TWI568534B - Pad conditioning sweep torque modeling to achieve constant removal rate - Google Patents
Pad conditioning sweep torque modeling to achieve constant removal rate Download PDFInfo
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- TWI568534B TWI568534B TW100114706A TW100114706A TWI568534B TW I568534 B TWI568534 B TW I568534B TW 100114706 A TW100114706 A TW 100114706A TW 100114706 A TW100114706 A TW 100114706A TW I568534 B TWI568534 B TW I568534B
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- 230000003750 conditioning effect Effects 0.000 title 1
- 238000005498 polishing Methods 0.000 claims description 147
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 238000010408 sweeping Methods 0.000 claims description 17
- 238000000418 atomic force spectrum Methods 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 3
- 238000012545 processing Methods 0.000 description 21
- 239000012530 fluid Substances 0.000 description 12
- 230000015654 memory Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 7
- 238000012546 transfer Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本發明之具體實施例大體而言係關於一種用於調整電化學機械處理系統中之拋光表面之方法。 Particular embodiments of the present invention generally relate to a method for adjusting a polished surface in an electrochemical mechanical processing system.
在半導體元件製造中，膜層與結構係藉由各種處理而沉積與形成在半導體基板上。化學機械拋光(CMP)是一種廣泛使用的處理，藉由化學機械拋光，拋光墊片係與拋光溶液結合而以平坦化基板，或維持平坦度以接收後續膜層的方式來移除過剩材料。隨著時間過去，拋光墊片的有效性會因壓力、摩擦與熱結合產生自處理淤漿的顆粒、自基板(或從墊片本身)移除之材料等而消減，以於墊片上形成硬質、相對平滑表面。此效應一般稱為「磨光(glazing)」。為了在已經發生磨光之後增進拋光墊片的有效性，拋光墊片係需週期性地進行調整。墊片調整一般涉及了以研磨調整盤來擦洗拋光墊片，以移除在墊片表面上的任何累積拋光副產物及/或恢復拋光墊片的表面。拋光墊片表面的調整可在以新的拋光墊片進行拋光之前進行、在拋光程序期間進行以維持及/或加強表面粗糙度與拋光墊片表面的移除率、或在拋光之後進行，為待拋光之新基板製備拋光墊片表面。 In the fabrication of semiconductor devices, a film layer and a structure are deposited and formed on a semiconductor substrate by various processes. Chemical mechanical polishing (CMP) is a widely used process that removes excess material by chemical mechanical polishing, in combination with a polishing solution to planarize the substrate, or to maintain flatness to receive subsequent layers. Over time, the effectiveness of the polishing pad will be reduced by the combination of pressure, friction and heat generated particles from the treated slurry, material removed from the substrate (or from the gasket itself), etc., to form on the gasket. Hard, relatively smooth surface. This effect is commonly referred to as "glazing." In order to increase the effectiveness of the polishing pad after buffing has occurred, the polishing pad needs to be periodically adjusted. Shim adjustment generally involves scrubbing the polishing pad with a grinding pad to remove any accumulated polishing by-products on the surface of the pad and/or restore the surface of the polishing pad. Adjustment of the surface of the polishing pad can be performed prior to polishing with a new polishing pad, during the polishing process to maintain and/or enhance the surface roughness and removal rate of the polishing pad surface, or after polishing, A new substrate to be polished is used to prepare a polishing pad surface.
一般都知道調整盤的有效性會因為盤體與墊片磨耗而 隨時間降低。因此，拋光墊片的有效性會隨時間而浮動，因而隨不同基板產生非均勻結果。因此，需要一種改良方法來調整拋光墊片，以在調整盤的壽命期間增進拋光墊片的性能。 It is generally known that the effectiveness of the adjustment plate will be caused by the wear of the disk and the gasket. Decreased over time. As a result, the effectiveness of the polishing pad can fluctuate over time, resulting in non-uniform results with different substrates. Therefore, there is a need for an improved method of adjusting the polishing pad to enhance the performance of the polishing pad during the life of the adjustment disk.
本發明之具體實施例提供了用於調整拋光墊片之方法。在一具體實施例中，一種用於調整拋光墊片之方法包含：對調整盤施加向下力，該向下力推進該調整盤抵住該拋光墊片；測量使該調整盤掃略該拋光墊片所需之力矩；比較所測量之力矩與模式化力輪廓(MFP)，藉以決定向下力之變化量；以及回應所決定之變化量，調整該調整盤施抵該拋光墊片之向下力。 Particular embodiments of the present invention provide methods for adjusting a polishing pad. In a specific embodiment, a method for adjusting a polishing pad includes: applying a downward force to the adjustment disk, the downward force advancing the adjustment disk against the polishing pad; and measuring the polishing disk to sweep the polishing The torque required by the gasket; the measured torque and the patterned force profile (MFP) are used to determine the amount of change in the downward force; and in response to the determined amount of change, adjust the direction of the adjustment plate to the polishing pad Under the force.
在另一具體實施例中，一種用於調整拋光墊片之方法包含：施加向下力，以推進調整盤抵住該拋光墊片；測量該調整盤接觸該拋光墊片所產生之摩擦力；比較所測量之摩擦力與模式化力輪廓(MFP)，以決定向下力之變化量；以及回應所測量之摩擦力與該MFP間之比較，調整所施加之向下力。 In another embodiment, a method for adjusting a polishing pad includes: applying a downward force to urge the adjustment disk against the polishing pad; measuring a frictional force generated by the adjustment disk contacting the polishing pad; The measured frictional force and the patterned force profile (MFP) are compared to determine the amount of change in the downward force; and the applied downward force is adjusted in response to the measured frictional force versus the MFP.
在又一具體實施例中，一種以調整盤調整拋光墊片之設備係包含：平台，該平台用以支撐該拋光墊片；調整頭，該調整頭用以固定該調整盤；向下力致動器，該向下力致動器可用於以使該調整頭對該拋光墊片施以向下 力之方式來移動該調整頭；臂體，該臂體耦接至該調整頭，以支撐該調整頭於該平台上方；掃略致動器，該掃略致動器耦接至該臂體，且可用於使該調整頭掃略於該平台；以及掃略力矩感測器，該掃略力矩感測器可用於當該調整盤接觸該拋光墊片時，測量為使該調整頭掃略於該平台所需之力矩。 In another embodiment, an apparatus for adjusting a polishing pad by an adjustment disk comprises: a platform for supporting the polishing pad; an adjustment head for fixing the adjustment plate; The downward force actuator can be used to cause the adjusting head to apply downward to the polishing pad The force is used to move the adjusting head; the arm body is coupled to the adjusting head to support the adjusting head above the platform; the actuator is swept, and the sweeping actuator is coupled to the arm body And can be used to sweep the adjustment head to the platform; and a sweep torque sensor, the sweep torque sensor can be used to measure the adjustment head when the adjustment disc contacts the polishing pad The torque required for the platform.
本發明之具體實施例係與CMP拋光墊片的性能有關。所揭示之具體實施例提供了一種基於調整臂體掃略力矩以及拋光墊片與調整盤間摩擦力之間的關係來控制CMP拋光器之方法與設備。具體實施例包含了一種用於調整由調整盤施加至拋光墊片之向下力的方法，該方法係基於測量力與模式化力輪廓間之差異而調整以改善處理結果。可知本發明之構想係可使用調整器掃略力矩來監看拋光器性能，該等構想係可即時，及/或在基板被拋光同時調整拋光墊片(亦即原位調整)時、當拋光墊片在基板拋光中被調整(亦即區外調整)時，或上述情況的任何組合時應用。 Specific embodiments of the invention relate to the performance of CMP polishing pads. The disclosed embodiments provide a method and apparatus for controlling a CMP polisher based on adjusting the arm sweeping torque and the relationship between the polishing pad and the friction between the adjustment disks. Particular embodiments include a method for adjusting the downward force applied by the adjustment disk to the polishing pad, the method being adjusted based on the difference between the measured force and the patterned force profile to improve processing results. It can be seen that the idea of the present invention is to use the adjuster sweep torque to monitor the performance of the polisher, which can be polished immediately, and/or when the substrate is polished while adjusting the polishing pad (ie, in-situ adjustment) The spacer is applied when the substrate is being polished (i.e., adjusted outside the zone), or any combination of the above.
第1圖為根據本發明特定構想之示例CMP系統之一具體實施例的截面圖。如第1圖所示，CMP系統包含拋光器100，拋光器100具有機械基座130、拋光流體傳送臂體190、置於平台102上的拋光墊片104、拋光頭106、 調整器裝置122以及控制器152。機械基座130支撐平台102、拋光流體傳送臂體190與調整器裝置122。平台102支撐拋光頭106。 1 is a cross-sectional view of one embodiment of an exemplary CMP system in accordance with a particular concept of the present invention. As shown in FIG. 1, the CMP system includes a polisher 100 having a mechanical base 130, a polishing fluid transfer arm body 190, a polishing pad 104 disposed on the platform 102, a polishing head 106, Adjuster device 122 and controller 152. The mechanical base 130 supports the platform 102, the polishing fluid transfer arm body 190, and the adjuster device 122. The platform 102 supports the polishing head 106.
在處理期間，拋光頭106係使基板118固定並使基板118旋轉接觸至拋光墊片104。拋光頭106可包含固定環116，固定環116於處理期間避免基板118從拋光頭106下方移動離開。拋光頭106係由馬達120旋轉，藉此沿著拋光頭106之中央軸D旋轉基板118抵住拋光墊片104。感測器148可用以取得為將基板118旋抵拋光墊片104所需的力度量。 During processing, the polishing head 106 secures the substrate 118 and rotationally contacts the substrate 118 to the polishing pad 104. The polishing head 106 can include a retaining ring 116 that prevents the substrate 118 from moving away from beneath the polishing head 106 during processing. The polishing head 106 is rotated by the motor 120 whereby the substrate 118 is rotated against the polishing pad 104 along the central axis D of the polishing head 106. The sensor 148 can be used to obtain a force metric required to rotate the substrate 118 against the polishing pad 104.
平台102係用以在處理期間旋轉拋光墊片104，使得拋光墊片104平面化(或「拋光」)基板118的表面，基板118配置在墊片104上。拋光墊片104係消耗性產品，拋光墊片104具有拋光表面且可鎖固至平台102。平台102與拋光墊片104係藉由軸桿114而由耦接至平台102的馬達112帶動旋轉。馬達112係用以使拋光墊片104相對於固定在拋光頭106中的基板118移動。在第1圖所示之具體實施例中，馬達112於X-Z平面中沿著中央軸A而旋轉，中央軸A與平台102垂直。感測器150可用於獲得度量，該度量代表為使平台102與拋光墊片104相對於基板118及/或調整器裝置122旋轉所需的力。 The platform 102 is used to rotate the polishing pad 104 during processing such that the polishing pad 104 planarizes (or "poliss") the surface of the substrate 118, and the substrate 118 is disposed on the spacer 104. The polishing pad 104 is a consumable product, and the polishing pad 104 has a polished surface and is lockable to the platform 102. The platform 102 and the polishing pad 104 are rotated by a motor 112 coupled to the platform 102 by a shaft 114. Motor 112 is used to move polishing pad 104 relative to substrate 118 that is fixed in polishing head 106. In the particular embodiment illustrated in FIG. 1, motor 112 rotates along a central axis A in the X-Z plane, which is perpendicular to platform 102. The sensor 150 can be used to obtain a metric that represents the force required to rotate the platform 102 and the polishing pad 104 relative to the substrate 118 and/or the adjuster device 122.
拋光流體傳送臂體190係於拋光期間對拋光墊片104的表面提供拋光流體。拋光流體可包含含研磨劑拋光淤漿，或可包含無研磨劑流體(該無研磨劑流體係具反應 性)。 The polishing fluid transfer arm body 190 provides polishing fluid to the surface of the polishing pad 104 during polishing. The polishing fluid may comprise an abrasive-containing polishing slurry or may comprise a non-abrasive fluid (the abrasive-free fluid system has a reaction) Sex).
調整器裝置122一般包含調整頭108、軸桿126與臂體128。軸桿126與臂體128支撐調整頭108於平台102上方。調整頭108固定調整盤124，調整盤124係選擇性放置為與拋光墊片104接觸，以調整拋光墊片104的表面。 The adjuster device 122 generally includes an adjustment head 108, a shaft 126 and an arm body 128. The shaft 126 and the arm body 128 support the adjustment head 108 above the platform 102. The adjustment head 108 secures the adjustment disk 124 that is selectively placed in contact with the polishing pad 104 to adjust the surface of the polishing pad 104.
軸桿126係配置為穿過拋光器100的機械基座130。軸桿126可沿著垂直於機械基座130的軸B旋轉，在機械基座130與軸桿126之間的軸桿132增進了此旋轉，使得臂體128旋轉調整頭108。在一具體實施例中，耦接至軸桿126之掃略致動器144可以係旋轉軸桿126以推進臂體128而使調整頭108掃略於拋光墊片104上。 The shaft 126 is configured to pass through the mechanical base 130 of the polisher 100. The shaft 126 is rotatable along an axis B that is perpendicular to the mechanical base 130, and the shaft 132 between the mechanical base 130 and the shaft 126 enhances this rotation such that the arm 128 rotates the adjustment head 108. In one embodiment, the sweep actuator 144 coupled to the shaft 126 can rotate the shaft 126 to advance the arm body 128 to sweep the adjustment head 108 over the polishing pad 104.
調整器裝置122更包含掃略力矩感測器146，以偵測為使調整盤124移動於拋光墊片104的表面上所需的掃略力矩。在一具體實施例中，掃略力矩感測器146可以係耦接至掃略致動器144之力矩或其他力感測器。在其他具體實施例中，掃略力矩感測器146可以係耦接至掃略致動器144之電流感測器或壓力感測器。電流感測器可偵測由掃略致動器144因調整盤124與拋光墊片104之間摩擦力變化所引出的電流變化。壓力感測器可以係與掃略致動器144相接，以於調整盤124與拋光墊片104之間的摩擦力改變時偵測用以致動掃略致動器144之壓力變化。在另一具體實施例中，掃略致動器144可以係直驅式馬達，該直驅式馬達係配置以提供淨力矩反饋供 測量與控制墊片調整器掃略力矩之用。在其他的具體實施例中，掃略力矩感測器146可以係適合提供度量的任何其他感測器，該度量代表為於拋光墊片104的表面上移動調整盤124所需的力。 The adjuster device 122 further includes a sweep torque sensor 146 to detect the sweeping torque required to move the adjustment disk 124 to the surface of the polishing pad 104. In one embodiment, the sweep torque sensor 146 can be coupled to a torque or other force sensor of the sweep actuator 144. In other embodiments, the sweep torque sensor 146 can be coupled to a current sensor or pressure sensor of the sweep actuator 144. The current sensor can detect a change in current drawn by the sweep actuator 144 due to a change in friction between the adjustment disk 124 and the polishing pad 104. The pressure sensor can be coupled to the sweep actuator 144 to detect a change in pressure used to actuate the sweep actuator 144 as the friction between the adjustment dial 124 and the polishing pad 104 changes. In another embodiment, the sweep actuator 144 can be a direct drive motor configured to provide net torque feedback for Measuring and controlling the shim adjuster for sweeping torque. In other embodiments, the sweep torque sensor 146 can be any other sensor suitable for providing a metric that represents the force required to move the adjustment disk 124 over the surface of the polishing pad 104.
調整頭108帶動調整盤124沿著垂直通過調整盤124的軸C而旋轉。調整盤124是由適合調整拋光墊片104之材料的材料所製成。調整盤124可以係毛刷、聚合物，或研磨表面。在一具體實施例中，調整盤124具有表面，該表面含研磨顆粒(例如鑽石或其他相對硬質物質)。 The adjustment head 108 drives the adjustment disk 124 to rotate along the axis C that passes vertically through the adjustment disk 124. The adjustment disk 124 is made of a material suitable for adjusting the material of the polishing pad 104. The adjustment disk 124 can be a brush, a polymer, or an abrasive surface. In a specific embodiment, the adjustment disk 124 has a surface that contains abrasive particles (eg, diamond or other relatively hard material).
在一具體實施例中，馬達134係用以帶動調整盤124而相對於拋光墊片104旋轉。在一具體實施例中，馬達134係配置於臂體128遠端處之外殼136中。 In one embodiment, the motor 134 is configured to rotate the adjustment disk 124 relative to the polishing pad 104. In one embodiment, the motor 134 is disposed in the outer casing 136 at the distal end of the arm body 128.
感測器138可偵測當調整盤124與拋光墊片104接觸時為帶動調整盤124沿軸C旋轉所需的力矩或旋轉力。在一具體實施例中，感測器138可置於外殼136內。在一具體實施例中，感測器138可為耦接至馬達134的電流感測器。電流感測器可偵測馬達134因調整盤124與拋光墊片104間摩擦力變化所致之電流變化。在另一具體實施例中，感測器138可以係力矩感測器、撓度感測器，或張力計，且感測器138可定位於馬達與調整頭之間的驅動列中，以測量因對調整頭摩擦而產生於驅動列上之力。 The sensor 138 can detect the torque or rotational force required to drive the adjustment disk 124 to rotate along the axis C when the adjustment disk 124 is in contact with the polishing pad 104. In a specific embodiment, the sensor 138 can be placed within the housing 136. In a specific embodiment, the sensor 138 can be a current sensor coupled to the motor 134. The current sensor can detect the change in current of the motor 134 due to the change in friction between the adjustment disk 124 and the polishing pad 104. In another embodiment, the sensor 138 can be a torque sensor, a deflection sensor, or a tensiometer, and the sensor 138 can be positioned in a drive train between the motor and the adjustment head to measure the cause The force generated by the friction of the adjustment head on the drive train.
利用向下力致動器140來推進調整盤124抵住拋光墊片104。向下力致動器140係配置以選擇性地設定調整 盤124對拋光墊片104所施之力。在一具體實施例中，向下力致動器140可以係置於臂體128與軸桿126之間，或置於其他合適位置中。 The downward force actuator 140 is used to advance the adjustment disk 124 against the polishing pad 104. The downward force actuator 140 is configured to selectively set the adjustment The force exerted by the disk 124 on the polishing pad 104. In one embodiment, the downward force actuator 140 can be placed between the arm body 128 and the shaft 126, or in other suitable positions.
向下力感測器142係用以偵測度量，該度量代表調整盤124對拋光墊片104所施加之向下力。在一具體實施例中，向下力感測器142可以係位於向下力致動器140之共同線路中，或可放置在其他適合位置中。 The down force sensor 142 is used to detect a metric that represents the downward force applied by the adjustment disk 124 to the polishing pad 104. In one embodiment, the downward force sensor 142 can be located in a common line of the downward force actuators 140 or can be placed in other suitable positions.
在一具體實施例中，拋光器100可選擇性地包含墊片厚度感測器(未圖示)，該墊片厚度感測器耦接至調整頭108。墊片厚度感測器可偵測置於平台102上之拋光墊片的厚度。墊片厚度感測器可決定平台102上拋光墊片104的壽命終點。在一具體實施例中，墊片厚度感測器可進一步對控制器152提供另外的反饋訊號以控制調整向下力。 In one embodiment, the polisher 100 can optionally include a shim thickness sensor (not shown) coupled to the adjustment head 108. The shim thickness sensor detects the thickness of the polishing pad placed on the platform 102. The shim thickness sensor can determine the end of life of the polishing pad 104 on the platform 102. In a specific embodiment, the shim thickness sensor can further provide additional feedback signals to the controller 152 to control the adjustment of the downward force.
一般而言，控制器152係用以控制拋光器100中的一或多個組件與拋光器100中所執行之處理。在一具體實施例中，控制器152可以係使用感測資料作為反饋訊號，以控制處理期間自基板118之材料移除率。控制器152可以係耦接於拋光器100的各個點處，以傳送與接收來自各個組件之訊號。舉例而言，控制器152可以係傳送控制訊號至馬達112、120、134、掃略致動器144與向下力致動器140，並接收對應於感測器138、142、146、148、150所偵測之力的訊號。 In general, controller 152 is used to control one or more components in polisher 100 and the processing performed in polisher 100. In one embodiment, the controller 152 can use the sensing data as a feedback signal to control the material removal rate from the substrate 118 during processing. Controller 152 can be coupled to various points of polisher 100 to transmit and receive signals from various components. For example, the controller 152 can transmit control signals to the motors 112, 120, 134, the sweep actuator 144 and the downward force actuator 140, and receive corresponding to the sensors 138, 142, 146, 148, The signal of 150 detected forces.
控制器152一般係設計以增進拋光器100的控制與自 動化，且一般係包含中央處理單元(CPU)154、記憶體156與支援電路(或I/O)158。CPU 154可以係任何形式的電腦處理器中之其一，該等電腦處理器用於工業設定以控制各種系統功能、基板移動、腔室處理、處理時序與支援硬體(例如，感測器、自動機器人、馬達、時序裝置等)，並監測處理(例如，化學濃度、處理變數、腔室處理時間、I/O訊號等)。記憶體156係連接至CPU 154，且記憶體156可為一或多個可直接存取之記憶體，例如，隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟性磁碟、硬碟或任何其他形式之數位儲存器(局部或遠端)。軟體指令與資料可經編碼並儲存於記憶體內以指示CPU 154。支援電路158亦連接至CPU 154，支援電路158以傳統方式支援處理器。支援電路158可包含快取記憶體、電力供應器、時鐘電路、輸入/輸出電路、子系統等。可由控制器152讀取之程式或電腦指令係決定在基板上可執行之任務。較佳為，該程式係可由控制器152讀取之軟體，該程式包含編碼以執行與監測、實施並控制拋光器100中的基板移動、支撐及/或定位相關的任務。在一具體實施例中，控制器152係用以控制自動化裝置，以控制拋光器100之戰略移動、排程及執行，而使處理重複進行、解決佇列時序問題，並避免基板之過度處理或處理不足。 The controller 152 is generally designed to enhance the control and self-control of the polisher 100. The centralization unit (CPU) 154, the memory 156, and the support circuit (or I/O) 158 are generally included. The CPU 154 can be one of any form of computer processor for industrial settings to control various system functions, substrate movement, chamber processing, processing timing, and support hardware (eg, sensors, auto Robots, motors, timing devices, etc.) and monitor processing (eg, chemical concentration, process variables, chamber processing time, I/O signals, etc.). The memory 156 is connected to the CPU 154, and the memory 156 can be one or more directly accessible memories, such as random access memory (RAM), read only memory (ROM), flexible disk, A hard disk or any other form of digital storage (local or remote). The software instructions and data can be encoded and stored in memory to indicate CPU 154. Support circuit 158 is also coupled to CPU 154, which supports the processor in a conventional manner. Support circuitry 158 may include cache memory, power supplies, clock circuitry, input/output circuitry, subsystems, and the like. Programs or computer commands that can be read by controller 152 determine the tasks that can be performed on the substrate. Preferably, the program is software that can be read by controller 152, the program including code to perform tasks associated with monitoring, implementing, and controlling substrate movement, support, and/or positioning in polisher 100. In a specific embodiment, the controller 152 is used to control the automation device to control the strategic movement, scheduling, and execution of the polisher 100, to repeat the process, to solve the alignment time problem, and to avoid over-processing of the substrate or Not enough processing.
在運作時，如第2圖所示，由拋光流體傳送臂體190將拋光流體202提供至拋光墊片104的表面。拋光頭106推進基板118抵住拋光墊片104。在拋光流體202的存 在下，與旋轉之拋光墊片104的表面接觸係使基板118的表面平面化。在一具體實施例中，拋光墊片104可運作以平面化基板，而以預定速率(根據下述說明，該預定速率有時稱為移除率)移除基板表面之材料。 In operation, as shown in FIG. 2, polishing fluid 202 is provided to the surface of polishing pad 104 by polishing fluid transfer arm body 190. The polishing head 106 advances the substrate 118 against the polishing pad 104. In the preservation of the polishing fluid 202 Below, the surface contact with the rotating polishing pad 104 planarizes the surface of the substrate 118. In one embodiment, the polishing pad 104 is operable to planarize the substrate while removing material from the substrate surface at a predetermined rate (according to the following description, the predetermined rate is sometimes referred to as removal rate).
在平面化基板118之前、平面化基板118期間及/或之後，拋光墊片104可以係經調整。在調整期間，調整頭108以預定向下力推進調整盤124抵住拋光墊片104。在拋光墊片104上來回掃略時，調整盤124係相對於拋光墊片104的表面旋轉。在調整盤與拋光墊片之間的接觸係提供拋光墊片表面紋理，該紋理適於維持基板之移除率。調整盤124與拋光墊片104之間的相互作用會產生摩擦力，該摩擦力可以係如下述般進行偵測。根據一具體實施例，拋光墊片的移除率和產生於調整盤上的摩擦力可以係直接與調整向下力有關。因此，可根據為特定向下力所觀察到的摩擦力來估計移除率。 Polishing pad 104 may be adjusted prior to planarizing substrate 118, during and/or after planarizing substrate 118. During adjustment, the adjustment head 108 urges the adjustment disk 124 against the polishing pad 104 with a predetermined downward force. As the polishing pad 104 is swept back and forth, the adjustment disk 124 is rotated relative to the surface of the polishing pad 104. The contact between the adjustment disk and the polishing pad provides a polishing pad surface texture that is adapted to maintain the removal rate of the substrate. The interaction between the adjustment disk 124 and the polishing pad 104 creates a frictional force that can be detected as follows. According to a specific embodiment, the removal rate of the polishing pad and the friction generated on the adjustment disk may be directly related to adjusting the downward force. Therefore, the removal rate can be estimated based on the frictional force observed for a particular downward force.
第3圖為可使用本文所述構想之拋光器100所執行之方法300的流程圖。可知也可利用其他適當的CMP系統與設備來執行方法300。 FIG. 3 is a flow diagram of a method 300 that may be performed using the polisher 100 contemplated herein. It is understood that method 300 can also be performed using other suitable CMP systems and devices.
在302，利用向下力將調整盤124推抵拋光墊片104。可測量調整盤124對拋光墊片104之向下力，以對力致動器140提供反饋。在一具體實施例中，係利用向下力感測器142所提供之度量來測量向下力。所測量之向下力可以係用於考量調整頭108的重量。 At 302, the adjustment disk 124 is pushed against the polishing pad 104 with a downward force. The downward force of the adjustment disk 124 against the polishing pad 104 can be measured to provide feedback to the force actuator 140. In one embodiment, the downward force is measured using the metric provided by the downward force sensor 142. The measured downward force can be used to consider the weight of the adjustment head 108.
在304，測量為使調整盤124相對於拋光墊片104移 動所需的力。為使調整盤124相對於拋光墊片104移動所需的力係定義為力或力矩。在一具體實施例中，利用由掃略力矩感測器所提供之度量來測量為使調整盤掃略於拋光墊片上所需的力或力矩。當調整盤與拋光墊片中其一或兩者都磨耗，及/或處理條件改變時，掃略力矩會因調整盤與拋光墊片之間的相對摩擦力變化而隨時間改變。若調整處理不隨時間改變，所測量之掃略力矩便會隨調整盤之壽命而減少，因為調整盤會磨耗且調整盤之有效切割率會逐漸降低。因此，根據下述構想，藉由使用掃略力矩作為反饋訊號，係可調整向下力以補償磨耗之調整盤，藉此改良調整處理以維持恆定的移除率。在另一具體實施例中，調整盤124與拋光墊片104之間的摩擦力會產生阻力，該阻力可藉由監測為旋轉調整盤124及/或拋光墊片104中至少其一所需的力變化而加以偵測。在另一具體實施例中，在基板118與拋光墊片104之間的摩擦力係產生阻力，該阻力可藉由上述之一或多個感測器138、142、146、148與150加以測量。應了解在一具體實施例中，任何上述之摩擦力係可作為反饋訊號以維持恆定移除率。 At 304, the measurement is made to move the adjustment disk 124 relative to the polishing pad 104 The force required to move. The force required to move the adjustment disk 124 relative to the polishing pad 104 is defined as a force or moment. In one embodiment, the force or moment required to sweep the adjustment disk over the polishing pad is measured using a metric provided by the sweep torque sensor. When one or both of the adjustment disk and the polishing pad wear, and/or the processing conditions change, the sweep torque changes over time due to the relative frictional change between the adjustment disk and the polishing pad. If the adjustment process does not change over time, the measured sweeping torque will decrease with the life of the adjustment disc, because the adjustment disc will wear and the effective cutting rate of the adjustment disc will gradually decrease. Therefore, according to the following concept, by using the sweeping torque as the feedback signal, the downward force can be adjusted to compensate for the wear of the adjustment disk, thereby improving the adjustment process to maintain a constant removal rate. In another embodiment, the friction between the adjustment disk 124 and the polishing pad 104 creates a resistance that can be monitored by monitoring at least one of the rotation adjustment disk 124 and/or the polishing pad 104. Force changes to detect. In another embodiment, the friction between the substrate 118 and the polishing pad 104 creates a resistance that can be measured by one or more of the sensors 138, 142, 146, 148, and 150 described above. . It will be appreciated that in one embodiment, any of the above frictional forces can be used as feedback signals to maintain a constant removal rate.
在306，於304所測得之力可以係與模式化力輪廓(MFP)比較，以決定為維持均勻移除所需之向下力變化。當在306所測量的力為力矩時，MFP係模式化力矩輪廓(MTP)。為求簡潔，在應用時對於MFP之參照係指MTP。在一具體實施例中，控制器可比較所測量之力或力矩與 模式化力輪廓，以決定向下力之變化。在一具體實施例中，可基於MFP來計算適合維持基板之恆定材料移除率之一個新的向下力。在一具體實施例中，可於基板處理期間使用新的向下力作為封閉迴路控制程序。在另一具體實施例中，新的向下力數值可用於下一個待處理基板作為反饋控制程序之用。在已知測量力大小與所需移除率下，MFP可計算新的向下力。在大部分應用中，已決定與維持恆定移除率有關的MFP為非線性，且因此力矩變化並不與向下力變化量線性成比例。應知對於特定處理條件而言，力矩變化量可以係與向下力變化量線性成比例。 At 306, the force measured at 304 can be compared to a patterned force profile (MFP) to determine the downward force change required to maintain uniform removal. When the force measured at 306 is a moment, the MFP is patterned torque profile (MTP). For the sake of brevity, the reference to the MFP at the time of application refers to the MTP. In a specific embodiment, the controller can compare the measured force or moment with Pattern the force profile to determine the change in the downward force. In a specific embodiment, a new downward force suitable to maintain a constant material removal rate of the substrate can be calculated based on the MFP. In a specific embodiment, a new downward force can be used as a closed loop control program during substrate processing. In another embodiment, a new downward force value can be used for the next substrate to be processed as a feedback control program. The MFP can calculate a new downward force with the known measurement force magnitude and desired removal rate. In most applications, it has been decided that the MFP associated with maintaining a constant removal rate is non-linear, and thus the torque variation is not linearly proportional to the amount of downward force variation. It should be understood that for certain processing conditions, the amount of torque change can be linearly proportional to the amount of change in the downward force.
根據一具體實施例，可以係決定一個新的向下力來增進拋光墊片的壽命。藉由決定一個較低的初始向下力(該初始向下力仍適合達成特定掃略力矩目標)，可減輕拋光墊片之磨耗。當調整盤是新的時，利用較低的初始向下力數值可避免因過度處理所致之過剩拋光墊片磨耗，且在調整盤的表面磨耗時，係可增加向下力以維持拋光性能。 According to a specific embodiment, a new downward force can be determined to enhance the life of the polishing pad. By determining a lower initial downward force (which is still suitable for achieving a specific sweeping torque target), the wear of the polishing pad can be reduced. When the adjustment disc is new, the use of a lower initial downward force value avoids excessive polishing pad wear due to over-treatment, and increases the downward force to maintain polishing performance when the surface of the adjustment disc is worn. .
在308，可回應於所測量之力和MFP之間的差異而調整向下力。在一具體實施例中，可回應於所測量之力矩與MFP之間的差異而調整向下力。在一具體實施例中，控制訊號可以係被傳送至向下力致動器，以增加作用於調整盤上的向下力。在另一具體實施例中，控制訊號可以係被傳送至向下力致動器，以減少向下力以降低拋光 墊片與調整盤上之過剩磨耗。可知可預先定義向下力的上限，以限制向下力致動器所施加的向下力大小。 At 308, the downward force can be adjusted in response to the difference between the measured force and the MFP. In a specific embodiment, the downward force can be adjusted in response to the difference between the measured torque and the MFP. In a specific embodiment, the control signal can be transmitted to the downward force actuator to increase the downward force acting on the adjustment disk. In another embodiment, the control signal can be transmitted to the downward force actuator to reduce the downward force to reduce polishing. Excessive wear on the gasket and adjustment plate. It can be seen that the upper limit of the downward force can be predefined to limit the amount of downward force applied by the downward force actuator.
在基板正受處理時，可調整新的向下力作為封閉迴路控制程序，或可調整新的向下力作為反饋控制程序而供下一個待處理基板之用。 When the substrate is being processed, a new downward force can be adjusted as a closed loop control program, or a new downward force can be adjusted as a feedback control program for the next substrate to be processed.
MFP可以係透過經驗值、先前實驗與測試、模式化、計算而產生，或可被提供作為具調整盤規格之參考曲線。一般而言，已經決定移除率、掃略力矩，以及向下力之間的關係會因調整盤老化而發展。當調整盤的表面面臨較大磨耗時，移除率會因而因調整向下力固定而降低。因此，較高的向下力數值係用於提供相同程度的拋光墊片表面之中斷或回復，且為維持恆定的移除率，可週期性地增加調整向下力。 The MFP may be generated by empirical values, prior experiments and tests, patterning, calculations, or may be provided as a reference curve with adjustment disk specifications. In general, it has been decided that the relationship between the removal rate, the sweeping torque, and the downward force will develop due to the aging of the adjustment disk. When the surface of the adjustment disc faces a large wear, the removal rate is thus lowered by the adjustment of the downward force. Therefore, a higher downward force value is used to provide the same degree of interruption or recovery of the polishing pad surface, and to maintain a constant removal rate, the downward force can be periodically increased.
根據某些構想，已決定了掃略力矩和調整向下力之間的關係可以係依循持續使用調整盤之類似趨勢。對於固定的調整向下力而言，在調整盤與拋光墊片之間的摩擦力會因調整盤的研磨表面磨耗而降低，導致掃略致動器面臨較低力矩。掃略力矩的降低可代表墊片調整有效性因磨耗了研磨表面而降低。同樣地，已經決定移除率與調整掃略力矩之間的關係也隨調整盤的壽命而發展。磨耗的調整盤調整拋光墊片之效率可能較低，該較低效率會導致移除率隨時間而降低。 According to some ideas, it has been determined that the relationship between the sweeping torque and the adjustment of the downward force may follow a similar trend of continuous use of the adjustment disk. For a fixed adjustment of the downward force, the friction between the adjustment disc and the polishing pad is reduced by the wear of the grinding surface of the adjustment disc, resulting in a lower torque of the sweep actuator. A reduction in the sweeping torque can mean that the effectiveness of the shim adjustment is reduced by the wear of the abraded surface. Similarly, it has been decided that the relationship between the removal rate and the adjustment of the sweep torque also progresses with the life of the adjustment disk. The worn adjustment disc may have a lower efficiency in adjusting the polishing pad, which may result in a lower removal rate over time.
根據某些構想，可利用兩個不同資料組之分析來建立MFP。第一個資料組可利用實驗設計而得，該等實驗係 利用在不同磨耗階段的調整盤而執行。可針對每次向下力調整測量掃略力矩的均方根(RMS)，以及全覆式基板移除率。第二個資料組可為全覆式基板之馬拉松式運作，其中係利用手動CLC以階梯式形式改變向下力。在一具體實施例中，所施加之向下力可以係開始於3磅之向下力，且在處理2500片基板的過程中可增加至11磅之向下力。可以對每一個基板測量掃略力矩之RMS，而全覆式RR的測量則可以較不頻繁。可結合該兩個資料組，並利用最小方差計算方式或適當的任何其他資料匹配方式來估算RMS掃略力矩(T)、向下力(DF)，與全覆式RR之間的模式化力輪廓。在一具體實施例中，模式的結構可以係如下述：Log e (T)=b＊Log e (RR)+a＊Log e (DF) (1) According to some concepts, analysis of two different data sets can be utilized to build an MFP. The first data set can be obtained using experimental design, which is performed using adjustment disks at different wear stages. The root mean square (RMS) of the sweep torque can be measured for each downward force adjustment, as well as the full coverage substrate removal rate. The second data set can be a marathon operation of a full-cover substrate, in which the manual CLC is used to change the downward force in a stepped manner. In one embodiment, the applied downward force can be initiated at a downward force of 3 pounds and can be increased to a downward force of 11 pounds during processing of 2,500 substrates. The RMS of the sweeping moment can be measured for each substrate, while the full-coverage RR can be measured less frequently. The two data sets can be combined and the RMS sweep torque (T), the downward force (DF), and the patterning force between the full-cover RR can be estimated using the minimum variance calculation method or any other suitable data matching method. profile. In a specific embodiment, the structure of the pattern may be as follows: Log e ( T ) = b * Log e ( RR ) + a * Log e ( DF ) (1)
其中a與b為從最小方差計算中所得之常數。在一具體實例中，針對一氧化物CMP系統(該系統使用應用材料公司所製造之低向下力調整臂體)所計算之數值b與a分別為0.228與0.3。在其他條件中，常數b與a可以係針對特定墊片材料、拋光流體、待拋光基板材料而加以選擇。 Where a and b are the constants obtained from the calculation of the minimum variance. In one embodiment, the values b and a calculated for the oxide CMP system (which uses a low downward force adjustment arm made by Applied Materials) are 0.228 and 0.3, respectively. In other conditions, the constants b and a can be selected for a particular gasket material, polishing fluid, substrate material to be polished.
式(1)也可重寫為：Log e (T)-Log e (DF) a =Log e (RR) b Equation (1) can also be rewritten as: Log e ( T )- Log e ( DF ) a = Log e ( RR ) b
對於恆定的RR=k而言，等式可簡化為：
式(5)說明了目標掃略力矩之模式化力輪廓係為達成恆定移除率之向下力的函數。 Equation (5) illustrates that the modeled force profile of the target sweep torque is a function of the downward force to achieve a constant removal rate.
因此，已提供了用於在調整盤之壽命間維持恆定移除率之方法。本發明之具體實施例較佳地補償了調整有效性的損失，以維持所需處理性能。該方法係可原位使用作為運行之處理，或是作為反饋程序以實質消除處理漂移。此外，本發明之具體實施例係藉由決定較低之向下力仍足以達成特定掃略力矩目標而有利地延長了拋光墊片的使用壽命。因此，例如在調整盤是新的且剛進行研磨時，本發明之具體實施例有利地降低了因過度調整所致之過剩拋光墊片磨耗。根據特定具體實施例，墊片壽命可以係比傳統方式提昇了20%至60%。同樣地，應了解本發明之具體實施例係有利地增加了調整盤的有用壽命。 Therefore, methods have been provided for maintaining a constant removal rate over the life of the adjustment disk. Embodiments of the present invention preferably compensate for the loss of adjustment effectiveness to maintain desired processing performance. The method can be used in situ as a process of operation or as a feedback program to substantially eliminate processing drift. Moreover, embodiments of the present invention advantageously extend the useful life of the polishing pad by determining that the lower downward force is still sufficient to achieve a particular sweeping torque target. Thus, for example, when the adjustment disk is new and just being ground, embodiments of the present invention advantageously reduce excessive polishing pad wear due to over-adjustment. According to a particular embodiment, the gasket life can be increased by 20% to 60% over conventional methods. As such, it will be appreciated that particular embodiments of the present invention advantageously increase the useful life of the adjustment disk.
前述說明係與本發明之具體實施例有關，可在不脫離本發明之基本範疇下得知本發明之其他與進一步之具體實施例，且本發明之範疇係由下述申請專利範圍所決定。舉例而言，前述說明係與本發明之具體實施例中著重調整盤之掃略力矩有關，然應知在CMP系統中所測量之力矩，例如在其他馬達或致動器處所測量者，亦可用 於決定控制拋光器之模式化力輪廓。 The foregoing description relates to the specific embodiments of the present invention, and other and further embodiments of the present invention can be made without departing from the basic scope of the invention, and the scope of the invention is determined by the scope of the following claims. For example, the foregoing description relates to adjusting the sweeping torque of the disc in a specific embodiment of the present invention, but it is also known that the torque measured in the CMP system, for example, measured at other motors or actuators, may also be used. It is decided to control the patterning force profile of the polisher.
100‧‧‧拋光器 100‧‧‧ polishing machine
102‧‧‧平台 102‧‧‧ platform
104‧‧‧拋光墊片 104‧‧‧ polishing pad
106‧‧‧拋光頭 106‧‧‧ polishing head
108‧‧‧調整頭 108‧‧‧Adjusting head
112‧‧‧馬達 112‧‧‧Motor
114‧‧‧軸桿 114‧‧‧ shaft
118‧‧‧基板 118‧‧‧Substrate
120‧‧‧馬達 120‧‧‧Motor
122‧‧‧調整器裝置 122‧‧‧ adjuster device
124‧‧‧調整盤 124‧‧‧Adjustment plate
126‧‧‧軸桿 126‧‧‧ shaft
128‧‧‧臂體 128‧‧‧Body
130‧‧‧機械基座 130‧‧‧Mechanical base
132‧‧‧軸承 132‧‧‧ Bearing
134‧‧‧馬達 134‧‧‧ motor
136‧‧‧外殼 136‧‧‧Shell
138‧‧‧感測器 138‧‧‧ sensor
140‧‧‧向下力致動器 140‧‧‧down force actuator
142‧‧‧向下力感測器 142‧‧‧down force sensor
144‧‧‧掃略致動器 144‧‧‧Sweep actuator
146‧‧‧感測器 146‧‧‧ sensor
148‧‧‧感測器 148‧‧‧ sensor
150‧‧‧感測器 150‧‧‧ sensor
152‧‧‧控制器 152‧‧‧ Controller
154‧‧‧中央處理單元(CPU) 154‧‧‧Central Processing Unit (CPU)
156‧‧‧記憶體 156‧‧‧ memory
158‧‧‧支援電路(I/O) 158‧‧‧Support Circuit (I/O)
190‧‧‧臂體 190‧‧‧Body
202‧‧‧拋光流體 202‧‧‧ polishing fluid
300‧‧‧方法 300‧‧‧ method
為使本發明之上述特徵可以被詳細了解，本發明之更特定描述(簡要說明於上文)係可參照具體實施例而得知，該等具體實施例係說明於如附圖式中。 The detailed description of the present invention, which is set forth in the claims,
第1圖為示例CMP系統之截面圖，該CMP系統係可用於實施本發明之具體實施例。 1 is a cross-sectional view of an exemplary CMP system that can be used to practice specific embodiments of the present invention.
第2圖為第1圖之CMP系統的上視圖。 Figure 2 is a top view of the CMP system of Figure 1.
第3圖為墊片調整方法之一具體實施例的流程圖。 Figure 3 is a flow chart of one embodiment of a shim adjustment method.
為助於了解，盡可能使用了相同的元件符號來代表圖式中相同的元件。應知一具體實施例中的元件與特徵係可有利地併入其他具體實施例中，無需進一步之說明。 To assist in understanding, the same component symbols are used whenever possible to represent the same components in the drawings. It will be appreciated that elements and features of a particular embodiment may be beneficially incorporated in other specific embodiments without further recitation.
然而，應注意如附圖式僅說明了本發明之示例具體實施例，因此不應被視為對本發明範疇之限制，因為本發明亦允許其他的等效具體實施例。 It is to be understood, however, that the appended claims
100．．．拋光器100. . . Polisher
102．．．平台102. . . platform
104．．．拋光墊片104. . . Polishing gasket
106．．．拋光頭106. . . Polishing head
108．．．調整頭108. . . Adjustment head
112．．．馬達112. . . motor
114．．．軸桿114. . . Shaft
118．．．基板118. . . Substrate
120．．．馬達120. . . motor
122．．．調整器裝置122. . . Regulator device
124．．．調整盤124. . . Adjustment disk
126．．．軸桿126. . . Shaft
128．．．臂體128. . . Arm body
130．．．機械基座130. . . Mechanical base
132．．．軸承132. . . Bearing
134．．．馬達134. . . motor
136．．．外殼136. . . shell
138．．．感測器138. . . Sensor
140．．．向下力致動器140. . . Down force actuator
142．．．向下力感測器142. . . Down force sensor
144．．．掃略致動器144. . . Sweep actuator
146．．．感測器146. . . Sensor
148．．．感測器148. . . Sensor
150．．．感測器150. . . Sensor
152．．．控制器152. . . Controller
154．．．中央處理單元154. . . Central processing unit
156．．．記憶體156. . . Memory
158．．．支援電路(I/O)158. . . Support circuit (I/O)
Claims (11)
Applications Claiming Priority (1)
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| US33030010P | 2010-04-30 | 2010-04-30 |
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| US (1) | US20130122783A1 (en) |
| JP (1) | JP2013526057A (en) |
| KR (1) | KR20130059312A (en) |
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Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9696710B2 (en) * | 2009-11-05 | 2017-07-04 | Vibration Technologies, Llc | Method and system for measuring the dynamic response of a structure during a machining process |
| JP5511600B2 (en) * | 2010-09-09 | 2014-06-04 | 株式会社荏原製作所 | Polishing equipment |
| US8758085B2 (en) * | 2010-10-21 | 2014-06-24 | Applied Materials, Inc. | Method for compensation of variability in chemical mechanical polishing consumables |
| JP5927083B2 (en) * | 2012-08-28 | 2016-05-25 | 株式会社荏原製作所 | Dressing process monitoring method and polishing apparatus |
| CN103531509A (en) * | 2013-09-26 | 2014-01-22 | 苏州经贸职业技术学院 | Method for precisely positioning circle center on workbench |
| US9312142B2 (en) * | 2014-06-10 | 2016-04-12 | Globalfoundries Inc. | Chemical mechanical polishing method and apparatus |
| GB201417861D0 (en) * | 2014-10-09 | 2014-11-26 | Rolls Royce Plc | Abrasive processing method |
| JP6307428B2 (en) * | 2014-12-26 | 2018-04-04 | 株式会社荏原製作所 | Polishing apparatus and control method thereof |
| JP6444785B2 (en) * | 2015-03-19 | 2018-12-26 | 株式会社荏原製作所 | Polishing apparatus, control method therefor, and dressing condition output method |
| KR101695805B1 (en) * | 2016-08-18 | 2017-01-12 | 정우엔텍 주식회사 | CMP equipment conditioner structure |
| JP6357260B2 (en) * | 2016-09-30 | 2018-07-11 | 株式会社荏原製作所 | Polishing apparatus and polishing method |
| US10675732B2 (en) * | 2017-04-18 | 2020-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for CMP pad conditioning |
| WO2019099541A1 (en) * | 2017-11-16 | 2019-05-23 | Applied Materials, Inc. | Predictive filter for polishing pad wear rate monitoring |
| US10857651B2 (en) * | 2017-11-20 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus of chemical mechanical polishing and operating method thereof |
| US11292101B2 (en) * | 2017-11-22 | 2022-04-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and method |
| US11389928B2 (en) * | 2017-11-30 | 2022-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for conditioning polishing pad |
| KR20200043214A (en) * | 2018-10-17 | 2020-04-27 | 주식회사 케이씨텍 | Conditioner of chemical mechanical polishing apparatus |
| US11794305B2 (en) | 2020-09-28 | 2023-10-24 | Applied Materials, Inc. | Platen surface modification and high-performance pad conditioning to improve CMP performance |
| CN112476227A (en) * | 2020-11-27 | 2021-03-12 | 华虹半导体(无锡)有限公司 | Chemical mechanical polishing device |
| CN117260407B (en) * | 2023-11-20 | 2024-03-12 | 铭扬半导体科技(合肥)有限公司 | Detection method of polishing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200819243A (en) * | 2006-06-28 | 2008-05-01 | 3M Innovative Properties Co | Abrasive articles, CMP monitoring system and method |
| US20090318060A1 (en) * | 2008-06-23 | 2009-12-24 | Applied Materials, Inc. | Closed-loop control for effective pad conditioning |
| US20100035525A1 (en) * | 2008-08-07 | 2010-02-11 | Sameer Deshpande | In-situ performance prediction of pad conditioning disk by closed loop torque monitoring |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3031345B2 (en) * | 1998-08-18 | 2000-04-10 | 日本電気株式会社 | Polishing apparatus and polishing method |
| JP4030247B2 (en) * | 1999-05-17 | 2008-01-09 | 株式会社荏原製作所 | Dressing device and polishing device |
| US6306008B1 (en) * | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
| US20040182721A1 (en) * | 2003-03-18 | 2004-09-23 | Applied Materials, Inc. | Process control in electro-chemical mechanical polishing |
| US6517414B1 (en) * | 2000-03-10 | 2003-02-11 | Appied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
| US6896583B2 (en) * | 2001-02-06 | 2005-05-24 | Agere Systems, Inc. | Method and apparatus for conditioning a polishing pad |
| US7101799B2 (en) * | 2001-06-19 | 2006-09-05 | Applied Materials, Inc. | Feedforward and feedback control for conditioning of chemical mechanical polishing pad |
| US7011566B2 (en) * | 2002-08-26 | 2006-03-14 | Micron Technology, Inc. | Methods and systems for conditioning planarizing pads used in planarizing substrates |
| US20050061674A1 (en) * | 2002-09-16 | 2005-03-24 | Yan Wang | Endpoint compensation in electroprocessing |
| JP2004186493A (en) * | 2002-12-04 | 2004-07-02 | Matsushita Electric Ind Co Ltd | Method and arrangement for chemomechanical polishing |
| DE10324429B4 (en) * | 2003-05-28 | 2010-08-19 | Advanced Micro Devices, Inc., Sunnyvale | Method for operating a chemical-mechanical polishing system by means of a sensor signal of a polishing pad conditioner |
| US7052371B2 (en) * | 2003-05-29 | 2006-05-30 | Tbw Industries Inc. | Vacuum-assisted pad conditioning system and method utilizing an apertured conditioning disk |
| US6931330B1 (en) * | 2003-06-30 | 2005-08-16 | Lam Research Corporation | Methods for monitoring and controlling chemical mechanical planarization |
| DE10345381B4 (en) * | 2003-09-30 | 2013-04-11 | Advanced Micro Devices, Inc. | A method and system for controlling chemical mechanical polishing using a sensor signal from a pad conditioner |
| US7040958B2 (en) * | 2004-05-21 | 2006-05-09 | Mosel Vitelic, Inc. | Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer |
| US6953382B1 (en) * | 2004-06-24 | 2005-10-11 | Novellus Systems, Inc. | Methods and apparatuses for conditioning polishing surfaces utilized during CMP processing |
| US20070212983A1 (en) * | 2006-03-13 | 2007-09-13 | Applied Materials, Inc. | Apparatus and methods for conditioning a polishing pad |
| US8065031B2 (en) * | 2006-09-14 | 2011-11-22 | Tokyo Seimitsu Co., Ltd | Polishing end point detection method utilizing torque change and device thereof |
| DE102007015503B4 (en) * | 2007-03-30 | 2013-03-21 | Globalfoundries Inc. | Method and system for controlling chemical mechanical polishing by taking into account zone specific substrate data |
| US8221193B2 (en) * | 2008-08-07 | 2012-07-17 | Applied Materials, Inc. | Closed loop control of pad profile based on metrology feedback |
| US20130217306A1 (en) * | 2012-02-16 | 2013-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMP Groove Depth and Conditioning Disk Monitoring |
-
2011
- 2011-04-13 US US13/129,351 patent/US20130122783A1/en not_active Abandoned
- 2011-04-13 JP JP2013507995A patent/JP2013526057A/en active Pending
- 2011-04-13 KR KR1020127021075A patent/KR20130059312A/en not_active Application Discontinuation
- 2011-04-13 WO PCT/US2011/032319 patent/WO2011139501A2/en active Application Filing
- 2011-04-13 CN CN2011800073435A patent/CN102782814A/en active Pending
- 2011-04-27 TW TW100114706A patent/TWI568534B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200819243A (en) * | 2006-06-28 | 2008-05-01 | 3M Innovative Properties Co | Abrasive articles, CMP monitoring system and method |
| US20090318060A1 (en) * | 2008-06-23 | 2009-12-24 | Applied Materials, Inc. | Closed-loop control for effective pad conditioning |
| US20100035525A1 (en) * | 2008-08-07 | 2010-02-11 | Sameer Deshpande | In-situ performance prediction of pad conditioning disk by closed loop torque monitoring |
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| TW201206629A (en) | 2012-02-16 |
| CN102782814A (en) | 2012-11-14 |
| WO2011139501A2 (en) | 2011-11-10 |
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| WO2011139501A3 (en) | 2012-02-23 |
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| KR20130059312A (en) | 2013-06-05 |
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