TWI570791B - Polishing apparatus and substrate holding apparatus - Google Patents

Polishing apparatus and substrate holding apparatus Download PDF

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TWI570791B
TWI570791B TW100135459A TW100135459A TWI570791B TW I570791 B TWI570791 B TW I570791B TW 100135459 A TW100135459 A TW 100135459A TW 100135459 A TW100135459 A TW 100135459A TW I570791 B TWI570791 B TW I570791B
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temperature
elastic film
substrate
film
substrate holding
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TW201314752A (en
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福島誠
渡邊和英
安田穗積
山木曉
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荏原製作所股份有限公司
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Description

研磨裝置及基板固持裝置 Grinding device and substrate holding device

本發明係有關一種研磨裝置及方法，尤指一種供研磨被拋光之物體(基板)，例如半導體晶圓，至平鏡面拋光之程度的研磨裝置及方法。The present invention relates to a polishing apparatus and method, and more particularly to a polishing apparatus and method for polishing a polished object (substrate), such as a semiconductor wafer, to a flat mirror finish.

近幾年來，半導體高積體化及高密度需求愈來愈小的佈線圖案(wiring patterns)或互相連線(interconnections)而且愈來愈多的互連層。在較小電路中之複數互相連線產生了較多的步驟，因而招致較低之互連層上有不規則表面。互連層數的增加使得薄膜塗層性能(階梯覆蓋(step coverage))愈差，而且薄膜愈被階梯覆蓋之構形變得愈差。因此，欲求得較佳之多層次互相連線，有必要具有經改善之階梯覆蓋及適當之表面平整。其次，由於微影光學系統(photolithographic optical system)之焦距深度(depth of focus；景深)在微影製程小型化中較小，半導體裝置之表面需要加以平整，以使得半導體裝置之表面上之不規則階梯能夠落入焦距深度之內。In recent years, semiconductors have become more integrated and have higher density requirements for wiring patterns or interconnects and more and more interconnect layers. The interconnection of a plurality of complex lines in a smaller circuit creates more steps, resulting in an irregular surface on the lower interconnect layer. The increase in the number of interconnect layers makes the film coating performance (step coverage) worse, and the more the film is covered by the step, the worse the configuration becomes. Therefore, in order to obtain a better level of interconnection, it is necessary to have improved step coverage and appropriate surface smoothing. Secondly, since the depth of focus of the photolithographic optical system is small in the miniaturization of the lithography process, the surface of the semiconductor device needs to be flattened so that the surface of the semiconductor device is irregular. The ladder can fall within the depth of focus.

是故，在半導體製程中，表面平整化對於半導體裝置愈顯重要。最為重要之平整化技術其中之一是化學機械研磨(chemical mechanical polishing(CMP))。因此，化學機械研磨機械一直被用來做半導體晶圓之表面平整化。在化學機械研磨機械中，當含有研磨顆粒(例如二氧化矽(SiO2))之研磨液被供應至研磨表面(例如研磨墊)上時，一基板(例如半導體晶圓)即被帶至與該研磨表面滑動接觸，而使得該基板被研磨。Therefore, in semiconductor manufacturing, surface planarization is becoming more and more important for semiconductor devices. One of the most important planarization techniques is chemical mechanical polishing (CMP). Therefore, chemical mechanical polishing machines have been used to planarize the surface of semiconductor wafers. In a chemical mechanical polishing machine, when a polishing liquid containing abrasive particles (for example, cerium oxide (SiO 2 )) is supplied onto an abrasive surface (for example, a polishing pad), a substrate (for example, a semiconductor wafer) is brought to and The abrasive surface is in sliding contact such that the substrate is ground.

此種類型之研磨裝置包括具有由一研磨墊所構成之研磨表面之研磨台(polishing table)、以及稱為頂環(top ring)或研磨頭(polishing head)之基板固持裝置，以固持一基板，例如半導體晶圓。當利用研磨裝置研磨半導體晶圓時，該半導體晶圓被該基板固持裝置固持並在一預定之壓力下壓迫於該研磨表面。此時，該研磨台與基板固持裝置係彼此相對運動而使半導體晶圓與研磨表面滑動接觸，俾使得該半導體晶圓表面被研磨至一平鏡面拋光之程度。A polishing apparatus of this type includes a polishing table having an abrasive surface composed of a polishing pad, and a substrate holding device called a top ring or a polishing head to hold a substrate. , for example, semiconductor wafers. When the semiconductor wafer is polished by the polishing apparatus, the semiconductor wafer is held by the substrate holding device and pressed against the polishing surface under a predetermined pressure. At this time, the polishing table and the substrate holding device move relative to each other to make the semiconductor wafer slidingly contact with the polishing surface, so that the surface of the semiconductor wafer is polished to a degree of flat mirror polishing.

在此等研磨裝置中，如果施加於被研磨之半導體晶圓與研磨墊研磨表面間之壓迫力並未均勻地施加於半導體晶圓之整個表面上，則半導體晶圓表面在不同區域上，將根據所施加之壓迫力而被不充分或過分地研磨。習慣上係利用一壓力室以均勻該施加於半導體晶圓之壓迫力，而該壓力室係由一位於該基板固持裝置下方之彈性膜所構成，並對該壓力室施加一例如壓縮空氣之流體，而經由該彈性膜在流體壓力下，壓迫該半導體晶圓扺住該研磨墊之研磨表面。In such a polishing apparatus, if the pressing force applied between the polished semiconductor wafer and the polishing surface of the polishing pad is not uniformly applied to the entire surface of the semiconductor wafer, the surface of the semiconductor wafer is on different regions, It is insufficiently or excessively ground depending on the applied pressing force. It is customary to utilize a pressure chamber to evenly apply the compressive force applied to the semiconductor wafer, and the pressure chamber is formed by an elastic membrane located below the substrate holding device, and a fluid such as compressed air is applied to the pressure chamber. And, under the fluid pressure, the semiconductor wafer is pressed against the polishing surface of the polishing pad via the elastic film.

在另一方面，形成於被研磨物之半導體晶圓表面之薄膜，由於薄膜形成之方法或裝置之特性，將依半導體晶圓徑向位置而具有不同厚度。特別是，該形成於半導體晶圓表面之薄膜在其徑向上具有一初始薄膜厚度分布。因此，如上所述，經該基板固持裝置以均勻地壓迫半導體晶圓之整個表面以研磨半導體晶圓，半導體晶圓之整個表面係經均勻地研磨，因而上述在半導體晶圓表面之初始薄膜厚度分布無法予以改正。是故，如日本發明專利早期公開2006-128582號案所揭露者，有一種研磨裝置其內設有複數個壓力室，其等係由一彈性膜形成於半導體晶圓之表面上，而供應至各壓力室之例如壓縮空氣之加壓流體之各壓力係經獨立地控制，以便在半導體晶圓上之各個區域控制供應至半導體晶圓之各壓力。是故，在一研磨機內用以壓迫半導體晶圓抵壓研磨表面之壓迫力，在較厚薄膜區域較之在較薄薄膜區域有較大之壓迫力，且在較厚薄膜區域之研磨率(polishing rate)係經選擇性地提高，俾無需依賴薄膜形成時之薄膜厚度分布即能夠平整地研磨整個半導體晶圓表面。On the other hand, the film formed on the surface of the semiconductor wafer of the object to be polished has different thickness depending on the radial position of the semiconductor wafer due to the characteristics of the method or device for forming the film. In particular, the film formed on the surface of the semiconductor wafer has an initial film thickness distribution in its radial direction. Therefore, as described above, the substrate holding device uniformly presses the entire surface of the semiconductor wafer to polish the semiconductor wafer, and the entire surface of the semiconductor wafer is uniformly polished, thereby forming the initial film thickness on the surface of the semiconductor wafer. The distribution cannot be corrected. For example, as disclosed in Japanese Laid-Open Patent Publication No. 2006-128582, there is a polishing apparatus having a plurality of pressure chambers therein which are formed of an elastic film on the surface of a semiconductor wafer and supplied to The pressures of the pressurized fluid, such as compressed air, in each pressure chamber are independently controlled to control the various pressures supplied to the semiconductor wafer in various regions on the semiconductor wafer. Therefore, the pressing force for pressing the semiconductor wafer against the grinding surface in a grinder has a greater pressing force in the thicker film region than in the thinner film region, and the polishing rate in the thicker film region. The polishing rate is selectively increased, and the entire semiconductor wafer surface can be polished uniformly without depending on the film thickness distribution when the film is formed.

當一基板(例如半導體晶圓)被依據有如上所述結構之研磨機研磨時，基板受到相當之研磨壓力而被壓迫抵壓於研磨墊之研磨表面，並與研磨表面作滑動接觸。其結果為，基板與研磨墊接觸表面之溫度(亦即研磨溫度)升高。如上所述，為了改善研磨性能之目的，控制研磨壓力是重要的。然而，為了改善研磨性能之目的，量測並控制研磨溫度亦非常重要。特別是，由於研磨墊含有例如發泡聚氨酯(foamed polyurethane)之樹脂材料，研磨溫度改變了研磨墊之剛性，而影響基板之平整化特性。此外，由於化學機械研磨(CMP)是一種利用研磨液(研磨漿(polishing slurry))與基板之被研磨表面間化學反應之研磨方法，研磨溫度會對研磨漿之化學特性造成影響。而且，研磨率分布隨著研磨溫度而改變以致降低良率(yield rate)或研磨率，因而降低研磨機之生產力。再者，如果在基板表面內有溫度分布，則在基板表面內之研磨性能將會變得不均勻。When a substrate (e.g., a semiconductor wafer) is ground by a grinder having the structure described above, the substrate is subjected to a relatively abrasive pressure and pressed against the abrasive surface of the polishing pad and brought into sliding contact with the abrasive surface. As a result, the temperature at which the substrate and the polishing pad contact surface (i.e., the polishing temperature) rise. As described above, it is important to control the grinding pressure for the purpose of improving the polishing performance. However, it is also important to measure and control the grinding temperature for the purpose of improving the grinding performance. In particular, since the polishing pad contains a resin material such as foamed polyurethane, the polishing temperature changes the rigidity of the polishing pad and affects the planarization characteristics of the substrate. In addition, since chemical mechanical polishing (CMP) is a polishing method that utilizes a chemical reaction between a polishing liquid (polishing slurry) and a surface to be polished of a substrate, the polishing temperature affects the chemical properties of the slurry. Moreover, the polishing rate distribution changes with the polishing temperature so as to lower the yield rate or the polishing rate, thereby reducing the productivity of the mill. Furthermore, if there is a temperature distribution in the surface of the substrate, the polishing performance in the surface of the substrate will become uneven.

職是，如日本發明專利公開2002-301660號以及2005-268566號案所揭露者，在研磨之過程中係量測基板(例如半導體晶圓)之溫度。再者，如日本發明專利早期公開2006-332520號案所揭露者，量測用以固持半導體晶圓之薄膜之溫度以作為在研磨過程中量測鄰近經研磨之半導體晶圓表面之一部分之溫度之手段。For example, Japanese Patent Publication No. 2002-301660 and No. 2005-268566 disclose the temperature of a substrate (e.g., a semiconductor wafer) during the grinding process. Further, as disclosed in Japanese Laid-Open Patent Publication No. 2006-332520, the temperature of the film for holding the semiconductor wafer is measured as a temperature for measuring a portion of the surface of the adjacent semiconductor wafer during the grinding process. Means.

如上所述，在日本發明專利公開2002-301660、2005-268566以及2006-332520號案中，係在研磨過程中量測基板(例如半導體晶圓)之溫度或者是供固持半導體晶圓之薄膜之溫度。此外，日本發明專利公開2002-301660號案揭露，為了高精確度量測基板之溫度，基板表面之溫度之量測係藉著檢測來自基板之反向側面之兩個或更多之紅外線波長。然而，在日本發明專利早期公開2002-301660號案所揭示之技術中，因為不能使用形成壓力室之薄膜作為壓迫基板之方法，而不能夠獲致研磨率之均勻分布。此外，由於被研磨之基板表面之溫度量測係藉著量測穿過基板之紅外線而獲致，紅外線之傳輸條件隨著基板上之薄膜類型而不同，或者是如果有水滴附著於基板之相反表面上或基板之相反表面係潮濕的，則相當數量之紅外線將會改變，因而產生不同之量測結果。As described above, in the Japanese Patent Publication Nos. 2002-301660, 2005-268566, and 2006-332520, the temperature of a substrate (for example, a semiconductor wafer) or a film for holding a semiconductor wafer is measured during the grinding process. temperature. Further, Japanese Patent Laid-Open Publication No. 2002-301660 discloses that, in order to measure the temperature of the substrate with high accuracy, the temperature of the substrate surface is measured by detecting two or more infrared wavelengths from the opposite side of the substrate. However, in the technique disclosed in Japanese Laid-Open Patent Publication No. 2002-301660, since the film forming the pressure chamber cannot be used as a method of pressing the substrate, uniform distribution of the polishing rate cannot be obtained. In addition, since the temperature measurement of the surface of the substrate to be polished is obtained by measuring the infrared rays passing through the substrate, the transmission condition of the infrared rays varies depending on the type of the film on the substrate, or if water droplets adhere to the opposite surface of the substrate. If the opposite surface of the upper or substrate is wet, a significant amount of infrared light will change, resulting in different measurements.

再者，日本發明專利公開2005-268566揭露使用一種開放式氣袋，該開放式氣袋中有開放的基板固持表面供量測基板之溫度。此種開放式氣袋，在研磨過程中加壓流體會漏，水或研磨液會進入氣袋之開放部分而阻礙溫度之精確量測。而且，如該日本發明專利公開2005-268566所揭露，當以一般泛用之紅外線輻射式溫度計量測基板之溫度時，因為紅外線會通過矽晶圓，紅外線輻射式溫度計僅能量測具有金屬膜之晶圓而不適於量測其他物件之溫度，而且，縱令使用了關閉式氣袋，並且由允許電磁射線通過之材料製造之氣袋，仍因即使是由薄膜構成之氣袋會有某程度之對電磁射線傳輸之阻礙而不能以高精確度量測基板之溫度。Further, Japanese Laid-Open Patent Publication No. 2005-268566 discloses the use of an open air bag having an open substrate holding surface for measuring the temperature of the substrate. In such an open air bag, the pressurized fluid leaks during the grinding process, and the water or the slurry enters the open portion of the air bag to hinder the accurate measurement of the temperature. Further, as disclosed in Japanese Laid-Open Patent Publication No. 2005-268566, when the temperature of the substrate is measured by a general-purpose infrared radiation type temperature, since the infrared rays pass through the tantalum wafer, the infrared radiation type thermometer only has a metal film. Wafers are not suitable for measuring the temperature of other objects, and, even if a closed air bag is used, and the air bag made of a material that allows electromagnetic rays to pass through, there is still a certain degree of airbag even if it is composed of a film. The hindrance to electromagnetic radiation transmission cannot measure the temperature of the substrate with high accuracy.

此外，日本發明專利公開2006-332520號案揭露一種量測用以固持半導體晶圓之薄膜溫度以作為量測鄰近半導體晶圓被研磨表面之溫度手段之技術。不過，在揭露於日本發明專利公開2006-332520號案之技術中，由於溫度感測器係附裝於薄膜上，當薄膜因損耗而被更換時，即需同時更換該溫度感測器。是故，此種技術需要非常昂貴之結構，而且該溫度感測器之佈線工作(wiring work)，或者是類似於薄膜每次被更換之情形，因而降低了生產量。In addition, Japanese Laid-Open Patent Publication No. 2006-332520 discloses a technique for measuring a film temperature for holding a semiconductor wafer as a means for measuring a temperature of a surface to be polished adjacent to a semiconductor wafer. However, in the technique disclosed in Japanese Laid-Open Patent Publication No. 2006-332520, since the temperature sensor is attached to the film, when the film is replaced due to loss, the temperature sensor needs to be replaced at the same time. Therefore, this technique requires a very expensive structure, and the wiring work of the temperature sensor is similar to the case where the film is replaced each time, thereby reducing the throughput.

本發明之發明人已經密集地研讀了揭露於日本發明專利公開2006-128582、2002-301660、2005-268566、2006-332520號案以及類似之技術。結果，發現雖然在研磨過程中量測基板(例如半導體晶圓)較為合意，但如果無法使用用以形成壓力室之薄膜，則會產生一嚴重之問題而無法維持研磨裝置之研磨性能。因此，經發現最佳者為，以使用形成壓力室之薄膜為前提，藉著量測一鄰近基板之元件(例如薄膜)之溫度，以估算在研磨過程中之基板之溫度。The inventors of the present invention have intensively studied the techniques disclosed in Japanese Laid-Open Patent Publication No. 2006-128582, No. 2002-301660, No. 2005-268566, No. 2006-332520, and the like. As a result, it has been found that although it is desirable to measure a substrate (e.g., a semiconductor wafer) during the polishing process, if a film for forming a pressure chamber cannot be used, a serious problem can be caused and the polishing performance of the polishing apparatus cannot be maintained. Therefore, it has been found that the optimum is to estimate the temperature of the substrate during the grinding process by measuring the temperature of an element (e.g., a film) adjacent to the substrate on the premise of using the film forming the pressure chamber.

職是，本發明之各發明人嘗試藉著以非接觸式紅外線輻射溫度計(infrared radiation thermometer)，在研磨過程中自形成壓力室之薄膜溫度估算基板之溫度之方法，然後以數種型式之薄膜安裝在基板固持裝置(頂環)，重複進行一面將各薄膜所固持之各基板加熱及冷卻一面實驗利用紅外線輻射溫度計以及熱電偶(thermocouple)量測各薄膜之溫度，而檢查兩項量測之關係。其結果為，經發現利用紅外線輻射溫度計量測薄膜溫度之量測值以及利用熱電偶量測薄膜溫度之量測值，在某種型式之薄膜大致恰好彼此一致，而在其它種型式之薄膜則彼此有差異(如後述)。The inventors of the present invention attempted to estimate the temperature of the substrate from the temperature of the film forming the pressure chamber during the grinding process by using a non-contact infrared radiation thermometer, and then using several types of films. Mounted on the substrate holding device (top ring), repeating the heating and cooling of each substrate held by each film. Experiment with an infrared radiation thermometer and a thermocouple to measure the temperature of each film, and check the two measurements. relationship. As a result, it has been found that the measurement of the temperature of the film by the infrared radiation temperature and the measurement of the temperature of the film by the thermocouple are used, and the films of a certain type are substantially coincident with each other, while the films of other types are similar. There are differences between each other (as described later).

本發明之各發明人經分析上述差異之原因，發現由於薄膜之上表面反射紅外線，量測值受到薄膜周圍之各組件之溫度影響，因而薄膜之溫度無法藉著紅外線輻射溫度計而精確量出。薄膜係藉著模具在成形製程中所製作者。由於模具表面通常係鏡面拋光，薄膜表面亦成為具有小表面粗糙度之鏡面情況。呈現鏡面狀態之薄膜上表面具有高紅外線反射係數。是故，設若在薄膜上方位置量取紅外線輻射溫度時，量測值會受到薄膜周圍部份之紅外線照射強烈地影響，因而薄膜溫度無法高精確度地量測。The inventors of the present invention analyzed the above-mentioned differences and found that since the surface of the film reflects infrared rays, the measured value is affected by the temperature of each component around the film, and thus the temperature of the film cannot be accurately measured by the infrared radiation thermometer. The film is produced by a mold in a forming process. Since the surface of the mold is usually mirror polished, the surface of the film also becomes a mirror surface with a small surface roughness. The upper surface of the film in a mirror state has a high infrared reflection coefficient. Therefore, if the infrared radiation temperature is measured at a position above the film, the measurement value is strongly affected by the infrared irradiation of the portion around the film, and thus the film temperature cannot be measured with high precision.

再者，本發明之各發明人經發現，設若薄膜溫度是由非接觸式紅外線輻射溫度計所量出，薄膜之溫度由於在薄膜上結露之原因，使得薄膜溫度無法高精確度地量測。Furthermore, the inventors of the present invention have found that if the film temperature is measured by a non-contact infrared radiation thermometer, the temperature of the film cannot be measured with high precision due to condensation on the film.

本發明之各發明人經各種實驗，並分析實驗之結果，以便發現在薄膜上結露之原因，而獲致如下之知識：當基板被壓迫抵住研磨墊而被研磨時，製程中之熱度將薄膜以及壓力室中之氣體加熱，因而導致溫度增加。在研磨基板後，基板自基板固持表面移除，然後基板固持表面在清洗製程中被清洗液清洗，俾冷卻該薄膜及在壓力室中之氣體。因此，該薄膜及在壓力室中之氣體即重複著溫度升高及溫度下降。在另一方面，供應氣體進入壓力室之流體通道通常連結著壓力控制器、壓力釋放閥，真空源、以及類似構件。就加壓流體而言，通常係使用將水分移除之惰性氣體(例如氮氣(N2))或乾空氣，因此即不再出現結露之情形。不過，當基板在真空狀態下被基板固持裝置固定時，壓力室即成為真空以將基板在真空狀態下固定。因此，當開始研磨基板或基板自基板固持裝置被移除時，該真空狀態即因曝露於壓力室之大氣壓力而解除。當連通壓力室之流體通道自真空狀態轉換至壓力室解放成大氣壓力狀態時，在設有研磨機之大氣中的空氣即進入流體通道中。因此，含有水分之空氣經此壓力釋放操作而進入壓力室內，而壓力室中之空氣重複著溫度升高與溫度降低，因而在薄膜上產生了結露現象。當水滴由於薄膜結露而附著於薄膜之上方表面時，相較於沒有水滴的情形，具有水滴之部分照射量之紅外線，因而以紅外線溫度計無法高精確度地量測出薄膜之溫度。此外，當結露現象所引起的水滴量增加時，水即累積於壓力室而改變了供給基板之壓力，導致無法達成穩定之研磨。The inventors of the present invention conducted various experiments and analyzed the results of the experiments in order to find out the cause of condensation on the film, and obtained the following knowledge: when the substrate is pressed against the polishing pad to be ground, the heat in the process will be a film. And the heating of the gas in the pressure chamber, thus causing an increase in temperature. After the substrate is polished, the substrate is removed from the substrate holding surface, and then the substrate holding surface is cleaned by the cleaning liquid during the cleaning process, and the film and the gas in the pressure chamber are cooled. Therefore, the film and the gas in the pressure chamber repeat the temperature rise and the temperature drop. In another aspect, the fluid passage into which the supply gas enters the pressure chamber is typically coupled to a pressure controller, a pressure relief valve, a vacuum source, and the like. In the case of a pressurized fluid, an inert gas (for example, nitrogen (N 2 )) or dry air which removes moisture is usually used, so that condensation does not occur any more. However, when the substrate is fixed by the substrate holding device in a vacuum state, the pressure chamber becomes a vacuum to fix the substrate in a vacuum state. Therefore, when the substrate is started to be polished or the substrate is removed from the substrate holding device, the vacuum state is released by the atmospheric pressure exposed to the pressure chamber. When the fluid passage connecting the pressure chambers is switched from the vacuum state to the pressure chamber to the atmospheric pressure state, the air in the atmosphere in which the grinder is placed enters the fluid passage. Therefore, the air containing moisture enters the pressure chamber through the pressure release operation, and the air in the pressure chamber repeats the temperature rise and the temperature decrease, thereby causing condensation on the film. When the water droplets adhere to the upper surface of the film due to the condensation of the film, the infrared rays are partially irradiated with the amount of infrared rays of the water droplets, so that the temperature of the film cannot be measured with high accuracy by the infrared thermometer. Further, when the amount of water droplets caused by the condensation phenomenon increases, water accumulates in the pressure chamber and changes the pressure supplied to the substrate, resulting in failure to achieve stable polishing.

本發明係針對上述之情形而作出，因此本發明之一目的係提供一種具有薄膜之基板固持裝置，俾形成可以控制例如半導體晶圓之基板之溫度之壓力室，其控制溫度方式係估算研磨期間該基板之溫度。The present invention has been made in view of the above circumstances, and it is therefore an object of the present invention to provide a substrate holding device having a film which forms a pressure chamber which can control the temperature of a substrate such as a semiconductor wafer, and the temperature control method is used to estimate the polishing period. The temperature of the substrate.

再者，本發明之另一態樣係提供一種具有該種基板固持裝置之研磨裝置。Furthermore, another aspect of the present invention provides a polishing apparatus having such a substrate holding device.

為了達成上述目的，本發明之第一態樣，係提供一種用以研磨基板之研磨裝置，其包含：具有研磨表面之研磨台、基板固持裝置其係經構形為可將基板固定並將基板壓抵該研磨表面、以及控制器。該基板固持裝置包括一彈性薄膜其係經構形以便形成一基板固持表面與該基板接觸、一載具係設置於該彈性薄膜上方、至少一壓力室其係形成於該彈性薄膜與該載具之間、以及一紅外線偵測器其係經構形以量測來自該彈性薄膜之熱能；其中該控制器係利用紅外線偵測器之量測值以計算該彈性薄膜之溫度估算值。In order to achieve the above object, a first aspect of the present invention provides a polishing apparatus for polishing a substrate, comprising: a polishing table having an abrasive surface, and a substrate holding device configured to fix the substrate and the substrate Press against the abrasive surface and the controller. The substrate holding device includes an elastic film configured to form a substrate holding surface in contact with the substrate, a carrier disposed above the elastic film, and at least one pressure chamber formed on the elastic film and the carrier And an infrared detector is configured to measure thermal energy from the elastic film; wherein the controller uses the measured value of the infrared detector to calculate a temperature estimate of the elastic film.

根據本發明，一面將例如半導體晶圓之基板以彈性薄膜固持，並將該基板壓抵研磨表面以研磨該基板，一面以紅外線偵測器量測發射自該彈性薄膜之熱能，然後該控制器利用紅外線偵測器之量測值以計算該彈性薄膜之溫度估算值。在此情形下，該紅外線偵測器之量測值以及該彈性薄膜之溫度兩者間之關聯性(correlation)經由實驗以事先求取，然後利用該關聯性以計算該彈性薄膜溫度之估算值。由於該彈形薄膜構成基板固持表面以固持該基板，彈性薄膜是最受基板溫度影響之元件，也因此可藉由估算該彈性薄膜之溫度，而間接地估算該基板之溫度。According to the present invention, a substrate such as a semiconductor wafer is held by an elastic film, and the substrate is pressed against the polishing surface to polish the substrate, and the thermal energy emitted from the elastic film is measured by an infrared detector, and then the controller The measured value of the infrared detector is used to calculate the temperature estimate of the elastic film. In this case, the correlation between the measured value of the infrared detector and the temperature of the elastic film is determined in advance by experiments, and then the correlation is used to calculate the estimated value of the elastic film temperature. . Since the elastic film constitutes the substrate holding surface to hold the substrate, the elastic film is the component most affected by the substrate temperature, and thus the temperature of the substrate can be indirectly estimated by estimating the temperature of the elastic film.

在本發明之一較佳態樣中，該控制器利用該彈性薄膜之溫度估算值以計算該基板之溫度估算值。In a preferred aspect of the invention, the controller utilizes a temperature estimate of the elastic film to calculate a temperature estimate for the substrate.

根據本發明，基板之溫度估算值係從彈性薄膜之溫度估算值，而藉由該控制器計算得出。在此情形下，該彈性薄膜之溫度以及該基板之溫度兩者間之關聯性經由實驗以事先求取，然後利用該關聯性以計算該基板溫度之估算值。According to the invention, the temperature estimate of the substrate is derived from the temperature estimate of the elastic film and is calculated by the controller. In this case, the correlation between the temperature of the elastic film and the temperature of the substrate is determined in advance by experiments, and then the correlation is utilized to calculate an estimate of the substrate temperature.

在本發明之一較佳態樣中，利用該彈性薄膜之溫度估算值以改變研磨條件。In a preferred aspect of the invention, the temperature estimate of the elastic film is utilized to vary the milling conditions.

根據本發明，在研磨期間，若該彈性薄膜之溫度估算值或該基板之溫度估算值高時，藉著降低壓力室之壓力，而使研磨壓力降低，以便抑制該基板或該彈性薄膜之溫度上升。此外，可利用設置於基板固持裝置外可供冷卻及加熱研磨表面之裝置，以執行整個研磨表面之溫度控制，或執行該研磨表面對應於該受量測壓力室之部分之溫度控制。作為調整研磨表面溫度之裝置，有將一媒介物(medium)與研磨表面接觸以調整研磨表面溫度之裝置者、將一流體吹至研磨表面上之裝置者、以及類似之裝置者。According to the present invention, during the grinding, if the temperature estimation value of the elastic film or the temperature estimation value of the substrate is high, the polishing pressure is lowered by lowering the pressure of the pressure chamber to suppress the temperature of the substrate or the elastic film. rise. In addition, means for cooling and heating the abrasive surface disposed outside the substrate holding device may be utilized to perform temperature control of the entire abrasive surface or to perform temperature control of the portion of the abrasive surface corresponding to the pressure chamber being measured. As means for adjusting the temperature of the polishing surface, there are a device for bringing a medium into contact with the polishing surface to adjust the temperature of the polishing surface, a device for blowing a fluid onto the polishing surface, and the like.

在本發明之一較佳態樣中，該彈性薄膜之溫度可藉著量測從被量測物之彈性薄膜所發射熱能之紅外線量而測得。In a preferred aspect of the invention, the temperature of the elastic film can be measured by measuring the amount of infrared energy emitted from the thermal energy of the elastic film of the object to be measured.

為了達成上述目的，根據本發明之第二態樣，係提供將基板固定並壓抵於研磨表面之基板固持裝置，其包含：一彈性薄膜係經構形以便形成一基板固持表面而與該基板接觸、一載具係設置於該彈性薄膜上方、至少一個壓力室其係形成於該彈性薄膜與該載具之間、以及一紅外線偵測器其係經構形以便量測來自該彈性薄膜之熱能，其中於該彈性薄膜之基板固持表面之背面側者施行表面粗糙加工。In order to achieve the above object, according to a second aspect of the present invention, there is provided a substrate holding device for fixing and pressing a substrate against a polishing surface, comprising: an elastic film configured to form a substrate holding surface and the substrate a contact, a carrier is disposed above the elastic film, at least one pressure chamber is formed between the elastic film and the carrier, and an infrared detector is configured to measure the elastic film. Thermal energy in which surface roughening is performed on the back side of the substrate holding surface of the elastic film.

根據本發明，一面將例如半導體晶圓之基板以彈性薄膜固持，並將其壓抵於研磨表面以研磨該基板，一面以紅外線偵測器量測發射自該彈性薄膜之熱能。由於在該彈性薄膜之基板固持表面之背面側施行表面粗糙加工，射在該彈性薄膜之基板固持表面之背面側之紅外線反射係數(reflectance)即降低，因而紅外線偵測器可以高準確度量測發射自彈性薄膜之熱能，是故，彈性薄膜之之溫度可被高準確度地量測。According to the present invention, a substrate such as a semiconductor wafer is held by an elastic film and pressed against the polishing surface to polish the substrate, and the thermal energy emitted from the elastic film is measured by an infrared detector. Since the surface roughening process is performed on the back side of the substrate holding surface of the elastic film, the infrared reflectance of the back surface of the substrate holding surface of the elastic film is lowered, so that the infrared detector can be highly accurately measured. The thermal energy emitted from the elastic film is such that the temperature of the elastic film can be measured with high accuracy.

為了達成上述目的，本發明之第三態樣，係提供一基板固持裝置，包括一彈性薄膜其係經構形以形成一基板固持表面而與該基板接觸、一載具係設置於該彈性薄膜上方、至少一個壓力室其係形成於該彈性薄膜與該載具之間、一紅外線偵測器其係經構形以便量測來自該彈性薄膜之熱能、以及一量測儀器(measuring instrument)其係設置於該彈性薄膜之基板固持表面之背面側且其經構形以量測除了彈性薄膜部分之熱能。In order to achieve the above object, a third aspect of the present invention provides a substrate holding device including an elastic film configured to form a substrate holding surface to be in contact with the substrate, and a carrier disposed on the elastic film. Above, at least one pressure chamber is formed between the elastic film and the carrier, an infrared detector is configured to measure thermal energy from the elastic film, and a measuring instrument It is disposed on the back side of the substrate holding surface of the elastic film and is configured to measure the thermal energy except the elastic film portion.

根據本發明，一面將例如半導體晶圓之基板以彈性薄膜固持，並將其壓抵於研磨表面以研磨該基板，一面以紅外線偵測器量測發射自該彈性薄膜之熱能，且除了彈性薄膜部分以外之位於該彈性薄膜之背面側之熱能由量測儀器所量測。然後，該彈性薄膜溫度估算值或該基板溫度估算值，利用由紅外線偵測器所量測之彈性薄膜熱能量測值，以及使用該量測儀器所量測除了彈性薄膜部分以外之熱能量測值，而予以計算。若發射自除了該彈性薄膜部分以外之位於該彈性薄膜之背面側之紅外線被該彈性薄膜反射而對該紅外線偵測器產生很大之影響，則彈性薄膜之溫度或基板之溫度無法以紅外線偵測器量測值以高準確度地估算。因此，該彈性薄膜溫度估算值或該基板溫度估算值，係利用該紅外線偵測器量測值以及以該量測儀器所量測除了彈性薄膜部分以外之量測值，而予以計算者。According to the present invention, a substrate such as a semiconductor wafer is held by an elastic film and pressed against the polishing surface to polish the substrate, and the thermal energy emitted from the elastic film is measured by an infrared detector, and the elastic film is removed. The thermal energy outside the portion on the back side of the elastic film was measured by a measuring instrument. Then, the elastic film temperature estimation value or the substrate temperature estimation value is measured by the thermal energy measurement of the elastic film measured by the infrared detector, and the thermal energy measurement other than the elastic film portion is measured using the measuring instrument. The value is calculated. If the infrared rays emitted from the back side of the elastic film other than the elastic film portion are reflected by the elastic film and have a great influence on the infrared detector, the temperature of the elastic film or the temperature of the substrate cannot be detected by infrared rays. The measured values of the detector are estimated with high accuracy. Therefore, the elastic film temperature estimation value or the substrate temperature estimation value is calculated by using the infrared detector measurement value and the measurement value other than the elastic film portion measured by the measuring instrument.

在本發明之一較佳態樣中，該量測儀器量測該載具之熱能。In a preferred aspect of the invention, the measuring instrument measures the thermal energy of the carrier.

根據本發明，藉由量測與該彈性薄膜共同形成該壓力室載具之熱能，即可測出載具之溫度。若發射自載具之紅外線被該彈性薄膜反射而對該紅外線偵測器產生很大之影響時，則彈性薄膜之溫度或基板之溫度無法以紅外線偵測器之量測值以高準確度地估算。因此，該彈性薄膜溫度估算值或該基板溫度估算值，係利用該紅外線偵測器之量測值以及以該量測儀器所量測之載具溫度量測值，而予以計算者。According to the present invention, the temperature of the carrier can be measured by measuring the thermal energy of the pressure chamber carrier together with the elastic film. If the infrared rays emitted from the carrier are reflected by the elastic film and have a great influence on the infrared detector, the temperature of the elastic film or the temperature of the substrate cannot be measured by the value of the infrared detector with high accuracy. Estimate. Therefore, the elastic film temperature estimation value or the substrate temperature estimation value is calculated by using the measured value of the infrared detector and the measured value of the vehicle temperature measured by the measuring instrument.

在本發明之一較佳態樣中，基板固持裝置進一步包含一個壓力感測器其經構形以量測該壓力室之壓力。In a preferred aspect of the invention, the substrate holding device further includes a pressure sensor configured to measure the pressure of the pressure chamber.

根據本發明，壓力室內之壓力可藉由一壓力感測器量測壓力室之壓力，而控制於所需要之壓力值。例如，第一壓力控制器與第二壓力控制器經耦接到(coupled to)壓力室，而該兩個壓力控制器在研磨開始時設定於同一壓力。當研磨期間基板溫度估算值超過預定溫度時，該第二壓力控制器之設定壓力即被降低，而該第一壓力控制器之設定壓力則保持於同一壓力。因此，加壓流體自與該第一壓力控制器連通之流體通道，朝向與該第二壓力控制器連通之流體通道流動，而此加壓流體之流動即冷卻了壓力室內部。此時，該壓力室內之壓力係受到壓力感測器所監控，而當壓力室內之壓力大大地降低而低過控制壓力時，該第二壓力控制器之設定壓力即被增大，而在該壓力室中形成所需要之壓力。According to the present invention, the pressure in the pressure chamber can be controlled by the pressure of the pressure chamber by a pressure sensor to control the desired pressure value. For example, the first pressure controller and the second pressure controller are coupled to the pressure chamber, and the two pressure controllers are set to the same pressure at the beginning of the grinding. When the substrate temperature estimate exceeds a predetermined temperature during grinding, the set pressure of the second pressure controller is lowered, and the set pressure of the first pressure controller is maintained at the same pressure. Thus, the pressurized fluid flows from the fluid passage in communication with the first pressure controller toward the fluid passage in communication with the second pressure controller, and the flow of the pressurized fluid cools the interior of the pressure chamber. At this time, the pressure in the pressure chamber is monitored by the pressure sensor, and when the pressure in the pressure chamber is greatly lowered and the control pressure is lower than the control pressure, the set pressure of the second pressure controller is increased, and The required pressure is created in the pressure chamber.

在本發明之一較佳態樣中，基板固持裝置進一步包含一個控制器其經構形以利用紅外線偵測器量測值以及量測儀器量測值，以計算該彈性薄膜溫度之估算值。In a preferred aspect of the invention, the substrate holding device further includes a controller configured to utilize the infrared detector measurement and the measurement instrument to calculate an estimate of the temperature of the elastic film.

根據本發明，該彈性薄膜溫度估算值係利用由紅外線偵測器所量測之彈性薄膜熱能量測值，以及使用該量測儀器所量測除了彈性薄膜以外之部分之熱能量測值，而予以計算者。According to the present invention, the elastic film temperature estimation value is measured by the thermal energy measurement of the elastic film measured by the infrared detector, and the thermal energy measurement of the portion other than the elastic film is measured using the measuring instrument. Calculated by the person.

在本發明之一較佳態樣中，預先準備複數組之該彈性薄膜溫度量測值、該紅外線偵測器量測值(T1)、以及該量測儀器量測值(T2)，在一由(彈性薄膜溫度估算值)=b0+b1×T1+b2×T2所代表之多元線性回歸方程式，以計算極小化(彈性薄膜溫度量測值-彈性薄膜溫度估算值)2之回歸係數(regression coefficients)b0、b1及b2；並利用下列方程式：(彈性薄膜溫度估算值)=b0+b1×(彈性薄膜溫度量測值)+b2×(量測儀器量測值)，以計算彈性薄膜溫度估算值。In a preferred aspect of the present invention, the elastic film temperature measurement value, the infrared detector measurement value (T 1 ), and the measurement instrument measurement value (T 2 ) of the complex array are prepared in advance, In a multivariate linear regression equation represented by (elastic film temperature estimate) = b 0 + b 1 × T 1 + b 2 × T 2 to calculate the minimization (elastic film temperature measurement - elastic film temperature estimate 2 ) Regression coefficients b 0 , b 1 and b 2 ; and use the following equation: (elastic film temperature estimate) = b 0 + b 1 × (elastic film temperature measurement) + b 2 × ( The measuring instrument is measured to calculate the elastic film temperature estimate.

在本發明之一較佳態樣中，該控制器利用彈性薄膜溫度估算值以及量測儀器量測值，以計算基板溫度估算值。In a preferred aspect of the invention, the controller utilizes an elastic film temperature estimate and a measurement instrument measurement to calculate a substrate temperature estimate.

依據本發明，該基板溫度估算值係利用由紅外線偵測器所量測之彈性薄膜熱能量測值，以及使用該量測儀器所量測之除了彈性薄膜以外之部分之熱能量測值，而予以計算者。According to the present invention, the substrate temperature estimation value is measured by the thermal energy measurement of the elastic film measured by the infrared detector, and the thermal energy measurement of the portion other than the elastic film measured by the measuring instrument. Calculated by the person.

在一本發明之較佳態樣中，預先準備複數組該基板溫度量測值、該彈性薄膜溫度估算值(T1)、以及該量測儀器量測值(T2)，在一由(基板溫度估算值)=b0+b1×T1+b2×T2所代表之多元線性回歸方程式，以計算極小化(基板溫度量測值-基板溫度估算值)2之回歸係數b0、b1及b2；並利用下列方程式：(基板溫度估算值)=b0+b1×(彈性薄膜溫度估算值)+b2×(量測儀器量測值)，以計算基板溫度估算值。In a preferred aspect of the invention, the substrate temperature measurement value, the elastic film temperature estimation value (T 1 ), and the measurement instrument measurement value (T 2 ) are prepared in advance, in one ( Substrate temperature estimation value = b 0 + b 1 × T 1 + b 2 × T 2 represents the multiple linear regression equation to calculate the minimization (substrate temperature measurement - substrate temperature estimation) 2 regression coefficient b 0 , b 1 and b 2 ; and use the following equation: (substrate temperature estimate) = b 0 + b 1 × (elastic film temperature estimate) + b 2 × (measurement instrument measured value) to calculate the substrate temperature estimate value.

在本發明之一較佳態樣中，在該彈性薄膜與該載具之間至少形成兩個壓力室，且該紅外線偵測器係設置於該至少兩個壓力室其中之至少一個壓力室中。In a preferred aspect of the present invention, at least two pressure chambers are formed between the elastic film and the carrier, and the infrared detector is disposed in at least one of the at least two pressure chambers. .

根據本發明，在具有複數個壓力室之基板固持裝置中，紅外線偵測器係設於一壓力室內，且從該紅外線偵測器之量測結果，每一壓力室之壓力可予以變更，或研磨條件例如研磨表面溫度調整裝置之操作可加以變更。再者，兩個紅外線偵測器係分別設於該兩個壓力室中，且從該兩個紅外線偵測器之量測結果，該彈形薄膜溫度或該基板溫度可藉由線性插值(linear interpolation)予以估算。此外，各紅外線偵測器係對應於所有壓力室而設置，且從各個紅外線偵測器之量測結果，可估算出在相對應於各個壓力室位置之彈性薄膜溫度或基板溫度。According to the present invention, in a substrate holding device having a plurality of pressure chambers, the infrared detector is disposed in a pressure chamber, and the pressure of each pressure chamber can be changed from the measurement result of the infrared detector, or The polishing conditions such as the operation of the polishing surface temperature adjusting device can be changed. Furthermore, two infrared detectors are respectively disposed in the two pressure chambers, and from the measurement results of the two infrared detectors, the temperature of the elastic film or the substrate temperature can be linearly interpolated (linear Interpolation) to estimate. In addition, each of the infrared detectors is disposed corresponding to all of the pressure chambers, and from the measurement results of the respective infrared detectors, the elastic film temperature or the substrate temperature corresponding to the positions of the respective pressure chambers can be estimated.

在本發明之一較佳態樣中，形成其內設有紅外線偵測器之壓力室之該彈性薄膜基板固持表面並未設有開口。In a preferred aspect of the invention, the elastic film substrate holding surface on which the pressure chamber having the infrared detector is formed is not provided with an opening.

根據本發明，由於形成其內設有紅外線偵測器之壓力室之該彈性薄膜基板固持表面並未設有開口，當該基板固持表面受清洗時，可避免清潔液進入其內設有紅外線偵測器之壓力室。因此，可避免水滴留在該彈性薄膜之背面側，也因此可確保紅外線偵測器之準確度。According to the present invention, since the elastic film substrate holding surface of the pressure chamber in which the infrared detector is disposed is not provided with an opening, when the substrate holding surface is cleaned, the cleaning liquid can be prevented from entering the infrared detecting device. The pressure chamber of the detector. Therefore, it is possible to prevent the water droplets from remaining on the back side of the elastic film, and thus the accuracy of the infrared detector can be ensured.

在本發明之一較佳態樣中，該紅外線偵測器包含一紅外線溫度計。In a preferred aspect of the invention, the infrared detector comprises an infrared thermometer.

根據本發明，該彈性薄膜之溫度可藉由量測從被量測物之彈性薄膜所發射之熱能之紅外線量而測得。According to the present invention, the temperature of the elastic film can be measured by measuring the amount of infrared energy of the thermal energy emitted from the elastic film of the object to be measured.

為了達成上述目的，根據本發明之第四態樣，係提供一研磨裝置其包含：具有研磨表面之研磨台、以及根據申請專利範圍第5項至第15項之基板固持裝置。In order to achieve the above object, according to a fourth aspect of the present invention, there is provided a polishing apparatus comprising: a polishing table having an abrasive surface; and a substrate holding device according to items 5 to 15 of the patent application.

為了達成上述目的，根據本發明之第五態樣，係提供用以研磨基板之研磨裝置，其包含：具有研磨表面之研磨台、基板固持裝置其係經構形為將基板固持並將該基板壓抵於該研磨表面。該基板固持裝置包含一彈性薄膜其係經構形以形成一基板固持表面而與該基板接觸、一載具係設置於該彈性薄膜上方、至少一壓力室其係形成於該彈性薄膜與該載具之間、以及與該壓力室連通之第一通道，該第一通道僅連接至與該研磨裝置放置處之大氣隔離之氣體源。In order to achieve the above object, according to a fifth aspect of the present invention, there is provided a polishing apparatus for polishing a substrate, comprising: a polishing table having an abrasive surface, the substrate holding device configured to hold the substrate and the substrate Pressed against the abrasive surface. The substrate holding device comprises an elastic film configured to form a substrate holding surface to be in contact with the substrate, a carrier disposed above the elastic film, and at least one pressure chamber formed on the elastic film and the carrier A first passageway between and with the pressure chamber, the first passage being connected only to a source of gas that is isolated from the atmosphere at which the grinding device is placed.

根據本發明，當壓力室之壓力從真空狀態增加至大氣壓力時，可由與該研磨裝置放置處之大氣隔離之氣體源供給一氣體至該壓力室。因此，可避免含有水分之空氣進入壓力室，故在壓力室中不會出現彈性薄膜結露之情形。According to the present invention, when the pressure of the pressure chamber is increased from the vacuum state to the atmospheric pressure, a gas can be supplied to the pressure chamber from a gas source isolated from the atmosphere where the grinding device is placed. Therefore, air containing moisture can be prevented from entering the pressure chamber, so that no condensation of the elastic film occurs in the pressure chamber.

為了達成上述目的，根據本發明之第六態樣，係提供用以研磨基板之研磨裝置其包含：具有研磨表面之研磨台、一基板固持裝置其係經構形為可將基板固定並將基板壓抵著該研磨表面。該基板固持裝置包含一彈性薄膜其係經構形以形成一基板固持表面而與該基板接觸、一載具係設置於該彈性薄膜上方、至少一個壓力室其係形成於該彈性薄膜與該載具之間、以及與該壓力室連通之第一通道，其中僅有露點溫度(dew-point temperature)在大氣壓力下不超過20℃之氣體供給入該壓力室。In order to achieve the above object, according to a sixth aspect of the present invention, there is provided a polishing apparatus for polishing a substrate, comprising: a polishing table having an abrasive surface, and a substrate holding device configured to fix the substrate and the substrate Pressed against the abrasive surface. The substrate holding device comprises an elastic film configured to form a substrate holding surface to be in contact with the substrate, a carrier disposed above the elastic film, and at least one pressure chamber formed on the elastic film and the carrier A first passage between and with the pressure chamber, wherein only a dew-point temperature gas at a pressure of not more than 20 ° C at atmospheric pressure is supplied into the pressure chamber.

根據本發明，當壓力室之壓力從真空狀態增加至大氣壓力時，縱然該彈性薄膜被用以清洗頂環或類似物之去離子水(deionized water)(純水)所冷卻，僅有露點溫度在大氣壓力下不超過20℃之氣體供給入該壓力室。職是，在壓力室中不會出現彈性薄膜結露之情形。According to the present invention, when the pressure of the pressure chamber is increased from the vacuum state to the atmospheric pressure, even if the elastic film is cooled by deionized water (pure water) for cleaning the top ring or the like, only the dew point temperature is Gas that does not exceed 20 ° C at atmospheric pressure is supplied to the pressure chamber. The job is that there is no elastic film condensation in the pressure chamber.

根據本發明，例如半導體晶圓之基板之溫度，可藉由估算基板之溫度而加以控制。更具體而言，本發明有下列之效果：According to the present invention, the temperature of a substrate such as a semiconductor wafer can be controlled by estimating the temperature of the substrate. More specifically, the present invention has the following effects:

(1)當基板在研磨期間溫度增加時，研磨墊剛性降低，而使得研磨平整性降低。此乃因基板圖案表面粗糙處之凹部，由於研磨墊剛性之降低，而被研磨所致，也因此最後無法達成階高(step height)之去除。根據本發明，基板溫度可以高準確度地估算，且若基板溫度達到一預定值或更高，則研磨條件等因素將會改變，因而抑制基板溫度之升高。(1) When the temperature of the substrate increases during the grinding, the rigidity of the polishing pad is lowered, so that the polishing flatness is lowered. This is because the concave portion of the surface of the substrate pattern is roughened due to the decrease in the rigidity of the polishing pad, and therefore the step height removal cannot be achieved. According to the present invention, the substrate temperature can be estimated with high accuracy, and if the substrate temperature reaches a predetermined value or higher, factors such as grinding conditions are changed, thereby suppressing an increase in the substrate temperature.

(2)由於研磨漿引起基板表面之化學變化，反應溫度是非常重要之參數。根據本發明，由於基板溫度可被高準確度地估算，基板可在一適於各種製程內研磨漿特性之溫度範圍內被研磨。例如，在一預定值或較高研磨溫度下，研磨率降低之製程中，基板溫度可以高準確度地估算，而研磨條件被改變，遂使得研磨溫度不致增高到預定或較高之溫度。相較而言，在研磨率於一預定值或較低之溫度下，研磨條件被改變，因而不致於降低基板溫度至該預定或更低之溫度。此外，在製程中出現基板有異物或刮痕之缺陷時，階高移除之執行、研磨穩定性、以及類似者等將視研磨溫度而非研磨率而定，而研磨溫度將會顧及到基板上之缺陷、階高移除之執行、研磨穩定性等效果之影響而進行控制。(2) The reaction temperature is a very important parameter due to the chemical change of the surface of the substrate caused by the slurry. According to the present invention, since the substrate temperature can be estimated with high accuracy, the substrate can be ground in a temperature range suitable for the properties of the slurry in various processes. For example, in a process in which the polishing rate is lowered at a predetermined value or a higher grinding temperature, the substrate temperature can be estimated with high accuracy, and the grinding conditions are changed so that the grinding temperature is not increased to a predetermined or higher temperature. In comparison, the polishing conditions are changed at a polishing rate of a predetermined value or lower, so that the substrate temperature is not lowered to the predetermined or lower temperature. In addition, when defects in foreign matter or scratches on the substrate occur during the process, the execution of the step removal, the polishing stability, and the like are determined depending on the polishing temperature rather than the polishing rate, and the polishing temperature will take into account the substrate. Control is performed by the effects of the above defects, the execution of the step removal, and the polishing stability.

(3)根據本發明，由於基板溫度可以高準確度地估算，基板表面內之溫度分布可以高準確度地掌握。然後，藉著控制基板表面內之溫度分布而使之一致，基板表面內之研磨特性可均勻地控制，或使得基板表面內之溫度受到控制成所希望之溫度分佈。例如，在研磨前基板膜厚(film thickness)分佈不均勻之情形下，為了在研磨後基板膜厚能夠一致，即可在研磨期間利用控制基板溫度使基板內溫度分佈，以便有意地產生基板內之溫度分佈。(3) According to the present invention, since the substrate temperature can be estimated with high accuracy, the temperature distribution in the surface of the substrate can be grasped with high accuracy. Then, by controlling the temperature distribution in the surface of the substrate to be uniform, the polishing characteristics in the surface of the substrate can be uniformly controlled, or the temperature in the surface of the substrate can be controlled to a desired temperature distribution. For example, in the case where the film thickness distribution of the substrate before polishing is uneven, in order to make the film thickness of the substrate uniform after polishing, the temperature distribution in the substrate can be controlled by the temperature of the substrate during the polishing so as to intentionally generate the substrate. Temperature distribution.

再者，根據本發明，由於可進行薄膜(彈性薄膜)溫度之估算以及基板之溫度估算，可獲致以下之效果。Further, according to the present invention, since the temperature estimation of the film (elastic film) and the temperature estimation of the substrate can be performed, the following effects can be obtained.

(1)藉著估算薄膜之溫度，即可間接地獲致上述之基板溫度估算效果。(1) By estimating the temperature of the film, the above-mentioned substrate temperature estimation effect can be indirectly obtained.

(2)薄膜藉著溫度而熱膨脹。由於固定環係位於薄膜之外周側，倘若薄膜熱膨脹擴大，薄膜所膨脹之外周側即會碰觸固定環之內周側，因而限制住薄膜之外周側。然後，該薄膜形成皺紋或薄膜被變形，因此阻礙薄膜對基板之加壓。根據本發明，由於薄膜溫度可掌握，即可控制薄膜之熱膨脹量，而使薄膜溫度受到控制，以致不會使薄膜與固定環碰觸。(2) The film thermally expands by temperature. Since the fixing ring is located on the outer peripheral side of the film, if the thermal expansion of the film is expanded, the peripheral side of the film is in contact with the inner peripheral side of the fixing ring, thereby confining the outer peripheral side of the film. Then, the film forms wrinkles or the film is deformed, thereby hindering the film from being pressed against the substrate. According to the present invention, since the film temperature is graspable, the amount of thermal expansion of the film can be controlled, and the film temperature is controlled so that the film does not come into contact with the fixing ring.

(3)當薄膜溫度增加時，薄膜之硬度(hardness)降低(薄膜變得較軟)，也因此尤其是施加於基板上外周緣部分之壓力改變。在正常情況下，藉著將薄膜之外周緣部份充氣而壓抵基板。當薄膜之硬性降低時，使薄膜充氣所需之橡膠張力降低，而使氣袋(air bag)(施加至薄膜之壓力)因橡膠張力而降低壓力損失。其結果是，施加至基板之壓力超過預期。根據本創作，由於薄膜溫度可掌握並控制，薄膜之硬性可保持在一相當範圍內，而使得施加於基板之壓迫力保持在一合意之常數值。再者，基於薄膜之溫度，氣袋之壓力可予以控制，而使得施加於基板之壓迫力保持常數。具體而言，當薄膜溫度增加時，薄膜即變軟，而減少氣袋之壓力。(3) When the temperature of the film is increased, the hardness of the film is lowered (the film becomes soft), and thus the pressure applied to the outer peripheral portion of the substrate is changed in particular. Under normal conditions, the substrate is pressed against by inflating the outer peripheral portion of the film. When the hardness of the film is lowered, the rubber tension required to inflate the film is lowered, and the air bag (pressure applied to the film) is reduced in pressure due to rubber tension. As a result, the pressure applied to the substrate exceeds expectations. According to the present creation, since the film temperature can be grasped and controlled, the hardness of the film can be maintained within a certain range, so that the pressing force applied to the substrate is maintained at a desired constant value. Further, based on the temperature of the film, the pressure of the air bag can be controlled so that the pressing force applied to the substrate is kept constant. Specifically, as the film temperature increases, the film becomes soft and the pressure of the air bag is reduced.

此外，根據本發明，當壓力室之壓力自真空狀態增至大氣壓力狀態時，在研磨機置放處之大氣中的空氣即可從一與大氣隔離之氣體源供給至該壓力室。因此，可避免含有水分之空氣進入壓力室內，而壓力室內之彈性薄膜亦可免於發生結露現象。Further, according to the present invention, when the pressure of the pressure chamber is increased from the vacuum state to the atmospheric pressure state, the air in the atmosphere at which the grinder is placed can be supplied to the pressure chamber from a gas source isolated from the atmosphere. Therefore, air containing moisture can be prevented from entering the pressure chamber, and the elastic film in the pressure chamber can also be prevented from dew condensation.

茲將根據本發明實施例之研磨裝置將參照第1圖至第22圖敘述於後，類似或相對應之組件將於圖式中以類似或相對應之件號標示，而不重複敘述於後。BRIEF DESCRIPTION OF THE DRAWINGS A grinding apparatus according to an embodiment of the present invention will be described with reference to Figs. 1 through 22, and similar or corresponding components will be designated by similar or corresponding part numbers in the drawings without repeating the description. .

第1圖係根據本發明一實施例研磨裝置之整體結構示意圖，如第1圖所示，該研磨裝置包含一研磨台100以及一頂環1，該頂環1可供固持一個被研磨物體例如半導體晶圓之基板，並將該基板壓抵在該研磨台100之研磨表面上。1 is a schematic view showing the overall structure of a polishing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the polishing apparatus includes a polishing table 100 and a top ring 1 for holding an object to be polished, for example. A substrate of a semiconductor wafer is pressed against the abrasive surface of the polishing table 100.

該研磨台100係藉由一台軸(table shaft)100a而連結至置於該研磨台100下方之馬達(未示)，因此該研磨台100係繞著該台軸100a轉動。研磨墊101係附裝於該研磨台100之上表面，研磨墊101之上表面101a構成研磨表面以便對半導體晶圓W進行研磨。研磨液供給噴嘴102係設置於該研磨台100上方，俾供給研磨液(研磨漿)Q至研磨台100上之研磨墊101。The polishing table 100 is coupled to a motor (not shown) disposed under the polishing table 100 by a table shaft 100a. Therefore, the polishing table 100 is rotated about the table axis 100a. The polishing pad 101 is attached to the upper surface of the polishing table 100, and the upper surface 101a of the polishing pad 101 constitutes an abrasive surface to polish the semiconductor wafer W. The polishing liquid supply nozzle 102 is disposed above the polishing table 100, and supplies a polishing liquid (polishing slurry) Q to the polishing pad 101 on the polishing table 100.

各式之研磨墊可從市面上獲得，這些例如由Nitta-Haas Inc.所製造之SUBA800、IC-1000、以及IC-1000/SUBA400(兩層布)，以及由Fujimi Inc.所製造之Surfin xxx-5與Surfin 000，而Surfin 000係由聚氨酯樹脂(urethane resin)所黏著之不織布(non-woven fabrics)，而IC-1000則由剛性發泡聚氨酯(rigid foamed polyurethane)所製成(單層)。發泡聚氨酯係多孔性並在其表面形成大量之微細凹穴或孔洞。Various types of polishing pads are commercially available, such as SUBA800, IC-1000, and IC-1000/SUBA400 (two-layer cloth) manufactured by Nitta-Haas Inc., and Surfin xxx manufactured by Fujimi Inc. -5 and Surfin 000, while Surfin 000 is made of non-woven fabrics bonded by urethane resin, while IC-1000 is made of rigid foamed polyurethane (single layer) . The foamed polyurethane is porous and forms a large number of fine cavities or holes on its surface.

該頂環1基本上包含頂環體2可將半導體晶圓W壓抵於該研磨表面101a上、以及固定環3可將該半導體晶圓W之外圍邊緣予以固持，俾避免該半導體晶圓W滑出該頂環1。The top ring 1 basically includes a top ring body 2 for pressing the semiconductor wafer W against the polishing surface 101a, and the fixing ring 3 can hold the peripheral edge of the semiconductor wafer W to avoid the semiconductor wafer W. Slide out the top ring 1.

該頂環1係連接於頂環軸111，且該頂環軸111藉由垂直移動機構124而沿著頂環頭110垂直移動。當該頂環軸111垂直移動時，該頂環1被整個升起或下降，以便沿著該頂環頭110而定位。旋轉接頭25安裝於該頂環頭110之上端。該垂直移動機構124垂直移動該頂環軸111及該頂環1，而具有橋部(bridge)128支撐該頂環軸111而使頂環軸111可藉由軸承126、安裝於該橋部128上之滾珠螺桿132、由數桿130所支撐之支撐板(support stage)129以及設置於該支撐板129上之交流伺服馬達138而轉動。該支撐板129支撐著交流伺服馬達138且藉由數桿130而固定於該頂環頭110上。The top ring 1 is coupled to the top ring shaft 111, and the top ring shaft 111 is vertically moved along the top ring head 110 by a vertical moving mechanism 124. When the top ring shaft 111 moves vertically, the top ring 1 is raised or lowered as a whole to be positioned along the top ring head 110. A rotary joint 25 is mounted to the upper end of the top ring head 110. The vertical movement mechanism 124 vertically moves the top ring shaft 111 and the top ring 1 , and has a bridge 128 supporting the top ring shaft 111 such that the top ring shaft 111 can be mounted to the bridge portion 128 by bearings 126 . The upper ball screw 132 is supported by a support stage 129 supported by the plurality of rods 130 and an AC servo motor 138 provided on the support plate 129. The support plate 129 supports the AC servo motor 138 and is fixed to the top ring head 110 by a plurality of rods 130.

該滾珠螺桿132具有連結於該交流伺服馬達138之螺軸132a、以及螺裝該螺軸132a之螺帽132b。該頂環軸111係經構形為可與該橋部128一同垂直移動者。因此，當該交流伺服馬達138被驅動時，該橋部128係藉由該滾珠螺桿132而垂直地被移動。結果，該頂環軸111以及該頂環1被垂直地移動。The ball screw 132 has a screw shaft 132a coupled to the AC servo motor 138, and a nut 132b that screws the screw shaft 132a. The top ring shaft 111 is configured to be vertically movable with the bridge portion 128. Therefore, when the AC servo motor 138 is driven, the bridge portion 128 is vertically moved by the ball screw 132. As a result, the top ring shaft 111 and the top ring 1 are vertically moved.

此外，該頂環軸111係藉著一鍵(未示)而連接一旋轉套筒112，該旋轉套筒112具有一同步輪(timing pulley)113圍繞旋轉套筒112而固定地設置。頂環馬達114係固定於該頂環頭110上，該同步輪113係藉由一同步帶115而被以可操作方式連結至一設置於該頂環馬達114上之同步輪116。是故，當該頂環馬達114被驅動時，該同步輪116、同步帶115、以及該同步輪113係被帶動旋轉而使旋轉套筒112與該頂環軸111一致地旋轉，因而轉動該頂環1。該頂環頭110係被支撐於一頂環頭軸117上，而該頂環頭軸117係被一框架(未示)以旋轉方式支撐著。該研磨裝置具有一控制器50俾控制包括該頂環馬達114、該交流伺服馬達138、該研磨台馬達及類似者之各個裝置。Further, the top ring shaft 111 is coupled to a rotary sleeve 112 by a key (not shown) having a timing pulley 113 fixedly disposed around the rotary sleeve 112. The top ring motor 114 is fixed to the top ring head 110. The synchronous wheel 113 is operatively coupled to a synchronous wheel 116 disposed on the top ring motor 114 by a timing belt 115. Therefore, when the top ring motor 114 is driven, the synchronous wheel 116, the timing belt 115, and the synchronous wheel 113 are rotated to rotate the rotating sleeve 112 in unison with the top ring shaft 111, thereby rotating the Top ring 1. The top ring head 110 is supported on a top ring head shaft 117 which is rotatably supported by a frame (not shown). The polishing apparatus has a controller 50 that controls each of the devices including the top ring motor 114, the AC servo motor 138, the polishing table motor, and the like.

在如第1圖所示構造之研磨裝置中，該頂環1經構形以便將例如半導體晶圓W固持於其下表面上。該頂環頭110係繞著該頂環頭軸117樞轉，因此，該頂環1將晶圓W固持於其下表面上而藉由該頂環頭110之樞轉運動，而從該頂環1收納晶圓W之位置被移至該研磨台100上方位置。從而該頂環1即被降下而將半導體晶圓W壓抵於研磨墊101之表面(研磨表面)101a。此時，當該頂環1及該研磨台100被分別轉動時，研磨液即從設置於該研磨台100上方之供給噴嘴102，供給至研磨墊101上。以此方式，半導體晶圓W即與研磨墊101之表面101a作滑動接觸。是故，該半導體晶圓W之表面得以被研磨。In the polishing apparatus constructed as shown in Fig. 1, the top ring 1 is configured to hold, for example, a semiconductor wafer W on its lower surface. The top ring head 110 pivots about the top ring head shaft 117. Therefore, the top ring 1 holds the wafer W on the lower surface thereof by the pivotal movement of the top ring head 110, and from the top The position at which the ring 1 accommodates the wafer W is moved to a position above the polishing table 100. Thereby, the top ring 1 is lowered to press the semiconductor wafer W against the surface (abrasive surface) 101a of the polishing pad 101. At this time, when the top ring 1 and the polishing table 100 are respectively rotated, the polishing liquid is supplied from the supply nozzle 102 provided above the polishing table 100 to the polishing pad 101. In this manner, the semiconductor wafer W is in sliding contact with the surface 101a of the polishing pad 101. Therefore, the surface of the semiconductor wafer W is ground.

其次參照第2圖將根據本發明研磨裝置之頂環(研磨環)敘述如後。第2圖係一剖面示意圖，顯示構成基板固持裝置之頂環1，該頂環可將作為被研磨物之半導體晶圓W固持住，並將該半導體晶圓W壓抵住研磨台上之研磨表面。第2圖僅顯示構成該頂環1之主要結構元件。Next, referring to Fig. 2, the top ring (grinding ring) of the polishing apparatus according to the present invention will be described later. Figure 2 is a cross-sectional view showing the top ring 1 constituting the substrate holding device, which holds the semiconductor wafer W as the object to be polished, and presses the semiconductor wafer W against the grinding table. surface. Fig. 2 shows only the main structural elements constituting the top ring 1.

如第2圖所示，該頂環1基本上包含一頂環體(亦稱為載具)2可供將一半導體晶圓W壓抵該研磨表面101a、以及一固定環3可供將該研磨表面101a直接壓住。該頂環體(載具)2為一圓板構形，而該固定環3係附裝於該頂環體2之周圍部分。該頂環體2係由例如工程塑膠(engineering plastics)之樹脂(如聚醚醚酮(PEEK))製成。如第2圖所示，該頂環1具有附裝於該頂環體2之底面之彈性薄膜4。該彈性薄膜4與受該頂環1固持之半導體晶圓背面接觸，而該彈性薄膜4係由很堅強且耐久之橡膠材料(例如乙丙橡膠(ethylene propylene rubber,EPDM)、聚氨酯橡膠(polyurethane rubber)、矽橡膠(silicone rubber)、或類似者)所製成。該彈性薄膜4構成基板固持表面以便將例如半導體晶圓之基板固持住。As shown in FIG. 2, the top ring 1 basically includes a top ring body (also referred to as a carrier) 2 for pressing a semiconductor wafer W against the polishing surface 101a, and a fixing ring 3 for The abrasive surface 101a is directly pressed. The top ring body (carrier) 2 is a circular plate configuration, and the fixing ring 3 is attached to a peripheral portion of the top ring body 2. The top ring body 2 is made of, for example, a resin of engineering plastics such as polyetheretherketone (PEEK). As shown in Fig. 2, the top ring 1 has an elastic film 4 attached to the bottom surface of the top ring body 2. The elastic film 4 is in contact with the back surface of the semiconductor wafer held by the top ring 1, and the elastic film 4 is made of a strong and durable rubber material (for example, ethylene propylene rubber (EPDM), urethane rubber (polyurethane rubber). ), made of silicone rubber, or the like. The elastic film 4 constitutes a substrate holding surface for holding a substrate such as a semiconductor wafer.

該彈性薄膜4具有複數之同心隔牆4a，並且由介於該彈性薄膜4之上表面與該頂環體2之下表面間之各隔牆4a界定一圓形中心室(central chamber)5、一環狀波紋室(ripple chamber)6、一環狀外室(outer chamber)7、以及一環狀邊緣室(edge chamber)8。具體而言，該中心室5係界定於該頂環體2之中心部分，而該波紋室6、該外室7以及該邊緣室8係呈同心地依序自該頂環體2之中心部分至周圍部分被界定者。該頂環體2中形成有與該中心室5連通之通道11、與該波紋室6連通之通道12、與該外室7連通之通道13、以及與該邊緣室8連通之通道14。與該中心室5連通之通道11、與該外室7連通之通道13、以及與該邊緣室8連通之通道14係分別藉由一旋轉接頭25而連接至通道21、通道23、以及通道24。而通道21、通道23、以及通道24分別經由各閥V1-1、V3-1、與V4-1，以及各壓力調節器R1、R3、與R4，而與一壓力調節單元30連接。再者，通道21、通道23、以及通道24分別經由各閥V1-2、V3-2、與V4-2而連接至一真空源31，並且經由各閥V1-3、V3-3、與V4-3而能夠與大氣相連通。The elastic film 4 has a plurality of concentric partition walls 4a, and defines a circular central chamber 5 by a partition wall 4a interposed between the upper surface of the elastic film 4 and the lower surface of the top ring body 2. An annular ripple chamber 6, an outer chamber 7, and an annular edge chamber 8. Specifically, the central chamber 5 is defined in a central portion of the top ring body 2, and the corrugated chamber 6, the outer chamber 7, and the edge chamber 8 are concentrically sequentially from the central portion of the top ring body 2. To the surrounding part is defined. The top ring body 2 is formed with a passage 11 communicating with the central chamber 5, a passage 12 communicating with the corrugated chamber 6, a passage 13 communicating with the outer chamber 7, and a passage 14 communicating with the edge chamber 8. A passage 11 communicating with the central chamber 5, a passage 13 communicating with the outer chamber 7, and a passage 14 communicating with the edge chamber 8 are connected to the passage 21, the passage 23, and the passage 24 by a rotary joint 25, respectively. . The passage 21, the passage 23, and the passage 24 are connected to a pressure adjusting unit 30 via the respective valves V1-1, V3-1, and V4-1, and the pressure regulators R1, R3, and R4, respectively. Furthermore, the channel 21, the channel 23, and the channel 24 are connected to a vacuum source 31 via valves V1-2, V3-2, and V4-2, respectively, and via valves V1-3, V3-3, and V4. -3 can communicate with the atmosphere.

另外，與該波紋室6連通之通道12可藉由該旋轉接頭25而連接至通道22，隨後該通道22透過氣-液分離器35、閥V2-1與壓力調節器R2而與該壓力調節單元30連接。此外，通道22係經由該氣-液分離器35以及閥V2-2而與真空源131連接，並且能夠透過該閥V2-3而與大氣連通。In addition, the passage 12 communicating with the corrugated chamber 6 can be connected to the passage 22 by the rotary joint 25, and then the passage 22 passes through the gas-liquid separator 35, the valve V2-1 and the pressure regulator R2, and the pressure adjustment Unit 30 is connected. Further, the passage 22 is connected to the vacuum source 131 via the gas-liquid separator 35 and the valve V2-2, and is communicated with the atmosphere through the valve V2-3.

再者，由彈性薄膜所構成之固定環壓力室9係形成於緊接在該固定環3之上方，且該固定環壓力室9係藉由形成於該頂環體2(載具)內之通道15以及該旋轉接頭25而與該通道26連接。隨後，該通道26經由閥V5-1與壓力調節器R5而與該壓力調節單元30連接。此外，該通道26經由閥V5-2而連接至該真空源31，並且經由閥V5-3而能夠與大氣相連通。壓力調節器R1、R2、R3、R4與R5具有壓力調節功能，以便調節自該壓力調節單元30分別供給至該中心室5、該波紋室、該外室7、該邊緣室8以及該固定環壓力室9之一加壓流體之各壓力。各壓力調節器R1、R2、R3、R4與R5，以及各閥V1-1至V1-3、V2-1至V2-3、V3-1至V3-3、V4-1至V4-3與V5-1至V5-3，皆與控制器50連接，且這些壓力調節器與閥之操作接受該控制器50所控制。再者，在各通道21、22、23、24與26中分別設有壓力感測器P1、P2、P3、P4與P5以及流率感測器F1、F2、F3、F4與F5。Further, a fixing ring pressure chamber 9 composed of an elastic film is formed immediately above the fixing ring 3, and the fixing ring pressure chamber 9 is formed in the top ring body 2 (carrier) The passage 15 and the rotary joint 25 are connected to the passage 26. Subsequently, the passage 26 is connected to the pressure regulating unit 30 via a valve V5-1 and a pressure regulator R5. Further, the passage 26 is connected to the vacuum source 31 via the valve V5-2, and is communicable with the atmosphere via the valve V5-3. The pressure regulators R1, R2, R3, R4 and R5 have pressure regulating functions for adjustment from the pressure regulating unit 30 to the central chamber 5, the corrugated chamber, the outer chamber 7, the edge chamber 8, and the retaining ring One of the pressure chambers 9 pressurizes the respective pressures of the fluid. Pressure regulators R1, R2, R3, R4 and R5, and valves V1-1 to V1-3, V2-1 to V2-3, V3-1 to V3-3, V4-1 to V4-3 and V5 -1 to V5-3 are all connected to the controller 50, and the operation of these pressure regulators and valves is controlled by the controller 50. Further, pressure sensors P1, P2, P3, P4, and P5 and flow rate sensors F1, F2, F3, F4, and F5 are provided in the respective channels 21, 22, 23, 24, and 26, respectively.

再如第2圖所示之頂環1中，該中心室5係界定於該頂環體2之中心部分，而該波紋室6、該外室7以及該邊緣室8係呈同心地依序自該頂環體2之中心部分至周圍部分被界定者。供給至該中心室5、該波紋室6、該外室7、該邊緣室8、以及該固定環壓力室9之流體之各壓力，係由該壓力調節單元30以及各壓力調節器R1、R2、R3、R4與R5所獨立控制。藉著此種結構，壓抵該半導體晶圓W使之壓抵該研磨墊101之各個壓迫力，可在該半導體W之各個區域加以調整，而且藉由該控制環3而壓迫該研磨墊101之壓迫力可加以調整。Further, in the top ring 1 shown in FIG. 2, the center chamber 5 is defined in a central portion of the top ring body 2, and the corrugated chamber 6, the outer chamber 7, and the edge chamber 8 are concentrically arranged. From the central portion of the top ring body 2 to the surrounding portion is defined. The pressures of the fluid supplied to the central chamber 5, the corrugated chamber 6, the outer chamber 7, the edge chamber 8, and the fixed ring pressure chamber 9 are controlled by the pressure adjusting unit 30 and the pressure regulators R1, R2. R3, R4 and R5 are independently controlled. With such a structure, the pressing force of the semiconductor wafer W against the polishing pad 101 can be adjusted in various regions of the semiconductor W, and the polishing pad 101 is pressed by the control ring 3. The pressure can be adjusted.

其次，如第1圖與第2圖所示之研磨裝置之相繼之研磨操作，將敘述如後。Next, successive grinding operations of the polishing apparatus as shown in Figs. 1 and 2 will be described later.

該頂環1在真空下自基板傳輸裝置(推移裝置)接納並固持半導體晶圓W，因此，在真空下固持半導體晶圓W之頂環1被下降至該頂環之先前即已事先設定之預設研磨位置。該固定環3在該預設研磨位置上，與研磨墊101之表面(研磨表面)101a接觸。在該半導體晶圓W被研磨之前，由於該半導體晶圓W被該頂環1吸引並固持，在介於半導體晶圓W之底面(被研磨表面)以及該研磨墊101之研磨表面101a之間，有一大約1毫米(1mm)之小缺口。此時，該研磨台100及該頂環1被繞著本身之軸線而轉動，在此狀態下，位於半導體晶圓W上面(反面)之彈性薄膜4即在輸入流體之壓力下膨脹，俾壓抵半導體晶圓W之下表面(被研磨表面)抵住研磨墊101之研磨表面101a。當該研磨台100及該頂環1被彼此相對移動時，半導體晶圓W之下表面(被研磨表面)被研磨至一預定狀態(例如一預定之膜厚度)。當研磨半導體晶圓W在研磨墊101上被完成後，頂環1即在真空下固持住半導體晶圓W，且頂環1被升高並移至該基板傳輸裝置(推移裝置)，然後，經研磨之半導體晶圓W即自該頂環1被移除(釋放)。The top ring 1 receives and holds the semiconductor wafer W from the substrate transfer device (transfer device) under vacuum. Therefore, the top ring 1 holding the semiconductor wafer W under vacuum is lowered to the front of the top ring, which is previously set. Preset the grinding position. The fixing ring 3 is in contact with the surface (abrasive surface) 101a of the polishing pad 101 at the predetermined polishing position. Before the semiconductor wafer W is polished, the semiconductor wafer W is attracted and held by the top ring 1 between the bottom surface (the surface to be polished) of the semiconductor wafer W and the polishing surface 101a of the polishing pad 101. There is a small gap of about 1 mm (1 mm). At this time, the polishing table 100 and the top ring 1 are rotated about their own axes. In this state, the elastic film 4 located on the upper surface (reverse surface) of the semiconductor wafer W is expanded under the pressure of the input fluid, and is pressed. The surface (the surface to be polished) against the semiconductor wafer W is pressed against the polishing surface 101a of the polishing pad 101. When the polishing table 100 and the top ring 1 are moved relative to each other, the lower surface (the surface to be polished) of the semiconductor wafer W is ground to a predetermined state (for example, a predetermined film thickness). After the ground semiconductor wafer W is completed on the polishing pad 101, the top ring 1 holds the semiconductor wafer W under vacuum, and the top ring 1 is lifted and moved to the substrate transfer device (moving device), and then The ground semiconductor wafer W is removed (released) from the top ring 1.

第3圖係顯示該頂環1之主要結構元件之剖面示意圖。如第3圖所示，該頂環1基本上包含可將一半導體晶圓W(基板)壓抵於該研磨墊101上之頂環體2、以及可直接壓抵該研磨表面101a之固定環3。該頂環體2包含一個位於上方部分之頂環凸緣41、一個位於中間部分之頂環分隔件42、以及一個位於下方部分之載具43。Figure 3 is a schematic cross-sectional view showing the main structural elements of the top ring 1. As shown in FIG. 3, the top ring 1 basically comprises a top ring body 2 capable of pressing a semiconductor wafer W (substrate) against the polishing pad 101, and a fixing ring directly pressed against the polishing surface 101a. 3. The top ring body 2 includes a top ring flange 41 at the upper portion, a top ring spacer 42 at the intermediate portion, and a carrier 43 at the lower portion.

該彈性薄膜4具有複數個同心隔牆4a，而由介於該彈性薄膜4之上表面與該頂環體2之下表面間之各隔牆4a界定一圓形中心室5、一環狀波紋室6、一環狀外室7、以及一環狀邊緣室8。具體而言，該中心室5係界定於該頂環體2之中心部分，而該波紋室6、該外室7以及該邊緣室8係呈同心地依序自該頂環體2之中心部分至周圍部分被界定者。該頂環體2中形成有與該中心室5連通之通道11、與該波紋室6連通之通道12、與該外室7連通之通道13、以及與該邊緣室8連通之通道14。然後，與該中心室5連通之通道11、與該波紋室6連通之通道12、與該外室7連通之通道13、以及與該邊緣室8連通之通道14係分別藉由一旋轉接頭25而連接至各個壓力室壓力管線(未示)。各個壓力室壓力管線係經由各壓力調節器R1、R3、與R4(參第2圖)而與該壓力調節單元30連接(參第2圖)。The elastic film 4 has a plurality of concentric partition walls 4a, and a partition wall 4a between the upper surface of the elastic film 4 and the lower surface of the top ring body 2 defines a circular center chamber 5 and an annular corrugated chamber. 6. An annular outer chamber 7, and an annular edge chamber 8. Specifically, the central chamber 5 is defined in a central portion of the top ring body 2, and the corrugated chamber 6, the outer chamber 7, and the edge chamber 8 are concentrically sequentially from the central portion of the top ring body 2. To the surrounding part is defined. The top ring body 2 is formed with a passage 11 communicating with the central chamber 5, a passage 12 communicating with the corrugated chamber 6, a passage 13 communicating with the outer chamber 7, and a passage 14 communicating with the edge chamber 8. Then, a passage 11 communicating with the central chamber 5, a passage 12 communicating with the corrugated chamber 6, a passage 13 communicating with the outer chamber 7, and a passage 14 communicating with the edge chamber 8 are respectively passed through a rotary joint 25 It is connected to various pressure chamber pressure lines (not shown). Each pressure chamber pressure line is connected to the pressure regulating unit 30 via respective pressure regulators R1, R3, and R4 (see Fig. 2) (see Fig. 2).

再者，由一彈性薄膜32所構成之一固定環壓力室9係形成於緊接在該固定環3之上方。該彈性薄膜32係容置於固定在該頂環凸緣41之一圓筒33內。該固定環壓力室9係藉由一形成於該頂環體2內之通道15以及該旋轉接頭25(參照第1圖)而與該壓力室壓力管線(未示)連接。隨後，該固定環壓力室9之壓力室壓力管線即經由壓力調節器R5(參照第2圖)而與該壓力調節單元30連接(參照第2圖)。Further, a fixed ring pressure chamber 9 composed of an elastic film 32 is formed immediately above the fixed ring 3. The elastic film 32 is housed in a cylinder 33 fixed to one of the top ring flanges 41. The fixed ring pressure chamber 9 is connected to the pressure chamber pressure line (not shown) by a passage 15 formed in the top ring body 2 and the rotary joint 25 (see Fig. 1). Subsequently, the pressure chamber pressure line of the fixed ring pressure chamber 9 is connected to the pressure adjusting unit 30 via a pressure regulator R5 (see Fig. 2) (see Fig. 2).

如第3圖所示，四個紅外線溫度計45係設於該頂環1之載具43上，具體而言，四個紅外線溫度計45係分別面對著該中心室5、該環狀波紋室6、該環狀外室7、以及該環狀邊緣室8，因此各紅外線溫度計45能夠分別在薄膜4相對應於各個壓力室5、6、7、8之部分量測溫度。此外，有一熱電偶48附裝於該頂環1之載具43之上表面上，因而該熱電偶48能夠量測載具43之溫度。各個紅外線溫度計45以及該熱電偶48係經由佈線而與一冷端溫度感測單元(cold junction temperature sensor unit)46連接。As shown in FIG. 3, four infrared thermometers 45 are provided on the carrier 43 of the top ring 1, specifically, four infrared thermometers 45 are respectively facing the center chamber 5 and the annular corrugated chamber 6 The annular outer chamber 7 and the annular edge chamber 8 can each measure the temperature of the thin film 4 corresponding to each of the pressure chambers 5, 6, 7, and 8, respectively. Further, a thermocouple 48 is attached to the upper surface of the carrier 43 of the top ring 1, so that the thermocouple 48 can measure the temperature of the carrier 43. Each of the infrared thermometers 45 and the thermocouples 48 are connected to a cold junction temperature sensor unit 46 via wiring.

根據本發明，該薄膜4之溫度係由紅外線溫度計45所量測，而基板之溫度則係利用薄膜4所量測之溫度而估算者。有一溫差電堆元件(thermopile element)裝置於紅外線溫度計45內。從該薄膜4發射出而作為量測標地之紅外線係入射於該溫差電堆元件上，且輸出相當於入射該溫差電堆元件上之紅外線量之熱電動勢(thermal electromotive force)。在本實施例中，有相當於K熱電偶輸出量之熱電動勢被輸出。此電動勢自紅外線溫度計45透過佈線，而施加於該冷端溫度感測單元46。該冷端溫度感測單元46具有一感測器，以量測大氣之溫度。該電動勢在該冷端溫度感測單元46內，被轉換為相當於K熱電偶之溫度，而將所量測之冷端溫度(cold junction temperature)加上所轉換之溫度，所獲得之溫度即為量測溫度。該冷端溫度感測單元46具有一類比-至-數位轉換器(analog-to-digital converter)，而將所量測之溫度經由該類比-至-數位轉換器轉換成一數位訊號，隨後該數位訊號即被輸送至一數據接收單元47。According to the present invention, the temperature of the film 4 is measured by an infrared thermometer 45, and the temperature of the substrate is estimated by the temperature measured by the film 4. A thermopile element is placed in the infrared thermometer 45. An infrared ray emitted from the film 4 as a measurement target is incident on the thermopile element, and outputs a thermo electromotive force corresponding to the amount of infrared rays incident on the thermopile element. In the present embodiment, a thermoelectromotive force equivalent to the output amount of the K thermocouple is output. This electromotive force is applied to the cold junction temperature sensing unit 46 through the wiring from the infrared thermometer 45. The cold junction temperature sensing unit 46 has a sensor to measure the temperature of the atmosphere. The electromotive force is converted into a temperature corresponding to the K thermocouple in the cold junction temperature sensing unit 46, and the measured cold junction temperature is added to the converted temperature, and the obtained temperature is To measure the temperature. The cold junction temperature sensing unit 46 has an analog-to-digital converter, and converts the measured temperature into a digital signal via the analog-to-digital converter, and then the digit The signal is sent to a data receiving unit 47.

由於來自該紅外線溫度計45之電動勢非常小，乃採取例如纏繞一屏蔽線於佈線周圍之抗噪音措施。此外，在熱電偶輸出被一連接器所連接的情形下，有必要使製造連接器之金屬材質與K熱電偶之金屬材質相同種類。依此方式量測自薄膜4射出之紅外線量，然而量測值與實際上之薄膜溫度卻出現差異。由於薄膜4上表面在很多情況下具有一定程度的反射係數(reflectance)，自頂環1之載具43所射出之紅外線自薄膜4被反射，而反射光線則被該紅外線溫度計45所測量。是故，該紅外線溫度計45被來自薄膜4之紅外線以及來自載具43之紅外線所影響。為了將此種影響降至最小，在薄膜4之上表面施加表面紋理(surface texturing)，俾降低紅外線之反射係數，藉以改善量測準確性。該表面紋理係在薄膜4表面形成微小之不均勻(minute unevenness)之加工。藉著在薄膜4表面形成微小之不均勻，以使得薄膜4上表面粗糙，即可降低紅外線之反射係數。因此，自載具43射至薄膜4之紅外線可免於自薄膜4反射，是故，紅外線溫度計45能夠高精確度地量測出來自受量測物薄膜4之紅外線發射量。以此方式，可減小薄膜4之反射係數，而降低了來自載具43之紅外線之影響，而薄膜4之溫度則以紅外線溫度計量測，然後基板之溫度即可利用所量測之薄膜溫度而加以估算。Since the electromotive force from the infrared thermometer 45 is very small, an anti-noise measure such as winding a shielded wire around the wiring is employed. Further, in the case where the thermocouple output is connected by a connector, it is necessary to make the metal material of the connector to be the same as the metal material of the K thermocouple. In this way, the amount of infrared rays emitted from the film 4 is measured, but the measured value differs from the actual film temperature. Since the upper surface of the film 4 has a certain degree of reflectance in many cases, the infrared rays emitted from the carrier 43 of the top ring 1 are reflected from the film 4, and the reflected light is measured by the infrared thermometer 45. Therefore, the infrared thermometer 45 is affected by the infrared rays from the film 4 and the infrared rays from the carrier 43. In order to minimize this effect, surface texturing is applied to the upper surface of the film 4, and the reflection coefficient of the infrared rays is lowered to improve the measurement accuracy. This surface texture is a process of forming minute unevenness on the surface of the film 4. By forming a slight unevenness on the surface of the film 4 so that the upper surface of the film 4 is rough, the reflection coefficient of infrared rays can be lowered. Therefore, the infrared rays emitted from the carrier 43 to the film 4 can be prevented from being reflected from the film 4, so that the infrared thermometer 45 can measure the amount of infrared radiation from the film 4 under test with high accuracy. In this way, the reflection coefficient of the film 4 can be reduced, and the influence of the infrared rays from the carrier 43 can be reduced, and the temperature of the film 4 can be measured by the infrared temperature, and then the temperature of the substrate can be utilized to measure the film temperature. And estimate it.

然而，在表面紋理未被施加於薄膜上表面之情形下，該紅外線溫度計45被來自薄膜4之紅外線以及來自載具43之紅外線所影響。職是，藉著熱電偶48量測載具43之溫度，以及運用紅外線溫度計45之量測值以及熱電偶之量測值，晶圓之溫度可以高準確地估算。載具之溫度量測可以非接觸型溫度計(noncontact-type thermometer)而與薄膜同一方式加以實施，或以接觸型熱電偶(contact-type thermocouple)實施。在使用接觸型熱電偶之情形下，將熱電偶連接至該冷端溫度感測單元46(如同使用紅外線溫度計45量測薄膜溫度一般)，而所量測之溫度則被輸送至該數據接收單元47。However, in the case where the surface texture is not applied to the upper surface of the film, the infrared thermometer 45 is affected by the infrared rays from the film 4 and the infrared rays from the carrier 43. The job is to measure the temperature of the carrier 43 by the thermocouple 48, and to measure the value of the infrared thermometer 45 and the measured value of the thermocouple, the temperature of the wafer can be estimated with high accuracy. The temperature measurement of the carrier can be carried out in the same manner as the film by a noncontact-type thermometer or by a contact-type thermocouple. In the case of using a contact type thermocouple, a thermocouple is connected to the cold junction temperature sensing unit 46 (as measured by the infrared thermometer 45), and the measured temperature is delivered to the data receiving unit. 47.

接著說明一種利用紅外線溫度計量測值與載具溫度量測值以計算晶圓溫度估算值之方法於後。第4圖係一剖面示意圖，顯示一實驗裝置，其可供當一半導體晶圓(基板)被加熱及冷卻時量測晶圓之溫度、薄膜之溫度、載具之溫度等各部位之溫度。如第4圖所示，有一紅外線溫度計45設於該頂環1之載具43上，有一熱電偶48附裝於該載具43之上表面上，有一熱電偶49附裝於該薄膜4之上表面上，有一熱電偶51附裝於該半導體晶圓W之下表面上。另外設有一個晶圓加熱及冷卻裝置52，可供加熱並冷卻該半導體晶圓W。Next, a method for calculating the wafer temperature estimation value by using the infrared temperature measurement value and the carrier temperature measurement value will be described. Figure 4 is a cross-sectional view showing an experimental apparatus for measuring the temperature of the wafer, the temperature of the film, the temperature of the carrier, and the like when a semiconductor wafer (substrate) is heated and cooled. As shown in FIG. 4, an infrared thermometer 45 is disposed on the carrier 43 of the top ring 1, a thermocouple 48 is attached to the upper surface of the carrier 43, and a thermocouple 49 is attached to the film 4. On the upper surface, a thermocouple 51 is attached to the lower surface of the semiconductor wafer W. In addition, a wafer heating and cooling device 52 is provided for heating and cooling the semiconductor wafer W.

該半導體晶圓W之下表面係經由強制加熱而加熱，且隨後利用第4圖所示之實驗裝置之強制冷卻而予以冷卻，並獲取熱電偶晶圓下表面溫度量測值、熱電偶薄膜上表面溫度量測值、紅外線溫度計量測值、以及載具溫度量測值。具體而言，晶圓下表面之溫度係由熱電偶51所量測、薄膜上表面之溫度係由熱電偶49所量測、紅外線溫度係由紅外線溫度計45所量測、以及載具之溫度係由熱電偶48所量測。在此情形下，經認為，由接觸型熱電偶所獲致之量測值誤差最小。在第4圖中，雖然溫度計僅設置於該中心室5，以便簡化解釋，然而在其它壓力室例如該環狀波紋室6、該環狀外室7等各部位之各個溫度亦可同時地加以量測。The lower surface of the semiconductor wafer W is heated by forced heating, and then cooled by forced cooling using the experimental apparatus shown in FIG. 4, and the temperature measurement of the lower surface of the thermocouple wafer is obtained, and the thermocouple film is obtained. Surface temperature measurement, infrared temperature measurement, and vehicle temperature measurement. Specifically, the temperature of the lower surface of the wafer is measured by the thermocouple 51, the temperature of the upper surface of the film is measured by the thermocouple 49, the infrared temperature is measured by the infrared thermometer 45, and the temperature of the carrier is measured. Measured by thermocouple 48. In this case, it is considered that the measurement error obtained by the contact type thermocouple is the smallest. In Fig. 4, although the thermometer is only disposed in the central chamber 5 in order to simplify the explanation, the temperature of each of the other pressure chambers, for example, the annular corrugated chamber 6, the annular outer chamber 7, and the like may be simultaneously applied. Measure.

第5圖係一圖表，係當半導體晶圓(基板)W之下表面，因藉著使用第4圖所示之實驗裝置而被強制加熱所加熱時，以及隨後被強制冷卻所冷卻時，各該溫度之時間變數所繪製之圖。如第5圖所示，由於半導體晶圓係下表面側被強制加熱所加熱者，半導體晶圓之溫度上升最快，隨後發生薄膜上表面溫度上升，而載具之溫度上升最慢。因此，在半導體晶圓下表面側被轉移為強制冷卻之情形下，半導體晶圓之溫度下降最快，隨後發生薄膜上表面溫度下降，而載具之溫度下降最慢。紅外線溫度計量測值及薄膜上表面量測值，在加熱期間與冷卻期間，顯示有幾乎相同的趨勢。Figure 5 is a diagram showing the surface of the semiconductor wafer (substrate) W, which is heated by forced heating by using the experimental apparatus shown in Fig. 4, and then cooled by forced cooling. A plot of the time variation of this temperature. As shown in Fig. 5, since the lower surface side of the semiconductor wafer is heated by forced heating, the temperature rise of the semiconductor wafer is the fastest, and then the temperature of the upper surface of the film rises, and the temperature of the carrier rises the slowest. Therefore, in the case where the lower surface side of the semiconductor wafer is transferred to forced cooling, the temperature of the semiconductor wafer drops the fastest, and then the temperature of the upper surface of the film drops, and the temperature of the carrier drops the slowest. The infrared temperature measurement value and the film upper surface measurement value showed almost the same tendency during heating and during cooling.

第6A圖及第6B圖係利用第5圖所示之所有時間序列數據(time-series data)所繪製之圖表，其中紅外線溫度計量測值係繪於水平軸線，而同時由熱電偶所量測之薄膜上表面溫度量測值係繪於垂直軸線上。第6A圖顯示，薄膜上表面並未具有表面紋理之壓力室量測結果，而第6B圖顯示，薄膜上表面具有表面紋理(施加表面粗糙加工)之壓力室量測結果。如第6A圖所示，在薄膜上表面並未具有表面紋理之情形下，在加熱期間以及冷卻期間有一些誤差出現於紅外線溫度計量測值與熱電偶薄膜上表面溫度量測值之間，因而繪出之結果呈現柔和曲線(gentle curves)。又如第6B圖所示，在薄膜上表面具有表面紋理之情形下，在加熱期間以及冷卻期間有一些誤差出現於紅外線溫度計量測值與熱電偶薄膜上表面溫度量測值之間，因而繪出之結果呈現柔和曲線。不過，在第6B圖中，由於誤差度較小，因而繪出之結果接近於一直線。依此方式，在未具有表面紋理之壓力室以及具有表面紋理之壓力室情形下，有一些誤差出現於紅外線溫度計薄膜溫度量測值與熱電偶薄膜溫度量測值之間，也因此誤差效應已被線性近似(linear approximation)所移除。具體而言，Figures 6A and 6B are graphs drawn using all of the time-series data shown in Figure 5, where the infrared temperature measurements are plotted on a horizontal axis and simultaneously measured by a thermocouple. The film upper surface temperature measurement is plotted on the vertical axis. Fig. 6A shows the pressure chamber measurement results without the surface texture on the upper surface of the film, and Fig. 6B shows the pressure chamber measurement results on the upper surface of the film having the surface texture (applying surface roughening). As shown in FIG. 6A, in the case where the upper surface of the film does not have a surface texture, some errors occur during heating and during cooling, which are between the infrared temperature measurement value and the upper surface temperature measurement value of the thermocouple film, and thus The resulting results show gentle curves. As shown in Fig. 6B, in the case where the upper surface of the film has a surface texture, some errors occur during the heating and during the cooling period between the infrared temperature measurement value and the upper surface temperature measurement value of the thermocouple film, thus The result is a soft curve. However, in Fig. 6B, since the degree of error is small, the result drawn is close to a straight line. In this way, in the case of a pressure chamber without a surface texture and a pressure chamber having a surface texture, some errors occur between the temperature measurement value of the infrared thermometer film and the temperature measurement value of the thermocouple film, and thus the error effect has been Removed by linear approximation. in particular,

熱電偶輸出值(薄膜溫度估算值)=係數a×紅外線溫度計量測值+係數b‧‧‧(1)Thermocouple output value (film temperature estimate) = coefficient a × infrared temperature measurement value + coefficient b‧‧‧(1)

藉著求取滿足方程式(1)關係之係數a及係數b，薄膜溫度即可藉著簡易線性回歸分析(simple linear regression analysis)而估算得出。在以下，藉著簡易線性回歸方程式估算得出之薄膜溫度估算值係簡稱紅外線溫度量測修正值(correction value of the infrared radiation thermometer measurement)。By finding the coefficient a and the coefficient b that satisfy the relationship of equation (1), the film temperature can be estimated by simple linear regression analysis. In the following, the estimated film temperature estimate by the simple linear regression equation is referred to as the correction value of the infrared radiation thermometer measurement.

第7A圖及第7B圖係各圖表中紅外線溫度計量測修正值係繪於水平軸線上，而同時由熱電偶所量測之薄膜上表面溫度量測值係繪於垂直軸線上。具體而言，第7A圖及第7B圖之圖表顯示在線性近似後，紅外線溫度計量測值之修正值以及熱電偶量測值間之關係。第7A圖顯示在薄膜上表面並未具有表面紋理之區域之結果，而第7B圖顯示在薄膜上表面具有表面紋理之區域之結果。In Figures 7A and 7B, the infrared temperature measurement correction values in the respective graphs are plotted on the horizontal axis, while the film upper surface temperature measurement values measured by the thermocouple are plotted on the vertical axis. Specifically, the graphs in FIGS. 7A and 7B show the relationship between the corrected value of the infrared temperature measurement value and the measured value of the thermocouple after the linear approximation. Fig. 7A shows the result of the area where the upper surface of the film does not have a surface texture, and Fig. 7B shows the result of the area having the surface texture on the upper surface of the film.

第7A圖顯示在強制加熱期間，紅外線溫度計所量測之薄膜溫度量測值之修正值係較低於實際上之熱電偶所量測之薄膜溫度量測值。具體而言，由於載具之溫度上升在強制加熱期間受到遲延，來自低溫載具所照射之紅外線反射在薄膜上，而所反射之紅外線入射於紅外線溫度計。職是，量測修正值低於實際上之薄膜溫度。相較而言，在強制冷卻期間，由紅外線溫度計所量測之薄膜溫度量測值之修正值則高於實際上之熱電偶所量測之薄膜溫度量測值。具體而言，由於載具之溫度下降在強制冷卻期間受到遲延，來自高溫載具所照射之紅外線從薄膜上反射，而所反射之紅外線入射於紅外線溫度計。因此，量測修正值高於實際上之薄膜溫度。Fig. 7A shows that during the forced heating, the correction value of the film temperature measurement measured by the infrared thermometer is lower than the film temperature measurement measured by the actual thermocouple. Specifically, since the temperature rise of the carrier is delayed during the forced heating, the infrared rays irradiated from the low temperature carrier are reflected on the film, and the reflected infrared rays are incident on the infrared thermometer. The job is to measure the correction value below the actual film temperature. In comparison, during the forced cooling, the correction value of the film temperature measurement measured by the infrared thermometer is higher than the film temperature measurement measured by the actual thermocouple. Specifically, since the temperature drop of the carrier is delayed during the forced cooling, the infrared rays irradiated from the high temperature carrier are reflected from the film, and the reflected infrared rays are incident on the infrared thermometer. Therefore, the measurement correction value is higher than the actual film temperature.

在第7B圖中，由於表面紋理係施加於薄膜上表面，自載具發射之紅外線係自薄膜之上表面擴散反射，也因此反射紅外線對紅外線溫度計之量測值影響較小。職是，在強制加熱期間以及強制冷卻期間，熱電偶實際上量測之薄膜溫度以及紅外線溫度計量測之薄膜溫度修正值通常是彼此一致。所以，可以確定的是，在施以表面紋理之薄膜上表面上，薄膜溫度可藉由紅外線溫度計以相當高準確度估算得出。In Fig. 7B, since the surface texture is applied to the upper surface of the film, the infrared rays emitted from the carrier are diffused and reflected from the upper surface of the film, and thus the reflected infrared rays have less influence on the measured value of the infrared thermometer. It is assumed that during the forced heating and forced cooling, the film temperature actually measured by the thermocouple and the film temperature correction measured by the infrared temperature are generally consistent with each other. Therefore, it can be confirmed that on the upper surface of the film to which the surface texture is applied, the film temperature can be estimated with a relatively high accuracy by an infrared thermometer.

如上所述，第7A圖及第7B圖顯示，特別是在薄膜上表面未施以表面紋理時，當射自載具之紅外線從薄膜上表面反射，而對紅外線溫度計量測值產生相當大的影響力時，無法從紅外線溫度計所量測出之修正值高準確度地估算薄膜溫度。依此方式，由於紅外線溫度計之量測值受到載具溫度之影響，薄膜溫度估算值係使用紅外線溫度計量測修正值以及載具溫度量測值，以多元線性回歸分析(multiple linear regression analysis)計算者。在此多元線性回歸分析計算極小化(熱電偶量測之薄膜溫度量測值-薄膜溫度估算值)2之回歸係數(regression coefficients)b0、b1及b2。具體而言，採用利用最小平方法(method of least squares)之多元線性回歸分析。As described above, Figures 7A and 7B show that, especially when the surface texture is not applied to the upper surface of the film, when the infrared rays from the carrier are reflected from the upper surface of the film, the infrared temperature measurement value is relatively large. At the time of influence, the film temperature cannot be estimated with high accuracy from the correction value measured by the infrared thermometer. In this way, since the measured value of the infrared thermometer is affected by the temperature of the carrier, the estimated temperature of the film is calculated by multiple linear regression analysis using the infrared temperature measurement correction value and the vehicle temperature measurement value. By. In this multiple linear regression analysis, the regression coefficients b 0 , b 1 and b 2 of the minimization (the temperature measurement of the thermocouple measurement - the film temperature estimate) 2 are calculated. Specifically, multiple linear regression analysis using method of least squares is employed.

(薄膜溫度估算值)=b0+b1×(紅外線溫度計量測修正值)+b2×(載具溫度量測值)‧‧‧方程式(2)(Thin film temperature estimation value) = b 0 + b 1 × (infrared temperature measurement correction value) + b 2 × (vehicle temperature measurement value) ‧ ‧ equation (2)

第8A圖及第8B圖各圖表中，在方程式(2)所代表之多元線性回歸分析在極小化(熱電偶量測之薄膜溫度量測值-薄膜溫度估算值)2之回歸係數(regression coefficients)b0、b1及b2，經應用實際量測值，予以計算之情形下，薄膜溫度估算值係繪於水平軸線上，而同時由熱電偶所量測之薄膜上表面溫度量測值則繪於垂直軸線上。第8A圖顯示薄膜上表面並未具有表面紋理之情形，而第8B圖顯示薄膜上表面具有表面紋理之情形。In the graphs of Fig. 8A and Fig. 8B, the regression coefficient (regression coefficients) of the multiple linear regression analysis represented by equation (2) in minimization (measurement of film temperature measurement of thermocouple measurement - film temperature estimation) 2 ) b 0 , b 1 and b 2 , the actual temperature measurement is used to calculate the film temperature estimation value is plotted on the horizontal axis, while the film upper surface temperature measurement measured by the thermocouple It is drawn on the vertical axis. Fig. 8A shows a case where the upper surface of the film does not have a surface texture, and Fig. 8B shows a case where the upper surface of the film has a surface texture.

如第8A圖及第8B圖所示，在利用多元線性回歸以估算薄膜溫度之情形下，薄膜估算值能夠與由電熱偶量測之實際薄膜分度量測值極為準確地一致。藉著事先將經計算之多元回歸係數儲存在研磨裝置內，薄膜溫度在研磨製成中即可高準確性地估算。此外，第8B圖顯示各估算值經由多元線性回歸分析利用第7B圖(其中表面紋理被施加於薄膜之上表面)所示數據之情形下所計算之結果。在第8B圖情形下之估算值，較之第7B圖所示之情形，能夠以較高準確度地與熱電偶量測之薄膜溫度實際量測值一致。具體而言，將載具溫度考慮進去之多元線性回歸分析，在施加表面紋理之區域亦屬有效。As shown in Figures 8A and 8B, in the case of using multiple linear regression to estimate the film temperature, the film estimate can be extremely accurately consistent with the actual film score measurements measured by the thermocouple. By storing the calculated multiple regression coefficients in the grinding device in advance, the film temperature can be estimated with high accuracy in the grinding process. Further, Fig. 8B shows the results of calculations in the case where the respective estimated values were subjected to multiple linear regression analysis using the data shown in Fig. 7B in which the surface texture was applied to the upper surface of the film. The estimated value in the case of Fig. 8B can be consistent with the actual measured value of the film temperature measured by the thermocouple with higher accuracy than the case shown in Fig. 7B. Specifically, multiple linear regression analysis that takes into account the temperature of the carrier is also effective in areas where surface texture is applied.

第9圖係顯示結果之一圖表，其中薄膜溫度係利用多元線性回歸方程式(multiple linear regression equation)自第5圖所示紅外線溫度計量測值以及載具溫度量測值所估算出者。在第9圖中，量測係在未有表面紋理之區域被執行者。自第9圖經確認，雖然在有些位置之紅外線溫度計量測修正值(其係利用第7A圖情形之線性近似(簡易線性回歸分析)所得出之修正值)不同於熱電偶所量測薄膜溫度之實際量測值，然而利用多元線性回歸方程式所得出之薄膜溫度估算值，係即為準確地與熱電偶量測之薄膜溫度實際量測值一致。Figure 9 is a graph showing the results, in which the film temperature is estimated from the multiple linear regression equation from the infrared temperature measurement shown in Figure 5 and the vehicle temperature measurement. In Fig. 9, the measurement system is executed in an area where there is no surface texture. It has been confirmed from Fig. 9 that although the infrared temperature measurement correction value at some positions (the correction value obtained by the linear approximation (simple linear regression analysis) of the case of Fig. 7A) is different from the film temperature measured by the thermocouple. The actual measured value, however, the estimated film temperature obtained by the multiple linear regression equation is consistent with the actual measured temperature of the film temperature measured by the thermocouple.

其次，以下將敘述利用薄膜溫度估算值，以估算晶圓溫度(基板溫度)之方法。第10圖係利用第5圖所示之所有時間序列數據所繪製之圖表，其中由薄膜溫度估算方程式所計算之薄膜溫度估算值係繪於水平軸線上，而同時由熱電偶所量測之晶圓下表面溫度量測值係繪於垂直軸線上。第10圖顯示在強制加熱期間，薄膜溫度估算值係低於熱電偶所量測之晶圓溫度實際量測值。相較而言，在強制冷卻期間，薄膜溫度估算值係高於熱電偶所量測之晶圓溫度實際量測值，此一現象將敘述於後。Next, a method of estimating the wafer temperature (substrate temperature) using the film temperature estimation value will be described below. Figure 10 is a graph drawn using all of the time series data shown in Figure 5, where the film temperature estimates calculated from the film temperature estimation equation are plotted on the horizontal axis while the crystal is measured by the thermocouple. The measurement of the temperature of the lower surface of the circle is plotted on the vertical axis. Figure 10 shows that during forced heating, the film temperature estimate is lower than the actual measured wafer temperature measured by the thermocouple. In comparison, during forced cooling, the film temperature estimate is higher than the actual measured wafer temperature measured by the thermocouple. This phenomenon will be described later.

薄膜溫度就熱平衡(thermal balance)之觀點而言，係受到晶圓溫度與載具溫度兩者所影響。薄膜溫度在強制加熱期間，因受到低溫載具之影響，而較低於晶圓溫度。相較而言，薄膜溫度在強制冷卻期間，因受到高溫載具之影響，而較高於晶圓溫度。The film temperature is affected by both the wafer temperature and the carrier temperature from the viewpoint of thermal balance. The film temperature is lower than the wafer temperature during forced heating due to the low temperature carrier. In comparison, the film temperature is higher than the wafer temperature during forced cooling due to the high temperature carrier.

在第10圖中，薄膜溫度估算值可藉由方程式(1)之簡易線性回歸分析而決定，且晶圓溫度估算值可藉由紅外線溫度計量測修正值，以簡易線性回歸分析而決定。而且在此情形下，尤其是在表面紋理施加於薄膜上表面之情形下，當射自載具之紅外線從薄膜上表面擴散地反射時，晶圓溫度可以高準確性地估算。晶圓溫度某些程度的估算，可經由簡易線性回歸分析，利用薄膜溫度估算值而達成。為了高準確性地估算晶圓溫度，可利用薄膜溫度及載具溫度藉由多元線性回歸方程式而計算晶圓溫度，俾高準確性地計算出估算值。而且，在此一多元線性回歸分析中，極小化(熱電偶量測之晶圓溫度量測值-晶圓溫度估算值)2之回歸係數b0、b1及b2被予以計算。具體而言，採用利用最小平方法之多元線性回歸分析。In Figure 10, the film temperature estimate can be determined by simple linear regression analysis of equation (1), and the wafer temperature estimate can be determined by simple linear regression analysis by infrared temperature measurement correction. Also in this case, especially in the case where the surface texture is applied to the upper surface of the film, when the infrared rays incident from the carrier are diffusely reflected from the upper surface of the film, the wafer temperature can be estimated with high accuracy. Some estimates of wafer temperature can be achieved by simple linear regression analysis using film temperature estimates. In order to estimate the wafer temperature with high accuracy, the film temperature can be calculated by the multiple linear regression equation using the film temperature and the carrier temperature, and the estimated value can be calculated with high accuracy. Moreover, in this multiple linear regression analysis, the regression coefficients b 0 , b 1 and b 2 of the minimization (the wafer temperature measurement of the thermocouple measurement - the wafer temperature estimation value) 2 are calculated. Specifically, multiple linear regression analysis using the least squares method is employed.

(晶圓溫度估算值)=b0+b1×(薄膜溫度估算值)+b2×(載具溫度量測值)‧‧‧方程式(3)(wafer temperature estimate) = b 0 + b 1 × (film temperature estimate) + b 2 × (vehicle temperature measurement) ‧ ‧ equation (3)

第11圖係一圖表，其中，在應用實際量測值以方程式(3)計算極小化(熱電偶量測之晶圓溫度量測值-晶圓溫度估算值)2之回歸係數b0、b1及b2之情形下，晶圓溫度量測值係繪於水平軸線上，而同時由熱電偶所量測之晶圓下表面溫度量測係繪於垂直軸線上。在利用多元線性回歸方程式(3)以估算晶圓溫度之情形下，晶圓溫度估算值，與熱電偶量測晶圓下表面溫度之實際量測值極高準確地一致。Figure 11 is a graph in which the regression coefficient b 0 , b is calculated by applying the actual measurement value to the minimum of the equation (3) (the wafer temperature measurement value of the thermocouple measurement - the wafer temperature estimation value) 2 In the case of 1 and b 2 , the wafer temperature measurement is plotted on the horizontal axis, while the wafer lower surface temperature measurement measured by the thermocouple is plotted on the vertical axis. In the case of using the multiple linear regression equation (3) to estimate the wafer temperature, the wafer temperature estimate is extremely accurately consistent with the actual measured value of the lower surface temperature of the thermocouple measurement wafer.

第12圖係顯示結果之一圖表，其中晶圓溫度係利用多元線性回歸方程式自第5圖所示紅外線溫度計量測值以及載具溫度量測值所估算出者。經確定者為，利用多元線性回歸方程式所得出之晶圓溫度估算值，極高準確地與熱電偶量測晶圓下表面溫度之實際量測值一致。藉著事先將經計算之多元回歸係數儲存在研磨裝置內，晶圓溫度在研磨製成中即可以高準確地估算。在如第4圖所示之用以決定多元回歸係數之初期實驗中，應將壓力室以實際上研磨作業之壓力施加壓力。再者，在實際研磨(實際執行研磨作業)於執行某些壓力條件之情形下，可事先在每個壓力條件下計算多元回歸係數，且可在實際研磨期間，根據壓力條件而選擇性地利用多元回歸係數。在本實施例中係執行合併載具溫度(作為基板固持裝置(頂環)之溫度)之多元線性回歸分析。為了高準確性地計算溫度估算值，應採用載具面對薄膜之部分之溫度。不過，亦可不用載具之溫度，而用基板固持裝置之其它部分(元件)之溫度。在此情形下，如果使用與載具連接之元件之溫度，將可較高準確地計算溫度估算值。Figure 12 is a graph showing the results, in which the wafer temperature is estimated from the infrared temperature measurement measured in Figure 5 and the measured temperature of the vehicle using a multiple linear regression equation. It is determined that the estimated wafer temperature obtained by using the multiple linear regression equation is extremely accurately consistent with the actual measured value of the lower surface temperature of the thermocouple measurement wafer. By storing the calculated multiple regression coefficients in the grinding device in advance, the wafer temperature can be estimated with high accuracy in the grinding process. In the initial experiment to determine the multiple regression coefficients as shown in Fig. 4, the pressure chamber should be pressurized with the pressure of the actual grinding operation. Furthermore, in the case of actual grinding (actually performing the grinding operation) under certain pressure conditions, the multiple regression coefficients can be calculated in advance under each pressure condition, and can be selectively utilized according to the pressure conditions during the actual grinding. Multiple regression coefficients. In this embodiment, a multiple linear regression analysis of the combined carrier temperature (as the temperature of the substrate holding device (top ring)) is performed. In order to calculate the temperature estimate with high accuracy, the temperature of the part of the carrier facing the film should be used. However, the temperature of the other parts (components) of the device may be held by the substrate without using the temperature of the carrier. In this case, if the temperature of the component connected to the carrier is used, the temperature estimate can be calculated with higher accuracy.

第13圖係顯示根據本發明研磨裝置之一態樣所執行，藉著自紅外線溫度計量測值及載具溫度量測值所估算出晶圓溫度(基板溫度)，以供決定各研磨條件等加工條件之製程之一流程圖。Figure 13 is a view showing the wafer temperature (substrate temperature) estimated from the infrared temperature measurement value and the carrier temperature measurement value in accordance with one aspect of the polishing apparatus of the present invention for determining the polishing conditions, etc. A flow chart of the process of processing conditions.

如第13圖所示，事先實施估算方程式之數據採集和計算，具體而言，如第4圖所示之情形，晶圓下方表面之溫度係由熱電偶51所量測，薄膜上表面溫度則由熱電偶49所量測，紅外線溫度係由紅外線溫度計45所量測，而載具之溫度則由熱電偶48所量測者。再者，使用這些所量測之數值計算估算方程式。在此情形下，視需要同樣地計算複數個壓力室內之估算方程式。紅外線溫度計量測值係與非接觸型熱電偶所得出之量測值作比較，而修正紅外線溫度計量測值之斜率，以及紅外線溫度計量測值與非接觸型熱電偶所得出之量測值間之誤差。然後，由使用紅外線溫度計量測修正值以及載具溫度量測值之多元線性回歸分析計算薄膜溫度估算方程式。隨後，由使用薄膜溫度估算值以及載具溫度量測值之多元線性回歸分析計算晶圓溫度估算方程式。之後，經計算之晶圓溫度估算方程式即儲存在研磨裝置中。As shown in Fig. 13, the data acquisition and calculation of the estimation equation are carried out in advance. Specifically, as shown in Fig. 4, the temperature of the lower surface of the wafer is measured by the thermocouple 51, and the upper surface temperature of the film is as measured. Measured by thermocouple 49, the infrared temperature is measured by infrared thermometer 45, and the temperature of the carrier is measured by thermocouple 48. Again, the estimated equations are calculated using these measured values. In this case, the estimation equations of the plurality of pressure chambers are equally calculated as needed. The infrared temperature measurement value is compared with the measured value obtained by the non-contact type thermocouple, and the slope of the infrared temperature measurement value is corrected, and the infrared temperature measurement value and the measurement value obtained by the non-contact type thermocouple are used. The error. Then, the film temperature estimation equation is calculated from a multiple linear regression analysis using the infrared temperature measurement correction value and the vehicle temperature measurement value. The wafer temperature estimation equation is then calculated from a multiple linear regression analysis using film temperature estimates and vehicle temperature measurements. The calculated wafer temperature estimation equation is then stored in the grinding apparatus.

在實際研磨期間，研磨期間之紅外線溫度計量測值以及載具溫度量測值，被替換成上述之晶圓溫度估算方程式，而計算該晶圓溫度估算值。如有需要，可利用在研磨期間所計算之晶圓溫度估算值以改變研磨條件。During the actual grinding, the infrared temperature measurement value and the carrier temperature measurement value during the grinding are replaced with the above wafer temperature estimation equation, and the wafer temperature estimation value is calculated. If necessary, the wafer temperature estimate calculated during the grinding can be utilized to change the grinding conditions.

其次，在前述「發明內容」中所解說之薄膜結露問題將敘述於後。薄膜結露會降低溫度量測之準確度，或使供給至晶圓之壓力不穩定。Next, the problem of film condensation explained in the above "Summary of the Invention" will be described later. Film condensation can reduce the accuracy of temperature measurements or make the pressure supplied to the wafer unstable.

第14A圖係第2圖之XIV部分之放大圖，如第14A圖所示，閥V1-3能夠與大氣連通，當與壓力室連通之通道(例如中心室)係自真空狀態轉換至釋壓至大氣壓力狀態時，在置放有研磨裝置之大氣中之空氣進入閥V1-3，而使該壓力室暴露於大氣壓力中。在此時，含有水份之空氣進入該壓力室，由於在該壓力室內之重複地溫升與溫降而在該薄膜上發生結露現象。同樣地，對於對應於其它壓力室之閥V2-3及類似者亦同(例如波紋室6)。當結露發生在壓力室之薄膜並在薄膜表面上產生水滴時，射自具有水滴部分之紅外線量與該部份並無水滴時之紅外線發射量是有改變的。職是，薄膜溫度無法被準確地量測。再者，當因結露所引起之水滴數量增加時，累積在壓力室之水量改變了施加於該晶圓之壓力，也因此無法穩定地進行研磨作業。Figure 14A is an enlarged view of the XIV portion of Fig. 2, as shown in Fig. 14A, the valve V1-3 can communicate with the atmosphere, and the passage (e.g., the central chamber) that communicates with the pressure chamber is switched from the vacuum state to the pressure relief. At the atmospheric pressure state, air in the atmosphere in which the grinding device is placed enters the valve V1-3, and the pressure chamber is exposed to atmospheric pressure. At this time, the moisture-containing air enters the pressure chamber, and dew condensation occurs on the film due to repeated temperature rise and temperature drop in the pressure chamber. Similarly, the same applies to the valve V2-3 and the like corresponding to the other pressure chambers (for example, the corrugated chamber 6). When dew condensation occurs in the film of the pressure chamber and water droplets are generated on the surface of the film, the amount of infrared radiation emitted from the portion having the amount of water droplets and the portion having no water droplets is changed. At the job, the film temperature cannot be accurately measured. Further, when the number of water droplets caused by condensation increases, the amount of water accumulated in the pressure chamber changes the pressure applied to the wafer, and thus the polishing operation cannot be performed stably.

為了避免含有水份之空氣進入壓力室，當壓力室之壓力自真空狀態增至大氣壓力狀態時，即供應大氣壓力之氮氣N2(乾氣體)。亦可使用除了氮氣以外而未含有水份之乾空氣。在此情形下，乾空氣係指一氣體源在大氣壓力下之露點溫度(dew-point temperature)不超過20℃者。通常，用以清洗頂環之去離子水(純水)之溫度大約20℃，而若使用露點溫度不超過20℃之氣體，則縱然氣體被冷卻至大約20℃，結露現象亦不會發生。該乾空氣較佳者為一惰性氣體。In order to prevent the moisture-containing air from entering the pressure chamber, when the pressure of the pressure chamber is increased from the vacuum state to the atmospheric pressure state, the nitrogen pressure N 2 (dry gas) of the atmospheric pressure is supplied. Dry air other than nitrogen but not containing moisture can also be used. In this case, dry air refers to a gas source whose dew-point temperature does not exceed 20 ° C under atmospheric pressure. Usually, the temperature of the deionized water (pure water) used to clean the top ring is about 20 ° C, and if the gas having a dew point temperature of not more than 20 ° C is used, the condensation does not occur even if the gas is cooled to about 20 ° C. The dry air is preferably an inert gas.

第14B圖係一視圖顯示一供給具有大氣壓力之氮氣至該壓力室之管路系統，如第14B圖所示，該閥V1-3經由一調節器或壓力控制器55而連接至一加壓之氮氣源56。該調節器或壓力控制器55將供給至該受壓氮氣源56之氮氣予以解壓。依此方式，為了供給大氣壓力之氮氣至該壓力室，該加壓之氮氣可藉由該調節器(解壓閥(decompression valve))或壓力控制器予以解壓。相較而言，當該壓力室經解壓而從加壓狀態至大氣壓力狀態時，與該壓力室連通之閥V1-3即被打開，而該加壓氣體自該調節器之釋壓閥排出且經解壓。因此，避免含有水份之空氣進入通道。此外，亦可提供一容器以便儲存大氣壓力氮氣，且該大氣壓力氮氣可從該容器供給至該壓力室，俾提高對於大氣壓力改變之響應度。根據本發明，該與壓力室連通之通道僅連接至與放置有該研磨裝置之大氣隔離之氣體源。具體而言，由於該與壓力室連通之通道經建構為不與放置有該研磨裝置之大氣連接，含有水分之空氣即不會進入壓力室，俾避免壓力室中出現結露之情形。Figure 14B is a view showing a piping system for supplying nitrogen gas having atmospheric pressure to the pressure chamber. As shown in Fig. 14B, the valve V1-3 is connected to a pressurization via a regulator or pressure controller 55. Nitrogen source 56. The regulator or pressure controller 55 decompresses the nitrogen supplied to the pressurized nitrogen source 56. In this manner, in order to supply atmospheric pressure nitrogen to the pressure chamber, the pressurized nitrogen gas can be decompressed by the regulator (decompression valve) or pressure controller. In comparison, when the pressure chamber is decompressed from the pressurized state to the atmospheric pressure state, the valve V1-3 communicating with the pressure chamber is opened, and the pressurized gas is discharged from the pressure relief valve of the regulator. And decompressed. Therefore, air containing moisture is prevented from entering the passage. In addition, a container may be provided for storing atmospheric pressure nitrogen gas, and the atmospheric pressure nitrogen gas may be supplied from the vessel to the pressure chamber to increase the responsiveness to changes in atmospheric pressure. According to the invention, the passage in communication with the pressure chamber is only connected to a source of gas that is isolated from the atmosphere in which the grinding device is placed. Specifically, since the passage communicating with the pressure chamber is constructed so as not to be connected to the atmosphere in which the grinding device is placed, the moisture-containing air does not enter the pressure chamber, and condensation is prevented from occurring in the pressure chamber.

而且，在如第2圖所示之乾氣體源並未設置之態樣中，可將一水份去除裝置(water content removing device)設置於與壓力室連通且安裝有紅外線溫度計之各通道(在實施例2中之通道21、22、23及24或通道11、12、13及14)內，因而能夠供給露點溫度未超出20℃之氣體至每一壓力室。就該水份移除裝置而言，吸水性材料例如矽膠(silica gel)或吸水性聚合物(water absorptive polymer)設於通道內，且吸水性材料係與更換薄膜或類似者同時被更換。就其它方式而言，為了防止在壓力室側不會出現結露之情形，經考慮薄膜本身以一高熱絕緣薄膜製造或使用溫水清洗該頂環，因而避免薄膜溫度降低。Moreover, in the aspect in which the dry gas source as shown in FIG. 2 is not provided, a water content removing device may be disposed in each channel that communicates with the pressure chamber and is equipped with an infrared thermometer (at In the channels 21, 22, 23 and 24 or the channels 11, 12, 13 and 14) in the embodiment 2, it is thus possible to supply a gas having a dew point temperature not exceeding 20 ° C to each pressure chamber. In the case of the moisture removing device, a water-absorbent material such as silica gel or water absorptive polymer is provided in the passage, and the water-absorbent material is replaced at the same time as the replacement film or the like. In other respects, in order to prevent condensation from occurring on the pressure chamber side, it is considered that the film itself is manufactured by using a high heat insulating film or using warm water to wash the top ring, thereby avoiding a decrease in film temperature.

其次，接著說明第3圖所示之數據接收單元47如後。如第3圖所示，該數據接收單元47係安裝於在研磨程序期間一直滾動之頂環1中，而因此有必要傳輸訊號於滾動部分與靜止部份之間，以作為研磨裝置之控制器與該數據接收單元47間之訊號傳輸。為了此訊號傳輸，可使用一滑環(slip ring)、或例如電波通信之無線電通信、或光通信(未示)。根據本實施例，由紅外線溫度計45或熱電偶48所量測之訊號，由該類比-至-數位轉換器，而所量測之溫度則經由該冷端溫度感測單元46之類比-至-數位轉換器轉換成數位訊號，隨後該等數位訊號即輸送至一數據接收單元47。接著，該等數位訊號自數據接收單元47即傳輸至研磨裝置之控制器50(參照第1圖)，也因此本系統是並不會受到滑環或是無線電通信所產生噪音之影響。滑環可用做供電至數據接收單元47、或使用線圈或類似物以做為非接觸性供電至數據接收單元47。此外，可於該頂環1內設一可充電式電池以便提供電力。在此情形下，剩餘電池電量可由研磨裝置之控制器50予以辨認，且當剩餘電池電量低時，可從該研磨器發出警示聲，而提醒更換電池者。Next, the data receiving unit 47 shown in Fig. 3 will be described later. As shown in Fig. 3, the data receiving unit 47 is mounted in the top ring 1 which is scrolled during the grinding process, and therefore it is necessary to transmit a signal between the rolling portion and the stationary portion as a controller of the grinding device. Signal transmission with the data receiving unit 47. For this signal transmission, a slip ring, or radio communication such as radio wave communication, or optical communication (not shown) may be used. According to this embodiment, the signal measured by the infrared thermometer 45 or the thermocouple 48 is measured by the analog-to-digital converter, and the measured temperature is analogized by the cold junction temperature sensing unit 46-to- The digital converter converts into a digital signal, which is then sent to a data receiving unit 47. Then, the digital signals are transmitted from the data receiving unit 47 to the controller 50 of the polishing apparatus (refer to FIG. 1), and therefore the system is not affected by the noise generated by the slip ring or the radio communication. The slip ring can be used to supply power to the data receiving unit 47, or to use a coil or the like as a non-contact power supply to the data receiving unit 47. In addition, a rechargeable battery can be disposed in the top ring 1 to provide power. In this case, the remaining battery power can be recognized by the controller 50 of the grinding device, and when the remaining battery power is low, a warning sound can be issued from the grinder to remind the battery replacement person.

接著將敘述控制壓力室溫度之方法。第15圖係該頂環之一剖面示意圖，該頂環具有可執行壓力室溫度控制之結構。在第15圖中，省略該紅外線溫度計以及在第3圖所描述之一些元件。如第15圖所示，第一壓力控制器60-1與第二壓力控制器60-2偶合至一壓力室(例如該中心室5)，設有壓力感測器61以監控在壓力室(中心室5)內之壓力。第一壓力控制器60-1與第二壓力控制器60-2在研磨開始時係設定於相同之控制壓力。當研磨製程期間晶圓溫度估算值超出預定溫度時，第一壓力控制器60-1與一第二壓力控制器60-2其中一者之預定值即被降低。舉例而言，在研磨開始時，第一壓力控制器60-1與第二壓力控制器60-2兩者將一流體加壓至一200 hPa之設定值，加壓期間將晶圓加壓到200 hPa。當晶圓溫度估算值超出預定溫度時，第二壓力控制器60-2之設定壓力被降低為180 hPa，而第一壓力控制器60-1之設定壓力則維持在200 hPa。在此情形下，加壓流體自與第一壓力控制器60-1連通之流體通道朝著與第二壓力控制器60-2連通之流體通道流動。此加壓流體之流動冷卻了壓力室(中心室5)之內部溫度。此外，在冷卻期間壓力室之壓力係受到該壓力感測器61所監控，當壓力室內之壓力下降至遠低於200 hPa時，該第二壓力控制器60-2之設定壓力增加，因而在壓力室中即產生所需之壓力。Next, a method of controlling the temperature of the pressure chamber will be described. Figure 15 is a schematic cross-sectional view of the top ring having a structure for performing temperature control of the pressure chamber. In Fig. 15, the infrared thermometer and some of the elements described in Fig. 3 are omitted. As shown in Fig. 15, the first pressure controller 60-1 and the second pressure controller 60-2 are coupled to a pressure chamber (e.g., the center chamber 5), and a pressure sensor 61 is provided to monitor the pressure chamber ( The pressure inside the central chamber 5). The first pressure controller 60-1 and the second pressure controller 60-2 are set at the same control pressure at the start of the grinding. When the wafer temperature estimate exceeds a predetermined temperature during the polishing process, the predetermined value of one of the first pressure controller 60-1 and a second pressure controller 60-2 is lowered. For example, at the beginning of the grinding, both the first pressure controller 60-1 and the second pressure controller 60-2 pressurize a fluid to a set value of 200 hPa, and pressurize the wafer during pressurization to 200 hPa. When the wafer temperature estimate exceeds the predetermined temperature, the set pressure of the second pressure controller 60-2 is lowered to 180 hPa, and the set pressure of the first pressure controller 60-1 is maintained at 200 hPa. In this case, the pressurized fluid flows from the fluid passage in communication with the first pressure controller 60-1 toward the fluid passage in communication with the second pressure controller 60-2. The flow of this pressurized fluid cools the internal temperature of the pressure chamber (central chamber 5). In addition, the pressure of the pressure chamber during cooling is monitored by the pressure sensor 61, and when the pressure in the pressure chamber drops far below 200 hPa, the set pressure of the second pressure controller 60-2 increases, thus The required pressure is created in the pressure chamber.

為了進一步改善壓力室內之冷卻效果，最好是進一步降低第二壓力控制器60-2之設定壓力，俾增加流經壓力室之加壓流體流率。該加壓流體可具有一受控溫度，例如，具有低溫之加壓流體可用來進一步改善該冷卻效果。另外，亦可使用具有高溫之加壓流體，例如，當晶圓溫度估算值不多於該預定溫度時，可使高溫加壓流體流過壓力室，因而增加晶圓之溫度。亦可使用低溫加壓流體與高溫加壓流體之組合，例如，當晶圓溫度在研磨起始階段之低溫時，使高溫加壓流體流經壓力室，因而加速晶圓溫度之增加，而當研磨期間晶圓溫度變得較高時，使具有低溫或通常溫度之加壓流體流經壓力室，因而抑制了晶圓溫度之增加。供壓抵晶圓之薄膜可經構形以便界定複數個壓力室，並使晶圓溫度在各壓力室中被估算並控制。另外，晶圓溫度可在其中一壓力室中被估算，並利用此估算溫度執行溫度之控制。再者，由於該壓力感測器61具有溫度特性，壓力感測器61之量測值可利用載具43之溫度量測結果而獲得補償。In order to further improve the cooling effect in the pressure chamber, it is preferable to further reduce the set pressure of the second pressure controller 60-2 to increase the flow rate of the pressurized fluid flowing through the pressure chamber. The pressurized fluid can have a controlled temperature, for example, a pressurized fluid having a low temperature can be used to further improve the cooling effect. Alternatively, a pressurized fluid having a high temperature may be used. For example, when the wafer temperature estimate is not more than the predetermined temperature, the high temperature pressurized fluid may flow through the pressure chamber, thereby increasing the temperature of the wafer. A combination of a low temperature pressurized fluid and a high temperature pressurized fluid may also be used, for example, when the wafer temperature is at a low temperature in the initial stage of the grinding, the high temperature pressurized fluid flows through the pressure chamber, thereby accelerating the increase in the wafer temperature. When the wafer temperature becomes higher during the grinding, the pressurized fluid having a low temperature or a normal temperature is caused to flow through the pressure chamber, thereby suppressing an increase in the wafer temperature. The film that is pressed against the wafer can be configured to define a plurality of pressure chambers and the wafer temperature is estimated and controlled in each pressure chamber. In addition, the wafer temperature can be estimated in one of the pressure chambers, and the temperature is controlled using this estimated temperature. Moreover, since the pressure sensor 61 has a temperature characteristic, the measured value of the pressure sensor 61 can be compensated by the temperature measurement result of the carrier 43.

晶圓溫度估算值被進一步用來改變各種研磨條件，當研磨期間相對應於一壓力室(例如該中心室5)部分之晶圓溫度估算值高於相對應於另一壓力室(例如該波紋室6)部分之晶圓溫度估算值時，使該一壓力室(中心室5)之壓力下降，因而壓抑著溫度之上升；或是使該另一壓力室(波紋室6)之壓力增加，因而加速著在該另一壓力室(波紋室6)之溫度之上升。再者，研磨表面101a之冷卻與加熱裝置(設於該基板固持裝置外側)可用來控制整個研磨表面101a之溫度，或可用來控制相對應於該被量測溫度之壓力室部分之研磨表面101a之溫度。供控制研磨表面之溫度控制裝置之各範例包括一經構形為可使一媒介物與研磨表面接觸以控制其溫度之裝置者，以及一經構形以將一流體吹至研磨表面上之裝置者。為了控制研磨溫度，可將控制環(參照第1圖)之壓迫力變、或將整修條件(dressing conditions)(例如整修負荷(dressing load)以及掃描速度)在研磨表面相對應於溫度經量測之壓力室之部分可予以改變，俾加速或抑制該研磨製程。當執行原位整修(In-situ dressing)(即在研磨期間所執行之整修作業)時或執行異位整修(ex-situ dressing)(即在研磨過後所執行之整修作業)時，可改變整修條件。可為了溫度控制而改變研磨漿之流率，而使用溫度量測結果可改變研磨漿之落下位置，亦可使用此等溫度控制裝置之組合。此外，亦可量測該研磨表面之溫度，且可利用研磨表面之溫度量測結果以及晶圓之溫度量測結果以執行上述之溫度控制。The wafer temperature estimate is further used to vary various polishing conditions when the wafer temperature estimate corresponding to a portion of a pressure chamber (eg, the central chamber 5) during polishing is higher than corresponding to another pressure chamber (eg, the ripple Comparing the wafer temperature estimate of part 6), the pressure of the one pressure chamber (central chamber 5) is lowered, thereby suppressing the temperature rise; or the pressure of the other pressure chamber (corrugation chamber 6) is increased, Thus, the temperature rise in the other pressure chamber (corrugation chamber 6) is accelerated. Furthermore, the cooling and heating means (provided outside the substrate holding means) of the grinding surface 101a can be used to control the temperature of the entire grinding surface 101a, or can be used to control the grinding surface 101a corresponding to the pressure chamber portion of the measured temperature. The temperature. Examples of temperature control devices for controlling the abrasive surface include those configured to contact a media with the abrasive surface to control its temperature, and a device configured to blow a fluid onto the abrasive surface. In order to control the grinding temperature, the pressing force of the control ring (refer to Fig. 1) can be changed, or the wearing conditions (such as the dressing load and the scanning speed) can be measured on the grinding surface corresponding to the temperature. Portions of the pressure chamber can be modified to accelerate or inhibit the grinding process. Renovation can be changed when performing in-situ dressing (ie, finishing work performed during grinding) or performing ex-situ dressing (ie, finishing work performed after grinding) condition. The flow rate of the slurry can be changed for temperature control, and the temperature measurement result can change the falling position of the slurry, and a combination of these temperature control devices can also be used. In addition, the temperature of the polishing surface can also be measured, and the temperature measurement result of the polishing surface and the temperature measurement result of the wafer can be utilized to perform the above temperature control.

其次，參照第16圖至第21圖說明上述研磨表面之溫度控制裝置之各具體範例。Next, specific examples of the temperature control device for the above-mentioned polishing surface will be described with reference to Figs. 16 to 21 .

第16圖係一平面示意圖，顯示一供給研磨漿(研磨液)之研磨液供給噴嘴、該研磨墊、以及該頂環之配置。如第16圖所示，該研磨液供給噴嘴102係設置於該研磨台100之上方，因此該研磨液供給噴嘴102使研磨漿落下(或供給)於研磨台100上之研磨墊101上之預定位置上。該研磨液供給噴嘴102之噴嘴部分之尖端係鄰近於該頂環1。Figure 16 is a plan view showing a configuration of a slurry supply nozzle for supplying a slurry (grinding liquid), the polishing pad, and the top ring. As shown in Fig. 16, the polishing liquid supply nozzle 102 is disposed above the polishing table 100, so that the polishing liquid supply nozzle 102 causes the polishing slurry to fall (or be supplied) to the polishing pad 101 on the polishing table 100. Location. The tip end of the nozzle portion of the slurry supply nozzle 102 is adjacent to the top ring 1.

第17圖係一平面示意圖，顯示該研磨墊之溫度控制裝置範例，在第17圖所示之範例中，當晶圓溫度高時，使經冷卻媒介物冷卻過之研磨墊溫度控制裝置70與該研磨墊101接觸，因而將該研磨墊101(亦即冷卻表面)予以冷卻。Figure 17 is a plan view showing an example of the temperature control device of the polishing pad. In the example shown in Figure 17, when the wafer temperature is high, the polishing pad temperature control device 70 is cooled by the cooling medium. The polishing pad 101 is in contact, thereby cooling the polishing pad 101 (i.e., the cooling surface).

第18圖係一平面示意圖，顯示該研磨墊之另一溫度控制裝置範例。在第18圖所示之範例中，該研磨墊溫度控制裝置70將研磨墊101位於相對應該晶圓之高溫部分(例如晶圓之中央部位)強烈地予以冷卻。具體而言，強烈地降溫是由該研磨墊溫度控制裝置70之中央部份所執行，以便冷卻研磨墊101相對應於該晶圓中央部位之部分。同時，較弱之冷卻亦由該研磨墊溫度控制裝置70之兩側部分所執行，以便冷卻該研磨墊101對應於該晶圓其它部位之部分，否則若該部分不被冷卻則會被加熱。Figure 18 is a plan view showing an example of another temperature control device for the polishing pad. In the example shown in Fig. 18, the polishing pad temperature control device 70 strongly cools the polishing pad 101 at a high temperature portion (e.g., a central portion of the wafer) corresponding to the wafer. Specifically, the intense cooling is performed by the central portion of the polishing pad temperature control device 70 to cool the portion of the polishing pad 101 corresponding to the central portion of the wafer. At the same time, the weaker cooling is also performed by the two sides of the polishing pad temperature control device 70 to cool the portion of the polishing pad 101 corresponding to other portions of the wafer that would otherwise be heated if the portion is not cooled.

第19圖係一平面示意圖，顯示整修負荷(dress load)以及/或該掃瞄速度被改變之範例。如第19圖所示，設有一盤形整修器(dresser)80，用以整修該研磨台100上之研磨墊101。在整修期間，該整修器80受一預定之整修負荷壓擠於該研磨墊101上。再者，該整修器80可由一水平延伸擺動軸81擺動於一整修器掃描範圍內。當該晶圓中央部位之溫度高(或低)時，使整修該研磨墊相對應該晶圓高溫部位(或低溫部位)之部分之整修負荷減少(或增加)，因而調整研磨墊之研磨性能。當該晶圓中央部位之溫度高(或低)時，使整修該研磨墊相對應該晶圓高溫部位(或低溫部位)之部分之掃描速度減少(或增加)，因而調整研磨墊之研磨性能。當研磨期間所執行整修過程之原位整修時，整修條件可予以改變，或當研磨過後所執行整修過程之異位整修時，整修條件可予以改變。Figure 19 is a plan view showing an example of a dress load and/or a change in the scan speed. As shown in Fig. 19, a dish-shaped dresser 80 is provided for refurbishing the polishing pad 101 on the polishing table 100. During the refurbishment, the dresser 80 is pressed onto the polishing pad 101 by a predetermined finishing load. Furthermore, the dresser 80 can be swung by a horizontally extending swing axis 81 within a scan range of a dresser. When the temperature of the central portion of the wafer is high (or low), the repairing load of the polishing pad corresponding to the portion of the high temperature portion (or low temperature portion) of the wafer is reduced (or increased), thereby adjusting the polishing performance of the polishing pad. When the temperature of the central portion of the wafer is high (or low), the scanning speed of the polishing pad corresponding to the portion of the high temperature portion (or low temperature portion) of the wafer is reduced (or increased), thereby adjusting the polishing performance of the polishing pad. The refurbishment conditions may be changed during the in-situ refurbishment of the refurbishment process performed during grinding, or the refurbishment conditions may be changed when the retreading of the refurbishment process is performed after grinding.

第20圖係一平面示意圖，顯示一根據晶圓溫度而改變研磨漿落下位置之範例。如第20圖所示，當晶圓中央部位之溫度高時，該研磨液供給噴嘴102之角度改變，因此研磨漿之落下位置即在該研磨墊上所描繪之軌線(Lc)上。Figure 20 is a plan view showing an example of changing the position at which the slurry falls depending on the temperature of the wafer. As shown in Fig. 20, when the temperature at the central portion of the wafer is high, the angle of the slurry supply nozzle 102 is changed, so that the falling position of the slurry is on the trajectory (Lc) drawn on the polishing pad.

第21圖係顯示該研磨墊之溫度(分佈)量測係與晶圓溫度量測同時進行，而溫度控制係基於所量測之結果而執行時之範例之平面示意圖。在第21圖所示之範例中，有複數個紅外線溫度計82設於該研磨台100之上方，而此等紅外線溫度計82之位置係在該研磨台100上而遠離該研磨墊101。該研磨墊101之研磨表面溫度係由該等複數個紅外線溫度計82所量測，因而該研磨表面之溫度分布得以量測。隨後，利用該晶圓溫度之估算結果以及該研磨表面溫度之量測結果執行該晶圓之溫度控制。Figure 21 is a plan view showing an example of the temperature (distribution) measurement of the polishing pad simultaneously with the wafer temperature measurement, and the temperature control is performed based on the measured results. In the example shown in Fig. 21, a plurality of infrared thermometers 82 are disposed above the polishing table 100, and the positions of the infrared thermometers 82 are located on the polishing table 100 away from the polishing pad 101. The polishing surface temperature of the polishing pad 101 is measured by the plurality of infrared thermometers 82, and thus the temperature distribution of the polishing surface is measured. Subsequently, the temperature control of the wafer is performed using the estimation result of the wafer temperature and the measurement result of the polishing surface temperature.

除了第16圖至第21圖所示之實施例外，可利用該晶圓溫度之估算值(亦即該基板溫度之估算值)以及嵌入於該研磨台並經構形以量測該晶圓研磨表面之感測器(例如光學式或渦流式(eddy current type))所獲致之資訊兩者之組合，以改變研磨條件。舉例而言，當研磨期間由渦流式感測器所監控之膜厚度之經時變化較緩慢於其它區域時，且當晶圓中央部位之溫度估算值高時，該溫度控制裝置即受到控制，因而降低了晶圓中央部位之溫度，此為當研磨過程中，溫度上升超過某一數值時之抑制情形。根據過程中之情形，可以組合各種形式之控制方法。較佳者為，界定量測薄膜溫度之壓力室之薄膜之晶圓接觸表面並無開口(例如孔)。此乃因孔容許在該基板固持裝置之清洗操作中使清潔液進入薄膜之上表面側，而降低薄膜溫度量測之準確度。然而在設有一開口(例如孔)之情形時，較佳者為可在該基板固持裝置之清洗操作期間，將一氣體(例如氮氣)自載具側排至薄膜溫度量測區域，而移除水滴。In addition to the implementations shown in Figures 16 through 21, an estimate of the wafer temperature (i.e., an estimate of the substrate temperature) can be utilized and embedded in the polishing table and configured to measure the wafer polishing. The combination of the information obtained by the surface sensor (eg, optical or eddy current type) to change the grinding conditions. For example, when the film thickness monitored by the eddy current sensor during the polishing changes slowly over other regions, and when the temperature estimation value of the central portion of the wafer is high, the temperature control device is controlled. Thus, the temperature at the center of the wafer is lowered, which is a suppression when the temperature rises above a certain value during the grinding process. Various forms of control methods can be combined depending on the circumstances of the process. Preferably, the wafer contact surface of the film defining the pressure chamber for measuring the temperature of the film has no openings (e.g., holes). This is because the hole allows the cleaning liquid to enter the upper surface side of the film during the cleaning operation of the substrate holding device, thereby reducing the accuracy of the film temperature measurement. However, in the case where an opening (for example, a hole) is provided, it is preferable to remove a gas (for example, nitrogen) from the side of the carrier to the film temperature measuring area during the cleaning operation of the substrate holding device. Water droplets.

在使用具有複數個壓力室之基板固持裝置之情形時，係設有可量測薄膜溫度之複數個溫度感測器(例如紅外線溫度計)，俾相對應於所有之壓力室皆各設有一量測裝置，因此可以各個薄膜溫度感測器之多元線性回歸方程式，估算相對應於各個壓力室位置之晶圓溫度。若不在所有壓力室分設壓力感測器，至少須設置兩個薄膜溫度感測器。在此情形下，可使用該至少兩個感測器之量測結果，進行***計算(interpolate)並估算在相對應於未設有薄膜溫度感測器之各壓力室之位置之晶圓之溫度，而可利用線性插值(linear interpolation)或其它插值法(例如二次方程式(quadratic))，從兩個薄膜溫度感測器之量測結果估算晶圓溫度。根據此方法，可使用較少數量之薄膜溫度感測器估算整個晶圓表面之溫度分布。再者，利用未設有薄膜溫度感測器之壓力室之溫度估算值可改變研磨條件。舉例而言，當壓力室之估算溫度高時，該壓力室之壓力是低的。In the case of using a substrate holding device having a plurality of pressure chambers, a plurality of temperature sensors (for example, infrared thermometers) capable of measuring the temperature of the film are provided, and each of the pressure chambers is provided with a measurement. The device can therefore estimate the wafer temperature corresponding to the position of each pressure chamber by a multiple linear regression equation for each film temperature sensor. If not all pressure chambers are provided with pressure sensors, at least two membrane temperature sensors must be provided. In this case, the measurement results of the at least two sensors can be used to perform interpolation calculation and estimate the temperature of the wafer corresponding to the positions of the pressure chambers not provided with the film temperature sensor. The linear temperature interpolation or other interpolation method (for example, quadratic) can be used to estimate the wafer temperature from the measurement results of the two film temperature sensors. According to this method, a smaller number of film temperature sensors can be used to estimate the temperature distribution across the wafer surface. Furthermore, the grinding conditions can be varied using temperature estimates of pressure chambers that are not provided with a film temperature sensor. For example, when the estimated temperature of the pressure chamber is high, the pressure of the pressure chamber is low.

第22圖係顯示該頂環之更詳細結構之剖面示圖，該頂環具有該紅外線溫度計以及可量測載具溫度之該熱電偶。Figure 22 is a cross-sectional view showing a more detailed structure of the top ring having the infrared thermometer and the thermocouple capable of measuring the temperature of the carrier.

第22圖所示之頂環1係對應於第3圖所示之頂環1，但結構更為詳細。如第22圖所示，頂環1基本上是由頂環體2所構成，該頂環體2經構形為可將該半導體晶圓壓迫使之抵緊該研磨面101a(參照第1圖)，且該固定環3經構形為可直接壓迫著該研磨表面。該頂環體2包括該盤形頂環凸圓41、附裝於該盤形頂環凸圓41之下表面之頂環隔件42、以及附裝於該頂環隔件42之下表面之載具43。該固定環3係附裝於該頂環體2之頂環凸緣41之周圍部份，而該頂環凸緣41則藉著螺栓308耦合頂環軸111。該頂環隔件42係藉著各螺栓(未示)固定於該頂環凸緣，而該載具43係藉著螺栓(未示)固定於該頂環隔件42。該頂環凸緣41、該頂環隔件42、以及該載具43係構成該頂環體(2)，其係由樹脂例如工程塑膠(例如PEEK)所製成。該頂環凸緣41可以金屬例如不銹鋼(SUS)或鋁製成。The top ring 1 shown in Fig. 22 corresponds to the top ring 1 shown in Fig. 3, but the structure is more detailed. As shown in Fig. 22, the top ring 1 is basically constituted by a top ring body 2 which is configured to press the semiconductor wafer against the polishing surface 101a (refer to Fig. 1). And the retaining ring 3 is configured to directly compress the abrasive surface. The top ring body 2 includes the disc top ring boss 41, a top ring spacer 42 attached to a lower surface of the disc top ring dome 41, and a lower surface of the top ring spacer 42 attached thereto. Carrier 43. The retaining ring 3 is attached to a peripheral portion of the top ring flange 41 of the top ring body 2, and the top ring flange 41 is coupled to the top ring shaft 111 by bolts 308. The top ring spacer 42 is fixed to the top ring flange by bolts (not shown), and the carrier 43 is fixed to the top ring spacer 42 by bolts (not shown). The top ring flange 41, the top ring spacer 42, and the carrier 43 constitute the top ring body (2) made of a resin such as engineering plastic (for example, PEEK). The top ring flange 41 may be made of metal such as stainless steel (SUS) or aluminum.

與半導體晶圓之背面接觸之彈性薄膜4係附裝於該載具43之底面。更具體而言，該薄膜4係藉著設置於該薄膜4周圍部份之環狀邊緣固定器316以及設在該邊緣固定器316內側之環狀波紋固定器(ripple holders)318及319，而附裝於該載具43之下表面。該薄膜4係由具有極佳強度及耐久度之橡膠材料(例如乙丙橡膠(ethylene propylene,EPDM)、聚氨酯橡膠(polyurethane rubber)、以及矽橡膠)所製成。An elastic film 4 that is in contact with the back surface of the semiconductor wafer is attached to the bottom surface of the carrier 43. More specifically, the film 4 is formed by an annular edge holder 316 disposed at a portion around the film 4 and looper holders 318 and 319 disposed inside the edge holder 316. Attached to the lower surface of the carrier 43. The film 4 is made of a rubber material having excellent strength and durability (for example, ethylene propylene (EPDM), polyurethane rubber, and ruthenium rubber).

該邊緣固定器316係由該波紋固定器318所固持，而該波紋固定器318則由複數個止動器320附裝於該載具43之底表面。同樣地，該波紋固定器319亦由複數個止動器(未示)附裝於該載具43之底表面。該中心室5係形成於該薄膜4之中央部位。The edge holder 316 is held by the corrugated holder 318, and the corrugated holder 318 is attached to the bottom surface of the carrier 43 by a plurality of stoppers 320. Similarly, the corrugated holder 319 is also attached to the bottom surface of the carrier 43 by a plurality of stoppers (not shown). The center chamber 5 is formed at a central portion of the film 4.

該波紋固定器318經安排為將薄膜4之一波紋(ripple)314b壓抵於該載具34之底表面，而該波紋固定器319經安排為將薄膜4之一波紋314a壓抵於該載具34之底表面。藉著該波紋固定器318將該薄膜4之一邊緣314c壓抵於該邊緣固定器316。The corrugated holder 318 is arranged to press a ripple 314b of the film 4 against the bottom surface of the carrier 34, and the corrugated holder 319 is arranged to press one of the corrugations 314a of the film 4 against the carrier With a bottom surface of 34. One edge 314c of the film 4 is pressed against the edge holder 316 by the corrugated holder 318.

該中心室5係形成於該薄膜4之中央部位。再者，該環狀波紋室6係形成於薄膜4之波紋314a與波紋314b之間。而該環狀外室7係由該外隔牆314b與該邊緣隔牆314c所形成。該環狀邊緣室8係由該邊緣隔牆314c與該薄膜4之一側牆314e所形成。各壓力室5、6、7及8係透過形成於該頂環體2之各流體通道而與該壓力調節單元30(參照第2圖)連接。The center chamber 5 is formed at a central portion of the film 4. Further, the annular corrugated chamber 6 is formed between the corrugations 314a of the film 4 and the corrugations 314b. The annular outer chamber 7 is formed by the outer partition wall 314b and the edge partition wall 314c. The annular edge chamber 8 is formed by the edge partition 314c and one of the side walls 314e of the film 4. Each of the pressure chambers 5, 6, 7, and 8 is connected to the pressure adjusting unit 30 (see FIG. 2) through the respective fluid passages formed in the top ring body 2.

該固定環3係經構形以便將該半導體晶圓之周圍邊緣固定，此固定環3包括一缸體400，具有一封閉之頂部、一固持元件402，係固定於該缸體400之頂部、一薄膜404，係受該固持元件402固定於該缸體400內、一活塞406，係與該薄膜404之底端部分連接、以及一環件408，係受該活塞406往下推。該固定環壓力室9係形成於該薄膜404內。此薄膜404係由具有極佳強度及耐久度之橡膠材料(例如乙丙橡膠(EPDM)、聚氨酯橡膠、以及矽烷橡膠)所製成。The fixing ring 3 is configured to fix the peripheral edge of the semiconductor wafer. The fixing ring 3 includes a cylinder 400 having a closed top and a holding member 402 fixed to the top of the cylinder 400. A film 404 is fixed in the cylinder 400 by the holding member 402, a piston 406 is connected to the bottom end portion of the film 404, and a ring member 408 is pushed down by the piston 406. The fixed ring pressure chamber 9 is formed in the film 404. The film 404 is made of a rubber material having excellent strength and durability such as ethylene propylene rubber (EPDM), urethane rubber, and decane rubber.

該固持元件402設有一流體通道(未示)，其係與該薄膜404所界定之固定環壓力室9連通。此形成於該固持元件402內之流體通道，係透過形成於該頂環體2之一流體通道而與該壓力調節單元30(參照第2圖)連接。The retaining member 402 is provided with a fluid passage (not shown) that communicates with the stationary ring pressure chamber 9 defined by the membrane 404. The fluid passage formed in the holding member 402 is connected to the pressure adjusting unit 30 (see FIG. 2) through a fluid passage formed in the top ring body 2.

在根據本實施利之頂環1中，供給至形成於該薄膜4與該載具43間之各壓力室(亦即該中心室5、該波紋室6、該外室7以及該邊緣室8)之各流體之壓力，以及供給至該固定環壓力室9之流體之壓力，可以被獨立地調整。根據此等結構，可將該薄膜4將該半導體晶圓壓抵於該研磨墊101之壓迫力在該半導體晶圓之各區域中調整，且可將該固定環3將該研磨墊101壓抵之壓迫力依所需而調整。In the top ring 1 according to the present embodiment, it is supplied to each pressure chamber formed between the film 4 and the carrier 43 (that is, the center chamber 5, the corrugated chamber 6, the outer chamber 7, and the edge chamber 8) The pressure of each of the fluids, and the pressure of the fluid supplied to the pressure chamber 9 of the stationary ring, can be independently adjusted. According to such a structure, the pressing force of the film 4 for pressing the semiconductor wafer against the polishing pad 101 can be adjusted in each region of the semiconductor wafer, and the fixing ring 3 can be pressed against the polishing pad 101. The pressure is adjusted as needed.

在第22圖所示之實施例中，該紅外線溫度計45係面對著薄膜4之中心室5，此紅外線溫度計45可經安排而與另一壓力室面對著。在此一情形下，有關晶圓在徑向上該壓力室之隔牆位置即可適當地加以改變。為了將噪音影響降至最小，使該紅外線溫度計45設於鄰近該薄膜4之位置，因而面對著該薄膜4(亦即位於該載具側邊)。可將一O-型環85設在該紅外線溫度計45外表面與該載具43之間，因此該壓力室內之加壓流體以及真空壓力即不會洩漏。供量測該載具43之溫度之熱電偶48係設於該載具43之上表面上，並在一相對應於該中心室5之位置上。可將複數個供量測該載具43之溫度之熱電偶48設於該載具43之上表面上，因而與各個壓力室相對應。可採用自其中之一熱電偶48獲致之溫度量測值，以代表該載具43之溫度，並可直接量測載具43之底表面之溫度。在藉著載具43之上表面之熱電偶以量測載具43之底表面溫度之情形，最好是使載具34儘量薄，以便使熱電偶量測載具43之底表面溫度能夠獲致好的回應性(responsiveness)。此外，由於該載具43是一當替換耗損之頂環時之可移除元件，為了提供一移除容易之結構，最好是使用熱電偶連接器，使之連接紅外線溫度計電線與熱電偶。In the embodiment shown in Fig. 22, the infrared thermometer 45 faces the center chamber 5 of the film 4, and the infrared thermometer 45 can be arranged to face the other pressure chamber. In this case, the position of the partition wall of the pressure chamber in the radial direction of the wafer can be appropriately changed. In order to minimize the effects of noise, the infrared thermometer 45 is placed adjacent to the film 4 so as to face the film 4 (i.e., on the side of the carrier). An O-ring 85 can be disposed between the outer surface of the infrared thermometer 45 and the carrier 43, so that the pressurized fluid and the vacuum pressure in the pressure chamber do not leak. A thermocouple 48 for measuring the temperature of the carrier 43 is provided on the upper surface of the carrier 43 at a position corresponding to the center chamber 5. A plurality of thermocouples 48 for measuring the temperature of the carrier 43 may be disposed on the upper surface of the carrier 43, thus corresponding to the respective pressure chambers. The temperature measurement obtained from one of the thermocouples 48 can be used to represent the temperature of the carrier 43 and the temperature of the bottom surface of the carrier 43 can be directly measured. In the case where the temperature of the bottom surface of the carrier 43 is measured by the thermocouple on the upper surface of the carrier 43, it is preferable to make the carrier 34 as thin as possible so that the temperature of the bottom surface of the thermocouple measuring carrier 43 can be obtained. Good responsiveness. In addition, since the carrier 43 is a removable component when replacing the worn top ring, in order to provide an easy-to-remove structure, it is preferable to use a thermocouple connector to connect the infrared thermometer wire to the thermocouple.

在如第22圖所示之構造之頂環1中，該紅外線溫度計45量測著來自薄膜4之紅外線量，該熱電偶48量測著該載具43之溫度，而如先前參照第3圖至第13圖所討論，晶圓之溫度是由該紅外線溫度計45之量測值以及該熱電偶48之量測值所估算者。In the top ring 1 of the configuration shown in Fig. 22, the infrared thermometer 45 measures the amount of infrared rays from the film 4, and the thermocouple 48 measures the temperature of the carrier 43, as previously referred to Fig. 3. As discussed in FIG. 13, the temperature of the wafer is estimated from the measured value of the infrared thermometer 45 and the measured value of the thermocouple 48.

雖然本發明各實施例已在此敘述，但本發明並不受限於上述之實施例。是故，且應可瞭解的是，在本發明技術思想之範疇下，本發明仍適用於其它之實施例。Although various embodiments of the invention have been described herein, the invention is not limited to the embodiments described above. It is to be understood that the present invention is still applicable to other embodiments within the scope of the technical idea of the present invention.

1．．．頂環1. . . Top ring

2．．．頂環體2. . . Top ring

3．．．固定環3. . . M

4．．．彈性薄膜4. . . Elastic film

4a．．．隔牆4a. . . partition

5．．．圓形中心室5. . . Round center room

6．．．環狀波紋室6. . . Annular corrugated chamber

7．．．環狀外室7. . . Annular outer chamber

8．．．環狀邊緣室8. . . Annular edge chamber

9．．．固定環壓力室9. . . Fixed ring pressure chamber

13、14、15．．．通道13, 14, 15. . . aisle

21、22、23、24．．．通道21, 22, 23, 24. . . aisle

25．．．旋轉接頭25. . . Rotary joint

26．．．通道26. . . aisle

30．．．壓力調節單元30. . . Pressure regulating unit

31．．．真空源31. . . Vacuum source

35．．．氣-液分離器35. . . Gas-liquid separator

41．．．頂環凸緣41. . . Top ring flange

42．．．頂環分隔件42. . . Top ring divider

43．．．載具43. . . vehicle

45．．．紅外線溫度計45. . . Infrared thermometer

46．．．冷端溫度感測單元46. . . Cold junction temperature sensing unit

47．．．數據接收單元47. . . Data receiving unit

48．．．熱電偶48. . . Thermocouple

49．．．熱電偶49. . . Thermocouple

50．．．控制器50. . . Controller

51．．．熱電偶51. . . Thermocouple

52．．．晶圓加熱及冷卻裝置52. . . Wafer heating and cooling device

55．．．壓力控制器55. . . pressure controller

56．．．氮氣源56. . . Nitrogen source

60-1．．．第一壓力控制器60-1. . . First pressure controller

61．．．壓力感測器61. . . Pressure sensor

62-2．．．第二壓力控制器62-2. . . Second pressure controller

70．．．研磨墊溫度控制裝置70. . . Grinding pad temperature control device

80．．．盤形裝戴器80. . . Disk mounter

81．．．水平延伸擺動軸81. . . Horizontally extending swing axis

82．．．紅外線溫度計82. . . Infrared thermometer

100．．．研磨台100. . . Grinding table

100a．．．台軸100a. . . Axle

101．．．研磨墊101. . . Abrasive pad

101a．．．研磨墊表面101a. . . Abrasive pad surface

102．．．噴嘴102. . . nozzle

110．．．頂環頭110. . . Top ring head

111．．．頂環軸111. . . Top ring axle

112．．．旋轉套筒112. . . Rotating sleeve

113．．．同步輪113. . . Synchronous wheel

114．．．頂環馬達114. . . Top ring motor

115．．．同步帶115. . . Timing belt

116．．．同步輪116. . . Synchronous wheel

117．．．頂環頭軸117. . . Top ring head shaft

124．．．垂直移動機構124. . . Vertical moving mechanism

126．．．軸承126. . . Bearing

128．．．橋部128. . . Bridge

129．．．支撐階129. . . Support stage

130．．．桿130. . . Rod

131．．．真空源131. . . Vacuum source

132．．．滾珠螺桿132. . . Ball screw

132a．．．螺軸132a. . . Screw shaft

132b．．．螺帽132b. . . Nut

138．．．交流伺服馬達138. . . AC servo motor

314a、314b．．．波紋314a, 314b. . . ripple

314c．．．隔牆314c. . . partition

316．．．邊緣固定器316. . . Edge holder

318．．．波紋固定器318. . . Corrugated holder

319．．．波紋固定器319. . . Corrugated holder

320．．．止動器320. . . Stopper

400．．．缸體400. . . Cylinder block

402．．．固持元件402. . . Holding element

404．．．薄膜404. . . film

406．．．活塞406. . . piston

408．．．環件408. . . Ring

F1、F2、F3、F4、F5．．．流率感測器F1, F2, F3, F4, F5. . . Flow rate sensor

P1、P2、P3、P4、P5．．．壓力感測器P1, P2, P3, P4, P5. . . Pressure sensor

Q．．．研磨液Q. . . Slurry

R1、R2、R3、R4．．．壓力調節器R1, R2, R3, R4. . . Pressure regulator

V1-1、V1-2、V1-3．．．閥V1-1, V1-2, V1-3. . . valve

V2-1、V2-2、V2-3．．．閥V2-1, V2-2, V2-3. . . valve

V3-1、V3-2、V3-3．．．閥V3-1, V3-2, V3-3. . . valve

V4-1、V4-2、V4-3．．．閥V4-1, V4-2, V4-3. . . valve

W．．．半導體晶圓W. . . Semiconductor wafer

第1圖係根據本發明一實施例研磨裝置之整體結構示意圖；1 is a schematic view showing the overall structure of a polishing apparatus according to an embodiment of the present invention;

第2圖係一剖面示意圖，顯示一構成基板固持裝置之頂環，該頂環可將作為被研磨物之半導體晶圓固持住，並將該半導體晶圓壓迫抵住研磨台上之研磨表面；2 is a cross-sectional view showing a top ring constituting a substrate holding device, the top ring holding a semiconductor wafer as an object to be polished, and pressing the semiconductor wafer against an abrasive surface on the polishing table;

第3圖係一剖面示意圖，顯示該頂環之主要結構元件；Figure 3 is a schematic cross-sectional view showing the main structural elements of the top ring;

第4圖係一剖面示意圖，顯示一實驗裝置，其可供當一半導體晶圓(基板)被加熱及冷卻時量測一晶圓之溫度、一薄膜之溫度、一載具之溫度、以及類似者；Figure 4 is a cross-sectional view showing an experimental apparatus for measuring the temperature of a wafer, the temperature of a film, the temperature of a carrier, and the like when a semiconductor wafer (substrate) is heated and cooled. By;

第5圖係一圖表，係當半導體晶圓(基板)下表面，因藉著使用第4圖所示之實驗裝置而被強制加熱所加熱時，以及隨後被強制冷卻所冷卻時，各該溫度之時間變數所繪製之圖；Figure 5 is a diagram showing the lower surface of a semiconductor wafer (substrate) when it is heated by forced heating by using the experimental apparatus shown in Fig. 4, and then cooled by forced cooling. a graph of the time variable;

第6A圖及第6B圖係利用第5圖所示之所有時間序列數據(time-series data)所繪製之圖表，其中紅外線溫度計量測值係繪於水平軸線，而同時由熱電偶所量測之薄膜上表面溫度量測值係繪於垂直軸線上；Figures 6A and 6B are graphs drawn using all of the time-series data shown in Figure 5, where the infrared temperature measurements are plotted on a horizontal axis and simultaneously measured by a thermocouple. The film upper surface temperature measurement is plotted on the vertical axis;

第7A圖及第7B圖係各圖表，其中紅外線溫度計量測修正值係繪於水平軸線上，而同時由熱電偶所量測之薄膜上表面溫度量測值係繪於垂直軸線上；Figures 7A and 7B are diagrams in which the infrared temperature measurement correction value is plotted on the horizontal axis, and the film upper surface temperature measurement measured by the thermocouple is plotted on the vertical axis;

第8A圖及第8B圖係各圖表，其中由一薄膜溫度估算方程式所計算之薄膜溫度估算值係繪於水平軸線上，而同時由熱電偶所量測之薄膜上表面溫度量測值係繪於垂直軸線上；Figures 8A and 8B are diagrams in which the film temperature estimates calculated from a film temperature estimation equation are plotted on the horizontal axis, while the film upper surface temperature measurement measured by the thermocouple is drawn. On the vertical axis;

第9圖係顯示結果之一圖表，其中薄膜溫度係利用多元線性回歸方程式，自第5圖所示紅外線溫度計量測值以及載具溫度量測值所估算出者；Figure 9 is a graph showing the results, wherein the film temperature is estimated from the infrared temperature measurement value shown in Figure 5 and the measured temperature value of the vehicle using a multiple linear regression equation;

第10圖係利用第5圖所示之所有時間序列數據所繪製之圖表，其中由薄膜溫度估算方程式所計算之薄膜溫度估算值係繪於水平軸線上，而同時由熱電偶所量測之晶圓下表面溫度量測值係繪於垂直軸線上；Figure 10 is a graph drawn using all of the time series data shown in Figure 5, where the film temperature estimates calculated from the film temperature estimation equation are plotted on the horizontal axis while the crystal is measured by the thermocouple. The measurement of the temperature of the lower surface of the circle is plotted on the vertical axis;

第11圖係一圖表，其中晶圓溫度量測值係繪於水平軸線上，而同時由熱電偶所量測之晶圓下表面溫度量測值係繪於垂直軸線上；Figure 11 is a graph in which the wafer temperature measurement is plotted on the horizontal axis, while the lower surface temperature measurement measured by the thermocouple is plotted on the vertical axis;

第12圖係顯示結果之一圖表，其中晶圓溫度係利用多元線性回歸方程式自第5圖所示紅外線溫度計量測值以及載具溫度量測值所估算出者；Figure 12 is a graph showing the results, wherein the wafer temperature is estimated from the infrared temperature measurement value shown in Figure 5 and the temperature measurement value of the vehicle using a multiple linear regression equation;

第13圖係顯示根據本發明研磨裝置其中一態樣所執行，藉著自紅外線溫度計量測值及載具溫度量測值估算晶圓溫度，以供決定各研磨條件及類似者之製程之一流程圖；Figure 13 is a view showing one of the aspects of the polishing apparatus according to the present invention, estimating the wafer temperature by the infrared temperature measurement value and the vehicle temperature measurement value, for determining the grinding conditions and the processes of the similar ones. flow chart;

第14A圖係第2圖之XIV部分之放大圖，而第14B圖係一視圖其顯示一供給具有大氣壓力之氮氣至該壓力室之管路系統；Figure 14A is an enlarged view of a portion XIV of Figure 2, and Figure 14B is a view showing a piping system for supplying nitrogen gas having atmospheric pressure to the pressure chamber;

第15圖係該頂環之一剖面示意圖，該頂環具有可執行壓力室溫度控制之結構；Figure 15 is a schematic cross-sectional view of the top ring, the top ring having a structure for performing temperature control of the pressure chamber;

第16圖係一平面示意圖，其顯示一供給研磨漿(研磨液)之研磨液供給噴嘴、該研磨墊、以及該頂環之配置；Figure 16 is a plan view showing a configuration of a slurry supply nozzle for supplying a slurry (grinding liquid), the polishing pad, and the top ring;

第17圖係一平面示意圖，其顯示該研磨墊之一溫度控制裝置範例；Figure 17 is a plan view showing an example of a temperature control device of the polishing pad;

第18圖係一平面示意圖，其顯示該研磨墊之另一溫度控制裝置範例；Figure 18 is a plan view showing an example of another temperature control device of the polishing pad;

第19圖係一平面示意圖，其顯示整修負荷(dress load)以及/或該掃瞄速度被改變之範例；Figure 19 is a plan view showing an example of a dress load and/or a change in the scanning speed;

第20圖係一平面示意圖，其顯示一根據晶圓溫度而改變研磨漿落下位置之範例；Figure 20 is a plan view showing an example of changing the position at which the slurry falls depending on the temperature of the wafer;

第21圖係顯示一範例之一平面示意圖，其中該研磨墊之溫度(分佈)量測係與晶圓溫度量測同時進行，而溫度控制係基於所量測之結果而執行；以及Figure 21 is a plan view showing an example in which the temperature (distribution) measurement of the polishing pad is performed simultaneously with the wafer temperature measurement, and the temperature control is performed based on the measured result;

第22圖係一剖面示圖，顯示該頂環之更詳細結構，其具有該紅外線溫度計以及可量測載具溫度之該熱電偶。Figure 22 is a cross-sectional view showing a more detailed structure of the top ring having the infrared thermometer and the thermocouple capable of measuring the temperature of the carrier.

1．．．頂環1. . . Top ring

2．．．頂環體2. . . Top ring

3．．．固定環3. . . M

25．．．旋轉接頭25. . . Rotary joint

50．．．控制器50. . . Controller

100．．．研磨台100. . . Grinding table

100a．．．台軸100a. . . Axle

101．．．研磨墊101. . . Abrasive pad

101a．．．研磨墊表面101a. . . Abrasive pad surface

102．．．噴嘴102. . . nozzle

110．．．頂環頭110. . . Top ring head

111．．．頂環軸111. . . Top ring axle

112．．．旋轉套筒112. . . Rotating sleeve

113．．．同步輪113. . . Synchronous wheel

114．．．頂環馬達114. . . Top ring motor

115．．．同步帶115. . . Timing belt

116．．．同步輪116. . . Synchronous wheel

117．．．頂環頭軸117. . . Top ring head shaft

124．．．垂直移動機構124. . . Vertical moving mechanism

126．．．軸承126. . . Bearing

128．．．橋部128. . . Bridge

129．．．支撐階129. . . Support stage

130．．．桿130. . . Rod

132．．．滾珠螺桿132. . . Ball screw

132a．．．螺軸132a. . . Screw shaft

132b．．．螺帽132b. . . Nut

138．．．交流伺服馬達138. . . AC servo motor

Q．．．研磨液Q. . . Slurry

W．．．半導體晶圓W. . . Semiconductor wafer

Claims (20)

一種供研磨基板之研磨裝置，包含：一研磨台，其具有一研磨表面；一基板固持裝置，其係經構形為可將基板固定並將基板壓抵著該研磨表面；以及一控制器；該基板固持裝置包含：一彈性薄膜，其係經構形以便形成一基板固持表面，而與該基板接觸；一載具，其係設置於該彈性薄膜上方；至少一壓力室，其係形成於該彈性薄膜與該載具之間；以及一紅外線偵測器，其係經構形以便量測來自該彈性薄膜之熱能；其中，該控制器利用紅外線偵測器之量測值，以計算該彈性薄膜之溫度估算值。 A polishing apparatus for polishing a substrate, comprising: a polishing table having an abrasive surface; a substrate holding device configured to fix the substrate and press the substrate against the polishing surface; and a controller; The substrate holding device comprises: an elastic film configured to form a substrate holding surface to be in contact with the substrate; a carrier disposed above the elastic film; at least one pressure chamber formed in the Between the elastic film and the carrier; and an infrared detector configured to measure thermal energy from the elastic film; wherein the controller uses the measured value of the infrared detector to calculate the Estimated temperature of the elastic film. 如申請專利範圍第1項所述之研磨裝置，其中該控制器利用該彈性薄膜之溫度估算值以計算該基板之溫度估算值。 The polishing apparatus of claim 1, wherein the controller uses the temperature estimation value of the elastic film to calculate a temperature estimation value of the substrate. 如申請專利範圍第1項所述之研磨裝置，其中係利用該彈性薄膜之溫度估算值以改變研磨條件者。 The polishing apparatus according to claim 1, wherein the temperature estimation value of the elastic film is used to change the grinding condition. 如申請專利範圍第1項所述之研磨裝置，其中該紅外線偵測器包含一紅外線溫度計。 The polishing apparatus of claim 1, wherein the infrared detector comprises an infrared thermometer. 一種基板固持裝置，可將基板固定並將基板壓抵著一 研磨表面，包含：一彈性薄膜，其係經構形以便形成一基板固持表面，而與該基板接觸；一載具，其係設置於該彈性薄膜上方；至少一壓力室，其係形成於該彈性薄膜與該載具之間；以及一紅外線偵測器，其係經構形以便量測來自該彈性薄膜之熱能；其中，於該彈性薄膜之基板固持表面之背面側施加有表面粗糙加工。 A substrate holding device capable of fixing a substrate and pressing the substrate against a The abrasive surface comprises: an elastic film configured to form a substrate holding surface to be in contact with the substrate; a carrier disposed above the elastic film; at least one pressure chamber formed in the Between the elastic film and the carrier; and an infrared detector configured to measure thermal energy from the elastic film; wherein surface roughening is applied to the back side of the substrate holding surface of the elastic film. 如申請專利範圍第5項所述之基板固持裝置，其中在該彈性薄膜與該載具之間至少形成兩個壓力室，且該紅外線偵測器係至少設置於該至少兩個壓力室其中之一壓力室者。 The substrate holding device of claim 5, wherein at least two pressure chambers are formed between the elastic film and the carrier, and the infrared detector is disposed at least in the at least two pressure chambers. A pressure room. 如申請專利範圍第5項所述之基板固持裝置，其中可供形成其內設有紅外線偵測器之壓力室之該彈性薄膜之該基板固持表面並未設有開口。 The substrate holding device according to claim 5, wherein the substrate holding surface of the elastic film for forming the pressure chamber in which the infrared detector is disposed is not provided with an opening. 如申請專利範圍第5項所述之基板固持裝置，其中該紅外線偵測器包含一紅外線溫度計。 The substrate holding device of claim 5, wherein the infrared detector comprises an infrared thermometer. 一種基板固持裝置，用以將基板固定並將基板壓抵著一研磨表面，包含：一彈性薄膜，其係經構形以便形成一基板固持表面，而與該基板接觸；一載具，其係設置於該彈性薄膜上方； 至少一壓力室，其係形成於該彈性薄膜與該載具之間；以及一紅外線偵測器，其係經構形以便量測來自該彈性薄膜之熱能；以及一量測儀器，其係設置於該彈性薄膜之基板固持表面之背面側且其經構形以便量測除了彈性薄膜以外之部分之熱能。 A substrate holding device for fixing a substrate and pressing the substrate against an abrasive surface, comprising: an elastic film configured to form a substrate holding surface to be in contact with the substrate; and a carrier Provided above the elastic film; At least one pressure chamber formed between the elastic film and the carrier; and an infrared detector configured to measure thermal energy from the elastic film; and a measuring instrument configured The back surface side of the substrate holding surface of the elastic film is configured to measure thermal energy of a portion other than the elastic film. 如申請專利範圍第9項所述之基板固持裝置，其中該量測儀器量測該載具之熱能。 The substrate holding device of claim 9, wherein the measuring instrument measures the thermal energy of the carrier. 如申請專利範圍第9項所述之基板固持裝置，進一步包含一壓力感測器其經構形以便量測該壓力室之壓力。 The substrate holding device of claim 9, further comprising a pressure sensor configured to measure the pressure of the pressure chamber. 如申請專利範圍第9項所述之基板固持裝置，進一步包含一控制器其經構形以便利用該紅外線偵測器量測值以及該量測儀器量測值，以計算該彈性薄膜溫度之估算值。 The substrate holding device of claim 9, further comprising a controller configured to utilize the infrared detector measurement value and the measurement value of the measuring instrument to calculate an estimate of the temperature of the elastic film value. 如申請專利範圍第12項所述之基板固持裝置，其中預先準備複數套之該彈性薄膜溫度量測值、該紅外線偵測器量測值(T1)、以及該量測儀器量測值(T2)；由(彈性薄膜溫度估算值)=b0+b1×T1+b2×T2所代表之多元線性回歸方程式，計算極小化(彈性薄膜溫度量測值-彈性薄膜溫度估算值)2之回歸係數(regression coefficients)b0、b1及b2；以及利用下列方程式：(彈性薄膜溫度估算值)=b0+ b1×(彈性薄膜溫度量測值)+b2×(量測儀器量測值)，以計算彈性薄膜溫度估算值。 The substrate holding device of claim 12, wherein the plurality of sets of the elastic film temperature measurement value, the infrared detector measurement value (T 1 ), and the measuring instrument measurement value are prepared in advance ( T 2 ); calculated by minimization (multiple linear regression equation represented by (elastic film temperature estimation) = b 0 + b 1 × T 1 + b 2 × T 2 (elastic film temperature measurement - elastic film temperature estimation) Value) 2 regression coefficients b 0 , b 1 and b 2 ; and using the following equation: (elastic film temperature estimate) = b 0 + b 1 × (elastic film temperature measurement) + b 2 × (Measuring instrument measurements) to calculate elastic film temperature estimates. 如申請專利範圍第12項所述之基板固持裝置，其中該控制器利用該彈性薄膜之溫度估算值以及該量測儀器量測值，以計算該基板之溫度估算值。 The substrate holding device of claim 12, wherein the controller uses the temperature estimation value of the elastic film and the measuring instrument to calculate a temperature estimation value of the substrate. 如申請專利範圍第14項所述之基板固持裝置，其中，預先準備複數套該基板溫度量測值、該彈性薄膜溫度估算值(T1)、以及該量測儀器量測值(T2)；由(基板溫度估算值)=b0+b1×T1+b2×T2所代表之多元線性回歸方程式，計算極小化(基板溫度量測值-基板溫度估算值)2之回歸係數b0、b1及b2；以及利用下列方程式：(基板溫度估算值)=b0+b1×(彈性薄膜溫度估算值)+b2×(量測儀器量測值)，計算基板溫度估算值。 The substrate holding device according to claim 14, wherein a plurality of sets of the substrate temperature measurement value, the elastic film temperature estimation value (T 1 ), and the measuring instrument measurement value (T 2 ) are prepared in advance. The regression coefficient of the minimization (substrate temperature measurement - substrate temperature estimation) 2 is calculated from the multiple linear regression equation represented by (substrate temperature estimation value) = b 0 + b 1 × T 1 + b 2 × T 2 b 0 , b 1 and b 2 ; and calculate the substrate temperature using the following equation: (substrate temperature estimate) = b 0 + b 1 × (elastic film temperature estimate) + b 2 × (measuring instrument measurement) estimated value. 如申請專利範圍第9項所述之基板固持裝置，其中在該彈性薄膜與該載具之間至少形成兩個壓力室，且該紅外線偵測器係至少設置於該至少兩個壓力室其中之一壓力室者。 The substrate holding device of claim 9, wherein at least two pressure chambers are formed between the elastic film and the carrier, and the infrared detector is disposed at least in the at least two pressure chambers. A pressure room. 如申請專利範圍第9項所述之基板固持裝置，其中供形成其內設有紅外線偵測器之壓力室之該彈性薄膜之該基板固持表面並未設有開口。 The substrate holding device according to claim 9, wherein the substrate holding surface of the elastic film for forming the pressure chamber in which the infrared detector is disposed is not provided with an opening. 如申請專利範圍第9項所述之基板固持裝置，其中該紅外線偵測器包含一紅外線溫度計。 The substrate holding device of claim 9, wherein the infrared detector comprises an infrared thermometer. 一種研磨裝置，包含：一研磨台，其具有一研磨表面；以及一基板固持裝置，用以將基板固定並將基板壓抵著一研磨表面；包含：一彈性薄膜，其係經構形以便形成一基板固持表面，而與該基板接觸；一載具，其係設置於該彈性薄膜上方；至少一壓力室，其係形成於該彈性薄膜與該載具之間；以及一紅外線偵測器，其係經構形以便量測來自該彈性薄膜之熱能；其中，於該彈性薄膜之基板固持表面之背面側施加有表面粗糙加工。 A polishing apparatus comprising: a polishing table having an abrasive surface; and a substrate holding device for fixing the substrate and pressing the substrate against an abrasive surface; comprising: an elastic film configured to form a substrate holding surface and contacting the substrate; a carrier disposed above the elastic film; at least one pressure chamber formed between the elastic film and the carrier; and an infrared detector It is configured to measure thermal energy from the elastic film; wherein surface roughening is applied to the back side of the substrate holding surface of the elastic film. 一種研磨裝置，包含：一研磨台，其具有一研磨表面；以及一基板固持裝置，用以將基板固定並將基板壓抵著一研磨表面；包含：一彈性薄膜，其係經構形以便形成一基板固持表面，而與該基板接觸；一載具，其係設置於該彈性薄膜上方；至少一壓力室，其係形成於該彈性薄膜與該載具之間；一紅外線偵測器，其係經構形以便量測來自該彈性薄膜之熱能；以及 一量測儀器，其係設置於該彈性薄膜之基板固持表面之背面側且其經構形以便量測除了彈性薄膜部分之熱能。 A polishing apparatus comprising: a polishing table having an abrasive surface; and a substrate holding device for fixing the substrate and pressing the substrate against an abrasive surface; comprising: an elastic film configured to form a substrate holding surface and contacting the substrate; a carrier disposed above the elastic film; at least one pressure chamber formed between the elastic film and the carrier; an infrared detector; Configuring to measure thermal energy from the elastic film; A measuring instrument is disposed on the back side of the substrate holding surface of the elastic film and configured to measure thermal energy in addition to the elastic film portion.
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