動作之前所進行的準備動作而獲得的資訊，來算出X方向上的基板的適當載置位置(對準用的標記M的適當位置)。該準備動作中，在X方向上將被曝光基板C載置於平台10的適當位置(以在Y方向上，使被曝光基板C的中心與平台10的中心一致，且平台10的一方的相對向的邊與被曝光基板C的一方的相對向的邊分別平行的方式載置)，之後藉由攝影部23對對準用的標記M進行攝影，從而算出X方向上的攝影區域的中心位置與對準用的標記M的位置的偏移量，並根據該偏移量算出X方向上的基板的適當載置位置。在準備動作中，藉由對多塊(例如5塊)基板進行該處理，而能夠更正確地求出適當的載置位置。另外，在該準備動作中，亦決定攝影部23的攝影時機。所算出的基板的適當載置位置資訊、及攝影時機資訊被送至系統控制部70且記憶於系統控制部70所具有的記憶機構中。 The substrate placement position determining unit 72 calculates an appropriate placement position of the substrate in the X direction based on the information obtained by the preparation operation performed before the exposure operation on the substrate C to be exposed (the alignment mark M). Appropriate position). In the preparatory operation, the substrate C to be exposed is placed in an appropriate position on the stage 10 in the X direction (in the Y direction, the center of the substrate C to be exposed coincides with the center of the stage 10, and the opposite side of the stage 10 The side of the direction is placed parallel to the opposite side of the substrate C to be exposed), and then the image M is photographed by the image capturing unit 23 to calculate the center position of the image capturing area in the X direction. The amount of shift of the position of the mark M for alignment is calculated, and an appropriate placement position of the substrate in the X direction is calculated based on the amount of shift. In the preparation operation, by performing this processing on a plurality of (for example, five) substrates, it is possible to more accurately obtain an appropriate placement position. Further, in this preparation operation, the imaging timing of the imaging unit 23 is also determined. The calculated appropriate placement position information of the substrate and the imaging timing information are sent to the system control unit 70 and stored in the memory mechanism of the system control unit 70.

移動控制部74根據系統控制部70的指示，在平台10移動時測量紫外線光源51的位置的情況下，以多個位置測量構件52的各自的位置識別用標記52a通過多個攝影部23的各自的攝影區域的方式，對攝影部23的移動驅動進行控制。而且，移動控制部74在根據系統控制部70的指示，對被曝光基板C進行曝光微影的情況下，以形成於被曝光基板C的多個對準用的標記M通過 多個攝影部23的各自的攝影區域的方式，對攝影部23的移動驅動進行控制。 When the position of the ultraviolet light source 51 is measured when the stage 10 moves, the movement control unit 74 passes the respective position recognition marks 52a of the plurality of position measuring members 52 through the respective plurality of imaging units 23, in accordance with an instruction from the system control unit 70. The manner of the photographing area controls the movement drive of the photographing unit 23. Further, when the exposure control substrate 70 performs exposure lithography on the basis of the instruction of the system control unit 70, the movement control unit 74 passes the plurality of alignment marks M formed on the substrate C to be exposed. The movement of the imaging unit 23 is controlled in a manner of the respective imaging regions of the plurality of imaging units 23.

移動控制部74根據系統控制部70的指示，而分別對移動單元32a~移動單元32d的驅動進行控制。移動控制部74監視來自移動單元32a~移動單元32d的光感測器49的信號(有基板信號或者無基板信號)，並根據該信號對移動單元32a~移動單元32d的空氣氣缸41及皮帶驅動馬達75的驅動進行控制，而使夾桿31a~夾桿31d進行夾緊動作。 The movement control unit 74 controls the driving of the moving unit 32a to the moving unit 32d in accordance with an instruction from the system control unit 70. The movement control unit 74 monitors signals (with or without a substrate signal) from the light sensor 49 of the moving unit 32a to the moving unit 32d, and drives the air cylinder 41 and the belt of the moving unit 32a to the moving unit 32d based on the signal. The driving of the motor 75 is controlled, and the clamping lever 31a to the clamping lever 31d are clamped.

移動控制部74中，根據自操作裝置73輸入的基板尺寸資訊、及藉由準備動作而算出的基板的適當載置位置資訊，來推測平台10上的區域中載置有被曝光基板C的區域，並根據該推測的區域將夾桿31a~夾桿31d的移動速度在高速/低速之間進行切換。具體來說，在平台10上，在比與被曝光基板C的周緣相隔了距離L1(例如40mm)的位置(參照圖6)靠外側處設定為高速移動，在比該位置靠內側處設定為低速移動。藉此，因在低速移動時進行被曝光基板C的檢測，故可確實地檢測被曝光基板C。另外，將與被曝光基板C的周緣相隔了距離L1的位置稱作減速位置(切換點)。夾桿31a~夾桿31d於自檢測到被曝光基板C的位置而向內側深入了規定距離(例如5mm)的夾緊位置處停止，且在該夾緊位置處進行夾緊。該夾緊位置成為夾桿31a~夾桿31d的支持柱35不抵接於被曝光基板C的端緣的位置。 The movement control unit 74 estimates the area on which the substrate C to be exposed is placed in the region on the stage 10 based on the substrate size information input from the operation device 73 and the appropriate placement position information of the substrate calculated by the preparatory operation. And, according to the estimated area, the moving speed of the clamp lever 31a to the clamp lever 31d is switched between high speed and low speed. Specifically, the stage 10 is set to be moved at a high speed outside the position (see FIG. 6 ) at a distance L1 (for example, 40 mm) from the periphery of the substrate C to be exposed, and is set to be located inside the position. Move at low speed. Thereby, since the detection of the substrate C to be exposed is performed at the time of low speed movement, the substrate C to be exposed can be reliably detected. Further, a position separated from the periphery of the substrate C to be exposed by a distance L1 is referred to as a deceleration position (switching point). The clamp lever 31a to the clamp lever 31d are stopped at a clamp position that has penetrated a predetermined distance (for example, 5 mm) inward from the position where the exposed substrate C is detected, and is clamped at the clamped position. This clamp position is a position at which the support post 35 of the clamp lever 31a to the clamp lever 31d does not abut against the edge of the substrate C to be exposed.

移動控制部74在夾桿31a~夾桿31d高速移動時檢測到 被曝光基板C的情況下，判斷為實際的基板尺寸比所輸入的基板尺寸大，使夾桿31a~夾桿31d的移動立即停止並且對系統控制部70輸出異常信號。系統控制部70接收異常信號，使操作裝置73的顯示部顯示內容為基板尺寸大的錯誤資訊。另外，亦可代替顯示錯誤資訊而發出警告音。 The movement control unit 74 detects when the clamp lever 31a to the clamp lever 31d move at a high speed. In the case of the substrate C to be exposed, it is determined that the actual substrate size is larger than the input substrate size, and the movement of the clamp lever 31a to the clamp lever 31d is immediately stopped and an abnormality signal is output to the system control unit 70. The system control unit 70 receives the abnormality signal, and causes the display unit of the operation device 73 to display the error information having a large substrate size. In addition, a warning tone can be issued instead of displaying an error message.

而且，移動控制部74在夾桿31a~夾桿31d低速移動而未檢測到被曝光基板C且低速移動持續規定時間的情況下，判斷為實際的基板尺寸比所輸入的基板尺寸小、或並未載置有基板，從而使夾桿31a~夾桿31d的移動立即停止並且對系統控制部70輸出異常信號。系統控制部70接收異常信號，使操作裝置73的顯示部顯示內容為基板尺寸小、或未載置有被曝光基板C的錯誤資訊。 Further, when the clamp lever 31a to the clamp lever 31d move at a low speed and the substrate C is not detected and the low speed is moved for a predetermined period of time, the movement control unit 74 determines that the actual substrate size is smaller than the input substrate size or The substrate is not placed, and the movement of the clamp lever 31a to the clamp lever 31d is immediately stopped and an abnormality signal is output to the system control unit 70. The system control unit 70 receives the abnormality signal, and causes the display unit of the operation device 73 to display the error information that the substrate size is small or the substrate C to be exposed is not placed.

圖10是表示本例示性實施形態的曝光微影系統1中平台10的移動方向與攝影部23的移動方向的關係的圖。如圖10所示，攝影部23的移動方向為在水平方向上相對於平台10的移動方向(Y方向)垂直的方向(X方向)。在由攝影部23對多個紫外線光源51或者微影於被曝光基板C的對準用的標記M進行攝影時，藉由使平台10移動而控制Y方向的位置，藉由使攝影部23移動而控制X方向的位置，藉此以多個位置測量構件52或者對準用的標記M包含於攝影部23的攝影區域的方式來控制各自的相對位置。另外，攝影部23的移動方向並不限定於X方向，只要能夠對位置測量構件52或者微影於被曝光基板C的對準用的標記 M進行攝影即可，能夠沿X方向及Y方向的雙方移動即可，或者能夠沿X方向及Y方向以外的其他方向移動即可。 FIG. 10 is a view showing a relationship between the moving direction of the stage 10 and the moving direction of the imaging unit 23 in the exposure lithography system 1 of the exemplary embodiment. As shown in FIG. 10, the moving direction of the photographing portion 23 is a direction (X direction) perpendicular to the moving direction (Y direction) of the stage 10 in the horizontal direction. When the imaging unit 23 photographs the plurality of ultraviolet light sources 51 or the marks M for alignment of the exposed substrate C, the position of the Y direction is controlled by moving the stage 10, and the imaging unit 23 is moved. The position in the X direction is controlled, whereby the respective relative positions are controlled such that the plurality of position measuring members 52 or the markings M for alignment are included in the imaging region of the imaging unit 23. Further, the moving direction of the photographing unit 23 is not limited to the X direction, as long as the position measuring member 52 or the mark for alignment of the substrate C to be exposed can be used. M may be photographed, and it may be moved in both the X direction and the Y direction, or may be moved in other directions than the X direction and the Y direction.

此處，本例示性實施形態的曝光微影系統1中，為了藉由紫外線光源51的位置來進行微影於第1面C1的圖像與微影於第2面C2的圖像的相互的位置對準，而藉由位置測量構件52測量紫外線光源51的位置。 Here, in the exposure lithography system 1 of the present exemplary embodiment, in order to perform lithography on the first surface C1 and the lithography on the second surface C2 by the position of the ultraviolet light source 51, The position is aligned, and the position of the ultraviolet light source 51 is measured by the position measuring member 52.

圖11是表示本例示性實施形態的第1曝光微影裝置2中載置著被曝光基板C的平台10的示意正視圖及詳細圖。另外，後述的圖12是表示以圖11的a-a剖面切斷所得的示意剖面圖的圖。 FIG. 11 is a schematic front view and a detailed view showing a stage 10 on which the substrate C to be exposed is placed in the first exposure lithography apparatus 2 of the exemplary embodiment. In addition, FIG. 12 which will be described later is a schematic cross-sectional view taken along the line a-a of FIG. 11 .

如圖11所示，在平台10上載置著被曝光基板C，且被曝光基板C的端部藉由基板夾緊機構30的夾持器33而固定的狀態下，在自正面觀察平台10時，紫外線光源51位於被曝光基板C的背部，因此無法目測確認，而位置測量構件52的位置識別用標記52a的各個配置於不與被曝光基板C重疊的位置，因而可進行目測確認。 As shown in FIG. 11, in the state in which the substrate C to be exposed is placed on the stage 10, and the end portion of the exposed substrate C is fixed by the holder 33 of the substrate clamping mechanism 30, when the stage 10 is viewed from the front. Since the ultraviolet light source 51 is located on the back side of the substrate C to be exposed, it cannot be visually confirmed, and each of the position identification marks 52a of the position measuring member 52 is disposed at a position that does not overlap the substrate C to be exposed, and thus visual inspection can be performed.

而且，如圖11所示，將1個紫外線光源51與1個位置測量構件52(2個位置識別用標記52a)分別加以組合，在各組中以紫外線光源51與各個位置識別用標記52a分別成為已知的位置關係的方式來設置。而且，各個位置識別用標記52a與紫外線光源51的位置關係預先進行測量且記憶於系統控制部70所具有的記憶機構中。藉此，即便在紫外線光源51位於被曝光基板C的背 部的情況下等無法直接測量紫外線光源51的位置時，藉由對各個位置識別用標記52a的位置進行測量，而可根據所測量的各個位置與所記憶的各個位置識別用標記52a及紫外線光源51的位置關係，來導出紫外線光源51的位置。 In addition, as shown in FIG. 11, one ultraviolet light source 51 and one position measuring member 52 (two position recognition marks 52a) are combined, and each of the groups is replaced by an ultraviolet light source 51 and each position identifying mark 52a. Set to become a known location relationship. Further, the positional relationship between each of the position recognition marks 52a and the ultraviolet light source 51 is measured in advance and stored in the memory mechanism of the system control unit 70. Thereby, even if the ultraviolet light source 51 is located on the back of the substrate C to be exposed In the case of the portion, when the position of the ultraviolet light source 51 cannot be directly measured, the position of each position recognition mark 52a is measured, and each position and the stored position identification mark 52a and the ultraviolet light source can be measured based on the measured position. The positional relationship of 51 is used to derive the position of the ultraviolet light source 51.

另外，本例示性實施形態中，為了包含旋轉成分在內而正確地導出紫外線光源51的位置，而設置2個以上的位置識別用標記52a，但並不限定於此，只要位置識別用標記52a的形狀為可特別規定紫外線光源51所在的方向的形狀的標記，且位置識別用標記52a與紫外線光源51的距離被預先測量並加以記憶，則可根據1個位置識別用標記52a來導出紫外線光源51的位置，因此位置識別用標記52a亦可為1個。 Further, in the exemplary embodiment, two or more position recognition marks 52a are provided in order to accurately derive the position of the ultraviolet light source 51 including the rotation component. However, the present invention is not limited thereto, and the position recognition mark 52a is not limited thereto. The shape is a mark that can specify the shape of the direction in which the ultraviolet light source 51 is located, and the distance between the position recognition mark 52a and the ultraviolet light source 51 is measured and stored in advance, and the ultraviolet light source can be derived based on one position identification mark 52a. Since the position of 51 is 51, the position identification mark 52a may be one.

而且，4組分別相對應的紫外線光源51及位置識別用標記52a中的2組紫外線光源51及位置識別用標記52a，在載置著矩形狀的被曝光基板C的載置區域，在與被曝光基板C的一方的相對向的邊平行(例如Y方向)且不通過載置區域的中央的位置，以分別成為同一直線狀的方式而設置。其他2組紫外線光源51及位置識別用標記52a亦於載置著矩形狀的被曝光基板C的載置區域，在與被曝光基板C的另一方的相對向的邊平行(例如X方向)且不通過載置區域的中央的位置，以分別成為同一直線狀的方式而設置。藉此，關於在Y方向上延伸的同一直線狀的2組紫外線光源51及位置識別用標記52a，藉由使平台10沿Y方向移動而可藉由1個攝影部23進行攝影。此時，如上述般各個紫外線光源 51及位置識別用標記52a以成為不通過載置區域的中央的同一直線狀的方式而設置，藉此，可根據紫外線光源51或者位置識別用標記52a的位置來識別被曝光基板C的左右方向或上下方向。 In the four sets of the ultraviolet light source 51 and the position identification mark 52a, the two sets of the ultraviolet light source 51 and the position identification mark 52a are placed on the mounting area of the rectangular exposed substrate C. One of the opposing sides of the exposure substrate C is parallel (for example, in the Y direction) and is provided so as not to pass through the center of the placement region, and is formed in the same straight line shape. The other two sets of the ultraviolet light source 51 and the position identification mark 52a are also placed on the mounting area of the rectangular exposed substrate C, and are parallel to the opposite side of the exposed substrate C (for example, the X direction). The positions are not provided in the center of the placement area, and are provided in the same straight line shape. Thereby, the two linear ultraviolet light sources 51 and the position recognition marks 52a extending in the Y direction can be imaged by one imaging unit 23 by moving the stage 10 in the Y direction. At this time, each of the ultraviolet light sources as described above 51 and the position recognition mark 52a are provided so as not to pass through the same straight line at the center of the placement area, whereby the left and right direction of the exposed substrate C can be identified based on the positions of the ultraviolet light source 51 or the position recognition mark 52a. Or up and down direction.

進而，各個紫外線光源51可在載置著矩形狀的被曝光基板C的載置區域的各邊的中央附近，形成對準用的標記M。藉此，可減小對被曝光基板C的第1面C1及第2面C2微影時的位置對準的誤差，從而可提高位置對準的精度。 Further, each of the ultraviolet light sources 51 can form an alignment mark M in the vicinity of the center of each side of the mounting region on which the rectangular exposed substrate C is placed. Thereby, the error in the alignment of the first surface C1 and the second surface C2 of the substrate C to be exposed can be reduced, and the accuracy of the alignment can be improved.

此外，在藉由使1個位置測量構件52的多個位置識別用標記52的每一者在相對於平台10的移動方向垂直的X方向上並列，且伴隨平台10的移動而由攝影部23進行攝影時，是在相同的時機進行攝影，因此可在相同的時機測量各個位置識別用標記52a的位置。 Further, each of the plurality of position recognition marks 52 of one position measuring member 52 is juxtaposed in the X direction perpendicular to the moving direction of the stage 10, and is accompanied by the photographing portion 23 accompanying the movement of the stage 10. When photographing is performed, photographing is performed at the same timing, and therefore the position of each position recognizing mark 52a can be measured at the same timing.

此處，在被曝光基板上產生翹曲或應變的情況下，在現有的曝光微影裝置的平台載置被曝光基板的狀態下，當被曝光基板的端部自平台浮起而欲在被曝光基板的端部形成對準用的標記時，難以將對準用的標記正確地形成在預測的位置。另一方面，本例示性實施形態中，如上述般，利用基板夾緊機構30的夾持器33將載置於平台10的被曝光基板C的端部夾持並固定於該夾持器33與平台10之間，藉此可防止被曝光基板C的端部自平台10浮起。 Here, in the case where warpage or strain is generated on the substrate to be exposed, in the state in which the substrate to be exposed is placed on the stage of the conventional exposure lithography apparatus, when the end portion of the substrate to be exposed is floated from the stage, it is intended to be When the end portion of the exposure substrate forms a mark for alignment, it is difficult to accurately form the mark for alignment at the predicted position. On the other hand, in the exemplary embodiment, as described above, the end portion of the substrate C to be exposed placed on the stage 10 is sandwiched and fixed to the holder 33 by the holder 33 of the substrate clamping mechanism 30. Between the platform 10 and the platform 10, the end of the exposed substrate C can be prevented from floating from the platform 10.

圖12是用以說明在本例示性實施形態的第1曝光微影裝置2中將載置於平台10的被曝光基板C的端部藉由基板夾緊機 構30而固定的流程的示意側面圖。 FIG. 12 is a view showing a substrate clamping machine for placing the end portion of the exposed substrate C placed on the stage 10 in the first exposure lithography apparatus 2 of the exemplary embodiment. A schematic side view of a process that is fixed by 30.

如圖12的(1)所示，在平台10的上表面載置著被曝光基板C的狀態下，如圖12的(2)所示，夾持器33為了在其與平台10之間夾入被曝光基板C的端部而向上方移動並停止。而且，如圖12的(3)所示，夾持器33在沿著平台10的上表面的平面內移動，當移動至與被曝光基板C的端部在Z方向上重合的位置為止後停止時，如圖12的(4)所示，然後夾持器33向下方移動，且在其與平台10之間夾入被曝光基板C的端部的狀態下停止。藉此，被曝光基板C的端部被固定在平台10與夾持器33之間。如此，在夾入並固定被曝光基板C的端部的狀態下對被曝光基板C照射紫外線光源UV從而形成對準用的標記M，藉此可一直在正確的位置以正確的形狀而形成對準用的標記M。 As shown in (1) of FIG. 12, in a state where the substrate C to be exposed is placed on the upper surface of the stage 10, as shown in (2) of FIG. 12, the holder 33 is sandwiched between it and the stage 10. The end portion of the substrate C to be exposed is moved upward and stopped. Further, as shown in (3) of FIG. 12, the holder 33 moves in a plane along the upper surface of the stage 10, and stops after moving to a position overlapping the end portion of the substrate C to be exposed in the Z direction. At the time, as shown in (4) of FIG. 12, the holder 33 is then moved downward, and is stopped in a state where the end portion of the substrate C to be exposed is sandwiched between the stage and the stage 10. Thereby, the end portion of the substrate C to be exposed is fixed between the stage 10 and the holder 33. In this manner, the exposed substrate C is irradiated with the ultraviolet light source UV in a state in which the end portion of the substrate C to be exposed is sandwiched and fixed, thereby forming the mark M for alignment, whereby the alignment can be formed in the correct shape at the correct position. Mark M.

圖13A是表示在現有的曝光微影裝置中載置著被曝光基板的平台的示意正視圖，圖13B是表示以圖13A的b-b剖面切斷所得的示意剖面圖的圖。 13A is a schematic front view showing a stage on which an exposed substrate is placed in a conventional exposure lithography apparatus, and FIG. 13B is a schematic cross-sectional view showing a cross section taken along line b-b of FIG. 13A.

如圖13A所示，在平台載置著被曝光基板的狀態下，在平台上的設置著插通孔的區域，被曝光基板未吸附固定於平台。由此，如圖13B所示，有被曝光基板在設置著插通孔的區域自平台應變而浮起的可能性。該情況下，現有的曝光微影裝置中，在被曝光基板應變的狀態下進行曝光微影，藉此曝光微影失敗而產生次品。 As shown in FIG. 13A, in a state where the substrate to be exposed is placed on the stage, a region where the insertion hole is provided on the stage, the exposed substrate is not adsorbed and fixed to the stage. Thereby, as shown in FIG. 13B, there is a possibility that the substrate to be exposed floats from the stage in the region where the insertion hole is provided. In this case, in the conventional exposure lithography apparatus, exposure lithography is performed in a state where the exposed substrate is strained, whereby the lithography failure is caused to cause a defective product.

本例示性實施形態的第1曝光微影裝置2中，利用基板 夾緊機構30來固定被曝光基板C的端部，藉此可消除被曝光基板C的設置著插通孔37的區域的應變。 In the first exposure lithography apparatus 2 of the exemplary embodiment, the substrate is used. The clamp mechanism 30 fixes the end of the substrate C to be exposed, whereby the strain of the region of the exposed substrate C where the insertion hole 37 is provided can be eliminated.

然後，對本例示性實施形態的曝光微影系統1的曝光微影處理流程進行說明。 Next, the flow of the exposure lithography process of the exposure lithography system 1 of the present exemplary embodiment will be described.

圖14是表示本例示性實施形態的曝光前處理程式的處理流程的流程圖，該程式預先記憶於第1曝光微影裝置2的系統控制部70中所具備的作為記錄媒體的ROM的規定區域。而且，圖15是用於說明本例示性實施形態的曝光前處理的示意正視圖。 FIG. 14 is a flowchart showing a flow of a process of the pre-exposure processing program of the exemplary embodiment, which is stored in advance in a predetermined area of the ROM as a recording medium provided in the system control unit 70 of the first exposure lithography apparatus 2. . Further, Fig. 15 is a schematic front view for explaining pre-exposure processing in the exemplary embodiment.

第1曝光微影裝置2的系統控制部70在預定的時機(本例示性實施形態中，是在被曝光基板C載置於平台10的時機)，執行該曝光前處理程式。 The system control unit 70 of the first exposure lithography apparatus 2 executes the pre-exposure processing program at a predetermined timing (in the exemplary embodiment, the timing at which the substrate C to be exposed is placed on the stage 10).

當被曝光基板C載置於平台10時，步驟S101中，系統控制部70使紫外線光源51相對於被曝光基板C的位置移動。本例示性實施形態中，與基板夾緊機構部30的移動單元32a~移動單元32d的移動聯動地移動。因此，系統控制部70藉由對移動單元32a進行控制，而開始打開狀態的夾桿31a~夾桿31d的自平台10的端部向中央部的移動而使紫外線光源51的位置移動，並且在自光感測器49接收到有基板信號的情況下，在接收到的位置或者從接收到開始直接移動規定距離後的位置處，使夾桿31a~夾桿31d以閉合狀態移行。藉此，夾桿31a~夾桿31d在其與平台10之間夾入著被曝光基板C的狀態下被固定，隨之，紫外線光源51的位置亦被固定。 When the substrate C to be exposed is placed on the stage 10, the system control unit 70 moves the position of the ultraviolet light source 51 with respect to the substrate C to be exposed in step S101. In the exemplary embodiment, the movement of the moving unit 32a to the moving unit 32d of the substrate clamping mechanism unit 30 is moved in conjunction with the movement. Therefore, the system control unit 70 controls the moving unit 32a to start the movement of the end portions of the clamp lever 31a to the clamp lever 31d from the end portion of the platform 10 toward the center portion to move the position of the ultraviolet light source 51, and When the photosensor 49 receives the substrate signal, the clamp lever 31a to the clamp lever 31d are moved in the closed state at the received position or at a position directly shifted by a predetermined distance from the start of reception. As a result, the clamp lever 31a to the clamp lever 31d are fixed in a state in which the exposed substrate C is sandwiched between the clamp lever 31a and the stage 10, and the position of the ultraviolet light source 51 is also fixed.

步驟S103中，系統控制部70藉由攝影部23對多個位置識別用標記52a的各個進行攝影，並根據該攝影圖像而測量位置識別用標記52a的位置，根據所測量的位置識別用標記52a的位置來導出紫外線光源51的位置。另外，測量紫外線光源51的位置的方法並不限定於上述方法，亦可為如下方法，即，夾桿31a~夾桿31d與紫外線光源51的位置關係為已知，對夾桿31a~夾桿31d的位置進行測量，並根據夾桿31a~夾桿31d與紫外線光源51的相對位置而導出紫外線光源51的位置。該情況下，系統控制部70獲取皮帶驅動馬達75所具備的步進馬達的脈衝，藉此來測量夾桿31a~夾桿31d的位置。 In step S103, the system control unit 70 captures each of the plurality of position recognition marks 52a by the imaging unit 23, and measures the position of the position recognition mark 52a based on the captured image, and based on the measured position recognition mark. The position of 52a is used to derive the position of the ultraviolet light source 51. Further, the method of measuring the position of the ultraviolet light source 51 is not limited to the above method, and the positional relationship between the clamp lever 31a to the clamp rod 31d and the ultraviolet light source 51 may be known, and the clamp lever 31a to the clamp lever may be used. The position of 31d is measured, and the position of the ultraviolet light source 51 is derived based on the relative positions of the clamp lever 31a to the clamp rod 31d and the ultraviolet light source 51. In this case, the system control unit 70 acquires the pulse of the stepping motor provided in the belt drive motor 75, thereby measuring the positions of the clamp lever 31a to the clamp lever 31d.

而且，步驟S105中，系統控制部70在平台10上設定相對應的座標系(以下，稱作「平台座標系」)，而結束曝光前處理程式。如圖15所示，在曝光前處理的階段，在平台座標系中預定的位置處配置各個紫外線光源51。 Further, in step S105, the system control unit 70 sets a corresponding coordinate system (hereinafter referred to as "platform coordinate system") on the platform 10, and ends the pre-exposure processing program. As shown in Fig. 15, at the stage of the pre-exposure processing, the respective ultraviolet light sources 51 are disposed at predetermined positions in the platform coordinate system.

第1曝光微影裝置2的系統控制部70在曝光前處理結束的時機，執行第1曝光處理。圖16是表示本例示性實施形態的第1曝光處理程式的處理流程的流程圖，該程式預先記憶於第1曝光微影裝置2的系統控制部70中所具備的作為記錄媒體的ROM的規定區域。而且，圖17是用於說明本例示性實施形態的第1曝光處理的示意正視圖。 The system control unit 70 of the first exposure lithography apparatus 2 executes the first exposure processing at the timing when the pre-exposure processing is completed. FIG. 16 is a flowchart showing a flow of a process of the first exposure processing program according to the exemplary embodiment of the present invention, and the program is stored in advance in the ROM as a recording medium provided in the system control unit 70 of the first exposure lithography device 2. region. Fig. 17 is a schematic front view for explaining a first exposure process of the exemplary embodiment.

步驟S201中，系統控制部70根據步驟S103中測量的紫外線光源51的位置，而設定用於對被曝光基板C微影表面用圖 像P1的座標系即圖像座標系。如圖15所示，在第1曝光處理的階段，根據紫外線光源51相對於平台座標系的位置來設定圖像座標系。亦可對任意的圖像座標系導入紫外線光源51的位置。 In step S201, the system control unit 70 sets a map for the lithographic surface of the substrate C to be exposed, based on the position of the ultraviolet light source 51 measured in step S103. The coordinate system like P1 is the image coordinate system. As shown in FIG. 15, at the stage of the first exposure processing, the image coordinate system is set in accordance with the position of the ultraviolet light source 51 with respect to the platform coordinate system. The position of the ultraviolet light source 51 can also be introduced to any image coordinate system.

步驟S203中，系統控制部70根據步驟S201中設定的圖像座標系，而使平台10向曝光位置移動。此時，系統控制部70使平台10沿著導軌14而在X方向上移動，並且使平台10移動至曝光頭16a的曝光對象位置與在被曝光基板C中微影表面用圖像P1時的開始位置一致的位置為止。 In step S203, the system control unit 70 moves the stage 10 to the exposure position based on the image coordinate system set in step S201. At this time, the system control unit 70 moves the stage 10 in the X direction along the guide rail 14, and moves the stage 10 to the exposure target position of the exposure head 16a and the image P1 for the lithographic surface in the substrate C to be exposed. The position where the starting position is consistent.

步驟S205中，系統控制部70開始藉由各曝光頭16a而進行的曝光，將表面用圖像P1微影於被曝光基板C的表面C1的基於步驟S201中設定的圖像座標系的位置。而且，步驟S207中，系統控制部20使紫外線光源51產生紫外線光束UV，在被曝光基板C的背面C2微影對準用的標記M。另外，步驟205的對被曝光基板C的表面C1的處理與步驟S207的對被曝光基板C的背面C2的處理為不妨礙相互的處理者，可使上述各處理同時並行地進行，因而可同時進行步驟S205及步驟S207的處理，或者可在步驟S205的處理之前進行步驟S207的處理。如圖17所示，根據圖像座標系，在被曝光基板C的表面C1微影表面用圖像P1，在背面C2微影對準用的標記M。 In step S205, the system control unit 70 starts exposure by each exposure head 16a, and lithographically images the surface image P1 on the surface C1 of the substrate C to be exposed based on the position of the image coordinate system set in step S201. Further, in step S207, the system control unit 20 causes the ultraviolet light source 51 to generate the ultraviolet light beam UV, and aligns the mark M for lithography on the back surface C2 of the substrate C to be exposed. Further, the processing of the surface C1 of the substrate C to be exposed in step 205 and the processing of the back surface C2 of the substrate C to be exposed in step S207 are performed so as not to interfere with each other, and the above-described respective processes can be simultaneously performed in parallel, and thus simultaneously The processing of step S205 and step S207 is performed, or the processing of step S207 may be performed before the processing of step S205. As shown in Fig. 17, according to the image coordinate system, the image P1 for the lithographic surface on the surface C1 of the substrate C to be exposed is used, and the mark M for lithography alignment on the back surface C2.

如此，在對被曝光基板C的表面C1微影表面用圖像P1的處理中，在背面C2微影對準用的標記M，藉此無須另外進行微影對準用的標記M的處理，因此，不會對曝光微影處理的週期時 間造成影響，而可確保對準用的標記M的烘烤的保持時間(holding time)長，從而可提高對背面C2的微影處理中的對準用的標記M的攝影圖像的對比度，因此可抑制對準用的標記M的識別偏差。 As described above, in the process of lithographic surface image P1 on the surface C1 of the substrate C to be exposed, the mark M for lithography alignment on the back surface C2 does not require the processing of the mark M for lithography. Does not deal with the cycle of exposure lithography In addition, it is possible to ensure that the holding time of the baking of the marking M for alignment is long, so that the contrast of the photographic image of the marking M for alignment in the lithography processing of the back surface C2 can be improved, and thus The recognition deviation of the mark M for alignment is suppressed.

另外，對準用的標記M在被紫外線光束UV照射後進行烘烤，藉此在被曝光基板C上可目測確認地進行顯示，因此由攝影部23進行攝影，藉此可確認上述對準用的標記M的位置或形狀。 In addition, since the mark M for alignment is baked by the ultraviolet light beam UV and is displayed on the substrate C to be exposed, the image can be visually confirmed. Therefore, the image pickup unit 23 can perform the image pickup, thereby confirming the mark for alignment. The position or shape of the M.

步驟S209中，系統控制部70使平台10移動至載置著被曝光基板C的位置為止，並結束第1曝光處理程式。當平台10移動至被曝光基板C的載置位置為止時，被曝光基板C藉由吸附保持於AC掌62而移動至第2搬送裝置6，而且，被曝光基板C藉由第2搬送裝置6而搬送至反轉裝置3，且在藉由反轉裝置3而表背反轉之後，藉由第3搬送裝置7搬送至第2曝光微影裝置4。 In step S209, the system control unit 70 moves the stage 10 to the position where the substrate C to be exposed is placed, and ends the first exposure processing program. When the stage 10 is moved to the placement position of the substrate C to be exposed, the exposed substrate C is moved to the second transfer device 6 by being held by the AC palm 62, and the exposed substrate C is moved by the second transfer device 6 The conveyance to the reversing device 3 is reversed by the reversing device 3, and then conveyed to the second exposure lithography device 4 by the third conveying device 7.

第2曝光微影裝置4的系統控制部70在預定的時機(本例示性實施形態中，在被曝光基板C載置於平台10的時機)，執行該曝光前處理程式。 The system control unit 70 of the second exposure lithography apparatus 4 executes the pre-exposure processing program at a predetermined timing (in the exemplary embodiment, the timing at which the substrate C to be exposed is placed on the stage 10).

圖18是表示本例示性實施形態的第2曝光處理程式的處理流程的流程圖，該程式預先記憶於第2曝光微影裝置4的系統控制部70中所具備的作為記錄媒體的ROM的規定區域。而且，圖19是用於說明本例示性實施形態的第2曝光處理的示意正視圖 FIG. 18 is a flowchart showing a flow of a process of the second exposure processing program of the exemplary embodiment, which is stored in advance in the ROM as a recording medium included in the system control unit 70 of the second exposure lithography device 4. region. 19 is a schematic front view for explaining a second exposure process of the exemplary embodiment.

步驟S301中，系統控制部70使載置有被曝光基板C的平台10移動至如下的位置，即，步驟S207中微影的對準用的標記M的整體包含於攝像裝置23的攝像圖像的位置。此時，系統控 制部70使平台10沿著導軌14而在Y方向上移動，並且使平台10移動至如下位置為止，即，設置有攝影部23的位置與設置有對準用的標記M的位置在Y方向上大致一致的位置為止。 In step S301, the system control unit 70 moves the stage 10 on which the substrate C to be exposed is placed to a position in which the entire mark M for alignment of the lithography is included in the captured image of the image pickup device 23 in step S207. position. At this time, the system control The portion 70 moves the stage 10 along the guide rail 14 in the Y direction, and moves the stage 10 to a position where the position of the photographing portion 23 and the position where the mark M for alignment is provided are in the Y direction. The position is roughly the same.

另外，攝影部23的攝影區域為被曝光基板C的背面C2上設置著對準用的標記M的區域，且設為比包含被曝光基板C的設置誤差的區域大。藉此，即便在被曝光基板C的設置位置自預先設定的設置位置偏移的情況下，只要以設定為對準用的標記M的中心部所在的位置為中心進行攝影，則包含於區域攝影部23的攝影區域。 In addition, the imaging area of the imaging unit 23 is a region in which the alignment mark M is provided on the back surface C2 of the substrate C to be exposed, and is larger than a region including the installation error of the substrate C to be exposed. In this case, even if the installation position of the substrate C to be exposed is shifted from the preset installation position, the image capturing unit is included in the area where the center portion of the mark M for alignment is set. 23 photography area.

步驟S303中，系統控制部70根據藉由攝影部23攝像對準用的標記M所得的攝像圖像，來測量對準用的標記M的位置。而且，步驟S305中，系統控制部70根據步驟S303中測量到的對準用的標記M的位置，來設定用以決定對於被曝光基板C的背面C2微影背面用圖像P2的位置的圖像座標系。此時，圖像座標系以與步驟S201中設定的圖像座標系相對應的方式來設定，亦即，以如下方式來設定：步驟S103中測量到的紫外線光源51的位置與表面用圖像P1的微影位置的相對位置，和對準用的標記M的位置與背面用圖像P2的微影位置的相對位置相互對應。如圖19所示，在第2曝光處理的階段，根據對準用的標記M的位置來設定圖像座標系，因此亦存在如下情形：平台座標系與圖像座標系的相對位置與第1曝光處理的階段不同。 In step S303, the system control unit 70 measures the position of the alignment mark M based on the captured image obtained by the imaging unit 23 capturing the alignment mark M. Further, in step S305, the system control unit 70 sets an image for determining the position of the back surface C2 lithography back image P2 for the substrate C to be exposed, based on the position of the alignment mark M measured in step S303. Coordinate system. At this time, the image coordinates are set in a manner corresponding to the image coordinate system set in step S201, that is, set in such a manner that the position of the ultraviolet light source 51 and the surface image measured in step S103 are as follows. The relative position of the lithography position of P1, and the position of the mark M for alignment and the relative position of the lithography position of the image P2 for back surface correspond to each other. As shown in FIG. 19, at the stage of the second exposure processing, the image coordinate system is set according to the position of the mark M for alignment. Therefore, there is also a case where the relative position of the platform coordinate system and the image coordinate system and the first exposure are as follows. The stages of processing are different.

步驟S307中，系統控制部70根據步驟S305中設定的 圖像座標系，使平台10移動至曝光位置。此時，系統控制部70使平台10沿著導軌14而在Y方向上移動，並且，使平台10移動至曝光頭16a的曝光對象位置與被曝光基板C中微影背面用圖像P2時的開始位置一致的位置為止。 In step S307, the system control unit 70 sets the value according to step S305. The image coordinate system moves the platform 10 to the exposure position. At this time, the system control unit 70 moves the stage 10 in the Y direction along the guide rail 14, and moves the stage 10 to the exposure target position of the exposure head 16a and the image of the lithographic back surface image P2 in the substrate C to be exposed. The position where the starting position is consistent.

步驟S309中，系統控制部70開始藉由各曝光頭16a進行曝光，在被曝光基板C的背面C2微影背面用圖像P2。如圖17所示，根據圖像座標系，在被曝光基板C的背面C2微影背面用圖像P2。 In step S309, the system control unit 70 starts exposure by each exposure head 16a, and lithographic back image P2 is formed on the back surface C2 of the substrate C to be exposed. As shown in FIG. 17, the image P2 for the lithography back surface is on the back surface C2 of the substrate C to be exposed according to the image coordinate system.

步驟S311中，系統控制部70使平台10移動至載置著被曝光基板C的位置為止，並結束第2曝光處理程式。當平台10移動至被曝光基板C的載置位置為止時，在表面C1以及背面C2的兩面已微影出圖像的被曝光基板C藉由吸附保持於AC掌62而移動至第4搬送裝置8，且藉由第4搬送裝置8而搬送。 In step S311, the system control unit 70 moves the stage 10 to the position where the substrate C to be exposed is placed, and ends the second exposure processing program. When the stage 10 is moved to the placement position of the substrate C to be exposed, the exposed substrate C having the image on both sides of the front surface C1 and the back surface C2 is moved to the AC palm 62 by suction and moved to the fourth transfer device. 8. It is transported by the fourth transport device 8.

圖19是表示在本例示性實施形態的曝光微影系統1中，被曝光基板C的尺寸與對準用的標記M的微影位置的關係的示意正視圖。本例示性實施形態中，當藉由基板夾緊機構部30的移動單元32a~移動單元32d而夾桿31a~夾桿31d移動時，紫外線光源51與該移動聯動地移動。因此，如圖19所示，光感測器49檢測被曝光基板C的端部而夾桿31a~夾桿31d將被曝光基板C的端部予以固定，藉此紫外線光源51自動地固定於對被曝光基板C的端部照射紫外線光束UV的位置。而且，夾桿31a~夾桿31d的位置與紫外線光源51的位置關係可自由地設計。由此，本 例示性實施形態中，可不依存於被曝光基板C的尺寸，而在被曝光基板C的預定的位置微影對準用的標記M。 FIG. 19 is a schematic front view showing the relationship between the size of the substrate C to be exposed and the lithography position of the mark M for alignment in the exposure lithography system 1 of the exemplary embodiment. In the exemplary embodiment, when the clamp lever 31a to the clamp lever 31d are moved by the moving unit 32a to the moving unit 32d of the substrate clamping mechanism unit 30, the ultraviolet light source 51 moves in conjunction with the movement. Therefore, as shown in FIG. 19, the photo sensor 49 detects the end of the substrate C to be exposed, and the clips 31a to 31d fix the end portion of the exposed substrate C, whereby the ultraviolet light source 51 is automatically fixed to the pair. The end portion of the exposed substrate C is irradiated with a position of the ultraviolet light beam UV. Further, the positional relationship between the positions of the clamp bars 31a to 31d and the ultraviolet light source 51 can be freely designed. Thus, this In the exemplary embodiment, the mark M for lithography alignment at a predetermined position of the substrate C to be exposed can be made without depending on the size of the substrate C to be exposed.

另外，步驟S103中對紫外線光源51的位置進行測量的方法根據所求出的測量精度而有所不同，基板夾緊機構部30的移動單元32a~移動單元32d亦可包括步進馬達，藉由該步進馬達的脈衝來測量位置。或者，移動單元32a~移動單元32d亦可包括旋轉編碼器(rotary encoder)，藉由旋轉編碼器的脈衝來測量位置。或者，亦可預先在第1曝光微影裝置2的任一部位設置光學式距離感測器或者利用了超音波的距離感測器，藉由該些距離感測器來測量位置。 Further, the method of measuring the position of the ultraviolet light source 51 in step S103 differs depending on the obtained measurement accuracy, and the moving unit 32a to the moving unit 32d of the substrate clamping mechanism unit 30 may also include a stepping motor. The pulse of the stepper motor measures the position. Alternatively, the mobile unit 32a to the mobile unit 32d may also include a rotary encoder that measures the position by rotating the pulses of the encoder. Alternatively, an optical distance sensor or a distance sensor using ultrasonic waves may be provided in any part of the first exposure lithography apparatus 2 in advance, and the position may be measured by the distance sensors.

在使用位置識別用標記52a來測量紫外線光源51的位置的情況下，即便無法對紫外線光源51進行攝影，只要可藉由攝影部23對2個以上的位置識別用標記進行攝影即可，因此，對紫外線光源51的位置進行測量的時機並不限定於步驟S103的時機，在前處理或者第1曝光處理的任一時機對紫外線光源51的位置進行測量即可。 When the position of the ultraviolet light source 51 is measured using the position identification mark 52a, even if the ultraviolet light source 51 cannot be imaged, it is only necessary to capture two or more position recognition marks by the imaging unit 23. The timing of measuring the position of the ultraviolet light source 51 is not limited to the timing of step S103, and the position of the ultraviolet light source 51 may be measured at any timing of the pre-processing or the first exposure processing.

而且，在根據自攝影圖像中的紫外線光源51的位置的理論值偏離的偏離量來測量紫外線光源51的位置時，較佳為紫外線光源51位於攝影部23的焦點深度內，而在紫外線光源51不位於攝影部23的焦點深度內的情況下，能夠以紫外線光源51位於攝影部23的焦點深度內的方式變更平台10的高度(Z方向上的位置)。 Further, when the position of the ultraviolet light source 51 is measured based on the amount of deviation of the theoretical value of the position of the ultraviolet light source 51 in the self-photographed image, it is preferable that the ultraviolet light source 51 is located within the depth of focus of the photographing portion 23, and the ultraviolet light source is When the 51 is not located within the depth of focus of the imaging unit 23, the height (position in the Z direction) of the stage 10 can be changed such that the ultraviolet light source 51 is positioned within the depth of focus of the imaging unit 23.

而且，本例示性實施形態中，微影2個對準用的標記M，但並不限定於此，對準用的標記M的數量只要為2個以上則可任意地設定。對準用的標記M的數量越多，則越可提高被曝光基板C的表背的對準精度。 Further, in the exemplary embodiment, the two marks M for lithography are not limited thereto, and the number of the marks M for alignment may be arbitrarily set as long as they are two or more. The larger the number of the marks M for alignment, the more the alignment accuracy of the front and back of the substrate C to be exposed can be improved.

而且，本例示性實施形態中，是使用紫外線光源51在被曝光基板C上微影對準用的標記M，但並不限定於此，亦可藉由噴附油墨或轉印油墨來進行微影。 Further, in the exemplary embodiment, the mark M for lithographic alignment on the substrate C to be exposed is used by the ultraviolet light source 51. However, the present invention is not limited thereto, and lithography may be performed by spraying ink or transfer ink. .

而且，本例示性實施形態中，紫外線光源51在X方向上或在Y方向上可移動地設置著，但並不限定於此，亦可使用在任意方向上可移動的紫外線光源。而且，紫外線光源的移動路徑可為橫切被曝光基板C的中央部的路徑，亦可為橫切被曝光基板C的任意位置的路徑。 Further, in the exemplary embodiment, the ultraviolet light source 51 is movably provided in the X direction or in the Y direction. However, the present invention is not limited thereto, and an ultraviolet light source movable in any direction may be used. Further, the moving path of the ultraviolet light source may be a path that crosses the central portion of the substrate C to be exposed, or may be a path that crosses the arbitrary position of the substrate C to be exposed.

本例示性實施形態中，紫外線光源51與夾緊機構部30的移動單元32a~移動單元32d聯動地移動，但並不限定於此，亦可藉由包含馬達等的移動機構而使紫外線光源51分別單獨地移動。該情況下，預先記憶被曝光基板C的尺寸及平台10的載置位置，紫外線光源51可設定為根據所記憶的尺寸及載置位置而移動至預定的位置。 In the exemplary embodiment, the ultraviolet light source 51 moves in conjunction with the moving unit 32a to the moving unit 32d of the clamp mechanism unit 30. However, the present invention is not limited thereto, and the ultraviolet light source 51 may be provided by a moving mechanism including a motor or the like. Move separately. In this case, the size of the substrate C to be exposed and the placement position of the stage 10 are memorized in advance, and the ultraviolet light source 51 can be set to move to a predetermined position in accordance with the stored size and the placement position.

而且，在步驟S205中表面用圖像P1的微影失敗的情況下，亦可不進行步驟S207的處理(對準用的標記M的微影處理)，而轉移至步驟S209的處理。該情況下，在表面用圖像P1的微影失敗的被曝光基板C上未微影有對準用的標記M，因此用戶可藉 由對各個被曝光基板C確認有無對準用的標記M，來判別表面用圖像P1的微影成功或失敗。 When the lithography of the surface image P1 has failed in step S205, the process of step S207 (the lithography process of the mark M for alignment) may not be performed, and the process proceeds to step S209. In this case, the alignment mark M is not micro-imaged on the substrate C to be exposed on which the lithography of the surface image P1 has failed, so the user can borrow The lithography success or failure of the surface image P1 is discriminated by the mark M for confirming the presence or absence of alignment for each of the exposed substrates C.

而且，在步驟S309中微影背面用圖像P2時，可使步驟S305中設定圖像座標系之後的背面用圖像P2顯示於操作裝置73的顯示部。藉此，用戶對在顯示部顯示的背面用圖像P2進行確認，藉此可推測平台座標系與圖像座標系的偏移量。 When the image P2 for back surface lithography is used in step S309, the image P2 for the back surface after the image coordinate system is set in step S305 can be displayed on the display portion of the operation device 73. Thereby, the user confirms the image P2 for the back surface displayed on the display unit, thereby estimating the amount of shift between the platform coordinate system and the image coordinate system.

而且，可將紫外線光源51的移動範圍設為如下範圍，即，包含作為曝光的對象的最小尺寸的基板的端面的位置至最大尺寸的基板的端面的位置為止的範圍。藉此，作為曝光的對象的基板的尺寸無論為何種尺寸，均可藉由紫外線光源51來微影對準用的標記M。 Further, the range of movement of the ultraviolet light source 51 can be set to a range including the position of the end surface of the substrate of the smallest size which is the target of exposure to the position of the end surface of the substrate of the largest size. Thereby, regardless of the size of the substrate to be exposed, the mark M for lithographic alignment by the ultraviolet light source 51 can be used.

而且，本例示性實施形態的曝光微影系統1中，紫外線光源51及位置測量構件52被固定於支持板40(亦即移動單元32)，但並不限定於此，亦可為如下構成，即，紫外線光源51及位置測量構件52相對於移動單元32移動。該情況下，例如，紫外線光源51及位置測量構件52之間亦可***具有馬達等的移動機構而設置於移動單元32。亦即，紫外線光源51及位置測量構件52的相互的位置關係為已知，只要可藉由對位置測量構件52的位置進行測量來導出紫外線光源51的位置即可。從而可不依存於基板夾緊機構30的移動單元32a~移動單元32d的可移動區域，而使紫外線光源51及位置識別構件52移動並在該位置的被曝光基板C上形成對準用的標記M。 Further, in the exposure lithography system 1 of the exemplary embodiment, the ultraviolet light source 51 and the position measuring member 52 are fixed to the support plate 40 (that is, the moving unit 32), but the invention is not limited thereto, and may be configured as follows. That is, the ultraviolet light source 51 and the position measuring member 52 move with respect to the moving unit 32. In this case, for example, a moving mechanism having a motor or the like may be inserted between the ultraviolet light source 51 and the position measuring member 52 to be provided in the moving unit 32. That is, the mutual positional relationship between the ultraviolet light source 51 and the position measuring member 52 is known as long as the position of the ultraviolet light source 51 can be derived by measuring the position of the position measuring member 52. Therefore, the ultraviolet light source 51 and the position recognizing member 52 can be moved without being dependent on the movable region of the moving unit 32a to the moving unit 32d of the substrate clamping mechanism 30, and the mark M for alignment can be formed on the exposed substrate C at the position.

日本申請案2012-082559的揭示的內容通過參考而完整地結合於本說明書。 The disclosure of Japanese Patent Application No. 2012-082559 is hereby incorporated by reference in its entirety in its entirety.

本說明書所記載的所有文獻、專利申請案及技術規格，與具體且分別地記錄藉由參考而結合各個文獻、專利申請案及技術規格的情況同程度地，藉由參考而結合於本說明書中。 All documents, patent applications, and technical specifications described in the specification are specifically and separately recorded in the same manner as the various documents, patent applications, and technical specifications by reference, and are incorporated herein by reference. .

10‧‧‧平台 10‧‧‧ platform

33‧‧‧夾持器 33‧‧‧Clamps

37‧‧‧插通孔 37‧‧‧ inserted through hole

40‧‧‧支持板 40‧‧‧Support board

41‧‧‧空氣氣缸 41‧‧‧Air cylinder

42‧‧‧活塞桿 42‧‧‧ piston rod

51‧‧‧紫外線光源 51‧‧‧UV light source

52‧‧‧位置測量構件 52‧‧‧ position measuring components

C‧‧‧被曝光基板 C‧‧‧ exposed substrate

UV‧‧‧紫外線 UV‧‧‧UV

Y、Z‧‧‧方向 Y, Z‧‧‧ direction

Claims (14)

一種曝光微影裝置，包括：平台，載置被曝光基板；固定部，自預定的第1位置向第2位置移動，於上述第2位置將載置於上述平台的上述被曝光基板的端部夾持並固定於上述固定部與上述平台之間；微影部，在藉由上述固定部而使端部固定的狀態下，對上述被曝光基板的第1面進行曝光，藉此將預定的電路圖案微影於上述第1面上；以及形成部，與上述固定部的移動聯動地移動，在藉由上述固定部而使端部固定的狀態下，在上述被曝光基板的與上述第1面相對向的第2面上形成預定的標記。 An exposure lithography apparatus comprising: a platform on which an exposed substrate is placed; a fixing portion moving from a predetermined first position to a second position, and placing the end portion of the exposed substrate placed on the platform at the second position And being sandwiched and fixed between the fixing portion and the platform; and the lithography portion exposes the first surface of the exposed substrate in a state where the end portion is fixed by the fixing portion, thereby predetermining a circuit pattern is lithographically formed on the first surface; and the forming portion moves in conjunction with the movement of the fixing portion, and the end portion is fixed by the fixing portion, and the first substrate and the first substrate are exposed A predetermined mark is formed on the second surface facing the surface. 如申請專利範圍第1項所述的曝光微影裝置，更包括位置測量部，對上述形成部的位置進行測量。 The exposure lithography apparatus according to claim 1, further comprising a position measuring unit that measures a position of the forming portion. 如申請專利範圍第2項所述的曝光微影裝置，其中在上述平台形成貫通孔，由夾板構成上述固定部，上述夾板通過上述貫通孔而向基板載置側突出，且將上述被曝光基板固定。 The exposure lithography apparatus according to claim 2, wherein a through hole is formed in the stage, and the fixing portion is formed by a plate, and the plate protrudes toward the substrate mounting side through the through hole, and the exposed substrate is used. fixed. 如申請專利範圍第3項所述的曝光微影裝置，其中上述形成部通過上述貫通孔而在上述被曝光基板的上述第2面形成上述標記。 The exposure lithography apparatus according to claim 3, wherein the forming portion forms the mark on the second surface of the substrate to be exposed through the through hole. 如申請專利範圍第4項所述的曝光微影裝置，其中上述形 成部包括出射紫外線光束的光源，使自上述光源出射的紫外線光束通過上述貫通孔而照射至上述被曝光基板的上述第2面，藉此形成上述標記。 An exposure lithography apparatus according to claim 4, wherein the shape is The formation includes a light source that emits an ultraviolet light beam, and the ultraviolet light beam emitted from the light source is irradiated onto the second surface of the exposed substrate through the through hole, thereby forming the mark. 如申請專利範圍第2項至第5項中任一項所述的曝光微影裝置，其中上述位置測量部在上述各個形成部具有基準部，其中上述基準部與上述形成部的移動聯動地移動，並作為上述形成部的位置的基準，且上述基準部設置於如下位置，即，在上述平台上載置著上述被曝光基板的狀態下，露出在上述被曝光基板的外部的位置。 The exposure lithography apparatus according to any one of the second aspect, wherein the position measuring unit has a reference portion in each of the forming portions, wherein the reference portion moves in conjunction with movement of the forming portion. The reference portion is provided at a position where the substrate to be exposed is placed on the platform, and is exposed to the outside of the substrate to be exposed. 如申請專利範圍第6項所述的曝光微影裝置，其中上述基準部經由上述貫通孔而露出在外部。 The exposure lithography apparatus according to claim 6, wherein the reference portion is exposed to the outside through the through hole. 如申請專利範圍第6項所述的曝光微影裝置，更包括：記憶機構，記憶相對應的各個上述形成部及上述基準部的位置關係；測量機構，對上述基準部的位置進行測量；以及導出機構，根據藉由上述測量機構測量的上述基準部的位置與記憶於上述記憶機構的上述位置關係而導出上述形成部的位置。 The exposure lithography apparatus according to claim 6, further comprising: a memory mechanism that memorizes a positional relationship between each of the forming portions and the reference portion corresponding to the memory; and a measuring mechanism that measures a position of the reference portion; The deriving means derives the position of the forming portion based on the positional relationship of the reference portion measured by the measuring means and the positional relationship stored in the memory means. 如申請專利範圍第8項所述的曝光微影裝置，其中上述基準部為多個位置識別用標記，上述記憶機構分別記憶上述多個位置識別用標記的每一者與上述形成部的位置關係， 上述測量機構與被微影電路圖案的位置處於已知的關係，並對上述多個位置識別用標記的每一者的位置進行測量，上述導出機構根據由上述測量機構測量的各個上述位置識別用標記的位置與記憶於上述記憶機構的上述位置關係導出上述形成部的位置。 The exposure lithography apparatus according to claim 8, wherein the reference portion is a plurality of position recognition marks, and the memory means respectively stores a positional relationship between each of the plurality of position recognition marks and the formation portion. , The measuring mechanism and the position of the lithographic circuit pattern are in a known relationship, and the position of each of the plurality of position identifying marks is measured, and the deriving mechanism is configured for each of the positions measured by the measuring means. The position of the mark and the positional relationship stored in the memory means derive the position of the forming portion. 如申請專利範圍第9項所述的曝光微影裝置，其中上述平台可沿規定方向來回移動，在各個露出部，將上述多個位置識別用標記的每一者以在相對於上述平台的來回移動方向交叉的方向上並列的方式而設置。 The exposure lithography apparatus according to claim 9, wherein the platform is movable back and forth in a predetermined direction, and each of the plurality of position recognition marks is used in each of the exposed portions to be back and forth with respect to the platform. The direction in which the moving directions intersect is juxtaposed. 如申請專利範圍第1項所述的曝光微影裝置，其中上述形成部設置為相對於上述平台在預定的範圍內可移動。 The exposure lithography apparatus according to claim 1, wherein the forming portion is disposed to be movable within a predetermined range with respect to the platform. 如申請專利範圍第1項所述的曝光微影裝置，其中在上述平台上設置著另一固定部，上述另一固定部自上述第1面或者上述第2面的方向固定上述被曝光基板。 The exposure lithography apparatus according to claim 1, wherein the platform is provided with another fixing portion, and the other fixing portion fixes the exposed substrate from the first surface or the second surface. 如申請專利範圍第12項所述的曝光微影裝置，其中上述另一固定部藉由自上述第1面或者上述第2面的方向吸附上述被曝光基板而固定於上述平台。 The exposure lithography apparatus according to claim 12, wherein the other fixing portion is fixed to the stage by adsorbing the exposed substrate from the first surface or the second surface. 一種曝光微影方法，是曝光微影裝置的曝光微影方法，包括：平台，載置被曝光基板；固定部，自預定的第1位置向第2位置移動，將載置於上述平台的上述被曝光基板的端部夾持並固定於上述固定部與上述平台之間；微影部，在藉由上述固定部而使端部固定的狀態下，對上述被曝光基板的第1面進行曝光，藉 此將預定的電路圖案微影於上述第1面上；形成部，與上述固定部的移動聯動地移動，在藉由上述固定部而使端部固定的狀態下，在上述被曝光基板的與上述第1面相對向的第2面形成預定的標記；以及作為上述形成部的位置的基準的基準部，與上述形成部的移動聯動地移動；上述曝光微影方法包括：記憶步驟，記憶相對應的各個上述形成部及上述基準部的位置關係；位置測量步驟，對上述基準部的位置進行測量；以及導出步驟，根據上述測量步驟中測量的基準部的位置與上述記憶步驟中記憶的上述位置關係而導出上述形成部的位置。 An exposure lithography method is an exposure lithography method of an exposure lithography apparatus, comprising: a platform on which an exposed substrate is placed; and a fixing portion that moves from a predetermined first position to a second position to mount the above-mentioned platform The end portion of the substrate to be exposed is sandwiched and fixed between the fixing portion and the stage; and the lithography portion exposes the first surface of the exposed substrate in a state where the end portion is fixed by the fixing portion ,borrow This lithographically patterns the predetermined circuit pattern on the first surface; the forming portion moves in conjunction with the movement of the fixing portion, and the end portion is fixed by the fixing portion, and the exposed substrate is a predetermined mark is formed on the second surface facing the first surface; and a reference portion serving as a reference for the position of the forming portion moves in conjunction with movement of the forming portion; the exposure lithography method includes: a memory step, a memory phase Corresponding positional relationship between each of the forming portion and the reference portion; a position measuring step of measuring a position of the reference portion; and a deriving step of, according to the position of the reference portion measured in the measuring step, and the above-described memory in the memory step The position of the above-described forming portion is derived from the positional relationship.
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