TWI570765B - Induction Coupled Plasma Ceramic Window Cooling Device - Google Patents
Induction Coupled Plasma Ceramic Window Cooling Device Download PDFInfo
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本發明涉及TSV蝕刻工藝裝置，具體涉及一種感應耦合電漿體陶瓷窗冷卻裝置。The invention relates to a TSV etching process device, in particular to an inductively coupled plasma ceramic window cooling device.
在TSV 蝕刻工藝中，有對矽材料進行溝槽（Trench）蝕刻，也有斜孔（Taper Via）蝕刻。蝕刻後的剖面有兩個很重要的參數是深度和傾斜的角度。要同時滿足這兩個要求，必須要求TSV蝕刻設備對該工藝有很好的蝕刻均勻性控制，包括深度的均勻性（Uniformity）和角度的均勻性。In the TSV etching process, there is a Trench etching of the germanium material and a taper Via etching. Two important parameters for the etched profile are the depth and tilt angle. To meet both of these requirements, TSV etching equipment must be required to have good etch uniformity control for the process, including depth uniformity (uniformity) and angular uniformity.
經研究發現，TSV ICP電漿體中，電感產生的源電漿體可以提供很高的電漿體濃度，同時其分佈受到電感的形狀，位置和反應器的形狀和體積等因素的影響。電感通了射頻電源後，在其通路上形成交變的電場和磁場。電場和磁場共同作用在反應腔體內將低壓工藝氣體形成電漿體。It has been found that in the TSV ICP plasma, the source plasma generated by the inductor can provide a high plasma concentration, and its distribution is affected by the shape of the inductor, the position and the shape and volume of the reactor. After the inductor is powered by the RF power, an alternating electric and magnetic field is formed in its path. The electric field and the magnetic field act together to form a low pressure process gas into a plasma in the reaction chamber.
在一個感應耦合的電漿體反應器中，有兩個獨立的電感同時作用，既可以提供電漿體的密度，有可以調節矽片表面的電漿體均勻性。而這兩個電感的形狀和位置都不一樣。一個電感是水準電感，一個電感是垂直電感。這樣的電感配置，可以在矽片的上面形成兩個區域的電漿體。但是陶瓷材料窗（ceramic window）的冷卻成了重要的問題。傳統手段是的設置一個風扇在陶瓷材料窗上方向下吹氣，通過氣流帶走熱量，這在只有單一線圈時是有效的。在需要多個不同形狀線圈組合來電離下方反應器中氣體時，無論怎樣改變風扇的大小、位置、角度都無法有效且均勻的帶走不同形狀的陶瓷材料窗上的熱量。熱量積累不均衡會導致陶瓷材料窗上溫度梯度過大，材料窗會出現裂縫甚至破裂，同時材料窗上不同區域溫度不同還會同步造成反應器內不同區域的反應速度不同，這對改善電漿處理的效果很不利。In an inductively coupled plasma reactor, two separate inductors act simultaneously to provide both the density of the plasma and the uniformity of the plasma that regulates the surface of the cymbal. The shape and position of the two inductors are different. One inductor is a level inductor and one inductor is a vertical inductor. With such an inductive configuration, two regions of the plasma can be formed on the top of the raft. However, the cooling of the ceramic window has become an important issue. The conventional approach is to provide a fan that blows down the top of the ceramic material window and removes heat through the airflow, which is effective when there is only a single coil. When a combination of coils of different shapes is required to inject gas from the lower reactor, no matter how the size, position or angle of the fan is changed, the heat on the window of different shapes of ceramic material cannot be effectively and uniformly removed. Uneven accumulation of heat will cause the temperature gradient on the window of ceramic material to be too large, and the material window will crack or even rupture. At the same time, the temperature difference in different regions of the material window will also cause different reaction speeds in different regions of the reactor, which will improve the plasma treatment. The effect is very unfavorable.
本發明的目的在於提供一種感應耦合電漿體陶瓷窗冷卻裝置，通過設置導流環元件及多個導流環，使得該冷卻裝置的風扇產生的冷卻氣流能夠充分與第二線圈、絕緣柱接觸，實現在TSV蝕刻工藝中，能夠產生電漿體均勻分佈的電磁場的感應耦合電漿體陶瓷窗充分冷卻，提高TSV蝕刻工藝效率，及產品質量。An object of the present invention is to provide an inductively coupled plasma ceramic window cooling device. The cooling air current generated by the fan of the cooling device can be sufficiently contacted with the second coil and the insulating column by providing a flow guiding ring element and a plurality of air guiding rings. In the TSV etching process, the inductively coupled plasma ceramic window capable of generating an electromagnetic field uniformly distributed with the plasma is sufficiently cooled to improve the efficiency of the TSV etching process and product quality.
為了達到上述目的，本發明通過以下技術方案實現： 一種感應耦合電漿體陶瓷窗冷卻裝置，該冷卻裝置設置於感應耦合電漿體反應器的容器腔體頂部，使得容器腔體內部密封；其特點是，該冷卻裝置包含： 圓柱筒支架，所述圓柱筒支架橫截面呈環形； 絕緣板，所述絕緣板與所述的圓柱筒支架底部通過支撐部件固定連接，所述絕緣板與所述圓柱筒支架之間設有間隙； 第一線圈，設置在所述的圓柱筒支架內的所述絕緣板上； 第二線圈元件，設置在所述的絕緣板上方中部，且所述第二線圈元件包括圓柱狀的絕緣柱腔體以及繞置在絕緣柱腔體外部的第二線圈； 風扇，固定設置在所述的圓柱筒支架內頂部； 多個導流環，均勻環繞設置在所述的圓柱筒支架內壁，環繞設置在所述的第二線圈元件周邊。In order to achieve the above object, the present invention is achieved by the following technical solutions: an inductively coupled plasma ceramic window cooling device disposed at the top of a container cavity of an inductively coupled plasma reactor to seal the interior of the container cavity; The cooling device comprises: a cylindrical cylinder bracket having a circular cross section; an insulating plate, the insulating plate and the bottom of the cylindrical cylinder bracket being fixedly connected by a supporting member, the insulating plate and the insulating plate a gap is provided between the cylindrical tube holders; a first coil is disposed on the insulating plate in the cylindrical tube holder; a second coil element is disposed at a middle portion of the insulating plate, and the second coil The component comprises a cylindrical insulating column cavity and a second coil wound around the outside of the insulating column cavity; a fan fixedly disposed on the top of the cylindrical bracket; a plurality of guiding rings uniformly disposed around the An inner wall of the cylindrical bracket is disposed around the circumference of the second coil component.
優選地，所述的第一線圈均勻平鋪設置在所述的絕緣板上。Preferably, the first coil is evenly laid on the insulating plate.
優選地，所述的風扇設置在所述的第二線圈元件上方的所述的圓柱筒支架上。Preferably, the fan is disposed on the cylindrical bracket above the second coil element.
優選地，所述的該絕緣柱腔體內部空間通過該絕緣板上的開口與所述容器腔體相通；所述的第一線圈設置在該絕緣柱腔體周邊；所述絕緣柱腔體內部設有反應氣體注入口。Preferably, the inner space of the insulating column cavity communicates with the container cavity through an opening on the insulating plate; the first coil is disposed around the insulating column cavity; and the insulating column cavity is internally A reaction gas injection port is provided.
優選地，每個所述的導流環截面呈三角形。Preferably, each of said flow guiding rings has a triangular cross section.
優選地，所述的導流環截面呈梯形。Preferably, the flow guiding ring has a trapezoidal cross section.
優選地，所述的多個導流環分別等間距疊加設置在所述的圓柱筒支架內壁。Preferably, the plurality of flow guiding rings are respectively disposed at equal intervals on the inner wall of the cylindrical bracket.
優選地，所述的多個導流環的斜表面與所述的第二線圈相對應設置；所述的多個導流環與所述的第二線圈之間設有間隙。Preferably, the inclined surface of the plurality of air guiding rings is disposed corresponding to the second coil; and a gap is formed between the plurality of air guiding rings and the second coil.
優選地，每個所述的導流環採用塑膠製成。Preferably, each of said flow guiding rings is made of plastic.
一種感應耦合電漿體反應器，設有容器腔體，其特點是，該反應器還設有感應耦合電漿體陶瓷窗冷卻裝置；所述的感應耦合電漿體陶瓷窗冷卻裝置包含： 圓柱筒支架； 絕緣板，所述的絕緣板的頂部與所述的圓柱筒支架底部通過支撐部件固定連接，該絕緣板與該圓柱筒支架之間設有間隙；該絕緣板的底部與所述的容器腔體頂部匹配連接； 第一線圈，設置在所述的圓柱筒支架內； 第二線圈元件，設置在所述的絕緣板中部； 風扇，固定設置在所述的圓柱筒支架內頂部； 多個導流環，均勻環繞設置在所述的圓柱筒支架內壁，環繞設置在所述的第二線圈元件周邊。An inductively coupled plasma reactor is provided with a container cavity, characterized in that the reactor is further provided with an inductively coupled plasma ceramic window cooling device; the inductively coupled plasma ceramic window cooling device comprises: a cylinder The bottom of the insulating plate is fixedly connected to the bottom of the cylindrical support by a support member, and a gap is provided between the insulating plate and the cylindrical support; the bottom of the insulating plate is a top of the container cavity is matched; a first coil is disposed in the cylindrical support; a second coil component is disposed in the middle of the insulating plate; and a fan is fixedly disposed on the top of the cylindrical bracket; The air guiding ring is evenly disposed around the inner wall of the cylindrical bracket, and is disposed around the circumference of the second coil component.
優選地，所述的第一線圈均勻平鋪設置在所述的絕緣板上。Preferably, the first coil is evenly laid on the insulating plate.
優選地，所述的風扇設置在所述的第二線圈元件上方的所述的圓柱筒支架上。Preferably, the fan is disposed on the cylindrical bracket above the second coil element.
優選地，所述的第二線圈元件包含：絕緣柱腔體，以及繞置在所述的絕緣柱腔體外部的第二線圈；所述的絕緣柱腔體設置在所述的絕緣板中部，該絕緣柱腔體內部通過該絕緣板與所述容器腔體相通；所述的第一線圈設置在該絕緣柱腔體周邊；所述絕緣柱腔體內部設有注入口。Preferably, the second coil component comprises: an insulating post cavity, and a second coil wound around the insulating post cavity; the insulating post cavity is disposed in the middle of the insulating plate, The inside of the insulating column cavity communicates with the container cavity through the insulating plate; the first coil is disposed around the insulating column cavity; and the insulating column cavity is internally provided with an injection port.
優選地，每個所述的導流環上表面包括傾斜面，所述傾斜面沿外側圓柱筒支架向中間絕緣柱腔體方向逐漸向下傾斜。Preferably, each of the upper surfaces of the guide ring includes an inclined surface that gradually slopes downward toward the intermediate insulating cylinder cavity along the outer cylindrical support.
優選地，所述的多個導流環分別等間距疊加設置在所述的圓柱筒支架內壁。Preferably, the plurality of flow guiding rings are respectively disposed at equal intervals on the inner wall of the cylindrical bracket.
優選地，所述的多個導流環的斜表面與所述的第二線圈相對應設置；所述的多個導流環與所述的第二線圈之間設有間隙。Preferably, the inclined surface of the plurality of air guiding rings is disposed corresponding to the second coil; and a gap is formed between the plurality of air guiding rings and the second coil.
本發明與習知技術相比具有以下優點： 本發明通過在感應耦合電漿體陶瓷窗內設置導流環組件，及截面呈一對直角三角形或一對直銷梯形的多個導流環；能夠使得感應耦合電漿體陶瓷窗充分冷卻，確保感應耦合電漿體陶瓷窗及與其下部結合的感應耦合電漿體反應器的溫差降低，使得經TSV蝕刻後的產品質量穩定，保證蝕刻的均勻性。The present invention has the following advantages over the prior art: The present invention provides a flow guiding ring assembly in an inductively coupled plasma ceramic window, and a plurality of flow guiding rings having a pair of right triangles or a pair of direct trapezoids in cross section; The inductively coupled plasma ceramic window is sufficiently cooled to ensure that the temperature difference between the inductively coupled plasma ceramic window and the inductively coupled plasma reactor combined with the lower portion thereof is reduced, so that the quality of the product after TSV etching is stable, and the uniformity of etching is ensured. .
以下結合附圖，通過詳細說明一個較佳的具體實施例，對本發明做進一步闡述。The present invention will be further described below in detail with reference to the accompanying drawings.
如圖1所示，一種感應耦合電漿體陶瓷窗冷卻裝置，該裝置包含：圓柱筒支架10；與圓柱筒支架10連接的絕緣板20；均勻設置在絕緣板20上的第一線圈30；設置在絕緣板20上方中部的第二線圈元件40；設置在圓柱筒支架10內頂部的風扇50；環繞設置在第二線圈元件40、風扇50周邊的多個導流環60。As shown in Figure 1, an inductively coupled plasma ceramic window cooling device, the device comprises: a cylindrical tube holder 10; an insulating plate 20 connected to the cylindrical tube holder 10; a first coil 30 uniformly disposed on the insulating plate 20; A second coil element 40 disposed at a middle portion above the insulating plate 20; a fan 50 disposed at a top portion of the cylindrical holder 10; and a plurality of flow guiding rings 60 disposed around the second coil member 40 and the fan 50.
圓柱筒支架10橫截面呈環形，圓柱筒支架10與絕緣板20之間設有間隙，本實施例中，圓柱筒支架10與絕緣板20通過支撐部件固定連接。The cylindrical tube holder 10 has a circular cross section, and a gap is provided between the cylindrical tube holder 10 and the insulating plate 20. In this embodiment, the cylindrical tube holder 10 and the insulating plate 20 are fixedly connected by a supporting member.
如圖2所示，第二線圈元件40包含：絕緣柱腔體41，及與繞置在絕緣柱腔體41外部的第二線圈42。絕緣柱腔體41設置在絕緣板20中部，第一線圈30設置在該絕緣柱腔體41周邊。第一線圈30均勻平鋪設置在絕緣板20上。As shown in FIG. 2, the second coil component 40 includes an insulating post cavity 41 and a second coil 42 wound around the outside of the insulating post cavity 41. The insulating post cavity 41 is disposed in the middle of the insulating plate 20, and the first coil 30 is disposed around the insulating post cavity 41. The first coil 30 is evenly laid on the insulating plate 20.
絕緣柱腔體41通過絕緣板20與感應耦合電漿體反應器100的容器腔體110相通；通過設置在絕緣柱腔體41內的注入口，處理氣體通過絕緣柱腔體41、絕緣板20流入容器腔體110內。The insulating column cavity 41 communicates with the container cavity 110 of the inductively coupled plasma reactor 100 through the insulating plate 20; the processing gas passes through the insulating column cavity 41 and the insulating plate 20 through an injection port provided in the insulating column cavity 41. It flows into the container cavity 110.
如圖1所示，多個導流環60等間距疊加設置在圓柱筒支架10內壁上。As shown in FIG. 1, a plurality of flow guiding rings 60 are disposed at equal intervals on the inner wall of the cylinder holder 10.
本實施例中，如圖1所示，導流環60截面呈直角三角形。導流環60截面也可呈一對直角梯形。In this embodiment, as shown in FIG. 1, the flow guiding ring 60 has a right-angled triangle in cross section. The cross section of the guide ring 60 can also be a pair of right-angled trapezoids.
如圖1所示，多個導流環60的斜截面601與第二線圈42相對應設置；多個導流環60與第二線圈42之間設有間隙。能夠保證風扇50在工作時，既能夠為第二線圈元件40降溫，又能夠為第一線圈30降溫。As shown in FIG. 1, the oblique section 601 of the plurality of flow guiding rings 60 is disposed corresponding to the second coil 42; a gap is provided between the plurality of flow guiding rings 60 and the second coil 42. It is possible to ensure that the temperature of the second coil element 40 is lowered while the fan 50 is operating, and the temperature of the first coil 30 can be lowered.
如圖3所示，本發明提供的一種感應耦合電漿體陶瓷窗冷卻裝置與感應耦合電漿體反應器100的容器腔體110連接，完成工作。As shown in FIG. 3, an inductively coupled plasma ceramic window cooling device provided by the present invention is connected to the container cavity 110 of the inductively coupled plasma reactor 100 to complete the work.
感應耦合電漿體反應器100具體包含：容器腔體110、基座120、射頻偏壓電源130、排氣泵140、一對噴淋頭150及射頻源電源160。The inductively coupled plasma reactor 100 specifically includes a container cavity 110, a susceptor 120, a radio frequency bias power source 130, an exhaust pump 140, a pair of shower heads 150, and a radio frequency source power source 160.
其中，容器腔體110頂部與感應耦合電漿體陶瓷窗冷卻裝置的絕緣板20採用支撐部件連接，使得容器腔體110與絕緣板20之間設有間隙；基座120設置在容器腔體110內；射頻偏壓電源130設置在該容器腔體110外部，並與基座120連接；排氣泵140設置在該容器腔體110底部；一對噴淋頭150分別設置在容器腔體110兩側；射頻源電源160分別與感應耦合電漿體陶瓷窗冷卻裝置的第一線圈30、第二線圈42連接。The insulating plate 20 of the top of the container cavity 110 and the inductively coupled plasma ceramic window cooling device are connected by a supporting member, so that a gap is provided between the container cavity 110 and the insulating plate 20; the base 120 is disposed in the container cavity 110. The RF bias power supply 130 is disposed outside the container cavity 110 and connected to the base 120; the exhaust pump 140 is disposed at the bottom of the container cavity 110; and a pair of shower heads 150 are respectively disposed in the container cavity 110 The RF source power source 160 is respectively connected to the first coil 30 and the second coil 42 of the inductively coupled plasma ceramic window cooling device.
在實際應用中，具體工作原理如下：In practical applications, the specific working principle is as follows:
感應耦合電漿體陶瓷窗冷卻裝置的圓柱筒支架10與絕緣板20通過支撐部件固定連接，同時圓柱筒支架10與絕緣板20之間設有間隙。本實施例中，風扇50轉動時，帶動圓柱筒支架10內空氣流通，並且將通過圓柱筒支架10與絕緣板20之間的間隙將流通的空氣排出，實現感應耦合電漿體陶瓷窗冷卻裝置內的空氣流通。The cylindrical tube holder 10 of the inductively coupled plasma ceramic window cooling device and the insulating plate 20 are fixedly connected by a support member, and a gap is provided between the cylindrical tube holder 10 and the insulating plate 20. In this embodiment, when the fan 50 rotates, the air in the cylinder holder 10 is circulated, and the air flowing through the gap between the cylinder holder 10 and the insulating plate 20 is discharged to realize the inductively coupled plasma ceramic window cooling device. The air inside is circulated.
感應耦合電漿體陶瓷窗冷卻裝置的絕緣板20與感應耦合電漿體反應器100的容器腔體110連接；基座120設置在該容器腔體110內。待蝕刻晶體片200設置在該基座120上；基座120與設置在容器腔體110外部的射頻偏壓電源130連接；當基座120通電後，使得待蝕刻晶體片200能夠固定吸附在基座120上。容器腔體110兩側分別設有噴淋頭150；射頻源電源160分別為第一線圈30、第二線圈42提供電源。容器腔體110底部設有排氣泵140，在感應耦合電漿體反應器100正常工作時，通過噴淋頭150將氣體充入容器腔體110內，通過該排氣泵140將反應後的氣體排出，維持容器腔體110內氣壓穩定。The insulating plate 20 of the inductively coupled plasma ceramic window cooling device is coupled to the container cavity 110 of the inductively coupled plasma reactor 100; the susceptor 120 is disposed within the container cavity 110. The crystal piece 200 to be etched is disposed on the susceptor 120; the susceptor 120 is connected to the RF bias power source 130 disposed outside the container cavity 110; when the susceptor 120 is energized, the crystal piece 200 to be etched can be fixedly adsorbed on the base. On the seat 120. A shower head 150 is disposed on each side of the container cavity 110; the RF source power supply 160 supplies power to the first coil 30 and the second coil 42, respectively. An exhaust pump 140 is disposed at the bottom of the container cavity 110. When the inductively coupled plasma reactor 100 is normally operated, gas is charged into the container cavity 110 through the showerhead 150, and the reaction is performed by the exhaust pump 140. The gas is discharged to maintain the gas pressure in the container chamber 110 stable.
絕緣板20底部與感應耦合電漿體反應器100的容器腔體110密閉連接，使得容器腔體110內部形成一個氣密的真空封閉空間。當射頻源電源160分別為第一線圈30、第二線圈42提供電源同時，處理氣體通過噴淋頭150注入容器腔體110內，同時在絕緣柱腔體41內設有注入口使得處理氣體通過絕緣柱腔體41、絕緣板20流入容器腔體110內，使得處理氣體在容器腔體110內形成電漿體對待蝕刻晶體片200進行蝕刻。本發明中，第一線圈30、第二線圈42分別形成的電磁場經疊加後，使得電磁場分佈更加均勻，則處理氣體通過噴淋頭150、絕緣柱腔體41內注入口注入容器腔體110內能夠形成均勻的電漿體300分佈，從而對待蝕刻晶體片200進行處理。The bottom of the insulating plate 20 is hermetically connected to the container cavity 110 of the inductively coupled plasma reactor 100 such that an interior of the container cavity 110 forms an airtight vacuum enclosure. When the RF source power supply 160 supplies power to the first coil 30 and the second coil 42, respectively, the processing gas is injected into the container cavity 110 through the shower head 150, and an injection port is provided in the insulating column cavity 41 to allow the process gas to pass. The insulating column cavity 41 and the insulating plate 20 flow into the container cavity 110, so that the processing gas forms a plasma in the container cavity 110 to etch the crystal piece 200 to be etched. In the present invention, after the electromagnetic fields formed by the first coil 30 and the second coil 42 are superimposed, the electromagnetic field distribution is more uniform, and the processing gas is injected into the container cavity 110 through the sprinkler 150 and the injection port in the insulating column cavity 41. A uniform distribution of the plasma 300 can be formed to treat the crystal piece 200 to be etched.
風扇50在工作時，圓柱筒支架10內氣流的運動，由於多個導流環60的斜截面601與第二線圈42的相對設置，使得絕緣柱腔體41周邊能夠充分感受到氣流的運動，從而實現降低絕緣柱腔體41的工作溫度。實現感應耦合電漿體陶瓷窗冷卻裝置內部溫度的有效降低，縮小感應耦合電漿體陶瓷窗冷卻裝置內部溫度與感應耦合電漿體反應器100的容器腔體110內部溫差，避免由於二者溫差過大，導致絕緣板20斷裂現象出現。When the fan 50 is in operation, the movement of the airflow in the cylindrical cylinder bracket 10, due to the relative arrangement of the oblique section 601 of the plurality of air guiding rings 60 and the second coil 42, allows the airflow movement to be fully felt around the insulating cylinder cavity 41. Thereby, the operating temperature of the insulating column cavity 41 is lowered. The effective reduction of the internal temperature of the inductively coupled plasma ceramic window cooling device is achieved, and the internal temperature difference between the inductively coupled plasma ceramic window cooling device and the internal cavity of the inductively coupled plasma reactor 100 is reduced to avoid the temperature difference between the two. If it is too large, the insulation plate 20 is broken.
本實施例中，採用石英或二氧化矽製成絕緣柱腔體41。本實施例中，每個導流環60採用塑膠製成，從而避免對第一線圈30、第二線圈42產生電磁場分佈的影響。In the present embodiment, the insulating column cavity 41 is made of quartz or ruthenium dioxide. In this embodiment, each of the flow guiding rings 60 is made of plastic to avoid the influence of the electromagnetic field distribution on the first coil 30 and the second coil 42.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹，但應當認識到上述的描述不應被認為是對本發明的限制。在本領域中具有通常知識者閱讀了上述內容後，對於本發明的多種修改和替代都將是顯而易見的。因此，本發明的保護範圍應由所附的請求項來限定。Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those of ordinary skill in the art. Accordingly, the scope of the invention should be defined by the appended claims.
10‧‧‧圓柱筒支架
100‧‧‧感應耦合電漿體反應器
110‧‧‧容器腔體
120‧‧‧基座
130‧‧‧射頻偏壓電源
140‧‧‧排氣泵
150‧‧‧噴淋頭
160‧‧‧射頻源電源
20‧‧‧絕緣板
200‧‧‧待蝕刻晶體片
30‧‧‧第一線圈
300‧‧‧電漿體
40‧‧‧第二線圈元件
41‧‧‧絕緣柱腔體
42‧‧‧第二線圈
50‧‧‧風扇
60‧‧‧導流環
601‧‧‧面10‧‧‧Cylinder bracket
100‧‧‧Inductively coupled plasma reactor
110‧‧‧ container cavity
120‧‧‧Base
130‧‧‧RF bias power supply
140‧‧‧Exhaust pump
150‧‧‧Sprinkler
160‧‧‧RF source power supply
20‧‧‧Insulation board
200‧‧‧Ozone wafer to be etched
30‧‧‧First coil
300‧‧‧Electroplast
40‧‧‧second coil component
41‧‧‧Insulated column cavity
42‧‧‧second coil
50‧‧‧fan
60‧‧‧Guide ring
601‧‧‧ face
圖1為本發明一種感應耦合電漿體陶瓷窗冷卻裝置的主視截面圖。 圖2為本發明一種感應耦合電漿體陶瓷窗冷卻裝置的局部立體圖。 圖3為本發明一種感應耦合電漿體陶瓷窗冷卻裝置的實施例示意圖。1 is a front cross-sectional view of an inductively coupled plasma ceramic window cooling device of the present invention. 2 is a partial perspective view of an inductively coupled plasma ceramic window cooling device of the present invention. 3 is a schematic view of an embodiment of an inductively coupled plasma ceramic window cooling device of the present invention.
10‧‧‧圓柱筒支架 10‧‧‧Cylinder bracket
20‧‧‧絕緣板 20‧‧‧Insulation board
30‧‧‧第一線圈 30‧‧‧First coil
40‧‧‧第二線圈元件 40‧‧‧second coil component
41‧‧‧絕緣柱腔體 41‧‧‧Insulated column cavity
42‧‧‧第二線圈 42‧‧‧second coil
50‧‧‧風扇 50‧‧‧fan
60‧‧‧導流環 60‧‧‧Guide ring
601‧‧‧面 601‧‧‧ face
Claims (16)
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| KR101845312B1 (en) | 2016-11-28 | 2018-04-05 | 피에스케이 주식회사 | Plasma source and substrate treatment apparatus including the same |
| CN114520138A (en) * | 2020-11-18 | 2022-05-20 | 中国科学院微电子研究所 | Insulating window, reaction chamber and inductively coupled plasma processing device |
| CN115602406A (en) * | 2021-07-09 | 2023-01-13 | 北京北方华创微电子装备有限公司（Cn） | Coil device for generating plasma and semiconductor processing equipment |
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| JPH08306633A (en) * | 1995-05-10 | 1996-11-22 | Anelva Corp | Plasma treatment equipment and plasma treatment method |
| TW278204B (en) * | 1995-06-07 | 1996-06-11 | Materials Research Corp | Plasma sputter etching system with reduced particle contamination |
| US6326597B1 (en) * | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
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