TWI562378B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TWI562378B TWI562378B TW104120351A TW104120351A TWI562378B TW I562378 B TWI562378 B TW I562378B TW 104120351 A TW104120351 A TW 104120351A TW 104120351 A TW104120351 A TW 104120351A TW I562378 B TWI562378 B TW I562378B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104120351A TWI562378B (en) | 2015-06-24 | 2015-06-24 | Semiconductor device |
CN201510454135.XA CN106298873A (en) | 2015-06-24 | 2015-07-29 | Semiconductor device with a plurality of semiconductor chips |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104120351A TWI562378B (en) | 2015-06-24 | 2015-06-24 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI562378B true TWI562378B (en) | 2016-12-11 |
TW201701476A TW201701476A (en) | 2017-01-01 |
Family
ID=57651115
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104120351A TWI562378B (en) | 2015-06-24 | 2015-06-24 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN106298873A (en) |
TW (1) | TWI562378B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106952944B (en) * | 2017-01-16 | 2019-09-10 | 中国电子科技集团公司第五十五研究所 | A kind of three-dimensional electric field modulation Low dark curient terminal protection structure |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110204442A1 (en) * | 2010-02-19 | 2011-08-25 | Alpha And Omega Semiconductor Incorporated | Corner layout for superjunction device |
US20120112306A1 (en) * | 2010-11-09 | 2012-05-10 | Fuji Electric Co., Ltd. | Semiconductor device with superjunction structure |
US20120161274A1 (en) * | 2005-06-29 | 2012-06-28 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
TW201244058A (en) * | 2011-04-18 | 2012-11-01 | Episil Technologies Inc | Power LDMOS device and high voltage device |
US20130037852A1 (en) * | 2011-08-12 | 2013-02-14 | Renesas Electronics Corporation | Power mosfet, an igbt, and a power diode |
US20130181328A1 (en) * | 2012-01-18 | 2013-07-18 | Fuji Electric Co., Ltd. | Semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1397574B1 (en) * | 2008-12-29 | 2013-01-16 | St Microelectronics Rousset | MULTI-DRAIN TYPE POWER SEMICONDUCTOR DEVICE AND RELATIVE ON-BOARD TERMINATION STRUCTURE |
-
2015
- 2015-06-24 TW TW104120351A patent/TWI562378B/en active
- 2015-07-29 CN CN201510454135.XA patent/CN106298873A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120161274A1 (en) * | 2005-06-29 | 2012-06-28 | Fairchild Korea Semiconductor Ltd. | Superjunction semiconductor device |
US20110204442A1 (en) * | 2010-02-19 | 2011-08-25 | Alpha And Omega Semiconductor Incorporated | Corner layout for superjunction device |
US20120112306A1 (en) * | 2010-11-09 | 2012-05-10 | Fuji Electric Co., Ltd. | Semiconductor device with superjunction structure |
TW201244058A (en) * | 2011-04-18 | 2012-11-01 | Episil Technologies Inc | Power LDMOS device and high voltage device |
US20130037852A1 (en) * | 2011-08-12 | 2013-02-14 | Renesas Electronics Corporation | Power mosfet, an igbt, and a power diode |
US20130181328A1 (en) * | 2012-01-18 | 2013-07-18 | Fuji Electric Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN106298873A (en) | 2017-01-04 |
TW201701476A (en) | 2017-01-01 |
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