TWI569067B - Display panel - Google Patents
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- TWI569067B TWI569067B TW104109799A TW104109799A TWI569067B TW I569067 B TWI569067 B TW I569067B TW 104109799 A TW104109799 A TW 104109799A TW 104109799 A TW104109799 A TW 104109799A TW I569067 B TWI569067 B TW I569067B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2074—Display of intermediate tones using sub-pixels
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- Theoretical Computer Science (AREA)
- Liquid Crystal (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本揭露是有關於一種顯示面板。 The disclosure relates to a display panel.
因應行動裝置面板的發展趨勢，目前顯示面板的解析度(Resolution)和畫素密度(Pixels per inch；PPI)都愈來愈高。由於畫素密度愈來愈高，導致每個子畫素(Sub pixel)的尺寸愈來愈小。然而子畫素中主動元件的尺寸無法因應子畫素縮小而微縮的情況之下，會導致子畫素中的透光區域下降，進而使得面板的開口率(Aperture ratio；AR)下降，而開口率下降會導致面板的穿透率下降，進而嚴重影響顯示器的亮度。 In response to the trend of mobile device panels, the resolution and pixel density (PPI) of display panels are increasing. As the pixel density becomes higher and higher, the size of each subpixel is getting smaller and smaller. However, in the case where the size of the active component in the sub-pixel cannot be reduced in accordance with the reduction of the sub-pixel, the light-transmitting region in the sub-pixel is lowered, and the aperture ratio (AR) of the panel is lowered, and the opening is opened. A drop in the rate will result in a decrease in the transmittance of the panel, which in turn will seriously affect the brightness of the display.
在降低面板開口率的因素中，其中一個具有代表性的因素就是黑色矩陣圓角(Black matrix rounding；BM rounding)對面板開口率所帶來的衝擊。在黑色矩陣的微影製程(Photolithography process)時，由於光學繞射和製程限制，會導致黑色矩陣於圖案化後在開口區域的角落無法形成直角，而會在開口區域的角落形成圓角區域(Rounding area)。當有圓角區域形成時，會降低開口率。當畫素密度提高時，黑色矩陣圓角區域占開口區域的比例會 愈來愈高，進而降低面板開口率。 Among the factors that reduce the panel aperture ratio, one of the representative factors is the impact of the black matrix rounding (BM rounding) on the panel aperture ratio. In the black matrix photolithography process, due to optical diffraction and process limitations, the black matrix cannot form a right angle at the corner of the open area after patterning, and a rounded area is formed at the corner of the open area ( Rounding area). When a rounded area is formed, the aperture ratio is lowered. When the pixel density is increased, the ratio of the black matrix fillet area to the open area will Increasingly higher, which in turn reduces the panel opening rate.
先前技術解決圓角區域的方式，是利用光罩及曝光補償的方式來降低圓角區域的影響，透過光學模擬來決定補償的範圍和程度。然而此種解決方式常因黑色矩陣材料與製程的限制，使得光學模擬的結果與實際產品有相當大的差異，因此需要透過不斷的模擬及試作，以確認符合產品設計的規格。這個過程需要耗費大量的成本及時間。因此，如何有效的降低成本及時間，實為一重要的課題。 The prior art solves the rounded area by using a mask and exposure compensation to reduce the effect of the fillet area, and optical simulation to determine the extent and extent of compensation. However, such a solution is often limited by the limitations of the black matrix material and the process, so that the results of the optical simulation are quite different from the actual products. Therefore, it is necessary to confirm the specifications of the product design through continuous simulation and trial production. This process requires a lot of cost and time. Therefore, how to effectively reduce costs and time is an important issue.
本發明之一技術態樣是在提供一種顯示面板，用以改善以上先前技術所提到的問題。 One aspect of the present invention is to provide a display panel for improving the problems mentioned in the prior art.
根據本發明一或多個實施方式，一種顯示面板包括主動元件陣列基板、子畫素、黑色矩陣圖案、遮光金屬層、對向基板與顯示介質。子畫素設置於主動元件陣列基板上。子畫素包括切換元件與畫素電極。畫素電極電性連接切換元件。黑色矩陣圖案包括本體部以及島部，並具有複數個開口區域，本體部部分圍繞開口區域，本體部與島部之間具有斷開區域，開口區域與畫素電極至少部分相對應。遮光金屬層在主動元件陣列基板上的正投影，與斷開區域在主動元件陣列基板上的正投影至少部分重疊。對向基板相對主動元件陣列基板設置。顯示介質設置於主動元件陣列基板與對向基板之間。 According to one or more embodiments of the present invention, a display panel includes an active device array substrate, a sub-pixel, a black matrix pattern, a light-shielding metal layer, an opposite substrate, and a display medium. The sub-pixels are disposed on the active device array substrate. The sub-pixel includes a switching element and a pixel electrode. The pixel electrode is electrically connected to the switching element. The black matrix pattern includes a body portion and an island portion, and has a plurality of open regions, the body portion partially surrounds the open region, and the body portion and the island portion have a disconnected region, and the open region at least partially corresponds to the pixel electrode. The orthographic projection of the light-shielding metal layer on the active device array substrate at least partially overlaps the orthographic projection of the broken region on the active device array substrate. The opposite substrate is disposed relative to the active device array substrate. The display medium is disposed between the active device array substrate and the opposite substrate.
在本發明之一或多個實施方式中，上述之黑色 矩陣圖案設置於對向基板。 In one or more embodiments of the present invention, the above black The matrix pattern is disposed on the opposite substrate.
在本發明之一或多個實施方式中，上述之黑色矩陣圖案設置於主動元件陣列基板。 In one or more embodiments of the present invention, the black matrix pattern described above is disposed on the active device array substrate.
在本發明之一或多個實施方式中，上述之遮光金屬層電性連接切換元件，作為數據線用。 In one or more embodiments of the present invention, the light shielding metal layer is electrically connected to the switching element as a data line.
在本發明之一或多個實施方式中，上述之顯示面板更包括數據線，此數據線電性連接切換元件。上述之遮光金屬層與數據線至少部分重疊。 In one or more embodiments of the present invention, the display panel further includes a data line electrically connected to the switching element. The light shielding metal layer described above at least partially overlaps the data line.
在本發明之一或多個實施方式中，上述之遮光金屬層為浮動電位。 In one or more embodiments of the present invention, the light shielding metal layer is a floating potential.
在本發明之一或多個實施方式中，上述之斷開區域的數量為複數個，且遮光金屬層一併與斷開區域重疊。 In one or more embodiments of the present invention, the number of the disconnected regions is plural, and the light shielding metal layers are collectively overlapped with the disconnected regions.
在本發明之一或多個實施方式中，上述之斷開區域的數量為複數個。上述之遮光金屬層的數量亦為複數個。遮光金屬層分別與斷開區域重疊。 In one or more embodiments of the present invention, the number of the disconnected regions described above is plural. The number of the above-mentioned light shielding metal layers is also plural. The light shielding metal layers respectively overlap the broken regions.
在本發明之一或多個實施方式中，上述之本體部至少與切換元件重疊。上述之島部至少與數據線重疊。 In one or more embodiments of the present invention, the body portion is overlapped at least with the switching element. The island portion described above overlaps at least with the data line.
在本發明之一或多個實施方式中，上述之遮光金屬層的寬度大於或等於島部的寬度。 In one or more embodiments of the present invention, the width of the light shielding metal layer is greater than or equal to the width of the island portion.
根據本發明一或多個實施方式，一種顯示面板包括主動元件陣列基板、複數個子畫素、黑色矩陣圖案、遮光金屬層、對向基板與顯示介質。子畫素設置於主動元件陣列基板上。每一子畫素均包括切換元件與畫素電極。畫素電極電性連接切換元件。黑色矩陣圖案具有複數個開口區域。 開口區域分別與畫素電極至少部分相對應，且任兩相鄰之開口區域之間具有至少一連通區域以連通兩者。遮光金屬層在主動元件陣列基板上的正投影，與連通區域在主動元件陣列基板上的正投影至少部分重疊。對向基板相對主動元件陣列基板設置。顯示介質設置於主動元件陣列基板與對向基板之間。 According to one or more embodiments of the present invention, a display panel includes an active device array substrate, a plurality of sub-pixels, a black matrix pattern, a light-shielding metal layer, an opposite substrate, and a display medium. The sub-pixels are disposed on the active device array substrate. Each sub-pixel includes a switching element and a pixel electrode. The pixel electrode is electrically connected to the switching element. The black matrix pattern has a plurality of open areas. The open areas respectively correspond at least partially to the pixel electrodes, and at least one communication area between any two adjacent open areas to communicate the two. The orthographic projection of the light-shielding metal layer on the active device array substrate at least partially overlaps the orthographic projection of the communication region on the active device array substrate. The opposite substrate is disposed relative to the active device array substrate. The display medium is disposed between the active device array substrate and the opposite substrate.
在本發明之一或多個實施方式中，上述之黑色矩陣圖案設置於對向基板。 In one or more embodiments of the present invention, the black matrix pattern described above is disposed on the opposite substrate.
在本發明之一或多個實施方式中，上述之黑色矩陣圖案設置於主動元件陣列基板。 In one or more embodiments of the present invention, the black matrix pattern described above is disposed on the active device array substrate.
在本發明之一或多個實施方式中，上述之遮光金屬層電性連接切換元件其中至少一，作為數據線用。 In one or more embodiments of the present invention, the light-shielding metal layer is electrically connected to at least one of the switching elements as a data line.
在本發明之一或多個實施方式中，上述之顯示面板更包括數據線，此數據線電性連接切換元件其中至少一。上述之遮光金屬層與數據線至少部分重疊。 In one or more embodiments of the present invention, the display panel further includes a data line electrically connected to at least one of the switching elements. The light shielding metal layer described above at least partially overlaps the data line.
在本發明之一或多個實施方式中，上述之遮光金屬層為浮動電位。 In one or more embodiments of the present invention, the light shielding metal layer is a floating potential.
在本發明之一或多個實施方式中，兩相鄰之開口區域之間的連通區域的數量為複數個，且遮光金屬層一併與連通區域重疊。 In one or more embodiments of the present invention, the number of connected regions between two adjacent open regions is plural, and the light shielding metal layers are collectively overlapped with the connected regions.
在本發明之一或多個實施方式中，兩相鄰之開口區域之間的連通區域的數量為複數個。遮光金屬層的數量亦為複數個。遮光金屬層分別與連通區域重疊。 In one or more embodiments of the present invention, the number of connected regions between two adjacent open regions is plural. The number of light-shielding metal layers is also plural. The light shielding metal layers respectively overlap the communication regions.
在本發明之一或多個實施方式中，上述之黑色 矩陣圖案包括本體部與島部。本體部至少與切換元件重疊。島部與本體部分開，使得本體部與島部之間存在連通區域。 In one or more embodiments of the present invention, the above black The matrix pattern includes a body portion and an island portion. The body portion overlaps at least the switching element. The island portion is partially separated from the body such that there is a communication region between the body portion and the island portion.
在本發明之一或多個實施方式中，上述之遮光金屬層的寬度大於或等於島部的寬度。 In one or more embodiments of the present invention, the width of the light shielding metal layer is greater than or equal to the width of the island portion.
2-2‧‧‧線段 2-2‧‧‧ segments
5-5‧‧‧線段 5-5‧‧‧ segments
8-8‧‧‧線段 8-8‧‧‧ segments
100‧‧‧顯示面板 100‧‧‧ display panel
110‧‧‧主動元件陣列基板 110‧‧‧Active component array substrate
120‧‧‧子畫素 120‧‧‧Subpixels
122‧‧‧切換元件 122‧‧‧Switching components
124‧‧‧畫素電極 124‧‧‧pixel electrodes
126‧‧‧掃描線 126‧‧‧ scan line
128‧‧‧數據線 128‧‧‧Data line
130‧‧‧黑色矩陣圖案 130‧‧‧Black matrix pattern
132‧‧‧本體部 132‧‧‧ Body Department
134‧‧‧島部 134‧‧‧ Island Department
140‧‧‧對向基板 140‧‧‧ opposite substrate
150‧‧‧顯示介質 150‧‧‧Display media
160‧‧‧保護層 160‧‧‧Protective layer
170‧‧‧彩色光阻 170‧‧‧Color resist
180‧‧‧共同電極 180‧‧‧Common electrode
190‧‧‧遮光金屬層 190‧‧‧ shading metal layer
C‧‧‧通道層 C‧‧‧ channel layer
D‧‧‧汲極 D‧‧‧汲
G‧‧‧閘極 G‧‧‧ gate
GI‧‧‧閘介電層 GI‧‧‧ gate dielectric layer
I1‧‧‧正投影 I1‧‧‧ orthographic projection
I2‧‧‧正投影 I2‧‧‧ orthographic projection
L‧‧‧斷開區域 L‧‧‧Disconnected area
LD‧‧‧雙箭頭 LD‧‧‧ double arrow
O‧‧‧開口區域 O‧‧‧Open area
P‧‧‧部分 Part P‧‧‧
R‧‧‧圓角區域 R‧‧‧Round Area
S‧‧‧源極 S‧‧‧ source
T‧‧‧貫穿孔 T‧‧‧through hole
WP‧‧‧寬度 WP‧‧‧Width
WI‧‧‧寬度 WI‧‧‧Width
第1圖繪示依照本發明一實施方式之顯示面板的局部俯視圖。 1 is a partial plan view of a display panel in accordance with an embodiment of the present invention.
第2圖繪示沿第1圖之線段2-2的剖面圖。 Figure 2 is a cross-sectional view taken along line 2-2 of Figure 1.
第3圖繪示依照本發明另一實施方式之顯示面板的剖面圖，其剖面位置與第2圖相同。 Fig. 3 is a cross-sectional view showing a display panel according to another embodiment of the present invention, the cross-sectional position of which is the same as that of Fig. 2.
第4圖繪示依照本發明另一實施方式之顯示面板的局部俯視圖。 4 is a partial plan view of a display panel in accordance with another embodiment of the present invention.
第5圖繪示沿第4圖之線段5-5的剖面圖。 Figure 5 is a cross-sectional view taken along line 5-5 of Figure 4.
第6圖繪示依照本發明另一實施方式之顯示面板的剖面圖，其剖面位置與第5圖相同。 Figure 6 is a cross-sectional view showing a display panel according to another embodiment of the present invention, the cross-sectional position of which is the same as that of Figure 5.
第7圖繪示依照本發明另一實施方式之顯示面板的局部俯視圖。 FIG. 7 is a partial plan view of a display panel according to another embodiment of the present invention.
第8圖繪示沿第7圖之線段8-8的剖面圖。 Figure 8 is a cross-sectional view taken along line 8-8 of Figure 7.
第9圖繪示依照本發明另一實施方式之顯示面板的剖面圖，其剖面位置與第8圖相同。 Figure 9 is a cross-sectional view showing a display panel according to another embodiment of the present invention, the cross-sectional position of which is the same as that of Figure 8.
以下將以圖式揭露本發明之複數個實施方式，為明確說明起見，許多實務上的細節將在以下敘述中一併說明。然而，應瞭解到，這些實務上的細節不應用以限制本發明。也就是說，在本發明部分實施方式中，這些實務上的細節是非必要的。此外，為簡化圖式起見，一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings.
第1圖繪示依照本發明一實施方式之顯示面板100的局部俯視圖。第2圖繪示沿第1圖之線段2-2的剖面圖。如第1~2圖所示，顯示面板100包括主動元件陣列基板110、複數個子畫素120、黑色矩陣圖案130、遮光金屬層、對向基板140與顯示介質150。子畫素120設置於主動元件陣列基板110上。對向基板140相對主動元件陣列基板110設置。顯示介質150設置於主動元件陣列基板110與對向基板140之間。 FIG. 1 is a partial plan view of a display panel 100 in accordance with an embodiment of the present invention. Figure 2 is a cross-sectional view taken along line 2-2 of Figure 1. As shown in FIGS. 1 to 2, the display panel 100 includes an active device array substrate 110, a plurality of sub-pixels 120, a black matrix pattern 130, a light-shielding metal layer, a counter substrate 140, and a display medium 150. The sub-pixel 120 is disposed on the active device array substrate 110. The opposite substrate 140 is disposed relative to the active device array substrate 110. The display medium 150 is disposed between the active device array substrate 110 and the opposite substrate 140.
在本實施方式中，每一子畫素120包括切換元件122與畫素電極124，畫素電極124電性連接切換元件122。黑色矩陣圖案130位於對向基板140並具有複數個開口區域O，每一開口區域O與每一畫素電極124至少部分相對應，使得穿過受畫素電極124影響之顯示介質150的光線，能夠進一步穿過開口區域O，而顯示各子畫素120對應的畫素資料。 In the present embodiment, each sub-pixel 120 includes a switching element 122 and a pixel electrode 124, and the pixel electrode 124 is electrically connected to the switching element 122. The black matrix pattern 130 is located on the opposite substrate 140 and has a plurality of opening regions O, each of the opening regions O correspondingly at least partially corresponding to each of the pixel electrodes 124 such that the light passing through the display medium 150 affected by the pixel electrodes 124 is It is possible to further pass through the opening area O and display the pixel data corresponding to each sub-pixel 120.
在本實施方式中，顯示面板100另包括掃描線126與數據線128位於主動元件陣列基板110上，而上述之切換元件122可為薄膜電晶體。更具體地說，上述之切換元 件122可包括閘極G、閘介電層GI、通道層C、源極S與汲極D。閘極G電性連接掃描線126。閘介電層GI至少部分位於閘極G與通道層C之間。源極S與汲極D位於通道層C的兩側。源極S電性連接數據線128。畫素電極124電性連接汲極D。應了解到，雖然本實施方式將切換元件122繪示為底閘型薄膜電晶體，但此並不限制本發明，實際上切換元件122亦可為其他形式的主動元件，例如頂閘型薄膜電晶體，本發明所屬技術領域中具有通常知識者，應視實際需要，彈性選擇切換元件122的實施方式。 In the embodiment, the display panel 100 further includes a scan line 126 and a data line 128 on the active device array substrate 110, and the switching element 122 may be a thin film transistor. More specifically, the above switching element The device 122 can include a gate G, a gate dielectric layer GI, a channel layer C, a source S, and a drain D. The gate G is electrically connected to the scan line 126. The gate dielectric layer GI is at least partially located between the gate G and the channel layer C. The source S and the drain D are located on both sides of the channel layer C. The source S is electrically connected to the data line 128. The pixel electrode 124 is electrically connected to the drain D. It should be understood that although the switching element 122 is illustrated as a bottom gate type thin film transistor, the present invention does not limit the present invention. In fact, the switching element 122 may also be other types of active components, such as a top gate type thin film. Crystals, which are generally known in the art to which the present invention pertains, should be flexibly selected for implementation of the switching element 122, depending on actual needs.
本實施方式之黑色矩陣圖案130包含本體部132以及與本體部132不相連的複數個島部134，島部134與前述數據線128具有實質相同的長度延伸方向(如雙箭頭LD所標示)，並分別與對應的數據線128部分重疊。由於先前技術的黑色矩陣圖案在經過圖案化製程後，所形成的圓角(Rounding)區域佔開口區域的比例過高，因此本實施方式將黑色矩陣圖案130斷開為本體部132與島部134。由於黑色矩陣圖案130被斷開為本體部132與島部134，因此在製程中，黑色矩陣圖案130可以被過度曝光(over dosing)或過度蝕刻(over etching)，讓後續黑色矩陣圖案130的圓角區域R可大幅減少，並讓開口區域O的面積增加，進而提升顯示面板100的開口率。 The black matrix pattern 130 of the present embodiment includes a body portion 132 and a plurality of island portions 134 that are not connected to the body portion 132. The island portion 134 and the data line 128 have substantially the same length extension direction (as indicated by the double arrow LD). And partially overlapping with the corresponding data line 128, respectively. Since the ratio of the rounded area formed by the prior art black matrix pattern to the open area is too high after the patterning process, the black matrix pattern 130 is broken into the body portion 132 and the island portion 134 in the present embodiment. . Since the black matrix pattern 130 is broken into the body portion 132 and the island portion 134, the black matrix pattern 130 may be over-dosed or over-etched in the process to make the circle of the subsequent black matrix pattern 130 The corner area R can be greatly reduced, and the area of the opening area O is increased, thereby increasing the aperture ratio of the display panel 100.
但是，由於本體部132與島部134分開，因此本體部132與島部134之間會存在斷開區域L。從另一個角度來看，由於斷開區域L會連通兩相鄰的開口區域O，所以斷 開區域L也可以被視為連通兩相鄰之開口區域O的連通區域。由於斷開區域L會漏光，因此為了防止斷開區域L漏光，本實施方式進一步利用遮光金屬層來遮蔽斷開區域L。在本實施方式中，數據線128可應用來作為遮光金屬層。更具體的說，數據線128在主動元件陣列基板110上的正投影I1，會與斷開區域L在主動元件陣列基板110上的正投影I2至少部分重疊，以避免光線透過斷開區域L漏光。 However, since the body portion 132 is separated from the island portion 134, there is a disconnected region L between the body portion 132 and the island portion 134. From another point of view, since the disconnected region L will connect two adjacent open regions O, The open area L can also be regarded as a connected area that connects two adjacent open areas O. Since the disconnection region L leaks light, in order to prevent light leakage in the disconnection region L, the present embodiment further shields the disconnection region L by the light shielding metal layer. In the present embodiment, the data line 128 can be applied as a light-shielding metal layer. More specifically, the orthographic projection I1 of the data line 128 on the active device array substrate 110 at least partially overlaps with the orthographic projection I2 of the broken region L on the active device array substrate 110 to prevent light from leaking through the disconnected region L. .
在本實施方式中，遮光金屬層的寬度可大於或等於島部134的寬度WI。更具體地說，數據線128具有一部分P與斷開區域L重疊，且此部分P的寬度WP可大於或等於島部134的寬度WI，以完整遮蔽斷開區域L。至於數據線128的其他部分，例如與本體部132重疊的部分，若是考慮到製程上線寬與線距的限制，則其寬度可小於部分P的寬度WP。 In the present embodiment, the width of the light shielding metal layer may be greater than or equal to the width WI of the island portion 134. More specifically, the data line 128 has a portion P overlapping the broken region L, and the width WP of this portion P may be greater than or equal to the width WI of the island portion 134 to completely shield the broken region L. As for the other portions of the data line 128, for example, the portion overlapping the body portion 132, the width may be smaller than the width WP of the portion P in consideration of the limitation of the line width and the line pitch on the process.
在本實施方式中，單一數據線128將一併遮蔽複數個斷開區域L。或者說，單一數據線128可一併與複數個斷開區域L重疊。如第2圖所繪示，複數個斷開區域L在主動元件陣列基板110上的正投影I2，會與單一數據線128在主動元件陣列基板110上的正投影I1至少部分重疊。 In the present embodiment, a single data line 128 will collectively shield a plurality of disconnected regions L. Alternatively, the single data line 128 may overlap with a plurality of disconnected regions L. As shown in FIG. 2, the orthographic projection I2 of the plurality of disconnected regions L on the active device array substrate 110 at least partially overlaps with the orthographic projection I1 of the single data line 128 on the active device array substrate 110.
在本實施方式中，本體部132至少與掃描線126以及切換元件122重疊，以遮蔽切換元件122。島部134至少與數據線128部分重疊，且島部134的長度延伸方向(如雙箭頭LD所標示)可與數據線128的長度延伸方向(如雙箭頭LD所標示)大致平行。但此不並限制本發明，實際上黑色矩陣圖案130也可以是其他形狀，只要存在斷開區域L即可。 In the present embodiment, the body portion 132 overlaps at least the scanning line 126 and the switching element 122 to shield the switching element 122. The island portion 134 at least partially overlaps the data line 128, and the length extension direction of the island portion 134 (as indicated by the double arrow LD) may be substantially parallel to the length extension direction of the data line 128 (as indicated by the double arrow LD). However, this does not limit the present invention. Actually, the black matrix pattern 130 may have other shapes as long as the disconnection region L exists.
應瞭解到，以上所述之長度延伸方向應解釋為：「物體的三維尺寸中，最大者的方向。」舉例來說，島部134的長度延伸方向可為島部134之最長邊的延伸方向。 It should be understood that the length extension direction described above should be interpreted as: "the largest of the three-dimensional dimensions of the object." For example, the length extension of the island portion 134 may be the extension of the longest side of the island portion 134. .
在本實施方式中，顯示面板100尚可選擇性的包括保護層160。此保護層160可覆蓋切換元件122、掃描線126與數據線128，以避免這些元件受到環境因素的影響或污染。保護層160中可具有貫穿孔T，藉此讓畫素電極124透過此貫穿孔T而與切換元件122的汲極D電性連接。上述之保護層160的材質可為無機介電材料，例如氮化矽、氧化矽、氮氧化矽或上述之任意組合。上述之保護層160的材質也可以是有機介電材料，例如壓克力系或其他光感保護層材料。此一有機介電材料由於具備良好的流平性，經常也兼具平坦層之功能，可使後續之製程良率提高，並提升顯示面板的性能表現。 In the present embodiment, the display panel 100 can optionally include the protective layer 160. This protective layer 160 can cover the switching element 122, the scan line 126 and the data line 128 to prevent these elements from being affected or contaminated by environmental factors. The protective layer 160 may have a through hole T therein, thereby allowing the pixel electrode 124 to be electrically connected to the drain D of the switching element 122 through the through hole T. The material of the protective layer 160 may be an inorganic dielectric material such as tantalum nitride, hafnium oxide, tantalum oxynitride or any combination thereof. The material of the protective layer 160 may also be an organic dielectric material such as an acrylic or other photo-sensitive protective layer material. Due to the good leveling property, the organic dielectric material often has the function of a flat layer, which can improve the subsequent process yield and improve the performance of the display panel.
在本實施方式中，黑色矩陣圖案130、彩色光阻170與共同電極180可依序設置在對向基板140上。但此並不限制本發明，在本發明其他實施方式中，如第3圖所繪示，黑色矩陣圖案130亦可設置於主動元件陣列基板110上，而成為黑色矩陣圖案130於主動元件陣列基板110(Black matrix On Array；BOA)上的架構。同理，雖然第3圖將黑色矩陣圖案130設置於保護層160上，但此並不限制本發明。在其他實施方式中，平坦層可選擇性設置於保護層上，而黑色矩陣圖案可設置於平坦層上。此外，在其他實施方式中，黑色矩陣圖案亦可以設置在其他層別，例如 可直接設置在主動元件陣列基板上。同理，雖然第2圖將彩色光阻170設置於對向基板140上，但此並不限制本發明。在其他實施方式中，彩色光阻亦可設置於主動元件陣列基板上，而成為彩色光阻於主動元件陣列基板(Color Filter On Array；COA)上的架構。 In the present embodiment, the black matrix pattern 130, the color photoresist 170, and the common electrode 180 may be sequentially disposed on the opposite substrate 140. However, the present invention does not limit the present invention. In other embodiments of the present invention, as shown in FIG. 3, the black matrix pattern 130 may also be disposed on the active device array substrate 110 to form the black matrix pattern 130 on the active device array substrate. Architecture on 110 (Black matrix On Array; BOA). Similarly, although the black matrix pattern 130 is disposed on the protective layer 160 in FIG. 3, this does not limit the present invention. In other embodiments, the planar layer may be selectively disposed on the protective layer, and the black matrix pattern may be disposed on the planar layer. In addition, in other embodiments, the black matrix pattern may also be disposed in other layers, such as It can be directly disposed on the active device array substrate. Similarly, although the second figure has the color resist 170 disposed on the opposite substrate 140, this does not limit the present invention. In other embodiments, the color photoresist can also be disposed on the active device array substrate to form a color photoresist on the Active Filter Array (COA).
上述之主動元件陣列基板110與對向基板140的可為硬質基板或軟質基板。硬質基板可為例如玻璃基板。軟質基板可為例如聚醯亞胺(Polyimide；PI)基板。 The active device array substrate 110 and the opposite substrate 140 may be a rigid substrate or a flexible substrate. The hard substrate may be, for example, a glass substrate. The flexible substrate can be, for example, a polyimide (PI) substrate.
上述之掃描線126與閘極G可屬於同一圖案化導電層，例如第一金屬層。上述之源極S、汲極D與數據線128可屬於同一圖案化導電層，例如第二金屬層。上述之第一金屬層與第二金屬層的材質可為任何金屬，例如：鈦、鉬、鉻、銥、鋁、銅、銀、金或上述之任意組合，其形成方式可為薄膜、微影及蝕刻製程。更具體地說，本段所述之薄膜製程可為物理氣相沉積法，例如濺鍍法。 The scan line 126 and the gate G described above may belong to the same patterned conductive layer, such as the first metal layer. The source S, the drain D and the data line 128 described above may belong to the same patterned conductive layer, such as the second metal layer. The material of the first metal layer and the second metal layer may be any metal, such as titanium, molybdenum, chromium, tantalum, aluminum, copper, silver, gold or any combination thereof, which may be formed by film or lithography. And etching process. More specifically, the thin film process described in this paragraph may be a physical vapor deposition method such as sputtering.
上述之閘介電層GI的材質可為任何介電材料，例如：氮化矽、氧化矽、氮氧化矽、氧化石墨烯、氮化石墨烯、氮氧化石墨烯、聚合物材料或上述之任意組合，其形成方式可為薄膜、微影及蝕刻製程。 The material of the gate dielectric layer GI may be any dielectric material such as tantalum nitride, hafnium oxide, hafnium oxynitride, graphene oxide, graphene nitride, graphene oxide, polymer material or any of the above. The combination can be formed by a film, a lithography, and an etching process.
上述之通道層C的材質可為任何半導體材料，例如：非晶矽、多晶矽、低溫多晶矽、單晶矽、氧化物半導體(oxide semiconductor)、石墨烯或上述之任意組合，其形成方式可為薄膜、微影及蝕刻製程。 The material of the channel layer C may be any semiconductor material, such as amorphous germanium, polycrystalline germanium, low temperature polycrystalline germanium, single crystal germanium, oxide semiconductor, graphene or any combination thereof, which may be formed into a thin film. , lithography and etching processes.
上述之畫素電極124與共同電極180的材質可 為任何導電材料，例如：氧化銦錫、氧化銦鋅、氧化鋅鋁、石墨烯、奈米炭管或上述任意之組合，其形成方式可為薄膜、微影及蝕刻製程。 The material of the pixel electrode 124 and the common electrode 180 described above may be Any conductive material, such as indium tin oxide, indium zinc oxide, zinc aluminum oxide, graphene, carbon nanotubes, or any combination thereof, may be formed by a film, lithography, and etching process.
上述之黑色矩陣圖案130的材質可為任何低反射率的感光材料，例如黑色感光樹脂，其形成方式可為旋轉塗佈及微影製程。 The material of the black matrix pattern 130 may be any low reflectivity photosensitive material, such as a black photosensitive resin, which may be formed by spin coating and lithography.
上述之顯示介質150可為非自發光顯示介質，例如：液晶、電泳顯示介質或上述之任意組合。此外，上述之顯示介質150亦可為自發光顯示介質。舉例來說，當上述顯示面板100為主動矩陣有機發光二極體顯示器(Active-Matrix Organic Light-Emitting Diode Display；AMOLED Display)時，顯示介質150可以被考慮為有機發光二極體中的主動發光層。 The display medium 150 described above may be a non-self-luminous display medium such as a liquid crystal, an electrophoretic display medium, or any combination thereof. In addition, the display medium 150 described above may also be a self-luminous display medium. For example, when the display panel 100 is an Active-Matrix Organic Light-Emitting Diode Display (AMOLED Display), the display medium 150 can be considered as active illumination in the organic light emitting diode. Floor.
第4圖繪示依照本發明另一實施方式之顯示面板100的局部俯視圖。第5圖繪示沿第4圖之線段5-5的剖面圖。本實施方式與前述實施方式的不同點在於：本實施方式並未利用數據線128來作為遮光金屬層，而是另外設置遮光金屬層190來遮蔽斷開區域L。在本實施方式中，遮光金屬層190、掃描線126與閘極G可屬於同一圖案化導電層，例如第一金屬層。但此並不限制本發明，在本發明部分實施方式中，遮光金屬層190亦可為獨立的第三金屬層，其既未與掃描線126和閘極G屬於同一圖案化導電層，亦未與源極S、汲極D和數據線128屬於同一圖案化導電層。 4 is a partial plan view of a display panel 100 in accordance with another embodiment of the present invention. Figure 5 is a cross-sectional view taken along line 5-5 of Figure 4. The present embodiment is different from the above-described embodiment in that the present embodiment does not use the data line 128 as a light-shielding metal layer, but separately provides a light-shielding metal layer 190 to shield the break region L. In the present embodiment, the light-shielding metal layer 190, the scan line 126, and the gate G may belong to the same patterned conductive layer, such as the first metal layer. However, the present invention is not limited thereto. In some embodiments of the present invention, the light-shielding metal layer 190 may also be an independent third metal layer, which is neither in the same patterned conductive layer as the scan line 126 and the gate G, nor The source S, the drain D, and the data line 128 belong to the same patterned conductive layer.
在本實施方式中，由於斷開區域L與數據線128 至少部分重疊，因此遮蔽斷開區域L的遮光金屬層190也會與數據線128至少部分重疊，但彼此並不屬於同一圖案化導電層。此外，遮光金屬層190雖然可與掃描線126和閘極G屬於同一圖案化導電層，但遮光金屬層190可與掃描線126和閘極G電性絕緣，而維持浮動電位，以避免給數據線128帶來過大的電阻電容負載(Resistance-Capacitance loading；RC loading)。 In the present embodiment, due to the disconnection region L and the data line 128 At least partially overlapping, so that the light-shielding metal layer 190 of the shadow-off region L also at least partially overlaps the data lines 128, but does not belong to the same patterned conductive layer. In addition, although the light-shielding metal layer 190 may belong to the same patterned conductive layer as the scan line 126 and the gate G, the light-shielding metal layer 190 may be electrically insulated from the scan line 126 and the gate G, and maintain a floating potential to avoid giving data. Line 128 introduces an excessive resistance-capacitance loading (RC loading).
同樣地，雖然第5圖將黑色矩陣圖案130繪示為設置在對向基板140上。但此並不限制本發明，在本發明其他實施方式中，如第6圖所繪示，黑色矩陣圖案130亦可設置於主動元件陣列基板110上，而成為黑色矩陣圖案130於主動元件陣列基板110(Black matrix On Array；BOA)上的架構。 Similarly, although FIG. 5 illustrates the black matrix pattern 130 as being disposed on the opposite substrate 140. However, in the other embodiments of the present invention, as shown in FIG. 6, the black matrix pattern 130 may also be disposed on the active device array substrate 110 to form the black matrix pattern 130 on the active device array substrate. Architecture on 110 (Black matrix On Array; BOA).
至於其他相關的結構細節，由於均與前述實施方式相同，因此不再重複贅述之。 As for other related structural details, since they are all the same as the foregoing embodiments, the description thereof will not be repeated.
第7圖繪示依照本發明另一實施方式之顯示面板100的局部俯視圖。第8圖繪示沿第7圖之線段8-8的剖面圖。如第7~8圖所示，本實施方式與第4~5圖所繪示之實施方式的不同點在於：第4~5圖所繪示之實施方式是以一遮光金屬層190一併遮蔽複數個斷開區域L，或者說一遮光金屬層190一併與複數個斷開區域L重疊。但本實施方式是利用複數個遮光金屬層190分別遮蔽複數個斷開區域L，或者說分別與複數個斷開區域L重疊。 FIG. 7 is a partial plan view of a display panel 100 in accordance with another embodiment of the present invention. Figure 8 is a cross-sectional view taken along line 8-8 of Figure 7. As shown in the seventh to eighth embodiments, the embodiment is different from the embodiment shown in FIGS. 4 to 5 in that the embodiment shown in FIGS. 4 to 5 is shielded by a light shielding metal layer 190. A plurality of disconnected regions L, or a light-shielding metal layer 190, are overlapped with a plurality of disconnected regions L. However, in the present embodiment, a plurality of light-shielding metal layers 190 are used to shield a plurality of break regions L, or overlap with a plurality of break regions L, respectively.
同樣地，雖然第8圖將黑色矩陣圖案130繪示為 設置在對向基板140上。但此並不限制本發明，在本發明其他實施方式中，如第9圖所繪示，黑色矩陣圖案130亦可設置於主動元件陣列基板110上，而成為黑色矩陣圖案130於主動元件陣列基板110(Black matrix On Array；BOA)上的架構。 Similarly, although Figure 8 depicts the black matrix pattern 130 as It is disposed on the opposite substrate 140. However, in the other embodiments of the present invention, as shown in FIG. 9, the black matrix pattern 130 may also be disposed on the active device array substrate 110 to form the black matrix pattern 130 on the active device array substrate. Architecture on 110 (Black matrix On Array; BOA).
至於其他相關的結構細節，由於均與前述實施方式相同，因此不再重複贅述之。 As for other related structural details, since they are all the same as the foregoing embodiments, the description thereof will not be repeated.
2-2‧‧‧線段 2-2‧‧‧ segments
100‧‧‧顯示面板 100‧‧‧ display panel
120‧‧‧子畫素 120‧‧‧Subpixels
122‧‧‧切換元件 122‧‧‧Switching components
124‧‧‧畫素電極 124‧‧‧pixel electrodes
126‧‧‧掃描線 126‧‧‧ scan line
128‧‧‧數據線 128‧‧‧Data line
130‧‧‧黑色矩陣圖案 130‧‧‧Black matrix pattern
132‧‧‧本體部 132‧‧‧ Body Department
134‧‧‧島部 134‧‧‧ Island Department
C‧‧‧通道層 C‧‧‧ channel layer
D‧‧‧汲極 D‧‧‧汲
G‧‧‧閘極 G‧‧‧ gate
L‧‧‧斷開區域 L‧‧‧Disconnected area
LD‧‧‧雙箭頭 LD‧‧‧ double arrow
O‧‧‧開口區域 O‧‧‧Open area
P‧‧‧部分 Part P‧‧‧
R‧‧‧圓角區域 R‧‧‧Round Area
S‧‧‧源極 S‧‧‧ source
WP‧‧‧寬度 WP‧‧‧Width
WI‧‧‧寬度 WI‧‧‧Width
Claims (20)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| TW104109799A TWI569067B (en) | 2015-03-26 | 2015-03-26 | Display panel |
| CN201510242173.9A CN104794999B (en) | 2015-03-26 | 2015-05-13 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104109799A TWI569067B (en) | 2015-03-26 | 2015-03-26 | Display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201634983A TW201634983A (en) | 2016-10-01 |
| TWI569067B true TWI569067B (en) | 2017-02-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104109799A TWI569067B (en) | 2015-03-26 | 2015-03-26 | Display panel |
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| CN (1) | CN104794999B (en) |
| TW (1) | TWI569067B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10928853B2 (en) | 2019-02-20 | 2021-02-23 | Industrial Technology Research Institute | Transparent display device |
| US11133485B2 (en) | 2019-01-11 | 2021-09-28 | Industrial Technology Research Institute | Light-emitting device and electrode thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105204223B (en) | 2015-10-30 | 2019-05-03 | 京东方科技集团股份有限公司 | A kind of production method of substrate, substrate and display device |
| CN105654858B (en) * | 2016-03-22 | 2019-01-25 | 深圳市华星光电技术有限公司 | Display with double faces and its tft array substrate, array substrate manufacturing method |
| KR20180033347A (en) * | 2016-09-23 | 2018-04-03 | 삼성디스플레이 주식회사 | Liquid crystal display device |
| CN106526991A (en) * | 2016-12-02 | 2017-03-22 | 深圳市华星光电技术有限公司 | Electrode manufacturing method and liquid crystal display panel |
| US10832632B2 (en) * | 2018-03-14 | 2020-11-10 | Samsung Display Co., Ltd. | Low power architecture for mobile displays |
| CN113078190B (en) * | 2021-03-19 | 2022-08-23 | 厦门天马微电子有限公司 | Display panel and display device |
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| TW499602B (en) * | 1999-08-04 | 2002-08-21 | Sharp Kk | Transmission type liquid crystal display device |
| TW201232633A (en) * | 2010-11-24 | 2012-08-01 | Samsung Mobile Display Co Ltd | Display substrate, display panel and display device |
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| JP4011606B2 (en) * | 1995-05-08 | 2007-11-21 | 株式会社半導体エネルギー研究所 | Display device |
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| JP5745979B2 (en) * | 2011-09-16 | 2015-07-08 | 三菱電機株式会社 | Multiple view liquid crystal display |
| KR101335526B1 (en) * | 2012-09-12 | 2013-12-02 | 엘지디스플레이 주식회사 | Stereoscopic image display |
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| TW357277B (en) * | 1995-08-30 | 1999-05-01 | Nippon Electric Co | Thin film liquid crystal display with an improved optical shielding film structure |
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| TW201232633A (en) * | 2010-11-24 | 2012-08-01 | Samsung Mobile Display Co Ltd | Display substrate, display panel and display device |
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| US10928853B2 (en) | 2019-02-20 | 2021-02-23 | Industrial Technology Research Institute | Transparent display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104794999B (en) | 2017-04-05 |
| CN104794999A (en) | 2015-07-22 |
| TW201634983A (en) | 2016-10-01 |
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